U.S. patent application number 16/131822 was filed with the patent office on 2019-01-10 for moveable edge ring design.
The applicant listed for this patent is LAM RESEARCH CORPORATION. Invention is credited to Raphael CASAES, Jon MCCHESNEY, Robert Griffith O'NEILL, Alex PATERSON, Haoquan YAN.
Application Number | 20190013232 16/131822 |
Document ID | / |
Family ID | 56408377 |
Filed Date | 2019-01-10 |
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United States Patent
Application |
20190013232 |
Kind Code |
A1 |
YAN; Haoquan ; et
al. |
January 10, 2019 |
MOVEABLE EDGE RING DESIGN
Abstract
An edge ring is configured to be raised and lowered relative to
a pedestal, via one or more lift pins, in a processing chamber of a
substrate processing system. The edge ring includes an upper
surface, an annular inner diameter, an annular outer diameter, a
lower surface, and at least one feature arranged in the lower
surface of the edge ring. At least one inner surface of the at
least one feature is sloped.
Inventors: |
YAN; Haoquan; (Fremont,
CA) ; O'NEILL; Robert Griffith; (Hayward, CA)
; CASAES; Raphael; (Alameda, CA) ; MCCHESNEY;
Jon; (Fremont, CA) ; PATERSON; Alex; (San
Jose, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
LAM RESEARCH CORPORATION |
Fremont |
CA |
US |
|
|
Family ID: |
56408377 |
Appl. No.: |
16/131822 |
Filed: |
September 14, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14705430 |
May 6, 2015 |
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16131822 |
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14598943 |
Jan 16, 2015 |
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14705430 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/67069 20130101;
H01J 37/023 20130101; H01L 21/68742 20130101; H01L 21/68735
20130101; H01J 37/32642 20130101; H01J 37/32715 20130101; H01J
37/20 20130101; H01J 37/32623 20130101 |
International
Class: |
H01L 21/687 20060101
H01L021/687; H01J 37/32 20060101 H01J037/32; H01J 37/02 20060101
H01J037/02; H01L 21/67 20060101 H01L021/67; H01J 37/20 20060101
H01J037/20 |
Claims
1. An edge ring configured to be raised and lowered relative to a
pedestal, via one or more lift pins, in a processing chamber of a
substrate processing system, the edge ring comprising: an upper
surface; an annular inner diameter; an annular outer diameter; a
lower surface; and at least one feature arranged in the lower
surface of the edge ring, wherein at least one inner surface of the
at least one feature is sloped.
2. The edge ring of claim 1, wherein at least two inner surfaces of
the at least one feature are sloped.
3. The edge ring of claim 1, wherein the at least one feature is
triangular in at least one cross-sectional view.
4. The edge ring of claim 1, wherein the annular inner diameter of
the edge ring is configured to overlap an upper plate of the
pedestal.
5. The edge ring of claim 4, wherein the at least one feature is
arranged in a portion of the lower surface of the edge ring
overlapping the upper plate of the pedestal.
6. The edge ring of claim 1, wherein the lower surface of the edge
ring is arranged to receive the one or more lift pins.
7. The edge ring of claim 1, wherein the at least one feature
comprises a plurality of features each having at least one inner
surface that is sloped.
8. The edge ring of claim 7, wherein the plurality of features are
circumferentially arranged in a spaced relationship around the
lower surface of the edge ring.
9. The edge ring of claim 8, wherein the plurality of features is
arranged to align the edge ring relative to the one or more lift
pins.
10. The edge ring of claim 8, wherein the plurality of features is
arranged to self-center the edge ring relative to the pedestal.
11. The edge ring of claim 1, wherein the at least one feature
corresponds to a groove.
12. A pedestal comprising the edge ring of claim 1.
13. A system comprising the pedestal of claim 12 and further
comprising an actuator configured to raise and lower the one or
more lift pins to raise and lower the edge ring.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present disclosure is a continuation of U.S. patent
application Ser. No. 14/705,430, filed on May 6, 2015, which is a
continuation-in-part of U.S. patent application Ser. No.
14/598,943, filed on Jan. 22, 2015. The entire disclosures of the
applications referenced above are incorporated herein by
reference.
FIELD
[0002] The present disclosure relates to substrate processing
systems, and more particularly to edge coupling rings of substrate
processing systems.
BACKGROUND
[0003] The background description provided here is for the purpose
of generally presenting the context of the disclosure. Work of the
presently named inventors, to the extent it is described in this
background section, as well as aspects of the description that may
not otherwise qualify as prior art at the time of filing, are
neither expressly nor impliedly admitted as prior art against the
present disclosure.
[0004] Substrate processing systems may be used to perform etching
and/or other treatment of substrates such as semiconductor wafers.
A substrate may be arranged on a pedestal in a processing chamber
of the substrate processing system. For example during etching in a
plasma enhanced chemical vapor deposition (PECVD) process, a gas
mixture including one or more precursors is introduced into the
processing chamber and plasma is struck to etch the substrate.
[0005] Edge coupling rings have been used to adjust an etch rate
and/or etch profile of the plasma near a radially outer edge of the
substrate. The edge coupling ring is typically located on the
pedestal around the radially outer edge of the substrate. Process
conditions at the radially outer edge of the substrate can be
modified by changing a position of the edge coupling ring, a shape
or profile of an inner edge of the edge coupling ring, a height of
the edge coupling ring relative to an upper surface of the
substrate, a material of the edge coupling ring, etc.
[0006] Changing the edge coupling ring requires the processing
chamber to be opened, which is undesirable. In other words, an edge
coupling effect of the edge coupling ring cannot be altered without
opening the processing chamber. When the edge coupling ring is
eroded by plasma during etching, the edge coupling effect changes.
Correcting erosion of the edge coupling ring requires the
processing chamber to be opened in order to replace the edge
coupling ring.
[0007] Referring now to FIGS. 1-2, a substrate processing system
may include a pedestal 20 and an edge coupling ring 30. The edge
coupling ring 30 may include a single piece or two or more
portions. In the example in FIGS. 1-2, the edge coupling ring 30
includes a first annular portion 32 arranged near a radially outer
edge of a substrate 33. A second annular portion 34 is located
radially inwardly from the first annular portion below the
substrate 33. A third annular portion 36 is arranged below the
first annular portion 32. During use, plasma 42 is directed at the
substrate 33 to etch the exposed portions of the substrate 33. The
edge coupling ring 30 is arranged to help shape the plasma such
that uniform etching of the substrate 33 occurs.
[0008] In FIG. 2, after the edge coupling ring 30 has been used, an
upper surface of a radially inner portion of the edge coupling ring
30 may exhibit erosion as identified at 48. As a result, plasma 42
may tend to etch a radially outer edge of the substrate 33 at a
faster rate than etching of radially inner portions thereof as can
be seen at 44.
SUMMARY
[0009] A substrate processing system includes a processing chamber
and a pedestal arranged in the processing chamber. An edge coupling
ring is arranged adjacent to a radially outer edge of the pedestal.
A first actuator is configured to selectively move the edge
coupling ring to a raised position relative to the pedestal to
provide clearance between the edge coupling ring and the pedestal
to allow a robot arm to remove the edge coupling ring from the
processing chamber.
[0010] In other features, a lifting ring is arranged below at least
part of the edge coupling ring. The first actuator biases the
lifting ring and the lifting ring biases the edge coupling ring. A
pillar is arranged between the first actuator and the lifting ring.
A robot arm is configured to remove the edge coupling ring from the
processing chamber when the edge coupling ring and the lifting ring
are in a raised position. A holder is connected to the robot arm.
The holder includes a self-centering feature that mates with a
self-centering feature on the edge coupling ring. The edge coupling
ring includes a self-centering feature that mates with a
self-centering feature on the lifting ring.
[0011] In other features, a bottom edge coupling ring is arranged
below at least part of the edge coupling ring and the lifting ring.
The bottom edge coupling ring includes a self-centering feature
that mates with a self-centering feature on the lifting ring.
[0012] In other features, the lifting ring includes a projection
that extends radially outwardly. The projection includes a groove
formed on a bottom facing surface thereof. The groove is biased by
the pillar when the edge coupling ring is lifted.
[0013] In other features, the robot arm removes the edge coupling
ring from the processing chamber without requiring the processing
chamber to be opened to atmospheric pressure. A second actuator is
configured to move the edge coupling ring relative to the lifting
ring to alter an edge coupling profile of the edge coupling ring. A
middle edge coupling ring is arranged between at least part of the
edge coupling ring and the lifting ring. The middle edge coupling
ring remains stationary when the second actuator moves the edge
coupling ring relative to the lifting ring.
[0014] In other features, a controller is configured to move the
edge coupling ring using the second actuator in response to erosion
of a plasma-facing surface of the edge coupling ring. The
controller is configured to automatically move the edge coupling
ring using the second actuator after the edge coupling ring is
exposed to a predetermined number of etching cycles. The controller
is configured to automatically move the edge coupling ring using
the second actuator after the edge coupling ring is exposed to a
predetermined period of etching.
[0015] In other features, a sensor is configured to communicate
with the controller and to detect the erosion of the edge coupling
ring. A robot arm is configured to communicate with the controller
and to adjust a position of the sensor. A controller is configured
to move the edge coupling ring to a first position using the second
actuator for a first treatment of the substrate using a first edge
coupling effect and then to a second position using the second
actuator for a second treatment of the substrate using a second
edge coupling effect that is different than the first edge coupling
effect.
[0016] A method for maintaining an edge coupling ring in a
substrate processing system includes arranging an edge coupling
ring adjacent to a radially outer edge of a pedestal in a
processing chamber; using a first actuator to selectively move the
edge coupling ring to a raised position relative to the pedestal;
and replacing the edge coupling ring using a robot arm when the
edge coupling ring is in the raised position.
[0017] In other features, the method includes arranging a lifting
ring below at least part of the edge coupling ring. The actuator
biases the lifting ring and the lifting ring biases the edge
coupling ring. The method includes arranging a pillar between the
first actuator and the lifting ring. The method includes attaching
a holder to the robot arm. The holder includes a self-centering
feature that mates with a self-centering feature on the edge
coupling ring. The method includes using a self-centering feature
on the edge coupling ring to mate with a self-centering feature on
the lifting ring.
[0018] In other features, the method includes arranging a bottom
edge coupling ring below at least part of the edge coupling ring
and the lifting ring. The method includes using a self-centering
feature on the bottom edge coupling ring to mate with a
self-centering feature on the lifting ring. The lifting ring
includes a projection that extends radially outwardly. The
projection includes a groove formed on a bottom facing surface
thereof. The groove is biased by the pillar when the edge coupling
ring is lifted.
[0019] In other features, the method includes moving the edge
coupling ring relative to the lifting ring using a second actuator
to alter an edge coupling profile of the edge coupling ring. The
method includes arranging a middle edge coupling ring between at
least part of the edge coupling ring and the lifting ring, wherein
the middle edge coupling ring remains stationary when the second
actuator moves the edge coupling ring relative to the lifting
ring.
[0020] In other features, the method includes moving the edge
coupling ring using the second actuator in response to erosion of a
plasma-facing surface of the edge coupling ring. The method
includes automatically moving the edge coupling ring after the edge
coupling ring is exposed to a predetermined number of etching
cycles. The method includes automatically moving the edge coupling
ring after the edge coupling ring is exposed to a predetermined
period of etching.
[0021] In other features, the method includes detecting erosion of
the edge coupling ring using a sensor. The method includes moving
the edge coupling ring to a first position using the second
actuator for a first treatment of the substrate using a first edge
coupling effect and then to a second position using the second
actuator for a second treatment of the substrate using a second
edge coupling effect that is different than the first edge coupling
effect.
[0022] Further areas of applicability of the present disclosure
will become apparent from the detailed description, the claims and
the drawings. The detailed description and specific examples are
intended for purposes of illustration only and are not intended to
limit the scope of the disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The present disclosure will become more fully understood
from the detailed description and the accompanying drawings,
wherein:
[0024] FIG. 1 is a side cross-sectional view of a pedestal and an
edge coupling ring according to the prior art;
[0025] FIG. 2 is a side cross-sectional view of a pedestal and an
edge coupling ring according to the prior art after erosion of the
edge coupling ring has occurred;
[0026] FIG. 3 is a side cross-sectional view of an example of a
pedestal, an edge coupling ring and an actuator according to the
present disclosure;
[0027] FIG. 4 is a side cross-sectional view of the pedestal, the
edge coupling ring and the actuator of FIG. 3 after erosion of the
edge coupling ring has occurred;
[0028] FIG. 5 is a side cross-sectional view of the pedestal, the
edge coupling ring and the actuator of FIG. 3 after erosion of the
edge coupling ring has occurred and the actuator is moved;
[0029] FIG. 6 is a side cross-sectional view of another example of
a pedestal, an edge coupling ring and an actuator located in
another position according to the present disclosure;
[0030] FIG. 7 is a side cross-sectional view of another example of
a pedestal, an edge coupling ring and a piezoelectric actuator
according to the present disclosure;
[0031] FIG. 8 is a side cross-sectional view of the pedestal, the
edge coupling ring and the piezoelectric actuator of FIG. 7 after
erosion has occurred and the piezoelectric actuator is moved;
[0032] FIG. 9 is a functional block diagram of an example of a
substrate processing chamber including a pedestal, an edge coupling
ring and an actuator according to the present disclosure;
[0033] FIG. 10 is a flowchart illustrating steps of an example of a
method for operating the actuator to move the edge coupling ring
according to the present disclosure;
[0034] FIG. 11 is a flowchart illustrating steps of another example
of a method for operating the actuator to move the edge coupling
ring according to the present disclosure;
[0035] FIG. 12 is a functional block diagram of an example of a
processing chamber including an edge coupling ring movable by
actuators arranged outside of the processing chamber according to
the present disclosure;
[0036] FIGS. 13A and 13B illustrates an example of side-to-side
tilting of an edge coupling ring according to the present
disclosure;
[0037] FIG. 14 illustrates an example of a method for moving an
edge coupling ring during processing of a substrate;
[0038] FIG. 15 is a plan view of an example of a pedestal including
an edge coupling ring and a lifting ring;
[0039] FIG. 16 is a side cross-sectional view of an example of the
edge coupling ring and lifting ring;
[0040] FIG. 17 is a side cross-sectional view of an example of the
edge coupling ring being lifted by the lifting ring and the edge
coupling ring being removed by a robot arm;
[0041] FIG. 18 is a side cross-sectional view of an example of a
movable edge coupling ring and a lifting ring;
[0042] FIG. 19 is a side cross-sectional view of the movable edge
coupling ring of FIG. 18 in a raised position;
[0043] FIG. 20 is a side cross-sectional view of the edge coupling
ring of FIG. 18 being lifted by the lifting ring and the edge
coupling ring being removed by a robot arm;
[0044] FIG. 21 is a side cross-sectional view of an example of a
movable edge coupling ring;
[0045] FIG. 22 is a side cross-sectional view of the edge coupling
ring of FIG. 21 being lifted by the actuator and removed by a robot
arm;
[0046] FIG. 23 is an example of a method for replacing an edge
coupling ring without opening a processing chamber;
[0047] FIG. 24 is an example of a method for moving an edge
coupling ring due to erosion and replacing an edge coupling ring
without opening a processing chamber; and
[0048] FIG. 25 is an example of a method for raising an edge
coupling ring due to erosion and replacing the edge coupling ring
without opening a processing chamber.
[0049] In the drawings, reference numbers may be reused to identify
similar and/or identical elements.
DETAILED DESCRIPTION
[0050] The present disclosure allows one or more portions of an
edge coupling ring to be moved vertically and/or horizontally
relative to a substrate or pedestal in a substrate processing
system. The movement changes an edge coupling effect of the plasma
relative to the substrate during etching or other substrate
treatment without requiring the processing chamber to be
opened.
[0051] Referring now to FIGS. 3-5, a substrate processing system
includes a pedestal 20 and an edge coupling ring 60. The edge
coupling ring 60 may be made of a single portion or two or more
portions may be used. In the example in FIGS. 3-5, the edge
coupling ring 60 includes a first annular portion 72 arranged
radially outside of the substrate 33. A second annular portion 74
is located radially inwardly from the first annular portion 72
below the substrate 33. A third annular portion 76 is arranged
below the first annular portion 72.
[0052] An actuator 80 may be arranged in various locations to move
one or more portions of the edge coupling ring 60 relative to the
substrate 33 as will be described further below. For example only,
in FIG. 3 the actuator 80 is arranged between the first annular
portion 72 of the edge coupling ring 60 and the third annular
portion 76 of the edge coupling ring 60. In some examples, the
actuator 80 may include a piezoelectric actuator, a stepper motor,
a pneumatic drive, or other suitable actuator. In some examples,
one, two, three, or four or more actuators are used. In some
examples, multiple actuators are arranged uniformly around the edge
coupling ring 60. The actuator(s) 80 may be arranged inside or
outside of the processing chamber.
[0053] During use, plasma 82 is directed at the substrate 33 to
etch the exposed portions of the substrate 33. The edge coupling
ring 60 is arranged to help shape the plasma electric field such
that uniform etching of the substrate 33 occurs. As can be seen at
84 and 86 in FIG. 4, one or more portions of the edge coupling ring
60 may be eroded by the plasma 82. As a result of the erosion,
non-uniform etching of the substrate 33 may occur near a radially
outer edge of the substrate 33. Normally, the process would need to
be stopped, the processing chamber opened and the edge coupling
ring replaced.
[0054] In FIG. 5, the actuator 80 is used to move one or more
portions of the edge coupling ring 60 to alter the position of the
one or more portions of the edge coupling ring 60. For example, the
actuator 80 may be used to move the first annular portion 72 of the
edge coupling ring 60. In this example, the actuator 80 moves the
first annular portion 72 of the edge coupling ring 60 in an upward
or vertical direction such that an edge 86 of the first annular
portion 72 of the edge coupling ring 60 is higher relative to the
radially outer edge of the substrate 33. As a result, etch
uniformity near the radially outer edge of the substrate 33 is
improved.
[0055] Referring now to FIG. 6, as can be appreciated, the actuator
may be arranged in one or more other locations and may move in
other directions such as horizontal, diagonal, etc. Horizontal
movement of the portion of the edge coupling ring may be performed
to center the edge coupling effect relative to the substrate. In
FIG. 6, an actuator 110 is arranged radially outside of the edge
coupling ring 60. In addition, the actuator 110 moves in a vertical
(or an up/down) direction as well as in a horizontal (or side to
side) direction. Horizontal repositioning may be used when etching
of the substrates shows a horizontal offset of the edge coupling
ring relative to the substrates. The horizontal offset may be
corrected without opening the processing chamber. Likewise, tilting
of the edge coupling ring may be performed by actuating some of the
actuators differently than others of the actuators to correct or
create side-to-side asymmetry.
[0056] Rather than locating the actuator 110 between annular
portions of the edge coupling ring, the actuator 110 may also be
attached to a radially outer wall or other structure identified at
114. Alternately, the actuator 110 may be supported from below by a
wall or other structure identified at 116.
[0057] Referring now to FIG. 7-8, another example of an edge
coupling ring 150 and a piezoelectric actuator 154 is shown. In
this example, the piezoelectric actuator 154 moves the edge
coupling ring 150. The piezoelectric actuator 154 is mounted in the
first annular portion 72 and the third annular portion 76 of the
edge coupling ring 150. In FIG. 8, the piezoelectric actuator 154
moves the first annular portion 72 of the edge coupling ring 150 to
adjust a position of an edge 156 of the first annular portion
72.
[0058] Referring now to FIG. 9, an example of a substrate
processing chamber 500 for performing etching using RF plasma is
shown. The substrate processing chamber 500 includes a processing
chamber 502 that encloses other components of the substrate
processing chamber 500 and contains the RF plasma. The substrate
processing chamber 500 includes an upper electrode 504 and a
pedestal 506 including a lower electrode 507. An edge coupling ring
503 is supported by the pedestal 506 and is arranged around the
substrate 508. One or more actuators 505 may be used to move the
edge coupling ring 503. During operation, a substrate 508 is
arranged on the pedestal 506 between the upper electrode 504 and
the lower electrode 507.
[0059] For example only, the upper electrode 504 may include a
showerhead 509 that introduces and distributes process gases. The
showerhead 509 may include a stem portion including one end
connected to a top surface of the processing chamber. A base
portion is generally cylindrical and extends radially outwardly
from an opposite end of the stem portion at a location that is
spaced from the top surface of the processing chamber. A
substrate-facing surface or faceplate of the base portion of the
showerhead includes a plurality of holes through which process gas
or purge gas flows. Alternately, the upper electrode 504 may
include a conducting plate and the process gases may be introduced
in another manner. The lower electrode 507 may be arranged in a
non-conductive pedestal. Alternately, the pedestal 506 may include
an electrostatic chuck that includes a conductive plate that acts
as the lower electrode 507.
[0060] An RF generating system 510 generates and outputs an RF
voltage to one of the upper electrode 504 and the lower electrode
507. The other one of the upper electrode 504 and the lower
electrode 507 may be DC grounded, AC grounded or floating. For
example only, the RF generating system 510 may include an RF
voltage generator 511 that generates the RF voltage that is fed by
a matching and distribution network 512 to the upper electrode 504
or the lower electrode 507. In other examples, the plasma may be
generated inductively or remotely.
[0061] A gas delivery system 530 includes one or more gas sources
532-1, 532-2, . . . , and 532-N (collectively gas sources 532),
where N is an integer greater than zero. The gas sources supply one
or more precursors and mixtures thereof. The gas sources may also
supply purge gas. Vaporized precursor may also be used. The gas
sources 532 are connected by valves 534-1, 534-2, . . . , and 534-N
(collectively valves 534) and mass flow controllers 536-1, 536-2, .
. . , and 536-N (collectively mass flow controllers 536) to a
manifold 540. An output of the manifold 540 is fed to the
processing chamber 502. For example only, the output of the
manifold 540 is fed to the showerhead 509.
[0062] A heater 542 may be connected to a heater coil (not shown)
arranged in the pedestal 506. The heater 542 may be used to control
a temperature of the pedestal 506 and the substrate 508. A valve
550 and pump 552 may be used to evacuate reactants from the
processing chamber 502. A controller 560 may be used to control
components of the substrate processing chamber 500. The controller
560 may also be used to control the actuator 505 to adjust a
position of one or more portions of the edge coupling ring 503.
[0063] A robot 570 and a sensor 572 may be used to measure erosion
of the edge coupling ring. In some examples, the sensor 572 may
include a depth gauge. The robot 570 may move the depth gauge in
contact with the edge coupling ring to measure erosion.
Alternately, a laser interferometer (with or without the robot 570)
may be used to measure erosion without direct contact. The robot
570 may be omitted if the laser interferometer can be positioned
with a direct line of sight to the edge coupling ring.
[0064] Another robot arm 573 may be used to deliver and remove
substrates onto the pedestal 506. Additionally, the robot arm 573
may be used to deliver unused edge coupling rings onto a lifting
ring and to replace used edge coupling rings after sufficient wear
as will be described further below in conjunction with FIGS. 15-23.
While the same robot arm 573 may be used for both substrates and
edge coupling rings, dedicated robot arms may also be used.
[0065] Referring now to FIG. 10, an example of a method 600 for
operating the actuator to move the edge coupling ring is shown. At
610, at least part of an edge coupling ring is positioned in a
first location relative to the substrate. At 614, the substrate
processing system is operated. The operation may include etching or
other treatment of a substrate. At 618, control determines whether
a predetermined period of etching or a predetermined number etching
cycles have occurred. If the predetermined period or number of
cycles is not exceeded as determined at 618, control returns to
614.
[0066] When the predetermined period or number of cycles are up,
control determines at 624 whether a maximum predetermined etching
period is up, a maximum number of etching cycles has occurred
and/or a maximum # of actuator moves have occurred.
[0067] If 624 is false, control moves at least part of the edge
coupling ring using the actuator. Movement of the edge coupling
ring can be performed automatically, manually or a combination
thereof without opening the processing chamber. If 624 is true,
control sends a message or otherwise indicates that the edge
coupling ring should be serviced/replaced.
[0068] Referring now to FIG. 11, an example of a method 700 for
operating the actuator to move the edge coupling ring is shown. At
710, at least part of an edge coupling ring is positioned in a
first location relative to the substrate. At 714, the substrate
processing system is operated. The operation may include etching or
other treatment of a substrate. At 718, control determines whether
a predetermined amount of erosion of the edge coupling ring has
occurred using a sensor such as a depth gauge or laser
interferometer. If 718 is false, control returns to 714.
[0069] When the predetermined amount of erosion has occurred,
control determines at 724 whether a maximum amount of erosion has
occurred. If 724 is false, control moves at least part of the edge
coupling ring using the actuator. Movement of the edge coupling
ring can be performed automatically, manually or a combination
thereof without opening the processing chamber. If 724 is true,
control sends a message or otherwise indicates that the edge
coupling ring should be serviced/replaced.
[0070] In addition to the foregoing, a determination of whether or
not the edge coupling ring needs to be moved may be based on
inspection of etching patterns of the substrates after processing.
The actuator may be used to adjust the edge coupling profile of the
edge coupling ring without opening the chamber.
[0071] Referring now to FIG. 12, a processing chamber 800 includes
an edge coupling ring 60 arranged on a pedestal 20. The edge
coupling ring 60 includes one or more portions that are movable by
one or more actuators 804 arranged outside of the processing
chamber 800. In this example, the first annular portion 72 is
movable. The actuators 804 may be connected by mechanical linkage
810 to the first annular portion 72 of the edge coupling ring 60.
For example, the mechanical linkage 810 may include a rod member.
The mechanical linkage 810 may pass through a hole 811 in a wall
814 of the processing chamber 800. A seal 812 such as an "O"-ring
may be used. The mechanical linkage 810 may pass through holes 815
in one or more structures such as the third annular portion 76 of
the edge coupling ring 60.
[0072] Referring now to FIGS. 13A and 13B, side-to-side tilting of
an edge coupling ring 830 is shown. Side-to-side tilting may be
used to correct side-to-side misalignment. In FIG. 13A, portions
830-1 and 830-2 of an edge coupling ring 830 on opposite sides of
the substrate are arranged in a first arrangement 840. The portions
830-1 and 830-2 may be generally aligned with portions 832-1 and
832-2 of the edge coupling ring 830. Actuators 836-1 and 836-2 are
arranged between the portions 830-1 and 832-1 and 830-2 and 832-2,
respectively.
[0073] In FIG. 13B, the actuators 836-1 and 836-2 move the
respective portions of the edge coupling ring 830 such that the
edge coupling ring 830 moves to a second arrangement 850 that is
different than the first arrangement 840 shown in FIG. 13A. As can
be appreciated, the substrates may be inspected after treatment and
the tilt relative to the substrate may be adjusted as needed
without opening the processing chamber.
[0074] Referring now to FIG. 14, a method 900 for moving an edge
coupling ring during processing of a substrate is shown. In other
words, different treatments may be performed on a single substrate
in the same processing chamber. The edge coupling effect of the
edge coupling ring may be adjusted between the multiple treatments
performed on the substrate in the same processing chamber before
proceeding to a subsequent substrate. At 910, a substrate is
positioned on a pedestal and a position of the edge coupling ring
is adjusted if needed. At 914, treatment of the substrate is
performed. If processing of the substrate is done as determined at
918, the substrate is removed from the pedestal at 922. At 924,
control determines whether another substrate needs to be processed.
If 924 is true, the method returns to 910. Otherwise the method
ends.
[0075] If 918 is false and the substrate needs additional
treatment, the method determines whether adjustment of the edge
coupling ring is required at 930. If 930 is false, the method
returns to 914. If 930 is true, at least part of the edge coupling
ring is moved using one or more actuators at 934 and the method
returns to 914. As can be appreciated, the edge coupling ring can
be adjusted between treatments of the same substrate in the same
processing chamber.
[0076] Referring now to FIG. 15, an edge coupling ring 1014 and a
lifting ring 1018 are arranged adjacent to and around an upper
surface of a pedestal 1010. The edge coupling ring 1014 includes a
radially inner edge that is arranged adjacent to the substrate
during etching as described above. The lifting ring 1018 is
arranged below at least part of the edge coupling ring 1014. The
lifting ring 1018 is used to raise the edge coupling ring 1014
above a surface of the pedestal 1010 when removing the edge
coupling ring 1014 using a robot arm. The edge coupling ring 1014
can be removed without requiring the processing chamber to be
opened to atmospheric pressure. In some examples, the lifting ring
1018 may optionally include an open portion 1019 between
circumferentially spaced ends 1020 to provide clearance for a robot
arm to remove the edge coupling ring 1014 as will be described
below.
[0077] Referring now to FIGS. 16-17, an example of the edge
coupling ring 1014 and lifting ring 1018 are shown in further
detail. In the example shown in FIG. 16, the pedestal may include
an electrostatic chuck (ESC) generally identified at 1021. The ESC
1021 may include one or more stacked plates such as ESC plates
1022, 1024, 1030 and 1032. The ESC plate 1030 may correspond to a
middle ESC plate and the ESC plate 1032 may correspond to an ESC
baseplate. In some examples, an O-ring 1026 may be arranged between
the ESC plates 1024 and 1030. While a specific pedestal 1010 is
shown, other types of pedestals may be used.
[0078] A bottom edge coupling ring 1034 may be arranged below the
edge coupling ring 1014 and the lifting ring 1018. The bottom edge
coupling ring 1034 may be arranged adjacent to and radially outside
of the ESC plates 1024, 1030 and 1032 and the O-ring 1026.
[0079] In some examples, the edge coupling ring 1014 may include
one or more self-centering features 1040, 1044 and 1046. For
example only, the self-centering features 1040 and 1044 may be
triangular-shaped, female self-centering features, although other
shapes may be used. The self-centering feature 1046 may be a sloped
surface. The lifting ring 1018 may include one or more
self-centering features 1048, 1050 and 1051. For example only, the
self-centering features 1048 and 1050 may be triangular-shaped,
male self-centering features, although other shapes may be used.
The self-centering feature 1051 may be a sloped surface having a
complementary shape to the self-centering feature 1046. The
self-centering feature 1048 on the lifting ring 1018 may mate with
the self-centering feature 1044 on the edge coupling ring 1014. The
self-centering feature 1050 on the lifting ring 1018 may mate with
a self-centering feature 1052 of the bottom edge coupling ring
1034.
[0080] The lifting ring 1018 further includes a projection 1054
that extends radially outwardly. A groove 1056 may be arranged on a
bottom-facing surface 1057 of the projection 1054. The groove 1056
is configured to be biased by one end of a pillar 1060 that is
connected to and selectively moved vertically by an actuator 1064.
The actuator 1064 may be controlled by the controller. As can be
appreciated, while a single groove, pillar and actuator are shown,
additional grooves, pillars and actuators may be circumferentially
arranged in a spaced relationship around the lifting ring 1018 to
bias the lifting ring 1018 in an upward direction.
[0081] In FIG. 17, the edge coupling ring 1014 is shown raised in
an upward direction by the lifting ring 1018 using the pillar(s)
1060 and the actuator(s) 1064. The edge coupling ring 1014 can be
removed from the processing chamber by a robot arm. More
particularly, a robot arm 1102 is connected to the edge coupling
ring 1014 by a holder 1104. The holder 1104 may include a
self-centering feature 1110 that mates with the self-centering
feature 1040 on the edge coupling ring 1014. As can be appreciated,
the robot arm 1102 and the holder 1104 may bias the edge coupling
ring upwardly to clear the self-centering feature 1048 on the
lifting ring 1018. Then, the robot arm 1102, the holder 1104 and
the edge coupling ring 1014 can be moved out of the processing
chamber. The robot arm 1102, the holder 1104 and a new edge
coupling ring can be returned and positioned on the lifting ring
1018. Then, the lifting ring 1018 is lowered. The opposite
operation may be used to deliver a new edge coupling ring 1014 onto
the lifting ring 1018.
[0082] Alternately, instead of lifting the robot arm 1102 and
holder 1104 upwardly to lift the edge coupling ring 1014 off of the
lifting ring 1018, the robot arm 1102 and holder 1104 can be
positioned below and in contact with the raised edge coupling ring
1014. Then, the lifting ring 1018 is lowered and the edge coupling
ring 1014 remains on the robot arm 1102 and holder 1104. The robot
arm 1102, the holder 1104 and the edge coupling ring 1014 can be
removed from the processing chamber. The opposite operation may be
used to deliver a new edge coupling ring 1014 onto the lifting ring
1018.
[0083] Referring now to FIGS. 18-20, a movable edge coupling ring
1238 and a lifting ring 1018 are shown. In FIG. 18, one or more
pillars 1210 are moved up and down by one or more actuators 1214
through bores 1220, 1224 and 1228 in the ESC baseplate 1032, the
bottom edge coupling ring 1034 and the lifting ring 1018,
respectively. In this example, a middle edge coupling ring 1240 or
spacer is arranged between the movable edge coupling ring 1238 and
the lifting ring 1018. The middle edge coupling ring 1240 may
include self-centering features 1244 and 1246. A corresponding
self-centering feature 1248 may be provided on the movable edge
coupling ring 1238. The self-centering feature 1248 mates with the
self-centering feature 1246 on the middle edge coupling ring
1240.
[0084] As is described in detail above, erosion of an upwardly
facing surface of the movable edge coupling ring 1238 may occur
during use. This, in turn, may alter the profile of the plasma. The
movable edge coupling ring 1238 may be selectively moved in an
upward direction using the pillars 1210 and the actuators 1214 to
alter the profile of the plasma. In FIG. 19, the movable edge
coupling ring 1238 of FIG. 18 is shown in a raised position. The
middle edge coupling ring 1240 may remain stationary. Eventually,
the movable edge coupling ring 1238 may be moved one or more times
and then the edge coupling ring 1238 and the middle edge coupling
ring 1240 may be replaced.
[0085] In FIG. 20, the actuator 1214 is returned to a lowered state
and the actuator 1064 is moved to a raised state. The edge coupling
ring 1238 and the middle edge coupling ring 1240 are lifted by the
lifting ring 1018 and the movable edge coupling ring 1238 may be
removed by the robot arm 1102 and the holder 1104.
[0086] As can be appreciated, the actuators can be arranged in the
processing chamber or outside of the processing chamber. In some
examples, the edge coupling rings may be supplied to the chamber
via a cassette, loadlock, transfer chambers and the like.
Alternatively, the edge coupling rings may be stored outside of the
processing chamber but inside of the substrate processing tool.
[0087] Referring now to FIGS. 21-22, the lifting ring can be
omitted in some examples. An edge coupling ring 1310 is arranged on
the bottom edge coupling ring 1034 and a radially outer edge of the
pedestal. The edge coupling ring 1310 may include one or more
self-centering features 1316 and 1320. The edge coupling ring 1310
may further include a groove 1324 for receiving a top surface of
the pillar 1210, which is biased by the actuator 1214. The
self-centering feature 1320 may be arranged against a corresponding
self-centering feature 1326 of the bottom edge coupling ring 1034.
In some examples, the self-centering features 1320 and 1326 are
inclined planes.
[0088] In FIG. 22, the actuator 1214 and the pillar 1210 bias the
edge coupling ring 1310 upwardly to remove the edge coupling ring
1310 or to adjust a plasma profile after erosion has occurred. The
robot arm 1102 and the holder 1104 can be moved into position below
the edge coupling ring 1310. The self-centering feature 1316 may be
engaged by the self-centering feature 1110 on the holder 1104
connected to the robot arm 1102. Either the robot arm 1102 moves in
an upward direction to provide clearance between the groove 1324
and the pillar 1210 or the pillar 1210 is moved downwardly by the
actuator 1214 to provide clearance for the groove 1324.
[0089] Referring now to FIG. 23, a method 1400 for replacing an
edge coupling ring without opening a processing chamber to
atmospheric pressure is shown. At 1404, the method determines
whether the edge coupling ring is located on the lifting ring. If
1404 is false, the method moves an edge coupling ring into position
on the lifting ring using a robot arm at 1410. After the edge
coupling ring is located on the lifting ring in the processing
chamber, the process is run at 1410. At 1412, the method determines
whether the edge coupling ring is worn using any of the criteria
described above. If 1412 is false, the method returns to 1410 and
the process may be run again. If the edge coupling ring is
determined to be worn at 1412, the edge coupling ring is replaced
at 1416 and the method continues at 1410.
[0090] Referring now to FIG. 24, a method 1500 adjusts a position
of the movable edge coupling ring as needed to offset for erosion
and selectively replaces the movable edge coupling ring when the
movable edge coupling ring is determined to be worn. At 1502, the
method determines whether a movable edge coupling ring is located
on the lifting ring. If 1502 is false, an edge coupling ring is
moved into position on the lifting ring at 1504 and the method
continues at 1502.
[0091] If 1502 is true, the method determines whether a position of
the movable edge coupling ring needs to be adjusted at 1506. If
1506 is true, the method adjusts a position of the movable edge
coupling ring using an actuator and returns to 1506. When 1506 is
false, the method runs the process at 1510. At 1512, the method
determines whether the movable edge coupling ring is worn. If
false, the method returns to 1510.
[0092] If 1512 is true, the method determines whether the movable
edge coupling ring is in a highest (or fully adjusted) position at
1520. If 1520 is false, the method adjusts a position of the
movable edge coupling ring using the actuator 1214 at 1524 and the
method returns to 1510. If 1520 is true, the method replaces the
movable edge coupling ring using the actuator 1064, the lifting
ring 1018 and the robot arm 1102.
[0093] Referring now to FIG. 25, a method 1600 for replacing the
edge coupling ring without opening the process chamber to
atmospheric pressure is shown. At 1610, the lifting ring and edge
coupling ring are biased upwardly using an actuator. At 1620, the
robot arm and the holder are moved underneath the edge coupling
ring. At 1624, the robot arm is moved upwardly to clear
self-centering features of the edge coupling ring or the lifting
ring is moved downwardly. At 1628, the robot arm with the edge
coupling ring is moved out of the processing chamber. At 1632, the
edge coupling ring is detached from the robot arm. At 1636, a
replacement edge coupling ring is picked up by the robot arm. At
1638, the edge coupling ring is positioned on the lifting ring and
aligned using one or more self-centering features. At 1642, the
robot arm is lowered to allow sufficient clearance for the
self-centering feature and the robot arm is removed from the
chamber. At 1646, the lifting ring and the edge coupling ring are
lowered into position.
[0094] The foregoing description is merely illustrative in nature
and is in no way intended to limit the disclosure, its application,
or uses. The broad teachings of the disclosure can be implemented
in a variety of forms. Therefore, while this disclosure includes
particular examples, the true scope of the disclosure should not be
so limited since other modifications will become apparent upon a
study of the drawings, the specification, and the following claims.
As used herein, the phrase at least one of A, B, and C should be
construed to mean a logical (A OR B OR C), using a non-exclusive
logical OR, and should not be construed to mean "at least one of A,
at least one of B, and at least one of C." It should be understood
that one or more steps within a method may be executed in different
order (or concurrently) without altering the principles of the
present disclosure.
[0095] In some implementations, a controller is part of a system,
which may be part of the above-described examples. Such systems can
comprise semiconductor processing equipment, including a processing
tool or tools, chamber or chambers, a platform or platforms for
processing, and/or specific processing components (a wafer
pedestal, a gas flow system, etc.). These systems may be integrated
with electronics for controlling their operation before, during,
and after processing of a semiconductor wafer or substrate. The
electronics may be referred to as the "controller," which may
control various components or subparts of the system or systems.
The controller, depending on the processing requirements and/or the
type of system, may be programmed to control any of the processes
disclosed herein, including the delivery of processing gases,
temperature settings (e.g., heating and/or cooling), pressure
settings, vacuum settings, power settings, radio frequency (RF)
generator settings, RF matching circuit settings, frequency
settings, flow rate settings, fluid delivery settings, positional
and operation settings, wafer transfers into and out of a tool and
other transfer tools and/or load locks connected to or interfaced
with a specific system.
[0096] Broadly speaking, the controller may be defined as
electronics having various integrated circuits, logic, memory,
and/or software that receive instructions, issue instructions,
control operation, enable cleaning operations, enable endpoint
measurements, and the like. The integrated circuits may include
chips in the form of firmware that store program instructions,
digital signal processors (DSPs), chips defined as application
specific integrated circuits (ASICs), and/or one or more
microprocessors, or microcontrollers that execute program
instructions (e.g., software). Program instructions may be
instructions communicated to the controller in the form of various
individual settings (or program files), defining operational
parameters for carrying out a particular process on or for a
semiconductor wafer or to a system. The operational parameters may,
in some embodiments, be part of a recipe defined by process
engineers to accomplish one or more processing steps during the
fabrication of one or more layers, materials, metals, oxides,
silicon, silicon dioxide, surfaces, circuits, and/or dies of a
wafer.
[0097] The controller, in some implementations, may be a part of or
coupled to a computer that is integrated with the system, coupled
to the system, otherwise networked to the system, or a combination
thereof. For example, the controller may be in the "cloud" or all
or a part of a fab host computer system, which can allow for remote
access of the wafer processing. The computer may enable remote
access to the system to monitor current progress of fabrication
operations, examine a history of past fabrication operations,
examine trends or performance metrics from a plurality of
fabrication operations, to change parameters of current processing,
to set processing steps to follow a current processing, or to start
a new process. In some examples, a remote computer (e.g. a server)
can provide process recipes to a system over a network, which may
include a local network or the Internet. The remote computer may
include a user interface that enables entry or programming of
parameters and/or settings, which are then communicated to the
system from the remote computer. In some examples, the controller
receives instructions in the form of data, which specify parameters
for each of the processing steps to be performed during one or more
operations. It should be understood that the parameters may be
specific to the type of process to be performed and the type of
tool that the controller is configured to interface with or
control. Thus as described above, the controller may be
distributed, such as by comprising one or more discrete controllers
that are networked together and working towards a common purpose,
such as the processes and controls described herein. An example of
a distributed controller for such purposes would be one or more
integrated circuits on a chamber in communication with one or more
integrated circuits located remotely (such as at the platform level
or as part of a remote computer) that combine to control a process
on the chamber.
[0098] Without limitation, example systems may include a plasma
etch chamber or module, a deposition chamber or module, a
spin-rinse chamber or module, a metal plating chamber or module, a
clean chamber or module, a bevel edge etch chamber or module, a
physical vapor deposition (PVD) chamber or module, a chemical vapor
deposition (CVD) chamber or module, an atomic layer deposition
(ALD) chamber or module, an atomic layer etch (ALE) chamber or
module, an ion implantation chamber or module, a track chamber or
module, and any other semiconductor processing systems that may be
associated or used in the fabrication and/or manufacturing of
semiconductor wafers.
[0099] As noted above, depending on the process step or steps to be
performed by the tool, the controller might communicate with one or
more of other tool circuits or modules, other tool components,
cluster tools, other tool interfaces, adjacent tools, neighboring
tools, tools located throughout a factory, a main computer, another
controller, or tools used in material transport that bring
containers of wafers to and from tool locations and/or load ports
in a semiconductor manufacturing factory.
* * * * *