U.S. patent number 10,358,738 [Application Number 15/269,628] was granted by the patent office on 2019-07-23 for gap fill process stability monitoring of an electroplating process using a potential-controlled exit step.
This patent grant is currently assigned to Lam Research Corporation. The grantee listed for this patent is Lam Research Corporation. Invention is credited to Shantinath Ghongadi, Zhian He, Quan Ma, Tariq Majid, Bryan Pennington, Jonathan David Reid.
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United States Patent |
10,358,738 |
Ma , et al. |
July 23, 2019 |
Gap fill process stability monitoring of an electroplating process
using a potential-controlled exit step
Abstract
Various embodiments herein relate to methods and apparatus for
electroplating metal on a substrate. In many cases, an
electroplating process may be monitored to ensure that it is
operating within a pre-defined processing window. This monitoring
may involve application of a controlled potential between the
substrate and a reference electrode after the electroplating
process is substantially complete (e.g., after recessed features on
the substrate are substantially filled). The current delivered to
the substrate during application of the controlled potential is
monitored, and a peak current is determined. This peak current,
often referred to herein as the potential-controlled exit peak
current, can be compared against an expected range to determine
whether the electroplating process is operating as desired.
Inventors: |
Ma; Quan (Tigard, OR),
Ghongadi; Shantinath (Tigard, OR), He; Zhian (Lake
Oswego, OR), Pennington; Bryan (Sherwood, OR), Majid;
Tariq (Wilsonville, OR), Reid; Jonathan David (Sherwood,
OR) |
Applicant: |
Name |
City |
State |
Country |
Type |
Lam Research Corporation |
Fremont |
CA |
US |
|
|
Assignee: |
Lam Research Corporation
(Fremont, CA)
|
Family
ID: |
61617888 |
Appl.
No.: |
15/269,628 |
Filed: |
September 19, 2016 |
Prior Publication Data
|
|
|
|
Document
Identifier |
Publication Date |
|
US 20180080140 A1 |
Mar 22, 2018 |
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C25D
17/001 (20130101); C25D 5/18 (20130101); H01L
21/2885 (20130101); H01L 21/76879 (20130101); C25D
21/12 (20130101); C25D 7/123 (20130101); H01L
21/76877 (20130101); C25D 17/10 (20130101); H01L
21/76898 (20130101); H01L 22/14 (20130101); H01L
22/26 (20130101); C25D 17/06 (20130101) |
Current International
Class: |
C25D
17/00 (20060101); C25D 5/18 (20060101); C25D
7/12 (20060101); C25D 21/12 (20060101); H01L
21/768 (20060101); C25D 17/06 (20060101); C25D
17/10 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Cohen; Brian W
Attorney, Agent or Firm: Weaver Austin Villeneuve &
Sampson LLP
Claims
What is claimed is:
1. A method of monitoring an electroplating process, the method
comprising: (a) immersing a substrate in an electrolyte, the
substrate comprising recessed features; (b) electroplating metal
into the recessed features on the substrate; (c) after the recessed
features are substantially filled with metal, monitoring a current
delivered to the substrate while applying a controlled potential
between the substrate and a reference electrode positioned in the
electrolyte; (d) determining a potential-controlled exit peak
current that corresponds to a maximum value of the current
delivered to the substrate during application of the controlled
potential during (c); and (e) comparing the potential-controlled
exit peak current to an expected range for the potential-controlled
exit peak current.
2. The method of claim 1, wherein (c) occurs while the substrate is
being removed from the electrolyte.
3. The method of claim 1, wherein the controlled potential applied
to the substrate during (c) is a constant potential.
4. The method of claim 1, further comprising: (f) in response to a
determination that the potential-controlled exit peak current is
outside of the expected range for the potential-controlled exit
peak current, inspecting an apparatus used to electroplate on the
substrate.
5. The method of claim 4, wherein inspecting the apparatus used to
electroplate on the substrate comprises inspecting a substrate
holder and/or an anode.
6. The method of claim 4, further comprising cleaning and/or
replacing a substrate holder and/or anode in the apparatus used to
electroplate on the substrate.
7. The method of claim 1, further comprising: (f) in response to a
determination that the potential-controlled exit peak current is
outside of the expected range for the potential-controlled exit
peak current, either (i) analyzing the electrolyte, (ii) refreshing
the electrolyte, or (iii) replacing the electrolyte.
8. The method of claim 1, further comprising: (f) in response to a
determination that the potential-controlled exit peak current is
within the expected range for the potential-controlled exit peak
current, providing a second substrate and electroplating on the
second substrate.
9. The method of claim 1, wherein during (c), the controlled
potential is applied between the substrate and the reference
electrode for a duration between about 5-100 milliseconds.
10. The method of claim 1, wherein during (c), the controlled
potential applied between the substrate and the reference electrode
has a magnitude between about 5-500 millivolts.
11. The method of claim 1, further comprising during (a), applying
a second controlled potential to the substrate, monitoring a
current delivered to the substrate during application of the second
controlled potential, determining a potential-controlled entry peak
current that corresponds to a maximum value of the current
delivered to the substrate during application of the second
controlled potential during (a), and comparing the
potential-controlled entry peak current to an expected range for
the potential-controlled entry peak current.
12. The method of claim 1, further comprising during (b) before the
features are substantially filled, applying a second controlled
potential to the substrate, monitoring a current delivered to the
substrate during application of the second controlled potential,
determining a potential-controlled probe peak current that
corresponds to a maximum value of the current delivered to the
substrate during application of the second controlled potential
during (b), and comparing the potential-controlled probe peak
current to an expected range for the potential-controlled probe
peak current.
13. The method of claim 1, wherein electroplating in (b) comprises
at least a first stage and a second stage, wherein during the first
stage, a first constant current is applied to the substrate, and
during the second stage, a second constant current is applied to
the substrate, the first current and second current being different
from one another.
14. The method of claim 1, wherein the substrate is provided with a
seed layer having a sheet resistance between about 0.1-200
ohm/sq.
15. The method of claim 1, further comprising monitoring a
potential between the substrate and an anode during (a), (b),
and/or (c).
16. The method of claim 1, further comprising monitoring a
potential between the reference electrode and an anode during (a),
(b), and/or (c).
17. The method of claim 1, wherein immersing the substrate in (a)
comprises: (i) applying a second controlled potential between the
substrate and the reference electrode and monitoring a current
delivered to the substrate during application of the second
controlled potential, (ii) when the current delivered to the
substrate during application of the second controlled potential
reaches a threshold current, ceasing application of the second
controlled potential and applying a current to the substrate,
wherein the current applied to the substrate during (ii) changes as
the substrate is immersed to thereby provide a uniform current
density to an immersed portion of the substrate.
18. The method of claim 1, further comprising: determining a
potential-controlled exit average current that corresponds to an
average value of the current delivered to the substrate during
application of the controlled potential during (c); and comparing
the potential-controlled exit average current to an expected range
for the potential-controlled exit average current.
Description
BACKGROUND
In integrated circuit manufacturing, a conductive material, such as
copper, is often deposited by electroplating onto a conductive seed
layer to fill one or more recessed features on the wafer substrate.
Electroplating is a method of choice for depositing metal into the
vias and trenches of the wafer during damascene processing, and is
also used to fill Through-Silicon Vias (TSVs), which are relatively
large vertical electrical connections used in 3D integrated
circuits and 3D packages. Electroplating may also be used to fill
through resist WLP structures.
SUMMARY
Certain embodiments herein relate to methods and apparatus for
monitoring an electroplating process using a potential-controlled
exit step. In various embodiments, a controlled potential may be
applied between a substrate and a reference electrode for a period
of time after the features on the substrate are substantially or
fully filled, in many cases while the substrate is being removed
from the electrolyte. The controlled potential may be a constant
potential. While the controlled potential is applied to the
substrate, a current delivered to the substrate is monitored and
recorded. In particular, a peak current delivered to the substrate
during application of the controlled potential may be recorded. In
some cases, an average current delivered to the substrate during
application of the controlled potential may also be recorded. The
peak and average current during this time are sensitive to a number
of factors including the condition of the various portions of the
apparatus (e.g., cup, electrical contacts, etc.), the
condition/composition of the electrolyte, and the condition of the
substrate. Therefore, deviations in the peak and/or average current
delivered to the substrate during the controlled potential step can
indicate that the electroplating process has strayed from
acceptable electroplating conditions. In some cases, a substrate
may be flagged for inspection when the peak and/or average current
delivered to the substrate during the controlled potential step is
outside of an expected tolerance range. If the flagged substrate
does not meet the relevant quality standards, it may be discarded.
Certain other potentials may be monitored and recorded, as well.
For instance, the potential between the substrate and the anode
and/or the potential between the anode and the reference electrode
may each be monitored and recorded. These potentials may provide
further information that may be used to diagnose a problem in cases
where the peak and/or average current is higher or lower than
expected.
In one aspect of the embodiments herein, a method of monitoring an
electroplating process is provided, the method including: (a)
immersing the substrate in electrolyte, the substrate including
recessed features; (b) electroplating metal into the recessed
features on the substrate; (c) after the recessed features are
substantially filled with metal, monitoring a current delivered to
the substrate while applying a controlled potential between the
substrate and a reference electrode positioned in the electrolyte;
(d) determining a potential-controlled exit peak current that
corresponds to a maximum value of the current delivered to the
substrate during application of the controlled potential during
(c); and (e) comparing the potential-controlled exit peak current
to an expected range for the potential-controlled exit peak
current. In certain embodiments, (c) occurs while the substrate is
being removed from the electrolyte. The controlled potential
applied to the substrate during (c) may be a constant
potential.
In some embodiments, the method may further include: (f) in
response to a determination that the potential-controlled exit peak
current is outside of the expected range for the
potential-controlled exit peak current, inspecting an apparatus
used to electroplate on the substrate. In some such cases,
inspecting the apparatus used to electroplate on the substrate
includes inspecting a substrate holder and/or an anode. In these or
other cases, the method may further include cleaning and/or
replacing a substrate holder and/or anode in the apparatus used to
electroplate on the substrate. In some implementations, the method
may further include: (f) in response to a determination that the
potential-controlled exit peak current is outside of the expected
range for the potential-controlled exit peak current, either (i)
analyzing the electrolyte, (ii) refreshing the electrolyte, or
(iii) replacing the electrolyte. In other cases, the method may
further include: (f) in response to a determination that the
potential-controlled exit peak current is within the expected range
for the potential-controlled exit peak current, providing a second
substrate and electroplating on the second substrate.
In certain embodiments, during (c), the controlled potential may be
applied between the substrate and the reference electrode for a
duration between about 5-100 milliseconds. In these or other
embodiments, during (c), the controlled potential applied between
the substrate and the reference electrode may have a magnitude
between about 5-500 millivolts.
The method may further include, during (a), applying a second
controlled potential to the substrate, monitoring a current
delivered to the substrate during application of the second
controlled potential, determining a potential-controlled entry peak
current that corresponds to a maximum value of the current
delivered to the substrate during application of the second
controlled potential during (a), and comparing the
potential-controlled entry peak current to an expected range for
the potential-controlled entry peak current. In these or other
cases, the method may further include during (b) before the
features are substantially filled, applying a second controlled
potential to the substrate, monitoring a current delivered to the
substrate during application of the second controlled potential,
determining a potential-controlled probe peak current that
corresponds to a maximum value of the current delivered to the
substrate during application of the second controlled potential
during (b), and comparing the potential-controlled probe peak
current to an expected range for the potential-controlled probe
peak current.
The electroplating process may occur in stages. In one example,
electroplating in (b) includes at least a first stage and a second
stage, where during the first stage, a first constant current is
applied to the substrate, and during the second stage, a second
constant current is applied to the substrate, the first current and
second current being different from one another. The substrate may
be provided with a seed layer having a sheet resistance between
about 0.1-200 ohm/sq. In some cases, the method may further include
monitoring a potential between the substrate and an anode during
(a), (b), and/or (c). In these or other cases, the method may
further include monitoring a potential between the reference
electrode and an anode during (a), (b), and/or (c).
In certain implementations, immersing the substrate in (a) may
include: (i) applying a second controlled potential between the
substrate and the reference electrode and monitoring a current
delivered to the substrate during application of the second
controlled potential, (ii) when the current delivered to the
substrate during application of the second controlled potential
reaches a threshold current, ceasing application of the second
controlled potential and applying a current to the substrate, where
the current applied to the substrate during (ii) changes as the
substrate is immersed to thereby provide a uniform current density
to an immersed portion of the substrate.
In some embodiments, the method may further include determining a
potential-controlled exit average current that corresponds to an
average value of the current delivered to the substrate during
application of the controlled potential during (c); and comparing
the potential-controlled exit average current to an expected range
for the potential-controlled exit average current.
In another aspect of the disclosed embodiments, an apparatus for
electroplating on a substrate is provided, the apparatus including:
an electroplating chamber; a substrate holder; an anode; a
reference electrode; a power supply electrically connected to the
substrate holder, the anode, and the reference electrode; and a
controller including executable instructions for: (a) immersing the
substrate in electrolyte; (b) electroplating metal into recessed
features on the substrate; (c) after the recessed features are
substantially filled with metal, monitoring a current delivered to
the substrate while applying a controlled potential between the
substrate and a reference electrode positioned in the electrolyte;
(d) determining a potential-controlled exit peak current that
corresponds to a maximum value of the current delivered to the
substrate during application of the controlled potential during
(c); and (e) comparing the potential-controlled exit peak current
to an expected range for the potential-controlled exit peak
current.
In various embodiments, (c) may occur while the substrate is being
removed from the electrolyte. The controlled potential applied to
the substrate during (c) may be a constant potential in certain
cases.
These and other features will be described below with reference to
the associated drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates a flow chart for a method of electroplating
material on a substrate according to certain embodiments.
FIG. 2 depicts a portion of an electroplating apparatus that may be
used to practice certain embodiments.
FIG. 3 shows a flow chart for a method of electroplating material
on a substrate according to a particular embodiment.
FIG. 4 presents a view of an electroplating apparatus according to
certain embodiments.
FIGS. 5 and 6 each illustrate an electroplating apparatus that
includes a number of electroplating modules and other features.
FIG. 7A is a graph illustrating the effect of substrate holder
condition on the potential-controlled exit peak current for
different seed layer thicknesses at a thin plating thickness.
FIG. 7B is a graph illustrating the effect of substrate holder
condition on the potential-controlled exit peak current for
different seed layer thicknesses at a thick plating thickness.
FIG. 7C is a graph illustrating the effect of substrate holder
condition on the potential-controlled probe peak current for
different seed layer thicknesses, where the potential-controlled
probe occurs during immersion.
FIG. 8 is a graph depicting the potential-controlled exit peak
current vs. plating thickness for certain copper films.
FIG. 9 is a graph showing the potential-controlled exit peak
current for several different electrolytes and seed
thicknesses.
DETAILED DESCRIPTION
In this application, the terms "semiconductor wafer," "wafer,"
"substrate," "wafer substrate," and "partially fabricated
integrated circuit" are used interchangeably. One of ordinary skill
in the art would understand that the term "partially fabricated
integrated circuit" can refer to a silicon wafer during any of many
stages of integrated circuit fabrication thereon. A wafer or
substrate used in the semiconductor device industry typically has a
diameter of 200 mm, or 300 mm, or 450 mm. Further, the terms
"electrolyte," "plating bath," "bath," and "plating solution" are
used interchangeably. The following detailed description assumes
the embodiments are implemented on a wafer. However, the
embodiments are not so limited. The work piece may be of various
shapes, sizes, and materials. In addition to semiconductor wafers,
other work pieces that may take advantage of the disclosed
embodiments include various articles such as printed circuit
boards, magnetic recording media, magnetic recording sensors,
mirrors, optical elements, micro-mechanical devices and the
like.
In the following description, numerous specific details are set
forth in order to provide a thorough understanding of the presented
embodiments. The disclosed embodiments may be practiced without
some or all of these specific details. In other instances,
well-known process operations have not been described in detail to
not unnecessarily obscure the disclosed embodiments. While the
disclosed embodiments will be described in conjunction with the
specific embodiments, it will be understood that it is not intended
to limit the disclosed embodiments.
Electrochemical deposition processes are commonly used for
metalizing an integrated circuit. Such processes often involve
depositing metal into trenches and vias that are pre-formed in
dielectric layers. In various cases, a thin metal diffusion-barrier
film may be deposited onto the surface of the substrate using
physical vapor deposition (PVD) or chemical vapor deposition (CVD).
On top of the metal diffusion-barrier film, a metal seed layer may
be optionally deposited. In some cases, the metal seed layer isn't
needed, and electroplating occurs directly on the metal
diffusion-barrier film. When used, the metal seed layer is often
copper, but may be other metals including, but not limited to,
cobalt, ruthenium, aluminum, etc. The metal seed layer may also be
an alloy of two or more metals. After deposition of the metal
diffusion-barrier film and the optional seed layer, the features
(e.g., vias and trenches) may be electrofilled with a desired fill
material using an electrochemical deposition process.
The electrochemical deposition process, often referred to as an
electroplating process, may be affected by a variety of factors and
conditions. For instance, the composition of the electrolyte can
have a significant impact on the electroplating behavior that will
be achieved. In many cases, the electrolyte includes a variety of
organic plating additives (e.g., accelerator, suppressor, leveler,
brightener, etc.) that may be used to promote a desired fill
behavior and/or film quality. Because certain additives may be
consumed during electroplating, it is useful to monitor the plating
process in a way that detects changes in the electrolyte
composition.
Similarly, the plating process can be significantly affected by the
condition of the electroplating apparatus. In some instances, a
portion of the electroplating apparatus may become caked with
material that may prevent the apparatus from functioning as
desired. In one example, a layer of dried-on electrolyte or other
undesired material may form on a substrate holder (often referred
to as a cup). The electrolyte may dry onto the substrate holder as
a result of failing to clean the substrate holder after use. In
some cases, electrolyte may dry onto a substrate holder despite the
fact that it was cleaned, which may indicate that the cleaning
process was unsuccessful or incomplete. In some cases, electrolyte
may dry onto a substrate holder before the substrate holder is due
for cleaning, for example as a result of a compromised seal that
permits electrolyte to contact the substrate holder in areas where
such contact is not desired. Dirty or otherwise compromised
substrate holders can affect the efficiency at which
current/potential can be applied to the substrate during
electroplating. The condition of the anode can similarly affect the
electroplating behavior. As such, the condition of the apparatus
has a substantial effect on the electroplating process.
Another factor that can affect an electroplating process is how the
substrate is initially immersed into the electrolyte. A number of
different immersion options are available. In many cases, the
substrate is tilted from horizontal before it is immersed in
electrolyte. This tilting can reduce the risk that bubbles will
become trapped under the surface of the substrate. The substrate
may also be rotated during immersion. The angle of immersion,
rotation speed, and duration of immersion can all affect the
electroplating process.
The way in which current and/or potential are applied to the
substrate during immersion (as well as during the electroplating
process) can also affect the electroplating results. In some cases,
often referred to as "cold" entry cases, no current or potential
are applied to the substrate while it is immersed. Instead, a
current may be applied to the substrate only after the substrate is
fully immersed in electrolyte. In some other cases, often referred
to as "hot" entry cases, a constant current may be applied to the
substrate during immersion. In hot entry cases, the leading edge of
the substrate typically experiences a very high current density
when it first contacts the electrolyte. This current density
decreases as additional surface area of the substrate is immersed.
In still other cases, often referred to as "potential-controlled"
or "potentiostatic" entry cases, a constant potential (or
non-constant but controlled potential) is applied between the
substrate and a reference electrode as the substrate is immersed.
As such, the newly immersed area of the substrate experiences a
constant voltage during immersion. In these potential-controlled
immersion cases, the current density delivered to the substrate is
significantly more constant/uniform over the course of immersion,
and over the face of the substrate, compared to other immersion
techniques. Potential-controlled immersion methods provide
significant benefits over hot entry and cold entry methods.
Potential-controlled immersion methods are further described in
U.S. Pat. Nos. 6,551,483 and 6,946,065, which are each herein
incorporated by reference in their entireties. In some embodiments,
the substrate may be immersed using a "potentiostatic triggered
current ramping" technique. At an initial stage of immersion, a
constant (or otherwise controlled) potential may be applied to the
substrate. When the current delivered to the substrate reaches a
threshold value, the controlled potential may be discontinued, and
a current may be applied to the substrate. This current may ramp up
from a lower initial current to a higher final current to provide a
uniform current density over the face of the substrate over the
course of immersion as additional substrate surface area is
immersed in electrolyte. The switch between the
potential-controlled and current ramping modes may occur relatively
early in the immersion process, for example when the substrate is
between about 2-10% immersed, as measured by surface area. Current
ramping techniques are further discussed in U.S. Pat. No.
9,385,035, which is herein incorporated by reference in its
entirety.
In cases where potential-controlled immersion is used, the
stability of the electroplating process can be monitored by
observing the peak current delivered to the substrate during the
potential-controlled step during immersion. This peak current is
sometimes referred to as the "potentiostatic entry peak current,"
and it can provide information about various plating conditions. A
number of different factors may cause the peak current to stray
outside of an expected tolerance range. For instance, in cases
where the substrate holder is undesirably caked with dried on
electrolyte, the potentiostatic entry peak current may be lower
than expected due to the increased resistance of the substrate
holder and the decreased efficiency at which current is delivered
to the substrate. Similarly, in cases where the electrolyte has
strayed from a desired composition (e.g., due to consumption or
degradation of organic plating additives), the potentiostatic entry
peak current may be higher or lower than expected. Other types of
electroplating problems can similarly cause the potentiostatic
entry peak current to stray from an expected tolerance range.
With the adoption of potentiostatic triggered current ramping
immersion techniques, the ability to monitor the peak current
experienced during immersion is effectively lost. While these
methods do involve an initial stage at which potentiostatic
conditions are applied, such conditions are typically applied for
only a short time, and are followed by ramping current conditions.
As such, in potentiostatic triggered current ramping entry cases,
the "peak current" experienced during immersion is not particularly
useful in terms of providing relevant information about the
electroplating conditions. Therefore, although potentiostatic
triggered current ramping immersion techniques are beneficial in
terms of achieving a very uniform current density over the face of
the substrate and over the course of immersion, such techniques
compromise the ability to monitor the electroplating conditions
over the course of several substrates. Such monitoring can be
useful for ensuring that an electroplating apparatus is operating
as desired, and can minimize the number of wafers that are
processed in undesirable conditions (e.g., by identifying when a
problem has occurred such that action can be taken before
additional wafers are processed under relatively poor plating
conditions). In order to effectively monitor an electroplating
process, new methods are needed.
In various embodiments herein, a controlled potential (sometimes a
constant potential) is applied to the substrate for a short time
period after the electroplating process is substantially complete,
while the substrate is being removed from electrolyte (or just
before the substrate is removed from electrolyte). This stage of
electroplating may be referred to as a potential-controlled exit
stage. During the potential-controlled exit stage, the current
delivered to the substrate is monitored and recorded. In
particular, the peak current delivered to the substrate during the
potential-controlled exit stage is recorded. This peak current is
sometimes referred to as the "potentiostatic exit peak current," or
the "potential-controlled exit peak current," and it provides
significant information about whether the electroplating process is
operating within a desired process window. Like the peak current
experienced during a potential-controlled (e.g., potentiostatic)
immersion stage, the peak current experienced during a
potential-controlled exit stage is sensitive to a number of factors
that affect the quality of the electroplating process. For
instance, the potential-controlled exit peak current is sensitive
to changes in electrolyte composition and to changes in the
condition of the electroplating apparatus, as discussed further
below. Therefore, by monitoring the potential-controlled exit peak
current, problems that arise with the electroplating process can be
flagged and addressed before additional substrates are processed in
sub-par electroplating conditions. Alternatively or in addition,
the average current delivered to the substrate during the
potential-controlled exit stage may be recorded, and this current
may be referred to as the "potentiostatic exit average current" or
the "potential-controlled exit average current." The average
current delivered to the substrate during this time may likewise
provide information about whether the electroplating process is
occurring as expected. Generally speaking, any of the methods
described herein that involve monitoring a "peak" current can,
alternatively or in addition, involve monitoring the average
current delivered to the substrate during the relevant timeframe
(e.g., during application of a controlled potential). The average
current may provide a more stable value over several substrates,
compared to the peak current. As such, it may be preferable in some
embodiments to measure the average current in addition to (or even
instead of, in certain cases) the peak current.
FIG. 1 provides a flowchart describing a method of electroplating
according to one embodiment. The method begins with operation 101,
where a substrate is immersed in electrolyte. The substrate may
include a plurality of recessed features (e.g., vias, trenches,
etc.) thereon, which may be lined with a seed layer. Any number of
different electrolyte compositions may be used, as desired for a
particular application. In some embodiments, the electrolyte may
have a composition and/or properties as shown in Table 1.
TABLE-US-00001 TABLE 1 Property Value Metal ion concentration
0.5-40 g/l Accelerator concentration 1-10 ml/l Suppressor
concentration 1-10 ml/l Leveler concentration 1-10 ml/l Halide ion
concentration 30-200 ppm pH 0-5 Temperature 12 to 35.degree. C.
Conductivity 3-70 mS/cm
As noted above, numerous options are available for immersing the
substrate. In various embodiments, the substrate may be tilted from
horizontal during immersion to reduce the likelihood that bubbles
will become trapped under the plating surface of the substrate. The
substrate may be rotated during immersion in some cases. The
substrate may experience cold entry conditions, hot entry
conditions, potentiostatic entry conditions, or potentiostatic
triggered current ramping conditions, as described above. Although
the potential-controlled exit monitoring techniques described
herein are especially useful in cases where potentiostatic
triggered current ramping conditions are used during immersion,
such techniques are useful/beneficial regardless of the immersion
method that is used.
In cases where hot entry conditions are used, the potential applied
to the substrate before and/or during immersion may be a slightly
cathodic potential. This refers to the potential applied to the
substrate with respect to a reference electrode positioned in the
electrolyte. The cathodic potential may be a constant cathodic DC
voltage having a value between about -5 millivolts to about -100
millivolts, for example about -10 millivolts in some cases.
Alternatively, the cathodic potential may be a pulsed, cathodic
voltage having a value between about -10 millivolts and about -500
millivolts, having a waveform period from about 0.1 milliseconds to
about 10 milliseconds, and a duty cycle from about 1% to about 50%.
The potential may be applied to the substrate for a duration
between about 0-5 seconds. Further details related to hot entry
methods are discussed in U.S. Pat. Nos. 6,551,483 and 6,946,065,
which are incorporated by reference above.
In cases where potentiostatic triggered current ramping conditions
are used, there are at least two stages during immersion. During
the first stage, a constant (or otherwise controlled) potential is
applied between the substrate and the reference electrode in the
electrolyte. This potential may be applied until the substrate is
between about 1-10% immersed (as calculated by surface area). The
potential may be a slightly cathodic potential. The potential may
be a constant cathodic DC voltage having a value between about -5
millivolts to about -100 millivolts, for example about -10
millivolts in some cases. In some cases, the potential may be a
pulsed, cathodic voltage having a value between about -10
millivolts and about -500 millivolts, having a waveform period from
about 0.1 milliseconds to about 10 milliseconds, and a duty cycle
from about 1% to about 50%. The current delivered to the substrate
is monitored during this constant (or otherwise controlled)
potential stage. When the current delivered to the substrate
reaches a threshold value, the applied potential between the
substrate and the reference electrode is discontinued, and a
current is applied to the substrate. This threshold current value
may be between about 0.1-10 Amps. The current applied to the
substrate starts at a relatively low value, e.g., between about
0.1-1 Amps, and rises until reaching a higher value, e.g., between
about 1-10 Amps. The current may rise continuously or in steps.
Generally, the current may increase in a way that provides a
substantially constant current density on the immersed portion of
the substrate. For instance, the current may rise relatively
quickly when the substrate is about half immersed (when the amount
of immersed substrate area is changing most dramatically), and may
rise relatively more slowly when the substrate is nearly entirely
immersed (when the amount of immersed surface area is not changing
as dramatically). The current ramping stage of the potentiostatic
triggered current ramping technique may continue until the
substrate is completely immersed. Further details related to
current ramping techniques are discussed in U.S. Pat. No.
9,385,035, which is incorporated by reference above.
After the substrate is immersed in electrolyte, the method
continues with operation 103 where material is electroplated onto
the substrate. In various embodiments, this may involve applying
current to the substrate to cause material to electroplate onto the
surface of the substrate. Any current profile may be used. In some
embodiments, operation 103 may occur in stages, with a different
(optionally constant) current applied to the substrate at each
stage. In one example, operation 103 involves (1) a first stage
during which no current or a low-level constant current (e.g., at a
current density between about 1-10 mA/cm.sup.2) is applied to the
substrate, (2) a second stage during which a medium-level constant
current (e.g., at a current density between about 5-15 mA/cm.sup.2)
is applied to the substrate, and (3) a third stage during which a
high-level constant current (e.g., at a current density between
about 10-30 mA/cm.sup.2) is applied to the substrate. The first and
second stages may correspond to a period during which many or all
of the features on the substrate are filled (e.g., bottom-up gap
fill in many cases), while the third stage may correspond to an
overburden period that occurs after the features are filled, when
material is being plated in the field region of the substrate.
The method continues with operation 105, where a controlled
potential (sometimes a constant potential) is applied to the
substrate for a short duration. This potential refers to the
potential between the substrate and the reference electrode. In
some cases, the duration of the applied controlled potential during
operation 105 may be between about 5-100 milliseconds, or between
about 10-30 milliseconds, for example about 20 milliseconds. The
controlled potential is typically applied to the substrate for a
relatively short time such that this probing step (operation 105)
does not substantially affect the electroplated film or cause
substantial unwanted plating. The magnitude and direction of the
potential may also be chosen to prevent substantial unwanted
plating (or deplating). The potential that is applied to the
substrate may be a constant cathodic DC potential, with a value
between about -5 and -100 millivolts, or between about -5 and -20
millivolts, in some cases about -10 millivolts. In some cases, the
potential may be a pulsed, cathodic voltage having a value between
about -10 millivolts and about -500 millivolts, having a waveform
period from about 0.1 milliseconds to about 10 milliseconds, and a
duty cycle from about 1% to about 50%. While the controlled
potential is applied to the substrate, the current delivered to the
substrate is monitored and recorded. From this data, the
potential-controlled exit peak current can be determined. This
value corresponds to the highest level of current delivered to the
substrate during the application of controlled potential during
operation 105. In this example, the controlled potential is a
constant potential, and the potential-controlled exit peak current
is often referred to as the potentiostatic exit peak current.
In some cases, the potential-controlled exit average current is
determined, corresponding to the average level of current delivered
to the substrate during application of controlled potential during
operation 105. This potential-controlled exit average current may
be monitored instead of, or in addition to, the
potential-controlled exit peak current.
Operation 105 typically begins after the features on the substrate
are substantially (e.g., at least about 80%) or fully filled. In
some cases, operation 105 may begin at the same time that the
substrate starts moving upwards to be removed from electrolyte. In
other cases, operation 105 may begin after the substrate starts
moving upwards to be removed from electrolyte. In still other
cases, operation 105 may begin before the substrate starts moving
upwards to be removed from electrolyte. Operation 105 may end
before any portion of the plating face of the substrate is removed
from electrolyte (in some such cases, operation 105 may be
performed while the substrate is being vertically lifted, while the
plating face is still immersed). In other cases, operation 105 may
end at a time when the substrate is partially removed from the
electrolyte. In still other cases, operation 105 may end at a time
when the substrate is completely removed from the electrolyte
(e.g., the controlled applied potential is maintained between the
substrate and the reference electrode until the substrate is
completely removed from electrolyte). In operation 107, the
substrate is removed from electrolyte. Operations 105 and 107 may
overlap in time, as discussed above. In certain cases, operation
107 may have a duration between about 0.05-5 seconds, or between
about 0.2-1 second. While the peak current recorded during
operation 105 is often referred to as the potentiostatic or
potential-controlled exit peak current, it is understood that this
peak current does not necessarily have to occur while the substrate
is actively exiting the electrolyte. Rather, the potentiostatic or
potential-controlled exit peak current is the peak current
delivered to the substrate during operation 105 (which occurs after
the features on the substrate are substantially or fully filled
with electroplated material from operation 103).
At operation 109, the potentiostatic exit peak current is compared
to an expected range. The expected range for the potentiostatic
exit peak current may be determined empirically. The expected range
for the potentiostatic exit peak current will depend on a number of
factors including, but not limited to, the composition of the
electrolyte, the current waveform that is used to plate, the
thickness, composition, and resistance of an incoming seed layer,
and the apparatus that is used to plate. The span of the expected
range (e.g., the difference between the lowest and highest expected
potentiostatic exit peak currents) will determine how sensitive the
monitoring process is. Shorter spans provide greater sensitivity
compared to longer spans. In one example, the potentiostatic exit
peak current may have an expected range that centers around 8 A.
Where a relatively longer span (4 A) is used, the expected range of
the potentiostatic exit peak current may be between about 6-10 A.
Where a relatively shorter span (1 A) is used, the expected range
of the potentiostatic exit peak current may be between about
7.5-8.5 A. The expected range can be tailored as desired for a
particular application and tolerance level.
In some cases, operations 109 and 111 may involve comparing the
average current delivered to the substrate during operation 105
(referred to as the potential-controlled exit average current) to
an expected range for this value. This potential-controlled exit
average current may be determined and used in addition to, or
instead of, the potential-controlled exit peak current, in various
embodiments.
At operation 111, it is determined whether the potentiostatic exit
peak current is within the expected range. If so, the method
continues at operation 115 where the next substrate is loaded into
the electroplating apparatus such that electroplating can continue
on the next substrate. However, if it is determined that the
potentiostatic exit peak current recorded during operation 105 is
outside of the expected range, the substrate is flagged and the
method continues at operation 113, where a corrective action is
taken. The corrective action may relate to a number of different
possibilities, and may or may not involve further metrology to
diagnose what caused the potentiostatic exit peak current to stray
from the expected range. In cases where further metrology is
performed, such metrology may occur during any of the operations
shown in FIG. 1.
In certain embodiments where the potential-controlled exit average
current is determined, operation 111 may, alternatively or in
addition, involve comparing the potential-controlled exit average
current to an expected range for this value, as mentioned above.
This average current may similarly provide information about
whether the electroplating process is occurring as desired. In some
cases, the method may continue with operation 115 (immediately
after operation 111) only if both the potential-controlled exit
peak current and the potential-controlled exit average current are
within their respective expected ranges. In another embodiment, the
method may continue with operation 115 (immediately after operation
111) only if the potential-controlled exit average current is
within its expected range, regardless of the potential-controlled
exit peak current. In another embodiment shown in FIG. 1, the
method may continue with operation 115 (immediately after operation
111) only if the potential-controlled exit peak current is within
its expected range, regardless of the potential-controlled exit
average current.
In some embodiments, operation 113 may involve replacing or
cleaning a portion of the electroplating apparatus. An inspection
may be performed in some cases to determine if cleaning or
replacement is warranted. In one example, the substrate holder is
replaced or cleaned. In another example, the anode is replaced or
cleaned. In certain embodiments, operation 113 may involve
adjusting the composition of the electrolyte or replacing the
electrolyte. In these or other embodiments, operation 113 may
involve adjusting a previous processing step, such as a step
performed to deposit a seed layer on the substrate. The adjustment
may lead to a different thickness of the seed layer on subsequent
substrates.
As mentioned, operation 113 may also involve certain metrology
steps to isolate and identify the conditions that caused the
potential-controlled exit peak current to stray from the expected
range. In a number of embodiments, one or more potentials may be
monitored throughout the electroplating process (or during a
specific portion of the electroplating process). For example, the
potential between the substrate and the anode, and/or the potential
between the anode and the reference electrode, can each be
monitored and recorded. These potentials can be compared against
expected ranges, which may be determined empirically. The
potentials can be compared during any one or more of the operations
shown in FIG. 1. In one example, at least one of these potentials
(e.g., between the substrate and anode, or between the anode and
reference electrode) is monitored and recorded during operation 105
and/or 107. In these or other examples, at least one of these
potentials is monitored and recorded during operation 101 and/or
103. Also, in cases where potentiostatic entry is used, the
potentiostatic entry peak current may be used to aid in identifying
any issues. The metrology may also relate to any metrology methods
known in the art.
FIG. 2 provides a simplified view of a portion of an electroplating
apparatus (only the right half of the apparatus is shown, and many
apparatus features are omitted for the sake of clarity). The
substrate 202 is positioned in a substrate support 204, where it is
in contact with a plurality of electrical contacts 206 near the
periphery of the substrate. A reference electrode 208 is positioned
in the electrolyte 210. An anode 212 is also positioned in the
electroplating apparatus. Three different resistances are
illustrated in FIG. 2. R.sub.1 refers to the resistance through the
electrical contacts in the substrate support, R.sub.2 refers to the
resistance through the substrate, and R.sub.3 refers to the
resistance through the solution.
Each of these resistances can sometimes stray outside of an
expected/acceptable range, which can deleteriously affect the
electroplating process. For instance, the resistance of the
electrical contacts, R.sub.1, can increase in cases where a sealing
member fails to adequately prevent exposure of the electrical
contacts to the electrolyte. In such cases, electrolyte can leak
into the area of the contacts, where it may form a layer of caked
on material, which increases the resistance of the electrical
contacts. This can negatively affect the plating process because
the increased R.sub.1 results in less efficient delivery of current
to the substrate during electroplating. The resistance through the
substrate, R.sub.2, can vary depending on the thickness and
composition of the seed layer (or other exposed layer if a seed
layer isn't present). This resistance affects how efficiently and
uniformly the current is applied to the substrate during
electroplating. For instance, if the resistance R.sub.2 of the seed
layer is too high (e.g., as a result of a seed layer that is too
thin), the substrate may have substantial center-to-edge
differences in the plated film. The resistance through the
solution, R.sub.3, also affects the electroplating results,
including the mechanism by which features are filled on the
substrate. In order to achieve bottom-up fill, the resistance of
the solution should be within an expected range such that the
various species in the electrolyte are able to function together as
desired.
By monitoring the different potentials and currents as described
herein, the issue causing the potential-controlled peak exit
current to stray from the expected range may be
isolated/identified. For example, the potential between the
reference electrode and the anode is dependent upon the condition
of the electrolyte and the condition of the anode. This potential
is independent of the conditions on the substrate and substrate
holder. The potential between the substrate and the anode is
dependent upon the condition of the electrolyte, the condition of
the substrate (e.g., resistance of the seed layer), and the
condition of the anode. By looking at the various potentials and
peak (and/or average) currents described herein, the problem can be
isolated to a specific portion of the electroplating process.
Generally speaking, information related to the peak current over a
specific timeframe may also apply to the average current over that
timeframe.
In one example where the electrical contacts in the substrate
holder are dirty (e.g., with dried-on electrolyte or another
unwanted material), this issue can be diagnosed by analyzing (1)
the potential-controlled exit peak current and (2) the potential
between the reference electrode and the anode, and optionally the
potential between the substrate and the anode. The
potential-controlled exit peak current may be outside of the
expected range, indicating that there is likely a problem. The
potential between the reference electrode and the anode is likely
to remain within its expected range in cases where the substrate
holder is dirty, because this potential is independent of the
conditions on the substrate holder. Thus, in cases where the
potentiostatic exit peak current is out of its expected range and
the potential between the reference electrode and anode is within
its expected range, it can be determined that the problem is likely
associated with the substrate or substrate holder. From this same
information, it can be determined that the problem is not likely
associated with the condition/composition of the electrolyte, nor
with the condition of the anode, as these problems would likely
cause the potential between the reference electrode and anode to
stray from its expected range. This determination can be further
confirmed by analyzing the potential between the substrate and the
anode. In cases where the substrate holder is dirty, the potential
between the substrate and anode will likely be outside of its
expected range.
In another example the seed layer deposited on the substrate is out
of specification (e.g., too thin, too thick, or the wrong
material). In this example, the potential-controlled peak exit
current would likely be outside of its expected range, indicating
that there is a problem. The potential between the substrate and
the anode would also likely be outside of its expected range, but
the potential between the reference electrode and the anode would
likely remain within its expected range.
Issues related to the condition of the substrate (e.g., seed layer)
or the condition of the substrate support will typically exhibit
similar symptoms in terms of current/potentials. In order to
determine whether the issue is related to the substrate vs. the
substrate support, a visual inspection (or other metrology) of the
plated substrate or the substrate holder may be performed. Problems
associated with the substrate/seed layer may lead to significant
center-to-edge non-uniformities in the plated film, which can be
observed by inspecting the substrate. Problems associated with a
dirty or otherwise poor condition substrate support may be observed
by inspecting the substrate support.
In another example the electrolyte is out of specification. The
electrolyte may have a composition that has strayed from an
expected composition range. This change in composition may lead to
a change in the conductivity/resistivity of the electrolyte. In
this example, the potential-controlled peak exit current would
likely be outside of its expected range, indicating that there is a
problem. The potential between the substrate and the anode would
also likely be outside of its expected range, as would the
potential between the reference electrode and the anode. When each
of these metrics is outside of its expected range, it may indicate
that the electrolyte should be analyzed, treated to tailor its
composition, refreshed (e.g., by replacing a portion of the
electrolyte), and/or replaced.
In another example the anode is in poor condition (e.g., coated
with anode sludge, degraded, etc.). Here, the potential-controlled
peak exit current is likely to be outside of its expected range.
The potential between the substrate and the anode is also likely to
be outside of its expected range, as is the potential between the
reference electrode and the anode. When each of these metrics is
outside of its expected range, it may indicate that the anode
should be inspected, cleaned, and/or replaced.
Problems associated with the condition/composition of the
electrolyte or the condition of the anode may exhibit similar
symptoms in terms of current/potentials. To determine whether the
problem is associated with the electrolyte or with the anode, a
number of options are available. For instance, the anode may be
visually inspected or otherwise analyzed. In some cases, the
electrolyte may undergo further testing to evaluate its composition
and/or properties.
FIG. 3 presents a flowchart for a method of electroplating
according to certain embodiments. The method in FIG. 3 is similar
to the method in FIG. 1, and for the sake of brevity only the
differences will be described. The method in FIG. 3 includes
additional operations 104a and 104b. In operation 104a, a
controlled potential is applied to the substrate while a current
delivered to the substrate is monitored and recorded. This
operation may be referred to as a "potential-controlled probe"
step, and it occurs before the features on the substrate are
substantially or fully filled. For example, operation 104a may
occur during operation 101 and/or during operation 103. Generally,
operation 104a may be similar to operation 105, except for the
timing of when these steps occur. As such, description herein
related to the potential-controlled exit step (operation 105) may
also apply to the potential-controlled probe step (operation
104a).
In operation 104b, the peak current delivered to the substrate
during operation 104a (also referred to as the potential-controlled
probe peak current) is compared against an expected range. Like the
peak current delivered to the substrate during operation 105, the
potential-controlled probe peak current can provide information
about whether the electroplating process is operating within a
pre-defined processing window. The potential-controlled probe peak
current may stray out of its expected range as a result of various
issues as described herein, including but not limited to, dirty or
degraded apparatus parts (e.g., substrate holder, electrical
contacts, anode, etc.), electrolyte that is out-of-specification,
or a different seed layer thickness/resistance. In some cases,
operation 104b may involve comparing the average current delivered
to the substrate during operation 104a (either instead of, or in
addition to, the peak current during this same time) to an expected
range for this value.
Apparatus
The methods described herein may be performed by any suitable
apparatus. A suitable apparatus includes hardware for accomplishing
the process operations and a system controller having instructions
for controlling process operations in accordance with the present
embodiments. For example, in some embodiments, the hardware may
include one or more process stations included in a process
tool.
FIG. 4 presents an example of an electroplating cell in which
electroplating may occur. Often, an electroplating apparatus
includes one or more electroplating cells in which the substrates
(e.g., wafers) are processed. Only one electroplating cell is shown
in FIG. 4 to preserve clarity. To optimize bottom-up
electroplating, additives (e.g., accelerators, suppressors, and
levelers) are added to the electrolyte; however, an electrolyte
with additives may react with the anode in undesirable ways.
Therefore anodic and cathodic regions of the plating cell are
sometimes separated by a membrane so that plating solutions of
different composition may be used in each region. Plating solution
in the cathodic region is called catholyte; and in the anodic
region, anolyte. A number of engineering designs can be used in
order to introduce anolyte and catholyte into the plating
apparatus.
Referring to FIG. 4, a diagrammatical cross-sectional view of an
electroplating apparatus 401 in accordance with one embodiment is
shown. The plating bath 403 contains the plating solution (having a
composition as provided herein), which is shown at a level 405. The
catholyte portion of this vessel is adapted for receiving
substrates in a catholyte. A wafer 407 is immersed into the plating
solution and is held by, e.g., a "clamshell" substrate holder 409,
mounted on a rotatable spindle 411, which allows rotation of
clamshell substrate holder 409 together with the wafer 407. A
general description of a clamshell-type plating apparatus having
aspects suitable for use with this invention is described in detail
in U.S. Pat. No. 6,156,167 issued to Patton et al., and U.S. Pat.
No. 6,800,187 issued to Reid et al., which are incorporated herein
by reference in their entireties.
An anode 413 is disposed below the wafer within the plating bath
403 and is separated from the wafer region by a membrane 415,
preferably an ion selective membrane. For example, Nafion.TM.
cationic exchange membrane (CEM) may be used. The region below the
anodic membrane is often referred to as an "anode chamber." The
ion-selective anode membrane 415 allows ionic communication between
the anodic and cathodic regions of the plating cell, while
preventing the particles generated at the anode from entering the
proximity of the wafer and contaminating it. The anode membrane is
also useful in redistributing current flow during the plating
process and thereby improving the plating uniformity. Detailed
descriptions of suitable anodic membranes are provided in U.S. Pat.
Nos. 6,126,798 and 6,569,299 issued to Reid et al., both
incorporated herein by reference in their entireties. Ion exchange
membranes, such as cationic exchange membranes, are especially
suitable for these applications. These membranes are typically made
of ionomeric materials, such as perfluorinated co-polymers
containing sulfonic groups (e.g. Nafion.TM.), sulfonated
polyimides, and other materials known to those of skill in the art
to be suitable for cation exchange. Selected examples of suitable
Nafion.TM. membranes include N324 and N424 membranes available from
Dupont de Nemours Co.
During plating the ions from the plating solution are deposited on
the substrate. The metal ions must diffuse through the diffusion
boundary layer and into the TSV hole or other feature. A typical
way to assist the diffusion is through convection flow of the
electroplating solution provided by the pump 417. Additionally, a
vibration agitation or sonic agitation member may be used as well
as wafer rotation. For example, a vibration transducer 408 may be
attached to the clamshell substrate holder 409.
The plating solution is continuously provided to plating bath 403
by the pump 417. Generally, the plating solution flows upwards
through an anode membrane 415 and a diffuser plate 419 to the
center of wafer 407 and then radially outward and across wafer 407.
The plating solution also may be provided into the anodic region of
the bath from the side of the plating bath 403. The plating
solution then overflows plating bath 403 to an overflow reservoir
421. The plating solution is then filtered (not shown) and returned
to pump 417 completing the recirculation of the plating solution.
In certain configurations of the plating cell, a distinct
electrolyte is circulated through the portion of the plating cell
in which the anode is contained while mixing with the main plating
solution is prevented using sparingly permeable membranes or ion
selective membranes.
A reference electrode 431 is located on the outside of the plating
bath 403 in a separate chamber 433, which chamber is replenished by
overflow from the main plating bath 403. Alternatively, in some
embodiments the reference electrode is positioned as close to the
substrate surface as possible, and the reference electrode chamber
is connected via a capillary tube or by another method, to the side
of the wafer substrate or directly under the wafer substrate.
Reference electrodes are commonly used in electroplating systems.
In various electroplating systems, a negative potential is applied
to a substrate/cathode to thereby electroplate metal onto the
substrate. An anode (also referred to as a counter electrode)
completes the primary circuit in the electroplating cell and
receives a positive potential during plating. The anode
counterbalances the reaction occurring at the substrate where metal
is deposited. The reference electrode serves to provide a direct
measure of the potential of the electrolyte at a particular
location (the location of the reference electrode). A reference
electrode draws negligible current and therefore does not create
ohmic or mass transfer variations in the electrolyte close to the
reference electrode. The reference electrode can be made to draw
very little current by designing it to have a very high impedance.
In some of the preferred embodiments, the apparatus further
includes contact sense leads that connect to the wafer periphery
and which are configured to sense the potential of the metal seed
layer at the periphery of the wafer but do not carry any current to
the wafer.
The reference electrode 431 is typically employed when
electroplating at a controlled potential is desired. The reference
electrode 431 may be one of a variety of commonly used types such
as mercury/mercury sulfate, silver chloride, saturated calomel, or
copper metal. A contact sense lead in direct contact with the wafer
407 may be used in some embodiments, in addition to the reference
electrode, for more accurate potential measurement (not shown).
A DC power supply 435 can be used to control current flow to the
wafer 407. The power supply 435 has a negative output lead 439
electrically connected to wafer 407 through one or more slip rings,
brushes and contacts (not shown). The positive output lead 441 of
power supply 435 is electrically connected to an anode 413 located
in plating bath 403. The power supply 435, a reference electrode
431, and a contact sense lead (not shown) can be connected to a
system controller 447, which allows, among other functions,
modulation of current and potential provided to the elements of
electroplating cell. For example, the controller may allow
electroplating in potential-controlled and current-controlled
regimes. The controller may include program instructions specifying
current and voltage levels that need to be applied to various
elements of the plating cell, as well as times at which these
levels need to be changed. When forward current is applied, the
power supply 435 biases the wafer 407 to have a negative potential
relative to anode 413. This causes an electrical current to flow
from anode 413 to the wafer 407, and an electrochemical reduction
(e.g. Cu.sup.2++2 e.sup.-=Cu.sup.0) occurs on the wafer surface
(the cathode), which results in the deposition of the electrically
conductive layer (e.g. copper) on the surfaces of the wafer. An
inert anode 414 may be installed below the wafer 407 within the
plating bath 403 and separated from the wafer region by the
membrane 415.
The apparatus may also include a heater 445 for maintaining the
temperature of the plating solution at a specific level. The
plating solution may be used to transfer the heat to the other
elements of the plating bath. For example, when a wafer 407 is
loaded into the plating bath the heater 445 and the pump 417 may be
turned on to circulate the plating solution through the
electroplating apparatus 401, until the temperature throughout the
apparatus becomes substantially uniform. In one embodiment the
heater is connected to the system controller 447. The system
controller 447 may be connected to a thermocouple to receive
feedback of the plating solution temperature within the
electroplating apparatus and determine the need for additional
heating.
The controller will typically include one or more memory devices
and one or more processors. The processor may include a CPU or
computer, analog and/or digital input/output connections, stepper
motor controller boards, etc. In certain embodiments, the
controller controls all of the activities of the electroplating
apparatus. Non-transitory machine-readable media containing
instructions for controlling process operations in accordance with
the present embodiments may be coupled to the system
controller.
Typically there will be a user interface associated with controller
447. The user interface may include a display screen, graphical
software displays of the apparatus and/or process conditions, and
user input devices such as pointing devices, keyboards, touch
screens, microphones, etc. The computer program code for
controlling electroplating processes can be written in any
conventional computer readable programming language: for example,
assembly language, C, C++, Pascal, Fortran or others. Compiled
object code or script is executed by the processor to perform the
tasks identified in the program. One example of a plating apparatus
that may be used according to the embodiments herein is the Lam
Research Sabre tool. Electrodeposition can be performed in
components that form a larger electrodeposition apparatus.
FIG. 5 shows a schematic of a top view of an example
electrodeposition apparatus. The electrodeposition apparatus 500
can include three separate electroplating modules 502, 504, and
506. The electrodeposition apparatus 500 can also include three
separate modules 512, 514, and 516 configured for various process
operations. For example, in some embodiments, one or more of
modules 512, 514, and 516 may be a spin rinse drying (SRD) module.
In other embodiments, one or more of the modules 512, 514, and 516
may be post-electrofill modules (PEMs), each configured to perform
a function, such as edge bevel removal, backside etching, and acid
cleaning of substrates after they have been processed by one of the
electroplating modules 502, 504, and 506.
The electrodeposition apparatus 500 includes a central
electrodeposition chamber 524. The central electrodeposition
chamber 524 is a chamber that holds the chemical solution used as
the electroplating solution in the electroplating modules 502, 504,
and 506. The electrodeposition apparatus 500 also includes a dosing
system 526 that may store and deliver additives for the
electroplating solution. A chemical dilution module 522 may store
and mix chemicals to be used as an etchant. A filtration and
pumping unit 528 may filter the electroplating solution for the
central electrodeposition chamber 524 and pump it to the
electroplating modules.
A system controller 530 provides electronic and interface controls
required to operate the electrodeposition apparatus 500. The system
controller 530 (which may include one or more physical or logical
controllers) controls some or all of the properties of the
electroplating apparatus 500.
Signals for monitoring the process may be provided by analog and/or
digital input connections of the system controller 530 from various
process tool sensors. The signals for controlling the process may
be output on the analog and digital output connections of the
process tool. Non-limiting examples of process tool sensors that
may be monitored include mass flow controllers, pressure sensors
(such as manometers), thermocouples, optical position sensors, etc.
Appropriately programmed feedback and control algorithms may be
used with data from these sensors to maintain process
conditions.
A hand-off tool 540 may select a substrate from a substrate
cassette such as the cassette 542 or the cassette 544. The
cassettes 542 or 544 may be front opening unified pods (FOUPs). A
FOUP is an enclosure designed to hold substrates securely and
safely in a controlled environment and to allow the substrates to
be removed for processing or measurement by tools equipped with
appropriate load ports and robotic handling systems. The hand-off
tool 540 may hold the substrate using a vacuum attachment or some
other attaching mechanism.
The hand-off tool 540 may interface with a wafer handling station
532, the cassettes 542 or 544, a transfer station 550, or an
aligner 548. From the transfer station 550, a hand-off tool 546 may
gain access to the substrate. The transfer station 550 may be a
slot or a position from and to which hand-off tools 540 and 546 may
pass substrates without going through the aligner 548. In some
embodiments, however, to ensure that a substrate is properly
aligned on the hand-off tool 546 for precision delivery to an
electroplating module, the hand-off tool 546 may align the
substrate with an aligner 548. The hand-off tool 546 may also
deliver a substrate to one of the electroplating modules 502, 504,
or 506 or to one of the three separate modules 512, 514, and 516
configured for various process operations.
An example of a process operation according to the methods
described above may proceed as follows: (1) electrodeposit copper
or another material onto a substrate in the electroplating module
504; (2) rinse and dry the substrate in SRD in module 512; and, (3)
perform edge bevel removal in module 514.
An apparatus configured to allow efficient cycling of substrates
through sequential plating, rinsing, drying, and PEM process
operations may be useful for implementations for use in a
manufacturing environment. To accomplish this, the module 512 can
be configured as a spin rinse dryer and an edge bevel removal
chamber. With such a module 512, the substrate would only need to
be transported between the electroplating module 504 and the module
512 for the copper plating and EBR operations. In some embodiments
the methods described herein will be implemented in a system which
comprises an electroplating apparatus and a stepper.
An alternative embodiment of an electrodeposition apparatus 600 is
schematically illustrated in FIG. 6. In this embodiment, the
electrodeposition apparatus 600 has a set of electroplating cells
607, each containing an electroplating bath, in a paired or
multiple "duet" configuration. In addition to electroplating per
se, the electrodeposition apparatus 600 may perform a variety of
other electroplating related processes and sub-steps, such as
spin-rinsing, spin-drying, metal and silicon wet etching,
electroless deposition, pre-wetting and pre-chemical treating,
reducing, annealing, photoresist stripping, and surface
pre-activation, for example. The electrodeposition apparatus 600 is
shown schematically looking top down in FIG. 6, and only a single
level or "floor" is revealed in the figure, but it is to be readily
understood by one having ordinary skill in the art that such an
apparatus, e.g., the Novellus Sabre.TM. 3D tool, can have two or
more levels "stacked" on top of each other, each potentially having
identical or different types of processing stations.
Referring once again to FIG. 6, the substrates 606 that are to be
electroplated are generally fed to the electrodeposition apparatus
600 through a front end loading FOUP 601 and, in this example, are
brought from the FOUP to the main substrate processing area of the
electrodeposition apparatus 600 via a front-end robot 602 that can
retract and move a substrate 606 driven by a spindle 603 in
multiple dimensions from one station to another of the accessible
stations--two front-end accessible stations 604 and also two
front-end accessible stations 608 are shown in this example. The
front-end accessible stations 604 and 608 may include, for example,
pre-treatment stations, and spin rinse drying (SRD) stations.
Lateral movement from side-to-side of the front-end robot 602 is
accomplished utilizing robot track 602a. Each of the substrates 606
may be held by a cup/cone assembly (not shown) driven by a spindle
603 connected to a motor (not shown), and the motor may be attached
to a mounting bracket 609. Also shown in this example are the four
"duets" of electroplating cells 607, for a total of eight
electroplating cells 607. A system controller (not shown) may be
coupled to the electrodeposition apparatus 600 to control some or
all of the properties of the electrodeposition apparatus 600. The
system controller may be programmed or otherwise configured to
execute instructions according to processes described earlier
herein.
System Controller
In some implementations, a controller is part of a system, which
may be part of the above-described examples. Such systems can
comprise semiconductor processing equipment, including a processing
tool or tools, chamber or chambers, a platform or platforms for
processing, and/or specific processing components (a wafer
pedestal, a gas flow system, etc.). These systems may be integrated
with electronics for controlling their operation before, during,
and after processing of a semiconductor wafer or substrate. The
electronics may be referred to as the "controller," which may
control various components or subparts of the system or systems.
The controller, depending on the processing requirements and/or the
type of system, may be programmed to control any of the processes
disclosed herein, including the delivery of processing gases,
temperature settings (e.g., heating and/or cooling), pressure
settings, vacuum settings, power settings, radio frequency (RF)
generator settings, RF matching circuit settings, frequency
settings, flow rate settings, fluid delivery settings, positional
and operation settings, wafer transfers into and out of a tool and
other transfer tools and/or load locks connected to or interfaced
with a specific system.
Broadly speaking, the controller may be defined as electronics
having various integrated circuits, logic, memory, and/or software
that receive instructions, issue instructions, control operation,
enable cleaning operations, enable endpoint measurements, and the
like. The integrated circuits may include chips in the form of
firmware that store program instructions, digital signal processors
(DSPs), chips defined as application specific integrated circuits
(ASICs), and/or one or more microprocessors, or microcontrollers
that execute program instructions (e.g., software). Program
instructions may be instructions communicated to the controller in
the form of various individual settings (or program files),
defining operational parameters for carrying out a particular
process on or for a semiconductor wafer or to a system. The
operational parameters may, in some embodiments, be part of a
recipe defined by process engineers to accomplish one or more
processing steps during the fabrication of one or more layers,
materials, metals, oxides, silicon, silicon dioxide, surfaces,
circuits, and/or dies of a wafer.
The controller, in some implementations, may be a part of or
coupled to a computer that is integrated with, coupled to the
system, otherwise networked to the system, or a combination
thereof. For example, the controller may be in the "cloud" or all
or a part of a fab host computer system, which can allow for remote
access of the wafer processing. The computer may enable remote
access to the system to monitor current progress of fabrication
operations, examine a history of past fabrication operations,
examine trends or performance metrics from a plurality of
fabrication operations, to change parameters of current processing,
to set processing steps to follow a current processing, or to start
a new process. In some examples, a remote computer (e.g. a server)
can provide process recipes to a system over a network, which may
include a local network or the Internet. The remote computer may
include a user interface that enables entry or programming of
parameters and/or settings, which are then communicated to the
system from the remote computer. In some examples, the controller
receives instructions in the form of data, which specify parameters
for each of the processing steps to be performed during one or more
operations. It should be understood that the parameters may be
specific to the type of process to be performed and the type of
tool that the controller is configured to interface with or
control. Thus as described above, the controller may be
distributed, such as by comprising one or more discrete controllers
that are networked together and working towards a common purpose,
such as the processes and controls described herein. An example of
a distributed controller for such purposes would be one or more
integrated circuits on a chamber in communication with one or more
integrated circuits located remotely (such as at the platform level
or as part of a remote computer) that combine to control a process
on the chamber.
Without limitation, example systems may include a plasma etch
chamber or module, a deposition chamber or module, a spin-rinse
chamber or module, a metal plating chamber or module, a clean
chamber or module, a bevel edge etch chamber or module, a physical
vapor deposition (PVD) chamber or module, a chemical vapor
deposition (CVD) chamber or module, an atomic layer deposition
(ALD) chamber or module, an atomic layer etch (ALE) chamber or
module, an ion implantation chamber or module, a track chamber or
module, and any other semiconductor processing systems that may be
associated or used in the fabrication and/or manufacturing of
semiconductor wafers.
As noted above, depending on the process step or steps to be
performed by the tool, the controller might communicate with one or
more of other tool circuits or modules, other tool components,
cluster tools, other tool interfaces, adjacent tools, neighboring
tools, tools located throughout a factory, a main computer, another
controller, or tools used in material transport that bring
containers of wafers to and from tool locations and/or load ports
in a semiconductor manufacturing factory.
The various hardware and method embodiments described above may be
used in conjunction with lithographic patterning tools or
processes, for example, for the fabrication or manufacture of
semiconductor devices, displays, LEDs, photovoltaic panels and the
like. Typically, though not necessarily, such tools/processes will
be used or conducted together in a common fabrication facility.
Lithographic patterning of a film typically comprises some or all
of the following steps, each step enabled with a number of possible
tools: (1) application of photoresist on a workpiece, e.g., a
substrate having a silicon nitride film formed thereon, using a
spin-on or spray-on tool; (2) curing of photoresist using a hot
plate or furnace or other suitable curing tool; (3) exposing the
photoresist to visible or UV or x-ray light with a tool such as a
wafer stepper; (4) developing the resist so as to selectively
remove resist and thereby pattern it using a tool such as a wet
bench or a spray developer; (5) transferring the resist pattern
into an underlying film or workpiece by using a dry or
plasma-assisted etching tool; and (6) removing the resist using a
tool such as an RF or microwave plasma resist stripper. In some
embodiments, an ashable hard mask layer (such as an amorphous
carbon layer) and another suitable hard mask (such as an
antireflective layer) may be deposited prior to applying the
photoresist.
It is to be understood that the configurations and/or approaches
described herein are exemplary in nature, and that these specific
embodiments or examples are not to be considered in a limiting
sense, because numerous variations are possible. The specific
routines or methods described herein may represent one or more of
any number of processing strategies. As such, various acts
illustrated may be performed in the sequence illustrated, in other
sequences, in parallel, or in some cases omitted. Likewise, the
order of the above described processes may be changed.
The subject matter of the present disclosure includes all novel and
nonobvious combinations and sub-combinations of the various
processes, systems and configurations, and other features,
functions, acts, and/or properties disclosed herein, as well as any
and all equivalents thereof.
EXPERIMENTAL
FIGS. 7A and 7B present experimental results illustrating the
effect of the substrate holder condition on the
potential-controlled exit peak current for different seed layer
thicknesses. Both the seed layers and the electroplated material in
these examples were copper. FIG. 7A presents results related to
electroplating a relatively thin film having a thickness of about
700 .ANG., while FIG. 7B presents results related to electroplating
a relatively thicker film having a thickness of about 5000 .ANG..
The substrate holder condition is referred to as either "clean" or
"dirty." A clean substrate holder may also be referred to as "dry"
while a dirty substrate holder may also be referred to as
"crystal." As opposed to a clean substrate holder, a dirty
substrate holder is one that has dried-on electrolyte or other
unwanted material that affects the efficiency at which
current/potential is applied to the substrate through the substrate
holder. In this example, the electroplating process is operating
within its pre-defined processing window when the substrate holder
is clean, and outside of its pre-defined processing window when the
substrate holder is dirty. Thus, generally speaking, the expected
range for the potential-controlled exit peak current corresponds
with the data related to the clean substrate holder.
As shown in both FIGS. 7A and 7B, the potential-controlled exit
peak current is sensitive to the condition of the substrate holder
for seed layer thicknesses of about 400 .ANG. or less. Above this
seed layer thickness, the differences were minimal between the
clean and dirty conditions. Advantageously, the
potential-controlled exit peak current was sensitive to the
condition of the substrate holder for both thin electroplated films
(FIG. 7A, 700 .ANG. film) and thick electroplated films (FIG. 7B,
5000 .ANG. film). These results suggest that the
potential-controlled exit peak current can be monitored to
effectively identify/flag cases where the substrate holder is dirty
and should be cleaned or replaced before further processing on
additional substrates.
To obtain the potential-controlled exit peak currents shown in
FIGS. 7A and 7B, a constant potential of about 100-5000 millivolts
was applied between the substrate and the reference electrode
positioned in the electrolyte. This constant potential was applied
for a duration of about 20 milliseconds while the substrate was
being removed from the electrolyte, after the film was
substantially plated. During application of this constant
potential, the current delivered to the substrate was monitored and
recorded. The potential-controlled exit peak current relates to the
maximum current delivered to the substrate during the
potential-controlled (in this case potentiostatic) exit step. The
experiment was repeated for a number of different substrates having
different seed thicknesses.
With reference to FIG. 7B, in one example a 200 .ANG. seed layer is
used. Under normal operation (e.g., when the electroplating process
is running within a particular pre-defined processing window), it
is expected that the potential-controlled exit peak current will
fall between about 13-15 A. If the potential-controlled exit peak
current is outside of this expected range, it can be determined
that the electroplating process is no longer running within the
pre-defined processing window. For instance, where the substrate
holder is dirty, the potential-controlled exit peak current may be
about 5 A, as shown in FIG. 7B. In response to this
out-of-specification potential-controlled exit peak current, some
corrective action may be taken, as described in relation to
operation 113 of FIGS. 1 and 3. In some cases, the corrective
action may involve further metrology to diagnose the problem, as
discussed above. In a particular example, the corrective action may
involve inspecting and then cleaning or replacing the substrate
holder.
FIGS. 7A and 7B suggest that the methods described herein are
useful for identifying cases in which the substrate holder is in
poor condition for electroplating, at least up to a particular seed
thickness. At seed thicknesses above about 400 .ANG., the
potential-controlled exit peak current does not appear to be
sensitive to the condition of the substrate holder. However, it is
expected that the methods described herein will be useful even at
greater seed thicknesses in cases where higher resistance seed
layer materials are used. As mentioned above, the seed layers used
in relation to FIGS. 7A and 7B were copper. In cases where a cobalt
seed layer is used (or any metal seed layer material having a
similar or higher resistance compared to cobalt), it is expected
that the described methods will be sensitive to the condition of
the substrate holder even at seed layer thicknesses above 400
.ANG.. In various embodiments, the seed layer may have a sheet
resistance between about 0.1-200 ohm/sq. The potential-controlled
exit peak current may be sensitive to conditions that cause the
electroplating process to run outside of its pre-defined process
window when the substrate is provided with a seed layer having this
sheet resistance.
FIG. 7C is a graph illustrating the effect of substrate holder
condition on the potential-controlled probe peak current for
different seed layer thicknesses. In this example, the
potential-controlled probe operation occurred while the substrate
was being immersed, and it involved applying a constant potential
of about 1000 millivolts between the substrate and the reference
electrode. In other words, a potentiostatic entry was used, as
described above. The constant potential was applied to the
substrate for a duration of about 0.1 s, from a time before the
substrate started entering the solution, until a time after the
substrate was fully immersed. During application of the constant
potential, the current delivered to the substrate was monitored and
recorded. The y-axis refers to the maximum current delivered to the
substrate during application of the constant potential during the
probe step (in this case during immersion). The experiment was
carried out on a number of substrates having different seed layer
thicknesses.
The data show that the potential-controlled probe peak current is
sensitive to the condition of the substrate holder. Generally, in
cases where the substrate holder is dirty (e.g., with dried-on
electrolyte), the potential-controlled probe peak current is lower
than expected. In some other cases, a substrate holder with a
different unwanted material thereon may result in a
potential-controlled probe peak current that is higher than
expected. Like the data in FIGS. 7A and 7B, the expected
value/range of the potential-controlled peak current corresponds
with the data produced when the substrate holder was clean.
FIG. 8 presents a graph illustrating the potential-controlled exit
peak current vs. electroplated film thickness for substrates
provided with 50 .ANG. copper seed layers. In this example, the
controlled potential applied to the substrate was a constant
potential of about 1000 millivolts between the substrate and the
reference electrode. The constant potential was applied to the
substrate for a duration of about 20 milliseconds as the substrate
was being removed from the electrolyte. The results show that the
potential-controlled exit peak current is sensitive to the plated
film thickness up to about 0.1 .mu.m. At film thicknesses above
about 0.1 .mu.m, the potential-controlled exit peak current is much
less sensitive to the plated film thickness. The results in FIG. 8
suggest that the potential-controlled exit peak current can be used
to identify/flag cases where the electroplated film thickness is
greater or less than expected. The potential-controlled exit peak
current is especially sensitive in this regard if the electroplated
film (either the desired film or the actual plated film) has a
thickness of about 0.1 .mu.m or less.
In one example, the electroplating process is designed to produce a
plated film about 0.15 .mu.m thick, resulting in an expected
potential-controlled exit peak current between about 12.5-13.5
.ANG., as shown in FIG. 8. Where the electroplating process is
running out-of-specification and a film only about 0.5 .mu.m thick
is formed, the potential-controlled exit peak current may be about
11 A, as shown in FIG. 8. The potential-controlled exit peak
current in this example is outside of its expected range,
indicating that there is a problem with the electroplating process
or apparatus that should be addressed before processing additional
substrates.
FIG. 9 provides a graph depicting the potential-controlled exit
peak current for different electrolytes and different seed layer
thicknesses. Four different electrolytes were tested at five
different seed thicknesses, and two runs were performed for each
combination of seed thickness/electrolyte composition. The
different electrolytes were (A) VMS (virgin makeup solution, which
includes CuSO.sub.4, HCl, H.sub.2SO.sub.4, and deionized water,
each at a standard concentration); (B) solution A plus 6 ml/l MLI
accelerator; (C) solution B plus 8 ml/l MLI suppressor; and (D)
solution C plus 3 ml/l MLI leveler. Results related to thinner seed
layers are presented toward the left side of the graph, and results
related to thicker seed layers are presented toward the right side
of the graph. For each seed thickness, the potential-controlled
exit peak current was sensitive to the composition of the
electrolyte. These results suggest that the disclosed methods can
be used to identify/flag cases where the electrolyte is
out-of-specification. Advantageously, this flagging can prevent
further substrates from being processed in electrolyte that does
not have the proper concentration of organic plating additives.
This minimizes the waste/cost associated with sub-standard or
failed electroplating results.
* * * * *