Asayama; Eiichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Asayama; Eiichi.The latest application filed is for "method for growing silicon single crystal".

Company Profile

0.5.8

Asayama; Eiichi - Tokyo JP
Asayama; Eiichi - Saga JP
Asayama, Eiichi - Saga-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for growing silicon single crystal Grant 7,014,704 - Ono , et al. March 21, 2	2006-03-21
Silicon single crystal, silicon wafer, and epitaxial wafer Grant 6,878,451 - Asayama , et al. April 12, 2	2005-04-12
Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor Grant 6,835,245 - Ono , et al. December 28, 2	2004-12-28
Method for growing silicon single crystal App 20040244674 - Ono, Toshiaki ; et al.	2004-12-09
Method of making an epitaxial wafer App 20040216659 - Asayama, Eiichi ; et al.	2004-11-04
Method of producing epitaxial wafers Grant 6,709,957 - Asayama , et al. March 23, 2	2004-03-23
Silicon single crystal, silicon wafer, and epitaxial wafer. Grant 6,641,888 - Asayama , et al. November 4, 2	2003-11-04
Silicon single crystal, silicon wafer, and epitaxial wafer App 20030175532 - Asayama, Eiichi ; et al.	2003-09-18
Method of producing epitaxial wafers App 20030008447 - Asayama, Eiichi ; et al.	2003-01-09
Silicon single crystal, silicon wafer, and epitaxial wafer App 20020142170 - Asayama, Eiichi ; et al.	2002-10-03
Silicon single crystal, silicon wafer, and epitaxial wafer App 20020142171 - Asayama, Eiichi ; et al.	2002-10-03
Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor App 20020017234 - Ono, Toshiaki ; et al.	2002-02-14
Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer App 20020000189 - Tanaka, Tadami ; et al.	2002-01-03

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