U.S. patent application number 15/980676 was filed with the patent office on 2019-11-21 for 3dic structure and method of manufacturing the same.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Co., Ltd.. The applicant listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Hsien-Wei Chen, Ming-Fa Chen, Tzuan-Horng Liu, Jiun-Heng Wang.
Application Number | 20190355696 15/980676 |
Document ID | / |
Family ID | 68392203 |
Filed Date | 2019-11-21 |
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United States Patent
Application |
20190355696 |
Kind Code |
A1 |
Liu; Tzuan-Horng ; et
al. |
November 21, 2019 |
3DIC STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Abstract
A 3DIC structure includes a first die and a second die on a
substrate and a bonding die. The boding die is electrically bonded
to the first die and the second die. The bonding die covers a
portion of a top surface of a scribe region between the first die
and the second die.
Inventors: |
Liu; Tzuan-Horng; (Taoyuan
City, TW) ; Chen; Hsien-Wei; (Hsinchu City, TW)
; Wang; Jiun-Heng; (Hsinchu County, TW) ; Chen;
Ming-Fa; (Taichung City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsinchu |
|
TW |
|
|
Assignee: |
Taiwan Semiconductor Manufacturing
Co., Ltd.
Hsinchu
TW
|
Family ID: |
68392203 |
Appl. No.: |
15/980676 |
Filed: |
May 15, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/481 20130101;
H01L 2224/9212 20130101; H01L 2224/08225 20130101; H01L 24/19
20130101; H01L 2224/05647 20130101; H01L 2224/94 20130101; H01L
23/49816 20130101; H01L 2224/05624 20130101; H01L 2224/12105
20130101; H01L 24/05 20130101; H01L 24/80 20130101; H01L 2224/97
20130101; H01L 2224/05655 20130101; H01L 2224/94 20130101; H01L
2224/05684 20130101; H01L 23/5226 20130101; H01L 24/92 20130101;
H01L 23/5389 20130101; H01L 2224/80099 20130101; H01L 24/83
20130101; H01L 24/94 20130101; H01L 2224/05624 20130101; H01L
2224/73201 20130101; H01L 2224/97 20130101; H01L 24/08 20130101;
H01L 2224/05655 20130101; H01L 24/97 20130101; H01L 2224/8001
20130101; H01L 2224/80896 20130101; H01L 24/09 20130101; H01L
2224/04105 20130101; H01L 2224/80948 20130101; H01L 25/0652
20130101; H01L 2224/03 20130101; H01L 2224/08145 20130101; H01L
2224/05639 20130101; H01L 2224/80 20130101; H01L 2224/05684
20130101; H01L 23/49827 20130101; H01L 2224/02372 20130101; H01L
2924/00014 20130101; H01L 2924/00014 20130101; H01L 2924/00014
20130101; H01L 2924/00014 20130101; H01L 2924/00014 20130101; H01L
24/32 20130101; H01L 2224/80 20130101; H01L 2224/80895 20130101;
H01L 2224/94 20130101; H01L 24/73 20130101; H01L 2224/05639
20130101; H01L 2224/05647 20130101; H01L 22/32 20130101; H01L
2224/80091 20130101; H01L 25/50 20130101 |
International
Class: |
H01L 25/065 20060101
H01L025/065; H01L 25/00 20060101 H01L025/00; H01L 21/66 20060101
H01L021/66; H01L 23/00 20060101 H01L023/00; H01L 23/522 20060101
H01L023/522; H01L 23/498 20060101 H01L023/498 |
Claims
1. A 3DIC structure, comprising: a first die and a second die on a
substrate; and a bonding die electrically bonded to the first die
and the second die; wherein the bonding die covers a portion of a
top surface of a scribe region between the first die and the second
die, wherein top surfaces of the first die and the second die are
partially covered by the bonding die, and a portion of the top
surface of the first die and a portion of the top surface of the
second die are exposed by the bonding die.
2. The 3DIC structure of claim 1, wherein the scribe region
comprises a portion of the substrate.
3. The 3DIC structure of claim 1, wherein the bonding die is bonded
to the first die and the second die through a hybrid bonding
structure.
4. The 3DIC structure of claim 3, wherein the hybrid bonding
structure comprises: a first bonding structure of the first die,
comprising a first conductive structure and a first dielectric
structure; a second bonding structure of the second die, comprising
a second conductive structure and a second dielectric structure;
and a third bonding structure of the bonding die, comprising a
plurality of bonding pads and a dielectric layer surrounding the
bonding pads, wherein the plurality of bonding pads are bonded to
the first conductive structure and the second conductive structure,
the dielectric layer is bonded to the first dielectric structure
and the second dielectric structure.
5. The 3DIC structure of claim 4, wherein the first conductive
structure of the first bonding structure is electrically connected
to an interconnect structure of the first die.
6. The 3DIC structure of claim 5, wherein the first conductive
structure of the first bonding structure is landing on a top metal
feature of the interconnect structure.
7. The 3DIC structure of claim 5, wherein the first die further
comprises a pad on the interconnect structure, the first conductive
structure is landing on the pad and is electrically connected to
the interconnect structure through the pad.
8. The 3DIC structure of claim 1, wherein the first conductive
structure comprises a first via and a second via on the first via,
a diameter of the second via is larger than a diameter of the first
via.
9. The 3DIC structure of claim 1, wherein an area of a top surface
of the first conductive structure is equal to or larger than an
area of a bottom surface of the first conductive structure.
10. A 3DIC structure, comprising: a plurality of dies on a
substrate arranged in an array, wherein portions of the substrate
are located in scribe regions laterally between the plurality of
dies; a bonding die across the scribe region and electrically
bonded to the plurality of dies; a gap fill structure on the
plurality of dies and on sides of the bonding die; a redistribution
layer (RDL) on the gap fill structure, electrically connected to
the plurality of the dies through a plurality of through dielectric
vias (TDVs), wherein the plurality of dies are electrically
connected to each other through the bonding die, the TDVs, and the
RDL, wherein top surfaces of the plurality of dies are partially
covered by the bonding die, and portions of the top surfaces of the
plurality of dies are exposed by the bonding die and covered by the
gap fill structure.
11. The 3DIC structure of claim 10, wherein the bonding die is
bonded to two adjacent dies of the plurality of dies, and across
the scribe region between the two adjacent dies.
12. The 3DIC structure of claim 10, wherein the bonding die is
bonded to four adjacent dies arranged in a 2.times.2 array of the
plurality of dies and covers the top surface of a crisscross
portion of the scribe regions between the four adjacent dies.
13. The 3DIC structure of claim 10, wherein the bonding die
comprises a plurality of bonding dies, and sizes of the plurality
of bonding dies are the same or different.
14. The 3DIC structure of claim 10, wherein the bonding die is in
contact with a top surface of the scribe region.
15. A method of manufacturing a 3DIC structure, comprising: bonding
a plurality of bonding dies to a plurality of dies in a first
region of a wafer, wherein each of the bonding dies is bonded to at
least two of the dies; forming a gap fill structure on the wafer
and on sides of the bonding dies; forming a RDL on the gap fill
structure, wherein the plurality of dies are electrically connected
to each other through the RDL and the bonding dies; performing a
die saw process on the wafer to separate the plurality of dies in
the first region from a second region other than the first region
of the wafer, wherein top surfaces of the plurality of dies are
partially covered by the plurality of bonding dies, and portions of
the top surfaces of the plurality of dies are exposed by the
plurality of bonding dies and covered by the gap fill
structure.
16. The method of claim 15, wherein the bonding the plurality of
bonding dies to the plurality of dies is performed by a hybrid
bonding process.
17. The method of claim 16, wherein the hybrid bonding process
comprises: bonding a plurality of bonding pads of the bonding die
to conductive structures of the dies; and bonding a dielectric
layer of the bonding die to dielectric structures of the dies.
18. The method of claim 17, wherein the bonding die is further
bonded to an upper portion of a scribe region between the dies.
19. The method of claim 15, further comprising forming a plurality
of TDVs in the gap fill structure.
20. The method of claim 15, wherein the forming the plurality of
TDVs is performed before or after the gap fill structure is formed.
Description
BACKGROUND
[0001] The semiconductor industry has experienced rapid growth due
to continuous improvements in the integration density of various
electronic components (i.e., transistors, diodes, resistors,
capacitors, etc.). For the most part, this improvement in
integration density has come from continuous reductions in minimum
feature size, which allows more of the smaller components to be
integrated into a given area. These smaller electronic components
also demand smaller packages that utilize less area than previous
packages. Some smaller types of packages for semiconductor
components include quad flat packages (QFPs), pin grid array (PGA)
packages, ball grid array (BGA) packages, flip chips (FC),
three-dimensional integrated circuits (3DICs), wafer level packages
(WLPs), and package on package (PoP) devices and so on.
[0002] 3DICs provide improved integration density and other
advantages. However, there are quite a few challenges to be handled
for the technology of 3DICs.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] FIG. 1A to FIG. 1F are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to some
embodiments of the disclosure.
[0004] FIG. 2A to FIG. 2D are schematic cross-sectional views
respectively illustrating a die of a wafer according to some
embodiments of the disclosure.
[0005] FIG. 3A to FIG. 3E are top views of a 3DIC structure
according to some embodiments of the disclosure.
[0006] FIG. 4A is a top view of two dies and a scribe region of a
3DIC structure according to some embodiments of the disclosure.
[0007] FIG. 4B is a cross-sectional view along a line A-A' of FIG.
4A according to some embodiments of the disclosure.
DETAILED DESCRIPTION
[0008] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a second
feature over or on a first feature in the description that follows
may include embodiments in which the second and first features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the second and first
features, such that the second and first features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0009] Further, spatially relative terms, such as "beneath",
"below", "lower", "on", "above", "upper" and the like, may be used
herein for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the FIG.s. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the FIG.s. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0010] Other features and processes may also be included. For
example, testing structures may be included to aid in the
verification testing of the 3D packaging or 3DIC devices. The
testing structures may include, for example, test pads formed in a
redistribution layer or on a substrate that allows the testing of
the 3D packaging or 3DIC, the use of probes and/or probe cards, and
the like. The verification testing may be performed on intermediate
structures as well as the final structure. Additionally, the
structures and methods disclosed herein may be used in conjunction
with testing methodologies that incorporate intermediate
verification of known good dies to increase the yield and decrease
costs.
[0011] FIG. 1A to FIG. 1F are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to some
embodiments of the disclosure.
[0012] Referring to FIG. 1A, a wafer 50 including a substrate 10 is
provided. The wafer 50 includes a plurality of die regions DR and a
plurality of scribe regions 21 between the die regions DR. The
substrate 10 is a continuous substrate extending from the die
regions DR to the scribe regions 21. The die regions DR are the
regions on which a plurality of dies 20 is formed. The dies 20 are
spaced or electrically separated from each other through the scribe
regions 21 therebetween. The dies 20 may respectively be an
application-specific integrated circuit (ASIC) chip, an analog
chip, a sensor chip, a wireless and radio frequency chip, a voltage
regulator chip or a memory chips, for example. The dies 20 may be
the same types of dies or the different types of dies. In some
embodiments, the dies 20 are arranged in an array in the wafer 50.
The number of the dies 20 formed in the wafer 50 shown in FIG. 1A
is merely for illustration, and the disclosure is not limited
thereto. The number of the dies may be adjusted according to design
of products. The structure of the die 20 is described below.
[0013] FIGS. 2A to 2D are the schematic cross-sectional views
respectively illustrating a die of a wafer according to some
embodiments of the disclosure.
[0014] Referring to FIG. 1A and FIG. 2A, in some embodiments, a die
20a of the wafer 50 includes the substrate 10, a device layer 11,
an interconnect structure 14, a passivation layer 15, and a
plurality of the pads 16. The substrate 10 is a semiconductor
substrate such as a silicon substrate. The substrate 10 is, for
example, a bulk silicon substrate, a doped silicon substrate, an
undoped silicon substrate, or a silicon-on-insulator (SOI)
substrate. The dopant of the doped silicon substrate may be an
N-type dopant, a P-type dopant or a combination thereof. The
substrate 10 may also be formed by other semiconductor materials.
The other semiconductor materials include but are not limited to
silicon germanium, silicon carbide, gallium arsenide, or the like.
The substrate 10 includes active areas and isolation structures
(not shown).
[0015] The device layer 11 includes a wide variety of devices (not
shown) formed on the active areas of the substrate 10. In some
embodiments, the devices include active components, passive
components, or a combination thereof. In some embodiments, the
devices include integrated circuit devices, for example. In some
embodiments, the devices are, for example, transistors, capacitors,
resistors, diodes, photodiodes, fuse devices, or other similar
devices. That is to say, the wafer 50 is a wafer with devices
formed in it.
[0016] The interconnect structure 14 is formed over the substrate
10 and the device layer 11. In some embodiments, the interconnect
structure 14 includes a dielectric structure 12 and a plurality of
metal features 13. The dielectric structure 12 includes silicon
oxide, silicon oxynitride, silicon nitride, USG, low dielectric
constant (low-k) materials or a combination thereof. In some
embodiments, the low-k material may have a k value of less than
about 2.5, and hence is sometimes referred to as an extreme low-k
(ELK) dielectric material. In some embodiments, the low-k material
includes a polymer based material, such as benzocyclobutene (BCB),
FLARE.RTM., or SILK.RTM.; or a silicon dioxide based material, such
as hydrogen silsesquioxane (HSQ) or SiOF. The dielectric structure
12 may include a single layer or multiple layers. In an embodiment,
the dielectric structure is a multilayer structure and includes ELK
dielectric material and USG thereon.
[0017] The metal features 13 may be made of tungsten (W), copper
(Cu), copper alloys, aluminum (Al), aluminum alloys, or a
combination thereof. The metal features 13 are formed in the
dielectric structure 12 and electrically connected with each other.
In some embodiments, the metal features 13 include one or more
layers of plugs and metal lines. The metal lines are extending
along a direction parallel to the top surface of the substrate 10.
The plugs include contact plugs and via plugs. The contact plugs
electrically connect the metal lines to the devices formed in the
device layer 11. The via plugs electrically connect the metal lines
in different layers. In some embodiments, the number of the layers
of the metal lines is 11, for example, but the disclosure is not
limited thereto. A portion of the metal features 13, such as top
metal feature TP (or referred as top metal line), is exposed by the
dielectric structure 12. In some embodiments, the top metal feature
TP includes fine-pitch metallization patterns. The pitch of the top
metal feature TP ranges from 0.8 .mu.m to 3 .mu.m, or 0.5 .mu.m to
5 .mu.m, for example.
[0018] In some embodiments, one or more through-silicon vias (TSVs)
9 inserts into the substrate 10 to be electrically connected to the
interconnect structure 14. In some embodiments, the TSV 9 includes
a conductive via and a liner (not shown) surrounding the sidewalls
and bottom surface of the conductive via. The conductive via may
include copper, copper alloys, aluminum, aluminum alloys, Ta, TaN,
Ti, TiN, CoW or combinations thereof. The liner may include
dielectric material, such as silicon oxide. In some embodiments,
the TSV 9 does not penetrate through the substrate 10 at the
beginning, and the bottom surface of the TSV 9 is still covered by
the substrate 10. In subsequent processes, the substrate 10 may be
thinned by a grinding or planarization process, so as to expose the
bottom surface of the TSV 9, and the TSV 9 may be connected to
other components.
[0019] The passivation layer 15 is formed over the interconnect
structure 14. In some embodiments, the passivation layer 15 is also
referred as a dielectric layer. The passivation layer 15 may be a
single layer structure or a multilayer structure. The passivation
layer 15 includes an insulating material such as silicon oxide,
silicon nitride, polymer, or a combination thereof. The polymer is,
for instance, polybenzoxazole (PBO), polyimide, benzocyclobutene
(BCB), a combination thereof, or the like.
[0020] In some embodiments, the pads 16 are formed on the
passivation layer 15 and penetrate through the passivation layer 15
to be electrically connected to the metal feature 13 of the
interconnect structure 14, and provide an external connection of
the devices in the device layer 11. The material of the pads 16 may
include metal or metal alloy, such as aluminum, copper, nickel, or
alloys thereof.
[0021] Still referring to FIG. 2A, in some embodiments, a bonding
structure 19 is formed on the pads 16 and the passivation layer 15.
The bonding structure 19 includes a dielectric structure 17 and a
plurality of conductive structures 18. In some embodiments, the
dielectric structure 17 covers the sidewalls and top surfaces of
the pads 16, and the top surface of the passivation layer 15. The
conductive structure 18 penetrates through the dielectric structure
17 to be electrically connected to the pads 16, and further
electrically connected to the interconnect structure 14 through the
pads 16. In some embodiments, the top surface of the conductive
structure 18 is exposed by the dielectric structure 17, and the
conductive structure 18 is also referred as a bonding pad.
[0022] The dielectric structure 17 includes oxide such as silicon
oxide, nitride such as silicon nitride, oxynitride such as silicon
oxynitride, undoped silicate glass (USG), tetraethyl orthosilicate
(TEOS), or a combination thereof. The material of the dielectric
structure 17 may be the same as or different from the material of
the passivation layer 15. The dielectric structure 17 may be formed
by a suitable process such as spin coating, chemical vapor
deposition (CVD) or the like.
[0023] The dielectric structure 17 may include a single layer or
multiple layers. In some embodiments, the dielectric structure 17
includes a first dielectric layer 17a and a second dielectric layer
17b on the first dielectric layer 17a. In some embodiments, the
first dielectric layer 17a and the second dielectric layer 17b
include different materials. The first dielectric layer 17a
includes, for example, oxide such as silicon oxide, USG, TEOS or a
combination thereof. The second dielectric layer 17b includes, for
example, oxide such as silicon oxide, USG or a combination thereof.
In some embodiments, the thickness of the first dielectric layer
17a is larger than the thickness of the second dielectric layer
17b.
[0024] In some embodiments, the conductive structure 18 may be
formed of aluminum, copper, nickel, gold, silver, tungsten, or a
combination thereof and formed by electro-chemical plating process,
CVD, PVD or the like. In some embodiments, the conductive structure
18 is a via formed in the dielectric structure 17. The conductive
structure 18 may be a single layer structure or a multi-layer
structure. In some embodiments, the conductive structure 18 may be
formed by the following process: openings (or referred as via
holes) are formed in the dielectric structure 17 to expose portions
of the top surfaces of the pads 16, a conductive material layer in
formed on the dielectric structure 17 and fills into the openings,
thereafter, a planarization process such as a chemical mechanical
polishing (CMP) process is performed to remove the conductive
material layer on the top surface of the dielectric structure 17,
and remain the conductive structures 18. In some embodiments, the
top surface of the conductive structure 18 is substantially
coplanar with the top surface of the dielectric structure 17.
[0025] In some embodiments, the conductive structure 18 includes a
first via 18a and a second via 18b electrically connected to each
other. The materials of the first via 18a and the second via 18b
may be the same or different. The first via 18a and the second via
18b may be formed by a dual damascene process, for example. The
cross-section shapes of the first via 18a and the second via 18b
may respectively be square, rectangle, trapezoid, or the like. The
sidewalls of the first via 18a and the second via 18b may
respectively be straight or inclined. The cross-section shape of
the conductive structure 18 may be T-shaped or the like.
[0026] In some embodiments, the first via 18a is formed in the
first dielectric layer 17a and landing on the pad 16. The top
surface of the first via 18a is substantially coplanar with the top
surface of the first dielectric layer 17a. The second via 18b is
formed in the second dielectric layer 17b and on the first via 18a.
The top surface of the second via 18b is substantially coplanar
with the top surface of the second dielectric layer 17b. In some
embodiments, the height H1 of the first via 18a is higher than the
height H2 of the second via 18b, and the diameter (or top diameter)
DA1 of the first via 18a is less than the diameter (bottom diameter
or top diameter) DA2 of the second via 18b. In some embodiments,
the height H1 of the first via 18a ranges from 1 .mu.m to 4 .mu.m,
for example. The diameter DA1 of the first via 18a ranges from 1
.mu.m to 3 .mu.m, for example. The height H2 of the second via 18b
ranges from 0.5 .mu.m to 1 .mu.m, for example. The diameter DA2 of
the second via 18b ranges from 2 .mu.m to 5 .mu.m, for example. In
some embodiments, the pitch P1 of the second via 18b is in a range
of 5 .mu.m to 20 .mu.m. The term "pitch" described herein refers to
a width of the feature (e.g., line) plus the distance to the next
immediately adjacent feature. In other words, the pitch P1 refers
to the diameter DA2 of the second via 18b plus the distance between
the adjacent two second vias 18b.
[0027] In the embodiment described in FIG. 2A, the conductive
structure 18 is landing on the pads 16, but the disclosure is not
limited thereto.
[0028] Referring to FIG. 2B, a die 20b of the wafer 50 is similar
to the die 20a shown in FIG. 2A, except that the conductive
structure 18 of the die 20b is landing on the top metal feature TP
of the interconnect structure 14.
[0029] Referring to FIG. 2B, the conductive structure 18 includes a
first via 18a' and a second via 18b on the first via 18a'. The
first via 18a' is located at a side of the pad 16 and physically
separated from the pad 16. The first via 18a' penetrates through
the first dielectric layer 17a and the passivation layer 15 to be
electrically connected to the metal feature 13 of the interconnect
structure 14. In some embodiments, the first via 18a' is landing on
the top metal feature TP, but the disclosure is not limited
thereto. The first via 18a' may be landing on any layer of the
metal feature 13. The height H11 of the first via 18a' ranges from
3 .mu.m to 6 .mu.m, for example. The other structure features of
the die 20b are substantially the same as those of the die 20a, and
are not described again.
[0030] In alternative embodiments, the conductive structure 18 may
include a large deep via instead of two vias. Referring to FIG. 2C,
a die 20c of the wafer 50 is similar to the die 20a, except that
the conductive structure 18 includes a plurality of vias 18b'
directly landing on the pads 16 and does not include first vias
18a.
[0031] Referring to FIG. 2C, the conductive structure 18 may be
formed by a single-damascene process. The cross-section shape of
the conductive structure 18 (that is, the via 18b') is square,
rectangle, trapezoid, or the like. The sidewalls of the conductive
structure 18 may be straight or inclined. In some embodiments, the
conductive structure 18 has a uniform diameter from the top surface
to the bottom surface thereof. In some other embodiments, the
conductive structure 18 has a diameter decreasing gradually from
the top surface to the bottom surface thereof. That is to say, the
area or the diameter of the top surface of the conductive structure
18 is equal to or larger than the area or the diameter of the
bottom surface of the conductive structure 18. The via 18b'
penetrates through the second dielectric layer 17b and the first
dielectric layer 17a of the dielectric structure 17, so as to land
on the pad 16 and electrically connect to the interconnect
structure 14 through the pad 16. The height H2' of the via 18b'
ranges from 2 .mu.m to 5 .mu.m, for example. The diameter DA2' of
the via 18b' is substantially the same as the diameter DA2 of the
second via 18b described in FIG. 2A. In this embodiment, the
dielectric structure 17 may be a single-layer structure. The other
structural features of the die 20c are substantially the same as
those of die 20a or the die 20b, and are not described again.
[0032] In alternative embodiments, the conductive structure 18
including a large deep via may directly land on the metal feature
13 of the interconnect structure 14. Referring to FIG. 2D, a die
20d of the wafer 50 is similar to the die 20b, except that the
conductive structure 18 includes a plurality of vias 18b'' landing
on the metal features 13.
[0033] Referring to FIG. 2D, the conductive structure 18 includes a
plurality of vias 18b''. The via 18b'' penetrates through the
second dielectric layer 17b and the first dielectric layer 17a of
the dielectric structure 17 and the passivation layer 15 to land on
the metal feature 13. In some embodiments, the via 18b'' is landing
on the top metal feature TP of the interconnect structure 14. The
height H2'' of the via 18b'' ranges from 4 .mu.m to 7 .mu.m, for
example. The other structural features of the die 20d are
substantially the same as those of die 20c shown in FIG. 2C, and
are not described again.
[0034] Referring back to FIG. 1A, the dies 20 of the wafer 50 shown
in FIG. 1A may include the structure similar to any one of the die
20a, 20b, 20c and 20d shown in FIGS. 2A to 2D. For the sake of
brevity, the structure of the die 20 is not specifically shown, and
the bonding structure 19 is briefly shown in FIG. 1A.
[0035] Referring to FIG. 1B, a plurality of bonding dies 30 are
provided. In some embodiments, the bonding dies 30 are known good
dies (KGDs) cutting from a wafer by a die saw process, or a plasma
dicing process. The bonding dies 30 may be the same type of dies or
different types of dies. The thickness T1 of the die 30 ranges from
50 .mu.m to 200 .mu.m.
[0036] In some embodiments, the bonding die 30 includes a substrate
23, a dielectric structure 24, a metal interconnection 25 and a
bonding structure 29. The substrate 23 may include materials the
same as or different from those of the substrate 10 of the wafer 50
(FIG. 1A). In some embodiments, the substrate 23 may be a
semiconductor substrate, a polymer substrate, a dielectric
substrate, a ceramic substrate, or a combination thereof. The
semiconductor substrate is, for example, a doped silicon substrate,
an undoped silicon substrate or a semiconductor-on-insulator (SOI)
substrate. The doped silicon substrate may be P-type doped, N-type
doped, or a combination thereof.
[0037] The dielectric structure 24 is formed over the substrate 23.
The dielectric structure 24 may be a single-layer structure or a
multi-layer structure. The material of the dielectric structure may
be the same as or different from the material of the dielectric
structure 12, which is not described again.
[0038] The metal interconnection 25 is formed over the substrate 23
and in the dielectric structure 24. The metal interconnection 25
may be formed using single damascene and/or dual-damascene process.
The structural feature and the material of the metal
interconnection 25 are similar to, the same as or different from
those of the metal features 13 shown in FIG. 2A. In some
embodiments, the metal interconnection 25 includes a plurality of
plugs 25b and metal lines 25a connected to each other. The metal
lines are extending along a direction parallel to a top surface of
the substrate 23. The plugs 25b are located between the metal lines
25a and extending along a direction perpendicular to the top
surface of the substrate 23. The metal lines 25a in different
layers are connected to each other through the plugs 25b. In some
embodiments, the number of the layers of the metal lines 25a in the
metal interconnection 25 may be less than, equal to or more than
the number of the layers of the metal lines in the metal feature 13
(FIGS. 2A to 2D). In some embodiments, the number of the layers of
the metal lines 25a ranges from 1 to 3, such as 3, but the
disclosure is not limited thereto. In some embodiments, the pitch
of the metal line 25a of the metal interconnection 25 may be the
same as or different from the pitch of the metal lines of the metal
feature 13 (such as the metal line on which the conductive
structure 18 is landing) (FIG. 2A). In some embodiments, the pitch
of the metal line 25a of the metal interconnection 25 may be the
same as or different from the pitch of the top metal feature TP
(FIG. 2A). In some embodiments, the ratio of the pitch of the metal
line 25a to the pitch of the top metal feature TP ranges from 0.5
to 31, such as 30. The distance E2 between the metal lines 25a of
the metal interconnection 25 may be less than, equal to, or
slightly larger than the distance E1 between the metal lines of the
metal feature 13 (such as, the distance between the top metal
feature TP and the underlying metal line thereof adjacent
thereto).
[0039] The bonding structure 29 includes a dielectric layer 27 and
a plurality of bonding pads 28 formed in the dielectric layer 27.
The bonding pads 28 are formed on and electrically connected to the
metal interconnection 25 and serve as external connection of the
bonding die 30. The dielectric layer 27 and the bonding pad 28 may
respectively include materials the same as or different from those
of the dielectric structure 17 and the conductive structure 18
shown in FIG. 2A. In some embodiments, the dielectric layer 27 may
include oxide such as silicon oxide, nitride such as silicon
nitride, oxynitride such as silicon oxynitride, undoped silicate
glass (USG), tetraethyl orthosilicate (TEOS), or a combination
thereof. The bonding pad 28 includes aluminum, copper, nickel,
gold, silver, tungsten, or a combination thereof. The forming
method of the bonding structure 29 is similar to and may be the
same as or different from that of the bonding structure 19
[0040] The diameter DA10 and the pitch P10 of the bonding pad 28
may be the same as or different from those of the pad 18 of the die
20 (FIG. 1A). In some embodiments, the diameter DA10 (or top
diameter) of the bonding pad 18 ranges from 0.4 .mu.m to 20 .mu.m,
the pitch P10 of the bonding pad 18 ranges from 0.8 .mu.m to 40
.mu.m.
[0041] In some embodiments, the bonding die 30 is free from active
or passive devices and is just used for connecting the dies 20 in
the wafer 50 in subsequent processes. The substrate 23 is, for
example, a bulk substrate. The metal interconnection 25 is located
on the bulk substrate 23, and no device is formed between the metal
interconnection 25 and the bulk substrate 23. However, the
disclosure is not limited thereto. In some other embodiments,
active or passive devices, such as transistors, diodes, capacitors,
resistors, etc., may be formed in and/or on the substrate 23 and
may be interconnected by the metal interconnection 25 to form an
integrated circuit.
[0042] In some embodiments, the bonding die 30 may include TSVs
(not shown) in the substrate 23 and electrically connected to the
metal interconnection 25, the TSV may be surrounded by the
substrate 23. The structure feature of the TSV in the bonding die
30 may be similar to the TSV 9 of the die 20 shown in FIG. 2A.
[0043] Referring to FIG. 1C, the bonding dies 30 are turned over to
face the wafer 50. That is, the bonding dies 30 and the wafer 50
are configured as face to face. In some embodiments, one bonding
die 30 is aligned with two adjacent dies 20 of the wafer 50. The
bonding structure 29 of the bonding die 30 is aligned with the
bonding structures 19 of the adjacent two dies 20. In detail, the
bonding pads 28 of the bonding structure 29 are aligned with the
pads 18 of the bonding structures 19. The dielectric layer 27 of
the bonding structure 29 is aligned with the dielectric structure
17 of the bonding structures 19.
[0044] The bonding dies 30 are bonded to the wafer 50 through a
suitable bonding process, such as a hybrid bonding process, a
fusion bonding process, or a combination thereof. In some
embodiments in which the bonding process includes a hybrid bonding
process, the hybrid bonding involves at least two types of bonding,
including metal-to-metal bonding and non-metal-to-non-metal bonding
such as dielectric-to-dielectric bonding. That is to say, the
bonding pads 28 and the pads 18 are bonded by metal-to-metal
bonding, the dielectric layer 27 and the dielectric structure 17
are bonded by dielectric-to-dielectric bonding.
[0045] In other word, the bonding die 30 and the wafer 50 are
bonded to each other by a hybrid bonding structure 70. The hybrid
bonding structure 70 includes portions of the bonding structures 19
of two adjacent dies 20 and the bonding structure 29 of the bonding
die 30. In some embodiments, the bonding die 30 is also bonded to
the scribe region 21 between the dies 20, and the hybrid bonding
structure 70 further includes an upper portion UP of the scribe
region 21. In some embodiments, the upper portion UP of the scribe
region 21 includes dielectric materials or/and conductive
materials.
[0046] In some embodiments, the bonding process may be performed as
below: first, to avoid the occurrence of the unbonded areas (i.e.
interface bubbles), the to-be-bonded surfaces of the bonding dies
30 and the wafer 50 (that is, the surfaces of the bonding structure
29 and the bonding structure 19 and the scribe region 21) are
processed to be sufficiently clean and smooth. Then, the bonding
dies 30 and the dies 20 of the wafer 50 are aligned and placed in
physical contact at room temperature with slight pressure to
initiate a bonding operation. Thereafter, a thermal treatment such
as an annealing process at elevated temperatures is performed to
strengthen the chemical bonds between the to-be-bonded surfaces of
the dies 30 and the wafer 50 and to transform the chemical bonds
into covalent bonds.
[0047] Still referring to FIG. 1C, the bonding dies 30 are
electrically bonded to the wafer 50, one of the bonding dies 30 is
electrically bonded to two of the dies 20. The bonding die 30 is
located on two adjacent dies 20 and across the scribe region 21
between the two dies 20. That is to say, the bonding die 30 covers
portions of top surfaces of the two adjacent dies 20 and the top
surface of the scribe region 21 between the two adjacent dies 20.
The adjacent two dies 20 of the wafer 50 are electrically connected
through the bonding die 30.
[0048] In some embodiments, after the bonding dies 30 are bonded to
the wafer 50, a thinning process is performed on the bonding dies
30 to thin the substrates 23. The thinning process includes
grinding process, CMP process, or a combination thereof.
[0049] Referring to FIG. 1D, a gap fill structure 32 is formed on
the wafer 50 and at the sides of the bonding dies 30, so as to
cover the top surface of the wafer 50 and the sidewalls of the
bonding dies 30. The material of the gap fill structure 32 may
include oxide such as silicon oxide, nitride such as silicon
nitride, oxynitride such as silicon oxynitride, a molding compound,
a molding underfill, a resin such as epoxy, a combination thereof,
or the like. In some embodiments, the top surface of the gap fill
structure 32 and the top surfaces of the bonding dies 30 are
substantially coplanar with each other.
[0050] In some embodiments, the gap fill structure 32 may be formed
by the following process: a gap fill material is formed on the
wafer 50 and the bonding dies 30 by, for example, a deposition
process such as CVD, a molding process, or a molding underfilling
(MUF) process. The gap fill material cover the top surface of the
wafer 50, the top surfaces and the sidewalls of the bonding dies
30. Thereafter, a planarization process such as a CMP process is
performed to remove a portion of the gap fill structure 32 or/and
portions of the substrates 23 of the bonding dies 30. In some
embodiments, the bonding dies 30 are further thinned during the
planarization process, and a thickness T2 of the thinned bonding
die 30 ranges from 10 .mu.m to 60 .mu.m, such as 20 .mu.m.
[0051] Referring to FIG. 1E, a plurality of through dielectric vias
(TDVs) 33 are formed in the gap fill structure 32 and on the pads
18 of the dies 20. The TDV 33 penetrates through the gap fill
structure 32 to be in electrical contact with the pads 18 of the
dies 20. The TDVs 33 include conductive materials such as copper,
nickel, solder, alloys thereof, or the like, or a combination
thereof. The TDVs 33 are formed by, physical vapor deposition
(PVD), electroplating, or a combination thereof, for example.
[0052] In some embodiments, the TDV 33 includes a seed layer and a
conductive layer formed on the seed layer. The seed layer is, for
example, a titanium or/and copper composited layer. The conductive
layer is, for example, a copper layer.
[0053] In some embodiments, the TDVs 33 may be formed after or
before the gap fill structure 32 is formed. In some embodiments in
which the TDVs 33 are formed after the gap fill structure 32 is
formed, the TDVs 33 may be formed by the following processes: the
gap fill structure 32 is patterned by photolithography and etching
process to form a plurality of via holes. The via holes penetrate
through the gap fill structure 32 to expose portions of top
surfaces of the pads 18. A seed material layer is formed on the
substrate 10 by a suitable technique such as a sputtering process,
the seed material layer fills into the via holes to cover the
sidewalls and bottom surfaces of the via holes, and may further
cover the top surfaces of the gap fill structure 32 and the bonding
dies 30. A conductive material layer is formed on the seed material
layer by an electroplating process. The conductive material layer
fills into the via holes and may further protrude from the top
surface of the gap fill structure 32. Thereafter, a planarization
process is performed to remove the conductive material layer and
the seed material layer on the gap fill structure 32 or/and on the
bonding dies 30, and remain the conductive layer and the seed layer
in the via holes.
[0054] Still referring to FIG. 1E, a redistribution layer (RDL) 34
is formed on the TDVs 33 and the gap fill structure 32 or/and on
the back sides (the side opposite to the front side and further
from the bonding pad 28 than the front side) of the bonding dies
30. The RDL 34 is electrically connected to the pads 18 of the dies
20 through the TDVs 33. The dies 20 are electrically connected to
each other through the bonding dies 30, the TDVs 33 and the RDL
34.
[0055] In some embodiments, the RDL 34 includes conductive
materials. The conductive material includes metal such as copper,
nickel, titanium, a combination thereof or the like, and is formed
by an electroplating process. In some embodiments, the RDL 34
includes a seed layer and a conductive layer formed on the seed
layer. The seed layer may be a metal seed layer such as a copper
seed layer. In some embodiments, the seed layer includes a first
metal layer such as a titanium layer and a second metal layer such
as a copper layer over the first metal layer. The conductive layer
may be copper or other suitable metals.
[0056] In some embodiments, the RDL 34 may be formed by the
following process: A seed layer is formed on the wafer 50, by a
sputtering process, for example. The seed layer covers the top
surfaces of the gap fill structure 32, the TDVs 33 and the bonding
dies 30. A patterned mask such as a patterned photoresist is then
formed on the top surface of the gap fill structure 32 and the
bonding dies 30. The patterned mask includes openings exposing a
portion of seed layer on the top surfaces of the TDVs 33, the gap
fill structure 32 or/and on the bonding dies 30. A conductive layer
is formed on the seed layer exposed by the patterned mask by an
electroplating process, for example. Thereafter, the patterned mask
is stripped and the seed layer not covered by the conductive layer
is removed by an etching process. The conductive layer and the
underlying seed layer form the RDL 34.
[0057] Referring to FIG. 1F, a dielectric layer 35 is formed over
the wafer 50. The dielectric layer 35 may include silicon oxide,
silicon nitride, silicon oxynitride, USG, TEOS, a polymer, or a
combination thereof. The polymer includes a photo-sensitive
material such as polybenzoxazole (PBO), polyimide (PI),
benzocyclobutene (BCB), a combination thereof or the like. The
forming method of the dielectric layer 35 include suitable
fabrication techniques such as spin coating, chemical vapor
deposition (CVD), plasma-enhanced chemical vapor deposition
(PECVD), lamination or the like.
[0058] In some embodiments, the dielectric layer 35 covers the top
surface of the gap fill structure 32, the top surface of the
bonding dies 30, the top surface of the RDL 34 and the sidewalls of
the RDL 34. The dielectric layer 35 may include a single layer or
multi layers.
[0059] Thereafter, a plurality of openings 36 are formed in the
dielectric layer 35 to expose portions of the top surface of the
RDL 34. The forming method of the openings 36 may include
photolithography and etching processes, a laser drilling process,
or a combination thereof.
[0060] A plurality of conductive pads 37 are formed in the openings
36 and on the RDL 34. The conductive pads 37 may be formed of metal
or metal alloy, such as aluminum, copper, nickel, or alloys
thereof, and may be formed by a dual-damascene process, PVD,
electroplating, or a combination thereof. The conductive pad 37
penetrates through the dielectric layer 35 to be in electrical
contact with the top surface of the RDL 34. In some embodiments,
the top surfaces of the conductive pads 37 are substantially
coplanar with the top surface of the dielectric layer 35, but the
disclosure is not limited thereto. In some other embodiments, the
conductive pad 37 protrudes from the top surface the dielectric
layer 35.
[0061] Thereafter, a plurality of conductive terminals 38 are
formed on and electrically connected to the conductive pad 37. The
conductive terminals 38 may be micro bumps, conductive pillars,
solder balls, controlled collapse chip connection (C4) bumps, or a
combination thereof. In some embodiments, the material of the
conductive terminals 38 includes copper, aluminum, lead-free alloys
(e.g., gold, tin, silver, aluminum, or copper alloys) or lead
alloys (e.g., lead-tin alloys). The conductive terminals 38 may be
formed by a suitable process such as evaporation, plating, ball
dropping, screen printing and reflow process, a ball mounting
process or a C4 process.
[0062] The conductive terminals 38 are electrically connected to
the dies 20 through the conductive pads 37, the RDL 34, the TDVs 33
and the bonding dies 30.
[0063] In some embodiments, thereafter, a die saw process or a
plasma dicing process is performed on the scribe region 21 of the
wafer 50 to separate the dies 20 which are not electrically
connected to each other, and a 3DIC structure 100 is formed. In
some embodiments, subsequent processes such as packaging process
may be further performed on the 3DIC structure 100, the 3DIC
structure 100 may be further connected to other components (such as
dies, packages) through the TSVs 9 (FIG. 2A) or the conductive
terminals 38.
[0064] Referring to FIG. 1F, the 3DIC structure 100 includes the
substrate 10, the dies 20, the bonding dies 30, the gap fill
structure 32, the TDVs 33, the RDL 34 and the conductive terminals
38. In some embodiments, one bonding die 30 is electrically
connected two or more dies 20, the number of the bonding dies 30 is
less than the number of the dies 20, but the disclosure is not
limited thereto. The bonding die 30 covers the top surfaces of at
least two adjacent dies 20 and a portion of the top surface of the
scribe region 21 between the dies 20. In some embodiments, the 3DIC
structure 100 includes four dies 20 and three bonding dies 30, but
the disclosure is not limited thereto. The 3DIC structure 100
includes at least two dies 20 and at least one bonding die 30, and
the number of the dies 20 and the bonding dies 30 are not limited
to that is shown in FIG. 1F.
[0065] The dies 20 of the 3DIC structure 100 include the same
substrate 10. In other words, the substrate 10 of the dies 20 is a
continuous substrate. The dies 20 are spaced from each other by the
scribe region 21, and are electrically connected to each other
through the bonding dies 30, the TDVs 33 and the RDL 34. The top
surface of the die 20 is covered by and in contact with the bonding
dies 30, the TDVs 33 and the gap fill structure 32. In some
embodiments, the die 20 may further be bonded to other die besides
the bonding die 30. The other die may be located between the TDV 33
and the bonding die 30. In the embodiments shown in FIG. 1F, each
die 20 has the TDV 33 formed thereon, but the disclosure is not
limited thereto. The number of the TDVs 33 may be adjusted
according the design of product. In some other embodiments, some of
the dies 20 have TDVs 33 formed thereon, and some other dies 20 do
not have TDVs 33 formed thereon.
[0066] The scribe region 21 is located between the dies 20, and the
upper portion UP of the scribe region 21 is covered by and bonded
to the bonding die 30. The structure of the scribe region 21 is
described as below.
[0067] FIG. 4A is a top view of the two dies 20 with a scribe
region 21 therebetween of the 3DIC structure 100 according to some
embodiments of the disclosure. FIG. 4B is a cross-sectional view
along a line A-A' of FIG. 4A.
[0068] Referring to FIG. 1F, FIG. 4A and FIG. 4B, in some
embodiments, the die 20 includes a seal ring SL on the edge of the
die 20 and surrounding the inner portion of the die 20. The seal
ring SL is located over the substrate 10 in the die region DR. In
some embodiments, the seal ring SL includes a plurality of
conductive lines and plugs connected to each other, and may be
formed simultaneously with the metal feature 13 of the interconnect
structure 14 of the die 20 (FIG. 2A), the seal ring SL is floated
and electrically isolated from the inner portion of the die 20. In
some embodiments, the seal ring SL may be located on an isolation
structure IS in the substrate 10 in the die region DR, but the
disclosure is not limited thereto. In some embodiments, the scribe
region 21 may also include an isolation structure or a doped region
formed in the substrate 10 thereof. The scribe region 21 is located
between the seal rings SL of the dies 20, and separates from the
inner portion of the die 20 by the seal ring SL or/and the
isolation structure IS or/and the doped region. In some
embodiments, the scribe region 21 includes the substrate 10 and
dielectric materials 60 on the substrate 10, wherein the substrate
10 may include an isolation therein. In some embodiments, the
scribe region 21 may include test keys TK or align marks AM formed
on the substrate 10 and in the dielectric materials 60. The test
keys TK and the align mark AM may include conductive materials. The
top surfaces of the test key TK or the align mark AM may be covered
by the dielectric material 60 or at a same level as the top surface
of the dielectric material 60.
[0069] FIGS. 3A to 3D are top views of a 3DIC structure formed from
a wafer according to some embodiments of the disclosure. FIGS. 3A
to 3D illustrate the 3DIC structure before the die saw process is
performed on the wafer. For the sake of brevity, only the dies, the
bonding dies and the scribe region are specifically shown in FIGS.
3A to 3D.
[0070] Referring to FIG. 3A, the wafer 50 includes a plurality of
dies 20 and 20' spaced from each other by the scribe region 21. In
some embodiments, the dies 20 and 20' are arranged in an array, but
the disclosure is not limited thereto. The wafer 50 includes a
first region R1 and a second region R2. The dies 20 are in the
first region R1, and the dies 20' are in the second region R2. The
first region R1 is a region in which the dies 20 are to be
electrically connected to each other. In some embodiments, the
first region R1 is a square or a rectangle region, but the
disclosure is not limited thereto. The first region R1 may be any
kind of shape. In an embodiments, an area of the first region R1 is
ultra large, such as 215.times.215 mm. The second region R2 is the
region of the wafer 50 other than the first region R1. In some
embodiments, the dies 20' in the second region R2 are closer to the
edge of the wafer 50 than the dies 20 in the first region R1.
[0071] In some embodiments, in the first region R1, the dies 20 are
arranged in rows along a first direction D1, and arranged in
columns along a second direction D2. The first direction D1 is
perpendicular to the second direction D2, for example. In some
embodiments, the dies 20 in different rows are substantially
aligned with each other in the second direction D2, the dies 20 in
different columns are substantially aligned with each other in the
first direction D1. That is to say, the dies 20 in the first region
R1 are configured as an array. However, the disclosure is not
limited thereto. In some embodiments, the number of the dies 20 in
each row arranged in the first direction D1 is the same as or
different from the number of the dies in each column arranged in
the second direction D2. In the embodiment shown in FIG. 3A, the
dies 20 are arranged as a 12.times.7 array, but the disclosure is
not limited thereto. The dies 20 may be arranged in any kind of
array or any kind of arrangement according to the design of
product.
[0072] The scribe region 21 is located between the dies 20 and 20'
to separate the dies 20 and 20' from each other. In some
embodiments, the scribe region 21 includes a plurality of scribe
regions 21a and a plurality of scribe regions 21b between the dies
20. The scribe region 21a is located between the dies 20 in
adjacent rows and extending from an end of the wafer 50 to an
opposite end of the wafer 50 along the first direction D1. The
scribe region 21a includes a plurality of first sections 21a'
laterally located between two adjacent dies 20 arranged in the
second direction D2. The scribe region 21b is located between the
dies 20 in adjacent columns and extending from an end of the wafer
50 to an opposite end of the wafer 50 along the second direction
D2. The scribe region 21b includes a plurality of second sections
21b' laterally located between the two dies arranged in the first
direction D1. The scribe regions 21a and the scribe regions 21b are
crossed with each other and meet at the cross points MP. The first
sections 21a' and the second sections 21b' are connected to each
other by the cross points MP, respectively. The cross point MP is
surrounded by four dies 20 arranged in an 2.times.2 array and
connected to first sections 21a' and the second sections 21b'
between the dies 20 in the 2.times.2 array.
[0073] The dies 20 in the first region R1 are electrically
connected to each other through the bonding dies 30. The dies 20
altogether serve as a large die (such as an ultra large die with an
area of 215.times.215 mm). In some embodiments, one bonding die 30
is electrically bonded to two adjacent dies 20 and across the
scribe region 21 between the two dies 20, but the disclosure is not
limited thereto.
[0074] In some embodiments, the bonding dies 30 on the scribe
regions 21a are aligned with each other in the first direction D1
and the second direction D2. The bonding dies 30 on the scribe
regions 21b are aligned with each other in the first direction D1
and in the second direction D2. The bonding dies 30 in the scribe
regions 21a and the bonding dies 30 in the scribe regions 21b are
staggered with each other. In other words, in some embodiments, the
bonding dies 30 are arranged in a plurality of rows along the first
direction D1, and in a plurality of columns along the second
direction D2. In some embodiments, the bonding dies 30 in adjacent
two rows are stagger with each other in the second direction D2.
Further, the bonding dies 30 in odd rows are aligned with each
other in the second direction D2. The bonding dies 30 in even rows
are aligned with each other in the second direction D2. The bonding
dies 30 in adjacent two columns are staggered with each other in
the first direction D1. Further, the bonding dies 30 in odd columns
are aligned with each other in the first direction D1. The bonding
dies 30 in even columns are aligned with each other in the first
direction D1. In some embodiments, the bonding dies 30 have the
same sizes, but the disclosure is not limited thereto. In some
other embodiments, the bonding dies 30 may have different
sizes.
[0075] In some embodiments, each of the first sections 21a' and
each of the second sections 21b' have bonding dies formed thereon,
and the cross points MP are not covered by the bonding die 30.
However, the disclosure is not limited thereto. In some other
embodiments, some of the first sections 21a' or some of the second
sections 21b' may be not crossed or covered by the bonding die 30,
as long as the dies 20 in the first region R1 is electrically
connected to each other. In alternative embodiments, the cross
point MP may be covered by the bonding die 30.
[0076] In some embodiments, in the first region R1 the number of
the bonding dies 30 may be less than, equal to or larger than the
number of the dies 20. In a same row or in a same column, the
number of the bonding die 30 is less than the number of the dies
20.
[0077] Still referring to FIG. 3A, in some embodiments, the top
view of the die 20 and the top view of the bonding die 30 may be
square, rectangle or the like, respectively. The length L1 of the
die 20 in the first direction D1 may be the same as or different
from the length L2 of the die 20 in the second direction D2. The
length L3 of the bonding die 30 may be the same as or different
from the length LA of the bonding die 30. The length L3 refers to a
length of the bonding die 30 in a direction perpendicular to the
extending direction of the underlying scribe region 21. The length
L4 refers to a length of the bonding die 30 in a direction parallel
to the extending direction of the underlying scribe region 21. The
length L3 of the bonding die 30 is larger than the distance S1
(that is, the width of the scribe region 21) between the two dies
20, and may be less than the length L1/L2 of the die 20. In some
embodiments, the area A1 of the top surface of the bonding die 30
is less than the area A2 of the top surface of the die 20. The
ratio between the area A1 to the area A2 ranges from 1/2 to 1/50,
for example.
[0078] Referring to FIG. 1F and FIG. 3A, in this embodiments, the
die saw process is performed on the scribe regions 21 between the
first region R1 and the second region R2, so as to form a 3DIC
structure 100a including the dies 20 electrically connected to each
other.
[0079] Referring to FIG. 3B, in some embodiments, the sizes of the
bonding dies 30 on different sections of the scribe region 21 may
be different from each other. For example, a 3DIC structure 100b
includes a plurality of bonding dies 30 and a plurality of bonding
dies 130. The bonding dies 30 are across the scribe regions 21a,
and the bonding dies 130 are across the scribe regions 21b. In some
embodiments, the size of the bonding die 30 is different from the
size of the bonding die 130.
[0080] The bonding die 130 has a length L30 and a length 40. The
length L30 is the length of the bonding die 130 in the direction D1
perpendicular to the extending direction D2 of the scribe region
21b. The length L40 is the length of the bonding die 130 in the
direction D2 parallel to the extending direction D2 of the scribe
region 21b. In some embodiments, the length L40 is larger than the
length L30. The bonding die 30 has a length L3 and a length LA
substantially the same as those described in FIG. 3A. In some
embodiments, the length L40 of the bonding die 130 is larger than
the length L4 of the bonding die 30. The length L30 of the bonding
die 130 may be substantially the same as or larger than the length
L3 of the bonding die 30. The area A10 of the top surface of the
bonding die 130 is larger than the area A1 of the top surface of
the bonding die 30.
[0081] In some embodiments, the bonding dies 130 on the scribe
regions 21b may have the same size or different sizes. The bonding
dies 30 on the scribe regions 21a may have the same size of
different sizes.
[0082] In some embodiments, the dies of the 3DIC structure may be
arranged in any kind of array, FIG. 3C and FIG. 3D are examples
illustrating dies arranged in different kind of array.
[0083] Referring to FIG. 3C, a 3DIC structure 100c including four
dies arranged in a 2.times.2 array is illustrated. A plurality of
3DIC structure 100c may be formed from the wafer 50. Before the
wafer is diced, the wafer 50 includes a plurality of first regions
R10 and a second region R20. Each first region R10 includes four
dies 20 arranged in a 2.times.2 array. The bonding dies 30 are
across the scribe region 21 in the first regions R10. During the
die saw process, the 3DIC structure 100c is separated from each
other by performing the die saw process on the scribe regions 21
between the first regions R10 and between the first region R10 and
the second region R20.
[0084] Referring to FIG. 3D, a 3DIC structure 100d includes nine
dies arranged in a 3.times.3 array is illustrated. A plurality of
3DIC structure 100d may be formed from the wafer 50. Before the
wafer 50 is diced, the wafer 50 includes a plurality of first
regions R100 and a second region R200. Each first region R100
includes nine dies 20 arranged in a 3.times.3 array. The bonding
dies 30 are across the scribe region 21 in the first regions R100.
During the die saw process, the 3DIC structure 100c is separated
from each other by performing the die saw process on the scribe
regions 21 between the first regions R100 and between the first
region R100 and the second region R200.
[0085] Referring to FIG. 3E, in some embodiments, a 3DIC structure
100e includes a plurality of dies 20 electrically bonded to the
bonding dies 230. Each bonding die 230 is bonded to four dies 20 in
a 2.times.2 array, across and covers the crisscross portions of the
scribe region 21. In detail, each of the bonding die 230 covers the
cross point MP and portions of the first sections 21a' and the
second sections 21b' connected to the cross point MP. The dies 20
shown in FIG. 3E are arranged in a 12.times.7 array, but the
disclosure is not limited thereto.
[0086] The array of the dies 20 arranged is not limited to those
shown in FIGS. 3A to 3E. The 3DIC structure may include dies
arranged in any kind of array or single row or single column, or
the like, as long as the dies in the 3DIC structure are
electrically connected to each other. In some embodiments, one or
more 3DIC structures is/are formed from one wafer, and the 3DIC
structures formed from the same wafer may include dies arranged in
the same type of arrangement (such as array) or different types of
arrangements.
[0087] In the embodiments of the disclosure, the dies in the 3DIC
structure are electrically connected to each other through the
bonding die. One bonding die is bonded to at least two dies by
hybrid bonding process and across the scribe region between the
dies. The bonding die includes metal interconnection comprising
metal lines with fine pitch. Therefore, the bonding dies may
provide local high density interconnect between the dies, and ultra
large die interconnection may be formed.
[0088] In some embodiments of the disclosure, a 3DIC structure
includes a first die and a second die on a substrate and a bonding
die. The boding die is electrically bonded to the first die and the
second die. The bonding die covers a portion of a top surface of a
scribe region between the first die and the second die.
[0089] In alternative embodiments of the disclosure, a 3DIC
structure includes a plurality of dies, a bonding die, a gap fill
structure and a RDL. The dies are located on a substrate and are
arranged in an array, wherein portions of the substrate are located
in scribe regions laterally between the plurality of dies. The
bonding die is across the scribe region and electrically bonded to
the plurality of dies. The gap fill structure is located on the
plurality of dies and on sides of the bonding die. The RDL is
located on the gap fill structure and electrically connected to the
plurality of the dies through a plurality of through dielectric
vias (TDVs). The plurality of dies are electrically connected to
each other through the bonding die, the TDVs, and the RDL.
[0090] In some embodiments of the disclosure, a method of
manufacturing a 3DIC structure includes the following steps. a
plurality of bonding dies are bonded to a plurality of dies in a
first region of a wafer. Each of the bonding dies is bonded to at
least two of the dies. A gap fill structure is formed on the wafer
and on sides of the bonding dies. A RDL is formed on the gap fill
structure. The plurality of dies are electrically connected to each
other through the RDL and the bonding dies. A die saw process is
performed on the wafer to separate the plurality of dies in the
first region from a second region other than the first region of
the wafer.
[0091] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the disclosure. Those skilled in the art should appreciate that
they may readily use the disclosure as a basis for designing or
modifying other processes and structures for carrying out the same
purposes and/or achieving the same advantages of the embodiments
introduced herein. Those skilled in the art should also realize
that such equivalent constructions do not depart from the spirit
and scope of the disclosure, and that they may make various
changes, substitutions, and alterations herein without departing
from the spirit and scope of the disclosure.
* * * * *