| Patent | Date |
|---|
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
Grant 11,251,285 - Bao , et al. February 15, 2 | 2022-02-15 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 11,121,209 - Ando , et al. September 14, 2 | 2021-09-14 |
Oxide isolated fin-type field-effect transistors
Grant 11,094,801 - Bao , et al. August 17, 2 | 2021-08-17 |
Method For Controlling The Forming Voltage In Resistive Random Access Memory Devices
App 20210234096 - Consiglio; Steven ; et al. | 2021-07-29 |
Method for controlling the forming voltage in resistive random access memory devices
Grant 10,991,881 - Consiglio , et al. April 27, 2 | 2021-04-27 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 10,978,551 - Ando , et al. April 13, 2 | 2021-04-13 |
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
Grant 10,930,566 - Edge , et al. February 23, 2 | 2021-02-23 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
Grant 10,886,362 - Ando , et al. January 5, 2 | 2021-01-05 |
Method For Controlling The Forming Voltage In Resistive Random Access Memory Devices
App 20200381624 - Consiglio; Steven ; et al. | 2020-12-03 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,833,148 - Ando , et al. November 10, 2 | 2020-11-10 |
Oxide Isolated Fin-type Field-effect Transistors
App 20200243670 - Bao; Ruqiang ; et al. | 2020-07-30 |
Oxide isolated fin-type field-effect transistors
Grant 10,680,083 - Bao , et al. | 2020-06-09 |
Complementary Metal Oxide Semiconductor Replacement Gate High-k Metal Gate Devices With Work Function Adjustments
App 20200144134 - Edge; Lisa F. ; et al. | 2020-05-07 |
Oxide Isolated Fin-type Field-effect Transistors
App 20200091319 - Bao; Ruqiang ; et al. | 2020-03-19 |
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
Grant 10,580,881 - Bao , et al. | 2020-03-03 |
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
Grant 10,573,565 - Edge , et al. Feb | 2020-02-25 |
Approach To Control Over-etching Of Bottom Spacers In Vertical Fin Field Effect Transistor Devices
App 20200013877 - Bao; Ruqiang ; et al. | 2020-01-09 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETs
Grant 10,395,989 - Bao , et al. A | 2019-08-27 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,396,146 - Ando , et al. A | 2019-08-27 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,381,433 - Ando , et al. A | 2019-08-13 |
Complementary Metal Oxide Semiconductor Replacement Gate High-k Metal Gate Devices With Work Function Adjustments
App 20190189524 - Edge; Lisa F. ; et al. | 2019-06-20 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-VT for VFETs
Grant 10,312,147 - Bao , et al. June 4, 2 | 2019-06-04 |
Complementary metal oxide semiconductor replacement gate high-K metal gate devices with work function adjustments
Grant 10,304,746 - Edge , et al. | 2019-05-28 |
Uniform threshold voltage for nanosheet devices
Grant 10,297,671 - Bao , et al. | 2019-05-21 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
Grant 10,290,700 - Ando , et al. | 2019-05-14 |
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
Grant 10,283,620 - Bao , et al. | 2019-05-07 |
Controlling threshold voltage in nanosheet transistors
Grant 10,170,316 - Jagannathan , et al. J | 2019-01-01 |
Uniform Threshold Voltage For Nanosheet Devices
App 20180350935 - Bao; Ruqiang ; et al. | 2018-12-06 |
Multi-layer Work Function Metal Gates With Similar Gate Thickness To Achieve Multi-vt For Vfets
App 20180294191 - Bao; Ruqiang ; et al. | 2018-10-11 |
Multi-layer Work Function Metal Gates With Similar Gate Thickness To Achieve Multi-vt For Vfets
App 20180294192 - Bao; Ruqiang ; et al. | 2018-10-11 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277623 - Ando; Takashi ; et al. | 2018-09-27 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277621 - Ando; Takashi ; et al. | 2018-09-27 |
Uniform threshold voltage for nanosheet devices
Grant 10,084,055 - Bao , et al. September 25, 2 | 2018-09-25 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240863 - Ando; Takashi ; et al. | 2018-08-23 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240861 - Ando; Takashi ; et al. | 2018-08-23 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240862 - Ando; Takashi ; et al. | 2018-08-23 |
Uniform Threshold Voltage For Nanosheet Devices
App 20180226484 - Bao; Ruqiang ; et al. | 2018-08-09 |
Approach To Control Over-etching Of Bottom Spacers In Vertical Fin Field Effect Transistor Devices
App 20180212040 - Bao; Ruqiang ; et al. | 2018-07-26 |
Approach To Control Over-etching Of Bottom Spacers In Vertical Fin Field Effect Transistor Devices
App 20180212037 - Bao; Ruqiang ; et al. | 2018-07-26 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180212018 - Ando; Takashi ; et al. | 2018-07-26 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180197944 - Ando; Takashi ; et al. | 2018-07-12 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180197943 - Ando; Takashi ; et al. | 2018-07-12 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180197945 - Ando; Takashi ; et al. | 2018-07-12 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,020,359 - Ando , et al. July 10, 2 | 2018-07-10 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETS
Grant 10,002,791 - Bao , et al. June 19, 2 | 2018-06-19 |
Controlling Threshold Voltage In Nanosheet Transistors
App 20180090326 - Jagannathan; Hemanth ; et al. | 2018-03-29 |
Controlling threshold voltage in nanosheet transistors
Grant 9,818,616 - Jagannathan , et al. November 14, 2 | 2017-11-14 |
Complementary Metal Oxide Semiconductor Replacement Gate High-k Metal Gate Devices With Work Function Adjustments
App 20170154825 - Edge; Lisa F. ; et al. | 2017-06-01 |
Controlling threshold voltage in nanosheet transistors
Grant 9,653,537 - Jagannathan , et al. May 16, 2 | 2017-05-16 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,627,214 - Jagannathan , et al. April 18, 2 | 2017-04-18 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,514,948 - Jagannathan , et al. December 6, 2 | 2016-12-06 |
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
Grant 9,490,255 - Edge , et al. November 8, 2 | 2016-11-08 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20160315166 - Jagannathan; Hemanth ; et al. | 2016-10-27 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20160314977 - Jagannathan; Hemanth ; et al. | 2016-10-27 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,385,207 - Jagannathan , et al. July 5, 2 | 2016-07-05 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150311127 - Jagannathan; Hemanth ; et al. | 2015-10-29 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150311303 - Jagannathan; Hemanth ; et al. | 2015-10-29 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150279937 - Jagannathan; Hemanth ; et al. | 2015-10-01 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150279746 - Jagannathan; Hemanth ; et al. | 2015-10-01 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20150171182 - Jagannathan; Hemanth ; et al. | 2015-06-18 |
Structure and method to obtain EOT scaled dielectric stacks
Grant 9,059,314 - Jagannathan , et al. June 16, 2 | 2015-06-16 |
Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials
Grant 9,035,391 - Reznicek , et al. May 19, 2 | 2015-05-19 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,006,094 - Jagannathan , et al. April 14, 2 | 2015-04-14 |
Fin Field Effect Transistors Having A Nitride Containing Spacer To Reduce Lateral Growth Of Epitaxially Deposited Semiconductor Materials
App 20140264387 - Reznicek; Alexander ; et al. | 2014-09-18 |
Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials
Grant 8,802,513 - Reznicek , et al. August 12, 2 | 2014-08-12 |
Fin Field Effect Transistors Having A Nitride Containing Spacer To Reduce Lateral Growth Of Epitaxially Deposited Semiconductor Materials
App 20140117422 - Reznicek; Alexander ; et al. | 2014-05-01 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20130277743 - Jagannathan; Hemanth ; et al. | 2013-10-24 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20130280902 - Jagannathan; Hemanth ; et al. | 2013-10-24 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20130005156 - Jagannathan; Hemanth ; et al. | 2013-01-03 |
Structure and method to obtain EOT scaled dielectric stacks
Grant 8,304,836 - Jagannathan , et al. November 6, 2 | 2012-11-06 |
Method of forming metal/high-.kappa. gate stacks with high mobility
Grant 8,153,514 - Andreoni , et al. April 10, 2 | 2012-04-10 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20110115027 - Jagannathan; Hemanth ; et al. | 2011-05-19 |
Low threshold voltage semiconductor device with dual threshold voltage control means
Grant 7,858,500 - Cartier , et al. December 28, 2 | 2010-12-28 |
Low threshold voltage semiconductor device with dual threshold voltage control means
Grant 7,655,994 - Cartier , et al. February 2, 2 | 2010-02-02 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
Grant 7,566,938 - Cabral, Jr. , et al. July 28, 2 | 2009-07-28 |
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY
App 20080293259 - Andreoni; Wanda ; et al. | 2008-11-27 |
Low Threshold Voltage Semiconductor Device With Dual Threshold Voltage Control Means
App 20080182389 - Cartier; Eduard A. ; et al. | 2008-07-31 |
Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
Grant 7,242,055 - Bojarczuk, Jr. , et al. July 10, 2 | 2007-07-10 |
Low threshold voltage semiconductor device with dual threshold voltage control means
App 20070090471 - Cartier; Eduard A. ; et al. | 2007-04-26 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
Grant 7,169,674 - Bojarczuk, Jr. , et al. January 30, 2 | 2007-01-30 |
Method of forming metal/high-k gate stacks with high mobility
App 20060289903 - Andreoni; Wanda ; et al. | 2006-12-28 |
Method of forming metal/high-k gate stacks with high mobility
Grant 7,115,959 - Andreoni , et al. October 3, 2 | 2006-10-03 |
Nitrided ultra thin gate dielectrics
Grant 7,109,559 - Khare , et al. September 19, 2 | 2006-09-19 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
App 20060138603 - Cabral; Cyril JR. ; et al. | 2006-06-29 |
Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
App 20060102968 - Bojarczuk; Nestor A. JR. ; et al. | 2006-05-18 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
Grant 6,982,230 - Cabral, Jr. , et al. January 3, 2 | 2006-01-03 |
Method of forming metal/high-k gate stacks with high mobility
App 20050280105 - Andreoni, Wanda ; et al. | 2005-12-22 |
Method for forming metal replacement gate of high performance
Grant 6,921,711 - Cabral, Jr. , et al. July 26, 2 | 2005-07-26 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
App 20050156257 - Bojarczuk, Nestor Alexander JR. ; et al. | 2005-07-21 |
Method for improved plasma nitridation of ultra thin gate dielectrics
Grant 6,893,979 - Khare , et al. May 17, 2 | 2005-05-17 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
Grant 6,891,231 - Bojarczuk, Jr. , et al. May 10, 2 | 2005-05-10 |
Nitrided ultrathin gate dielectrics
App 20050087822 - Khare, Mukesh V. ; et al. | 2005-04-28 |
Structure And Method For Metal Replacement Gate Of High Performance
App 20050051854 - Cabral, Cyril JR. ; et al. | 2005-03-10 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
App 20040092073 - Cabral, Cyril JR. ; et al. | 2004-05-13 |
Thermally stable poly-Si/high dielectric constant material interfaces
Grant 6,573,197 - Callegari , et al. June 3, 2 | 2003-06-03 |
High mobility FETS using A1203 as a gate oxide
Grant 6,511,876 - Buchanan , et al. January 28, 2 | 2003-01-28 |
High Mobility Fets Using Al2o3 As A Gate Oxide
App 20020197789 - Buchanan, Douglas A. ; et al. | 2002-12-26 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
App 20020190302 - Bojarczuk, Alexander JR. ; et al. | 2002-12-19 |
Thermally stable poly-Si/high dielectric constant material interfaces
App 20020151142 - Callegari, Alessandro C. ; et al. | 2002-10-17 |
Method for improved plasma nitridation of ultra thin gate dielectrics
App 20020130377 - Khare, Mukesh V. ; et al. | 2002-09-19 |
Retrograde openings in thin films
Grant 6,355,567 - Halle , et al. March 12, 2 | 2002-03-12 |
Hard mask process to prevent surface roughness for selective dielectric etching
Grant 6,345,399 - Jamison , et al. February 12, 2 | 2002-02-12 |
Adhesion of silicon carbide films
Grant 6,252,295 - Cote , et al. June 26, 2 | 2001-06-26 |
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