U.S. patent application number 16/373027 was filed with the patent office on 2020-10-08 for die stacks and methods forming same.
The applicant listed for this patent is Taiwan Semiconductor Manufacturing Company, Ltd.. Invention is credited to Chung-Hao Tsai, Chuei-Tang Wang, Chen-Hua Yu.
Application Number | 20200321315 16/373027 |
Document ID | / |
Family ID | 1000004131751 |
Filed Date | 2020-10-08 |
View All Diagrams
United States Patent
Application |
20200321315 |
Kind Code |
A1 |
Yu; Chen-Hua ; et
al. |
October 8, 2020 |
DIE STACKS AND METHODS FORMING SAME
Abstract
A method includes thinning a semiconductor substrate of a device
die to reveal through-substrate vias that extend into the
semiconductor substrate, and forming a first redistribution
structure, which includes forming a first plurality of dielectric
layers over the semiconductor substrate, and forming a first
plurality of redistribution lines in the first plurality of
dielectric layers. The first plurality of redistribution lines are
electrically connected to the through-substrate vias. The method
further includes placing a first memory die over the first
redistribution structure, and forming a first plurality of metal
posts over the first redistribution structure. The first plurality
of metal posts are electrically connected to the first plurality of
redistribution lines. The first memory die is encapsulated in a
first encapsulant. A second plurality of redistribution lines are
formed over, and electrically connected to, the first plurality of
metal posts and the first memory die.
Inventors: |
Yu; Chen-Hua; (Hsinchu,
TW) ; Tsai; Chung-Hao; (Huatan Township, TW) ;
Wang; Chuei-Tang; (Taichung City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hsinchu |
|
TW |
|
|
Family ID: |
1000004131751 |
Appl. No.: |
16/373027 |
Filed: |
April 2, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/3128 20130101;
H01L 24/09 20130101; H01L 23/5283 20130101; H01L 2924/1434
20130101; H01L 2224/0231 20130101; H01L 21/566 20130101; H01L
21/563 20130101; H01L 21/76898 20130101; H01L 2224/02381 20130101;
H01L 24/17 20130101; H01L 25/0657 20130101; H01L 2224/02373
20130101; H01L 23/481 20130101; H01L 24/32 20130101; H01L 23/5226
20130101 |
International
Class: |
H01L 25/065 20060101
H01L025/065; H01L 23/48 20060101 H01L023/48; H01L 23/522 20060101
H01L023/522; H01L 23/528 20060101 H01L023/528; H01L 23/00 20060101
H01L023/00; H01L 23/31 20060101 H01L023/31; H01L 21/56 20060101
H01L021/56; H01L 21/768 20060101 H01L021/768 |
Claims
1. A method comprising: forming a memory die stack comprising:
placing a first memory die on a lower dielectric layer; forming a
first plurality of metal posts over the lower dielectric layer;
encapsulating the first memory die in a first encapsulant; forming
a first redistribution structure comprising: forming a first
plurality of dielectric layers over the first encapsulant; and
forming a first plurality of redistribution lines in the first
plurality of dielectric layers, wherein the first plurality of
redistribution lines are electrically connected to the first
plurality of metal posts and the first memory die; placing a second
memory die over the first redistribution structure; forming a
second plurality of metal posts over the first redistribution
structure, wherein the second plurality of metal posts are
electrically connected to the first plurality of metal posts;
encapsulating the second memory die in a second encapsulant;
forming a second redistribution structure comprising: forming a
second plurality of dielectric layers over the second encapsulant;
and forming a second plurality of redistribution lines in the
second plurality of dielectric layers, wherein the second plurality
of redistribution lines are electrically connected to the second
plurality of metal posts and the second memory die.
2. The method of claim 1, wherein the first memory die and the
second memory die are free from through-substrate vias therein.
3. The method of claim 1, wherein the first memory die is placed on
the lower dielectric layer through a first adhesive film, and the
second memory die is placed on the second redistribution structure
through a second adhesive film.
4. The method of claim 1 further comprising: forming an additional
redistribution structure comprising: forming an additional
plurality of dielectric layers over a device die comprising a
semiconductor substrate and through-vias in the semiconductor
substrate, wherein the lower dielectric layer is comprised in the
additional plurality of dielectric layers; and forming an
additional plurality of redistribution lines in the additional
plurality of dielectric layers, wherein the additional plurality of
redistribution lines are electrically connected to the
through-vias.
5. The method of claim 4, wherein the additional redistribution
structure is formed on a front side of the device die, and the
device die comprises electrical connectors on the front side, and a
first polymer layer encapsulating the electrical connectors
therein.
6. The method of claim 5, wherein the forming the additional
redistribution structure comprises: thinning the first polymer
layer to reveal the electrical connectors; and disposing a second
polymer layer over and contacting the electrical connectors and the
first polymer layer, wherein the second polymer layer is comprised
in the additional plurality of dielectric layers.
7. The method of claim 4, wherein the additional redistribution
structure is formed on a back side of the device die.
8. The method of claim 7, wherein the forming the additional
redistribution structure comprises: thinning the semiconductor
substrate of the device die to reveal the through-vias; and
disposing a polymer layer over and contacting both the through-vias
and the semiconductor substrate, wherein the polymer layer is
comprised in the additional plurality of dielectric layers.
9. The method of claim 1 further comprising: bonding the memory die
stack on a device die, wherein the first plurality of metal posts
are electrically connected to through-vias in a semiconductor
substrate of the device die.
10. A method comprising: thinning a semiconductor substrate of a
device die to reveal through-substrate vias that extend into the
semiconductor substrate; forming a first redistribution structure
comprising: forming a first plurality of dielectric layers over the
semiconductor substrate; and forming a first plurality of
redistribution lines in the first plurality of dielectric layers,
wherein the first plurality of redistribution lines are
electrically connected to the through-substrate vias; placing a
first memory die over the first redistribution structure; forming a
first plurality of metal posts over the first redistribution
structure, wherein the first plurality of metal posts are
electrically connected to the first plurality of redistribution
lines; encapsulating the first memory die in a first encapsulant;
and forming a second plurality of redistribution lines over, and
electrically connected to, the first plurality of metal posts and
the first memory die.
11. The method of claim 10 further comprising forming a second
redistribution structure comprising: forming a second plurality of
dielectric layers over the first encapsulant, wherein the second
plurality of redistribution lines are in the second plurality of
dielectric layers.
12. The method of claim 10, wherein a bottom dielectric layer in
the first plurality of dielectric layers are in physical contact
with the semiconductor substrate and the through-substrate
vias.
13. The method of claim 12, wherein the through-substrate vias are
separated from the semiconductor substrate by insulation liners,
and the bottom dielectric layer is further in contact with the
insulation liners.
14. The method of claim 10, wherein the forming the first plurality
of dielectric layers comprises forming a plurality of polymer
layers.
15. The method of claim 10, wherein the first memory die comprises
an additional semiconductor substrate, and the first memory die is
free from through-vias in the additional semiconductor
substrate.
16.-20. (canceled)
21. A method comprising: providing a device die comprising: a
semiconductor substrate; a plurality of through-substrate vias
penetrating through the semiconductor substrate; and an
interconnect structure on a side of the semiconductor substrate;
forming a first redistribution structure over and electrically
coupling to the device die; placing a first memory die and a second
memory die over the first redistribution structure; forming a first
plurality of metal posts between the first memory die and the
second memory die, wherein the first plurality of metal posts are
electrically coupled to the plurality of through-substrate vias;
encapsulating the first plurality of metal posts, the first memory
die, and the second memory die in a first encapsulant; and
connecting the device die to the first memory die and the second
memory die through the first plurality of metal posts.
22. The method of claim 21 further comprising stacking a third
memory die and a fourth memory die overlapping the first memory die
and the second memory die, respectively.
23. The method of claim 22 further comprising forming a second
plurality of metal posts between the third memory die and the
fourth memory die, wherein the second plurality of metal posts are
electrically coupled to corresponding underlying ones of the first
plurality of metal posts.
24. The method of claim 23 further comprising encapsulating the
second plurality of metal posts, the third memory die, and the
fourth memory die in a second encapsulant.
25. The method of claim 23, wherein each of the second plurality of
metal posts overlaps one of the first plurality of metal posts.
Description
BACKGROUND
[0001] A High-Performance Computing (HPC) system often includes a
High-Bandwidth-Memory (HBM) stack bonded to a logic die. A HBM
stack typically includes a plurality of memory dies stacked
together, with higher memory dies bonded to the lower memory dies
through solder bonding or metal direct bonding through micro bumps.
Through-Silicon Vias (TSVs) are formed in the memory dies, so that
upper dies may be electrically connected to the logic die through
the TSVs.
BRIEF DESCRIPTION OF THE DRAWINGS
[0002] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is noted that, in accordance with the standard practice
in the industry, various features are not drawn to scale. In fact,
the dimensions of the various features may be arbitrarily increased
or reduced for clarity of discussion.
[0003] FIGS. 1 through 8 illustrate the cross-sectional views of
intermediate stages in the formation of a memory die stack attached
to a front side of a logic die in accordance with some
embodiments.
[0004] FIGS. 9, 10, 11A and 11B illustrate the cross-sectional
views of die stacks in accordance with some embodiments.
[0005] FIG. 12 through 18 illustrate the cross-sectional views of
intermediate stages in the formation of a memory die stack attached
to a backside of a logic die in accordance with some
embodiments.
[0006] FIG. 19 through 25 illustrate the cross-sectional views of
intermediate stages in the formation of a memory die stack, which
is attached to a backside of a logic die, in accordance with some
embodiments.
[0007] FIGS. 26 and 27 illustrate the cross-sectional views of an
example logic die before and after forming connections to
Through-Silicon Vias (TSVs) in accordance with some
embodiments.
[0008] FIG. 28 illustrates the cross-sectional view of an example
memory die in accordance with some embodiments.
[0009] FIGS. 29 through 32 illustrate some details of parts of the
structure in FIG. 8 in accordance with some embodiments.
[0010] FIG. 33 illustrates a process flow for forming a die stack
in accordance with some embodiments.
DETAILED DESCRIPTION
[0011] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the invention. Specific examples of components and arrangements are
described below to simplify the present disclosure. These are, of
course, merely examples and are not intended to be limiting. For
example, the formation of a first feature over or on a second
feature in the description that follows may include embodiments in
which the first and second features are formed in direct contact,
and may also include embodiments in which additional features may
be formed between the first and second features, such that the
first and second features may not be in direct contact. In
addition, the present disclosure may repeat reference numerals
and/or letters in the various examples. This repetition is for the
purpose of simplicity and clarity and does not in itself dictate a
relationship between the various embodiments and/or configurations
discussed.
[0012] Further, spatially relative terms, such as "underlying,"
"below," "lower," "overlying," "upper" and the like, may be used
herein for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0013] A die stack including memory dies and the method of forming
the same are provided in accordance with various embodiments. The
intermediate stages in the formation of the die stack are
illustrated in accordance with some embodiments. Some variations of
some embodiments are discussed. Throughout the various views and
illustrative embodiments, like reference numbers are used to
designate like elements. In accordance with some embodiments of the
present disclosure, a die stack includes a memory die stack bonded
to a device die such as a logic die. Instead of forming
Through-Silicon-Vias (TSVs) in the memory die, through-dielectric
vias are formed in the encapsulant (such as molding compound) for
encapsulating the memory dies, and the TSVs are used for connecting
the memory dies to the logic die. If the TSVs are formed in the
semiconductor substrates of memory dies, the semiconductor
substrates will adversely cause the loading to the TSVs due to the
parasitic capacitance between the TSVs and the semiconductor
substrates. In accordance with some embodiments of the present
disclosure, through-dielectric vias are formed in the dielectric
encapsulant, and hence there is no loading. Since the loading may
cause signal attenuation, by forming the through-dielectric vias,
the signal attenuation is avoided.
[0014] It is appreciated that embodiments will be described with
respect to a specific context, namely a die stack including memory
dies bonded to a device die. The concept of the discussed
embodiments may also be applied to the structure and the processing
of other structures including, and not limited to, the formation of
logic die stacks, IO die stack, or the die stack with the mixed
logic die(s), IO die(s), memory die(s), and the like. Embodiments
discussed herein are to provide examples to enable making or using
the subject matter of this disclosure, and a person having ordinary
skill in the art will readily understand modifications that can be
made while remaining within contemplated scopes of different
embodiments. Like reference numbers and characters in the figures
below refer to like components. Although method embodiments may be
discussed as being performed in a particular order, other method
embodiments may be performed in any logical order.
[0015] FIGS. 1 through 8 illustrate the cross-sectional views of
intermediate stages in the formation of a die stack in accordance
with some embodiments of the present disclosure. The corresponding
processes are also reflected schematically in the process flow 300
shown in FIG. 33.
[0016] Referring to FIG. 1, carrier 30 is provided, and release
film 32 is formed on carrier 30. Carrier 30 is formed of a
transparent material, and may be a glass carrier, a ceramic
carrier, an organic carrier, or the like. Carrier 30 may have a
round top-view shape, and may have a size of a silicon wafer.
Release film 32 is formed over carrier 30, and may be formed of a
Light-To-Heat-Conversion (LTHC) coating material. Release film 32
may be applied onto carrier 30 through coating. In accordance with
some embodiments of the present disclosure, release film 32 is
capable of being decomposed under the heat of light/radiation (such
as a laser beam), and hence can release carrier 30 from the
structure formed thereon.
[0017] Device wafer 20 is placed over release film 32. The
respective process is illustrated as process 302 in the process
flow shown in FIG. 33. In accordance with some embodiments, device
wafer 20 may be a logic wafer including a plurality of logic dies
20'. Accordingly, device wafer 20 is also referred to as a logic
wafer, and device dies 20' are also referred to as logic dies
hereinafter. In accordance with alternative embodiments, device
wafer 20 is another type of wafer such as an input-output wafer, an
interposer wafer, or the like. In accordance with some example
embodiments of the present disclosure, device dies 20' are Central
Processing Unit (CPU) dies, Graphic Processing Unit (GPU) dies,
mobile application dies, Micro Control Unit (MCU) dies, BaseBand
(BB) dies, Application processor (AP) dies, or the like. Device
dies 20' include semiconductor substrate 22 and interconnect
structure 24 formed on the semiconductor substrate 22.
[0018] Interconnect structure 24 is illustrated schematically in
FIG. 1, and some details are shown in FIG. 26 in accordance with
some examples. Referring to FIG. 26, device wafer 20 includes
substrate 22. In accordance with some embodiments, substrate 22 is
a semiconductor substrate, which may include or be a crystalline
silicon substrate, although it may comprise other semiconductor
materials such as silicon germanium, silicon carbon, or the like.
In accordance with some embodiments, device dies 20' include active
circuits 220, which include active devices such as transistors (not
shown) formed at the top surface of semiconductor substrate 22. In
accordance with some embodiments in which wafer 20 is an interposer
wafer, there is no circuit at the top surface of wafer 20.
Through-vias (sometimes referred to as Through-Substrate Vias
(TSVs)) 26 may be formed to extend into substrate 22. TSVs 26 are
also sometimes referred as through-silicon vias when formed in a
silicon substrate. Each of TSVs 26 may be encircled by an isolation
liner 28, which is formed of a dielectric material such as silicon
oxide, silicon nitride, or the like. Isolation liners 28 isolate
the respective TSVs 26 from semiconductor substrate 22. TSVs 26 and
isolation liners 28 extend from a top surface of semiconductor
substrate 22 to an intermediate level between the top surface and
the bottom surface of semiconductor substrate 22.
[0019] Interconnect structure 24 is formed over semiconductor
substrate 22. Interconnect structure 24 may include a plurality of
dielectrics layers 224. Metal lines 228 and vias 226 are formed in
dielectric layers 224, and are electrically connected to TSVs 26
and circuits 220. In accordance with some embodiments, dielectric
layers 224 are formed of silicon oxide, silicon nitride, silicon
carbide, silicon oxynitride, combinations thereof, and/or
multi-layers thereof. Dielectric layers 224 may comprise one or
more Inter-Metal-Dielectric (IMD) layers formed of low-k dielectric
materials having low k values, which may be, for example, lower
than about 3.0, or in the range between about 2.5 and about
3.0.
[0020] Electrical connectors 230 are formed at the top surface of
device dies 20'. In accordance with some embodiments, electrical
connectors 230 comprise metal pillars, metal pads, metal bumps
(sometimes referred to as micro-bumps), or the like. The material
of electrical connectors 230 may include non-solder materials,
which may include and may be copper, nickel, aluminum, gold,
multi-layers thereof, alloys thereof, or the like. Electrical
connectors 230 may be electrically connected to integrated circuits
220 through some other conductive features (not shown) including,
and not limited, aluminum pads, Post Passivation Interconnect
(PPI), or the like, and through metal lines 228 and vias 226. Also,
between electrical connectors 230 and metal lines 228, there may be
dielectric layers such as low-k dielectric layers, passivation
(non-low-k) layers, polymer layers, or the like. Electrical
connectors 230 may be encapsulated in dielectric layer 232. In
accordance with some embodiments of the present disclosure,
dielectric layer 232 is a polymer layer formed of, for example,
polybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), or the
like.
[0021] In accordance with some embodiments, as also shown in FIG.
26, instead of having electrical connectors 230 as being the top
conductive feature of device die 20', metal posts 38 may be formed
to protrude above the rest of device dies 20' (wafer 20). Metal
posts 38 are shown as dashed so show that they may be formed at
this stage, or formed in the step shown in FIG. 3. In accordance
with some embodiments, dielectric layer 232 is not formed, and
metal posts 38 are formed directly on metal pads 33. When these
embodiments are adopted, the process for forming metal posts 38 as
shown in FIG. 3 is skipped.
[0022] Throughout the description, the side of semiconductor
substrate 22 having active circuits 220 and interconnect structure
24 is referred to as a front side (or active side) of semiconductor
substrate 22, and the opposite side is referred to as a backside
(or inactive side) of semiconductor substrate 22. Also, the front
side of semiconductor substrate 22 is also referred to as the front
side (or active side) of device die 20' (and wafer 20), and the
backside of semiconductor substrate 22 is also referred to as the
backside (or inactive side) of device die 20' (wafer 20).
[0023] Referring back to FIG. 1, wafer 20 is placed with the front
side facing carrier 30. The details of interconnect structure 24 is
not shown, and may be found referring to FIG. 26. Next, as shown in
FIG. 2, substrate 22 is thinned, for example, in a Chemical
Mechanical Polish (CMP) process or a mechanical polish process. As
a result, TSVs 26 are exposed. The respective process is
illustrated as process 304 in the process flow shown in FIG.
33.
[0024] FIG. 3 illustrates the formation of redistribution structure
41 (41A), which includes dielectric layers 34 (including 34A and
34B) and Redistribution Lines (RDLs) 36. The respective process is
illustrated as process 306 in the process flow shown in FIG. 33. In
accordance with some embodiments, dielectric layers 34 are formed
of polymers such as PBO, polyimide, or the like. The formation
method includes coating a dielectric layer 34 in a flowable form,
and then curing the corresponding dielectric layer. In accordance
with alternative embodiments of the present disclosure, dielectric
layers 34 are formed of inorganic dielectric materials such as
silicon nitride, silicon oxide, silicon carbide, multi-layers
thereof, combinations thereof, or the like. The formation method
may include coating, Chemical Vapor Deposition (CVD), Atomic Layer
Deposition (ALD), Plasma-Enhanced Chemical Vapor Deposition
(PECVD), or other applicable deposition methods. Dielectric layers
layer 34 may include dielectric layers 34A and 34B, and more
dielectric layers may be formed, depending on the routing
requirement.
[0025] RDLs 36 are formed to have via portions extend into
dielectric layer 34A, and trace portions over dielectric layer 34A.
The formation process may include patterning dielectric layer 34A
to form openings, with TSVs 26 exposed through the openings,
forming a blanket metal seed layer (not shown), forming and
patterning a plating mask (such as a photo resist) to reveal some
portions of the metal seed layer, plating RDLs 36 in the openings
in the plating mask, removing the plating mask, and etching the
portions of the metal seed layer previously covered by the plating
mask. In accordance with some embodiments of the present
disclosure, the metal seed layer includes a titanium layer and a
copper layer over the titanium layer. The formation of the metal
seed layer may include, for example, PVD. In accordance with some
embodiments of the present disclosure, the plated material
comprises copper or a copper alloy. The plating may include
electro-chemical plating or electro-less plating. Throughout the
description, dielectric layers 34 and the RDLs 36 formed therein
are in combination referred to as redistribution structure 41.
[0026] Although one layer of RDLs 36 is illustrated, more layers of
RDLs may be formed. Metal posts 38 are then formed. The respective
process is illustrated as process 308 in the process flow shown in
FIG. 33. In accordance with some embodiments, the formation process
includes patterning dielectric layer 34B to form openings, with
some pad portions of RDLs 36 exposed through the openings, forming
a blanket metal seed layer (not shown), forming and patterning
another plating mask (such as a photo resist) to reveal some
portions of the metal seed layer, plating metal posts 38 in the
openings in the plating mask, removing the plating mask, and
etching the portions of the metal seed layer previously covered by
the plating mask to form metal posts 38. Vias 40 are also formed in
the same process as forming metal posts 38, and extend into
dielectric layer 34B.
[0027] FIG. 4 illustrates the placement of tier-1 memory dies 42.
The respective process is illustrated as process 310 in the process
flow shown in FIG. 33. Memory dies 42 may be attached to dielectric
layers 34 through Die-Attach Films (DAFs) 44, which are adhesive
films. DAFs 44 may be pre-attached on the respective wafers that
have memory dies 42 therein before the wafers are sawed into memory
dies 42. Memory dies 42 may include semiconductor substrates (240,
FIG. 28) having a back surface (the surface facing down) in
physical contact with the respective DAFs 44. Since carrier 30 is
at wafer level, although two memory dies 42 are illustrated as a
group, a plurality of identical memory groups are placed over
redistribution structure 41, with each of the groups overlapping
one of device dies 20'. Also, there may be more memory dies such as
4, 6, 8 or more in a group.
[0028] The details of memory dies 42 are not shown in FIG. 4, and
some of the details are illustrated in FIG. 28 in accordance with
some embodiments of the present disclosure. FIG. 28, in addition to
memory die 42, also illustrate some other portions, which will be
discussed in subsequent paragraphs. Memory die 42 may include
semiconductor substrate 240, integrated circuits 242, which may
include active devices such as transistors, diode, or the like.
There is no through-via penetrating through semiconductor substrate
240. Memory dies 42 may include memories such as Dynamic Random
Access Memories (DRAMs), Static Random Access Memories (SRAMs), or
other types of memories. For example, FIG. 28 illustrates some
stack capacitors, which may be used in DRAMs. Top metal contact
(CTM) 252 and bottom contact metal 250 are also illustrated. In
accordance with some embodiments, the bottom contact metal 250 is
used as the bit-line, and word-lines 256 may be embedded in
semiconductor substrate 240. Interconnect structure 244 is formed
over substrate 240, and may include dielectric layers, metal lines,
vias, and the like. The dielectric layers may include low-k
dielectric layers and/or non-low-k dielectric layers. In accordance
with some embodiments, interconnect structure 244 includes a
plurality of metal layers, such as M1, M2, M3, and M4 (or more) as
shown in FIG. 28. Passivation layer 246, which is formed of a
non-low-k dielectric material such as Undoped silicate glass,
silicon oxide, silicon nitride, or multi-layers thereof, is formed
over interconnect structure 244. Metal pads 248, which may be parts
of metal layer M4, are formed over and electrically coupled to the
metal lines and vias in interconnect structure 244. Metal pads 248
may be formed of aluminum copper, for example. Electrical
connectors 48, which may be formed of copper, nickel, titanium, or
the like, may be formed over and connected to metal pads 248.
Dielectric layer 46, which may be formed of PBO, polyimide, or the
like, may be formed to encapsulate electrical connectors 48.
[0029] Referring back to FIG. 4, memory dies 42 and metal posts 38
are encapsulated in encapsulant 50. The respective process is
illustrated as process 312 in the process flow shown in FIG. 33.
Encapsulant 50 fills the gaps between neighboring metal posts 38
and the gaps between metal posts 38 and memory dies 42. Encapsulant
50 may include a molding compound, a molding underfill, an epoxy,
and/or a resin. The top surface of encapsulant 50 is higher than
the top ends of electrical connectors 48 and metal posts 38. When
formed of molding compound, encapsulant 50 may include a base
material, which may be a polymer, a resin, an epoxy, or the like,
and filler particles in the base material. The filler particles may
be dielectric particles of SiO.sub.2, Al.sub.2O.sub.3, silica, or
the like, and may have spherical shapes. Also, the spherical filler
particles may have a plurality of different diameters.
[0030] In a subsequent step, a planarization process such as a CMP
process or a mechanical grinding process is performed to thin
encapsulant 50 and memory dies 42, until metal posts 38 and
electrical connectors 48 are exposed. Due to the planarization
process, the top ends of metal posts 38 are substantially level
(coplanar) with the top surfaces of electrical connectors 48, and
are substantially coplanar with the top surface of encapsulant 50.
Metal posts 38 are alternatively referred to as through-vias 38 in
subsequent paragraphs since they penetrate through encapsulant
50.
[0031] FIG. 5 illustrates the formation of another redistribution
structure 41(41B), which includes RDLs 36 and dielectric layers 34.
The respective process is illustrated as process 314 in the process
flow shown in FIG. 33. To distinguish between different tiers of
redistribution structure 41, the redistribution structure 41
underlying memory dies 42 is referred to as (tier-1) redistribution
structure 41A, and the redistribution structure 41 overlying memory
dies 42 is referred to as (tier-2) redistribution structure 41B.
Also, the illustrated tier-1 memory dies 42 are identified as
memory dies 42A, and the illustrated through-vias 38 may be
identified as (tier-1) through-vias 38A.
[0032] The RDLs 36 in tier-2 redistribution structure 41B are
electrically connected to through-vias 38A and electrical
connectors 48 in memory dies 42. Accordingly, through-vias 38A
electrically connect memory dies 42 to device die 20'. It is
appreciated that the RDLs 36 are shown schematically, while RDLs 36
do not electrically short through-vias 38 and electrical connectors
48 together. Instead, different through-vias 38 may be connected to
different electrical connectors 48 through different RDLs 36.
Similarly, RDLs 36 do not electrically short electrical connectors
48 together.
[0033] FIG. 6 illustrates the formation/adhesion of more tiers of
memory dies 42 (including 42B, 42C, and 42D), through-vias 38
(including 38B, 38C, and 38D), and redistribution structures 41
(including 41C, 41D, and 41E), etc. The respective process is
illustrated as process 316 in the process flow shown in FIG. 33.
The formation processes and the corresponding materials may be
found referring to the discussion of FIGS. 3 through 5, and hence
are not repeated herein. Memory dies 42C and 42D may be identical
to, or different from, memory dies 42A and 42B. In the final
result, all of the memory dies 42 are electrically and signally
connected to the respective underlying device die 20'. Throughout
the description, the features over release film 32 in combination
are collectively referred to as reconstructed wafer 54.
[0034] Reconstructed wafer 54 is then demounted from carrier 30,
for example, by projecting a laser beam on release film 32. Release
film 32 is decomposed under the heat of the laser beam. The
resulting reconstructed wafer 54 is shown in FIG. 7. Next, as shown
in FIG. 8, redistribution structure 52 is formed on the
interconnect structure 24 of device die 20' in accordance with some
embodiment. The respective process is illustrated as process 318 in
the process flow shown in FIG. 33. In accordance with alternative
embodiments, the formation of redistribution structure 52 is
skipped. Accordingly, the process 318 in FIG. 33 is illustrated
using dashed lines to indicate it may or may not be performed.
Before the formation of redistribution structure 52, the dielectric
layer 232 (FIG. 26) that covers electrical connectors 230 are
thinned, until electrical connectors 230 are exposed. The detail of
redistribution structure 52 is not shown. Redistribution structure
52 may be formed, for example, using the similar process and
materials for forming redistribution structure 41. Redistribution
structure 52 includes dielectric layers and redistribution lines in
the dielectric layers. Electrical connectors 55 are then formed on
redistribution structure 52, and are electrically connected to
device die 20' through redistribution structure 52. The respective
process is illustrated as process 320 in the process flow shown in
FIG. 33. Electrical connectors 55 may include metal pillars, solder
regions, Under-Bump Metallurgies (UBMs), and the like.
[0035] FIG. 27 illustrates device die 20' after the formation of
redistribution structure 52 and electrical connectors 55 in
accordance with some embodiments. The redistribution structures and
memory die stack over device die 20' is not shown.
[0036] Referring back to FIG. 8, reconstructed wafer 54 is
singulated in a die-saw process. The respective process is
illustrated as process 322 in the process flow shown in FIG. 33.
For example, a blade may saw-through the scribe lines between
device dies 20' to separate reconstructed wafer 54 into a plurality
of identical packages 54', each having the structure as illustrated
in accordance with some examples. Package 54' may then be bonded to
another package component (not shown) such as an interposer, a
package substrate, a printed circuit board, or the like, with
underfill disposed in between, for example.
[0037] In FIG. 8, through-vias 38 are illustrated as forming common
signal channels that are shared by all of the tiers of memory dies
42. In accordance with alternative embodiments, each of the memory
dies 42 may have its dedicated signal channel(s), and some of
through-vias 38 may be connected to one or some (but not all) tiers
of memory dies 42.
[0038] FIG. 28 illustrates the amplified view of region 91 in FIG.
8 in accordance with some embodiments. In the amplified view,
memory die 42 is encapsulated in encapsulant 50, and the top
surfaces of metal pads 48 are coplanar with the top surface of
through-via 38. Redistribution structure 41 is formed over memory
die 42 and through-vias 38. Although one layer of RDLs 36 is
illustrated, there may be a plurality of layers (such as two
layers, three layers, or more) of RDLs 36.
[0039] FIGS. 29 through 32 illustrate the amplified views of region
92 in FIG. 8 in accordance with some embodiments of the present
disclosure. Referring to FIG. 29, DAF 44 adheres memory die 42 to
the top dielectric layer 34 in redistribution structure 41. RDL 36
has a via portion contacting a top surface of metal pad 48, which
is located in dielectric layer 46. Dielectric layer 46 may be a
polymer layer, which may be formed of polyimide, PBO, or the like.
Metal pad 248 may be an aluminum-containing metal pad, which may be
an aluminum copper pad in accordance with some embodiments.
Alternatively, metal pad 248 may be formed of other materials such
as copper or a copper alloy. Passivation layer 246 may be formed of
silicon oxide, silicon nitride, multi-layers thereof, or
combinations thereof.
[0040] FIG. 30 illustrates the amplified view of region 92 in FIG.
8 in accordance with alternative embodiments. These embodiments are
similar to the embodiments shown in FIG. 29, except that the top
metal layer, which is the same metal layer comprising metal pads 48
therein, is also used for routing purpose. Alternatively stated,
there are metal lines that are at the same level as, and are formed
simultaneously as, metal pads 48, wherein the metal lines, as
schematically illustrated, may extend horizontally to route the
electrical signals. Accordingly, the metal layer in which metal
pads 48 are located are considered as one of the metal layers (for
routing purpose) in memory die 42. In accordance with some
embodiments, metal pads 248, on which metal pads 48 and the
corresponding via are landed, are aluminum pads or aluminum copper
pads.
[0041] FIG. 31 illustrates the amplified view of region 92 in FIG.
8 in accordance with alternative embodiments. These embodiments are
similar to the embodiments shown in FIG. 29, except that two layers
of RDLs 36 are illustrated as an example.
[0042] FIG. 32 illustrates the amplified view of region 92 in FIG.
8 in accordance with alternative embodiments. These embodiments are
similar to the embodiments shown in FIG. 29, except that there are
no aluminum pads formed directly underlying metal pads 48. Rather,
the via portions of metal pads 48 are landed on the copper pads in
the top metal layer (for example M3).
[0043] In the structure shown in FIG. 8, memory dies 42 do not
include through-substrate vias in the corresponding semiconductor
substrates. The electrical connection of the upper-tier memory dies
to device die 20' is made through through-vias 38. Since
through-vias 38 are formed in encapsulant 50, which is formed of a
dielectric material, there is no parasitic capacitance between
through-vias 38 and encapsulant 50 (unlike between TSVs and
semiconductor substrates), and the resulting package is also free
from the loading that may present in the through-silicon vias.
[0044] FIGS. 9, 10, 11A and 11B illustrate packages 54' formed in
accordance with alternative embodiments. Unless specified
otherwise, the materials and the formation processes of the
components in these embodiments (and the embodiments shown in FIGS.
12 through 28) are essentially the same as the like components,
which are denoted by like reference numerals in the embodiments
shown in FIGS. 1 through 8. The details regarding the formation
process and the materials of the components shown in FIGS. 9
through 28 may thus be found in the discussion of the embodiment
shown in FIGS. 1 through 8.
[0045] In the above-discussed embodiments, through-vias 38 are
formed between memory dies 42, and TSVs 26 are formed in the middle
of device die 20'. Accordingly, the resulting structure does not
need long horizontal RDLs to connect TSVs 26 to through-vias 38.
FIG. 9 illustrates an embodiment similar to the embodiments shown
in FIG. 8, except that there may be a single memory die 42 in each
tier and over each of device dies 20', and that through-vias 38 are
accordingly formed on the opposite sides of the memory die 42. In
accordance with some embodiments, TSVs 26 are formed in the middle
of device die 20' as illustrated. In accordance with alternative
embodiments, TSVs 26 may be formed in regions 57, which are close
to the edges of device die 20' to reduce the lengths of the lateral
distribution lines in redistribution structure 41A.
[0046] FIG. 10 illustrates an embodiment similar to the embodiments
shown in FIG. 8, except that through-vias 38 are formed on the
opposite sides of the memory dies 42, rather than between memory
dies 42. In accordance with some embodiments, TSVs 26 may be formed
close to the edges of device die 20'. Instead of placing a single
memory die 42 in each tier, the function of the single memory die
may be split into two memory dies, and the memory dies 42 may be
placed close to the opposite edges of the device dies 20', so that
the lengths of horizontal RDLs 36 may be shortened. These
embodiments may be applied when device die 20' has a lateral size
much larger than the lateral size of memory die 42. Similarly, TSVs
26 may be formed in the middle of device die 20' as illustrated, or
may be formed in regions 57, which are close to the edges of device
die 20' to reduce the lengths of the lateral distribution lines 36
in redistribution structure 41A.
[0047] FIG. 11A illustrates an embodiment similar to the
embodiments shown in FIG. 8, except that in each tier, memory
packages 43, rather than memory dies, are placed. Memory packages
43 may be identical to each other or may be different from each
other. Each of memory packages 43 may include memory die 42' and
memory die 42'', which may be the same as each other, or different
from each other. Each of memory dies 42' and 42'' may be
encapsulated in encapsulant 58, which may be molding compound, for
example. Encapsulant 58 may also include a base material such as
epoxy, resin, polymer, or the like, and filler particles therein.
The filler particles may be spherical, and may have different
diameters. Redistribution structures 41', which may be formed
similar to redistribution structures 41, are formed over, and
electrically connected to the underlying memory dies 42' and 42''.
Redistribution structures 41' may also include dielectric layers
and RDLs therein. Through-vias 61 may be formed in the upper
encapsulant 58, and electrically connect memory dies 42' to the
RDLs 36 in redistribution structures 41.
[0048] FIG. 11B illustrates an embodiment similar to the
embodiments shown in FIG. 8, except that memory dies 42 face down
rather than face up. Accordingly, some of the memory dies 42, such
as the tier-3 and tier-4 dies, may overlap the corresponding
through-vias 38 that connect these memory dies 42 to device die
20'. Furthermore, the each of bond pads 48 may overlap a plurality
of through-vias 38 at different levels. Some other bond pads 48 of
some memory dies (such as the tier-1 dies and tier-2 dies) may
still be connected to horizontal RDLs 36.
[0049] FIGS. 12 through 18 illustrate the cross-sectional views of
intermediate stages in the formation of a die stack in accordance
with alternative embodiments. These embodiments are similar to the
embodiments as shown in FIGS. 1 through 10, 11A, and 11B, except
that memory dies are attached to the front side (rather than the
backside) of a device die. Referring to FIG. 12, device wafer 20,
which includes device dies 20', is provided. The front side of
device wafer 20 is shown as facing up, with interconnect structure
24 being over semiconductor substrate 22 and TSVs 26. As shown in
FIG. 26, which shows some details of interconnect structure 24, in
interconnect structure 24, electrical connectors 230 are covered by
dielectric layer 232. A planarization process is then performed to
thin dielectric layer 232, until electrical connectors 230 are
exposed.
[0050] Next, referring to FIG. 13, a tier-1 redistribution
structure 41 and metal posts 38 are formed. The formation processes
and materials are essentially the same as discussed in the
preceding embodiments, and are not repeated herein. Some
redistribution lines 36 may be in physical contact with some of
electrical connectors 230 as shown in FIG. 26.
[0051] FIG. 14 illustrates the placement of tier-1 memory dies 42,
and the encapsulation of memory dies 42 and metal posts 38 in
encapsulant 50. A planarization process is then preformed on
encapsulant 50 to reveal metal posts 38 and electrical connectors
48. Next, as shown in FIG. 15, tier-2 redistribution structure 41
is formed. In subsequent processes, more tiers of metal posts 38,
encapsulant 50, and redistribution structures 41 are formed, and
the resulting structure is shown in FIG. 16, which structure is
referred to as reconstructed wafer 54 hereinafter.
[0052] Referring to FIG. 17, which illustrates reconstructed wafer
54 as being flipped upside-down compared to FIG. 16, a
planarization process such as a CMP process or a mechanical
grinding process is performed, until TSVs 26 are exposed. Next, as
shown in FIG. 18, redistribution structure 52' is formed on
semiconductor substrate 22 of device die 20'. Redistribution
structure 52' may be formed, for example, using the similar process
and materials for forming redistribution structure 41.
Redistribution structure 52' may include dielectric layers 53A and
53B, and redistribution lines 59 in dielectric layers 53A and 53B.
In accordance with some embodiments of the present disclosure,
dielectric layers 53A and 53B are formed of a polymer such as PBO
or polyimide. Dielectric layers 53A may be in physical contact with
both semiconductor substrate 22 and possibly TSVs 26. Electrical
connectors 55 are then formed over redistribution structure 52',
and are electrically connected to device die 20' through
redistribution lines 59. Electrical connectors 55 may include metal
pillars, solder regions, Under-Bump Metallurgies (UBMs), and/or the
like. In subsequent processes, reconstructed wafer 54 is sawed
apart in a singulation process into discrete packages 54', which
may then be bonded to additional package components such as
interposers, packages substrates, printed circuit boards, or the
like, with an underfill being disposed therebetween.
[0053] FIGS. 19 through 25 illustrate the cross-sectional views of
intermediate stages in the formation of a memory die stack and a
corresponding package in accordance with alternative embodiments.
These embodiments are similar to the embodiments as shown in FIGS.
1 through 18, except that a memory die stack is formed first, and
then bonded to a logic die through a bonding process, rather than
forming the memory die stack directly from the logic die/wafer.
[0054] Referring to FIG. 19, carrier 60 is provided, with release
film 62 formed thereon. A memory die stack 66 including memory dies
42, metal posts 38, encapsulant 50, and redistribution structures
41 are formed tier-by-tier. Memory die stack 66 may also include
buffer dielectric 39, which may be formed of or include, for
example, PBO or polyimide. The formation processes and the
materials of the memory die stack 66 are similar to what are
discussed referring to the embodiments shown in FIGS. 1 through 8,
and are not repeated herein. It is appreciated that in the tier-1
encapsulant 50, through-vias 38 are not formed. Next, referring to
FIG. 20, electrical connectors 64 are formed to electrically couple
to the RDLs 38 and through-vias 38. Electrical connectors 64 may
include metal pillars, metal pads, solder regions, and/or the like.
Reconstructed wafer 66 is thus formed. In a subsequent process,
reconstructed wafer 66 is de-bonded from carrier 60, followed by a
singulation process to saw reconstructed wafer 66 into a plurality
of memory stacks 66'.
[0055] FIGS. 21 through 25 illustrate the bonding of memory stacks
66' to device wafer 20 (and device die 20'). Referring to FIG. 21,
device wafer 20 is placed on carrier 70 through release film 72.
Device wafer 20 has its front side facing down, and hence
interconnect structure 24 is between semiconductor substrate 22 and
carrier 70. In accordance with some embodiments, solder regions 74
(sometimes referred to as pre-solder regions) are pre-formed on
interposer wafer 20, and may be formed in dielectric layer 76,
which may be formed of or include a polymer such as PBO, polyimide,
or the like. The solder regions 74 may be formed on, and possibly
contacting, electrical connectors 230 as shown in FIG. 26.
Alternatively, solder regions 74 may replace electrical connectors
230 as shown in FIG. 26.
[0056] Next, as shown in FIG. 22, a planarization process such as a
CMP process or a mechanical grinding process is performed on
semiconductor substrate 22 to reveal TSVs 26. Device wafer 20 is
than singulated to form device die 20', with one of the device die
20' being shown in FIG. 23. FIG. 23 also illustrates the bonding of
device dies 20' onto interposer wafer 78 through solder regions 74.
In accordance with some embodiments, interposer wafer 78 has a
structure similar to device wafer 20 as shown in FIG. 26, except
that interposer wafer 78 does not include integrated circuits 220
such as active devices therein. Interposer wafer 78 may include or
may be free from passive devices such as resistors, capacitors,
inductors, or the like therein. TSVs 82 are formed to extend into
semiconductor substrate 81, which may be a semiconductor substrate
such as a silicon substrate. Insulation liners 83 encircle TSVs 82.
Interposer wafer 78 may include interconnect structure 80 at its
front surface. The structure of the interconnect structure 80 is
not shown, and may be similar to the interconnect structure 24 as
shown in FIG. 26. In accordance with some embodiments of the
present disclosure, the front side (the side having interconnect
structure 80) of interposer wafer 78 faces up, as shown in FIG. 23.
In accordance with alternative embodiments of the present
disclosure, the front side of interposer wafer 78 faces down, and
solder regions 74 may be directly bond to TSVs 82, which are
exposed by polishing substrate 81 in interposer wafer 78. Underfill
84 is disposed between device die 20' and interposer wafer 78.
Although one device die 20' is shown, a plurality of device dies
20' are placed on interposer wafer 78, for example, with each of
plurality of device dies 20' overlapping one of the interposer dies
in interposer wafer 78.
[0057] FIG. 24 illustrates the bonding of a plurality of memory
stacks 66', each onto one of device dies 20'. Underfill 84' is
disposed between memory stack 66' and device die 20'. Encapsulant
86, for example, a molding compound, an epoxy, or the like, is
encapsulated on memory stacks 66' and device dies 20' to form
reconstructed wafer 88. Encapsulant 86 may also include a base
material and spherical fillers in the base material.
[0058] In a subsequent process, interposer wafer 78 is polished to
thin semiconductor substrate 81, revealing TSVs 82. Solder regions
90 (FIG. 25) may be formed on TSVs 82. Alternative, another
redistribution structure may be formed to connect solder regions 90
to TSVs 82. The reconstructed wafer 88 may then be sawed to form a
plurality of packages 88'. Interposer wafer 78 is sawed into
interposer dies, with one of interposer dies 78' shown in FIG. 25.
FIG. 25 also illustrates the bonding of package 88' to a package
component 92, which may be a package substrate, a frame, a printed
circuit board, or the like.
[0059] In above-illustrated embodiments, some processes and
features are discussed in accordance with some embodiments of the
present disclosure to form a three-dimensional (3D) package. Other
features and processes may also be included. For example, testing
structures may be included to aid in the verification testing of
the 3D packaging or 3DIC devices. The testing structures may
include, for example, test pads formed in a redistribution layer or
on a substrate that allows the testing of the 3D packaging or 3DIC,
the use of probes and/or probe cards, and the like. The
verification testing may be performed on intermediate structures as
well as the final structure. Additionally, the structures and
methods disclosed herein may be used in conjunction with testing
methodologies that incorporate intermediate verification of known
good dies to increase the yield and decrease costs.
[0060] The embodiments of the present disclosure have some
advantageous features. By forming redistribution lines directly
from device dies (such as logic dies) and/or memory dies, the
interconnection between the logic dies and memory dies is made
through RDLs that are formed directly from device dies and memory
dies, rather than through metal bumps or solder regions. The height
of the resulting package is reduced due to the removed metal bumps
and solder regions, allowing more memory dies to be stacked in a
same height. Also, through-vias are formed in encapsulant materials
rather than in semiconductor substrates of the memory dies.
Accordingly, the loading resulted from the parasitic capacitance
between the TSVs in memory dies and the semiconductor substrates is
eliminated. Since memory dies often occupy a smaller footprint than
the underlying device die, the formation of the through-vias in an
encapsulant do not cause the increase in the occupied area of the
package.
[0061] In accordance with some embodiments of the present
disclosure, a method includes forming a memory die stack comprising
placing a first memory die on a lower dielectric layer; forming a
first plurality of metal posts over the lower dielectric layer;
encapsulating the first memory die in a first encapsulant; forming
a first redistribution structure comprising forming a first
plurality of dielectric layers over the first encapsulant; and
forming a first plurality of redistribution lines in the first
plurality of dielectric layers, wherein the first plurality of
redistribution lines are electrically connected to the first
plurality of metal posts and the first memory die; placing a second
memory die over the first redistribution structure; forming a
second plurality of metal posts over the first redistribution
structure, wherein the second plurality of metal posts are
electrically connected to the first plurality of metal posts;
encapsulating the second memory die in a second encapsulant;
forming a second redistribution structure comprising forming a
second plurality of dielectric layers over the second encapsulant;
and forming a second plurality of redistribution lines in the
second plurality of dielectric layers, wherein the second plurality
of redistribution lines are electrically connected to the second
plurality of metal posts and the second memory die. In an
embodiment, the first memory die and the second memory die are free
from through-substrate vias therein. In an embodiment, the first
memory die is placed on the lower dielectric layer through a first
adhesive film, and the second memory die is placed on the second
redistribution structure through a second adhesive film. In an
embodiment, the method further includes forming an additional
redistribution structure comprising forming an additional plurality
of dielectric layers over a device die comprising a semiconductor
substrate and through-vias in the semiconductor substrate, wherein
the lower dielectric layer is comprised in the additional plurality
of dielectric layers; and forming an additional plurality of
redistribution lines in the additional plurality of dielectric
layers, wherein the additional plurality of redistribution lines
are electrically connected to the through-vias. In an embodiment,
the additional redistribution structure is formed on a front side
of the device die, and the device die comprises electrical
connectors on the front side, and a first polymer layer
encapsulating the electrical connectors therein. In an embodiment,
the forming the additional redistribution structure comprises
thinning the first polymer layer to reveal the electrical
connectors; and disposing a second polymer layer over and
contacting the electrical connectors and the first polymer layer,
wherein the second polymer layer is comprised in the additional
plurality of dielectric layers. In an embodiment, the additional
redistribution structure is formed on a back side of the device
die. In an embodiment, the forming the additional redistribution
structure comprises thinning the semiconductor substrate of the
device die to reveal the through-vias; and disposing a polymer
layer over and contacting both the through-vias and the
semiconductor substrate, wherein the polymer layer is comprised in
the additional plurality of dielectric layers. In an embodiment,
the method further includes bonding the memory die stack on a
device die, wherein the first plurality of metal posts are
electrically connected to through-vias in a semiconductor substrate
of the device die.
[0062] In accordance with some embodiments of the present
disclosure, a method includes thinning a semiconductor substrate of
a device die to reveal through-substrate vias that extend into the
semiconductor substrate; forming a first redistribution structure
comprising forming a first plurality of dielectric layers over the
semiconductor substrate; and forming a first plurality of
redistribution lines in the first plurality of dielectric layers,
wherein the first plurality of redistribution lines are
electrically connected to the through-substrate vias; placing a
first memory die over the first redistribution structure; forming a
first plurality of metal posts over the first redistribution
structure, wherein the first plurality of metal posts are
electrically connected to the first plurality of redistribution
lines; encapsulating the first memory die in a first encapsulant;
and forming a second plurality of redistribution lines over, and
electrically connected to, the first plurality of metal posts and
the first memory die. In an embodiment, the method further includes
forming a second redistribution structure comprising forming a
second plurality of dielectric layers over the first encapsulant,
wherein the second plurality of redistribution lines are in the
second plurality of dielectric layers. In an embodiment, a bottom
dielectric layer in the first plurality of dielectric layers are in
physical contact with the semiconductor substrate and the
through-substrate vias. In an embodiment, the through-substrate
vias are separated from the semiconductor substrate by insulation
liners, and the bottom dielectric layer is further in contact with
the insulation liners. In an embodiment, the forming the first
plurality of dielectric layers comprises forming a plurality of
polymer layers. In an embodiment, the first memory die comprises an
additional semiconductor substrate, and the first memory die is
free from through-vias in the additional semiconductor
substrate.
[0063] In accordance with some embodiments of the present
disclosure, an integrated circuit structure includes a device die.
The device die includes a semiconductor substrate; a plurality of
through-substrate vias penetrating through the semiconductor
substrate; and an interconnect structure on a side of the
semiconductor substrate; a first redistribution structure over the
device die and comprising a first plurality of dielectric layers;
and a first plurality of redistribution lines in the first
plurality of dielectric layers, wherein the first plurality of
redistribution lines are electrically coupled to the device die.
The integrated circuit structure further includes a first memory
die over the first redistribution structure; a first plurality of
metal posts over the first redistribution structure, wherein the
first plurality of metal posts are electrically connected to the
first plurality of redistribution lines; a first encapsulant
encapsulating the first memory die and the first plurality of metal
posts therein; and a second plurality of redistribution lines over
the first encapsulant and electrically connected to the first
memory die and the first plurality of metal posts. In an
embodiment, the first memory die comprises an additional
semiconductor substrate, and the first memory die is free from
through-vias penetrating through the additional semiconductor
substrate. In an embodiment, the integrated circuit structure
further includes a second memory die over and electrically
connected to the first plurality of metal posts. In an embodiment,
the first plurality of dielectric layers comprise a bottom
dielectric layer in physical contact with the semiconductor
substrate of the device die. In an embodiment, the interconnect
structure is between the first redistribution structure and the
semiconductor substrate.
[0064] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
* * * * *