U.S. patent number 9,257,556 [Application Number 14/269,981] was granted by the patent office on 2016-02-09 for silicon germanium finfet formation by ge condensation.
This patent grant is currently assigned to QUALCOMM INCORPORATED. The grantee listed for this patent is QUALCOMM Incorporated. Invention is credited to Vladimir Machkaoutsan, Kern Rim, Stanley Seungchul Song, Jeffrey Junhao Xu, Choh Fei Yeap.
United States Patent |
9,257,556 |
Xu , et al. |
February 9, 2016 |
Silicon germanium FinFET formation by Ge condensation
Abstract
A method of forming a semiconductor fin of a FinFET device
includes conformally depositing an amorphous or polycrystalline
thin film of silicon-germanium (SiGe) on the semiconductor fin. The
method also includes oxidizing the amorphous or polycrystalline
thin film to diffuse germanium from the amorphous or
polycrystalline thin film into the semiconductor fin. Such a method
further includes removing an oxidized portion of the amorphous or
polycrystalline thin film.
Inventors: |
Xu; Jeffrey Junhao (San Diego,
CA), Machkaoutsan; Vladimir (Leuven, BE), Rim;
Kern (San Diego, CA), Song; Stanley Seungchul (San
Diego, CA), Yeap; Choh Fei (San Diego, CA) |
Applicant: |
Name |
City |
State |
Country |
Type |
QUALCOMM Incorporated |
San Diego |
CA |
US |
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Assignee: |
QUALCOMM INCORPORATED (San
Diego, CA)
|
Family
ID: |
52273600 |
Appl.
No.: |
14/269,981 |
Filed: |
May 5, 2014 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20150194525 A1 |
Jul 9, 2015 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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61923489 |
Jan 3, 2014 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
29/7851 (20130101); H01L 29/7848 (20130101); H01L
29/66795 (20130101); H01L 29/785 (20130101); H01L
29/1054 (20130101); H01L 29/7847 (20130101) |
Current International
Class: |
H01L
29/66 (20060101); H01L 29/10 (20060101); H01L
29/78 (20060101) |
Field of
Search: |
;257/192,401
;438/285 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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1519420 |
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Mar 2005 |
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EP |
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2011054776 |
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May 2011 |
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WO |
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2014099013 |
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Jun 2014 |
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WO |
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Other References
International Search Report and Written
Opinion--PCT/US2014/070579--ISA/EPO--Mar. 4, 2015. cited by
applicant.
|
Primary Examiner: Ho; Tu-Tu
Attorney, Agent or Firm: Seyfarth Shaw LLP
Parent Case Text
CROSS REFERENCE TO RELATED APPLICATION
The present disclosure claims the benefit of U.S. provisional
patent application No. 61/923,489, entitled "SILICON GERMANIUM
FINFET FORMATION BY GE CONDENSATION," filed on Jan. 3, 2014, the
disclosure of which is expressly incorporated by reference herein
in its entirety.
Claims
What is claimed is:
1. A method of forming a semiconductor fin of a FinFET device,
comprising: conformally depositing an amorphous or polycrystalline
thin film of silicon-germanium (SiGe) on the semiconductor fin;
oxidizing the amorphous or polycrystalline thin film to diffuse
germanium from the amorphous or polycrystalline thin film into the
semiconductor fin and into an interface between the semiconductor
fin and a substrate supporting the semiconductor fin; and removing
an oxidized portion of the amorphous or polycrystalline thin
film.
2. The method of claim 1, in which a compressive strain in the
semiconductor fin is greater than in the substrate supporting the
semiconductor fin.
3. The method of claim 2, in which the semiconductor fin is
substantially in a same crystal orientation as a surface of the
substrate.
4. The method of claim 3, in which the crystal orientation of the
semiconductor fin is the same before oxidizing the amorphous or
polycrystalline thin film as the crystal orientation of the
semiconductor fin is after oxidizing the amorphous or
polycrystalline thin film.
5. The method of claim 1, in which the semiconductor fin is
substantially single crystalline.
6. The method of claim 1, in which the conformally depositing
comprises a non-selective deposition on surfaces of a plurality of
different materials.
7. The method of claim 6, further comprising etching the thin film
to provide a SiGe spacer on the semiconductor fin.
8. The method of claim 7, in which the etching is anisotropic.
9. The method of claim 1, in which the conformally depositing
comprises a selective deposition on surfaces of the semiconductor
fin.
10. The method of claim 1, in which the semiconductor fin comprises
silicon germanium or silicon.
11. The method of claim 1, further comprising diffusing germanium
into a surface of the substrate supporting the semiconductor fin to
provide the interface between the semiconductor fin and the
substrate.
12. The method of claim 1, in which the FinFET device is integrated
into a mobile phone, a set top box, a music player, a video player,
an entertainment unit, a navigation device, a computer, a hand-held
personal communication systems (PCS) unit, a portable data unit,
and/or a fixed location data unit.
13. A fin field-effect transistor (FinFET) device on a substrate,
comprising: a semiconductor fin comprising a conformally deposited
amorphous or polycrystalline silicon-germanium (SiGe) thin film, in
which germanium from the amorphous or polycrystalline thin film is
diffused into the semiconductor fin and into an interface between
the semiconductor fin and the substrate.
14. The FinFET device of claim 13, in which a compressive strain in
the semiconductor fin is greater than in the substrate supporting
the semiconductor fin.
15. The FinFET device of claim 14, in which the semiconductor fin
is substantially in a same crystal orientation as a surface of the
substrate.
16. The FinFET device of claim 15, in which the crystal orientation
of the semiconductor fin is the same before oxidizing the amorphous
or polycrystalline thin film as the crystal orientation of the
semiconductor fin is after oxidizing the amorphous or
polycrystalline thin film.
17. The FinFET device of claim 13, in which the semiconductor fin
is substantially single crystalline.
18. The FinFET device of claim 13, in which a SiGe portion of the
semiconductor fin extends from a shallow trench isolation region of
the substrate and a silicon portion of the semiconductor fin
extends through the shallow trench isolation region of the
substrate.
19. The FinFET device of claim 13, in which a surface of the
substrate includes a portion of diffused germanium to provide the
interface between the semiconductor fin and the substrate.
20. The FinFET device of claim 13, in which the semiconductor fin
comprises silicon germanium or silicon.
21. The FinFET device of claim 13 integrated into a mobile phone, a
set top box, a music player, a video player, an entertainment unit,
a navigation device, a computer, a hand-held personal communication
systems (PCS) unit, a portable data unit, and/or a fixed location
data unit.
22. A method for forming a semiconductor fin of a FinFET device,
comprising: the step for conformally depositing an amorphous or
polycrystalline thin film of silicon-germanium (SiGe) on the
semiconductor fin; the step for oxidizing the amorphous or
polycrystalline thin film to diffuse germanium from the amorphous
or polycrystalline thin film into the semiconductor fin and into an
interface between the semiconductor fin and a substrate supporting
the semiconductor fin; and the step for removing an oxidized
portion of the amorphous or polycrystalline thin film.
23. The method of claim 22, in which the FinFET device is
integrated into a mobile phone, a set top box, a music player, a
video player, an entertainment unit, a navigation device, a
computer, a hand-held personal communication systems (PCS) unit, a
portable data unit, and/or a fixed location data unit.
24. A fin field-effect transistor (FinFET) device on a substrate,
comprising: means for conducting current, in which germanium from
an amorphous or polycrystalline silicon-germanium (SiGe) thin film
is diffused into the current conducting means and into an interface
between current conducting means and the substrate; and the
substrate coupled to the current conducting means.
25. The FinFET device of claim 24, in which a compressive strain in
the current conducting means is greater than in the substrate
coupled to the current conducting means.
26. The FinFET device of claim 24, integrated into a mobile phone,
a set top box, a music player, a video player, an entertainment
unit, a navigation device, a computer, a hand-held personal
communication systems (PCS) unit, a portable data unit, and/or a
fixed location data unit.
Description
BACKGROUND
1. Field
Aspects of the present disclosure relate to semiconductor devices,
and more particularly to silicon germanium (SiGe) use in fin-type
field-effect transistors (FinFETs).
2. Background
Silicon germanium (SiGe) has been widely reviewed as a promising
material for p-channel metal-oxide-semiconductor (PMOS) devices.
SiGe has an intrinsically higher hole mobility than silicon. In
standard field effect transistor (FET) geometries, imparting a
strain in semiconductor chip regions, such as the source and drain
regions of a FET, is common. In fin-type field-effect transistors
(FinFETs) structures, however, the volume of the fin available for
strain engineering is small. As fin geometries are reduced, such as
in ten (10) nanometer device designs, fabrication of SiGe fins
becomes expensive and difficult to achieve.
SUMMARY
A method of forming a semiconductor fin of a FinFET device may
include conformally depositing an amorphous or polycrystalline thin
film of silicon-germanium (SiGe) on the semiconductor fin. The
method also includes oxidizing the amorphous or polycrystalline
thin film to diffuse germanium from the amorphous or
polycrystalline thin film into the semiconductor fin. Such a method
further includes removing an oxidized portion of the amorphous or
polycrystalline thin film.
A fin-type field-effect transistor (FinFET) device on a substrate
includes a semiconductor fin. The semiconductor fin may be
comprised of a conformally deposited amorphous or polycrystalline
silicon-germanium (SiGe) thin film. The germanium from the
amorphous or polycrystalline silicon-germanium (SiGe) thin film may
be diffused into the semiconductor fin.
An FinFET device on a substrate includes means for conducting
current. The current conducting means may be comprised of a
conformally deposited amorphous or polycrystalline
silicon-germanium (SiGe) thin film. The germanium from the
amorphous or polycrystalline silicon-germanium (SiGe) thin film may
be diffused into the semiconductor fin.
This has outlined, rather broadly, the features and technical
advantages of the present disclosure in order that the detailed
description that follows may be better understood. Additional
features and advantages of the disclosure will be described below.
It should be appreciated by those skilled in the art that this
disclosure may be readily utilized as a basis for modifying or
designing other structures for carrying out the same purposes of
the present disclosure. It should also be realized by those skilled
in the art that such equivalent constructions do not depart from
the teachings of the disclosure as set forth in the appended
claims. The novel features, which are believed to be characteristic
of the disclosure, both as to its organization and method of
operation, together with further objects and advantages, will be
better understood from the following description when considered in
connection with the accompanying figures. It is to be expressly
understood, however, that each of the figures is provided for the
purpose of illustration and description only and is not intended as
a definition of the limits of the present disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
For a more complete understanding of the present disclosure,
reference is now made to the following description taken in
conjunction with the accompanying drawings.
FIGS. 1A-1D illustrate side views of a FinFET semiconductor
device.
FIGS. 2 through 6 illustrate side views of a FinFET semiconductor
device.
FIG. 7 illustrates a side view of a fin structure of a FinFET
semiconductor device according to one aspect of the present
disclosure.
FIG. 8 illustrates a side view of the fin structure of the FinFET
semiconductor device of FIG. 7 according to one aspect of the
present disclosure.
FIG. 9 illustrates a side view of the fin structure of the FinFET
semiconductor device of FIG. 8 according to one aspect of the
present disclosure.
FIGS. 10 and 11 illustrate side views of a fin structure of a
FinFET semiconductor device according to another aspect of the
present disclosure.
FIGS. 12A-12E illustrate side views of a fin structure of a FinFET
semiconductor device according to a further aspect of the present
disclosure.
FIG. 13 is a process flow diagram illustrating a method for
fabricating a silicon-germanium (SiGe) fin in a fin field effect
transistor (FinFET) according to an aspect of the present
disclosure.
FIG. 14 is a block diagram showing an exemplary wireless
communication system in which a configuration of the disclosure may
be advantageously employed.
FIG. 15 is a block diagram illustrating a design workstation used
for circuit, layout, and logic design of a semiconductor component
according to one configuration.
DETAILED DESCRIPTION
The detailed description set forth below, in connection with the
appended drawings, is intended as a description of various
configurations and is not intended to represent the only
configurations in which the concepts described herein may be
practiced. The detailed description includes specific details for
the purpose of providing a thorough understanding of the various
concepts. It will be apparent to those skilled in the art, however,
that these concepts may be practiced without these specific
details. In some instances, well-known structures and components
are shown in block diagram form in order to avoid obscuring such
concepts. As described herein, the use of the term "and/or" is
intended to represent an "inclusive OR", and the use of the term
"or" is intended to represent an "exclusive OR".
A high mobility conduction channel is desirable for high
performance transistors. Material selection and strain engineering
are design features that alter the mobility of charge carriers in
the channel of transistors. In metal-oxide-semiconductor (MOS)
field effect transistors (MOSFETs), strain engineering is used, but
in fin-based structures (FinFETs), the use of strained materials is
challenging. There are more free surfaces in FinFET structures, and
the source/drain volume available for strain engineering is small
compared to other FET geometries and techniques.
Silicon germanium (SiGe) is considered as a leading candidate for
ten (10) nanometer and smaller p-channel metal-oxide-semiconductor
(PMOS) devices. SiGe fin formation may include an etch or recess of
a silicon (Si) fin, followed by an epitaxial growth of SiGe in the
recess. A chemical-mechanical planarization (CMP) process may be
used to remove overgrown SiGe on the shallow trench isolation (STI)
material to form a SiGe fin. The cost of this process is high,
resulting in high cost FinFET devices.
Further, although a SiGe fin grown on a silicon template often
possesses uniaxial compressive stress along the fin length,
epitaxial growth of the SiGe fin involves a thermal anneal process
at temperatures exceeding 900 degrees Centigrade (C). The thermal
anneal process is performed at a high temperature (e.g.,
900.degree. C.) to enable curing of epitaxial growth defects. This
thermal anneal process, however, may relax the uniaxial stress in
the SiGe fin, which may reduce the hole mobility in the SiGe
channel.
Some described implementations relate to fin-type field-effect
transistors (FinFETs). FinFETs are double-gate devices. The two
gates of a FinFET may be shorted for higher performance or
independently controlled for lower leakage or reduced transistor
count. These FinFET features enable an improved design space. These
features also enable the use of FinFET devices in place of bulk
complementary metal-oxide-semiconductor (CMOS) devices at the
nanoscale. In one configuration, a semiconductor fin comprises a
conformally deposited amorphous or polycrystalline
silicon-germanium (SiGe) thin film. In this configuration, the
germanium from the amorphous or polycrystalline silicon-germanium
(SiGe) thin film is diffused into the semiconductor fin. In some
implementations, a silicon germanium (SiGe) FinFET device is
described. A compressive strain in the semiconductor fin may be
greater than in the substrate supporting the semiconductor fin. In
one configuration, the semiconductor fin is substantially in a same
crystal orientation as a surface of the substrate. In another
configuration, a FinFET device includes a SiGe spacer on the
semiconductor fin.
Various aspects of the disclosure provide techniques for
fabricating a semiconductor fin of a FinFET device. It will be
understood that the term "layer" includes film and is not to be
construed as indicating a vertical or horizontal thickness unless
otherwise stated. As described herein, the term "semiconductor
substrate" may refer to a substrate of a diced wafer or may refer
to the substrate of a wafer that is not diced. Similarly, the terms
wafer and die may be used interchangeably unless such interchanging
would tax credulity.
FIGS. 1A-1D illustrate side views of a FinFET semiconductor device.
FIG. 1A shows a substrate 100, an isolation material 102, and fin
structures 104. The substrate 100 may be a semiconductor material,
such as silicon (e.g., a silicon wafer). The isolation material 102
may be a shallow trench isolation (STI) material, such as silicon
oxide or silicon nitride, or other like materials. The fin
structures 104 may be crystalline, and may be a part of a single
crystal structure along with the substrate 100.
In related art approaches, the fin structures 104 are etched or
otherwise removed to create recesses 106 as shown in FIG. 1B. The
isolation material 102 serves as the form for the recesses 106. In
FIG. 1C, a material 108 is grown within the recesses 106, and may
be grown over a surface 110 of the isolation material 102. The
overgrowth of the material 108 is removed via etching or polishing
(e.g., CMP), to create the fin structure 112 shown in FIG. 1D. The
material 108 may be SiGe. When the material 108 is SiGe, the growth
across the substrate 100 and in the recesses 106 is of a uniform
percentage of germanium, which limits the number of voltage
thresholds of the devices on the substrate 100 using the material
108. Further, an interface 114 may have an abrupt boundary, which
may limit the minimum size of the fin structure 112.
Once the fin structures 104 are formed, as shown in FIG. 1D, the
fin structures 104 are annealed to reduce growth defects within the
fin structures 104. This annealing may take place at elevated
temperatures, such as temperatures over 900 degrees Centigrade,
which may relax the compressive strain along the length of the fin
structure 112. Reducing or relaxing the compressive strain along
the fin structure 112 reduces the carrier mobility in the fin
structure 112, and the advantages of using the material 108 in the
fin structure 112 are reduced as a result.
FIGS. 2 through 7 illustrate side views of a FinFET semiconductor
device in accordance with one or more aspects of the present
disclosure. FIG. 2 illustrates the fin structures 104, as single
crystal structures formed as part of the substrate 100, with the
isolation material 102 between the fin structures 104. FIG. 3
illustrates an etch 300, which etches the isolation material 102
instead of etching or removing the fin structures 104, as shown in
FIG. 1B. The etch 300 may be performed using a hydrofluoric acid
(HF) etch, or may be performed using a chemical wet/vapor etch
(CWE) process using other etchants. The fin structures 104 may be
of a first crystalline orientation, such as Miller Index (110),
whereas the substrate 100 may be a second crystalline orientation,
such as a (100) orientation.
FIG. 4 illustrates an epitaxial growth 400 of silicon germanium on
the fin structures 104. The epitaxial growth 400 grows on the fin
structures 104 and ends up growing in another crystal orientation,
such as the <111> orientation shown in FIG. 4, which is
undesirable for the fin structures 104. The different crystal
orientation of the epitaxial growth 400 changes the strain, which
may be a compressive strain, in the fin structures 104.
FIG. 5 illustrates an oxidation 500 of the epitaxial growth 400.
The oxidation 500, which may be a dry or wet oxidation, selectively
oxidizes the silicon-germanium. The silicon in the silicon
germanium epitaxial growth is oxidized, while the germanium is
driven into the fin structures 104.
FIG. 6 illustrates a fin structure of the related art. After the
oxidation 500, the oxide is removed from the fin structures 104.
Because of the oxidation 500 and/or the epitaxial growth 400,
however, the etching of the oxidized structure leaves a profile 600
that may be somewhat different than the fin structures 104.
Further, the amount of the germanium, as well as the dopant density
of the germanium, within the profile 600, may not be uniform and
may not be completely desirable for the devices in which the
profile 600 is used.
FIG. 7 illustrates a fin structure of a FinFET device according to
one aspect of the present disclosure. A thin film 700, which may be
a conformal thin film, is deposited or otherwise coupled to the fin
structures 104. Deposition of the thin film 700 may be performed in
a selective or non-selective manner. The fin structures 104 may be
silicon, or may be silicon-germanium, and may also be single
crystal structures. The fin structures may also have a similar
crystal structure to the substrate 100. In an aspect of the present
disclosure, the thin film 700 may be a polycrystalline or amorphous
silicon-germanium thin film. The thin film 700 may be deposited
using chemical vapor deposition (CVD), plasma doping, or other
methods without departing from the scope of the present
disclosure.
FIG. 8 illustrates processing of the fin structure in an aspect of
the present disclosure. An oxide 800 is formed. The oxide
selectively removes the silicon from the thin film 700, while
driving the germanium portion of the silicon-germanium into the fin
structures 104 to create a SiGe fin 802. The amount of the desired
materials (e.g., germanium) can be controlled for various ones of
the fin structures 104 to control the percentage of dopant atoms in
each of the SiGe fins 802. The control may be achieved through a
thickness of the thin film 700 that is deposited on the fin
structures 104, as well as through the time and/or temperature used
to create the oxide 800.
FIG. 9 illustrates a side view of the fin structure of the FinFET
semiconductor device of FIG. 8 according to one aspect of the
present disclosure. Representatively, the SiGe fin 802 is shown
after the oxide 800 is removed. The vertical walls of the SiGe fin
802 provide a more desirable shape than the profile 600. In
addition, because the amount and drive of the germanium into the
SiGe structure is more controlled than that described with respect
to FIGS. 2-6, the channels in the SiGe fin 802 may have higher
performance than fins with the profile 600.
Further, an interface 900, because it was formed from a single
crystal structure emanating from the substrate 100, is less abrupt
than the interface 114 shown with respect to FIGS. 1A-1D, and less
abrupt than an interface generated in the devices of FIGS. 2-6. The
gradient or gradual diffusion of the germanium into the SiGe fin
802 also allows germanium to diffuse into the substrate 100 below
the SiGe fin 802. In this configuration, the diffusion of germanium
into the substrate 100 below the SiGe fin 802 reduces the strain on
the interface 900 between the substrate 100 and the SiGe fin 802.
This allows for additional strain within the SiGe fin 802 without
unduly straining the interface 900.
In an aspect of the present disclosure, the SiGe fin 802 is
self-aligned to the fin structure 104. Further, as described above,
the concentration of dopant material (e.g., germanium) in the SiGe
fin 802 can be controlled using different doses of dopant material
in the thin film 700. As such, multiple dopant concentrations for
different type of devices on the same substrate 100 can be realized
in an aspect of the present disclosure. Further, one aspect of the
present disclosure provides a final fin structure that is less
expensive to produce than that of conventional SiGe FinFETs using
epitaxial growth.
FIGS. 10 and 11 illustrate side views of a fin structures 104 of a
FinFET semiconductor device according to another aspect of the
present disclosure. In FIG. 10, an etch 1000 may be performed on
the thin film 700 beginning from the structure shown in FIG. 7. The
etch 1000 may be an anisotropic etch, and as such the thin film 700
remains on the sides of the fin structures 104. The oxidation of
FIG. 8, when performed on the structure of FIG. 10, then drives the
germanium from the thin film only from the sides. Because there is
no germanium on the top of the fin structures 104 in this aspect of
the present disclosure, the SiGe fin 802 will either have oxidized
silicon on the exposed portion of the SiGe fin 802, or the SiGe fin
802 will be shorter (a smaller distance from the substrate 100)
than the fin structures 104. An oxide 1100 and the SiGe fin 802, as
formed in this aspect of the present disclosure, are shown in FIG.
11. The oxide 1100 may be removed by etching, chemical wet
polishing, or other methods if desired.
FIGS. 12A-12E illustrate side views of a fin structure 104 of a
FinFET semiconductor device according to a further aspect of the
present disclosure. FIG. 12A shows the incoming FinFET
semiconductor device including a fin structure 104 following a
recess etch of a shallow trench isolation region (STI) 102. In this
configuration, the fin structure 104 (e.g., silicon) extends from
and through the STI 102. The fin structure 104 is shown in a first
crystalline orientation (e.g., Miller Index (110)). In this
arrangement, a length 1220 of the fin structure 104 extending from
the STI 102 may be longer than a length 1230 of a final fin
structure 1202, as shown in FIG. 12E.
FIG. 12B shows the FinFET semiconductor device following a
conformal deposition of a thin film 700 on the STI 102 and the fin
structure 104 extending from the STI 102. In this aspect of the
present disclosure, the thin film 700 may be a polycrystalline or
amorphous silicon-germanium thin film. The thin film 700 may be
deposited using chemical vapor deposition (CVD), plasma doping, or
other methods without departing from the scope of the present
disclosure.
FIG. 12C shows the FinFET semiconductor device following etching of
the thin film 700 from the surface of the STI 102. Etching of the
thin film 700 from the STI 102 and a portion of the fin structure
104 forms a spacer 1210 of the thin film 700 (e.g.
silicon-germanium). In FIG. 12D, wet and dry oxidation of the
spacer 1210 may be performed to selectively oxidize to form an
oxide 1200 on the fin structure 104 and drive the thin film 700
into the fin structure. In FIG. 12E the oxide is removed to
complete formation of the final fin structure 1202. For example,
when the thin film 700 is comprised of silicon-germanium, the
germanium is driven into the fin structure 104 extending from the
STI 102 to form a silicon-germanium fin.
FIG. 13 is a process flow diagram illustrating a method 1300 for
fabricating a fin field effect transistor (FinFET) device according
to an aspect of the present disclosure. In block 1302, a conformal
amorphous or polycrystalline thin film of SiGe is deposited on the
semiconductor fin. For example, as shown in FIG. 7, a thin film
700, which may be a conformal thin film, is deposited or otherwise
coupled to the fin structures 104. In block 1304, the amorphous or
polycrystalline thin film is oxidized to diffuse germanium from the
amorphous or polycrystalline thin film into the semiconductor fin.
For example, as shown in FIG. 8, an oxide 800 is formed. The oxide
selectively removes the silicon from the thin film 700, while
driving the germanium portion of the silicon-germanium into the fin
structure 104 to create a SiGe fin 802. In block 1306, an oxidized
portion of the amorphous or polycrystalline thin film is removed.
For example, as shown in FIG. 9 the SiGe fin 802 is shown after the
oxide 800 is removed.
According to a further aspect of the present disclosure, a fin
field-effect transistor (FinFET) device on a substrate is
described. In one configuration, the device includes means for
conducting current, in which germanium from an amorphous or
polycrystalline silicon-germanium (SiGe) thin film is diffused into
the current conducting means. The current conducting means may be a
fin structure 104 or SiGe fin 802 as described in FIG. 8, or other
means. In another aspect, the aforementioned means may be any
module or any apparatus configured to perform the functions recited
by the aforementioned means.
FIG. 14 is a block diagram showing an exemplary wireless
communication system 1400 in which an aspect of the disclosure may
be advantageously employed. For purposes of illustration, FIG. 14
shows three remote units 1420, 1430, and 1450 and two base stations
1440. It will be recognized that wireless communication systems may
have many more remote units and base stations. Remote units 1420,
1430, and 1450 include IC devices 1425A, 1425C, and 1425B that
include the disclosed devices. It will be recognized that other
devices may also include the disclosed devices, such as the base
stations, switching devices, and network equipment. FIG. 14 shows
forward link signals 1480 from the base station 1440 to the remote
units 1420, 1430, and 1450 and reverse link signals 1490 from the
remote units 1420, 1430, and 1450 to base stations 1440.
In FIG. 14, remote unit 1420 is shown as a mobile telephone, remote
unit 1430 is shown as a portable computer, and remote unit 1450 is
shown as a fixed location remote unit in a wireless local loop
system. For example, the remote units may be mobile phones,
hand-held personal communication systems (PCS) units, portable data
units such as personal data assistants, GPS enabled devices,
navigation devices, set top boxes, music players, video players,
entertainment units, fixed location data units such as meter
reading equipment, or other devices that store or retrieve data or
computer instructions, or combinations thereof. Although FIG. 14
illustrates remote units according to the aspects of the
disclosure, the disclosure is not limited to these exemplary
illustrated units. Aspects of the disclosure may be suitably
employed in many devices, which include the disclosed devices.
FIG. 15 is a block diagram illustrating a design workstation used
for circuit, layout, and logic design of a semiconductor component,
such as the devices disclosed above. A design workstation 1500
includes a hard disk 1501 containing operating system software,
support files, and design software such as Cadence or OrCAD. The
design workstation 1500 also includes a display 1502 to facilitate
design of a circuit 1510 or a semiconductor component 1512 such as
a device in accordance with an aspect of the present disclosure. A
storage medium 1504 is provided for tangibly storing the design of
the circuit 1510 or the semiconductor component 1512. The design of
the circuit 1510 or the semiconductor component 1512 may be stored
on the storage medium 1504 in a file format such as GDSII or
GERBER. The storage medium 1504 may be a CD-ROM, DVD, hard disk,
flash memory, or other appropriate device. Furthermore, the design
workstation 1500 includes a drive apparatus 1503 for accepting
input from or writing output to the storage medium 1504.
Data recorded on the storage medium 1504 may specify logic circuit
configurations, pattern data for photolithography masks, or mask
pattern data for serial write tools such as electron beam
lithography. The data may further include logic verification data
such as timing diagrams or net circuits associated with logic
simulations. Providing data on the storage medium 1504 facilitates
the design of the circuit 1510 or the semiconductor component 1512
by decreasing the number of processes for designing semiconductor
wafers.
For a firmware and/or software implementation, the methodologies
may be implemented with modules (e.g., procedures, functions, and
so on) that perform the functions described herein. A
machine-readable medium tangibly embodying instructions may be used
in implementing the methodologies described herein. For example,
software codes may be stored in a memory and executed by a
processor unit. Memory may be implemented within the processor unit
or external to the processor unit. As used herein, the term
"memory" refers to types of long term, short term, volatile,
nonvolatile, or other memory and is not to be limited to a
particular type of memory or number of memories, or type of media
upon which memory is stored.
If implemented in firmware and/or software, the functions may be
stored as one or more instructions or code on a computer-readable
medium. Examples include computer-readable media encoded with a
data structure and computer-readable media encoded with a computer
program. Computer-readable media includes physical computer storage
media. A storage medium may be an available medium that can be
accessed by a computer. By way of example, and not limitation, such
computer-readable media can include RAM, ROM, EEPROM, CD-ROM or
other optical disk storage, magnetic disk storage or other magnetic
storage devices, or other medium that can be used to store desired
program code in the form of instructions or data structures and
that can be accessed by a computer; disk and disc, as used herein,
includes compact disc (CD), laser disc, optical disc, digital
versatile disc (DVD), floppy disk and Blu-ray disc where disks
usually reproduce data magnetically, while discs reproduce data
optically with lasers. Combinations of the above should also be
included within the scope of computer-readable media.
In addition to storage on computer readable medium, instructions
and/or data may be provided as signals on transmission media
included in a communication apparatus. For example, a communication
apparatus may include a transceiver having signals indicative of
instructions and data. The instructions and data are configured to
cause one or more processors to implement the functions outlined in
the claims.
Although the present disclosure and its advantages have been
described in detail, it should be understood that various changes,
substitutions and alterations can be made herein without departing
from the technology of the disclosure as defined by the appended
claims. For example, relational terms, such as "above" and "below"
are used with respect to a substrate or electronic device. Of
course, if the substrate or electronic device is inverted, above
becomes below, and vice versa. Additionally, if oriented sideways,
above and below may refer to sides of a substrate or electronic
device. Moreover, the scope of the present application is not
intended to be limited to the particular configurations of the
process, machine, manufacture, composition of matter, means,
methods and steps described in the specification. As one of
ordinary skill in the art will readily appreciate from the
disclosure, processes, machines, manufacture, compositions of
matter, means, methods, or steps, presently existing or later to be
developed that perform substantially the same function or achieve
substantially the same result as the corresponding configurations
described herein may be utilized according to the present
disclosure. Accordingly, the appended claims are intended to
include within their scope such processes, machines, manufacture,
compositions of matter, means, methods, or steps.
Those of skill would further appreciate that the various
illustrative logical blocks, modules, circuits, and algorithm steps
described in connection with the disclosure herein may be
implemented as electronic hardware, computer software, or
combinations of both. To clearly illustrate this interchangeability
of hardware and software, various illustrative components, blocks,
modules, circuits, and steps have been described above generally in
terms of their functionality. Whether such functionality is
implemented as hardware or software depends upon the particular
application and design constraints imposed on the overall system.
Skilled artisans may implement the described functionality in
varying ways for each particular application, but such
implementation decisions should not be interpreted as causing a
departure from the scope of the present disclosure.
The various illustrative logical blocks, modules, and circuits
described in connection with the disclosure herein may be
implemented or performed with a general-purpose processor, a
digital signal processor (DSP), an application specific integrated
circuit (ASIC), a field programmable gate array (FPGA) or other
programmable logic device, discrete gate or transistor logic,
discrete hardware components, or any combination thereof designed
to perform the functions described herein. A general-purpose
processor may be a microprocessor, but in the alternative, the
processor may be any conventional processor, controller,
microcontroller, or state machine. A processor may also be
implemented as a combination of computing devices, e.g., a
combination of a DSP and a microprocessor, multiple
microprocessors, one or more microprocessors in conjunction with a
DSP core, or any other such configuration.
The steps of a method or algorithm described in connection with the
disclosure may be embodied directly in hardware, in a software
module executed by a processor, or in a combination of the two. A
software module may reside in RAM, flash memory, ROM, EPROM,
EEPROM, registers, hard disk, a removable disk, a CD-ROM, or any
other form of storage medium known in the art. An exemplary storage
medium is coupled to the processor such that the processor can read
information from, and write information to, the storage medium. In
the alternative, the storage medium may be integral to the
processor. The processor and the storage medium may reside in an
ASIC. The ASIC may reside in a user terminal. In the alternative,
the processor and the storage medium may reside as discrete
components in a user terminal.
In one or more exemplary designs, the functions described may be
implemented in hardware, software, firmware, or any combination
thereof. If implemented in software, the functions may be stored on
or transmitted over as one or more instructions or code on a
computer-readable medium. Computer-readable media includes both
computer storage media and communication media including any medium
that facilitates transfer of a computer program from one place to
another. A storage media may be any available media that can be
accessed by a general purpose or special purpose computer. By way
of example, and not limitation, such computer-readable media can
include RAM, ROM, EEPROM, CD-ROM or other optical disk storage,
magnetic disk storage or other magnetic storage devices, or any
other medium that can be used to carry or store specified program
code means in the form of instructions or data structures and that
can be accessed by a general-purpose or special-purpose computer,
or a general-purpose or special-purpose processor. Also, any
connection is properly termed a computer-readable medium. For
example, if the software is transmitted from a website, server, or
other remote source using a coaxial cable, fiber optic cable,
twisted pair, digital subscriber line (DSL), or wireless
technologies such as infrared, radio, and microwave, then the
coaxial cable, fiber optic cable, twisted pair, DSL, or wireless
technologies such as infrared, radio, and microwave are included in
the definition of medium. Disk and disc, as used herein, includes
compact disc (CD), laser disc, optical disc, digital versatile disc
(DVD), floppy disk and Blu-ray disc where disks usually reproduce
data magnetically, while discs reproduce data optically with
lasers. Combinations of the above should also be included within
the scope of computer-readable media.
The previous description of the disclosure is provided to enable
any person skilled in the art to make or use the disclosure.
Various modifications to the disclosure will be readily apparent to
those skilled in the art, and the generic principles defined herein
may be applied to other variations without departing from the
spirit or scope of the disclosure. Thus, the disclosure is not
intended to be limited to the examples and designs described herein
but is to be accorded the widest scope consistent with the
principles and novel features disclosed herein.
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