U.S. patent application number 17/101933 was filed with the patent office on 2021-03-11 for methods and apparatus for controlling ion fraction in physical vapor deposition processes.
The applicant listed for this patent is APPLIED MATERIALS, INC.. Invention is credited to Adolph Miller ALLEN, William FRUCHTERMAN, Joung Joo LEE, Keith A. MILLER, Martin Lee RIKER, Xianmin TANG, Rongjun WANG, Xiaodong WANG, Fuhong ZHANG, Shouyin ZHANG.
Application Number | 20210071294 17/101933 |
Document ID | / |
Family ID | 1000005237545 |
Filed Date | 2021-03-11 |
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United States Patent
Application |
20210071294 |
Kind Code |
A1 |
WANG; Xiaodong ; et
al. |
March 11, 2021 |
METHODS AND APPARATUS FOR CONTROLLING ION FRACTION IN PHYSICAL
VAPOR DEPOSITION PROCESSES
Abstract
Methods and apparatus for controlling the ion fraction in
physical vapor deposition processes are disclosed. In some
embodiments, a physical vapor deposition chamber includes: a body
having an interior volume and a lid assembly including a target to
be sputtered; a magnetron disposed above the target, wherein the
magnetron is configured to rotate a plurality of magnets about a
central axis of the physical vapor deposition chamber; a substrate
support disposed in the interior volume opposite the target and
having a support surface configured to support a substrate; a
collimator disposed between the target and the substrate support,
the collimator having a central region having a first thickness and
a peripheral region having a second thickness less than the first
thickness; a first power source coupled to the target to
electrically bias the target; and a second power source coupled to
the substrate support to electrically bias the substrate
support.
Inventors: |
WANG; Xiaodong; (San Jose,
CA) ; LEE; Joung Joo; (San Jose, CA) ; ZHANG;
Fuhong; (Cupertino, CA) ; RIKER; Martin Lee;
(Milpitas, CA) ; MILLER; Keith A.; (Mountain View,
CA) ; FRUCHTERMAN; William; (Santa Clara, CA)
; WANG; Rongjun; (Dublin, CA) ; ALLEN; Adolph
Miller; (Oakland, CA) ; ZHANG; Shouyin;
(Livermore, CA) ; TANG; Xianmin; (San Jose,
CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
APPLIED MATERIALS, INC. |
Santa Clara |
CA |
US |
|
|
Family ID: |
1000005237545 |
Appl. No.: |
17/101933 |
Filed: |
November 23, 2020 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15448996 |
Mar 3, 2017 |
|
|
|
17101933 |
|
|
|
|
62304173 |
Mar 5, 2016 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C 14/54 20130101;
H01J 37/3405 20130101; H01L 21/76871 20130101; H01L 21/76879
20130101; H01J 37/3458 20130101; H01L 21/2855 20130101; H01J
37/3455 20130101; H01J 37/3447 20130101; C23C 14/351 20130101 |
International
Class: |
C23C 14/35 20060101
C23C014/35; C23C 14/54 20060101 C23C014/54; H01J 37/34 20060101
H01J037/34 |
Claims
1. A physical vapor deposition chamber, comprising: a body having
an interior volume and a lid assembly including a target to be
sputtered; a magnetron disposed above the target, wherein the
magnetron is configured to rotate a plurality of magnets about a
central axis of the physical vapor deposition chamber; a substrate
support disposed in the interior volume opposite the target and
having a support surface configured to support a substrate; a
collimator disposed between the target and the substrate support,
the collimator having a central region having a first thickness and
a peripheral region having a second thickness less than the first
thickness; a first power source coupled to the target to
electrically bias the target; and a second power source coupled to
the substrate support to electrically bias the substrate
support.
2. The physical vapor deposition chamber of claim 1, wherein the
central region of the collimator has a diameter equal to or greater
than a diameter of a substrate to be supported.
3. The physical vapor deposition chamber of claim 1, wherein the
collimator is disposed in an upper portion of the interior volume,
closer to the target than to the substrate support.
4. The physical vapor deposition chamber of claim 1, wherein the
second power source is an RF power source.
5. The physical vapor deposition chamber of claim 1, further
comprising: a shield disposed in the interior volume, wherein the
collimator is coupled to the shield.
6. The physical vapor deposition chamber of claim 5, wherein the
shield includes an upper shield and a lower shield, and wherein the
collimator is coupled to the upper shield.
7. The physical vapor deposition chamber of claim 1, further
comprising: an edge ring disposed on the substrate support.
8. The physical vapor deposition chamber of claim 7, further
comprising: a shield ring configured to mate with the edge
ring.
9. The physical vapor deposition chamber of claim 1, further
comprising: a set of magnets disposed about the body, above a
support surface of the substrate support and below the collimator.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of co-pending U.S. patent
application Ser. No. 15/448,996, filed Mar. 3, 2017, which claims
benefit of U.S. provisional patent application Ser. No. 62/304,173,
filed Mar. 5, 2016. Each of the aforementioned related patent
applications is herein incorporated by reference in their
entireties.
[0002] Embodiments of the present disclosure generally relate to
substrate processing chambers used in semiconductor manufacturing
systems.
BACKGROUND
[0003] Sputtering, also known as physical vapor deposition (PVD),
is a method of forming metallic features in integrated circuits.
Sputtering deposits a material layer on a substrate. A source
material, such as a target, is bombarded by ions strongly
accelerated by an electric field. The bombardment ejects material
from the target, and the material then deposits on the substrate.
During deposition, ejected particles may travel in varying
directions, rather than generally orthogonal to the substrate
surface, undesirably resulting in overhanging structures formed on
corners of high aspect ratio features in the substrate. Overhang
may undesirably result in holes or voids formed within the
deposited material, resulting in diminished electrical conductivity
of the formed feature. Higher aspect ratio geometries have a higher
degree of difficulty to fill without voids.
[0004] Controlling the ion fraction or ion density reaching the
substrate surface to a desired range may improve the bottom and
sidewall coverage during the metal layer deposition process (and
reduce the overhang problem). In one example, the particles
dislodged from the target may be controlled via a process tool such
as a collimator to facilitate providing a more vertical trajectory
of particles into the feature. The collimator provides relatively
long, straight, and narrow passageways between the target and the
substrate to filter out non-vertically travelling particles that
impact and stick to the passageways of the collimator.
[0005] However, the inventors have discovered that in some
applications, collimators may adversely affect the deposition
uniformity on a substrate. Specifically, in some instances, the
shape of the passageways is imprinted on the substrate. The
inventors have further discovered that control over the ions, and
the ion fraction (i.e., the number of ions versus number of neutral
particles in the plasma) can be used to control deposition
characteristics, such as uniformity and the like, on the
substrate.
[0006] Thus, the inventors have provided improved embodiments of
methods and apparatus for controlling the ion fraction in a
physical vapor deposition process.
SUMMARY
[0007] Methods and apparatus for controlling the ion fraction in
physical vapor deposition processes are disclosed. In some
embodiments, a process chamber for processing a substrate having a
given diameter includes: a body having an interior volume and a lid
assembly including a target to be sputtered, wherein the interior
volume includes a central portion having about the given diameter
and a peripheral portion surrounding the central portion; a
magnetron disposed above the target, wherein the magnetron is
configured to rotate a plurality of magnets about a central axis of
the process chamber to form an annular plasma in the peripheral
portion of the interior volume, and wherein a radius of rotation of
the plurality of magnets is substantially equal to or greater than
the given diameter; a substrate support disposed in the interior
volume opposite the target and having a support surface configured
to support a substrate having the given diameter; a first set of
magnets disposed about the body and proximate the target to form a
magnetic field having substantially vertical magnetic field lines
in the peripheral portion; a second set of magnets disposed about
the body and above a support surface of the substrate support to
form a magnetic field having magnetic field lines directed toward a
center of the support surface; a first power source coupled to the
target to electrically bias the target; and a second power source
coupled to the substrate support to electrically bias the substrate
support.
[0008] In some embodiments, a process chamber for processing a
substrate having a given diameter includes: a body having an
interior volume and a lid assembly including a target to be
sputtered, wherein the interior volume includes a central portion
having about the given diameter and a peripheral portion
surrounding the central portion; a magnetron disposed above the
target, wherein the magnetron is configured to rotate a plurality
of magnets about a central axis of the process chamber to form a
plasma in the peripheral portion of the interior volume, and
wherein a radius of rotation of the plurality of magnets is
substantially equal to or greater than the given diameter; a
substrate support disposed in the interior volume opposite the
target and having a support surface configured to support a
substrate having the given diameter; a collimator disposed between
the target and the substrate support; a first set of magnets
disposed about the body and proximate the target to form a magnetic
field having substantially vertical magnetic field lines in the
peripheral portion and through the collimator; a second set of
magnets disposed about the body and above a support surface of the
substrate support to form a magnetic field having magnetic field
lines directed toward a center of the support surface; a third set
of magnets disposed about the body at a height even with or below a
substrate-facing surface of the collimator, wherein the third set
of magnets are configured to create a magnetic field having
magnetic field lines directed inward and downward toward the
central portion and toward the center of the support surface; a
first power source coupled to the target to electrically bias the
target; and a second power source coupled to the substrate support
to electrically bias the substrate support.
[0009] In some embodiments, a method of processing a substrate
includes: forming a plasma within an annular region of a process
chamber above a substrate and proximate a target to sputter
material from the target, wherein an inner diameter of the annular
region is substantially equal to or greater than a diameter of the
substrate such that a predominant portion of the plasma is disposed
in a position both above and radially outward of the substrate;
guiding materials sputtered from the target toward the substrate;
and depositing materials sputtered form the target on the
substrate.
[0010] Other and further embodiments of the present disclosure are
described below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Embodiments of the present disclosure, briefly summarized
above and discussed in greater detail below, can be understood by
reference to the illustrative embodiments of the disclosure
depicted in the appended drawings. However, the appended drawings
illustrate only typical embodiments of the disclosure and are
therefore not to be considered limiting of scope, for the
disclosure may admit to other equally effective embodiments.
[0012] FIG. 1 depicts a schematic cross-sectional view of a process
chamber in accordance with the some embodiments of the present
disclosure.
[0013] FIG. 2 depicts a top view of a collimator in accordance with
some embodiments of the present disclosure.
[0014] FIG. 3 is a flowchart depicting a method of processing a
substrate in accordance with some embodiments of the present
disclosure.
[0015] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. The figures are not drawn to scale
and may be simplified for clarity. Elements and features of some
embodiments may be beneficially incorporated in other embodiments
without further recitation.
DETAILED DESCRIPTION
[0016] Embodiments of methods and apparatus for controlling the ion
fraction in physical vapor deposition processes are disclosed
herein. The inventive methods and apparatus advantageously provide
for greater control over the ions in PVD processes, thus further
advantageously facilitating control over deposition results, such
as uniformity of deposition of material on a substrate. Embodiments
of the inventive apparatus and methods may also advantageously
improve deposition in features in a substrate and reduces the
necessary deposition rate by increasing the number of ions and
decreasing the number of neutrals deposited on the substrate.
[0017] Embodiments of the present disclosure are illustratively
described herein with respect to a physical vapor deposition (PVD)
chamber. However, the inventive method may be used in any process
chamber modified in accordance with the teachings disclosed herein.
FIG. 1 illustrates a PVD chamber (process chamber 100), e.g., a
sputter process chamber, in accordance with embodiments of the
present disclosure, suitable for sputter depositing materials on a
substrate having a given diameter. In some embodiments, the PVD
chamber further includes a collimator 118 disposed therein and
supported by a process tool adapter 138. In the embodiment
illustrated in FIG. 1, the process tool adapter 138 is a cooled
process tool adapter. Illustrative examples of suitable PVD
chambers that may be adapted to benefit from the disclosure include
the ALPS.RTM. Plus and SIP ENCORE.RTM. PVD processing chambers,
both commercially available from Applied Materials, Inc., of Santa
Clara, Calif. Other processing chambers available from Applied
Materials, Inc. as well as other manufacturers may also be adapted
in accordance with the embodiments described herein.
[0018] The process chamber 100 generally includes an upper sidewall
102, a lower sidewall 103, a ground adapter 104, and a lid assembly
111 defining a body 105 that encloses an interior volume 106. The
interior volume 106 includes a central portion having about the
given diameter of the substrate to be processed and a peripheral
portion surrounding the central portion. In addition, the interior
volume 106 includes an annular region above the substrate and
proximate a target, wherein an inner diameter of the annular region
is substantially equal to or greater than a diameter of the
substrate such that a predominant portion of the plasma is disposed
in a position both above and radially outward of the substrate.
[0019] An adapter plate 107 may be disposed between the upper
sidewall 102 and the lower sidewall 103. A substrate support 108 is
disposed in the interior volume 106 of the process chamber 100. The
substrate support 108 is configured to support a substrate having a
given diameter (e.g., 150 mm, 200 mm, 300 mm, 450 mm, or the like).
A substrate transfer port 109 is formed in the lower sidewall 103
for transferring substrates into and out of the interior volume
106.
[0020] In some embodiments, the process chamber 100 is configured
to deposit, for example, titanium, aluminum oxide, aluminum,
aluminum oxynitride, copper, tantalum, tantalum nitride, tantalum
oxynitride, titanium oxynitride, tungsten, or tungsten nitride on a
substrate, such as the substrate 101. Non-limiting examples of
suitable applications include seed layer deposition in vias,
trenches, dual damascene structures, or the like.
[0021] A gas source 110 is coupled to the process chamber 100 to
supply process gases into the interior volume 106. In some
embodiments, process gases may include inert gases, non-reactive
gases, and reactive gases, if necessary. Examples of process gases
that may be provided by the gas source 110 include, but not limited
to, argon gas (Ar), helium (He), neon gas (Ne), nitrogen gas
(N.sub.2), oxygen gas (O.sub.2), and water (H.sub.2O) vapor among
others.
[0022] A pumping device 112 is coupled to the process chamber 100
in communication with the interior volume 106 to control the
pressure of the interior volume 106. In some embodiments, during
deposition the pressure level of the process chamber 100 may be
maintained at about 1 Torr or less. In some embodiments, the
pressure level of the process chamber 100 may be maintained at
about 500 mTorr or less during deposition. In some embodiments, the
pressure level of the process chamber 100 may be maintained at
about 1 mTorr to about 300 mTorr during deposition.
[0023] The ground adapter 104 may support a target, such as target
114. The target 114 is fabricated from a material to be deposited
on the substrate. In some embodiments, the target 114 may be
fabricated from titanium (Ti), tantalum (Ta), tungsten (W), cobalt
(Co), nickel (Ni), copper (Cu), aluminum (Al), alloys thereof,
combinations thereof, or the like. In some embodiments, the target
114 may be fabricated from copper (Cu), titanium (Ti), tantalum
(Ta), or aluminum (AI).
[0024] The target 114 may be coupled to a source assembly
comprising a power supply 117 for the target 114. In some
embodiments, the power supply 117 may be an RF power supply, which
may be coupled to the target 114 via a match network 116. In some
embodiments, the power supply 117 may alternatively be a DC power
supply, in which case the match network 116 is omitted. In some
embodiments, the power supply 117 may include both DC and RF power
sources.
[0025] A magnetron 170 is positioned above the target 114. The
magnetron 170 may include a plurality of magnets 172 supported by a
base plate 174 connected to a shaft 176, which may be axially
aligned with the central axis of the process chamber 100 and the
substrate 101. The magnets 172 produce a magnetic field within the
process chamber 100 near the front face of the target 114 to
generate plasma so a significant flux of ions strike the target
114, causing sputter emission of target material. The magnets 172
may be rotated about the shaft 176 to increase uniformity of the
magnetic field across the surface of the target 114. Examples of
the magnetron include an electromagnetic linear magnetron, a
serpentine magnetron, a spiral magnetron, a double-digitated
magnetron, a rectangularized spiral magnetron, a dual motion
magnetron, among others. The magnets 172 are rotated about the
central axis of the process chamber 100 within an annular region
extending between about the outer diameter of the substrate to
about the outer diameter of the interior volume 106. In general,
magnets 172 may be rotated such that the innermost magnet position
during rotation of the magnets 172 is disposed above or outside of
the diameter of the substrate being processed (e.g., the distance
from the axis of rotation to the innermost position of the magnets
172 is equal to or greater than the diameter of the substrate being
processed).
[0026] The magnetron may have any suitable pattern of motion
wherein the magnets of the magnetron are rotated within an annular
region between about the outer diameter of the substrate and the
inner diameter of the processing volume. In some embodiments, the
magnetron 170 has a fixed radius of rotation of the magnets 172
about the central axis of the process chamber 100. In some
embodiments, the magnetron 170 is configured to have either
multiple radii or an adjustable radii of rotation of the magnets
172 about the central axis of the process chamber 100. For example,
in some embodiments, the magnetron can have a radius of rotation
that is adjustable between about 5.5 inches and about 7 inches (for
example, for processing a 300 mm substrate). For example, in some
embodiments, the magnetron has a dual motion in which the magnets
172 are rotated at a first radius (for example, about 6.7 inches
when processing 300 mm substrates) for a first predetermined time
period, and at a second radius (for example, about 6.0 inches when
processing 300 mm substrates) for a second predetermined time
period. In some embodiments the first and second predetermined time
periods are substantially equal (e.g., the magnetron is rotated at
the first radius for about half of the processing time and at the
second radius for about half of the processing time). In some
embodiments, the magnetron may have rotate at a plurality of radii
(i.e., more than just two) that may be discretely set for distinct
time periods, or that vary continuously throughout processing. The
inventors have discovered that target life and plasma stability are
advantageously further improved when processing using multi-radii
rotation of the magnetron.
[0027] The process chamber 100 further includes an upper shield 113
and a lower shield 120. A collimator 118 is positioned in the
interior volume 106 between the target 114 and the substrate
support 108. In some embodiments, the collimator 118 has a central
region 135 having a thickness T.sub.1 and a peripheral region 133
having a thickness T.sub.2 less than T.sub.1. The central region
135 generally corresponds to the diameter of the substrate being
processed (e.g., is equal to or substantially equal to the diameter
of the substrate). Thus, the peripheral region 133 generally
corresponds to an annular region radially outward of the substrate
being processed (e.g., the inner diameter of the peripheral region
133 is substantially equal to or greater than the diameter of the
substrate). Alternatively, the central region of the collimator 118
may have a diameter greater than that of the substrate being
processed. In some embodiments, the collimator 118 may have a
uniform thickness across the whole collimator without separate
central and peripheral regions. The collimator 118 is coupled to
the upper shield 113 using any fixation means. In some embodiments,
the collimator 118 may be formed integrally with the upper shield
113. In some embodiments, the collimator 118 may be coupled to some
other component within the process chamber and help in position
with respect to the upper shield 113.
[0028] In some embodiments, the collimator 118 may be electrically
biased to control ion flux to the substrate and neutral angular
distribution at the substrate, as well as to increase the
deposition rate due to the added DC bias. Electrically biasing the
collimator results in reduced ion loss to the collimator,
advantageously providing greater ion/neutral ratios at the
substrate. A collimator power source 190 (shown in FIG. 2) is
coupled to the collimator 118 to facilitate biasing of the
collimator 118.
[0029] In some embodiments, the collimator 118 may be electrically
isolated from grounded chamber components such as the ground
adapter 104. For example, as depicted in FIG. 1, the collimator 118
is coupled to the upper shield 113, which in turn is coupled to the
process tool adapter 138. The process tool adapter 138 may be made
from suitable conductive materials compatible with processing
conditions in the process chamber 100. An insulator ring 156 and an
insulator ring 157 are disposed on either side of the process tool
adapter 138 to electrically isolate the process tool adapter 138
from the ground adapter 104. The insulator rings 156, 157 may be
made from suitable process compatible dielectric materials.
[0030] In some embodiments, a first set of magnets 196 may be
disposed adjacent to the ground adapter 104 to assist with
generating the magnetic field to guide dislodged ions from the
target 114 through the peripheral region 133. The magnetic field
formed by the first set of magnets 196 may alternatively or in
combination prevent ions from hitting the sidewalls of the chamber
(or sidewalls of the upper shield 113) and direct the ions
vertically through the collimator 118. For example, the first set
of magnets 196 are configured to form a magnetic field having
substantially vertical magnetic field lines in the peripheral
portion. The substantially vertical magnetic field lines
advantageously guide ions through the peripheral portion of the
interior volume, and, when present, through the peripheral region
133 of the collimator 118.
[0031] In some embodiments, a second set of magnets 194 may be
disposed in a position to form a magnetic field between the bottom
of the collimator 118 and the substrate to guide the metallic ions
dislodged from the target 114 and distribute the ions more
uniformly over the substrate 101. For example, in some embodiments,
the second set of magnets may be disposed between the adapter plate
107 and the upper sidewall 102. For example, the second set of
magnets 194 are configured to form a magnetic field having magnetic
field lines directed toward a center of the support surface. The
magnetic field lines directed toward the center of the support
surface advantageously redistribute ions from the peripheral
portion of the interior volume to the central portion of the
interior volume and over the substrate 101.
[0032] In some embodiments, a third set of magnets 154 may be
disposed between the first and second set of magnets 196, 194 and
about centered with or below a substrate-facing surface of the
central region 135 of the collimator 118 to further guide the
metallic ions towards the center of the substrate 101. For example,
the third set of magnets 154 are configured to create a magnetic
field having magnetic field lines directed inward and downward
toward the central portion and toward the center of the support
surface. The magnetic field lines directed toward the center of the
support surface further advantageously redistribute ions from the
peripheral portion of the interior volume to the central portion of
the interior volume and over the substrate 101.
[0033] The numbers of the magnets disposed around the process
chamber 100 may be selected to control plasma dissociation,
sputtering efficiency, and ion control. The first, second, and
third sets of magnets 196, 194, 154 may include any combination of
electromagnets and/or permanent magnets necessary to guide the
metallic ions along a desired trajectory from the target, through
the collimator, and toward the center of the substrate support 108.
The first, second, and third sets of magnets 196, 194, 154 may be
stationary or moveable to adjust the position of a set of magnets
in a direction parallel to a central axis of the chamber.
[0034] An RF power source 180 may be coupled to the process chamber
100 through the substrate support 108 to provide a bias power
between the target 114 and the substrate support 108. In some
embodiments, the RF power source 180 may have a frequency between
about 400 Hz and about 60 MHz, such as about 13.56 MHz. In some
embodiments, the third set of magnets 154 may be excluded and the
bias power used to attract the metallic ions towards the center of
the substrate 101.
[0035] In operation, the magnets 172 are rotated to form a plasma
165 in the annular portion of the interior volume 106 to sputter
the target 114. The plasma 165 may be formed above the peripheral
region 133 of the collimator, when the collimator 118 is present to
sputter the target 114 above the peripheral region 133. The radius
of rotation of the magnets 172 is greater than the radius of the
substrate 101 to ensure that little to no sputtered material exists
above the substrate 101. Non-limiting examples of suitable
magnetrons that can be modified to rotate at a suitable radius or
range of radii in accordance with the present disclosure include
the magnetron disclosed in U.S. Pat. No. 8,114,256, issued Feb. 14,
2012 to Chang et al., and entitled "Control of Arbitrary Scan Path
of a Rotating Magnetron," and U.S. Pat. No. 9,580,795, issued Feb.
28, 2017 to Miller et al., and entitled "Sputter Source for Use in
a Semiconductor Process Chamber."
[0036] The first set of magnets 196 forms a magnetic field
proximate the peripheral region 133 to attract the sputtered
materials towards the peripheral region 133. In some embodiments, a
predominant portion of the sputtered materials (e.g., the ionized
sputtered materials) are drawn toward the peripheral region by the
first set of magnets.
[0037] The collimator 118 is positively biased so that the metallic
sputtered material is forced through the collimator 118. However,
because the plasma 165 and most, if not all, of the metallic
sputtered material are disposed at the peripheral region 133, the
metallic sputtered material only travels through the peripheral
region 133. Moreover, most, if not all, of the neutral sputtered
material traveling toward the central region of the collimator will
likely collide with and stick to the collimator walls. In addition
to the bias power applied to the substrate support 108, the second
set of magnets 194 and the third set of magnets 154 (when present)
redirect the trajectory of the sputtered metallic ions towards the
center of the substrate 101. As a result, imprints on the substrate
caused by the shape of the collimator 118 are avoided and a more
uniform deposition is achieved.
[0038] Because the directionality of the metallic neutrals cannot
be changed, most, if not all, of the metallic neutrals are
advantageously not deposited on the substrate. To ensure that the
trajectory of the sputtered metallic ions has enough space to be
changed, the collimator 118 is disposed at a predetermined height
h.sub.1 above a support surface 119 of the substrate support 108.
In some embodiments, the height h.sub.1 (measured from the bottom
of the collimator 118 to the support surface 119) is between about
400 mm to about 800 mm, for example, about 600 mm. The height
h.sub.1 is also chosen to facilitate control of ions using the
magnetic field beneath the collimator 118 to further improve
deposition characteristics on the substrate 101. To enable
modulation of the magnetic field above the collimator 118, the
collimator 118 may be disposed at a predetermined height h.sub.2
beneath the target 114. The height h.sub.2 may be between about 25
mm to about 75 mm, for example, about 50 mm. The overall target to
substrate spacing (or target to support surface spacing), is about
600 mm to about 800 mm.
[0039] The process tool adapter 138 includes one or more features
to facilitate supporting a process tool within the interior volume
106, such as the collimator 118. For example, as shown in FIG. 1,
the process tool adapter 138 includes a mounting ring, or shelf 164
that extends in a radially inward direction to support the upper
shield 113. In some embodiments, the mounting ring or shelf 164 is
a continuous ring about the inner diameter of the process tool
adapter 138 to facilitate more uniform thermal contact with the
upper shield 113 mounted to the process tool adapter 138.
[0040] In some embodiments, a coolant channel 166 may be provided
in the process tool adapter 138 to facilitate flowing a coolant
through the process tool adapter 138 to remove heat generated
during processing. For example, the coolant channel 166 may be
coupled to a coolant source 153 to provide a suitable coolant, such
as water. The coolant channel 166 advantageously removes heat from
the process tool (e.g., collimator 118) that is not readily
transferred to other cooled chamber components, such as the ground
adapter 104. For example, the insulator rings 156, 157 disposed
between the process tool adapter 138 and the ground adapter 104 are
typically made from materials with poor thermal conductivity. Thus,
the insulator rings 156, 157 reduce the rate of heat transfer from
the collimator 118 to the ground adapter 104 and the process tool
adapter 138 advantageously maintains or increases the rate of
cooling of the collimator 118. In addition to the coolant channel
166 provided in the process tool adapter 138, the ground adapter
104 may also include a coolant channel to further facilitate
removing heat generated during processing.
[0041] A radially inwardly extending ledge (e.g., the mounting
ring, or shelf 164) is provided to support the upper shield 113
within the central opening within the interior volume 106 of the
process chamber 100. In some embodiments the shelf 164 is disposed
in a location proximate the coolant channel 166 to facilitate
maximizing the heat transfer from the collimator 118 to the coolant
flowing in the coolant channel 166 during use.
[0042] In some embodiments, the lower shield 120 may be provided in
proximity to the collimator 118 and interior of the ground adapter
104 or the upper sidewall 102. The collimator 118 includes a
plurality of apertures to direct gas and/or material flux within
the interior volume 106. The collimator 118 may be coupled to the
collimator power source via the process tool adapter 138.
[0043] The lower shield 120 may include a tubular body 121 having a
radially outwardly extending flange 122 disposed in an upper
surface of the tubular body 121. The flange 122 provides a mating
interface with an upper surface of the upper sidewall 102. In some
embodiments, the tubular body 121 of the lower shield 120 may
include a shoulder region 123 having an inner diameter that is less
than the inner diameter of the remainder of the tubular body 121.
In some embodiments, the inner surface of the tubular body 121
transitions radially inward along a tapered surface 124 to an inner
surface of the shoulder region 123. A shield ring 126 may be
disposed in the process chamber 100 adjacent to the lower shield
120 and intermediate of the lower shield 120 and the adapter plate
107. The shield ring 126 may be at least partially disposed in a
recess 128 formed by an opposing side of the shoulder region 123 of
the lower shield 120 and an interior sidewall of the adapter plate
107.
[0044] In some embodiments, the shield ring 126 may include an
axially projecting annular sidewall 127 that has an inner diameter
that is greater than an outer diameter of the shoulder region 123
of the lower shield 120. A radial flange 130 extends from the
annular sidewall 127. The radial flange 130 may be formed at an
angle greater than about ninety degrees (90.degree.) relative to
the inside diameter surface of the annular sidewall 127 of the
shield ring 126. The radial flange 130 includes a protrusion 132
formed on a lower surface of the radial flange 130. The protrusion
132 may be a circular ridge extending from the surface of the
radial flange 130 in an orientation that is substantially parallel
to the inside diameter surface of the annular sidewall 127 of the
shield ring 126. The protrusion 132 is generally adapted to mate
with a recess 134 formed in an edge ring 136 disposed on the
substrate support 108. The recess 134 may be a circular groove
formed in the edge ring 136. The engagement of the protrusion 132
and the recess 134 centers the shield ring 126 with respect to the
longitudinal axis of the substrate support 108. The substrate 101
(shown supported on lift pins 140) is centered relative to the
longitudinal axis of the substrate support 108 by coordinated
positioning calibration between the substrate support 108 and a
robot blade (not shown). Thus, the substrate 101 may be centered
within the process chamber 100 and the shield ring 126 may be
centered radially about the substrate 101 during processing.
[0045] In operation, a robot blade (not shown) having the substrate
101 disposed thereon is extended through the substrate transfer
port 109. The substrate support 108 may be lowered to allow the
substrate 101 to be transferred to the lift pins 140 extending from
the substrate support 108. Lifting and lowering of the substrate
support 108 and/or the lift pins 140 may be controlled by a drive
142 coupled to the substrate support 108. The substrate 101 may be
lowered onto a substrate receiving surface 144 of the substrate
support 108. With the substrate 101 positioned on the substrate
receiving surface 144 of the substrate support 108, sputter
deposition may be performed on the substrate 101. The edge ring 136
may be electrically insulated from the substrate 101 during
processing. Therefore, the substrate receiving surface 144 may
include a height that is greater than a height of portions of the
edge ring 136 adjacent the substrate 101 such that the substrate
101 is prevented from contacting the edge ring 136. During sputter
deposition, the temperature of the substrate 101 may be controlled
by utilizing thermal control channels 146 disposed in the substrate
support 108.
[0046] After sputter deposition, the substrate 101 may be elevated
utilizing the lift pins 140 to a position that is spaced away from
the substrate support 108. The elevated location may be proximate
one or both of the shield ring 126 and a reflector ring 148
adjacent to the adapter plate 107. The adapter plate 107 includes
one or more lamps 150 coupled to the adapter plate 107 at a
position intermediate of a lower surface of the reflector ring 148
and a concave surface 152 of the adapter plate 107. The lamps 150
provide optical and/or radiant energy in the visible or near
visible wavelengths, such as in the infra-red (IR) and/or
ultraviolet (UV) spectrum. The energy from the lamps 150 is focused
radially inward toward the backside (i.e., lower surface) of the
substrate 101 to heat the substrate 101 and the material deposited
thereon. Reflective surfaces on the chamber components surrounding
the substrate 101 serve to focus the energy toward the backside of
the substrate 101 and away from other chamber components where the
energy would be lost and/or not utilized. The adapter plate 107 may
be coupled to the coolant source 153 to control the temperature of
the adapter plate 107 during heating.
[0047] After controlling the substrate 101 to a predetermined
temperature, the substrate 101 is lowered to a position on the
substrate receiving surface 144 of the substrate support 108. The
substrate 101 may be rapidly cooled utilizing the thermal control
channels 146 in the substrate support 108 via conduction. The
temperature of the substrate 101 may be ramped down from the first
temperature to a second temperature in a matter of seconds to about
a minute. The substrate 101 may be removed from the process chamber
100 through the substrate transfer port 109 for further processing.
The substrate 101 may be maintained at a predetermined temperature
range, such as less than 250 degrees Celsius.
[0048] A controller 198 is coupled to the process chamber 100. The
controller 198 includes a central processing unit (CPU) 160, a
memory 158, and support circuits 162. The controller 198 is
utilized to control the process sequence, regulating the gas flows
from the gas source 110 into the process chamber 100 and
controlling ion bombardment of the target 114. The CPU 160 may be
of any form of a general purpose computer processor that can be
used in an industrial setting. The software routines can be stored
in the memory 158, such as random access memory, read only memory,
floppy or hard disk drive, or other form of digital storage. The
support circuits 162 are conventionally coupled to the CPU 160 and
may comprise cache, clock circuits, input/output subsystems, power
supplies, and the like. The software routines, when executed by the
CPU 160, transform the CPU into a specific purpose computer
(controller) 198 that controls the process chamber 100 such that
the processes, including the plasma ignition processes disclosed
below, are performed in accordance with embodiments of the present
disclosure. The software routines may also be stored and/or
executed by a second controller (not shown) that is located
remotely from the process chamber 100.
[0049] During processing, material is sputtered from the target 114
and deposited on the surface of the substrate 101. The target 114
and the substrate support 108 are biased relative to each other by
the power supply 117 or the RF power source 180 to maintain a
plasma formed from the process gases supplied by the gas source
110. The DC pulsed bias power applied to the collimator 118 also
assists controlling ratio of the ions and neutrals passing through
the collimator 118, advantageously enhancing the trench sidewall
and bottom fill-up capability. The ions from the plasma are
accelerated toward and strike the target 114, causing target
material to be dislodged from the target 114. The dislodged target
material and process gases forms a layer on the substrate 101 with
desired compositions.
[0050] FIG. 2 depicts a top view of the illustrative collimator 118
coupled to the collimator power source 190 that may be disposed in
the process chamber 100 of FIG. 1. In some embodiments, the
collimator 118 has a generally honeycomb structure having hexagonal
walls 226 separating hexagonal apertures 244 in a close-packed
arrangement. However, other geometric configurations may also be
used. An aspect ratio of the hexagonal apertures 244 may be defined
as the depth of the aperture 244 (equal to the length of the
collimator) divided by the width 246 of the aperture 244. In some
embodiments, the thickness of the walls 226 is about 0.06 inches to
about 0.18 inches. In some embodiments, the thickness of the walls
226 is about 0.12 inches to about 0.15 inches. In some embodiments,
the aspect ratio of the hexagonal apertures 244 may be between
about 1:1 to about 1:5 in the peripheral region 133 and about 3:5
to about 3:6 in the central region 135. In some embodiments, the
collimator 118 is comprised of a material selected from aluminum,
copper, and stainless steel.
[0051] The honeycomb structure of the collimator 118 may serve as
an integrated flux optimizer 210 to optimize the flow path, ion
fraction, and ion trajectory behavior of ions passing through the
collimator 118. In some embodiments, the hexagonal walls 226
adjacent to a shield portion 202 have a chamfer 250 and a radius.
The shield portion 202 of the collimator 118 may assist installing
the collimator 118 into the process chamber 100.
[0052] In some embodiments, the collimator 118 may be machined from
a single mass of aluminum. The collimator 118 may optionally be
coated or anodized. Alternatively, the collimator 118 may be made
from other materials compatible with the processing environment,
and may also be comprised of one or more sections. Alternatively,
the shield portion 202 and the integrated flux optimizer 210 are
formed as separate pieces and coupled together using suitable
attachment means, such as welding.
[0053] FIG. 3 illustrates a method 300 for processing a substrate.
The method 300 may be performed in an apparatus similar to that
discussed above and is described in connection with the process
chamber 100 of FIG. 1. The method generally begins at 302, where a
plasma is formed within an annular region of the process chamber
100. The annular region has an inner diameter substantially equal
to or greater than that of the substrate 101. For example, the
plasma can be formed within an annular region of a process chamber
above a substrate and proximate a target to sputter material from
the target, wherein an inner diameter of the annular region is
substantially equal to or greater than a diameter of the substrate
such that a predominant portion of the plasma is disposed in a
position both above and radially outward of the substrate.
[0054] At 304, materials sputtered from the target are guided
toward the substrate. The materials (e.g., ions) may be guided
toward the substrate using any of the techniques disclosed herein,
alone or in combination. For example, in some embodiments, a
collimator (e.g., collimator 118) may be provided to filter out
materials, such as neutral particles, that do not travel
substantially vertically toward the substrate 101 and thus hit and
stick to the sidewalls of the passages of the collimator 118. In
addition, the collimator 118 may be electrically biased with a
voltage having a polarity that is the same as the polarity of ions
formed in the plasma to reduce impingement of ions on the sidewalls
of the passages of the collimator and to straighten out the
trajectory of the ions to be more vertical, as indicated at 306.
For example, a positive voltage may be provided when positively
charged ions (such as copper ions) are present. Alternatively or in
combination, a first magnetic field can be generated using a first
set of magnets to form a magnetic field having substantially
vertical magnetic field lines in the annular region (and through
the collimator 118, when present), as indicated at 308.
Alternatively or in combination with the foregoing, a second
magnetic field can be generated using a second set of magnets to
form a magnetic field having magnetic field lines directed toward a
center of the substrate, as indicated at 310. Alternatively or in
combination with the foregoing, a third magnetic field can be
generated using a third set of magnets to create a magnetic field
having magnetic field lines directed inward and downward toward the
center of the substrate. Alternatively or in combination with the
foregoing, the substrate support can be electrically biased to
attract ions toward the substrate.
[0055] Next, at 312, materials sputtered from the target are
deposited on the substrate. Upon deposition to a desired thickness,
the method 300 generally ends and further processing of the
substrate may be performed.
[0056] For example, in some embodiments of the method 300, the
plasma 165 is formed above the peripheral region 133 of the
collimator 118 using the magnets 172 and material is sputtered from
the target 114 above the peripheral region 133. A first magnetic
field is generated proximate the peripheral region 133 to attract
the sputtered materials towards the peripheral region 133 using the
first set of magnets 196. The collimator 118 is biased with a
positive voltage to draw the sputtered material through the
peripheral region 133 of collimator 118. A second magnetic field is
generated below the collimator 118 to draw the materials through
the collimator 118 and redirect ions of the sputtered material
towards the center of the substrate support. The second magnetic
field can be generated by one or more of the bias power applied to
the substrate support 108, the second set of magnets 194.
Optionally, a third magnetic field can be generated using the third
set of magnets 154 to create a magnetic field having magnetic field
lines directed inward and downward toward the center of the
substrate 101. In addition, the substrate support 108 can be
electrically biased to attract ions toward the substrate 101.
[0057] Thus, embodiments methods and apparatus for improving
substrate deposition uniformity have been disclosed herein. The
inventors have observed that the inventive methods and apparatus
substantially eliminate imprints caused by conventional deposition
processes using a collimator and result in more uniform deposition
on the substrate being processed.
[0058] While the foregoing is directed to embodiments of the
present disclosure, other and further embodiments of the disclosure
may be devised without departing from the basic scope thereof.
* * * * *