| Patent | Date |
|---|
Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology
Grant 11,216,595 - Boivie , et al. January 4, 2 | 2022-01-04 |
Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device
Grant 11,152,214 - Ando , et al. October 19, 2 | 2021-10-19 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 11,121,209 - Ando , et al. September 14, 2 | 2021-09-14 |
Method For Controlling The Forming Voltage In Resistive Random Access Memory Devices
App 20210234096 - Consiglio; Steven ; et al. | 2021-07-29 |
Encryption engine with an undetectable/tamper proof private key in late node CMOS technology
Grant 10,997,321 - Boivie , et al. May 4, 2 | 2021-05-04 |
Method for controlling the forming voltage in resistive random access memory devices
Grant 10,991,881 - Consiglio , et al. April 27, 2 | 2021-04-27 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 10,978,551 - Ando , et al. April 13, 2 | 2021-04-13 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
Grant 10,886,362 - Ando , et al. January 5, 2 | 2021-01-05 |
Method For Controlling The Forming Voltage In Resistive Random Access Memory Devices
App 20200381624 - Consiglio; Steven ; et al. | 2020-12-03 |
Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
Grant 10,833,150 - Frank , et al. November 10, 2 | 2020-11-10 |
Encryption Engine With An Undetectable/tamper-proof Private Key In Late Node Cmos Technology
App 20200019732 - Boivie; Richard H. ; et al. | 2020-01-16 |
Fast Recrystallization Of Hafnium Or Zirconium Based Oxides In Insulator-metal Structures
App 20200020762 - Frank; Martin M. ; et al. | 2020-01-16 |
Encryption Engine With An Undetectable/tamper-proof Private Key In Late Node Cmos Technology
App 20200019731 - Boivie; Richard H. ; et al. | 2020-01-16 |
CMOS Compatible Non-Filamentary Resistive Memory Stack
App 20190393413 - Ando; Takashi ; et al. | 2019-12-26 |
CMOS compatible non-filamentary resistive memory stack
Grant 10,505,112 - Ando , et al. Dec | 2019-12-10 |
Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology
Grant 10,423,805 - Boivie , et al. Sept | 2019-09-24 |
ReRAM DEVICE RESISTIVITY CONTROL BY OXIDIZED ELECTRODE
App 20190273205 - Ando; Takashi ; et al. | 2019-09-05 |
Method to improve reliability of replacement gate device
Grant 10,361,281 - Ando , et al. | 2019-07-23 |
Multi time programmable memories using local implantation in high-K/ metal gate technologies
Grant 10,361,093 - Ando , et al. | 2019-07-23 |
Stacked capacitor with symmetric leakage and break-down behaviors
Grant 10,332,957 - Ando , et al. | 2019-06-25 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
Grant 10,290,700 - Ando , et al. | 2019-05-14 |
Multi time programmable memories using local implantation in high-K/ metal gate technologies
Grant 10,211,064 - Ando , et al. Feb | 2019-02-19 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277621 - Ando; Takashi ; et al. | 2018-09-27 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277623 - Ando; Takashi ; et al. | 2018-09-27 |
Non-volatile memory device employing a deep trench capacitor
Grant 10,083,967 - Cartier , et al. September 25, 2 | 2018-09-25 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240862 - Ando; Takashi ; et al. | 2018-08-23 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240863 - Ando; Takashi ; et al. | 2018-08-23 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240861 - Ando; Takashi ; et al. | 2018-08-23 |
Three terminal fuse structure created by oxygen vacancy traps in hafnium-based oxides
Grant 10,043,584 - Cartier , et al. August 7, 2 | 2018-08-07 |
Method To Improve Reliability Of Replacement Gate Device
App 20180197972 - Ando; Takashi ; et al. | 2018-07-12 |
Encryption Engine With An Undetectable/tamper-proof Private Key In Late Node Cmos Technology
App 20180181774 - Boivie; Richard H. ; et al. | 2018-06-28 |
Method to improve reliability of replacement gate device
Grant 9,972,697 - Ando , et al. May 15, 2 | 2018-05-15 |
Three Terminal Fuse Structure Created By Oxygen Vacancy Traps In Hafnium-based Oxides
App 20180122491 - Cartier; Eduard A. ; et al. | 2018-05-03 |
Method to improve reliability of replacement gate device
Grant 9,960,252 - Ando , et al. May 1, 2 | 2018-05-01 |
Trench metal insulator metal capacitor with oxygen gettering layer
Grant 9,911,597 - Ando , et al. March 6, 2 | 2018-03-06 |
Stacked Capacitor With Symmetric Leakage And Break-down Behaviors
App 20180006108 - Ando; Takashi ; et al. | 2018-01-04 |
Non-volatile Memory Device Employing A Deep Trench Capacitor
App 20170358581 - Cartier; Eduard A. ; et al. | 2017-12-14 |
Multi Time Programmable Memories Using Local Implantation In High-k/ Metal Gate Technologies
App 20170358588 - Ando; Takashi ; et al. | 2017-12-14 |
Multi Time Programmable Memories Using Local Implantation In High-k/ Metal Gate Technologies
App 20170358587 - Ando; Takashi ; et al. | 2017-12-14 |
Structures And Methods For Equivalent Oxide Thickness Scaling On Silicon Germanium Channel Or Iii-v Channel Of Semiconductor Device
App 20170309487 - Ando; Takashi ; et al. | 2017-10-26 |
Structures And Methods For Equivalent Oxide Thickness Scaling On Silicon Germanium Channel Or Iii-v Channel Of Semiconductor Device
App 20170309723 - Ando; Takashi ; et al. | 2017-10-26 |
Non-volatile memory device employing a deep trench capacitor
Grant 9,754,945 - Cartier , et al. September 5, 2 | 2017-09-05 |
Trench Metal Insulator Metal Capacitor With Oxygen Gettering Layer
App 20170250073 - Ando; Takashi ; et al. | 2017-08-31 |
Trench metal-insulator-metal capacitor with oxygen gettering layer
Grant 9,653,534 - Ando , et al. May 16, 2 | 2017-05-16 |
Method to improve reliability of high-K metal gate stacks
Grant 9,634,116 - Ando , et al. April 25, 2 | 2017-04-25 |
Methods, apparatus and system for voltage ramp testing
Grant 9,599,656 - Uppal , et al. March 21, 2 | 2017-03-21 |
Method To Improve Reliability Of Replacement Gate Device
App 20170005179 - ANDO; TAKASHI ; et al. | 2017-01-05 |
Method To Improve Reliability Of Replacement Gate Device
App 20160380076 - Ando; Takashi ; et al. | 2016-12-29 |
Method to improve reliability of replacement gate device
Grant 9,484,438 - Ando , et al. November 1, 2 | 2016-11-01 |
Method to improve reliability of replacement gate device
Grant 9,472,643 - Ando , et al. October 18, 2 | 2016-10-18 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability
Grant 9,443,953 - Ando , et al. September 13, 2 | 2016-09-13 |
Method to improve reliability of replacement gate device
Grant 9,391,164 - Ando , et al. July 12, 2 | 2016-07-12 |
Trench Metal-insulator-metal Capacitor With Oxygen Gettering Layer
App 20160181353 - Ando; Takashi ; et al. | 2016-06-23 |
Method To Improve Reliability Of High-k Metal Gate Stacks
App 20160181397 - Ando; Takashi ; et al. | 2016-06-23 |
Methods, Apparatus And System For Voltage Ramp Testing
App 20160146879 - Uppal; Suresh ; et al. | 2016-05-26 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability
Grant 9,349,832 - Ando , et al. May 24, 2 | 2016-05-24 |
Method to improve reliability of high-K metal gate stacks
Grant 9,299,802 - Ando , et al. March 29, 2 | 2016-03-29 |
Method of restoring a flash memory in an integrated circuit chip package by addition of heat and an electric field
Grant 9,275,744 - Cartier , et al. March 1, 2 | 2016-03-01 |
Non-volatile Memory Device Employing A Deep Trench Capacitor
App 20160043088 - Cartier; Eduard A. ; et al. | 2016-02-11 |
FinFET structure and method to adjust threshold voltage in a FinFET structure
Grant 9,171,954 - Cartier , et al. October 27, 2 | 2015-10-27 |
Enabling Enhanced Reliability And Mobility For Replacement Gate Planar And Finfet Structures
App 20150249015 - Ando; Takashi ; et al. | 2015-09-03 |
Method To Improve Reliability Of Replacement Gate Device
App 20150243761 - Ando; Takashi ; et al. | 2015-08-27 |
Method To Improve Reliability Of Replacement Gate Device
App 20150243762 - Ando; Takashi ; et al. | 2015-08-27 |
Method To Improve Reliability Of Replacement Gate Device
App 20150236135 - Ando; Takashi ; et al. | 2015-08-20 |
Enabling Enhanced Reliability And Mobility For Replacement Gate Planar And Finfet Structures
App 20150228749 - Ando; Takashi ; et al. | 2015-08-13 |
Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures
Grant 9,099,393 - Ando , et al. August 4, 2 | 2015-08-04 |
Method To Improve Reliability Of Replacement Gate Device
App 20150126020 - Ando; Takashi ; et al. | 2015-05-07 |
Method to improve reliability of replacement gate device
Grant 8,999,831 - Ando , et al. April 7, 2 | 2015-04-07 |
Finfet Structure And Method To Adjust Threshold Voltage In A Finfet Structure
App 20150054093 - CARTIER; Eduard A. ; et al. | 2015-02-26 |
Enabling Enhanced Reliability And Mobility For Replacement Gate Planar And Finfet Structures
App 20150035073 - Ando; Takashi ; et al. | 2015-02-05 |
FinFET structure and method to adjust threshold voltage in a FinFET structure
Grant 8,932,949 - Cartier , et al. January 13, 2 | 2015-01-13 |
Finfet Structure And Method To Adjust Threshold Voltage In A Finfet Structure
App 20140217504 - CARTIER; Eduard A. ; et al. | 2014-08-07 |
Measuring Dielectric Breakdown In A Dynamic Mode
App 20140195175 - Cartier; Eduard A. ; et al. | 2014-07-10 |
FinFET structure and method to adjust threshold voltage in a FinFET structure
Grant 8,772,149 - Cartier , et al. July 8, 2 | 2014-07-08 |
Programmable FETs using Vt-shift effect and methods of manufacture
Grant 8,766,378 - Cartier , et al. July 1, 2 | 2014-07-01 |
Method To Improve Reliability Of Replacement Gate Device
App 20140141598 - Ando; Takashi ; et al. | 2014-05-22 |
Fabrication of devices having different interfacial oxide thickness via lateral oxidation
Grant 8,716,807 - Cai , et al. May 6, 2 | 2014-05-06 |
Replacement gate structure for transistor with a high-K gate stack
Grant 8,716,118 - Ando , et al. May 6, 2 | 2014-05-06 |
Method to Improve Reliability of High-k Metal Gate Stacks
App 20140120707 - Ando; Takashi ; et al. | 2014-05-01 |
PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE
App 20130187244 - CARTIER; Eduard A. ; et al. | 2013-07-25 |
Programmable FETs using Vt-shift effect and methods of manufacture
Grant 8,492,247 - Cartier , et al. July 23, 2 | 2013-07-23 |
Replacement Gate Structure For Transistor With A High-k Gate Stack
App 20130175630 - ANDO; Takashi ; et al. | 2013-07-11 |
Finfet Structure And Method To Adjust Threshold Voltage In A Finfet Structure
App 20130099313 - CARTIER; Eduard A. ; et al. | 2013-04-25 |
Fabrication Of Devices Having Different Interfacial Oxide Thickness Via Lateral Oxidation
App 20120306019 - Cai; Jin ; et al. | 2012-12-06 |
Fabrication of devices having different interfacial oxide thickness via lateral oxidation
Grant 8,304,306 - Cai , et al. November 6, 2 | 2012-11-06 |
Fabrication Of Devices Having Different Interfacial Oxide Thickness Via Lateral Oxidation
App 20120248537 - Cai; Jin ; et al. | 2012-10-04 |
FinFET with thin gate dielectric layer
Grant 8,242,560 - Cartier , et al. August 14, 2 | 2012-08-14 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics
Grant 8,193,051 - Bojarczuk, Jr. , et al. June 5, 2 | 2012-06-05 |
Method of forming metal/high-.kappa. gate stacks with high mobility
Grant 8,153,514 - Andreoni , et al. April 10, 2 | 2012-04-10 |
PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE
App 20120043622 - CARTIER; Eduard A. ; et al. | 2012-02-23 |
Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device
Grant 8,097,500 - Ando , et al. January 17, 2 | 2012-01-17 |
CMOS transistors with differential oxygen content high-K dielectrics
Grant 8,035,173 - Bu , et al. October 11, 2 | 2011-10-11 |
Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
Grant 7,999,323 - Cartier , et al. August 16, 2 | 2011-08-16 |
FinFET WITH THIN GATE DIELECTRIC LAYER
App 20110175163 - Cartier; Eduard A. ; et al. | 2011-07-21 |
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH-k DIELECTRICS
App 20110165767 - Bojarczuk, JR.; Nestor A. ; et al. | 2011-07-07 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics
Grant 7,928,514 - Bojarczuk, Jr. , et al. April 19, 2 | 2011-04-19 |
Dielectric spacer removal
Grant 7,919,379 - Cartier , et al. April 5, 2 | 2011-04-05 |
Method for etching chemically inert metal oxides
Grant 7,887,711 - Buchanan , et al. February 15, 2 | 2011-02-15 |
Extremely-thin silicon-on-insulator transistor with raised source/drain
Grant 7,871,869 - Cartier , et al. January 18, 2 | 2011-01-18 |
Low threshold voltage semiconductor device with dual threshold voltage control means
Grant 7,858,500 - Cartier , et al. December 28, 2 | 2010-12-28 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics
Grant 7,745,278 - Bojarczuk, Jr. , et al. June 29, 2 | 2010-06-29 |
Deep trench (DT) metal-insulator-metal (MIM) capacitor
Grant 7,741,188 - Dyer , et al. June 22, 2 | 2010-06-22 |
Cmos Transistors With Differential Oxygen Content High-k Dielectrics
App 20100148273 - Bu; Huiming ; et al. | 2010-06-17 |
CMOS transistors with differential oxygen content high-k dielectrics
Grant 7,696,036 - Bu , et al. April 13, 2 | 2010-04-13 |
Low threshold voltage semiconductor device with dual threshold voltage control means
Grant 7,655,994 - Cartier , et al. February 2, 2 | 2010-02-02 |
Extremely-thin silicon-on-insulator transistor with raised source/drain
Grant 7,652,332 - Cartier , et al. January 26, 2 | 2010-01-26 |
Extremely-thin Silicon-on-insulator Transistor With Raised Source/drain
App 20090311836 - CARTIER; EDUARD A. ; et al. | 2009-12-17 |
Using Metal/Metal Nitride Bilayers as Gate Electrodes in Self-Aligned Aggressively Scaled CMOS Devices
App 20090302399 - Cartier; Eduard A. ; et al. | 2009-12-10 |
Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
Grant 7,598,545 - Cartier , et al. October 6, 2 | 2009-10-06 |
Deep Trench (dt) Metal-insulator-metal (mim) Capacitor
App 20090236691 - Dyer; Thomas W. ; et al. | 2009-09-24 |
Method And Apparatus For Fabricating A High-performance Band-edge Complementary Metal-oxide-semiconductor Device
App 20090181505 - Ando; Takashi ; et al. | 2009-07-16 |
Method of forming gate stack for semiconductor electronic device
Grant 7,560,361 - Frank , et al. July 14, 2 | 2009-07-14 |
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH-k DIELECTRICS
App 20090152642 - Bojarczuk, JR.; Nestor A. ; et al. | 2009-06-18 |
Dielectric Spacer Removal
App 20090065817 - Cartier; Eduard A. ; et al. | 2009-03-12 |
Extremely-thin Silicon-on-insulator Transistor With Raised Source/drain
App 20090039426 - CARTIER; EDUARD A. ; et al. | 2009-02-12 |
Removal of charged defects from metal oxide-gate stacks
Grant 7,488,656 - Cartier , et al. February 10, 2 | 2009-02-10 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics
Grant 7,479,683 - Bojarczuk, Jr. , et al. January 20, 2 | 2009-01-20 |
Selective Implementation Of Barrier Layers To Achieve Treshold Voltage Control In Cmos Device Fabrication With High K Dielectrics
App 20090011610 - Bojarczuk, JR.; Nestor A. ; et al. | 2009-01-08 |
Cmos Transistors With Differential Oxygen Content High-k Dielectrics
App 20080308872 - Bu; Huiming ; et al. | 2008-12-18 |
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY
App 20080293259 - Andreoni; Wanda ; et al. | 2008-11-27 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
Grant 7,452,767 - Bojarczuk, Jr. , et al. November 18, 2 | 2008-11-18 |
Low Threshold Voltage Semiconductor Device With Dual Threshold Voltage Control Means
App 20080182389 - Cartier; Eduard A. ; et al. | 2008-07-31 |
Semiconductor device structures (gate stacks) with charge compositions
App 20080017936 - Buchanan; Douglas A. ; et al. | 2008-01-24 |
Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
Grant 7,242,055 - Bojarczuk, Jr. , et al. July 10, 2 | 2007-07-10 |
Low threshold voltage semiconductor device with dual threshold voltage control means
App 20070090471 - Cartier; Eduard A. ; et al. | 2007-04-26 |
Method of forming metal/high-k gate stacks with high mobility
App 20060289903 - Andreoni; Wanda ; et al. | 2006-12-28 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
App 20060275977 - Bojarczuk; Nestor A. JR. ; et al. | 2006-12-07 |
Removal of charged defects from metal oxide-gate stacks
App 20060246740 - Cartier; Eduard A. ; et al. | 2006-11-02 |
Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
App 20060237796 - Cartier; Eduard A. ; et al. | 2006-10-26 |
Method of forming metal/high-k gate stacks with high mobility
Grant 7,115,959 - Andreoni , et al. October 3, 2 | 2006-10-03 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
Grant 7,105,889 - Bojarczuk, Jr. , et al. September 12, 2 | 2006-09-12 |
Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
App 20060102968 - Bojarczuk; Nestor A. JR. ; et al. | 2006-05-18 |
Semiconductor-dielectric-semiconductor device structure fabricated by wafer bonding
App 20060035450 - Frank; Martin M. ; et al. | 2006-02-16 |
Method of forming metal/high-k gate stacks with high mobility
App 20050280105 - Andreoni, Wanda ; et al. | 2005-12-22 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics
App 20050269635 - Bojarczuk, Nestor A. JR. ; et al. | 2005-12-08 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
App 20050269634 - Bojarczuk, Nestor A. JR. ; et al. | 2005-12-08 |
Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides
App 20050258491 - Bojarczuk, Nestor A. JR. ; et al. | 2005-11-24 |
High-dielectric constant insulators for feol capacitors
Grant 6,958,506 - Gousev , et al. October 25, 2 | 2005-10-25 |
Dielectric stack without interfacial layer
Grant 6,861,728 - Bojarczuk, Jr. , et al. March 1, 2 | 2005-03-01 |
Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby
Grant 6,803,266 - Solomon , et al. October 12, 2 | 2004-10-12 |
Deuterium reservoirs and ingress paths
Grant 6,770,501 - Burnham , et al. August 3, 2 | 2004-08-03 |
High-dielectric constant insulators for feol capacitors
App 20040087100 - Gousev, Evgeni P. ; et al. | 2004-05-06 |
High-dielectric constant insulators for FEOL capacitors
Grant 6,667,207 - Ballantine , et al. December 23, 2 | 2003-12-23 |
Method for etching chemically inert metal oxides
App 20030230549 - Buchanan, Douglas A. ; et al. | 2003-12-18 |
Method for non-contact stress evaluation of wafer gate dielectric reliability
Grant 6,602,772 - Abadeer , et al. August 5, 2 | 2003-08-05 |
MOS device having a passivated semiconductor-dielectric interface
Grant 6,603,181 - Solomon , et al. August 5, 2 | 2003-08-05 |
Process For Passivating The Semiconductor-dielectric Interface Of A Mos Device And Mos Device Formed Thereby
App 20030132492 - Solomon , Paul M. ; et al. | 2003-07-17 |
Method for forming dielectric stack without interfacial layer
App 20030104666 - Bojarczuk, Nestor A. JR. ; et al. | 2003-06-05 |
Deuterium reservoirs and ingress paths
App 20030102529 - Burnham, Jay ; et al. | 2003-06-05 |
Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique
Grant 6,541,079 - Bojarczuk, Jr. , et al. April 1, 2 | 2003-04-01 |
Method for forming dielectric stack without interfacial layer
Grant 6,528,374 - Bojarczuk, Jr. , et al. March 4, 2 | 2003-03-04 |
Deuterium reservoirs and ingress paths
Grant 6,521,977 - Burnham , et al. February 18, 2 | 2003-02-18 |
High-dielectric constant insulators for FEOL capacitors
Grant 6,511,873 - Ballantine , et al. January 28, 2 | 2003-01-28 |
High-dielectric constant insulators for FEOL capacitors
App 20030017639 - Ballantine, Arne W. ; et al. | 2003-01-23 |
High-dielectric Constant Insulators For Feol Capacitors
App 20020192881 - Ballantine, Arne W. ; et al. | 2002-12-19 |
Method for forming dielectric stack without interfacial layer
App 20020145168 - Bojarczuk, Nestor A. JR. ; et al. | 2002-10-10 |
Interfacial oxidation process for high-k gate dielectric process integration
Grant 6,444,592 - Ballantine , et al. September 3, 2 | 2002-09-03 |
Mos Device Having A Passivated Semiconductor-dielectric Interface
App 20020094643 - Solomon, Paul M. ; et al. | 2002-07-18 |
Method for non-contact stress evaluation of wafer gate dielectric reliability
App 20020070675 - Abadeer, Wagdi W. ; et al. | 2002-06-13 |
| 