Horai; Masataka

Patent Applications and Registrations

Patent applications and USPTO patent grants for Horai; Masataka.The latest application filed is for "high-resistance silicon wafer and process for producing the same".

Company Profile

0.6.8

Horai; Masataka - Tokyo JP
Horai; Masataka - Saga JP
Horai, Masataka - Ogi-gun JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High-resistance silicon wafer and process for producing the same Grant 7,316,745 - Sadamitsu , et al. January 8, 2	2008-01-08
High-resistance silicon wafer and process for producing the same App 20050250349 - Sadamitsu, Shinsuke ; et al.	2005-11-10
Silicon single crystal, silicon wafer, and epitaxial wafer Grant 6,878,451 - Asayama , et al. April 12, 2	2005-04-12
Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor Grant 6,835,245 - Ono , et al. December 28, 2	2004-12-28
Method of making an epitaxial wafer App 20040216659 - Asayama, Eiichi ; et al.	2004-11-04
Method of producing epitaxial wafers Grant 6,709,957 - Asayama , et al. March 23, 2	2004-03-23
Silicon single crystal, silicon wafer, and epitaxial wafer. Grant 6,641,888 - Asayama , et al. November 4, 2	2003-11-04
Silicon single crystal, silicon wafer, and epitaxial wafer App 20030175532 - Asayama, Eiichi ; et al.	2003-09-18
Silicon wafer and epitaxial silicon wafer App 20030104222 - Ono, Toshiaki ; et al.	2003-06-05
Method of producing epitaxial wafers App 20030008447 - Asayama, Eiichi ; et al.	2003-01-09
Silicon single crystal, silicon wafer, and epitaxial wafer App 20020142171 - Asayama, Eiichi ; et al.	2002-10-03
Silicon single crystal, silicon wafer, and epitaxial wafer App 20020142170 - Asayama, Eiichi ; et al.	2002-10-03
Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor App 20020017234 - Ono, Toshiaki ; et al.	2002-02-14
Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants Grant 5,508,207 - Horai , et al. April 16, 1	1996-04-16

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