U.S. patent application number 16/719226 was filed with the patent office on 2020-04-23 for device-like metrology targets.
The applicant listed for this patent is KLA-Tencor Corporation. Invention is credited to Nuriel Amir, Eran Amit, Vladimir Levinski, Amnon Manassen, Amit Shaked, Liran Yerushalmi.
Application Number | 20200124981 16/719226 |
Document ID | / |
Family ID | 62711659 |
Filed Date | 2020-04-23 |
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United States Patent
Application |
20200124981 |
Kind Code |
A1 |
Levinski; Vladimir ; et
al. |
April 23, 2020 |
DEVICE-LIKE METROLOGY TARGETS
Abstract
Metrology targets, production processes and optical systems are
provided, which enable metrology of device-like targets.
Supplementary structure(s) may be introduced in the target to
interact optically with the bottom layer and/or with the top layer
of the target and target cells configurations enable deriving
measurements of device-characteristic features. For example,
supplementary structure(s) may be designed to yield Moire patterns
with one or both layers, and metrology parameters may be derived
from these patterns. Device production processes were adapted to
enable production of corresponding targets, which may be measured
by standard or by provided modified optical systems, configured to
enable phase measurements of the Moire patterns.
Inventors: |
Levinski; Vladimir; (Migdal
HaEmek, IL) ; Manassen; Amnon; (Haifa, IL) ;
Amit; Eran; (Haifa, IL) ; Amir; Nuriel; (St.
Yokne'am, IL) ; Yerushalmi; Liran; (Zicron Yaacob,
IL) ; Shaked; Amit; (Haifa, IL) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KLA-Tencor Corporation |
Milpitas |
CA |
US |
|
|
Family ID: |
62711659 |
Appl. No.: |
16/719226 |
Filed: |
December 18, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15442111 |
Feb 24, 2017 |
10551749 |
|
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16719226 |
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62442226 |
Jan 4, 2017 |
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62462877 |
Feb 23, 2017 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G03F 7/70625 20130101;
G03F 7/70683 20130101; G03F 7/70633 20130101 |
International
Class: |
G03F 7/20 20060101
G03F007/20 |
Claims
1. A metrology target comprising: a top layer having a top periodic
structure; a bottom layer having a bottom periodic structure; and
at least one supplementary structure configured to interact
optically with at least one of the bottom periodic structure and
the top periodic structure such that a Moire pattern is generated
using the supplementary structure, wherein the at least one
supplementary structure is fabricated of a different material than
the bottom layer.
2. The metrology target of claim 1, wherein the bottom periodic
structure comprises a plurality of periodic multiply patterned
elements, and wherein the at least one supplementary structure is
configured to interact optically with the bottom periodic
structure.
3. The metrology target of claim 2, wherein the multiply patterned
elements comprise recurring sets of corresponding elements, and
wherein the bottom periodic structure comprises multiple cells,
each of the cells lacking one of the multiply patterned elements in
the recurring set.
4. The metrology target of claim 1, wherein the bottom and top
periodic structures have a same pitch and wherein the at least one
supplementary structure has a pitch that is different from the same
pitch to an extent that generates a detectable Moire pattern
between the periodic structures.
5. The metrology target of claim 1, comprising an array of imaging
cells, each cell having different combinations of designed offsets
between the at least one supplementary structure and the top and
bottom periodic structures.
6. The metrology target of claim 1, wherein the bottom periodic
structure has periodic multiply patterned elements each with a
width that is narrower than a width of the supplementary
structure.
7. The metrology target of claim 1, wherein the bottom periodic
structure is made of FinFET elements.
8. The metrology target of claim 1, wherein the supplementary
structure is above the top layer.
9. The metrology target of claim 1, wherein the supplementary
structure is below the bottom layer.
10. A method comprising: providing a metrology target including: a
top layer having a top periodic structure; a bottom layer having a
bottom periodic structure; and at least one supplementary structure
configured to interact optically with at least one of the bottom
periodic structure and the top periodic structure such that a Moire
pattern is generated using the supplementary structure, wherein the
at least one supplementary structure is fabricated of a different
material than the bottom layer; and performing metrology
measurements on the metrology target.
11. The method of claim 10, wherein the supplementary structure
interacts optically with multiply patterned elements in the bottom
periodic structure.
12. The method of claim 11, further comprising removing,
selectively and periodically, specified multiply patterned elements
to yield a modified multiply patterned layer and deriving metrology
measurements from the interaction of the at least one supplementary
structure with the modified multiply patterned layer.
13. The method of claim 10, further comprising configuring the at
least one supplementary structure to yield a detectable Moire
pattern with at least one of the top and bottom periodic
structures.
14. The method of claim 13, further comprising configuring the at
least one supplementary structure to yield detectable Moire
patterns with both the top and the bottom periodic structures.
15. The method of claim 10, further comprising producing the at
least one supplementary structure within a device production
process, by one or more hard mask exposures.
16. The method of claim 10, further comprising depositing two or
more substances to generate the at least one supplementary
structure.
17. The method of claim 16, further comprising modifying parameters
of supplementary structure elements using recurring etching and
deposition.
18. The method of claim 17, wherein the at least one supplementary
structure is configured to yield a detectable Moire pattern with at
least one of the top and bottom periodic structures, the method
further comprising resolving phase information from Moire pattern
measurements of the target.
19. The method of claim 10, wherein the supplementary structure is
above the top layer.
20. The method of claim 10, wherein the supplementary structure is
below the bottom layer.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation application of U.S.
patent application Ser. No. 15/442111 filed on Feb. 24, 2017, which
claims the benefit of U.S. Provisional Patent Application No.
62/462877 filed on Feb. 23, 2017, and of U.S. Provisional Patent
Application No. 62/442226 filed on Jan. 4, 2017, which are
incorporated herein by reference in their entirety.
BACKGROUND OF THE INVENTION
1. Technical Field
[0002] The present invention relates to the field of metrology, and
more particularly, to design, production and measurement of
device-like metrology targets.
2. Discussion of Related Art
[0003] As device production processes advance, metrology copes with
smaller device details which limit significantly the available
overlay budget. Hence new types of targets are required to enable
reliable and accurate metrology measurements of small device
details.
SUMMARY OF THE INVENTION
[0004] The following is a simplified summary providing an initial
understanding of the invention. The summary does not necessarily
identify key elements nor limit the scope of the invention, but
merely serves as an introduction to the following description.
[0005] One aspect of the present invention provides a metrology
target comprising, between a bottom layer and a top layer each
having a corresponding periodic structure, at least one
supplementary structure configured to interact optically with at
least one of the bottom periodic structure and the top periodic
structures.
[0006] These, additional, and/or other aspects and/or advantages of
the present invention are set forth in the detailed description
which follows; possibly inferable from the detailed description;
and/or learnable by practice of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] For a better understanding of embodiments of the invention
and to show how the same may be carried into effect, reference will
now be made, purely by way of example, to the accompanying drawings
in which like numerals designate corresponding elements or sections
throughout.
[0008] In the accompanying drawings:
[0009] FIGS. 1A-1D are high level schematic cross section
illustrations of multi-layered target structures, according to some
embodiments of the invention.
[0010] FIGS. 2A and 2B are high level schematic illustrations of
targets that generate Moire patterns, according to some embodiments
of the invention.
[0011] FIGS. 3A-3H are high level schematic illustrations of target
structures and configurations, according to some embodiments of the
invention.
[0012] FIGS. 4A-4D are high level schematic illustrations of
production procedures, according to some embodiments of the
invention.
[0013] FIGS. 5A-5D are high level schematic illustrations of
optical systems which may be used to measure the targets, according
to some embodiments of the invention.
[0014] FIG. 6 is a high level schematic flowchart of a method,
according to some embodiments of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0015] Prior to the detailed description being set forth, it may be
helpful to set forth definitions of certain terms that will be used
hereinafter.
[0016] The term "layer" as used in this application refers to any
target layer produced in the photolithography process such as a
polysilicon layer, a contact layer, a resist etc. The term
"structure" as used in this application refers to any kind of
designed or produced structure in at least one layer of a metrology
target. The term "periodic structure" as used in this application
refers to any kind of designed or produced structure in at least
one layer which exhibits some periodicity. The periodicity is
characterized by its pitch, namely its spatial frequency. Elements
of the periodic structure may be segmented, i.e., comprise segments
that reduce the size of the minimal target feature. An example for
a typical periodic structure is a grating. It is noted that
periodic structures may represent device elements, or may be device
elements,
[0017] The term "metrology target" as used in this application
refers to a structure that is used to derive measurements that are
indicative of production parameters such as overlay between layers,
structure dimensions and any other accuracy merits. Metrology
targets may be dedicated structures which are produced for
conducting metrology measurements thereupon, or may at least in
part comprise actual device elements, that are used to derive
measurements at certain production steps. The terms "bottom layer",
"previous layer", "top layer and "current layer" as used in this
application refer to a layer (bottom, or previous) in the metrology
target which is deeper and earlier produced than another layer
(top, or current) in the target structure. The term "supplementary
structure" as used in this application refers to any structure
which is added to a design of a metrology target. Supplementary
structure may be or comprise periodic structures but are not
necessarily periodic, and may be designed and produced in any
target layer, including the top and bottom layers and above or
below these, respectively. The term "intermediate layer" as used in
this application refers to a structure produced in lithography step
at a layer that is different from the bottom or top layers. The
intermediate layer is illustrated in the following to be between
the bottom and top layers. While the illustrations depict
supplementary structures as for the sake of simplicity, it is
emphasized that the supplementary structure(s) may be not
intermediate and/or not periodic, as explained below. In certain
embodiments, the supplementary structure(s) may be at the same
layer as the previous or current layers. It is noted that same
numerals are used to denote a layer and a respective structure in
the layer, in order to simplify the explanations.
[0018] With specific reference now to the drawings in detail, it is
stressed that the particulars shown are by way of example and for
purposes of illustrative discussion of the preferred embodiments of
the present invention only, and are presented in the cause of
providing what is believed to be the most useful and readily
understood description of the principles and conceptual aspects of
the invention. In this regard, no attempt is made to show
structural details of the invention in more detail than is
necessary for a fundamental understanding of the invention, the
description taken with the drawings making apparent to those
skilled in the art how the several forms of the invention may be
embodied in practice.
[0019] Before at least one embodiment of the invention is explained
in detail, it is to be understood that the invention is not limited
in its application to the details of construction and the
arrangement of the components set forth in the following
description or illustrated in the drawings. The invention is
applicable to other embodiments or of being practiced or carried
out in various ways. Also, it is to be understood that the
phraseology and terminology employed herein is for the purpose of
description and should not be regarded as limiting.
[0020] Metrology targets, production processes and optical systems
are provided, which enable metrology of device-like targets.
Supplementary structure(s) may be introduced in the target to
interact optically with the bottom layer and/or with the top layer
of the target and target cells configurations enable deriving
measurements of device-characteristic features. For example,
supplementary structure(s) may be designed to yield Moire patterns
with one or both layers, and metrology parameters may be derived
from these patterns. Device production processes were adapted to
enable production of corresponding targets, which may be measured
by standard or by provided modified optical systems, configured to
enable phase measurements of the Moire patterns.
[0021] While it was suggested in the past to create Moire patterns
using the top and the bottom gratings of overlay targets, the
signal of prior art structures was often insufficient for optical
far-field measurements since the evanescent modes of each grating
in this approach decay exponentially and result in weak signals at
most due to the large optical path between the gratings (in the
order of hundreds of nm or more).
[0022] Advantageously, the metrology targets enable overlay (OVL)
and\or critical dimension (CD) measurement of device patterns, as
well as sensitive pitch walk measurements, using intermediate
lithography step(s) that are part of the process flow. The targets
utilize the strong near field interaction between the previous
layer and intermediate layer to yield detectable signals, and
enable the previous layer pattern to be much smaller than typical
optical resolution limit. These targets thus improve the
correlation to the device and the process compatibility.
[0023] FIGS. 1A-1D are high level schematic cross section
illustrations of multi-layered target structures 150, according to
some embodiments of the invention. Targets 150 may comprise a
bottom layer having a bottom periodic structure 90, a top layer
having a top periodic structure 80 and supplementary structures
110, 130 configured to interact optically with at least one of
bottom periodic structure 90 and top periodic structure 80. Any
number and types of layers 93 may be included in targets 150.
Supplementary structures 110, 130 may be periodic, comprise
periodic elements and/or be non-periodic.
[0024] Supplementary structure(s) 110, 130 may be designed to
improve the process robustness of the targets (CMP--chemical
mechanical planarization). For example, structure(s) 110 and/or 130
may be segmented orthogonally to structures 80, 90 to minimize
their effect on the metrology measurements. In certain embodiments,
structure(s) 110 and/or 130 may be designed to improve metrology
measurements by any of: (i) maximizing signal transmission from
bottom layer 90, (ii) preventing signal transmission from below
layer 110, (iii) optimizing the bottom and top layers interference
signal in SCOL targets, (iv) interacting optically with any or both
periodic structures 90, 80, e.g., by generating Moire pattern(s)
therewith, and specifically enabling metrology measurement of small
scale details like device elements, at least in bottom layer 90,
(v) interacting optically with any or both periodic structures 90,
80 to yield Moire pattern(s) in two directions, enabling
simultaneous measurements of overlay and CD (critical dimension),
and (vi) functioning as an apodizer to reduce finite target size
effects. Some of these possibilities are exemplified in more
details below.
[0025] FIG. 1A for example, illustrates the supplementary structure
as intermediate layer 110 designed as a blocking layer or barrier
layer that removes disturbances from lower layers 93 (and
specifically 90) to metrology measurements of target elements above
barrier layer 110. Barrier layer 110 may enable re-using a given
area for multiple measurements of different layer and different
overlays without disturbances from structures which were previously
measured.
[0026] FIG. 1B, in another example, schematically illustrates
supplementary structure 130 which may interact optically with
bottom periodic structure 90 and/or with top periodic structure 80.
In the illustrated example, bottom layer has small scale details
(e.g., tens of nm), e.g., device or device-like features, while top
layer has larger scale details (e.g., hundreds of nm), typical for
providing optical metrology measurements. Supplementary structure
130 may be designed at a scale similar to bottom periodic structure
90 and to interact optically therewith. Simulations with various
top layer CD and intermediate layer space CD's have shown
sensitivity of the overall metrology measurements of targets 150 to
structure details of bottom periodic structure 90, i.e., to details
in the scale of several tens of nm. In the simulated example, the
pitches of structures 90, 130 were 80 nm and 90 nm respectively and
the pitch of structure 80 was 720 nm.
[0027] FIGS. 1C and 1D schematically illustrate bottom layer
periodic structure 90 comprising multiply patterned elements 109
which are produced in multi-patterning steps (i.e., elements
produced by double, quadruple or generally multiple patterning),
for example--finFET ("fin" field effect transistor) elements, which
may have an even smaller pitch of few tens of nm. FIG. 1C and FIG.
1D illustrate examples of multiply patterned elements 109 (as
finFETs) produced by quadruple patterning and exhibiting a
periodicity in groups of four elements 109. Using a cut process,
fin elements 109 may be remove selectively and periodically, e.g.,
in FIG. 1C every fifth fin element is removed (the gap being marked
109A) while in FIG. 1D every fourth fin is removed 109A.
Supplementary structure 130 may be configured to interact optically
with bottom multiply patterned (e.g., finFET) periodic structure 90
and enable optical metrology measurements thereof. In certain
embodiments, target 150 may comprise four cells, wherein in each of
the cells a different element in each repeating group is removed
109A, to enable measuring the inaccuracy in the production of each
aspect of the patterning process separately. Simulations have shown
that the resulting measurements are sensitive to the placement
error of selected missing elements 109A, e.g., when respective
Moire patterns are generated by appropriately designed intermediate
layer 130. In the simulated example, the CD of finFET elements 109
was 10 nm and their pitch was in the order of 40 nm.
[0028] Hence, in certain embodiments, bottom layer 90 of targets
150 may comprise a plurality of periodic multiply patterned
elements 109, produced in multiple patterning steps, with which
supplementary structure 130 is configured to interact optically.
Elements 109 may comprise recurring sets of corresponding elements
109, and target 150 may comprise multiple cells, each lacking a
different one of the elements (109A) in the recurring set. Multiply
patterned elements 109 may be FinFET elements.
[0029] FIGS. 2A and 2B are high level schematic illustrations of
targets 150 that generate Moire patterns, according to some
embodiments of the invention. FIGS. 2A and 2B present schematic
cross section illustrations of imaging targets 151 and SCOL targets
152 (e.g., first order SCOL) respectively, as examples for targets
150. It is explicitly noted, that while in the illustrated
examples, supplementary structure s 130 are physically between top
and bottom periodic structures 80, 90, supplementary structures 130
may as well be located below bottom periodic structures 90, and
even may be part of the lowest silicon layer.
[0030] In certain embodiments, bottom and top periodic structures
90, 80 respectively, have a same pitch (P) and supplementary
structure 130 may be a periodic structure having a pitch
(P+.DELTA.P) that is different from the same pitch (P) to an extent
that generates a detectable Moire pattern between periodic
structures (90, 130 and 80, 130).
[0031] Corresponding Moire patterns may be generated using
supplementary structure 130 (e.g., having a silicon grating) for
measuring overlay between layers 80, 90. Targets 150 may overcome
the difficulty that introducing supplementary structure 130
potentially involves new unknown parameter(s) like the overlay
between supplementary structure 130 and other layers 93, including
periodic structures 80, 90. Thus, while supplementary structure 130
may help in pitch reduction, it may require additional cells and
additional measurements to determine its overlay. However, the
proposed solution, in which supplementary periodic structure 130
creates Moire patterns with both bottom and top periodic structures
90, 80 by having pitch P+.DELTA.P which is slightly different
(larger or smaller) from pitches P of bottom and top periodic
structures 90, 80.
[0032] In certain embodiments, target 150 may be configured as
imaging target 151 having at least a first cell 151A with top and
supplementary structures 80, 130 respectively, and a second cell
151B with bottom and supplementary structures 90, 130 respectively.
While pitches P and P+.DELTA.P may be unresolved, Moire pitch
P(P+.DELTA.P)/.DELTA.P may well be resolved by metrology tools.
Denoting the position of the resist grating (top periodic structure
80) as UG (for "upper grating"); the position of the process layer
grating (bottom periodic structure 80) as BG (for "bottom
grating"); and the position of supplementary structure 130 (which
may be below bottom periodic structure 90) as IG (for "intermediate
grating", in a non-limiting manner)--two overlays may be defined,
namely OVL1=UG-BG (which is the value the metrology intends to
report) and OVL2=UG-IG (which is a byproduct of the target design).
Considering a simplified model with only 0 and .+-.1 diffraction
orders and normal illumination, noting that the most general case
yields similar results, measuring first cell 151A provides a sum of
zero and first diffraction orders with the difference of
topographic phases between zero and first diffraction orders being
denoted as .psi.. First diffraction orders with effective pitch are
the result of double scattering on intermediate (supplementary) and
resist layers (130, 80 respectively, top layer 80 is also termed
resist or coarse pitch layer), i.e., +1 coarse diffraction order=+1
resist diffraction order and -1 intermediate diffraction order and
vice versa, as expressed in Equation 1:
E .apprxeq. e ikxsin ( .theta. 0 ) ( A 0 e i .PSI. + A 1 e i 2 .pi.
P ( x - UG ) - i 2 .pi. P + .DELTA. P ( x - IG ) + A 1 e - i 2 .pi.
P ( x - UG ) + i 2 .pi. P + .DELTA. P ( x - IG ) ) = e ikxsin (
.theta. 0 ) ( A 0 e i .PSI. + 2 A 1 cos [ 2 .pi. .DELTA. P P ( P +
.DELTA. P ) x - 2 .pi. P UG + 2 .pi. P + .DELTA. P IG ] ) Equation
1 ##EQU00001##
Substituting IG=UG-OVL2, the measured signal is a function of
x - UG - OVL 2 P .DELTA. P , ##EQU00002##
i.e., may be denoted as
F 1 ( x - UG - OVL 2 P .DELTA. P ) . ##EQU00003##
For second cell 151B, similar considerations yield Equation 2:
E = e ikxsin ( .theta. 0 ) ( B 0 + B 1 cos [ - 2 .pi. P BG + 2 .pi.
P + .DELTA. P IG + 2 .pi. x .DELTA. P P ( P + .DELTA. P ) ] ) == e
ikxsin ( .theta. 0 ) ( B 0 + B 1 cos [ - 2 .pi. P UG + 2 .pi. P OVL
1 + 2 .pi. P + .DELTA. P IG + 2 .pi. x .DELTA. P P ( P + .DELTA. P
) ] ) Equation 2 ##EQU00004##
[0033] Substituting IG=UG-OVL2 and BG=UG-OVL1, the measured signal
is a function of
x - UG - OVL 2 P .DELTA. P + OVL 1 ( P + .DELTA. P ) / .DELTA. P ,
##EQU00005##
i.e., may be denoted as
F 2 ( x - UG - OVL 2 P .DELTA. P + OVL 1 ( P + .DELTA. P ) /
.DELTA. P ) . ##EQU00006##
The difference between the two cell measurement functions depends
only on OVL1 (and not on IG) and therefore overlay may be expressed
as
OVL = - .DELTA. P P + .DELTA. P Distance , ##EQU00007##
with Distance being the difference in the OVL as measured using the
two cells 151A, 151B.
[0034] In certain embodiments, target 150 may be configured as
scatterometry overlay (SCOL) target 152 comprising bottom,
intermediate and top layers 80, 130 and 90 respectively, in at
least one cell. In this case, the first order signal in the pupil,
for example, may be expressed by Equation 3:
E = e ikxsin ( .theta. 0 ) ( A 1 e i 2 .pi. P UG - i 2 .pi. P +
.DELTA. P IG + B 1 e i 2 .pi. P BG - i 2 .pi. P + .DELTA. P IG )
##EQU00008##
In this case the measured signal (which is the intensity) doesn't
depend on position of intermediate grating 130 at all.
[0035] These derivations provides a large flexibility in
positioning supplementary structure(s) 130, while enabling the use
of supplementary structure(s) 130 in bridging small scale device
features and the larger scale required for optical metrology
measurements.
[0036] FIGS. 3A-3H are high level schematic illustrations of target
structures and configurations, according to some embodiments of the
invention. FIGS. 3A-3H schematically illustrate targets 150A-H
respectively and include both cross sectional illustrations as well
as high level cells organization of targets 150.
[0037] Certain embodiments comprise metrology targets 150
comprising at least two SCOL cells 152 having opposite designed
offsets (+f.sub.3, -f.sub.3) between top periodic structure 80 and
bottom periodic structure 90 and at least one imaging cell 151
lacking top periodic structure 80 and having at least three
supplementary structure s 130, two of which having opposite offsets
(+f.sub.2, -f.sub.2) and one of which having no offset (0) of
supplementary structure 130 with respect to bottom periodic
structure 90.
[0038] Supplementary structure(s) 130 may be configured to yield
Moire patterns 151E by optical interaction with corresponding
bottom periodic structures 90, which are measured with respect to
corresponding top periodic structures 80. The formation of Moire
patterns 151E is illustrated schematically in a top view 151D of
structures 90, 130 and the resulting optical interaction 151E
between them.
[0039] FIG. 3A schematically exemplifies targets 150A having SCOL
cells 152 with layers 90, 130, 80 and imaging cells 151 with layers
90, 130, according to some embodiments of the invention. SCOL cells
152 may be measured to find the overlay between top periodic
structure 80 (e.g., a resist layer) and the Moire pattern resulting
from the optical interactions of layers 90, 130, while imaging
cell(s) 151 may be used to determine the overlay between
supplementary structure(s) 130 and bottom periodic structure 90.
Imaging cells 151 are exemplified in a non-limiting manner in an
AIM (advanced imaging metrology) design having three pairs of
cells: 151A and 151A' with offset +f.sub.2, having center 153A;
151B and 151B' with offset 0, having center 153B; and 151C and
151C' with offset -f.sub.2, having center 153C. Imaging cells in a
perpendicular direction may be added to the design. It is noted
that other layers 93 including the top layer may have structure,
but such which do not interfere optically with supplementary
structures 90, 130. The overlay between supplementary structure 130
and periodic structure 90 can be extracted from these three centers
(for example, if 153C-153B=153B-153A then OVL=0).
[0040] In certain embodiments, imaging cell(s) 151 may be measured
prior to production of top layer 80, i.e., prior to production of
top periodic structure 80, e.g., after the etch of supplementary
structure 130, while SCOL cells 152 may be measured after
production of top periodic structure 80 for the overlay between
structure 80 and Moire pattern 151C (which is measured directly
using imaging cells 151).
[0041] FIG. 3B schematically exemplifies targets 150B having
imaging cells 151 with layers 90, 130, 80, according to some
embodiments of the invention. Certain embodiments comprise
metrology targets 150 comprising at least one imaging cell 151
having at least three supplementary structure s 130, two of which
having opposite offsets (+f.sub.2, -f.sub.2) and one of which
having no offset (0) of supplementary structure 130 with respect to
bottom periodic structure 90. For example, imaging cells 151 may be
organized as illustrated in FIG. 3A.
[0042] It is noted that in certain embodiments, the OVL
measurements between 80 and 90 may be replaced by any arrangement
which conveys phase information (see e.g., FIGS. 5A-5D below) such
as interfering two diffraction orders (e.g., zeroth and first
orders), e.g., by using finite elements along the optical axis such
as a specified finite field stop a specified finite cell size
etc.
[0043] FIG. 3C schematically exemplifies targets 150C having
imaging cells 151A, 151B relating to different Moire patterns,
according to some embodiments of the invention. Each of at least
two imaging cells 151 may have at least three supplementary
structures 130, two of which having opposite offsets and one of
which having no offset of supplementary structure 130 with respect
to bottom periodic structure 90, wherein in one of imaging cells
151, supplementary structure 130 may be configured to form a
detectable Moire pattern with bottom periodic structure 90 and in
another one of imaging cells 151, supplementary structure 130 may
be configured to form a detectable Moire pattern with top periodic
structure 80.
[0044] In certain embodiments, supplementary structure 130 can
interfere with top periodic structure 80 to form one Moire pattern
(e.g., having pitch P.sub.2) as well as with bottom periodic
structure 90 to form another Moire pattern (e.g., having pitch
P.sub.1), as illustrated schematically in FIG. 3C. Different
illumination wavelengths and/or apodizations and/or illumination
angles may be selected to determine which of the modes propagates
and accordingly which Moire pitch is measured. Different imaging
cells 151A, 151B may be designed to enable measurement of different
Moire pitches P.sub.1, P.sub.2 in different cells 151A, 151B, for
example by measuring P.sub.1 before production of layer 80 and/or
using barrier layer 110 above bottom layer 90 before measuring
P.sub.2. Alternatively or complementarily, the measurement system
may be configured to separate pitches P.sub.1, P.sub.2 at the image
plane. Given and unknown overlay, designed offsets between layers
90, 130, 80 may be designed to enable at least three measurements,
form which the unknown overlay may be extracted.
[0045] FIGS. 3D and 3E schematically illustrates targets 150D, 150E
being arrays of imaging cells, according to some embodiments of the
invention. In certain embodiments, metrology target 150 may
comprise an array of imaging cells, each cell having different
combinations of designed offsets .+-.f.sub.2, .+-.f.sub.3 between
top, intermediate and bottom periodic structures 80, 130, 90. Array
1500 may comprise at least nine cells 152A-J with all combinations
of opposite and zero designed offsets, .+-.f.sub.2, .+-.f.sub.3, 0,
between the layers. Array 150E may comprise at least five cells
152A-E, each cell having no offset or a single one of opposite
offsets .+-.f.sub.2, .+-.f.sub.3, 0, between bottom periodic
structure 90 and one of intermediate and top periodic structures
130, 80, respectively. As before, different illumination
wavelengths and/or apodizations and/or illumination angles may be
selected to determine which of the modes propagates and accordingly
which Moire pitch is measured.
[0046] FIG. 3F schematically exemplifies targets 150F having SCOL
cells 152 and an imaging cell 151 for measuring offsets with
respect to finFET elements, according to some embodiments of the
invention. Bottom periodic structure 90 may be created using
multiple lithography steps (for example: Self-Aligned Quadruple
Patterning--SAQP and cut).
[0047] FIG. 3G schematically exemplifies targets 150G having two
imaging cells 151A, 151B, according to some embodiments of the
invention. In certain embodiments, metrology target 150 may
comprise at least two imaging cells 151A, 151B, each having at
least three supplementary structure s 130, two of which having
opposite offsets (.+-.f.sub.2, .+-.f.sub.3), and one of which
having no offset (0) of supplementary structure 130 with respect to
bottom periodic structure 90. In one of imaging cells 151B the
offset (.+-.f.sub.2) is between supplementary structure 130 and
bottom periodic structure 90 and in another one of imaging cells
151A the offset (.+-.f.sub.3) is between top periodic structure 80
and bottom periodic structure 90.
[0048] FIG. 3H schematically exemplifies targets 150H having two
pairs of SCOL cells 152A, 152B, according to some embodiments of
the invention. Metrology target 150 may comprise at least two SCOL
(e.g., first order SCOL) cell pairs 152A, 152B having opposite
designed offsets, one pair 152A having the designed offsets
(.+-.f.sub.3) between top periodic structure 80 and bottom periodic
structure 90, and another pair 152B lacking top periodic structure
80 and has the designed offsets (.+-.f.sub.2) between supplementary
structure 130 and bottom periodic structure 90. In order to measure
the latter, a modified optical system may be used, for example,
modified optical systems disclosed below, e.g., in FIGS. 5A-5D.
[0049] FIGS. 4A-4D are high level schematic illustrations of
production procedures 160, according to some embodiments of the
invention. Device production procedures 160 (e.g., multiple
patterning procedures) may be configured to enable production of
any of targets 150 and in particular of supplementary structure
130, possibly without adding lithography steps to the device
manufacturing process. It is noted that while supplementary
structure(s) 130 are illustrated in FIGS. 4A-4D as intermediate
layers 130, supplementary structure(s) 130 may also be produced at
the same physical layer as bottom or top layers 90, 80
(respectively) and/or below bottom layer 90 or above top layer 80.
In certain embodiments, several supplementary structures 130 may be
produced. It is further noted that supplementary structures 130 may
but must not be periodic.
[0050] FIG. 4A schematically illustrates the use of selective etch
of device pattern followed by deposition in to enable measurements
of device edges, according to some embodiments of the invention.
The additional deposition is needed in order to enable the
measurements by deposing material with different optical
properties, Exemplary production procedures 160 comprises the
following steps:
[0051] Starting (160A) with a pad with a periodic structure 161
(such as a device grating, e.g., finFET elements with minimal
pitch), lithography steps (160B) may involve placing, exposing and
developing resist 163A with a pitch which is resolved by metrology.
Then, etch steps 160C follow (possibly several process steps) in
which resist pattern 163A is moved to the previous layer pattern,
including periodic structure 161. The last step of etch steps 160C
may be a selective etch which removes only one material from the
bottom grating (periodic structure 161). Then, the etched volumes
may be filled with material 164A which has significantly different
optical properties that the etched out material(s) in the bottom
layer (160D) and the layers above the bottom grating may be removed
(160E), e.g., employing planarization. Remaining structures 161A,
161B may be made of different materials. Following depositions of
additional layers, imaging targets may be produced (160F) by
placing, exposing and developing a resist pattern for the current
layer (80) on top of a pad next to the pad processed in steps
160A-E, and/or scatterometry targets may be produced (160G) by
placing, exposing and developing a resist pattern for the current
layer (80) on top of the pad processed in steps 160A-E. It is noted
that production procedures 160 may be modified to yield various
patterning options 165A, 165B, 165C, depending on the parameters
and directions of original periodic structure 161 and of resist
pattern 163A deposited in step 160B.
[0052] It is emphasized that production procedures 160 utilize the
selective etch and deposition steps which are part of the device
lithography process--to create metrology targets, so that the
metrology target edges in one direction are defined by the device
edges and generally to improve the process compatibility of
metrology targets 150.
[0053] FIG. 4B schematically illustrates the use of an additional
hard mask 163B in enabling measurements of the overlay between
bottom periodic structure 90 representing or actually being the
device pattern, and current layer pattern 163B. The measurement may
be incorporated as part of the device production process, e.g., as
part of Litho-Etch-Litho-Etch (LELE) production procedure 160 which
is identical to the device production flow, according to some
embodiments of the invention. Supplementary (intermediate) layer
130 with supplementary structures may be produced above bottom
layer 90 and have a pitch which is selected to interact optically
with bottom structure 90 and/or top structure 80 (illustrated as
mask 163B in FIG. 4B).
[0054] FIG. 4C schematically illustrates creating supplementary
structure 130 by production procedures 160, according to some
embodiments of the invention. Following the application of mask
163A (160B-C, comprising depositing the mask and removing material
volumes which are not protected thereby, respectively) to produce
one type of material in intermediate layer 130 (160D), spaces
between the elements are filled with a second material 164A (160E)
and finally top layer 80 is deposited, possibly after measurements
of supplementary structures 130 and bottom layer 90, as explained
above. It is noted that in standard metrology targets there is no
pattern in intermediate layer 130 (of second material 164A).
[0055] FIG. 4D schematically illustrates creating a single layer,
comprising both bottom periodic structure 90 and supplementary
structure 130, and exhibiting a Moire pattern upon optical
measurement, according to some embodiments of the invention. The
single layer may be produced using multiple lithography steps
160A-E, e.g., lithography and cut step(s) or LELE in production
procedures 160. For example, the process may be designed to yield
elements 161A of bottom periodic structure 90 and filling elements
161B that define the positions for elements 164A of supplementary
structure 130. In certain embodiments, the single layer may
comprise supplementary structure(s) 130 made of a material 164A
that is different from the material of bottom periodic structure
90.
[0056] It is noted that even though the illustrations in FIGS. 4B
and 4D may suggest that structure 164A may violate some design
rules (such as minimal tip to tip distance), this issue may be
easily resolved by choosing the proper pitches for structure 130 in
FIG. 4B and for structures 130 and 90 in FIG. 4D.
[0057] Advantageously, production procedures 160 overcomes
inaccuracies involved in current metrology targets which have
target dimensions different from device dimensions, such as their
different response to scanner aberrations and to other variables of
the manufacturing process which may affect the overlay, the
geometry, LER (line edge roughness) etc.
[0058] FIGS. 5A-5D are high level schematic illustrations of
optical systems 170 which may be used to measure targets 150,
according to some embodiments of the invention. Optical systems 170
are designed to derive phase information, e.g., from targets 150,
of Moire patterns generated by targets 150, and in certain cases in
place of SCOL cells 152. It is noted that in the far field overlays
in Moire patterns may result in phase differences rather than
intensity differences between the 1st and -1st diffraction orders,
and hence, phase information may be preferable to direct 1st order
SCOL measurements. Illustrated optical systems 170 demonstrate, in
a non-limiting manner, implementations for interfering diffraction
orders in order to extract phase information they carry.
[0059] Optical systems 170 comprise an illumination source 61,
illumination field stop and lenses 62, beam splitter 65 through
which the illumination is delivered to objective 66 and onto target
150 on wafer 60, and then back through optical elements such as
lens 68A to detector 69 such as a CCD (charge-coupled device).
[0060] FIGS. 5A and 5B illustrate the use of apodizer 64 and/or
finite field stops 68 configured to diffract the orders so that
specified orders, e.g., the zeroth and the first orders (+1 or -1)
overlap and provide phase information. Any type of apodizer 64 and
field stop 68 may be used, e.g., diffractive or transmissive
elements. Field stop 62 may be introduced with corresponding
optical elements to modify the length of the collection optical
pathway.
[0061] Certain embodiments comprise metrology optical system 170
comprising at least one of apodizer 64 and field stop 68,
configured to interfere the zeroth order reflected diffraction
signal with the first order reflected diffraction signal at a pupil
plane in which detector 69 is located.
[0062] FIG. 5C illustrates exemplary optical system 170 for
interfering +1 diffraction order with -1 diffraction order by
reflecting the captured beam using optical element 67D (e.g.,
comprising corresponding lenses) and superposing reflected pupil
plane image 175B onto original pupil plane image 175A using beam
splitters 67A, mirrors 67C and shutters 67B.
[0063] Shutters 67B are used to regulate beam intensities, to
correct for beam attenuation during their manipulation (e.g.,
attenuation of the reflected beam). Specifically, an attenuation
factor a can be measured using Equation 4, with E.sub.R and E.sub.L
denoting the electric field resulting from each of the optical
paths and (k.sub.x, k.sub.y) denoting the pupil coordinates:
E.sub.R(k.sub.x, k.sub.y)=aE.sub.L(-k.sub.x, -k.sub.y) Equation
4
The signal resulting from the interference of +1 and -1 orders
(which have positive and negative k values, respectively), which
depends on the overlay, may be expressed as in Equation 5:
E(k.sub.x, k.sub.y)=E.sub.R(k.sub.x, k.sub.y)+aE.sub.L(-k.sub.x,
-k.sub.y) Equation 5
The measured intensity I(k.sub.x, k.sub.y) depends of the overlay,
as expressed in Equation 6, with P.sub.1, P.sub.2 denoting the
Moire pitches and .sub.1 and .sub.2 denoting the lateral position
of the first and second gratings:
I ( k x , k y ) .apprxeq. E R 2 [ 1 + a 2 + 2 a cos ( 4 .pi. ( 1 1
/ P 1 - 2 P 2 ) ) ] Equation 6 ##EQU00009##
Equation 6 shows that the measured intensity depends on the OVL
(for example, by choosing .sub.1=0 and OVL= .sub.2, without loss of
generality.
[0064] Certain embodiments comprise metrology optical system 170
comprising an optical assembly (e.g., beam splitters 67A, shutters
67B, mirrors 67C and optical element 67D) configured to interfere a
part of the reflected signal (175A) with a mirror image thereof
(175B) to yield, at a pupil plane in which detector 69 is located,
an interference of the +1 first order reflected diffraction signal
with the -1 first order reflected diffraction signal. In FIG. 5C
the location of 67C elements may be modified mechanically to
control the optical path. In addition phase modulating element(s)
may be added to control the phase of the illumination which is
interfered with the signal.
[0065] FIG. 5D illustrates exemplary optical system 170 for
interfering the pupil signal with a uniform field across the pupil
to create overlay sensitivity. In the illustrated example, beam
splitters 67A, mirror 67C and attenuator 67E are used to introduce
some of the illumination as the uniform field and adjust the
intensity thereof, to interfere with the collected signal. In
certain embodiments, optical systems 170 may interfere the signal
with an external uniform beam (for example, by replacing mirror 67C
with an additional illumination source).
[0066] Certain embodiments comprise metrology optical system 170
comprising an optical assembly (e.g., beam splitters 67A, mirror
67C and attenuator 67E) configured to interfere a part of the
illuminated radiation with the collected signal to derive phase
information of the reflected signal.
[0067] In certain embodiments, optical system 170 may be configured
to measure the metrology signal in a field plane, in which the
diffraction orders interfere, to derive the overlay from the phase
information contained in this interference. In certain embodiments,
optical system 170 may be configured to provide ellipsometry
measurements that contain the required phase information.
[0068] FIG. 6 is a high level schematic flowchart of a method 200,
according to some embodiments of the invention. Method 200 may be
at least partially implemented by at least one computer processor,
e.g., in a metrology module. Certain embodiments comprise computer
program products comprising a computer readable storage medium
having computer readable program embodied therewith and configured
to carry out of the relevant stages of method 200. Certain
embodiments comprise target design files of respective targets
designed by embodiments of method 200. Certain embodiments comprise
metrology targets produced by corresponding embodiments of method
200 and/or metrology measurements thereof.
[0069] Method 200 may comprise designing a metrology target with
supplementary target structures, e.g., as one or more supplementary
layer(s) (stage 210) and/or performing metrology measurements on
respective metrology targets.
[0070] In certain embodiments, method 200 may comprise configuring
the supplementary layer as an optical separation layer (stag
212).
[0071] Method 200 may comprise incorporating a supplementary layer
having a supplementary (possibly periodic or partially periodic)
structure(s) between a bottom layer and a top layer of a metrology
target (stage 220), the supplementary structure configured to
interact optically with at least one of a bottom periodic structure
and a top periodic structure in the bottom and top layers,
respectively (stage 230).
[0072] In certain embodiments, method 200 may comprise designing
the supplementary structure(s) to optically interact with bottom
elements, produced in multi-patterning steps such as finFET
elements (stage 232). Method may comprise removing, selectively and
periodically, specified finFET elements to yield a modified finFET
layer (stage 235) and deriving metrology measurements from the
interaction of the supplementary structure with the modified finFET
layer (stage 237).
[0073] Method 200 may comprise introducing designed offsets between
the top, supplementary and bottom structures (stage 240) and using
paired designed offsets with opposite signs (stage 245). Method 200
may comprise designing a compound target comprising cells with
different offsets between different layers (stage 250) and/or
deriving metrology parameters from measurements of the cells (stage
255). Method 200 may comprise designing and/or using three layered
SCOL cells and two layered imaging cells, the latter lacking the
top periodic structure (stage 260), Method 200 may comprise
combining two or more two-layered SCOL cells and/or two or more
two-layered imaging cells, with different layer selections and
different designed offsets (stage 270).
[0074] In certain embodiments, method 200 may further comprise
configuring the supplementary structure to yield a detectable Moire
pattern with at least one of the top and bottom periodic structures
(stage 280). Method 200 may comprise configuring the supplementary
structure to yield detectable Moire patterns with both the top and
the bottom periodic structures (stage 285), e.g., two Moire
patterns within three layered cells, each layer comprising
unresolved periodic structures (stage 285). The Moire patterns may
be measured with corresponding imaging cells (stage 287) and/or
with corresponding SCOL cells. Method 200 may comprise designing
the supplementary structure to have a pitch slightly different from
a common pitch of the top and bottom structures, to yield Moire
patterns of the same pitch with either layer (stage 290), e.g.,
designing Moire pattern generating cells as SCOL and/or imaging
cells (stage 295).
[0075] Method 200 may further comprise producing metrology targets
using a (possibly modified) device production flow (stage 300) and
using device elements as part of the target. Method 200 may
comprise utilizing the device production flow to introduce
supplementary structure(s) to the metrology targets (stage 305).
Method 200 may use process steps of the standard device
manufacturing process that are usually ignored in the metrology
target design, resulting in the possibility to use without
modification the device production flow.
[0076] For example, method 200 may comprise producing the
supplementary layer by one or more hard mask exposures (stage 307).
Method 200 may comprise depositing two or more substances to
generate the supplementary structure (stage 310). Method 200 may
further comprise modifying parameters of supplementary structure
elements using recurring etching and deposition (stage 315). In
certain embodiments, the supplementary structure may be configured
to yield a detectable Moire pattern with at least one of the top
and bottom periodic structures.
[0077] Method 200 may comprise deriving imaging and/or SCOL
metrology measurements from the produced targets (stage 320).
Method 200 may further comprise resolving phase information from
Moire pattern measurements of the target (stage 325), e.g., by
interfering a SCOL first order signal from the target, by at least
one of: manipulating the illumination, interfering the signal with
a reference beam and interfering first with minus first order
signals (stage 330) or possibly with the zeroth order signal.
[0078] In certain embodiments, method 200 comprises depositing an
optical separation layer configured to block optical interaction
with structures below the deposited layer, and producing a
metrology target above the optical separation layer.
[0079] In the above description, an embodiment is an example or
implementation of the invention. The various appearances of "one
embodiment", "an embodiment", "certain embodiments" or "some
embodiments" do not necessarily all refer to the same
embodiments.
[0080] Although various features of the invention may be described
in the context of a single embodiment, the features may also be
provided separately or in any suitable combination. Conversely,
although the invention may be described herein in the context of
separate embodiments for clarity, the invention may also be
implemented in a single embodiment.
[0081] Certain embodiments of the invention may include features
from different embodiments disclosed above, and certain embodiments
may incorporate elements from other embodiments disclosed above.
The disclosure of elements of the invention in the context of a
specific embodiment is not to be taken as limiting their use in the
specific embodiment alone.
[0082] Furthermore, it is to be understood that the invention can
be carried out or practiced in various ways and that the invention
can be implemented in certain embodiments other than the ones
outlined in the description above.
[0083] The invention is not limited to those diagrams or to the
corresponding descriptions, For example, flow need not move through
each illustrated box or state, or in exactly the same order as
illustrated and described.
[0084] Meanings of technical and scientific terms used herein are
to be commonly understood as by one of ordinary skill in the art to
which the invention belongs, unless otherwise defined.
[0085] While the invention has been described with respect to a
limited number of embodiments, these should not be construed as
limitations on the scope of the invention, but rather as
exemplifications of some of the preferred embodiments. Other
possible variations, modifications, and applications are also
within the scope of the invention. Accordingly, the scope of the
invention should not be limited by what has thus far been
described, but by the appended claims and their legal
equivalents.
* * * * *