U.S. patent application number 13/251663 was filed with the patent office on 2012-07-19 for semiconductor processing system and methods using capacitively coupled plasma.
This patent application is currently assigned to Applied Materials, Inc.. Invention is credited to Xinglong Chen, Kien N. Chuc, Qiwei Liang, Dmitry Lubomirsky, Matthew L. Miller, Shankar Venkataraman, Jang-Gyoo Yang.
Application Number | 20120180954 13/251663 |
Document ID | / |
Family ID | 46489871 |
Filed Date | 2012-07-19 |
United States Patent
Application |
20120180954 |
Kind Code |
A1 |
Yang; Jang-Gyoo ; et
al. |
July 19, 2012 |
SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY
COUPLED PLASMA
Abstract
Substrate processing systems are described that have a
capacitively coupled plasma (CCP) unit positioned inside a process
chamber. The CCP unit may include a plasma excitation region formed
between a first electrode and a second electrode. The first
electrode may include a first plurality of openings to permit a
first gas to enter the plasma excitation region, and the second
electrode may include a second plurality of openings to permit an
activated gas to exit the plasma excitation region. The system may
further include a gas inlet for supplying the first gas to the
first electrode of the CCP unit, and a pedestal that is operable to
support a substrate. The pedestal is positioned below a gas
reaction region into which the activated gas travels from the CCP
unit.
Inventors: |
Yang; Jang-Gyoo; (San Jose,
CA) ; Miller; Matthew L.; (Newark, CA) ; Chen;
Xinglong; (San Jose, CA) ; Chuc; Kien N.;
(Cupertino, CA) ; Liang; Qiwei; (Fremont, CA)
; Venkataraman; Shankar; (San Jose, CA) ;
Lubomirsky; Dmitry; (Cupertino, CA) |
Assignee: |
Applied Materials, Inc.
Santa Clara
CA
|
Family ID: |
46489871 |
Appl. No.: |
13/251663 |
Filed: |
October 3, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61433633 |
Jan 18, 2011 |
|
|
|
Current U.S.
Class: |
156/345.34 ;
118/723E; 118/723ER; 156/345.33 |
Current CPC
Class: |
H01J 37/3244 20130101;
H01J 37/32091 20130101; H01J 37/32568 20130101; C23C 16/45565
20130101; H01J 37/32532 20130101; H05H 1/24 20130101; H01J 37/32357
20130101; H01L 21/02274 20130101; H01J 37/32541 20130101; H01J
37/32449 20130101; H01J 37/32422 20130101; H01J 37/32724 20130101;
C23C 16/45585 20130101 |
Class at
Publication: |
156/345.34 ;
156/345.33; 118/723.E; 118/723.ER |
International
Class: |
C23F 1/02 20060101
C23F001/02; C23C 16/458 20060101 C23C016/458; C23C 16/455 20060101
C23C016/455; C23C 16/50 20060101 C23C016/50 |
Claims
1. A substrate processing system comprising: a capacitively coupled
plasma (CCP) unit positioned inside a process chamber, wherein the
CCP unit comprises a plasma excitation region formed between a
first electrode and a second electrode, and wherein the first
electrode comprises a first plurality of openings to permit a first
gas to enter the plasma excitation region, and the second electrode
comprises a second plurality of openings to permit an activated gas
to exit the plasma excitation region; a gas inlet for supplying the
first gas to the first electrode of the CCP unit; and a pedestal
that is operable to support a substrate, wherein the pedestal is
positioned below a gas reaction region into which the activated gas
travels from the CCP unit.
2. The system of claim 1, wherein the system further comprises a
showerhead positioned between the second electrode of the CCP unit
and the gas reaction region above the pedestal, wherein the
showerhead comprises a first plurality of showerhead channels that
permit passage of the activated gas to the gas reaction region, and
a second plurality of channels that permit passage of a second gas
to the gas reaction region.
3. The system of claim 2, wherein the second plurality of openings
in the second electrode are concentrically aligned with the first
plurality of showerhead channels.
4. The system of claim 1, wherein the system further comprises one
or more second gas inlets positioned between the second electrode
and the pedestal, wherein the second gas inlets supply a second gas
to the gas reaction region.
5. The system of claim 1, wherein the system further comprises a
remote plasma system coupled to the gas inlet and operable to
excite the first gas entering the process chamber through the gas
inlet.
6. The system of claim 1, wherein the activated gas comprises at
least one reactive radical.
7. A substrate processing system comprising: a gas inlet for
supplying a first gas to a processing chamber; an electrode
comprising a plurality of openings; a showerhead comprising a first
plurality of channels that permit the passage of an activated gas
to a gas reaction region in the processing chamber, and a second
plurality of channels that permit passage of a second gas to the
gas reaction region, wherein the activated gas is formed in a
plasma excitation region between the electrode and the showerhead,
which also acts as a second electrode; and a pedestal that is
operable to support a substrate, wherein the pedestal is positioned
below the gas reaction region.
8. The system of claim 7, wherein the first plurality of channels
in the showerhead suppresses plasma in the plasma excitation region
from entering the gas reaction region, while permitting the
activated gas to pass through the showerhead.
9. The system of claim 7, wherein the system further comprises a
one or more second gas inlets positioned between the showerhead and
the pedestal, wherein the second gas inlets supply a second gas to
the gas reaction region.
10. The system of claim 7, wherein the system further comprises a
remote plasma system coupled to the gas inlet and operable to
excite the first gas entering the process chamber through the gas
inlet.
11. A substrate processing system comprising: a gas inlet for
supplying a first gas to a processing chamber; an electrode
comprising a first plurality of openings; an ion suppressor
comprising an electrically conductive plate having a second
plurality of openings that permit the passage of an activated gas
to a gas reaction region in the processing chamber, wherein the
activated gas is formed in a plasma excitation region between the
electrode and the ion suppressor; and a pedestal that is operable
to support a substrate, wherein the pedestal is positioned below
the gas reaction region.
12. The system of claim 11, wherein the system further comprises a
showerhead positioned between the ion suppressor and the
pedestal.
13. The system of claim 11, wherein the system further comprises a
remote plasma system coupled to the gas inlet and operable to
excite the first gas entering the process chamber through the gas
inlet.
14. The system of claim 11, wherein the system comprises an
electrical power supply coupled to the electrode and the ion
suppressor, wherein the power supply is operable to create an
adjustable bias voltage in the ion suppressor to adjust an ion
concentration in the activated gas passing from the plasma
excitation region to the gas reaction region
Description
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application is a nonprovisional of, and claims the
benefit of the filing date of, U.S. Provisional Patent Application
No. 61/433,633, entitled "SEMICONDUCTOR PROCESSING SYSTEM AND
METHODS USING CAPACITIVELY COUPLED PLASMA, filed Jan. 18, 2011, the
entire disclosure of which is incorporated herein by reference for
all purposes.
BACKGROUND OF THE INVENTION
[0002] Plasma deposition and etching processes for fabricating
semiconductor integrated circuits have been in wide use for
decades. These processes typically involve the formation of a
plasma from plasma-generating gases that are exposed to electric
fields of sufficient power inside the processing chamber to cause
the gases to ionize. The temperatures needed to form these gases
into plasmas can be much lower than needed to thermally ionize the
same gases. Thus, plasma generation processes can be used to
generate reactive radical and ion species from the starting gases
at significantly lower chamber processing temperatures than is
possible by simply heating the gases. This allows the plasma to
deposit and/or etch materials from substrate surfaces without
raising the substrate temperature above a threshold that will melt,
decompose, or otherwise damage materials on the substrate.
[0003] Exemplary plasma deposition processes include
plasma-enhanced chemical vapor deposition (PECVD) of dielectric
materials such as silicon oxide on exposed surfaces of a substrate
wafer. Conventional PECVD involves the mixing together of gases
and/or deposition precursors in the processing chamber and striking
a plasma from the gases to generate reactive species that react and
deposit material on the substrate. The plasma is typically
positioned close to the exposed surface of the substrate to
facilitate the efficient deposition of the reaction products.
[0004] Similarly, plasma etching processes include exposing
selected parts of the substrate to plasma activated etching species
that chemically react and/or physically sputter materials from the
substrate. The removal rates, selectivity, and direction for the
plasma etched materials can be controlled with adjustments to the
etchant gases, plasma excitation energy, and electrical bias
between the substrate and charged plasma species, among other
parameters. Some plasma techniques, such as high-density plasma
chemical vapor deposition (HDP-CVD), rely on simultaneous plasma
etching and deposition to create features on the substrate.
[0005] While plasma environments are generally less destructive to
substrates than high-temperature deposition environments, they
still create fabrication challenges. Etching precision can be a
problem with energetic plasmas that over-etch shallow trenches and
gaps. Energetic species in the plasmas, especially ionized species,
can create unwanted reactions in a deposited material that
adversely affect the material's performance. Thus, there is a need
for systems and methods to provide more precise control over the
plasma components that make contact with a substrate wafer during
fabrication.
BRIEF SUMMARY OF THE INVENTION
[0006] Systems and methods are described for improved control of
the environment between a plasma and the surfaces of a substrate
wafer that are exposed to plasma and/or its effluents. The improved
control may be realized at least in part by an ion suppression
element positioned between the plasma and the substrate that
reduces or eliminates the number of ionically-charged species that
reach the substrate. Adjusting the concentration of ion species
that reach the substrate surface allows more precise control of the
etch rate, etch selectivity, and deposition chemistry (among other
parameters) during a plasma assisted etch and/or deposition on the
substrate.
[0007] In some examples, the ion suppression element may be part of
the gas/precursor delivery equipment of a substrate processing
chamber. For example, a showerhead positioned inside the chamber
between a plasma region and the substrate may act as both a
distribution component for gases and precursors as well as an ion
suppressor that reduces the amount of ionized species traveling
through the showerhead from the plasma region to the substrate. In
additional examples, the ion suppression element may be a partition
between the plasma region and the substrate that has one or more
openings through which plasma effluents may pass from the plasma
region to the substrate. The size, position and geometry of the
openings, the distance between the partition and the substrate, and
the electrical bias on the partition, among other characteristics,
may be selected to control the amounts of charged species reaching
the substrate. In some instances the partition may also act as an
electrode that helps generate and define the plasma region in the
processing chamber.
[0008] Embodiments of the invention include a substrate processing
system that has a capacitively coupled plasma (CCP) unit positioned
inside the process chamber. The CCP unit may include a plasma
excitation region formed between a first electrode and a second
electrode. The first electrode may include a first plurality of
openings to permit a first gas to enter the plasma excitation
region, and the second electrode may include a second plurality of
openings to permit an activated gas to exit the plasma excitation
region. The system may further include a gas inlet for supplying
the first gas to the first electrode of the CCP unit, and a
pedestal that is operable to support a substrate. The pedestal is
positioned below a gas reaction region into which the activated gas
travels from the CCP unit.
[0009] Embodiments of the invention further include additional
substrate processing systems. These systems may include a gas inlet
for supplying a first gas to a processing chamber, an electrode
comprising a plurality of openings, and a showerhead. The
showerhead may include a first plurality of channels that permit
the passage of an activated gas to a gas reaction region in the
processing chamber, and a second plurality of channels that permit
passage of a second gas to the gas reaction region. The activated
gas is formed in a plasma excitation region between the electrode
and the showerhead, which also acts as a second electrode. The
systems may further include a pedestal positioned below the gas
reaction region that is operable to support a substrate.
[0010] Embodiments of the invention still further include substrate
processing systems having an ion suppressor. These systems may
include a gas inlet for supplying a first gas to a processing
chamber, an electrode with a first plurality of openings, and the
ion suppressor. The ion suppressor may include an electrically
conductive plate having a second plurality of openings that permit
the passage of an activated gas to a gas reaction region in the
processing chamber. The activated gas is formed in a plasma
excitation region between the electrode and the ion suppressor.
These systems may further include a pedestal, positioned below the
gas reaction region, that is operable to support a substrate.
[0011] Additional embodiments and features are set forth in part in
the description that follows, and in part will become apparent to
those skilled in the art upon examination of the specification or
may be learned by the practice of the invention. The features and
advantages of the invention may be realized and attained by means
of the instrumentalities, combinations, and methods described in
the specification.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] A further understanding of the nature and advantages of the
present invention may be realized by reference to the remaining
portions of the specification and the drawings wherein like
reference numerals are used throughout the several drawings to
refer to similar components. In some instances, a sublabel is
associated with a reference numeral and follows a hyphen to denote
one of multiple similar components. When reference is made to a
reference numeral without specification to an existing sublabel, it
is intended to refer to all such multiple similar components.
[0013] FIG. 1 shows a simplified cross-sectional view of a
processing system that includes a processing chamber having CCP
unit and showerhead according to embodiments of the invention;
[0014] FIG. 2 shows a simplified perspective view of a processing
system that includes a processing chamber having a CCP unit and
showerhead according to embodiments of the invention;
[0015] FIG. 3 shows a simplified schematic of the gas flow paths of
a pair of gas mixtures through a processing system according to
embodiment of the invention;
[0016] FIG. 4 shows a simplified cross-sectional view of a
processing system that includes a processing chamber having a
showerhead that also acts as an ion suppression element;
[0017] FIG. 5 shows a simplified cross-sectional view of a
processing system that includes a processing chamber with an ion
suppression plate partitioning a plasma region from gas reaction
region according to embodiments of the invention;
[0018] FIG. 6A shows a simplified perspective view of an
ion-suppression element according to embodiments of the
invention;
[0019] FIG. 6B shows a simplified perspective view of a showerhead
that also act as an ion-suppression element according to
embodiments of the invention;
[0020] FIG. 7A shows some exemplary hole geometries for the
openings in an ion-suppression element according to embodiments of
the invention;
[0021] FIG. 7B shows a schematic of a hole geometry opening
according to embodiments of the invention; and
[0022] FIG. 8 shows an exemplary configuration of opposing openings
in a pair of electrodes that help define a plasma region in a
processing chamber according to embodiments of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0023] Systems and methods are described for the generation and
control of a plasma inside a semiconductor processing chamber. The
plasma may originate inside the processing chamber, outside the
processing chamber in a remote plasma unit, or both. Inside the
chamber, the plasma is contained and separated from the substrate
wafer with the help of an ion suppression element that is
positioned between the plasma and the substrate wafer. In some
instances, this ion suppression element may also function as part
of a plasma generation unit (e.g., an electrode), a gas/precursor
distribution system (e.g., a showerhead), and/or another component
of the processor system. In additional instances, the ion
suppression element may function primarily to define a partition
between a plasma generation region and a gas reaction region that
etches and/or deposits material on exposed surfaces of the
substrate wafer.
[0024] The ion suppression element functions to reduce or eliminate
the amount of ionically charged species traveling from the plasma
generation region to the substrate. Uncharged neutral and radical
species may still pass through the openings in the ion suppressor
to react with substrate. It should be noted that the complete
elimination of ionically charged species in the reaction region
surrounding the substrate is not always the desired goal. In many
instances, ionic species are required to reach the substrate in
order to perform the etch and/or deposition process. In these
instances, the ion suppressor helps control the concentration of
ionic species in the reaction region at a level that assists the
process.
[0025] Exemplary Processing System Configurations
[0026] Exemplary processing system configurations include an ion
suppressor positioned inside a processing chamber to control the
type and quantity of plasma excited species that reach the
substrate. In some embodiments the ion suppressor unit may be a
perforated plate that may also act as an electrode of the plasma
generating unit. In additional embodiments the ion suppressor may
be the showerhead that distributes gases and excited species to a
reaction region in contact with the substrate. In still more
embodiments ion suppression may be realized by a perforated plate
ion suppressor and a showerhead, both of which plasma excited
species pass through to reach the reaction region.
[0027] FIGS. 1 and 2 show simplified cross-sectional and
perspective views, respectively, of a processing system that
includes both an ion suppressor 110 as part of a capacitively
coupled plasma (CCP) unit 102 and a showerhead 104 that may also
contribute to ion suppression. The processing system may also
optionally include components located outside the processing
chamber 100, such as fluid supply system 114. The processing
chamber 100 may hold an internal pressure different than the
surrounding pressure. For example, the pressure inside the
processing chamber may be about 10 mTorr to about 20 Torr.
[0028] The CCP unit 102 may function to generate a plasma inside
the processing chamber 100. The components of the CCP unit 102 may
include a lid or hot electrode 106 and an ion suppression element
110 (also referred to herein as an ion suppressor). In some
embodiments, the lid 106 and ion suppressor 110 are electrically
conductive electrodes that can be electrically biased with respect
to each other to generate an electric field strong enough to ionize
gases between the electrodes into a plasma. An electrical insulator
108, may separate the lid 106 and the ion suppressor 110 electrodes
to prevent them from short circuiting when a plasma is generated.
The plasma exposed surfaces of the lid 106, insulator 108, and ion
suppressor 110 may define a plasma excitation region 112 in the CCP
unit 102.
[0029] Plasma generating gases may travel from a gas supply system
114 through a gas inlet 116 into the plasma excitation region 112.
The plasma generating gases may be used to strike a plasma in the
excitation region 112, or may maintain a plasma that has already
been formed. In some embodiments, the plasma generating gases may
have already been at least partially converted into plasma excited
species in a remote plasma system (not shown) positioned outside
the processing chamber 100 before traveling downstream though the
inlet 116 to the CCP unit 102. When the plasma excited species
reach the plasma excitation region 112, they may be further excited
in the CCP unit 102, or pass through the plasma excitation region
without further excitation. In some operations, the degree of added
excitation provided by the CCP unit 102 may change over time
depending on the substrate processing sequence and/or
conditions.
[0030] The plasma generating gases and/or plasma excited species
may pass through a plurality of holes (not shown) in lid 106 for a
more uniform delivery into the plasma excitation region 112.
Exemplary configurations include having the inlet 116 open into a
gas supply region 120 partitioned from the plasma excitation region
112 by lid 106 so that the gases/species flow through the holes in
the lid 106 into the plasma excitation region 112. Structural and
operational features may be selected to prevent significant
backflow of plasma from the plasma excitation region 112 back into
the supply region 120, inlet 116, and fluid supply system 114. The
structural features may include the selection of dimensions and
cross-sectional geometry of the holes in lid 106 that deactivates
backstreaming plasma, as described below in FIGS. 7A and 7B. The
operational features may include maintaining a pressure difference
between the gas supply region 120 and plasma excitation region 112
that maintains a unidirectional flow of plasma through the ion
suppressor 110.
[0031] As noted above, the lid 106 and the ion suppressor 110 may
function as a first electrode and second electrode, respectively,
so that the lid 106 and/or ion suppressor 110 may receive an
electric charge. In these configurations, electrical power (e.g.,
RF power) may be applied to the lid 106, ion suppressor 110, or
both. For example, electrical power may be applied to the lid 106
while the ion suppressor 110 is grounded. The substrate processing
system may include a RF generator 140 that provides electrical
power to the lid 106 and/or ion suppressor 110. The electrically
charged lid 106 may facilitate a uniform distribution of plasma
(i.e., reduce localized plasma) within the plasma excitation region
112. To enable the formation of a plasma in the plasma excitation
region 112, insulator 108 may electrically insulate lid 106 and ion
suppressor 110. Insulator 108 may be made from a ceramic and may
have a high breakdown voltage to avoid sparking The CCP unit 102
may further include a cooling unit (not shown) that includes one or
more cooling fluid channels to cool surfaces exposed to the plasma
with a circulating coolant (e.g., water).
[0032] The ion suppressor 110 may include a plurality of holes 122
that suppress the migration of ionically-charged species out of the
plasma excitation region 112 while allowing uncharged neutral or
radical species to pass through the ion suppressor 110 into an
activated gas delivery region 124. These uncharged species may
include highly reactive species that are transported with less
reactive carrier gas through the holes 122. As noted above, the
migration of ionic species through the holes 122 may be reduced,
and in some instances completely suppressed. Controlling the amount
of ionic species passing through the ion suppressor 110 provides
increased control over the gas mixture brought into contact with
the underlying wafer substrate, which in turn increases control of
the deposition and/or etch characteristics of the gas mixture. For
example, adjustments in the ion concentration of the gas mixture
can significantly alter its etch selectivity (e.g., SiOx:SiNx etch
ratios, Poly-Si:SiOx etch ratios, etc.). It can also shift the
balance of conformal-to-flowable of a deposited dielectric
material.
[0033] The plurality of holes 122 may be configured to control the
passage of the activated gas (i.e., the ionic, radical, and/or
neutral species) through the ion suppressor 110. For example, the
aspect ratio of the holes (i.e., the hole diameter to length)
and/or the geometry of the holes may be controlled so that the flow
of ionically-charged species in the activated gas passing through
the ion suppressor 110 is reduced. The holes in the ion suppressor
110 may include a tapered portion that faces the plasma excitation
region 112, and a cylindrical portion that faces the showerhead
104. The cylindrical portion may be shaped and dimensioned to
control the flow of ionic species passing to the showerhead 104. An
adjustable electrical bias may also be applied to the ion
suppressor 110 as an additional means to control the flow of ionic
species through the suppressor.
[0034] The showerhead 104 is positioned between the ion suppressor
110 of the CCP unit 102 and a gas reaction region 130 (i.e., gas
activation region) that makes contact with a substrate that may be
mounted on a pedestal 150. The gases and plasma excited species may
pass through the ion suppressor 110 into an activated gas delivery
region 124 that is defined between the ion suppressor 110 and the
showerhead 104. A portion of these gases and species may further
pass thorough the showerhead 104 into a gas reaction region 130
that makes contact with the substrate.
[0035] The showerhead may be a dual-zone showerhead that has a
first set of channels 126 to permit the passage of plasma excited
species, and a second set of channels that deliver a second
gas/precursor mixture into the gas reaction/activation region 130.
The two sets of channels prevent the plasma excited species and
second gas/precursor mixture from combining until they reach the
gas reaction region 130. In some embodiments, one or more of the
holes 122 in the ion suppressor 110 may be aligned with one or more
of the channels 126 in the showerhead 104 to allow at least some of
the plasma excited species to pass through a hole 122 and a channel
126 without altering their direction of flight. In additional
embodiments, the second set of channels may have an annular shape
at the opening facing the gas reaction region 130, and these
annular openings may be concentrically aligned around the circular
openings of the first set of channels 126.
[0036] The second set of channels in the showerhead 104 may be
fluidly coupled to a source gas/precursor mixture (not shown) that
is selected for the process to be performed. For example, when the
processing system is configured to perform a deposition of a
dielectric material such as silicon dioxide (SiO.sub.x) the
gas/precursor mixture may include a silicon-containing gas or
precursor such as silane, disilane, TSA, DSA, TEOS, OMCTS, TMDSO,
among other silicon-containing materials. This mixture may react in
gas reaction region 130 with an oxidizing gas mixture that may
include plasma excited species such as plasma generated radical
oxygen (O), activated molecular oxygen (O.sub.2) and ozone
(O.sub.3), among other species. Excessive ions in the plasma
excited species may be reduced as the species move through the
holes 122 in the ion suppressor 110, and reduced further as the
species move through the channels 126 in the showerhead 104. In
another example, when the processing system in configured to
perform an etch on the substrate surface, the source gas/precursor
mixture may include etchants such as oxidants, halogens, water
vapor and/or carrier gases that mix in the gas reaction region 130
with plasma excited species distributed from the first set of
channels in the showerhead 104.
[0037] The processing system may further include a power supply 140
electrically coupled to the CCP unit 102 to provide electric power
to the lid 106 and/or ion suppressor 110 to generate a plasma in
the plasma excitation region 112. The power supply may be
configured to deliver an adjustable amount of power to the CCP unit
102 depending on the process performed. In deposition processes for
example, the power delivered to the CCP unit 102 may be adjusted to
set the conformality of the deposited layer. Deposited dielectric
films are typically more flowable at lower plasma powers and shift
from flowable to conformal when the plasma power is increased. For
example, an argon containing plasma maintained in the plasma
excitation region 112 may produce a more flowable silicon oxide
layer as the plasma power is decreased from about 1000 Watts to
about 100 Watts or lower (e.g., about 900, 800, 700, 600, or 500
Watts or less), and a more conformal layer as the plasma power is
increased from about 1000 Watts or more (e.g., about 1000, 1100,
1200, 1300, 1400, 1500, 1600, 1700 Watts or more). As the plasma
power increases from low to high, the transition from a flowable to
conformal deposited film may be relatively smooth and continuous or
progress through relatively discrete thresholds. The plasma power
(either alone or in addition to other deposition parameters) may be
adjusted to select a balance between the conformal and flowable
properties of the deposited film.
[0038] The processing system may still further include a pedestal
150 that is operable to support and move the substrate (e.g., a
wafer substrate). The distance between the pedestal 150 and the
showerhead 104 help define the gas reaction region 130. The
pedestal may be vertically or axially adjustable within the
processing chamber 100 to increase or decrease the gas reaction
region 130 and effect the deposition or etching of the wafer
substrate by repositioning the wafer substrate with respect to the
gases passed through the showerhead 104. The pedestal 150 may have
a heat exchange channel through which a heat exchange fluid flows
to control the temperature of the wafer substrate. Circulation of
the heat exchange fluid allows the substrate temperature to be
maintained at relatively low temperatures (e.g., about -20.degree.
C. to about 90.degree. C.). Exemplary heat exchange fluids include
ethylene glycol and water.
[0039] The pedestal 150 may also be configured with a heating
element (such as a resistive heating element) to maintain the
substrate at heating temperatures (e.g., about 90.degree. C. to
about 1100.degree. C.). Exemplary heating elements may include a
single-loop heater element embedded in the substrate support
platter that makes two or more full turns in the form of parallel
concentric circles. An outer portion of the heater element may run
adjacent to a perimeter of the support platten, while an inner
portion may run on the path of a concentric circle having a smaller
radius. The wiring to the heater element may pass through the stem
of the pedestal.
[0040] FIG. 3 shows a simplified schematic 300 of the gas flow
paths of a pair of gas mixtures through a processing system that
includes both an ion suppressor plate and a showerhead. At block
305, a first gas, such as a plasma generating gas mixture, is
supplied to the processing chamber via a gas inlet. The first gas
may include one or more of the following gases: CF.sub.4, NH.sub.3,
NF.sub.3, Ar, He, H.sub.2O, H.sub.2, O.sub.2, etc. Inside the
processing chamber, the first gas may be excited through a plasma
discharge to form one or more plasma effluents at block 310.
Alternatively (or in addition to the in-situ plasma generation) a
remote plasma system (RPS) coupled to the processing chamber may be
used generate an ex-situ plasma whose plasma excitation products
are introduced into the process chamber. The RPS plasma excitation
products may include ionically-charged plasma species as well as
neutral and radical species.
[0041] Whether the plasma effluents are generated by an in-situ
plasma unit, an RPS unit, or both, they may be passed through an
ion suppressor in the processing chamber at block 315. The ion
suppressor may block and/or control the passage of ionic species
while allowing the passage of radical and/or neutral species as the
plasma activated first gas travels to the gas reaction region in
the processing chamber. At block 320, a second gas may be
introduced into the processing chamber. As noted above, the
contents of the second gas depend on the process performed: For
example, the second gas may include deposition compounds (e.g.,
Si-containing compounds) for deposition processes and etchants for
etch processes. Contact and reaction between the first and second
gases may be prevented until the gases arrive at the gas reaction
region of the process chamber.
[0042] One way to prevent the first and second gases from
interacting before the gas reaction region is to have them flow
though separate channels in a dual-zone showerhead. Block 330 shows
the activated first gas and second gas passing through a DZSH that
has a first plurality of channels that permit the activated first
gas to pass through the showerhead without interacting with the
second gas that passes through a second plurality of channels.
After exiting the DZSH, the first and second gases may mix together
in the gas reaction region of the processing chamber at block 335.
Depending on the process performed, the combined gases may react to
deposit a material on the exposed surfaces of the substrate, etch
materials from the substrate, or both.
[0043] Referring now to FIG. 4, a simplified cross-sectional view
of a processing system 400 having a showerhead 402 that also acts
as an ion suppression element is shown. In the configuration shown,
a first gas source for plasma generation 402 is fluidly coupled to
an optional RPS unit 404 where a first plasma may be generated and
the plasma effluents transported into the processing chamber 406
through gas inlet 408. Inside the processing chamber 406, the gases
may pass through holes 410 in a gas distribution plate 412 into a
gas region 414 defined between the plate 412 and showerhead 402. In
some embodiments, this region 414 may be a plasma
excitation/activation region where the gas distribution plate 412
and showerhead 402 act as first and second electrodes to further
excite the gas and/or generate the first plasma. The holes 410 in
the gas distribution plate 412 may be dimensionally or
geometrically structured to deactivate backstreaming plasma. The
plate 412 and showerhead 402 may be coupled with a RF power
generator 422 that supplies a charge to the plate 412 and
showerhead 402 to excite the gases and/or generate a plasma. In one
embodiment, the showerhead 402 is grounded while a charge is
applied to plate 412.
[0044] The excited gases or activated gases in the gas region 414
may pass through showerhead 402 into a gas reaction region 416
adjacent a substrate 418 to etch material from the surface of the
substrate and/or deposit material on the substrate's surface. The
showerhead 402 may be a dual zone showerhead (DZSH) that allows the
excited gases to pass form the gas region 414 into the gas reaction
region 416 while also allowing a second gas (i.e., precursor
gas/mixture) to flow from an external source (not shown) into the
gas reaction region 416 via a second gas inlet (not shown). The
DZSH may prevent the activated/excited gas from mixing with the
second gas until the gases flow into the gas reaction region
416.
[0045] The excited gas may flow through a plurality of holes 424 in
the DZSH, which may be dimensionally and/or geometrically
structured to control or prevent the passage plasma (i.e.,
ionically charged species) while allowing the passage of
activated/excited gases (i.e., reactive radical or uncharged
neutral species). FIG. 7A provides exemplary embodiments of hole
configurations that may be used in the DZSH. In addition to the
holes 424, the DZSH may include a plurality of channels 426 through
which the second gas flows. The second gas (precursor gas) may exit
the showerhead 402 through one or more apertures (not shown) that
are positioned adjacent holes 424. The DZSH may act as both a
second gas delivery system and an ion suppression element.
[0046] As described above, the mixed gases may deposit a material
on and/or etch the surface of the substrate 418, which may be
positioned on a platen 420. The platen 420 may be vertically
movable within the processing chamber 406. The processing of the
substrate 418 within the processing chamber 406 may be affected by
the configurations of the holes 424, the pressure within the gas
region 414, and/or the position of the substrate 418 within the
processing chamber. Further, the configuration of the holes 424
and/or pressure within the gas region 414 may control the amount of
ion species (plasma) allowed to pass into the gas excitation region
416. The ionic concentration of the gas mixture can shift the
balance of conformal-to-flowable of a deposited dielectric material
in addition to altering the etch selectivity.
[0047] Referring now to FIG. 5, a simplified cross-sectional view
of another processing system 500 having a plate 512 (i.e., ion
suppressor plate) that acts as an ion suppression element is shown.
In the configuration shown, a first gas source 502 is fluidly
coupled to an RPS unit 504 where a first plasma may be generated
and the plasma effluents transported into the processing chamber
506 through gas inlet 508. The plasma effluents may be transported
to a gas region 514 defined between the ion suppressor plate 512
and the gas inlet 508. Inside the gas region 514, the gases may
pass through holes 510 in the ion suppressor 512 into a gas
reaction/activation region 516 defined between the ion suppressor
512 and a substrate 528. The substrate 518 may be supported on a
platen 520 as described above so that the substrate is movable
within the processing chamber 506.
[0048] Also as described above, the holes 510 may be dimensionally
and/or geometrically structured so that the passage of ionically
charged species (i.e., plasma) is prevented and/or controlled while
the passage of uncharged neutral or radical species (i.e.,
activated gas) is permitted. The passage of ionic species may be
controllable by varying the pressure of the plasma within gas
region 514. The pressure in gas region 514 may be controlled by
controlling the amount of gas delivered through gas inlet 508. The
precursor gas (i.e., second gas) may be introduced into the
processing chamber 506 at one more second gas inlets 522 positioned
vertically below or parallel with ion suppressor 512. The second
gas inlet 522 may include one or more apertures, tubes, etc. (not
shown) in the processing chamber 506 walls and may further include
one or more gas distribution channels (not shown) to deliver the
precursor gas to the apertures, tubes, etc. In one embodiment, the
ion suppressor 512 includes one or more second gas inlets,
throughwhich the precursor gas flows. The second gas inlets of the
ion suppressor 512 may deliver the precursor gas into the gas
reaction region 516. In such an embodiment, the ion suppressor 512
functions as both an ion suppressor and a dual zone showerhead as
described previously. The activated gas that passes through the
holes 510 and the precursor gas introduced in the processing
chamber 506 may be mixed in the gas reaction chamber 516 for
etching and/or deposition processes.
[0049] Having now described exemplary embodiments of processing
chambers, attention is now directed to exemplary embodiments of ion
suppressors, such as ion suppressor plates 412 and 512 and
showerhead 402.
[0050] Exemplary Ion Suppressors
[0051] FIG. 6A shows a simplified perspective view of an
ion-suppression element 600 (ion suppressor) according to
embodiments of the invention. The ion suppression element 600 may
correspond with the ion suppressor plates of FIGS. 4 and/or 5. The
perspective view shows the top of the ion suppression element or
plate 600. The ion suppression plate 600 may be generally circular
shaped and may include a plurality of plasma effluent passageways
602, where each of the passageways 602 includes one or more through
holes that allow passage of the plasma effluents from a first
region (e.g., plasma region) to a second region (e.g., gas reaction
region or showerhead). In one embodiment, the through holes of the
passageway 602 may be arranged to form one or more circular
patterns, although other configurations are possible. As described
previously, the through holes may be geometrically or dimensionally
configured to control or prevent the passage of ion species while
allowing the passage or uncharged neutral or radical species. The
through holes may have a larger inner diameter toward the top
surface of the ion suppression plate 600 and a smaller inner
diameter toward the bottom surface of the ion suppression plate.
Further, the through holes may be generally cylindrical, conical,
or any combination thereof. Exemplary embodiments of the
configurations of the through holes are provided in FIGS. 7A-B.
[0052] The plurality of passageways may be distributed
substantially evenly over the surface of the ion suppression plate
600, which may provide even passage of neutral or radical species
through the ion suppression plate 600 into the second region. In
some embodiments, such as the embodiment of FIG. 5, the processing
chamber may only include an ion suppression plate 600, while in
other embodiments, the processing chamber may include both a ion
suppression plate 600 and a showerhead, such as the showerhead of
FIG. 6B, or the processing chamber may include a single plate that
acts as both a dual zone showerhead and an ion suppression
plate.
[0053] FIG. 6B shows a simplified bottom view perspective of a
showerhead 620 according to embodiments of the invention. The
showerhead 620 may correspond with the showerhead illustrated in
FIG. 4. As described previously, the showerhead 620 may be
positioned vertically adjacent to and above a gas reaction region.
Similar to ion suppression plate 600, the showerhead 620 may be
generally circular shaped and may include a plurality of first
holes 622 and a plurality of second holes 624. The plurality of
first holes 622 may allow plasma effluents to pass through the
showerhead 620 into a gas reaction region, while the plurality of
second holes 624 allows a precursor gas, such as a silicon
precursor, etchants etc., to pass into the gas reaction region.
[0054] The plurality of first holes 622 may be through holes that
extend from the top surface of the showerhead 620 through the
showerhead. In one embodiment, each of the plurality of first holes
622 may have a smaller inner diameter (ID) toward the top surface
of the showerhead 620 and a larger ID toward the bottom surface. In
addition, the bottom edge of the plurality of first holes 622 may
be chamfered 626 to help evenly distribute the plasma effluents in
the gas reaction region as the plasma effluents exit the showerhead
and thereby promote even mixing of the plasma effluents and
precursor gases. The smaller ID of the first holes 622 may be
between about 0.5 mm and about 20 mm. In one embodiment, the
smaller ID may be between about 1 mm and 6 mm. The cross sectional
shape of the first holes 622 may be generally cylindrical, conical,
or any combination thereof. Further, the first holes 622 may be
concentrically aligned with the through holes of passageways 602,
when both and ion suppression element 600 and a showerhead 620 are
used in a processing chamber. The concentric alignment may
facilitate passage of an activated gas through both the ion
suppression element 600 and showerhead 620 in the processing
chamber.
[0055] In another embodiment, the plurality of first holes may 622
be through holes that extend from the top surface of the showerhead
620 through the showerhead, where each of the first holes 622 have
a larger ID toward the top surface of the showerhead and a smaller
ID toward the bottom surface of the showerhead. Further, the first
holes 622 may include a taper region that transition between the
larger and smaller IDs. Such a configuration may prevent or
regulate the passage of a plasma through the through holes while
permitting the passage of an activated gas. Such embodiments may be
used in place or in addition to ion suppression element 600.
Exemplary embodiments of such through holes are provided in FIG.
7A.
[0056] The number of the plurality of first holes 622 may be
between about 60 and about 2000. The plurality of first holes 622
may also have a variety of shapes, but are generally round. In
embodiments where the processing chamber includes both a ion
suppression plate 600 and a showerhead 620, the plurality of first
holes 622 may be substantially aligned with the passageways 602 to
facilitate passage of the plasma effluents through the ion
suppression plate and showerhead.
[0057] The plurality of second holes 624 may extend partially
through the showerhead from the bottom surface of the showerhead
620 partially through the showerhead. The plurality of second holes
may be coupled with or connected to a plurality of channels (not
shown) that deliver the precursor gas (e.g., deposition compounds,
etchants, etc.) to the second holes 624 from an external gas source
(not shown). The second holes may include a smaller ID at the
bottom surface of the showerhead 620 and a larger ID in the
interior of the showerhead. The number of second holes 624 may be
between about 100 and about 5000 or between about 500 and about
2000 in different embodiments. The diameter of the second hole's
smaller ID (i.e., the diameter of the hole at the bottom surface)
may be between about 0.1 mm and about 2 mm. The second holes 624
are generally round and may likewise be cylindrical, conical, or
any combination thereof. Both the first and second holes may be
evenly distributed over the bottom surface of the showerhead 620 to
promote even mixing of the plasma effluents and precursor
gases.
[0058] With reference to FIG. 7A, exemplary embodiments of the
configurations of the through holes are shown. The through holes
depicted generally include a large inner diameter (ID) region
toward an upper end of the hole and a smaller ID region toward the
bottom or lower end of the hole. The smaller ID may be between
about 0.2 mm and about 5 mm. Further the aspect ratio of the holes
(i.e., the smaller ID to hole length) may be approximately 1 to 20.
Such configurations may substantially block and/or control passage
of ion species of the plasma effluent while allowing the passage of
radical or neutral species. For example, varying the aspect ratio
may regulate the amount of plasma that is allowed to pass through
the through holes. Plasma passage may further be regulated by
varying the pressure of the plasma within a region directly above
the through holes.
[0059] Referring now to specific configurations, through hole 702
may include a large ID region 704 at an upper end of the hole and a
small ID region 706 at a lower end of the hole with a stepped edge
between the large and small IDs. Through hole 710 may include a
large ID region 712 on an upper end and a large ID region 716 on a
lower end of the hole with a small ID region 714 therebetween. The
transition between the large and small ID regions may be stepped or
blunt to provide an abrupt transition between the regions.
[0060] Through hole 720 may include a large ID region 722 at the
upper end of the hole and small ID region 726 at a lower end of the
hole with a tapered region 724 that transitions at an angle .theta.
between the large and small regions. The height 728 of the small ID
region 726 may depend on the overall height 727 of the hole, the
angle .theta. of tapered region 724, the large ID, and the small
ID. In one embodiment, the tapered region 724 comprises an angle of
between about 15.degree. and about 30.degree., and preferably about
22.degree.; the overall height 727 is between about 4 mm and about
8 mm, and preferably about 6.35 mm; the large ID is between about 1
mm and about 4 mm, and preferably about 2.54 mm; the small ID is
between about 0.2 mm and 1.2 mm, and preferably about 0.89 mm, so
that the height 728 of the small ID region 726 region is between
about 1 mm and about 3 mm, and preferably about 2.1 mm.
[0061] Through hole 730 may include a first ID region 732 at the
upper end of the hole, a second ID region 734 concentrically
aligned with and positioned vertically below first ID region 732,
and a third ID region 736 concentrically aligned with and
positioned vertically below second ID region 734. First ID region
732 may comprise a large ID, second ID region 734 may comprise a
small ID, and third ID region 736 may comprise a slightly larger ID
than second ID region 734. Third ID region 736 may extend to the
lower end of the hole or may be outwardly tapered to an exit ID
737. The taper between the third ID region 736 and the exit ID 737
may taper at an angle .theta..sub.3, which may be between about
15.degree. and about 30.degree., and preferably about
22.degree..
[0062] The second ID region 734 may include a chamfered edge that
transitions from the first ID region 732 at an angle .theta..sub.1,
which may be between about 110.degree. and about 140.degree..
Similarly, the second ID region 734 may include a chamfered edge
that transitions into the third ID region 736 at an angle
.theta..sub.2, which may also be between about 110.degree. and
about 140.degree.. In one embodiment, the large ID of first region
732 may be between about 2.5 mm and about 7 mm, and preferably
about 3.8 mm; the small ID of second ID region 734 may be between
about 0.2 mm and about 5 mm, and preferably about 0.04 mm; the
slightly larger ID of third ID region 736 may be between about 0.75
mm and about 2 mm, and preferably about 1.1 mm; and the exit ID may
be between about 2.5 mm and about 5 mm, and preferably about 3.8
mm.
[0063] The transition (blunt, stepped, tapered, etc.) between the
large ID regions and small ID regions may substantially block the
passage of ion species from passing through the holes while
allowing the passage or radical or neutral species. For example,
referring now to FIG. 7B, shown is an enlarged illustration of
through hole 720 that includes the transition region 724 between
the large ID region 722 and the small ID region 726. The tapered
region 724 may substantially prevent plasma 725 from penetrating
through the through hole 702. For example, as the plasma 725
penetrates into the through hole 720, the ion species may
deactivate or ground out by contacting the walls of the tapered
region 724, thereby limiting the passage of the plasma through the
through hole and containing the plasma within the region above the
through hole 720. The radical or neutral species, however, may pass
through the through hole 720. Thus, the through hole 720 may filter
the plasma 720 to prevent or control the passage of unwanted
species. In an exemplary embodiment, the small ID region 726 of the
through holes comprises an ID of 1 mm or smaller. To maintain a
signification concentration of radical and/or neutral species
penetrating through the through holes, the length of the small ID
region and/or the taper angle may be controlled.
[0064] In addition to preventing the passage of plasma, the through
holes described herein may be used to regulate the passage of
plasma so that a desired level of plasma is allowed to pass through
the through hole. Regulating the flow of plasma through the through
holes may include increasing the pressure of the plasma in the gas
region above the ion suppressor plate so that a desired fraction of
the plasma is able to pass through the ion suppressor without
deactivating or grounding out.
[0065] Referring now to FIG. 8, a simplified illustration of a
capacitively coupled plasma (CCP) unit 800 is shown. Specifically,
the CCP unit 800 shown includes a top plate 802 and a bottom plate
804 that define a plasma generation region 810 in which a plasma is
contained. As previously described, the plasma may be generated by
an RPS (not shown) and delivered to the plasma generation region
810 via through hole 806. Alternatively or additionally, the plasma
may be generated in the CCP unit 800, for example, by utilizing top
plate 802 and bottom plate 804 as first and second electrodes
coupled to a power generation unit (not shown).
[0066] The top plate 802 may include a through hole 806 that allows
process gas and/or plasma to be delivered into the plasma
generation region 810 while preventing backstreaming of plasma
through the top plate 802. The through hole 806 may be configured
similar to through hole 730 having first, second, and third ID
regions (820, 822, and 824 respectively), with a chamfered edge
between adjacent regions (828 and 829) and a tapered region 826
transitioning between third ID region 824 and an exit ID. The
tapered region 826 between third ID region 824 and the exit ID
and/or the chamfered edge between second and third ID regions (822
and 824 respectively) may prevent backstreaming of plasma by
deactivating or grounding ion species as the plasma penetrates into
the through hole 806.
[0067] Similarly, the bottom plate 804 may include a through hole
808 that allows the radical or neutral species to pass through the
through hole while preventing or controlling the passage of ion
species. The through hole 808 may be configured similar to through
hole 720 having a large ID region 830, a small ID region 832, and a
tapered region 834 that transitions between the large ID region 830
and the small ID region 832. The tapered region 834 may prevent the
flow of plasma through the through hole 808 by deactivating or
grounding ion species as previously explained while allowing
radical or neutral species to pass therethrough.
[0068] To further prevent passage of the plasma through the through
holes, 802 and/or 804, the top plate 802 and/or bottom plate 804
may receive a charge to electrically bias the plasma and contain
the plasma within plasma generation region 810 and/or adjust an ion
concentration in the activated gas that passes through the bottom
plate. Using top plate 802 and bottom plate 804 in CCP unit 800,
the plasma may be substantially generated and/or maintained in the
plasma generation region 810, while radical and neutral species are
delivered to a gas reaction region to be mixed with one or more
precursor gases to etch material from or deposit material on a
substrate surface.
[0069] Having described several embodiments, it will be recognized
by those of skill in the art that various modifications,
alternative constructions, and equivalents may be used without
departing from the spirit of the invention. Additionally, a number
of well-known processes and elements have not been described in
order to avoid unnecessarily obscuring the present invention.
Accordingly, the above description should not be taken as limiting
the scope of the invention.
[0070] Where a range of values is provided, it is understood that
each intervening value, to the tenth of the unit of the lower limit
unless the context clearly dictates otherwise, between the upper
and lower limits of that range is also specifically disclosed. Each
smaller range between any stated value or intervening value in a
stated range and any other stated or intervening value in that
stated range is encompassed. The upper and lower limits of these
smaller ranges may independently be included or excluded in the
range, and each range where either, neither or both limits are
included in the smaller ranges is also encompassed within the
invention, subject to any specifically excluded limit in the stated
range. Where the stated range includes one or both of the limits,
ranges excluding either or both of those included limits are also
included.
[0071] As used herein and in the appended claims, the singular
forms "a", "an", and "the" include plural referents unless the
context clearly dictates otherwise. Thus, for example, reference to
"a process" includes a plurality of such processes and reference to
"the electrode opening" includes reference to one or more electrode
openings and equivalents thereof known to those skilled in the art,
and so forth.
[0072] Also, the words "comprise," "comprising," "include,"
"including," and "includes" when used in this specification and in
the following claims are intended to specify the presence of stated
features, integers, components, or steps, but they do not preclude
the presence or addition of one or more other features, integers,
components, steps, acts, or groups.
* * * * *