U.S. patent application number 11/839258 was filed with the patent office on 2007-12-06 for modified via bottom structure for reliability enhancement.
This patent application is currently assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION. Invention is credited to Lawrence A. Clevenger, Timothy Joseph Dalton, Louis C. Hsu, Conal Eugene Murray, Carl Radens, Kwong-Hon Wong, Chih-Chao Yang.
Application Number | 20070281469 11/839258 |
Document ID | / |
Family ID | 36179885 |
Filed Date | 2007-12-06 |
United States Patent
Application |
20070281469 |
Kind Code |
A1 |
Clevenger; Lawrence A. ; et
al. |
December 6, 2007 |
MODIFIED VIA BOTTOM STRUCTURE FOR RELIABILITY ENHANCEMENT
Abstract
The present invention provides an interconnect structure that
can be made in the BEOL which exhibits good mechanical contact
during normal chip operations and does not fail during various
reliability tests as compared with the conventional interconnect
structures described above. The inventive interconnect structure
has a kinked interface at the bottom of a via that is located
within an interlayer dielectric layer. Specifically, the inventive
interconnect structure includes a first dielectric layer having at
least one metallic interconnect embedded within a surface thereof;
a second dielectric layer located atop the first dielectric layer,
wherein said second dielectric layer has at least one aperture
having an upper line region and a lower via region, wherein the
lower via region includes a kinked interface; at least one pair of
liners located on at least vertical walls of the at least one
aperture; and a conductive material filling the at least one
aperture.
Inventors: |
Clevenger; Lawrence A.;
(Lagrangeville, NY) ; Dalton; Timothy Joseph;
(Ridgefield, CT) ; Hsu; Louis C.; (Fishkill,
NY) ; Murray; Conal Eugene; (Yorktown Heights,
NY) ; Radens; Carl; (Lagrangeville, NY) ;
Wong; Kwong-Hon; (Wappingers Falls, NY) ; Yang;
Chih-Chao; (Beacon, NY) |
Correspondence
Address: |
SCULLY, SCOTT, MURPHY & PRESSER, P.C.
400 GARDEN CITY PLAZA
SUITE 300
GARDEN CITY
NY
11530
US
|
Assignee: |
INTERNATIONAL BUSINESS MACHINES
CORPORATION
New Orchard Road
Armonk
NY
10504
|
Family ID: |
36179885 |
Appl. No.: |
11/839258 |
Filed: |
August 15, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10964882 |
Oct 14, 2004 |
7282802 |
|
|
11839258 |
Aug 15, 2007 |
|
|
|
Current U.S.
Class: |
438/627 ;
257/E21.495; 257/E21.577; 257/E23.145 |
Current CPC
Class: |
H01L 23/53238 20130101;
H01L 21/76865 20130101; H01L 21/76844 20130101; H01L 23/5226
20130101; H01L 2924/0002 20130101; H01L 21/76843 20130101; H01L
21/76847 20130101; H01L 21/76802 20130101; H01L 23/53295 20130101;
H01L 2924/3011 20130101; H01L 21/76805 20130101; H01L 2924/0002
20130101; H01L 2924/00 20130101 |
Class at
Publication: |
438/627 ;
257/E21.495 |
International
Class: |
H01L 21/4763 20060101
H01L021/4763 |
Claims
1. A method of forming an interconnect structure having a modified
via bottom structure comprising the steps of: forming a second
dielectric layer atop a first dielectric layer having a metallic
interconnect embedded therein; forming at least one aperture within
said second dielectric layer that extends to the metallic
interconnect in said first dielectric layer; forming a liner
material in said at least one aperture; partially removing said
liner material at a bottom surface of said at least one aperture to
create a kinked interface, while simultaneously depositing a second
liner; and forming a conductive material in said at least one
aperture including said kinked interface.
2. The method of claim 1 wherein said forming said at least one
aperture comprises forming a via opening and a line opening,
wherein said via opening is formed prior to said line opening.
3. The method of claim 1 wherein said forming said at least one
aperture comprises forming a via opening and a line opening,
wherein said line opening is formed prior to said via opening.
4. The method of claim 1 wherein a patterned cap layer is formed on
a surface of said first dielectric layer prior to forming said
second dielectric layer.
5. The method of claim 1 wherein said partially removing said liner
material and simultaneous deposition includes ion bombardment and
sputtering.
6. The method of claim 4 wherein said ion bombardment includes one
of Ar, He, Ne, Xe, N.sub.2, H.sub.2, NH.sub.3 or
N.sub.2H.sub.2.
7. The method of claim 4 wherein said ion bombardment leaves a
portion of said first liner on a bottom wall of said via so as to
form said kinked interface.
8. The method of claim 1 wherein said step of partially removing
said liner material and simultaneous deposition is repeated at
least once.
9. The method of claim 1 further comprising a sputter process which
is performed after said partially removing said liner material and
simultaneous deposition step.
10. The method of claim 1 further comprising forming a patterned
hard mask atop said second dielectric layer prior to said forming
said at least one aperture.
11. The method of claim 1 wherein said metallic interconnect and
said conductive material both comprise Cu.
Description
RELATED APPLICATION
[0001] The present application is a divisional application of
parent application Ser. No. 10/964,882, filed on Oct. 14, 2004.
FIELD OF THE INVENTION
[0002] The present invention relates to semiconductor integrated
circuits (ICs), and more particular to a back-end-of-the-line
(BEOL) interconnect that has a modified via bottom structure that
enhances the reliability of the IC. Specifically, the present
invention provides a BEOL interconnect that has a kink via
interconnect structure. The present invention is also related to a
method for fabricating the semiconductor IC structure containing
the modified via bottom structure.
BACKGROUND OF THE INVENTION
[0003] In the semiconductor industry, an interconnect structure is
used to provide wiring between devices on an IC chip and the
overall package. See, for example, U.S. Pat. Nos. 5,071,518,
5,098,860, 5,354,712, 5,545,927, 5,891,802, 5,899,740, 5,904,565,
5,933,753, 6,181,012 and 6,465,376. In such technology, the devices
such as field effect transistors (FETs) are first formed on a
surface of a semiconductor substrate and then an interconnect
structure is formed in the BEOL. A typical interconnect structure
includes at least one dielectric material having a dielectric
constant of about 4.0 or lower in which metal patterns in the form
of vias and/or lines are embedded therein. The interconnect
structure can be either a single damascene structure or a dual
damascene structure.
[0004] FIGS. 1A-1D illustrate various prior art dual damascene
structures. Each of the dual damascene structures shown comprises a
first dielectric 100 that includes a metal interconnect or line 110
which extends perpendicular to the plane of the paper. A first
patterned cap layer 120 is also present on a surface of the first
dielectric 100. A second dielectric 130 is located atop the first
dielectric 100. The second dielectric 130 has a dual damascene
aperture, which includes a lower portion 148 and an upper portion
150, formed therein. The lower portion 148 is referred to in the
art as a via, while the upper portion 150 is referred to in the art
as a line. The dielectrics used in each of the levels are typically
comprised of silicon dioxide, a thermosetting polyarylene resin, an
organosilicate glass such as a carbon-doped oxide (SiCOH), or any
other type of hybrid related dielectric. The via 148 makes contact
with the underlying interconnect 110, while the line 150 extends
over a significant distance to make contact with other elements of
the IC as required by the specific design layout. In the drawings,
the portion of the cap layer 120 at the bottom of the via 148 has
been removed, usually by a different etching chemistry than that
used to etch the second dielectric 130. A patterned hard mask 122
is located atop the second dielectric 130.
[0005] It is conventional in the prior art to deposit a liner 140
over the entire interior of the structure before metallization.
Liner 140 can be a single layer such as shown in FIG. 1A and FIG.
1C, or multiple layers 140, 145, as shown in FIGS. 1B and 1D. In
FIGS. 1C and 1D, the liner 140 is not located on the bottom
horizontal surface of the via 148. The liner 140, 145 is comprised
of a refractory metal such as, for example, Ta, Ti, and W, or a
refractory metal nitride such as TaN, TiN, and WN. An optional
adhesion layer, not specifically shown, can be used to enhance the
bonding of the liner to the second dielectric layer 130.
[0006] A conductive material (not specifically shown) such as Al,
W, Cu or alloys thereof is then deposited so as to completely fill
the aperture providing conductively filled vias and conductively
filled lines.
[0007] One major problem with the prior art interconnect structures
shown in FIGS. 1A-1D is that it is difficult to obtain a good
mechanical contact at normal chip operation temperatures.
Additionally, the prior art interconnect structures oftentimes
exhibit an open circuit or high resistance joint during reliability
testing. Hence, there is a need for providing a new and improved
interconnect structure that avoids the problems mentioned above.
That is, an interconnect structure is needed that has and maintains
good mechanical contact during normal chip operations and does not
fail during various reliability tests such as thermal cycling and
high temperature baking.
SUMMARY OF THE INVENTION
[0008] The present invention provides an interconnect structure
that can be made in the BEOL which exhibits good mechanical contact
during normal chip operations and does not fail during various
reliability tests as compared with the conventional interconnect
structures described above. The inventive interconnect structure
has a kink interface at the bottom of a via that is located within
an interlayer dielectric layer.
[0009] In broad terms, the inventive interconnect structure
comprises;
[0010] a first dielectric layer having at least one metallic
interconnect embedded therein;
[0011] a second dielectric layer located atop said first dielectric
layer, wherein said second dielectric layer has at least one
aperture having an upper line region and a lower via region, said
lower via region includes a kinked interface;
[0012] at least a pair of liners located on at least vertical walls
of said at least one aperture; and
[0013] a conductive material filling said at least one
aperture.
[0014] The term "kinked interface" is used herein to denote the
step shape like interface structure 80 shown in FIGS. 8 and 9.
[0015] The present invention also provides a method for fabricating
the via kinked interface interconnect structure described above.
Specifically, and in broad terms, the method of the present
invention includes the steps of;
[0016] forming a second dielectric layer atop a first dielectric
layer having a metallic interconnect embedded therein;
[0017] forming at least one aperture within said second dielectric
layer that extends to the metallic interconnect in said first
dielectric layer;
[0018] forming a liner material in said at least one aperture;
[0019] partially removing said liner material at a bottom surface
of said at least one aperture to create a kinked interface, while
simultaneously depositing a second liner; and
[0020] forming a conductive material in said at least one aperture
including said kinked interface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] FIGS. 1A-1D are pictorial representations (through cross
sectional views) showing various prior art dual damascene
interconnect structures.
[0022] FIG. 2 is a pictorial representation (through a cross
sectional view) showing a dual damascene structure of the present
invention after forming at least one aperture within the second
dielectric layer.
[0023] FIG. 3 is a pictorial representation (through a cross
sectional view) showing the dual damascene structure of FIG. 2
after forming a liner material within the at least one
aperture.
[0024] FIG. 4 is a pictorial representation (through a cross
sectional view) showing the dual damascene structure of FIG. 3
during a simultaneous etching and deposition process.
[0025] FIG. 5 is a pictorial representation (through a cross
sectional view) showing the dual damascene structure after the
simultaneous etching and deposition process depicted in FIG. 4 has
been performed.
[0026] FIG. 6 is a pictorial representation (through a cross
sectional view) showing the dual damascene structure of FIG. 5
during an optional sputtering process.
[0027] FIG. 7 is a pictorial representation (through a cross
sectional view) showing the dual damascene structure after the
optional sputtering step shown in FIG. 6 has been performed.
[0028] FIG. 8 is an enlarged view of the dual damascene structure
shown in FIG. 6 highlighting the kinked interface formed in the
bottom via surface after filling the at least one aperture with a
conductive material.
[0029] FIG. 9 is an enlarged view of the open-bottom dual damascene
structure shown in FIG. 7 highlighting the kinked interface formed
in the bottom via surface after filling the at least one aperture
with a conductive material.
[0030] FIG. 10 is a pictorial representation (through a cross
sectional view) illustrating an embodiment after repeating the
simultaneous etching and deposition process mentioned in FIG. 4 so
as to deposit three layers of liner within the at least one
aperture.
DETAILED DESCRIPTION OF THE INVENTION
[0031] The present invention, which provides an interconnect
structure having a modified via bottom structure for reliability
enhancement as well as a method of fabricating the same, will now
be described in greater detail by referring to FIGS. 2-10. It is
noted that FIGS. 2-10 are provided for illustrative purposes and
thus they are not drawn to scale.
[0032] Reference is first made to the partial interconnect
structure shown in FIG. 2 which includes a first (or lower)
dielectric layer 100 having a conductive interconnect 110 embedded
within a surface of the first dielectric layer 100 and an optional
patterned cap 120 having an opening that exposes a surface of the
conductive interconnect 110 located on the first dielectric layer
100. The partial interconnect structure shown in FIG. 2 also
includes a second dielectric layer 130 that has an optional
patterned hard mask 122 located on a surface of the second
dielectric layer 130. The second dielectric layer 130 has at least
one aperture that comprises an upper line region 150 and a bottom
via region 148.
[0033] The partial interconnect structure is formed by first
forming the first dielectric layer 100 on a substrate (not shown)
that includes at least one semiconductor device (also not shown).
The at least one semiconductor device includes, for example, a
PFET, NFET or a combination thereof. The first dielectric layer 100
is formed by a deposition process including, for example, chemical
vapor deposition (CVD), plasma enhanced chemical vapor deposition
(PECVD), chemical solution deposition or spin-on coating.
[0034] The first dielectric layer 100 comprises any insulator
(porous or non-porous) that has a dielectric constant k of about
4.0 or less. Illustrative examples of such dielectric materials
having a dielectric constant within the recited range include, but
are not limited to: SiO.sub.2, a thermosetting polyarylene resin,
an organosilicate glass (OSG) such as a carbon doped oxide that
includes atoms of Si, C, O and H, and other like insulators. The
term "polyarylene" is used herein to denote aryl moieties or
inertly substituted aryl moieties which are linked together by
bonds, fused rings, or inert linking groups such as oxygen, sulfur,
sulfone, sulfoxide, carbonyl, etc.
[0035] The thickness of the first dielectric layer 100 can vary
depending upon the type of insulator employed as well as the type
of process used to deposit the same. Typically, the first
dielectric layer 100 has a thickness from about 50 to about 500 nm,
with a thickness from about 100 to about 300 nm being more
typical.
[0036] The metallic interconnect 110, which is embedded within the
first dielectric layer 100, extends perpendicular to the plane of
the paper. The metallic interconnect 110 is comprised of a
conductive metal including, for example, copper (Cu), aluminum
(Al), and tungsten (W), or an alloy containing at least a
conductive metal. In a preferred embodiment, the metallic
interconnect 110 is comprised of Cu.
[0037] The metallic interconnect 110 is formed in the surface of
the first dielectric layer 100 by lithography and etching. The
lithography step includes forming a blanket layer of resist
material (not shown) on the surface of the first dielectric layer
100, exposing the blanket resist material to a pattern of radiation
and developing the pattern into the resist utilizing a conventional
resist developer. The etching step includes any etching process
that selectively removes some of the exposed portion of the
underlying first dielectric layer 100. Illustratively, the etching
used at this point of the present invention includes a dry etching
process such as, for example, reactive-ion etching, ion beam
etching, plasma etching or combinations thereof. The lithography
and etching steps define an opening into the first dielectric layer
100 in which the metallic interconnect 110 will be subsequently
formed.
[0038] Next, a conductive metal such as described above is formed
into the at least one opening using a conventional deposition
process including, but not limited to: CVD, PECVD, sputtering,
chemical solution deposition or plating. A conventional
planarization process such as chemical mechanical polishing (CMP)
or grinding can be employed after depositing the conductive metal.
The planarization process provides a structure in which the metal
interconnect 110 has an upper surface that is substantially
coplanar with the upper surface of the first dielectric layer
100.
[0039] In some embodiments, and when Cu is employed, a cap layer
120 is deposited on the surface of the first dielectric layer 100
after forming the metallic interconnect 110. The optional cap layer
120 comprises a nitride, oxynitride or any combination thereof. The
optional cap layer 120 is formed by a deposition process or by a
thermal nitridation or oxynitridation process. The optional cap
layer 120 typically has a thickness from about 5 to about 90 nm,
with a thickness from about 20 to about 60 nm being more
typical.
[0040] After providing the conductive interconnect 110 into the
first dielectric layer 100 (with or without the cap layer 120), a
second dielectric layer 130 that may comprise the same or different
dielectric material as the first dielectric layer 100 is formed.
The second dielectric layer 130 is formed utilizing one of the
above mentioned deposition processes that was used in forming the
first dielectric layer 100. The thickness of the second dielectric
layer 130 may vary depending on the type of dielectric material
employed as well as the process used in forming the same.
Typically, the second dielectric layer 130 has a thickness from
about 200 to about 900 nm, with a thickness from about 400 to about
700 nm being even more typical.
[0041] An optional hard mask 122 is then formed atop the second
dielectric layer 130. The optional hard mask 122 is typically used
when Cu is to be embedded within the second dielectric layer 130.
The optional hard mask 122 is comprised of the same or different
material as the cap layer 120. The optional hard mask 122 has a
thickness that is within the ranges mentioned above for the cap
layer 120.
[0042] Another resist material (not shown) is then formed atop
either the optional hard mask 122 or the second dielectric layer
130 and then lithography is used to provide a patterned resist
material. The pattern formed at this point is a via pattern. Next,
the via pattern is transferred into the optional hard mask 122, if
present, and thereafter into the second dielectric layer 130. The
patterned resist is typically removed after the optional hard mask
122 has been etched. The via 148 extends to the surface of the
conductive interconnect 110. Hence, if the cap layer 120 is
present, it is etched during this step of the present invention.
The etching step is similar to the etching step described above in
forming the conductive interconnect 110. Specifically, the etching
step selectively etches the hard mask 122, the second dielectric
layer 130 and, if present the cap layer 120 stopping on a surface
of the conductive interconnect 110.
[0043] A yet other resist material is then applied and patterned by
lithography to provide a line pattern which is transferred into the
hard mask 122 and a portion of the second dielectric layer 130
utilizing an etching process. The line pattern is formed into an
upper portion of the second dielectric layer 130. In FIG. 2,
reference numeral 150 denotes the line. It is noted that the line
150 and via 148 form an aperture within the second dielectric 130
that extends to the upper surface of the conductive interconnect
110.
[0044] In some embodiments of the present invention, the line 150
can be formed first and then the via 148 can be formed.
[0045] A first liner 140 is then formed on all exposed surfaces
(vertical and horizontal) within the aperture created above so as
to provide the structure shown in FIG. 3. The first liner 140 is
formed by any deposition process including, but not limited to:
CVD), PECVD, sputtering, chemical solution deposition or plating.
The first liner 140 is comprised of any material that can serve as
a barrier to prevent a conductive material from diffusing there
through. Illustrative examples of such barrier materials include a
refractory metal, such as Ta, Ti, W, Ru, or nitrides thereof e.g.,
TaN, TiN, WN. The first liner 140 may also comprise TiNSi. The
thickness of the first liner 140 is typically from about 5 to about
60 nm, with a thickness from about 10 to about 40 nm being more
typical.
[0046] FIG. 4 shows the structure during simultaneous etching of
the first liner 140 from substantially all horizontal surfaces
within the aperture and deposition of second liner material. In
FIG. 4, reference numeral 50 is used for sputtered ions that are
used to etch the first liner 140 from substantially all of the
horizontal surfaces within the aperture, while reference numeral 75
denotes the metal neutral of the second liner being deposited.
Specifically, the second liner is being deposited with simultaneous
ion bombardment which is used to etch the first liner from
substantially all of the horizontal surfaces within the aperture.
The gas used in ion bombardment includes one of Ar, He, Ne, Xe,
N.sub.2, H.sub.2, NH.sub.3 or N.sub.2H.sub.2. The second liner
formed during the step includes Ta, TaN, Ti, TiN, TiNSi, W, WN, or
Ru.
[0047] Because the field and trench bottom have higher metal
neutral deposition rates than the via bottom 148', a negative
etching rate can be achieved at these areas, while a positive
etching rate is maintained at via bottom 148'. Thus, the gaseous
sputtering partially removes the first deposited liner 140 and the
underlying interconnect 110 from the via bottom, without damaging
the other areas, i.e., field and trench bottom.
[0048] FIG. 5 shows the interconnect structure after the
simultaneous ion etching and metal neutral deposition process
depicted in FIG. 4 has been performed. As shown, the ion
bombardment, i.e., etching, does not completely remove all of the
first liner 140 from the bottom via surface 148. Instead, a portion
of the liner 140 is left on the bottom wall of the via. The
remaining portion of the first liner within the bottom wall of the
via 148 provides a kinked interface 80 within the inventive
structure. FIG. 5 also shows the interconnect structure after
deposition of the second liner 145. The second liner 145 covers the
extensive horizontal surface of the line 150 in order to properly
confine the conductive material to be subsequently formed within
the aperture (e.g., kinked via 148 and line 150). It is possible to
have a small amount of the first liner 140 left at the trench
bottom 150 (not shown). The bottom surface of the now kinked via
148 is shown as being only partially covered with the second liner
145 to illustrate that the complete coverage within this region is
not essential. That is, complete coverage of the kinked via 148 is
not required, i.e., it can be either fully covered with the second
liner 145 or partially covered. Because the deposition rate is
typically higher within the upper liner region 150 than at the
bottom of the via 148, the second liner 145 generally has a better
(thicker) coverage within the line 150 as compared with the via
148.
[0049] FIG. 6 shows an optional second directional ion bombardment
step that can be used to remove the second liner 145 from the
bottom wall of the kinked via 148 so as to provide the structure
shown in FIG. 7. The optional second ion bombardment step thus
provides a structure, see FIG. 7, having an open, yet kinked, via
bottom. Because the second liner 145 typically has a higher
resistivity than the conductive material to be subsequently
deposited within the aperture (via 148 and line 150) and impurities
may be deposited in the via bottom, which both increase electrical
resistance of the joint, it is preferred to employ this optional
second ion bombardment step.
[0050] The optional second ion bombardment step is performed
utilizing one of the gases mentioned above and the conditions for
the optional step include 5 to 30 nm silicon oxide equivalent
removal thickness.
[0051] Next, and as shown in FIGS. 8 and 9, a conductive material
is deposited within the aperture to completely fill the kinked via
148 and the line 150. The conductive material is denoted by
reference numeral 170 in these drawings. The conductive material
170 comprises polySi, a conductive metal, an alloy comprising at
least one conductive metal, a conductive metal silicide or
combinations thereof. Preferably, the conductive material 170 is a
conductive metal such as Cu, W, or Al. In one highly preferred
embodiment, the conductive material 170 is comprised of Cu. The
conductive material 170 is formed within the aperture utilizing a
conventional deposition process including, but not limited to: CVD,
PECVD, sputtering, chemical solution deposition or plating. After
deposition, a planarization process can be employed such that the
upper surface of the conductive material 170 is substantially
coplanar with either the upper surface of the second dielectric
layer 130 or, if present, the upper surface of the optional hard
mask 122. Note that FIGS. 8 and 9 are enlarged views emphasizing
the kinked via 148 therefore the upper region of the interconnect
structure is not shown.
[0052] FIG. 10 shows a resultant structure after repeating the
process shown in FIG. 4 twice. In this embodiment, three liners
140, 145 and 147 are present in the interconnect structure. Note
that kinked interfaces are formed at the bottom of the via
including liners 140 and 145. Liner 147 is comprised of the same or
different material as liner 145. It is noted that the present
invention is not limited to just repeating the simultaneous etching
and metal neutral deposition process twice, instead this step can
be repeated any number of times. The limitation of repeating the
etching and deposition step is, however, limited to the width of
the kinked via 148.
[0053] It should be noted that in the above drawings only a single
interconnect 110 and a single aperture are shown. Despite showing
the presence of a single interconnect 110 and a single aperture,
the present invention contemplates forming numerous interconnect
and apertures within an interconnect structure. Moreover, it is
also contemplated to form addition dielectrics containing embedded
conductive material atop the structures depicted in FIGS. 8 and 9
to provide multilevel interconnect structures.
[0054] While the present invention has been particularly shown and
described with respect to preferred embodiments thereof, it will be
understood by those skilled in the art that the foregoing and other
changes in forms and details may be made without departing from the
spirit and scope of the present invention. It is therefore intended
that the present invention is not limited to the exact forms and
details described and illustrated, but fall within the scope of the
appended claims.
* * * * *