U.S. patent application number 15/983064 was filed with the patent office on 2019-11-21 for 3dic structure and method of manufacturing the same.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Co., Ltd.. The applicant listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Hsien-Wei Chen, Ming-Fa Chen, Sung-Feng Yeh.
Application Number | 20190355692 15/983064 |
Document ID | / |
Family ID | 68466607 |
Filed Date | 2019-11-21 |
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United States Patent
Application |
20190355692 |
Kind Code |
A1 |
Yeh; Sung-Feng ; et
al. |
November 21, 2019 |
3DIC STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Abstract
A 3DIC structure includes a die, a conductive terminal, and a
dielectric structure. The die is bonded to a carrier through a
bonding film. The conductive terminal is disposed over and
electrically connected to the die. The dielectric structure
comprises a first dielectric layer and a second dielectric layer.
The first dielectric layer is disposed laterally aside the die. The
second dielectric layer is disposed between the first dielectric
layer and the bonding film, and between the die and the boding
film. A second edge of the second dielectric layer is more flat
than a first edge of the first dielectric layer.
Inventors: |
Yeh; Sung-Feng; (Taipei
City, TW) ; Chen; Hsien-Wei; (Hsinchu City, TW)
; Chen; Ming-Fa; (Taichung City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsinchu |
|
TW |
|
|
Assignee: |
Taiwan Semiconductor Manufacturing
Co., Ltd.
Hsinchu
TW
|
Family ID: |
68466607 |
Appl. No.: |
15/983064 |
Filed: |
May 17, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 2225/06513
20130101; H01L 2224/18 20130101; H01L 2224/73259 20130101; H01L
23/49816 20130101; H01L 2224/32057 20130101; H01L 21/31056
20130101; H01L 23/481 20130101; H01L 24/19 20130101; H01L 2924/1815
20130101; H01L 24/13 20130101; H01L 24/33 20130101; H01L 25/0655
20130101; H01L 2224/0401 20130101; H01L 21/30625 20130101; H01L
2224/92224 20130101; H01L 21/2007 20130101; H01L 24/05 20130101;
H01L 21/31053 20130101; H01L 21/76898 20130101; H01L 25/50
20130101; H01L 23/5389 20130101; H01L 24/94 20130101; H01L
2224/04105 20130101; H01L 2224/02331 20130101; H01L 2224/13024
20130101; H01L 2224/05569 20130101; H01L 2924/18161 20130101; H01L
25/0657 20130101; H01L 2224/12105 20130101; H01L 2224/96 20130101;
H01L 24/20 20130101; H01L 23/3128 20130101; H01L 21/561 20130101;
H01L 2224/33051 20130101; H01L 2224/32221 20130101; H01L 24/32
20130101; H01L 2224/02372 20130101; H01L 23/3135 20130101 |
International
Class: |
H01L 23/00 20060101
H01L023/00; H01L 21/56 20060101 H01L021/56; H01L 21/768 20060101
H01L021/768; H01L 21/306 20060101 H01L021/306; H01L 21/3105
20060101 H01L021/3105; H01L 23/31 20060101 H01L023/31; H01L 23/48
20060101 H01L023/48; H01L 25/00 20060101 H01L025/00 |
Claims
1. A 3DIC structure, comprising: a die bonding to a carrier through
a bonding film; a conductive terminal disposed over and
electrically connected to the die, a dielectric structure
comprising: a first dielectric layer disposed laterally aside the
die; and a second dielectric layer disposed between the first
dielectric layer and the bonding film, and between the die and the
boding film, wherein a second edge of the second dielectric layer
is more flat than a first edge of the first dielectric layer,
wherein a first corner of the first dielectric layer comprises a
first rounding portion, a second corner of the second dielectric
layer comprises a second rounding portion; and a width of the
second rounding portion is less than a width of the first rounding
portion, a height of the second rounding portion is less than a
height of the first rounding portion.
2. (canceled)
3. The 3DIC structure of claim 1, wherein the width and the height
of the second rounding portion are zero, and the second corner is a
right angle.
4. The 3DIC structure of claim 1, wherein a length of the second
rounding portion is less than a length of the first rounding
portion.
5. The 3DIC structure of claim 1, wherein the first rounding
portion of the first dielectric layer is covered by the second
dielectric layer, and a portion of the second dielectric layer is
located laterally aside the first dielectric layer.
6. The 3DIC structure of claim 5, wherein a thickness of the second
dielectric layer on the first corner of the first dielectric layer
is larger than a thickness of the second dielectric layer on the
die.
7. The 3DIC structure of claim 1, wherein an interface is between
the first dielectric layer and the second dielectric layer; a
portion of the interface is coplanar with a surface of the die; and
an end portion of the interface is not coplanar with the surface of
the die, and is laterally aside the die.
8. The 3DIC structure of claim 1, wherein a ratio of a contact area
between the bonding film and the carrier to an area of the carrier
facing the bonding film ranges from 0.99 to 1.
9. The 3DIC structure of claim 1, wherein a corner of the die
comprises a third rounding portion, and a width of the third
rounding portion ranges from 0 to 0.4 .mu.m.
10. The 3DIC structure of claim 1, further comprising a
redistribution layer (RDL) structure between the die and the
conductive terminal.
11-20. (canceled)
21. A 3DIC structure, comprising: a die bonding to a carrier
through a bonding film; a conductive terminal disposed over and
electrically connected to the die, a dielectric structure
comprising: a first dielectric layer disposed laterally aside the
die; and a second dielectric layer disposed between the first
dielectric layer and the bonding film, and between the die and the
boding film, wherein a second edge of the second dielectric layer
is more flat than a first edge of the first dielectric layer,
wherein a ratio of a contact area between the bonding film and the
carrier to an area of the carrier facing the bonding film ranges
from 0.99 to 1.
22. The 3DIC structure of claim 21, wherein a first corner of the
first dielectric layer comprises a first rounding portion, a second
corner of the second dielectric layer comprises a second rounding
portion.
23. The 3DIC structure of claim 22, wherein a length of the second
rounding portion is less than a length of the first rounding
portion.
24. The 3DIC structure of claim 22, wherein the first rounding
portion of the first dielectric layer is covered by the second
dielectric layer, and a portion of the second dielectric layer is
located laterally aside the first dielectric layer.
25. The 3DIC structure of claim 21, wherein an interface is between
the first dielectric layer and the second dielectric layer; a
portion of the interface is coplanar with a surface of the die; and
an end portion of the interface is not coplanar with the surface of
the die, and is laterally aside the die.
26. A 3DIC structure, comprising: a die bonding to a carrier
through a bonding film; a conductive terminal disposed over and
electrically connected to the die, a dielectric structure
comprising: a first dielectric layer disposed laterally aside the
die; and a second dielectric layer disposed between the first
dielectric layer and the bonding film, and between the die and the
boding film, wherein a second edge of the second dielectric layer
is more flat than a first edge of the first dielectric layer,
wherein a corner of the die comprises a rounding portion, and a
width of the rounding portion ranges from 0 to 0.4 .mu.m.
27. The 3DIC structure of claim 26, wherein a first corner of the
first dielectric layer comprises a first rounding portion; and a
second corner of the second dielectric layer is a right angle.
28. The 3DIC structure of claim 27, wherein a thickness of the
second dielectric layer on the first corner of the first dielectric
layer is larger than a thickness of the second dielectric layer on
the die.
29. The 3DIC structure of claim 27, wherein the first rounding
portion of the first dielectric layer is covered by the second
dielectric layer, and a portion of the second dielectric layer is
located laterally aside the first dielectric layer.
30. The 3DIC structure of claim 26, wherein an interface is between
the first dielectric layer and the second dielectric layer; a
portion of the interface is coplanar with a surface of the die; and
an end portion of the interface is not coplanar with the surface of
the die, and is laterally aside the die.
Description
BACKGROUND
[0001] The semiconductor industry has experienced rapid growth due
to continuous improvements in the integration density of various
electronic components (i.e., transistors, diodes, resistors,
capacitors, etc.). For the most part, this improvement in
integration density has come from continuous reductions in minimum
feature size, which allows more of the smaller components to be
integrated into a given area. These smaller electronic components
also demand smaller packages that utilize less area than previous
packages. Some smaller types of packages for semiconductor
components include quad flat packages (QFPs), pin grid array (PGA)
packages, ball grid array (BGA) packages, flip chips (FC),
three-dimensional integrated circuits (3DICs), wafer level packages
(WLPs), and package on package (PoP) devices and so on.
[0002] 3DICs provide improved integration density and other
advantages, such as faster speeds and higher bandwidth, because of
the decreased length of interconnects between the stacked chips.
However, there are quite a few challenges to be handled for the
technology of 3DICs.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] FIG. 1A to FIG. 1E are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to a
first embodiment of the disclosure.
[0004] FIG. 2 is schematic cross-sectional view illustrating a 3DIC
structure according to some embodiments of the disclosure.
[0005] FIG. 3A to FIG. 3B are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to a
second embodiment.
[0006] FIGS. 4A to 4C are the top views illustrating a dielectric
material layer on dies and wafer according to some embodiments of
the disclosure.
[0007] FIG. 5A to FIG. 5N are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to a
third embodiment of the disclosure.
[0008] FIG. 6 and FIG. 7 are schematic cross-sectional view
illustrating a 3DIC structure according to some embodiments of the
disclosure.
[0009] FIG. 8A to FIG. 8C are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to some
embodiments of the disclosure.
[0010] FIG. 9 and FIG. 10 are schematic cross-sectional view
illustrating a 3DIC structure according to some embodiments of the
disclosure.
DETAILED DESCRIPTION
[0011] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a second
feature over or on a first feature in the description that follows
may include embodiments in which the second and first features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the second and first
features, such that the second and first features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0012] Further, spatially relative terms, such as "beneath",
"below", "lower", "on", "above", "upper" and the like, may be used
herein for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the FIG.s. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the FIG.s. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0013] Other features and processes may also be included. For
example, testing structures may be included to aid in the
verification testing of the 3D packaging or 3DIC devices. The
testing structures may include, for example, test pads formed in a
redistribution layer or on a substrate that allows the testing of
the 3D packaging or 3DIC, the use of probes and/or probe cards, and
the like. The verification testing may be performed on intermediate
structures as well as the final structure. Additionally, the
structures and methods disclosed herein may be used in conjunction
with testing methodologies that incorporate intermediate
verification of known good dies to increase the yield and decrease
costs.
[0014] FIG. 1A to FIG. 1E are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to a
first embodiment of the disclosure. FIG. 2 is schematic
cross-sectional view illustrating a 3DIC structure according to
some embodiments of the disclosure.
[0015] Referring to FIG. 1A, a wafer 18 including a plurality of
dies 16 is provided. The dies 16 may respectively be an
application-specific integrated circuit (ASIC) chip, an analog
chip, a sensor chip, a wireless and radio frequency chip, a voltage
regulator chip or a memory chips, for example. The dies 16 may be
the same types of dies or the different types of dies. The number
of the dies formed in the wafer 18 shown in FIG. 1A is merely for
illustration, and the disclosure is not limited thereto. In some
embodiments, the wafer 18 includes a plurality of dies arranged in
an array, and the number of the dies may be adjusted according to
the design of products. In some embodiments, the dies 16 may be
separated along scribe lines 17 by a die-saw process in subsequent
processes.
[0016] In some embodiments, the wafer 18 includes a substrate 10, a
plurality of pads 11, a dielectric layer 12 and a bonding structure
15. The substrate 10 is a semiconductor substrate such as a silicon
substrate. The substrate 10 is, for example, a bulk silicon
substrate, a doped silicon substrate, an undoped silicon substrate,
or a silicon-on-insulator (SOI) substrate. The dopant of the doped
silicon substrate may be an N-type dopant (such as phosphorus or
arsenic), a P-type dopant (such as boron) or a combination thereof.
The substrate 10 may also be formed by the other semiconductor
materials. The other semiconductor materials include but are not
limited to silicon germanium, silicon carbide, gallium arsenide, or
the like. The substrate 10 includes active areas and isolation
structures (not shown).
[0017] In some embodiments, the wafer 18 includes a plurality of
devices (not shown) formed on the substrate 10. The devices include
active components, passive components, or a combination thereof. In
some embodiments, the devices include integrated circuit devices,
for example. In some embodiments, the devices are, for example,
transistors, capacitors, resistors, diodes, photodiodes, fuse
devices, or other similar devices. However, the disclosure is not
limited thereto. In some other embodiments, the wafer 18 may be a
blank wafer without devices.
[0018] The pad 11 may be a part of an interconnect structure (not
shown) and electrically connected to the devices (not shown) formed
on the substrate 10. The pads 11 may be a top metal layer of the
interconnect structure or a conductive pad electrically connected
to the top metal layer of the interconnect structure. The pad 11
may include tungsten (W), copper (Cu), aluminum (Al), alloys
thereof, or a combination thereof.
[0019] The dielectric layer 12 is formed laterally aside the pads
11, covering sidewalls of the pads 11 and exposing top surfaces of
the pads 11. The dielectric layer 12 may include silicon oxide,
silicon nitride, silicon oxynitride, or a combination thereof. In
some embodiments, the top surface of dielectric layer 12 and the
top surface of the pads 11 are substantially coplanar with each
other.
[0020] In some embodiments, the bonding structure 15 is formed on
the pads 11 and the dielectric layer 12. The bonding structure 15
may include dielectric material, conductive material, or a
combination thereof. In some embodiments, the bonding structure 15
includes a dielectric layer 13 and a plurality of conductive
features 14. The conductive feature 14 may be conductive layer,
conductive bump, conductive pillar, or the like. The dielectric
layer 13 covers the top surface of the dielectric layer 12 and a
portion of the top surface of the pads 11. The dielectric layer 13
may include a single-layer structure or a multilayer structure. The
dielectric layer 13 includes oxide such as silicon oxide, nitride
such as silicon nitride, oxynitride such as silicon oxynitride,
undoped silicate glass (USG), tetraethyl orthosilicate (TEOS), or a
combination thereof. The material of the dielectric layer 13 may be
the same as or different from the material of the dielectric layer
12. The dielectric layer 13 may be formed by a suitable process
such as spin coating, chemical vapor deposition (CVD) or the
like.
[0021] The conductive feature 14 is formed in and penetrates
through the dielectric layer 13 to be electrically connected to the
pads 11. In some embodiments, the top surface of the conductive
feature 14 is substantially coplanar with the top surface of the
dielectric layer 13. The conductive feature 14 may be formed of
aluminum, copper, nickel, gold, silver, tungsten, TiN, or a
combination thereof and formed by electro-chemical plating process,
CVD, physical vapor deposition (PVD) or the like. The cross-section
shape of the conductive feature 14 may be square, rectangle,
trapezoid, T-shaped, or the like. In some embodiments, the
conductive feature 14 is a via formed in the dielectric layer 13.
In some embodiments, the conductive feature 14 is T-shaped and
includes a second via 14b on a first via 14a. The second via 14b
has a larger size than that of the first via 14a. The width of the
second via 14b is larger than the width of the first via 14a.
[0022] A plurality of dies 28 are bonded to the wafer 18 through a
bonding process. In some embodiments, the dies 28 are respectively
bonded to the dies 16 and are spaced from each other. The dies 28
and the dies 16 may be the same types of dies or the different
types of dies.
[0023] In some embodiments, the dies 28 are dies cut from a same
wafer or a plurality of wafers by die-saw processes. That is, the
dies 28 may be cut from a same wafer or different wafers. In some
embodiments, the number of the dies bonded to the wafer 18 is the
same as the number of the dies included in the wafer 18, but the
disclosure is not limited thereto. The sizes, the structures and
the types of the dies 28 may be the same as or different from each
other.
[0024] In some embodiments, the die 28 respectively includes a
substrate 19, a device layer 20, an interconnect structure 21, a
plurality of pads 22, a dielectric layer 23 and a bonding structure
26. The substrate 19 is, for example, a bulk silicon substrate, a
doped silicon substrate, an undoped silicon substrate, or a SOI
substrate. The dopant of the doped silicon substrate may be an
N-type dopant (such as phosphorus or arsenic), a P-type dopant
(such as boron) or a combination thereof. The substrate 19 may also
be formed by the other semiconductor materials. The other
semiconductor materials include but are not limited to silicon
germanium, silicon carbide, gallium arsenide, or the like. The
material of substrate 19 may be similar to, the same as or
different from that of the substrate 10.
[0025] The device layer 20 includes a wide variety of devices (not
shown) formed on active areas of the substrate 19. In some
embodiments, the devices include active components, passive
components, or a combination thereof. In some embodiments, the
devices include integrated circuit devices, for example. In some
embodiments, the devices are, for example, transistors, capacitors,
resistors, diodes, photodiodes, fuse devices, or other similar
devices.
[0026] The interconnect structure 21 is formed over the substrate
19 and the device layer 20. In some embodiments, the interconnect
structure 21 includes one or more dielectric layers and conductive
structures formed therein (not shown). The conductive structures
include multiple layers of contacts, conductive lines and vias, and
are electrically connected to the devices in the device layer
21.
[0027] In some embodiments, one or more through-silicon vias (TSVs)
27 are formed in the substrate 10 and are electrically connected to
the interconnect structure 21 and the devices in the device layer
20. In some embodiments, the TSV 27 includes a conductive via and a
liner (not shown) surrounding the surface of the conductive via.
The conductive via may include copper, copper alloys, aluminum,
aluminum alloys, Ta, TaN, Ti, TiN, CoW or combinations thereof. The
liner may include dielectric material, such as silicon oxide. In
some embodiments, the TSV 27 does not penetrate through the
substrate 10, and the top surface of the TSV 9 is still covered by
the substrate 19. In subsequent processes, the substrate 19 may be
thinned by a grinding or planarization process, so as to expose the
top surface of the TSV 27, and the TSV 27 may be connected to other
components.
[0028] The pads 22 are formed on the interconnect structure 21. The
pads 22 are electrically connected to the conductive structure in
the interconnect structure 21 to provide an external connection of
the devices in the device layer 20. The material of the pad 22 may
be the same as or different from that of the pad 11 of the wafer
18. In some embodiments, the pad 22 may include metal or metal
alloy, such as aluminum, copper, nickel, or alloys thereof.
[0029] The dielectric layer 23 is formed over the interconnect
structure 21 and aside the pads 22 to cover the sidewalls of the
pads 22. The material and the structural feature of the dielectric
layer 23 are similar to, the same as or different from those of the
dielectric layer 12 of the wafer 18, which are not described
again.
[0030] The bonding structure 26 is formed on the dielectric layer
23 and the pads 22. In some embodiments, the bonding structure 26
includes a dielectric layer 24 and a plurality of conductive
feature 25 in the dielectric layer 24. The materials and the
structures of the dielectric layer 24 and the conductive features
25 are similar to, the same as or different from those of the
dielectric layer 13 and the conductive features 14,
respectively.
[0031] In some embodiments, the dies 28 are bonded to the wafer 18
through a hybrid bonding process. The hybrid bonding involves at
least two types of bonding, including metal-to-metal bonding and
non-metal-to-non-metal bonding such as dielectric-to-dielectric
bonding. That is to say, the conductive features 14 and the
conductive features 25 are bonded by metal-to-metal bonding, the
dielectric layer 13 and the dielectric layer 24 are bonded by
dielectric-to-dielectric bonding. In other words, the bonding
structure 26 is bonded to the bonding structure 15, the bonding
structure 26 and the bonding structure 15 together form a bonding
structure 30 connecting the dies 28 to the wafer 18. In some
embodiments, the bonding structure 30 is a hybrid-bonding
structure. However, the disclosure is not limited thereto. In some
other embodiments, the dies 28 may be bonded to the wafer 18
through a fusion bonding structure or micro bumps.
[0032] Still referring to FIG. 1A, in some embodiments, a thinning
process may be performed on the dies 28, such that the dies 28 are
thinned. The thinning process includes a grinding process, a
polishing process or a CMP process, or a combination thereof. In
some embodiments, as shown in the enlarged view, the corner .alpha.
of the die 28 is slightly damaged and being rounded due to the
thinning process.
[0033] Thereafter, a dielectric material layer 33 is formed over
the wafer 18 and the dies 28. The dielectric material layer 33
covers the top surface of the wafer 18, the top surfaces and the
sidewalls of the dies 28, and fills in the gaps between the dies
28. In some embodiments, the dielectric material layer 33 is also
referred as a gap-fill dielectric layer. In some embodiments, the
material of the dielectric material layer 33 includes an inorganic
dielectric material, an organic dielectric material, or a
combination thereof. The inorganic dielectric material includes
oxide such as silicon oxide, nitride such as silicon nitride,
oxynitride such as silicon oxynitride, silicon carbonitride (SiCN),
silicon carbon oxide (SiCO), or a combination thereof. The organic
dielectric material includes polymer such as polybenzoxazole (PBO),
polyimide, benzocyclobutene (BCB), epoxy, a combination thereof, or
the like. The forming method of the dielectric material layer 33
includes a deposition process such as chemical vapor deposition
(CVD), plasma-enhanced chemical vapor deposition (PECVD), or the
like.
[0034] In some embodiments, the surface or the topography of the
dielectric material layer 33 is undulated. In some embodiments, the
topography of the dielectric material layer 33 is similar to or
conformal with the dies 28 on the wafer 18. In some embodiments,
the dielectric material layer 33 includes a body part 31 and a
plurality of protruding parts 32. The body part 31 is located on
the wafer 18 and laterally aside the dies 28, covering a portion of
the top surface of the wafer 18 and the sidewalls of the dies 28.
That is, the body part 31 is located in the gaps between the dies
28. The protruding parts 32 are located over the body part 31 and
on the dies 28, so as to cover the top surfaces of the dies 28 and
a portion of the top surface of the body part 31. The bottom width
W2 of the protruding part 32 is larger than the top width W1 of the
die 28. In other words, the corners .alpha. of the dies 28 are
covered by the dielectric material layer 33.
[0035] In some embodiments, the cross-section shape of the
protruding part 32 may be square, rectangle, trapezoid, or the
like. However, the disclosure is not limited thereto, the
cross-section shape of the protruding part 32 may be any other
shapes, as long as the top surfaces, the corners and the sidewalls
of the dies 28 are covered by the dielectric material layer 33.
[0036] Referring to FIG. 1B, a mask layer PR including a plurality
of openings OP1 is formed on the dielectric material layer 33. The
mask layer PR is a patterned photoresist, for example. The mask
layer PR may be formed by forming a photoresist on the dielectric
material layer 33, and exposure and development processes are then
performed on the photoresist. The mask layer PR covers the body
part 31, the sidewalls and portions of top surfaces of the
protruding part 32 of the dielectric material layer 33.
[0037] The openings OP of the mask layer PR expose portions of top
surfaces of the protruding part 32. The opening OP are located at
the corresponding position over the die 28. In some embodiments,
the width of the opening OP is less than the top width W1 of the
die 28.
[0038] Referring to FIG. 1B and FIG. 1C, a removal process is
performed with the mask layer PR as a mask to remove portions of
the protruding parts 32 of the dielectric material layer 33 on the
dies 28. The removal process is an etching process such as an
anisotropic etching process, an isotropic etching process, or a
combination thereof. In some embodiments, the etching process
includes a wet etching process, a dry etching process, or a
combination thereof. Thereafter, the mask layer PR is stripped by
an ashing process, for example. After the removal process is
performed, a dielectric material layer 33a including a plurality of
openings OP2 is formed. In some embodiments, the removal process is
stopped until the top surface of the die 28 is exposed, and the
openings OP2 expose portions of the top surfaces of the dies 28,
but the disclosure is not limited thereto. In some other
embodiments, the removal process is stopped before the top surface
of the die 28 is exposed, and the opening OP2 does not expose the
top surface of the die 28.
[0039] Referring to FIG. 1C, the dielectric material layer 33a
includes a body part 31 and a plurality of protrusions 32a. The
protrusion 32a is on the body part 31 and on the dies 28. The
protrusion 32a covers the top surface of the edges of the dies 28,
and protrudes laterally with respect to sidewalls of the die 28 in
a direction parallel with the top surface of the die 28 to cover a
portion of the top surface of the body part 31. In other words, the
dielectric material layer 33a covers the sidewalls and top surfaces
of the edges of the dies 28. In other words, the corners .alpha. of
the dies 28 are covered by the dielectric material layer 33a. In
some embodiments, the cross-section shape of the protrusion 32a is
tooth-shaped, triangle, arc-shaped, sector, or the like, for
example. In some embodiments, as shown in FIG. 1C, the inner
sidewall of the protrusion 32a is straight, and the outer sidewall
of the protrusion 32a is arced or inclined. The inner sidewall of
the protrusion 32a is located on the dies 28, and the outer
sidewall is located on the body part 31. However, the disclosure is
not limited thereto, in some other embodiments, each of the inner
sidewall and the outer sidewall of the protrusion 32a may be
straight or inclined.
[0040] FIG. 4A is a top view of the structure shown in FIG. 1C, and
FIG. 1C is a cross-sectional view along line A-A' of FIG. 4A.
[0041] Referring to FIG. 1C and FIG. 4A, in some embodiments, a
plurality of dies 28 are bonded to the wafer 18. The dies 28 are
spaced from each other and arranged in an array on the wafer 18.
The dielectric material layer 33a is located on the dies 28 and
fills into the gap between the dies 28, covering the edges and
sidewalls of the dies 28, such that corners .alpha. of the dies 28
are covered by the dielectric material layer 33a.
[0042] In some embodiments, the top view of the die 28 is square,
rectangle, or the like, but the disclosure is not limited thereto.
The die 28 includes corners .alpha. and includes an edge region ER
and a non-edge region NR. The edge region ER is ring-shaped and
surrounding the non-edge region NR.
[0043] The dielectric material layer 33a covers the edge region ER
and the corners .alpha. of the die 28, and the opening OP2 of the
dielectric material layer 33a expose the non-edge region NR of the
die 28. In some embodiments, when viewed in top view, the opening
OP2 is located within region of the die 28. That is to say, the
opening OP2 is overlapped with the die 28. In some embodiments, the
shape of the opening OP2 is similar to, the same as or different
from the shape of the die 28, and the area of the opening OP2 is
less than the area of the die 28. In some embodiments, the ratio of
the area of the opening OP2 to the area of the die 28 ranges from
70% to 90%. In some embodiments, the width W3 of the edge region ER
covered by the dielectric material layer 33a ranges from 10 .mu.m
to 500 .mu.m. The ratio of the width W3 of the edge region ER to
the top width W1 of the die 28 range from 10% to 30%.
[0044] Referring to FIG. 1C and FIG. 1D, thereafter, a
planarization process is performed to planarize the top surface of
the dielectric material layer 33a and the top surfaces of the dies
28, so that a dielectric layer 33b is formed. In some embodiments,
the protrusions 32a and a portion of the body part 31 of the
dielectric material layer 33a, portions of the dies 28 are removed
by the planarization process. The planarization process includes a
chemical mechanical polishing (CMP) process, for example. In some
embodiments, the slurry used in the CMP process has a selectivity
ratio of the dielectric material layer 33a to the substrate 19 of
the die 28. In some embodiments, the selectivity ratio of the
dielectric material layer 33a to the substrate 19 ranges from 1:1
to 1:3 during the CMP process. In the embodiment, as a portion of
the dielectric material layer 33a is removed before the CMP process
is performed, the time and cost of the CMP process is reduced.
[0045] Referring to FIG. 1D, the dielectric layer 33b is formed
laterally aside the dies 28 to cover sidewalls of the dies 28. In
some embodiments, the top surface of the dielectric layer 33b is
substantially coplanar with the top surfaces of the dies 28. In
some embodiments, the die 28 may be thinned during the
planarization process. In some embodiments, a portion of the
substrate 19 of the die 28 is removed, and the TSVs 27 of the die
28 are exposed.
[0046] In the embodiments, as the corners .alpha. is covered and
protected by the dielectric material layer 33a during the
planarization process, the corner rounding issue of the die 28 is
avoided or reduced. In some embodiments, after the planarization
process is performed, the corner .alpha. of the die 28 is partially
removed or completely removed, and corners .beta. of the die 28 are
formed. In some embodiments, the corner .beta. of the die 28 is
90.degree.. In some embodiments, the corner .beta. includes a
rounding portion 34. The width W3 of the rounding portion 34 is
less than 0.4 .mu.m, the height H of the rounding portion 34 is
less than 0.2 .mu.m, for example. The rounding portion 34 is
connected to the top surface and the sidewall of the die 28. The
outer profile of the rounding portion 34 is arced, curved,
inclined, or the like.
[0047] Referring to FIG. 1E, a RDL structure 50 is formed on the
dies 28 and the dielectric layer 33b. The RDL structure 50 is
electrically connected to the dies 28 and the wafer 18. In some
embodiments, the RDL structure 50 is formed at back sides of the
dies 28 and referred to as a "back-side redistribution layer
structure", through the specification, wherein the "back-side"
refers to a side opposite to a "front-side" which is close to the
pads 22 of the die 28.
[0048] In some embodiments, the RDL structure 50 includes a
plurality of polymer layers PM1, PM2, PM3 and a plurality of
redistribution layers RDL1, RDL2, RDL3 stacked alternately. The
number of the polymer layers or the redistribution layers shown in
FIG. 1E is merely for illustration, and the disclosure is not
limited thereto. The redistribution layer RDL1 penetrates through
the polymer layer PM1 and is electrically connected to the TSVs 27
of the die 28. The redistribution layer RDL2 penetrates through the
polymer layer PM2 and is electrically connected to the
redistribution layer RDL1. The redistribution layer RDL3 penetrates
through the polymer layer PM3 and is electrically connected to the
redistribution layer RDL2. In some embodiments, each of the polymer
layers PM1, PM2 and PM3 includes a photo-sensitive material such as
PBO, PI, BCB, a combination thereof or the like. In some
embodiments, each of the redistribution layers RDL1, RDL2 and RDL3
includes conductive materials. The conductive materials include
metal such as copper, nickel, titanium, a combination thereof or
the like, and is formed by an electroplating process. In some
embodiments, the redistribution layers RDL1, RDL2 and RDL3
respectively includes a seed layer (not shown) and a metal layer
formed thereon (not shown). The seed layer may be a metal seed
layer such as a copper seed layer. The metal layer may be copper or
other suitable metals.
[0049] In some embodiments, the redistribution layers RDL1, RDL2
and RDL3 respectively includes a plurality of vias V and a
plurality of traces T connected to each other. The vias V penetrate
through the polymer layers PM1, PM2, PM3 to connect the traces T of
the redistribution layers RDL1, RDL1, RDL3, and the traces T are
respectively located on the polymer layers PM1, PM2, PM3, and are
respectively extending on the top surface of the polymer layers
PM1, PM2, PM3.
[0050] In some embodiments, the redistribution layer RDL3 is the
topmost redistribution layer of the RDL structure 50, and is
referred as an under-ball metallurgy (UBM) layer for ball mounting.
A plurality of connectors 51 are formed on the redistribution layer
RDL3 of the RDL structure 50. In some embodiments, the connectors
51 are referred as conductive terminals. The connectors 51 are
electrically connected to the die 28 through the RDL structure 50.
In some embodiments, the connectors 51 are made of a conductive
material with low resistivity, such as Sn, Pb, Ag, Cu, Ni, Bi or an
alloy thereof, and are formed by a suitable process such as ball
placement process and reflow process, evaporation, plating, or
screen printing. In alternative embodiments, the connectors 51 may
be controlled collapse chip connection (i.e. C4) bumps formed by a
C4 process.
[0051] Referring to FIG. 1E, a 3DIC structure 100a is thus
completed, the 3DIC structure 100a includes the wafer 18, the dies
28, the dielectric layer 33b, the RDL structures 50 and the
connectors 51. The dies 28 are electrically bonded to the wafer 18
by a hybrid bonding structure 30. The connectors 51 are
electrically connected to the dies 28 and the wafer 18 through the
RDL structure 50.
[0052] In the first embodiment, one layer of the dies 28 are bonded
to the wafer 18, but the disclosure is not limited thereto. In some
other embodiments, more than one layer of dies are bonded to the
wafer 18, and the number of the layers of dies may be adjusted
according to the product design. Herein, the number of the layers
of dies refers to the number of the dies stacked on the wafer in a
direction perpendicular to the top surface of the wafer.
[0053] Referring to FIG. 1D and FIG. 2, in some other embodiments,
a 3DIC structure 100b may include two layers of dies 28 and 128
stacked on the wafer 18. In some embodiments, after the
planarization process is performed, processes similar to FIG. 1A to
FIG. 1D are performed, such that the dies 128 are stacked on the
dies 28 and the wafer 18, and the dielectric layer 37 covering
sidewalls of the dies 128 is formed on the dielectric layer 33b. In
some embodiments, the dies 128 may be the same types of dies or
different types of dies, the dies 128 and the dies 28 may be the
same types of dies or different types of dies. The structure of the
die 128 may be the same as or different from those of the die 28.
The dies 128 are bonded to the dies 28 through a hybrid bonding
process, for example. It is mentioned that, the location of the
TSVs 27 in the die 28 is not limited to that is shown in FIG. 1A to
FIG. 1E, and may be adjusted according to the product design as
shown in FIG. 2.
[0054] In some embodiments, similar to the die 28, the die 128
includes a substrate 119 with TSVs 127 therein, a device layer 120,
an interconnect structure 121, a plurality of pads 122, a
dielectric layer 123 and a bonding structure 126 including a
dielectric layer 124 and a conductive feature 125. The bonding
structure 126 is bonded to the top surface (that is, the back
surface) of the die 28. In detail, the conductive feature 125 is
bonded to the TSVs 27 of the die 28, the dielectric layer 124 is
bonded to the substrate 19 of the die 28. In other words, the die
128 and the die 28 are configured as face to end, but the
disclosure is not limited thereto. In some other embodiments, the
die 128 and the die 28 may be configured as face to face (not
shown).
[0055] After the dies 128 are bonded to the dies 28 and the
dielectric layer 37 is formed, processes described in FIG. 1E are
performed to form the RDL structure 50 and the connectors 51, and
the 3DIC structure 100b is thus completed.
[0056] The 3DIC structure 100b includes the wafer 18, the dies 28,
the dies 128, the dielectric layer 33b, the dielectric layer 37,
the RDL structure 50 and the connectors 51. The connectors 51 are
electrically connected to the dies 128, the dies 28 and the wafer
18.
[0057] In the first embodiments, protrusions of the dielectric
material layer are formed on each of the dies bonded on the wafer,
but the disclosure is not limited thereto. In some embodiments,
protrusions may be formed on edge region of the dies on a region of
the wafer in which the likelihood of the occurrence of rounding
corner issue is high, and not formed on the dies on a region in
which the likelihood of the occurrence of rounding corner issue is
low.
[0058] FIG. 3A to FIG. 3B illustrate a method of forming a 3DIC
structure according to a second embodiment. The second embodiment
is similar to the first embodiment, except that the locations of
the openings of the mask layers in the two embodiments are
different.
[0059] Referring to FIG. 3A, after the dies 28 are bonded to the
wafer 18, a dielectric material layer 133 is formed on the dies 28
and the wafer 18. The material and the structural feature of the
dielectric material layer 133 may be the same as or different from
those of the dielectric material layer 33 (FIG. 1A), and is not
described again. The dielectric material layer 133 covers the top
surface of the wafer 18, the sidewalls and top surfaces of the dies
28.
[0060] A mask layer PR' including at least one openings OP1' is
formed on the dielectric material layer 133, the material and the
forming method of the mask layer PR' is substantially the same as
those of the mask layer PR in the first embodiment, the difference
lies in that, the opening OP1' of the mask layer PR' exposes the
dielectric material layer 133 covering at least two dies 28. That
is, the opening OP1' is located within the region of at least two
dies 28, and overlapped with at least two dies 28.
[0061] Referring to FIG. 3B, a removal process is performed to
remove a portion of the dielectric material layer 133 on the dies
28, and a dielectric material layer 133a including a recess RS is
formed. The removal process is an etching process such as an
anisotropic etching process, an isotropic etching process, or a
combination thereof. In some embodiments, the etching process
includes a wet etching process, a dry etching process, or a
combination thereof. In some embodiments, the removal process is
stopped until the top surfaces of the dies 28 are exposed. That is,
the recess RS exposes the top surfaces of at least two adjacent
dies 28, but the disclosure is not limited thereto. In some other
embodiments, the removal process is stopped before the top surfaces
of the dies 28 are exposed. That is, the recess RS is located over
the dies 28, but not expose the top surfaces of the dies 28. In
some embodiments, the recess RS is overlapped with at least two
dies 28.
[0062] FIGS. 4B and 4C are the top views illustrating the
dielectric material layer 133a on the dies 28 and the wafer 18
according to some embodiments of the disclosure. It is noted that,
the two dies 28 shown in FIGS. 3A and 3B may be referred to any two
dies on the wafer 18. In some embodiments, FIG. 3B is a
cross-sectional view taken along a B-B' line of FIG. 4B, for
example. In some embodiments, the two dies 28 shown in FIGS. 3A and
3B may be two dies on edge of the wafer 18, other dies may be
arranged between the two dies 28, and are not shown for the sake of
brevity.
[0063] Referring to FIG. 3B and FIG. 4B, in some embodiments, the
dielectric material layer 133a includes one or more protrusions
132a surrounding the one or more recesses RS. In some embodiments,
the recess RS is located over and overlapped with at least two
adjacent dies 28, the protrusion 132a is surrounding the recess RS
and covering the portions of the edge regions of the dies 28.
[0064] Referring to FIG. 4B, illustrated is an example showing the
recess RS at the corresponding position over four dies 28 arranged
in a 2.times.2 array. The protrusion 132a is located on portions of
edge regions ER of the four dies 28. In other words, each recess RS
is located over and overlapped with the four dies 28 in 2.times.2
array.
[0065] Referring to FIG. 3B and FIG. 4C, in some embodiments, the
recess RS is located over and overlapped with a plurality of dies
28, the recess RS is formed over the non-edge region of the wafer
18, and the protrusion 132 covers at least portions of corners of
the dies 28 on an edge region of the wafer 18. The protrusion 132
may have a shape similar to the shape of the wafer 18 and a smaller
area than that of the wafer 18 when viewed in the top view.
[0066] The locations of the recess RS and the protrusion 132a shown
in the figures are just for illustration, and the disclosure is not
limited thereto. The recess RS may be over the dies 28 arranged in
any kind of arrangement, as long as the protrusions 132 cover at
least portions of edges of the dies 28, and the corner rounding
issue of the dies 28 are avoided or reduced in subsequent
processes.
[0067] After the recess RS is performed, processes similar to those
described in FIGS. 1D and 1E are performed, and the 3DIC structure
100a or 100b may be further formed.
[0068] In the forgoing embodiments, the RDL structure is formed on
a back side of the die, but the disclosure is not limited thereto.
In some other embodiments, the RDL structure may be formed on a
front side of the die, which is described as below.
[0069] FIG. 5A to FIG. 5N are schematic cross-sectional views
illustrating a method of forming a 3DIC structure according to a
third embodiment of the disclosure.
[0070] Referring to FIG. 5A, similar to the first embodiment, a die
28 is bonded to a wafer 18 through a bonding structure 30. In some
embodiments, the bonding structure 30 is a hybrid bonding
structure, but the disclosure is not limited thereto. For the sake
of brevity, one die 28 is shown in FIG. 5A. It is understood that
the number of the die 28 bonded to the wafer 18 shown in FIG. 5A is
merely for illustration, and the disclosure is not limited thereto.
In some embodiments, the height H1 of the die 28 ranges from 30
.mu.m to 775 .mu.m. The structures of the die 28 and the wafer 18
may be substantially the same as or different from those described
in the first embodiment. In some embodiments, the die 28 does not
include TSVs. As shown in FIG. 5A, the cross-section shapes of the
conductive features 14 and 25 comprised in the bonding structures
15 and 26 of the wafer 18 and the die 28 are not T-shaped, and may
be rectangle or square.
[0071] In some embodiments, the wafer 18 may further includes a
stop layer 39 formed on the substrate 10. The stop layer 39 may be
formed between the substrate 10 and pads 11 and the dielectric
layer 12. In some embodiments, the material of the stop layer 39 is
different from the material of the dielectric layer 12. The stop
layer 39 includes silicon oxide, silicon nitride, silicon
oxynitride, or a combination thereof, for example. The stop layer
39 may be formed by a suitable technique such as CVD, spin coating,
or the like. In some embodiments, the wafer 18 may not include
devices therein, and may include an interconnect structure on the
substrate 10. For the sake of brevity, the interconnect structure
is not specifically shown. The pads 11 and the dielectric layer 12
may be referred as a part of the interconnect structure.
[0072] Referring to FIG. 5B, in some embodiments, after the die 28
is bonded to the wafer 18, a thinning process is performed to
remove a portion of the substrate 19 of the die 28, such that the
die 28 is thinned. The thinning process includes a grinding
process, a CMP process, or a combination thereof. In some
embodiments, after the thinning process is performed, the height H2
of the die 28 ranges from 5 .mu.m to 50 .mu.m.
[0073] Referring to FIGS. 5C to 5E, processes similar to those from
FIG. 1A to FIG. 1D are performed, such that a dielectric layer (or
referred as a first dielectric layer) 33b is formed on the wafer 18
and laterally aside the die 28.
[0074] Referring to FIG. 5C, a dielectric material layer 33 is
formed on the wafer 18 and the dies 18. The material, the forming
method and the structural features of the dielectric material layer
33 may be substantially the same as or different from those in the
first embodiment, and are not described again.
[0075] Referring to FIG. 5D and FIG. 5E, one or more openings or
recesses 36 are formed in the dielectric material layer 33. A
planarization process is then performed to remove a portion of the
dielectric material layer 33a, and the dielectric layer 33b is
formed to cover the sidewalls of the die 28. In some embodiment,
the top surface of the die 28 and the top surface of the dielectric
layer 33b are substantially coplanar with each other. In some
embodiments, the die 28 is further thinned, that is, a portion of
the substrate 19 of the die 28 is removed during the planarization
process, but the disclosure is not limited thereto. In some other
embodiments, the die 28 is not thinned during the planarization
process.
[0076] Referring to FIG. 5E, in some embodiments, after the
planarization process is preformed, the edge of the dielectric
layer 33b on edge of the wafer 18 may be rounded. That is to say,
the corner .theta.1 of the dielectric layer 33b may include a
rounding portion and may be referred as a rounding corner .theta.1.
The rounding corner .theta.1 is connected to the top surface and
sidewall of the dielectric layer 33b. The profile of the rounding
corner .theta.1 is arced, curved, rounded, or the like. The width
W4 of the rounding corner .theta.1 in a direction parallel with the
top surface of the die 28 ranges from 1 mm to 20 mm, the height H4
of the rounding corner .theta.1 in a direction perpendicular to the
top surface of the die 28 ranges from 5 .mu.m to 30 .mu.m, for
example.
[0077] Referring to FIG. 5F, a dielectric material layer 40 is
formed on the die 28 and the dielectric layer 33b to cover the top
surfaces of the die 28 and the dielectric layer 33b. The material
and the forming method of the dielectric material layer 40 are
similar to, the same as or different from those of the dielectric
material layer 33. In some embodiments, the outer profile of the
dielectric material layer 40 is conformal with outer profile of the
dielectric layer 33b and the die 28. In the embodiments in which
the dielectric layer 33b has a rounding corner .theta.1, the
dielectric material layer 40 also has a rounding corner .theta.2
over the rounding corner .theta.1 of the dielectric layer 33b and
over the edge of the wafer 18. The rounding corner .theta.2 is
connected to the top surface and sidewall of the dielectric
material layer 40. In some embodiments, the width W5 of the
rounding corner .theta.2 ranges from 1 mm to 20 mm, the height H5
of the rounding corner .theta.2 ranges from 5 .mu.m to 30 .mu.m,
for example. The width W5 and the height H5 of the rounding corner
.theta.2 may be the same as or different form the width W4 and the
height H4 of the rounding corner .theta.1, respectively. The
thickness T5 of the dielectric material layer 40 on the die 28 is
larger than or at least equal to the height H5 of the rounding
corner .theta.2.
[0078] Referring to FIG. 5G and FIG. 5H, a portion of the
dielectric material layer 40 is removed by photolithography and
etching processes. In detail, a mask layer 41 is formed on the
dielectric material layer 40. The mask layer 41 is, for example, a
photoresist. Thereafter, the mask layer 41 is patterned by exposure
and development processes, and a patterned mask 41a having an
opening 42 is formed. The patterned mask 41a covers a portion of
the dielectric material layer 40 on edge of the wafer 18. In some
embodiments, the patterned mask 41a covers the rounding corner
.theta.2 of the dielectric material layer 40 over the edge of the
wafer 18, and exposes the dielectric material layer 40 on the
non-edge region of the wafer 18.
[0079] Thereafter, a removal process such as an etching process
with the patterned mask 41a as a mask is performed, so as to remove
a portion of the dielectric material layer 40 exposed by the
opening 42 of the patterned mask 41a, and a recess 43 is formed in
the dielectric material layer 40. In some embodiments, after the
removal process is performed, the top surface of the die 28 is
still covered by the dielectric material layer 40. In some
embodiments, the rounding corner .theta.2 is remained.
[0080] Referring to FIG. 5I, the patterned mask 41a is then
stripped. The dielectric material layer 40 has a recess 43, and a
portion of the dielectric material layer 40 on edge of the wafer 18
is protruding from the bottom surface of the recess 43. In other
words, the dielectric material layer 40 includes a lower portion
44a and a protruding portion 44b on the lower portion 44a. The
lower portion 44a is located on the die 28 and the dielectric layer
33b. The protruding portion 44b is on the edge of the lower portion
44a and the edge of the wafer 18. The recess 43 is in a region
enclosed by the sidewall of the protruding portion 44b. In other
words, the recess 43 is defined by a top surface of the lower
portion 44a and sidewalls of the protruding portion 44b of the
second dielectric material layer 40. In some embodiments, the
cross-section shape of the protruding portion 44b is sector,
triangle, teeth-shaped, or the like. The inner sidewall of the
protruding portion 44b may be straight or inclined, the outer
sidewall of the protruding portion 44b may be rounding, arced or
inclined.
[0081] The width W6 and the height H6 (that is, the depth of the
recess 43) of the protruding portion 44b are substantially the same
as or different form the width W5 and the height H5 of the rounding
corner .theta.2 of the dielectric material layer 40, respectively.
In some embodiments, the width W6 of the protruding portion 44b is
larger than or equal to the width W5 of the rounding corner
.theta.2, or/and the height H6 of the protruding portion 44b is
larger than or equal to the height H5 of the rounding corner
.theta.2.
[0082] Referring to FIG. 5I and FIG. 5J, a planarization process
such as a CMP process is performed on the dielectric material layer
40, so as to form a dielectric layer (or referred as a second
dielectric layer) 40a with substantially flat top surface. In some
embodiments, the protruding portion 44b and a portion of the lower
portion 44a of the dielectric material layer 40 are removed by the
planarization process, but the disclosure is not limited thereto.
In some other embodiments, the lower portion 44a is not removed
during the planarization process. The thickness T6 of the
dielectric layer 40a on the die 28 ranges from 0 to 5 .mu.m, for
example. In the embodiments, as a portion of the second dielectric
material layer 40 is removed before the planarization process is
performed, the cost and time of the planarization process is
reduced.
[0083] Referring to FIG. 5J, as an etching process is previously
performed to form the protruding portion 44b on edge of the wafer
18 before the planarization process is performed, the rounding
issue may occur due to the planarization process is avoided or
reduced. In some embodiments, the corner .theta.3 of the dielectric
layer 40a is a right angle. In some other embodiments, a portion of
the corner .theta.3 of the dielectric layer 40a is slightly
rounded, and the corner .theta.3 includes a rounding portion RP.
The rounding portion RP refers to the portion of the corner
.theta.3 connected to the top surface and the sidewall of the
second dielectric layer 40a and not parallel with or perpendicular
to the top surface and the sidewall of the second dielectric layer
40a. In some embodiments, the rounding portion RP is arced, curved
or inclined.
[0084] In some embodiments, the width W7 of the rounding portion RP
of the second dielectric layer 40a is less than the width W4 of the
rounding corner .theta.1 of the first dielectric layer 33b. The
height H7 of the rounding portion RP is less than the height H4 of
the rounding corner .theta.1. The width W7 of the rounding portion
RP in a direction parallel with the top surface of the die 28
ranges from 0 to 10 .mu.m, the height H7 of the rounding portion RP
in a direction perpendicular to the top surface of the die 28
ranges from 0 to 5 .mu.m. In other word, a length of the surface of
the rounding portion RP of the second dielectric layer 40b is less
than a length of the surface of the rounding corner .theta.1 of the
first dielectric layer 33b. In some embodiments, the length of the
surface of the rounding portion RP is zero. That is, the corner
.theta.3 does not include the rounding portion and is a right
angle. In other words, the edge of the second dielectric layer 40a
is more flatten than the edge of the first dielectric layer.
[0085] In some embodiments, the second dielectric layer 40a covers
the rounding corner .theta.1 of the first dielectric layer 33b. A
portion of the second dielectric layer 40a on edge of the wafer 18
is laterally aside the first dielectric layer 33b and aside the die
28. In other words, the thickness of the second dielectric layer
40a on edge of the wafer 18 covering the rounding corner .theta.1
of the first dielectric layer 33b is larger than the thickness T6
of the second dielectric layer 40a on the die 28.
[0086] The dielectric layer 40a and the dielectric layer 33b form a
dielectric structure 45. The dielectric structure 45 covers the top
surface of the wafer 18, the sidewalls and the top surface of the
die 28. An interface 46 is existed between the dielectric layer 40a
and the dielectric layer 33b. In some embodiments, a portion of the
interface 46 is extending along a direction parallel with the top
surface of the die 28 or the wafer 18, and the end portion of the
interface 46 is not parallel with the top surface of the die 28 or
the wafer 18. In some embodiments, a portion of the interface 46 is
substantially coplanar with the top surface of the die 28. The end
portion of the interface 46 is arced, curved or inclined, and
located at a level lower than that of the top surface of the die
28.
[0087] In some embodiments, the top surface (that is, back surface)
of the die 28 is covered by the dielectric structure 45, that is,
the top surface of the die 28 is lower than the top surface of the
dielectric structure 45, but the disclosure is not limited thereto.
In some embodiments, the planarization process may be performed
until the top surface of the die 28 is exposed, and the top surface
of the die 28 may be substantially coplanar with the top surface of
the dielectric structure 45.
[0088] Referring to FIG. 5K, a bonding film 48 is formed on the
dielectric structure 45, the bonding film 48 may include a
dielectric material, a conductive material, or a combination
thereof. The dielectric material includes silicon oxide, silicon
nitride, silicon oxynitride, undoped silicate glass (USG),
tetraethyl orthosilicate (TEOS), or a combination thereof. The
conductive material includes aluminum, copper, nickel, gold,
silver, tungsten, alloys thereof, or a combination thereof. The
bonding film 48 is formed by a deposition process, electroplating
process, or a combination thereof.
[0089] In some embodiments, the bonding film 48 is conformal with
the dielectric structure 45, as the dielectric structure 45 has a
substantially flat top surface, the bonding film 48 also has a
substantially flat top surface. In some embodiments in which the
corner .theta.3 of the second dielectric layer 40a includes a
rounding portion, the corner of the bonding film may also be slight
rounded and include a rounding portion. In some embodiments, after
the bonding film 48 is formed, a planarization process such as a
CMP process is further performed to further planarize the top
surface of the bonding film 48, but the disclosure is not limited
thereto. In some other embodiments, the CMP process may be
omitted.
[0090] Referring to FIG. 5L, a carrier 49 is bonded to the bonding
film 48 through, for example, a hybrid bonding process, a fusion
bonding process, or a combination thereof. In some embodiments, the
carrier 49 includes dielectric material, conductive material,
semiconductor material, or a combination thereof. The dielectric
material and the conductive material are substantially the same as
or different from those included in the bonding film 48. The
semiconductor material is, for example, silicon. In some
embodiments, the carrier 49 is a blank wafer without device
therein, but the disclosure is not limited thereto. In some other
embodiments, the carrier 49 is a wafer with devices therein. The
devices may be the same as or different from those may be included
in the wafer 18 described in FIG. 1A.
[0091] In the embodiments, as the bonding film 48 has a
substantially flat top surface, and the corner of the bonding film
48 is not rounded or slightly rounded, the adhesion between the
bonding film 48 and the carrier 49 is improved. In some
embodiments, the top surface of the bonding film 48 and the bottom
surface of the carrier 49 are completely in contact with each
other. In some embodiments, the contact area between the bonding
film 48 and the carrier 49 is substantially equal to the area of
the bottom surface of the carrier 49 (that is, the surface of the
carrier 49 facing and contacting with the bonding film 48). In some
embodiments, the ratio between the contact area between the bonding
film 48 and the carrier 49 to the area of the bottom surface of the
carrier 49 ranges from 0.99 to 1.
[0092] In some embodiments, the structure formed as shown in FIG.
5L may be referred as a 3DIC structure 80a.
[0093] Referring to FIG. 5M, the 3DIC structure 80a is turned over,
a portion of the wafer 18 is removed by a removal process such as a
grinding process, a polishing process, or the like, or a
combination thereof. In some embodiments, the removal process is
performed until the stop layer 39 is removed and the pads 11 of the
wafer 18 are exposed.
[0094] Referring to FIG. 5N, a RDL structure 50 is formed on and
electrically connected to the dies 28. In some embodiments, the RDL
structure 50 includes a plurality of polymer layers PM1, PM2, PM3
and a plurality of redistribution layers RDL1, RDL2, RDL3 stacked
alternately. The number of the polymer layers or the redistribution
layers shown in FIG. 5N is merely for illustration, and the
disclosure is not limited thereto. In this embodiment, the RDL
structure 50 is formed on the front side of the die 28, and may be
referred as a front-side RDL structure. The RDL structure 50 is
electrically connected to the die 28 through the wafer 18. In
detail, the RDL structure 50 is electrically connected to the pads
22 of the die 28 through the pads 11 of the wafer 18 and the
bonding structure 30.
[0095] A plurality of connectors 51 are formed on the
redistribution layer RDL3 of the RDL structure 50. In some
embodiments, the connectors 51 are referred as conductive
terminals. The connectors 51 are electrically connected to the die
28 through the RDL structure 50, the pads 11 and the bonding
structure 30. The materials, forming methods, and the structure of
the RDL structure 50 and the connectors 51 are substantially the
same as or different from those described in the first embodiment,
and is not described again.
[0096] Referring to FIG. 5N, a 3DIC structure 100c is thus
completed. The 3DIC structure 100c includes the die 28, the carrier
49, the bonding film 48, the dielectric structure 45, the plurality
of pads 11 of the wafer 18, the RDL structure 50, and the plurality
of connectors 51. The die 28 is bonded to the pads 11 through a
bonding structure 30, such as a hybrid bonding structure. The
dielectric structure 45 covers the sidewalls and the bottom surface
(that is, back surface) of the die 28. The carrier 49 is bonded to
the dielectric structure 45 though a bonding film 48. The
connectors 51 are electrically connected to the die 28 through the
RDL structure 50, the pads 11 and the bonding structure 30. In some
embodiments, the bonding film 48 is not in contact with the die 28,
and is separated from the die 28 by the dielectric structure 45
therebetween. In some embodiments, the RDL structure 50 is not in
contact with the die 28 and the dielectric structure 45, and is
physically separated from the die 28 and the dielectric structure
45 by the bonding structure 15, the pads 11 and the dielectric
layer 12 of the wafer 18 therebetween.
[0097] In some other embodiments, the RDL structure 50 may be not
formed, and the connectors 51 may be in electrical contact with the
pads 11 of the wafer 18.
[0098] Referring to FIG. 5M and FIG. 6, in some embodiments, after
a portion of the wafer 18 is removed, a protection layer 52 is
formed on the dielectric layer 12 and pads 11 of the wafer 18. The
protection layer 52 may be a dielectric layer, a polymer layer or a
combination thereof. The material and the forming method of the
protection layer 52 may be the same as or different from those of
the dielectric layer 12 or the polymer layer PM1, PM2, or PM3. The
protection layer 52 has a plurality of openings 52a exposing
portions of the top surfaces of the pads 11. The openings 52a may
be formed by photolithograph and etching processes. Thereafter, the
connectors 51 are formed on and electrically connected to the pads
11 exposed by the openings of the protection layer 52.
[0099] In some other embodiments, the stop layer 39 is not removed
when removing portions of the wafer 18, and remained to serve as
the protection layer 52.
[0100] Referring to FIG. 6, a 3DIC structure 100d is thus
completed, the 3DIC structure 100d includes the die 28, the carrier
49, the bonding film 48, the dielectric structure 45, the plurality
of pads 11 of the wafer 18, and the plurality of connectors 51.
Except the 3DIC structure 100d does not include a RDL structure,
the other structure features of the 3DIC structure 100d are
substantially the same as those of the 3DIC structure 100c.
[0101] FIG. 7 is a cross-sectional view illustrating an example of
two dies stacked on a wafer according to some embodiments of the
disclosure.
[0102] Referring to FIG. 7, in some embodiments, a 3DIC structure
100e includes two dies 28 and 28', the carrier 49, the bonding film
48, a dielectric structure 45', the plurality of pads 11 of the
wafer 18, the RDL structure 50, and the plurality of connectors 51.
In some embodiments, after the dielectric layer 33b is formed (as
shown in FIG. 5E), the die 28' is bonded to the die 28 through a
bonding process, such as a hybrid bonding process, a fusion bonding
process, or a combination thereof. Thereafter, processes similar to
those described from FIG. 5C to FIG. 5J are performed to form the
dielectric structure 45'.
[0103] Still referring to FIG. 7, the dielectric structure 45'
covers the sidewalls of the dies 28 and 28'and the bottom surface
of the die 28'. The dielectric structure 45' is a multi-layer
structure. In some embodiments, the dielectric structure 45'
includes the dielectric layer 33b, a dielectric layer 56a and a
dielectric layer 56b. In some embodiments, the corners .theta.1 and
.theta.5 of the dielectric layer 33b and the dielectric layer 56a
are rounding, while the corner .theta.6 of the dielectric layer 56b
is a right angle or slightly rounded. The structural feature of the
corner of the dielectric layer 56b is substantially the same as or
different from those of the second dielectric layer 40a as
described in FIG. 5J. The other structural features of the 3DIC
structure 100e may be the same as or different from those of the
3DIC structure 100c. It is noted that, in 3DIC structure 100e, the
RDL structure 50 may also be omitted like the 3DIC structure 100d
as shown in FIG. 6.
[0104] In the foregoing embodiments, the die is bonded to the wafer
through a hybrid bonding process, but the disclosure is not limited
thereto. In some other embodiments, the die may be bonded to the
wafer through a fusion bonding process.
[0105] Referring to FIG. 8A, a 3DIC structure 80b similar to the
3DIC structure 80a (FIG. 5L) is formed, the difference lies in that
the die 28 is bonded to the wafer 18 through a fusion bonding
process. In some embodiments, a bonding structure 115 of the wafer
18 and a bonding structure 126 of the die 28 include dielectric
materials and do not include conductive materials. The bonding
structure 115 includes a dielectric layer 113. The bonding
structure 126 includes a dielectric layer 124. The materials of the
dielectric layer 113 and the dielectric layer 124 are substantially
the same as or different from those of the dielectric layer 13 and
the dielectric layer 24 described in the foregoing embodiments. The
bonding structure 115 and the bonding structure 126 differs from
the bonding structure 15 and the bonding structure 26 in that no
conductive feature is formed in the dielectric layer 113 or in the
dielectric layer 124, respectively. The bonding structure 126 and
the bonding structure 115 are bonded through a fusion bonding
process, and together form a bonding structure 130 which is a
fusion bonding structure.
[0106] Expect the die 28 and the wafer 18 are bonded through a
different method, the other forming method and structural features
of the 3DIC structure 80b are substantially the same as or
different from those of the 3DIC structure 80a (FIG. 5L).
[0107] Referring to FIG. 8B, in some embodiments, the 3DIC
structure 80b is turned over, the wafer 18 is removed. In some
embodiments, the wafer 18 is completely removed, and the top
surfaces of the dielectric structure 45 and the die 28 are
exposed.
[0108] Referring to FIG. 8B and FIG. 8C, the bonding structure 126
is patterned to form a plurality of openings 53 exposing the top
surface of the pads 22 of the die 28. A plurality of connectors 54
are formed in the openings 53 of the bonding structure 126 to be in
electrical contact with the pads 22 of the die 28. Thereafter, a
RDL structure 50 including polymer layers PM1, PM2, PM3 and
redistribution layers RDL1, RDL2, RDL3 is formed on the dielectric
structure 45 and the die 28. The RDL structure 50 is electrically
connected to the pads 22 of the die 28 through the connectors 54. A
plurality of connectors 51 are formed on the RDL structure 50 and
electrically connected to the die 28 through the RDL structure
50.
[0109] Referring to FIG. 8C, a 3DIC structure 100f is thus
completed, the 3DIC structure 100f is similar to the 3DIC structure
100c, the difference lies in that the 3DIC structure 100f does not
include the wafer 18, and the RDL structure 50 is in electrical
contact with the connector 54 formed in the bonding structure 126
of the die 28. The RDL structure 50 is in contact with the die 28
and the dielectric structure 45. The other structural features of
the 3DIC structure 100f may be substantially the same as or
different from those of the 3DIC structure 100c, and are not
described again.
[0110] In some embodiments, the 3DIC structure 100f may include two
dies stacked vertically. Referring to FIG. 9, a 3DIC structure 100g
may be formed. The 3DIC structure 100g is similar to the 3DIC
structure 100f except that the 3DIC structure 100g includes two
dies 28 and 28' stacked vertically.
[0111] In some embodiments, the RDL structure 50 included in the
3DIC structure 100f or 100g may be omitted, and a plurality of dies
28 side by side may be includes in the 3DIC structure. Referring to
FIG. 8B and FIG. 10, in some embodiments, after the wafer 18 is
removed from the 3DIC structure 80b, a plurality of openings 53'
are formed in the bonding structure 126. The openings 53' expose
portions of top surfaces of the pads 11 of the dies 28. Thereafter,
the connectors 51 are formed on and electrically connected to the
pads exposed by the openings 53', and a 3DIC structure 100h is thus
completed. The 3DIC structure 100h includes a plurality of dies 28
side by side. The connectors 51 are in contact with the die 28 and
the dielectric structure 45. In some embodiments, the connectors 51
are in contact with the pads 22 of the die 28, but the disclosure
is not limited thereto. In some other embodiments, other conductive
features may be included between the pads 22 and the connectors
51.
[0112] In the embodiments of the disclosure, during the
planarization process of planarizing the top surfaces of the die
and the dielectric layer aside the die, the corner of the die is
protected and covered by the dielectric material layer, therefore,
the corner rounding issue of the die edge is avoided or reduced. On
the other hand, before forming the bonding film, the dielectric
structure is formed of two dielectric layers and planarized by an
etching process and a planarization process, as protrusions are
formed on wafer edge by the etching process before the
planarization process is performed, the rounding issue may occur to
the dielectric structure on wafer edge is thus avoided or reduced.
Therefore, the bonding film on the dielectric structure has a flat
surface, and better adhesion or bonding between the bonding film
and the carrier or wafer is achieved.
[0113] In some embodiments, a 3DIC structure includes a die, a
conductive terminal, and a dielectric structure. The die is bonded
to a carrier through a bonding film. The conductive terminal is
disposed over and electrically connected to the die. The dielectric
structure comprises a first dielectric layer and a second
dielectric layer. The first dielectric layer is disposed laterally
aside the die. The second dielectric layer is disposed between the
first dielectric layer and the bonding film, and between the die
and the boding film. A second edge of the second dielectric layer
is more flat than a first edge of the first dielectric layer.
[0114] In some embodiments of the disclosure, a method of
manufacturing a 3DIC structure comprises the following steps. A die
is bonded to a wafer. A first dielectric layer is formed on the
wafer and laterally aside the die. A second dielectric material
layer is formed on the die and the first dielectric layer. A
portion of the second dielectric material layer over a non-edge
region of the wafer is selectively removed to form a protruding
portion on an edge region of the wafer. The second dielectric
material layer is planarized to form a second dielectric layer on
the first dielectric layer and the die. A bonding film is formed on
the second dielectric layer. A carrier is bonded to the wafer
through the bonding film.
[0115] In alternative embodiments of the disclosure, a method of
manufacturing a 3DIC structure comprises the following steps. A die
is bonded to a wafer. A first dielectric material layer is formed
on the wafer and the die. A portion of the first dielectric
material layer on the die is selectively removed. The first
dielectric material layer and the die are planarized, so as to form
a first dielectric layer laterally aide the die. A second
dielectric layer is formed on the first dielectric layer and the
die. A carrier is bonded to the second dielectric layer through a
bonding film.
[0116] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the disclosure. Those skilled in the art should appreciate that
they may readily use the disclosure as a basis for designing or
modifying other processes and structures for carrying out the same
purposes and/or achieving the same advantages of the embodiments
introduced herein. Those skilled in the art should also realize
that such equivalent constructions do not depart from the spirit
and scope of the disclosure, and that they may make various
changes, substitutions, and alterations herein without departing
from the spirit and scope of the disclosure.
* * * * *