U.S. patent application number 14/594296 was filed with the patent office on 2015-09-03 for edge hump reduction faceplate by plasma modulation.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Ganesh BALASUBRAMANIAN, Ziqing DUAN, Sungwon HA, Lei JING, Bok Hoen KIM, Ngoc LE, Kwangduk Douglas LEE, Ndanka MUKUTI, Juan Carlos ROCHA-ALVAREZ, Martin Jay SEAMONS, Zheng John YE.
Application Number | 20150247237 14/594296 |
Document ID | / |
Family ID | 54006490 |
Filed Date | 2015-09-03 |
United States Patent
Application |
20150247237 |
Kind Code |
A1 |
HA; Sungwon ; et
al. |
September 3, 2015 |
EDGE HUMP REDUCTION FACEPLATE BY PLASMA MODULATION
Abstract
Embodiments described herein relate to a faceplate for improving
film uniformity. A semiconductor processing apparatus includes a
pedestal, an edge ring and a faceplate having distinct regions with
differing hole densities. The faceplate has an inner region and an
outer region which surrounds the inner region. The inner region has
a greater density of holes formed therethrough when compared to the
outer region. The inner region is sized to correspond with a
substrate being processed while the outer region is sized to
correspond with the edge ring.
Inventors: |
HA; Sungwon; (Palo Alto,
CA) ; LEE; Kwangduk Douglas; (Redwood City, CA)
; BALASUBRAMANIAN; Ganesh; (Sunnyvale, CA) ;
ROCHA-ALVAREZ; Juan Carlos; (San Carlos, CA) ;
SEAMONS; Martin Jay; (San Jose, CA) ; DUAN;
Ziqing; (Sunnyvale, CA) ; YE; Zheng John;
(Santa Clara, CA) ; KIM; Bok Hoen; (San Jose,
CA) ; JING; Lei; (Santa Clara, CA) ; LE;
Ngoc; (Santa Clara, CA) ; MUKUTI; Ndanka;
(Santa Clara, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Family ID: |
54006490 |
Appl. No.: |
14/594296 |
Filed: |
January 12, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61947077 |
Mar 3, 2014 |
|
|
|
Current U.S.
Class: |
118/715 |
Current CPC
Class: |
C23C 16/4401 20130101;
C23C 16/45565 20130101; C23C 16/4585 20130101; C23C 16/5096
20130101; H01J 37/32091 20130101; H01J 37/32449 20130101 |
International
Class: |
C23C 16/44 20060101
C23C016/44; C23C 16/455 20060101 C23C016/455; C23C 16/50 20060101
C23C016/50 |
Claims
1. An apparatus for processing a substrate, comprising: a chamber
body defining a processing volume; a pedestal disposed within the
processing volume; an edge ring disposed on the pedestal; and a
faceplate coupled to the chamber body opposite the pedestal in the
processing volume, the faceplate comprising: a first region having
a first density of holes formed therethrough; and a second region
having a second density of holes formed therethrough surrounding
the first region, wherein the second density of holes is at least
20% less than the first density of holes.
2. The apparatus of claim 1, wherein the first region is circle
shaped and sized to correspond to a substrate being processed.
3. The apparatus of claim 2, wherein the second region is ring
shaped and sized to correspond to the edge ring.
4. The apparatus of claim 1, wherein the first density of holes is
between about 20 holes/in.sup.2 and about 100 holes/in.sup.2.
5. The apparatus of claim 4, wherein the second density of holes is
between about 5 holes/in.sup.2 and about 95 holes/in.sup.2.
6. The apparatus of claim 1, wherein the second density of holes is
between about 60% and about 80% the density of the first density of
holes.
7. The apparatus of claim 6, wherein the holes are positioned on
concentric rings.
8. The apparatus of claim 1, wherein a diameter of the first region
of the faceplate corresponds to an inner diameter of the edge
ring.
9. The apparatus of claim 8, wherein an inner diameter of the
second region corresponds to the inner diameter of the edge
ring.
10. The apparatus of claim 9, wherein an outer diameter of the
second region corresponds to an outer diameter of the edge
ring.
11. The apparatus of claim 1, wherein the faceplate comprises an
aluminum material.
12. The apparatus of claim 1, wherein the edge ring comprises a
dielectric material.
13. The apparatus of claim 12, wherein the edge ring comprises
aluminum nitride.
14. The apparatus of claim 1, wherein a distance between the
pedestal in a processing position and the faceplate is between
about 250 mil and about 350 mil.
15. The apparatus of claim 1, wherein a distance between the edge
ring in a processing position and the faceplate is between about
190 mil and about 230 mil.
16. An apparatus for processing a substrate, comprising: a chamber
body defining a processing volume; a pedestal disposed within the
processing volume; an aluminum nitride edge ring disposed on the
pedestal; and a aluminum faceplate coupled to the chamber body
opposite the pedestal in the processing volume, the faceplate
comprising: a circle shaped region of the body having a first
density of holes formed therethrough, wherein the first density of
holes is about 50 holes/in.sup.2; and a ring shaped region having a
second density of holes formed therethrough surrounding the first
region, wherein the second density of holes is between about 30
holes/in.sup.2.
17. The apparatus of claim 16, wherein an inner diameter of the
ring shaped region corresponds to the inner diameter of the edge
ring and an outer diameter of the ring shaped region corresponds to
an outer diameter of the edge ring.
18. A faceplate apparatus, comprising: a circular shaped body; a
circle shaped region of the circular shaped body having a first
density of holes formed therethrough, wherein the first density of
holes is between about 20 holes/in.sup.2 and about 100
holes/in.sup.2; and a ring shaped region of the circular shaped
body having a second density of holes formed therethrough
surrounding the first region, wherein the second density of holes
is between about 60% and about 80% of the first density of
holes.
19. The apparatus of claim 18, wherein the circular shaped body is
made of aluminum.
20. The apparatus of claim 18, wherein the holes are positioned on
concentric rings.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. provisional patent
application No. 61/947,077, filed Mar. 3, 2014, the entirety of
which is herein incorporated by reference.
BACKGROUND
[0002] 1. Field
[0003] Embodiments described herein generally relate to particle
reduction and improvements in film uniformity in semiconductor
processes. More specifically, embodiments described herein relate
to edge hump reduction via a plasma modulation faceplate.
[0004] 2. Description of the Related Art
[0005] Reducing the generation of undesirable particles during
semiconductor processing is important in forming defect-free
microelectronic devices. Various processes generate particles and
different apparatus and methods have been employed to reduce or
eliminate particle generation. For example, deposition of a
patterning film and the subsequent removal thereof may generate
particles at a greater incidence near the edge of the substrate due
to bevel edge defects.
[0006] A method of reducing particle generation in this example is
to utilize an edge ring which protects the edge of the substrate
during deposition/etching processes. The edge ring is generally
effective in reducing particle generation due to the bevel edge
defects; however, subsequent film deposition processes suffer from
thickness non-uniformities due to the alteration of the plasma
field near the edge of the substrate. Thus, in certain processes,
the presence of the edge ring adversely affects the uniformity of
films by altering the thickness of the films across the surface of
the substrate.
[0007] Therefore, what is needed in the art is an apparatus which
reduces particle generation during semiconductor processing while
maintaining or improving film thickness uniformity across the
surface of the substrate.
SUMMARY
[0008] In one embodiment, an apparatus for processing a substrate
is provided. The apparatus includes a chamber body defining a
processing volume. A pedestal may be disposed within the processing
volume and an edge ring may be disposed on the pedestal. A
faceplate may be coupled to the chamber body opposite the pedestal
in the chamber volume. The faceplate comprises a first region
having a first density of holes formed therethrough and a second
region having a second density of holes formed therethrough. The
second region may surround the first region and the second density
of holes may be less than the first density of holes.
[0009] In another embodiment, an apparatus for processing a
substrate is provided. The apparatus includes a chamber body
defining a processing volume and pedestal may be disposed within
the processing volume. An aluminum nitride edge ring may be
disposed on the pedestal and an aluminum faceplate may be coupled
to the chamber body opposite the pedestal in the processing volume.
The faceplate comprises a circle shaped region having a first
density of holes formed there through. The first density of holes
may be about 50 holes/in.sup.2. A ring shapes region may have a
second density of holed formed therethrough surrounding the first
region and the second density of holes may be about 30
holes/in.sup.2.
[0010] In yet another embodiment, a faceplate apparatus is
provided. The faceplate apparatus includes a circular shaped
aluminum body. A circle shaped region of the body may have a first
density of holed for therethrough. The first density of holes may
be between about 20 holes/in.sup.2 and about 100 holes/in.sup.2. A
ring shaped region of the body may have a second density of holes
formed therethrough surrounding the first region. The second
density of holes may be between about 60% and about 80% of the
first density of holes.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] So that the manner in which the above recited features of
the present disclosure can be understood in detail, a more
particular description of the disclosure, briefly summarized above,
may be had by reference to embodiments, some of which are
illustrated in the appended drawings. It is to be noted, however,
that the appended drawings illustrate only typical embodiments of
this disclosure and are therefore not to be considered limiting of
its scope, for the disclosure may admit to other equally effective
embodiments.
[0012] FIG. 1 illustrates a schematic, cross-sectional view of a
processing chamber according to one embodiment described
herein.
[0013] FIG. 2 illustrates a bottom view of a faceplate according to
one embodiment described herein.
[0014] FIG. 3 illustrates a partial, cross sectional view of the
faceplate of FIG. 2 according to one embodiment described
herein.
[0015] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
and features of one embodiment may be beneficially incorporated in
other embodiments without further recitation.
DETAILED DESCRIPTION
[0016] Embodiments described herein relate to a faceplate for
improving film uniformity. A semiconductor processing apparatus
includes a pedestal, an edge ring and a faceplate having distinct
regions with differing hole densities. The faceplate has an inner
region and an outer region which surrounds the inner region. The
inner region has a greater density of holes formed therethrough
when compared to the outer region. The inner region is sized to
correspond with a substrate being processed while the outer region
is sized to correspond with the edge ring.
[0017] FIG. 1 illustrates a schematic, cross-sectional view of a
processing chamber 100. The chamber 100 includes a chamber body 102
which defines a processing volume 118, a pedestal 104, an edge ring
106 and a faceplate 110. The chamber body 102 is made from a
metallic material, such as stainless steel or aluminum. A power
source 114 and a gas source 116 are coupled to the chamber body
102. The power source 114 may be an RF power source configured to
form a capacitively coupled plasma within in the processing volume
118 of the chamber 100. The gas source 116 delivers processing and
other gases to the chamber 110. The process gases are distributed
to the processing volume 118 through the faceplate 110 or
showerhead.
[0018] One example of a suitable processing chamber is the
PRODUCER.RTM. system, available from Applied Materials, Inc., Santa
Clara, Calif.. It is contemplated that other suitably configured
systems from other manufacturers may advantageously employ the
embodiments, or various aspects thereof, described herein.
[0019] The faceplate 110 is disposed within the processing volume
118 and coupled to the chamber body 102. A ledge 126, or other
similar structure, of the faceplate 110 is configured to mate with
a coupling apparatus 112. The coupling apparatus 112 spaces the
faceplate 110 from the chamber body 102 and positions the faceplate
110 within the processing volume 118. The faceplate 110 and the
coupling apparatus 112 are fastened together by a bolt or screw, or
other similar fastening apparatus.
[0020] The pedestal 104 is moveably disposed within the processing
volume 118 and is configured to support a substrate 108 and the
edge ring 106 during processing. The pedestal 104 may also
incorporate a heater to heat the substrate 108. The substrate 108
is disposed on the pedestal 104 and an edge region of the substrate
106 is covered by a portion the edge ring 106 which extends over
the edge of the substrate 108 around the entire circumference of
the substrate 108. An example of a substrate 108 may be a 200 mm
substrate, a 300 mm substrate, or a 450 mm substrate. The edge ring
106 is sized to accommodate the size of the substrate 108 being
processed.
[0021] The edge ring 106 is annular in shape and a portion of the
edge ring 106 covers the edge of the substrate 108. In one example,
an inner diameter 130 of the edge ring 106 is between about 190 mm
and about 450 mm, such as between about 290 mm and about 300 mm. An
outer diameter 132 of the edge ring 106 is between about 250 mm and
about 600 mm, such as about 370 mm. A thickness 134 of the edge
ring 106 is between about 70 mil and about 110 mil, such as between
about 80 mil and about 100 mil, such as about 90 mil. The edge ring
106 is made of a dielectric material such as an oxide or nitride,
for example, aluminum nitride.
[0022] During processing, a distance 136 between the edge ring 134
and the faceplate 110 is between about 140 mil and about 1030 mil,
such as about 210 mil. A distance 138 between the pedestal 104
supporting surface and the faceplate 110 is between about 250 mil
and about 1100 mil, such as about 300 mil. Process spacing is one
of many factors which affect the uniformity of films formed on the
substrate 108. The presence of the edge ring 106 increases the
electrical field near the edge of the substrate 108 which results
in a greater ion flux. The increased ion flux near the edge of the
substrate 108 and the edge ring 106 results in an increased
deposition rate during processing which results in a thicker film
near the edge of the substrate 108.
[0023] The faceplate 110 has an inner region 122 and an outer
region 124 with difference hole 120 densities to accommodate for
the plasma modulation by the presence of the edge ring 106 in the
chamber 100. The holes 120 extend through the faceplate 110 and
deliver gas from the gas source 116 to the processing volume 118.
In operation, the faceplate 110 is capacitively coupled to the
power source 114 and RF power causes the gas to form a plasma in
the processing region 118. In another embodiment, a remote plasma
source may be utilized to provide a plasma to the processing region
118.
[0024] The inner region 122 has a first density of holes 120 formed
therethrough and the outer region 124 has a second density of holes
120 formed therethrough. The second density of the holes 120 in the
outer region 124 is at least 20% less than the first density of
holes 120 in the inner region 122. For example, the first density
of holes 120 in the inner region 122 is between about 20
holes/in.sup.2 and about 100 holes/in.sup.2, such as about 50
holes/in.sup.2 and the second density of holes in the outer region
124 is between about 5 holes/in.sup.2 and about 95 holes/in.sup.2,
such as about 30 holes/in.sup.2. In one embodiment, the second
density of holes 120 is between about 60% and about 80%, such as
about 70%, of the first density of holes 120 in the inner
region.
[0025] The inner region 122 of the faceplate 110 is aligned above
the substrate 108 and the outer region 124 of the faceplate 110 is
aligned above the edge ring 106. The second density of holes 120 of
the outer region 124 reduces the amount of gas provided over the
edge ring 106 near the edge of the substrate 108. As a result, the
plasma modulation effects of the edge ring 106 (i.e. increased
electrical field and ion flux) are reduced or eliminated.
[0026] In one example, the uniformity profile of a deposited film
was examined utilizing a faceplate having a constant hole density
across the entire faceplate compared to the uniformity profile
provided from the faceplate 110 having varying hole densities
across the faceplate 110. The constant hole density faceplate
deposited a film with a thickness uniformity having a variation of
about 7.59%. The faceplate 110 with the inner region 122 having a
greater hole 120 density compared to the outer region 124 provided
a film thickness uniformity with a variation of 1.54%. Thus, the
faceplate 110 increased the uniformity of the film by modulating
the plasma profile near the edge of the substrate 108. As such, the
negative effects of the edge ring 106 were eliminated or reduced by
the hole 120 density profile of the faceplate 110.
[0027] FIG. 2 is a bottom view of the faceplate 110. The inner
region 122 is circular in shape and has a greater density of holes
120 when compared to the hole 120 density of the outer region 124.
A diameter 202 of the inner region 122 corresponds to the inner
diameter 130 of the edge ring 106. For example, the diameter 202 of
the inner region 122 is between about 250 mm and about 350 mm, such
as between about 290 and about 300 mm. The outer region 124 is
annular, or ring-like, in shape and surrounds the inner region 122.
An outer diameter 204 of the outer region 124 corresponds to the
outer diameter 132 of the edge ring 106. For example, the outer
diameter 204 of the outer region 124 is between about 200 mm and
about 450 mm, such as about 300 mm.
[0028] The inner region 122 and outer region 124 of the faceplate
110 are sized to occupy a similar area defined by the substrate 108
and edge ring 106, respectively. Thus, the inner region 122 is
sized similarly to the substrate 108 and the outer region 124 is
sized similarly to the edge ring 106.
[0029] The spacing of the holes 120 may be changed by varying
spacing of the holes 120 along circular lines in the outer region
124 of the faceplate 110. For example, the holes 120 in the inner
region 122 are more closely spaced from one another when compared
to the spacing of the holes 120 in the outer region 124. Thus, the
density of holes 120 in the outer region 124 is less than the
density of holes 120 in the inner region. In one embodiment, the
holes 120 are positioned on concentric rings.
[0030] FIG. 3 is a partial, cross-sectional view of the faceplate
110 of FIG. 2. The inner region 122 has the first hole 120 density
which is greater than the hole 120 density of the outer region 124.
The holes 120 in both the inner and outer regions 122, 124 have
similar dimensions. In this manner, the reduction in hole 120
density in the outer region 124 reduces the plasma density on the
outer region 124. However, it is contemplated that the dimensions
of the holes 120 may vary between the inner region 122 and the
outer region 124 in order to further define the plasma density on
the different regions 122, 124.
[0031] In sum, the processing chamber 100 includes the pedestal 104
upon which the substrate 108 and edge ring 106 are disposed. The
faceplate 110 is disposed within the processing volume 118 opposite
the pedestal 104. The faceplate 110 has the inner region 122 sized
similarly to the substrate 108 and the outer region 124 sized
similarly to the edge ring 106. The first hole 120 density of the
inner region 120 is greater than the hole 120 density of the outer
region 124. The varying hole 120 densities of the inner region 122
and outer region 124 enable plasma modulation near the edge ring
106 and substrate 108 edge which provides for improved film
thickness uniformity across the surface of the substrate 108.
[0032] While the foregoing is directed to embodiments of the
present disclosure, other and further embodiments of the disclosure
may be devised without departing from the basic scope thereof, and
the scope thereof is determined by the claims that follow.
* * * * *