U.S. patent application number 09/775295 was filed with the patent office on 2001-10-25 for magnetic barrier for plasma in chamber exhaust.
This patent application is currently assigned to Applied Materials, Inc.. Invention is credited to Carducci, James D., Lee, Evans Y., Luscher, Paul E., Noorbakhsh, Hamid, Salimian, Siamak, Shan, Hongqing, Welch, Michael D..
Application Number | 20010032591 09/775295 |
Document ID | / |
Family ID | 24227693 |
Filed Date | 2001-10-25 |
United States Patent
Application |
20010032591 |
Kind Code |
A1 |
Carducci, James D. ; et
al. |
October 25, 2001 |
Magnetic barrier for plasma in chamber exhaust
Abstract
The invention is a plasma reactor employing a chamber having a
process gas inlet and enclosing a plasma process region. The
reactor includes a workpiece support pedestal within the chamber
capable of supporting a workpiece at a processing location
interfacing with the plasma process region, the support pedestal
and the chamber defining an annulus therebetween to permit gas to
be evacuated therethrough from the plasma process region. One
aspect of the invention includes a ring horseshoe magnet adjacent
and about one side of the annulus, the magnet being spaced from the
plasma processing location by a spacing substantially greater than
the smallest distance across the annulus. The invention further
includes the magnet defining opposite poles which are substantially
closer together than the spacing of the magnet from the processing
location, the magnet being oriented to provide its maximum magnetic
flux across the annulus and a minimum of the flux at the plasma
processing location.
Inventors: |
Carducci, James D.;
(Sunnyvale, CA) ; Noorbakhsh, Hamid; (Fremont,
CA) ; Lee, Evans Y.; (Milpitas, CA) ; Shan,
Hongqing; (Cupertino, CA) ; Salimian, Siamak;
(Sunnyvale, CA) ; Luscher, Paul E.; (Sunnyvale,
CA) ; Welch, Michael D.; (Pleasanton, CA) |
Correspondence
Address: |
PATENT COUNSEL
APPLIED MATERIALS, INC.
Legal Affairs Department
P.O. Box 450A
Santa Clara
CA
95052
US
|
Assignee: |
Applied Materials, Inc.
|
Family ID: |
24227693 |
Appl. No.: |
09/775295 |
Filed: |
January 31, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09775295 |
Jan 31, 2001 |
|
|
|
09557990 |
Apr 25, 2000 |
|
|
|
Current U.S.
Class: |
118/723E ;
156/345.29 |
Current CPC
Class: |
H01J 37/3266 20130101;
H01J 37/32834 20130101; H01J 37/32623 20130101; C23C 16/4412
20130101 |
Class at
Publication: |
118/723.00E ;
156/345 |
International
Class: |
H01L 021/3065 |
Claims
What is claimed is:
1. A plasma reactor comprising: a chamber having a process gas
inlet and enclosing a plasma process region; a workpiece support
pedestal within said chamber capable of supporting a workpiece at a
processing location interfacing with said plasma process region,
said support pedestal and said chamber defining an annulus
therebetween to permit gas to be evacuated therethrough from said
plasma process region; and a ring horseshoe magnet adjacent and
about one side of the annulus, said magnet being spaced from said
plasma processing location by a spacing substantially greater than
the smallest distance across said annulus, said magnet defining
opposite poles which are substantially closer together than said
spacing of said magnet from said processing location, said magnet
oriented to provide its maximum magnetic flux across said annulus
and a minimum of said flux at said plasma processing location.
2. A plasma reactor comprising: a chamber having a process gas
inlet and enclosing a plasma process region; a workpiece support
pedestal within said chamber capable of supporting a workpiece at a
processing location interfacing with said plasma process region,
said support pedestal and said chamber defining an annulus
therebetween to permit gas to be evacuated therethrough from said
plasma process region; a ring horseshoe magnet adjacent and about
one side of the annulus, said magnet being spaced from said plasma
processing location by a spacing substantially greater than the
smallest distance across said annulus, said magnet defining
opposite poles which are substantially closer together than said
spacing of said magnet from said processing location, said magnet
being oriented to provide its maximum magnetic flux across said
annulus and a minimum of said flux at said plasma processing
location; said opposite poles being spaced similarly to or closer
together than said smallest distance across said annulus.
3. The reactor of claim 2, in which the magnetic flux across the
annulus from the magnet is greater by at least an order of
magnitude than that the processing location.
4. The reactor of claim 3, in which the magnet comprises at least
one ring magnet, with the remainder of the horseshoe being of
magnetically permeable material.
5. The reactor of claim 2, in which the magnet is located adjacent
a narrowest portion of the annulus.
6. The reactor of claim 2, in which the magnet is located within
the pedestal.
7. The reactor of claim 2 wherein said magnet arrangement is
adjacent an inner radius side of the annulus.
8. The reactor of claim 2 wherein said magnet arrangement is
adjacent an outer radius side of the annulus.
9. A plasma reactor comprising: a chamber having a process gas
inlet and enclosing a process region; a workpiece support pedestal
capable of supporting a workpiece at a processing location
interfacing with said process region, said support pedestal and
said chamber defining an annulus therebetween to permit gas to be
evacuated therethrough from said process region; a ring horseshoe
magnet adjacent and about one side of the annulus and oriented to
provide its maximum magnetic flux across said annulus and a minimum
of said flux at said processing location, said horseshoe magnet
being displaced from said processing location by a distance
substantially greater than the smallest distance across said
annulus.
10. A plasma reactor comprising: a chamber having a process gas
inlet and enclosing a process region; a workpiece support pedestal
capable of supporting a workpiece at a processing location
interfacing with said process region, said support pedestal and
said chamber defining an annulus therebetween to permit gas to be
evacuated therethrough from said process region; a ring horseshoe
magnet adjacent and about one side of the annulus and oriented to
provide its maximum magnetic flux across said annulus and a minimum
of said flux at said processing location, said horseshoe magnet
being displaced from said processing location by a distance
substantially greater than the smallest distance across said
annulus; wherein the spacing between opposing poles of said
horseshoe magnet is substantially less than the distance of said
horseshoe magnet from the processing location.
11. A plasma reactor comprising: a chamber having a process gas
inlet and enclosing a process region; a workpiece support pedestal
capable of supporting a workpiece at a processing location
interfacing with said process region, said support pedestal and
said chamber defining an annulus therebetween to permit gas to be
evacuated therethrough from said process region; a ring horseshoe
magnet adjacent and about one side of the annulus and oriented to
provide its maximum magnetic flux across said annulus and a minimum
of said flux at said processing location, said horseshoe magnet
being displaced from said processing location by a distance
substantially greater than the smallest distance across said
annulus; wherein the spacing between opposing poles of said
horseshoe magnet is substantially less than the distance of said
horseshoe magnet from the processing location and is similar to or
less than said smallest distance across said annulus.
12. The reactor of claim 11 wherein: said annulus is defined by
opposed chamber and pedestal walls; and said horseshoe is located
within one of said walls.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of U.S. application Ser.
No. 09/557,990, filed Apr. 25, 2000 by James Carducci et al. and
entitled "Magnetic Barrier for Plasma in Chamber Exhaust".
FIELD OF THE INVENTION
[0002] The invention relates generally to plasma chambers used in
processes for manufacturing semiconductors and other electronic
devices. More specifically, the invention relates to apparatus and
methods for preventing plasma within the chamber from extending
through the exhaust passage or exhaust channel that couples the
chamber to an exhaust pump.
BACKGROUND OF THE INVENTION
[0003] The series of process steps used to fabricate semiconductors
and other electronic devices commonly include various plasma
processes for depositing or etching films. Such plasma processes
generally are performed within a vacuum chamber whose interior is
maintained at a low pressure by an exhaust pump. The pump is
coupled to the chamber interior via an exhaust channel.
[0004] There are several reasons that is important to prevent the
plasma within the chamber from extending through the exhaust
channel to the exhaust pump.
[0005] One reason is that a plasma that extends a considerable
distance through the exhaust channel typically is unstable, which
causes the main plasma body adjacent the workpiece to be unstable,
as evidenced by visible flickering of the light emitted by the
plasma. Such instability produces unacceptable non-uniformities in
the plasma process.
[0006] A second reason it is important to block the plasma from
extending to the exhaust pump is to protect the pump from corrosion
or undesirable deposits. Any component surfaces near the plasma
body within a plasma chamber generally will be corroded due to
bombardment by ions from the plasma. In addition, many plasma
processes have byproducts which include reactive species that can
combine to form polymers or other undesirable deposits on
components within the chamber that are adjacent to the plasma body.
To prevent such corrosion and undesirable deposits, it is common
practice to cover with removable liners the surfaces of chamber
components that are exposed to or adjacent to the plasma body. The
liners are replaced periodically as they become corroded.
[0007] Typically it is impractical to provide easily replaceable
components for the exhaust pump. Therefore, a need exists for a
plasma chamber design that prevents the plasma within the chamber
from extending too close to the exhaust pump.
[0008] Commonly assigned U.S. Pat. No. 5,891,350, issued Apr. 6,
1999 to Shan et al., discloses a plasma chamber design that
prevents the plasma from reaching the exhaust pump by interposing a
long and sinuous exhaust passage between the chamber interior and
the pump. One disadvantage of this design is that the sinuous
exhaust passage creates a pressure drop between the chamber
interior and the pump. In some applications, this may require an
overly expensive pump to achieve a desired low chamber
pressure.
SUMMARY OF THE INVENTION
[0009] The invention is a plasma reactor employing a chamber having
a process gas inlet and enclosing a plasma process region. The
reactor includes a workpiece support pedestal within the chamber
capable of supporting a workpiece at a processing location
interfacing with the plasma process region, the support pedestal
and the chamber defining an annulus therebetween to permit gas to
be evacuated therethrough from the plasma process region. One
aspect of the invention includes a ring horseshoe magnet adjacent
and about one side of the annulus, the magnet being spaced from the
plasma processing location by a spacing substantially greater than
the smallest distance across the annulus. The invention further
includes the magnet defining opposite poles which are substantially
closer together than the spacing of the magnet from the processing
location, the magnet being oriented to provide its maximum magnetic
flux across the annulus and a minimum of the flux at the plasma
processing location.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] FIG. 1 is a plan view of a plasma etching chamber with an
exhaust manifold having an annular, U-shaped magnet system embedded
within an annular protrusion according to the invention.
[0011] FIG. 2 is a detail of the magnet system and annular
protrusions in the FIG. 1 chamber.
[0012] FIG. 3 is a perspective view of an annular, U-shaped magnet
system with magnetic poles facing radially outward.
[0013] FIG. 4 is a perspective view of a magnet system whose
magnets and pole pieces are interchanged relative to the embodiment
of FIG. 3.
[0014] FIG. 5 is a perspective view of an annular, U-shaped magnet
system with magnetic poles facing radially inward.
[0015] FIG. 6 is a perspective view of a magnet system whose
magnets and pole pieces are interchanged relative to the embodiment
of FIG. 5.
[0016] FIG. 7 is a detailed plan view of an exhaust manifold having
two annular magnets respectively embedded within two annular
protrusions according to the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0017] 1. Conventional Chamber Components
[0018] FIG. 1 shows one embodiment of the invention as applied to a
plasma chamber suitable for either etching or chemical vapor
deposition (CVD). The conventional components of the chamber will
be described before describing the novel features for preventing
the plasma from reaching the exhaust pump.
[0019] The illustrated chamber is cylindrical because it is adapted
for processing a circular workpiece such as a semiconductor wafer.
Alternatively, a chamber for processing a rectangular substrate
conventionally would have a rectangular transverse cross
section.
[0020] A cylindrical side wall 12, circular bottom wall 14, and
annular top wall or lid 16 provide a vacuum tight enclosure for the
chamber interior. A gas distribution plate 18, also called a
diffuser or shower head, is mounted at the bottom of the lid 16.
The gas distribution plate is perforated to function as a gas inlet
through which process gases enter the chamber. The side wall 12 may
be either dielectric or metal. If the side wall is metal, it will
function as an electrically grounded electrode unless it is covered
by sufficiently thick dielectric as explained below.
[0021] The semiconductor wafer or other workpiece 20 is mounted on,
or immediately above, a disc-shaped metal susceptor or pedestal 22,
which, in turn, is mounted in the lower end of the chamber. The
workpiece 20 typically is clamped or held against the upper surface
of the susceptor 22 by a conventional chuck such as a mechanical
clamping ring or an electrostatic chuck (not shown).
[0022] A vacuum pump 28 exhausts gases from the chamber through
annular exhaust manifold 30 and cylindrical pumping channel 32 so
as to reduce the total gas pressure in the chamber to a level
suitable for the plasma process intended to be performed in the
chamber, typically in the range of 10 millitorr to 20 torr, with
pressures at the lower and higher ends of the range being typical
for etching and CVD processes, respectively. A throttle valve 34 is
mounted within the pumping channel 32. The throttle valve regulates
the gas pressure within the chamber by controlling the impedance to
gas flow within the pumping channel, thereby controlling the
pressure drop across the pumping channel as required to maintain
the desired chamber pressure.
[0023] In a capacitively coupled plasma chamber such as the one
illustrated in FIG. 1, energy is coupled to the plasma by a radio
frequency (RF) power supply connected directly to an electrode
within the chamber. Typically, the gas distribution plate 18 and
the susceptor 22 are electrically connected so as to function as
anode and cathode electrodes, respectively. Specifically, the RF
power supply, not shown, is connected to either the anode electrode
18 (commonly for plasma CVD) or to the cathode electrode 22
(commonly for reactive ion etching). The other electrode may be
connected to a second electrical power supply, or else it may be
electrically grounded. The RF power supply provides an RF voltage
between the cathode and anode electrodes that excites the gases
within the chamber into a plasma state.
[0024] As an alternative to capacitive coupling, any other
conventional means may be used to couple energy to the gases within
the chamber to form a plasma. For example, RF power may be
inductively coupled to the chamber interior, or microwave power may
be coupled via a microwave wave guide connected to the chamber.
[0025] Surfaces of chamber components that are exposed to the
plasma within the chamber generally suffer corrosion or an
accumulation of undesirable residue during operation of the plasma
chamber. To minimize the need to clean or replace major chamber
components, such components commonly are covered by a liner or
shield that is easily removable for cleaning or replacement.
Specifically, in the preferred embodiment shown in FIG. 1, the
chamber side wall 12 is covered by a first cylindrical liner or
shield 36, also called the outer liner or outer shield. The
cylindrical outer wall of the susceptor 22 is covered by a second
cylindrical liner or shield 38, also called the inner liner or
susceptor shield. In addition, a workpiece shield ring 24 rests on
and covers the portion of the top surface of the susceptor that is
outside the perimeter of the wafer 20.
[0026] The inner liner 38 includes an annular flange 40 that
extends radially outward from the lower end of the inner liner 38
and rests on the chamber bottom wall 14. The flange 40 covers and
protects the surface of the chamber bottom wall that otherwise
would be exposed to the interior of the exhaust manifold 30. The
inner liner 38 is held in place by the weight of the outer
dielectric liner 36. An O-ring 37 provides a seal between the inner
and outer liners.
[0027] Each of the shields 36, 38 and 24 should be resistant to
corrosion by the plasma and by the gas chemistries anticipated to
be used in the chamber. In the illustrated plasma chamber used for
reactive ion etching, the outer and inner liners 36 and 38 are
anodized aluminum and the workpiece shield ring 24 is quartz.
[0028] However, the bottom surface of the flange 40 is bare
aluminum rather than being anodized. The bare aluminum provides
consistently good electrical contact between the inner liner 38 and
the electrically grounded chamber bottom wall 14, thereby providing
more consistent performance of the semiconductor fabrication
process performed in the chamber than would be possible if an
anodized bottom surface of flange 40 provided inconsistent
electrical contact. Alternatively, as explained below, it may be
desirable to fabricate the susceptor shield of dielectric material.
In that case, there would be no issue of inconsistent electrical
contact with the inner liner.
[0029] O-ring 37 can stick to the outer and inner shields 36 and
38, making it difficult to separate the shields when they are being
replaced. If so, the sticking can be prevented by placing a thin,
aluminum ring (not shown) between the O-ring 37 and the bottom of
the outer shield 36.
[0030] The anodization on the surface of the outer and inner
shields 36 and 38 is a thin dielectric that reduces somewhat the RF
current flow between the plasma and the metal surfaces covered by
the shields. An even greater reduction in such current flow may be
desirable in order to concentrate the plasma in the region adjacent
the workpiece 20. This can be accomplished by fabricating the
shields entirely of dielectric material such as quartz rather than
anodized aluminum.
[0031] The inner liner 38 and the lower half of the outer liner 36
respectively function as the inner and outer walls of the annular
exhaust manifold 30. The annular flange 40 at the bottom of the
inner liner 38 includes an arcuate aperture 42, aligned with the
cylindrical pumping channel 32, to permit exhaust gases to flow
from the annular exhaust manifold, through the flange aperture 42,
and then through the cylindrical pumping channel 32 to the throttle
valve 34 and the pump 28.
[0032] The various chamber components described above are described
in more detail in commonly assigned U.S. Pat. No. 5,891,350, issued
Apr. 6, 1999 to Shan et al., the entire content of which is hereby
incorporated by reference into this patent specification.
[0033] The exhaust channel of the illustrated chamber includes an
annular exhaust manifold and a cylindrical pumping channel. The
annular exhaust manifold is coaxial with the chamber interior and
extends around all or most of the azimuth of the chamber interior.
The cylindrical pumping channel is coupled to the exhaust manifold
at one azimuthal position. Some conventional plasma chambers
include an annular exhaust manifold coupled directly to the exhaust
pump without any intermediate pumping channel. Other conventional
plasma chambers couple the pump to the chamber interior using only
a pumping channel that does not extend around the azimuth of the
chamber interior. In this patent specification, the term "exhaust
channel" or "exhaust passage" encompasses either an annular exhaust
manifold or a pumping channel, or the two in combination.
[0034] 2. Exhaust Channel and Magnet for Confining Plasma
[0035] The preferred embodiment of the invention, shown in FIGS.
1-3, employs two features--a gas flow deflector 44, 46 and a magnet
system 50--that operate synergistically to prevent the plasma body
within the chamber interior from reaching the exhaust pump.
[0036] Specifically, the interior of the exhaust manifold 30
includes at least one deflector 44, 46 that deflects at least a
substantial portion of the exhaust gases transversely, instead of
allowing all of the exhaust gases to flow in an unobstructed
straight path through the exhaust manifold. (By "transversely" we
mean perpendicular to the direction of the path along which the
gases would flow in the absence of the deflector.) The deflector
creates turbulence in the flow of exhaust gases that increases the
rate of collisions of reactive species in the gases with the
deflector and with the walls of the exhaust manifold near the
deflector. The collisions promote surface reactions among the
reactive species so as to produce deposits on the walls. This
depletes the exhaust gases of the reactive species that tend to
produce such deposits, thereby greatly reducing or eliminating the
concentration of such reactive species in the exhaust gases
downstream of the deflector, and therefore greatly reducing or
eliminating undesirable deposits on the throttle valve 34 and pump
28.
[0037] The deflector also increases the rate of collisions of
charged particles in the exhaust gases so as to promote
recombination of such charged particles, thereby reducing the
concentration of charged particles in the exhaust gases.
[0038] Additionally, a magnet system 50 (52-57) is positioned near
the deflector 44, 46 so as to produce a magnetic field within the
exhaust manifold near the deflector. The magnetic field preferably
has a substantial component directed transverse to the direction of
exhaust gas flow through the manifold. The transverse component of
the magnetic field transversely deflects moving electrons so that
they are more likely to recombine with positive ions, thereby
reducing the concentration of charged particles in the exhaust
gases.
[0039] Since the deflector and the magnetic system both reduce the
concentration of charged particles in the exhaust gases, the two in
combination can reduce the concentration sufficiently to extinguish
the plasma downstream of the deflector and magnet system.
Specifically, the magnetic field should be strong enough, and the
turbulence caused by the one or more deflectors should be great
enough, so that the combined effects of the magnetic field and the
deflector prevent the plasma body within the chamber from reaching
the throttle valve 34 and exhaust pump 28.
[0040] The plasma confinement effect of the magnetic field permits
the use of a wider and/or less sinuous exhaust channel than would
be required to block the plasma without the magnetic field.
Therefore, the pressure drop across the exhaust channel can be
reduced in comparison with prior art designs that rely entirely on
the sinuousness of the exhaust manifold to block the plasma.
[0041] In the preferred embodiment shown in FIGS. 1-3, the
deflector consists of two coaxial, annular protrusions 44, 46
extending into the gas passageway of the exhaust manifold 30 from
the walls of the manifold. The upper protrusion 44 extends radially
inward from the outer dielectric liner 36, and the lower protrusion
46 extends radially outward from the inner dielectric liner or
cathode shield 38. Because the two protrusions overlap each other
radially, they do not permit any of the exhaust gases to travel in
a straight line through the exhaust manifold, thereby maximizing
the likelihood that reactive species in the exhaust gases will
collide with either the protrusions or the walls of the exhaust
manifold.
[0042] We define a "magnet system" as one or more magnets in
combination with zero, one or more magnetically permeable pole
pieces to form a magnetic circuit having a north pole and a south
pole. In the preferred embodiment of FIGS. 1-3, the magnet system
50 consists of two annular magnets 52, 53 mounted coaxially with
the annular exhaust manifold 30 and spaced apart along the axis of
the manifold. The two annular magnets are identical, except that
the first magnet 52 has its north and south poles at its radially
inner and outer ends, respectively, whereas the second magnet 53
has its north and south poles at its radially outer and inner ends,
respectively. The magnet system 50 also includes a cylindrical,
magnetically permeable pole piece 54 mounted coaxially with the two
magnets 52, 53 so as to abut and extend between the radially inner
ends of the two magnets, thereby completing a magnetic path or
"magnetic circuit" between the two magnets.
[0043] Consequently, the north pole 56 of the magnet system 50 is
the north pole of the first annular magnet 52, i.e., the pole of
the first magnet opposite the pole that abuts the pole piece 54.
The south pole 57 of the magnet system 50 is the south pole of the
second annular magnet 53, i.e., the pole of the second magnet
opposite the pole that abuts the pole piece 54.
[0044] The magnet system 50 preferably is mounted within the lower
protrusion so that the ends of the north and south poles 56, 57 of
the magnet system are as close as possible to the narrow portion of
the gas passageway within the exhaust manifold that is radially
outward of the protrusion. Mounting the magnet system close to the
narrowest portion of the exhaust manifold passageway is desirable
to maximize the magnetic field strength to which the exhaust gases
are subjected.
[0045] The preferred implementation of the magnet system just
described has a U-shaped cross section as shown in FIGS. 1-3, with
the base of the "U" pointing radially inward and the open end of
the "U" pointing radially outward. More specifically, the shape of
the magnet system is that of a U-shaped horseshoe magnet that is
revolved around the longitudinal axis of the chamber.
[0046] The magnetic field pattern produced by this U-shaped magnet
system, represented by field line 58 in FIG. 1, is desirable
because it is concentrated primarily within the passageway of the
exhaust manifold. This concentration has at least two advantages.
One advantage is that, as stated above, it maximizes the magnetic
field strength to which the exhaust gases are subjected, thereby
maximizing the effectiveness of the magnet in extinguishing the
plasma downstream of the magnet.
[0047] A second advantage of the U-shaped magnet system is that the
magnetic field strength declines rapidly along the longitudinal
axis of the chamber, so that the magnetic field strength is low at
the workpiece 20. To minimize the risk of damaging the workpiece by
ion bombardment or electrostatic charge accumulation, the magnetic
field strength at the workpiece should be as low as possible,
preferably no greater than 5 gauss, and more preferably no greater
than 3 gauss. The magnet system is mounted in the lower protrusion
rather than the upper protrusion in order to position the magnet
system as far as possible from the workpiece 20, thereby minimizing
the strength of the magnetic field at the workpiece.
[0048] FIG. 4 shows an alternative magnet system 60 whose magnets
and pole pieces are interchanged relative to the embodiment of
FIGS. 1-3. Specifically, the upper and lower annular members 62, 63
are magnetically permeable pole pieces rather than magnets. The
cylindrical member 64 is a magnet rather than a pole piece, the
cylindrical magnet having a north magnetic pole at the upper end of
its longitudinal axis abutting the upper pole piece 62 and a south
magnetic pole at the lower end of its axis abutting the lower pole
piece 63.
[0049] A possible alternative implementation of the exhaust
manifold could omit the upper protrusion 44, relying on the
combination of the lower protrusion 46 and the magnet system 50 to
block the plasma.
[0050] Another alternative exhaust manifold design would omit the
lower protrusion 46 (which extends radially outward from the inner
liner 38) and substitute a modified magnet system 51, shown in FIG.
5, that is mounted within the upper protrusion 44 (which extends
radially inward from the outer liner 36). The north and south
magnetic poles 56, 57 of the modified magnet system 51 should be
adjacent the gas passageway at the radially inner end of the
protrusion 44. This can be accomplished using the same magnets 52,
53 and pole piece 54 as in the FIG. 3 magnet system, but with the
pole piece 54 moved from the radially inner end to the radially
outer end of the two magnets, as shown in FIG. 5.
[0051] FIG. 6 shows an alternative magnet system 61 that differs
from the FIG. 5 magnet system 51 in that the magnets and pole
pieces are interchanged. (See the preceding discussion of the FIG.
4 embodiment.)
[0052] We also tested the exhaust manifold design shown in FIG. 7
in a plasma chamber that otherwise was identical to the chamber
shown in FIG. 1. The exhaust manifold of FIG. 7 includes upper and
lower annular magnets 68, 69 mounted within the upper and lower
protrusions 44, 46, respectively, of the exhaust channel. The upper
magnet 68 has north and south poles at its radially inner and outer
ends, respectively. The lower magnet 69 has north and south poles
at its radially outer and inner ends, respectively. Consequently,
the north and south poles of the upper magnet are aligned with the
south and north poles of the lower magnet. The resulting magnetic
field, depicted by magnetic field lines 70, is highly concentrated
in the region of the exhaust manifold channel or passageway between
the two protrusions. As explained in the preceding discussion of
the FIG. 1 embodiment, such concentration is desirable to maximize
the strength of the magnetic field to which the exhaust gases are
subjected and to minimize the magnetic field at the workpiece
20.
[0053] To facilitate testing the FIG. 7 embodiment with different
gaps between upper and lower protrusions 44, 46, our prototype
included an annular dielectric spacer 72 below the outer dielectric
liner 36. By substituting a thicker spacer 72, we could increase
the height of the upper protrusion 44 and thereby increase the gap
between the two protrusions. We used the same magnets 68, 69 for
every spacer thickness we tested. Therefore, when we substituted a
thicker spacer, we both increased the gap and decreased the
magnetic field strength in the gap.
[0054] In these tests we found that the plasma was successfully
blocked from extending below the lower protrusion when the gap
between the upper and lower protrusion was 0.5 inch or less and the
magnetic field strength in the gap was at least 100 or 150 gauss.
We also found that, in the illustrated chamber, the magnetic field
strength declined fast enough away from the magnets so that the
magnetic field strength at the workpiece position 20 was less than
3 gauss, which we consider low enough to avoid risk of damage to
the workpiece. However, when we tested a wider gap between the two
protrusions, and therefore a lower magnetic field strength in the
gap, we found that the plasma was not successfully blocked.
[0055] We currently prefer the FIG. 1 embodiment because more
manufacturing labor is required to mount magnets within two
protrusions as in the FIG. 7 design in comparison with mounting
magnets in only one protrusion as in the FIG. 1 design.
[0056] In an alternative implementation that omits the outer
dielectric liner 36, the chamber side wall could function as the
outer wall of the annular exhaust manifold. The chamber wall could
include an inward-extending protrusion 44.
[0057] Another alternative embodiment of the exhaust manifold would
be to omit one protrusion and its corresponding magnet from the
FIG. 7 embodiment. We tested a prototype that was identical to the
one shown in FIG. 7, except that the upper protrusion 44 and the
upper magnet 68 was omitted. While this prototype successfully,
blocked the plasma from extending below the lower protrusion, we
considered the magnetic field at the workpiece to be undesirably
strong. However, this embodiment might be suitable for use in
semiconductor fabrication processes in which the workpiece is not
overly susceptible to damage by ion bombardment or electrostatic
charge accumulation.
[0058] More generally, the deflector 44, 46 need not be one or more
protrusions extending from the walls of the exhaust channel, but
can be any structure within the exhaust channel that causes
substantial turbulence in the exhaust gases. As described earlier,
such turbulence will promote recombination of charged particles so
as to help extinguish the plasma downstream of the turbulence, and
it will promote surface reactions among reactive species so that
reaction products will be deposited on surfaces near the deflector
rather than on pumping components 28, 34 downstream.
[0059] The deflector and magnet system can be mounted in any part
of the exhaust channel, such as the pumping channel 32, even though
they are mounted in the annular exhaust manifold in the preferred
embodiment.
[0060] Of course, any materials between the magnet system and the
interior of the exhaust channel should be non-magnetic so as to
avoid blocking the magnetic field from reaching the exhaust gases.
As stated earlier, in the preferred embodiment the protrusions in
which the magnet system is mounted are anodized aluminum.
[0061] To equalize the exhaust gas flow rate around the azimuth of
the chamber, it is preferable to slightly reduce the radial width
of the exhaust manifold near the azimuth of the pumping channel and
to slightly increase its radial width near the opposite azimuth,
i.e., near the azimuth 180 degrees away from the pumping
channel.
[0062] The directions of the magnetic fields can be reversed
without affecting the operation of the invention. Therefore, all
references to north and south poles can be interchanged.
[0063] The illustrated plasma chamber has circular symmetry because
it is intended for processing a a single, circular semiconductor
wafer. In plasma chambers having other geometries, such as chambers
for processing multiple substrates or rectangular substrates, the
components of the invention such as the deflector and magnet system
would be expected to have rectangular or more complex geometries.
The term "annular" as used in this patent specification is not
intended to limit the described shape to one having a circular
inner or outer perimeter, but encompasses rectangular and more
complex shapes.
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