U.S. patent number 7,915,174 [Application Number 12/177,668] was granted by the patent office on 2011-03-29 for dielectric stack containing lanthanum and hafnium. This patent grant is currently assigned to Micron Technology, Inc.. Invention is credited to Kie Y. Ahn, Leonard Forbes.
United States Patent | 7,915,174 |
Ahn , et al. | March 29, 2011 |
Dielectric layers containing a dielectric layer including lanthanum and hafnium and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
Inventors: | Ahn; Kie Y. (Chappaqua, NY), Forbes; Leonard (Corvallis, OR) |
---|---|
Assignee: | Micron Technology, Inc. (Boise,
ID) |
Family ID: | 36584571 |
Appl. No.: | 12/177,668 |
Filed: | July 22, 2008 |
Document Identifier | Publication Date | |
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US 20090032910 A1 | Feb 5, 2009 | |
Application Number | Filing Date | Patent Number | Issue Date | ||
---|---|---|---|---|---|
11584229 | Oct 20, 2006 | 7411237 | |||
11010529 | Dec 13, 2004 | 7235501 | |||
Current U.S. Class: | 438/722; 257/296; 257/E21.646; 438/721; 257/E21.247; 438/720 |
Current CPC Class: | H01L 21/02194 (20130101); H01L 21/3141 (20130101); H01L 21/31645 (20130101); H01L 21/02181 (20130101); C23C 16/45553 (20130101); C23C 16/40 (20130101); H01L 21/022 (20130101); H01L 21/0228 (20130101); C23C 16/45531 (20130101); H01L 2924/0002 (20130101); H01L 2924/0002 (20130101); H01L 2924/00 (20130101) |
Current International Class: | H01L 21/461 (20060101) |
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