Semiconductor device

Kawafuji , et al. March 28, 2

Patent Grant D421969

U.S. patent number D421,969 [Application Number D/100,732] was granted by the patent office on 2000-03-28 for semiconductor device. This patent grant is currently assigned to Mitsubishi Denki Kabushiki Kaisha. Invention is credited to Mitsutaka Iwasaki, Hisashi Kawafuji, Gourab Majumdar, Toshiaki Shinohara.


United States Patent D421,969
Kawafuji ,   et al. March 28, 2000

Semiconductor device

Claims

The ornamental design for a semiconductor device, as shown and described.
Inventors: Kawafuji; Hisashi (Tokyo, JP), Iwasaki; Mitsutaka (Tokyo, JP), Majumdar; Gourab (Tokyo, JP), Shinohara; Toshiaki (Tokyo, JP)
Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP)
Appl. No.: D/100,732
Filed: February 17, 1999

Foreign Application Priority Data

Sep 29, 1998 [JP] 10-27739
Current U.S. Class: D13/182
Current International Class: 1303
Field of Search: ;D13/182 ;174/52.4,525 ;257/690 ;361/752,798,820

References Cited [Referenced By]

U.S. Patent Documents
D317592 June 1991 Yoshizawa
D359028 June 1995 Siegel et al.
D360619 July 1995 Terasawa et al.
D394244 May 1998 Majumdar et al.
D396213 July 1998 Enomoto et al.
D397092 August 1998 Sano et al.
D401912 December 1998 Majumdar et al.
5089929 February 1992 Hilland
Primary Examiner: Vinson; Brian N.
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.

Description



FIG. 1 is a front elevational view of a semiconductor device, showing our new design;

FIG. 2 is a rear elevational view thereof;

FIG. 3 is a top plan view thereof;

FIG. 4 is a bottom plan view thereof;

FIG. 5 is a left side elevational view thereof;

FIG. 6 is a right side elevational view thereof;

FIG. 7 is an enlarged cross-sectional view thereof, taken along line 7-7 in FIG. 1;

FIG. 8 is an enlarged cross-sectional view thereof, taken along line 8-8 in FIG. 1; and,

FIG. 9 is a front, right side and bottom perspective view thereof.

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