U.S. patent number RE47,923 [Application Number 15/058,005] was granted by the patent office on 2020-03-31 for semiconductor device and method of forming pip with inner known good die interconnected with conductive bumps.
This patent grant is currently assigned to STATS ChipPAC Pte. Ltd.. The grantee listed for this patent is STATS ChipPAC, Ltd.. Invention is credited to Henry Descalzo Bathan, Zigmund R. Camacho, Frederick R. Dahilig, Lionel Chien Hui Tay, Arnel Senosa Trasporto.
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United States Patent |
RE47,923 |
Camacho , et al. |
March 31, 2020 |
Semiconductor device and method of forming PIP with inner known
good die interconnected with conductive bumps
Abstract
A PiP semiconductor device has an inner known good semiconductor
package. In the semiconductor package, a first via is formed in a
temporary carrier. A first conductive layer is formed over the
carrier and into the first via. The first conductive layer in the
first via forms a conductive bump. A first semiconductor die is
mounted to the first conductive layer. A first encapsulant is
deposited over the first die and carrier. The semiconductor package
is mounted to a substrate. A second semiconductor die is mounted to
the first conductive layer opposite the first die. A second
encapsulant is deposited over the second die and semiconductor
package. A second via is formed in the second encapsulant to expose
the conductive bump. A second conductive layer is formed over the
second encapsulant and into the second via. The second conductive
layer is electrically connected to the second die.
Inventors: |
Camacho; Zigmund R. (Singapore,
SG), Dahilig; Frederick R. (Singapore, SG),
Tay; Lionel Chien Hui (Singapore, SG), Trasporto;
Arnel Senosa (Singapore, SG), Bathan; Henry
Descalzo (Singapore, SG) |
Applicant: |
Name |
City |
State |
Country |
Type |
STATS ChipPAC, Ltd. |
Singapore |
N/A |
SG |
|
|
Assignee: |
STATS ChipPAC Pte. Ltd.
(Singapore, SG)
|
Family
ID: |
1000004482395 |
Appl.
No.: |
15/058,005 |
Filed: |
March 1, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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12635631 |
Oct 9, 2012 |
8283209 |
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12136768 |
Jul 12, 2011 |
7977779 |
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Reissue of: |
13606451 |
Sep 7, 2012 |
8884418 |
Nov 11, 2014 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
24/24 (20130101); H01L 24/29 (20130101); H01L
21/568 (20130101); H01L 23/3135 (20130101); H01L
25/0657 (20130101); H01L 23/49816 (20130101); H01L
23/5389 (20130101); H01L 23/49548 (20130101); H01L
25/50 (20130101); H01L 21/6835 (20130101); H01L
25/105 (20130101); H01L 25/03 (20130101); H01L
21/4832 (20130101); H01L 24/29 (20130101); H01L
25/50 (20130101); H01L 23/49548 (20130101); H01L
23/3135 (20130101); H01L 25/105 (20130101); H01L
23/5389 (20130101); H01L 21/568 (20130101); H01L
25/03 (20130101); H01L 21/4832 (20130101); H01L
25/0657 (20130101); H01L 21/6835 (20130101); H01L
24/24 (20130101); H01L 23/49816 (20130101); H01L
2224/32245 (20130101); H01L 2924/01005 (20130101); H01L
2924/01073 (20130101); H01L 2924/014 (20130101); H01L
2225/06524 (20130101); H01L 2924/01004 (20130101); H01L
2224/24226 (20130101); H01L 2924/19041 (20130101); H01L
2924/3025 (20130101); H01L 2224/2919 (20130101); H01L
2924/30105 (20130101); H01L 2924/0103 (20130101); H01L
2924/01082 (20130101); H01L 24/73 (20130101); H01L
2924/181 (20130101); H01L 2924/1433 (20130101); H01L
2224/83439 (20130101); H01L 2224/29299 (20130101); H01L
2924/01024 (20130101); H01L 2924/01322 (20130101); H01L
2924/09701 (20130101); H01L 23/49541 (20130101); H01L
2224/83411 (20130101); H01L 2924/19107 (20130101); H01L
2224/2929 (20130101); H01L 2924/01006 (20130101); H01L
2924/1306 (20130101); H01L 2924/04941 (20130101); H01L
2224/73267 (20130101); H01L 2924/00013 (20130101); H01L
2924/15311 (20130101); H01L 2924/01074 (20130101); H01L
2224/48227 (20130101); H01L 2224/83447 (20130101); H01L
2924/01029 (20130101); H01L 2224/83455 (20130101); H01L
2924/14 (20130101); H01L 24/48 (20130101); H01L
2924/01047 (20130101); H01L 23/3128 (20130101); H01L
2224/32225 (20130101); H01L 2224/73204 (20130101); H01L
2224/83424 (20130101); H01L 2224/83444 (20130101); H01L
2224/48247 (20130101); H01L 2924/01079 (20130101); H01L
2924/15747 (20130101); H01L 2224/16 (20130101); H01L
2924/00014 (20130101); H01L 2924/01049 (20130101); H01L
2924/16195 (20130101); H01L 2225/0651 (20130101); H01L
2924/19105 (20130101); H01L 2224/16225 (20130101); H01L
2224/73265 (20130101); H01L 2924/01013 (20130101); H01L
2224/48091 (20130101); H01L 2924/13091 (20130101); H01L
2224/04105 (20130101); H01L 2224/12105 (20130101); H01L
2224/29111 (20130101); H01L 2225/1023 (20130101); H01L
2225/1058 (20130101); H01L 2924/01046 (20130101); H01L
2924/0132 (20130101); H01L 2924/01078 (20130101); H01L
2924/12041 (20130101); H01L 2224/85001 (20130101); H01L
2924/01023 (20130101); H01L 2924/12042 (20130101); H01L
2924/01078 (20130101); H01L 2924/014 (20130101); H01L
2224/2919 (20130101); H01L 2225/1058 (20130101); H01L
2924/01023 (20130101); H01L 2924/01079 (20130101); H01L
2924/01013 (20130101); H01L 24/48 (20130101); H01L
2924/00014 (20130101); H01L 2924/01006 (20130101); H01L
2224/83439 (20130101); H01L 2224/85001 (20130101); H01L
2924/01004 (20130101); H01L 2924/01322 (20130101); H01L
2924/19041 (20130101); H01L 2224/29299 (20130101); H01L
2224/32225 (20130101); H01L 2224/73265 (20130101); H01L
2924/01029 (20130101); H01L 2924/0132 (20130101); H01L
2224/48247 (20130101); H01L 2924/01047 (20130101); H01L
2224/48227 (20130101); H01L 2924/01074 (20130101); H01L
2924/12041 (20130101); H01L 2924/13091 (20130101); H01L
2924/15311 (20130101); H01L 2225/06524 (20130101); H01L
2924/30105 (20130101); H01L 2924/00013 (20130101); H01L
2924/01073 (20130101); H01L 2924/3025 (20130101); H01L
2224/24226 (20130101); H01L 2224/48091 (20130101); H01L
2924/0103 (20130101); H01L 2924/01082 (20130101); H01L
2924/12042 (20130101); H01L 2224/16225 (20130101); H01L
2224/73267 (20130101); H01L 23/3128 (20130101); H01L
2224/04105 (20130101); H01L 2924/04941 (20130101); H01L
2224/29111 (20130101); H01L 2924/01049 (20130101); H01L
2224/12105 (20130101); H01L 2224/73204 (20130101); H01L
2224/83424 (20130101); H01L 2224/83444 (20130101); H01L
24/73 (20130101); H01L 2224/83411 (20130101); H01L
2924/01024 (20130101); H01L 2924/15747 (20130101); H01L
2924/16195 (20130101); H01L 2225/0651 (20130101); H01L
2924/01005 (20130101); H01L 2924/14 (20130101); H01L
23/49541 (20130101); H01L 2224/83455 (20130101); H01L
2924/19105 (20130101); H01L 2924/19107 (20130101); H01L
2224/83447 (20130101); H01L 2924/1306 (20130101); H01L
2224/2929 (20130101); H01L 2225/1023 (20130101); H01L
2924/09701 (20130101); H01L 2924/1433 (20130101); H01L
2924/181 (20130101); H01L 2224/16 (20130101); H01L
2224/32245 (20130101); H01L 2924/01046 (20130101); H01L
2224/48091 (20130101); H01L 2224/48091 (20130101); H01L
2924/00014 (20130101); H01L 2924/00014 (20130101); H01L
2224/73265 (20130101); H01L 2224/73265 (20130101); H01L
2224/32245 (20130101); H01L 2224/32245 (20130101); H01L
2224/48247 (20130101); H01L 2224/48247 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2224/48247 (20130101); H01L 2224/48247 (20130101); H01L
2924/13091 (20130101); H01L 2924/13091 (20130101); H01L
2924/0132 (20130101); H01L 2924/0132 (20130101); H01L
2924/0105 (20130101); H01L 2924/0105 (20130101); H01L
2924/01082 (20130101); H01L 2924/01082 (20130101); H01L
2224/29299 (20130101); H01L 2224/29299 (20130101); H01L
2924/00014 (20130101); H01L 2924/00014 (20130101); H01L
2224/2919 (20130101); H01L 2224/2919 (20130101); H01L
2924/0665 (20130101); H01L 2924/0665 (20130101); H01L
2924/00013 (20130101); H01L 2924/00013 (20130101); H01L
2224/29099 (20130101); H01L 2224/29099 (20130101); H01L
2924/00013 (20130101); H01L 2924/00013 (20130101); H01L
2224/29199 (20130101); H01L 2224/29199 (20130101); H01L
2924/00013 (20130101); H01L 2924/00013 (20130101); H01L
2224/29299 (20130101); H01L 2224/29299 (20130101); H01L
2924/00013 (20130101); H01L 2924/00013 (20130101); H01L
2224/2929 (20130101); H01L 2224/2929 (20130101); H01L
2224/73265 (20130101); H01L 2224/73265 (20130101); H01L
2224/32245 (20130101); H01L 2224/32245 (20130101); H01L
2224/48247 (20130101); H01L 2224/48247 (20130101); H01L
2924/00012 (20130101); H01L 2924/00012 (20130101); H01L
2224/73265 (20130101); H01L 2224/73265 (20130101); H01L
2224/32225 (20130101); H01L 2224/32225 (20130101); H01L
2224/48227 (20130101); H01L 2224/48227 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2224/73265 (20130101); H01L 2224/73265 (20130101); H01L
2224/32225 (20130101); H01L 2224/32225 (20130101); H01L
2224/48247 (20130101); H01L 2224/48247 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2224/73265 (20130101); H01L 2224/73265 (20130101); H01L
2224/32245 (20130101); H01L 2224/32245 (20130101); H01L
2224/48227 (20130101); H01L 2224/48227 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2924/15311 (20130101); H01L 2924/15311 (20130101); H01L
2224/73265 (20130101); H01L 2224/73265 (20130101); H01L
2224/32225 (20130101); H01L 2224/32225 (20130101); H01L
2224/48227 (20130101); H01L 2224/48227 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2924/15311 (20130101); H01L 2924/15311 (20130101); H01L
2224/73204 (20130101); H01L 2224/73204 (20130101); H01L
2224/16225 (20130101); H01L 2224/16225 (20130101); H01L
2224/32225 (20130101); H01L 2224/32225 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2924/12041 (20130101); H01L 2924/12041 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2924/1306 (20130101); H01L 2924/1306 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2924/12042 (20130101); H01L 2924/12042 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101); H01L
2924/181 (20130101); H01L 2924/181 (20130101); H01L
2924/00012 (20130101); H01L 2924/00012 (20130101); H01L
2924/00014 (20130101); H01L 2924/00014 (20130101); H01L
2224/45099 (20130101); H01L 2224/45099 (20130101); H01L
2924/00014 (20130101); H01L 2924/00014 (20130101); H01L
2224/45015 (20130101); H01L 2224/45015 (20130101); H01L
2924/207 (20130101); H01L 2924/207 (20130101) |
Current International
Class: |
H01L
23/24 (20060101); H01L 21/48 (20060101); H01L
21/56 (20060101); H01L 21/683 (20060101); H01L
23/31 (20060101); H01L 23/498 (20060101); H01L
23/538 (20060101); H01L 23/00 (20060101); H01L
23/495 (20060101); H01L 23/28 (20060101); H01L
25/065 (20060101); H01L 25/10 (20060101); H01L
25/03 (20060101); H01L 25/00 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Andujar; Leonardo
Attorney, Agent or Firm: Atkins; Robert D. Patent Law Group:
Atkins and Associates, P.C.
Parent Case Text
CLAIM TO DOMESTIC PRIORITY
The present application is .Iadd.a reissue of U.S. patent
application Ser. No. 13/606,451, now U.S. Pat. No. 8,884,418, filed
Sep. 7, 2012, which is .Iaddend.a division of U.S. patent
application Ser. No. 12/635,631, now U.S. Pat. No. 8,283,209, filed
Dec. 10, 2009, which application is incorporated herein by
reference and which is a continuation-in-part of U.S. patent
application Ser. No. 12/136,768, now U.S. Pat. No. 7,977,779, filed
Jun. 10, 2008.
Claims
What is claimed:
1. A semiconductor device, comprising: a support layer; a
semiconductor package disposed over the support layer, the
semiconductor package including, (a) a first semiconductor die or
component, (b) a first encapsulant deposited over the first
semiconductor die or component with an encapsulant bump extending
from a body of the first encapsulant, and (c) a first conductive
layer disposed over the first encapsulant including the encapsulant
bump to form a conductive bump; a second encapsulant deposited over
a surface of the semiconductor package opposite the support layer,
the second encapsulant including an opening over the conductive
bump; and a second conductive layer formed in the opening over the
conductive bump.
2. The semiconductor device of claim 1, further including an
interconnect structure formed over the second encapsulant, the
interconnect structure being electrically connected to the
conductive bump.
3. The semiconductor device of claim 1, further including a second
semiconductor die or component disposed over the semiconductor
package.
4. The semiconductor device of claim 1, wherein the semiconductor
package further includes a bond wire formed between the conductive
bump and first semiconductor die or component.
5. The semiconductor device of claim 1, wherein the first
semiconductor die or component includes a known good die or
component.
6. The semiconductor device of claim 1, wherein the support layer
operates as a substrate, stiffener, heat sink, shielding layer,
printed circuit board, or carrier.
7. A semiconductor device, comprising: a first semiconductor die or
component; a first encapsulant deposited over the first
semiconductor die or component with an encapsulant bump extending
from a body of the first encapsulant; a first conductive layer
disposed over a first surface of the first encapsulant including
the encapsulant bump to form a conductive bump; and a second
encapsulant deposited over and around the first encapsulant, the
second encapsulant including a via formed through a surface of the
second encapsulant .Iadd.and extending to conductive
bump.Iaddend..
8. The semiconductor device of claim 7, further including a bond
wire formed between the conductive bump and first semiconductor die
or component.
9. The semiconductor device of claim 7, further including: a
support layer disposed over a second surface of the first
encapsulant opposite the first surface of the first encapsulant;
the second encapsulant deposited over the support layer; and an
interconnect structure formed over the second encapsulant and
within the via.
10. The semiconductor device of claim 9, further including a second
semiconductor die or component disposed over the first surface of
the first encapsulant.
11. The semiconductor device of claim 9, wherein the interconnect
structure includes: a second conductive layer formed over the
second encapsulant; an insulating layer formed over the second
conductive layer; and a third conductive layer formed over the
second conductive layer.
12. The semiconductor device of claim 9, wherein the support layer
operates as a substrate, stiffener, heat sink, shielding layer,
printed circuit board, or carrier.
13. The semiconductor device of claim 7, wherein the first
semiconductor die or component includes a known good die or
component.
.[.14. A semiconductor device, comprising: a support layer; and a
semiconductor package disposed over the support layer, the
semiconductor package including, (a) a first semiconductor die or
component, (b) a first non-conductive encapsulant deposited over
the first semiconductor die or component with an encapsulant bump
extending from a body of the first nonconductive encapsulant, and
(c) a first conductive layer disposed over a first surface of the
first non-conductive encapsulant including the encapsulant bump to
form a conductive bump..].
.[.15. The semiconductor device of claim 14, wherein the
semiconductor package further includes a bond wire formed between
the conductive bump and first semiconductor die or
component..].
.[.16. The semiconductor device of claim 14, further including: a
second encapsulant deposited over the support layer and
semiconductor package; and an interconnect structure formed over
the second encapsulant..].
.[.17. The semiconductor device of claim 16, wherein the
interconnect structure includes: a second conductive layer formed
over the second encapsulant; an insulating layer formed over the
second conductive layer; and a third conductive layer formed over
the second conductive layer..].
.[.18. The semiconductor device of claim 14, further including a
second semiconductor die or component disposed over the
semiconductor package..].
.[.19. The semiconductor device of claim 14, wherein the support
layer operates as a substrate, stiffener, heat sink, shielding
layer, printed circuit board, or carrier..].
.[.20. The semiconductor device of claim 14, wherein the first
semiconductor die or component includes a known good die or
component..].
.[.21. A semiconductor device, comprising: a support layer; and a
semiconductor package disposed over the support layer, the
semiconductor package including a bump comprising an inner
insulating material and outer conductive material..].
.[.22. The semiconductor device of claim 21, wherein the
semiconductor package includes: a first semiconductor die or
component; an encapsulant deposited over the first semiconductor
die or component, wherein a portion of the encapsulant constitutes
the inner insulating material of the bump; and a conductive layer
formed over the encapsulant, wherein a portion of the conductive
layer constitutes the outer conductive material of the bump..].
.[.23. The semiconductor device of claim 21, further including: an
encapsulant deposited over the support layer and semiconductor
package; and an interconnect structure formed over the
encapsulant..].
.[.24. The semiconductor device of claim 21, further including a
second semiconductor die or component disposed over the
semiconductor package..].
.[.25. The semiconductor device of claim 21, wherein the support
layer operates as a substrate, stiffener, heat sink, shielding
layer, printed circuit board, or carrier..].
Description
FIELD OF THE INVENTION
The present invention relates in general to semiconductor devices
and, more particularly, to a semiconductor device and method of
forming a package-in-package configuration with an inner known good
die interconnected with conductive bumps formed in shallow
vias.
BACKGROUND OF THE INVENTION
Semiconductor devices are commonly found in modern electronic
products. Semiconductor devices vary in the number and density of
electrical components. Discrete semiconductor devices generally
contain one type of electrical component, e.g., light emitting
diode (LED), small signal transistor, resistor, capacitor,
inductor, and power metal oxide semiconductor field effect
transistor (MOSFET). Integrated semiconductor devices typically
contain hundreds to millions of electrical components. Examples of
integrated semiconductor devices include microcontrollers,
microprocessors, charged-coupled devices (CCDs), solar cells, and
digital micro-mirror devices (DMDs).
Semiconductor devices perform a wide range of functions such as
high-speed calculations, transmitting and receiving electromagnetic
signals, controlling electronic devices, transforming sunlight to
electricity, and creating visual projections for television
displays. Semiconductor devices are found in the fields of
entertainment, communications, power conversion, networks,
computers, and consumer products. Semiconductor devices are also
found in military applications, aviation, automotive, industrial
controllers, and office equipment.
Semiconductor devices exploit the electrical properties of
semiconductor materials. The atomic structure of semiconductor
material allows its electrical conductivity to be manipulated by
the application of an electric field or base current or through the
process of doping. Doping introduces impurities into the
semiconductor material to manipulate and control the conductivity
of the semiconductor device.
A semiconductor device contains active and passive electrical
structures. Active structures, including bipolar and field effect
transistors, control the flow of electrical current. By varying
levels of doping and application of an electric field or base
current, the transistor either promotes or restricts the flow of
electrical current. Passive structures, including resistors,
capacitors, and inductors, create a relationship between voltage
and current necessary to perform a variety of electrical functions.
The passive and active structures are electrically connected to
form circuits, which enable the semiconductor device to perform
high-speed calculations and other useful functions.
Semiconductor devices are generally manufactured using two complex
manufacturing processes, i.e., front-end manufacturing, and
back-end manufacturing, each involving potentially hundreds of
steps. Front-end manufacturing involves the formation of a
plurality of die on the surface of a semiconductor wafer. Each die
is typically identical and contains circuits formed by electrically
connecting active and passive components. Back-end manufacturing
involves singulating individual die from the finished wafer and
packaging the die to provide structural support and environmental
isolation.
One goal of semiconductor manufacturing is to produce smaller
semiconductor devices. Smaller devices typically consume less
power, have higher performance, and can be produced more
efficiently. In addition, smaller semiconductor devices have a
smaller footprint, which is desirable for smaller end products. A
smaller die size may be achieved by improvements in the front-end
process resulting in die with smaller, higher density active and
passive components. Back-end processes may result in semiconductor
device packages with a smaller footprint by improvements in
electrical interconnection and packaging materials.
Some semiconductor devices are configured as a package-in-package
(PiP). The semiconductor die are interconnected by bond wires or
deep conductive through silicon vias (TSV) or deep conductive
through hole vias (THV). The interconnect structure increases the
PiP thickness and manufacturing costs.
SUMMARY OF THE INVENTION
A need exists to electrically interconnect PiP without deep TSV or
THV. Accordingly, in one embodiment, the present invention is a
semiconductor device comprising a support layer and semiconductor
package disposed over the support layer. The semiconductor package
includes a first semiconductor die or component, first encapsulant
deposited over the first semiconductor die or component with an
encapsulant bump extending from a body of the first encapsulant,
and first conductive layer disposed over the first encapsulant
including the encapsulant bump to form a conductive bump. A second
encapsulant is deposited over the semiconductor package and support
layer.
In another embodiment, the present invention is a semiconductor
device comprising a first semiconductor die or component. A first
encapsulant is deposited over the first semiconductor die or
component with an encapsulant bump extending from a body of the
first encapsulant. A first conductive layer is disposed over a
first surface of the first encapsulant including the encapsulant
bump to form a conductive bump.
In another embodiment, the present invention is a semiconductor
device comprising a support layer and semiconductor package
disposed over the support layer. The semiconductor package includes
a first semiconductor die or component, first encapsulant deposited
over the first semiconductor die or component with an encapsulant
bump extending from a body of the first encapsulant, and first
conductive layer disposed over a first surface of the first
encapsulant including the encapsulant bump to form a conductive
bump.
In another embodiment, the present invention is a semiconductor
device comprising a support layer and semiconductor package
disposed over the support layer. The semiconductor package includes
a bump comprising an inner insulating material and outer conductive
material.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates a PCB with different types of packages mounted
to its surface;
FIGS. 2a-2c illustrate further detail of the representative
semiconductor packages mounted to the PCB;
FIGS. 3a-3j illustrate a process of forming wafer level PiP mounted
to a substrate with inner known good die interconnected with
conductive bumps formed in shallow vias;
FIG. 4 illustrates the PiP with an IPD;
FIG. 5 illustrates the inner package mounted to a support
layer;
FIG. 6 illustrates the inner package mounted to an EMI and RFI
shielding layer;
FIGS. 7a-7b illustrates the inner package mounted to a PCB; and
FIGS. 8a-8h illustrate a process of forming PiP mounted to a
carrier with inner known good die interconnected with conductive
bumps formed in shallow vias.
DETAILED DESCRIPTION OF THE DRAWINGS
The present invention is described in one or more embodiments in
the following description with reference to the figures, in which
like numerals represent the same or similar elements. While the
invention is described in terms of the best mode for achieving the
invention's objectives, it will be appreciated by those skilled in
the art that it is intended to cover alternatives, modifications,
and equivalents as may be included within the spirit and scope of
the invention as defined by the appended claims and their
equivalents as supported by the following disclosure and
drawings.
Semiconductor devices are generally manufactured using two complex
manufacturing processes: front-end manufacturing and back-end
manufacturing. Front-end manufacturing involves the formation of a
plurality of die on the surface of a semiconductor wafer. Each die
on the wafer contains active and passive electrical components,
which are electrically connected to form functional electrical
circuits. Active electrical components, such as transistors and
diodes, have the ability to control the flow of electrical current.
Passive electrical components, such as capacitors, inductors,
resistors, and transformers, create a relationship between voltage
and current necessary to perform electrical circuit functions.
Passive and active components are formed over the surface of the
semiconductor wafer by a series of process steps including doping,
deposition, photolithography, etching, and planarization. Doping
introduces impurities into the semiconductor material by techniques
such as ion implantation or thermal diffusion. The doping process
modifies the electrical conductivity of semiconductor material in
active devices, transforming the semiconductor material into an
insulator, conductor, or dynamically changing the semiconductor
material conductivity in response to an electric field or base
current. Transistors contain regions of varying types and degrees
of doping arranged as necessary to enable the transistor to promote
or restrict the flow of electrical current upon the application of
the electric field or base current.
Active and passive components are formed by layers of materials
with different electrical properties. The layers can be formed by a
variety of deposition techniques determined in part by the type of
material being deposited. For example, thin film deposition may
involve chemical vapor deposition (CVD), physical vapor deposition
(PVD), electrolytic plating, and electroless plating processes.
Each layer is generally patterned to form portions of active
components, passive components, or electrical connections between
components.
The layers can be patterned using photolithography, which involves
the deposition of light sensitive material, e.g., photoresist, over
the layer to be patterned. A pattern is transferred from a
photomask to the photoresist using light. The portion of the
photoresist pattern subjected to light is removed using a solvent,
exposing portions of the underlying layer to be patterned. The
remainder of the photoresist is removed, leaving behind a patterned
layer. Alternatively, some types of materials are patterned by
directly depositing the material into the areas or voids formed by
a previous deposition/etch process using techniques such as
electroless and electrolytic plating.
Depositing a thin film of material over an existing pattern can
exaggerate the underlying pattern and create a non-uniformly flat
surface. A uniformly flat surface is required to produce smaller
and more densely packed active and passive components.
Planarization can be used to remove material from the surface of
the wafer and produce a uniformly flat surface. Planarization
involves polishing the surface of the wafer with a polishing pad.
An abrasive material and corrosive chemical are added to the
surface of the wafer during polishing. The combined mechanical
action of the abrasive and corrosive action of the chemical removes
any irregular topography, resulting in a uniformly flat
surface.
Back-end manufacturing refers to cutting or singulating the
finished wafer into the individual die and then packaging the die
for structural support and environmental isolation. To singulate
the die, the wafer is scored and broken along non-functional
regions of the wafer called saw streets or scribes. The wafer is
singulated using a laser cutting tool or saw blade. After
singulation, the individual die are mounted to a package substrate
that includes pins or contact pads for interconnection with other
system components. Contact pads formed over the semiconductor die
are then connected to contact pads within the package. The
electrical connections can be made with solder bumps, stud bumps,
conductive paste, or wirebonds. An encapsulant or other molding
material is deposited over the package to provide physical support
and electrical isolation. The finished package is then inserted
into an electrical system and the functionality of the
semiconductor device is made available to the other system
components.
FIG. 1 illustrates electronic device 50 having a chip carrier
substrate or printed circuit board (PCB) 52 with a plurality of
semiconductor packages mounted on its surface. Electronic device 50
may have one type of semiconductor package, or multiple types of
semiconductor packages, depending on the application. The different
types of semiconductor packages are shown in FIG. 1 for purposes of
illustration.
Electronic device 50 may be a stand-alone system that uses the
semiconductor packages to perform one or more electrical functions.
Alternatively, electronic device 50 may be a sub-component of a
larger system. For example, electronic device 50 may be a graphics
card, network interface card, or other signal processing card that
can be inserted into a computer. The semiconductor package can
include microprocessors, memories, application specific integrated
circuits (ASIC), logic circuits, analog circuits, RF circuits,
discrete devices, or other semiconductor die or electrical
components.
In FIG. 1, PCB 52 provides a general substrate for structural
support and electrical interconnect of the semiconductor packages
mounted on the PCB. Conductive signal traces 54 are formed over a
surface or within layers of PCB 52 using evaporation, electrolytic
plating, electroless plating, screen printing, or other suitable
metal deposition process. Signal traces 54 provide for electrical
communication between each of the semiconductor packages, mounted
components, and other external system components. Traces 54 also
provide power and ground connections to each of the semiconductor
packages.
In some embodiments, a semiconductor device has two packaging
levels. First level packaging is a technique for mechanically and
electrically attaching the semiconductor die to an intermediate
carrier. Second level packaging involves mechanically and
electrically attaching the intermediate carrier to the PCB. In
other embodiments, a semiconductor device may only have the first
level packaging where the die is mechanically and electrically
mounted directly to the PCB.
For the purpose of illustration, several types of first level
packaging, including wire bond package 56 and flip chip 58, are
shown on PCB 52. Additionally, several types of second level
packaging, including ball grid array (BGA) 60, bump chip carrier
(BCC) 62, dual in-line package (DIP) 64, land grid array (LGA) 66,
multi-chip module (MCM) 68, quad flat non-leaded package (QFN) 70,
and quad flat package 72, are shown mounted on PCB 52. Depending
upon the system requirements, any combination of semiconductor
packages, configured with any combination of first and second level
packaging styles, as well as other electronic components, can be
connected to PCB 52. In some embodiments, electronic device 50
includes a single attached semiconductor package, while other
embodiments call for multiple interconnected packages. By combining
one or more semiconductor packages over a single substrate,
manufacturers can incorporate pre-made components into electronic
devices and systems. Because the semiconductor packages include
sophisticated functionality, electronic devices can be manufactured
using cheaper components and a streamlined manufacturing process.
The resulting devices are less likely to fail and less expensive to
manufacture resulting in a lower cost for consumers.
FIGS. 2a-2c show exemplary semiconductor packages. FIG. 2a
illustrates further detail of DIP 64 mounted on PCB 52.
Semiconductor die 74 includes an active region containing analog or
digital circuits implemented as active devices, passive devices,
conductive layers, and dielectric layers formed within the die and
are electrically interconnected according to the electrical design
of the die. For example, the circuit may include one or more
transistors, diodes, inductors, capacitors, resistors, and other
circuit elements formed within the active region of semiconductor
die 74. Contact pads 76 are one or more layers of conductive
material, such as aluminum (Al), copper (Cu), tin (Sn), nickel
(Ni), gold (Au), or silver (Ag), and are electrically connected to
the circuit elements formed within semiconductor die 74. During
assembly of DIP 64, semiconductor die 74 is mounted to an
intermediate carrier 78 using a gold-silicon eutectic layer or
adhesive material such as thermal epoxy or epoxy resin. The package
body includes an insulative packaging material such as polymer or
ceramic. Conductor leads 80 and wire bonds 82 provide electrical
interconnect between semiconductor die 74 and PCB 52. Encapsulant
84 is deposited over the package for environmental protection by
preventing moisture and particles from entering the package and
contaminating die 74 or wire bonds 82.
FIG. 2b illustrates further detail of BCC 62 mounted on PCB 52.
Semiconductor die 88 is mounted over carrier 90 using an underfill
or epoxy-resin adhesive material 92. Wire bonds 94 provide first
level packing interconnect between contact pads 96 and 98. Molding
compound or encapsulant 100 is deposited over semiconductor die 88
and wire bonds 94 to provide physical support and electrical
isolation for the device. Contact pads 102 are formed over a
surface of PCB 52 using a suitable metal deposition process such as
electrolytic plating or electroless plating to prevent oxidation.
Contact pads 102 are electrically connected to one or more
conductive signal traces 54 in PCB 52. Bumps 104 are formed between
contact pads 98 of BCC 62 and contact pads 102 of PCB 52.
In FIG. 2c, semiconductor die 58 is mounted face down to
intermediate carrier 106 with a flip chip style first level
packaging. Active region 108 of semiconductor die 58 contains
analog or digital circuits implemented as active devices, passive
devices, conductive layers, and dielectric layers formed according
to the electrical design of the die. For example, the circuit may
include one or more transistors, diodes, inductors, capacitors,
resistors, and other circuit elements within active region 108.
Semiconductor die 58 is electrically and mechanically connected to
carrier 106 through bumps 110.
BGA 60 is electrically and mechanically connected to PCB 52 with a
BGA style second level packaging using bumps 112. Semiconductor die
58 is electrically connected to conductive signal traces 54 in PCB
52 through bumps 110, signal lines 114, and bumps 112. A molding
compound or encapsulant 116 is deposited over semiconductor die 58
and carrier 106 to provide physical support and electrical
isolation for the device. The flip chip semiconductor device
provides a short electrical conduction path from the active devices
on semiconductor die 58 to conduction tracks on PCB 52 in order to
reduce signal propagation distance, lower capacitance, and improve
overall circuit performance. In another embodiment, the
semiconductor die 58 can be mechanically and electrically connected
directly to PCB 52 using flip chip style first level packaging
without intermediate carrier 106.
FIGS. 3a-3j illustrate, in relation to FIGS. 1 and 2a-2c, a process
of forming wafer level PiP mounted to a substrate with inner known
good die interconnected with conductive bumps formed in shallow
vias. In FIG. 3a, a substrate or carrier 120 contains temporary or
sacrificial base material such as silicon, polymer, polymer
composite, metal, ceramic, glass, glass epoxy, beryllium oxide, or
other suitable low-cost, rigid material or bulk semiconductor
material for structural support. A plurality of shallow vias 121 is
formed in the surface of carrier 120.
In FIG. 3b, an electrically conductive layer 122 is formed over
surface 123 of carrier 120, including following the contour of vias
121, using a patterning and metal deposition process such as PVD,
CVD, sputtering, electrolytic plating, and electroless plating. A
portion of conductive layer 122, denoted as conductive bumps 122a,
resides in vias 121. Conductive layer 122 can be one or more layers
of Al, Cu, Sn, Ni, Au, Ag, or other suitable electrically
conductive material. Portions of conductive layer 122 can be
electrically common or electrically isolated depending on the
design and function of the semiconductor device.
In FIG. 3c, semiconductor die or component 124 is mounted to
conductive layer 122 with contact pads 126 on active surface 128
oriented upward away from carrier 120. Active surface 128 contains
analog or digital circuits implemented as active devices, passive
devices, conductive layers, and dielectric layers formed within the
die and electrically interconnected according to the electrical
design and function of the die. For example, the circuit may
include one or more transistors, diodes, and other circuit elements
formed within active surface 128 to implement analog circuits or
digital circuits, such as digital signal processor (DSP), ASIC,
memory, or other signal processing circuit. Semiconductor die 124
may also contain IPDs, such as inductors, capacitors, and
resistors, for RF signal processing. Back surface 130 is secured to
conductive layer 122 with an adhesive material 132, such as thermal
epoxy or epoxy resin. Bond wires 134 are formed between contact
pads 126 to conductive layer 122 for electrical interconnect.
An encapsulant or molding compound 136 is deposited over
semiconductor die 124, conductive layer 122, and bond wires 134
using a paste printing, compressive molding, transfer molding,
liquid encapsulant molding, vacuum lamination, spin coating, or
other suitable applicator. Encapsulant 136 can be polymer composite
material, such as epoxy resin with filler, epoxy acrylate with
filler, or polymer with proper filler. Encapsulant 136 is
non-conductive and environmentally protects the semiconductor
device from external elements and contaminants.
FIG. 3d shows a semiconductor wafer 140 containing a base substrate
material 142 such as silicon, germanium, gallium arsenide, indium
phosphide, or silicon carbide, for structural support. An
electrically conductive layer 144 is formed over substrate 142
using a patterning and metal deposition process such as PVD, CVD,
sputtering, electrolytic plating, and electroless plating.
Conductive layer 144 can be one or more layers of Al, Cu, Sn, Ni,
Au, Ag, or other suitable electrically conductive material.
Conductive layer 144 provides electrical interconnect. Portions of
conductive layer 144 can be electrically common or electrically
isolated depending on the design and function of the semiconductor
device. An adhesive layer 146, such as thermal epoxy or epoxy
resin, is formed over a surface of substrate 142.
In another embodiment, semiconductor wafer 140 may also contain a
plurality of semiconductor die each having an active region 148
containing analog or digital circuits implemented as active
devices, passive devices, conductive layers, and dielectric layers
formed within the die and electrically interconnected according to
the electrical design and function of the die. For example, the
circuit may include one or more transistors, diodes, and other
circuit elements formed within active surface 148 to implement
baseband analog circuits or digital circuits, such as DSP, memory,
or other signal processing circuit. Semiconductor wafer 140 may
also contain IPDs, such as inductors, capacitors, and resistors,
for RF signal processing. Conductive layer 144 is electrically
connected to the active and passive circuits in active region
148.
The temporary carrier 120 is removed by chemical etching,
mechanical peel-off, CMP, mechanical grinding, thermal bake, laser
scanning, or wet stripping to expose conductive bumps 122a. The
semiconductor package 138 is inverted and mounted to substrate 142
with encapsulant 136 contacting adhesive layer 146, as shown in
FIGS. 3d-3e.
In FIG. 3f, bond wires 150 are formed between conductive layer 122
and conductive layer 144. The active and passive circuits of
semiconductor die 124 are electrically connected through contact
pads 126, bond wires 134, conductive layer 122, and bond wires 150
to conductive layer 144 of substrate 142.
An adhesive layer 152, such as thermal epoxy or epoxy resin, is
formed over a portion of conductive layer 122 opposite
semiconductor die 124. A semiconductor die or component 154 is
mounted with back surface 156 to conductive layer 122 and contact
pads 158 on active surface 160 oriented upward away from conductive
layer 122. Active surface 160 contains analog or digital circuits
implemented as active devices, passive devices, conductive layers,
and dielectric layers formed within the die and electrically
interconnected according to the electrical design and function of
the die. For example, the circuit may include one or more
transistors, diodes, and other circuit elements formed within
active surface 160 to implement analog circuits or digital
circuits, such as DSP, ASIC, memory, or other signal processing
circuit. Semiconductor die 154 may also contain IPDs, such as
inductors, capacitors, and resistors, for RF signal processing.
In FIG. 3g, an encapsulant or molding compound 162 is deposited
over semiconductor package 138, bond wires 150, and substrate 142
using a paste printing, compressive molding, transfer molding,
liquid encapsulant molding, vacuum lamination, spin coating, or
other suitable applicator. Encapsulant 162 can be polymer composite
material, such as epoxy resin with filler, epoxy acrylate with
filler, or polymer with proper filler. Encapsulant 162 is
non-conductive and environmentally protects the semiconductor
device from external elements and contaminants.
In FIG. 3h, a plurality of shallow vias 167a and 167b is formed in
the surface of encapsulant 162 by an etching process to expose
conductive bumps 122a and contact pads 158.
In FIG. 3i, an electrically conductive layer 164 is formed over
encapsulant 162, conductive bumps 122a, and contact pads 158 using
a patterning and metal deposition process such as PVD, CVD,
sputtering, electrolytic plating, and electroless plating. A
portion of conductive layer 164, denoted as conductive bumps 164a
and 164b, resides in vias 167a and 167b. Conductive layer 164 can
be one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable
electrically conductive material. Conductive layer 164 operates as
a redistribution layer (RDL) and provides electrical interconnect
between the active and passive circuits of semiconductor die 154
and conductive layer 122. Conductive bumps 164a are electrically
connected to conductive bumps 122a, and conductive bumps 164b are
electrically connected to contact pads 158. Other portions of
conductive layer 164 can be electrically common or electrically
isolated depending on the design and function of the semiconductor
device.
In FIG. 3j, an insulating or passivation layer 166 is formed over
encapsulant 162 and conductive layer 164 using PVD, CVD, printing,
spin coating, spray coating, sintering or thermal oxidation. The
insulating layer 166 can be one or more layers of silicon dioxide
(SiO2), silicon nitride (Si3N4), silicon oxynitride (SiON),
tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), or other
material having similar insulating and structural properties. A
portion of insulating layer 166 is removed by an etching process to
expose conductive layer 164.
An electrically conductive layer 168 is formed over conductive
layer 164 and insulating layer 166 using a patterning and
deposition process such as PVD, CVD, sputtering, electrolytic
plating, and electroless plating. Conductive layer 168 forms a
multi-layer under bump metallization (UBM) including a barrier
layer and adhesion layer. In one embodiment, the barrier layer
contains Ni, titanium tungsten (TiW), chromium copper (CrCu),
nickel vanadium (NiV), platinum (Pt), or palladium (Pd). The
adhesion layer contains Al, titanium (Ti), chromium (Cr), or
titanium nitride (TiN). UBM 168 provides a low resistive
interconnect, as well as a barrier to Cu or solder diffusion.
An electrically conductive bump material is deposited over UBM 168
using an evaporation, electrolytic plating, electroless plating,
ball drop, or screen printing process. The bump material can be Al,
Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinations thereof, with
an optional flux solution. For example, the bump material can be
eutectic Sn/Pb, high-lead solder, or lead-free solder. The bump
material is bonded to UBM 168 using a suitable attachment or
bonding process. In one embodiment, the bump material is reflowed
by heating the material above its melting point to form spherical
balls or bumps 170. In some applications, bumps 170 are reflowed a
second time to improve electrical contact to UBM 168. The bumps can
also be compression bonded to UBM 168. Bumps 170 represent one type
of interconnect structure that can be formed over UBM 168. The
interconnect structure can also use stud bumps, micro bumps,
conductive pillars, or other electrical interconnect.
Semiconductor die 124 is a known good die (KGD) having been tested
and passed functionality, reliability, and interconnect
specifications. Semiconductor die 124 is packaged within
encapsulant 136 and serves as an inner KGD of wafer-level PiP 172.
The active and passive circuits of KGD 124 are electrically
connected through contact pads 126, bond wires 134, conductive
layer 122, conductive layer 144, conductive bumps 122a and 164a,
and contact pads 158 to the active and passive circuits of
semiconductor die 154. The active and passive circuits of KGD 124
and semiconductor die 154 are also electrically connected through
bond wires 150 to conductive layer 144 of substrate 142, and
through conductive layer 168 and bumps 170 to external devices. The
shallow via 121 and 167 with associated conductive bumps 122a and
164a have reduced the headroom needed for semiconductor die 154 and
to electrically interconnect semiconductor die 124 and 154 in PiP
172.
FIG. 4 shows an embodiment of wafer level PiP 174, similar to the
structure described in FIGS. 3a-3j, with IPD 176 formed over
encapsulant 162 adjacent to semiconductor die 154. IPD 176
constitutes one or more inductors, capacitors, and resistors for RF
signal processing. IPD 176 is electrically connected to conductive
layer 164.
FIG. 5 shows an embodiment of PiP 180, similar to the structure
described in FIGS. 3a-3j, with semiconductor package 138 mounted to
support layer 182 (instead of substrate 142) by adhesive layer 184.
Support layer 182 can be a carrier, stiffener, or heat sink. In the
case of a heat sink, support layer 182 can be Al, Cu, or another
material with high thermal conductivity to provide heat dissipation
for semiconductor die 122. An optional thermal interface material,
such as aluminum oxide, zinc oxide, boron nitride, or pulverized
silver, between heat sink 182 and semiconductor package 138 aids in
the distribution and dissipation of heat generated by semiconductor
die 124 and 154.
FIG. 6 shows an embodiment of PiP 190, similar to the structure
described in FIGS. 3a-3j, with semiconductor package 138 mounted to
electromagnetic interference (EMI) and radio frequency interference
(RFI) shielding layer 192 (instead of substrate 142) by adhesive
layer 194. Shielding layer 192 can be Cu, Al, ferrite or carbonyl
iron, stainless steel, nickel silver, low-carbon steel,
silicon-iron steel, foil, epoxy, conductive resin, and other metals
and composites capable of blocking or absorbing EMI, RFI, and other
inter-device interference. Shielding layer 192 can also be a
non-metal material such as carbon-black or aluminum flake to reduce
the effects of EMI and RFI. Shielding layer 192 is grounded through
bond wires 196 to conductive layer 122 and 164 to bumps 170.
FIG. 7a shows an embodiment of PiP 200, similar to the structure
described in FIGS. 3a-3i, with semiconductor package 138 mounted to
PCB 202 (instead of substrate 142) by adhesive layer 204. PCB 202
includes conductive layer 206 for electrical interconnect. Bond
wires 150 are electrically connected to conductive layer 206. Bumps
208 are formed on conductive layer 206. An insulating or
passivation layer 210 is formed over encapsulant 162 and conductive
layer 164a using PVD, CVD, printing, spin coating, spray coating,
sintering or thermal oxidation. The insulating layer 210 can be one
or more layers of SiO2, Si3N4, SiON, Ta2O5, Al2O3, or other
material having similar insulating and structural properties.
In FIG. 7b, a portion of insulating layer 210 is removed by an
etching process to expose conductive layer 164. An electrically
conductive layer 212 is formed over conductive layer 164 using a
patterning and metal deposition process such as PVD, CVD,
sputtering, electrolytic plating, and electroless plating.
Conductive layer 212 forms a multi-layer UBM including a barrier
layer and adhesion layer. In one embodiment, the barrier layer
contains Ni, NiV, TiW, CrCu, Pt, or Pd. The adhesion layer contains
Al, Ti, Cr, or TiN. UBM 168 provides a low resistive interconnect,
as well as a barrier to Cu or solder diffusion.
FIGS. 8a-8h illustrate, in relation to FIGS. 1 and 2a-2c, a process
of forming PiP mounted to a carrier with inner known good die
interconnected with conductive bumps formed in shallow vias. In
FIG. 8a, a substrate or carrier 220 contains temporary or
sacrificial base material such as silicon, polymer, polymer
composite, metal, ceramic, glass, glass epoxy, beryllium oxide, or
other suitable low-cost, rigid material or bulk semiconductor
material for structural support. In one embodiment, carrier 120 is
Cu. An adhesive layer 222, such as thermal epoxy or epoxy resin, is
formed over a surface of carrier 220. The semiconductor package 138
from FIG. 3d is mounted to carrier 220 with encapsulant 136
contacting adhesive layer 222, as shown in FIGS. 8a-8b.
In FIG. 8c, an adhesive layer 224, such as thermal epoxy or epoxy
resin, is formed over a portion of conductive layer 122 opposite
semiconductor die 124. A semiconductor die or component 226 is
mounted with back surface 228 to conductive layer 122 and contact
pads 230 on active surface 232 oriented upward away from conductive
layer 122. Active surface 232 contains analog or digital circuits
implemented as active devices, passive devices, conductive layers,
and dielectric layers formed within the die and electrically
interconnected according to the electrical design and function of
the die. For example, the circuit may include one or more
transistors, diodes, and other circuit elements formed within
active surface 232 to implement analog circuits or digital
circuits, such as DSP, ASIC, memory, or other signal processing
circuit. Semiconductor die 226 may also contain IPDs, such as
inductors, capacitors, and resistors, for RF signal processing.
In FIG. 8d, an encapsulant or molding compound 234 is deposited
over semiconductor package 138 and carrier 220 using a paste
printing, compressive molding, transfer molding, liquid encapsulant
molding, vacuum lamination, spin coating, or other suitable
applicator. Encapsulant 234 can be polymer composite material, such
as epoxy resin with filler, epoxy acrylate with filler, or polymer
with proper filler. Encapsulant 234 is non-conductive and
environmentally protects the semiconductor device from external
elements and contaminants. A plurality of shallow vias 236a and
236b is formed in the surface of encapsulant 234 by an etching
process to expose conductive bumps 122a and contact pads 230.
In FIG. 8e, an electrically conductive layer 238 is formed over
encapsulant 234, conductive bumps 122a, and contact pads 230 using
a patterning and metal deposition process such as PVD, CVD,
sputtering, electrolytic plating, and electroless plating. A
portion of conductive layer 238, denoted as conductive bumps 238a
and 238b, resides in vias 236a and 236b. Conductive layer 238 can
be one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable
electrically conductive material. Conductive layer 238 operates as
an RDL and provides electrical interconnect between the active and
passive circuits of semiconductor die 226 and conductive layer 122.
Conductive bumps 238a are electrically connected to conductive
bumps 122a and contact pads 230. Other portions of conductive layer
238 can be electrically common or electrically isolated depending
on the design and function of the semiconductor device.
In FIG. 8f, an insulating or passivation layer 240 is formed over
encapsulant 234 and conductive layer 238 using PVD, CVD, printing,
spin coating, spray coating, sintering or thermal oxidation. The
insulating layer 240 can be one or more layers of SiO2, Si3N4,
SiON, Ta2O5, Al2O3, or other material having similar insulating and
structural properties. A portion of insulating layer 240 is removed
by an etching process to expose conductive layer 238.
An electrically conductive layer 242 is formed over conductive
layer 238 using a patterning and deposition process such as PVD,
CVD, sputtering, electrolytic plating, and electroless plating.
Conductive layer 242 forms a multi-layer UBM including a barrier
layer and adhesion layer. In one embodiment, the barrier layer
contains Ni, NiV, TiW, CrCu, Pt, or Pd. The adhesion layer contains
Al, Ti, Cr, or TiN. UBM 242 provides a low resistive interconnect,
as well as a barrier to Cu or solder diffusion.
An electrically conductive bump material is deposited over UBM 242
using an evaporation, electrolytic plating, electroless plating,
ball drop, or screen printing process. The bump material can be Al,
Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinations thereof, with
an optional flux solution. For example, the bump material can be
eutectic Sn/Pb, high-lead solder, or lead-free solder. The bump
material is bonded to UBM 242 using a suitable attachment or
bonding process. In one embodiment, the bump material is reflowed
by heating the material above its melting point to form spherical
balls or bumps 244. In some applications, bumps 244 are reflowed a
second time to improve electrical contact to UBM 242. The bumps can
also be compression bonded to UBM 242. Bumps 244 represent one type
of interconnect structure that can be formed over UBM 242. The
interconnect structure can also use stud bumps, micro bumps,
conductive pillars, or other electrical interconnect.
In FIG. 8g, temporary carrier 220 is removed by chemical etching,
mechanical peel-off, CMP, mechanical grinding, thermal bake, laser
scanning, or wet stripping. Adhesive layer 222 remains exposed in
PiP 246. FIG. 8h shows PiP 248 with both carrier 220 and adhesive
layer 222 removed.
Semiconductor die 124 is a known good die (KGD) having been tested
and passed functionality, reliability, and interconnect
specifications. Semiconductor die 124 is packaged within
encapsulant 136 and serves as an inner KGD of PiP 246. The active
and passive circuits of KGD 124 are electrically connected through
contact pads 126, bond wires 134, conductive layer 122, conductive
layer 144, conductive bumps 122a and 238a, and contact pads 230 to
the active and passive circuits of semiconductor die 226. The
active and passive circuits of KGD 124 and semiconductor die 226
are also electrically connected through conductive layer 242 and
bumps 244 to external devices. The shallow vias 121, 167, and 236
with associated conductive bumps 122a, 164a, and 238a have reduced
the headroom needed for semiconductor die 226 and to electrically
interconnect semiconductor die 124 and 226 in PiP 246.
While one or more embodiments of the present invention have been
illustrated in detail, the skilled artisan will appreciate that
modifications and adaptations to those embodiments may be made
without departing from the scope of the present invention as set
forth in the following claims.
* * * * *