U.S. patent application number 13/477940 was filed with the patent office on 2012-09-13 for extreme ultra violet light source apparatus.
This patent application is currently assigned to Komatsu Ltd./Gigaphoton, Inc.. Invention is credited to Tamotsu ABE, Takeshi Asayama, Hideo Hoshino, Hakaru Mizoguchi, Masato Moriya, Toshihiro Nishisaka, Hiroshi Someya.
Application Number | 20120228527 13/477940 |
Document ID | / |
Family ID | 41052652 |
Filed Date | 2012-09-13 |
United States Patent
Application |
20120228527 |
Kind Code |
A1 |
ABE; Tamotsu ; et
al. |
September 13, 2012 |
EXTREME ULTRA VIOLET LIGHT SOURCE APPARATUS
Abstract
An extreme ultra violet light source apparatus prevents debris
staying and accumulating within a chamber from contaminating the
chamber and deteriorating the performance of an important optical
component. The extreme ultra violet light source apparatus
includes: a chamber in which extreme ultra violet light is
generated; a driver laser for applying a laser beam to a target
supplied to a predetermined position within the chamber to generate
plasma; a collector mirror provided within the chamber, for
collecting and outputting the extreme ultra violet light radiated
from the plasma; an exhaust path communicating with the chamber and
connected to an exhausting device, for maintaining an interior of
the chamber at a certain pressure; a catching chamber provided in
the exhaust path, for catching debris generated from the plasma;
and a collecting unit for collecting the caught debris out of the
chamber.
Inventors: |
ABE; Tamotsu;
(Hiratsuka-shi, JP) ; Nishisaka; Toshihiro;
(Hiratsuka-shi, JP) ; Someya; Hiroshi;
(Hiratsuka-shi, JP) ; Moriya; Masato;
(Hiratsuka-shi, JP) ; Asayama; Takeshi;
(Hiratsuka-shi, JP) ; Hoshino; Hideo;
(Hiratsuka-shi, JP) ; Mizoguchi; Hakaru;
(Hiratsuka-shi, JP) |
Assignee: |
Komatsu Ltd./Gigaphoton,
Inc.
Tokyo
JP
|
Family ID: |
41052652 |
Appl. No.: |
13/477940 |
Filed: |
May 22, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12382108 |
Mar 9, 2009 |
8212228 |
|
|
13477940 |
|
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Current U.S.
Class: |
250/504R |
Current CPC
Class: |
G03F 7/70033 20130101;
H05G 2/001 20130101; G03F 7/70916 20130101 |
Class at
Publication: |
250/504.R |
International
Class: |
G21K 5/02 20060101
G21K005/02 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 10, 2008 |
JP |
2008-059179 |
Claims
1. An extreme ultra violet light source apparatus for generating
extreme ultra violet light by applying a laser beam to a target,
said apparatus comprising: a chamber in which extreme ultra violet
light is generated; a driver laser for applying a laser beam to a
target supplied to a predetermined position within said chamber to
generate plasma; a collector mirror provided within said chamber,
for collecting the extreme ultra violet light radiated from the
plasma to output the extreme ultra violet light; an exhaust path
communicating with said chamber and connected to an exhausting
device, for maintaining an interior of said chamber at a certain
pressure; a catching chamber provided in said exhaust path, for
catching debris generated from the plasma; and a collecting unit
for collecting the caught debris out of said chamber.
2. An extreme ultra violet light source apparatus for generating
extreme ultra violet light by applying a laser beam to a target,
said apparatus comprising: a chamber in which extreme ultra violet
light is generated; a driver laser for applying a laser beam to a
target supplied to a predetermined position within said chamber to
generate plasma; a collector mirror provided within said chamber,
for collecting the extreme ultra violet light radiated from the
plasma to output the extreme ultra violet light; an exhaust path
communicating with said chamber and connected to an exhausting
device, for maintaining an interior of said chamber at a certain
pressure; a catching and reaction chamber provided in said exhaust
path, for catching debris generated from the plasma, and making the
caught debris react with an reactive gas to generate a reaction
product gas; and a collecting unit connected to said exhaust path,
for treating the reaction product gas to collect the caught debris
out of said chamber.
3. The extreme ultra violet light source apparatus according to
claim 2, further comprising: a skimmer provided between said
chamber and said exhaust path, and formed with a debris passage
hole for passing the debris from said chamber to said exhaust path;
and a partition wall provided between said exhaust path and said
catching and reaction chamber, and formed with a debris passage
hole for passing the debris from said exhaust path to said catching
and reaction chamber and an exhaust gas vent hole for passing the
reactive gas and the reaction product gas from said catching and
reaction chamber to said exhaust path.
4. The extreme ultra violet light source apparatus according to
claim 2, wherein said collecting unit is connected to said exhaust
path and said catching and reaction chamber.
5. The extreme ultra violet light source apparatus according to
claim 2, further comprising: a switching valve communicating with
said chamber, wherein said extreme ultra violet light source
apparatus comprises plural exhaust paths respectively communicating
with said collecting unit, and the plural exhaust paths to
communicate with said chamber are switched by said switching
valve.
6. The extreme ultra violet light source apparatus according to
claim 2, further comprising: a heating device provided in said
catching and reaction chamber, for heating said reactive gas.
7. The extreme ultra violet light source apparatus according to
claim 1, further comprising: a charging device for charging neutral
particles.
8. The extreme ultra violet light source apparatus according to
claim 1, further comprising: a magnetic field generating device
including a coil that generates a magnetic field for focusing and
guiding charged debris to said exhaust path.
9. The extreme ultra violet light source apparatus according to
claim 1, further comprising: a magnetic field generating device
including at least two coils that generate magnetic fields for
focusing and guiding charged debris to said exhaust path, wherein a
diameter of a coil at an exhaust path side is larger than a
diameter of a coil at an opposite side to said exhaust path.
10. The extreme ultra violet light source apparatus according to
claim 1, wherein said target includes tin (Sn).
11. The extreme ultra violet light source apparatus according to
claim 1, wherein said target includes a droplet target.
12. The extreme ultra violet light source apparatus according to
claim 1, wherein said target includes a wire target.
13. The extreme ultra violet light source apparatus according to
claim 12, wherein said wire target includes a coated wire
target.
14. The extreme ultra violet light source apparatus according to
claim 1, wherein said drive laser includes a carbon dioxide
(CO.sub.2) laser.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to an extreme ultra violet
(EUV) light source apparatus to be used as a light source of
exposure equipment.
[0003] 2. Description of a Related Art
[0004] In recent years, as semiconductor processes become finer,
photolithography has been making rapid progress to finer
fabrication. In the next generation, microfabrication of 100 nm to
70 nm, further, microfabrication of 50 nm or less will be required.
Accordingly, in order to fulfill the requirement for
microfabrication of 50 nm or less, for example, exposure equipment
is expected to be developed by combining an EUV light source
generating EUV light with a wavelength of about 13 nm and reduced
projection reflective optics.
[0005] As the EUV light source, there are three kinds of light
sources, which include an LPP (laser produced plasma) light source
using plasma generated by applying a laser beam to a target
(hereinafter, also referred to as "LPP EUV light source
apparatus"), a DPP (discharge produced plasma) light source using
plasma generated by discharge, and an SR (synchrotron radiation)
light source using orbital radiation. Among them, the LPP type EUV
light source apparatus has the advantages that extremely high
intensity close to black body radiation can be obtained because
plasma density can be considerably made larger, that light emission
of only the necessary waveband can be performed by selecting the
target material, and that an extremely large collection solid angle
of 2.pi. steradian can be ensured because it is a point light
source having substantially isotropic angle distribution and there
is no structure surrounding the light source such as electrodes.
Therefore, the LPP type EUV light source apparatus is considered to
be predominant as a light source for EUV lithography requiring
power of more than several tens of watts.
[0006] Here, a principle of generating EUV light in the LPP type
EUV light source apparatus will be briefly explained. When laser
light is applied to a target material supplied into a vacuum
chamber, the target material is excited and plasmarized. Various
wavelength components including EUV light are radiated from the
plasma. Then, the EUV light is reflected and collected by using an
EUV collector mirror that selectively reflects a desired wavelength
component (e.g., a component having a wavelength of 13.5 nm), and
outputted to an exposure unit.
[0007] In the LPP EUV light source apparatus, when plasma is
generated by applying a laser beam to a target, especially, if
debris containing fast ions, neutral particles, and residual
droplets emitted from the plasma are left, the operation of the EUV
light source apparatus is disturbed. That is, the fast ions scrape
(or sputter) the structures within the chamber such as a collector
mirror, a nozzle of a target supply unit, and so on, and change the
shapes of those structures. When the shape of the collector mirror
changes, the reflectance of the collector mirror becomes lower and
the output as the EUV light source becomes lower. Further,
regarding the other structures, their functions are deteriorated
and the operation as the EUV light source is hindered due to shape
changes. Furthermore, the neutral particles and the residual
droplets of the target are deposited on the structures including
the collector mirror within the chamber and decrease the function
of the EUV light source apparatus. For example, in a
turbo-molecular pump for maintaining the degree of vacuum within
the chamber, if the neutral particles and the residual droplets are
deposited on turbine blades, the exhaust velocity becomes lower
and, in the worst case, the blades collide with each other and are
damaged, the turbo-molecular pump breaks down, and the EUV light
source apparatus no longer operates.
[0008] A technology of protecting structures within the chamber
from these fast ions, neutral particles, and/or residual droplets
is called a mitigation technology, and various technologies have
been proposed and implemented in the process of development of EUV
light source. Japanese Patent Application Publication
JP-P2006-80255A discloses a technology of protecting a collector
mirror by applying a magnetic field into a chamber and ionizing
neutral particles, and trapping the charged particles by the
applied magnetic field. Further, U.S. Patent Application
Publication US 2006/0091109 A1 discloses an EUV light source
apparatus in which a reactive gas is introduced into a chamber and
the attached material to a collector mirror and so on are allowed
to react with the reactive gas and are exhausted.
[0009] The mitigation technology conventionally used is intended to
prevent the deterioration of the performance of main optical
components such as a collector mirror due to attachment of debris
flying from the plasma and sputtering by the debris. Accordingly,
even if the debris can be prevented from reaching the main optical
components such as a collector mirror, the LPP EUV light source
apparatus cannot stably be run in a long period. That is, in the
EUV light source apparatus, the debris, which are produced from the
plasma when a laser beam is applied to a target to generate the
plasma for EUV light generation, stay and gradually accumulate
within the chamber, and the accumulated debris contaminate the
interior of the chamber.
[0010] Accordingly, there are problems that the accumulated debris
are deposited on the main optical components, and thereby, reduce
the reflectance or transmittance of the main optical components and
deteriorate the performance of the main optical components, and the
laser beam and EUV light are scattered due to increase of debris
gradually staying within the chamber and efficient EUV light
generation and collection are inhibited. On this account, it has
been necessary to clean the interior of the chamber while the
generation of EUV light is stopped at regular time intervals.
Further, there is a problem that the staying debris enter the pump
attached for evacuating the chamber and deteriorate the evacuation
performance of the pump, and the operation time of the apparatus
becomes shorter for maintenance of the pump. In any case, the
long-term operation stability of the LPP EUV light source apparatus
is deteriorated by the debris dispersing and staying within the
chamber for a long period, and resolving these problems has been an
issue.
BRIEF SUMMARY OF THE INVENTION
[0011] The present invention has been achieved in view of the
above-mentioned problems. A purpose of the present invention is to
provide an extreme ultra violet light source apparatus in which
debris staying and accumulating within a chamber can be prevented
from contaminating the chamber, deteriorating the performance of
important optical component such as a collector mirror, and
deteriorating the performance of a vacuum intake and exhausting
unit, and extreme ultra violet light can stably be generated for a
long period.
[0012] In order to accomplish the above-mentioned purpose, an
extreme ultra violet light source apparatus according to one aspect
of the present invention is an extreme ultra violet light source
apparatus for generating extreme ultra violet light by applying a
laser beam to a target, and including: a chamber in which extreme
ultra violet light is generated; a driver laser for applying a
laser beam to a target supplied to a predetermined position within
the chamber to generate plasma; a collector mirror provided within
the chamber, for collecting the extreme ultra violet light radiated
from the plasma to output the extreme ultra violet light; an
exhaust path communicating with the chamber and connected to an
exhausting device, for maintaining an interior of the chamber at a
certain pressure; a catching chamber provided in the exhaust path,
for catching debris generated from the plasma; and a collecting
unit for collecting the caught debris out of the chamber.
[0013] Further, an extreme ultra violet light source apparatus
according to another aspect of the present invention is an extreme
ultra violet light source apparatus for generating extreme ultra
violet light by applying a laser beam to a target, and including: a
chamber in which extreme ultra violet light is generated; a driver
laser for applying a laser beam to a target supplied to a
predetermined position within the chamber to generate plasma; a
collector mirror provided within the chamber, for collecting the
extreme ultra violet light radiated from the plasma to output the
extreme ultra violet light; an exhaust path communicating with the
chamber and connected to an exhausting device, for maintaining an
interior of the chamber at a certain pressure; a catching and
reaction chamber provided in the exhaust path, for catching debris
generated from the plasma, and making the caught debris react with
an reactive gas to generate a reaction product gas; and a
collecting unit connected to the exhaust path, for treating the
reaction product gas to collect the caught debris out of the
chamber.
[0014] According to the present invention, by catching the debris
within the chamber in the exhaust path and collecting the caught
debris out of the chamber without stopping the generation of EUV
light, the inserted target material can be collected or removed,
the intervals of cleaning operation within the chamber while
releasing the vacuum can be greatly increased, the EUV light source
apparatus can be continuously operated at a practical level, and
the target material can be effectively utilized so that the
operation cost of the EUV light source apparatus can be
reduced.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 shows an internal structure of an EUV light source
apparatus according to the first embodiment of the present
invention;
[0016] FIG. 2 shows an internal structure of an EUV light source
apparatus according to the second embodiment of the present
invention;
[0017] FIG. 3 shows a partition wall of the EUV light source
apparatus according to the second embodiment of the present
invention seen from above;
[0018] FIG. 4 shows an internal structure at the downstream side of
an EUV light source apparatus according to the third embodiment of
the present invention;
[0019] FIG. 5 shows an internal structure of an EUV light source
apparatus according to the fourth embodiment of the present
invention;
[0020] FIG. 6 is a table showing boiling points of reaction
products of halogen gas and tin at one atmosphere;
[0021] FIG. 7 shows an internal structure of an EUV light source
apparatus according to the fifth embodiment of the present
invention;
[0022] FIG. 8 shows an internal structure of an EUV light source
apparatus according to the sixth embodiment of the present
invention;
[0023] FIG. 9 shows an internal structure of an EUV light source
apparatus according to the seventh embodiment of the present
invention; and
[0024] FIG. 10 shows a modified example of a coated wire of the EUV
light source apparatus according to the seventh embodiment of the
present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0025] Hereinafter, preferred embodiments of the present invention
will be explained in detail by referring to the drawings. The same
reference characters are assigned to the same component elements
and the description thereof will be omitted.
[0026] FIG. 1 is a diagram for explanation of the first embodiment
of the present invention. Referring to FIG. 1, a basic
configuration and an operation of an EUV light source apparatus
according to the embodiment will be explained. The EUV light source
apparatus shown in FIG. 1 employs a laser produced plasma (LPP)
system for generating EUV light by applying a laser beam to a
target material for excitation.
[0027] As shown in FIG. 1, the EUV light source apparatus includes
a chamber 8 in which EUV light is generated, a target supply unit 7
for supplying a target 1 to a predetermined position within the
chamber 8, a driver laser 5 for generating an excitation laser beam
2 to be applied to the target 1, a laser beam focusing optics 6 for
collecting the excitation laser beam 2 generated by the driver
laser 5, and a collector mirror 10 for collecting EUV light 4
emitted from plasma 3 generated when the excitation laser beam 2 is
applied to the target 1 and outputting the EUV light 4.
[0028] In the EUV light source apparatus, for example, a metal
((liquid-state or solid-state tin (Sn)) is used as the target 1,
and a carbon dioxide (CO.sub.2) laser that can generate light
having a relatively long wavelength is used as the driver laser 5.
Tin is used as the target 1 because it has a high conversion
efficiency from laser beam energy to EUV light energy. When a
carbon dioxide laser is applied to the tin target, the conversion
efficiency is about 2% to 4%. On the other hand, when another
material, for example, xenon (Xe) is used as the target 1, the
conversion efficiency is about 1%. As a form of the target, jet or
droplets of melted tin or tin-coated wire or rotary disk is used.
As below, the case where the carbon dioxide laser is applied to the
tin target will be explained as an example. However, in the present
invention, the kinds of target materials and laser light sources
are not limited to these and various kinds of target materials and
laser light sources may be used.
[0029] The laser beam focusing optics 6 includes at least one lens
and/or at least one mirror. The laser beam focusing optics 6 may be
located inside the vacuum chamber 8 as shown in FIG. 1, or outside
the vacuum chamber 8.
[0030] The collector mirror 10 is a collection optics for
collecting light by selectively reflecting a predetermined
wavelength component (e.g., EUV light near 13.5 nm) of the various
wavelength components emitted from the plasma 3. The collector
mirror 10 has a concave reflecting surface, and a multilayer film
of molybdenum (Mo) and silicon (Si) for selectively reflecting EUV
light having a wavelength component near 13.5 nm is formed on the
reflecting surface.
[0031] Furthermore, details of the EUV light source apparatus
according to the first embodiment of the present invention will be
explained. Regarding the target 1, the melted tin is processed into
droplets to be a droplet target 1a, and outputted from a nozzle of
the target supply unit 7. In droplet generation by the continuous
jet method typically used, for example, when droplets of about 20
.mu.m in diameter are outputted, the droplets are generated at
several tens of megahertz. By culling the droplets in the target
supply unit, a droplet line at 100 kHz is outputted from the
nozzle. The initial speed when the droplets are outputted is about
100 m/sec, for example.
[0032] When the carbon dioxide laser beam having a repetition
frequency of 100 kHz, energy of several tens of millijoule, a pulse
width of several tens of nanoseconds is collected and applied to
the droplet line, plasma is generated. In this regard, the laser
beam and the target output are synchronously controlled by a
synchronous control device (not shown) so that one-pulse laser beam
is applied for one droplet.
[0033] The light having a wavelength of 13.5 nm of the emitted
light emitted from the plasma is collected by the collector mirror
and projected onto an exposure unit. The space in which the plasma
is generated is isolated from the air and the degree of vacuum of
several pascal or less is maintained by a turbo molecular pump
(TMP). Such a degree of vacuum is maintained for preventing the
absorption of EUV light by the residual gas and effectively using
the influence and effect of a magnetic field, which will be
explained later. That is, if the gas pressure within the chamber is
high, the mean free path is short and the time period, in which
charged particles move without collision while receiving the
influence of the magnetic field, is short, and thereby, the
deflection effect or focusing effect on the charged particles due
to the influence of magnetic field becomes weak.
[0034] A static magnetic field is applied into the chamber by a
magnetic generating unit including an electromagnet or the like. In
the embodiment, for example, coils 15 and 16 are provided above and
under the plasma generation space of the chamber 8, respectively,
and a mirror magnetic field is formed by these coils. Further, a
charging unit 17 for charging neutral particles in the magnetic
field is provided in the chamber 8. As the charging unit 17, an
electron beam unit may be used, or a high-frequency wave unit or
microwave unit may be used. As the microwave unit, an electron
cyclotron resonance (ECR) unit may be used.
[0035] When plasma is generated, debris containing fast ions,
neutral particles, and residual droplets are generated following
the plasma generation. The fast ions are deflected by the mirror
magnetic field generated within the chamber 8 and move toward the
upper part and lower part of the chamber 8. Among the ions, the
fast ions moving toward the upper part of the chamber 8 are focused
near the nozzle of the target supply unit 7, collide with the tin
vapor injected from the nozzle of the target supply unit 7, the
fast ions, and/or neutral particles generated by the collision of
the fast ions, and lose energy and charge and become neutral
particles. On the other hand, the fast ions moving toward the lower
part of the chamber 8 are focused toward the central axis of the
mirror magnetic field, collide with the fast ions and neutral
particles generated by the collision of the fast ions, and lose
energy and charge and become neutral particles. The neutral
particles existing in the lower part of the chamber are charged by
the charging unit 17 again, and further guided to the lower part of
the chamber 8 by the influence of the magnetic field.
[0036] Here, experiments by the inventors have confirmed that many
of the particles generated from plasma generated by the combination
of the carbon dioxide laser and the tin target are neutral
nanoparticles having diameters of several to several tens of
nanometers. The target material has an initial speed of about 100
m/sec and has initial momentum. Accordingly, the generated
nanoparticles similarly hold the initial momentum. The generated
nanoparticles are focused toward the central axis in the downward
direction of the chamber because of the initial output momentum and
the deflection and focusing effect of the magnetic field while
diffusing due to pressure at plasma generation.
[0037] The residual droplets are relatively large particles having
diameters of several micrometers or more and relatively large
masses, and therefore, when charged, are relatively hard to deflect
with the magnetic field. However, the residual droplets also hold
the initial momentum. Further, since the residual droplets have
relatively large masses, the diffusion speed following the plasma
generation is lower than that of neutral particles. Therefore, the
residual droplets also move toward the lower part of the
chamber.
[0038] As explained above, most of the debris of fast ions, neutral
particles, residual droplets, and so on following the plasma
generation are focused toward the lower part of the chamber and are
caught. Accordingly, the amount of these debris colliding with and
attached to the structures within the chamber is small and the
deterioration in the function as the EUV light source is
prevented.
[0039] The debris moving toward the lower part of the chamber move
to an exhaust path 20. In the exhaust path 20, the debris are
guided to an exhaust chamber 22 connected to the chamber 8 by a
debris exhaust TMP (turbo molecular pump) 21. The debris guided to
the exhaust chamber 22 hold momentum necessary to move toward the
lower part of the chamber. Further, the debris pass through a
debris passage hole 24 of a catching chamber 23 formed in the lower
part of the exhaust chamber 22 and reach the catching chamber 23
because of the momentum and gravity. As shown in FIG. 1, the debris
passage hole 24 is formed in a funnel shape for collecting the
debris at the center of the catching chamber 23 and preventing
attachment of the debris to the wall surfaces of the catching
chamber 23.
[0040] A collecting unit 25 is provided under the catching chamber
23. The collecting unit 25 has a gate valve 26, an evacuating unit
27, a collecting container connecting part 28, and a collecting
container 29. The catching chamber 23 is connected to the
collecting container 29 provided under the collecting unit 25 via
the gate valve 26. When the amount of debris caught in the catching
chamber 23 reaches a certain amount, the gate valve 26 is opened
after the interior of the collecting container 29 communicating
with the gate valve 26 is evacuated to vacuum by the evacuating
unit 27. Thereby, the debris caught in the catching chamber 23 drop
into the collecting container 29. Then, the gate valve 26 is closed
and the air is introduced into the collecting container 29 by using
a leak valve (not shown). The debris can be taken out by detaching
the collecting container 29 from the collecting container
connecting part 28. The collecting container 29 can be connected to
the collecting container connecting part 28 and used again by
cleaning the collecting container 29 after the debris are taken out
of the collecting container 29. The amount of deposited debris may
be detected by measuring the time of emitting the target material
and/or the times of plasma generation by a timer, counter, or the
like (not shown).
[0041] As explained above, according to the embodiment, almost all
of the fast ions, neutral particles, and residual droplets
generated following the EUV light generation can be collected
during operation of the EUV light source. Therefore, the
contamination of the chamber is reduced and the intervals of
chamber cleaning operation can be greatly increased. Thereby, the
operation time of the EUV light source required at a practical
level can be achieved.
[0042] Next, referring to FIG. 2, the second embodiment of the
present invention will be explained. In the second embodiment, the
operation from plasma generation to immediately before introduction
of debris to an exhaust path 30 is the same as the operation in the
first embodiment. The debris of neutral particles, residual
droplets, and so on collected in the lower part of the chamber 8
are guided to an exhaust chamber 32 under the chamber in the
exhaust path 30 by a debris exhaust TMP (turbo molecular pump) 31
through a hole of a skimmer 18. The pressure in the exhaust chamber
32 is kept lower than the pressure within the chamber 8 by the
debris exhaust TMP 31. The diameter of the hole of the skimmer 18
is several tens of micrometers to several millimeters. The diameter
of the hole of the skimmer 18 is determined so that the residual
droplets having the largest size among the products from the plasma
can pass through. The sizes of the residual droplets change
according to the target droplets and laser intensity. In the
embodiment, for example, the diameter of the target droplets is 20
.mu.m, the laser intensity is 10.sup.9 W/cm.sup.2 or less, and the
diameter of the hole of the skimmer 18 is 100 .mu.m. Further, as
shown in FIG. 2, the shape of the skimmer 18 is preferably formed
in a conical shape downwardly projecting. This is for focusing the
caught debris toward the central axis as far as from the walls of
the exhaust chamber 32. The debris guided to the exhaust chamber 32
hold momentum necessary for moving toward the lower part of the
chamber. The debris reach a catching and reaction chamber 33
through a debris passage hole 35 of a partition wall 34 formed in
the upper part of the catching and reaction chamber 33 provided
under the exhaust chamber 32 due to the momentum, gravity and the
pressure difference when passing through the skimmer 18 and are
caught. Further, the exhaust chamber 32 is constantly kept at the
lower pressure than that of the chamber 8 by the skimmer 18, a
reactive gas is prevented from diffusing in the chamber 8, which
will be explained later.
[0043] The catching and reaction chamber 33 is filled with a
reactive gas that reacts with the target material and generates a
gas product at a certain pressure. The reactive gas is supplied by
a reactive gas supply unit 38. When tin (Sn) is used as the target
material, the catching and reaction chamber 33 is filled with
hydrogen gas (H.sub.2) at the atmospheric pressure at the normal
temperature, for example, and the tin reacts with the hydrogen gas
and SnH.sub.4 gas is generated. The SnH.sub.4 gas is generated
because the boiling point of SnH.sub.4 is -52.degree. C. at the
atmospheric pressure. Within the catching and reaction chamber 33,
when the debris of tin are exposed to the reactive gas in
sufficient time, all of the tin debris react with hydrogen to be
SnH.sub.4, and gasified. The pressure within the catching and
reaction chamber 33 is higher than the pressure within the exhaust
chamber, and a gas flow from the catching and reaction chamber 33
to the exhaust chamber 32 is generated.
[0044] FIG. 3 shows the partition wall 34 seen from above. As shown
in FIG. 2, the debris passage hole 35 is formed at the center of
the partition wall 34, and exhaust gas vent holes 36 are formed on
the outer circumference part of the partition wall 34. As shown in
FIG. 2, the partition wall 34 is formed in a conical shape. The
debris in the exhaust chamber 32 move through the debris passage
hole 35 to the catching and reaction chamber 33, react with the
reactive gas to be gasified into a reaction product gas in the
catching and reaction chamber 33, pass through the exhaust gas vent
holes 36 into the exhaust chamber 32, and are exhausted by the
debris exhaust TMP 31.
[0045] In the partition wall 34 shown in FIG. 3, the opening
sectional area of the exhaust gas vent holes 36 formed on the outer
circumference part is set sufficiently larger than the opening
sectional area of the debris passage hole 35. The ratio of the
opening sectional area of the exhaust gas vent holes 36 to the
opening sectional area of the debris passage hole 35 and the whole
pressure loss are determined such that the catching and reaction
chamber 33 is kept at certain pressure by the reactive gas and the
sufficient pressure difference is kept between the catching and
reaction chamber 33 and the exhaust chamber 32. On the other hand,
the amount of flow of the reactive gas from the debris passage hole
35 is a very small value, and the debris can move through the
debris passage hole 35 to the catching and reaction chamber 33. The
magnitude relation in pressure among the respective chambers is
such that (pressure of the catching and reaction chamber
33)>(pressure within the chamber)>(pressure of the exhaust
chamber). In this manner, the debris can be caught while the
reactive gas prevents the debris from diffusing in the chamber.
[0046] The reactive gas and the reaction product gas containing
SnH.sub.4 guided to the exhaust chamber 32 are guided to a
collecting unit 45 by the debris exhaust TMP 31. The collecting
unit 45 has a diluting unit 46, an exhausting unit 47, and a
removing unit 48. The reactive gas and the reaction product gas
guided to the exhaust chamber 32 are first guided to the diluting
unit 46 of the collecting unit 45 by the debris exhaust TMP 31. It
is difficult to treat the reactive gas and the reaction product gas
guided to the exhaust chamber 32 as they are by the removing unit
48 and so on at the downstream, and the reactive gas and the
reaction product gas are diluted with an inert gas in the diluting
unit 46 for easy removing treatment in the removing unit 48 and so
on at the downstream. As a dilution gas, nitrogen (N.sub.2), helium
(He), argon (Ar), or the like is used. The diluted reactive gas and
reaction product gas are guided through the exhausting unit 47 to
the removing unit 48. The exhausting unit 47 includes a pump for
sending the diluted gas to the removing unit 48. Further, in the
removing unit 48, the reaction product gas is removed from the
light source apparatus by absorption or further reaction, and
thereby, the debris can be collected.
[0047] In the removing unit 48, the reactive gas and the reaction
product gas containing SnH.sub.4 are absorbed by activated carbon
filtration or the like. Accordingly, the reactive gas and the
reaction product gas containing the target material hardly flow out
of the removing unit 48. Instead of activated carbon filtration,
the reactive gas and the reaction product gas may be absorbed by
another material such as a foam metal or functional ceramics beads,
for example. Further, the reactive gas and the reaction product gas
containing SnH.sub.4 may be allowed to chemically react with
another material by oxidization or reduction for easy
collecting.
[0048] In the second embodiment of the present invention, since the
debris are allowed to react with the reactive gas and collected as
the reaction product gas, the degree of freedom of choice regarding
the transportation and treatment of the gasified debris is great.
For example, the collecting operation can be performed even when
the units 47, 48 at the downstream of the diluting unit 46 are
provided outside of a clean room where the EUV light source
apparatus is installed. Thereby, the clean room can be prevented
from contaminating by the collected debris.
[0049] Next, referring to FIG. 4, the third embodiment of the
present invention will be explained. The third embodiment of the
present invention is the same as the second embodiment of the
present invention shown in FIG. 2 in the configuration to the
exhaust chamber 32, and FIG. 4 only shows the skimmer 18 and the
downstream side of the third embodiment of the present invention,
which differ from those of the second embodiment of the present
invention. In the third embodiment of the present invention, a
collecting unit 55 has a diluting unit 56, an exhausting unit 57, a
removing unit 58, and an exhausting unit 59, and is connected to a
catching and reaction chamber 53 and a debris exhaust TMP 51. That
is, the diluting unit 56 and the exhausting unit 57 are connected
to the catching and reaction chamber 53, and the reactive gas and
the reaction product gas containing SnH.sub.4 are diluted by the
diluting unit 56 and sent to the removing unit 58 by the exhausting
unit 57. The exhaust gas from the debris exhaust TMP 51 is also
sent to the removing unit 58 via the exhausting unit 59. This is
because the flow of the reactive gas and the reaction product gas
from the catching and reaction chamber 53 into the exhaust chamber
32 is unavoidable for maintaining the pressure balance, and the
reactive gas and the reaction product gas from the reaction chamber
53 via the exhaust chamber 32 to the debris exhaust TMP 51 can not
completely be eliminated.
[0050] As explained above, in the third embodiment of the present
invention, the amount of the reactive gas and the reaction product
gas exhausted by the debris exhaust TMP 51 can be reduced. Since
the amount of exhausted gas by the debris exhaust TMP 51 is
reduced, the lower capacity of the debris exhaust TMP 51 can be
available and the cost can be reduced. Although the total number of
exhausting units is increased, the price of a typical pump is a
fraction of the price of the TMP, and the effect of the reduced
cost due to the lower capacity of the debris exhaust TMP 51 is
great.
[0051] Next, referring to FIG. 5, the fourth embodiment of the
present invention will be explained. The fourth embodiment of the
present invention has a similar configuration to that of the second
embodiment of the present invention, however, a heating unit 65 is
provided in a catching and reaction chamber 63. That is, by heating
the catching and reaction chamber 63, the reaction time taken for
reaction of the debris and the reactive gas can be reduced and the
reaction product gas can be efficiently generated from the debris.
The heating unit 65 may be configured by providing a heater on the
outer wall of the catching and reaction chamber 63, or providing an
infrared lamp or plasma source.
[0052] Further, in the fourth embodiment of the present invention,
the temperatures of the debris, the reactive gas, and the reaction
product gas can be raised by heating the catching and reaction
chamber 63, and the kinds of the usable reactive gas can be
increased. FIG. 6 is a table of boiling points of reaction products
of, for example, halogen gases (not the hydrogen gas) and tin at
one atmosphere.
[0053] The reactive gas is heated in advance and the temperature of
the reaction product as a result of the reaction with tin is equal
to or more than the boiling point, and thereby, the debris can be
extracted as the reaction product gas. Regarding the
turbo-molecular pump, one that can be used at a high temperature of
several hundreds of degrees C. has been developed, however, in
practice, a reaction product having a boiling point of 250.degree.
C. or less is used. For example, chlorine or bromine is used as a
reactive gas and allowed to react with tin debris, and thereby, the
tin debris can be extracted as reaction product gas SnCl.sub.4 or
SnBr.sub.4. The hydrogen gas is highly explosive, reaching the
explosion limit at concentration of 4%, and carries risks.
Accordingly, the control of hydrogen concentration is essential in
the whole exhaust system, and there are many restrictions in
configuration of the exhaust system. For example, using chlorine or
bromine, the restrictions in use of hydrogen can be eliminated.
[0054] Next, referring to FIG. 7, the fifth embodiment of the
present invention will be explained. In the fifth embodiment of the
present invention, a switching valve 70 is provided between the
exhaust path in which the reactive gas exists and the chamber 8,
and the exhaust path and the chamber 8 are constantly partitioned
by the switching valve 70. The operation from laser generation to
debris collection is the same as that in the first to fourth
embodiments of the present invention. Note that, in the fifth
embodiment of the present invention, since the exhaust path and the
chamber are constantly partitioned by the switching valve 70, the
skimmer is not the essential configuration requirement of the
embodiment and the skimmer may be omitted.
[0055] In the fifth embodiment of the present invention, plural
exhaust paths may be provided. As shown in FIG. 7, the embodiment
will be explained by taking the case where two exhaust path "A" 71a
and exhaust path "B" 71b are provided as an example. The debris
focused toward the axis in the lower part of the chamber pass the
switching valve 70 and the exhaust path "B" 71b and reach a TMP "B"
72b. Here, the debris are deposited on the blades and wall surfaces
within the TMP "B" 72b. When debris in an amount equal to or more
than a certain amount are deposited on the blades and wall surfaces
of the TMP, the amount of exhaust flow of the TMP becomes lower.
Accordingly, by detecting the emission time of the target material
and the times of plasma generation using a timer or counter, the
switching valve 70 is switched and connected to a new exhaust path
before the amount of exhaust flow of the TMP becomes lower.
[0056] While the debris in the lower part of the chamber are caught
through the exhaust path "B" 71b to the TMP "B" 72b, in the exhaust
path "A" 71a, the debris deposited in the TMP "A" 72a react with a
reactive gas supplied from a reactive gas supply unit 73a and is
gasified and a reaction product gas is generated. The reaction
product gas is guided to a collecting unit 75a, and collected via a
diluting unit 76a, an exhausting unit 77a by a removing unit 78a in
the collecting unit 75a. Thereby, the TMP "A" 72a can be recycled
and reused. In this regard, the reaction of the debris and the
reactive gas may be accelerated by heating the exhaust path "A" 71a
and/or the TMP "A" 72a with a heating unit. Further, in place of
hydrogen, chlorine, bromine, or the like may be used as the
reactive gas. When the reaction treatment of debris is ended and
the TMP "A" 72a becomes reusable, the reactive gas supply is
stopped and the diluting unit 76a is stopped. If the heating unit
has been used, the heating unit is also stopped. Note that the
exhausting unit 77a is not stopped but continuously operated as a
back-pressure pump.
[0057] When the valve 70 is switched, the debris in the lower part
of the chamber is guided to the exhaust path "A" 71a in which the
debris treatment has been ended and the TMP "A" 72a becomes
recyclable and reusable, and deposited in the TMP "A" 72a.
Concurrently, the reactive gas is guided to the exhaust path "B"
71b and the TMP "B" 72b in which the debris have been deposited and
reaction treatment of the debris and accompanying recycle of the
TMP "B" 72b are performed, and the TMP "B" 72b becomes reusable. In
this regard, the reaction treatment of debris may be promoted using
a heating unit. By repeatedly performing the operation, the EUV
light source apparatus can be continuously operated while
collecting the debris.
[0058] In the fifth embodiment of the present invention, an
advantage that the operation of depositing and accumulating the
debris and the operation of gasifying and exhausting and collecting
the debris can be concurrently and independently performed is
obtained. Further, in the embodiment, unlike the second to fourth
embodiments, there is no need to achieve the pressure balance among
the chamber, the exhaust chamber, and the reaction chamber, and
there is no restriction of pressure and temperature necessary for
maintaining the pressure balance with respect to the reactive gas.
Accordingly, the pressure and temperature of the reactive gas can
be set to the most suitable condition for causing the debris
deposited in the TMP for gasification.
[0059] Referring to FIG. 8, the sixth embodiment of the present
invention will be explained. The basic configuration of the sixth
embodiment of the present invention is the same as the
configuration of the second embodiment, but different in magnetic
field arrangement. That is, the diameter of a lower coil 86 of an
electromagnet is made larger than the diameter of an upper coil 85.
Thereby, the magnetic field in the lower part of the chamber is
smaller than the magnetic field in the upper part of the chamber,
and the charged particles move toward the lower part of the chamber
by the effect of the magnetic fields and removing of the charged
particles is promoted. The basic operation of the embodiment is the
same as the operation of the second embodiment, however, the
collection efficiency of the debris in the lower part of the
chamber can be improved because the magnetic field arrangement is
changed.
[0060] Next, referring to FIG. 9, the seventh embodiment of the
present invention will be explained. In the embodiment, as the
target, a wire target is used in place of the droplet target. As
shown in FIG. 9, the embodiment will be explained by taking the
case of using a wire target 1b in place of the droplet target in
the first embodiment as an example. When the wire target is used, a
wire formed from a tin material may be introduced by a wire target
moving unit (not shown) into the chamber and a laser may be always
applied to a new surface of the wire by continuously sliding the
wire. Further, a coated wire may be formed by coating the laser
application surface with tin and used as a target. Using the coated
wire, the strength of the target base material becomes easily held
and the mechanical strength of the target can be held. Furthermore,
FIG. 10 shows a modified example of the coated wire target. In a
coated wire target 91 shown in FIG. 10, a groove 93 is formed in
the laser application part of a target base material 92, the groove
93 part is coated with tin, and thereby, the coated wire target 91
is formed.
[0061] The operation and effect of the seventh embodiment of the
present invention are the same as the operation and effect of the
first embodiment, however, greatly different in the following point
from the operation and effect of the first embodiment. That is,
using the wire target 1b, specifically, the tin-coated wire 91, the
residual droplets on which the influence of the magnetic field
hardly act can be reduced. This is because the volume of tin flying
due to application can be minimized by making the thickness of the
tin coating nearly equal to the thickness that is removed by
abrasion with a carbon dioxide laser. In the case of using the
droplet target usually having a spherical shape, the whole volume
of the tin in the deeper part than the thickness flying due to
laser application becomes residual droplets. On the other hand, in
the case of using the tin-coated wire 91, generation of the
residual droplets can be reduced by setting the thickness of the
tin coating to a suitable value. If the residual droplets are
reduced, most of the rest of the debris become minute particles,
and the collection efficiency of the debris by the magnetic field
is dramatically increased by charging the minute particles.
* * * * *