Power semiconductor device

Description

FIG. 1 is a front, right side, bottom perspective view of a power semiconductor device showing our new design;

FIG. 2 is a rear, left side, top perspective view thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top plan view thereof; and,

FIG. 8 is a bottom plan view thereof.

The broken lines shown represent unclaimed subject matter of a power semiconductor device and form no part of the claimed design.

Claims

CLAIM The ornamental design for a power semiconductor device, as shown and described.

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Inventors:	Hasegawa; Maki (Tokyo, JP), Kato; Masahiro (Tokyo, JP), Nakagawa; Shinya (Tokyo, JP), Kawafuji; Hisashi (Tokyo, JP), Iwagami; Toru (Tokyo, JP)
Applicant:	Name City State Country Type MITSUBISHI ELECTRIC CORPORATION Tokyo N/A JP
Assignee:	Mitsubishi Electric Corporation (Tokyo, JP)
Appl. No.:	D/568,598
Filed:	June 20, 2016

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Related U.S. Patent Documents

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	Application Number	Filing Date	Patent Number	Issue Date
	29503649	Sep 29, 2014

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Foreign Application Priority Data

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Apr 2, 2014 [JP]			2014-007263
Apr 2, 2014 [JP]			2014-007264
Apr 2, 2014 [JP]			2014-007265
Apr 2, 2014 [JP]			2014-007266

Current U.S. Class:	D13/182
Current International Class:	1303
Field of Search:	;D13/182

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References Cited [Referenced By]

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U.S. Patent Documents

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Primary Examiner: Oswecki; Elizabeth J
Attorney, Agent or Firm: Studebaker & Brackett PC