U.S. patent application number 16/570316 was filed with the patent office on 2021-03-18 for back end of line structures with metal lines with alternating patterning and metallization schemes.
The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Kangguo Cheng, Juntao Li, Chanro Park, Ruilong Xie, Chih-Chao Yang.
Application Number | 20210082714 16/570316 |
Document ID | / |
Family ID | 1000005430123 |
Filed Date | 2021-03-18 |
United States Patent
Application |
20210082714 |
Kind Code |
A1 |
Xie; Ruilong ; et
al. |
March 18, 2021 |
BACK END OF LINE STRUCTURES WITH METAL LINES WITH ALTERNATING
PATTERNING AND METALLIZATION SCHEMES
Abstract
Techniques are provided to fabricate semiconductor devices. For
example, a method includes forming an interconnect structure having
a base, a first conductive metal layer disposed on the base; and a
first hardmask layer disposed on the first conductive metal layer.
Metal lines are formed by subtractive etching. The metal lines have
negative tapered sidewalk, and an opening is formed between
adjacent metal lines. A first interlevel dielectric layer is
deposited in the openings. A portion of the first interlevel
dielectric layer is removed to form trench openings having positive
tapered sidewalls. A dielectric layer is deposited in one of the
openings. A liner layer and a second conducting metal layer are
deposited in the other trench openings. The liner layer and the
second conductive metal layer are recessed. A second hardmask layer
is deposited on a top surface of the liner layer and the second
conductive metal layer.
Inventors: |
Xie; Ruilong; (Niskayuna,
NY) ; Park; Chanro; (Clifton Park, NY) ; Yang;
Chih-Chao; (Glenmont, NY) ; Cheng; Kangguo;
(Schenectady, NY) ; Li; Juntao; (Cohoes,
NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Family ID: |
1000005430123 |
Appl. No.: |
16/570316 |
Filed: |
September 13, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/0332 20130101;
H01L 23/53209 20130101; H01L 21/76879 20130101; H01L 21/31144
20130101; H01L 21/76834 20130101 |
International
Class: |
H01L 21/311 20060101
H01L021/311; H01L 23/532 20060101 H01L023/532; H01L 21/768 20060101
H01L021/768; H01L 21/033 20060101 H01L021/033 |
Claims
1. A method comprising: forming an interconnect structure
comprising a base, a first conductive metal layer disposed on the
base, and a first hardmask layer disposed on the first conductive
metal layer; forming metal lines by patterning the first hardmask
layer and the first conductive metal layer above the base by
subtractive etching, wherein the metal lines have negative tapered
sidewalls, and further wherein an opening is formed between
adjacent metal lines; depositing a first interlevel dielectric
layer in the opening between the adjacent metal lines; removing a
portion of the first interlevel dielectric layer to form trench
openings having positive tapered sidewalls; depositing a dielectric
layer in a trench opening; depositing a liner layer on the exterior
surfaces of the other trench openings; depositing a second
conductive metal layer on the liner layer; recessing the liner
layer and the second conductive metal layer; and depositing a
second hardmask layer on a top surface of the liner layer and the
second conductive metal layer.
2. The method of claim 1, wherein the base is a front-end-of-line
structure, a middle-of-line structure or a back-end-of-line
structure.
3. The method of claim 1, wherein the first hardmask layer has a
different etch selectivity than the second hardmask layer.
4. The method of claim 1, wherein a conductive metal of the first
conductive metal layer is the same conductive metal as the second
conductive metal layer.
5. The method of claim 4, wherein the conductive metal is
ruthenium.
6. The method of claim 1, wherein a conductive metal of the first
conductive metal layer is a different conductive metal than the
second conductive metal layer.
7. The method of claim 1, wherein the first conductive metal layer
and the second conductive metal layer comprises one of aluminum,
chromium, hafnium, iridium, molybdenum, niobium, osmium, rhenium,
rhodium, ruthenium, tantalum, titanium, tungsten, vanadium,
zirconium, and alloys thereof.
8. The method of claim 7, wherein the dielectric layer comprises a
metal oxide.
9. The method of claim 1, further comprising: depositing a second
interlevel dielectric layer on a top surface of the interconnect
structure; selectively etching the second interlevel dielectric
layer to form a trench exposing a top surface of the second
interlevel dielectric layer; patterning and selectively etching the
second interlevel dielectric layer and the second hardmask layer
relative to the first hardmask layer and the first interlevel
dielectric layer to form a via exposing a top surface of the liner
layer and the second conductive metal layer; and depositing a third
conductive metal layer in the via and the trench.
10. The method of claim 9, wherein a conductive metal of the third
conductive metal layer is the same conductive metal as the second
conductive metal layer.
11. The method of claim 1, further comprising: depositing a second
interlevel dielectric layer on a top surface of the interconnect
structure; selectively etching the second interlevel dielectric
layer to form a trench exposing a top surface of the second
interlevel dielectric layer; patterning and selectively etching the
second interlevel dielectric layer and the first hardmask layer
relative to the second hardmask layer and the first interlevel
dielectric layer to form a via exposing a top surface of the second
conductive metal layer; and depositing a third conductive metal
layer in the via and the trench.
12. The method of claim 11, wherein a conductive metal of the third
conductive metal layer is the same conductive metal as the second
conductive metal layer.
13.-20. (canceled)
21. The method of claim 1, wherein the liner layer is a TiN
layer.
22. The method of claim 1, wherein the liner layer has a thickness
ranging from about 0.5 to about 3 nm.
23. The method of claim 1, wherein the first hardmask layer is one
or more of SiO.sub.2, SiN, SiOCN, SiBCN, SiOC and SiC.
24. The method of claim 1, wherein the second hardmask layer is a
different material than the first hardmask layer.
25. The method of claim 9, wherein the first hardmask layer has a
different etch selectivity than the second hardmask layer.
26. The method of claim 11, wherein the first hardmask layer has a
different etch selectivity than the second hardmask layer.
27. The method of claim 9, further comprising depositing a metal
liner in the via and the trench prior to depositing the third
conductive metal layer.
28. The method of claim 11, further comprising depositing a metal
liner in the via and the trench prior to depositing the third
conductive metal layer.
Description
BACKGROUND
[0001] With the current trends in integrated circuit (IC)
miniaturization, and increasingly smaller critical dimensions, it
is desirable in semiconductor device technology to integrate many
different functions on a single chip. In the IC chip fabrication
industry, there are three sections referred to in a typical IC chip
build: front-end-of-line (FEOL), back-end-of-line (BEOL), and the
section that connects those two together, the middle-of-line (MOL).
The FEOL is made up of the semiconductor devices, e.g.,
transistors, the BEOL is made up of interconnects and wiring, and
the MOL is an interconnect between the FEOL and BEOL that includes
material to prevent the diffusion of BEOL metals to FEOL
devices.
[0002] The FEOL transistor devices are typically processed using
single crystal and poly-crystalline silicon. The BEOL interconnects
are typically made of multiple metals; the bulk of the conductor is
copper. If copper diffuses into the FEOL silicon-based devices, it
can cause shorting or alter sensitive transistor characteristics
and render the semiconductor useless. This is the reason for the
MOL connection. BEOL generally begins when the first layer of metal
is deposited on the wafer. BEOL includes contacts, insulating
layers (dielectrics), metal levels, and bonding sites for
chip-to-package connections.
[0003] Generally, ICs include a complex network of conductive
interconnects fabricated on a semiconductor substrate in which
semiconductor devices have been formed. Efficient routing of these
interconnects requires formation of multilevel or multilayered
schemes, such as, for example, single or dual damascene wiring
structures.
[0004] The BEOL is the second portion of IC fabrication where the
individual devices (transistors, capacitors, resistors, etc.) get
interconnected with wiring on the wafer, i.e., the metallization
layer. Common metals are copper interconnects and aluminum
interconnects. BEOL generally begins when the first layer of metal
is deposited on the wafer. BEOL includes contacts, insulating
layers (dielectrics), metal levels, and bonding sites for
chip-to-package connections.
SUMMARY
[0005] Embodiments described herein provide methods of forming
interconnect structures.
[0006] For example, one exemplary embodiment includes a method for
forming an interconnect structure. The method comprises forming an
interconnect structure comprising a base, a first conductive metal
layer disposed on the base, and a first hardmask layer disposed on
the first conductive metal layer. The method further comprises
forming metal lines by patterning the first hardmask layer and the
first conductive metal layer above the base by subtractive etching.
The metal lines have negative tapered sidewalls and an opening is
formed between adjacent metal lines. The method further comprises
depositing a first interlevel dielectric layer in the openings
between the adjacent metal lines. The method further comprises
removing a portion of the first interlevel dielectric layer to form
trench openings having positive tapered sidewalls. The method
further comprises depositing a dielectric layer in a trench
opening. The method further comprises depositing a liner layer on
the exterior surfaces of the other trench openings. The method
further comprises depositing a second conducting metal layer on the
liner layer. The method further comprises recessing the liner layer
and the second conductive metal layer. The method further comprises
depositing a second hardmask layer on a top surface of the liner
layer and the second conductive metal layer.
[0007] Another exemplary embodiment includes an interconnect
structure comprising a plurality of metal lines, wherein respective
ones of the metal lines have an alternating positive tapered shape
or a negative tapered shape. A first interlevel dielectric layer is
disposed between adjacent metal lines. A first hardmask layer is
disposed on a top surface of the metal lines having a negative
tapered shape. A second hardmask layer is disposed on a top surface
of the metal lines having a positive tapered shape. The metal lines
having a positive tapered shape comprise a sidewall metal liner
layer.
[0008] These and other features, objects and advantages of the
present invention will become apparent from the following detailed
description of illustrative embodiments thereof, which is to be
read in connection with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIG. 1 is a cross sectional view of a semiconductor
structure at a first-intermediate fabrication stage, according to
an illustrative embodiment.
[0010] FIG. 2A is a top view of a semiconductor structure showing
the X1 axis and the X2 axis, at a second-intermediate fabrication
stage, according to an illustrative embodiment.
[0011] FIG. 2B is a cross sectional view of the semiconductor
structure taken along the X1 axis of FIG. 2A at the
second-intermediate fabrication stage, according to an illustrative
embodiment.
[0012] FIG. 2C is a cross sectional view of the semiconductor
structure taken along the X2 axis of FIG. 2A at the
second-intermediate fabrication stage, according to an illustrative
embodiment.
[0013] FIG. 3A is a cross sectional view of the semiconductor
structure taken along the X1 axis of FIG. 2A at a
third-intermediate fabrication stage, according to an illustrative
embodiment.
[0014] FIG. 3B is a cross sectional view of the semiconductor
structure taken along the X2 axis of FIG. 2A at the
third-intermediate fabrication stage, according to an illustrative
embodiment.
[0015] FIG. 4A is a cross sectional view of the semiconductor
structure taken along the X1 axis of FIG. 2A at a
fourth-intermediate fabrication stage, according to an illustrative
embodiment.
[0016] FIG. 4B is a cross sectional view of the semiconductor
structure taken along the X2 axis of FIG. 2A at the
fourth-intermediate fabrication stage, according to an illustrative
embodiment.
[0017] FIG. 5A is a cross sectional view of the semiconductor
structure taken along the X1 axis of FIG. 2A at a
fifth-intermediate fabrication stage, according to an illustrative
embodiment.
[0018] FIG. 5B is a cross sectional view of the semiconductor
structure taken along the X2 axis of FIG. 2A at the
fifth-intermediate fabrication stage, according to an illustrative
embodiment.
[0019] FIG. 6A is a cross sectional view of the semiconductor
structure taken along the X1 axis of FIG. 2A at a
sixth-intermediate fabrication stage, according to an illustrative
embodiment.
[0020] FIG. 6B is a cross sectional view of the semiconductor
structure taken along the X2 axis of FIG. 2A at the
sixth-intermediate fabrication stage, according to an illustrative
embodiment.
[0021] FIG. 7A is a cross sectional view of the semiconductor
structure taken along the X1 axis of FIG. 2A at a
seventh-intermediate fabrication stage, according to an
illustrative embodiment.
[0022] FIG. 7B is a cross sectional view of the semiconductor
structure taken along the X2 axis of FIG, 2A at the
seventh-intermediate fabrication stage, according to an
illustrative embodiment.
[0023] FIG. 8A is a cross sectional view of the semiconductor
structure taken along the X1 axis of FIG. 2A at an
eighth-intermediate fabrication stage, according to an illustrative
embodiment.
[0024] FIG. 8B is a cross sectional view of the semiconductor
structure taken along the X2 axis of FIG. 2A at the
eighth-intermediate fabrication stage, according to an illustrative
embodiment.
DETAILED DESCRIPTION
[0025] Embodiments of the present invention generally relate to a
method of forming interconnects having alternating cap layers on a
BEOL structure of an integrated circuit. With the IC being reduced
in size over the years, the interconnect structure has also been
reduced accordingly. Thus, in recent technology generations,
numerous design constraints and rules have been developed that
bound the patterns of cells in an IC. The rules and constraints
take into consideration margins of error in locating the cells in
the substrate, ways to reduce the magnitude of leakage, as well as
other considerations to assure the performance of the resulting
integrated circuit. For example, rules delineate minimum distances
between structures of cells, lines, vias, and the like. Metal
direction relative to the gate material, metal layer chosen for
power distribution within the cell, cell height, metal pitch, etc.,
are all constraints of a chosen pattern or physical layout of the
cells.
[0026] As stated above, one constraint is the metal pitch. Metal
pitch determines the accessibility of cells so metal pitch directly
impacts the cell density of the integrated circuit. Further, the
length of interconnections between cells impacts the performance.
For instance, longer lines have increased resistance, increasing
heat dissipation in the integrated circuit, Longer lines also
increase the capacitance of the overall design. Thus, while the
first metallization layer is typically set to the tightest wire
pitch, all remaining metallization layers of common thickness are
constrained to a constant minimum metal pitch that facilitates
interconnection of the cells. Current integrated circuits typically
have six to eight metallization layers.
[0027] When interconnects further scale down to a metal pitch of
less than 25 nanometers nm), there are challenges that exist.
Presently there are several approaches to these challenges. One
approach is a damascene based metallization technique. However,
this approach has dielectric pillar stability issues, and cannot
form alternative metal capping layer for fully aligned vias. A
second approach is a subtractive metal etch. This approach also has
issues with metal pillar etching at sub 25 nm pitch as well as
metal pillar stability issues.
[0028] Accordingly, embodiments of the present invention provide a
solution to interconnect technology for metal pitch of, for
example, less than 25 nm. The methods disclosed herein can obtain a
tight metal pitch patterning without pattern collapse, tight metal
formation with alternative capping material for fully aligned vias
and a tight metal pitch cut without misalignment.
[0029] It is to be understood that the various layers, structures,
and regions shown in the accompanying drawings are schematic
illustrations that are not drawn to scale. In addition, for ease of
explanation, one or more layers, structures, and regions of a type
commonly used to form semiconductor devices or structures may not
be explicitly shown in a given drawing. This does not imply that
any layers, structures, and regions not explicitly shown are
omitted from the actual semiconductor structures.
[0030] Furthermore, it is to be understood that the embodiments
discussed herein are not limited to the particular materials,
features, and processing steps shown and described herein. In
particular, with respect to semiconductor processing steps, it is
to be emphasized that the descriptions provided herein are not
intended to encompass all of the processing steps that may be
required to form a functional semiconductor integrated circuit
device. Rather, certain processing steps that are commonly used in
forming semiconductor devices, such as, for example, wet cleaning
and annealing steps, are purposefully not described herein for
economy of description.
[0031] Moreover, the same or similar reference numbers are used
throughout the drawings to denote the same or similar features,
elements, or structures, and thus, a detailed explanation of the
same or similar features, elements, or structures will not be
repeated for each of the drawings. It is to be understood that the
terms "about" or "substantially" as used herein with regard to
thicknesses, widths, percentages, ranges, etc., are meant to denote
being close or approximate to, but not exactly. For example, the
term "about" or "substantially" as used herein implies that a small
margin of error may be present, such as 1% or less than the stated
amount.
[0032] Reference in the specification to "one embodiment" or "an
embodiment" of the present principles, as well as other variations
thereof, means that a particular feature, structure,
characteristic, and so forth described in connection with the
embodiment is included in at least one embodiment of the present
principles. Thus, the appearances of the phrase "in one embodiment"
or "in an embodiment", as well any other variations, appearing in
various places throughout the specification are not necessarily all
referring to the same embodiment. The term "positioned on" means
that a first element, such as a first structure, is present on a
second element, such as a second structure, wherein intervening
elements, such as an interface structure, e.g. interface layer, may
be present between the first element and the second element. The
term "direct contact" means that a first element, such as a first
structure, and a second element, such as a second structure, are
connected without any intermediary conducting, insulating or
semiconductor layers at the interface of the two elements.
[0033] It will be understood that, although the terms first,
second, etc. may be used herein to describe various elements, these
elements should not be limited by these terms. These terms are only
used to distinguish one element from another element. Thus, a first
element discussed below could be termed a second element without
departing from the scope of the present concept.
[0034] As used herein, "height" refers to a vertical size of an
element (e.g., a layer, trench, hole, opening, etc.) in the
cross-sectional views measured from a bottom surface to a top
surface of the element, and/or measured with respect to a surface
on which the element is located. Conversely, a "depth" refers to a
vertical size of an element (e.g., a layer, trench, hole, opening,
etc.) in the cross-sectional views measured from a top surface to a
bottom surface of the element. Terms such as "thick", "thickness",
"thin" or derivatives thereof may be used in place of "height"
where indicated.
[0035] As used herein, "width" or "length" refers to a size of an
element (e.g., a layer, trench, hole, opening, etc.) in the
drawings measured from a side surface to an opposite surface of the
element. Terms such as "thick", "thickness", "thin" or derivatives
thereof may be used in place of "width" or "length" where
indicated.
[0036] The present embodiments may include a design for an
integrated circuit chip, which may be created in a graphical
computer programming language, and stored in a computer storage
medium (such as a disk, tape, physical hard drive, or virtual hard
drive such as in a storage access network). If the designer does
not fabricate chips or the photolithographic masks used to
fabricate chips, the designer may transmit the resulting design by
physical means (e.g., by providing a copy of the storage medium
storing the design) or electronically (e.g., through the Internet)
to such entities, directly or indirectly. The stored design is then
converted into the appropriate format (e.g., GUSH) for the
fabrication of photolithographic masks, which typically include
multiple copies of the chip design in question that are to be
formed on a wafer. The photolithographic masks are utilized to
define areas of the wafer (and/or the layers thereon) to be etched
or otherwise processed.
[0037] Illustrative embodiments for forming a semiconductor device
will be described below with reference to FIGS. 1-8B. Note that the
same reference numeral (100) is used to denote the semiconductor
structure throughout the various intermediate fabrication stages
illustrated in FIGS. 1 through 8B. Note also that the semiconductor
structure described herein can also be considered a semiconductor
device and/or an integrated circuit, or some part thereof. For the
purpose of clarity, some fabrication steps leading up to the
production of the semiconductor structure as illustrated in FIGS.
1-8B are omitted. In other words, one or more well-known processing
steps which are not illustrated but are well-known to those of
ordinary skill in the art have not been included in the
figures.
[0038] FIG. 1 shows a semiconductor structure 100 at a starting
point according to an illustrative embodiment of the present
invention. Semiconductor structure 100 comprises a base 102. In
general, base 102 comprises a semiconductor substrate. The
semiconductor substrate comprises a silicon substrate, such as a
silicon wafer. In one illustrative embodiment, disposed on the
semiconductor substrate is a BEOL stack. The BEOL stack comprises a
plurality of metallization layers, dielectric layers and via
layers, As one skilled in the art would understand, base 102. can
be, for example, BEOL interconnects with BEOL interlevel dielectric
(ILD) fill; a MOL contact with MOL ILD fill and FEOL devices.
[0039] A conductive metal layer 104 is deposited on base 102 using
a suitable deposition process, for example, atomic layer deposition
(ALD), chemical vapor deposition (CVD), plasma enhanced chemical
vapor deposition (PECVD), physical vapor deposition (PVD), chemical
solution deposition or other like processes. Suitable conductive
metals for layer 104, i.e., metallization Mx-1 level (see FIGS. 8A
and 8B), are any conductive material that can be dry etched or
patterned including, for example, aluminum (Al), chromium (Cr),
hafnium (Hf), iridium (Ir), molybdenum (Mo), niobium (Nb), osmium
(Os), rhenium (Re), rhodium (Rh), ruthenium (Ru), tantalum (Ta),
titanium (Ti), tungsten (W), vanadium (V), zirconium (Zr), and
alloys thereof. In one embodiment, conductive metal layer 104 is
formed by one or more of Al, Ru, Ta, Ti or W. In one embodiment,
conductive metal layer 104 is Ru. If desired a liner layer (not
shown) can be deposited first before deposition of the conductive
metal layer. The liner layer can be, for example, a TiN layer. In
general, liner layer can have a thickness ranging from about 0.5 to
about 3 nm.
[0040] Next, a hardmask layer 106 is then deposited on conductive
metal layer 104 using a suitable deposition process, for example,
ALD, CVD, PECVD, PVD, chemical solution deposition or other like
processes. Suitable material for hardmask layer 106 includes, for
example, SiO.sub.2, SiN, SiOCN, SiBCN, SiOC, SiC, etc., or
combination of those layers.
[0041] FIG. 2A illustrates a top view of semiconductor structure
100 showing the X1 axis and the X2 axis. FIG. 2B is a cross
sectional view of a semiconductor structure taken along the X1 axis
of FIG. 2A, and FIG. 2C is a cross sectional view of a
semiconductor structure taken along the X2 axis of FIG. 2A, at a
second-intermediate fabrication stage, Referring to FIG. 2B,
hardmask layer 106 is patterned using a subtractive metal etch to
etch only those portions of conductive metal layer 104 that will
become metal lines. Accordingly, a subtractive patterning process
is performed using lithography and a metal etch process to form
metal lines comprising the conductive metal layer 104 and the
hardmask layer 106 on top of base 102 at a desired. location along
with trench opening 108a. The unwanted metals are removed, e.g., by
RIE. As shown in FIG. 2C, trench openings 108b and 108c are formed
in the conductive metal layer 104 and the hardmask layer 106 having
a metal pitch L1. In one embodiment, the metal pitch L1 can range
from about 40 to about 100 nm. Further, as can be seen, the
conductive metal layer 104, i.e., metal line, in each of FIGS. 2B
and 2C will have negative tapered sidewalk, i.e., a top of the
metal line is narrower in width than a bottom of the metal line as
viewed in the cross section.
[0042] FIG. 3A is a cross sectional view of the semiconductor
structure 100 taken along the X1 axis of FIG. 2A, and FIG. 3B is a
cross sectional view of the semiconductor structure 100 taken along
the X2 axis of FIG. 2A, at a third-intermediate fabrication stage.
Referring to FIGS. 3A and 3B, an interlevel dielectric (ILD) layer
110 deposited in trench openings 108a, 108b and 108c and on the top
surface base 102. The ILD layer 110 includes, for example, any
suitable dielectric material such as silicon oxide, silicon
nitride, hydrogenated silicon carbon oxide, low-k dielectrics,
ultralow-k dielectrics, flowable oxides, porous dielectrics, or
organic dielectrics including porous organic dielectrics. Low-k
dielectric materials have a nominal dielectric constant less than
the dielectric constant of SiO.sub.2, which is approximately 4
(e.g., the dielectric constant for thermally grown silicon dioxide
can range from 3.9 to 4.0). In one embodiment, low-k dielectric
materials may have a dielectric constant of less than 3.7. Suitable
low-k dielectric materials include, for example, fluorinated
silicon glass (FSG), carbon doped oxide, a polymer, a
SiCOH-containing low-k material, a non-porous low-k material, a
porous low-k material, a spin-on dielectric (SOD) low-k material,
or any other suitable low-k dielectric material. Ultra low-k
dielectric materials have a nominal dielectric constant less than
2.5. Suitable ultra low-k dielectric materials include, for
example, SiOCH, porous pSiCOH, pSiCNO, carbon rich silicon carbon
nitride (C-Rich SiCN), porous silicon carbon nitride (pSiCN), boron
and phosporous doped. SiCOH/pSiCOH and the like.
[0043] The ILD layer 110 may be formed using any suitable
deposition techniques including CVD, AT D, PVD, PECVD, chemical
solution deposition or other like processes. ILD layer 110 is
conformally deposited such that it will pinch-off the metal
tip-to-tip region, i.e., FIG. 3A shows the ILD layer 110 pinching
off the center region between the trench openings 111a and 111b as
discussed below.
[0044] Next, ILD layer 110 is subjected to an etching process such
as an anisotropic reactive ion etching (RIE) to form trench
openings 111a and 111b in FIG. 3A and trench openings 111c and 111d
in FIG. 3B. As can be seen, the trench openings 111a, 111b, 111c
and 111d will have positive tapered sidewalks, i.e., the top of
trench openings 111a, 111b, 111c and 111d is wider in width than
the bottom of trench openings 111a, 111b, 111c and 111d as viewed
in the cross section.
[0045] FIG. 4A is a cross sectional view of the semiconductor
structure 100 taken along the X1 axis of FIG. 2A, and FIG. 4B is a
cross sectional view of the semiconductor structure 100 taken along
the X2 axis of FIG. 2A, at a fourth-intermediate fabrication stage.
Referring to FIGS. 4A and 4B, an optical planarization layer (OPL)
112 is deposited in trench openings 111a, 111b, 111c and 111d and
over the top surface of hardmask layer 106 using traditional
techniques for forming such materials, e.g., spin-coating,
deposition, etc. OPL layer 112 can then be planarized by, for
example, a planarization process such as CMP. Next, OPL layer 112
is patterned to selectively remove OPL 112 from trench opening 111d
using lithography and etching processes which etch OPL 112
selective to surrounding materials, such as hardmask 106 and ILD
110.
[0046] FIG. 5A is a cross sectional view of the semiconductor
structure 100 taken along the X1 axis of FIG. 2A, and FIG. 5B is a
cross sectional view of the semiconductor structure 100 taken along
the X2 axis of FIG. 2A, at a fifth-intermediate fabrication stage.
During this stage, a dielectric material 114 is deposited into
trench opening 111d as shown in FIG. 5B. Dielectric material 114
can be, for example, Hafnium Oxide (HfOx), Aluminum Oxide (AlOx),
SiN, SiOC, SiC, or any suitable dielectric. Dielectric material 114
may be deposited by using conventional techniques such as CND, PVD,
or ALD as is well known in the art.
[0047] Next, OPL 112 is then selectively removed from the
semiconductor structure 100 using various etching processes such
as, for example, a plasma ash etching process, as shown in FIGS. 5A
and 5B. The plasma ash etching process is selective to OPL 112 and
not hardmask layer 106, ILD 110 and dielectric layer 114.
Alternatively, a dry etching process, for example, RIF may be
used.
[0048] FIG. 6A is a cross sectional view of the semiconductor
structure 100 taken along the X1 axis of FIG. 2A, and FIG. 6B is a
cross sectional view of the semiconductor structure 100 taken along
the X2 axis of FIG, 2A, at a sixth-intermediate fabrication stage.
During this stage, liner layer 116 is deposited on the bottom
surfaces and sidewalls of each of the trench openings using a
conventional deposition process, for example, CVD, PECVD, PVD,
plating, thermal or e-beam evaporation, sputtering, etc. In one
embodiment, liner layer 116 is a metal liner. Suitable material for
liner layer 116 includes, for example, TiN, TaN, etc. In general,
liner layer 116 can have a thickness ranging from about 0.3 nm to
about 3 nm.
[0049] Next, a conductive metal layer 118 is deposited on liner
layer 116 using a suitable deposition process, for example, ALD,
CVD, PECVD, PVD, chemical solution deposition or other like
processes. Suitable conductive metals for layer 118 are any
conductive material that can be dry etched or patterned including,
for example, Al, Cr, Hf, Ir, Mo, Nb, Os, Re, Rh, Ru, Ta, Ti, W, V.
Zr, and alloys thereof. In one embodiment, conductive metal layer
118 is formed by one or more of Al, Ru, Ta, Ti or W. In one
embodiment, conductive metal layer 118 is Ru. The liner layer 116
and conductive metal layer 118 are then recessed to below a top
surface of the trench openings.
[0050] FIG. 7A is a cross sectional view of the semiconductor
structure 100 taken along the X1 axis of FIG. 2A, and FIG. 7B is a
cross sectional view of the semiconductor structure 100 taken along
the X2 axis of FIG. 2A, at a seventh-intermediate fabrication
stage. During this stage, a hardmask layer 120 is deposited on the
top surface of liner layer 116 and conductive metal layer 118 and
fills the trench openings. The material for hardmask layer 120 is
different than the material for hardmask layer 106. In one
illustrative embodiment, the material for hardmask layer 120 has a
different etch rate or etch characteristics during RIE than the
material for hardmask layer 106. For example, when the material for
one hardmask is SiN, the other material may be SiOC. In another
illustrative embodiment, when the material for one hardmask is
SiO.sub.2, the other material may be SiN. In another illustrative
embodiment, when the material for one hardmask is SiC, the other
material may be SiN. In another illustrative embodiment, when the
material for one hardmask is SiBCN, the other material may be
SiOCN. As shown in FIG. 7B, the semiconductor structure 100 will
have a metal pitch L2. In one embodiment, metal pitch L2 will be
less than 25 nm, e.g., a metal pitch ranging from about 20 to about
50 nm.
[0051] FIG. 8A is a cross sectional view of the semiconductor
structure 100 taken along the X1 axis of FIG. 2A, and FIG. 8B is a
cross sectional view of the semiconductor structure 100 taken along
the X2 axis of FIG. 2A, at an eighth-intermediate fabrication
stage. Referring to FIGS. 8A and 8B, an ILD layer 122 is deposited
over the top surface of semiconductor structure 100 using
conventional techniques such as, for example, CVD. ILD layer 122
can be any material as discussed above for ILD layer 110. Next,
upper metal line trenches 124a and 126a, i.e., metallization Mx
level, are formed by selectively removing ILD layer 122 using, for
example RIE. After the formation of trenches 124a and 126a, via
124b is formed by using a conventional lithography process (i.e.,
depositing an OPL or photoresist followed by patterning) to define
the lithography opening for via 124b, followed by a selective RUE
to etch the ILD 122 present under the trench 124a (not shown). A
second selective RIE is then carried to etch hardmask 106, which is
selective to ILD 110 and hardmask 120 (see FIG. 8A). Via 126b is
formed by using a lithography process to define the lithography
opening for via 126b, followed by a selective RIE to etch the ILD
122 present under the trench 126a (not shown). Next, another
selective RUE is carried to etch hardmask 120, which is selective
to ILD 110 and hardmask 106 (FIG. 8B).
[0052] Once vias 124b and 126b are formed, all lithography
patterning material such as OPL or photoresist, is removed. Next,
an optional thin metal liner such as TiN can be deposited in the
vias 124b and 126b and trenches 124a and 126a (not shown) by
conventional techniques. Next, a conductive material is then
deposited within the trenches 124a and 126a and vias 124b and 126b
by a suitable deposition process including, but not limited, CVD,
PECVD, PVD, plating, thermal or e-beam evaporation, sputtering,
etc. The conductive material can be the same or different
conductive metal as for conductive metal layer 104. In one
embodiment, the conductive material includes, for example, Al, W,
Cu, Co. Ru, Mo, etc. After depositing the conductive material, any
overburden conductive material can be removed by, for example,
CMP.
[0053] It is to be further understood that the methods discussed
herein for fabricating semiconductor structures can be incorporated
within semiconductor processing flows for fabricating other types
of semiconductor devices and integrated circuits with various
analog and digital circuitry or mixed-signal circuitry. In
particular, integrated circuit dies can be fabricated with various
devices such as transistors, diodes, capacitors, inductors, etc. An
integrated circuit in accordance with embodiments can be employed
in applications, hardware, and/or electronic systems. Suitable
hardware and systems for implementing embodiments of the invention
may include, but are not limited to, personal computers,
communication networks, electronic commerce systems, portable
communications devices (e.g., cell phones), solid-state media
storage devices, functional circuitry, etc. Systems and hardware
incorporating such integrated circuits are considered part of the
embodiments described herein.
[0054] Furthermore, various layers, regions, and/or structures
described above may be implemented in integrated circuits (chips).
The resulting integrated circuit chips can be distributed by the
fabricator in raw wafer form (that is, as a single wafer that has
multiple unpackaged chips), as a bare die, or in a packaged form.
In the latter case, the chip is mounted in a single chip package
(such as a plastic carrier, with leads that are affixed to a
motherboard or other higher level carrier) or in a multichip
package (such as a ceramic carrier that has either or both surface
interconnections or buried interconnections). In any case, the chip
is then integrated with other chips, discrete circuit elements,
and/or other signal processing devices as part of either (a) an
intermediate product, such as a motherboard, or (b) an end product.
The end product can be any product that includes integrated circuit
chips, ranging from toys and other low-end applications to advanced
computer products having a display, a keyboard or other input
device, and a central processor.
[0055] Although illustrative embodiments have been described herein
with reference to the accompanying drawings, it is to be understood
that the invention is not limited to those precise embodiments, and
that various other changes and modifications may be made by one
skilled in art without departing from the scope or spirit of the
invention.
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