U.S. patent application number 13/404458 was filed with the patent office on 2013-04-18 for package-on-package assembly with wire bond vias.
This patent application is currently assigned to INVENSAS CORPORATION. The applicant listed for this patent is Roseann Alatorre, Ellis Chau, Reynaldo Co, Philip Damberg, Wei-Shun Wang, Se Young Yang. Invention is credited to Roseann Alatorre, Ellis Chau, Reynaldo Co, Philip Damberg, Wei-Shun Wang, Se Young Yang.
Application Number | 20130095610 13/404458 |
Document ID | / |
Family ID | 47892283 |
Filed Date | 2013-04-18 |
United States Patent
Application |
20130095610 |
Kind Code |
A1 |
Chau; Ellis ; et
al. |
April 18, 2013 |
PACKAGE-ON-PACKAGE ASSEMBLY WITH WIRE BOND VIAS
Abstract
A microelectronic package can include wire bonds having bases
bonded to respective ones of conductive elements exposed at a
surface of a substrate. The wire bonds may have exterior edge
surfaces disposed at an angle between 25.degree. and 92.degree.
relative to the bases, and ends remote, e.g., opposite, from the
bases, and remote from the ends which are connected to the bases. A
dielectric encapsulation layer extends from the substrate and
covers portions of the wire bonds such that covered portions of the
wire bonds are separated from one another by the encapsulation
layer, wherein unencapsulated portions of the wire bonds are
defined by portions of the wire bonds that are uncovered by the
encapsulation layer, the unencapsulated portions including the ends
of the wire bonds.
Inventors: |
Chau; Ellis; (San Jose,
CA) ; Co; Reynaldo; (Santa Cruz, CA) ;
Alatorre; Roseann; (San Martin, CA) ; Damberg;
Philip; (Cupertino, CA) ; Wang; Wei-Shun;
(Palo Alto, CA) ; Yang; Se Young; (Cupertino,
CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Chau; Ellis
Co; Reynaldo
Alatorre; Roseann
Damberg; Philip
Wang; Wei-Shun
Yang; Se Young |
San Jose
Santa Cruz
San Martin
Cupertino
Palo Alto
Cupertino |
CA
CA
CA
CA
CA
CA |
US
US
US
US
US
US |
|
|
Assignee: |
INVENSAS CORPORATION
San Jose
CA
|
Family ID: |
47892283 |
Appl. No.: |
13/404458 |
Filed: |
February 24, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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61547930 |
Oct 17, 2011 |
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|
Current U.S.
Class: |
438/109 ;
257/E21.502; 257/E21.505; 257/E21.506; 438/123 |
Current CPC
Class: |
H01L 2225/1029 20130101;
H01L 2924/1815 20130101; H01L 24/85 20130101; H01L 2224/32225
20130101; H01L 2225/1058 20130101; H01L 2924/19107 20130101; H05K
2201/1053 20130101; H01L 2224/73253 20130101; H01L 25/0655
20130101; H01L 2224/0401 20130101; H01L 2224/48997 20130101; H01L
25/0657 20130101; H01L 25/105 20130101; H01L 2924/12042 20130101;
H01L 23/4334 20130101; H01L 2224/32145 20130101; H01L 2224/78301
20130101; H01L 2224/85986 20130101; H01L 2924/01049 20130101; H01L
2224/16145 20130101; H01L 2224/16227 20130101; H01L 2224/32245
20130101; H01L 2224/48227 20130101; H01L 2224/131 20130101; H01L
2224/73207 20130101; H01L 2225/06562 20130101; H01L 2225/1094
20130101; H01L 2924/00011 20130101; H01L 2224/05599 20130101; H01L
2225/0651 20130101; H01L 24/16 20130101; H01L 2924/01047 20130101;
H01L 23/49811 20130101; H01L 2224/4824 20130101; H01L 2225/06517
20130101; H01L 2225/1052 20130101; H01L 2224/851 20130101; H01L
2225/06558 20130101; H01L 2225/1088 20130101; H01L 23/3128
20130101; H01L 23/3677 20130101; H01L 24/73 20130101; H01L
2924/01028 20130101; H01L 2924/01029 20130101; H01L 2924/15331
20130101; Y10T 29/49149 20150115; H01L 2224/45015 20130101; H01L
2224/49171 20130101; H01L 2225/06506 20130101; H01L 2924/1431
20130101; H01L 21/565 20130101; H01L 21/56 20130101; H01L
2224/48145 20130101; H01L 2924/01013 20130101; H01L 23/49517
20130101; H01L 24/06 20130101; H01L 2225/06565 20130101; H01L 24/43
20130101; H01L 24/45 20130101; H01L 2224/16225 20130101; H01L
2224/48245 20130101; H01L 24/78 20130101; H01L 2224/48091 20130101;
H01L 2225/06513 20130101; H01L 2924/00014 20130101; H01L 25/50
20130101; H01L 2224/8518 20130101; H01L 2225/06568 20130101; H01L
2924/1434 20130101; H01L 2924/15311 20130101; H01L 2924/181
20130101; H01L 24/49 20130101; H01L 2224/48247 20130101; H01L
2224/85951 20130101; H01L 21/4853 20130101; H01L 2224/85399
20130101; H01L 2225/1023 20130101; H01L 2924/00012 20130101; H01L
2924/1715 20130101; H01L 23/49816 20130101; H01L 2224/73257
20130101; H05K 3/3436 20130101; H01L 24/48 20130101; H01L
2224/45124 20130101; H01L 2224/45147 20130101; H01L 2224/73204
20130101; H01L 2924/3511 20130101; Y10T 29/49151 20150115; H01L
2224/4554 20130101; H01L 2224/73265 20130101; H05K 2201/10515
20130101; H01L 23/3114 20130101; H01L 2224/45144 20130101; H01L
2224/45565 20130101; H01L 2224/45565 20130101; H01L 2224/45147
20130101; H01L 2224/45664 20130101; H01L 2224/45565 20130101; H01L
2224/45144 20130101; H01L 2224/45664 20130101; H01L 2924/19107
20130101; H01L 2224/45144 20130101; H01L 2224/45565 20130101; H01L
2224/45664 20130101; H01L 2924/19107 20130101; H01L 2224/45147
20130101; H01L 2224/45565 20130101; H01L 2224/45664 20130101; H01L
2224/78301 20130101; H01L 2924/00014 20130101; H01L 2224/85986
20130101; H01L 2224/8518 20130101; H01L 2224/85951 20130101; H01L
2224/49171 20130101; H01L 2224/48227 20130101; H01L 2924/00
20130101; H01L 2224/49171 20130101; H01L 2224/48247 20130101; H01L
2924/00 20130101; H01L 2224/4824 20130101; H01L 2224/49171
20130101; H01L 2924/00 20130101; H01L 2224/73265 20130101; H01L
2224/32145 20130101; H01L 2224/48227 20130101; H01L 2924/00012
20130101; H01L 2224/73265 20130101; H01L 2224/32225 20130101; H01L
2224/48227 20130101; H01L 2924/00012 20130101; H01L 2224/73265
20130101; H01L 2224/32145 20130101; H01L 2224/48145 20130101; H01L
2924/00012 20130101; H01L 2224/73265 20130101; H01L 2224/32245
20130101; H01L 2224/48247 20130101; H01L 2924/00012 20130101; H01L
2224/45144 20130101; H01L 2924/00 20130101; H01L 2224/45124
20130101; H01L 2924/00 20130101; H01L 2224/45147 20130101; H01L
2924/00 20130101; H01L 2224/73265 20130101; H01L 2224/32145
20130101; H01L 2224/48247 20130101; H01L 2924/00 20130101; H01L
2224/73204 20130101; H01L 2224/16225 20130101; H01L 2224/32225
20130101; H01L 2924/00 20130101; H01L 2224/73265 20130101; H01L
2224/32245 20130101; H01L 2224/48227 20130101; H01L 2924/00
20130101; H01L 2224/73265 20130101; H01L 2224/32225 20130101; H01L
2224/48247 20130101; H01L 2924/00 20130101; H01L 2224/73204
20130101; H01L 2224/16145 20130101; H01L 2224/32145 20130101; H01L
2924/00 20130101; H01L 2224/131 20130101; H01L 2924/014 20130101;
H01L 2924/15311 20130101; H01L 2224/73265 20130101; H01L 2224/32225
20130101; H01L 2224/48227 20130101; H01L 2924/00 20130101; H01L
2924/15311 20130101; H01L 2224/73204 20130101; H01L 2224/16225
20130101; H01L 2224/32225 20130101; H01L 2924/00 20130101; H01L
2924/01047 20130101; H01L 2924/00 20130101; H01L 2224/48091
20130101; H01L 2924/00014 20130101; H01L 2224/45015 20130101; H01L
2924/00 20130101; H01L 2224/45144 20130101; H01L 2924/00014
20130101; H01L 2224/45147 20130101; H01L 2924/00014 20130101; H01L
2924/181 20130101; H01L 2924/00 20130101; H01L 2924/12042 20130101;
H01L 2924/00 20130101; H01L 2924/181 20130101; H01L 2924/00012
20130101; H01L 2224/45015 20130101; H01L 2924/20751 20130101; H01L
2224/45015 20130101; H01L 2924/20752 20130101; H01L 2224/45015
20130101; H01L 2924/20753 20130101; H01L 2224/45015 20130101; H01L
2924/20754 20130101; H01L 2224/45015 20130101; H01L 2924/20755
20130101; H01L 2224/45015 20130101; H01L 2924/20756 20130101; H01L
2224/45015 20130101; H01L 2924/20757 20130101; H01L 2224/45015
20130101; H01L 2924/20758 20130101; H01L 2224/45015 20130101; H01L
2924/20759 20130101; H01L 2224/45015 20130101; H01L 2924/2076
20130101; H01L 2224/85399 20130101; H01L 2924/00014 20130101; H01L
2224/05599 20130101; H01L 2924/00014 20130101; H01L 2924/00011
20130101; H01L 2924/01049 20130101 |
Class at
Publication: |
438/109 ;
438/123; 257/E21.506; 257/E21.502; 257/E21.505 |
International
Class: |
H01L 21/60 20060101
H01L021/60; H01L 21/58 20060101 H01L021/58; H01L 21/56 20060101
H01L021/56 |
Claims
1. A method of making a microelectronic package comprising: a)
feeding a metal wire segment having a predetermined length out of a
capillary of a bonding tool; b) moving the face of the capillary
over first and second surfaces of a forming unit to shape the metal
wire segment to have a first portion projecting upwardly in a
direction along an exterior wall of the capillary; and c) using the
bonding tool to bond a second portion of the metal wire to a
conductive element exposed at a first surface of a substrate, the
second portion of the metal wire being positioned to extend along
the conductive element with the first portion positioned at an
angle between 25.degree. and 90.degree. to the second portion; d)
repeating steps (a) through (c) to bond a plurality of the metal
wires to a plurality of the conductive elements of the substrate;
and e) then forming a dielectric encapsulation layer overlying the
surface of the substrate, wherein the encapsulation layer is formed
so as to at least partially cover the surface of the substrate and
portions of the wire bonds, such that unencapsulated portions of
the wire bonds are defined by a portion of at least one of an end
surface or of an edge surface thereof that is uncovered by the
encapsulation layer.
2. The method as set forth in claim 1, wherein a first one of the
wire bonds is adapted for carrying a first signal electric
potential and a second one of the wire bonds is adapted for
simultaneously carrying a second signal electric potential
different form the first signal electric potential.
3. The method as set forth in claim 1, further comprising mounting
and electrically interconnecting a microelectronic element with the
substrate, the method electrically interconnecting the
microelectronic element with at least some of the wire bonds.
4. The method as set forth in claim 1, wherein the substrate is a
circuit panel.
5. The method as set forth in claim 1, wherein the substrate is a
lead frame, the method further comprising mounting and electrically
interconnecting a microelectronic element with the lead frame, the
method electrically interconnecting the microelectronic element
with at least some of the wire bonds.
6. The method as set forth in claim 1, wherein the substrate is a
first microelectronic element, further comprising mounting and
electrically interconnecting a second microelectronic element with
the first microelectronic element, the method electrically
interconnecting the second microelectronic element with at least
some of the wire bonds through the first microelectronic
element.
7. The method as set forth in claim 1, wherein the metal wire
segment is a first metal wire segment, step (b) further includes
after forming the upwardly projecting portion: (i) feeding out a
second metal wire segment integral with the first metal wire
segment, and (ii) moving the face of the capillary over a third
surface of the forming unit to shape the second metal wire segment
to have a second portion projecting upwardly along the exterior
wall of the capillary, the second portion being connected to the
first upwardly projecting portion by a third portion of the metal
wire.
8. The method as set forth in claim 1, wherein step (e) includes
forming an initial encapsulation layer, and then recessing at least
a portion of the initial encapsulation layer to form the
encapsulation layer and to define the unencapsulated portions of
the wire bonds.
9. The method as set forth in claim 8, wherein the step of
recessing includes laser ablating the initial encapsulation
layer.
10. The method as set forth in claim 8, wherein the step of
recessing includes wet blasting the initial encapsulation
layer.
11. The method as set forth in claim 1, wherein step (e) includes
molding the encapsulation layer with a temporary film between the
encapsulant and a plate of the mold, wherein the wire bonds extend
into the temporary film, and then removing the temporary film to
expose the unencapsulated portions of the wire bonds.
12. The method as set forth in claim 11, wherein step (e) further
comprises applying a portion of a continuous sheet of the temporary
film to the mold plate, then forming the encapsulation layer in a
cavity at least partially defined by the mold plate, and then
replacing the current portion of the temporary film with another
portion of the continuous sheet of the temporary film.
13. The method as set forth in claim 11, further comprising after
forming the encapsulation layer, forming second conductive elements
contacting the unencapsulated portions of the wire bonds.
14. The method as set forth in claim 13, wherein the step of
forming the second conductive elements includes depositing an
electrically conductive material onto the unencapsulated portions
of the wire bonds.
15. The method as set forth in claim 14, wherein the step of
forming the second conductive elements includes plating a metal
layer onto the unencapsulated portions of the wire bonds.
16. The method as set forth in claim 14, wherein the step of
forming the second conductive elements includes depositing
electrically conductive paste onto the unencapsulated portions of
the wire bonds.
17. The method as set forth in claim 14, wherein the step of
depositing the electrically conductive material includes at least
one of dispensing, stenciling, screen printing, or spraying the
conductive material onto the unencapsulated portions of the wire
bonds.
18. The method as set forth in claim 1, wherein the exterior wall
of the capillary is substantially vertical, and wherein moving the
face of the capillary over the second surface of the forming unit
is such that the first portion of the metal wire segment is between
about 80.degree. and 90.degree. with respect to the second
portion.
19. The method as set forth in claim 1, wherein at least two wire
bonds are formed on at least one of the conductive elements.
20. The method as set forth in claim 1, wherein the capillary
defines an opening through which the metal wire segment is fed and
a front wall extending from around the opening to an edge defined
with the exterior wall, the front face defining a raised portion
adjacent the edge, and wherein during step (b) the raised portion
is pressed into the metal wire at a location proximate to the first
portion.
21. The method as set forth in claim 1, wherein the encapsulation
layer is formed to include a major surface and an alignment surface
angled with respect to the major surface, at least one
unencapsulated portion of the wire bond being positioned on the
major surface and the alignment surface intersecting the major
surface at a location in proximity to the unencapsulated portion
such that the alignment surface is configured to guide an
electrically conductive protrusion disposed above the alignment
surface towards the unencapsulated portion of the wire bond.
22. The method as set forth in claim 21, wherein encapsulation
layer is further formed to define a corner region thereof and to
further include at least one minor surface positioned within the
corner region and being positioned farther from the substrate than
the major surface, the alignment surface extending between the
minor surface and the major surface.
23. The method as set forth in claim 21, wherein the major surface
of the encapsulation layer is a first major surface that overlies
the first region of the substrate, the encapsulation layer being
further formed to define a second major surface overlying the
second region and being positioned closer to the substrate than the
major surface, the alignment surface extending between the minor
surface and the major surface.
24. The method as set forth in claim 1, further comprising forming
a ball bond over the second portion of the metal wire after bonding
the second portion to the conductive element.
25. A method for making a microelectronic assembly, comprising:
aligning a second microelectronic package with a first
microelectronic package made according to the method of claim 21,
the second microelectronic package including a substrate defining a
first surface with contact pads exposed thereon and conductive
masses joined with the contact pads, wherein the second
microelectronic package is aligned with the first microelectronic
package by moving at least one of the solder balls into contact
with both the alignment surface and at least the end surface of at
least one wire bond; and reflowing the conductive masses to join
the conductive masses with respective ones of the unencapsulated
portions of the wire bonds.
26. A method of making a microelectronic assembly, comprising: a)
positioning a first microelectronic package over a second
microelectronic package, the first microelectronic package
including a substrate having a first surface having terminals
exposed thereon, the terminals including joining elements
projecting away from the first surface, and the second
microelectronic package including: a substrate having a first
region and a second region, the substrate having a first surface
and a second surface remote from the first surface; at least one
microelectronic element overlying the first surface within the
first region; electrically conductive elements exposed at at least
one of the first surface and the second surface of the substrate
within the second region, at least some of the conductive elements
being electrically connected to the at least one microelectronic
element; wire bonds defining edge surfaces and having bases bonded
to respective ones of the conductive elements, the bases including
first portions of the edge surfaces that extend along the
conductive elements with respective second portions of the edge
surfaces being at an angle between 25.degree. and 92.degree.
relative to the first portions, the wire bonds further having ends
remote from the substrate and remote from the bases; and a
dielectric encapsulation layer extending from at least one of the
first or second surfaces and covering portions of the wire bonds
such that covered portions of the wire bonds are separated from one
another by the encapsulation layer, the encapsulation layer
overlying at least the second region of the substrate, wherein
unencapsulated portions of the wire bonds are defined by portions
of the wire bonds that are uncovered by the encapsulation layer,
the unencapsulated portions including the ends; and b) reflowing
the joining elements to join with the unencapsulated wire bond
portions of the second microelectronic package.
27. The method as set forth in claim 26, further including the step
of forming an underfill filling a space defined between confronting
surfaces of the first microelectronic package and the second
microelectronic package and surrounding the conductive projections
between the terminals of the first microelectronic package and the
unencapsulated wire bond portions of the second microelectronic
package.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of the filing date of
U.S. Provisional Application 61/547,930 filed Oct. 17, 2011, the
disclosure of which is incorporated by reference herein.
BACKGROUND OF THE INVENTION
[0002] Microelectronic devices such as semiconductor chips
typically require many input and output connections to other
electronic components. The input and output contacts of a
semiconductor chip or other comparable device are generally
disposed in grid-like patterns that substantially cover a surface
of the device (commonly referred to as an "area array") or in
elongated rows which may extend parallel to and adjacent each edge
of the device's front surface, or in the center of the front
surface. Typically, devices such as chips must be physically
mounted on a substrate such as a printed circuit board, and the
contacts of the device must be electrically connected to
electrically conductive features of the circuit board.
[0003] Semiconductor chips are commonly provided in packages that
facilitate handling of the chip during manufacture and during
mounting of the chip on an external substrate such as a circuit
board or other circuit panel. For example, many semiconductor chips
are provided in packages suitable for surface mounting. Numerous
packages of this general type have been proposed for various
applications. Most commonly, such packages include a dielectric
element, commonly referred to as a "chip carrier" with terminals
formed as plated or etched metallic structures on the dielectric.
These terminals typically are connected to the contacts of the chip
itself by features such as thin traces extending along the chip
carrier itself and by fine leads or wires extending between the
contacts of the chip and the terminals or traces. In a surface
mounting operation, the package is placed onto a circuit board so
that each terminal on the package is aligned with a corresponding
contact pad on the circuit board. Solder or other bonding material
is provided between the terminals and the contact pads. The package
can be permanently bonded in place by heating the assembly so as to
melt or "reflow" the solder or otherwise activate the bonding
material.
[0004] Many packages include solder masses in the form of solder
balls, typically about 0.1 mm and about 0.8 mm (5 and 30 mils) in
diameter, attached to the terminals of the package. A package
having an array of solder balls projecting from its bottom surface
is commonly referred to as a ball grid array or "BGA" package.
Other packages, referred to as land grid array or "LGA" packages
are secured to the substrate by thin layers or lands formed from
solder. Packages of this type can be quite compact. Certain
packages, commonly referred to as "chip scale packages," occupy an
area of the circuit board equal to, or only slightly larger than,
the area of the device incorporated in the package. This is
advantageous in that it reduces the overall size of the assembly
and permits the use of short interconnections between various
devices on the substrate, which in turn limits signal propagation
time between devices and thus facilitates operation of the assembly
at high speeds.
[0005] Packaged semiconductor chips are often provided in "stacked"
arrangements, wherein one package is provided, for example, on a
circuit board, and another package is mounted on top of the first
package. These arrangements can allow a number of different chips
to be mounted within a single footprint on a circuit board and can
further facilitate high-speed operation by providing a short
interconnection between packages. Often, this interconnect distance
is only slightly larger than the thickness of the chip itself. For
interconnection to be achieved within a stack of chip packages, it
is necessary to provide structures for mechanical and electrical
connection on both sides of each package (except for the topmost
package). This has been done, for example, by providing contact
pads or lands on both sides of the substrate to which the chip is
mounted, the pads being connected through the substrate by
conductive vias or the like. Solder balls or the like have been
used to bridge the gap between the contacts on the top of a lower
substrate to the contacts on the bottom of the next higher
substrate. The solder balls must be higher than the height of the
chip in order to connect the contacts. Examples of stacked chip
arrangements and interconnect structures are provided in U.S.
Patent App. Pub. No. 2010/0232129 ("the '129 Publication"), the
disclosure of which is incorporated by reference herein in its
entirety.
[0006] Microcontact elements in the form of elongated posts or pins
may be used to connect microelectronic packages to circuit boards
and for other connections in microelectronic packaging. In some
instances, microcontacts have been formed by etching a metallic
structure including one or more metallic layers to form the
microcontacts. The etching process limits the size of the
microcontacts. Conventional etching processes typically cannot form
microcontacts with a large ratio of height to maximum width,
referred to herein as "aspect ratio". It has been difficult or
impossible to form arrays of microcontacts with appreciable height
and very small pitch or spacing between adjacent microcontacts.
Moreover, the configurations of the microcontacts formed by
conventional etching processes are limited.
[0007] Despite all of the above-described advances in the art,
still further improvements in making and testing microelectronic
packages would be desirable.
SUMMARY OF THE INVENTION
[0008] A method of making a microelectronic package according to an
aspect of the invention can include feeding a metal wire segment
having a predetermined length out of a capillary of a bonding tool.
The face of the capillary can be moved over first and second
surfaces of a forming unit to shape the metal wire segment to have
a first portion projecting upwardly in a direction along an
exterior wall of the capillary. The bonding tool can be used to
bond a second portion of the metal wire to a conductive element
exposed at a first surface of a substrate. The second portion of
the metal wire can be positioned to extend along the conductive
element, with the first portion positioned at an angle between
25.degree. and 90.degree. to the second portion, for example. Steps
(a) through (c) can be repeated to bond a plurality of the metal
wires to a plurality of the conductive elements of the substrate. A
dielectric encapsulation layer can be formed to overlie the surface
of the substrate. The encapsulation layer can be formed so as to at
least partially cover the surface of the substrate and portions of
the wire bonds. An unencapsulated portion of a wire bond can be
defined by a portion of at least one of an end surface of a wire
bond or of an edge surface thereof that is uncovered by the
encapsulation layer.
[0009] In one example, a first one of the wire bonds can be adapted
for carrying a first signal electric potential and a second one of
the wire bonds is adapted for simultaneously carrying a second
signal electric potential different form the first signal electric
potential.
[0010] In one example, the method can include mounting and
electrically interconnecting a microelectronic element with the
substrate, the method electrically interconnecting the
microelectronic element with at least some of the wire bonds.
[0011] In one example, the substrate can be a circuit panel. In one
example, the substrate can be a lead frame and the method may
include mounting and electrically interconnecting a microelectronic
element with the lead frame, the microelectronic element can be
electrically interconnected therewith with at least some of the
wire bonds.
[0012] In one example, the substrate can be a first microelectronic
element. The method can include mounting and electrically
interconnecting a second microelectronic element with the first
microelectronic element. The method may include electrically
interconnecting the second microelectronic element with at least
some of the wire bonds through the first microelectronic
element.
[0013] In one example, the metal wire segment can be a first metal
wire segment. The method may include, after forming the upwardly
projecting portion, (i) feeding out a second metal wire segment
integral with the first metal wire segment, and (ii) moving the
face of the capillary over a third surface of the forming unit to
shape the second metal wire segment to have a second portion
projecting upwardly along the exterior wall of the capillary. In
one example, the second portion may be connected to the first
upwardly projecting portion by a third portion of the metal
wire.
[0014] In such example, an initial encapsulation layer can be
formed, and then at least a portion of the initial encapsulation
layer can be recessed to form the encapsulation layer and to define
the unencapsulated portions of the wire bonds. In one example, the
step of recessing includes laser ablating the initial encapsulation
layer. In one example, the step of recessing includes wet blasting
the initial encapsulation layer.
[0015] In one example, the method may include molding the
encapsulation layer with a temporary film between the encapsulant
and a plate of the mold. The wire bonds may extend into the
temporary film. The temporary film can be removed to expose the
unencapsulated portions of the wire bonds.
[0016] In one example, the method may include applying a portion of
a continuous sheet of the temporary film to the mold plate. The
method may then form the encapsulation layer in a cavity at least
partially defined by the mold plate. The current portion of the
temporary film may then be replaced with another portion of the
continuous sheet of the temporary film.
[0017] In one example, after forming the encapsulation layer, the
method may include forming second conductive elements contacting
the unencapsulated portions of the wire bonds.
[0018] In one example, the step of forming the second conductive
elements may include depositing an electrically conductive material
onto the unencapsulated portions of the wire bonds.
[0019] In one example, the step of forming the second conductive
elements may include plating a metal layer onto the unencapsulated
portions of the wire bonds.
[0020] In one example, the step of forming the second conductive
elements may include depositing electrically conductive paste onto
the unencapsulated portions of the wire bonds.
[0021] In one example, the step of depositing the electrically
conductive material may include at least one of dispensing,
stenciling, screen printing, or spraying the conductive material
onto the unencapsulated portions of the wire bonds.
[0022] In one example, an exterior wall of the capillary may be
substantially vertical. The step of moving the face of the
capillary over the second surface of the forming unit can be
performed such that the first portion of the metal wire segment is
between about 80.degree. and 90.degree. with respect to the second
portion.
[0023] In one example, two or more wire bonds can be formed on at
least one of the conductive elements.
[0024] In one example, the capillary may define an opening through
which the metal wire segment is fed and a front wall extending from
around the opening to an edge defined with the exterior wall. The
front face can define a raised portion adjacent the edge. During
the step (b) the raised portion can be pressed into the metal wire
at a location proximate to the first portion.
[0025] In one example, the encapsulation layer can be formed to
include a major surface and an alignment surface angled with
respect to the major surface. The at least one unencapsulated
portion of the wire bond can be positioned on the major surface and
the alignment surface intersecting the major surface at a location
in proximity to the unencapsulated portion. In such case, the
alignment surface can be configured to guide an electrically
conductive protrusion disposed above the alignment surface towards
the unencapsulated portion of the wire bond.
[0026] In one example, the encapsulation layer can be formed to
define a corner region thereof and to further include at least one
minor surface positioned within the corner region and being
positioned farther from the substrate than the major surface, the
alignment surface extending between the minor surface and the major
surface.
[0027] In one example, the major surface of the encapsulation layer
can be a first major surface that overlies the first region of the
substrate, the encapsulation layer being further formed to define a
second major surface overlying the second region and being
positioned closer to the substrate than the major surface. The
alignment surface can extend between the minor surface and the
major surface.
[0028] In one example, a ball bond can be formed to extend over the
second portion of the metal wire after bonding the second portion
to the conductive element.
[0029] A method according to an aspect of the invention can include
aligning a second microelectronic package with a first
microelectronic package made in accordance with the an aspect of
the invention herein. The second microelectronic package may
include a substrate defining a first surface with contact pads
exposed thereon and conductive masses joined with the contact pads.
The second microelectronic package can be aligned with the first
microelectronic package by moving at least one of the solder balls
into contact with both the alignment surface and at least the end
surface of at least one wire bond. The conductive masses can be
heated. reflowed or otherwise cured to join the conductive masses
with respective ones of the unencapsulated portions of the wire
bonds.
[0030] A method according to an aspect of the invention can include
positioning a first microelectronic package over a second
microelectronic package, the first microelectronic package
including a substrate having a first surface having terminals
exposed thereon, the terminals including joining elements
projecting away from the first surface.
[0031] The second microelectronic package may include a substrate
having a first region and a second region, the substrate having a
first surface and a second surface remote from the first surface.
At least one microelectronic element may overlie the first surface
within the first region. Electrically conductive elements can be
exposed at at least one of the first surface and the second surface
of the substrate within the second region, at least some of the
conductive elements being electrically connected to the at least
one microelectronic element. Wire bonds defining edge surfaces can
have bases bonded to respective ones of the conductive elements.
The bases can include first portions of the edge surfaces that
extend along the conductive elements with respective second
portions of the edge surfaces being at an angle between 25.degree.
and 90.degree. relative to the first portions. The wire bonds can
further have ends remote from the substrate and remote from the
bases. A dielectric encapsulation layer can extend from at least
one of the first or second surfaces and cover portions of the wire
bonds such that covered portions of the wire bonds are separated
from one another by the encapsulation layer, the encapsulation
layer overlying at least the second region of the substrate. The
unencapsulated portions of the wire bonds can be defined by
portions of the wire bonds that are uncovered by the encapsulation
layer. The unencapsulated portions can include the ends. The
joining elements can be heated, cured or reflowed, for example, to
join with the unencapsulated wire bond portions of the second
microelectronic package.
[0032] In one example, the method can further include a step of
forming an underfill filling a space defined between confronting
surfaces of the first microelectronic package and the second
microelectronic package and surrounding the conductive projections
between the terminals of the first microelectronic package and the
unencapsulated wire bond portions of the second microelectronic
package.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] FIG. 1 is sectional view depicting a microelectronic package
according to an embodiment of the invention.
[0034] FIG. 2 shows a top plan view of the microelectronic package
of FIG. 1.
[0035] FIG. 3 is a sectional view depicting a microelectronic
package according to a variation of the embodiment shown in FIG.
1.
[0036] FIG. 4 is a sectional view depicting a microelectronic
package according to a variation of the embodiment shown in FIG.
1.
[0037] FIG. 5A is a sectional view depicting a microelectronic
package according to a variation of the embodiment shown in FIG.
1.
[0038] FIG. 5B is a fragmentary sectional view depicting a
conductive element formed on an unencapsulated portion of a wire
bond according to an embodiment of the invention.
[0039] FIG. 5C is a fragmentary sectional view depicting a
conductive element formed on an unencapsulated portion of a wire
bond according to a variation of that shown in FIG. 5B.
[0040] FIG. 5D is a fragmentary sectional view depicting a
conductive element formed on an unencapsulated portion of a wire
bond according to a variation of that shown in FIG. 5B.
[0041] FIG. 6 is a sectional view illustrating a microelectronic
assembly including a microelectronic package according to one or
more of the foregoing embodiments and an additional microelectronic
package and a circuit panel electrically connected thereto.
[0042] FIG. 7 is a top elevation view illustrating a
microelectronic package according to an embodiment of the
invention.
[0043] FIG. 8 is a fragmentary top elevation view further
illustrating a microelectronic package according to an embodiment
of the invention.
[0044] FIG. 9 is a top elevation view illustrating a
microelectronic package including a lead frame type substrate
according to an embodiment of the invention.
[0045] FIG. 10 is a corresponding sectional view of the
microelectronic package shown in FIG. 9.
[0046] FIG. 11 is a sectional view of a microelectronic assembly
including a plurality of microelectronic packages electrically
connected together and reinforced with an underfill according to a
variation of the embodiment shown in FIG. 6.
[0047] FIG. 12 is a photographic image representing an assembly
having bonds between wire bonds of a first component and solder
masses of a second component attached thereto.
[0048] FIG. 13A is a fragmentary sectional view illustrating a wire
bond via in a microelectronic package according to an embodiment of
the invention.
[0049] FIG. 13B is a fragmentary sectional view illustrating a wire
bond via in a microelectronic package according to an embodiment of
the invention.
[0050] FIG. 13C is an enlarged fragmentary sectional view
illustrating a wire bond via in a microelectronic package according
to the embodiment shown in FIG. 13B.
[0051] FIG. 13D is a fragmentary sectional view illustrating a wire
bond via in a microelectronic package according to an embodiment of
the invention.
[0052] FIG. 13E is an enlarged fragmentary sectional view
illustrating a wire bond via in a microelectronic package according
to the embodiment shown in FIG. 13D.
[0053] FIG. 13F is a fragmentary sectional view illustrating a wire
bond via in a microelectronic package according to an embodiment of
the invention.
[0054] FIG. 14 illustrates stages in a method of forming a metal
wire segment prior to bonding the wire segment to a conductive
element according to an embodiment of the invention.
[0055] FIG. 15 further illustrates a method as depicted in FIG. 14
and a forming unit suitable for use in such method.
[0056] FIG. 16 is a top elevation view illustrating wire bonds
formed according to an embodiment of the invention.
[0057] FIG. 17 illustrates stages in a method of forming a metal
wire segment prior to bonding the wire segment to a conductive
element according to an embodiment of the invention.
[0058] FIGS. 18 and 19 are sectional views illustrating one stage
and another stage subsequent thereto in a method of forming an
encapsulation layer of a microelectronic package according to an
embodiment of the invention.
[0059] FIG. 20 is an enlarged sectional view further illustrating
the stage corresponding to FIG. 19.
[0060] FIG. 21 is a sectional view illustrating a stage of
fabricating an encapsulation layer of a microelectronic package
according to an embodiment of the invention.
[0061] FIG. 22 is a sectional view illustrating a stage of
fabricating an encapsulation layer of a microelectronic package
subsequent to the stage shown in FIG. 21.
[0062] FIGS. 23A and 23B are fragmentary sectional views
illustrating wire bonds according to another embodiment.
[0063] FIGS. 24A and 24B are sectional views of a microelectronic
package according to a further embodiment.
[0064] FIGS. 25A and 25B are sectional views of a microelectronic
package according to a further embodiment.
[0065] FIG. 26 shows a sectional view of a microelectronic package
according to another embodiment.
[0066] FIGS. 27A-C are sectional views showing examples of
embodiments of microelectronic packages according to further
embodiments.
[0067] FIGS. 28A-D show various embodiments of microelectronic
packages during steps of forming a microelectronic assembly
according to an embodiment of the disclosure.
[0068] FIG. 29 shows another embodiment of microelectronic packages
during steps of forming a microelectronic assembly according to an
embodiment of the disclosure.
[0069] FIGS. 30 A-C show embodiments of microelectronic packages
during steps of forming a microelectronic assembly according to
another embodiment of the disclosure.
[0070] FIGS. 31 A-C show embodiments of microelectronic packages
during steps of forming a microelectronic assembly according to
another embodiment of the disclosure.
[0071] FIGS. 32A and 32B show a portion of a machine that can be
used in forming various wire bond vias in various stages of a
method according to another embodiment of the present
disclosure.
[0072] FIG. 33 shows a portion of a machine that can be used in
forming various wire bond vias according in a method according to
another embodiment of the present disclosure.
[0073] FIGS. 34A-C show various forms of an instrument that can be
used in a method for making wire bonds according to an embodiment
of the present disclosure.
[0074] FIG. 35 shows a portion of a machine that can be used in
forming various wire bond vias according in a method according to
another embodiment of the present disclosure.
[0075] FIG. 36 shows a portion of a machine that can be used in
forming various wire bond vias according in a method according to
another embodiment of the present disclosure.
[0076] FIGS. 37 A-D show sectional views illustrating stages of
fabricating a microelectronic package according to an embodiment of
the present disclosure.
[0077] FIGS. 38A and 38B show sectional views illustrating stages
of fabricating a microelectronic package according to another
embodiment of the present disclosure.
[0078] FIGS. 39A-C show sectional views illustrating stages of
fabricating a microelectronic package according to another
embodiment of the present disclosure.
DETAILED DESCRIPTION
[0079] Turning now to the figures, where similar numeric references
are used to indicate similar features, there is shown in FIG. 1 a
microelectronic assembly 10 according to an embodiment of the
present invention. The embodiment of FIG. 1 is a microelectronic
assembly in the form of a packaged microelectronic element such as
a semiconductor chip assembly that is used in computer or other
electronic applications.
[0080] The microelectronic assembly 10 of FIG. 1 includes a
substrate 12 having a first surface 14 and a second surface 16. The
substrate 12 typically is in the form of a dielectric element,
which is substantially flat. The dielectric element may be
sheet-like and may be thin. In particular embodiments, the
dielectric element can include one or more layers of organic
dielectric material or composite dielectric materials, such as,
without limitation: polyimide, polytetrafluoroethylene ("PTFE"),
epoxy, epoxy-glass, FR-4, BT resin, thermoplastic, or thermoset
plastic materials. The substrate may be a substrate of a package
having terminals for further electrical interconnection with a
circuit panel, e.g., a circuit board. Alternatively, the substrate
can be a circuit panel or circuit board. In one example thereof,
the substrate can be a module board of a dual-inline memory module
("DIMM"). In yet another variation, the substrate can be a
microelectronic element such as may be or include a semiconductor
chip embodying a plurality of active devices, e.g., in form of an
integrated circuit or otherwise.
[0081] The first surface 14 and second surface 16 are preferably
substantially parallel to each other and are spaced apart at a
distance perpendicular to the surfaces 14,16 defining the thickness
of the substrate 12. The thickness of substrate 12 is preferably
within a range of generally acceptable thicknesses for the present
application. In an embodiment, the distance between the first
surface 14 and the second surface 16 is between about 25 and 500
.mu.m. For purposes of this discussion, the first surface 14 may be
described as being positioned opposite or remote from second
surface 16. Such a description, as well as any other description of
the relative position of elements used herein that refers to a
vertical or horizontal position of such elements is made for
illustrative purposes only to correspond with the position of the
elements within the Figures, and is not limiting.
[0082] In a preferred embodiment, substrate 12 is considered as
divided into a first region 18 and a second region 20. The first
region 18 lies within the second region 20 and includes a central
portion of the substrate 12 and extends outwardly therefrom. The
second region 20 substantially surrounds the first region 18 and
extends outwardly therefrom to the outer edges of the substrate 12.
In this embodiment, no specific characteristic of the substrate
itself physically divides the two regions; however, the regions are
demarked for purposes of discussion herein with respect to
treatments or features applied thereto or contained therein.
[0083] A microelectronic element 22 can be mounted to first surface
14 of substrate 12 within first region 18. Microelectronic element
22 can be a semiconductor chip or another comparable device. In the
embodiment of FIG. 1, microelectronic element 22 is mounted to
first surface 14 in what is known as a conventional or "face-up"
fashion. In such an embodiment, wire leads 24 can be used to
electrically connect microelectronic element 22 to some of a
plurality of conductive elements 28 exposed at first surface 14.
Wire leads 24 can also be joined to traces (not shown) or other
conductive features within substrate 12 that are, in turn,
connected to conductive elements 28.
[0084] Conductive elements 28 include respective "contacts" or pads
30 that are exposed at the first surface 14 of substrate 12. As
used in the present description, when an electrically conductive
element is described as being "exposed at" the surface of another
element having dielectric structure, it indicates that the
electrically conductive structure is available for contact with a
theoretical point moving in a direction perpendicular to the
surface of the dielectric structure toward the surface of the
dielectric structure from outside the dielectric structure. Thus, a
terminal or other conductive structure that is exposed at a surface
of a dielectric structure may project from such surface; may be
flush with such surface; or may be recessed relative to such
surface and exposed through a hole or depression in the dielectric.
The conductive elements 28 can be flat, thin elements in which pad
30 is exposed at first surface 14 of substrate 12. In one
embodiment, conductive elements 28 can be substantially circular
and can be interconnected between each other or to microelectronic
element 22 by traces (not shown). Conductive elements 28 can be
formed at least within second region 20 of substrate 12.
Additionally, in certain embodiments, conductive elements 28 can
also be formed within first region 18. Such an arrangement is
particularly useful when mounting microelectronic element 122 (FIG.
3) to substrate 112 in what is known as a "flip-chip"
configuration, where contacts on the microelectronic element 122
can be connected to conductive elements 128 within first region 118
by solder bumps 126 or the like that are positioned beneath
microelectronic element 122. In an embodiment, conductive elements
28 are formed from a solid metal material such as copper, gold,
nickel, or other materials that are acceptable for such an
application, including various alloys including one or more of
copper, gold, nickel or combinations thereof.
[0085] At least some of conductive elements 28 can be
interconnected to corresponding second conductive elements 40, such
as conductive pads, exposed at second surface 16 of substrate 12.
Such an interconnection can be completed using vias 41 formed in
substrate 12 that can be lined or filled with conductive metal that
can be of the same material as conductive elements 28 and 40.
Optionally, conductive elements 40 can be further interconnected by
traces on substrate 12.
[0086] Microelectronic assembly 10 further includes a plurality of
wire bonds 32 joined to at least some of the conductive elements
28, such as on the pads 30 thereof. Wire bonds 32 are bonded along
a portion of the edge surface 37 thereof to the conductive elements
28. Examples of such bonding include stitch bonding, wedge bonding
and the like. As will be described in further detail below, a wire
bonding tool can be used to stitch-bond a segment of wire extending
from a capillary of the wire bonding tool to a conductive element
28 while severing the stitch-bonded end of the wire from a supply
of wire in the capillary. The wire bonds are stitch-bonded to the
conductive elements 28 at their respective "bases" 34. Hereinafter,
the "base" 34 of such stitch-bonded wire bond 32 refers to the
portion of the wire bond which forms a joint with the conductive
element 28. Alternatively, wire bonds can be joined to at least
some of the conductive elements using ball bonds, examples of which
are shown and described in co-pending, commonly assigned U.S.
patent application, the entire disclosure of which is incorporated
by reference herein.
[0087] The incorporation of various forms of edge bonds, as
described herein, can allow for conductive elements 28 to be
non-solder-mask-defined ("NSMD") type conductive elements. In
packages using other types of connections to conductive elements,
for example solder balls or the like, the conductive elements are
solder-mask defined. That is the conductive elements are exposed in
openings formed in a solder mask material layer. In such an
arrangement, the solder mask layer can partially overlie the
conductive elements or can contact the conductive elements along an
edge thereof. By contrast, a NSMD conductive element is one that is
not contacted by a solder mask layer. For example, the conductive
element can be exposed on a surface of a substrate that does not
have a solder mask layer or, if present, a solder mask layer on the
surface can have an opening with edges spaced away from the
conductive element. Such NSMD conductive elements can also be
formed in shapes that are not round. Solder-mask defined pads can
often be round when intended to be used to bond to an element via a
solder mass, which forms a generally round profile on such a
surface. When using, for example, an edge bond to attach to a
conductive element, the bond profile itself is not round, which can
allow for a non-round conductive element. Such non-round conductive
elements can be, for example oval, rectangular, or of a rectangular
shape with rounded corners. They can further be configured to be
longer in the direction of the edge bond to accommodate the bond,
while being shorter in the direction of the wire bond's 32 width.
This can allow for a finer pitch at the substrate 12 level. In one
example, the conductive elements can be between about 10% and 25%
larger than the intended size of base 34 in both directions. This
can allow for variations in the precision with which the bases 34
are located and for variations in the bonding process.
[0088] In some embodiments, an edge bonded wire bond, as described
above, which can be in the form of a stitch bond, can be combined
with a ball bond. As shown in FIG. 23A a ball bond 1333 can be
formed on a conductive element 1328 and a wire bond 1332 can be
formed with a base 1338 stitch bonded along a portion of the edge
surface 1337 to ball bond 1372. In another example, the general
size and placement of the ball bond can be as shown at 1372'. In
another variation shown in FIG. 23B, a wire bond 1332 can be edge
bonded along conductive element 1328, such as by stitch bonding, as
described above. A ball bond 1373 can then be formed on top of the
base 1338 of wire bond 1334. In one example, the size and placement
of the ball bond can be as shown at 1373'. Each of the wire bonds
32 can extend to a free end 36 remote from the base 34 of such wire
bond and remote from substrate 12. The ends 36 of wire bonds 32 are
characterized as being free in that they are not electrically
connected or otherwise joined to microelectronic element 22 or any
other conductive features within microelectronic assembly 10 that
are, in turn, connected to microelectronic element 22. In other
words, free ends 36 are available for electronic connection, either
directly or indirectly as through a solder ball or other features
discussed herein, to a conductive feature external to assembly 10.
The fact that ends 36 are held in a predetermined position by, for
example, encapsulation layer 42 or otherwise joined or electrically
connected to another conductive feature does not mean that they are
not "free" as described herein, so long as any such feature is not
electrically connected to microelectronic element 22. Conversely,
base 34 is not free as it is either directly or indirectly
electrically connected to microelectronic element 22, as described
herein. As shown in FIG. 1, the bases 34 of the wire bonds 32
typically are curved at their stitch-bond (or other edge-bonded)
joints with the respective conductive elements 28. Each wire bond
has an edge surface 37 extending between the base 34 thereof and
the end 36 of such wire bond. The particular size and shape of base
34 can vary according to the type of material used to form wire
bond 32, the desired strength of the connection between wire bond
32 and conductive element 28, or the particular process used to
form wire bond 32. Alternative embodiments are possible where wire
bonds 32 are additionally or alternatively joined to conductive
elements 40 exposed on second surface 16 of substrate 12, extending
away therefrom.
[0089] In a particular example, a first one of the wire bonds 32
may be adapted, i.e., constructed, arranged, or electrically
coupled to other circuitry on the substrate for carrying a first
signal electric potential, and a second one of the wire bonds 32
may be so adapted for simultaneously carrying a second signal
electric potential different from the first signal electric
potential. Thus, when a microelectronic package as seen in FIGS. 1
and 2 is energized, the first and second wire bonds can
simultaneously carry first and second different signal electric
potentials.
[0090] Wire bond 32 can be made from a conductive material such as
copper, copper alloy or gold. Additionally, wire bonds 32 can be
made from combinations of materials, such as from a core of a
conductive material, such as copper or aluminum, for example, with
a coating applied over the core. The coating can be of a second
conductive material, such as aluminum, nickel or the like.
Alternatively, the coating can be of an insulating material, such
as an insulating jacket.
[0091] In particular embodiments, the wire bonds may have a core of
primary metal and a metallic finish including a second metal
different from the primary metal overlying the primary metal. For
example, the wire bonds may have a primary metal core of copper,
copper alloy or gold and the metallic finish can include palladium.
Palladium can avoid oxidation of a core metal such as copper, and
may serve as a diffusion barrier to avoid diffusion a
solder-soluble metal such as gold in solder joints between
unencapsulated portions 39 of the wire bonds and another component
as will be described further below. Thus, in one embodiment, the
wire bonds can be formed of palladium-coated copper wire or
palladium-coated gold wire which can be fed through the capillary
of the wire bonding tool.
[0092] In an embodiment, the wire used to form wire bonds 32 can
have a thickness, i.e., in a dimension transverse to the wire's
length, of between about 15 .mu.m and 150 .mu.m. In general, a wire
bond is formed on a conductive element, such as conductive element
28, a pad, trace or the like, using specialized equipment that is
known in the art. The free end 36 of wire bond 32 has an end
surface 38. End surface 38 can form at least a part of a contact in
an array formed by respective end surfaces 38 of a plurality of
wire bonds 32. FIG. 2 shows an exemplary pattern for such an array
of contacts formed by end surfaces 38. Such an array can be formed
in an area array configuration, variations of which could be
implemented using the structures described herein. Such an array
can be used to electrically and mechanically connect the
microelectronic assembly 10 to another microelectronic structure,
such as to a printed circuit board ("PCB"), or to other packaged
microelectronic elements, an example of which is shown in FIG. 6.
In such a stacked arrangement, wire bonds 32 and conductive
elements 28 and 40 can carry multiple electronic signals
therethrough, each having a different signal potential to allow for
different signals to be processed by different microelectronic
elements in a single stack. Solder masses 52 can be used to
interconnect the microelectronic assemblies in such a stack, such
as by electronically and mechanically attaching end surfaces 38 to
conductive elements 40.
[0093] Microelectronic assembly 10 further includes an
encapsulation layer 42 formed from a dielectric material. In the
embodiment of FIG. 1, encapsulation layer 42 is formed over the
portions of first surface 14 of substrate 12 that are not otherwise
covered by or occupied by microelectronic element 22, or conductive
elements 28. Similarly, encapsulation layer 42 is formed over the
portions of conductive elements 28, including pad 30 thereof, that
are not otherwise covered by wire bonds 32. Encapsulation layer 42
can also substantially cover microelectronic element 22, wire bonds
32, including the bases and at least a portion of edge surfaces 37
thereof. A portion of wire bonds 32 can remain uncovered by
encapsulation layer 42, which can also be referred to as
unencapsulated portions 39, thereby making the wire bond available
for electrical connection to a feature or element located outside
of encapsulation layer 42. In an embodiment, end surfaces 38 of
wire bonds 32 remain uncovered by encapsulation layer 42 within
major surface 44 of encapsulation layer 42. Other embodiments are
possible in which a portion of edge surface 37 is uncovered by
encapsulation layer 42 in addition to or as an alternative to
having end surface 38 remain uncovered by encapsulation layer 42.
In other words, encapsulation layer 42 can cover all of
microelectronic assembly 10 from first surface 14 and above, with
the exception of a portion of wire bonds 36, such as end surfaces
38, edge surfaces 37 or combinations of the two. In the embodiments
shown in the Figures, a surface, such as major surface 44 of
encapsulation layer 42 can be spaced apart from first surface 14 of
substrate 12 at a distance great enough to cover microelectronic
element 22. Accordingly, embodiments of microelectronic assembly 10
in which ends 38 of wire bonds 32 are flush with surface 44, will
include wire bonds 32 that are taller than the microelectronic
element 22, and any underlying solder bumps for flip chip
connection. Other configurations for encapsulation layer 42,
however, are possible. For example, the encapsulation layer can
have multiple surfaces with varying heights. In such a
configuration, the surface 44 within which ends 38 are positioned
can be higher or lower than an upwardly facing surface under which
microelectronic element 22 is located.
[0094] Encapsulation layer 42 serves to protect the other elements
within microelectronic assembly 10, particularly wire bonds 32.
This allows for a more robust structure that is less likely to be
damaged by testing thereof or during transportation or assembly to
other microelectronic structures. Encapsulation layer 42 can be
formed from a dielectric material with insulating properties such
as that described in U.S. Patent App. Pub. No. 2010/0232129, which
is incorporated by reference herein.
[0095] FIG. 3 shows an embodiment of microelectronic assembly 110
having wire bonds 132 with ends 136 that are not positioned
directly above the respective bases 34 thereof. That is,
considering first surface 114 of substrate 112 as extending in two
lateral directions, so as to substantially define a plane, end 136
or at least one of the wire bonds 132 is displaced in at least one
of these lateral directions from a corresponding lateral position
of base 134. As shown in FIG. 3, wire bonds 132 can be
substantially straight along the longitudinal axis thereof, as in
the embodiment of FIG. 1, with the longitudinal axis being angled
at an angle 146 with respect to first surface 114 of substrate 112.
Although the cross-sectional view of FIG. 3 only shows the angle
146 through a first plane perpendicular to first surface 114, wire
bond 132 can also be angled with respect to first surface 114 in
another plane perpendicular to both that first plane and to first
surface 114. Such an angle can be substantially equal to or
different than angle 146. That is the displacement of end 136
relative to base 134 can be in two lateral directions and can be by
the same or a different distance in each of those directions.
[0096] In an embodiment, various ones of wire bonds 132 can be
displaced in different directions and by different amounts
throughout the assembly 110. Such an arrangement allows for
assembly 110 to have an array that is configured differently on the
level of surface 144 compared to on the level of substrate 12. For
example, an array can cover a smaller overall area or have a
smaller pitch on surface 144 compared to that at first surface 114
of substrate 112. Further, some wire bonds 132 can have ends 138
that are positioned above microelectronic element 122 to
accommodate a stacked arrangement of packaged microelectronic
elements of different sizes. In another example, wire bonds 132 can
be configured such that the end of one wire bond is positioned
substantially above the base of a second wire bond, wherein the end
of that second wire bond being positioned elsewhere. Such an
arrangement can be referred to as changing the relative position of
a contact end surface 136 within an array of contacts, compared to
the position of a corresponding contact array on second surface
116. In another example, shown in FIG. 8, wire bonds 132 can be
configured such that the end 136A of one wire bond 132A is
positioned substantially above the base 134B of another wire bond
134B, the end 132B of that wire bond 134B being positioned
elsewhere. Such an arrangement can be referred to as changing the
relative position of a contact end surface 136 within an array of
contacts, compared to the position of a corresponding contact array
on second surface 116. Within such an array, the relative positions
of the contact end surfaces can be changed or varied, as desired,
depending on the microelectronic assembly's application or other
requirements. FIG. 4 shows a further embodiment of a
microelectronic subassembly 210 having wire bonds 232 with ends 236
in displaced lateral positions with respect to bases 234. In the
embodiment of FIG. 4, the wire bonds 132 achieve this lateral
displacement by including a curved portion 248 therein. Curved
portion 248 can be formed in an additional step during the wire
bond formation process and can occur, for example, while the wire
portion is being drawn out to the desired length. This step can be
carried out using available wire-bonding equipment, which can
include the use of a single machine.
[0097] Curved portion 248 can take on a variety of shapes, as
needed, to achieve the desired positions of the ends 236 of the
wire bonds 232. For example, curved portions 248 can be formed as
S-curves of various shapes, such as that which is shown in FIG. 4
or of a smoother form (such as that which is shown in FIG. 5).
Additionally, curved portion 248 can be positioned closer to base
234 than to end 236 or vice-versa. Curved portion 248 can also be
in the form of a spiral or loop, or can be compound including
curves in multiple directions or of different shapes or
characters.
[0098] In a further example shown in FIG. 26, the wire bonds 132
can be arranged such that the bases 134 are arranged in a first
pattern having a pitch thereof. The wire bonds 132 can be
configured such that the unencapsulated portions thereof 139
including end surfaces 138, can be disposed at positions in a
pattern having a minimum pitch between adjacent unencapsulated
portions 38 of the wire bonds 32 exposed at the surface 44 of the
encapsulation layer that is greater than the minimum pitch between
adjacent bases of the plurality of bases 134 and, accordingly, the
conductive elements 128 to which the bases are joined). To achieve
this, the wire bonds can include portions which extend in one or
more angles relative to a normal direction to the conductive
elements, such as shown in FIG. 26. In another example, the wire
bonds can be curved as shown, for example in FIG. 4, such that the
ends 238 are displaced in one or more lateral directions from the
bases 134, as discussed above. As further shown in FIG. 26, the
conductive elements 128 and the ends 138 can be arranged in
respective rows or columns and the lateral displacement of end
surfaces 138 at some locations, such as in one row of the ends,
from the respective conductive elements on the substrate to which
they are joined can be greater than the lateral displacement of the
unencapsulated portions at other locations from the respective
conductive elements to which they are connected. To achieve this,
the wire bonds 132 can, for example be at different angles 146A,
146B with respect to the surface 116 of the substrate 112.
[0099] FIG. 5A shows a further exemplary embodiment of a
microelectronic package 310 having a combination of wire bonds 332
having various shapes leading to various relative lateral
displacements between bases 334 and ends 336. Some of wire bonds
332A are substantially straight with ends 336A positioned above
their respective bases 334A, while other wire bonds 332B include a
subtle curved portion 348B leading to a somewhat slight relative
lateral displacement between end 336B and base 334B. Further, some
wire bonds 332C include curved portions 348C having a sweeping
shape that result in ends 336C that are laterally displaced from
the relative bases 334C at a greater distance than that of ends
334B. FIG. 5 also shows an exemplary pair of such wire bonds 332Ci
and 332Cii that have bases 334Ci and 334Cii positioned in the same
row of a substrate-level array and ends 336Ci and 336Cii that are
positioned in different rows of a corresponding surface-level
array. In some cases, the radius of bends in the wire bonds 332Ci,
332Cii can be large such that the curves in the wire bonds may
appear continuous. In other cases, the radius of the bends may be
relatively small, and the wire bonds may even have straight
portions or relatively straight portions between bends in the wire
bonds. Moreover, in some cases the unencapsulated portions of the
wire bonds can be displaced from their bases by at least one
minimum pitch between the contacts 328 of the substrate. In other
cases, the unencapsulated portions of the wire bonds can be
displaced from their bases by at least 200 microns.
[0100] A further variation of a wire bond 332D is shown that is
configured to be uncovered by encapsulation layer 342 on a side
surface 47 thereof. In the embodiment shown free end 336D is
uncovered, however, a portion of edge surface 337D can additionally
or alternatively be uncovered by encapsulation layer 342. Such a
configuration can be used for grounding of microelectronic assembly
10 by electrical connection to an appropriate feature or for
mechanical or electrical connection to other featured disposed
laterally to microelectronic assembly 310. Additionally, FIG. 5
shows an area of encapsulation layer 342 that has been etched away,
molded, or otherwise formed to define a recessed surface 345 that
is positioned closer to substrate 12 than major surface 342. One or
more wire bonds, such as wire bond 332A can be uncovered within an
area along recessed surface 345. In the exemplary embodiment shown
in FIG. 5, end surface 338A and a portion of edge surface 337A are
uncovered by encapsulation layer 342. Such a configuration can
provide a connection, such as by a solder ball or the like, to
another conductive element by allowing the solder to wick along
edge surface 337A and join thereto in addition to joining to end
surface 338. Other configurations by which a portion of a wire bond
can be uncovered by encapsulation layer 342 along recessed surface
345 are possible, including ones in which the end surfaces are
substantially flush with recessed surface 345 or other
configurations shown herein with respect to any other surfaces of
encapsulation layer 342. Similarly, other configurations by which a
portion of wire bond 332D is uncovered by encapsulation layer 342
alongside surface 347 can be similar to those discussed elsewhere
herein with respect to the variations of the major surface of the
encapsulation layer.
[0101] FIG. 5A further shows a microelectronic assembly 310 having
two microelectronic elements 322 and 350 in an exemplary
arrangement where microelectronic element 350 is stacked, face-up,
on microelectronic element 322. In this arrangement, leads 324 are
used to electrically connect microelectronic element 322 to
conductive features on substrate 312. Various leads are used to
electronically connect microelectronic element 350 to various other
features of microelectronic assembly 310. For example, lead 380
electrically connects microelectronic element 350 to conductive
features of substrate 312, and lead 382 electrically connects
microelectronic element 350 to microelectronic element 322.
Further, wire bond 384, which can be similar in structure to
various ones of wire bonds 332, is used to form a contact surface
386 on the surface 344 of encapsulation layer 342 that electrically
connected to microelectronic element 350. This can be used to
directly electrically connect a feature of another microelectronic
assembly to microelectronic element 350 from above encapsulation
layer 342. Such a lead could also be included that is connected to
microelectronic element 322, including when such a microelectronic
element is present without a second microelectronic element 350
affixed thereon. An opening (not shown) can be formed in
encapsulation layer 342 that extends from surface 344 thereof to a
point along, for example, lead 380, thereby providing access to
lead 380 for electrical connection thereto by an element located
outside surface 344. A similar opening can be formed over any of
the other leads or wire bonds 332, such as over wire bonds 332C at
a point away from the ends 336C thereof. In such an embodiment,
ends 336C can be positioned beneath surface 344, with the opening
providing the only access for electrical connection thereto.
[0102] Additional arrangements for microelectronic packages having
multiple microelectronic elements are shown in FIGS. 27A-C. These
arrangements can be used in connection with the wire bond
arrangements shown, for example in FIG. 5A and in the stacked
package arrangement of FIG. 6, discussed further below.
Specifically, FIG. 27A shows an arrangement in which a lower
microelectronic element 1622 is flip-chip bonded to conductive
elements 1628 on the surface 1614 of substrate 1612. The second
microelectronic element 1650 can overlie the first microelectronic
element 1622 and be face-up connected to additional conductive
elements 1628 on the substrate, such as through wire bonds 1688.
FIG. 27B shows an arrangement where a first microelectronic element
1722 is face-up mounted on surface 1714 and connected through wire
bonds 1788 to conductive elements 1728. Second microelectronic
element 1750 can have contacts exposed at a face thereof which face
and are joined to corresponding contacts at a face of the first
microelectronic element 1722 which faces away from the substrate.
through a set of contacts 1726 of the second microelectronic
element 1750 which face and are joined to corresponding contacts on
the front face of the first microelectronic element 1722. These
contacts of the first microelectronic element 1722 which are joined
to corresponding contacts of the second microelectronic element can
in turn be connected through circuit patterns of the first
microelectronic element 1722 and be connected by ire bonds 1788 to
the conductive elements 1728 on substrate 1712.
[0103] FIG. 27C shows an example in which first and second
microelectronic elements 1822, 1850 are spaced apart from one
another in a direction along a surface 1814 of substrate 1812.
Either one or both of the microelectronic elements (and additional
microelectronic elements) can be mounted in face-up or flip-chip
configurations described herein. Further, any of the
microelectronic elements employed in such an arrangement can be
connected to each other through circuit patterns on one or both
such microelectronic elements or on the substrate or on both, which
electrically connect respective conductive elements 1828 to which
the microelectronic elements are electrically connected.
[0104] FIG. 5B further illustrates a structure according to a
variation of the above-described embodiments in which a second
conductive element 43 can be formed in contact with an
unencapsulated portion 39 of a wire bond exposed at or projecting
above a surface 44 of the encapsulation layer 42, the second
conductive element not contacting the first conductive element 28
(FIG. 1). In one embodiment as seen in FIG. 5B, the second
conductive element can include a pad 45 extending onto a surface 44
of the encapsulation layer which can provide a surface for joining
with a bonding metal or bonding material of a component
thereto.
[0105] Alternatively, as seen in FIG. 5C, the second conductive
element 48 can be a metallic finish selectively formed on the
unencapsulated portion 39 of a wire bond. In either case, in one
example, the second conductive element 43 or can be formed, such as
by plating, of a layer of nickel contacting the unencapsulated
portion of the wire bond and overlying a core of the wire bond, and
a layer of gold or silver overlying the layer of nickel. In another
example, the second conductive element may be a monolithic metal
layer consisting essentially of a single metal. In one example, the
single metal layer can be nickel, gold, copper, palladium or
silver. In another example, the second conductive element 43 or 48
can include or be formed of a conductive paste contacting the
unencapsulated portion 39 of the wire bond. For example,
stenciling, dispensing, screen printing, controlled spraying, e.g.,
a process similar to inkjet printing, or transfer molding can be
used to form second conductive elements 43 or 48 on the
unencapsulated portions 39 of the wire bonds.
[0106] FIG. 5D further illustrates a second conductive element 43D
which can be formed of a metal or other electrically conductive
material as described for conductive elements 43, 48 above, wherein
the second conductive element 43D is formed at least partly within
an opening 49 extending into an exterior surface 44 of the
encapsulation layer 42. In one example, the opening 49 can be
formed by removing a portion of the encapsulation layer after
curing or partially curing the encapsulation layer so as to
simultaneously expose a portion of the wire bond thereunder which
then becomes the unencapsulated portion of the wire bond. For
example, the opening 49 can be formed by laser ablation, etching.
In another example, a soluble material can be pre-placed at the
location of the opening prior to forming the encapsulation layer
and the pre-placed material then can be removed after forming the
encapsulation layer to form the opening.
[0107] In a further example, as seen in FIGS. 24A-24B, multiple
wire bonds 1432 can have bases joined with a single conductive
element 1428. Such a group of wire bonds 1432 can be used to make
additional connection points over the encapsulation layer 1442 for
electrical connection with conductive element 1428. The exposed
portions 1439 of the commonly-joined wire bonds 1432 can be grouped
together on surface 1444 of encapsulation layer 1442 in an area,
for example about the size of conductive element 1428 itself or
another area approximating the intended size of a bonding mass for
making an external connection with the wire bond 1432 group. As
shown, such wire bonds 1432 can be either ball-bonded (FIG. 24A) or
edge bonded (FIG. 24B) on conductive element 1428, as described
above, or can be bonded to the conductive element as described
above with respect to FIGS. 23A or 23B or both.
[0108] As shown in FIGS. 25A and 25B, ball-bonded wire bonds 1532
can be formed as stud bumps on at least some of the conductive
elements 1528. As described herein a stud bump is a ball-bonded
wire bond where the segment of wire extending between the base 1534
and the end surface 1538 has a length of at most 300% of the
diameter of the ball-bonded base 1534. As in other embodiments, the
end surface 1538 and optionally a portion of the edge surface 1537
of the stud bump can be unencapsulated by the encapsulation layer
1542. As shown in FIG. 25B such a stud bump 1532A can be formed on
top of another stud bump 1532B to form, essentially, a base 1534 of
a wire bond 1532 made up of the two ball bonds with a wire segment
extending therefrom up to the surface 1544 of the encapsulation
layer 1542. Such wire bonds 1532 can have a height that is less
than, for example, the wire bonds described elsewhere in the
present disclosure. Accordingly, the encapsulation layer can
include a major surface 1544 in an area, for example overlying the
microelectronic element 1522 and a minor surface 1545 spaced above
the surface 1514 of the substrate 1512 at a height less than that
of the major surface 1544. Such arrangements can also be used to
form alignment features and to reduce the overall height of a
package employing stud bump type wire bonds as well as other types
of wire bonds disclosed herein, while accommodating conductive
masses 1552 that can connect the unencapsulated portions 1539 of
the wire bonds 1532 with contacts 1543 on another microelectronic
package 1588.
[0109] FIG. 6 shows a stacked package of microelectronic assemblies
410 and 488. In such an arrangement solder masses 452 electrically
and mechanically connect end surfaces 438 of assembly 410 to
conductive elements 440 of assembly 488. The stacked package can
include additional assemblies and can be ultimately attached to
contacts 492 on a PCB 490 or the like for use in an electronic
device. In such a stacked arrangement, wire bonds 432 and
conductive elements 430 can carry multiple electronic signals
therethrough, each having a different signal potential to allow for
different signals to be processed by different microelectronic
elements, such as microelectronic element 422 or microelectronic
element 489, in a single stack.
[0110] In the exemplary configuration in FIG. 6, wire bonds 432 are
configured with a curved portion 448 such that at least some of the
ends 436 of the wire bonds 432 extend into an area that overlies a
major surface 424 of the microelectronic element 422. Such an area
can be defined by the outer periphery of microelectronic element
422 and extending upwardly therefrom. An example of such a
configuration is shown from a view facing toward first surface 414
of substrate 412 in FIG. 18, where wire bonds 432 overlie a rear
major surface of the microelectronic element 422, which is
flip-chip bonded at a front face 425 thereof to substrate 412. In
another configuration (FIG. 5), the microelectronic element 422 can
be mounted face-up to the substrate 312, with the front face 325
facing away from the substrate 312 and at least one wire bond 336
overlying the front face of microelectronic element 322. In one
embodiment, such wire bond 336 is not electrically connected with
microelectronic element 322. A wire bond 336 bonded to substrate
312 may also overlie the front or rear face of microelectronic
element 350. The embodiment of microelectronic assembly 410 shown
in FIG. 7 is such that conductive elements 428 are arranged in a
pattern forming a first array in which the conductive elements 428
are arranged in rows and columns surrounding microelectronic
element 422 and may have a predetermined pitch between individual
conductive elements 428. Wire bonds 432 are joined to the
conductive elements 428 such that the respective bases 434 thereof
follow the pattern of the first array as set out by the conductive
elements 428. Wire bonds 432 are configured, however, such that the
respective ends 436 thereof can be arranged in a different pattern
according to a second array configuration. In the embodiment shown
the pitch of the second array can be different from, and in some
cases finer than that of the first array. However, other
embodiments are possible in which the pitch of the second array is
greater than the first array, or in which the conductive elements
428 are not positioned in a predetermined array but the ends 436 of
the wire bonds 432 are. Further still, conductive elements 428 can
be configured in sets of arrays positioned throughout substrate 412
and wire bonds 432 can be configured such that ends 436 are in
different sets of arrays or in a single array.
[0111] FIG. 6 further shows an insulating layer 421 extending along
a surface of microelectronic element 422. Insulating layer 421 can
be formed from a dielectric or other electrically insulating
material prior to forming the wire bonds. The insulating layer 421
can protect microelectronic element from coming into contact with
any of wire bonds 423 that extend thereover. In particular,
insulating layer 421 can avoid electrical short-circuiting between
wire bonds and short-circuiting between a wire bond and the
microelectronic element 422. In this way, the insulating layer 421
can help avoid malfunction or possible damage due to unintended
electrical contact between a wire bond 432 and the microelectronic
element 422.
[0112] The wire bond configuration shown in FIGS. 6 and 7 can allow
for microelectronic assembly 410 to connect to another
microelectronic assembly, such as microelectronic assembly 488, in
certain instances where the relative sizes of, for example,
microelectronic assembly 488 and microelectronic element 422 would
not otherwise permit. In the embodiment of FIG. 6 microelectronic
assembly 488 is sized such that some of the contact pads 440 are in
an array within an area smaller than the area of the front or rear
surface 424 or 426 of the microelectronic element 422. In a
microelectronic assembly having substantially vertical conductive
features, such as pillars, in place of wire bonds 432, direct
connection between conductive elements 428 and pads 440 would not
be possible. However, as shown in FIG. 6, wire bonds 432 having
appropriately-configured curved portions 448 can have ends 436 in
the appropriate positions to make the necessary electronic
connections between microelectronic assembly 410 and
microelectronic assembly 488. Such an arrangement can be used to
make a stacked package where microelectronic assembly 418 is, for
example, a DRAM chip or the like having a predetermined pad array,
and wherein microelectronic element 422 is a logic chip configured
to control the DRAM chip. This can allow a single type of DRAM chip
to be used with several different logic chips of varying sizes,
including those which are larger than the DRAM chip because the
wire bonds 432 can have ends 436 positioned wherever necessary to
make the desired connections with the DRAM chip. In an alternative
embodiment, microelectronic package 410 can be mounted on printed
circuit board 490 in another configuration, where the
unencapsulated surfaces 436 of wire bonds 432 are electrically
connected to pads 492 of circuit board 490. Further, in such an
embodiment, another microelectronic package, such as a modified
version of package 488 can be mounted on package 410 by solder
balls 452 joined to pads 440.
[0113] FIGS. 9 and 10 show a further embodiment of a
microelectronic assembly 510 in which wire bonds 532 are formed on
a lead-frame structure. Examples of lead frame structures are shown
and described in U.S. Pat. Nos. 7,176,506 and 6,765,287 the
disclosures of which are hereby incorporated by reference herein.
In general, a lead frame is a structure formed from a sheet of
conductive metal, such as copper, that is patterned into segments
including a plurality of leads and can further include a paddle,
and a frame. The frame is used to secure the leads and the paddle,
if used, during fabrication of the assembly. In an embodiment, a
microelectronic element, such as a die or chip, can be joined
face-up to the paddle and electrically connected to the leads using
wire bonds. Alternatively, the microelectronic element can be
mounted directly onto the leads, which can extend under the
microelectronic element. In such an embodiment, contacts on the
microelectronic element can be electrically connected to respective
leads by solder balls or the like. The leads can then be used to
form electrical connections to various other conductive structures
for carrying an electronic signal potential to and from the
microelectronic element. When the assembly of the structure is
complete, which can include forming an encapsulation layer
thereover, temporary elements of the frame can be removed from the
leads and paddle of the lead frame, so as to form individual leads.
For purposes of this disclosure, the individual leads 513 and the
paddle 515 are considered to be segmented portions of what,
collectively, forms a substrate 512 that includes conductive
elements 528 in portions that are integrally formed therewith.
Further, in this embodiment, paddle 515 is considered to be within
first region 518 of substrate 512, and leads 513 are considered to
be within second region 520. Wire bonds 524, which are also shown
in the elevation view of FIG. 10, connect microelectronic element
22, which is carried on paddle 515, to conductive elements 528 of
leads 515. Wire bonds 532 can be further joined at bases 534
thereof to additional conductive elements 528 on leads 515.
Encapsulation layer 542 is formed onto assembly 510 leaving ends
538 of wire bonds 532 uncovered at locations within surface 544.
Wire bonds 532 can have additional or alternative portions thereof
uncovered by encapsulation layer 542 in structures that correspond
to those described with respect to the other embodiments
herein.
[0114] FIG. 11 further illustrates use of an underfill 620 for
mechanically reinforcing the joints between wire bonds 632 of one
package 610A and solder masses 652 of another package 610B mounted
thereon. As shown in FIG. 11, although the underfill 620 need only
be disposed between confronting surfaces 642, 644 of the packages
610A, 610B, the underfill 620 can contact edge surfaces of package
610A and may contact a first surface 692 of the circuit panel 690
to which the package 610 is mounted. Further, portions of the
underfill 620 that extend along the edge surfaces of the packages
610A, 610B, if any, can be disposed at an angle between 0.degree.
and 90.degree. relative to a major surface of the circuit panel
over which the packages are disposed, and can be tapered from a
greater thickness adjacent the circuit panel to a smaller thickness
at a height above the circuit panel and adjacent one or more of the
packages.
[0115] A package arrangement shown in FIGS. 28A-D can be
implemented in one technique for making an underfill layer, and in
particular a portion thereof that is disposed between confronting
faces of packages 1910A and 1910B, such as surface 1942 of package
1910A and surface 1916 of package 1910B. As shown in FIG. 28A,
package 1910A can extend beyond an edge surface 1947 of package
1910B such that, for example, the surface 1944 of encapsulation
layer 1942 has a portion thereof that is exposed outside of package
1910B. Such an area can be used as a dispensing area 1949 whereby a
device can deposit an underfill material in a flowable state on the
dispensing area from a vertical position relative thereto. In such
an arrangement, the dispensing area 1949 can be sized such that the
underfill material can be deposited in a mass on the surface
without spilling off of the edge of the surface while reaching a
sufficient volume to flow under package 1910B where it can be drawn
by capillary into the area between the confronting surfaces of
packages 1910A and 1910B, including around any joints therebetween,
such as solder masses or the like. As the underfill material is
drawn between confronting surfaces, additional material can be
deposited on the dispensing area such that a continuous flow is
achieved that does not significantly spill over the edge of package
1910A. As shown in FIG. 28B, the dispensing area 1949 can surround
package 1910B and have a dimension D in an orthogonal direction
away from a peripheral edge of package 1910B of about one
millimeter (1 mm) on each side thereof. Such an arrangement can
allow for dispensing on one side of package 1910B or more than one
side, either sequentially or simultaneously. Alternative
arrangements are shown in FIG. 28C, wherein the dispensing area
1949 extends along only two adjacent sides of package 1910B and
have a dimension D' of about 1 mm in a direction orthogonally away
from a peripheral edge of the second package, and FIG. 28D, wherein
the dispensing area 1949 extends along a single side of package
1910B and may have a dimension D'' in an orthogonal direction away
from the peripheral edge of the package of, for example 1.5 mm to 2
mm.
[0116] In an arrangement where microelectronic packages 2010A and
2010B are of similar sizes in a horizontal profile, a compliant
bezel 2099 can be used to secure the packages 2010A and 2010B
together during attachment by, for example, joining of terminals of
the second package with the elements comprising the unencapsulated
portions 2039 of the wire bonds 2032, e.g., by heating or curing of
conductive masses 2052, e.g., reflowing of solder masses, to join
the packages 2010A and 2010B together. Such an arrangement is shown
in FIG. 29 in which package 2010B is assembled over package 2010A
with conductive masses 2052, e.g., solder masses, for example,
joined to terminals 2043 on package 2010B. The packages can be
aligned so that the solder masses 2052 align with unencapsulated
portions 2039 of the wire bonds 2032 of package 2010A or with
second conductive elements joined with the end surfaces 2038 of the
wire bonds 2032, as described above. The bezel 2099 can then be
assembled around packages 2010A and 2010B to maintain such
alignment during a heating process in which the terminals of the
second package are joined with the wire bonds 2032 or second
conductive elements of the first package. For example, a heating
process can be used to reflow solder masses 2052 to bond the
terminals of the second package with the wire bonds 2032 or second
conductive elements. Bezel 2099 can also extend inward along
portions of surface 2044 of package 2010B and along surface 2016 of
package 2010A to maintain the contact between the packages before
and during reflow. The bezel 2099 can be of a resiliently compliant
material such as rubber, TPE, PTFE (polytetrafluoroethylene),
silicone or the like and can be undersized relative to the size of
the assembled packages such that a compressive force is applied by
the bezel when in place. The bezel 2099 can also be left in place
during the application of an underfill material and can include an
opening to accommodate such application therethrough. The compliant
bezel 2099 can be removed after package assembly.
[0117] Additionally or alternatively, the assembly of
microelectronic packages 2110A and 2110B, as shown in FIGS. 30A-F,
a lower package 2110A can include at least one alignment surface
2151. One example of this is shown in FIG. 30A in which alignment
surfaces 2151 are included in encapsulation layer 2142 near the
corners of the package 2110B. The alignment surfaces are sloped
relative to the major surface and define an angle of between about
0.degree. and up to and including 90.degree. relative to major
surface 2144 at some location therefrom, the alignment surfaces
extending locations proximate the major surface 2144 and respective
minor surfaces 2145 that are spaced above substrate 2112 at a
greater distance than major surface 2144. The minor surfaces 2145
can be disposed adjacent the corners of package 2110A and can
extend partially between intersecting sides thereof. As shown in
FIG. 30B, the alignment surfaces can also form inside corners
opposite the intersecting sides of the package 2110A and can be
included in similar form along all corners, for example four
corners, of package 2110A. As illustrated in FIG. 30C, the
alignment surfaces 2151 can be positioned at an appropriate
distance from unencapsulated portions of corresponding wire bonds
2132 such that when a second package 2110B having protrusions,
e.g., electrically conductive protrusions such as conductive masses
or solder balls joined thereto is stacked on top of package 2110A,
the alignment surfaces 2151 will guide the solder balls into the
proper position overlying the unencapsulated portions of the wire
bonds 2132 that correspond with the alignment surfaces 2151. The
solder balls can then be reflowed to join with the unencapsulated
portions of the wire bonds 2132 of package 2110A.
[0118] A further arrangement employing alignment surfaces 2251 is
shown in FIGS. 31A-C, wherein the alignment surfaces 2251 extend
between a raised inner surface 2244 to a lower outer surface 2245.
In such an arrangement, inner surface 2244 can overlie
microelectronic element 2222 and can be spaced above substrate 2212
accordingly. Outer surface 2245 can be spaced closer to substrate
2212 in a direction of the thickness of the substrate and can be
positioned vertically between surface 2214 of substrate 2212 and
surface 2223 of microelectronic element 2222. One or more
unencapsulated portions of wire bonds 2232 can be positioned
relative to the alignment surfaces 2251 to achieve alignment of
solder balls 2252 or other conductive protrusion as described with
respect to FIGS. 30A-C. As described above, such a stepped
arrangement can be used with or without the described alignment
functionality to achieve an overall lower assembly height given a
certain bond mass size. Further, the incorporation of a raised
inner surface 2244 can lead to increased resistance of package
2210A to warping.
[0119] FIG. 12 is a photographic image showing exemplary joints
between the wire bonds 632 of a first component 610A and
corresponding solder masses 652 of a second component such as a
microelectronic package 610B. In FIG. 12, reference 620 indicates
where an underfill can be disposed.
[0120] FIGS. 13A, 13B, 13C, 13D, 13E and 13F illustrate some
possible variations in the structure of the wire bonds 32 as
described above relative to FIG. 1. For example, as seen in FIG.
13A, a wire bond 732A may have an upwardly extending portion 736
which terminates in an end 738A having the same radius as the
radius of portion 736.
[0121] FIG. 13B illustrates a variation in which the ends 738B are
tips which are tapered relative to portion 736. In addition, as
seen in FIG. 13C, a tapered tip 738B of a wire bond 732A may have a
centroid 740 which is offset in a radial direction 741 from an axis
of a cylindrical portion of the wire bond integral therewith. Such
shape may be a bonding tool mark resulting from a process of
forming the wire bond as will be described further below.
Alternatively, a bonding tool mark other than as shown at 738B may
be present on the unencapsulated portion of the wire bond. As
further seen in FIG. 13A, the unencapsulated portion 739 of a wire
bond may project away from the substrate 712 at an angle 750 within
25 degrees of perpendicular to the surface 730 of the substrate on
which the conductive elements 728 are disposed.
[0122] FIG. 13D illustrates that an unencapsulated portion of a
wire bond 732D can include a ball-shaped portion 738D. Some of all
of the wire bonds on the package can have such structure. As seen
in FIG. 13D, the ball-shaped portion 738D can be integral with a
cylindrical portion 736 of the wire bond 732D, wherein the
ball-shaped portion and at least a core of the cylindrical portion
of the wire bond consist essentially of copper, copper alloy or
gold. As will be described further below, the ball-shaped portion
can be formed by melting a portion of the wire exposed at an
opening of the capillary of the bonding tool during a pre-shaping
process before stitch-bonding the wire bond to a conductive element
728 of the substrate. As seen in FIG. 13D, the diameter 744 of the
ball-shaped portion 738D may be greater than the diameter 746 of
the cylindrical wire bond portion 736 that is integral therewith.
In a particular embodiment such as shown in FIG. 13D, the
cylindrical portion of a wire bond 732D that is integral with the
ball-shaped portion 738D can project beyond a surface 752 of the
encapsulant layer 751 of the package. Alternatively, as seen in
FIG. 13E, the cylindrical portion of a wire bond 732D may be fully
covered by the encapsulant layer. In such case, as seen in FIG.
13E, the ball-shaped portion 738D of the wire bond 732D may in some
cases be partly covered by the encapsulation layer 751.
[0123] FIG. 13F further illustrates a wire bond 732F having a core
731 of a primary metal and a metallic finish 733 thereon which
includes a second metal overlying the primary metal, such as the
palladium-clad copper wire or palladium-clad gold wire as described
above. In another example, an oxidation protection layer of a
non-metallic material such as a commercially available "organic
solderability preservative" (OSP) can be formed on the
unencapsulated portion of a wire bond to avoid oxidation thereof
until the unencapsulated portion of the wire bond is joined to a
corresponding contact of another component.
[0124] FIG. 14 illustrates a method by which wire bonds 32 (FIG. 1)
as described herein can be shaped and then stitch-bonded to the
conductive elements 28 on a substrate. As seen therein at stage A,
a segment 800, i.e., an integral portion having a predetermined
length 802, of a metal wire such as a gold or copper wire or
composite wire as described above described above relative to FIG.
1 is fed out of a capillary 804 of a bonding tool. In order to
ensure that a predetermined length of the metal wire is fed out
from the capillary, the initial wire length can be zeroed or
otherwise set to a known length by the bonding tool stitch-bonding
the wire then extending from the capillary before beginning to feed
the wire out for processing. At that time, the segment may extend
in a straight direction 801 perpendicular to a face 806 of the
capillary. As seen at stage B, the face 806 of the capillary 804
then is moved in at least a first direction 814 along, e.g.,
parallel to a first surface 812 of a forming unit 810 to bend the
metal wire segment 800 away from the perpendicular direction. The
forming unit 810 may be a specially designed tool having surfaces
suitable to assist in the forming, i.e., shaping, of the metal wire
segment prior to the metal wire segment being bonded to the
conductive element of the substrate.
[0125] As seen at stage B during the pre-forming process, a portion
of the segment 800 may then extend in a direction parallel to the
surface 812. Thereafter, as seen at stage C, the capillary is moved
over a second surface 816 which then causes at least a portion of
the segment 800 to project upwardly in a direction 818 along an
exterior wall 820 of the capillary. After pre-forming the metal
wire segment 800 in this manner, the capillary of the bonding tool
is now moved away from the forming unit 810 and moved towards the
conductive element 28 (FIG. 1) of the substrate where it then
stitch bonds a portion 822 of the metal wire segment adjacent to
the capillary opening 808 and the capillary face 806 to the
conductive element. As a result, an end 838 of the metal wire
segment 800 remote from the capillary opening 808 becomes an end 38
(FIG. 1) of the wire bond remote from the conductive element
28.
[0126] FIG. 15 further illustrates an example of movement of the
capillary over surfaces of a forming unit 810 in a method according
to an embodiment of the invention. As seen therein, the forming
unit 810 may have a first depression 830 in which the capillary 804
is disposed when the segment 800 is fed out of the opening 808 of
the capillary at stage A of the forming process. The depression may
include a channel or groove 832 which can help guide the segment
800 onto a surface 812 at stage B. The forming unit may further
include a channel 834 or groove for guiding the segment 800 in
stage B of the process. As further shown in FIG. 15, the forming
unit may include a further depression 840 having an interior
surface 816 against which the capillary moves in stage C of the
process to cause the metal wire segment to be bent in direction 818
against the exterior wall 820 of the capillary. The depression 840
in one example may have a triangular shape as seen in FIG. 15.
[0127] In an embodiment, a variation of the capillary shown in FIG.
14 can be used that incorporates a vertical or near-vertical side
wall 2820. As shown in FIG. 35, the side wall 2820 of capillary
2804 can be substantially vertical or, in other words, parallel to
the wire segment 2800 or perpendicular to the face 2806 of the
capillary 2804. This can allow for formation of a wire bond (32 in
FIG. 1) that is closer to vertical, i.e., closer to an angle of
90.degree. away from the surface of the first surface of the
substrate, than achieved by a side wall at an exterior of the
capillary that defines an angle having a measure substantially less
than 90.degree. , such as the capillary shown in FIG. 14. For
example, using a forming tool 2810, a wire bond can be achieved
that is disposed at an angle from the first portion which extends
between 25.degree. and 90.degree., or between about 45.degree. and
90.degree. or between about 80.degree. and 90.degree. with respect
to the first wire portion 2822.
[0128] In another variation, a capillary 3804 can include a surface
3808 that projects beyond the face 3806 thereof. This surface 3808
can be included, for example over the edge of the side wall 3820.
In the method for forming a wire bond (32 in FIG. 1, for example),
the capillary 3804 can be pressed against the first portion 3822 of
the wire segment 3800 during forming of wire segment, e.g., when
the capillary moves in a direction along a forming surface 3816
which extends in a direction away from surface 3812. In this
example, surface 3808 presses into the first portion 3822 at a
location near the bend from which the remaining wire segment 3800
extends. This can cause deformation of the wire segment 3800 such
that it may press against the wall 3820 of the capillary 3804 and
move to a somewhat more vertical position once the capillary 3804
is removed. In other instances, the deformation from the surface
3808 can be such that a position of the wire segment 3800 can be
substantially retained when the capillary 3804 is removed.
[0129] FIG. 16 is a photographic image showing that wire bonds 932
formed according to one or more of the methods described herein can
have ends 938 which are offset from their respective bases 934. In
one example, an end 938 of a wire bond can be displaced from its
respective base such that the end 938 is displaced in a direction
parallel to the surface of the substrate beyond a periphery of the
conductive element to which it is connected. In another example, an
end 938 of a wire bond can be displaced from its respective base
934 such that the end 938 is displaced in a direction parallel to
the surface of the substrate beyond a periphery 933 of the
conductive element to which it is connected.
[0130] FIG. 17 illustrates a variation of the above-described
pre-forming process which can be used to form wire bonds 332Cii
(FIG. 5) having a bend and which have ends 1038 displaced in a
lateral direction 1014A from the portions 1022 which will be
stitch-bonded to the conductive elements as bases 1034 of the wire
bonds.
[0131] As seen in FIG. 17, the first three stages A, B, and C of
the process can be the same as described above with reference to
FIG. 14. Then, referring to stages C and D therein, a portion 1022A
of the wire bond adjacent the face 806 of the capillary 804 is
clamped by a tool which can be integrated with the forming unit.
The clamping may be performed actively or passively as a result of
the motion of the capillary over the forming unit. In one example,
the clamping can be performed by pressing a plate having a non-slip
surface thereon onto the metal wire segment 800 to preclude
movement of the metal wire segment.
[0132] While the metal wire segment 800 is clamped in this manner,
at stage D shown in FIG. 17, the capillary tool moves in a
direction 1016 along a third surface 1018 of the forming unit 1010
and feeds out a length of wire equivalent to the distance moved
along surface 1018. Thereafter, at stage E, the capillary is moved
downwardly along a third surface 1024 of the forming unit to cause
a portion of the wire to be bent upwardly along an exterior surface
1020 of the capillary 804. In such way, an upwardly projecting
portion 1026 of the wire can be connected to another upwardly
projecting portion 1036 by a third portion 1048 of the metal
wire.
[0133] After formation of the wire segment and bonding thereof to a
conductive element to form a wire bond, particularly of the ball
bond type discussed above, the wire bond (32 in FIG. 1, for
example) is then separated from a remaining portion of the wire
within the capillary (such as 804 in FIG. 14). This can be done at
any location remote from the base 34 of the wire bond 32 and is
preferably done at a location remote from the base 34 by a distance
at least sufficient to define the desired height of the wire bond
32. Such separation can be carried out by a mechanism disposed
within the capillary 804 or disposed outside of the capillary 804,
between the face 806 and the base 34 of the wire bond 32. In one
method, the wire segment 800 can be separated by effectively
burning through the wire 800 at the desired separation point, which
can be done by application of a spark or flame thereto. To achieve
greater accuracy in wire bond height, different forms of cutting
the wire segment 800 can be implemented. As described herein,
cutting can be used to describe a partial cut that can weaken the
wire at a desired location or cutting completely through the wire
for total separation of the wire bond 32 from the remaining wire
segment 800.
[0134] In one example shown in FIG. 32 a cutting blade 805 can be
integrated into the bond head assembly, such as within capillary
804. As shown, an opening 807 can be included in the side wall 820
of the capillary 804 through which cutting blade 805 can extend.
The cutting blade 805 can be moveable in and out of the interior of
the capillary 804 so that it can alternately allow the wire 800 to
freely pass therethrough or engage the wire 800. Accordingly, the
wire 800 can be drawn out and the wire bond 32 formed and bonded to
a conductive element 28 with the cutting blade 805 in a position
outside of the capillary interior. After bond formation, the wire
segment 800 can be clamped using a clamp 803 integrated in the bond
head assembly to secure the position of the wire. The cutting blade
803 can then be moved into the wire segment to either fully cut the
wire or to partially cut or weaken the wire. A full cut can form
end surface 38 of the wire bond 32 at which point the capillary 804
can be moved away from the wire bond 32 to, for example, form
another wire bond. Similarly, if the wire segment 800 is weakened
by the cutting blade 805, movement of the bond head unit with the
wire still held by the wire clamp 803 can cause separation by
breaking the wire 800 at the area weakened by the partial cut.
[0135] The movement of the cutting blade 805 can be actuated by
pneumatics or by a servo motor using an offset cam. In other
examples the cutting blade 805 movement can be actuated by a spring
or a diaphragm. The triggering signal for the cutting blade 805
actuation can be based on a time delay that counts down from
formation of the ball bond or can be actuated by movement of the
capillary 804 to a predetermined height above the wire bond base
34. Such a signal can be linked to other software that operates the
bonding machine so that the cutting blade 805 position can be reset
prior to any subsequent bond formation. The cutting mechanism can
also include a second blade (not shown) at a location juxtaposed
with blade 805 with the wire therebetween, so as to cut the wire by
movement of one or more of the first and second blades relative to
the other of the first and second blades, such as in one example,
from opposite sides of the wire.
[0136] In another example, a laser 809 can be assembled with the
bond head unit and positioned to cut the wire. As shown in FIG. 33,
a laser head 809 can be positioned outside of capillary 804 such as
by mounting thereto or to another point on the bond head unit that
includes capillary 804. The laser can be actuated at a desired
time, such as those discussed above with respect to the cutting
blade 805 in FIG. 32, to cut the wire 800, forming end surface 38
of the wire bond 32 at a desired height above the base 34. In other
implementations, the laser 809 can be positioned to direct the
cutting beam through or into the capillary 804 itself and can be
internal to the bond head unit. In an example, a carbon dioxide
laser can be used or, as an alternative, a Nd:YAG or a Cu vapor
laser could be used.
[0137] In another embodiment a stencil unit 824 as shown in FIGS.
34A-C can be used to separate the wire bonds 32 from the remaining
wire segment 800. As shown in FIG. 34A, the stencil 824 can be a
structure having a body that defines an upper surface 826 at or
near the desired height of the wire bonds 32. The stencil 824 can
be configured to contact the conductive elements 28 or any portions
of the substrate 12 or package structure connected thereto between
the conductive elements 28. The stencil includes a plurality of
holes 828 that can correspond to the desired locations for the wire
bonds 32, such as over conductive elements 28. The holes 828 can be
sized to accept the capillary 804 of the bond head unit therein so
that the capillary can extend into the hole to a position relative
to the conductive element 28 to bond the wire 800 to the conductive
element, 28 to form the base 34, such as by ball bonding or the
like. In one example, the stencil can have holes through which
individual ones of the conductive elements are exposed. In another
example, a plurality of the conductive elements can be exposed by a
single hole of the stencil. For example, a hole can be a
channel-shaped opening or recess in the stencil through which a row
or column of the conductive elements are exposed at a top surface
826 of the stencil.
[0138] The capillary 804 can then be moved vertically out of the
hole 828 while drawing out the wire segment to a desired length.
Once cleared from the hole 828, the wire segment can be clamped
within the bond head unit, such as by clamp 803, and the capillary
804 can be moved in a lateral direction (such as parallel to the
surface 826 of stencil 824) to move the wire segment 800 into
contact with an edge 829 of the stencil 824 defined by the
intersection of the surface of the hole 828 and the outside surface
826 of the stencil 824. Such movement can cause separation of the
wire bond 32 from a remaining portion of the wire segment 800 that
is still held within the capillary 804. This process can be
repeated to form the desired number of wire bonds 32 in the desired
locations. In an implementation, the capillary can be moved
vertically prior to wire separation such that the remaining wire
segment projects beyond the face 806 of the capillary 804 by a
distance 802 sufficient to form a subsequent ball bond. FIG. 34B
shows a variation of stencil 824 in which the holes 828 can be
tapered such that they have a diameter that increases from a first
diameter at surface 826 to a greater diameter away from surface
826. In another variation, as shown in FIG. 34C, the stencil can be
formed having an outer frame 821 having a thickness sufficient to
space apart surface 826 at the desired distance from substrate 12.
Frame 821 can at least partially surround a cavity 823 configured
to be positioned adjacent substrate 12 with a thickness of the
stencil 824 extending between the surface 826 and the open area 823
such that the portion of stencil 824 that includes the holes 828 is
spaced apart from the substrate 12 when positioned thereon.
[0139] FIGS. 18, 19 and 20 illustrate one technique that can be
used when forming the encapsulation layer by molding in order that
unencapsulated portions 39 (FIG. 1) of the wire bonds project
beyond a surface 44 of the encapsulation layer 42. Thus, as seen in
FIG. 18, a film-assisted molding technique can be used by which a
temporary film 1102 is placed between a plate 1110 of a mold and a
cavity 1112 in which a subassembly including the substrate, wire
bonds 1132 joined thereto, and a component such as a
microelectronic element may be joined. FIG. 18 further shows a
second plate 1111 of the mold which can be disposed opposite the
first plate 1110.
[0140] Then, as seen in FIGS. 19-20, when the mold plates 1110,
1111 are brought together, the ends 1138 of wire bonds 1132 can
project into the temporary film 1102. When a mold compound is
flowed in the cavity 1112 to form encapsulation layer 1142, the
mold compound does not contact the ends 1138 of the wire bonds
because they are covered by the temporary film 1102. After this
step, the mold plates 1110, 1111 are removed from the encapsulation
layer 1142, the temporary film 1102 can now be removed from the
mold surface 1144, which then leaves the ends 1138 of the wire
bonds 1132 projecting beyond the surface 1144 of the encapsulation
layer.
[0141] The film-assisted molding technique may be well adapted for
mass production. For example, in one example of the process, a
portion of a continuous sheet of the temporary film can be applied
to the mold plate. Then the encapsulation layer can be formed in a
cavity 1112 that is at least partially defined by the mold plate.
Then, a current portion of the temporary film 1102 on the mold
plate 1110 can be replaced by automated means with another portion
of the continuous sheet of the temporary film.
[0142] In a variation of the film-assisted molding technique,
instead of using a removable film as described above, a
water-soluble film can be placed on an inner surface of the mold
plate 1110 prior to forming the encapsulation layer. When the mold
plates are removed, the water soluble film can be removed by
washing it away so as to leave the ends of the wire bonds
projecting beyond the surface 1144 of the encapsulation layer as
described above.
[0143] In an example of the method of FIGS. 18 and 19, the heights
of the wire bonds 1132 above the surface 1144 of encapsulation
layer 1142 can vary among the wire bonds 1132, as shown in FIG.
37A. A method for further processing the package 1110 such that the
wire bonds 1132 project above surface 1142 by substantially uniform
heights is shown in FIGS. 37B-D and utilizes a sacrificial material
layer 1178 that can be formed to cover the unencapsulated portions
of the wire bonds 1132 by application thereof over surface 1144.
The sacrificial layer 1178 can then be planarized to reduce the
height thereof to the desired height for wire bonds 1132, which can
be done by lapping, grinding, or polishing or the like. As also
illustrated in the Figures, the planarization of the sacrificial
layer 1178 can begin by reducing the height thereof to a point
where the wire bonds 1132 become exposed at the surface of the
sacrificial layer 1178. The planarization process can then also
planarize the wire bonds 1132 simultaneously with the sacrificial
layer 1178 such that, as the height of the sacrificial layer 1178
is continued to be reduced, the heights of the wire bonds 1132 are
also reduced. The planarization can be stopped once the desired
height for the wire bonds 1132 is reached. It is noted that in such
a process the wire bonds 1132 can be initially formed such that
their heights, while being non-uniform, are all greater than the
targeted uniform height. After planarization reduces the wire bonds
1132 to the desired height, the sacrificial layer 1178 can be
removed such as by etching or the like. The sacrificial layer 1178
can be formed from a material that can allow for removal by etching
using an etchant that will not significantly affect the encapsulant
material. In one example, the sacrificial layer 1178 can be made
from a water soluble plastic material.
[0144] FIGS. 21 and 22 illustrate another method by which
unencapsulated portions of the wire bonds can be formed which
project beyond a surface of the encapsulation layer. Thus, in the
example seen in FIG. 21, initially wire bonds 1232 may be flush
with or may not even be exposed at a surface 1244 of the
encapsulation layer 1242. Then, as shown in FIG. 22, a portion of
the encapsulation layer, e.g., a molded encapsulation layer, can be
removed to cause the ends 1238 to project beyond the modified
encapsulation layer surface 1246. Thus, in one example, laser
ablation can be used to recess the encapsulation layer uniformly to
form a planar recessed surface 1246. Alternatively, laser ablation
can be performed selectively in areas of the encapsulation layer
adjoining individual wire bonds.
[0145] Among other techniques that can be used to remove at least
portions of the encapsulation layer selectively to the wire bonds
include "wet blasting" techniques. In wet blasting, a stream of
abrasive particles carried by a liquid medium is directed towards a
target to remove material from the surface of the target. The
stream of particles may sometimes be combined with a chemical
etchant which may facilitate or accelerate the removal of material
selectively to other structure such as the wire bonds which are to
remain after wet blasting.
[0146] In the example shown in FIGS. 38A and 38B, in a variation of
the method shown in FIGS. 21 and 22, wire bond loops 1232' can be
formed that have bases 1234a on conductive elements 1228 at one end
and are attached to a surface of the microelectronic element 1222
at the other end 1234b. For attachment of the wire bond loops 1232'
to the microelectronic element 1222, the surface of the
microelectronic element 1223 can be metalized such as by
sputtering, chemical vapor deposition, plating or the like. The
bases 1234a can be ball bonded, as shown, or edge bonded, as can
the ends 1232b joined to the microelectronic element 1222. As
further shown in FIG. 38A, the dielectric encapsulation layer 1242
can be formed over substrate 1212 to cover the wire bond loops
1232'. The encapsulation layer 1242 can then be planarized, such as
by grinding, lapping, polishing, or the like, to reduce the height
thereof and to separate the wire bond loops 1232' into connection
wire bonds 1232A that are available for joining to at least the end
surfaces 1238 thereof for electrical connection to the conductive
elements 1228 and thermal dissipation bonds 1232B that are joined
to the microelectronic element 1222. The thermal dissipation bonds
can be such that they are not electrically connected to any of the
circuitry of the microelectronic element 1222 but are positioned to
thermally conduct heat away from the microelectronic element 1222
to the surface 1244 of the encapsulation layer 1242. Additional
processing methods can be applied to the resulting package 1210',
as described elsewhere herein.
[0147] Another method for forming wire bonds 2632 to a
predetermined height is shown in FIGS. 39A-C. In such a method a
sacrificial encapsulation layer 2678 can be formed over the surface
2614 of substrate 2612, at least in the second 2620 region thereof.
The sacrificial layer 2678 can also be formed over the first region
2618 of the substrate 2612 to cover the microelectronic element
2622 in a similar manner to the encapsulation layers described with
respect to FIG. 1, above. The sacrificial layer 2678 includes at
least one opening 2679 and in some embodiments a plurality of
openings 2679 to expose the conductive elements 2628. The openings
2679 can be formed during molding of the sacrificial layer 2678 or
after molding by etching, drilling, or the like. In one embodiment,
a large opening 2679 can be formed to expose all of the conductive
elements 2628, while in other embodiments a plurality of large
openings 2679 can be formed to expose respective groups of
conductive elements 2628. In further embodiments, openings 2629 can
be formed that correspond to individual conductive elements 2628.
The sacrificial layer 2678 is formed having a surface 2677 at a
desired height for the wire bonds 2632 such that the wire bonds
2632 can be formed by bonding bases 2634 thereof to the conductive
elements 2628 and then drawing out the wire to reach the surface
2677 of the sacrificial layer 2678. Then, the wire bonds can be
drawn laterally of the opening to overlie portions of the surface
2677 of the sacrificial layer 2678. The capillary of the bond
forming instrument (such as capillary 804 as shown in FIG. 14) can
be moved to press the wire segment into contact with the surface
2677 such that the pressure on the wire between the surface 2677
and the capillary causes the wire to sever on surface 2677, as
shown in FIG. 39A.
[0148] The sacrificial layer 2678 can then be removed by etching or
another similar process. In an example, the sacrificial layer 2678
can be formed from a water soluble plastic material such that it
can be removed by exposure to water without affecting the other
components of the in-process unit 2610''. In another embodiment,
sacrificial layer 2678 can be made from a photoimageable material
such as a photoresist such that it can be removed by exposure to a
light source. A portion of sacrificial layer 2678' can remain
between microelectronic element 2622 and surface 2614 of substrate
2612 that can act as an underfill surrounding solder balls 2652.
After removal of the sacrificial layer 2678 an encapsulation layer
2642 is formed over the in-process unit to form package 2610. The
encapsulation layer 2642 can be similar to those described above
and can substantially cover surface 2614 of substrate 2612 and
microelectronic element 2622. Encapsulation layer 2642 can further
support and separate the wire bonds 2632. In the package 2610 shown
in FIG. 29C, the wire bonds include portions of the edge surfaces
2637 thereof that are exposed at surface 2644 of the encapsulant
2642 and extend substantially parallel thereto. In other
embodiments, the wire bonds 2632 and the encapsulation layer 2642
can be planarized to form a surface 2644 with wire bonds that have
end surfaces exposed thereon and substantially flush therewith.
[0149] The above-described embodiments and variations of the
invention can be combined in ways other than as specifically
described above. It is intended to cover all such variations which
lie within the scope and spirit of the invention.
* * * * *