U.S. patent application number 10/055339 was filed with the patent office on 2002-10-03 for silicon single crystal, silicon wafer, and epitaxial wafer.
This patent application is currently assigned to SUMITOMO METAL INDUSTRIES, LTD.. Invention is credited to Asayama, Eiichi, Horai, Masataka, Katahama, Hisashi, Koike, Yasuo, Kubo, Takayuki, Murakami, Hiroki, Sadamitsu, Shinsuke, Sueoka, Kouji, Umeno, Shigeru.
Application Number | 20020142170 10/055339 |
Document ID | / |
Family ID | 23425173 |
Filed Date | 2002-10-03 |
United States Patent
Application |
20020142170 |
Kind Code |
A1 |
Asayama, Eiichi ; et
al. |
October 3, 2002 |
Silicon single crystal, silicon wafer, and epitaxial wafer
Abstract
There are provided silicon single crystal, silicon wafer, and
epitaxial wafer having a sufficient gettering effect suitable for a
large-scale integrated device. The silicon single crystal which is
suitable for an epitaxial wafer is grown with nitrogen doping at a
concentration of 1.times.10.sup.13 atoms/cm.sup.3 or more, or with
nitrogen doping at a concentration of 1.times.10.sup.12
atoms/cm.sup.3 and carbon doping at a concentration of
0.1.times.10.sup.16-5.times.10.sup.16 atoms/cm.sup.3 and/or boron
doping at a concentration of 1.times.10.sup.17 atoms/cm.sup.3 or
more. The silicon wafer is produced by slicing from the silicon
single crystal, and an epitaxial layer is grown on a surface of the
silicon wafer to produce the epitaxial wafer. The present invention
provides an epitaxial wafer for a large-scale integrated device
having no defects in a device-active region and having an excellent
gettering effect without performance of an extrinsic or intrinsic
gettering treatment, which is a factor for increasing the number of
production steps and production costs.
Inventors: |
Asayama, Eiichi; (Saga-shi,
JP) ; Horai, Masataka; (Ogi-gun, JP) ;
Murakami, Hiroki; (Ogi-gun, JP) ; Kubo, Takayuki;
(Nishinomiya-shi, JP) ; Umeno, Shigeru;
(Sasebo-shi, JP) ; Sadamitsu, Shinsuke; (Saga-shi,
JP) ; Koike, Yasuo; (Kashima-shi, JP) ;
Sueoka, Kouji; (Amagasaki-shi, JP) ; Katahama,
Hisashi; (Kishima-gun, JP) |
Correspondence
Address: |
ARMSTRONG,WESTERMAN & HATTORI, LLP
1725 K STREET, NW.
SUITE 1000
WASHINGTON
DC
20006
US
|
Assignee: |
SUMITOMO METAL INDUSTRIES,
LTD.
|
Family ID: |
23425173 |
Appl. No.: |
10/055339 |
Filed: |
January 25, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10055339 |
Jan 25, 2002 |
|
|
|
09362216 |
Jul 28, 1999 |
|
|
|
Current U.S.
Class: |
428/446 ;
428/64.1 |
Current CPC
Class: |
C30B 15/00 20130101;
Y10T 428/21 20150115; C30B 29/06 20130101 |
Class at
Publication: |
428/446 ;
428/64.1 |
International
Class: |
B32B 003/02 |
Claims
1. A silicon single crystal suitable for production of an epitaxial
wafer characterized in that the single crystal is grown with
nitrogen doping at a concentration of 1.times.10.sup.13
atoms/cm.sup.3 or more.
2. A silicon wafer, which is produced by slicing a silicon single
crystal as described in claim 1.
3. An epitaxial wafer in which an epitaxial layer is grown on a
surface of a silicon wafer as described in claim 2.
4. An epitaxial wafer according to claim 3, which has an oxygen
concentration of 12.times.10.sup.17 atoms/cm.sup.3 or more when the
wafer is subjected to a device process carried out at 1100.degree.
C. or higher after epitaxial growth.
5. A silicon single crystal suitable for production of an epitaxial
wafer characterized in that the single crystal is grown with
nitrogen doping at a concentration of 1.times.10.sup.12
atoms/cm.sup.3 or more and carbon doping at a concentration of
0.1.times.10.sup.16-5.times.10.sup.16 atoms/cm.sup.3.
6. A silicon wafer, which is produced by slicing a silicon single
crystal as described in claim 5.
7. An epitaxial wafer in which an epitaxial layer is grown on a
surface of a silicon wafer as described in claim 6.
8. An epitaxial wafer according to claim 7, which has an oxygen
concentration of 12.times.10.sup.17 atoms/cm.sup.3 or more when the
wafer is subjected to a device process carried out at 1100.degree.
C. or higher after epitaxial growth.
9. A silicon single crystal suitable for production of an epitaxial
wafer characterized in that the single crystal is grown with
nitrogen doping at a concentration of 1.times.10.sup.12
atoms/cm.sup.3 or more and boron doping at a concentration of
1.times.10.sup.17 atoms/cm.sup.3 or more.
10. A silicon wafer, which is produced by slicing a silicon single
crystal as described in claim 9.
11. An epitaxial wafer in which an epitaxial layer is grown on a
surface of a silicon wafer as described in claim 10.
12. An epitaxial wafer according to claim 11, which has an oxygen
concentration of 12.times.10.sup.17 atoms/cm.sup.3 or more when the
wafer is subjected to a device process carried out at 1100.degree.
C. or higher after epitaxial growth.
13. A silicon single crystal suitable for production of an
epitaxial wafer characterized in that the single crystal is grown
with nitrogen doping at a concentration of 1.times.10.sup.12
atoms/cm.sup.3 or more, carbon doping at a concentration of
0.1.times.10.sup.16-5.times.10.sup.16 atoms/cm.sup.3, and boron
doping at a concentration of 1.times.10.sup.17 atoms/cm.sup.3 or
more.
14. A silicon wafer, which is produced by slicing a silicon single
crystal as described in claim 13.
15. An epitaxial wafer in which an epitaxial layer is grown on a
surface of a silicon wafer as described in claim 14.
16. An epitaxial wafer according to claim 11, which has an oxygen
concentration of 12.times.10.sup.17 atoms/cm.sup.3 or more when the
wafer is subjected to a device process carried out at 1100.degree.
C. or higher after epitaxial growth.
17. An epitaxial wafer in which an epitaxial layer is grown on a
surface of a single crystal wafer which is sliced from a silicon
single crystal grown accompanied by nitrogen doping and generates
oxidation-induced stacking faults at a density of
1.times.10.sup.2/cm.sup.2 or more through a thermal oxidation
treatment.
18. An epitaxial wafer in which an epitaxial layer is grown on a
surface of a single crystal wafer which is sliced from a silicon
single crystal grown accompanied by nitrogen doping and generates
defects at a density of 5.times.10.sup.4/cm.sup.2 or more, as
measured in the cross section thereof, through a thermal treatment
of 1000.degree. C. or more.
19. An epitaxial wafer in which an epitaxial layer is grown on a
silicon wafer which is sliced from a silicon single crystal grown
accompanied by nitrogen doping at a concentration of
1.times.10.sup.12 atoms/cm.sup.3 or more when the epitaxial layer
is subjected to a high-temperature device process carried out at a
temperature substantially higher than 800.degree. C. after
epitaxial growth.
20. An epitaxial wafer produced by growing an epitaxial layer on a
surface of a nitrogen-doped wafer, which epitaxial wafer allows to
generate defects at a density of 1.times.10.sup.4/cm.sup.2 or more,
as measured in the cross section thereof, through a thermal
treatment of 1000.degree. C. or more.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to a silicon single crystal
used for a semiconductor integrated circuit device and to a silicon
wafer and an epitaxial wafer, which are obtained therefrom and used
for forming an integrated circuit. More particularly, the present
invention relates to a silicon single crystal, a silicon wafer, and
an epitaxial wafer exhibiting high gettering capability which is
provided by doping with nitrogen solely, or with nitrogen and
carbon and/or boron during growth of a single crystal and without
provision of an additional step.
DESCRIPTION OF THE PRIOR ART
[0002] As the integration density of silicon semiconductor
integrated circuit devices rapidly increases, a silicon wafer from
which devices are formed is subjected to increasingly severe
specifications. Thus, since circuits are made thinner with
increasing integration density within a device active region
wherein a device is formed on a wafer, crystal defects, such as
dislocations and elemental metal impurities other than a dopant,
which increase leakage current and shorten the life of a carrier
are subjected to more rigorous limitations than ever before.
[0003] Conventionally, a wafer produced by slicing a silicon single
crystal obtained through the Czochralski method has been used for a
semiconductor device. Generally, the wafer contains oxygen at a
concentration of about 10.sup.18 atoms/cm.sup.3. Although oxygen is
effective for enhancing the strength of a silicon wafer by
preventing generation of dislocations and for providing a gettering
effect, oxygen is well known to deposit in the form of an oxide and
to induce crystal defects such as dislocation or a stacking fault
caused by heating during production of a device. However, in a
process of device production, a defect-free DZ layer (denuded zone)
having a thickness of about 10 .mu.m is formed near the wafer
surface by diffusion of oxygen to the outside, since the wafer is
maintained at a temperature as high as 1100-1200.degree. C. for
several hours so as to form a field oxide film through LOCOS Local
Oxidation of Silicon) and a well diffusion layer. The denuded zone
serves as a device active region, to thereby provide a reduction in
crystal defects.
[0004] However, in conjunction with the increasing density of
integration, a high-energy ion implantation method has been
employed for forming a well, and a device has been produced at a
temperature of 1000.degree. C. or less. Therefore, oxygen diffuses
slowly, and formation of the above-mentioned denuded zone is
insufficient. Even though reduction of oxygen content in a
substrate has been attempted, crystal defects are insufficiently
suppressed and the performance of a wafer is deteriorated by the
reduction in oxygen content. Thus, attempts to reduce oxygen
content have yielded unsatisfactory results. Therefore, an
epitaxial wafer wherein a silicon epitaxial layer containing
substantially no crystal defects has been formed on a silicon slice
serving as a wafer substrate has been developed and is widely used
for a large-scale integrated device.
[0005] Thus, feasibility of complete prevention of crystal defects
in a device active region on a wafer can be enhanced by employment
of an epitaxial wafer. However, contamination with elemental metal
impurities exerts a strong influence, because a complicated process
is required for realizing high-density integration and
contamination occurs frequently. Although purification of the
production environment and raw materials is essential for
preventing contamination, complete prevention of contamination in
the process of producing the device is difficult. Therefore,
gettering is employed. Gettering is a method in which impurity
elements provided through contamination are collected outside the
device active region so as to eliminate negative influences.
[0006] Elemental metal impurities diffuse into a silicon crystal at
a relatively low temperature, to thereby form a solid solution, and
generally diffuse in silicon at high speed. When crystal defects
such as dislocation and distortion caused by fine deposits occur,
the impurities tend to concentrate to the defects, in order to
attain a more stable energy state than that in the case where
impurities exist in the crystal lattice. Therefore, a crystal
defect is intentionally introduced to thereby capture and confine
impurities. The site where the impurities are captured is called a
sink. Sinks are produced by two types of gettering methods; i.e.,
extrinsic gettering and intrinsic gettering.
[0007] Extrinsic gettering is a method in which crystal defects are
introduced by means of distortion induced by extrinsic factors such
as sandblasting, polishing, laser radiation, ion implantation, and
growth of Si.sub.3N.sub.4 film or polycrystalline Si film; whereas
intrinsic gettering is a method in which a number of micro-defects,
which are probably induced by oxygen while a wafer obtained through
the Czochralski process involving oxygen is alternately subjected
to high-temperature heat treatment and low-temperature heat
treatment, are employed as sinks.
[0008] Of the above-mentioned gettering techniques, extrinsic
gettering represented by imparting distortion to a reverse side of
a wafer involves drawbacks such as an increase in production costs
due to addition of production steps; generation of particles due to
detachment of silicon chips from a portion imparted with
distortion; and warp of a wafer resulting from the treatment.
[0009] In intrinsic gettering, heat treatment is required for
effective production of sinks, and therefore intrinsic gettering
requires additional steps. Furthermore, in an epitaxial wafer
substrate, oxide precipitates which are to serve as nuclei of
micro-defects shrink to disappear due to employment of a
temperature as high as 1050-1200.degree. C. during a step for
forming an epitaxial layer, to thereby disturb subsequent formation
of sinks during heat treatment. Particularly, as mentioned above,
when a device process is carried out at relatively low temperature,
the growth rate of oxide precipitates decreases to
disadvantageously result in an insufficient gettering effect to
metal impurities at an initial stage of the device process as well
as during the entire course of the step.
[0010] To overcome these drawbacks, there has been a method
employed in which a wafer is thermally treated before and after an
epitaxial process in order to intentionally generate crystal
defects which getter impurities. Conventionally, a number of
gettering methods have been proposed. However, other drawbacks
remain, such as a long-duration heat treatment and complex
processing steps.
[0011] For example, Japanese Patent Application Laid-Open (kokai)
No. 3-50186 discloses a method in which a heat treatment is carried
out at 750-900.degree. C. before an epitaxial process to thereby
ensure generation of oxide precipitates. Although the specific
temperature for the heat treatment is not specified, based on
assumptions that follow from the description, the heat treatment
might be required for as long as four hours or more. Japanese
Patent Application Laid-Open (kokai) No. 8-250506 discloses a
method in which one-step or two-step annealing at low temperature
is carried out; the annealed wafer is maintained within a medium
temperature range; and subsequently epitaxial growth is carried
out. Furthermore, Japanese Patent Application Laid-Open (kokai) No.
10-229093 discloses a method comprising treating a wafer sliced
from a crystal doped with carbon at a concentration of
0.3.times.10.sup.16 to 2.5.times.10.sup.16 atoms/cm.sup.3 at
600-900.degree. C. for 15 minutes to four hours; polishing one or
both surfaces of the wafer; and carrying out epitaxial growth.
[0012] With regard to a heat treatment after an epitaxial process,
Japanese Patent Application Laid-Open (kokai) No. 63-198334
discloses a method in which annealing is carried out at
650-900.degree. C. for as long as 4-20 hours, or stepwise
temperature elevation between 650.degree. C. and 900.degree. C. is
carried out after an epitaxial process to thereby ensure generation
of oxide precipitates. Japanese Patent Application Laid-Open
(kokai) No. 63-227026 discloses a method in which carbon is doped
at a high concentration while a crystal is being pulled; epitaxial
growth is carried out; and two-step heat treatment i.e., low
temperature annealing and medium temperature annealing, is carried
out to thereby ensure generation of oxide precipitates. The method
also requires a heat treatment of eight hours or longer.
[0013] As described hereinabove, a heat treatment carried out
before and after an epitaxial process may introduce problems, such
as decrease in productivity and increase in costs due to an
increase in the number of steps; damage to a boat during the
treatment; and a reduction in yield due to particle generation.
Moreover, since a variety of device processes are carried out after
an epitaxial process and the history of the heat treatment of a
wafer varies in accordance with the device processes, formation of
oxide precipitates, growth of the precipitates, and gettering
capability induced thereby also vary. Therefore, heat treatment
conditions must be selected in accordance with the device
processes.
SUMMARY OF THE INVENTION
[0014] To overcome the above drawbacks involved in production of a
silicon single crystal, a silicon wafer, and an epitaxial wafer, an
object of the present invention is to provide a silicon single
crystal characterized in that precipitates which are not
extinguished even during a high-temperature epitaxial process are
formed therein without performance of extrinsic or intrinsic
gettering treatment, which is a factor for increasing costs, and in
that a gettering effect thereof is stable during any subsequent
device process involving any temperature profile. Another object of
the present invention is to provide a silicon wafer obtained from
the silicon single crystal. Still another object of the present
invention is to provide an epitaxial wafer produced from the
silicon wafer.
[0015] Oxidation-induced stacking fault (hereinafter referred to as
simply "OSF") is one type of fine crystal defect attributed to
contained oxygen. OSF is a stacking fault generated in a crystal
under an oxide film during a high-temperature oxidation treatment
in a device process. Generation of OSF exhibits positive
correlation with the content of oxygen in a Si crystal. The defect
is grown from oxide precipitates serving as growth nuclei. When a
Si single crystal wafer produced through the Czochralski method is
treated at 1000-1200.degree. C. for 1-20 hours, ring-like
distributed oxidation-induced stacking faults (hereinafter referred
to as "OSF rings") may be generated around the axis along which the
single crystal is pulled. The present inventors have found that a
Si epitaxial layer is formed on a substrate including OSF rings and
that oxide deposits within a ring region function as effective
gettering sites without being extinguished during a production step
of a device performed after epitaxial growth.
[0016] In general, an OSF ring has a width of some mm to some tens
of mm and a boundary between an OSF ring and an adjacent region is
distinctly defined. When a crystal is pulled at a high pulling
speed, the diameter of the ring increases to approximately the
outer diameter of a wafer, whereas when the pulling speed is
reduced, the OSF rings are gradually reduced in diameter and
eventually extinguished.
[0017] In consideration of the gettering effect induced by crystal
defects in an OSF ring region, the present inventors have conducted
a variety of studies directed toward conditions that increase the
width of an OSF ring, and have found that doping of nitrogen during
Czochralski growth of a single crystal increases the width of the
ring. Thus, when the entire surface of a wafer serves as an OSF
region, nuclei of precipitates that are difficult to extinguish
during an epitaxial process and stable at high temperature
effectively function as gettering sites.
[0018] Effects of nitrogen doping during Czochralski growth of a
single crystal have conventionally been known. For example,
Japanese Patent Application Laid-Open (kokai) No. 61-17495
discloses an effect for strengthening a crystal; Japanese Patent
Application Laid-Open (kokai) No. 60-251190 discloses an effect for
preventing generation and movement of dislocation induced by
thermal stress; and Japanese Patent Application Laid-Open (kokai)
No. 5-294780 discloses an effect for preventing generation of etch
pits in a wafer and a decrease in gate oxide integrity of a device.
However, such disclosed methods are directed toward preventing
dislocations or preventing deterioration in withstand voltage, and
effects of these methods on gettering and the shape of OSF rings
have remained unknown.
[0019] Thus, the present inventors have studied conditions for
increasing the width of OSF rings and generating crystal defects
attributed to the rings on the entire surface of a wafer, as well
as for increasing the effectiveness of the gettering effect, and
have found that when nitrogen serves as a single dopant and is
doped in an amount of 1.times.10.sup.13 atoms/cm.sup.3 or more,
nuclei of OSF are produced and diffused in an amount effective for
attaining homogeneous gettering in a single crystal. In addition,
when a Si epitaxial layer is formed on the surface of a slice
obtained from the single crystal, there is produced a wafer having
very few surface defects and exhibiting effective gettering action
in a step for producing a device.
[0020] The concentration of nitrogen doped into a wafer is
calculated from the amount of nitrogen doped in silicon before
pulling; the distribution of nitrogen in a silicon melt and in
solid; and the degree of solidification of the crystal. Briefly,
the initial concentration of nitrogen in silicon, C.sub.0, is
calculated from the amount of silicon atoms in a raw material and
the amount of nitrogen atoms added, and the concentration of
nitrogen in the crystal C.sub.N is calculated by use of the
following equation (a):
C.sub.N=C.sub.0k(1-x).sup.k-1 (a)
[0021] wherein k is the equilibrium segregation coefficient of
nitrogen, which is 7.times.10.sup.-4, and x is the degree of
solidification, which is represented by the weight of the pulled
portion of a crystal divided by an initial charge weight.
[0022] The above-described gettering method is particularly
effective for wafers used in a p-, n-, or n+ device in which
precipitate nuclei for forming sinks are easily extinguished by a
step for forming an epitaxial layer. In addition, the method is
also effective for a p+ wafer doped at high concentration with
boron which getters Fe and effectively getters an element other
than Fe.
[0023] The gettering effect for the epitaxial-layer-formed wafer is
evaluated by MOS generation lifetime. The present inventors have
conducted further, detailed investigation of wafers exhibiting
excellent results among the thus-nitrogen-doped wafers, and have
found that generation of OSF is observed at a density of
10.sup.2/cm.sup.2 or more at a surface of substrate after a thermal
oxidation treatment. Briefly, when a single crystal possesses
defect nuclei, which produce OSF at a certain density or more
through the thermal oxidation treatment, an excellent gettering
effect may be attained.
[0024] The epitaxial layer is preferably formed on a wafer, which
is heated to 1000.degree. C. or higher. When a wafer sliced from a
nitrogen-doped single crystal is heated to 1000.degree. C. or
higher, a temperature similar to that used for formation of the
epitaxial layer, defects are observed at a density of
5.times.10.sup.4/cm.sup.2 or more in a cross-section. Such defects
serve as sinks for gettering to thereby enhance the gettering
effect of a wafer, and are obtained from defects nuclei generated
in a single crystal by nitrogen doping.
[0025] However, a variety of device processes are carried out after
an epitaxial process, and the history of the heat treatment of a
wafer varies in accordance with the device processes, such as a
low-temperature device process which is mainly carried out at a
temperature of 800.degree. C. or less, and a high-temperature
device process which is mainly carried out at a temperature greater
than 800.degree. C. When a low-temperature device process is
employed, oxide precipitate nuclei, which are not extinguished
during an epitaxial process but remain thereafter, grow at a speed
lower than that in the case of a high-temperature device process,
to thereby yield insufficient gettering capability. In order to
solve the problem, the present inventors have found that carbon or
boron, which enhance the formation rate and the growth rate of
oxide precipitates, is doped in addition to nitrogen even in a
low-temperature device process, to thereby ensure excellent
gettering capability.
[0026] The present invention has been accomplished based on this
finding, and comprises three aspects, i.e., (1) a silicon single
crystal, (2) a silicon wafer, and (3) an epitaxial wafer.
[0027] Accordingly, in aspect (1) of the present invention, there
is provided a silicon single crystal suitable for production of an
epitaxial wafer characterized in that the single crystal is grown
with nitrogen doping at a concentration of 1.times.10.sup.13
atoms/cm.sup.3 or more, or with nitrogen doping at a concentration
of 1.times.10.sup.12 atoms/cm.sup.3 and carbon doping at a
concentration of 0.1.times.10.sup.16-5.times.10.sup.16
atoms/cm.sup.3 and/or boron doping at a concentration of
1.times.10.sup.17 atoms/cm.sup.3 or more.
[0028] In aspect (2) of the present invention, there is provided a
silicon wafer that is produced by slicing the silicon single
crystal described in aspect (1).
[0029] In aspect (3) of the present invention, there is provided an
epitaxial wafer in which an epitaxial layer is grown on a surface
of the silicon wafer described in aspect (2).
[0030] Preferably, the epitaxial wafer has an oxygen concentration
of 12.times.10.sup.17 atoms/cm.sup.3 or more when the wafer is
subjected to a device process carried out at 1100.degree. C. or
higher after epitaxial growth.
[0031] Preferably, the epitaxial wafer is characterized in that an
epitaxial layer is grown on a surface of a single crystal wafer
which is sliced from a silicon single crystal grown accompanied by
nitrogen doping and generates OSF at a density of
1.times.10.sup.2/cm.sup.2 or more through a thermal oxidation
treatment.
[0032] Preferably, the epitaxial wafer is characterized in that a
single crystal wafer is sliced from a silicon single crystal grown
accompanied by nitrogen doping and generates defects at a
cross-sectional density of 5.times.10.sup.4/cm.sup.2 or more before
epitaxial growth and the epitaxial wafer generates defects at a
cross-sectional density of 1.times.10.sup.4/cm.sup.2 or more
through a thermal treatment carried out at 1000.degree. C. or
higher.
[0033] Preferably, an epitaxial layer is grown on a silicon wafer
which is sliced from a silicon single crystal grown accompanied by
nitrogen doping at a concentration of 1.times.10.sup.12
atoms/cm.sup.3 or more when the epitaxial layer is subjected to a
high-temperature device process carried out at a temperature
substantially higher than 800.degree. C. after epitaxial
growth.
BRIEF DESCRIPTION OF THE DRAWING
[0034] Various other objects, features, and many of the attendant
advantages of the present invention will be readily appreciated as
the same becomes better understood with reference to the following
detailed description of the preferred embodiments when considered
in connection with an accompanying drawing, in which:
[0035] FIG. 1 shows changes in density distribution of OSF in a
wafer with an increase in the concentration of nitrogen doping;
[0036] FIG. 2 shows that the density of OSF in a single crystal
axis direction is enhanced and that the density distribution
thereof becomes more uniform with an increase in the concentration
of nitrogen doping;
[0037] FIG. 3 shows crystal defect distribution both on the surface
and within (along a cross-section) of an obtained epitaxial
wafer;
[0038] FIG. 4 shows a temperature profile pattern corresponding to
steps for producing a device used in order to evaluate the
gettering capability of a wafer;
[0039] FIG. 5 shows changes in MOS generation lifetime for
production of wafers having a variety of nitrogen doping
concentrations;
[0040] FIG. 6 shows defect densities in a cross-section of wafers
before and after epitaxial growth as measured in Example 4;
[0041] FIG. 7 shows defect densities in a cross-section of wafers
before and after epitaxial growth as measured in Example 5; and
[0042] FIG. 8 shows yield of gate oxide integrity.
DESCRIPTION OF PREFERRED EMBODIMENTS
[0043] When a silicon single crystal is doped with only nitrogen,
the nitrogen doping concentration is regulated to 1.times.10.sup.13
atoms/cm.sup.3 or more. When the concentration is less, the
increase in the width of OSF rings is insufficient and sinks for
gettering are not dispersed homogeneously. No particular upper
limit is imposed on the doping concentration, and it is preferably
about 4.5.times.10.sup.15 atoms/cm.sup.3, in that overdoping leads
to easy formation of polycrystal.
[0044] When a wafer doped only with nitrogen is subjected to a
low-temperature device process, growth of precipitate nuclei, which
are not extinguished during an epitaxial process but remain
afterward, is significantly suppressed. However, carbon or boron,
which enhance formation rate and growth rate of oxide precipitates
at low temperature, is doped in addition to nitrogen to thereby
promote formation and growth of precipitate nuclei. In order to
ensure the effect, nitrogen is doped at a concentration of
1.times.10.sup.12 atoms/cm.sup.3 and carbon is doped at a
concentration of 0.1.times.10.sup.16-5.times.10.sup.16
atoms/cm.sup.3 and/or boron is doped at a concentration of
1.times.10.sup.17 atoms/cm.sup.3 or more. No particular upper limit
is imposed on the boron doping concentration, and it is preferably
about 1.times.10.sup.20 atoms/cm.sup.3 in that doping at a very
high concentration decreases the size of oxide precipitates to
thereby cause deterioration of a gettering effect.
[0045] No particular limitation is imposed on the method for doping
so long as doping at predetermined concentrations of nitrogen,
carbon, and boron can be performed. Although several examples of a
method for nitrogen doping have conventionally been known, examples
herein include adding a nitride into a raw material or melt;
incorporating nitrogen into a silicon crystal or silicon nitride
film-coated wafer through a floating zone (FZ) method involving
nitrogen; growing a single crystal in a furnace where nitrogen or a
nitrogen compound gas flows; spraying nitrogen or a nitrogen
compound to polycrystalline silicon at high temperature before
melting; and making use of a crucible produced from nitride.
[0046] The above-described nitrogen-doped single crystal is sliced,
and an epitaxial layer is formed on the polished and cleaned slice
to thereby produce an epitaxial wafer. The method for forming an
epitaxial layer is not particularly limited, and any method, such
as thermal decomposition for vapor phase growth, may be employed so
long as it can provide an epitaxial layer without crystal
defects.
[0047] Thus, doping with nitrogen solely or with nitrogen and
carbon and/or boron simultaneously enables homogeneous dispersion,
throughout an entire wafer, of stable defects serving as sinks for
gettering. The number of the defects depends on the content of
oxygen or other impurity or on a condition for growing a single
crystal. In an epitaxial wafer, since a device active region is
limited, the wafer substrate must have a sufficient defect
density.
[0048] The present inventors have investigated the number of
defects from the above-described viewpoints, and have found that a
wafer in which OSFs are produced at a surface density of
1.times.10.sup.2/cm.sup.2 or more due to a thermal oxidation
treatment is suitably used, in view of attainment of a more stable
gettering effect. The suitable number of defects may also be
detected by observing a cross-section of a wafer after formation of
an epitaxial layer. In this case, the number of defects observed is
preferably 5.times.10.sup.4/cm.sup.2 or more after a heat treatment
at 1000.degree. C. or higher, which is preferable for growing an
epitaxial layer. When a wafer is subjected to a device process
involving a temperature of 1100.degree. C. or higher, oxygen
concentration is preferably 12.times.10.sup.17 atoms/cm.sup.3.
EXAMPLES
[0049] In order to clarify the effects of the present invention,
examples will next be provided. Examples 1-3 are drawn to the case
in which doping was carried out with nitrogen alone during growth
of a single crystal, and Examples 4-6 are drawn to the case in
which doping was carried out with nitrogen and carbon and/or boron
during growth of a single crystal.
Example 1
[0050] According to the Czochralski method, a single crystal was
grown in the following manner; i.e., highly pure poly-crystalline
silicon (50 kg) was melted in a quartz crucible along with boron
serving as a dopant, and the single crystal having a diameter of
150 mm and a crystal orientation of <100> was pulled at a
pulling speed of 0.6 mm/min.
[0051] First, in order to clarify the effect of nitrogen, nitrogen
gas was blown into the crucible at a rate of 10 l/min in order to
increase nitrogen concentration in the crystal during the crystal
growth step, when a single crystal was grown to a length of 300 mm
below a shoulder. Next, in order to easily assume a nitrogen doping
concentration, three grades of nitrogen-doped single crystals
having respective doping concentrations of 10.sup.12
atoms/cm.sup.3, 10.sup.13 atoms/cm.sup.3, and 10.sup.14
atoms/cm.sup.3 were grown by melting a silicon wafer having a
silicon nitride layer possessing a predetermined nitrogen content
together with highly pure poly-crystalline silicon serving as a raw
material, while nitrogen gas was not blown while the crystal was
pulled from the crucible.
[0052] Wafer specimens were sliced from the thus-obtained single
crystal along the plane perpendicular to the crystal axis and
subjected to heat oxidation in an oxygen atmosphere at 1100.degree.
C. for 16 hours. Thereafter, the specimens were subjected to
selective etching in a wright etchant for 5 minutes, and OSF
density was measured under an optical microscope.
[0053] FIG. 1 shows distributions of OSF density in specimens at
various locations of the pulled single crystal after nitrogen gas
was doped at various doping concentrations. The figure indicates
the distribution of OSF density at various radial distances from
the center of the single crystal. In general, OSFs usually locate
in a concentric ring zone centered on the axis of the crystal. The
specimens at the distance of 100 mm below a shoulder are not doped
with nitrogen, whereas at longer distances, e.g.; 400 mm and 700 mm
below the shoulder, the nitrogen doping progresses, resulting in
wider distribution of OSFs over the specimens and an increase in
OSF density.
[0054] FIG. 2 shows OSF density distributions at various lengths
along the crystal growth axis at various nitrogen doping
concentrations in the grown crystals. In the figure, the y-axis
indicates average values of the OSF densities measured at various
locations at radial intervals of 10 mm from the center of the
crystal axis. As is clear from the figure, when the nitrogen doping
concentration is 10.sup.12 atoms/cm.sup.3, OSF density decreases
with the progress of single crystal growth. However, when the
nitrogen doping concentration is 10.sup.13 atoms/cm.sup.3, OSF
density decreases little to remain relatively high. When the
nitrogen doping concentration is 10.sup.14 atoms/cm.sup.3, OSF
density remains high along the entire crystal growth axis and the
distribution is uniform throughout the specimen.
Example 2
[0055] On the single crystal silicon wafer doped with nitrogen at a
concentration of 10.sup.14 atoms/cm.sup.3 in Example 1, an
approximately 5-.mu.m-thick epitaxial layer was formed at a
deposition temperature of 1150.degree. C. The thus-obtained wafer
was then subjected to selective etching in a wright etchant for 5
minutes. The defect densities on the surface and the cross sections
of the epitaxial layer were determined under an optical
microscope.
[0056] FIG. 3 shows the defect densities on the surface and cross
sections at various radial distances from the center of the
specimens. After formation of the epitaxial layer, defects are
present at a density of approximately 1.times.10.sup.4/cm.sup.2
along the cross sections of nitrogen-doped single crystal silicon
wafer under the epitaxial layer. This indicates that oxide
precipitates may not be diminished during formation of the
epitaxial layer at high temperature. However, defects were observed
on neither the surface nor the cross section of the epitaxial
layer. It is confirmed that there is no growth of stacking faults
in the underlayer single crystal portion into the epitaxial layer
serving as an active region of a device.
Example 3
[0057] Nitrogen doping was carried out at respective concentrations
of 0, 10.sup.12 atoms/cm.sup.3, 10.sup.13 atoms/cm.sup.3, and
10.sup.14 atoms/cm.sup.3, on two types of wafer substrates; more
specifically, on a wafer substrate having a high electric
resistance of 10 .OMEGA..multidot.cm and on a wafer substrate
having a low electric resistance of 0.008 .OMEGA..multidot.cm. From
the thus-obtained eight types of single crystals, wafer substrates
were sliced and subjected to deposition at 1150.degree. C. to form
an epitaxial layer having a thickness of approximately 5 .mu.m.
[0058] These wafers were contaminated with a 3 ppm aqueous solution
of Cu(NO.sub.3).sub.2 by use of a spin coater, then subjected to a
heat treatment in a dry oxygen atmosphere as a model treatment
simulating the device production process, to thereby investigate
the change in the gettering effect during heat treatment.
[0059] FIG. 4 shows a temperature-time profile of the model heat
treatment. At the three time points, A, B, and C in FIG. 4, the
wafers were removed in order to determine a gettering effect
corresponding to the progress of the treatment. The gettering
effect was evaluated by the following steps: a thermally oxidized
layer was removed by use of hydrofluoric acid; the treated wafer
was oxidized in a dry oxygen atmosphere at 1000.degree. C. for two
hours to form a gate oxide film having a thickness of approximately
75 nm; an Al film having a thickness of 500 nm was deposited on the
wafer through vapor deposition; the Al-coated wafer was sintered at
450.degree. C. for 30 minutes to thereby produce a gate electrode
having a guard electrode and a size of 1 mm.times.1 mm; and MOS
generation lifetime was measured.
[0060] FIG. 5 shows the results of measurement of MOS generation
lifetime. Wafers, which had not been doped with nitrogen, exhibited
a short lifetime, which was determined immediately after formation
of an epitaxial layer. Although the lifetime became longer with the
progress of the heat treatment, it was still insufficient. On the
other hand, wafers of single crystals doped with nitrogen at a
concentration of 10.sup.13 atoms/cm.sup.3 and those doped with
nitrogen at a concentration of 10.sup.14 atoms/cm.sup.3
consistently exhibited a long lifetime of MOS through the device
production process. Wafers doped with nitrogen at a concentration
of 10.sup.12 atoms/cm.sup.3 exhibited values similar to those of
non-doped wafers. In contrast, as shown in FIG. 2 of Example 1, a
wafer doped with nitrogen at a concentration of 10.sup.13
atoms/cm.sup.3 exhibited almost the same gettering effect as that
of a wafer doped at a concentration of 10.sup.14 atoms/cm.sup.13;
nevertheless, the OSF density of a wafer doped at a concentration
of 10.sup.13 atoms/cm.sup.3 was lower than that of a wafer doped at
a concentration of 10.sup.14 atoms/cm.sup.3. Doping at a
concentration of 10.sup.13 atoms/cm.sup.3 or more can presumably
form sufficient sinks for gettering. Moreover, no significant
difference in gettering effect between p/p.sup.- and p/p.sup.+ was
observed. Therefore, the gettering effect of the epitaxial wafer,
which was obtained by nitrogen doping, is clearly independent of
the electrical resistance of the wafer.
Example 4
[0061] In Example 4, defect densities along cross sections were
evaluated for silicon wafers prepared from silicon single crystals
having various nitrogen doping concentrations, as well as for the
wafers subjected to an epitaxial growth treatment. In order to
clarify the effect of nitrogen doping, silicon wafers having
resistivities of 10 .OMEGA..multidot.cm and 0.05
.OMEGA..multidot.cm which were doped with nitrogen at
concentrations of 3.times.10.sup.12 atoms/cm.sup.3 and
5.times.10.sup.13 atoms/cm.sup.3 were prepared in order to serve as
specimens for Examples of the present invention, icon wafers having
a resistivity of 10 .OMEGA..multidot.cm and doped with nitrogen
concentrations of 0 atoms/cm.sup.3 and 8.times.10.sup.11
atoms/cm.sup.3 were prepared in order to specimens for Comparative
Examples.
[0062] Furthermore, in order to confirm the effect of simultaneous
doping with nitrogen and carbon and/or boron, silicon wafers doped
with nitrogen and carbon; silicon wafers doped with nitrogen and
boron; and silicon wafers doped with nitrogen, carbon, and boron at
predetermined concentrations were prepared and served as specimens
for Examples of the present invention. The features of wafer levels
for these wafers for Examples and Comparative Examples of the
present invention are shown in Table 1.
1TABLE 1 Wafer Doping Concentration (atoms/cm.sup.3) Note Level
Nitrogen Carbon Boron (Example) 1 0 -- 1.3 .times. 10.sup.15
Comparative Example 2 8 .times. 10.sup.11 -- 1.3 .times. 10.sup.15
Comparative Example 3 3 .times. 10.sup.12 -- 1.3 .times. 10.sup.15
Present Invention 4 5 .times. 10.sup.13 -- 1.3 .times. 10.sup.15
Present Invention 5 3 .times. 10.sup.12 3 .times. 10.sup.16 1.3
.times. 10.sup.15 Present Invention 6 5 .times. 10.sup.13 3 .times.
10.sup.16 1.3 .times. 10.sup.15 Present Invention 7 3 .times.
10.sup.12 -- 8 .times. 10.sup.17 Present Invention 8 5 .times.
10.sup.13 -- 8 .times. 10.sup.17 Present Invention 9 3 .times.
10.sup.12 3 .times. 10.sup.16 8 .times. 10.sup.17 Present Invention
10 5 .times. 10.sup.13 3 .times. 10.sup.16 8 .times. 10.sup.17
Present Invention
[0063] The thus-prepared silicon wafer specimens were subjected to
an epitaxial growth treatment carried out at a deposition
temperature of 1150.degree. C. to form an epitaxial layer having a
thickness of approximately 5 .mu.m. Subsequently, the wafers were
heated at 1000.degree. C. for 16 hours in an oxygen atmosphere. The
thus-obtained specimens were subjected to selective etching in a
wright etchant for 5 minutes, and the cross-sectional defect
densities of the epitaxial wafers and silicon wafers were measured
under an optical microscope.
[0064] FIG. 6 shows the defect densities along cross sections of
the wafers before and after epitaxial growth treatment. As is clear
from FIG. 6, the wafer, which had not been doped with nitrogen
(wafer level 1), has no defects, whereas the nitrogen-doped wafers
have defects. The nitrogen-doped wafers have defects along cross
sections of a layer under the epitaxial layer, and the defect
density increases with nitrogen concentration. On the basis of the
results, it is assumed that in the non-doped wafer, precipitates
nuclei which formed during growth of the single crystal were
extinguished and could not grow during heat treatment at
1000.degree. C., whereas in the nitrogen-doped wafers, oxygen
precipitates formed during growth of the single crystal became
difficult to extinguish and became large to an observable size
through heat treatment at 1000.degree. C.
[0065] When the wafers were doped with nitrogen and carbon and/or
boron, the defect densities were almost the same as those of wafers
doped solely with nitrogen. Although Example 4 used wafers whose
oxygen concentrations were modified within the range of
11.times.10.sup.17-15.times.10.sup.17 atoms/cm.sup.3, defect
density exhibited no dependence on oxygen concentration. Therefore,
when a heat treatment is carried out at 1000.degree. C. as in
Example 4, defect density is not dependent on oxygen
concentration.
[0066] Furthermore, it is apparent that the defect density can be
determined from the density of doped nitrogen, so long as an
experiment is carried out under the same conditions as those of
Example 4. A wafer having a high nitrogen concentration is
suitable, in view of a gettering effect. A target defect density
along a cross section of epitaxial wafers after a heat treatment at
1000.degree. C. is 1.times.10.sup.4/cm.sup.2 or more. When heat
treatment at 1000.degree. C. is carried out before epitaxial
growth, the target defect density is 5.times.10.sup.4/cm.sup.2 or
more.
[0067] The quality of the epitaxial layers is confirmed. That is,
no defects were observed on a surface or along cross sections of
the epitaxial layers, and no growth of defects was observed from a
single crystal portion in a layer under the epitaxial layer into
the epitaxial layer serving as an active region of a device.
Example 5
[0068] In Example 5, high-temperature heat treatment was carried
out in order to clarify the effect of high-temperature heat
treatment on defect density. Wafer levels are same as those in
Table 1. Thus, a wafer containing oxygen at a concentration of
11.times.10.sup.17 atoms/cm.sup.3 and a wafer containing oxygen at
a concentration of 14.times.10.sup.17 atoms/cm.sup.3 were prepared.
The wafers were subjected to an epitaxial growth treatment at a
deposition temperature of 1150.degree. C. to thereby obtain an
epitaxial layer having a thickness of approximately 5 .mu.m.
Thereafter, the treated wafers were treated at a temperature higher
than that of Example 4; i.e., at 1100.degree. C., for 16 hours in
an oxygen atmosphere. The thus-obtained wafers were subjected to
selective etching in a wright etchant to thereby measure the defect
density along cross sections of epitaxial and silicon wafers.
[0069] FIG. 7 shows the defect density along cross sections of
wafers before and after an epitaxial growth treatment. As shown in
FIG. 7, no defects were observed on the wafers containing oxygen at
a concentration of 11.times.10.sup.17 atoms/cm.sup.3 for all wafer
levels, whereas defects at densities of 1.times.10.sup.4/cm.sup.2
or more were observed along the cross sections of both epitaxial
and silicon wafers when the oxygen concentration of wafers was
14.times.10.sup.17 atoms/cm.sup.3. Defect densities were also
investigated for wafers having other oxygen concentrations. It is
confirmed that defect density of 1.times.10.sup.4/cm.sup.2 or more
is observed when oxygen concentration is 12.times.10.sup.17
atoms/cm.sup.3 or more.
[0070] As is clear from FIG. 7, preferably, the higher the
temperature used in a device process, the higher the oxygen
concentration. Specifically, when a device process is carried out
at 1100.degree. C. or higher, a wafer having an oxygen
concentration of 12.times.10.sup.17 atoms/cm.sup.3 or higher is
preferably employed.
Example 6
[0071] In Example 6, a gettering effect was evaluated by use of the
same wafers as used in Example 4. Thus, an epitaxial growth
treatment was carried out under the same conditions as in Example
4. The resultant epitaxial wafers were subjected to a
high-temperature process substantially involving a temperature of
greater of 800.degree. C., or by a low-temperature process mainly
involving a temperature of 800.degree. C. or lower. Wafer levels of
the wafers employed for the above-described high and low
temperature processes are shown in Table 2.
2TABLE 2 Wafer Device Doping Concentration (atoms/cm.sup.3) Note
Level Process Nitrogen Carbon Boron (Example) 1 High- 0 -- 1.3
.times. 10.sup.15 Comparative Example 2 temperature 8 .times.
10.sup.11 -- 1.3 .times. 10.sup.15 Comparative Example 3 process 3
.times. 10.sup.12 -- 1.3 .times. 10.sup.15 Present Invention 4 5
.times. 10.sup.13 -- 1.3 .times. 10.sup.15 Present Invention 5 0 --
1.3 .times. 10.sup.15 Comparative Example 6 8 .times. 10.sup.11 --
1.3 .times. 10.sup.15 Comparative Example 7 3 .times. 10.sup.12 --
1.3 .times. 10.sup.15 Present Invention 8 Low- 5 .times. 10.sup.13
-- 1.3 .times. 10.sup.15 Present Invention 9 temperature 3 .times.
10.sup.12 3 .times. 10.sup.16 1.3 .times. 10.sup.15 Present
Invention 10 process 5 .times. 10.sup.13 3 .times. 10.sup.16 1.3
.times. 10.sup.15 Present Invention 11 3 .times. 10.sup.12 -- 8
.times. 10.sup.17 Present Invention 12 5 .times. 10.sup.13 -- 8
.times. 10.sup.17 Present Invention 13 3 .times. 10.sup.12 3
.times. 10.sup.16 8 .times. 10.sup.17 Present Invention 14 5
.times. 10.sup.13 3 .times. 10.sup.16 8 .times. 10.sup.17 Present
Invention
[0072] Subsequently, thermal oxide film formed on the heat-treated
wafers was removed by hydrofluoric acid, and the wafer surface was
contaminated with 10.sup.12/cm.sup.2 of Ni, which was diffused into
the wafer through heat treatment at 1000.degree. C. for one hour.
Thereafter, the wafers were oxidized at 950.degree. C. for 40
minutes in a dry oxygen atmosphere, to thereby form a gate oxide
film having a thickness of 25 nm thereon. A poly-silicon film
having a thickness of 400 nm was formed through CVD on the gate
oxide film, and doped with phosphorus through a vapor phase
diffusion method, to thereby serve as an electrode. The wafer
surface was patternwise divided into areas of 8 mm.sup.2, and
gettering effect was evaluated based on the yield of gate oxide
integrity.
[0073] FIG. 8 shows yield of gate oxide integrity as measured in
Example 6. When wafers were subjected to a high-temperature
process, all the wafers doped in the manner according to the
present invention; i.e., with nitrogen at a concentration of
1.times.10.sup.12 atoms/cm.sup.3 or more, exhibited yield of
approximately 100%. In contrast, wafers of the Comparative Examples
exhibited poor ratio of 0-30%. The results indicate that wafers
doped with nitrogen at a concentration of 1.times.10.sup.12
atoms/cm.sup.3 or more exhibit an excellent gettering effect to a
high-temperature process.
[0074] Meanwhile, when wafers were subjected to a low-temperature
process, the yield obtained in the Comparative Examples was about
0-20%. In contrast, wafers doped with nitrogen at a concentration
of 1.times.10.sup.12 atoms/cm.sup.3 or more showed yield of
approximately 80% among the wafers obtained in the Examples.
Furthermore, wafers doped simultaneously with nitrogen and carbon
and/or boron showed yield of approximately 100%. These results
indicate that wafers doped with nitrogen a concentration of
1.times.10.sup.12 atoms/cm.sup.3 or more, as specified by the
present invention, exhibit an excellent gettering effect to a
low-temperature process as compared with the non-doped wafers of
the Comparative Examples. However, the gettering effect is slightly
inferior to that obtained by simultaneous doping with nitrogen and
carbon and/or boron.
[0075] The higher the density of oxide precipitates, the more
effective the gettering. However, growth of oxide precipitates is
suppressed during a low-temperature process. Consequently, the
wafers of the Comparative Examples (wafer levels 5 and 6) have a
defect density of 10.sup.3/cm.sup.2 or less, and the wafers doped
with nitrogen at a concentration of 1.times.10.sup.12
atoms/cm.sup.3 or more (wafer levels 7 and 8) have a defect density
of approximately 10.sup.5/cm.sup.2, while the wafers (wafer levels
9 through 14) have a defect density of 10.sup.6/cm.sup.2 or more.
The difference in defect density reflects the gettering effect and
is attributed to the presence of carbon and boron, which have an
effect for enhancing the density of oxide precipitates during a
low-temperature process at 800.degree. C. or lower.
[0076] As apparent from Example 6, the wafers according to the
present invention that are doped with nitrogen at a concentration
of 1.times.10.sup.12 atoms/cm.sup.3 or more have a gettering effect
in a high-temperature process more excellent than that of
conventional wafers. Furthermore, the wafers according to the
present invention that are doped simultaneously with nitrogen and
carbon and/or boron also have an excellent gettering effect during
a low-temperature process.
[0077] As described hereinabove, the silicon single crystal,
silicon wafer, and epitaxial wafer according to the present
invention provide a stable gettering effect during any device
process involving any temperature profile, by forming oxide
precipitates which are not extinguished even during a
high-temperature epitaxial process without performance of an
extrinsic or intrinsic gettering treatment, which is a factor for
increasing costs.
* * * * *