U.S. patent application number 16/240335 was filed with the patent office on 2020-07-09 for method of forming a buried interconnect and the resulting devices.
The applicant listed for this patent is GLOBALFOUNDRIES Inc.. Invention is credited to Lars W. Liebmann, Bipul C. Paul, Ruilong Xie.
Application Number | 20200219813 16/240335 |
Document ID | / |
Family ID | 71404510 |
Filed Date | 2020-07-09 |
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United States Patent
Application |
20200219813 |
Kind Code |
A1 |
Paul; Bipul C. ; et
al. |
July 9, 2020 |
METHOD OF FORMING A BURIED INTERCONNECT AND THE RESULTING
DEVICES
Abstract
A method of forming a buried local interconnect is disclosed
including, among other things, forming a first sacrificial layer
embedded between a first semiconductor layer and a second
semiconductor layer, forming a plurality of fin structures above
the second semiconductor layer, forming a mask layer having an
opening positioned between an adjacent pair of the fin structures,
removing a portion of the second semiconductor layer exposed by the
opening to expose the first sacrificial layer and define a first
cavity in the second semiconductor layer, removing portions of the
first sacrificial layer positioned between the first semiconductor
layer and the second semiconductor layer to form lateral cavity
extensions of the first cavity, forming a first liner layer in the
first cavity, and forming a conductive interconnect in the first
cavity over the first liner layer.
Inventors: |
Paul; Bipul C.;
(Mechanicville, NY) ; Liebmann; Lars W.;
(Mechanicville, NY) ; Xie; Ruilong; (Niskayuna,
NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
GLOBALFOUNDRIES Inc. |
Grand Cayman |
|
KY |
|
|
Family ID: |
71404510 |
Appl. No.: |
16/240335 |
Filed: |
January 4, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/823418 20130101;
H01L 29/0847 20130101; H01L 21/823481 20130101; H01L 27/1104
20130101; H01L 21/0217 20130101; H01L 21/0228 20130101; H01L 21/308
20130101; H01L 21/76831 20130101; H01L 23/535 20130101; H01L
21/823431 20130101; H01L 29/66545 20130101; H01L 21/02274 20130101;
H01L 21/823475 20130101; H01L 29/0669 20130101; H01L 21/30604
20130101; H01L 27/0886 20130101 |
International
Class: |
H01L 23/535 20060101
H01L023/535; H01L 21/8234 20060101 H01L021/8234; H01L 21/308
20060101 H01L021/308; H01L 21/306 20060101 H01L021/306; H01L 21/768
20060101 H01L021/768; H01L 29/06 20060101 H01L029/06; H01L 27/088
20060101 H01L027/088; H01L 29/08 20060101 H01L029/08 |
Claims
1.-10. (canceled)
11. A device, comprising: a first semiconductor layer; a second
semiconductor layer positioned above the first semiconductor layer;
a first fin structure and a second fin structure positioned above
the second semiconductor layer; and a conductive interconnect
positioned in the first semiconductor layer, wherein at least a
first portion of the conductive interconnect extends laterally
under at least a portion of the first fin structure and a second
portion of the conductive interconnect extends laterally under at
least a portion of the second fin structure and wherein the first
and second portions of the conductive interconnect are positioned
between the first semiconductor layer and the second semiconductor
layer.
12. The device of claim 11, further comprising a dielectric liner
positioned between the conductive interconnect and the first
semiconductor layer and between the conductive interconnect and the
second semiconductor layer.
13. (canceled)
14. The device of claim 11, wherein an upper surface of the
conductive interconnect is positioned at a level that is below a
level of an upper surface of the second semiconductor layer.
15. The device of claim 11, further comprising a contact positioned
between the first and second fin structures and contacting the
conductive interconnect.
16. The device of claim 11, wherein the conductive interconnect has
a T-shaped vertical cross-section.
17. The device of claim 11, wherein the first fin structure
comprises a first source/drain region, the second fin structure
comprises a second source/drain region, and the device further
comprises: a first contact contacting the first source/drain region
and the conductive interconnect; and a second contact contacting
the second source/drain region.
18. A device, comprising: a first semiconductor layer; a second
semiconductor layer positioned above the first semiconductor layer;
a first fin structure and a second fin structure positioned above
the second semiconductor layer, wherein the first fin structure
comprises a first source/drain region; a conductive interconnect
positioned in the first semiconductor layer and having a T-shaped
vertical cross-section, wherein first and second portions of the
conductive interconnect are positioned between the first
semiconductor layer and the second semiconductor layer; and a first
contact contacting the first source/drain region and the conductive
interconnect.
19. The device of claim 18, wherein the second fin structure
comprises a second source/drain region, and the device further
comprises a second contact contacting the second source/drain
region.
20. The device of claim 18, wherein the first portion of the
conductive interconnect extends laterally under at least a portion
of the first fin structure and the second portion of the conductive
interconnect extends laterally under at least a portion of the
second fin structure.
21. A device, comprising: a first fin structure and a second fin
structure positioned above a first semiconductor layer; a
conductive interconnect positioned in the first semiconductor
layer, wherein at least a first portion of the conductive
interconnect extends laterally under at least a portion of the
first fin structure and a second portion of the conductive
interconnect extends laterally under at least a portion of the
second fin structure, wherein the conductive interconnect has a
T-shaped vertical cross-section; a dielectric liner positioned
between the conductive interconnect and the first semiconductor
layer; a contact positioned between the first and second fin
structures and contacting the conductive interconnect; and an
isolation structure positioned on an upper surface of the
conductive interconnect, wherein the contact positioned between the
first and second fin structures that contacts the conductive
interconnect extends through a portion of the isolation
structure.
22. The device of claim 21, wherein an upper surface of the
conductive interconnect is positioned at a level that is below a
level of an upper surface of the second semiconductor layer.
23. (canceled)
24. The device of claim 21, wherein the first fin structure
comprises a first source/drain region, the second fin structure
comprises a second source/drain region, and the device further
comprises: a first contact contacting the first source/drain region
and the conductive interconnect; and a second contact contacting
the second source/drain region.
25. The device of claim 21, wherein the first semiconductor layer
comprises a second semiconductor layer, a third semiconductor layer
positioned above the second semiconductor layer, and a fourth
semiconductor layer positioned above the third semiconductor layer,
a first portion of the conductive interconnect extends laterally
under at least a portion of the first fin structure between the
second semiconductor layer and the fourth semiconductor layer, a
second portion of the conductive interconnect extends laterally
under at least a portion of the second fin structure between the
second semiconductor layer and the fourth semiconductor layer,
wherein the first and second portions of the conductive
interconnect are positioned adjacent the third semiconductor
layer.
26. The device of claim 25, wherein a material of the fourth
semiconductor layer differs from materials of the second
semiconductor layer and the third semiconductor layer.
27. The device of claim 21, further comprising an isolation
structure positioned on an upper surface of the conductive
interconnect.
28. The device of claim 21, wherein the first semiconductor layer
comprises silicon.
29. (canceled)
Description
BACKGROUND
1. Field of the Disclosure
[0001] The present disclosure generally relates to the fabrication
of semiconductor devices, and, more particularly, to various
embodiments of a method of forming a buried local interconnect and
the resulting devices.
2. Description of the Related Art
[0002] In general, memory devices are the means by which electronic
information is stored. There are many types of memory devices,
e.g., SRAMs (Static Random Access Memory), DRAMs (Dynamic Random
Access Memory), ROMs (Read Only Memory), etc., each of which has
its own advantages and disadvantages relative to other types of
memory devices. For example, SRAMs are typically employed in
applications where higher speed and/or reduced power consumption is
important, e.g., cache memory of a microprocessor, mobile phones
and other mobile consumer products, etc. Millions of such memory
devices are typically included in even very basic electronic
consumer products. Irrespective of the type of memory device, there
is a constant drive in the industry to increase the performance and
durability of such memory devices. In typical operations, an
electrical charge (HIGH) is stored in the memory device to
represent a digital "1", while the absence of such an electrical
charge or a relatively low charge (LOW) stored in the device
indicates a digital "0". Read/write circuitry is used to access the
memory device to store digital information on such a memory device
and to determine whether or not a charge is presently stored in the
memory device. These read/write cycles typically occur millions of
times for a single memory device over its effective lifetime.
[0003] In manufacturing memory devices, such as an SRAM cell,
various interconnect structures are formed to connect the elements
of the cell. For example, a conductive contact structure is formed
to cross-couple (or conductively couple) a shared drain region on a
first inverter with a gate structure of the second inverter, and to
cross-couple a shared drain region on the second inverter with a
gate structure of the first inverter. Other interconnections are
required to connect power supply voltages (e.g., VDD and ground) to
the elements of the cell. The area of the semiconductor device
needed for routing the interconnect cross-coupling structure limits
the scaling of the footprint of the device.
[0004] The present disclosure is directed to a method of forming a
buried local interconnect in a source/drain region and the
resulting devices.
SUMMARY
[0005] The following presents a simplified summary of illustrative
embodiments of the invention in order to provide a basic
understanding of some aspects of the illustrative embodiments of
the invention. This summary is not an exhaustive overview of the
illustrative embodiments of the invention specifically discussed
herein. It is not intended to identify key or critical elements of
the invention or to delineate the scope of the invention. Its sole
purpose is to present some concepts in a simplified form as a
prelude to the more detailed description that is discussed
later.
[0006] Generally, the present disclosure is directed to various
embodiments of a method of forming a buried local interconnect in a
source/drain region and the resulting devices. One illustrative
method includes, among other things, forming a first sacrificial
layer embedded between a first semiconductor layer and a second
semiconductor layer, forming a plurality of fin structures above
the second semiconductor layer, forming a mask layer having an
opening positioned between an adjacent pair of the fin structures,
removing a portion of the second semiconductor layer exposed by the
opening to expose the first sacrificial layer and define a first
cavity in the second semiconductor layer, removing portions of the
first sacrificial layer positioned between the first semiconductor
layer and the second semiconductor layer to form lateral cavity
extensions of the first cavity, forming a first liner layer in the
first cavity, and forming a conductive interconnect in the first
cavity over the first liner layer.
[0007] An illustrative device includes, among other things, a first
fin structure and a second fin structure positioned above a first
semiconductor layer, and a conductive interconnect positioned in
the semiconductor layer, wherein at least a first portion of the
conductive interconnect extends laterally under at least a portion
of the first fin structure and a second portion of the conductive
interconnect extends laterally under at least a portion of the
second fin structure.
[0008] Another illustrative devices includes, among other things, a
first fin structure and a second fin structure positioned above a
first semiconductor layer, wherein the first fin structure
comprises a first source/drain region, a conductive interconnect
positioned in the semiconductor layer and having a T-shaped
vertical cross-section, and a first contact contacting the first
source/drain region and the conductive interconnect.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The disclosure may be understood by reference to the
following description taken in conjunction with the accompanying
drawings, in which like reference numerals identify like elements,
and in which:
[0010] FIGS. 1A-1L are various views that depict methods for
forming buried local interconnects and the resulting devices;
and
[0011] FIGS. 2A-2I are various views that depict methods for
forming buried local interconnects and the resulting devices.
[0012] While the subject matter disclosed herein is susceptible to
various modifications and alternative forms, specific embodiments
thereof have been shown by way of example in the drawings and are
herein described in detail. It should be understood, however, that
the description herein of specific and illustrative embodiments is
not intended to limit the invention to the particular forms
disclosed, but on the contrary, the intention is to cover all
modifications, equivalents, and alternatives falling within the
spirit and scope of the invention as defined by the appended
claims.
DETAILED DESCRIPTION
[0013] Various illustrative embodiments of the invention are
described below. In the interest of clarity, not all features of an
actual implementation are described in this specification. It will
of course be appreciated that in the development of any such actual
embodiment, numerous implementation-specific decisions must be made
to achieve the developers' specific goals, such as compliance with
system-related and business-related constraints, which will vary
from one implementation to another. Moreover, it will be
appreciated that such a development effort might be complex and
time-consuming, but would nevertheless be a routine undertaking for
those of ordinary skill in the art having the benefit of this
disclosure.
[0014] The present subject matter will now be described with
reference to the attached figures. Various structures, systems and
devices are schematically depicted in the drawings for purposes of
explanation only and so as to not obscure the present disclosure
with details that are well known to those skilled in the art.
Nevertheless, the attached drawings are included to describe and
explain illustrative examples of the present disclosure. The words
and phrases used herein should be understood and interpreted to
have a meaning consistent with the understanding of those words and
phrases by those skilled in the relevant art. No special definition
of a term or phrase, i.e., a definition that is different from the
ordinary and customary meaning as understood by those skilled in
the art, is intended to be implied by consistent usage of the term
or phrase herein. To the extent that a term or phrase is intended
to have a special meaning, i.e., a meaning other than that
understood by skilled artisans, such a special definition will be
expressly set forth in the specification in a definitional manner
that directly and unequivocally provides the special definition for
the term or phrase. The various layers of material described below
may be formed by any of a variety of different known techniques,
e.g., a chemical vapor deposition (CVD) process, an atomic layer
deposition (ALD) process, a thermal growth process, epitaxial
growth processes, spin-coating techniques, etc. Moreover, as used
herein and in the attached claims, the word "adjacent" is to be
given a broad interpretation and should be interpreted to cover
situations where one feature actually contacts another feature or
is in close proximity to that other feature.
[0015] FIGS. 1A-1L are various views that depict methods for
forming buried local interconnects and the resulting integrated
circuit product 100. In some embodiments, the product 100 includes
vertically stacked nano-sheet devices. The product 100 is be formed
in and above a semiconductor substrate 105. The substrate 105 may
have a variety of configurations, such as the depicted bulk
configuration. A semiconductor-on-insulator (SOI) configuration
that includes a bulk semiconductor layer, a buried insulation layer
positioned on the bulk substrate 105 and one or more semiconductor
material layers positioned on the buried insulation layer may also
be used. The substrate 105 may be made of silicon or it may be made
of materials other than silicon, e.g., silicon-germanium, a III-V
compound semiconductor material, etc. Thus, the terms "substrate"
or "semiconductor substrate" should be understood to cover all
semiconducting materials and all forms of such materials.
[0016] In some embodiments, the product 100 is formed as part of a
high speed logic circuit. The IC product 100 includes a sacrificial
layer 110 positioned above the substrate 105 and a semiconductor
material layer 115 positioned above the sacrificial layer 110. The
sacrificial layer 110 is thus buried between the substrate 105 and
the semiconductor material layer 115. In some embodiments, the
semiconductor layer 115 is the same material as the substrate 105
(e.g., silicon), so the sacrificial layer 110 can be seen as being
buried in the substrate 105.
[0017] A nano-sheet stack 120 is formed above the semiconductor
layer 115. The nano-sheet stack 120 includes a bottom sacrificial
layer 125 and interleaved intermediate sacrificial layers 130 and
channel semiconductor layers 135. A hard mask layer 140 is formed
above the nano-sheet stack 120. In some embodiments, the channel
semiconductor layers 135 include substantially pure silicon. In
some embodiments, the intermediate sacrificial layers 130 include
silicon-germanium (Si.sub.xGe.sub.(1-x) where x ranges from 0.65 to
0.85), and the bottom sacrificial layer 125 includes
silicon-germanium (Si.sub.yGe.sub.(1-y) where y ranges from 0.25 to
0.5). The thicknesses of the layers 110, 115, 125, 130, 135 may
vary depending upon the particular application and they need not
have the same thicknesses. The different levels of Ge in the layers
125, 130, 135 provide etch selectivity so that certain layers may
be removed selectively.
[0018] The drawings include a simplistic plan view of the product
100 indicating where various cross-sectional views "X1-X1" and
"X2-X2" are taken. However, no attempt will be made to show the
various steps depicted in the cross-sectional views in the drawings
in the plan view of the product 100.
[0019] FIG. 1B illustrates the product 100 after the hard mask
layer 140 was patterned and used as an etch template to define
nano-sheet fins 145A, 145B, 145C, 145D, each having a narrow width
compared to its axial length. As seen in the plan view, gate
structures 150A, 150B, 150C, 150D were formed above the nano-sheet
fins 145A, 145B, 145C, 145D. In some embodiments, the nano-sheet
fins 145A, 145B, 145C, 145D and the gate structures 150A, 150B,
150C, 150D define a static random access memory (SRAM) cell.
Although the illustrated example depicts nano-sheet fins 145A,
145B, 145C, 145D, the techniques described herein may also be
applied to semiconductor fins in some embodiments.
[0020] FIG. 1C illustrates the product 100 after a liner layer 155
(e.g., silicon nitride) was formed above the nano-sheet fins 145A,
145B, 145C, 145D.
[0021] FIG. 1D illustrates the product 100 after a patterned etch
mask 160, e.g., a patterned organic patterning layer (OPL) or
photoresist, was formed on the product 100 by performing
traditional manufacturing techniques. The patterned etch mask 160
includes an opening 160A located between the nano-sheet fins 145B,
145C. As described more fully below, the opening 160A is positioned
at a location where it is desired to form a buried interconnect,
such as a buried power rail.
[0022] FIG. 1E illustrates the product 100 after one or more etch
processes were performed using the patterned etch mask 160 to open
the liner layer 155 and remove portions of the semiconductor layer
115 and the sacrificial layer 110 to define a cavity 160B in the
semiconductor layer 115 and the sacrificial layer 110. In some
embodiments, a portion of the substrate 105 is also removed, such
that the cavity 160B extends into the substrate 105.
[0023] FIG. 1F illustrates the product 100 after a selective etch
process was performed to remove lateral portions of the sacrificial
layer 110 to extend the cavity 160B laterally in a region
positioned between the semiconductor layer 115 and the substrate
105 to define lateral cavity extensions 160C.
[0024] FIG. 1G illustrates the product 100 after a deposition
process (e.g., plasma-enhanced atomic layer deposition (PEALD)) was
performed to form a liner layer 170 (e.g., silicon nitride) in the
cavities 160B, 160C.
[0025] FIG. 1H illustrates the product 100 after a chamfering
process was performed to remove upper portions of the liner layer
170 positioned above the patterned etch mask 160 and on sidewalls
of the nano-sheet fins 145B, 145C, and the patterned etch mask 160
was removed. During a chamfering process, a sacrificial material is
provided to partially fill the cavities such that it exposes
portions of the liner layer 170 disposed on sidewalls of the
nano-sheet fins 145B, 145C. An etch process is performed to remove
these exposed portions of the liner layer 170, and the sacrificial
material is removed. The remaining portion of the liner layer 170
in cavities 160B, 160C lines the bottom portion of the gate cavity,
thereby decreasing the aspect ratio of the upper portion for
subsequent material depositions within the gate cavities.
[0026] FIG. 1I illustrates the product 100 after several processes
were performed to form a conductive interconnect 175 in the
cavities 160B, 160C. A deposition process was performed to form a
conductive material (e.g., tungsten) in the cavities 160B, 160C and
above the nano-sheet fins 145A, 145B, 145C, 145D. A recess etch
process was performed to remove portions of the conductive material
positioned outside the cavities 160B, 160C. An upper surface 175U
of the conductive interconnect 175 is positioned below an upper
surface 115U of the semiconductor layer 115. The conductive
interconnect 175 includes a vertical portion 175V positioned in the
cavity 160B and lateral portions 175L extending laterally between
the semiconductor layer 115 and the substrate 105 in the cavities
160C. The conductive interconnect has a T-shaped vertical
cross-section. The portions of the conductive interconnect 175
positioned between the substrate 105 and the semiconductor layer
115 increase the cross-sectional area of the conductive
interconnect, resulting in an increased volume of conductive
material along the axial length of the conductive interconnect 175.
This increased volume reduces the resistance of the conductive
interconnect 175 and increases its current-carrying capacity.
[0027] FIG. 1J illustrates the product 100 after several processes
were performed to form an isolation structure 180 (e.g., silicon
dioxide) in the cavity 160B and between the nano-sheet fins 145A,
145B, 145C, 145D. The hard mask layer 140 was removed. The
isolation structure 180 was formed by depositing a dielectric
material in the cavity 160B and above the nano-sheet fins 145A,
145B, 145C, 145D. A recess etch process was performed to remove
portions of the dielectric material and the liner layer 155 to
expose the nano-sheet fins 145A, 145B, 145C, 145D.
[0028] FIG. 1K illustrates the product 100 in view X2-X2 through
source/drain regions of the nano-sheet fins 145A, 145B, 145C, 145D.
Several processes were performed to complete fabrication of the
product 100. The bottom sacrificial layer 125 was selectively
removed and replaced with a dielectric material 185 (e.g., silicon
nitride). Processes were performed to recess the portions of the
nano-sheet fins 145A, 145B, 145C, 145D not covered by the gate
structures 150A-150D and form N-type source drain regions 190N and
P-type source/drain regions 190P. The gate structures 150A-150D
were replaced with replacement gate materials, such as a high-k
gate dielectric layer and a metal gate electrode. For example, the
material of the gate structures 150A-150D was removed to define
gate cavities, portions of the intermediate sacrificial layers 130
in the gate cavities were removed, and the replacement gate
structures were formed in the gate cavities and around the channel
semiconductor layers 135. A dielectric layer 195 was formed above
the nano-sheet fins 145A, 145B, 145C, 145D and the gate structures
150A-150D, and contacts 197A, 197B, were formed in the dielectric
layer 195. The contacts 197A contact the N-type source/drain
regions 190N. The contact 197B contacts the P-type source/drain
regions 190P and the conductive interconnect 175. In some
embodiments, the contact 197B is recessed, as illustrated in FIG.
1K.
[0029] FIG. 1L illustrates an alternative embodiment of the product
100, according to some embodiments where the contact 197B is not
recessed. The contacts 197A, 197B in this embodiment have coplanar
upper surfaces.
[0030] FIGS. 2A-2I are various views that depict methods for
forming buried local interconnects and the resulting integrated
circuit product 200. In some embodiments, the product 200 includes
vertically stacked nano-sheet devices. The product 200 is be formed
in and above a semiconductor substrate 105. The product 200 is
similar to the product 100 of FIG. 1B with the exception that the
sacrificial layer 110 and the semiconductor layer 115 are omitted.
Although the illustrated example depicts nano-sheet fins 145A,
145B, 145C, 145D, the techniques described herein may also be
applied to semiconductor fins in some embodiments.
[0031] The drawings include a simplistic plan view of the product
200 indicating where various cross-sectional views "X1-X1" and
"X2-X2" are taken. However, no attempt will be made to show the
various steps depicted in the cross-sectional views in the drawings
in the plan view of the product 200.
[0032] FIG. 2B illustrates the product 200 after a dielectric layer
205 was formed between the nano-sheet fins 145A, 145B, 145C, 145D,
and a planarization process was performed to expose the hard mask
layer 140.
[0033] FIG. 2C illustrates the product 200 after a patterned etch
mask 210, e.g., a patterned organic patterning layer (OPL) or
photoresist, was formed on the product 200 by performing
traditional manufacturing techniques. The patterned etch mask 210
includes an opening 210A located between the nano-sheet fins 145B,
145C. As described more fully below, the opening 205A is positioned
at a location where it is desired to form a buried interconnect,
such as a buried power rail.
[0034] FIG. 2D illustrates the product 200 after one or more etch
processes were performed using the patterned etch mask 210 to
remove a portion of the dielectric layer 205 exposed by the opening
210A to define a trench 210B in the dielectric layer 205. The
trench 210B exposes sidewall surfaces of the nano-sheet fins 145B,
145C and a portion of the sidewall surface of the substrate
105.
[0035] FIG. 2E illustrates the product 200 after the patterned etch
mask 210 was removed and a spacer 215 was formed in the trench
210B. In some embodiments, the spacer 215 was formed by depositing
a conformal layer of spacer material (e.g., SiC or SiOC) above the
nano-sheet fins 145A-145D, above the dielectric layer 205, and in
the trench 210B and performing an isotropic etch process to remove
horizontal portions of the conformal layer of spacer material. Note
that the spacer 215 covers exposed portions of the sacrificial
layer 125 and a portion of the exposed sidewall of the lowermost
sacrificial layer 130.
[0036] FIG. 2F illustrates the product 200 after several processes
were performed to form a conductive interconnect 220 in the trench
210B. A deposition process was performed to form a conductive
material (e.g., tungsten) in the trench 210B and above the
dielectric layer 205. A recess etch process was performed to remove
portions of the conductive material positioned outside the trench
210B.
[0037] FIG. 2G illustrates the product 200 after several processes
were performed to form an isolation structure 225 (e.g., silicon
dioxide) in the trench 210B and between the nano-sheet fins 145A,
145B, 145C, 145D. The isolation structure 225 was formed by
depositing a dielectric material in the trench 210B and above the
nano-sheet fins 145A, 145B, 145C, 145D. A planarization process was
performed to expose the hard mask layer 140. A recess etch process
was performed to remove portions of the dielectric material 205 to
expose the nano-sheet fins 145A, 145B, 145C, 145D. The hard mask
layer 140 was removed.
[0038] FIG. 2H illustrates the product 200 in view X2-X2 through
source/drain regions of the nano-sheet fins 145A, 145B, 145C, 145D.
Several processes were performed to complete fabrication of the
product 200. The bottom sacrificial layer 125 was selectively
removed and replaced with a dielectric material 185 (e.g., silicon
nitride). Processes were performed to recess the portions of the
nano-sheet fins 145A, 145B, 145C, 145D not covered by the gate
structures 150A-150D and form N-type source/drain regions 190N and
P-type source/drain regions 190P. The gate structures 150A-150D
were replaced with replacement gate materials, such as a high-k
gate dielectric layer and a metal gate electrode. For example, the
material of the gate structures 150A-150D was removed to define
gate cavities, portions of the intermediate sacrificial layers 130
in the gate cavities were removed, and the replacement gate
structures were formed in the gate cavities and around the channel
semiconductor layers 135. A dielectric layer 195 was formed above
the nano-sheet fins 145A, 145B, 145C, 145D and the gate structures
150A-150D, and contacts 197A, 197B, were formed in the dielectric
layer 195. The contacts 197A contact the N-type source/drain
regions 190N. The contact 197B contacts the P-type source/drain
regions 190P and the conductive interconnect 220. In some
embodiments, the contact 197B is recessed, as illustrated in FIG.
2H.
[0039] FIG. 2I illustrates the product 200, where an additional
contact 197C was formed to contact the contact 197B, in accordance
with some embodiments.
[0040] The particular embodiments disclosed above are illustrative
only, as the invention may be modified and practiced in different
but equivalent manners apparent to those skilled in the art having
the benefit of the teachings herein. For example, the process steps
set forth above may be performed in a different order. Furthermore,
no limitations are intended to the details of construction or
design herein shown, other than as described in the claims below.
It is therefore evident that the particular embodiments disclosed
above may be altered or modified and all such variations are
considered within the scope and spirit of the invention. Note that
the use of terms, such as "first," "second," "third" or "fourth" to
describe various processes or structures in this specification and
in the attached claims is only used as a shorthand reference to
such steps/structures and does not necessarily imply that such
steps/structures are performed/formed in that ordered sequence. Of
course, depending upon the exact claim language, an ordered
sequence of such processes may or may not be required. Accordingly,
the protection sought herein is as set forth in the claims
below.
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