U.S. patent application number 15/993691 was filed with the patent office on 2019-12-05 for methods of forming metal layer structures in semiconductor devices.
The applicant listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Hsin-Ping Chen, Cheng-Chi Chuang, Ethan Hsiao, Chien Wen Lai, Chih-Ming Lai, Yi-Hsiung Lin, Ru-Gun Liu.
Application Number | 20190371655 15/993691 |
Document ID | / |
Family ID | 68694208 |
Filed Date | 2019-12-05 |
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United States Patent
Application |
20190371655 |
Kind Code |
A1 |
Hsiao; Ethan ; et
al. |
December 5, 2019 |
Methods of Forming Metal Layer Structures in Semiconductor
Devices
Abstract
A method includes providing a substrate comprising a material
layer and a hard mask layer; patterning the hard mask layer to form
hard mask lines; forming a spacer layer over the substrate,
including over the hard mask lines, resulting in trenches defined
by the spacer layer, wherein the trenches track the hard mask
lines; forming a antireflective layer over the spacer layer,
including over the trenches; forming an L-shaped opening in the
antireflective layer, thereby exposing at least two of the
trenches; filling the L-shaped opening with a fill material;
etching the spacer layer to expose the hard mask lines; removing
the hard mask lines; after removing the hard mask lines,
transferring a pattern of the spacer layer and the fill material
onto the material layer, resulting in second trenches tracking the
pattern; and filling the second trenches with a conductive
material.
Inventors: |
Hsiao; Ethan; (Hsinchu,
TW) ; Lai; Chien Wen; (Hsinchu City, TW) ;
Lai; Chih-Ming; (Hsinchu City, TW) ; Lin;
Yi-Hsiung; (Hsinchu County, TW) ; Chuang;
Cheng-Chi; (New Taipei City, TW) ; Chen;
Hsin-Ping; (Hsinchu, TW) ; Liu; Ru-Gun;
(Hsinchu County, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsinchu |
|
TW |
|
|
Family ID: |
68694208 |
Appl. No.: |
15/993691 |
Filed: |
May 31, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/76877 20130101;
H01L 21/823821 20130101; H01L 21/76816 20130101; H01L 21/0332
20130101; H01L 21/31111 20130101; H01L 21/0338 20130101; H01L
21/823431 20130101; H01L 21/0337 20130101; H01L 21/823475 20130101;
H01L 21/0276 20130101; H01L 21/31144 20130101; H01L 21/31053
20130101 |
International
Class: |
H01L 21/768 20060101
H01L021/768; H01L 21/033 20060101 H01L021/033; H01L 21/027 20060101
H01L021/027; H01L 21/311 20060101 H01L021/311; H01L 21/8234
20060101 H01L021/8234 |
Claims
1. A method of forming a semiconductor device, comprising:
providing a workpiece having a substrate, a material layer over the
substrate, and a hard mask layer over the material layer;
patterning the hard mask layer to form a first plurality of hard
mask lines; forming a spacer material layer over the first
plurality of hard mask lines, resulting in a second plurality of
trenches defined by the spacer material layer, wherein the second
plurality of trenches tracks the first plurality of hard mask
lines; forming an antireflective layer over the spacer material
layer, including over the second plurality of trenches; forming an
L-shaped opening in the antireflective layer, thereby exposing at
least two of the second plurality of trenches; filling the L-shaped
opening with a fill material; etching the spacer material layer to
expose the first plurality of hard mask lines; removing the first
plurality of hard mask lines; after removing the first plurality of
hard mask lines, transferring a pattern of the spacer material
layer and the fill material onto the material layer, resulting in
trenches tracking the pattern; and filling the trenches with a
conductive material.
2. The method of claim 1, wherein the L-shaped opening includes a
first line portion and a second line portion, wherein the second
line portion extends from an end of the first line portion and is
perpendicular to the first line portion.
3. The method of claim 2, wherein a width of the first line portion
is greater than about a width of one of the second plurality of
trenches and less than about a pitch of the first plurality of hard
mask lines.
4. The method of claim 2, wherein the first line portion extends
parallel to and is over one of the second plurality of
trenches.
5. The method of claim 3, wherein the second line portion extends
across at least two of the second plurality of trenches.
6. The method of claim 1, wherein the forming of the L-shaped
opening in the antireflective layer comprises forming the L-shaped
opening over more than one of the second plurality of trenches.
7. The method of claim 1, wherein the removing of the first
plurality of hard mask lines includes removing a portion of the
first plurality of hard mask lines, thereby resulting in a leftover
hard mask segment, wherein the transferring the pattern of the
spacer material layer and the fill material onto the material layer
includes transferring a pattern of the leftover hard mask segment
on the material layer.
8. A method of forming a semiconductor device, comprising: forming
a first plurality of hard mask lines over a material layer on a
substrate, the first plurality of hard mask lines extending along a
first direction; forming a spacer material layer over the first
plurality of hard mask lines, resulting in a second plurality of
trenches extending along the first direction, each of the second
plurality of trenches having sidewalls formed of the spacer
material layer, wherein the second plurality of trenches tracks the
first plurality of hard mask lines; forming a antireflective layer
over the second plurality of trenches; forming a first line-shaped
opening in the antireflective layer; filling the first line-shaped
opening with a fill material, wherein the first line-shaped opening
extends along the first direction; etching the spacer material
layer to expose the first plurality of hard mask lines; removing
the first plurality of hard mask lines; after removing the first
plurality of hard mask lines, transferring a pattern of the spacer
material layer and the fill material onto the material layer,
resulting in trenches tracking the pattern; and filling the
trenches with a conductive material.
9. The method of claim 8, further comprising: forming a second
line-shaped opening in the antireflective layer, wherein the second
line-shaped opening extends from an end of the first line-shaped
opening and along a second direction perpendicular to the first
direction; and filling the second line-shaped opening with the fill
material.
10. The method of claim 8, wherein the first line-shaped opening
extends over one of the second plurality of trenches.
11. The method of claim 9, wherein the second line-shaped opening
extends across at least two of the second plurality of
trenches.
12. The method of claim 8, wherein a width of the first line-shaped
opening is greater than about a width of one of the second
plurality of trenches and less than about a pitch of the first
plurality of hard mask lines.
13. The method of claim 8, wherein the forming of the first
line-shaped opening in the antireflective layer comprises forming
the first line-shaped opening over one of the second plurality of
trenches.
14. The method of claim 8, wherein the removing of the first
plurality of hard mask lines includes removing a portion of the
first plurality of hard mask lines, thereby resulting in a leftover
hard mask segment, wherein the transferring the pattern of the
spacer material layer and the fill material onto the material layer
includes transferring a pattern of the leftover hard mask segment
on the material layer.
15. A method of forming a semiconductor device, comprising:
providing a workpiece having a substrate, a material layer over the
substrate, and a hard mask layer over the material layer;
patterning the hard mask layer, thereby forming a first plurality
of hard mask lines; forming a spacer material layer over the first
plurality of hard mask lines, resulting in a second plurality of
trenches that tracks the first plurality of hard mask lines;
forming an antireflective layer over the spacer material layer,
including over the second plurality of trenches; forming an
L-shaped opening in the antireflective layer, wherein the L-shaped
opening includes a first line portion and a second line portion
perpendicular to the first line portion, wherein the first line
portion extends parallel to and is over one of the second plurality
of trenches; filling the L-shaped opening with a fill material;
etching the spacer material layer to expose the first plurality of
hard mask lines; removing the first plurality of hard mask lines;
after removing the first plurality of hard mask lines, transferring
a pattern of the spacer material layer and the fill material onto
the material layer, resulting in trenches tracking the pattern; and
filling the trenches with a conductive material.
16. The method of claim 15, wherein the second line portion extends
from an end of the first line portion and is perpendicular to the
first line portion.
17. The method of claim 15, wherein the second line portion extends
across at least two of the second plurality of trenches.
18. The method of claim 15, wherein a width of the first line
portion is greater than about a width of one of the second
plurality of trenches and less than about a pitch of the first
plurality of hard mask lines.
19. The method of claim 15, wherein the removing of the first
plurality of hard mask lines includes removing a portion of the
first plurality of hard mask lines, thereby resulting in a leftover
hard mask segment, wherein the transferring the pattern of the
spacer material layer and the fill material onto the material layer
includes transferring a pattern of the leftover hard mask segment
on the material layer.
20. The method of claim 15, wherein, after the removing of the
first plurality of hard mask lines, the fill material comprises a
line-shaped portion that fills one of the second plurality of
trenches.
Description
BACKGROUND
[0001] The semiconductor integrated circuit (IC) industry has
experienced exponential growth. Technological advances in IC
materials and design have produced generations of ICs where each
generation has smaller and more complex circuits than the previous
generation. In the course of IC evolution, functional density
(i.e., the number of interconnected devices per chip area) has
generally increased while geometry size (i.e., the smallest
component (or line) that can be created using a fabrication
process) has decreased. This scaling down process generally
provides benefits by increasing production efficiency and lowering
associated costs. Such scaling down has also increased the
complexity of processing and manufacturing ICs.
[0002] Self-aligned double patterning or multiple patterning
techniques are used to define conductive lines. However, the
existing metal line forming techniques have tight process window
and can result in the formation of relatively short dummy
conductive lines that lead to increased parasitic capacitance.
Accordingly, improvements in these areas are desired.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] The present disclosure is best understood from the following
detailed description when read with the accompanying figures. It is
emphasized that, in accordance with the standard practice in the
industry, various features are not drawn to scale and are used for
illustration purposes only. In fact, the dimensions of the various
features may be arbitrarily increased or reduced for clarity of
discussion.
[0004] FIG. 1 is a flowchart illustrating a method for fabricating
conductive features on a substrate according to aspects of the
present disclosure.
[0005] FIGS. 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and 13 illustrate
perspective views of a substrate that undergoes operations of the
method in FIG. 1, according to aspects of the present
disclosure.
[0006] FIGS. 14 and 15 illustrate perspective views of a substrate
that undergoes operations of the method in FIG. 1, according to
another aspect of the present disclosure.
DETAILED DESCRIPTION
[0007] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the first and second
features, such that the first and second features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0008] Further, spatially relative terms, such as "beneath,"
"below," "lower," "above," "upper" and the like, may be used herein
for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly. Still further, when a
number or a range of numbers is described with "about,"
"approximate," and the like, the term is intended to encompass
numbers that are within a reasonable percentage (e.g., +/-10%) of
the number described as understood by a person having ordinary
skill in the art, unless otherwise specified. For example, the term
"about 5 nm" encompasses the dimension range from 4.5 nm to 5.5
nm.
[0009] Illustrated in FIG. 1 is a method 100 of fabricating
conductive features of a semiconductor device on a substrate. The
method 100 is merely an example, and is not intended to limit the
present disclosure beyond what is explicitly recited in the claims.
Additional operation can be provided before, during, and after the
method 100, and some operations can be replaced, eliminated, or
moved around for additional embodiments of the method. The method
100 is described below in conjunction with FIGS. 2-15, which are
perspective views of a substrate in various stages of a fabrication
process. In an embodiment, the conductive features may be a part of
an interconnect structure such as a multi-layer interconnect (MLI)
structures.
[0010] It is also understood that parts of the semiconductor device
of FIGS. 2-15 may be fabricated by complementary
metal-oxide-semiconductor (CMOS) technology process flow, and thus
some processes are only briefly described herein. Further, the
semiconductor device may include various other devices and
features, such as field effect transistors, bipolar junction
transistors, resistors, capacitors, diodes, fuses, etc., but is
simplified for a better understanding of the inventive concepts of
the present disclosure. Furthermore, the semiconductor device of
FIGS. 2-15 may be an intermediate device fabricated during
processing of an integrated circuit, or portion thereof, that may
comprise static random access memory (SRAM) and/or other logic
circuits, passive components such as resistors, capacitors, and
inductors, and active components such as P-channel field effect
transistors (PFET), N-channel FET (NFET), metal-oxide semiconductor
field effect transistors (MOSFET), complementary metal-oxide
semiconductor (CMOS) transistors, bipolar transistors, high voltage
transistors, high frequency transistors, other memory cells, and
combinations thereof.
[0011] It is also noted that the semiconductor device of FIGS. 2-15
may include multi-gate transistors or fin-type multi-gate
transistors referred to herein as FinFET devices. Such a device may
include a P-type FinFET device or an N-type FinFET device. The
FinFET device may be a dual-gate device or a tri-gate device, built
on a bulk substrate or a silicon-on-insulator (SOI) substrate. One
of ordinary skill in the art may recognize other embodiments of
semiconductor devices that may benefit from aspects of the present
disclosure. For example, some embodiments as described herein may
also be applied to gate-all-around (GAA) devices, Omega-gate
(.OMEGA.-gate) devices, Pi-gate (.PI.-gate) devices, nano-wire gate
devices, and nano-sheet gate devices. In other embodiments, a
planar device may be fabricated using one or more of the structures
or methods discussed herein.
[0012] The fins in FinFET semiconductor devices may be patterned by
any suitable method. For example, the fins may be patterned using
one or more photolithography processes, including double-patterning
or multi-patterning processes. Generally, double-patterning or
multi-patterning processes combine photolithography and
self-aligned processes, allowing patterns to be created that have,
for example, pitches smaller than what is otherwise obtainable
using a single, direct photolithography process. For example, in
one embodiment, a sacrificial layer is formed over a substrate and
patterned using a photolithography process. Spacers are formed
alongside the patterned sacrificial layer using a self-aligned
process. The sacrificial layer is then removed, and the remaining
spacers may then be used to pattern the fins.
[0013] The semiconductor device of FIGS. 2-15 includes a plurality
of passive and/or active components (e.g., transistors), which may
be interconnected. The components may be interconnected using an
interconnect structure formed according to the method 100. The
interconnect structure may provide a physical and/or electrical
connection between components and/or between a component and a pad
providing an external connection (e.g., to a package). An
interconnect structure such as an MLI structure includes a
plurality of conductive lines formed in various layers (e.g., metal
1, metal 2) with conductive vias interconnecting the lines. An
interconnect structure further includes one or more dielectric
material (for example, interlayer dielectric (ILD) layers) to
provide isolation between conductive features.
[0014] At operation 102, the method 100 (FIG. 1) receives a
workpiece 200 (or device 200) such as shown in FIG. 2. Referring to
FIG. 2, the device 200 includes a substrate 202. The substrate 202
may be a semiconductor wafer that includes a plurality of layers.
In an embodiment, the semiconductor wafer includes silicon.
Alternatively, the substrate 202 may include another elementary
semiconductor, such as germanium Ge; a compound semiconductor
including silicon carbide (SiC), gallium arsenic (GaAs), gallium
phosphide (GaP), indium phosphide (InP), indium arsenide (InAs),
and/or indium antimonide (InSb); an alloy semiconductor including
SiGe, GaAsP, AlInAs, AlGaAs, GalnAs, GaInP, and/or GaInAsP; or
combinations thereof. In yet another alternative, the substrate 202
includes a semiconductor on insulator (SOI). Alternatively, the
substrate 202 may include a non-semiconductor material such as a
glass substrate, fused quartz substrate, and/or other suitable
materials.
[0015] The substrate 202 may also include various features such as
doped regions, dielectric features, conductive features such as
multi-layer interconnects, and/or other suitable features (not
shown). In one embodiment, the substrate 202 includes features
forming various semiconductor devices such as, for example,
complementary metal-oxide-semiconductor field effect transistors
(CMOSFET), imaging sensors, capacitors, memory cells, diodes,
fin-type field-effect transistors (FINFETs), and/or other suitable
devices.
[0016] The device 200 includes a plurality of layers formed over
the substrate 202. As illustrated, the device 200 includes a base
layer 204, a dielectric layer 206, a first hard mask layer 208, an
etch stop layer (ESL) 210, and a second hard mask layer 212.
However, these layers are exemplary and not intended to be
limiting; one or more of the layers may be omitted, and additional
layers may be added. For example, one or more anti-reflective
coating layers or ESL layers may be inserted between two of the
layers illustrated in FIGS. 2-12. Example compositions for the
layers formed on the substrate 202 are provided below, however,
except as specifically defined by the claims hereto, these
compositions are merely examples and not intended to be
limiting.
[0017] In some embodiments, the base layer 204 includes a
dielectric material such as a low-k or an extreme low-k (ELK)
dielectric material. Exemplary ELK materials include dielectric
materials having a dielectric constant k less than approximately 2.
The base layer 204 may include dielectric materials such as,
tetraethylorthosilicate (TEOS) oxide, un-doped silicate glass, or
doped silicon oxide such as borophosphosilicate glass (BPSG), fused
silica glass (FSG), phosphosilicate glass (PSG), boron doped
silicon glass (BSG), and/or other suitable dielectric materials.
The layer may be deposited by a plasma enhanced chemical vapor
deposition (PECVD) process or other suitable deposition technique.
In some embodiments, the base layer 204 may be an interlayer
dielectric (ILD) layer or of a MLI structure. In some instances,
metallization layer may be formed within the base layer 204.
[0018] The dielectric layer 206 may include dielectric materials
such as, tetraethylorthosilicate (TEOS) oxide, un-doped silicate
glass, or doped silicon oxide such as borophosphosilicate glass
(BPSG), fused silica glass (FSG), phosphosilicate glass (PSG),
boron doped silicon glass (BSG), and/or other suitable dielectric
materials. In some embodiments, the first and second hard mask
layers 208 and 212 include a hard mask material, such as titanium
oxide (Ti.sub.xO.sub.y), tantalum oxide (Ta.sub.xO.sub.y), titanium
nitride (Ti.sub.xN.sub.y), silicon nitride (Si.sub.xN.sub.y), and
silicon oxide (Si.sub.xO.sub.y).
[0019] In some embodiments, the ESL layer 210 may be formed of a
dielectric material, such as silicon carbide (Si.sub.xC.sub.y),
silicon nitride (Si.sub.xN.sub.y), silicon oxynitride
(Si.sub.xO.sub.yN.sub.z), silicon oxycarbide
(Si.sub.xO.sub.yC.sub.z), or combination thereof. The X and Y in
the chemical formulae can be stoichiometric or can depend on the
amount of precursors used to form the ESL layer 210. In some
embodiments, the ESL layer 210 may include multiple etch stop
layers formed of aforementioned dielectric materials. Generally, as
compared to the hard mask layer 212, the ESL layer 210 may
experience slower etch rate in an etching process. That way, when
the hard mask layer 212 is etched, the etching process can
substantially come to a stop within or near a boundary of the ESL
layer 210. The layers 204, 206, 208, 210, and/or 212 may be formed
by suitable processes such as, for example, chemical vapor
deposition (CVD) including PECVD, low-pressure CVD (LPCVD), or high
density plasma CVD (HDP-CVD) process; spin-on coating; sputtering;
physical vapor deposition (PVD); atomic layer deposition (ALD);
and/or other suitable processes.
[0020] With reference now to FIGS. 3, 4, and 5, the method 100 then
proceeds to block 104 to pattern the second hard mask layer 212 to
form a first plurality of hard mask lines 2120. As shown in FIG. 3,
in some implementations, a plurality of openings 214 may be
optionally formed on the second hard mask layer 212. Each of the
plurality of openings 214 extends along a direction that is
perpendicular to the direction of the to-be-formed conductive
features. In the embodiment represented in FIG. 3, the plurality of
openings 214 extend along the Y direction. One-directional openings
such as opening 214 can be formed with good precision. As will be
described in more details in FIGS. 5, 6, 9, 10, 11, and 12, the
plurality of openings 214 may result in formation of hard mask
features that separate metal lines. For that reason, the formation
of the plurality of openings 214 may be referred to as a first cut
metal etch.
[0021] Referring now to FIG. 4, a bottom antireflective coating
(BARC) 216 may be formed over the second hard mask layer 212. In
some implementations, the BARC layer 216 may be formed of silicon
oxynitride (SiON), a polymer, other suitable materials, or a
combination thereof, using CVD, spin-on processes, or other
suitable processes. Photoresist lines 218 are formed over the BARC
layer 216. Each of the photoresist lines 218 extends parallel along
the X direction. The photoresist lines 218 may be formed using
suitable processes. For example, a photoresist layer 218 may be
formed on the BARC layer 216 by spin-on coating. The photoresist
layer 218 may be then be exposed and developed by suitable
lithography chemistry to turn into photoresist lines 218. After the
photoresist lines 218 are developed, they may be subject to
post-bake processes. Then the BARC layer 216 and the second hard
mask layer 212 are etched using the plurality of photoresist lines
218 as the etch mask. As shown in FIG. 5, because the ESL 210 below
the second hard mask layer 212 experiences a slower etch rate than
the second hard mask layer 212, the second hard mask layer 212 not
under the plurality of photoresist lines 218 is removed, leaving a
first plurality of hard mask lines 2120 over the ESL 210. The
openings 214 in FIG. 3 leave behind hard mask line cuts 2140 in
FIG. 5, dividing the hard mask line 2123 into segments.
[0022] Referring now to FIG. 6, the method 100 then proceeds to
block 106 where a spacer material layer 220 is formed over the
first plurality of hard mask lines 2120 and the ESL 210. The spacer
material layer 220 is conformally formed and may also be referred
to as a conformal layer 220. As shown in FIG. 6, the spacer
material layer 220 is formed not only over top surfaces of the hard
mask lines 2120 but also over sidewalls of the hard mask lines
2120. As will be illustrated below in conjunction with FIG. 11, the
spacer material layer 220 over the sidewalls of the hard mask lines
2120 will result in spacer layers 2200 left behind after the hard
mask lines 2120 is removed from the device 200. The spacer material
layer 220 may include a dielectric material, such as silicon
dioxide (Si.sub.xO.sub.y), silicon nitride (Si.sub.xN.sub.y),
silicon oxynitride (Si.sub.xO.sub.yN.sub.z), and/or other suitable
dielectric materials. The X and Y in the chemical formulae can be
stoichiometric or can depend on the amount of precursors used to
form the spacer material layer 220. It is noted that because the
spacer material layer 220 is conformal in nature, it also fills in
the hard mask line cuts 2140 (FIG. 5). With respect to the hard
mask line 2123 where the hard mask line cuts 2140 reside, the
portions of the spacer material layer 220 filled in the hard mask
line cuts 2140 create spacers that divide the hard mask line 2123
into segments. As shown in FIG. 6, the spacer material layer 220
formed over the hard mask lines 2120 include spacer layer trenches
2210, 2220 and 2230.
[0023] Reference is now made to FIG. 7. The method 100 of FIG. 1
proceeds to block 108 where a bottom antireflective coating (BARC)
layer 222 is formed over the spacer material layer 220. In some
implementations, the BARC layer 222 may be formed of silicon
oxynitride (SiON), a polymer, other suitable materials, or a
combination thereof, using CVD, spin-on processes, or other
suitable processes. The BARC layer 222 fills in the spacer layer
trenches 2210, 2220 and 2230. Still referring to FIG. 7, the method
100 then proceeds to block 110 where an L-shaped opening (or
L-shaped pattern) 224 is formed by removing the BARC layer 222
within the L-shaped opening 224. To pattern the BARC layer 222 to
form the L-shaped opening 224, a photoresist layer may be deposited
over the BARC layer 222. The photoresist layer can be exposed and
developed to have an L-shaped opening corresponding to the L-shaped
opening 224 and the BARC layer 222 is etched using the photoresist
layer as an etch mask. In some implementations, the L-shaped
opening 224 resembles an axe and may be referred to as the
axe-shaped opening 224. As will be described in more details in
FIGS. 8, 9, 10, 11, 12, and 13, the L-shaped openings 224 may
result in formation of fill material features that separate metal
lines. For that reason, the formation of the L-shaped openings 224
may be referred to as a second cut metal etch.
[0024] In embodiments represented in FIG. 7, the L-shaped opening
224 is over the spacer layer trenches 2210 and 2220 and includes a
first line-shaped portion 2241 (or first line portion 2241) and a
second line-shaped portion 2242 (or second line portion 2242). In
some embodiments, the first line-shaped portion 2241 is
perpendicular to the second line-shaped portion 2242. In some
implementations, the second line-shaped portion 2242 extends from
an end of the first line-shaped portion 2241. In some instances,
the first line-shaped portion 2241 extends parallel to and over the
spacer layer trench 2220. In some implementations, a width W of the
first line-shaped portion 2241 can have a minimum equal to a width
of the spacer layer trench 2220 in order to full expose the spacer
layer trench 2220. The width W of the first line-shaped portion
2241 can have a maximum equal to a pitch of the hard mask lines
2120 such that the first line-shaped opening does not expose an
adjacent spacer layer trench, such as the spacer layer trench 2210.
That is, edges of the first line-shaped portion 2241 that define
the width W can be over the spacer material layers 220. The large
range of the width W widens the process window of the method 100.
In some instances, the second line-shaped portion 2242 spans over
the hard mask line 2121, the hard mask line 2122, the spacer layer
trenches 2210 and 2220. The first line-shaped portion 2241 includes
a length P. In some instances, the device 200 includes a plurality
of standard cells. Each of the standard cells includes gates of
semiconductor devices that are disposed at a pitch. The pitch is
substantially identical to the length P. In some embodiments, the
L-shaped opening 224 may be formed using one mask that includes an
L-shaped pattern that resembles the L-shaped opening 224. In some
other embodiments, the L-shaped opening 224 may be formed using two
separate masks: a first mask that includes a line pattern that
resembles the first line-shaped portion 2241 and a second mask that
includes a line pattern that resembles the second line-shaped
portion 2242. While only one L-shaped opening 224 is shown in FIG.
7, multiple L-shaped openings that are substantially similar to the
L-shaped opening 224 may be advantageously formed on the BARC layer
222.
[0025] While L-shaped openings are described in the present
disclosure, openings of other shapes that include two line-shaped
portions coupled to one another are envisioned by the present
disclosure. For example, the first line-shaped portion 2241 can end
in and connect to a middle portion of the second line-shaped
portion 2242, thus making the L-shaped opening appear like a
T-shaped opening. As used herein, the middle portion refers to any
portion that is between the two terminal ends of a line-shaped
portion.
[0026] In an alternative implementation, the method 100 can include
additional operations between operations in block 108 and
operations in block 110. These additional operations are performed
by a computer system that can access a layout of the device 200.
Based on the layout of the device 200, such computer system can
determine locations of metal line cuts. Taking the device 200 in
FIG. 7 as an example, the metal line cuts include a first metal
line cut located at an end 2243 of the first line-shaped portion
2241 and a second metal line cut that coincides with the second
line-shaped portion 2242. It is noted that in this example, the
first metal line cut 2243 will result in a cut of a metal line to
be formed under the spacer layer trench 2220 and the second metal
line cut 2242 will result in a cut of two metal lines to be formed
under both the spacer layer trenches 2210 and 2220. The computer
system can then determine if a metal line segment between the first
metal line cut 2243 and the second metal line cut 2242 (i.e. the
metal line under the first line-shaped portion 2241) is functional.
If the metal line segment is not functional (i.e. a dummy line),
the method 100 will proceed to block 110 where the L-shaped opening
will eventually result in the removal or non-formation of the dummy
line under the first line-shaped portion 2241. If the computer
system determines that the metal line segment between the first
metal line cut 2243 and the second metal line cut 2242 is
functional based on the layout of the device 200 and should not be
removed, the method 100 does not apply to this specific location
and only the portions of the BARC layer 222 that correspond to the
first metal line cut 2243 and the second metal line cut 2242 will
be removed.
[0027] Referring to FIG. 8, the method 100 then proceeds to block
112 where the L-shaped opening 224 is filled with a fill material
2240. As illustrated in FIG. 8, the fill material 2240 not only
fills in the portions of the spacer layer trenches 2210 and 2220
that are exposed in the L-shaped opening 224 but also cover the
spacer material layer 220 exposed in the L-shaped opening 224. In
some embodiments, the fill material 2240 may be a
silicon-containing antireflective coating (Si-ARC). For example,
the Si-ARC can include inorganic ARCs such as SiON, silicon
containing organic ARCs such as polysilanes, and/or other suitable
compositions. In an embodiment, the silicon content is between
approximately 30 and 40 atomic weight percent. The spacer layer
trenches 2210 and 2220 may be filled using a spin-coating or other
suitable deposition process. The fill material 2240 may also be
referred to as reverse material 2240.
[0028] Referring to FIGS. 9 and 10, the method 100 proceeds to
block 114 where the BARC layer 222 is removed. In an embodiment,
after the fill material 2240 fills the L-shaped opening 224, the
device 200 is planarized by, for example, the use of a chemical
mechanical polishing (CMP) process. Any excess fill material 2240
that is not in the spacer layer trenches 2210 and 2220 can be
removed in the planarization process, resulting in a planar
surface. The resultant structure is shown in FIG. 9. In FIG. 9, the
BARC layer 222 is also planarized such that a top surface of the
BARC layer 222 is flush with a top surface of the plurality of
spacers 2200. Referring now to FIG. 10, the planarized BARC layer
222 is then selectively etched away without substantially etching
the fill material feature 2245 and 2247. In some embodiments, to
achieve the etching selectivity between the BARC layer 222 and the
fill material 2240, the BARC layer 222 and the fill material 2240
have different compositions. For example, the BARC layer 222 can be
a polymer and the fill material 2240 can be inorganic ARC such as
SiON.
[0029] Referring now to FIG. 11, the method 100 proceeds to block
116 where the spacer material layer 220 are etched back to expose
the first plurality of hard mask lines 2120. As illustrated in FIG.
11, after the portion of the spacer material layer 220 over the top
surfaces of the hard mask lines 2120 is removed, the hard mask
lines 2120 are exposed and a plurality of spacers 2200 over the
sidewalls of the hard mask lines 2120 are formed. The spacers 2200
may be said to track the hard mask lines 2120. In some embodiments,
the portion of the spacer material layer 220 on the ESL layer 210
is also removed at block 116. Also shown in FIG. 11, the hard mask
line 2123 is separated by spacer material features 226 into
segments. The spacers 2200 that track the hard mask lines 2120 also
define spacer layer trenches 2210, 2220 and 2230. As will be made
apparent by the description below, the transferred patterns of the
spacer layer trenches 2210, 2220 and 2230 will be filled with
conductive materials to form conductive lines.
[0030] Reference is now made to FIG. 12. The method 100 proceeds to
block 118 where the hard mask lines 2120 are removed or stripped
off the device 200 to form trenches 2310, 2320, 2330, and 2340.
This process may include an etch-back process such as a wet etch,
dry etch, plasma etch, and/or other suitable process. It is noted
that the material of the fill material 2240 (including fill
material features 2245 and 2247) is selected to have etching
selectivity with respect to the material in the hard mask lines
2121, 2122, 2123, and 2124 in FIG. 11. This etching selectivity
between the hard mask material and the fill material ensures that
hard mask material is preferentially etched away while the fill
material is not substantially etched. Upon completion of the
operation in block 118, the spacers 2200 define not only spacer
layer trenches 2210, 2220 and 2230 but also trenches 2310, 2320,
2330, and 2340. Out of these trenches, spacer layer trench 2210 is
divided by the fill material feature 2245 into two segments; spacer
layer trench 2220 is divided by the fill material feature 2247 into
two segments; and trench 2330 is divided by the spacer material
features 226 into three segments. These trenches represent the
pattern of conductive lines once all operations in method 100 are
carried out.
[0031] Referring now to FIG. 13, the method 100 in FIG. 1 proceeds
to blocks 120 and 122. At block 120, a pattern of the spacers 2200
and the fill material 2240 (including fill material features 2245
and 2247) is transferred onto an underlying layer, such as the base
layer 204. The transferred pattern in the base layer 204 may be
used to define a conductive layer (e.g., metal line) of an
interconnect structure such as by a damascene or dual-damascene
process. In some embodiments, to perform the operations in block
120, the base layer 204 is anisotropically etched using the spacers
2200 and the fill material 2240 as an etch mask. At block 120, a
conductive material 280 may then be filled or plated into the
trenches in the base layer 204. In some embodiments, the workpiece
200 (device 200) is subject to a planarization process, such as a
CMP process, to planarize the top surfaces of the conductive
materials 280 filled in the trenches of the base layer 204. The
trenches in the base layer 204 track the pattern of the spacers
2200 and the fill material 2240. Particularly, as shown in FIG. 13,
the metal line cut 2610 correspond to the fill material feature
2245, the metal line cut 2620 corresponds to the fill material
feature 2247, and the metal line cuts 2630 and 2640 correspond to
the spacer material features 226. In some embodiments, the
conductive material formed in the trenches includes copper (Cu).
However, other exemplary embodiments include conductive materials
such as aluminum (Al), copper alloys, tungsten (W), and/or other
suitable materials. The anisotropic etching processes used to
transfer the pattern onto the base layer 204 may include dry etch,
or plasma etch processes. Compared to certain techniques where the
fill material features divide the spacer layer trench 2220 into
three segments (as opposed to two segments divided by the fill
material feature 2247 in the present disclosure), the metal line
cut 2620 of the present disclosure removes a short segment of
conductive line formed within the area of the metal line cut 2620.
In some instances, such a short conductive line segment can act as
a dummy metal line between two adjacent gates of a semiconductor
device in a standard cell. Such a dummy metal line may reduce the
performance of the semiconductor device, such as the switching
speed of the semiconductor device, for example, by increasing
parasitic capacitance to nearby conductive features.
[0032] Referring now to FIG. 14, in some embodiments, only a
portion of the hard mask line 2124 in FIG. 11 is removed and a
leftover segment 2125 of the hard mask line 2124 is left in the
trench 2340 in FIG. 14. In those embodiments, the trench 2340 may
be shortened by the leftover hard mask segment 2125. Because the
trench 2340 represents a conductive line to be formed, shortening
of the trench 2340 also shortens the resulting conductive line.
Referring now to FIG. 15, the pattern of the spacer layer 2200, the
leftover hard mask segment 2125 and the fill material features 2240
are transferred to the base layer 204. The leftover hard mask
segment 2125 can result in a base layer segment 2650 to be formed.
The base layer segment 2650 cuts short the conductive metal line
2802. This partial hard mask line removal process can be an
alternative to the first metal cut etch process described
above.
[0033] By forming the L-shaped opening 224 in block 110, the method
100 of the present disclosure not only widens the process window
but also eliminates dummy conductive lines that may affect the
performance of the semiconductor device. As shown in FIG. 7, the
first line-shaped portion 2241 of the L-shaped opening 224 can be
substantially wider than the spacer layer trench 2220. The L-shaped
opening 224 aids the removal of BARC layer material in the spacer
layer trench 2210 and 2220 and filling of the fill material 2240.
In addition, because the fill material 2240 fills the spacer layer
trench 2220 in the first line-shaped portion 2241, no dummy
conductive line will be formed in that area as a result. In
summary, embodiments of the method 100 provide benefits of forming
functional conductive lines without the drawback of having dummy
metal lines that have a length substantially identical to a pitch
of gates of semiconductor devices in a standard cell. In addition,
the embodiments of the method 100 provide large process window and
increase process fidelity by forming an L-shaped opening in the
second cut metal etch step.
[0034] In one exemplary aspect, the present disclosure is directed
to a method of forming a semiconductor device. The method includes
providing a workpiece having a substrate, a material layer over the
substrate, and a hard mask layer over the material layer. The
method further includes patterning the hard mask layer to form a
first plurality of hard mask lines and forming a spacer material
layer over the first plurality of hard mask lines, resulting in a
second plurality of trenches defined by the spacer material layer,
wherein the second plurality of trenches tracks the first plurality
of hard mask lines. The method further includes forming an
antireflective layer over the spacer material layer, including over
the second plurality of trenches; forming an L-shaped opening in
the antireflective layer, thereby exposing at least two of the
second plurality of trenches; filling the L-shaped opening with a
fill material; etching the spacer material layer to expose the
first plurality of hard mask lines; and removing the first
plurality of hard mask lines. After removing the first plurality of
hard mask lines, the method further includes transferring a pattern
of the spacer material layer and the fill material onto the
material layer, resulting in trenches tracking the pattern; and
filling the trenches with a conductive material.
[0035] In an embodiment of the method, the L-shaped opening
includes a first line portion and a second line portion, and the
second line portion extends from an end of the first line portion
and is perpendicular to the first line portion. In a further
embodiment, a width of the first line portion is greater than about
a width of one of the second plurality of trenches and less than
about a pitch of the first plurality of hard mask lines. In another
further embodiment, the first line portion extends parallel to and
is over one of the second plurality of trenches. In an embodiment,
the second line portion extends across at least two of the second
plurality of trenches.
[0036] In another embodiment of the method, the forming of the
L-shaped opening in the antireflective layer comprises forming the
L-shaped opening over more than one of the second plurality of
trenches. In yet another embodiment, the removing of the first
plurality of hard mask lines includes removing a portion of the
first plurality of hard mask lines, thereby resulting in a leftover
hard mask segment; and the transferring the pattern of the spacer
material layer and fill material onto the material layer includes
transferring a pattern of the leftover hard mask segment on the
material layer.
[0037] In another exemplary aspect, the present disclosure is
directed to a method of forming a semiconductor device. The method
includes forming a first plurality of hard mask lines over a
material layer on a substrate, the first plurality of hard mask
lines extending along a first direction; and forming a spacer
material layer over the first plurality of hard mask lines,
resulting in a second plurality of trenches extending along the
first direction, each of the second plurality of trenches having
sidewalls formed of the spacer material layer, wherein the second
plurality of trenches tracks the first plurality of hard mask
lines. The method further includes forming a antireflective layer
over the second plurality of trenches; forming a first line-shaped
opening in the antireflective layer; filling the first line-shaped
opening with a fill material, wherein the first line-shaped opening
extends along the first direction; etching the spacer material
layer to expose the first plurality of hard mask lines; and
removing the first plurality of hard mask lines. After removing the
first plurality of hard mask lines, the method further includes
transferring a pattern of the spacer material layer and the fill
material onto the material layer, resulting in trenches tracking
the pattern; and filling the trenches with a conductive
material.
[0038] In an embodiment, the method further includes forming a
second line-shaped opening in the antireflective layer, wherein the
second line-shaped opening extends from an end of the first
line-shaped opening and along a second direction perpendicular to
the first direction; and filling the second line-shaped opening
with the fill material. In another embodiment, the first
line-shaped opening extends over one of the second plurality of
trenches. In a further embodiment, the second line-shaped opening
extends across at least two of the second plurality of
trenches.
[0039] In another embodiment, a width of the first line-shaped
opening is greater than about a width of one of the second
plurality of trenches of the second plurality of trenches and less
than about a pitch of the first plurality of hard mask lines. In
some embodiments, the forming of the first line-shaped opening in
the antireflective layer comprises forming the first line-shaped
opening over one of the second plurality of trenches. In some
embodiments, the removing of the first plurality of hard mask lines
includes removing a portion of the first plurality of hard mask
lines, thereby resulting in a leftover hard mask segment, and the
transferring the pattern of the spacer material layer and fill
material onto the material layer includes transferring a pattern of
the leftover hard mask segment on the material layer.
[0040] In yet another exemplary aspect, the present disclosure is
directed to a method of forming a semiconductor device. The method
includes providing a workpiece having a substrate, a material layer
over the substrate, and a hard mask layer over the material layer;
patterning the hard mask layer, thereby forming a first plurality
of hard mask lines; forming a spacer material layer over the first
plurality of hard mask lines, resulting in a second plurality of
trenches that tracks the first plurality of hard mask lines; and
forming a antireflective layer over the spacer material layer,
including over the second plurality of trenches. The method further
includes forming an L-shaped opening in the antireflective layer,
wherein the L-shaped opening includes a first line portion and a
second line portion perpendicular to the first line portion,
wherein the first line portion extends parallel to and is over one
of the second plurality of trenches. The method further includes
filling the L-shaped opening with a fill material; etching the
spacer material layer to expose the first plurality of hard mask
lines; and removing the first plurality of hard mask lines. After
removing the first plurality of hard mask lines, the method further
includes transferring a pattern of the spacer material layer and
the fill material onto the material layer, resulting in trenches
tracking the pattern; and filling the trenches with a conductive
material.
[0041] In an embodiment of the method, the second line portion
extends from an end of the first line portion and is perpendicular
to the first line portion. In another embodiment, the second line
portion extends across at least two of the second plurality of
trenches. In some embodiments, a width of the first line portion is
greater than about a width of one of the second plurality of
trenches of the second plurality of trenches and less than about a
pitch of the first plurality of hard mask lines.
[0042] In some embodiments, the removing of the first plurality of
hard mask lines includes removing a portion of the first plurality
of hard mask lines, thereby resulting in a leftover hard mask
segment, and the transferring the pattern of the spacer material
layer and fill material onto the material layer includes
transferring a pattern of the leftover hard mask segment on the
material layer. In some embodiments, after the removing of the
first plurality of hard mask lines, the fill material comprises a
line-shaped portion that fills one of the second plurality of
trenches.
[0043] The foregoing outlines features of several embodiments so
that those of ordinary skill in the art may better understand the
aspects of the present disclosure. Those of ordinary skill in the
art should appreciate that they may readily use the present
disclosure as a basis for designing or modifying other processes
and structures for carrying out the same purposes and/or achieving
the same advantages of the embodiments introduced herein. Those of
ordinary skill in the art should also realize that such equivalent
constructions do not depart from the spirit and scope of the
present disclosure, and that they may make various changes,
substitutions, and alterations herein without departing from the
spirit and scope of the present disclosure.
* * * * *