U.S. patent application number 15/605987 was filed with the patent office on 2018-11-29 for interconnection structure and method for forming the same.
The applicant listed for this patent is TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.. Invention is credited to Yu-Chen CHAN, Ming-Han LEE, Shin-Yi YANG.
Application Number | 20180342459 15/605987 |
Document ID | / |
Family ID | 64315594 |
Filed Date | 2018-11-29 |
United States Patent
Application |
20180342459 |
Kind Code |
A1 |
CHAN; Yu-Chen ; et
al. |
November 29, 2018 |
INTERCONNECTION STRUCTURE AND METHOD FOR FORMING THE SAME
Abstract
A method of forming an interconnection structure includes
forming a dielectric structure over a non-insulator structure;
forming a hole in the dielectric structure to expose the
non-insulator structure; forming a first diffusion barrier layer
into the hole in the dielectric structure using a first deposition
process; forming a second diffusion barrier layer over the first
diffusion barrier layer using a second deposition process that is
different from the first deposition process; and forming a metal
over the second diffusion barrier layer.
Inventors: |
CHAN; Yu-Chen; (Taichung
City, TW) ; YANG; Shin-Yi; (New Taipei City, TW)
; LEE; Ming-Han; (Taipei City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
Hsinchu |
|
TW |
|
|
Family ID: |
64315594 |
Appl. No.: |
15/605987 |
Filed: |
May 26, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/76802 20130101;
H01L 23/53223 20130101; H01L 23/5283 20130101; H01L 21/76807
20130101; H01L 23/53238 20130101; H01L 21/28562 20130101; H01L
21/76832 20130101; H01L 23/53266 20130101; H01L 23/53295 20130101;
H01L 21/76829 20130101; H01L 21/76879 20130101; H01L 21/2855
20130101; H01L 21/76844 20130101 |
International
Class: |
H01L 23/528 20060101
H01L023/528; H01L 21/768 20060101 H01L021/768; H01L 23/532 20060101
H01L023/532 |
Claims
1. A method of forming an interconnection structure, comprising:
forming a dielectric structure over a non-insulator structure;
forming a hole in the dielectric structure to expose the
non-insulator structure; forming a first diffusion barrier layer
into the hole in the dielectric structure using a first deposition
process; forming a second diffusion barrier layer over the first
diffusion barrier layer using a second deposition process that is
different from the first deposition process; removing a first
portion of the second diffusion barrier layer from a bottom of the
hole; and forming a metal over the first diffusion barrier
layer.
2. The method of claim 1, wherein the forming the hole forms a
lateral recess in a sidewall of the dielectric structure, and
wherein the first diffusion barrier layer is formed into the
lateral recess.
3. The method of claim 2, wherein the lateral recess in the
sidewall of the dielectric structure is filled with the first
diffusion barrier layer.
4. The method of claim 2, wherein the second diffusion barrier
layer does not extend into the lateral recess in the sidewall of
the dielectric structure.
5. The method of claim 1, wherein the first diffusion barrier layer
is formed without an overhang.
6. The method of claim 1, wherein the second diffusion barrier
layer is formed without an overhang.
7. The method of claim 1, wherein the second diffusion barrier
layer has higher adhesion to the metal than that of the first
diffusion barrier layer.
8. The method of claim 1, wherein the first diffusion barrier layer
and the second diffusion barrier layer are formed with different
contours.
9. The method of claim 1, wherein a second portion of the second
diffusion barrier layer remains on a sidewall of the hole after
removing the first portion of the second diffusion barrier
layer.
10. The method of claim 9, wherein the first diffusion barrier
layer has higher etch resistance to an etchant used in the removing
than that of the second diffusion barrier layer.
11. A method of forming an interconnection structure, comprising:
forming a dielectric structure over a non-insulator structure;
forming a hole in the dielectric structure to expose the
non-insulator structure; forming a first diffusion barrier layer
into the hole in the dielectric structure without ion bombardment;
forming a second diffusion barrier layer over the first diffusion
barrier layer using a deposition process comprising ion
bombardment; etching the second diffusion barrier layer; and
forming a conductive feature over the etched second diffusion
barrier layer.
12. The method of claim 11, wherein the deposition process
comprising ion bombardment is a non-conformal deposition
process.
13. The method of claim 11, wherein the forming the first diffusion
barrier layer comprises a conformal deposition process.
14. The method of claim 11, wherein the deposition process
comprising ion bombardment is a physical vapor deposition
process.
15. The method of claim 11, wherein the forming the first diffusion
barrier layer comprises a chemical vapor deposition process or an
atomic layer deposition process.
16. The method of claim 11, wherein etching the second diffusion
barrier layer comprises performing an anisotropic etching process
to the second diffusion barrier layer.
17. The method of claim 16, wherein the first diffusion barrier
layer has higher etch resistance to the anisotropic etching process
than that of the second diffusion barrier layer.
18. An interconnection structure, comprising: a non-insulator
structure; a dielectric structure over the non-insulator structure;
a metal over the non-insulator structure; and a first diffusion
barrier having a first portion between a bottom of the metal and
the non-insulator structure, a second portion between a sidewall of
the metal and the dielectric structure, and a protrusion protruding
from an outer sidewall of the second portion and in contact with
the non-insulator structure.
19. The interconnection structure of claim 18, further comprising:
a second diffusion barrier between the first diffusion barrier and
the metal, the second diffusion barrier has higher adhesion to the
metal than that of the first diffusion barrier.
20. The interconnection structure of claim 19, wherein the first
diffusion barrier has a second portion between the non-insulator
structure and the metal, and the second diffusion barrier is not
between the second portion and the metal.
Description
BACKGROUND
[0001] The semiconductor integrated circuit (IC) industry has
experienced rapid growth in the past several decades. Technological
advances in semiconductor materials and design have produced
increasingly smaller and more complex circuits. These material and
design advances have been made possible as the technologies related
to processing and manufacturing have also undergone technical
advances. As a size of the smallest component has decreased,
numerous challenges have risen. For example, interconnection of
conductive lines and associated dielectric materials that
facilitate wiring between the transistors and other devices play a
role in IC performance improvement.
BRIEF DESCRIPTION OF THE DRAWINGS
[0002] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is noted that, in accordance with the standard practice
in the industry, various features are not drawn to scale. In fact,
the dimensions of the various features may be arbitrarily increased
or reduced for clarity of discussion.
[0003] FIG. 1 is a flow chart of a method for forming an
interconnection structure according to some embodiments of the
present disclosure.
[0004] FIGS. 2 to 11 are cross-sectional views of intermediate
stages in the formation of an interconnection structure according
to some embodiments of the present disclosure.
[0005] FIG. 12 is a cross-sectional view of an intermediate stage
in the formation of an interconnection structure according to some
embodiments of the present disclosure.
DETAILED DESCRIPTION
[0006] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the first and second
features, such that the first and second features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0007] Further, spatially relative terms, such as "beneath,"
"below," "lower," "above," "upper" and the like, may be used herein
for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0008] FIG. 1 is a flow chart of a method 100 for forming an
interconnection structure according to some embodiments of the
present disclosure. FIGS. 2 to 9 are cross-sectional views of
intermediate stages in the formation of an interconnection
structure according to some embodiments of the present disclosure.
Various operations 102 to 120 of the method 100 are discussed in
association with FIGS. 2-11.
[0009] In operation 102 of method 100 as shown in FIG. 2, an etch
stop layer (ESL) 220 is formed over a non-insulator structure 210.
Herein, the non-insulator structure 210 is embedded in an insulator
structure 212. The insulator structure 212 may be an interlayer
dielectric (ILD) layer that includes a dielectric material. The
dielectric material may include tetrathoxysilane (TEOS), an extreme
low-k (ELK) dielectric material, nitrogen-free anti-reflective
coating (NFARC), silicon oxide, silicon nitride, silicon
oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass
(BPSG), spin-on glass (SOG), fluorinated silica glass (FSG), carbon
doped silicon oxide (e.g., SiCOH), Xerogel, Aerogel, amorphous
fluorinated carbon, parylene, BCB (bis-benzocyclobutenes),
polyimide, or any combination thereof. The ELK dielectric material
has a dielectric constant less than, for example, about 2.5. It is
understood that the insulator structure 212 may include one or more
dielectric materials and/or one or more dielectric layers. In some
embodiments, the insulator structure 212 may be deposited by
chemical vapor deposition (CVD), high density plasma (HDP) CVD,
sub-atmospheric CVD (SACVD), spin-on coating, sputtering, or other
suitable techniques.
[0010] The non-insulator structure 210 refers to a structure formed
of one or more non-insulator materials, polysilicon, metal,
conductive materials, semiconductor materials or combinations
thereof. The non-insulator structure 210 can serve as a conductive
line or a conductive via of an interconnect structure, or a gate
electrode or a source/drain region of a semiconductor device, such
as a fin field effect transistor (FinFET).
[0011] In some embodiments, when the non-insulator structure 210
serves as the conductive line or the conductive via of the
interconnect structure, the non-insulator structure 210 may include
a conductive material such as copper, although other materials,
such as tungsten, aluminum, gold, or the like, can alternatively be
utilized. In some embodiments in which the non-insulator structure
210 is formed of copper, the non-insulator structure 210 may be
deposited by electroplating techniques, although any method of
formation can alternatively be used.
[0012] In some embodiments, when the non-insulator structure 210
serves as the gate electrode of the FinFET, the non-insulator
structure 210 may be formed by a gate last process. An exemplary
gate last process may include forming a dummy gate structure
including a material, such as polysilicon, on a semiconductor fin,
forming spacers including a material, such as silicon oxide,
silicon nitride, silicon oxynitride, silicon carbide, beside the
dummy gate structure, removing the dummy gate structure to form a
trench between the spacers, and forming at least one metal layer
into the trench between the spacers to from the non-insulator
structure 210. The metal layer may include a metal material
suitable for forming the gate electrode or a portion thereof,
including, work function layers, liner layers, interface layers,
seed layers, adhesion layers, barrier layers and so on. In some
embodiments, the metal layer may include suitable metal, such as
TiN, WN, TaN, or Ru, which performs in a p-type FinFET. In some
alternative embodiments, the metal layer may include suitable
metal, such as Ti, Ag, Al, TiAl, TiAlN, TiAlC, TiAlCN, TaC, TaCN,
TaSiN, Mn, or Zr, which performs in an n-type FinFET.
[0013] In some embodiments, when the non-insulator structure 210
serves as the source/drain region, an exemplary formation process
may include doping an n-type dopant, such as phosphorous, or a
p-type dopant, such as boron, into at least one portion of the
semiconductor fin not covered by the spacers and the gate electrode
by using ion implantation. Another exemplary process of forming the
source/drain region may include forming at least one source/drain
recess in the fin adjacent to the spacer, forming a seed layer in
the source/drain recess, forming a relaxed epitaxial layer on the
seed layer in the source/drain recess, forming an epitaxial layer
on the relaxed epitaxial layer in the source/drain recess, so that
the seed layer, the relaxed epitaxial layer and the epitaxial layer
form a source/drain stressor to serve as the source/drain region.
In some embodiments, the source/drain stressor includes, for
example, SiP, SiP or SiCP, which is able to induce a tensile strain
to the n-type channel in the semiconductor fin. In some other
embodiments, the source/drain stressor includes SiGe, which is able
to induce a compressive strain to the p-type channel in the
semiconductor fin.
[0014] The etch stop layer 220 may protect the non-insulator
structure 210 and the insulator structure 212 during an etching
process of forming a via opening, an etching process of forming a
trench opening or both of them. In some embodiments, the etch stop
layer 220 may include a dielectric material, such as silicon
carbide, silicon nitride or carbon-doped silicon nitride. In some
embodiments, the etch stop layer 220 may include a conductive
material, such as Ti, TiN, TiC, TiCN, Ta, TaN, TaC, TaCN, W, WN,
WC, WCN, TiAl, TiAlN, TiAlC, or TiAlCN. In some embodiments, the
etch stop layer 220 may be deposited using chemical vapor
deposition (CVD), high density plasma (HDP) CVD, sub-atmospheric
CVD (SACVD), molecular layer deposition (MLD), sputtering, physical
vapor deposition (PVD), plating, or other suitable techniques. For
example, in some embodiments, the MLD process is carried out under
a pressure less than about 10 mTorr and in the temperature range
from about 350.degree. C. to about 500.degree. C. In some
embodiments, the silicon nitride is deposited on the top surface of
the non-insulator structure 210 by reacting a silicon source
compound and a nitrogen source. The silicon source compound
provides silicon to the deposited silicon nitride and may include
silane (SiH.sub.4) or tetrathoxysilane (TEOS). The nitrogen source
provides nitrogen to the deposited silicon nitride and may include
ammonia (NH.sub.3) or nitrogen gas (N.sub.2). In some other
embodiments, the carbon-doped silicon nitride is deposited on the
top surface of the non-insulator structure 210 by reacting a carbon
source compound, a silicon source compound, and a nitrogen source.
The carbon source compound may include an organic compound, such as
a hydrocarbon compound, e.g., ethylene (C.sub.2H.sub.6).
[0015] In operation 104 of method 100 as shown in FIG. 3, a
dielectric layer 230 is formed over the etch stop layer 220. In
other words, the etch stop layer 220 is present between the
dielectric layer 230 and the non-insulator structure 210. The
dielectric layer 230 may be an interlayer dielectric (ILD) layer
that includes a dielectric material. The dielectric material may
include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric
material, nitrogen-free anti-reflective coating (NFARC), silicon
oxide, silicon nitride, silicon oxynitride, phosphosilicate glass
(PSG), borophosphosilicate glass (BPSG), spin-on glass (SOG),
fluorinated silica glass (FSG), carbon doped silicon oxide (e.g.,
SiCOH), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene,
BCB (bis-benzocyclobutenes), polyimide, or any combination thereof.
The ELK dielectric material has a dielectric constant less than,
for example, about 2.5. It is understood that the dielectric layer
230 may include one or more dielectric materials and/or one or more
dielectric layers. In some embodiments, the dielectric layer 230
may be deposited on the etch stop layer 220 by CVD, HDP CVD, SACVD,
spin-on, sputtering, or other suitable techniques. The etch stop
layer 220 and the dielectric layer 230 can be in combination
referred to as a dielectric structure DS over the non-insulator
structure 210.
[0016] Then, an anti-reflection layer 240 is optionally formed over
the dielectric structure DS. The anti-reflection layer 240 may be
formed of a nitride material, an organic material, an oxide
material and the like. The anti-reflection layer 240 may be formed
by using suitable techniques, such as CVD. In alternative
embodiments, the anti-reflection layer 240 may be omitted.
[0017] In operation 106 of method 100 as shown in FIG. 4, an
etching process is performed to the dielectric layer 230 to form
recesses 232 therein, in which the etch stop layer 220 is not
exposed in the recess 232. To be specific, portions of the
anti-reflection layer 240 and the dielectric layer 230 are removed,
so as to form the recesses 232 in the dielectric layer 230. In some
embodiments, the dielectric layer 230 is recessed until reaching a
level above the etch stop layer 220. Stated differently, the
etching process does not etch through the dielectric layer 230 to
expose the etch stop layer 220. An exemplary formation process of
the recess 232 is described as follows.
[0018] A photoresist layer (not shown) may be formed over the
anti-reflection layer 240 and then patterned to form a photoresist
mask with the image of the recess 232. Using the photoresist layer
as a mask, the pattern of the recess 232 is then etched into the
dielectric layer 230. After the etching process, the photoresist
mask is removed by, for example, oxygen plasma ashing. The etching
process of forming the recess 232 is stopped before the etch stop
layer 220 is exposed, so that a portion of the dielectric layer 230
remains between the recess 232 and the etch stop layer 220 at this
step. In some embodiments, the etching process may be a dry
etching, wet etching and/or plasma etching process. For example,
the etching process of forming the recess 232 may employ a mixture
of tetrafluoromethane (CF.sub.4), trifluoromethane (CHF.sub.3) and
oxygen as the etching gases.
[0019] In operation 108 of method 100 as shown in FIG. 5, an
etching process is performed to deepen at least one of the recesses
232 over the non-insulator structure 210, so that a hole 234 is
formed in the dielectric layer 230 and over the non-insulator
structure 210. Other recesses 232 can be protected using a suitable
mask, such as a photoresist mask PR, during this etching process.
The etch stop layer 220 is exposed at a bottom of the hole 234. In
a greater detail, a portion of the dielectric layer 230 underlying
the recess 232 in FIG. 4 is removed to form the hole 234 that
exposes the etch stop layer 220. In other words, the recess 232 is
deepened until reaching the etch stop layer 220. The removal
process can be an etching process, such as, an anisotropic etching
process. The anisotropic etching process can be, for example, a
CF.sub.4 based or octafluorocyclobutane (C.sub.4F.sub.8) based dry
etching process.
[0020] In some embodiments, the etch stop layer 220 and the
dielectric layer 230 have different etch resistance properties. An
etch resistance of the etch stop layer 220 to an etchant used in
the removing the portion of the dielectric layer 230 may be greater
than that of the dielectric layer 230. Therefore, the etching
process is slowed down or stopped by the etch stop layer 220.
[0021] In operation 110 of method 100 as shown in FIG. 6, a portion
of the etch stop layer 220 underlying the hole 234 is removed to
form an hole 222 using an etching process, which allows
non-insulator structure 210 to be exposed. The etching process may
be a wet etching, a dry etching or combinations thereof. The hole
222 of the etch stop layer 220 is in communication with the hole
234 of the dielectric layer 230, and the hole 222 of the etch stop
layer 220 and the hole 234 of the dielectric layer 230 can be in
combination referred to as a hole of the dielectric structure DS.
After the etching process, a cleaning operation is performed to
remove byproducts or residues remained in the hole of the
dielectric structure DS. In some embodiments, the etching and/or
the cleaning operations may lead to lateral etching of portions of
the etch stop layer 220, such that lateral recesses 222a are formed
in sidewalls 222c of the hole 222 of the etch stop layer 220.
[0022] In operation 112 of method 100 as shown in FIG. 7, after the
photoresist mask PR is removed, a first diffusion barrier layer 250
is blanket formed over the dielectric layer 230. Herein, the first
diffusion barrier layer 250 is formed on the exposed surface of the
non-insulator structure 210 and formed into the hole 222 of etch
stop layer 220, the recesses 232 and the hole 234 of the dielectric
layer 230. The first diffusion barrier layer 250 covers the exposed
surface of the non-insulator structure 210. Because of the
covering, the oxidation occurring on the exposed surface of the
non-insulator structure 210 is avoided. Due to the low reactivity
with oxygen for the first diffusion barrier layer 250, oxidation
occurring on the surface of the first diffusion barrier layer 250
is less serious. The first diffusion barrier layer 250 can be a
metal film which is less reactive to oxygen than the non-insulator
structure 210. The first diffusion barrier layer 250 can be a film
such as TiN, CrN, TaN, HfN, NbN, ZrN, VN, MnN, WN, CuSix, amorphous
carbon, graphene, or a combination film thereof.
[0023] In some embodiments, the first diffusion barrier layer 250
is formed by a deposition process without ion bombardment, such
that the non-insulator structure 210 and the insulator structure
212 do not experience a high-energy particle bombardment during the
deposition of the first diffusion barrier layer 250. In some
embodiments, the method of forming the first diffusion barrier
layer 250 may include a conformal deposition process without ion
bombardment, such as a chemical vapor deposition (CVD) process, an
atomic layer deposition (ALD) process or a combination thereof,
instead of a non-conformal deposition process, such as a physical
vapor deposition (PVD). ALD is a gas phase chemical process and it
is a self-limiting atomic layer-by-layer growth method. The
surface-controlled growth mechanism of ALD provides good step
coverage and dense films with few (or no) pinholes. Therefore, the
first diffusion barrier layer 250 is formed without an overhang, in
which the overhang is a projection or extension of the deposited
layer 250 that extends over the hole 234 and is unfavorable for
shrinkage of the semiconductor device. The precision achieved with
ALD allows processing of extremely thin films in a controlled way
in the nanometer scale. For example, the first diffusion barrier
layer 250 is formed to be from about 5 angstroms to about 100
angstroms.
[0024] In some embodiments, the first diffusion barrier layer 250
covers the bottom 222b and the sidewalls 222c. Due to the conformal
deposition, the first diffusion barrier layer 250 is formed into
the lateral recesses 222a, thereby improving the reliability
performance and increasing a contact area between the non-insulator
structure 210 and the first diffusion barrier layer 250. To be
specific, the first diffusion barrier layer 250 has a horizontal
portion 252, vertical portions 254, and bottom ledge portions 256.
The horizontal portion 252 of the first diffusion barrier layer 250
is at the bottom 222b of the hole 222, the vertical portions 254 of
the first diffusion barrier layer 250 are on the sidewalls 222c of
the hole 222, and the bottom ledge portions 256 of the first
diffusion barrier layer 250 extend into and fill the lateral
recesses 222a. In some embodiments, the vertical portions 254 of
the first diffusion barrier layer 250 extend onto the sidewalls
234a of the hole 234.
[0025] In operation 114 of method 100 in accordance with FIG. 8, a
second diffusion barrier layer 260 is blanket formed over the first
diffusion barrier layer 250. For example, the second diffusion
barrier layer 260 is formed into the hole 222 of etch stop layer
220, the recess 232 and the hole 234 of the dielectric layer 230
and over the first diffusion barrier layer 250. In some embodiments
of the present disclosure, the first diffusion barrier layer 250
and the second diffusion barrier layer 260 conduct electricity and
prevent inter-diffusion and reaction between metals, silicon or
dielectric materials. A deposition process forming the second
diffusion barrier layer 260 is different from the deposition
process forming the first diffusion barrier layer 260. For example,
the second diffusion barrier layer 260 is formed by a deposition
process including ion bombardment that is not included in
depositing the first diffusion barrier layer 250. Ion bombardment
is beneficial in reducing an overhang of the second diffusion
barrier layer 260, in which the overhang is a projection or
extension of the deposited layer 260 that extends over the hole
234. Moreover, ion bombardment is also beneficial in reducing a
thickness of the deposited layer 260, and hence a contact
resistance between the non-insulator structure 210 and the
subsequently formed metal in the hole 234 can be reduced. In some
embodiments, the deposition process including ion bombardment is a
non-conformal deposition process, such as a PVD process. Although
the non-conformal process may exacerbate the overhang of the
deposited layer 260, the overhang can be diminished by the ion
bombardment during the deposition.
[0026] Specifically, PVD is a deposition method which involves
physical processes such as a plasma sputter bombardment rather than
involving a chemical reaction at the surface. In the plasma sputter
process, atoms or molecules are ejected from a target material by
high-energy particle bombardment so that the ejected atoms or
molecules can condense on a substrate as a thin film. The
deposition method may also impact the underlaying material. As an
example, if a barrier is directly deposited on top of the
non-insulator structure 210 and the insulator structure 212 by a
PVD method, the non-insulator structure 210 and the insulator
structure 212 would be exposed to high-energy particle bombardment
(plasma damage). The non-insulator structure 210 and the insulator
structure 212 would suffer the plasma damage during sputtering,
which may degrade the reliability of the non-insulator structure
210 and the insulator structure 212.
[0027] In some embodiments of the present embodiments, because of
the presence of the first diffusion barrier layer 250, when the
second diffusion barrier layer 260 is formed by the deposition
process including strong ion bombardment, the first diffusion
barrier layer 250 can protect the underlying non-insulator
structure 210 and the insulator structure 212 from the ion
bombardment. As a result, the reliability of the non-insulator
structure 210 and the insulator structure 212 may remain.
Furthermore, because of the strong ion bombardment, the second
diffusion barrier layer 260 has vertical sidewalls 260a in the
recess 232 and the hole 234 of the dielectric layer 230 without an
overhang. In some embodiments, a thickness of the second diffusion
barrier layer 260 may be reduced by the ion bombardment. For
example, the thickness of the second diffusion barrier layer 260
may be less than a thickness of the first diffusion barrier layer
250. For example, a thickness of the second diffusion barrier layer
260 is less than 40 angstroms. The power used in ion bombardment in
depositing the non-conformal second diffusion barrier layer 260
ranges from 50 Watt to 10000 Watt, as examples.
[0028] In some embodiments, an adhesion between the second
diffusion barrier layer 260 and a subsequently formed metal in the
hole 222 or the hole 234 is higher than an adhesion between the
first diffusion barrier layer 250 and the subsequently formed
metal. Therefore, the second diffusion barrier layer 260 can
improve the adhesion to the metal. For example, the materials of
the second diffusion barrier layer 260 can be TiN, CrN, TaN, HfN,
NbN, ZrN, VN, MnN, WN, CuSi.sub.x. In some embodiments, since the
lateral recess 222a is filled with the conformal first diffusion
barrier layer 250, the non-conformal second diffusion barrier layer
260 does not extend into the lateral recess 222a.
[0029] In operation 116 of method 100 in accordance with FIG. 9,
horizontal portions of the second diffusion barrier layer 260 on
the bottom 222b of the hole 222 and the bottom 232b of the recesses
232 are removed, while vertical portions of the second diffusion
barrier layer 260 (i.e., the second diffusion barrier layer 260')
remain on sidewalls of the hole 222, sidewalls of the hole 234, and
sidewalls of the recesses 232. Herein, a anisotropic etching
process are performed to remove the portion of the second diffusion
barrier layer 260 on the bottom 222b of the hole 222 and the bottom
232b of the recesses 232. The anisotropic etching process can be
reactive ion etch (RIE) with various plasma sources including
inductively coupled plasma (ICP) and electron cyclotron resonance
(ECR). An etchant in the anisotropic etching process can be
CF.sub.x, CHF.sub.x, CH.sub.x, COx, Cl2, SF.sub.x, HCl, HBr, HI,
BCl.sub.x, O.sub.2, N.sub.2, H.sub.2, Ar, or the combination
thereof. Due to non-isotropic characteristic of etching, the
anisotropic etching process removes horizontal portions of the
second diffusion barrier layer 260, and the remaining second
diffusion barrier layer 260' has an opening 260b to expose the
horizontal portion 252 of the first diffusion barrier layer 250.
The vertical portions 254 of the first diffusion barrier layer 250
remain covered by the remaining second diffusion barrier layer
260'. During the anisotropic etching process, the first diffusion
barrier layer 250 acts as a protective layer to protect underlying
layers against the etching process. For example, an etch resistance
of the first diffusion barrier layer 250 to an etchant used in the
anisotropic etching process is greater than that of the second
diffusion barrier layer 260.
[0030] In operation 118 of method 100 in accordance with FIG. 10, a
liner layer 270 is blanket formed over the structure in FIG. 9. The
liner layer 270 can be a conductive layer such as Ta, TaN, W, WN,
Ti, TiN, or a combination film thereof. The liner layer 270 may be
formed by, for example, a physical vapor deposition (PVD)
processing step, a CVD processing step, an atomic layer deposition
(ALD) processing step, a chemical electroplating step, a chemical
electroless plating step, or various combinations thereof.
[0031] A conductive layer 280 is then formed over the liner layer
270. The conductive layer 280 fills the hole 222, the hole 234, and
the recesses 232. The conductive layer 280 can be a metal, such as
aluminum, aluminum copper or copper. The conductive layer 280 may
be formed, for example, by PVD, CVD, ALD, electroplating (ECP)
step, a chemical electroless deposition (ELD), or various
combinations thereof.
[0032] In operation 120 of method 100 as shown in FIG. 11, a
chemical-mechanical planarization may be optionally performed later
to remove excess material outside the hole of the dielectric
structure DS. To be specific, an excess portion of the conductive
layer 280 (referring to FIG. 10) outside the hole 234 and the
recesses 232 of the dielectric layer 230 is removed, and the
remaining conductive layer, referred to as conductive features
280', is left in the hole 234 and the recesses 232 of the
dielectric layer 230. Also, the anti-reflection layer 240, an
excess portion of the first diffusion barrier layer 250, an excess
portion of the second diffusion barrier layer 260, and an excess
portion of the liner layer 270 outside the hole 234 and the
recesses 232 of the dielectric layer 230 are removed. Through the
configuration, at least one of the conductive features 280' is
electrically connected to the non-insulator structure 210 through
the horizontal portion 252 of the first diffusion barrier layer
250, and the second diffusion barrier 260' is not between the
horizontal portion 252 of the first diffusion barrier layer 250 and
the conductive feature 280'.
[0033] FIG. 12 is a cross-sectional view of an intermediate stage
in the formation of an interconnection structure according to some
embodiments of the present disclosure. In some embodiments, the
operation 116 of the method 100 in FIG. 1, which is illustrated
with FIG. 9, can be omitted. That is, horizontal portions of the
second diffusion barrier layer 260 are not removed. Herein, the
second diffusion barrier layer 260 remains covering the vertical
portions 254 and the horizontal portion 252 of the first diffusion
barrier layer 250. For example, the second diffusion barrier layer
260 has a vertical portion 264 between the vertical portion 254 of
the first diffusion barrier layer 250 and the conductive feature
280' and a horizontal portion 262 between the horizontal portion
252 of the first diffusion barrier layer 250 and the conductive
feature 280'. Through the configuration, at least one of the
conductive features 280' is electrically connected to the
non-insulator structure 210 through the horizontal portion 252 of
the first diffusion barrier layer 250 and the horizontal portion
262 of the second diffusion barrier layer 260.
[0034] Based on the above discussions, it can be seen that the
present disclosure offers advantages over interconnection
structures. It is understood, however, that other embodiments may
offer additional advantages, and not all advantages are necessarily
disclosed herein, and that no particular advantage is required for
all embodiments. One advantage is that the first diffusion barrier
layer can protect underlying metals and dielectrics against ion
bombardment of forming the second diffusion barrier layer. Another
advantage is that the ion bombardment of forming the second
diffusion barrier layer can be strong because the underlying metals
and dielectrics are protected. Yet another advantage is that the
strong ion bombardment is beneficial in reducing an overhang of the
second diffusion barrier layer. Yet another advantage is that the
strong ion bombardment is beneficial in reducing the thickness of
the second diffusion barrier layer, so that the contact resistance
can be reduced.
[0035] According to some embodiments of the present disclosure, a
method of forming an interconnection structure includes forming a
dielectric structure over a non-insulator structure; forming a hole
in the dielectric structure to expose the non-insulator structure;
forming a first diffusion barrier layer into the hole in the
dielectric structure using a first deposition process; forming a
second diffusion barrier layer over the first diffusion barrier
layer using a second deposition process that is different from the
first deposition process; and forming a metal over the second
diffusion barrier layer.
[0036] According to some embodiments of the present disclosure, a
method of forming an interconnection structure includes forming a
dielectric structure over a non-insulator structure; forming a hole
in the dielectric structure to expose the non-insulator structure;
forming a first diffusion barrier layer into the hole in the
dielectric structure without ion bombardment; forming a second
diffusion barrier layer over the first diffusion barrier layer
using a deposition process comprising ion bombardment; and forming
a conductive feature over the second diffusion barrier layer.
[0037] According to some embodiments of the present disclosure, an
interconnection structure includes a non-insulator structure, a
dielectric structure, a first diffusion barrier, and a metal. The
dielectric structure is over the non-insulator structure. The first
diffusion barrier is over the non-insulator structure and
surrounded by the dielectric structure, the first diffusion barrier
having a first portion embedded in a sidewall of the dielectric
structure. The metal is over the first diffusion barrier.
[0038] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
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