U.S. patent application number 16/725226 was filed with the patent office on 2020-07-02 for methods for forming films containing silicon boron with low leakage current.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Rui CHENG, Zubin HUANG, Karthik JANAKIRAMAN, Sanjay KAMATH, Diwakar N. KEDLAYA, Honggun KIM, Euhngi LEE, Deenesh PADHI, Chuanxi YANG, Hang YU.
Application Number | 20200211834 16/725226 |
Document ID | / |
Family ID | 71123105 |
Filed Date | 2020-07-02 |
United States Patent
Application |
20200211834 |
Kind Code |
A1 |
YANG; Chuanxi ; et
al. |
July 2, 2020 |
METHODS FOR FORMING FILMS CONTAINING SILICON BORON WITH LOW LEAKAGE
CURRENT
Abstract
Methods for forming the silicon boron nitride layer are
provided. The method includes positioning a substrate on a pedestal
in a process region within a process chamber, heating a pedestal
retaining the substrate, and introducing a first flow of a first
process gas and a second flow of a second process gas to the
process region. The first flow of the first process gas contains
silane, ammonia, helium, nitrogen, argon, and hydrogen. The second
flow of the second process gas contains diborane and hydrogen. The
method also includes forming a plasma concurrently with the first
flow of the first process gas and the second flow of the second
process gas to the process region and exposing the substrate to the
first process gas, the second process gas, and the plasma to
deposit the silicon boron nitride layer on the substrate.
Inventors: |
YANG; Chuanxi; (Los Altos,
CA) ; YU; Hang; (Woodland, CA) ; KAMATH;
Sanjay; (Fremont, CA) ; PADHI; Deenesh;
(Sunnyvale, CA) ; KIM; Honggun; (San Jose, CA)
; LEE; Euhngi; (Santa Clara, CA) ; HUANG;
Zubin; (Santa Clara, CA) ; KEDLAYA; Diwakar N.;
(San Jose, CA) ; CHENG; Rui; (Santa Clara, CA)
; JANAKIRAMAN; Karthik; (San Jose, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Family ID: |
71123105 |
Appl. No.: |
16/725226 |
Filed: |
December 23, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62787666 |
Jan 2, 2019 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C 16/513 20130101;
H01L 21/0217 20130101; C23C 16/0209 20130101; H01L 21/02274
20130101; H01L 21/67 20130101; C23C 16/345 20130101 |
International
Class: |
H01L 21/02 20060101
H01L021/02; C23C 16/34 20060101 C23C016/34; C23C 16/02 20060101
C23C016/02; C23C 16/513 20060101 C23C016/513 |
Claims
1. A method of forming a silicon boron nitride layer, comprising:
positioning a substrate on a pedestal in a process region within a
process chamber; heating a pedestal retaining the substrate to a
deposition temperature of about 225.degree. C. to about 575.degree.
C.; introducing a first flow of a first process gas and a second
flow of a second process gas to the process region, wherein: the
first flow of the first process gas comprises: silane having a flow
rate of about 1 sccm to about 500 sccm, ammonia having a flow rate
of about 10 sccm to about 5,000 sccm, helium having a flow rate of
about 500 sccm to about 20,000 sccm, nitrogen (N.sub.2) having a
flow rate of about 5,000 sccm to about 25,000 sccm, argon having a
flow rate of about 50 sccm to about 10,000 sccm, and hydrogen
(H.sub.2) having a flow rate of about 50 sccm to about 20,000 sccm,
and the second flow of the second process gas comprises: about 2
molar percent (mol %) to about 15 mol % of diborane, about 85 mol %
to about 98 mol % of hydrogen (H.sub.2), and a flow rate of about 1
sccm to about 5,000 sccm; forming a plasma concurrently with the
first flow of the first process gas and the second flow of the
second process gas to the process region; and exposing the
substrate to the first process gas, the second process gas, and the
plasma to deposit the silicon boron nitride layer on the
substrate.
2. The method of claim 1, wherein the silicon boron nitride layer
comprises about 10 atomic percent (at %) to about 50 at % of
boron.
3. The method of claim 1, wherein the silicon boron nitride layer
has a nitrogen to silicon atomic ratio of about 1.05 to about
1.5.
4. The method of claim 1, wherein the silicon boron nitride layer
comprises about 5 at % to about 15 at % of hydrogen.
5. The method of claim 1, wherein the silicon boron nitride layer
has a leakage current of less than 1.times.10.sup.-9 A/cm.sup.2 at
1.5 MV/cm.
6. The method of claim 1, wherein the silicon boron nitride layer
comprises: about 60 at % to about 80 at % of boron bonded to
silicon; and about 20 at % to about 40 at % of boron bonded to
nitrogen.
7. The method of claim 1, wherein the deposition temperature is
about 350.degree. C. to about 560.degree. C.
8. The method of claim 1, wherein the first flow of the first
process gas and the second flow of the second process gas are
combined to produce a third flow of a third process gas prior to
being introduced into the process region.
9. The method of claim 8, wherein the third flow of the third
process gas is maintained at a temperature of about 20.degree. C.
to less than 165.degree. C.
10. The method of claim 1, wherein the first flow of the first
process gas comprises: the silane having a flow rate of about 10
sccm to about 250 sccm, the ammonia having a flow rate of about 50
sccm to about 2,000 sccm, the helium having a flow rate of about
750 sccm to about 15,000 sccm, the nitrogen having a flow rate of
about 10,000 sccm to about 20,000 sccm, the argon having a flow
rate of about 200 sccm to about 7,500 sccm, and the hydrogen having
a flow rate of about 200 sccm to about 15,000 sccm.
11. The method of claim 1, wherein the second flow of the second
process gas comprises: about 3 mol % to about 12 mol % of the
diborane, about 88 mol % to about 97 mol % of the hydrogen, and a
flow rate of about 5 sccm to about 2,000 sccm.
12. The method of claim 1, further comprising maintaining the
process region at a pressure of about 2 Torr to about 8 Torr.
13. The method of claim 1, wherein the pedestal is positioned at a
process distance between the pedestal and a showerhead of the
process chamber, and wherein the process distance is about 200 mil
to about 1,000 mil.
14. The method of claim 1, wherein the silicon boron nitride layer
is located in a capacitor device disposed on the substrate.
15. The method of claim 14, wherein the silicon boron nitride layer
is a supporter layer or a stopper layer of the capacitor
device.
16. The method of claim 1, wherein the silicon boron nitride layer
has a thickness of about 50 .ANG. to about 800 .ANG..
17. The method of claim 1, further comprising: generating the
plasma in a remote plasma system disposed outside of the process
chamber; and transferring the plasma into the process region while
depositing the silicon boron nitride layer on the substrate.
18. A method of forming a silicon boron nitride layer, comprising:
positioning a substrate on a pedestal in a process region within a
process chamber; introducing a first flow of a first process gas
and a second flow of a second process gas to the process region,
wherein: the first flow of the first process gas comprises a
silicon-containing precursor, a nitrogen-containing precursor,
hydrogen (H.sub.2), and at least two gases selected from the group
consisting of argon, helium, nitrogen (N.sub.2), and any
combination thereof, and the second flow of the second process gas
comprises: about 2 molar percent (mol %) to about 15 mol % of
diborane, about 85 mol % to about 98 mol % of hydrogen (H.sub.2),
and a flow rate of about 1 sccm to about 5,000 sccm; forming a
plasma concurrently with the first flow of the first process gas
and the second flow of the second process gas to the process
region; and exposing the substrate to the first process gas, the
second process gas, and the plasma to deposit the silicon boron
nitride layer on the substrate, wherein the silicon boron nitride
layer comprises about 10 atomic percent (at %) to about 50 at % of
boron, wherein the silicon boron nitride layer has a nitrogen to
silicon atomic ratio of about 1.05 to about 1.5, and wherein the
silicon boron nitride layer has a leakage current of less than
1.times.10.sup.-9 A/cm.sup.2 at 1.5 MV/cm.
19. The method of claim 18, wherein the silicon boron nitride layer
comprises about 20 at % to about 35 at % of boron, wherein the
silicon boron nitride layer has a nitrogen to silicon atomic ratio
of about 1.1 to about 1.4, and wherein the silicon boron nitride
layer has a leakage current of about 5.times.10.sup.-11 A/cm.sup.2
to about 9.9.times.10.sup.-10 A/cm.sup.2 at 1.5 MV/cm.
20. A method of forming a silicon boron nitride layer, comprising:
positioning a substrate on a pedestal in a process region within a
process chamber; heating a pedestal retaining the substrate to a
deposition temperature of about 225.degree. C. to about 575.degree.
C.; maintaining the process region at a pressure of about 2 Torr to
about 8 Torr; introducing a first flow of a first process gas to
the process region, wherein the first flow of the first process gas
comprises: silane having a flow rate of about 1 sccm to about 500
sccm, ammonia having a flow rate of about 10 sccm to about 5,000
sccm, helium having a flow rate of about 500 sccm to about 20,000
sccm, nitrogen (N.sub.2) having a flow rate of about 5,000 sccm to
about 25,000 sccm, argon having a flow rate of about 50 sccm to
about 10,000 sccm, and hydrogen (H.sub.2) having a flow rate of
about 50 sccm to about 20,000 sccm; discontinuing the first flow of
the first process gases; forming a plasma concurrently with a
second flow of a second process gas to the process region, wherein
the second flow of the second process gas has a flow rate of about
1 sccm to about 5,000 sccm and comprises about 2 molar percent (mol
%) to about 15 mol % of diborane and about 85 mol % to about 98 mol
% of hydrogen (H.sub.2); and forming the silicon boron nitride
layer on the substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. Appl. No.
62/787,666, filed on Jan. 2, 2019, which herein is incorporated by
reference.
BACKGROUND
Field
[0002] Embodiments of the present disclosure generally relate to
deposition processes, and more specifically relate to methods for
forming films containing silicon boron nitride (SiBN).
Description of the Related Art
[0003] In semiconductor manufacturing, various devices may be
formed. Such devices include dynamic random-access memory (DRAM)
devices having silicon and nitrogen containing stopper and
supporter layers. For many DRAM devices, there is a need to fill
the silicon and nitrogen containing layer to also contain boron.
However, silicon boron nitride containing layers generally have
unfavorable thermal budgets and high leakage current values. The
high thermal budget increases boron diffusion during additional
DRAM device forming processes, such as wet etching, causing
deformation and the high leakage current results in results in
electrical short circuiting between the capacitors of DRAM
devices.
[0004] Therefore, there is a need for improved silicon boron
nitride layers and methods for forming silicon boron nitride layers
having a relatively high boron concentration and a relatively low
leakage current.
SUMMARY
[0005] Embodiments of the present disclosure generally relate to
improved silicon boron nitride layers and methods for forming
silicon boron nitride layers having a relatively high boron
concentration and a relatively low leakage current. In some
examples, the silicon boron nitride layer is a supporter layer
and/or a stopper layer within a capacitor or other electronic
device.
[0006] In one or more embodiments, a method for forming a silicon
boron nitride layer is provided and includes positioning a
substrate on a pedestal in a process region within a process
chamber, heating a pedestal retaining the substrate to a deposition
temperature of about 225.degree. C. to about 575.degree. C., and
introducing a first flow of a first process gas and a second flow
of a second process gas to the process region. The first flow of
the first process gas contains silane having a flow rate of about 1
sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm
to about 5,000 sccm, helium having a flow rate of about 500 sccm to
about 20,000 sccm, nitrogen (N.sub.2) having a flow rate of about
5,000 sccm to about 25,000 sccm, argon having a flow rate of about
50 sccm to about 10,000 sccm, and hydrogen (H.sub.2) having a flow
rate of about 50 sccm to about 20,000 sccm. The second flow of the
second process gas contains about 2 molar percent (mol %) to about
15 mol % of diborane, about 85 mol % to about 98 mol % of hydrogen,
and a flow rate of about 1 sccm to about 5,000 sccm. The method
also includes forming a plasma concurrently with the first flow of
the first process gas and the second flow of the second process gas
to the process region and exposing the substrate to the first
process gas, the second process gas, and the plasma to deposit the
silicon boron nitride layer on the substrate.
[0007] In other embodiments, a method for forming a silicon boron
nitride layer is provided and includes positioning a substrate on a
pedestal in a process region within a process chamber and
introducing a first flow of a first process gas and a second flow
of a second process gas to the process region. The first flow of
the first process gas contains a silicon-containing precursor, a
nitrogen-containing precursor, hydrogen, and at least two gases
selected from the group consisting of argon, helium, nitrogen, and
any combination thereof. The second flow of the second process gas
contains about 2 mol % to about 15 mol % of diborane, about 85 mol
% to about 98 mol % of hydrogen, and a flow rate of about 1 sccm to
about 5,000 sccm. The method also includes forming a plasma
concurrently with the first flow of the first process gas and the
second flow of the second process gas to the process region and
exposing the substrate to the first process gas, the second process
gas, and the plasma to deposit the silicon boron nitride layer on
the substrate. The silicon boron nitride layer contains about 10
atomic percent (at %) to about 50 at % of boron, has a nitrogen to
silicon atomic ratio of about 1.05 to about 1.5, and has a leakage
current of less than 1.times.10.sup.-9 A/cm.sup.2 at 1.5 MV/cm.
[0008] In some embodiments, a method for forming a silicon boron
nitride layer is provided and includes positioning a substrate on a
pedestal in a process region within a process chamber, heating a
pedestal retaining the substrate to a deposition temperature of
about 225.degree. C. to about 575.degree. C., maintaining the
process region at a pressure of about 2 Torr to about 8 Torr, and
introducing a first flow of a first process gas to the process
region. The first flow of the first process gas contains silane
having a flow rate of about 1 sccm to about 500 sccm, ammonia
having a flow rate of about 10 sccm to about 5,000 sccm, helium
having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen
having a flow rate of about 5,000 sccm to about 25,000 sccm, argon
having a flow rate of about 50 sccm to about 10,000 sccm, and
hydrogen having a flow rate of about 50 sccm to about 20,000 sccm.
The method further includes discontinuing the first flow of the
first process gases, forming a plasma concurrently with a second
flow of a second process gas to the process region, and forming the
silicon boron nitride layer on the substrate. The second flow of
the second process gas has a flow rate of about 1 sccm to about
5,000 sccm and contains about 2 mol % to about 15 mol % of diborane
and about 85 mol % to about 98 mol % of hydrogen.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] So that the manner in which the above recited features of
the present disclosure can be understood in detail, a more
particular description of the disclosure, briefly summarized above,
may be had by reference to embodiments, some of which are
illustrated in the appended drawings. It is to be noted, however,
that the appended drawings illustrate only exemplary embodiments
and are therefore not to be considered limiting of its scope, and
may admit to other equally effective embodiments.
[0010] FIG. 1 depicts a schematic cross-sectional view of a process
chamber, according to one or more embodiments described and
discussed herein.
[0011] FIG. 2 depicts a schematic cross-sectional view of another
process chamber, according to one or more embodiments described and
discussed herein.
[0012] FIG. 3 is a flow diagram of a method of forming a silicon
boron nitride layer, according to one or more embodiments described
and discussed herein.
[0013] FIG. 4 depicts a capacitor device containing silicon boron
nitride layers which can be deposited or otherwise produced by
methods according to one or more embodiments described and
discussed herein.
[0014] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
and features of one embodiment may be beneficially incorporated in
other embodiments without further recitation.
DETAILED DESCRIPTION
[0015] Embodiments of the present disclosure generally relate to
improved silicon boron nitride layers and methods for forming
silicon boron nitride layers. These silicon boron nitride materials
and layers have relatively high boron concentrations and low
leakage currents, as well as other properties which are applicable
for use in electronic devices, such as capacitors. For example, the
silicon boron nitride layers described and discussed here can be
used as supporter layers and/or stopper layers within a capacitor
or other electronic device. The silicon boron nitride layer can
have a boron concentration of about 10 atomic percent (at %) to
about 50 at %, such as about 20 at % to about 40 at % and a leakage
current of less than 1.times.10.sup.-9 A/cm.sup.2 at 1.5 MV/cm.
[0016] In one or more embodiments, methods for forming the silicon
boron nitride layer includes positioning the substrate on a
pedestal in a process region within a process chamber, heating a
pedestal retaining the substrate to a deposition temperature, and
introducing a first flow of a first process gas and a second flow
of a second process gas to the process region. In some embodiments,
a plasma is concurrently ignited or otherwise formed with the first
flow of the first process gas and the second flow of the second
process gas to the process region. The plasma can be generated
remotely of the process chamber or in-situ the process chamber. The
substrate is exposed to the first process gas, the second process
gas, and the plasma to deposit the silicon boron nitride layer on
the substrate during a plasma enhanced chemical vapor deposition
(PE-CVD) process.
[0017] The pedestal retaining the substrate disposed thereon is
heated to a deposition temperature of about 225.degree. C., about
250.degree. C., about 300.degree. C., about 350.degree. C., about
400.degree. C., or about 450.degree. C. to about 475.degree. C.,
about 500.degree. C., about 525.degree. C., about 550.degree. C.,
about 560.degree. C., about 570.degree. C., about 575.degree. C.,
about 580.degree. C., or about 600.degree. C. during the PE-CVD
process. For example, the substrate is heated to a deposition
temperature of about 225.degree. C. to about 600.degree. C., about
225.degree. C. to about 575.degree. C., about 225.degree. C. to
about 560.degree. C., about 225.degree. C. to about 550.degree. C.,
about 225.degree. C. to about 500.degree. C., about 225.degree. C.
to about 450.degree. C., about 225.degree. C. to about 400.degree.
C., about 225.degree. C. to about 350.degree. C., about 225.degree.
C. to about 300.degree. C., about 350.degree. C. to about
600.degree. C., about 350.degree. C. to about 575.degree. C., about
350.degree. C. to about 560.degree. C., about 350.degree. C. to
about 550.degree. C., about 350.degree. C. to about 500.degree. C.,
about 350.degree. C. to about 450.degree. C., about 350.degree. C.
to about 400.degree. C., about 350.degree. C. to about 375.degree.
C., about 450.degree. C. to about 600.degree. C., about 450.degree.
C. to about 575.degree. C., about 450.degree. C. to about
560.degree. C., about 450.degree. C. to about 550.degree. C., about
450.degree. C. to about 500.degree. C., or about 450.degree. C. to
about 475.degree. C.
[0018] The process region is maintained at a pressure of less than
100 Torr, less than 50 Torr, less than 20 Torr, or less than 10
Torr during the PE-CVD process. The process region is maintained at
a pressure of about 0.5 Torr, about 1 Torr, about 2 Torr, about 3
Torr, or about 4 Torr to about 5 Torr, about 6 Torr, about 7 Torr,
about 8 Torr, or about 9 Torr. For example, the process region is
maintained at a pressure of about 0.5 Torr to less than 10 Torr,
about 2 Torr to less than 10 Torr, about 2 Torr to about 8 Torr,
about 2 Torr to about 6 Torr, about 2 Torr to about 5 Torr, about 2
Torr to about 4 Torr, about 3 Torr to less than 10 Torr, about 3
Torr to about 8 Torr, about 3 Torr to about 6 Torr, about 3 Torr to
about 5 Torr, about 3 Torr to about 4 Torr, about 4 Torr to less
than 10 Torr, about 4 Torr to about 8 Torr, about 4 Torr to about 6
Torr, or about 4 Torr to about 5 Torr.
[0019] The pedestal is positioned at a process distance which is
the distance between the pedestal and the showerhead within the
process chamber during the PE-CVD process. The process distance is
about 100 mil (about 2.5 millimeter (mm)), about 200 mil (about 5
mm), about 300 mil (about 7.5 mm), or about 400 mil (about 10 mm)
to about 500 mil (about 12.5 mm), about 600 mil (about 15 mm),
about 800 mil (about 20 mm), about 1,000 mil (about 25.4 mm), about
2,000 mil (about 50.8 mm), or about 5,000 mil (about 127 mm). For
example, the process distance is about 100 mil to about 5,000 mil,
about 100 mil to about 2,000 mil, about 100 mil to about 1,000 mil,
about 100 mil to about 800 mil, about 100 mil to about 600 mil,
about 100 mil to about 500 mil, about 100 mil to about 400 mil,
about 100 mil to about 300 mil, about 300 mil to about 2,000 mil,
about 300 mil to about 1,000 mil, about 300 mil to about 800 mil,
about 300 mil to about 600 mil, about 300 mil to about 500 mil, or
about 300 mil to about 400 mil.
[0020] The first flow of the first process gas contains one or more
silicon-containing precursors, one or more nitrogen-containing
precursors, hydrogen (H.sub.2), and at least two process or carrier
gases, selected from argon, helium, nitrogen (N.sub.2), or any
combination thereof. Exemplary silicon-containing precursors can be
or include silane, disilane, trisilane, tetrasilane, or any
combination thereof. Exemplary nitrogen-containing precursors can
be or include ammonia, hydrazine, one or more alkylamines (e.g.,
dimethylamine), or any combination thereof. In one or more
examples, the first process gas contains silane, ammonia, hydrogen
(H.sub.2), argon, helium, and nitrogen (N.sub.2).
[0021] The first flow of the first process gas contains a
silicon-containing precursor (e.g., silane) having a flow rate of
about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 30
sccm, or about 50 sccm to about 80 sccm, about 100 sccm, about 150
sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 400
sccm, about 500 sccm, about 800 sccm, about 1,000 sccm, about 1,500
sccm, or about 2,000 sccm. For example, the first flow of the first
process gas contains a silicon-containing precursor (e.g., silane)
having a flow rate of about 1 sccm to about 2,000 sccm, about 1
sccm to about 1,000 sccm, about 1 sccm to about 500 sccm, about 1
sccm to about 250 sccm, about 1 sccm to about 100 sccm, about 1
sccm to about 50 sccm, about 10 sccm to about 2,000 sccm, about 10
sccm to about 1,000 sccm, about 10 sccm to about 500 sccm, about 10
sccm to about 250 sccm, about 10 sccm to about 100 sccm, about 10
sccm to about 50 sccm, about 20 sccm to about 2,000 sccm, about 20
sccm to about 1,000 sccm, about 20 sccm to about 500 sccm, about 20
sccm to about 250 sccm, about 20 sccm to about 100 sccm, or about
20 sccm to about 50 sccm.
[0022] The first flow of the first process gas contains a
nitrogen-containing precursor (e.g., ammonia) having a flow rate of
about 1 sccm, about 10 sccm, about 50 sccm, about 80 sccm, about
100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300
sccm, about 500 sccm, or about 800 sccm to about 1,000 sccm, about
1,500 sccm, about 2,000 sccm, about 2,500 sccm, about 3,000 sccm,
about 4,000 sccm, about 5,000 sccm, about 7,000 sccm, about 8,500
sccm, or about 10,000 sccm. For example, the first flow of the
first process gas contains a nitrogen-containing precursor (e.g.,
ammonia) having a flow rate of about 1 sccm to about 10,000 sccm,
about 10 sccm to about 10,000 sccm, about 10 sccm to about 5,000
sccm, about 10 sccm to about 4,000 sccm, about 10 sccm to about
3,000 sccm, about 10 sccm to about 2,000 sccm, about 10 sccm to
about 1,500 sccm, about 10 sccm to about 1,000 sccm, about 10 sccm
to about 800 sccm, about 10 sccm to about 500 sccm, about 10 sccm
to about 300 sccm, about 50 sccm to about 10,000 sccm, about 50
sccm to about 5,000 sccm, about 50 sccm to about 4,000 sccm, about
50 sccm to about 3,000 sccm, about 50 sccm to about 2,000 sccm,
about 50 sccm to about 1,500 sccm, about 50 sccm to about 1,000
sccm, about 50 sccm to about 800 sccm, about 50 sccm to about 500
sccm, about 50 sccm to about 300 sccm, about 100 sccm to about
10,000 sccm, about 100 sccm to about 5,000 sccm, about 100 sccm to
about 4,000 sccm, about 100 sccm to about 3,000 sccm, about 100
sccm to about 2,000 sccm, about 100 sccm to about 1,500 sccm, about
100 sccm to about 1,000 sccm, about 100 sccm to about 800 sccm,
about 100 sccm to about 500 sccm, or about 100 sccm to about 300
sccm.
[0023] The first flow of the first process gas contains helium
having a flow rate of about 100 sccm, about 500 sccm, about 750
sccm, or about 1,000 sccm to about 1,500 sccm, about 2,000 sccm,
about 5,000 sccm, about 8,000 sccm, about 10,000 sccm, about 15,000
sccm, about 20,000 sccm, about 30,000 sccm, about 40,000 sccm, or
about 50,000 sccm. For example, the first flow of the first process
gas contains helium having a flow rate of about 100 sccm to about
50,000 sccm, about 500 sccm to about 50,000 sccm, about 500 sccm to
about 40,000 sccm, about 500 sccm to about 20,000 sccm, about 500
sccm to about 15,000 sccm, about 500 sccm to about 12,000 sccm,
about 500 sccm to about 10,000 sccm, about 500 sccm to about 8,000
sccm, about 500 sccm to about 5,000 sccm, about 500 sccm to about
1,000 sccm, about 750 sccm to about 50,000 sccm, about 750 sccm to
about 40,000 sccm, about 750 sccm to about 20,000 sccm, about 750
sccm to about 15,000 sccm, about 750 sccm to about 12,000 sccm,
about 750 sccm to about 10,000 sccm, about 750 sccm to about 8,000
sccm, about 750 sccm to about 5,000 sccm, about 750 sccm to about
1,000 sccm, about 1,000 sccm to about 50,000 sccm, about 1,000 sccm
to about 40,000 sccm, about 1,000 sccm to about 20,000 sccm, about
1,000 sccm to about 15,000 sccm, about 1,000 sccm to about 12,000
sccm, about 1,000 sccm to about 10,000 sccm, about 1,000 sccm to
about 8,000 sccm, about 1,000 sccm to about 5,000 sccm, about 1,000
sccm to about 3,000 sccm, about 5,000 sccm to about 50,000 sccm,
about 5,000 sccm to about 40,000 sccm, about 5,000 sccm to about
30,000 sccm, about 5,000 sccm to about 22,000 sccm, about 5,000
sccm to about 20,000 sccm, about 5,000 sccm to about 18,000 sccm,
about 5,000 sccm to about 15,000 sccm, about 5,000 sccm to about
12,000 sccm, about 5,000 sccm to about 10,000 sccm, or about 5,000
sccm to about 8,000 sccm.
[0024] The first flow of the first process gas contains nitrogen
(N.sub.2) having a flow rate of about 100 sccm, about 500 sccm,
about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,500
sccm, about 5,000 sccm, about 8,000 sccm, about 10,000 sccm, about
12,000 sccm, or about 15,000 sccm to about 18,000 sccm, about
20,000 sccm, about 22,000 sccm, about 25,000 sccm, about 30,000
sccm, about 35,000 sccm, about 40,000 sccm, or about 50,000 sccm.
For example, the first flow of the first process gas contains
nitrogen having a flow rate of about 100 sccm to about 50,000 sccm,
about 500 sccm to about 50,000 sccm, about 500 sccm to about 40,000
sccm, about 500 sccm to about 20,000 sccm, about 500 sccm to about
15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to
about 10,000 sccm, about 500 sccm to about 8,000 sccm, about 500
sccm to about 5,000 sccm, about 500 sccm to about 1,000 sccm, about
1,000 sccm to about 50,000 sccm, about 1,000 sccm to about 40,000
sccm, about 1,000 sccm to about 30,000 sccm, about 1,000 sccm to
about 25,000 sccm, about 1,000 sccm to about 22,000 sccm, about
1,000 sccm to about 20,000 sccm, about 1,000 sccm to about 15,000
sccm, about 1,000 sccm to about 12,000 sccm, about 1,000 sccm to
about 10,000 sccm, about 1,000 sccm to about 8,000 sccm, about
1,000 sccm to about 5,000 sccm, about 1,000 sccm to about 3,000
sccm, about 5,000 sccm to about 50,000 sccm, about 5,000 sccm to
about 40,000 sccm, about 5,000 sccm to about 30,000 sccm, about
5,000 sccm to about 25,000 sccm, about 5,000 sccm to about 22,000
sccm, about 5,000 sccm to about 20,000 sccm, about 5,000 sccm to
about 18,000 sccm, about 5,000 sccm to about 15,000 sccm, about
5,000 sccm to about 12,000 sccm, about 5,000 sccm to about 10,000
sccm, about 5,000 sccm to about 8,000 sccm, about 10,000 sccm to
about 50,000 sccm, about 10,000 sccm to about 40,000 sccm, about
10,000 sccm to about 30,000 sccm, about 10,000 sccm to about 25,000
sccm, about 10,000 sccm to about 22,000 sccm, about 10,000 sccm to
about 20,000 sccm, about 10,000 sccm to about 18,000 sccm, about
10,000 sccm to about 15,000 sccm, about 10,000 sccm to about 12,000
sccm, about 12,000 sccm to about 50,000 sccm, about 12,000 sccm to
about 40,000 sccm, about 12,000 sccm to about 30,000 sccm, about
12,000 sccm to about 25,000 sccm, about 12,000 sccm to about 22,000
sccm, about 12,000 sccm to about 20,000 sccm, about 12,000 sccm to
about 18,000 sccm, or about 12,000 sccm to about 15,000 sccm.
[0025] The first flow of the first process gas contains argon
having a flow rate of about 50 sccm, about 100 sccm, about 200
sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1,000
sccm, about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about
4,000 sccm, or about 5,000 sccm to about 6,000 sccm, about 7,500
sccm, about 8,000 sccm, about 10,000 sccm, about 12,000 sccm, about
15,000 sccm, about 20,000 sccm, about 30,000 sccm, about 40,000
sccm, or about 50,000 sccm. For example, the first flow of the
first process gas contains argon having a flow rate of about 50
sccm to about 50,000 sccm, about 50 sccm to about 30,000 sccm,
about 50 sccm to about 25,000 sccm, about 50 sccm to about 20,000
sccm, about 50 sccm to about 15,000 sccm, about 50 sccm to about
12,000 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to
about 7,500 sccm, about 50 sccm to about 6,000 sccm, about 50 sccm
to about 5,000 sccm, about 50 sccm to about 3,000 sccm, about 50
sccm to about 1,000 sccm, about 200 sccm to about 50,000 sccm,
about 200 sccm to about 30,000 sccm, about 200 sccm to about 25,000
sccm, about 200 sccm to about 20,000 sccm, about 200 sccm to about
15,000 sccm, about 200 sccm to about 12,000 sccm, about 200 sccm to
about 10,000 sccm, about 200 sccm to about 7,500 sccm, about 200
sccm to about 6,000 sccm, about 200 sccm to about 5,000 sccm, about
200 sccm to about 3,000 sccm, about 200 sccm to about 1,000 sccm,
about 500 sccm to about 50,000 sccm, about 500 sccm to about 30,000
sccm, about 500 sccm to about 25,000 sccm, about 500 sccm to about
20,000 sccm, about 500 sccm to about 15,000 sccm, about 500 sccm to
about 12,000 sccm, about 500 sccm to about 10,000 sccm, about 500
sccm to about 7,500 sccm, about 500 sccm to about 6,000 sccm, about
500 sccm to about 5,000 sccm, about 500 sccm to about 3,000 sccm,
or about 500 sccm to about 1,000 sccm.
[0026] The first flow of the first process gas contains hydrogen
(H.sub.2) having a flow rate of about 50 sccm, about 100 sccm,
about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm,
about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,000
sccm, about 4,000 sccm, or about 5,000 sccm to about 6,000 sccm,
about 7,500 sccm, about 8,000 sccm, about 10,000 sccm, about 12,000
sccm, about 15,000 sccm, about 20,000 sccm, about 30,000 sccm,
about 40,000 sccm, or about 50,000 sccm. For example, the first
flow of the first process gas contains hydrogen having a flow rate
of about 50 sccm to about 50,000 sccm, about 50 sccm to about
30,000 sccm, about 50 sccm to about 25,000 sccm, about 50 sccm to
about 20,000 sccm, about 50 sccm to about 15,000 sccm, about 50
sccm to about 12,000 sccm, about 50 sccm to about 10,000 sccm,
about 50 sccm to about 7,500 sccm, about 50 sccm to about 6,000
sccm, about 50 sccm to about 5,000 sccm, about 50 sccm to about
3,000 sccm, about 50 sccm to about 1,000 sccm, about 200 sccm to
about 50,000 sccm, about 200 sccm to about 30,000 sccm, about 200
sccm to about 25,000 sccm, about 200 sccm to about 20,000 sccm,
about 200 sccm to about 15,000 sccm, about 200 sccm to about 12,000
sccm, about 200 sccm to about 10,000 sccm, about 200 sccm to about
7,500 sccm, about 200 sccm to about 6,000 sccm, about 200 sccm to
about 5,000 sccm, about 200 sccm to about 3,000 sccm, about 200
sccm to about 1,000 sccm, about 500 sccm to about 50,000 sccm,
about 500 sccm to about 30,000 sccm, about 500 sccm to about 25,000
sccm, about 500 sccm to about 20,000 sccm, about 500 sccm to about
15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to
about 10,000 sccm, about 500 sccm to about 7,500 sccm, about 500
sccm to about 6,000 sccm, about 500 sccm to about 5,000 sccm, about
500 sccm to about 3,000 sccm, or about 500 sccm to about 1,000
sccm.
[0027] In one or more examples, the first flow of the first process
gas contains silane having a flow rate of about 1 sccm to about 500
sccm, ammonia having a flow rate of about 10 sccm to about 5,000
sccm, helium having a flow rate of about 500 sccm to about 20,000
sccm, nitrogen (N.sub.2) having a flow rate of about 5,000 sccm to
about 25,000 sccm, argon having a flow rate of about 50 sccm to
about 10,000 sccm, and hydrogen (H.sub.2) having a flow rate of
about 50 sccm to about 20,000 sccm. In other examples, the first
flow of the first process gas contains the silane having a flow
rate of about 10 sccm to about 250 sccm, the ammonia having a flow
rate of about 50 sccm to about 2,000 sccm, the helium having a flow
rate of about 750 sccm to about 15,000 sccm, the nitrogen having a
flow rate of about 10,000 sccm to about 20,000 sccm, the argon
having a flow rate of about 200 sccm to about 7,500 sccm, and the
hydrogen having a flow rate of about 200 sccm to about 15,000 sccm.
In some examples, the first flow of the first process gas contains
the silane having a flow rate of about 20 sccm to about 100 sccm,
the ammonia having a flow rate of about 100 sccm to about 1,000
sccm, the helium having a flow rate of about 1,000 sccm to about
10,000 sccm, the nitrogen having a flow rate of about 12,000 sccm
to about 18,000 sccm, the argon having a flow rate of about 500
sccm to about 5,000 sccm, and the hydrogen having a flow rate of
about 500 sccm to about 10,000 sccm.
[0028] In one or more embodiments, the second process gas contains
one or more boron-containing precursors (e.g., diborane) and
hydrogen (H.sub.2). In some examples, the second process gas
contains about 20 mol % or less of diborane and the remainder is
hydrogen. The second process gas contains the boron-containing
precursors (e.g., diborane) at a concentration of about 1 molar
percent (mol %), about 2 mol %, about 3 mol %, about 4 mol %, or
about 5 mol % to about 6 mol %, about 8 mol %, about 10 mol %,
about 12 mol %, about 15 mol %, or about 20 mol %. For example, the
second process gas contains the boron-containing precursors (e.g.,
diborane) at a concentration of about 2 mol % to about 20 mol %,
about 2 mol % to about 15 mol %, about 2 mol % to about 12 mol %,
about 2 mol % to about 10 mol %, about 2 mol % to about 8 mol %,
about 2 mol % to about 5 mol %, about 2 mol % to about 3 mol %,
about 3 mol % to about 20 mol %, about 3 mol % to about 15 mol %,
about 3 mol % to about 12 mol %, about 3 mol % to about 10 mol %,
about 3 mol % to about 8 mol %, about 3 mol % to about 5 mol %,
about 5 mol % to about 20 mol %, about 5 mol % to about 15 mol %,
about 5 mol % to about 12 mol %, about 5 mol % to about 10 mol %,
or about 5 mol % to about 8 mol %.
[0029] The second process gas contains the hydrogen (H.sub.2) at a
concentration of about 80 mol %, about 85 mol %, about 88 mol %,
about 90 mol %, about 92 mol %, about 94 mol %, or about 95 mol %
to about 96 mol %, about 97 mol %, about 98 mol %, or about 99 mol
%. For example, the second process gas contains hydrogen at a
concentration of about 80 mol % to about 99 mol %, about 80 mol %
to about 95 mol %, about 80 mol % to about 92 mol %, about 80 mol %
to about 90 mol %, about 80 mol % to about 88 mol %, about 80 mol %
to about 85 mol %, about 85 mol % to about 99 mol %, about 85 mol %
to about 98 mol %, about 85 mol % to about 95 mol %, about 85 mol %
to about 92 mol %, about 85 mol % to about 90 mol %, about 85 mol %
to about 88 mol %, about 88 mol % to about 97 mol %, about 90 mol %
to about 99 mol %, about 90 mol % to about 95 mol %, about 90 mol %
to about 92 mol %, or about 95 mol % to about 99 mol %.
[0030] In one or more examples, the second flow of the second
process gas has a flow rate of about 1 sccm, about 5 sccm, about 10
sccm, about 20 sccm, about 35 sccm, about 50 sccm, about 65 sccm,
about 80 sccm, or about 100 sccm to about 150 sccm, about 200 sccm,
about 300 sccm, about 500 sccm, about 800 sccm, about 1,000 sccm,
about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about 4.00
sccm, or about 5,000 sccm. For example, the second flow of the
second process gas has a flow rate of about 1 sccm to about 5,000
sccm, about 1 sccm to about 3,000 sccm, about 1 sccm to about 2,000
sccm, about 1 sccm to about 1,000 sccm, about 1 sccm to about 500
sccm, about 1 sccm to about 300 sccm, about 1 sccm to about 200
sccm, about 1 sccm to about 100 sccm, about 1 sccm to about 50
sccm, about 5 sccm to about 5,000 sccm, about 5 sccm to about 3,000
sccm, about 5 sccm to about 2,000 sccm, about 5 sccm to about 1,000
sccm, about 5 sccm to about 500 sccm, about 5 sccm to about 300
sccm, about 5 sccm to about 200 sccm, about 5 sccm to about 100
sccm, about 5 sccm to about 50 sccm, about 10 sccm to about 5,000
sccm, about 10 sccm to about 3,000 sccm, about 10 sccm to about
2,000 sccm, about 10 sccm to about 1,000 sccm, about 10 sccm to
about 500 sccm, about 10 sccm to about 300 sccm, about 10 sccm to
about 200 sccm, about 10 sccm to about 100 sccm, or about 10 sccm
to about 50 sccm.
[0031] In one or more examples, the second process gas contains
about 2 mol % to about 15 mol % of diborane and about 85 mol % to
about 98 mol % of hydrogen, and has a flow rate of about 1 sccm to
about 5,000 sccm. In other examples, the second process gas
contains about 3 mol % to about 12 mol % of diborane and about 88
mol % to about 97 mol % of hydrogen, and has a flow rate of about 5
sccm to about 2,000 sccm. In some examples, the second process gas
contains about 5 mol % to about 10 mol % of diborane and about 90
mol % to about 95 mol % of hydrogen, and has a flow rate of about
10 sccm to about 1,000 sccm.
Properties of the Silicon Nitride Layer or Material
[0032] The silicon boron nitride layer contains at least boron,
silicon, nitrogen, and hydrogen. In some examples, the silicon
boron nitride layer contains more nitrogen than silicon, more
silicon than boron, and more boron than hydrogen. In one or more
embodiments, the silicon boron nitride layer can have a boron
concentration of about 10 atomic percent (at %), about 12 at %,
about 15 at %, or about 18 at % to about 20 at %, about 22 at %,
about 25 at %, about 28 at %, about 30 at %, about 35 at %, about
40 at %, about 45 at %, or about 50 at %. For example, the silicon
boron nitride layer can have a boron concentration of about 10 at %
to about 50 at %, about 10 at % to about 45 at %, about 10 at % to
about 40 at %, about 10 at % to about 35 at %, about 10 at % to
about 30 at %, about 10 at % to about 28 at %, about 10 at % to
about 25 at %, about 10 at % to about 22 at %, about 10 at % to
about 20 at %, about 10 at % to about 18 at %, about 12 at % to
about 45 at %, about 12 at % to about 40 at %, about 12 at % to
about 30 at %, about 15 at % to about 50 at %, about 15 at % to
about 45 at %, about 15 at % to about 40 at %, about 15 at % to
about 35 at %, about 15 at % to about 30 at %, about 15 at % to
about 28 at %, about 15 at % to about 25 at %, about 15 at % to
about 22 at %, about 15 at % to about 20 at %, about 15 at % to
about 18 at %, about 20 at % to about 50 at %, about 20 at % to
about 45 at %, about 20 at % to about 40 at %, about 20 at % to
about 35 at %, about 20 at % to about 30 at %, about 20 at % to
about 28 at %, about 20 at % to about 25 at %, or about 20 at % to
about 22 at %.
[0033] The silicon boron nitride layer can have a hydrogen
concentration of about 1 at %, about 2 at %, about 3 at %, about 4
at %, about 5 at %, or about 6 at % to about 7 at %, about 8 at %,
about 10 at %, about 12 at %, about 15 at %, about 18 at %, or
about 20 at %. For example, the silicon boron nitride layer can
have a hydrogen concentration of about 1 at % to about 20 at %,
about 1 at % to about 15 at %, about 2 at % to about 15 at %, about
3 at % to about 15 at %, about 5 at % to about 15 at %, about 6 at
% to about 15 at %, about 8 at % to about 15 at %, about 10 at % to
about 15 at %, about 12 at % to about 15 at %, about 1 at % to
about 10 at %, about 2 at % to about 10 at %, about 3 at % to about
10 at %, about 5 at % to about 10 at %, about 6 at % to about 10 at
%, or about 8 at % to about 10 at %.
[0034] The silicon boron nitride layer can have a nitrogen
concentration of about 20 at %, about 22 at %, about 25 at %, about
28 at %, or about 30 at % to about 32 at %, about 35 at %, about 38
at %, about 40 at %, about 42 at %, about 45 at %, about 48 at %,
or about 50 at %. For example, the silicon boron nitride layer can
have a nitrogen concentration of about 20 at % to about 50 at %,
about 20 at % to about 40 at %, about 20 at % to about 35 at %,
about 20 at % to about 30 at %, about 20 at % to about 25 at %,
about 25 at % to about 50 at %, about 25 at % to about 40 at %,
about 25 at % to about 35 at %, about 25 at % to about 30 at %,
about 25 at % to about 28 at %, about 30 at % to about 50 at %,
about 30 at % to about 40 at %, about 30 at % to about 35 at %, or
about 30 at % to about 32 at %.
[0035] The silicon boron nitride layer can have a silicon
concentration of about 18 at %, about 20 at %, about 22 at %, about
25 at %, about 28 at %, or about 30 at % to about 32 at %, about 35
at %, about 38 at %, about 40 at %, about 42 at %, or about 45 at
%. For example, the silicon boron nitride layer can have a silicon
concentration of about 18 at % to about 45 at %, about 18 at % to
about 40 at %, about 18 at % to about 35 at %, about 18 at % to
about 30 at %, about 18 at % to about 25 at %, about 25 at % to
about 45 at %, about 25 at % to about 40 at %, about 25 at % to
about 35 at %, about 25 at % to about 30 at %, about 25 at % to
about 28 at %, about 30 at % to about 45 at %, about 30 at % to
about 40 at %, about 30 at % to about 35 at %, about 30 at % to
about 32 at %, about 28 at % to about 40 at %, about 28 at % to
about 35 at %, or about 28 at % to about 32 at %.
[0036] In one or more embodiments, the silicon boron nitride layer
has a nitrogen to silicon atomic ratio of greater than 1. The
silicon boron nitride layer has a nitrogen to silicon atomic ratio
of about 1.05, about 1.1, about 1.15, or about 1.2 to about 1.25,
about 1.3, about 1.35, about 1.4, about 1.45, or about 1.5. For
example, the silicon boron nitride layer has a nitrogen to silicon
atomic ratio of about 1.05 to about 1.5, about 1.05 to about 1.4,
about 1.05 to about 1.35, about 1.05 to about 1.3, about 1.05 to
about 1.25, about 1.05 to about 1.2, about 1.05 to about 1.1, about
1.1 to about 1.5, about 1.1 to about 1.4, about 1.1 to about 1.35,
about 1.1 to about 1.3, about 1.1 to about 1.25, about 1.1 to about
1.2, about 1.15 to about 1.5, about 1.15 to about 1.4, about 1.15
to about 1.35, about 1.15 to about 1.3, about 1.15 to about 1.25,
or about 1.15 to about 1.2. In some embodiments, the silicon boron
nitride layer contains about 60 at % to about 80 at % of boron
bonded to silicon and about 20 at % to about 40 at % of boron
bonded to nitrogen.
[0037] In one or more embodiments, the silicon boron nitride layer
has a leakage current of less than 1.times.10.sup.-9 A/cm.sup.2 at
1.5 MV/cm. The silicon boron nitride layer has a leakage current of
about 5.times.10.sup.-11 A/cm.sup.2, about 6.times.10.sup.-11
A/cm.sup.2, about 8.times.10.sup.-11 A/cm.sup.2, about
9.times.10.sup.-11 A/cm.sup.2, or about 1.times.10.sup.-10
A/cm.sup.2 at 1.5 MV/cm to about 2.times.10.sup.-10 A/cm.sup.2,
about 6.times.10.sup.-10 A/cm.sup.2, about 7.5.times.10.sup.-10
A/cm.sup.2, about 8.times.10.sup.-10 A/cm.sup.2, or about
9.9.times.10.sup.-10 A/cm.sup.2 at 1.5 MV/cm. In some examples, the
silicon boron nitride layer has a leakage current of about
5.times.10.sup.-11 A/cm.sup.2 to about 9.9.times.10.sup.-10
A/cm.sup.2 at 1.5 MV/cm or about 1.times.10.sup.-10 A/cm.sup.2 to
about 7.times.10.sup.-10 A/cm.sup.2 at 1.5 MV/cm.
[0038] In one or more examples, the silicon boron nitride layer
contains about 10 at % to about 50 at % of boron, has a nitrogen to
silicon atomic ratio of about 1.05 to about 1.5, and has a leakage
current of less than 1.times.10.sup.-9 A/cm.sup.2 at 1.5 MV/cm. In
other examples, the silicon boron nitride layer contains about 20
at % to about 35 at % of boron, has a nitrogen to silicon atomic
ratio of about 1.1 to about 1.4, and has a leakage current of about
5.times.10.sup.-11 A/cm.sup.2 to about 9.9.times.10.sup.-10
A/cm.sup.2 at 1.5 MV/cm.
[0039] The silicon boron nitride layer has a thickness of about 50
.ANG., about 80 .ANG., about 100 .ANG., about 120 .ANG., or about
150 .ANG. to about 180 .ANG., about 200 .ANG., about 250 .ANG.,
about 300 .ANG., about 400 .ANG., about 500 .ANG., about 600 .ANG.,
about 700 .ANG., about 800 .ANG., or about 1,000 .ANG.. For
example, the silicon boron nitride layer has a thickness of about
50 .ANG. to about 1,000 .ANG., about 50 .ANG. to about 800 .ANG.,
about 50 .ANG. to about 600 .ANG., about 50 .ANG. to about 500
.ANG., about 50 .ANG. to about 400 .ANG., about 50 .ANG. to about
300 .ANG., about 50 .ANG. to about 200 .ANG., about 50 .ANG. to
about 150 .ANG., about 50 .ANG. to about 100 .ANG., about 50 .ANG.
to about 80 .ANG., about 80 .ANG. to about 1,000 .ANG., about 80
.ANG. to about 800 .ANG., about 80 .ANG. to about 600 .ANG., about
80 .ANG. to about 800 .ANG., about 80 .ANG. to about 400 .ANG.,
about 80 .ANG. to about 300 .ANG., about 80 .ANG. to about 200
.ANG., about 80 .ANG. to about 150 .ANG., about 80 .ANG. to about
100 .ANG., about 100 .ANG. to about 1,000 .ANG., about 100 .ANG. to
about 800 .ANG., about 100 .ANG.to about 600 .ANG., about 100 .ANG.
to about 1000 .ANG., about 100 .ANG. to about 400 .ANG., about 100
.ANG. to about 300 .ANG., about 100 .ANG. to about 200 .ANG., or
about 100 .ANG. to about 150 .ANG..
[0040] In some examples, the silicon boron nitride layer is a
stopper layer and has a thickness of about 50 .ANG., about 80
.ANG., about 100 .ANG., about 120 .ANG., or about 150 .ANG. to
about 180 .ANG., about 200 .ANG., about 250 .ANG., or about 300
.ANG.. For example, a stopper layer contains silicon boron nitride
and has a thickness of about 50 .ANG. to about 300 .ANG., about 100
.ANG. to about 200 .ANG., or about 125 .ANG. to about 175 .ANG.. In
other examples, the silicon boron nitride layer is a supporter
layer and has a thickness of about 100 .ANG., about 120 .ANG.,
about 150 .ANG., about 180 .ANG., or about 200 .ANG. to about 220
.ANG., about 250 .ANG., about 280 .ANG., about 300 .ANG., about 350
.ANG., about 400 .ANG., about 450 .ANG., about 500 .ANG., or about
600 .ANG.. For example, a supporter layer contains silicon boron
nitride and has a thickness of about 100 .ANG. to about 600 .ANG.,
about 300 .ANG. to about 500 .ANG., or about 350 .ANG. to about 450
.ANG..
[0041] FIG. 1 is a schematic cross-sectional view of a process
chamber 100, such as a PE-CVD chamber, utilized during one or more
methods for forming silicon boron nitride materials and layers. The
process chamber 100 includes a chamber body 102 coupled a vacuum
pump 104 and an input manifold 106 coupled to a first gas source
108 and a second gas source 110. The chamber body 102 defines or
otherwise contains a process region 112 that includes a pedestal
114 disposed therein to support a substrate 101. The pedestal 114
includes heating elements (not shown) and a mechanism (not shown)
that retains the substrate 101 on the pedestal 114, such as an
electrostatic chuck, a vacuum chuck, a substrate retaining clamp,
or the like. The pedestal 114 is coupled to and movably disposed in
the process region 112 by a stem 116 connected to a lift chamber
(not shown) that moves the pedestal 114 between an elevated
processing position and a lowered position that facilitates
transfer of the substrate 101 to and from the process chamber 100
through an opening 118 of the chamber body 102.
[0042] A first flow controller 120, such as a mass flow control
(MFC) device, is disposed between the first gas source 108 and the
input manifold 106 to control a first flow of a first process gases
from the first gas source 108 to a showerhead assembly 124, used
for distributing the first process gases across the process region
112. The showerhead assembly can include a faceplate 121, a blocker
plate 123, and a gas box 125, as depicted in FIG. 1. The first and
second process gases can be maintained separately through the input
manifold 106 and subsequently combined just upstream of the gas box
125.
[0043] In one or more examples, a first flow of the first process
gas via line 131 is transferred from the first gas source 108
through the input manifold 106, a second flow of the second process
gas via line 133 is transferred from the second gas source 110
through the input manifold 106, and both the first flow of the
first process gas via line 131 and the second flow of the second
process gas via line 133 are combined to produce a third flow of a
third process gas via line 135 prior to being introduced into the
gas box 125 and eventually into the process region 112.
[0044] The third flow of the third process gas via line 135 can be
maintained at a temperature low enough to keep some the precursors
(e.g., diborane, silane, and/or ammonia) from reacting in the lines
and causing dusting or particulate throughout the showerhead
assembly 124, the process region 112, and/or on the substrate 101.
In some examples, the third flow of the third process gas via line
135 is maintained at a temperature of less than 165.degree. C.,
such as about 20.degree. C., about 25.degree. C., about 35.degree.
C., about 50.degree. C., about 65.degree. C., about 90.degree. C.,
or about 100.degree. C. to about 110.degree. C., about 125.degree.
C., about 135.degree. C., about 150.degree. C., about 160.degree.
C., or about 164.degree. C. For example, the third flow of the
third process gas via line 135 is maintained at a temperature of
about 20.degree. C. to less than 165.degree. C., about 50.degree.
C. to less than 165.degree. C., about 75.degree. C. to less than
165.degree. C., about 90.degree. C. to less than 165.degree. C.,
about 100.degree. C. to less than 165.degree. C., about 120.degree.
C. to less than 165.degree. C., about 150.degree. C. to less than
165.degree. C., about 20.degree. C. to about 160.degree. C., about
50.degree. C. to about 160.degree. C., about 75.degree. C. to about
160.degree. C., about 90.degree. C. to about 160.degree. C., about
100.degree. C. to about 160.degree. C., about 120.degree. C. to
about 160.degree. C., about 150.degree. C. to about 160.degree. C.,
about 20.degree. C. to about 140.degree. C., about 50.degree. C. to
about 140.degree. C., about 75.degree. C. to about 140.degree. C.,
about 90.degree. C. to about 140.degree. C., about 100.degree. C.
to about 140.degree. C., or about 120.degree. C. to about
140.degree. C.
[0045] According to one or more embodiments, which can be combined
with other embodiments described herein, the first process gas
includes at least one or more silicon-containing precursors, one or
more nitrogen-containing precursors, and one or more carrier and/or
process gases (e.g., helium, argon, hydrogen, and/or nitrogen). For
example, the first process gas includes silane (SiH.sub.4), ammonia
(NH.sub.3), helium (He), nitrogen (N.sub.2), argon (Ar), and
hydrogen (H.sub.2). A second controller 122 is disposed between the
second gas source 110 and the input manifold 106 to control a
second flow of a second process gases from the second gas source
110 to the showerhead assembly 124 for distributing the second
process gas across the process region 112. According to one or more
embodiments, which can be combined with other embodiments described
herein, the second process gas includes at least one or more
boron-containing precursors and hydrogen gas, such as a mixture of
diborane (B.sub.2H.sub.6) and hydrogen (H.sub.2).
[0046] The showerhead assembly 124 is coupled to and in fluid
communication with a remote plasma system (RPS) 105. The RPS 105
can be used to form a plasma in the process region 112 from the
first and second process gases in the process region 112. In some
examples, the plasma is ignited or otherwise generated in the RPS
105 disposed outside of the chamber body 102. The plasma is
transferred or otherwise introduced the process region 112 while
depositing the silicon boron nitride layer on the substrate
101.
[0047] A third gas source 128 can be coupled to the chamber body
102 for providing additional process gas (e.g., argon, helium,
nitrogen, or combinations thereof) to control the pressure within
the process region 112. A controller 130 is coupled to the process
chamber 100 and configured to control process conditions of the
process chamber 100 during a deposition process or other
processes.
[0048] FIG. 2 is a schematic cross-sectional view of a process
chamber 200, such as a PE-CVD chamber, utilized for the method of
forming the silicon boron nitride layer, as described and discussed
herein by other embodiments. The process chamber 200 includes the
chamber body 102 coupled the vacuum pump 104 and the manifold 106
coupled to the first gas source 108 and the second gas source 110.
The chamber body 102 defines or otherwise contains the process
region 112 that includes the pedestal 114 disposed therein to
support the substrate 101. The pedestal 114 includes heating
elements (not shown) and a mechanism (not shown) that retains the
substrate 101 on the pedestal 114, such as an electrostatic chuck,
a vacuum chuck, a substrate retaining clamp, or the like. The
pedestal 114 is coupled to and movably disposed in the process
region 112 by the stem 116 connected to a lift chamber (not shown)
that moves the pedestal 114 between an elevated processing position
and a lowered position that facilitates transfer of the substrate
101 to and from the process chamber 200 through the opening 118 of
the chamber body 102.
[0049] The first flow controller 120, such as an MFC device, is
disposed between the first gas source 108 and the input manifold
106 to control a first flow of a first process gases from the first
gas source 108 to the showerhead assembly 124, used for
distributing the first process gases across the process region 112.
According to embodiments, which can be combined with other
embodiments described herein, the first process gas includes at
least silane (SiH.sub.4), ammonia (NH.sub.3), helium (He), nitrogen
(N.sub.2), argon (Ar), and hydrogen (H.sub.2). The second
controller 122 is disposed between the second gas source 110 and
the input manifold 106 to control a second flow of a second process
gases from the second gas source 110 to the showerhead assembly 124
for distributing the second process gas across the process region
112. According to embodiments, which can be combined with other
embodiments described herein, the second process gas includes at
least diborane (B.sub.2H.sub.6) and hydrogen (H.sub.2). The
showerhead assembly 124 is coupled to a radio frequency (RF) power
source 126 for forming a plasma in the process region 112 from the
first and second process gases in the process region 112. The third
gas source 128 can be coupled to the chamber body 102 for providing
additional process gas (e.g., argon, helium, nitrogen, or
combinations thereof) to control the pressure within the process
region 112. The controller 130 is coupled to the process chamber
200 and configured to control aspects of the process chamber 200
during processing.
[0050] FIG. 3 is a flow diagram of a method 300 of forming a
silicon boron nitride layer. To facilitate explanation, FIG. 3 will
be described with reference to Figures and 2. However, it is to be
noted that a chamber other than the process chamber 100 and 200 may
be utilized in conjunction with the method 300. At operation 301, a
substrate 101 is positioned in the process region 112 of the
process chamber 100, 200. The substrate 101 is positioned at a
process distance between the pedestal 114 and the showerhead
assembly 124 of about 100 mil (about 2.5 millimeter (mm)) to about
5,000 mil (about 127 mm) or about 200 mil (about 5 mm) to about
1,000 mil (about 25.4 mm). At operation 302, the process region 112
is heated to a deposition temperature of about 575.degree. C. or
less. The deposition temperature is maintained during the method
300. According to embodiments, which can be combined with other
embodiments described herein, the process region 112 the deposition
temperature of about 550.degree. C. or less is obtained by heating
the pedestal 114. For example, the deposition temperature is about
225.degree. C. to about 575.degree. C. The process region 112
during the method 300 is maintained at a pressure of about 2 Torr
to about 8 Torr or about 3 Torr to about 6 Torr.
[0051] At operation 303, a first flow of the first process gases is
provided to the process region 112. The first flow of the first
process gas includes about 0 sccm to about 2,000 sccm or about 1
sccm to about 500 sccm of silane, about 0 sccm to about 1,000 sccm
or about 10 sccm to about 5,000 sccm of ammonia, about 0 sccm to
about 50,000 sccm or about 500 sccm to about 20,000 sccm of helium,
about 0 sccm to about 50,000 sccm or about 5,000 sccm to about
25,000 sccm of nitrogen (N.sub.2), about 0 sccm to about 50,000
sccm or about 50 sccm to about 10,000 sccm of argon, and about 0
sccm to about 50,000 sccm or about 50 sccm to about 20,000 sccm of
hydrogen (H.sub.2). At operation 304, the first flow of the first
process gases is discontinued. At operation 305, a plasma is formed
concurrently with a second flow of the second process gases
provided to the process region 112. According to embodiments, which
can be combined with other embodiments described herein, plasma is
introduced and/or generated in the process region 112 by the RPS
105 in process chamber 100 or by RF power provided from the RF
power source 126 to the showerhead assembly 124 in process chamber
200. The second flow of the second process gas includes about 0
sccm to about 10,000 sccm or about 1 sccm to about 5,000 sccm of
the second process gases. About 2 mol % to about 15 mol % of the
flow of the second process gases is diborane and the remaining
being hydrogen (H.sub.2). The method 300 forms a silicon boron
nitride layer having the boron concentration of about 10 at % to
about 50 at % or about 10 at % to about 20 at % and the leakage
current is less than 1.times.10.sup.-9 A/cm.sup.2 at 1.5 MV/cm.
[0052] FIG. 4 depicts a capacitor device 400 containing one or more
silicon boron nitride layers or materials which can be deposited or
otherwise produced on a substrate by methods according to one or
more embodiments described and discussed herein. The capacitor
device 400 is formed in a dielectric layer 402 disposed on the
substrate. The dielectric layer 402 can be or include one or more
dielectric materials, such as silicon (e.g., amorphous silicon). A
nitride barrier layer 404 is disposed on the walls of the vias
formed within the dielectric layer 402, as well as disposed on
metal contacts 406. The nitride barrier layer 404 contains one or
more metal nitride materials, such as titanium nitride, tantalum
nitride, tungsten nitride, silicides thereof, dopants thereof, or
any combination thereof. The metal contact 406 contains copper,
tungsten, aluminum, chromium, cobalt, alloys thereof, or any
combination thereof. An oxide layer 410 is contained within the
nitride barrier layer 404 and containing one or more holes or voids
408 defined by or otherwise formed in the oxide layer 410. The
oxide layer can be or include silicon oxide or a dopant thereof. A
stopper layer 420 containing silicon boron nitride can be disposed
in a lower portion of the capacitor device 400, a supporter layer
422 containing silicon boron nitride can be disposed in a middle
portion of the capacitor device 400, a supporter layer 422
containing silicon boron nitride can be disposed in an upper
portion of the capacitor device 400, as depicted in FIG. 4.
[0053] In one or more embodiments, methods for forming the silicon
boron nitride layer include positioning the substrate on the
pedestal in the process region within the process chamber and
introducing a first flow of a first process gas and a second flow
of a second process gas to the process region. The first flow of
the first process gas contains one or more silicon-containing
precursors, one or more nitrogen containing precursors, hydrogen
(H.sub.2), and at least two gases selected from argon, helium,
nitrogen (N.sub.2), or any combination thereof. The method also
includes forming a plasma concurrently with the first flow of the
first process gas and the second flow of the second process gas to
the process region and exposing the substrate to the first process
gas, the second process gas, and the plasma to deposit the silicon
boron nitride layer on the substrate.
[0054] In other embodiments, methods for forming the silicon boron
nitride layer include positioning the substrate on the pedestal in
the process region within the process chamber, heating the pedestal
retaining the substrate to a deposition temperature, maintaining
the process region at a process pressure as described and discussed
above, and introducing a first flow of a first process gas to the
process region. The first flow of the first process gas contains
one or more silicon-containing precursors, one or more nitrogen
containing precursors, helium, nitrogen (N.sub.2), argon, and
hydrogen (H.sub.2). The method further includes discontinuing the
first flow of the first process gases, forming a plasma
concurrently with a second flow of a second process gas containing
one or more boron-containing precursors and hydrogen (H.sub.2) to
the process region, and forming the silicon boron nitride layer on
the substrate.
[0055] In summation, a method of forming a silicon boron nitride
layer having a boron concentration of about 20 at % to about 40 at
% and a leakage current of less than 1.times.10.sup.-9 A/cm.sup.2
at 1.5 MV/cm is provided. The utilization of hydrogen gas allows
for the formation of a nitrogen-rich, silicon-rich, and boron-rich
layer. Hydrogen gas breaks Si--H bonds to remove in-layer hydrogen
and create dangling bonds while process gases react with the active
surface (e.g., the dangling bonds) of the substrate to create
Si--Si bonds, Si--N bonds, and Si--B bonds.
[0056] Embodiments of the present disclosure further relate to any
one or more of the following paragraphs 1-35:
[0057] 1. A method of forming a silicon boron nitride layer,
comprising: positioning a substrate on a pedestal in a process
region within a process chamber; heating a pedestal retaining the
substrate to a deposition temperature of about 225.degree. C. to
about 575.degree. C.; introducing a first flow of a first process
gas and a second flow of a second process gas to the process
region, wherein: the first flow of the first process gas comprises:
silane having a flow rate of about 1 sccm to about 500 sccm,
ammonia having a flow rate of about 10 sccm to about 5,000 sccm,
helium having a flow rate of about 500 sccm to about 20,000 sccm,
nitrogen (N.sub.2) having a flow rate of about 5,000 sccm to about
25,000 sccm, argon having a flow rate of about 50 sccm to about
10,000 sccm, and hydrogen (H.sub.2) having a flow rate of about 50
sccm to about 20,000 sccm, and the second flow of the second
process gas comprises: about 2 molar percent (mol %) to about 15
mol % of diborane, about 85 mol % to about 98 mol % of hydrogen
(H.sub.2), and a flow rate of about 1 sccm to about 5,000 sccm;
forming a plasma concurrently with the first flow of the first
process gas and the second flow of the second process gas to the
process region; and exposing the substrate to the first process
gas, the second process gas, and the plasma to deposit the silicon
boron nitride layer on the substrate.
[0058] 2. A method of forming a silicon boron nitride layer,
comprising: positioning a substrate on a pedestal in a process
region within a process chamber; introducing a first flow of a
first process gas and a second flow of a second process gas to the
process region, wherein: the first flow of the first process gas
comprises a silicon-containing precursor, a nitrogen-containing
precursor, hydrogen (H.sub.2), and at least two gases selected from
the group consisting of argon, helium, nitrogen (N.sub.2), and any
combination thereof, and the second flow of the second process gas
comprises: about 2 molar percent (mol %) to about 15 mol % of
diborane, about 85 mol % to about 98 mol % of hydrogen (H.sub.2),
and a flow rate of about 1 sccm to about 5,000 sccm; forming a
plasma concurrently with the first flow of the first process gas
and the second flow of the second process gas to the process
region; and exposing the substrate to the first process gas, the
second process gas, and the plasma to deposit the silicon boron
nitride layer on the substrate, wherein the silicon boron nitride
layer comprises about 10 atomic percent (at %) to about 50 at % of
boron, wherein the silicon boron nitride layer has a nitrogen to
silicon atomic ratio of about 1.05 to about 1.5, and wherein the
silicon boron nitride layer has a leakage current of less than
1.times.10.sup.-9 A/cm.sup.2 at 1.5 MV/cm.
[0059] 3. A method of forming a silicon boron nitride layer,
comprising: positioning a substrate on a pedestal in a process
region within a process chamber; heating a pedestal retaining the
substrate to a deposition temperature of about 225.degree. C. to
about 575.degree. C.; maintaining the process region at a pressure
of about 2 Torr to about 8 Torr; introducing a first flow of a
first process gas to the process region, wherein the first flow of
the first process gas comprises: silane having a flow rate of about
1 sccm to about 500 sccm, ammonia having a flow rate of about 10
sccm to about 5,000 sccm, helium having a flow rate of about 500
sccm to about 20,000 sccm, nitrogen (N.sub.2) having a flow rate of
about 5,000 sccm to about 25,000 sccm, argon having a flow rate of
about 50 sccm to about 10,000 sccm, and hydrogen (H.sub.2) having a
flow rate of about 50 sccm to about 20,000 sccm; discontinuing the
first flow of the first process gases; forming a plasma
concurrently with a second flow of a second process gas to the
process region, wherein the second flow of the second process gas
has a flow rate of about 1 sccm to about 5,000 sccm and comprises
about 2 molar percent (mol %) to about 15 mol % of diborane and
about 85 mol % to about 98 mol % of hydrogen (H.sub.2); and forming
the silicon boron nitride layer on the substrate.
[0060] 4. The method according to any one of paragraphs 1-3,
wherein the silicon boron nitride layer comprises about 10 atomic
percent (at %) to about 50 at % of boron.
[0061] 5. The method according to any one of paragraphs 1-4,
wherein the silicon boron nitride layer comprises about 10 at % to
about 20 at % of boron.
[0062] 6. The method according to any one of paragraphs 1-5,
wherein the silicon boron nitride layer comprises about 20 at % to
about 30 at % of boron.
[0063] 7. The method according to any one of paragraphs 1-6,
wherein the silicon boron nitride layer comprises about 15 at % to
about 30 at % of boron.
[0064] 8. The method according to any one of paragraphs 1-7,
wherein the silicon boron nitride layer comprises about 15 at % to
about 20 at % of boron.
[0065] 9. The method according to any one of paragraphs 1-8,
wherein the silicon boron nitride layer has a nitrogen to silicon
atomic ratio of about 1.05 to about 1.5.
[0066] 10. The method according to any one of paragraphs 1-9,
wherein the silicon boron nitride layer has a nitrogen to silicon
atomic ratio of about 1.1 to about 1.4.
[0067] 11. The method according to any one of paragraphs 1-10,
wherein the silicon boron nitride layer has a nitrogen to silicon
atomic ratio of about 1.15 to about 1.35.
[0068] 12. The method according to any one of paragraphs 1-11,
wherein the silicon boron nitride layer comprises about 5 at % to
about 15 at % of hydrogen.
[0069] 13. The method according to any one of paragraphs 1-12,
wherein the silicon boron nitride layer has a leakage current of
less than 1.times.10.sup.-9 A/cm.sup.2 at 1.5 MV/cm.
[0070] 14. The method according to any one of paragraphs 1-13,
wherein the silicon boron nitride layer has a leakage current of
about 5.times.10.sup.-11 A/cm.sup.2 to about 9.9.times.10.sup.-10
A/cm.sup.2 at 1.5 MV/cm.
[0071] 15. The method according to any one of paragraphs 1-14,
wherein the silicon boron nitride layer has a leakage current of
about 1.times.10.sup.-10 A/cm.sup.2 to about 7.times.10.sup.-10
A/cm.sup.2 at 1.5 MV/cm.
[0072] 16. The method according to any one of paragraphs 1-15,
wherein the silicon boron nitride layer comprises: about 60 at % to
about 80 at % of boron bonded to silicon; and about 20 at % to
about 40 at % of boron bonded to nitrogen.
[0073] 17. The method according to any one of paragraphs 1-16,
wherein the deposition temperature is about 350.degree. C. to about
560.degree. C.
[0074] 18. The method according to any one of paragraphs 1-17,
wherein the deposition temperature is about 450.degree. C. to about
550.degree. C.
[0075] 19. The method according to any one of paragraphs 1-18,
wherein the first flow of the first process gas and the second flow
of the second process gas are combined to produce a third flow of a
third process gas prior to being introduced into the process
region.
[0076] 20. The method of paragraph 19, wherein the third flow of
the third process gas is maintained at a temperature of about
20.degree. C. to less than 165.degree. C.
[0077] 21. The method according to any one of paragraphs 1-20,
wherein the first flow of the first process gas comprises: the
silane having a flow rate of about 10 sccm to about 250 sccm, the
ammonia having a flow rate of about 50 sccm to about 2,000 sccm,
the helium having a flow rate of about 750 sccm to about 15,000
sccm, the nitrogen having a flow rate of about 10,000 sccm to about
20,000 sccm, the argon having a flow rate of about 200 sccm to
about 7,500 sccm, and the hydrogen having a flow rate of about 200
sccm to about 15,000 sccm.
[0078] 22. The method according to any one of paragraphs 1-21,
wherein the first flow of the first process gas comprises: the
silane having a flow rate of about 20 sccm to about 100 sccm, the
ammonia having a flow rate of about 100 sccm to about 1,000 sccm,
the helium having a flow rate of about 1,000 sccm to about 10,000
sccm, the nitrogen having a flow rate of about 12,000 sccm to about
18,000 sccm, the argon having a flow rate of about 500 sccm to
about 5,000 sccm, and the hydrogen having a flow rate of about 500
sccm to about 10,000 sccm.
[0079] 23. The method according to any one of paragraphs 1-22,
wherein the second flow of the second process gas comprises: about
3 mol % to about 12 mol % of the diborane, about 88 mol % to about
97 mol % of the hydrogen, and a flow rate of about 5 sccm to about
2,000 sccm.
[0080] 24. The method according to any one of paragraphs 1-23,
wherein the second flow of the second process gas comprises: about
5 mol % to about 10 mol % of the diborane, about 90 mol % to about
95 mol % of the hydrogen, and a flow rate of about 10 sccm to about
1,000 sccm.
[0081] 25. The method according to any one of paragraphs 1-24,
further comprising maintaining the process region at a pressure of
about 2 Torr to about 8 Torr.
[0082] 26. The method according to any one of paragraphs 1-25,
wherein the pedestal is positioned at a process distance between
the pedestal and a showerhead of the process chamber, and wherein
the process distance is about 200 mil to about 1,000 mil.
[0083] 27. The method according to any one of paragraphs 1-26,
wherein the silicon boron nitride layer is located in a capacitor
device disposed on the substrate.
[0084] 28. The method according to any one of paragraphs 1-27,
wherein the silicon boron nitride layer is a supporter layer of a
capacitor device.
[0085] 29. The method according to any one of paragraphs 1-28,
wherein the silicon boron nitride layer is a stopper layer of a
capacitor device.
[0086] 30. The method according to any one of paragraphs 1-29,
wherein the silicon boron nitride layer has a thickness of about 50
.ANG. to about 800 .ANG..
[0087] 31. The method according to any one of paragraphs 1-30,
wherein the silicon boron nitride layer is stopper layer and has a
thickness of about 100 .ANG. to about 200 .ANG., or a thickness of
about 150 .ANG..
[0088] 32. The method according to any one of paragraphs 1-31,
wherein the silicon boron nitride layer is supporter layer and has
a thickness of about 200 .ANG. to about 600 .ANG., or a thickness
of about 400 .ANG..
[0089] 33. The method according to any one of paragraphs 1-32,
further comprising: generating the plasma in a remote plasma system
disposed outside of the process chamber; and transferring the
plasma into the process region while depositing the silicon boron
nitride layer on the substrate.
[0090] 34. The method according to any one of paragraphs 1-33,
wherein the silicon boron nitride layer comprises about 20 at % to
about 35 at % of boron, wherein the silicon boron nitride layer has
a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and
wherein the silicon boron nitride layer has a leakage current of
about 5.times.10.sup.-11 A/cm.sup.2 to about 9.9.times.10.sup.-10
A/cm.sup.2 at 1.5 MV/cm.
[0091] 35. The silicon boron nitride layer or a silicon boron
nitride material made, produced, deposited, or otherwise formed by
any one of the methods according to paragraphs 1-34.
[0092] While the foregoing is directed to embodiments of the
disclosure, other and further embodiments may be devised without
departing from the basic scope thereof, and the scope thereof is
determined by the claims that follow. All documents described
herein are incorporated by reference herein, including any priority
documents and/or testing procedures to the extent they are not
inconsistent with this text. As is apparent from the foregoing
general description and the specific embodiments, while forms of
the present disclosure have been illustrated and described, various
modifications can be made without departing from the spirit and
scope of the present disclosure. Accordingly, it is not intended
that the present disclosure be limited thereby. Likewise, the term
"comprising" is considered synonymous with the term "including" for
purposes of United States law. Likewise whenever a composition, an
element or a group of elements is preceded with the transitional
phrase "comprising", it is understood that we also contemplate the
same composition or group of elements with transitional phrases
"consisting essentially of," "consisting of", "selected from the
group of consisting of," or "is" preceding the recitation of the
composition, element, or elements and vice versa.
[0093] Certain embodiments and features have been described using a
set of numerical upper limits and a set of numerical lower limits.
It should be appreciated that ranges including the combination of
any two values, e.g., the combination of any lower value with any
upper value, the combination of any two lower values, and/or the
combination of any two upper values are contemplated unless
otherwise indicated. Certain lower limits, upper limits and ranges
appear in one or more claims below.
* * * * *