| Patent | Date |
|---|
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
Grant 11,393,725 - Bao , et al. July 19, 2 | 2022-07-19 |
Topological Semi-metal Interconnects
App 20220157733 - Chen; Ching-Tzu ; et al. | 2022-05-19 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end
Grant 11,244,999 - Frank , et al. February 8, 2 | 2022-02-08 |
Device with pure silicon oxide layer on silicon-germanium layer
Grant 11,217,450 - Ando , et al. January 4, 2 | 2022-01-04 |
Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology
Grant 11,216,595 - Boivie , et al. January 4, 2 | 2022-01-04 |
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
Grant 11,195,762 - Bao , et al. December 7, 2 | 2021-12-07 |
Conformal replacement gate electrode for short channel devices
Grant 11,195,929 - Ando , et al. December 7, 2 | 2021-12-07 |
Resistive switching memory with replacement metal electrode
Grant 11,158,795 - Ando , et al. October 26, 2 | 2021-10-26 |
Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device
Grant 11,152,214 - Ando , et al. October 19, 2 | 2021-10-19 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 11,121,209 - Ando , et al. September 14, 2 | 2021-09-14 |
Rram Structures In The Beol
App 20210280638 - Li; Baozhen ; et al. | 2021-09-09 |
Method For Controlling The Forming Voltage In Resistive Random Access Memory Devices
App 20210234096 - Consiglio; Steven ; et al. | 2021-07-29 |
High-resistance memory devices
Grant 11,043,535 - Ando , et al. June 22, 2 | 2021-06-22 |
Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages
Grant 11,031,301 - Bao , et al. June 8, 2 | 2021-06-08 |
Encryption engine with an undetectable/tamper proof private key in late node CMOS technology
Grant 10,997,321 - Boivie , et al. May 4, 2 | 2021-05-04 |
Method for controlling the forming voltage in resistive random access memory devices
Grant 10,991,881 - Consiglio , et al. April 27, 2 | 2021-04-27 |
Self-aligned Metal Gate With Poly Silicide For Vertical Transport Field-effect Transistors
App 20210118881 - Anderson; Brent A. ; et al. | 2021-04-22 |
Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages
Grant 10,985,075 - Bao , et al. April 20, 2 | 2021-04-20 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 10,978,551 - Ando , et al. April 13, 2 | 2021-04-13 |
Self-aligned metal gate with poly silicide for vertical transport field-effect transistors
Grant 10,957,696 - Anderson , et al. March 23, 2 | 2021-03-23 |
Three-terminal copper-driven neuromorphic device
Grant 10,957,937 - Todorov , et al. March 23, 2 | 2021-03-23 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,916,432 - Ando , et al. February 9, 2 | 2021-02-09 |
Oxygen vacancy and filament-loss protection for resistive switching devices
Grant 10,903,425 - Ando , et al. January 26, 2 | 2021-01-26 |
Gate first technique in vertical transport FET using doped silicon gates with silicide
Grant 10,892,339 - Bao , et al. January 12, 2 | 2021-01-12 |
Method For Controlling The Forming Voltage In Resistive Random Access Memory Devices
App 20200381624 - Consiglio; Steven ; et al. | 2020-12-03 |
Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
Grant 10,833,150 - Frank , et al. November 10, 2 | 2020-11-10 |
Gate First Technique In Vertical Transport Fet Using Doped Silicon Gates With Silicide
App 20200295147 - BAO; RUQIANG ; et al. | 2020-09-17 |
Three-Terminal Copper-Driven Neuromorphic Device
App 20200287236 - Todorov; Teodor K. ; et al. | 2020-09-10 |
Shared metal gate stack with tunable work function
Grant 10,756,194 - Bao , et al. A | 2020-08-25 |
Resistive Switching Memory With Replacement Metal Electrode
App 20200263620 - Ando; Takashi ; et al. | 2020-08-20 |
Resistive switching memory with replacement metal electrode
Grant 10,727,407 - Ando , et al. | 2020-07-28 |
Oxygen-Free Plasma Etching For Contact Etching of Resistive Random Access Memory
App 20200203607 - Koty; Devi ; et al. | 2020-06-25 |
Protection of high-K dielectric during reliability anneal on nanosheet structures
Grant 10,692,985 - Loubet , et al. | 2020-06-23 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
Grant 10,686,040 - Frank , et al. | 2020-06-16 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
Grant 10,686,039 - Frank , et al. | 2020-06-16 |
Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap
Grant 10,672,671 - Ando , et al. | 2020-06-02 |
Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor
Grant 10,672,881 - Ando , et al. | 2020-06-02 |
Structure and method for multiple threshold voltage definition in advanced CMOS device technology
Grant 10,636,792 - Jagannathan , et al. | 2020-04-28 |
Gate Formation Scheme For N-type And P-type Transistors Having Separately Tuned Threshold Voltages
App 20200118888 - Bao; Ruqiang ; et al. | 2020-04-16 |
Gate Formation Scheme For N-type And P-type Transistors Having Separately Tuned Threshold Voltages
App 20200118889 - Bao; Ruqiang ; et al. | 2020-04-16 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,615,043 - Ando , et al. | 2020-04-07 |
Tapered metal nitride structure
Grant 10,615,250 - Frank , et al. | 2020-04-07 |
Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap
Grant 10,593,600 - Ando , et al. | 2020-03-17 |
Oxygen Vacancy And Filament-loss Protection For Resistive Switching Devices
App 20200075860 - Ando; Takashi ; et al. | 2020-03-05 |
Patterned Gate Dielectrics For Iii-v-based Cmos Circuits
App 20200066724 - Ando; Takashi ; et al. | 2020-02-27 |
Conformal Replacement Gate Electrode For Short Channel Devices
App 20200066859 - Ando; Takashi ; et al. | 2020-02-27 |
Resistive Switching Memory With Replacement Metal Electrode
App 20200052207 - Ando; Takashi ; et al. | 2020-02-13 |
Patterned gate dielectrics for III-V-based CMOS circuits
Grant 10,553,584 - Ando , et al. Fe | 2020-02-04 |
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
Grant 10,546,787 - Bao , et al. Ja | 2020-01-28 |
Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication
Grant 10,541,151 - Lee , et al. Ja | 2020-01-21 |
Multi-metal Dipole Doping To Offer Multi-threshold Voltage Pairs Without Channel Doping For Highly Scaling Cmos Device
App 20200020594 - Bao; Ruqiang ; et al. | 2020-01-16 |
Multi-metal Dipole Doping To Offer Multi-threshold Voltage Pairs Without Channel Doping For Highly Scaling Cmos Device
App 20200020595 - Bao; Ruqiang ; et al. | 2020-01-16 |
Disposable Laser/flash Anneal Absorber For Embedded Neuromorphic Memory Device Fabrication
App 20200020542 - Lee; Kam-Leung ; et al. | 2020-01-16 |
Fast Recrystallization Of Hafnium Or Zirconium Based Oxides In Insulator-metal Structures
App 20200020762 - Frank; Martin M. ; et al. | 2020-01-16 |
Encryption Engine With An Undetectable/tamper-proof Private Key In Late Node Cmos Technology
App 20200019731 - Boivie; Richard H. ; et al. | 2020-01-16 |
Encryption Engine With An Undetectable/tamper-proof Private Key In Late Node Cmos Technology
App 20200019732 - Boivie; Richard H. ; et al. | 2020-01-16 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20200020539 - Ando; Takashi ; et al. | 2020-01-16 |
Conformal replacement gate electrode for short channel devices
Grant 10,529,815 - Ando , et al. J | 2020-01-07 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,529,573 - Ando , et al. J | 2020-01-07 |
Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap
Grant 10,504,799 - Ando , et al. Dec | 2019-12-10 |
Multi-metal Dipole Doping To Offer Multi-threshold Voltage Pairs Without Channel Doping For Highly Scaling Cmos Device
App 20190371676 - Bao; Ruqiang ; et al. | 2019-12-05 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20190371611 - Ando; Takashi ; et al. | 2019-12-05 |
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Back-End
App 20190326387 - Frank; Martin M. ; et al. | 2019-10-24 |
Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology
Grant 10,423,805 - Boivie , et al. Sept | 2019-09-24 |
Structure And Method For Multiple Threshold Voltage Definition In Advanced Cmos Device Technology
App 20190287970 - Jagannathan; Hemanth ; et al. | 2019-09-19 |
Patterned gate dielectrics for III-V-based CMOS circuits
Grant 10,396,077 - Ando , et al. A | 2019-08-27 |
Structure and method for multiple threshold voltage definition in advanced CMOS device technology
Grant 10,396,076 - Jagannathan , et al. A | 2019-08-27 |
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Front-End
App 20190252500 - Frank; Martin M. ; et al. | 2019-08-15 |
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Front-End
App 20190252499 - Frank; Martin M. ; et al. | 2019-08-15 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end
Grant 10,381,431 - Frank , et al. A | 2019-08-13 |
Ferroelectric Devices Free Of Extended Grain Boundaries
App 20190245056 - Bruley; John ; et al. | 2019-08-08 |
Method to improve reliability of replacement gate device
Grant 10,361,281 - Ando , et al. | 2019-07-23 |
Formation Of Full Metal Gate To Suppress Interficial Layer Growth
App 20190198500 - BAO; RUQIANG ; et al. | 2019-06-27 |
Stacked capacitor with symmetric leakage and break-down behaviors
Grant 10,332,957 - Ando , et al. | 2019-06-25 |
Integrated metal gate CMOS devices
Grant 10,332,883 - Bao , et al. | 2019-06-25 |
Protection Of High-k Dielectric During Reliability Anneal On Nanosheet Structures
App 20190189766 - Loubet; Nicolas J. ; et al. | 2019-06-20 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
Grant 10,319,818 - Frank , et al. | 2019-06-11 |
Field effect transistor stack with tunable work function
Grant 10,312,157 - Bao , et al. | 2019-06-04 |
Protection of high-K dielectric during reliability anneal on nanosheet structures
Grant 10,304,936 - Loubet , et al. | 2019-05-28 |
Uniform threshold voltage for nanosheet devices
Grant 10,297,671 - Bao , et al. | 2019-05-21 |
Formation of full metal gate to suppress interficial layer growth
Grant 10,297,598 - Bao , et al. | 2019-05-21 |
Binary metal oxide based interlayer for high mobility channels
Grant 10,283,610 - Narayanan , et al. | 2019-05-07 |
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Back-End
App 20190131383 - Frank; Martin M. ; et al. | 2019-05-02 |
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Front-End
App 20190131407 - Frank; Martin M. ; et al. | 2019-05-02 |
Conformal Replacement Gate Electrode For Short Channel Devices
App 20190131418 - Ando; Takashi ; et al. | 2019-05-02 |
Resistive switching memory stack for three-dimensional structure
Grant 10,270,029 - Ando , et al. | 2019-04-23 |
High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 10,262,999 - Ando , et al. | 2019-04-16 |
Dual channel CMOS having common gate stacks
Grant 10,249,540 - Ando , et al. | 2019-04-02 |
Field effect transistor stack with tunable work function
Grant 10,249,543 - Bao , et al. | 2019-04-02 |
Shared metal gate stack with tunable work function
Grant 10,243,055 - Bao , et al. | 2019-03-26 |
Dual channel CMOS having common gate stacks
Grant 10,229,856 - Ando , et al. | 2019-03-12 |
Tapered Metal Nitride Structure
App 20190067413 - Frank; Martin M. ; et al. | 2019-02-28 |
Binary metal oxide based interlayer for high mobility channels
Grant 10,217,834 - Narayanan , et al. Feb | 2019-02-26 |
High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 10,217,745 - Ando , et al. Feb | 2019-02-26 |
Binary metal oxide based interlayer for high mobility channels
Grant 10,217,835 - Narayanan , et al. Feb | 2019-02-26 |
Shared Metal Gate Stack With Tunable Work Function
App 20190027572 - Bao; Ruqiang ; et al. | 2019-01-24 |
Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs
Grant 10,153,201 - Bu , et al. Dec | 2018-12-11 |
Uniform Threshold Voltage For Nanosheet Devices
App 20180350935 - Bao; Ruqiang ; et al. | 2018-12-06 |
Tapered metal nitride structure
Grant 10,147,782 - Frank , et al. De | 2018-12-04 |
Dual Channel Cmos Having Common Gate Stacks
App 20180337097 - Ando; Takashi ; et al. | 2018-11-22 |
Dual Channel Cmos Having Common Gate Stacks
App 20180337098 - Ando; Takashi ; et al. | 2018-11-22 |
Field Effect Transistor Gate Stack
App 20180330996 - Bao; Ruqiang ; et al. | 2018-11-15 |
Self-aligned Metal Gate With Poly Silicide For Vertical Transport Field-effect Transistors
App 20180331101 - Anderson; Brent A. ; et al. | 2018-11-15 |
Patterned Gate Dielectrics For Iii-v-based Cmos Circuits
App 20180308844 - Ando; Takashi ; et al. | 2018-10-25 |
Patterned Gate Dielectrics For Iii-v-based Cmos Circuits
App 20180308845 - Ando; Takashi ; et al. | 2018-10-25 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277623 - Ando; Takashi ; et al. | 2018-09-27 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277621 - Ando; Takashi ; et al. | 2018-09-27 |
Structure And Method For Multiple Threshold Voltage Definition In Advanced Cmos Device Technology
App 20180277540 - Jagannathan; Hemanth ; et al. | 2018-09-27 |
Uniform threshold voltage for nanosheet devices
Grant 10,084,055 - Bao , et al. September 25, 2 | 2018-09-25 |
Field effect transistor gate stack
Grant 10,079,182 - Bao , et al. September 18, 2 | 2018-09-18 |
Patterned gate dielectrics for III-V-based CMOS circuits
Grant 10,062,694 - Ando , et al. August 28, 2 | 2018-08-28 |
Patterned gate dielectrics for III-V-based CMOS circuits
Grant 10,062,693 - Ando , et al. August 28, 2 | 2018-08-28 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20180240799 - Ando; Takashi ; et al. | 2018-08-23 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20180233370 - Ando; Takashi ; et al. | 2018-08-16 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20180233369 - Ando; Takashi ; et al. | 2018-08-16 |
Uniform Threshold Voltage For Nanosheet Devices
App 20180226484 - Bao; Ruqiang ; et al. | 2018-08-09 |
Resistive Switching Memory Stack For Three-dimensional Structure
App 20180219155 - Ando; Takashi ; et al. | 2018-08-02 |
Formation Of Full Metal Gate To Suppress Interficial Layer Growth
App 20180204839 - BAO; RUQIANG ; et al. | 2018-07-19 |
Interoperable machine learning platform
Grant 10,026,041 - Narayanan , et al. July 17, 2 | 2018-07-17 |
Method To Improve Reliability Of Replacement Gate Device
App 20180197972 - Ando; Takashi ; et al. | 2018-07-12 |
High-resistance Memory Devices
App 20180197917 - Ando; Takashi ; et al. | 2018-07-12 |
Shared Metal Gate Stack With Tunable Work Function
App 20180190784 - Bao; Ruqiang ; et al. | 2018-07-05 |
Encryption Engine With An Undetectable/tamper-proof Private Key In Late Node Cmos Technology
App 20180181774 - Boivie; Richard H. ; et al. | 2018-06-28 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,008,386 - Ando , et al. June 26, 2 | 2018-06-26 |
Binary Metal Oxide Based Interlayer For High Mobility Channels
App 20180175156 - Narayanan; Vijay ; et al. | 2018-06-21 |
Shared metal gate stack with tunable work function
Grant 10,002,937 - Bao , et al. June 19, 2 | 2018-06-19 |
High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 10,002,871 - Ando , et al. June 19, 2 | 2018-06-19 |
Dual channel structures with multiple threshold voltages
Grant 9,997,519 - Bao , et al. June 12, 2 | 2018-06-12 |
Selective and conformal passivation layer for 3D high-mobility channel devices
Grant 9,984,940 - Chu , et al. May 29, 2 | 2018-05-29 |
Combined reactive gas species for high-mobility channel passivation
Grant 9,984,870 - Ando , et al. May 29, 2 | 2018-05-29 |
Resistive switching memory stack for three-dimensional structure
Grant 9,985,206 - Ando , et al. May 29, 2 | 2018-05-29 |
Method to improve reliability of replacement gate device
Grant 9,972,697 - Ando , et al. May 15, 2 | 2018-05-15 |
Binary metal oxide based interlayer for high mobility channels
Grant 9,972,695 - Narayanan , et al. May 15, 2 | 2018-05-15 |
Method to improve reliability of replacement gate device
Grant 9,960,252 - Ando , et al. May 1, 2 | 2018-05-01 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor
Grant 9,960,233 - Krishnan , et al. May 1, 2 | 2018-05-01 |
Integrated metal gate CMOS devices
Grant 9,941,282 - Bao , et al. April 10, 2 | 2018-04-10 |
Ferroelectric Gate Dielectric With Scaled Interfacial Layer For Steep Sub-threshold Slope Field-effect Transistor
App 20180090591 - Ando; Takashi ; et al. | 2018-03-29 |
Integrated Metal Gate Cmos Devices
App 20180090381 - BAO; Ruqiang ; et al. | 2018-03-29 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20180076040 - Ando; Takashi ; et al. | 2018-03-15 |
Trench metal insulator metal capacitor with oxygen gettering layer
Grant 9,911,597 - Ando , et al. March 6, 2 | 2018-03-06 |
Integrated metal gate CMOS devices
Grant 9,899,264 - Bao , et al. February 20, 2 | 2018-02-20 |
Field Effect Transistor Stack With Tunable Work Function
App 20180047640 - Bao; Ruqiang ; et al. | 2018-02-15 |
Field Effect Transistor Stack With Tunable Work Function
App 20180047639 - Bao; Ruqiang ; et al. | 2018-02-15 |
Binary Metal Oxide Based Interlayer For High Mobility Channels
App 20180040708 - Narayanan; Vijay ; et al. | 2018-02-08 |
Binary Metal Oxide Based Interlayer For High Mobility Channels
App 20180040709 - Narayanan; Vijay ; et al. | 2018-02-08 |
Binary Metal Oxide Based Interlayer For High Mobility Channels
App 20180040710 - Narayanan; Vijay ; et al. | 2018-02-08 |
Tapered Metal Nitride Structure
App 20180019299 - Frank; Martin M. ; et al. | 2018-01-18 |
Combined Reactive Gas Species For High-mobility Channel Passivation
App 20180005821 - Ando; Takashi ; et al. | 2018-01-04 |
Integrated Metal Gate Cmos Devices
App 20180006033 - Bao; Ruqiang ; et al. | 2018-01-04 |
Integrated Metal Gate Cmos Devices
App 20180005891 - Bao; Ruqiang ; et al. | 2018-01-04 |
Stacked Capacitor With Symmetric Leakage And Break-down Behaviors
App 20180006108 - Ando; Takashi ; et al. | 2018-01-04 |
High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 9,859,279 - Ando , et al. January 2, 2 | 2018-01-02 |
Field effect transistor stack with tunable work function
Grant 9,859,169 - Bao , et al. January 2, 2 | 2018-01-02 |
Shared Metal Gate Stack With Tunable Work Function
App 20170358655 - Bao; Ruqiang ; et al. | 2017-12-14 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20170358579 - Ando; Takashi ; et al. | 2017-12-14 |
Protection Of High-k Dielectric During Reliability Anneal On Nanosheet Structures
App 20170323949 - Loubet; Nicolas J. ; et al. | 2017-11-09 |
Distinct Gate Stacks For Iii-v-based Cmos Circuits Comprising A Channel Cap
App 20170316979 - Ando; Takashi ; et al. | 2017-11-02 |
Distinct Gate Stacks For Iii-v-based Cmos Circuits Comprising A Channel Cap
App 20170309519 - Ando; Takashi ; et al. | 2017-10-26 |
Structures And Methods For Equivalent Oxide Thickness Scaling On Silicon Germanium Channel Or Iii-v Channel Of Semiconductor Device
App 20170309487 - Ando; Takashi ; et al. | 2017-10-26 |
Structures And Methods For Equivalent Oxide Thickness Scaling On Silicon Germanium Channel Or Iii-v Channel Of Semiconductor Device
App 20170309723 - Ando; Takashi ; et al. | 2017-10-26 |
Semiconductor device having a gate stack with tunable work function
Grant 9,799,656 - Bao , et al. October 24, 2 | 2017-10-24 |
Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor
Grant 9,793,397 - Ando , et al. October 17, 2 | 2017-10-17 |
Patterned Gate Dielectrics For Iii-v-based Cmos Circuits
App 20170271334 - Ando; Takashi ; et al. | 2017-09-21 |
Expitaxially Regrown Heterostructure Nanowire Lateral Tunnel Field Effect Transistor
App 20170263707 - Krishnan; Siddarth A. ; et al. | 2017-09-14 |
Trench Metal Insulator Metal Capacitor With Oxygen Gettering Layer
App 20170250073 - Ando; Takashi ; et al. | 2017-08-31 |
Semiconductor Devices With Varying Threshold Voltage And Fabrication Methods Thereof
App 20170250117 - KANNAN; Balaji ; et al. | 2017-08-31 |
Semiconductor devices with varying threshold voltage and fabrication methods thereof
Grant 9,748,145 - Kannan , et al. August 29, 2 | 2017-08-29 |
Patterned Gate Dielectrics For Iii-v-based Cmos Circuits
App 20170243867 - Ando; Takashi ; et al. | 2017-08-24 |
Distinct Gate Stacks For Iii-v-based Cmos Circuits Comprising A Channel Cap
App 20170243789 - Ando; Takashi ; et al. | 2017-08-24 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20170221898 - Ando; Takashi ; et al. | 2017-08-03 |
Semiconductor Device Having A Gate Stack With Tunable Work Function
App 20170207219 - Bao; Ruqiang ; et al. | 2017-07-20 |
Field Effect Transistor Gate Stack
App 20170207132 - Bao; Ruqiang ; et al. | 2017-07-20 |
Field Effect Transistor Stack With Tunable Work Function
App 20170207131 - Bao; Ruqiang ; et al. | 2017-07-20 |
Lowering parasitic capacitance of replacement metal gate processes
Grant 9,685,521 - Leobandung , et al. June 20, 2 | 2017-06-20 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor
Grant 9,660,027 - Krishnan , et al. May 23, 2 | 2017-05-23 |
Trench metal-insulator-metal capacitor with oxygen gettering layer
Grant 9,653,534 - Ando , et al. May 16, 2 | 2017-05-16 |
Advanced Mosfet Contact Structure To Reduce Metal-semiconductor Interface Resistance
App 20170133265 - Bu; Huiming ; et al. | 2017-05-11 |
Tailored silicon layers for transistor multi-gate control
Grant 9,646,887 - Narayanan , et al. May 9, 2 | 2017-05-09 |
Tailored silicon layers for transistor multi-gate control
Grant 9,646,886 - Narayanan , et al. May 9, 2 | 2017-05-09 |
Method to improve reliability of high-K metal gate stacks
Grant 9,634,116 - Ando , et al. April 25, 2 | 2017-04-25 |
Expitaxially Regrown Heterostructure Nanowire Lateral Tunnel Field Effect Transistor
App 20170110539 - Krishnan; Siddarth A. ; et al. | 2017-04-20 |
Replacement channel TFET
Grant 9,627,508 - Chudzik , et al. April 18, 2 | 2017-04-18 |
Activated Thin Silicon Layers
App 20170092725 - Ando; Takashi ; et al. | 2017-03-30 |
Activated Thin Silicon Layers
App 20170092501 - Ando; Takashi ; et al. | 2017-03-30 |
High-k Spacer For Extension-free Cmos Devices With High Mobility Channel Materials
App 20170092723 - Ando; Takashi ; et al. | 2017-03-30 |
High-K spacer for extension-free CMOS devices with high mobility channel materials
Grant 9,608,066 - Ando , et al. March 28, 2 | 2017-03-28 |
Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs
Grant 9,589,851 - Bu , et al. March 7, 2 | 2017-03-07 |
Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure
Grant 9,590,100 - Dubourdieu , et al. March 7, 2 | 2017-03-07 |
Gate stack with tunable work function
Grant 9,583,400 - Bao , et al. February 28, 2 | 2017-02-28 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20170053915 - Ando; Takashi ; et al. | 2017-02-23 |
Changing effective work function using ion implantation during dual work function metal gate integration
Grant 9,564,505 - Chudzik , et al. February 7, 2 | 2017-02-07 |
Semiconductor device having a gate stack with tunable work function
Grant 9,559,016 - Bao , et al. January 31, 2 | 2017-01-31 |
Dipole-Based Contact Structure to Reduce Metal-Semiconductor Contact Resistance in MOSFETs
App 20170018463 - Bu; Huiming ; et al. | 2017-01-19 |
Method and structure for III-V nanowire tunnel FETs
Grant 9,548,381 - Krishnan , et al. January 17, 2 | 2017-01-17 |
Method To Improve Reliability Of Replacement Gate Device
App 20170005179 - ANDO; TAKASHI ; et al. | 2017-01-05 |
Method To Improve Reliability Of Replacement Gate Device
App 20160380076 - Ando; Takashi ; et al. | 2016-12-29 |
Method to improve reliability of replacement gate device
Grant 9,484,438 - Ando , et al. November 1, 2 | 2016-11-01 |
Replacement Channel Tfet
App 20160308025 - Chudzik; Michael P. ; et al. | 2016-10-20 |
Method to improve reliability of replacement gate device
Grant 9,472,643 - Ando , et al. October 18, 2 | 2016-10-18 |
High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 9,472,553 - Ando , et al. October 18, 2 | 2016-10-18 |
Low threshold voltage CMOS device
Grant 9,455,203 - Ando , et al. September 27, 2 | 2016-09-27 |
Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance
Grant 9,449,887 - Ando , et al. September 20, 2 | 2016-09-20 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability
Grant 9,443,953 - Ando , et al. September 13, 2 | 2016-09-13 |
Multi-composition gate dielectric field effect transistors
Grant 9,397,175 - Alptekin , et al. July 19, 2 | 2016-07-19 |
Methods of forming multi-Vt III-V TFET devices
Grant 9,397,199 - Kwon , et al. July 19, 2 | 2016-07-19 |
Method to improve reliability of replacement gate device
Grant 9,391,164 - Ando , et al. July 12, 2 | 2016-07-12 |
Method To Improve Reliability Of High-k Metal Gate Stacks
App 20160181397 - Ando; Takashi ; et al. | 2016-06-23 |
Trench Metal-insulator-metal Capacitor With Oxygen Gettering Layer
App 20160181353 - Ando; Takashi ; et al. | 2016-06-23 |
Multiple thickness gate dielectrics for replacement gate field effect transistors
Grant 9,368,593 - Kwon , et al. June 14, 2 | 2016-06-14 |
Replacement Gate Pfet Materials Having Improved Nbti Performance
App 20160163814 - Ando; Takashi ; et al. | 2016-06-09 |
High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 9,362,282 - Ando , et al. June 7, 2 | 2016-06-07 |
Easy Deployment Of Machine Learning Models
App 20160148115 - Sirosh; Joseph ; et al. | 2016-05-26 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability
Grant 9,349,832 - Ando , et al. May 24, 2 | 2016-05-24 |
Semiconductor Devices Containing An Epitaxial Perovskite/doped Strontium Titanate Structure
App 20160133753 - Dubourdieu; Catherine A. ; et al. | 2016-05-12 |
Low Threshold Voltage Cmos Device
App 20160126145 - Ando; Takashi ; et al. | 2016-05-05 |
Lowering Parasitic Capacitance Of Replacement Metal Gate Processes
App 20160111512 - Leobandung; Effendi ; et al. | 2016-04-21 |
Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure
Grant 9,299,799 - Dubourdieu , et al. March 29, 2 | 2016-03-29 |
Method to improve reliability of high-K metal gate stacks
Grant 9,299,802 - Ando , et al. March 29, 2 | 2016-03-29 |
High-k/metal gate transistor with L-shaped gate encapsulation layer
Grant 9,263,276 - Mo , et al. February 16, 2 | 2016-02-16 |
Low threshold voltage CMOS device
Grant 9,263,344 - Ando , et al. February 16, 2 | 2016-02-16 |
Lowering parasitic capacitance of replacement metal gate processes
Grant 9,257,289 - Leobandung , et al. February 9, 2 | 2016-02-09 |
Multi-composition Gate Dielectric Field Effect Transistors
App 20160035841 - Alptekin; Emre ; et al. | 2016-02-04 |
High-k/metal gate transistor with L-shaped gate encapsulation layer
Grant 9,252,018 - Mo , et al. February 2, 2 | 2016-02-02 |
Inversion thickness reduction in high-k gate stacks formed by replacement gate processes
Grant 9,252,229 - Ando , et al. February 2, 2 | 2016-02-02 |
Multiple Thickness Gate Dielectrics For Replacement Gate Field Effect Transistors
App 20160027893 - Kwon; Unoh ; et al. | 2016-01-28 |
Interoperable Machine Learning Platform
App 20160012350 - Narayanan; Vijay ; et al. | 2016-01-14 |
Adaptive Featurization As A Service
App 20160012318 - Bilenko; Mikhail ; et al. | 2016-01-14 |
High-K/metal gate stack using capping layer methods, IC and related transistors
Grant 9,236,314 - Chudzik , et al. January 12, 2 | 2016-01-12 |
Multi-composition gate dielectric field effect transistors
Grant 9,231,072 - Alptekin , et al. January 5, 2 | 2016-01-05 |
Multiple thickness gate dielectrics for replacement gate field effect transistors
Grant 9,224,826 - Kwon , et al. December 29, 2 | 2015-12-29 |
Semiconductor Contact With Diffusion-controlled In Situ Insulator Formation
App 20150371952 - Breil; Nicolas L. ; et al. | 2015-12-24 |
Semiconductor Devices Containing An Epitaxial Perovskite/doped Strontium Titanate Structure
App 20150357429 - Dubourdieu; Catherine A. ; et al. | 2015-12-10 |
Oxygen scavenging spacer for a gate electrode
Grant 9,196,707 - Chudzik , et al. November 24, 2 | 2015-11-24 |
Annealing oxide gate dielectric layers for replacement metal gate field effect transistors
Grant 9,177,868 - Kwon , et al. November 3, 2 | 2015-11-03 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150311303 - Jagannathan; Hemanth ; et al. | 2015-10-29 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150311127 - Jagannathan; Hemanth ; et al. | 2015-10-29 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150279937 - Jagannathan; Hemanth ; et al. | 2015-10-01 |
Annealing Oxide Gate Dielectric Layers For Replacement Metal Gate Field Effect Transistors
App 20150279744 - Kwon; Unoh ; et al. | 2015-10-01 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150279746 - Jagannathan; Hemanth ; et al. | 2015-10-01 |
Semiconductor Contact With Diffusion-controlled In Situ Insulator Formation
App 20150270168 - Breil; Nicolas L. ; et al. | 2015-09-24 |
Lowering Parasitic Capacitance Of Replacement Metal Gate Processes
App 20150255294 - Leobandung; Effendi ; et al. | 2015-09-10 |
Enabling Enhanced Reliability And Mobility For Replacement Gate Planar And Finfet Structures
App 20150249015 - Ando; Takashi ; et al. | 2015-09-03 |
Method To Improve Reliability Of Replacement Gate Device
App 20150243762 - Ando; Takashi ; et al. | 2015-08-27 |
Low Threshold Voltage and Inversion Oxide Thickness Scaling for a High-K Metal Gate P-Type MOSFET
App 20150243662 - Ando; Takashi ; et al. | 2015-08-27 |
Method To Improve Reliability Of Replacement Gate Device
App 20150243761 - Ando; Takashi ; et al. | 2015-08-27 |
Method To Improve Reliability Of Replacement Gate Device
App 20150236135 - Ando; Takashi ; et al. | 2015-08-20 |
Enabling Enhanced Reliability And Mobility For Replacement Gate Planar And Finfet Structures
App 20150228749 - Ando; Takashi ; et al. | 2015-08-13 |
Multiple Thickness Gate Dielectrics For Replacement Gate Field Effect Transistors
App 20150228747 - Kwon; Unoh ; et al. | 2015-08-13 |
Multi-composition Gate Dielectric Field Effect Transistors
App 20150228748 - Alptekin; Emre ; et al. | 2015-08-13 |
Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFET
Grant 9,105,745 - Ando , et al. August 11, 2 | 2015-08-11 |
Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures
Grant 9,099,393 - Ando , et al. August 4, 2 | 2015-08-04 |
Engineering Multiple Threshold Voltages In An Integrated Circuit
App 20150214323 - Dubourdieu; Catherine Anne ; et al. | 2015-07-30 |
Oxygen scavenging spacer for a gate electrode
Grant 9,059,211 - Chudzik , et al. June 16, 2 | 2015-06-16 |
Structure and method to obtain EOT scaled dielectric stacks
Grant 9,059,314 - Jagannathan , et al. June 16, 2 | 2015-06-16 |
Low Threshold Voltage Cmos Device
App 20150147876 - Ando; Takashi ; et al. | 2015-05-28 |
Engineering multiple threshold voltages in an integrated circuit
Grant 9,041,082 - Dubourdieu , et al. May 26, 2 | 2015-05-26 |
Replacement metal gate structure for CMOS device
Grant 9,041,118 - Ando , et al. May 26, 2 | 2015-05-26 |
Method To Improve Reliability Of Replacement Gate Device
App 20150126020 - Ando; Takashi ; et al. | 2015-05-07 |
Method to improve reliability of replacement gate device
Grant 8,999,831 - Ando , et al. April 7, 2 | 2015-04-07 |
Replacement Metal Gate Structure For Cmos Device
App 20150054087 - Ando; Takashi ; et al. | 2015-02-26 |
Enabling Enhanced Reliability And Mobility For Replacement Gate Planar And Finfet Structures
App 20150035073 - Ando; Takashi ; et al. | 2015-02-05 |
Low threshold voltage CMOS device
Grant 8,941,184 - Ando , et al. January 27, 2 | 2015-01-27 |
Scaled equivalent oxide thickness for field effect transistor devices
Grant 8,940,599 - Ando , et al. January 27, 2 | 2015-01-27 |
Intrinsic Channel Planar Field Effect Transistors Having Multiple Threshold Voltages
App 20150021698 - Ando; Takashi ; et al. | 2015-01-22 |
FIN Field Effect Transistors Having Multiple Threshold Voltages
App 20150021699 - Ando; Takashi ; et al. | 2015-01-22 |
Replacement metal gate structure for CMOS device
Grant 8,895,434 - Ando , et al. November 25, 2 | 2014-11-25 |
Multiple Vt field-effect transistor devices
Grant 8,878,298 - Chang , et al. November 4, 2 | 2014-11-04 |
Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material
Grant 8,865,551 - Ando , et al. October 21, 2 | 2014-10-21 |
Reducing the inversion oxide thickness of a high-K stack fabricated on high mobility semiconductor material
Grant 8,853,751 - Ando , et al. October 7, 2 | 2014-10-07 |
Control of threshold voltages in high-k metal gate stack and structures for CMOS devices
Grant 8,835,260 - Jagannathan , et al. September 16, 2 | 2014-09-16 |
Field effect transistor device having a hybrid metal gate stack
Grant 8,836,048 - Cabral, Jr. , et al. September 16, 2 | 2014-09-16 |
Changing Effective Work Function Using Ion Implantation During Dual Work Function Metal Gate Integration
App 20140225199 - Chudzik; Michael P. ; et al. | 2014-08-14 |
Devices and methods to optimize materials and properties for replacement metal gate structures
Grant 8,796,784 - Ando , et al. August 5, 2 | 2014-08-05 |
Ferroelectric semiconductor transistor devices having gate modulated conductive layer
Grant 8,785,995 - Dubourdieu , et al. July 22, 2 | 2014-07-22 |
Gate-last fabrication of quarter-gap MGHK FET
Grant 8,786,030 - Ando , et al. July 22, 2 | 2014-07-22 |
Devices and methods to optimize materials and properties for replacement metal gate structures
Grant 8,785,322 - Ando , et al. July 22, 2 | 2014-07-22 |
Scaled Equivalent Oxide Thickness For Field Effect Transistor Devices
App 20140199828 - Ando; Takashi ; et al. | 2014-07-17 |
Changing effective work function using ion implantation during dual work function metal gate integration
Grant 8,753,936 - Chudzik , et al. June 17, 2 | 2014-06-17 |
Epitaxial source/drain contacts self-aligned to gates for deposited FET channels
Grant 8,754,403 - Chang , et al. June 17, 2 | 2014-06-17 |
Finfet Hybrid Full Metal Gate With Borderless Contacts
App 20140162447 - Edge; Lisa F. ; et al. | 2014-06-12 |
Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices
Grant 8,748,991 - Jagannathan , et al. June 10, 2 | 2014-06-10 |
Reliable physical unclonable function for device authentication
Grant 8,741,713 - Bruley , et al. June 3, 2 | 2014-06-03 |
FET device with stabilized threshold modifying material
Grant 8,735,243 - Copel , et al. May 27, 2 | 2014-05-27 |
Scavenging metal stack for a high-K gate dielectric
Grant 8,735,996 - Ando , et al. May 27, 2 | 2014-05-27 |
Method To Improve Reliability Of Replacement Gate Device
App 20140141598 - Ando; Takashi ; et al. | 2014-05-22 |
Replacement Metal Gate Structure For Cmos Device
App 20140131809 - Ando; Takashi ; et al. | 2014-05-15 |
Structures and techniques for atomic layer deposition
Grant 8,722,548 - Aoyama , et al. May 13, 2 | 2014-05-13 |
Scavenging metal stack for a high-K gate dielectric
Grant 8,716,088 - Ando , et al. May 6, 2 | 2014-05-06 |
Scaled equivalent oxide thickness for field effect transistor devices
Grant 8,716,813 - Ando , et al. May 6, 2 | 2014-05-06 |
Replacement gate structure for transistor with a high-K gate stack
Grant 8,716,118 - Ando , et al. May 6, 2 | 2014-05-06 |
Method to Improve Reliability of High-k Metal Gate Stacks
App 20140120707 - Ando; Takashi ; et al. | 2014-05-01 |
Replacement Gate With An Inner Dielectric Spacer
App 20140103404 - Li; Ying ; et al. | 2014-04-17 |
Field Effect Transistor Device Having A Hybrid Metal Gate Stack
App 20140106531 - Cabral, Jr.; Cyril ; et al. | 2014-04-17 |
Field Effect Transistor Device Having A Hybrid Metal Gate Stack
App 20140103457 - Cabral, JR.; Cyril ; et al. | 2014-04-17 |
Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices
Grant 8,680,629 - Jagannathan , et al. March 25, 2 | 2014-03-25 |
Techniques for enabling multiple V.sub.t devices using high-K metal gate stacks
Grant 8,680,623 - Frank , et al. March 25, 2 | 2014-03-25 |
Oxygen Scavenging Spacer For A Gate Electrode
App 20140065783 - Chudzik; Michael P. ; et al. | 2014-03-06 |
Method and apparatus for flatband voltage tuning of high-k field effect transistors
Grant 8,658,501 - Guha , et al. February 25, 2 | 2014-02-25 |
Reliable Physical Unclonable Function For Device Authentication
App 20140042442 - BRULEY; JOHN ; et al. | 2014-02-13 |
Integrated Circuit Device Including Low Resistivity Tungsten And Methods Of Fabrication
App 20140024208 - FRANK; MARTIN M. ; et al. | 2014-01-23 |
Integrated Circuit Device Including Low Resistivity Tungsten And Methods Of Fabrication
App 20140021470 - FRANK; MARTIN M. ; et al. | 2014-01-23 |
Scavenging Metal Stack For A High-k Gate Dielectric
App 20140004695 - Ando; Takashi ; et al. | 2014-01-02 |
Reducing The Inversion Oxide Thickness Of A High-k Stack Fabricated On High Mobility Semiconductor Material
App 20140001516 - ANDO; Takashi ; et al. | 2014-01-02 |
Scavenging Metal Stack For A High-k Gate Dielectric
App 20140001573 - Ando; Takashi ; et al. | 2014-01-02 |
Reducing The Inversion Oxide Thickness Of A High-k Stack Fabricated On High Mobility Semiconductor Material
App 20140004674 - ANDO; Takashi ; et al. | 2014-01-02 |
Gate-last fabrication of quarter-gap MGHK FET
Grant 8,592,296 - Ando , et al. November 26, 2 | 2013-11-26 |
Metal gate CMOS with at least a single gate metal and dual gate dielectrics
Grant 8,569,844 - Doris , et al. October 29, 2 | 2013-10-29 |
Self-limiting oxygen seal for high-K dielectric and design structure
Grant 8,564,074 - Hook , et al. October 22, 2 | 2013-10-22 |
Replacement Gate With Reduced Gate Leakage Current
App 20130260549 - Jagannathan; Hemanth ; et al. | 2013-10-03 |
Replacement Gate With Reduced Gate Leakage Current
App 20130256802 - Jagannathan; Hemanth ; et al. | 2013-10-03 |
Method of forming switching device having a molybdenum oxynitride metal gate
Grant 8,518,766 - Bojarczuk , et al. August 27, 2 | 2013-08-27 |
Epitaxial source/drain contacts self-aligned to gates for deposited FET channels
Grant 8,513,099 - Chang , et al. August 20, 2 | 2013-08-20 |
High-K metal gate CMOS
Grant 8,507,992 - Mo , et al. August 13, 2 | 2013-08-13 |
Replacement Gate Structure For Transistor With A High-k Gate Stack
App 20130175630 - ANDO; Takashi ; et al. | 2013-07-11 |
Low Threshold Voltage Cmos Device
App 20130154019 - Ando; Takashi ; et al. | 2013-06-20 |
Structure And Method For Reduction Of Vt-w Effect In High-k Metal Gate Devices
App 20130140670 - Aquilino; Michael V. ; et al. | 2013-06-06 |
Self-limiting Oxygen Seal For High-k Dielectric, Related Method And Design Structure
App 20130134545 - Hook; Terence B. ; et al. | 2013-05-30 |
Replacement gate devices with barrier metal for simultaneous processing
Grant 8,420,473 - Ando , et al. April 16, 2 | 2013-04-16 |
Field-effect transistor device having a metal gate stack with an oxygen barrier layer
Grant 8,415,677 - Adusumilli , et al. April 9, 2 | 2013-04-09 |
Oxygen Scavenging Spacer For A Gate Electrode
App 20130082337 - Chudzik; Michael P. ; et al. | 2013-04-04 |
Low Threshold Voltage And Inversion Oxide Thickness Scaling For A High-K Metal Gate P-Type MOSFET
App 20130032886 - Ando; Takashi ; et al. | 2013-02-07 |
Mosfet Gate Electrode Employing Arsenic-doped Silicon-germanium Alloy Layer
App 20130032897 - Narayanan; Vijay ; et al. | 2013-02-07 |
Low Threshold Voltage And Inversion Oxide thickness Scaling For A High-K Metal Gate P-Type MOSFET
App 20130034940 - ANDO; Takashi ; et al. | 2013-02-07 |
Replacement Metal Gate With A Conductive Metal Oxynitride Layer
App 20130009257 - Ando; Takashi ; et al. | 2013-01-10 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20130005156 - Jagannathan; Hemanth ; et al. | 2013-01-03 |
Large-grain, Low-resistivity Tungsten On A Conductive Compound
App 20120326314 - Brown; Stephen L. ; et al. | 2012-12-27 |
Inversion Thickness Reduction In High-k Gate Stacks Formed By Replacement Gate Processes
App 20120326245 - Ando; Takashi ; et al. | 2012-12-27 |
Devices And Methods To Optimize Materials And Properties For Replacement Metal Gate Structures
App 20120326216 - Ando; Takashi ; et al. | 2012-12-27 |
Gate-Last Fabrication of Quarter-Gap MGHK FET
App 20120299123 - Ando; Takashi ; et al. | 2012-11-29 |
High-k/metal Gate Transistor With L-shaped Gate Encapsulation Layer
App 20120299122 - MO; Renee T. ; et al. | 2012-11-29 |
Ferroelectric Semiconductor Transistor Devices Having Gate Modulated Conductive Layer
App 20120292677 - Dubourdieu; Catherine A. ; et al. | 2012-11-22 |
Epitaxial Source/drain Contacts Self-aligned To Gates For Deposited Fet Channels
App 20120292598 - Chang; Josephine B. ; et al. | 2012-11-22 |
Control Of Flatband Voltages And Threshold Voltages In High-k Metal Gate Stacks And Structures For Cmos Devices
App 20120286338 - Jagannathan; Hemanth ; et al. | 2012-11-15 |
Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices
App 20120286363 - Ando; Takashi ; et al. | 2012-11-15 |
Inversion Thickness Reduction In High-k Gate Stacks Formed By Replacement Gate Processes
App 20120280288 - Ando; Takashi ; et al. | 2012-11-08 |
Control Of Threshold Voltages In High-k Metal Gate Stack And Structures For Cmos Devices
App 20120276720 - Jagannathan; Hemanth ; et al. | 2012-11-01 |
Switching Device Having A Molybdenum Oxynitride Metal Gate
App 20120270385 - Bojarczuk; Nestor A. ; et al. | 2012-10-25 |
Large-grain, Low-resistivity Tungsten On A Conductive Compound
App 20120228773 - Brown; Stephen L. ; et al. | 2012-09-13 |
Devices And Methods To Optimize Materials And Properties For Replacement Metal Gate Structures
App 20120193729 - ANDO; TAKASHI ; et al. | 2012-08-02 |
Structure And Method For Reduction Of Vt-w Effect In High-k Metal Gate Devices
App 20120187522 - Aquilino; Michael V. ; et al. | 2012-07-26 |
Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks
App 20120181610 - Frank; Martin M. ; et al. | 2012-07-19 |
High-k/metal Gate Stack Using Capping Layer Methods, Ic And Related Transistors
App 20120184093 - Chudzik; Michael P. ; et al. | 2012-07-19 |
Multiple Vt Field-Effect Transistor Devices
App 20120175712 - Chang; Josephine B. ; et al. | 2012-07-12 |
Replacement Gate Devices With Barrier Metal For Simultaneous Processing
App 20120139053 - Ando; Takashi ; et al. | 2012-06-07 |
Structure And Method For Low Temperature Gate Stack For Advanced Substrates
App 20120139014 - Bedell; Stephen W. ; et al. | 2012-06-07 |
Engineering Multiple Threshold Voltages In An Integrated Circuit
App 20120086059 - Dubourdieu; Catherine Anne ; et al. | 2012-04-12 |
Structures And Techniques For Atomic Layer Deposition
App 20120074533 - Aoyama; Shintaro ; et al. | 2012-03-29 |
Gate-Last Fabrication of Quarter-Gap MGHK FET
App 20110309455 - Ando; Takashi ; et al. | 2011-12-22 |
Epitaxial Source/drain Contacts Self-aligned To Gates For Deposited Fet Channels
App 20110309332 - Chang; Josephine B. ; et al. | 2011-12-22 |
Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices
App 20110291198 - Ando; Takashi ; et al. | 2011-12-01 |
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