U.S. patent application number 15/627449 was filed with the patent office on 2018-12-20 for integrated fan-out packages and methods of forming the same.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Co., Ltd.. The applicant listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Wei-Yu Chen, Li-Hsien Huang, An-Jhih Su, Der-Chyang Yeh, Ming-Shih Yeh.
Application Number | 20180366410 15/627449 |
Document ID | / |
Family ID | 64657544 |
Filed Date | 2018-12-20 |
United States Patent
Application |
20180366410 |
Kind Code |
A1 |
Chen; Wei-Yu ; et
al. |
December 20, 2018 |
INTEGRATED FAN-OUT PACKAGES AND METHODS OF FORMING THE SAME
Abstract
Integrated fan-out packages and methods of forming the same are
disclosed. An integrated fan-out package includes a first die, at
least one through integrated fan-out via and a molding layer. The
at least one through integrated fan-out via is aside the first die
and includes a seed layer and a metal layer. The molding layer
encapsulates the at least one through integrated fan-out via and
the first die. Besides, the seed layer surrounds a sidewall of the
metal layer and is between the metal layer and the molding
layer.
Inventors: |
Chen; Wei-Yu; (New Taipei
City, TW) ; Su; An-Jhih; (Taoyuan City, TW) ;
Yeh; Der-Chyang; (Hsin-Chu, TW) ; Huang;
Li-Hsien; (Hsinchu County, TW) ; Yeh; Ming-Shih;
(Hsinchu County, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsinchu |
|
TW |
|
|
Assignee: |
Taiwan Semiconductor Manufacturing
Co., Ltd.
Hsinchu
TW
|
Family ID: |
64657544 |
Appl. No.: |
15/627449 |
Filed: |
June 20, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 2224/04105
20130101; H01L 2224/16235 20130101; H01L 2224/32013 20130101; H01L
2224/73267 20130101; H01L 21/561 20130101; H01L 21/565 20130101;
H01L 24/81 20130101; H01L 2224/12105 20130101; H01L 23/5386
20130101; H01L 23/3128 20130101; H01L 2224/83104 20130101; H01L
24/32 20130101; H01L 2224/9222 20130101; H01L 2224/0401 20130101;
H01L 2224/83102 20130101; H01L 25/50 20130101; H01L 2221/68359
20130101; H01L 2224/27436 20130101; H01L 2224/73204 20130101; H01L
23/5389 20130101; H01L 24/20 20130101; H01L 2224/97 20130101; H01L
23/5383 20130101; H01L 2225/06524 20130101; H01L 21/486 20130101;
H01L 23/49816 20130101; H01L 24/83 20130101; H01L 2224/16237
20130101; H01L 21/4864 20130101; H01L 21/56 20130101; H01L
2224/92244 20130101; H01L 2924/18162 20130101; H01L 2224/83191
20130101; H01L 21/4857 20130101; H01L 21/6835 20130101; H01L 21/568
20130101; H01L 23/3114 20130101; H01L 2224/32225 20130101; H01L
25/0657 20130101; H01L 23/5384 20130101; H01L 24/19 20130101; H01L
2224/92125 20130101; H01L 21/4853 20130101; H01L 2224/2919
20130101; H01L 24/97 20130101; H01L 2225/06517 20130101; H01L 24/16
20130101; H01L 2224/18 20130101; H01L 2224/32145 20130101; H01L
2224/96 20130101; H01L 24/92 20130101; H01L 24/96 20130101; H01L
2221/68345 20130101; H01L 24/27 20130101; H01L 2224/97 20130101;
H01L 2224/83 20130101; H01L 2224/97 20130101; H01L 2224/81
20130101; H01L 2224/96 20130101; H01L 2224/19 20130101; H01L
2224/27436 20130101; H01L 2924/00014 20130101; H01L 2224/2919
20130101; H01L 2924/0665 20130101; H01L 2224/83104 20130101; H01L
2924/00014 20130101; H01L 2224/9222 20130101; H01L 2224/19
20130101; H01L 2224/83 20130101; H01L 2224/18 20130101; H01L
2924/0001 20130101; H01L 2224/73204 20130101; H01L 2224/16225
20130101; H01L 2224/32225 20130101; H01L 2924/00 20130101 |
International
Class: |
H01L 23/538 20060101
H01L023/538; H01L 23/31 20060101 H01L023/31; H01L 25/10 20060101
H01L025/10; H01L 21/48 20060101 H01L021/48; H01L 21/56 20060101
H01L021/56; H01L 25/00 20060101 H01L025/00 |
Claims
1. An integrated fan-out package, comprising: a first die; at least
one through integrated fan-out via outside a peripheral edge of the
first die and comprising a seed layer and a metal layer; and a
molding layer contacting the at least one through integrated
fan-out via and the first die, wherein the seed layer surrounds a
sidewall of the metal layer and is between the metal layer and the
molding layer.
2. The integrated fan-out package of claim 1, wherein the at least
one through integrated fan-out via further comprises a glue layer
between the seed layer and the molding layer.
3. The integrated fan-out package of claim 2, wherein the glue
layer comprises a titanium-based or tantalum-based material and the
seed layer comprises a copper-based material.
4. The integrated fan-out package of claim 1, wherein the molding
layer further covers a portion of a surface of the at least one
through integrated fan-out via.
5. The integrated fan-out package of claim 1, further comprising: a
redistribution layer structure at a first side of the first die and
electrically connected to the first die; and a second die at a
second side of the first die opposite to the first side, wherein
the second die comprises at least one bump and is electrically
connected to the first die through the at least one through
integrated fan-out via and the at least one bump.
6. The integrated fan-out package of claim 5, wherein a portion of
the at least one bump is embedded by the molding layer.
7. The integrated fan-out package of claim 5, further comprising an
underfill layer between the first die and the second die and around
the at least one bump, wherein a die attach film is between the
first die and the underfill layer.
8. The integrated fan-out package of claim 5, further comprising an
underfill layer between the first die and the second die and around
the at least one bump, wherein a die attach film is not present
between the first die and the underfill layer.
9. The integrated fan-out package of claim 8, wherein the underfill
layer is in physical contact with the molding layer.
10. A method of forming an integrated fan-out package, comprising:
placing a first die on a carrier; forming a molding layer over the
first die, wherein at least one first opening is formed in the
molding layer and outside a peripheral edge of the first die, and
the first opening does not expose the carrier; and forming a seed
material layer and a metal material layer on a surface of the first
opening.
11. The method of claim 10, wherein forming the molding layer
comprises: forming a pre-molding layer over the first die; molding
the pre-molding layer to form the molding layer with the at least
one first opening therein.
12. The method of claim 10, further comprising, after forming the
seed material layer and the metal material layer, forming a
redistribution layer structure over a first side of the first die;
debonding the carrier; and bonding a second die to the first die
from a second side of the first die.
13. The method of claim 12, further comprising, after forming the
seed material layer and the metal material layer and before forming
the redistribution layer structure, grinding the molding layer from
the first side of the first die until at least one connector of the
first die is exposed.
14. The method of claim 12, further comprising, after debonding the
carrier and before bonding the second die to the first die,
performing a patterning process to the molding layer from the
second side of the first die, so as to form a second opening
corresponding to the first opening, wherein the patterning process
comprises a laser drilling process.
15. The method of claim 10, further comprising forming a glue
material layer on the surface of the first opening before forming
the seed material layer and the metal material layer.
16. The method of claim 10, wherein a die attach film is formed on
the second side of the first die before placing the first die on
the carrier.
17. A method of forming an integrated fan-out package, comprising:
providing a carrier having a die attach film thereon; placing a
first die on the die attach film; forming a molding layer over the
first die, wherein at least one first opening is formed in the
molding layer, and the first opening penetrates through the molding
layer and is in physical contact with the die attach film; and
forming a seed material layer and a metal material layer on a
surface of the first opening.
18. The method of claim 17, further comprising, after forming the
seed material layer and the metal material layer and before forming
the redistribution layer structure, grinding the molding layer from
the first side of the first die until at least one connector of the
first die is exposed.
19. The method of claim 17, further comprising, after removing the
die attach film and before bonding the second die to the first die,
performing a treatment from a second side of the first die until
the metal material layer in the first opening is exposed, wherein
the treatment comprises a plasma cleaning process.
20. The method of claim 17, further comprising forming a glue
material layer on the surface of the first opening before forming
the seed material layer and the metal material layer.
Description
BACKGROUND
[0001] In recent years, the semiconductor industry has experienced
rapid growth due to continuous improvement in integration density
of various electronic components, e.g., transistors, diodes,
resistors, capacitors, etc. For the most part, this improvement in
integration density has come from successive reductions in minimum
feature size, which allows more components to be integrated into a
given area.
[0002] These smaller electronic components also require smaller
packages that occupy less area than previous packages. Examples of
types of packages for semiconductors include quad flat packages
(QFP), pin grid array (PGA) packages, ball grid array (BGA)
packages, flip chips (FC), three-dimensional integrated circuits
(3DICs), wafer level packages (WLPs), and package on package (PoP)
devices, etc. Currently, integrated fan-out packages are becoming
increasingly popular for their compactness. However, there are many
challenges related to integrated fan-out packages.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] FIG. 1A to FIG. 1J are cross-sectional views of a method of
forming an integrated fan-out package in accordance with some
embodiments.
[0004] FIG. 2A to FIG. 2J are cross-sectional views of a method of
forming an integrated fan-out package in accordance with
alternative embodiments.
DETAILED DESCRIPTION
[0005] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below for the purposes of conveying the
present disclosure in a simplified manner. These are, of course,
merely examples and are not intended to be limiting. For example,
the formation of a second feature over or on a first feature in the
description that follows may include embodiments in which the
second and first features are formed in direct contact, and may
also include embodiments in which additional features may be formed
between the second and first features, such that the second and
first features may not be in direct contact. In addition, the same
reference numerals and/or letters may be used to refer to the same
or similar parts in the various examples the present disclosure.
The repeated use of the reference numerals is for the purpose of
simplicity and clarity and does not in itself dictate a
relationship between the various embodiments and/or configurations
discussed.
[0006] Further, spatially relative terms, such as "beneath",
"below", "lower", "on", "over", "above", "upper" and the like, may
be used herein to facilitate the description of one element or
feature's relationship to another element(s) or feature(s) as
illustrated in the figures. The spatially relative terms are
intended to encompass different orientations of the device in use
or operation in addition to the orientation depicted in the
figures. The apparatus may be otherwise oriented (rotated 90
degrees or at other orientations) and the spatially relative
descriptors used herein may likewise be interpreted
accordingly.
[0007] Other features and processes may also be included. For
example, testing structures may be included to aid in the
verification testing of the 3D packaging or 3DIC devices. The
testing structures may include, for example, test pads formed in a
redistribution layer or on a substrate that allows the testing of
the 3D packaging or 3DIC, the use of probes and/or probe cards, and
the like. The verification testing may be performed on intermediate
structures as well as the final structure. Additionally, the
structures and methods disclosed herein may be used in conjunction
with testing methodologies that incorporate intermediate
verification of known good dies to increase the yield and decrease
costs.
[0008] FIG. 1A to FIG. 1J are cross-sectional views of a method of
forming an integrated fan-out package in accordance with some
embodiments.
[0009] Referring to FIG. 1A, one or more first dies 100 are
provided. In some embodiment, each of the first dies 100 includes a
substrate 102, one or more connectors 104 and a passivation layer
106. The substrate 102 includes, for example but not limited to,
bulk silicon, doped or undoped, or an active layer of a
semiconductor-on-insulator (SOI) substrate. The connectors 104 are
formed over and electrically connected to underlying pads or an
interconnection structure (not shown) of the first dies 100. In
some embodiments, the connectors 104 are formed as the top portions
of the first dies 100. The connectors 104 protrude from the
remaining portions or lower portions of the first dies 100.
Throughout the description, the sides of the first dies 100 with
the connectors 104 are referred to as front sides or first sides.
The connectors 104 can be electrical connectors, dummy connectors
or both. The connectors 104 may include solder bumps, gold bumps,
copper pillars or the like, and are formed with a ball drop process
or an electroplating process. The passivation layer 106 is formed
over the first dies 100 to cover tops and sidewalls of the
connectors 104 and fill gaps between the connectors 104. In some
embodiments, the passivation layer 106 includes a photo-sensitive
material such as polybenzoxazole (PBO), polyimide, benzocyclobutene
(BCB), a combination thereof, or the like, which may be easily
patterned using a lithography mask. In alternative embodiments, the
passivation layer 106 includes a nitride such as silicon nitride,
an oxide such as silicon oxide, phosphosilicate glass (PSG),
borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG),
a combination thereof, or the like.
[0010] In some embodiments, the first dies 100 are formed in a
wafer stage. After the formation of the passivation layer 106, an
adhesive layer or a blanket die attach film is formed over the back
sides or second sides of the first dies 100. A singulation process
is then performed along the scribe regions, using a saw blade or
laser cutting tool, to separate the first dies 100 from each other,
and thus, the first dies 100 with die attach films DAF on the back
sides thereof are provided.
[0011] Continue referring to Figure 1A, one or more first dies 100
are placed on a carrier C. In some embodiments, the die attach
films DAF are formed on the back sides or second sides of the first
dies 100 before the first dies 100 are picked and placed on the
carrier C. The carrier C is provided with a debonding layer DB and
a dielectric layer DI formed thereon. The carrier C may be a blank
glass carrier, a blank ceramic carrier or the like. The debonding
layer DB may be formed of an adhesive such as an ultraviolet (UV)
glue, a light-to-heat conversion (LTHC) glue or the like, although
other types of adhesives may be used. In some embodiments, the
debonding layer DB is decomposable under the heat of light to
thereby release the carrier C from the structure formed thereon.
The dielectric layer DI is formed over the debonding layer DB. In
some embodiments, the dielectric layer DI is a polymer layer. The
polymer includes, for example, polybenzoxazole (PBO), polyimide,
benzocyclobutene (BCB), Ajinomoto Buildup Film (ABF), Solder Resist
film (SR) or the like. The dielectric layer DI is formed by a
suitable fabrication technique such as spin-coating, lamination,
deposition or the like. In some embodiments, each of the first dies
100 is attached to the dielectric layer DI with a die attach film
DAF disposed therebetween. In alternative embodiments, the
operation of forming the dielectric layer DI can be omitted, and
each of the first dies 100 is attached to the debonding layer DB
with a die attach film DAF therebetween.
[0012] Thereafter, a pre-molding layer 107 is formed over the first
dies 100. Specifically, the pre-molding layer 107 is formed on a
top surface of the dielectric layer DI and encapsulates the tops
and sidewalls of the first dies 100. In some embodiments, the
pre-molding layer 107 includes a molding compound, a molding
underfill, a resin or the like, such as epoxy. The pre-molding
layer 107 may be formed by a suitable fabrication technique such as
spin-coating, lamination, deposition or the like. In some
embodiments, the pre-molding layer 107 includes a photo-sensitive
material such as polybenzoxazole (PBO), polyimide, benzocyclobutene
(BCB), a combination thereof, or the like. In alternative
embodiments, the molding layer 108 includes a nitride such as
silicon nitride, an oxide such as silicon oxide, phosphosilicate
glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate
glass (BPSG), a combination thereof, or the like.
[0013] Referring to FIG. 1B and FIG. 1C, the pre-molding layer 107
is molded to form a molding layer 108 with one or more first
openings O1 therein. In some embodiments, the first openings O1 do
not penetrate through the molding layer 108. In some embodiments, a
mold M of a molding machine is pressed against the molding layer
108 to define a plurality of first openings Olin the molding layer
108, as shown in FIG. 1B. The mold M includes a mold chest and a
plurality of mold pins protruded from a contacting surface of the
mold chest. The shape of the mold pins corresponds to the shape of
the subsequently formed through integrated fan-out vias (TIV). In
some embodiments, the mold pins of the mold M have inclined
sidewalls. For example, the cross-sectional area of each of the
mold pins is gradually decreased away from the mold chest of the
mold M. In alternative embodiments, the mold pins of the mold M
have substantially vertical sidewalls perpendicular to the
contacting surface of the mold chest. In some embodiments, the
height of the mold pins is less than the height of the molding
layer 108, so the formed first openings O1 do not penetrate through
the molding layer 108. After the first openings O1 are formed in
the molding layer 108, the mold M is lifted up, as shown in FIG.
1C. Specifically, the first openings O1 extend into the molding
layer 108 from the front sides to the back sides of the first dies
100. In some embodiments, the first openings O1 have inclined
sidewalls. For example, the cross-sectional area of each of the
first openings O1 is gradually decreased towards the back sides or
second sides of the first dies 100. In alternative embodiments, the
first openings O1 have substantially vertical sidewalls
perpendicular to a front surface of the molding layer 108.
[0014] In some embodiments, during the step in FIG. 1B, the mold M
with the molding layer 108 are heated for a period of time, so as
to semi-cure the molding layer 108. After the mold M is lifted up,
as shown in Figure 1C, the semi-cured molding layer 108 is heated
for another period of time, so as to fully cure the material layer
108.
[0015] Referring to FIG. 1D, a glue material layer 109, a seed
material layer 110 and a metal material layer 112 are formed on the
surfaces of the first openings O1. Specifically, the glue material
layer 109, the seed material layer 110 and the metal material layer
112 are sequentially formed over the molding layer 108 and cover
the entire surfaces of the first openings O1. In some embodiments,
the glue material layer 109 helps to adhere the molding layer 108
to the subsequently formed seed material layer 110. The glue
material layer 109 may include a titanium-based or tantalum-based
material, such as titanium, titanium nitride, tantalum, tantalum
nitride, a combination thereof, or the like, and may be formed
through a process such as PVD, CVD, sputtering or the like,
although other methods and materials may alternatively be used. The
seed material layer 110 may be deposited by PVD, CVD, sputtering or
the like, although other methods may alternatively be used. The
seed material layer 110 may include a copper-based material such as
copper, a titanium copper alloy or the like, although other
materials (e.g., nickel, gold) may alternatively be used. The metal
material layer 112 may include a copper-based material such as
copper, a copper-based alloy or the like, although another suitable
material such as nickel, titanium, aluminum or the like, may
alternatively be utilized. The metal material layer 112 may be
formed by electroplating copper onto the seed material layer 110,
although any suitable alternative process for forming the metal
material layer 112 may alternatively be utilized. In some
embodiments, the glue material layer 109, the seed material layer
110 and the metal material layer 112 together completely fill up
the first openings O1.
[0016] In some embodiments, the glue material layer 109 is in
physical contact with the molding layer 108, as shown in FIG. 1D.
In alternative embodiments, the operation of forming the glue
material layer 109 can be omitted, and the seed material layer 110
is formed directly on the molding layer 108.
[0017] Referring to FIG. 1E, the molding layer 108 is ground from
the front sides or first sides of the first dies 100 until the
connectors 104 of the first dies 100 are exposed. In some
embodiments, a grinding process is performed to remove a portion of
the molding layer 108 and a portion of the passivation layer 106.
During the grinding process, portions of the glue material layer
109, the seed material layer 110 and the metal material layer 112
outside of the first openings O1 are simultaneously removed, so as
to form the through integrated fan-out vias TIV.
[0018] Referring to FIG. 1F, a redistribution layer structure 114
is formed over the first sides of the first dies 100. In some
embodiments, the redistribution layer structure 114 is electrically
connected to the connectors 104 of the first dies 100 and the metal
material layer 112 in the first openings O1. The redistribution
layer structure 114 may also be referred to as a "front-side
redistribution layer structure" throughout the specification. In
some embodiments, the redistribution layer structure 114 includes a
plurality of polymer layers and a plurality of redistribution
layers stacked alternately. The number of the polymer layers or the
redistribution layers is not limited by the disclosure. In some
embodiments, the topmost redistribution layer is also called an
under-ball metallurgy (UBM) layer for ball mount. In some
embodiments, each of the polymer layers includes polybenzoxazole
(PBO), polyimide, benzocyclobutene (BCB), a combination thereof, or
the like. In some embodiments, each of the redistribution layers
includes copper, nickel, titanium, a combination thereof, or the
like, and is formed by an electroplating process.
[0019] Thereafter, balls or bumps 116 are formed over and
electrically connected to the redistribution layer structure 114.
In some embodiments, the bumps 116 are made of a conductive
material with low resistivity, such as Sn, Pb, Ag, Cu, Ni, Bi or an
alloy thereof, and are formed by a suitable process such as
evaporation, plating, ball drop, or screen printing.
[0020] Referring to FIG. 1G, the carrier C is debonded. In some
embodiments, the carrier C with the first dies 100, the molding
layer 108, the redistribution layer structure 114 and the bumps 116
is turned over, the debonding layer DB is decomposed under heat of
light, and the carrier C is then released from the back sides or
second sides of the first dies 100.
[0021] Referring to FIG. 1H and FIG. 11, second dies 200 are
electrically connected to or bonded to the first dies 100 from the
back sides or second sides of the first dies 100. In some
embodiments, each of the second dies 200 includes a memory device
or a suitable semiconductor device. As shown in FIG. 1H, a
patterning process is performed to the molding layer 108 from the
back sides or second sides of the first dies 100, so as to form
second openings O2 corresponding to the first openings O1. In some
embodiments, portions of the dielectric layer DI, the glue material
layer 109 and the seed material layer 110 are simultaneously
removed during the patterning process. Specifically, the second
openings O2 penetrate through the dielectric layer DI, the molding
layer 108, the glue material layer 109 and the seed material layer
110 and expose the metal material layer 112 in the first openings
O1. In some embodiments, the patterning process includes a laser
drilling process. In some embodiments, after the laser drilling
process, a treatment is performed from the back sides or second
sides of the first dies 100, so the residues caused by the laser
drilling process and/or the exposed glue material layer 109 or seed
material layer 110 (if not removed by the laser drilling process)
are removed to expose the metal material layer 112 in the first
openings O1. In some embodiments, the treatment includes a plasma
cleaning process, a dry etching process or the like.
[0022] In some embodiments, the second openings O2 have inclined
sidewalls. For example, the cross-sectional area of each of the
second openings O2 is gradually decreased towards the back sides or
second sides of the first dies 100. In alternative embodiments, the
second openings O2 have substantially vertical sidewalls
perpendicular to a back surface of the molding layer 108.
[0023] Thereafter, the second dies 200 are provided over the back
sides or second sides of the first dies 100. In some embodiments,
each of the second dies 200 includes a substrate 202, a plurality
of pads 204 and a plurality of bumps 206. The second dies 200 are
electrically connected to or bonded to the first dies 100, from the
back sides of the first dies 100, with the bumps 206 filling into
the second openings O2. Specifically, the bumps 206 of the second
dies 200 are aligned and filled into the second openings O2 in the
dielectric layer DI and the molding layer 108, and are bonded to
the through integrated fan-out vias TIV. In some embodiments, each
of the through integrated fan- out vias TIV includes a glue layer
109a, a seed layer 110a and a metal layer 112a. The seed layer 110a
is between the glue layer 109a and the metal layer 112a.
[0024] Thereafter, an underfill layer UF is formed to fill the
space between the first dies 100 and the second dies 200 and to
surround the bumps 206. In some embodiments, the underfill layer UF
includes a molding compound such as epoxy, and is formed using
dispensing, injecting, and/or spraying.
[0025] Referring to FIG. 1J, a singulation process is performed to
separate integrated fan-out packages 10 (or called PoP packages in
some embodiments) from each other. In some embodiments, the
semiconductor device is singulated through the underfill layer UF,
the dielectric layer DI, the molding layer 108 and the polymer
layers of the redistribution structure 114, using a saw blade or
laser cutting tool, to separate the individual integrated fan-out
packages 10.
[0026] The above embodiments in which a laser drilling process is
performed before bonding the second dies to the first dies are
provided for illustration purposes, and are not construed as
limiting the present disclosure. In alternative embodiments, the
laser drilling process can be omitted to further simplify the
process.
[0027] FIG. 2A to FIG. 2J are cross-sectional views of a method of
forming an integrated fan-out package in accordance with
alternative embodiments. The method of FIG. 2A to FIG. 2J is
similar to the method of FIG. 1A to FIG. 1J. Is may be noted that
the difference between the embodiments will be described further in
detail below.
[0028] Referring to FIG. 2A, a carrier C having a die attach film
DAF thereon is provided. Specifically, the carrier C is provided
with a debonding layer DB, a dielectric layer DI and the die attach
film DAF sequentially formed thereon. In some embodiments, the die
attach film DAF is a blanket die attach film that covers the entire
surface of the dielectric layer DI.
[0029] Referring to FIG. 2B, one or more first dies 100 are placed
on the die attach film DAF. In some embodiments, the first dies 100
are picked and placed on the die attach film DAF over the carrier
C. Thereafter, a pre-molding layer 107 is formed over the first
dies 100. Specifically, the pre-molding layer 107 is formed on the
surface of the die attach film DAF and encapsulates the tops and
sidewalls of the first dies 100.
[0030] Referring to FIG. 2C and FIG. 2D, the pre-molding layer 107
is molded to form a molding layer 108 with one or more first
openings O1 therein. In some embodiments, the first openings O1
penetrate through the molding layer 108. In some embodiments, a
mold M of a molding machine is pressed against the molding layer
108 to define a plurality of first openings Olin the molding layer
108, as shown in FIG. 2C. The mold M includes a mold chest and a
plurality of mold pins protruded from the surface of the mold
chest. In some embodiments, the height of the mold pins is
substantially equal to or slightly greater than the height of the
molding layer 108, so the formed first openings O1 penetrate
through the molding layer 108 and are in physical contact with the
die attach film DAF. After the first openings O1 are formed in the
molding layer 108, the mold M is lifted up, as shown in FIG.
2D.
[0031] Referring to FIG. 2E, a glue material layer 109, a seed
material layer 110 and a metal material layer 112 are formed on the
surfaces of the first openings O1. In some embodiments, the glue
material layer 109 is in physical contact with the molding layer
108, as shown in FIG. 2E. In alternative embodiments, the operation
of forming the glue material layer 109 can be omitted, and the seed
material layer 110 is formed directly on the molding layer 108.
[0032] Referring to FIG. 2F, the molding layer 108 is grounded from
the front sides or first sides of the first dies 100 until the
connectors 104 of the first dies 100 are exposed.
[0033] Referring to FIG. 2G, a redistribution layer structure 114
is formed over the front sides or first sides of the first dies
100. Thereafter, bumps 116 are formed over and electrically
connected to the redistribution layer structure 114.
[0034] Referring to FIG. 2H, the carrier C is debonded. In some
embodiments, the debonding layer DB is decomposed under heat of
light, and the carrier C is then released from the back sides or
second sides of the first dies 100.
[0035] Thereafter, the die attach film DAF is removed to expose the
glue material layer 109. In some embodiments, the removing
operation includes performing a dry etching process and a wet
etching process. In some embodiments, the dielectric layer DI is
simultaneously removed during the removing operation.
[0036] Afterwards, a treatment is performed from the back sides or
second sides of the first dies 100, so the exposed glue material
layer 109 and seed material layer 110 are removed to expose the
metal material layer 112 in the first openings O1. In some
embodiments, the treatment includes a plasma cleaning process, a
dry etching process or the like.
[0037] Referring to FIG. 2I, second dies 200 are electrically
connected to or bonded to the first dies 100 from the back sides or
second sides of the first dies 100. Specifically, the second dies
200 are bonded to the first dies 100, from the back sides of the
first dies 100, with the bumps 206 and the through integrated
fan-out vias TIV. In some embodiments, each of the through
integrated fan-out vias TIV includes a glue layer 109a, a seed
layer 110a and a metal layer 112a. The seed layer 110a is between
the glue layer 109a and the metal layer 112a. Thereafter, an
underfill layer UF is formed to fill the space between the first
dies 100 and the second dies 200 and to surround the bumps 206.
[0038] Referring to FIG. 2J, a singulation process is performed to
separate integrated fan-out packages 20 (or called PoP packages in
some embodiments) from each other.
[0039] The structures of the integrated fan-out packages are
illustrated below with reference to FIG. 1J and FIG. 2J. An
integrated fan-out package 10/20 includes a first die 100, at least
one through integrated fan-out via TIV and a molding layer 108. The
at least one through integrated fan-out via TIV is aside the first
die 100. In some embodiments, the through integrated fan-out via
TIV includes a glue layer 109a, a seed layer 110a and a metal layer
112a. In alternative embodiments, the through integrated fan-out
via TIV includes a seed layer 110a and a metal layer 112a. In some
embodiments, the glue layer 109a includes a titanium-based or
tantalum-based material, the seed layer 110a includes a
copper-based material, and the metal layer 112a includes a
copper-based material. The molding layer 108 encapsulates or
surrounds the sidewall of the at least one through integrated
fan-out via TIV and the sidewall of the first die 100. The seed
layer 110a is between the metal layer 112a and the molding layer
108 and surrounds the entire sidewall of the metal layer 112a. In
some embodiments, the glue layer 109a is between and in physical
contact with the seed layer 110a and the molding layer 108. In
alternative embodiments, the seed layer 110a is between and in
physical contact with the metal layer 112a and the molding layer
108.
[0040] In some embodiments, the surface of the molding layer 108 is
not flush with the surface of the at least one through integrated
fan-out via TIV. In some embodiments, the molding layer 108 further
covers a portion of the top surface of the at least one through
integrated fan-out via TIV, as shown in FIG. 1J. From another point
of view, the molding layer 108 forms a hooking structure that
embraces the edge portion of the through integrated fan-out via
TIV, and the optional glue layer 109a and the seed layer 110a have
a turning point around the edge portion of the through integrated
fan-out via TIV.
[0041] In alternative embodiments, the surface of the molding layer
108 is flush with the surface of the at least one through
integrated fan-out via TIV, as shown in FIG. 2J.
[0042] The integrated fan-out package 10/20 further includes a
redistribution layer structure 114 and a second die 200. The
redistribution layer structure 114 is at the front side or first
side of the first die 100 and is electrically connected to the
first die 100. The second die 200 is at the back side or second
side of the first die 100. The second die 200 includes at least one
bump 206 and is electrically connected to or bonded to the first
die 100 through the at least one through integrated fan-out via TIV
and the at least one bump 206. In some embodiments, a portion of
the at least one bump 206 is embedded by the molding layer 108.
Specifically, the at least one bump 206 extends into a portion of
the molding layer 108 and is electrically connected to the metal
layer 112a of the at least one through integrated fan-out via TIV.
In some embodiments, the cross-sectional area of the at least one
through integrated fan-out via TIV is gradually reduced towards the
at least one bump 206. In alternative embodiments, the
cross-sectional area of the at least one through integrated fan-out
via TIV is substantially unchanged.
[0043] The integrated fan-out package 10/20 further includes an
underfill layer UF between the first die 100 and the second die 200
and around the at least one bump 206. In some embodiments, a die
attach film DAF is between the first die 100 and the underfill
layer UF, as shown in FIG. 1J. A dielectric layer DI may be
optionally disposed between the die attach film DAF and the
underfill layer UF.
[0044] In alternative embodiments, a die attach film is not present
between the first die 100 and the underfill layer UF, as shown in
FIG. 2J. Specifically, the underfill layer UF is in physical
contact with the molding layer 108 without a dielectric layer
therebetween.
[0045] In view of the above, the TIV patterns (e.g., the patterns
each including a glue material layer 109, a seed material layer 110
and a metal material layer 112 as shown in FIG. 1E) of the
disclosure are defined by molding a molding layer, with a mold
chest having TIV pattern pins, to form TIV openings therein, and
then forming a seed layer and plating a metal layer in the TIV
openings. By such sequence, some conventional operations such as
the operation of forming a dry resist film strip before plating a
metal layer and the operation of removing the dry resist film strip
and the underlying seed layer after plating the metal layer can be
omitted. In other words, a dry resist film is not required during
the formation of the TIV patterns of the disclosure. Therefore, the
process of defining TIV patterns is significantly simplified, and
the production cost is greatly reduced.
[0046] In accordance with some embodiments of the present
disclosure, an integrated fan-out package includes a first die, at
least one through integrated fan-out via and a molding layer. The
at least one through integrated fan-out via is aside the first die
and includes a seed layer and a metal layer. The molding layer
encapsulates the at least one through integrated fan-out via and
the first die. Besides, the seed layer surrounds a sidewall of the
metal layer and is between the metal layer and the molding
layer.
[0047] In accordance with alternative embodiments of the present
disclosure, a method of forming an integrated fan-out package
includes the following operations. A first die is placed on a
carrier. A molding layer is formed over the first die, wherein at
least one first opening is formed in the molding layer and the
first opening does not penetrate through the molding layer. A seed
material layer and a metal material layer are formed on a surface
of the first opening.
[0048] In accordance with yet alternative embodiments of the
present disclosure, a method of forming an integrated fan-out
package includes the following operations. A carrier having a die
attach film thereon is provided. A first die is placed on the die
attach film. A molding layer is formed over the first die, wherein
at least one first opening is formed in the molding layer and the
first opening penetrates through the molding layer and is in
physical contact with the die attach film. A seed material layer
and a metal material layer are formed on a surface of the first
opening.
[0049] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
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