Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide Patent Grant Bojarczuk, Jr. , et al. July 10, 2 [International Business Machines Corporation]

Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide

Bojarczuk, Jr. , et al. July 10, 2

Patent Grant 7242055

U.S. patent number 7,242,055 [Application Number 10/988,733] was granted by the patent office on 2007-07-10 for nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide. This patent grant is currently assigned to International Business Machines Corporation. Invention is credited to Nestor A. Bojarczuk, Jr., Cyril Cabral, Jr., Eduard A. Cartier, Martin M. Frank, Evgeni P. Gousev, Supratik Guha, Paul C. Jamison, Rajarao Jammy, Vijay Narayanan, Vamsi K. Paruchuri.

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