U.S. patent number 9,268,236 [Application Number 12/814,242] was granted by the patent office on 2016-02-23 for lithographic apparatus and device manufacturing method having heat pipe with fluid to cool substrate and/or substrate holder.
This patent grant is currently assigned to ASML NETHERLANDS B.V.. The grantee listed for this patent is Herman Boom, Igor Petrus Maria Bouchoms, Johannes Henricus Wilhelmus Jacobs, Franciscus Johannes Joseph Janssen, Nicolaas Rudolf Kemper, Yucel Kok, Martinus Hendrikus Antonius Leenders, Erik Roelof Loopstra, Joost Jeroen Ottens, Nicolaas Ten Kate, Johannes Van Es, Martinus Cornelis Maria Verhagen. Invention is credited to Herman Boom, Igor Petrus Maria Bouchoms, Johannes Henricus Wilhelmus Jacobs, Franciscus Johannes Joseph Janssen, Nicolaas Rudolf Kemper, Yucel Kok, Martinus Hendrikus Antonius Leenders, Erik Roelof Loopstra, Joost Jeroen Ottens, Nicolaas Ten Kate, Johannes Van Es, Martinus Cornelis Maria Verhagen.
United States Patent |
9,268,236 |
Jacobs , et al. |
February 23, 2016 |
Lithographic apparatus and device manufacturing method having heat
pipe with fluid to cool substrate and/or substrate holder
Abstract
A lithographic apparatus configured to project a patterned
radiation beam onto a target portion of a substrate held on a
substrate holder in an indent on a substrate table, the apparatus
includes a liquid supply system configured to at least partly fill
a space between a projection system and the substrate with liquid;
a barrier structure configured to substantially contain the liquid
within the space; and a heat pipe supplied, in use, with a
temperature conditioned fluid and configured to thermally condition
the substrate and/or the substrate holder at locations where
localized cooling is likely to occur.
Inventors: |
Jacobs; Johannes Henricus
Wilhelmus (Eindhoven, NL), Bouchoms; Igor Petrus
Maria (Veldhoven, NL), Kemper; Nicolaas Rudolf
(Eindhoven, NL), Ten Kate; Nicolaas (Almkerk,
NL), Leenders; Martinus Hendrikus Antonius (Rhoon,
NL), Loopstra; Erik Roelof (Heeze, NL),
Ottens; Joost Jeroen (Veldhoven, NL), Verhagen;
Martinus Cornelis Maria (Valkenswaard, NL), Kok;
Yucel (Veldhoven, NL), Van Es; Johannes (Zwolle,
NL), Boom; Herman (Eindhoven, NL), Janssen;
Franciscus Johannes Joseph (Eindhoven, NL) |
Applicant: |
Name |
City |
State |
Country |
Type |
Jacobs; Johannes Henricus Wilhelmus
Bouchoms; Igor Petrus Maria
Kemper; Nicolaas Rudolf
Ten Kate; Nicolaas
Leenders; Martinus Hendrikus Antonius
Loopstra; Erik Roelof
Ottens; Joost Jeroen
Verhagen; Martinus Cornelis Maria
Kok; Yucel
Van Es; Johannes
Boom; Herman
Janssen; Franciscus Johannes Joseph |
Eindhoven
Veldhoven
Eindhoven
Almkerk
Rhoon
Heeze
Veldhoven
Valkenswaard
Veldhoven
Zwolle
Eindhoven
Eindhoven |
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A |
NL
NL
NL
NL
NL
NL
NL
NL
NL
NL
NL
NL |
|
|
Assignee: |
ASML NETHERLANDS B.V.
(Veldhoven, NL)
|
Family
ID: |
37027705 |
Appl.
No.: |
12/814,242 |
Filed: |
June 11, 2010 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20100245791 A1 |
Sep 30, 2010 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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11454129 |
Jun 16, 2006 |
7751027 |
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11319217 |
Dec 28, 2005 |
7652746 |
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60692234 |
Jun 21, 2005 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G03F
7/70716 (20130101); G03F 7/70875 (20130101); G03F
7/70341 (20130101) |
Current International
Class: |
G03F
7/20 (20060101) |
Field of
Search: |
;355/30,53 |
References Cited
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Primary Examiner: Liu; Chia-How Michael
Attorney, Agent or Firm: Pillsbury Winthrop Shaw Pittman
LLP
Parent Case Text
RELATED APPLICATIONS
The present application is a continuation of U.S. patent
application Ser. No. 11/454,129, filed on Jun. 16, 2006, now U.S.
Pat. No. 7,751,027, which is a continuation-in-part application of
U.S. patent application Ser. No. 11/319,217, filed Dec. 28, 2005,
now U.S. Pat. No. 7,652,746, which claims benefit of U.S.
Provisional Application No. 60/692,234, filed Jun. 21, 2005, the
entire contents of each application hereby incorporated by
reference.
Claims
What is claimed is:
1. A lithographic apparatus configured to project a patterned
radiation beam onto a target portion of a substrate held in an
indent on a substrate table, the apparatus comprising: a liquid
supply system configured to at least partly fill a space between a
projection system and the substrate with liquid; a barrier
structure configured to substantially contain the liquid within the
space; and a heat pipe having, in use, therein vapor and configured
to enable phase change of the vapor to bring about thermal
conditioning of the substrate and/or the substrate table at
locations where a thermal load is likely to occur.
2. The lithographic apparatus according to claim 1, wherein the
heat pipe comprises a plurality of channels, which are as close to
a substrate table surface facing the substrate as possible.
3. The lithographic apparatus according to claim 1, further
comprising hollow dimples in the surface of the substrate table
facing the substrate.
4. The lithographic apparatus according to claim 3, wherein the
hollow dimples comprise passages between the heat pipe and the
substrate such that they allow vapor, gas or both to pass from the
heat pipe to the bottom surface of the substrate.
5. The lithographic apparatus according to claim 1, wherein the
heat pipe is provided, in use, with a temperature conditioned
fluid.
6. The lithographic apparatus according claim 5, wherein the fluid
is a gas comprising at least one selected from: acetone, ether
and/or alcohol.
7. The lithographic apparatus according to claim 5, wherein the
fluid is a two-phase mixture comprising a second liquid and the
vapor.
8. The lithographic apparatus according to claim 7, wherein the
second liquid is water and the vapor is water vapor.
9. The lithographic apparatus according to claim 7, further
comprising a heater to heat the second liquid or the fluid.
10. The lithographic apparatus according to claim 9, wherein the
heater is positioned in the second liquid or the fluid.
11. The lithographic apparatus according to claim 9, further
comprising a temperature and/or pressure sensor to provide an input
parameter for the heater.
12. The lithographic apparatus according to claim 7, wherein the
heater is attached to the substrate table.
13. The lithographic apparatus according to claim 1, wherein the
heat pipe is sealed from the atmosphere.
14. The lithographic apparatus according to claim 1, further
comprising a gas knife to supply a stream of compressed humidified
or heated gas to the substrate surface between projections by the
projection system.
15. The lithographic apparatus according to claim 14, further
comprising a gas knife extraction system to remove the gas stream
from the surface of the substrate and a microsieve suspended above
the substrate to remove the liquid from the surface of the
substrate separately from the gas.
16. The lithographic apparatus according to claim 1, comprising a
sponge-like material configured to remove condensed vapor from
condensation areas in the substrate table.
17. The lithographic apparatus according to claim 1, wherein the
thermal load is due to evaporation of the liquid.
18. The lithographic apparatus according to claim 1, wherein the
phase change causes condensation on the substrate.
19. A device manufacturing method, comprising: supplying a liquid
to a space between a projection system of a lithographic apparatus
and a substrate supported by a substrate table, the liquid at least
partially contained by a liquid confinement structure; and flowing
vapor in a heat pipe arranged in the substrate table and causing
phase change of the vapor to enable thermal conditioning of the
substrate and/or the substrate table at locations where a thermal
load is likely to occur.
20. The method according to claim 19, further comprising heating a
portion of the substrate according to (i) the position, (ii)
velocity, (iii) acceleration, (iv) path, or (v) any combination of
(i)-(iv) of the substrate table relative to the liquid confinement
structure, the local substrate temperature or the local substrate
table temperature.
21. The method according to claim 19, wherein the thermal load is
due to evaporation of the liquid.
22. The method according to claim 19, wherein the phase change
causes condensation on the substrate.
23. The method according to claim 19, further comprising heating
condensed vapor using a heater attached to the substrate table.
24. A lithographic apparatus configured to project a patterned
radiation beam onto a target portion of a substrate, the apparatus
comprising: a liquid supply system configured to at least partly
fill a space between a projection system and the substrate with
liquid; a barrier structure configured to substantially contain the
liquid within the space; and a heat pipe in a part of the
lithographic apparatus arranged to contact the liquid, the heat
pipe having, in use, therein vapor and configured to enable phase
change of the vapor to thermally condition locations of the part of
the lithographic apparatus where a thermal load is likely to occur
due to the liquid.
25. The lithographic apparatus according to claim 24, wherein the
phase change causes condensation on a portion of the heat pipe
nearest to the point of contact of the liquid with the part of the
lithographic apparatus.
26. The lithographic apparatus according to claim 24, wherein the
part of the lithographic apparatus further comprises a heater
attached thereto, the heater configured to heat condensed
vapor.
27. A device manufacturing method, comprising: supplying a liquid
to a space between a projection system of a lithographic apparatus
and a substrate supported by a substrate table, the liquid at least
partially contained by a liquid confinement structure; flowing
vapor in a heat pipe arranged in a part of the lithographic
apparatus, the part of the lithographic apparatus arranged to
contact the liquid; and causing phase change of the vapor to enable
thermal conditioning of locations of the part of the lithographic
apparatus where a thermal load is likely to occur due to the
liquid.
Description
FIELD
The present invention relates to a lithographic apparatus and a
method for manufacturing a device. In particular, the present
invention relates to a lithographic apparatus comprising a liquid
confinement system configured to confine liquid between a
projection system and a substrate to be patterned by the projection
system within the lithographic apparatus.
BACKGROUND
A lithographic apparatus is a machine that applies a desired
pattern onto a substrate, usually onto a target portion of the
substrate. A lithographic apparatus can be used, for example, in
the manufacture of integrated circuits (ICs). In that instance, a
patterning device, which is alternatively referred to as a mask or
a reticle, may be used to generate a circuit pattern to be formed
on an individual layer of the IC. This pattern can be transferred
onto a target portion (e.g. comprising part of, one, or several
dies) on a substrate (e.g. a silicon wafer). Transfer of the
pattern is typically via imaging onto a layer of
radiation-sensitive material (resist) provided on the substrate. In
general, a single substrate will contain a network of adjacent
target portions that are successively patterned. Known lithographic
apparatus include so-called steppers, in which each target portion
is irradiated by exposing an entire pattern onto the target portion
at one time, and so-called scanners, in which each target portion
is irradiated by scanning the pattern through a radiation beam in a
given direction (the "scanning"-direction) while synchronously
scanning the substrate parallel or anti-parallel to this direction.
It is also possible to transfer the pattern from the patterning
device to the substrate by imprinting the pattern onto the
substrate.
It has been proposed to immerse the substrate in the lithographic
projection apparatus in a liquid having a relatively high
refractive index, e.g. water, so as to fill a space between the
final element of the projection system and the substrate. The point
of this is to enable imaging of smaller features since the exposure
radiation will have a shorter wavelength in the liquid. (The effect
of the liquid may also be regarded as increasing the effective NA
of the system and also increasing the depth of focus). Other
immersion liquids have been proposed, including water with solid
particles (e.g. quartz) suspended therein.
However, submersing the substrate or substrate and substrate table
in a bath of liquid (see, for example, U.S. Pat. No. 4,509,852,
hereby incorporated in its entirety by reference) means that there
is a large body of liquid that must be accelerated during a
scanning exposure. This requires additional or more powerful motors
and turbulence in the liquid may lead to undesirable and
unpredictable effects.
One of the solutions proposed is for a liquid supply system to
provide liquid on only a localized area of the substrate and in
between the final element of the projection system and the
substrate using a liquid confinement system (the substrate
generally has a larger surface area than the final element of the
projection system). One way which has been proposed to arrange for
this is disclosed in PCT patent application publication WO
99/49504, hereby incorporated in its entirety by reference. As
illustrated in FIGS. 2 and 3, liquid is supplied by at least one
inlet IN onto the substrate, preferably along the direction of
movement of the substrate relative to the final element, and is
removed by at least one outlet OUT after having passed under the
projection system. That is, as the substrate is scanned beneath the
element in a -X direction, liquid is supplied at the +X side of the
element and taken up at the -X side. FIG. 2 shows the arrangement
schematically in which liquid is supplied via inlet IN and is taken
up on the other side of the element by outlet OUT which is
connected to a low pressure source. In the illustration of FIG. 2
the liquid is supplied along the direction of movement of the
substrate relative to the final element, though this does not need
to be the case. Various orientations and numbers of in- and
out-lets positioned around the final element are possible, one
example is illustrated in FIG. 3 in which four sets of an inlet
with an outlet on either side are provided in a regular pattern
around the final element.
In European patent application publication no. EP 1420300 and U.S.
patent application publication no. US 2004-0136494, each hereby
incorporated in their entirety by reference, the idea of a twin or
dual stage immersion lithography apparatus is disclosed. Such an
apparatus is provided with two tables for supporting a substrate.
Leveling measurements are carried out with a table at a first
position, without immersion liquid, and exposure is carried out
with a table at a second position, where immersion liquid is
present. Alternatively, the apparatus has only one table.
A problem with having a liquid in an immersion system as described
above is that there is the risk of evaporation of the immersion
liquid. The evaporation of the immersion liquid may have one or
more consequences. A first is a possible problem of localized
cooling of the substrate, resulting in the shrinkage of the
substrate and thus overlay and focus errors from bimetallic bending
caused by differences in the coefficient of thermal expansion
between the substrate and the substrate table. Even if the
substrate and the substrate table have the same coefficient of
thermal expansion, a temperature gradient in the z-plane may cause
bending and thereby possibly introduce focus errors. A second is
the possible presence of drying stains on the substrate surface. A
third consequence is the possible cooling of the liquid confinement
system, which indirectly cools the projection system and may cause
spherical aberrations in the projected beam. Furthermore, a
temperature change caused by evaporation may cause the substrate
table or the substrate holder sizes and shapes to change. The
position stability and signals of the sensors on the substrate
table may be prone to drifting if, for example, the substrate table
changes shape. Finally, indirect cooling of the immersion liquid by
the cooled liquid confinement system may result in refractive index
variation in the liquid, which in turn may cause focus offsets and
distortions in the projected beam and thus in the pattern.
The operation of the lithographic apparatus as a whole is state
dependent and so any variation in energy in any of the parts of the
system may lead to errors in the exposure of the resist layer on
the substrate. The concentration difference in relative humidity
just above a liquid film on the substrate, substrate table,
substrate holder and sensors may cause the liquid in the liquid
film to evaporate, causing one or more (or other) of the problems
outlined above.
There are several places in the immersion system where evaporation
of the immersion liquid may occur. These are:
1. between the liquid confinement system and the substrate;
2. on the surface of the substrate after wetting by the liquid
confinement system;
3. in the exhaust channels inside the liquid confinement system;
and/or
4. in a gutter or gap between the substrate holder and the
substrate table containing the substrate holder.
Evaporation at these places may lead to temperature reduction and
therefore may lead to energy loss in or at the projection system,
the immersion fluid, the liquid confinement system, the sensors,
the substrate, the substrate holder and the substrate table that
contains the substrate holder and the substrate. The substrate
table is sometimes referred to as a "mirror block" and the
substrate holder is sometimes referred to as a "pimple plate"
because of the pimples that often cover it surface to support the
substrate. The substrate table supports the substrate holder, which
in turn holds the substrate away from the surface of the substrate
table.
There are one or more reasons why net evaporation would be greater
than net condensation, possibly causing a net loss of energy in the
system. A first possible reason is the use of a gas knife, which is
used to push the liquid film on the substrate back and drag it
forward as the substrate moves in and out of the immersion system.
The gas knife does this using a pressurized gas jet. Evaporation is
a possible side effect of the movement of the liquid film. If
liquid loss from the surface of the substrate is too large, the
liquid film pushed by the gas knife is too large and the gas knife
collapses. If this occurs, the liquid film evaporates outside the
immersion system in the ambient environment.
A second possible reason is when the gas knife is not used or not
completely effective, the substrate and substrate table are moved
relative to the liquid confinement structure, so that a portion of
the substrate and substrate table will be exposed to the atmosphere
surrounding the lithographic apparatus. Any liquid remaining on the
substrate or substrate table is likely to evaporate into the
atmosphere, thus reducing the energy of the system. Evaporation of
liquid from the liquid supply or exhaust system cools down the
entire liquid confinement system, which cools down the immersion
liquid, thus reducing the energy of the system and causing one or
more (or other) of the problems described above.
SUMMARY
It is desirable to provide a system and method that efficiently and
effectively eliminates the reduction of net energy in a liquid
confinement system of a lithographic apparatus.
According to an aspect of the present invention, there is provided
a lithographic apparatus configured to project a patterned
radiation beam onto a target portion of a substrate held on a
substrate table, the apparatus comprising:
a liquid supply system configured to at least partly fill a space
between a projection system and the substrate table with
liquid;
a liquid confinement structure arranged to at least partially
contain the liquid within the space;
a substrate table displacement system arranged to move the
substrate table along a path relative to the liquid confinement
structure, thereby to move the target portion over the surface of
the substrate;
a timetable comprising positions and timings of the substrate
displacement system at which the substrate is likely to be
undergoing localized cooling; and
a liquid evaporation or condensation controller arranged to control
a net rate of energy lost through evaporation or condensation of
liquid supplied by the liquid supply system by synchronizing
evaporation or condensation controlling techniques with the
timetable.
By liquid evaporation controller, it is meant not only a system
that directly inhibits evaporation of the liquid, but also a system
that indirectly reduces the unwanted energy transfer of the system,
for example, by heating the overall system so condensation does not
occur, or adjusting the properties of the liquid or of the liquid
supply system such that the liquid either is prevented from
evaporating or the effect of evaporation is compensated for.
According to an aspect of the present invention, there is provided
a lithographic apparatus configured to project a patterned
radiation beam onto a target portion of a substrate held on a
substrate holder of a substrate table, the apparatus
comprising:
a liquid supply system configured to at least partly fill a space
between a projection system and the substrate table with
liquid;
a liquid confinement structure arranged to at least partially
contain the liquid within the space;
a substrate table displacement system arranged to move the
substrate table along a path relative to the liquid confinement
structure, thereby to move the target portion over the surface of
the substrate; and
a liquid evaporation or condensation controller arranged to control
a net rate of energy lost through evaporation or condensation of
liquid supplied by the liquid supply system by synchronizing
evaporation or condensation controlling techniques.
According to an aspect of the invention, there is provided a device
manufacturing method, comprising:
supplying a liquid to a space between a projection system of a
lithographic apparatus and a substrate using a liquid supply
system;
controlling a net rate of evaporation or condensation of liquid
supplied by the liquid supply system by synchronizing evaporation
or condensation with a timetable comprising positions and timings
of the substrate at which the substrate is likely to be undergoing
localized cooling; and
projecting a patterned radiation beam through the liquid onto a
target portion of the substrate.
According to an aspect of the invention, there is provided a device
manufacturing method, comprising:
supplying a liquid to a space between a projection system of a
lithographic apparatus and a substrate held by a substrate table,
the liquid at least partially contained by a liquid confinement
structure;
controlling a rate of energy lost through evaporation of the
supplied liquid;
moving the substrate table along a path relative to the liquid
confinement structure, thereby moving a target portion over a
surface of the substrate;
heating a portion of the substrate according to the (i) position,
(ii) velocity, (iii) acceleration, (iv) path, or (v) any
combination of (i)-(iv) of the substrate table relative to that of
the liquid confinement structure, the local substrate temperature,
or the local substrate table temperature;
switching between heating and controlling the rate of energy lost;
and
projecting a patterned radiation beam through the liquid onto a
target portion of the substrate.
Further aspects of the invention include condensation principles,
adsorption principles and phase change material principles as
methods of evaporation energy controlling techniques. Condensation
principles control the amount of vapor available to condense on a
surface--the greater the amount, the greater the heat energy is
transferred to the surface on which the condensation occurs.
Adsorption principles occur during the cooling down and heating up
of materials--as a material cools down, gas is adsorbed into the
material. Desorption of the gas occurs during unloading of the
substrate so that in the subsequent substrate cycle, the absorption
process may start again. During cooling, the state of a material
changes, releasing energy. Regeneration of the phase change
material is required during the unloading of a substrate, so that
with the next substrate cycle, the process may start again.
BRIEF DESCRIPTION OF THE DRAWINGS
Embodiments of the invention will now be described, by way of
example only, with reference to the accompanying schematic drawings
in which corresponding reference symbols indicate corresponding
parts, and in which:
FIG. 1 depicts a lithographic apparatus according to an embodiment
of the invention;
FIGS. 2 and 3 depict a liquid supply system used in a prior art
lithographic projection apparatus;
FIG. 4 depicts a liquid supply system according to another prior
art lithographic projection apparatus;
FIG. 5 depicts a liquid confinement system according to an
embodiment of the present invention;
FIG. 6 depicts a liquid evaporation controlling system according to
a first embodiment of the invention;
FIG. 7 depicts a liquid evaporation controlling system according to
a second embodiment of the invention;
FIG. 8 depicts an energy regulating system according to a third
embodiment of the invention;
FIGS. 9a and 9b depict a liquid evaporation controlling system
according to a fourth embodiment of the invention;
FIG. 10 depicts an energy regulating system according to a fifth
embodiment of the invention;
FIG. 11 depicts an energy regulating system according to a sixth
embodiment of the invention;
FIG. 12 depicts a temperature sensor according to a seventh
embodiment of the invention; and
FIG. 13 depicts alternative positions for a temperature sensor
according to further embodiments of the invention.
DETAILED DESCRIPTION
FIG. 1 schematically depicts a lithographic apparatus according to
an embodiment of the invention. The apparatus comprises:
an illumination system (illuminator) IL configured to condition a
radiation beam B (e.g. UV radiation or DUV radiation).
a support structure (e.g. a mask table) MT constructed to support a
patterning device (e.g. a mask) MA and connected to a first
positioner PM configured to accurately position the patterning
device in accordance with certain parameters;
a substrate table (e.g. a wafer table) WT constructed to hold a
substrate (e.g. a resist-coated wafer) W and connected to a second
positioner PW configured to accurately position the substrate in
accordance with certain parameters; and
a projection system (e.g. a refractive projection lens system) PS
configured to project a pattern imparted to the radiation beam B by
patterning device MA onto a target portion C (e.g. comprising one
or more dies) of the substrate W.
The illumination system may include various types of optical
components, such as refractive, reflective, magnetic,
electromagnetic, electrostatic or other types of optical
components, or any combination thereof, for directing, shaping, or
controlling radiation.
The support structure holds the patterning device in a manner that
depends on the orientation of the patterning device, the design of
the lithographic apparatus, and other conditions, such as for
example whether or not the patterning device is held in a vacuum
environment. The support structure can use mechanical, vacuum,
electrostatic or other clamping techniques to hold the patterning
device. The support structure may be a frame or a table, for
example, which may be fixed or movable as required. The support
structure may ensure that the patterning device is at a desired
position, for example with respect to the projection system. Any
use of the terms "reticle" or "mask" herein may be considered
synonymous with the more general term "patterning device."
The term "patterning device" used herein should be broadly
interpreted as referring to any device that can be used to impart a
radiation beam with a pattern in its cross-section such as to
create a pattern in a target portion of the substrate. It should be
noted that the pattern imparted to the radiation beam may not
exactly correspond to the desired pattern in the target portion of
the substrate, for example if the pattern includes phase-shifting
features or so called assist features. Generally, the pattern
imparted to the radiation beam will correspond to a particular
functional layer in a device being created in the target portion,
such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples
of patterning devices include masks, programmable mirror arrays,
and programmable LCD panels. Masks are well known in lithography,
and include mask types such as binary, alternating phase-shift, and
attenuated phase-shift, as well as various hybrid mask types. An
example of a programmable mirror array employs a matrix arrangement
of small mirrors, each of which can be individually tilted so as to
reflect an incoming radiation beam in different directions. The
tilted mirrors impart a pattern in a radiation beam, which is
reflected by the mirror matrix.
The term "projection system" used herein should be broadly
interpreted as encompassing any type of projection system,
including refractive, reflective, catadioptric, magnetic,
electromagnetic and electrostatic optical systems, or any
combination thereof, as appropriate for the exposure radiation
being used, or for other factors such as the use of an immersion
liquid or the use of a vacuum. Any use of the term "projection
lens" herein may be considered as synonymous with the more general
term "projection system".
As here depicted, the apparatus is of a transmissive type (e.g.
employing a transmissive mask). Alternatively, the apparatus may be
of a reflective type (e.g. employing a programmable mirror array of
a type as referred to above, or employing a reflective mask).
The lithographic apparatus may be of a type having two (dual stage)
or more substrate tables (and/or two or more mask tables). In such
"multiple stage" machines the additional tables may be used in
parallel, or preparatory steps may be carried out on one or more
tables while one or more other tables are being used for
exposure.
Referring to FIG. 1, the illuminator IL receives a radiation beam
from a radiation source SO. The source and the lithographic
apparatus may be separate entities, for example when the source is
an excimer laser. In such cases, the source is not considered to
form part of the lithographic apparatus and the radiation beam is
passed from the source SO to the illuminator IL with the aid of a
beam delivery system BD comprising, for example, suitable directing
mirrors and/or a beam expander. In other cases the source may be an
integral part of the lithographic apparatus, for example when the
source is a mercury lamp. The source SO and the illuminator IL,
together with the beam delivery system BD if required, may be
referred to as a radiation system.
The illuminator IL may comprise an adjuster AD for adjusting the
angular intensity distribution of the radiation beam. Generally, at
least the outer and/or inner radial extent (commonly referred to as
.sigma.-outer and .sigma.-inner, respectively) of the intensity
distribution in a pupil plane of the illuminator can be adjusted.
In addition, the illuminator IL may comprise various other
components, such as an integrator IN and a condenser CO. The
illuminator may be used to condition the radiation beam, to have a
desired uniformity and intensity distribution in its
cross-section.
The radiation beam B is incident on the patterning device (e.g.,
mask MA), which is held on the support structure (e.g., mask table
MT), and is patterned by the patterning device. Having traversed
the mask MA, the radiation beam B passes through the projection
system PS, which focuses the beam onto a target portion C of the
substrate W. With the aid of the second positioner PW and position
sensor IF (e.g. an interferometric device, linear encoder or
capacitive sensor), the substrate table WT can be moved accurately,
e.g. so as to position different target portions C in the path of
the radiation beam B. Similarly, the first positioner PM and
another position sensor (which is not explicitly depicted in FIG.
1) can be used to accurately position the mask MA with respect to
the path of the radiation beam B, e.g. after mechanical retrieval
from a mask library, or during a scan. In general, movement of the
mask table MT may be realized with the aid of a long-stroke module
(coarse positioning) and a short-stroke module (fine positioning),
which form part of the first positioner PM. Similarly, movement of
the substrate table WT may be realized using a long-stroke module
and a short-stroke module, which form part of the second positioner
PW. In the case of a stepper (as opposed to a scanner) the mask
table MT may be connected to a short-stroke actuator only, or may
be fixed. Mask MA and substrate W may be aligned using mask
alignment marks M1, M2 and substrate alignment marks P1, P2.
Although the substrate alignment marks as illustrated occupy
dedicated target portions, they may be located in spaces between
target portions (these are known as scribe-lane alignment marks).
Similarly, in situations in which more than one die is provided on
the mask MA, the mask alignment marks may be located between the
dies.
The depicted apparatus could be used in at least one of the
following modes:
1. In step mode, the mask table MT and the substrate table WT are
kept essentially stationary, while an entire pattern imparted to
the radiation beam is projected onto a target portion C at one time
(i.e. a single static exposure). The substrate table WT is then
shifted in the X and/or Y direction so that a different target
portion C can be exposed. In step mode, the maximum size of the
exposure field limits the size of the target portion C imaged in a
single static exposure.
2. In scan mode, the mask table MT and the substrate table WT are
scanned synchronously while a pattern imparted to the radiation
beam is projected onto a target portion C (i.e. a single dynamic
exposure). The velocity and direction of the substrate table WT
relative to the mask table MT may be determined by the
(de-)magnification and image reversal characteristics of the
projection system PS. In scan mode, the maximum size of the
exposure field limits the width (in the non-scanning direction) of
the target portion in a single dynamic exposure, whereas the length
of the scanning motion determines the height (in the scanning
direction) of the target portion.
3. In another mode, the mask table MT is kept essentially
stationary holding a programmable patterning device, and the
substrate table WT is moved or scanned while a pattern imparted to
the radiation beam is projected onto a target portion C. In this
mode, generally a pulsed radiation source is employed and the
programmable patterning device is updated as required after each
movement of the substrate table WT or in between successive
radiation pulses during a scan. This mode of operation can be
readily applied to maskless lithography that utilizes programmable
patterning device, such as a programmable mirror array of a type as
referred to above.
Combinations and/or variations on the above described modes of use
or entirely different modes of use may also be employed.
A further immersion lithography solution with a localized liquid
supply system is shown in FIG. 4. Liquid is supplied by two groove
inlets IN on either side of the projection system PL and is removed
by a plurality of discrete outlets OUT arranged radially outwardly
of the inlets IN. The inlets IN and OUT can be arranged in a plate
with a hole in its center and through which the projection beam is
projected. Liquid is supplied by one groove inlet IN on one side of
the projection system PL and removed by a plurality of discrete
outlets OUT on the other side of the projection system PL, causing
a flow of a thin film of liquid between the projection system PL
and the substrate W. The choice of which combination of inlet IN
and outlets OUT to use can depend on the direction of movement of
the substrate W (the other combination of inlet IN and outlets OUT
being inactive).
Another solution which has been proposed is to provide the liquid
supply system with a liquid confinement structure which extends
along at least a part of a boundary of the space between the final
element of the projection system and the substrate table. The
liquid confinement structure is substantially stationary relative
to the projection system in the XY plane though there may be some
relative movement in the Z direction (in the direction of the
optical axis). In an embodiment, a seal is formed between the
liquid confinement structure and the surface of the substrate. The
seal may be a contactless seal such as a gas seal.
FIG. 5 shows an example of such a solution and depicts a liquid
confinement system comprising a reservoir configured to hold
immersion liquid of the immersion system according to an embodiment
of the invention.
The reservoir 10 forms a contactless seal to the substrate around
the image field of the projection system so that liquid is confined
to fill a space between the substrate surface and the final element
of the projection system. The reservoir is formed by a liquid
confinement structure 12 positioned below and surrounding the final
element of the projection system PL. Liquid is brought into the
space below the projection system and within the liquid confinement
structure 12 with inlet 13. The liquid confinement structure 12
extends a little above the final element of the projection system
and the liquid level rises above the final element so that a buffer
of liquid is provided. The liquid confinement structure 12 has an
inner periphery that at the upper end preferably closely conforms
to the shape of the projection system or the final element thereof
and may, e.g., be round. At the bottom, the inner periphery closely
conforms to the shape of the image field, e.g., rectangular, though
this need not be the case.
The liquid is confined in the reservoir by a gas seal 16 between
the bottom of the liquid confinement structure 12 and the surface
of the substrate W. The gas seal is formed by gas, e.g. air,
synthetic air, N.sub.2 or an inert gas, provided under pressure via
inlet 15 to the gap between liquid confinement structure 12 and
substrate and extracted via outlet 14. The overpressure on the gas
inlet 15, vacuum level on the outlet 14 and geometry of the gap are
arranged so that there is a high-velocity gas flow inwards that
confines the liquid.
A gap also exists under the substrate W, between the bottom surface
of the substrate W and the top surface of a substrate holder (also
known as a burl plate or pimple plate) located in an indent in the
substrate table WT. This gap may also comprise a gas seal of sorts
to keep the bottom surface of the substrate W dry and free from the
energy loss problems discussed herein.
A net energy loss is caused when more immersion liquid 11
evaporates than condenses (e.g. when evaporated liquid is removed
from the system before the energy can be returned to the system via
condensation). Localized energy fluctuations may cause distortion
of the substrate or of the resist layer on the substrate. An
embodiment of the present invention seeks to prevent localized
energy fluctuations by reducing the evaporation rate, increasing
the condensation rate, or both.
To compensate for this temperature reduction and energy loss when
net evaporation is greater than net condensation, there are several
possible solutions.
A first solution is to supply humidified compressed clean gas (e.g.
air) to the immersion system, for example, via the gas knife, in
order to reduce the parasitic evaporation of the immersion liquid
by reducing the difference in relative humidity of the atmosphere
inside the immersion system and the gas in the gas knife. Overlay
errors and other problems linked to the presence of an immersion
liquid and liquid confinement structure 12 may be tackled by a
liquid evaporation controller, which targets and controls the rate
of evaporation of immersion liquid in the region of the substrate.
Molecules of liquid absorb energy from the surroundings in order to
evaporate and, particularly if pumped away, the cooling that
results can result in significant and non-uniform variations in the
temperature of critical components such as the substrate.
Thermally-induced distortions can lead to errors in the image
finally exposed to the substrate. For example, evaporation of
immersion liquid left behind on the substrate after the liquid
confinement structure 12 has passed by can cause local temperature
drops of up to 3 degrees K. As a result of this, at least a 20 nm
single machine overlay error may typically result. However, this
solution has a possible drawback of not being terribly efficient
because the required over-pressure of the gas in the liquid
confinement system for the gas knife means that 100% relative
humidity may not be achieved after the expansion of the compressed
gas. This is why evaporation nonetheless may occurs with this
solution.
A second solution is thermal conditioning (i.e. supplying energy to
the substrate table to reduce net energy loss) of the substrate W
with a liquid flow to the substrate holder WH and/or the substrate
table WT. The intention of this is to supply the evaporation energy
with as small a temperature change as possible compared to a idle
system and thereby supplying the immersion system with energy to
compensate for the energy loss through evaporation, reducing
thermal impact causing, for example, thermo-mechanical
deformations. In other words, the aim achieved by thermal
conditioning is to supply the energy to the system (particularly to
the substrate) that is lost during the evaporation process, thereby
limiting the temperature drop in the immersion liquid and/or its
surroundings. The substrate table should remain at the system
reference temperature. The same problems occur with this solution
in that the whole substrate is cooled down and localized
temperature fluctuations may not be inhibited.
A third solution in which errors caused by the cooling effects of
evaporating immersion liquid are tackled is to provide a substrate
heater configured to heat a portion of the substrate W according to
the position, velocity, acceleration and/or path of the substrate
table WT relative to the liquid confinement structure or the local
substrate and/or substrate table temperature. Other parameters on
which the heater characteristics may be dependent are the resist
characteristics--in particular, the contact angle of liquid on the
surface, irradiated dose on the resist and the substrate used for
the resist. The substrate heater may provide heating via one or
more of a number of mechanisms. These may include one or more of
the following: an infra-red emission source, a glow wire electrical
resistance heater and a hot gas jet. Important factors when
deciding which kind of heater to use include how finely and quickly
the heating power needs to be adjusted, as well as how effectively
the heater can be produced in miniature form. The latter factor
will become more or less important depending on whether the heater
needs to be embedded in or near the material whose temperature it
is intended to regulate (such as a glow wire, for example, embedded
in the substrate holder and/or substrate table) or whether the
heater works to some extent at a distance (such as a
radiation-emitting source or temperature-controlled gas jet
source). In the case of a radiation-emitting source, the wavelength
distribution of the radiation should be chosen so as not to react
with resist compositions on the substrate (infra-red radiation
would be safe in this regard for most resists of interest).
Selection of radiation intensity will depend on the optical
properties of the resist (such as its reflectivity). The heating
system should be tuned for a process or have an adequate
temperature sensing mechanism. There are likely advantages and
disadvantages with both--tuning may require a less complex design,
whereas temperature sensing may give a greater system availability
than tuning.
As discussed above, one of the reasons more liquid may evaporate
than condense is that it is exposed to atmospheric conditions, for
example, on the top surface of the substrate W or of the substrate
table WT. FIG. 6 shows the substrate table WT with respect to the
liquid confinement structure 12 and arrow 32 shows the direction in
which the substrate table WT travels; i.e. laterally with respect
to the liquid confinement structure 12. In order to know at what
locations evaporation is most likely to occur, in an embodiment, a
timetable 34 is created which comprises time and the position,
velocity, acceleration and/or path of the substrate table WT with
respect to the liquid confinement structure 12, the local substrate
temperature, the local substrate temperature and/or exposure layout
relative to various points in time. Liquid evaporation controller
30 may be used in conjunction with timetable 34. The liquid
evaporation controller 30 may take several forms, as long as the
net energy extraction due to evaporation is controlled (rather than
the evaporation itself being controlled). In other words, the
purpose of the liquid evaporation controller is to prevent the loss
of heat energy from the system via evaporation of liquid containing
some of that heat energy. For example, the liquid evaporation
controller 30 may heat the gas 16 which is supplied via inlet 15
and removed by outlet 14 such that the such that thermal
equilibrium of the system remains constant, even as the substrate
moves out from underneath the liquid confinement structure.
Alternatively, the evaporation controller 30 may supply compressed
humidified gas 16 via the inlet 15 and outlet 14. In an embodiment,
the gas may be any suitable gas, such as air and/or nitrogen
(nitrogen may be particularly useful when a liquid is used in the
immersion system that cannot be exposed to air). This reduces the
evaporation from the top surface of substrate W, thus equilibrating
evaporation and condensation and thereby creating an energy
equilibrium in the immersion system. With humidified gas, it is the
evaporation that is suppressed, rather than the transfer of heat
energy from the substrate to the gas. In an embodiment, a gas knife
supplies a stream of compressed humidified or heated gas to the
substrate surface between projections by the projection system.
An alternative or additional evaporation controller is shown in
FIG. 7. In this embodiment, humidified or heated gas 16 may still
be introduced via the liquid confinement structure 12. Additionally
or alternatively, a temperature conditioned liquid and/or liquid
vapor flow is supplied to the substrate holder. This lowers the
temperature below the substrate W in the substrate table WT, thus
increasing the rate of condensation at cool spots on the bottom
surface of the substrate W because most vapor condenses to liquid
when it is cooled down. The energy from the vapor is then
transferred to the substrate (and other surfaces) on which the
liquid has condensed. This increase in condensation on the bottom
of the substrate and decrease in evaporation on the top of the
substrate may be finely balanced in order to ensure that the
substrate substantially maintains its thermal equilibrium, even
when it has been moved out of range of protection of the liquid
confinement structure 12.
A stable reference temperature is readily achieved by introducing a
heat pipe 48 in the substrate holder WH, below the substrate W.
Water (or any other suitable liquid) flowing through the heat pipe
48 may be conditioned using temperature 49 and/or pressure 60
sensors and a heater 61, maintaining a constant temperature in the
pipe. Water vapor coming from the water in the heat pipe 48 will
only condense at cold spots in the substrate table, transferring
the latent heat from the vapor to the cold spot. No complex control
mechanism is therefore required and a temperature overshoot is not
possible. Pressure sensors ensure that the pressure of, for
example, the water vapor is not too high. The pressure of the water
vapor needs to be controlled to a tolerance of better than 4 Pa for
a condensation temperature stability of 20 mK, In an embodiment,
the heat pipe is empty of gas and non-condensable fluid, and is
sealed from the atmosphere.
Any gas, or other fluids other than the working fluid, in the heat
pipe 48 should be pumped out before the system is closed in order
to optimize the heat transfer from the liquid and liquid vapor to
the cold spots in the substrate holder. The heater that heats the
liquid can be placed directly in the liquid or under the substrate
table, thereby keeping the bottom part of the substrate table
heated to a stable temperature, which in turn keeps the enclosed
liquid at a stable temperature.
To avoid splashing of the liquid, a sponge-like material 64 can be
placed in liquid grooves in the substrate table WT, around the
substrate holder WH. The sponge-like material is also placed such
that it removes the liquid from the condensation areas in order to
make those locations available for further vapor to condense.
Furthermore, the heat pipe 48 can be made up of several channels
and these channels can be positioned as close to the surface of the
substrate holder WH as possible so that the temperature of the
water in the channels affects the temperature of the substrate W
most directly. There can be hollow pimples or dimples 62 in the
substrate holder WH, below the substrate, and these pimples or
dimples can contain passages 63 that allow water vapor to pass
through to the underside of the substrate and condense directly
onto the cold spots of the substrate, rather than just at the cold
spots of the substrate holder. In this way, the heat transfer is
more direct and the time taken to transfer the heat is reduced,
reducing the chance of temperature fluctuations.
Many substrate tables are made of materials such as "Zerodur" or
Cordierite that have low conductance and a low expansion
coefficient. This can make it difficult to make a thermal
equilibrating system that reacts quickly to fluctuations in
temperature. Furthermore, the thermal resistance between the
substrate surface and the cooling medium (such as water) is so
large that temperature drops in the substrate may occur, which
result in substrate deformations as described above. Not only this,
but the flow of the liquid in the liquid supply system that passes
over the substrate is great and may introduce disturbances in the
liquid. The system as described in this embodiment has an advantage
of not being limited by these problems. By allowing a fluid to
condense at, for example, 22.degree. C. on the bottom surface of a
substrate, a very effective heat transfer coefficient and
consequent thermal conditioning of the substrate may be enabled.
The fluid may be water at low pressure such as 2300 Pa (or 23
mbar), or an acetone, ether or alcohol, or something similar. By
adjusting the pressure of the fluid, the condensation temperature
of that fluid can be tuned to the correct value for the specific
system and substrate.
The supply and temperature control of the fluid may take place in
fixed components of the lithographic apparatus, but the
condensation process itself occurs only where heat is being
extracted from the system. To prevent condensation from occurring
in the fluid supply line, a two-phase mixture of gas and liquid may
be pumped through channels in the substrate table, keeping the
fluid at an optimum temperature. A microsieve as described below
may be introduced into the substrate table to separate the gas and
liquid in the two-phase mixture.
Humidified gas (e.g., humidified air) that is introduced to the top
surface of the substrate is prone to expansion after the gas knife
has passed over the substrate. This causes a relative humidity of
less than 100%. In the area between the gas knife and a gas knife
extraction conduit, the humidified gas cools down and its humidity
increases again because colder gas has a lower humidity capacity
than warm gas. Warm, humidified gas may therefore be supplied after
the gas knife. In an embodiment, for a drop of 0.4 bar during the
passing of the gas knife, water saturated air at approximately
28.degree. C. may be used in order to give post-gas knife air at
22.degree. C. with 100% relative humidity. Evaporated liquid in the
warm gas is condensed out again after expansion to leave a null
energy result on the substrate.
FIG. 8 shows an alternative or additional embodiment that may be
used to compensate for evaporation from the top of the substrate W.
As the substrate W moves towards the right, in the direction of the
arrow, the upper surface of the substrate W, which has been in
contact with the immersion liquid 11, undergoes drying by a gas
knife 40. The gas knife supplies a wedge of gas (e.g., air) to the
surface of the substrate in order to remove the final thin film of
immersion liquid 11 remaining on the substrate after the liquid
confinement structure 12 has been removed. This is a common time at
which the substrate will cool down and thereby lose energy. The
typical loss of local cooling power caused by the gas knife is of
the order of 20 Watts on hydrophilic surfaces (e.g. at a 60.degree.
contact angle) when using air.
There are one or more ways to compensate for this evaporation
energy loss using the gas knife. A first is to supply high pressure
humidified gas (e.g., air) via the gas knife. Another is to heat
the gas (e.g., air) in the gas knife, for example using a radiation
source 38 such as an T ED or a microwave cavity with one or more
conditioning tubes.
The embodiment shown in FIG. 8 has a temperature sensor 22 which
inputs information into a controller (such as a CPU) 36, along with
timetable information 34. When the substrate W is most likely to be
losing energy through evaporation caused by the gas knife 40, the
CPU 36 controls the radiation source 38 in order to increase the
local surface temperature of the substrate W at that point that it
is likely to be losing energy, thereby reestablishing the thermal
equilibrium.
The wavelength range of the radiation source must be chosen so that
it does not expose the resist on the surface of the substrate, and
so that the light is absorbed by the same amount on all process
layers. Multiple radiation sources may be arranged over the
periphery of the gas knife so that the section of the substrate
where an "evaporation trail" is left behind may be compensated for
effectively. Further information that may be put into the timetable
(which may also be known as a fast forward table) may be job layout
data, scan speed and/or resist characteristics. The information
supplied by the controller to the radiation source may also steer
the direction in which the radiation source transmits its radiation
in order to more finely control the surface temperature of the
substrate.
FIGS. 9a and 9b show an alternative embodiment of a liquid
evaporation controller. As in the embodiment described above with
respect to FIG. 8, there is a gas knife AK that supplies gas (e.g.,
air) to the surface of the substrate in order to clear the surface
of the substrate of liquid that could evaporate and reduce the heat
energy of the system or leave drying marks that affect the use of
the substrate. Both embodiments also have a gas knife extractor KE
configured to remove gas introduced by the gas knife AK. This
embodiment also contains a microsieve MS that has the purpose of
extracting liquid 11 without extracting gas 52. Keeping the gas 52
and liquid 11 substantially separate means that a mixture is not
created, and the liquid 11 can be reused and the gas 52 reused or
discarded. Substantially preventing a mixture of gas and liquid
also ensures that the gas dries the surface of the substrate
effectively.
When the gas knife AK blows gas onto the surface of the substrate W
that is covered in the liquid 11 (e.g. water), a meniscus is formed
as shown in FIG. 9b between the gas 52 and the liquid 11. Where
there is liquid 11 on both sides of the microsieve MS, the gas
knife extractor causes liquid 11 to be pulled through the
microsieve MS through holes 56. However, where there is gas on one
side of the microsieve MS and liquid on the other, the surface
tension 54 of the liquid 11 holds the gas 52 on one side of the
microsieve MS. In this way, only liquid will be extracted via an
extraction system placed on one side of the microsieve MS. The
microsieve MS may be a Stork Veco microsieve.
The smaller the gap between the microsieve MS and the substrate W,
the better because the meniscus between the gas and liquid is
stronger and will hold the liquid and gas apart at greater scan
speeds of the substrate W under the gas knife AK. The lower limit
of the distance between the microsieve MS and the substrate AK is
dictated by an increased risk in collisions, the smaller the
gap.
The microsieve and gas knife should be arranged at a particular
optimum relative position. The gas knife should be relatively low
to provide sufficient pressure on the substrate W surface. FIG. 9a
shows a cone shape 50 that is the shape of the gas being blown by
the gas knife AK that has a high velocity. There is a boundary 50
at which the velocity of the gas begins to decrease as it mixes
with ambient gas. Ideally, the cone of highest gas velocity touches
the substrate, more ideally, the tip of the cone touches the
substrate. However, the gas knife should not be too close to the
substrate, otherwise the gas actually passing over the surface of
the substrate may have too high a velocity and the liquid on the
surface of the substrate risks evaporating rather than being
"pushed" out of the way and into the extractor.
The microsieve may be approximately 3 mm across. For a given
pressure difference between the liquid 11 above the microsieve MS
and the liquid 11 adjacent the substrate W (this being limited by
the strength of the surface tension in the holes of the microsieve
beyond the meniscus), the flow rate of the liquid 11 can be
adjusted by positioning the meniscus such that an appropriate
proportion of the microsieve has liquid on both sides.
The microsieve MS and the gas knife AK are mounted separately such
that they can be positioned at different heights relative to the
substrate. They are generally fixed to a wall of the liquid supply
system so that they scan the surface of the substrate at the same
time.
An advantage of this embodiment is that most heat loss generally
occurs between the gas knife and the gas knife extractor on the
substrate and this embodiment deals with this particular area. The
amount of liquid 11 on the substrate between the gas knife and the
extractor depends on the height of the microsieve above the
substrate. The more liquid that is left between the gas knife and
the extractor, the more liquid is likely to be left behind by the
gas knife and left on the substrate surface. For this reason, it is
desirable to have the microsieve as low as possible. On the other
hand, the height of the gas knife has been found to be important,
too. An increase in the height from 100 .mu.m to 125 .mu.m may
reduce the heat loss in the substrate by 20%. The gas knife may
work best at a height of up to 200 .mu.m. The lowest point of the
gas knife is therefore recommended to be 50 to 100 .mu.m higher
than the lowest point of the microsieve. As discussed above,
decreasing the heat loss decreases the risk of overlay errors on
the substrate.
FIG. 10 shows another or alternative embodiment for increasing
condensation to the bottom of the substrate, thereby restoring
thermal equilibrium in a different manner from heating the top. The
embodiments may, of course, be combined to enhance the precision of
the thermal equilibrium.
Supplying liquid saturated gas 44 (e.g. saturated ethanol at
approximately 24 mbar or 60 mbar) in the vacuum 42 between the
substrate W and the substrate holder WH will lead to condensation
of liquid (e.g., water) at the cold spots of the substrate W. The
energy loss by condensation will heat the substrate gas
temperature. As long as saturated gas 44 is supplied, the condensed
liquid under the substrate W will not evaporate. To compensate for
average energy losses at the top surface of the substrate W, only a
few micron thick liquid film is required to condense on the bottom
surface of the substrate W.
The liquid on the under side of the substrate W is subsequently
removed by a supply of dry gas after the last exposure of the
substrate, before the substrate is unloaded. Liquid (e.g., water)
evaporation under pressure is very quick. The advantage of this
method of energy regulation is that the energy can be supplied at
the exact location of the substrate W where energy loss is
occurring without any active control. This is because the liquid
will condense at the coldest parts of the substrate W. An
additional advantage is that a temperature overshoot is not
possible. This is because only the heat capacity of the substrate W
participates in the transient behavior of the liquid and thus
energy regulation is carried out in the shortest possible time. In
other words, as the substrate cools down through energy losses on
its top surface, liquid condenses on its bottom surface, thus
transferring energy back in as quickly as it escapes.
FIG. 11 shows a closing plate 46 supplying the bottom surface of
the liquid confinement structure 12, for example, while a substrate
is being swapped. The position, speed, acceleration and timing of
the closing plate may also be added into the information in the
timetable 34. Conditioning the closing plate allows the immersion
liquid to be more easily maintained at the same
temperature/energy.
Not only the closing plate may be thermally conditioned, but any
part of the lithographic apparatus that comes even indirectly in
contact with the substrate, such as any part that comes into
contact with the liquid of the liquid supply system, may be
conditioned such that its temperature remains stabilized. The final
element of the projection system and the liquid supply system both
contact the liquid and both comprise surfaces from which the liquid
may evaporate, particularly during substrate swap, when the closing
plate is in or going into position. One or more canals may be
incorporated into the liquid supply system or around the outside of
the liquid supply system that carry a fluid with carefully
controlled temperature. The advantage of this over heaters is that
no extra heaters and controllers are required. If the same
immersion liquid is used through the one or more canals as in the
space between the substrate and the projection system, the thermal
gradient through the liquid supply system may be more homogeneous
than with using heaters or glow wires or similar.
Alternatively or additionally, one or more electrical heaters may
be implemented into the liquid supply system. These one or more
heaters may be controlled by a feedback controller connected to a
temperature sensor such as those described below. This embodiment,
although it has extra components, has an advantage of being able to
cope with large temperature fluctuations, especially during removal
of the closing plate, for instance.
In an alternative or additional embodiment of the present
invention, evaporation control methods are actively applied when a
reduction in temperature of the substrate is detected. Changes in
temperature may be detected in the immersion liquid itself with a
detector 22 as shown in FIG. 12; or the temperature sensor may be
in different positions around the substrate W itself, such as in
one or more of the positions shown in FIG. 13. Temperature sensor
22a hovers above the substrate W and FIG. 13 shows a lead 24
connecting the temperature sensor to a CPU, such as that shown in
FIG. 8 (CPU 36). Temperature sensor 22b is inside the substrate W
and sensor 22C is in the vacuum 42 between the substrate W and the
substrate holder WH. The scale of the vacuum 42 with respect to the
substrate W and the substrate holder WH has been exaggerated for
illustrative purposes. Sensors may also be placed in the liquid
supply system. Temperature sensors may be positioned in one or a
plurality of these positions in order to sense the temperature of
the substrate in different places, depending on the likely cause of
the loss of energy at that position. A sensor may further be placed
in the substrate table itself, though it would be sensible to have
it in a position such as that shown in FIG. 13 and labeled as 22c
so that it is as close to the surface of the substrate table and/or
the surface of the substrate W as possible because it is the
substrate that may suffer if the thermal equilibrium of the
substrate is lost.
A heating element may be simultaneously switched with the use of
humidified compressed clean gas (e.g., air), for example, as
described with respect to FIG. 6. In this way, the evaporation
process is compensated over time by the energy dissipation of the
heater without the need of a temperature control system.
Evaporation of the liquid film on the substrate takes place when
the liquid confinement system moves (e.g., 25 W energy loss when
the substrate is moving compared to a 5 W energy loss when it is
standing still in a system using liquid and air). The rate of
movement affects the rate of the energy loss. The liquid film is
left on the substrate behind the gas knife, rather than in front
and so the information on the movement pattern and speed of the
substrate with respect to the immersion system is used to switch
both the power of the compensation and the location of the
substrate with respect to the liquid confinement system in the
immersion system. Resist parameters (e.g. wettability by the
immersion liquid) and gas knife gas parameters (e.g. Marangoni
effect) determine the required heating power.
When using a passive system, such as that described with respect to
FIG. 10, with no temperature sensor 22, there is no control loop
and so very few electronics are required. It is therefore easy to
adapt existing machines if required, although new machines may of
course be built with integrated temperature compensation
systems.
Although specific reference may be made in this text to the use of
lithographic apparatus in the manufacture of ICs, it should be
understood that the lithographic apparatus described herein may
have other applications, such as the manufacture of integrated
optical systems, guidance and detection patterns for magnetic
domain memories, flat-panel displays, liquid-crystal displays
(LCDs), thin-film magnetic heads, etc. The skilled artisan will
appreciate that, in the context of such alternative applications,
any use of the terms "wafer" or "die" herein may be considered as
synonymous with the more general terms "substrate" or "target
portion", respectively. The substrate referred to herein may be
processed, before or after exposure, in for example a track (a tool
that typically applies a layer of resist to a substrate and
develops the exposed resist), a metrology tool and/or an inspection
tool. Where applicable, the disclosure herein may be applied to
such and other substrate processing tools. Further, the substrate
may be processed more than once, for example in order to create a
multi-layer IC, so that the term substrate used herein may also
refer to a substrate that already contains multiple processed
layers.
The terms "radiation" and "beam" used herein encompass all types of
electromagnetic radiation, including ultraviolet (UV) radiation
(e.g. having a wavelength of or about 365, 248, 193, 157 or 126
nm).
The term "lens", where the context allows, may refer to any one or
combination of various types of optical components, including
refractive and reflective optical components.
While specific embodiments of the invention have been described
above, it will be appreciated that the invention may be practiced
otherwise than as described. For example, the invention may take
the form of a computer program containing one or more sequences of
machine-readable instructions describing a method as disclosed
above, or a data storage medium (e.g. semiconductor memory,
magnetic or optical disk) having such a computer program stored
therein.
One or more embodiments of the invention may be applied to any
immersion lithography apparatus, in particular, but not
exclusively, those types mentioned above and whether the immersion
liquid is provided in the form of a bath or only on a localized
surface area of the substrate. A liquid supply system as
contemplated herein should be broadly construed. In certain
embodiments, it may be a mechanism or combination of structures
that provides a liquid to a space between the projection system and
the substrate and/or substrate table. It may comprise a combination
of one or more structures, one or more liquid inlets, one or more
gas inlets, one or more gas outlets, and/or one or more liquid
outlets that provide liquid to the space. In an embodiment, a
surface of the space may be a portion of the substrate and/or
substrate table, or a surface of the space may completely cover a
surface of the substrate and/or substrate table, or the space may
envelop the substrate and/or substrate table. The liquid supply
system may optionally further include one or more elements to
control the position, quantity, quality, shape, flow rate or any
other features of the liquid.
The descriptions above are intended to be illustrative, not
limiting. Thus, it will be apparent to one skilled in the art that
modifications may be made to the invention as described without
departing from the scope of the claims set out below.
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