U.S. patent application number 15/677929 was filed with the patent office on 2017-11-30 for apparatus and methods for reducing particles in semiconductor process chambers.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Ajit BALAKRISHNA, Tom K. CHOI, Kenneth S. COLLINS, Bradley HOWARD, Anand KUMAR, Andrew NGUYEN, Shahid RAUF, Yogananda SARODE VISHWANATH, Michael D. WILLWERTH.
Application Number | 20170345623 15/677929 |
Document ID | / |
Family ID | 51528277 |
Filed Date | 2017-11-30 |
United States Patent
Application |
20170345623 |
Kind Code |
A1 |
NGUYEN; Andrew ; et
al. |
November 30, 2017 |
APPARATUS AND METHODS FOR REDUCING PARTICLES IN SEMICONDUCTOR
PROCESS CHAMBERS
Abstract
Embodiments of the present disclosure generally provide various
apparatus and methods for reducing particles in a semiconductor
processing chamber. One embodiment of present disclosure provides a
vacuum screen assembly disposed over a vacuum port to prevent
particles generated by the vacuum pump from entering substrate
processing regions. Another embodiment of the present disclosure
provides a perforated chamber liner around a processing region of
the substrate. Another embodiment of the present disclosure
provides a gas distributing chamber liner for distributing a
cleaning gas around the substrate support under the substrate
supporting surface.
Inventors: |
NGUYEN; Andrew; (San Jose,
CA) ; HOWARD; Bradley; (Pleasanton, CA) ;
RAUF; Shahid; (Pleasanton, CA) ; BALAKRISHNA;
Ajit; (Santa Clara, CA) ; CHOI; Tom K.;
(Sunnyvale, CA) ; COLLINS; Kenneth S.; (San Jose,
CA) ; KUMAR; Anand; (Bangalore, IN) ;
WILLWERTH; Michael D.; (Campbell, CA) ; SARODE
VISHWANATH; Yogananda; (Bangalore, IN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Family ID: |
51528277 |
Appl. No.: |
15/677929 |
Filed: |
August 15, 2017 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
14200077 |
Mar 7, 2014 |
9761416 |
|
|
15677929 |
|
|
|
|
61790194 |
Mar 15, 2013 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 37/32477 20130101;
B01D 45/08 20130101; Y10T 428/13 20150115; B32B 1/02 20130101; B29C
66/71 20130101; H01J 37/32871 20130101; H01J 37/32449 20130101;
H01J 37/32495 20130101; B32B 1/08 20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32 |
Claims
1. A chamber liner comprising: a bottom; and a sidewall extending
from a periphery of the bottom, wherein the sidewall forms a closed
loop, the sidewall having a first plurality of through holes
grouped together and formed through a portion of the sidewall, and
a remaining portion of the sidewall free from additional through
holes.
2. The chamber liner of claim 1, wherein the bottom is
substantially circular, the sidewall encloses a cylindrical volume
therein, and the first plurality of through holes are distributed
along the portion of the sidewall non-uniformly.
3. The chamber liner of claim 2, wherein the portion of the
sidewall having the first plurality of through holes extends from a
first end through a center point to a second end, the number of
through holes per length of the sidewall decreases from the first
end to the center point and increases from the center point to the
second end.
4. The chamber liner of claim 3, wherein the first plurality of
through holes are distributed symmetrical about the center
point.
5. The chamber liner of claim 2, the chamber liner further
comprising: a second plurality of through holes formed through the
bottom of the chamber liner.
6. The chamber liner of claim 2, the chamber liner further
comprising: a port formed through the bottom.
7. A gas distributing chamber liner, comprising: a ring section
having a plenum from therein and an inlet port connected with the
plenum; and a cylindrical sidewall having a first end connected
with the ring section and a second end opposite to the first end
along a longitudinal axis of the cylindrical sidewall, wherein a
plurality of gas distribution channels are formed in the
cylindrical sidewall substantially parallel to the longitudinal
axis, and each of the plurality of gas distribution channels
connects between the plenum in the ring section and an outer
surface of the cylindrical sidewall at the second end.
8. The gas distributing chamber liner of claim 7, wherein the
plurality of gas distribution channels are evenly distributed along
the cylindrical sidewall.
9. The gas distributing chamber liner of claim 8, wherein the
second end of each of the plurality of gas distribution channels
opens radially outward from the cylindrical sidewall.
10. The gas distributing chamber liner of claim 7, wherein the
cylindrical sidewall extends upward from the ring section.
11. The gas distributing chamber liner of claim 7, wherein each gas
distribution channel is connected to the outer surface of the
cylindrical sidewall by an outlet perpendicular to the longitudinal
axis of the cylindrical sidewall.
12. A processing apparatus, comprising: a chamber body and a
chamber lid enclosing a processing region; a substrate support
assembly; a substrate support liner surrounding the substrate
support assembly; a plasma screen disposed between the processing
region and the substrate support liner; and a chamber liner
disposed inside the chamber body, the chamber liner comprising: a
bottom; and a sidewall extending from a periphery of the bottom,
wherein the sidewall forms a closed loop surrounding the substrate
support assembly, the sidewall having a first plurality of through
holes grouped together and formed through a portion of the
sidewall, and a remaining portion of the sidewall free from
additional through holes.
13. The processing apparatus of claim 12, wherein a cylindrical
volume around the substrate support assembly is enclosed by the
sidewall, the plasma screen, and the substrate support liner.
14. The processing apparatus of claim 12, wherein the bottom of the
chamber liner is substantially circular, and the first plurality of
through holes are distributed along the portion of the sidewall
non-uniformly.
15. The processing apparatus of claim 14, wherein the portion of
the sidewall having the first plurality of through holes extends
from a first end through a center point to a second end, the number
of through holes per length of the sidewall decreases from the
first end to the center point and increases from the center point
to the second end.
16. The processing apparatus of claim 15, wherein the first
plurality of through holes are distributed symmetrical about the
center point.
17. The processing apparatus of claim 12, the chamber liner further
comprising: a second plurality of through holes formed through the
bottom.
18. The processing apparatus of claim 17, wherein the second
plurality of through holes are distributed non-uniformly about the
center point of the portion of the sidewall.
19. The processing apparatus of claim 17, further comprising a
vacuum port, wherein the bottom portion of the chamber liner
comprising the second plurality of through holes overlaps the
vacuum port.
20. The processing apparatus of claim 19, wherein the vacuum port
is laterally offset from the substrate support assembly.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional application of co-pending
U.S. patent application Ser. No. 14/200,077, filed on Mar. 7, 2014,
which claims benefit of U.S. Provisional Patent Application Ser.
No. 61/790,194, filed on Mar. 15, 2013. Each of the afore mentioned
patent applications are incorporated herein by reference.
BACKGROUND
Field
[0002] Embodiments of the present disclosure relate to apparatus
and methods for processing semiconductor substrates. More
particularly, embodiments of the present disclosure relate to
apparatus and methods for reducing particles generated by
mechanical movement in a semiconductor processing chamber.
Description of the Related Art
[0003] During manufacturing of semiconductor devices, a substrate
is usually processed in a processing chamber, where deposition,
etching, thermal processing may be performed to the substrate. One
of the reasons causing defects in semiconductor devices is
particles generated in the processing chamber. Plasma cleaning may
be used to remove particles in the substrate processing regions.
However, particles generated in other areas of a processing chamber
may not be effectively removed by plasma cleaning. For example,
particles generated by mechanical movement of a throttle valve of a
vacuum pump, a slit valve door, or by lift pins may present outside
the processing area but may enter the processing area due to gas
flow, pressure change in the processing chamber or other
reasons.
[0004] Therefore, there is a need of apparatus and methods for
reducing particles generated in areas outside the processing region
a semiconductor processing chamber.
SUMMARY
[0005] Embodiments of the present disclosure generally provide
apparatus and methods for reducing particles in a semiconductor
processing chamber.
[0006] One embodiment of the present disclosure provides a vacuum
screen assembly configured to dispose between a processing chamber
and a vacuum pump connected to the processing chamber. The vacuum
screen includes a planar body having a first side for facing
interior of the processing chamber and a second side for facing the
vacuum pump. The planar body includes a plurality of flow paths
formed between the first side and the second side, and the
plurality of flow paths are formed to reduce line of sight from the
second side to the first side.
[0007] Another embodiment of the present disclosure provides a
chamber liner. The chamber liner includes a bottom, and a sidewall
extending from a periphery of the bottom, wherein the sidewall
forms a closed loop, a plurality of through holes are formed
through a portion of the sidewall, and the remaining portion of the
sidewall does not include any through holes.
[0008] Yet another embodiment of the present disclosure provides a
gas distributing chamber liner. The chamber liner includes a ring
section having a plenum formed therein and an inlet port connected
with the plenum, and a cylindrical wall section having a first end
connected with the ring section and a second end opposite to the
first end along a longitudinal axis of the cylindrical wall. A
plurality of gas distribution channels are formed in the
cylindrical walls substantially parallel to the longitudinal axis,
and each of the plurality of gas distribution channels connects
between the plenum in the ring section and an outer surface of the
cylindrical wall at the second end.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] So that the manner in which the above recited features of
the present disclosure can be understood in detail, a more
particular description of the disclosure, briefly summarized above,
may be had by reference to embodiments, some of which are
illustrated in the appended drawings. It is to be noted, however,
that the appended drawings illustrate only typical embodiments of
this disclosure and are therefore not to be considered limiting of
its scope, for the disclosure may admit to other equally effective
embodiments.
[0010] FIG. 1 is a schematic sectional view of a processing chamber
having a vacuum screen assembly according to one embodiment of the
present disclosure.
[0011] FIG. 2A is a schematic top view of a vacuum screen assembly
according to one embodiment of the present disclosure.
[0012] FIG. 2B is a sectional side view of the vacuum screen
assembly of FIG. 2A.
[0013] FIG. 2C is an enlarged sectional side view of the vacuum
screen assembly of FIG. 2A showing details of connection.
[0014] FIG. 2D is a schematic sectional section side view of a
vacuum screen assembly according to another embodiment of the
present disclosure.
[0015] FIG. 3A is a planar plate according one embodiment of the
present disclosure.
[0016] FIG. 3B is a schematic top view of a vacuum screen assembly
according to one embodiment of the present disclosure.
[0017] FIG. 3C is an enlarged sectional side view of the vacuum
screen assembly of FIG. 3B showing details of connection.
[0018] FIG. 3D is a schematic sectional section side view of a
vacuum screen assembly according to another embodiment of the
present disclosure.
[0019] FIG. 4A is a schematic perspective sectional view of a
vacuum screen assembly according to one embodiment of the present
disclosure.
[0020] FIGS. 4B-4C are partial sectional views of the vacuum screen
assembly of FIG. 4A.
[0021] FIG. 5 is a schematic perspective view of a liner having a
vacuum screen according to one embodiment of the present
disclosure.
[0022] FIG. 6A is a schematic sectional view of a processing
chamber having a partially perforated chamber liner according to
one embodiment of the present disclosure.
[0023] FIG. 6B is a schematic perspective view of a partially
perforated chamber liner according to one embodiment of the present
disclosure.
[0024] FIG. 6C is a schematic perspective view of a partially
perforated chamber liner according to another embodiment of the
present disclosure.
[0025] FIG. 6D is a schematic top view of the partially perforated
chamber liner of FIG. 6C.
[0026] FIG. 7A is a schematic sectional view of a processing
chamber having a gas distributing chamber liner according to one
embodiment of the present disclosure.
[0027] FIG. 7B is an enlarged partial view of the processing
chamber of FIG. 7A.
[0028] FIG. 7C is a schematic perspective partial sectional view of
a gas distributing chamber liner according to one embodiment of the
present disclosure.
[0029] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
disclosed in one embodiment may be beneficially utilized on other
embodiments without specific recitation.
DETAILED DESCRIPTION
[0030] Embodiments of the present disclosure generally provide
various apparatus and methods for reducing particles in a
semiconductor processing chamber.
[0031] One embodiment of present disclosure provides a vacuum
screen assembly disposed over a vacuum port to prevent particles
generated by the vacuum pump from entering substrate processing
regions. The vacuum screen assembly may include a plurality of flow
paths with reduced or blocked line of sight from the vacuum pump to
interiors of the processing chamber. By reducing or blocking the
line of sight from the vacuum pump to the interiors of the
processing chamber, the vacuum screen assembly provides obstacle
surfaces to block paths of travelling particles without
significantly reducing efficiency of the vacuum pump.
[0032] Another embodiment of the present disclosure provides a
perforated chamber liner around a processing region of the
substrate. In one embodiment, the perforated chamber liner includes
a plurality of through holes that are non-uniformly distributed.
The perforated chamber liner functions as a screen between the
processing region and other areas, such as the vacuum port, to
prevent particles from entering the processing region.
Additionally, the distribution of the plurality of the through
holes also adjusts fluid flow from the processing region to the
vacuum port to improve flow uniformity.
[0033] Another embodiment of the present disclosure provides a gas
distributing chamber liner for distributing a cleaning gas around
the substrate support under the substrate supporting surface. A
plasma of the cleaning gas can then be struck to remove particles
below the substrate supporting surface.
Vacuum Screen Assembly
[0034] FIG. 1 is a schematic sectional view of a processing chamber
100 according to one embodiment of the present disclosure. The
processing chamber 100 includes a vacuum screen assembly 160 to
reduce particles generated by a vacuum pump. The processing chamber
100 may be configured to process a variety of substrates, such as
semiconductor substrates and reticles, and accommodating a variety
of substrate sizes.
[0035] The processing chamber 100 includes a chamber body 110. A
bottom chamber liner 112 and a top chamber liner 114 are disposed
inside the chamber body 110. The bottom chamber liner 112, the top
chamber liner 114 and a chamber lid 116 define a chamber volume
118. Slit valve openings 120 may be formed through the chamber body
110 and the top chamber liner 114 to allow passage of the
substrates and substrate transfer mechanism (not shown). A slit
valve door 122 may be disposed to selectively open and close the
slit valve openings 120.
[0036] A substrate support assembly 124 is disposed in the chamber
volume 118. The substrate support assembly 124 has a substrate
supporting surface 126 for supporting a substrate thereon. A lift
132 may be coupled to lifting pins 134 to raise the substrate 102
from and to lower the substrate 102 on to the substrate support
assembly 124. The substrate support assembly 124 may be an
electrostatic chuck coupled to a chucking power source 136 to
secure the substrate 102 thereon. The substrate support assembly
124 may also include one or more embedded heating elements coupled
to a heating power source 138 for heating the substrate 102 during
processing. A cooling fluid source 140 may provide cooling or
heating and adjust temperature profile of the substrate 102 being
processed.
[0037] A substrate support liner 128 surrounds the substrate
support assembly 124 to shield the substrate support assembly 124
from processing chemistry. A plasma screen 130 is disposed above
the substrate support liner 128. The plasma screen 130 may be
positioned at a vertical level similar to the vertical level of the
substrate supporting surface 126 and separates the chamber volume
118 into a processing volume 118a located above the plasma screen
130 and a lower volume 118b located below the plasma screen
130.
[0038] A plurality of nozzles 142 are positioned around an edge
region of the processing volume 118a. The plurality of nozzles 142
may be connected to a gas delivery system 144 and configured to
inject one or more processing gases to the processing volume
118a.
[0039] The processing chamber 100 may also include an antenna
assembly 146 for generating a plasma inside the processing chamber
100. The antenna assembly 146 may be coupled to a power source 148.
In one embodiment, the antenna assembly 146 is configured to
generate inductively coupled plasma in the processing chamber
100.
[0040] A vacuum pump 150 is in fluid communication with the chamber
volume 118 to maintain a low pressure environment within the
chamber volume 118. In one embodiment, the vacuum pump 150 may be
coupled to the chamber volume 118 through a vacuum port 152 formed
in the bottom chamber liner 112. In one embodiment, the vacuum pump
150 may include a throttle valve for adjusting the vacuum
level.
[0041] As shown in FIG. 1, the vacuum pump 150 is positioned side
by side (i.e., laterally offset) with the substrate support
assembly 124, thus, non-symmetrical relative to the substrate 102
on the substrate support assembly 124. The plasma screen 130
includes a plurality of non-evenly distributed openings along a
periphery of the substrate support assembly 124 to azimuthally
equalize the gas flow from the processing volume 118a to the lower
volume 118b. The vacuum port 152 is positioned at a bottom of the
lower volume 118b, and laterally offset from the substrate support
assembly 124. The vacuum pump 150 pumps out gas and process by
products from the processing volume 118a through the vacuum port
152, the lower volume 118b and the openings in the plasma screen
130.
[0042] The vacuum screen assembly 160 is disposed in the vacuum
port 152 to prevent particles generated by the vacuum pump 150, for
example particles generated by the throttle valve from entering the
lower volume 118b and the processing volume 118a. In one
embodiment, the vacuum screen assembly 160 includes a planar body
168 having a first side 162 facing the lower volume 118b and a
second side 164 facing the vacuum pump 150. A plurality of flow
paths 166 are formed through the planar body 168 connecting the
first side 162 and the second side 164.
[0043] In one embodiment, the plurality of flow paths 166 are
formed to reduce the line of sight from the second side 164 to the
first side 162 to which assists and prevents particles moving from
the second side 164 to the first side 162. The plurality of flow
paths 166 may be in any suitable form for reducing the line of
sight from the second side 164 to the first side 162. For example,
the plurality of flow paths 166 may be through holes tilted
relative to a central axis of the planar body 168, through holes
having wide openings on the second side 164 and narrow openings on
the first side 162. Additional exemplary embodiments of the plasma
screen assembly are described with FIGS. 2A-FIG. 5 below.
[0044] FIG. 2A is a schematic top view of a vacuum screen assembly
200 according to one embodiment of the present disclosure. FIG. 2B
is a sectional side view of the vacuum screen assembly 200. The
vacuum screen assembly 200 may be used in the similar manner as the
screen assembly 160 described above.
[0045] The vacuum screen assembly 200 includes two plates 210, 220
stacked together with a surface 214 of the plate 210 and a surface
224 of the plate 220 facing outwards. The plates 210, 220 may be
planar and parallel to each other. The planar plate 210 has a
plurality of through holes 212 and the planar plate 220 has a
plurality of through holes 222. Each of the plurality of through
holes 212 corresponds to a respective one of the plurality of
through holes 222 to form a flow path 204 therethrough. In one
embodiment, the plurality of through holes 212 and the plurality of
through holes 222 are slightly misaligned to reduce the line of
sight from the surface 224 to the surface 214.
[0046] In the embodiment shown in FIGS. 2A-2B, the centerlines of
through holes 212 and 222 are straight (i.e., parallel with respect
to a central axis 202 of the planar plates 210, 220).
Alternatively, the through holes 212 and 222 may be tilted at an
acute angle with respect to the central axis 202.
[0047] FIG. 2C is an enlarged sectional side view of the vacuum
screen assembly 200 of FIG. 2A showing details of connection. The
planar plate 210 may have two or more receiving openings 216 and
the planar plate 220 may have two or more protrusions 226 mating
the receiving opening 216 to provide guide for alignment between
the planar plates 210, 220.
[0048] FIG. 2D is a schematic sectional section side view of a
vacuum screen assembly 230 according to another embodiment of the
present disclosure. The vacuum screen assembly 230 includes a
planar plate 240 having a plurality of through holes 242 aligned
with the plurality of through holes 212 in the planar plate 210.
Each through hole 242 is larger in size than each through hole 212
producing a reduced line of sight from a surface 244 to the surface
214, i.e., from the vacuum pump 150 back toward the substrate
support assembly 124.
[0049] FIG. 3A is a schematic top view of a planar plate 310
according to one embodiment of the present disclosure. The planar
plate 310 has a plurality of through holes 302. The centerlines of
each of the plurality of through holes 302 may be inclined at an
angle with respect to a central axis 312. In one embodiment, the
plurality of through holes 302 are disposed at the same inclined
angle with respect to the central axis 321, thus being radially
symmetrical about the central axis 312. The inclined angle of the
plurality of through holes 302 reduces lines of sight from one side
of the plate 310 to the other.
[0050] In one embodiment, the planar plate 310 may be used alone to
function as a vacuum screen to reduce particles. In other
embodiments, two or more planar plates 310 may be alternatively
stacked to form a vacuum screen assembly having non-linear flow
paths.
[0051] FIG. 3B is a sectional side view of a vacuum screen assembly
300 according one embodiment of the present disclosure. The vacuum
screen assembly 300 has two planar plates 310a, 310b stacked
together. The planar plates 310a, 310b are similar to the planar
plate 310 of FIG. 3A. Through holes 302a, 302b of the planar plate
310a, 310b are arranged in the same pattern where pairs of through
holes 302a, 302b at least partially align to form flow path 304
through the vacuum screen assembly 300. In one embodiment, the
inclination of the centerlines of one or more pairs of through
holes 302a, 302b of the planar plate 310a, 310b are positioned in
opposite orientation so that the through holes 302a, 302b form a
flow path having a chevron shape. In one embodiment, the angle 307
of the flow path 304 is about 60.degree..
[0052] FIG. 3C is an enlarged sectional side view of the vacuum
screen assembly 300 of FIG. 3B showing details of connection.
Screws 306 may be used to align and secure the planar plates 310a,
310b together.
[0053] FIG. 3D is a schematic sectional section side view of a
vacuum screen assembly 320 according to another embodiment of the
present disclosure. The vacuum screen assembly 320 includes a
plurality of plates, shown as planar plates 310a, 310b, 310c, 310d
stacked together and having holes alternately oriented to form a
labyrinth or zigzagging flow paths 308. The zigzagging flow paths
308 provide additional particle blocking surfaces.
[0054] FIG. 4A is a schematic perspective sectional view of a
vacuum screen assembly 400 according to one embodiment of the
present disclosure. The vacuum screen assembly 400 defines
plurality of flow paths and provides particle blocking surfaces
with between cut-outs and ribs. The cut-outs and ribs may be formed
in a single plate, or may be formed between stacked plates.
[0055] In the embodiment of FIG. 4A, the vacuum screen assembly 400
includes a top plate 410 and a bottom plate 420. The top plate 410
has a substantially planar surface 402 and a plurality of cut-outs
414 formed therethrough. The top late 410 also has a plurality of
ribs 418 extending from a surface 403 facing the bottom plate 420.
The plurality of cut-outs 414 are positioned between the ribs 418.
In one embodiment, the plurality of cut-outs 414 may form two or
more concentric circular groups, and the cut-outs 414 in each group
are separated by fingers 416. The bottom plate 420 is similar to
the top plate 410. The bottom plate 420 has a substantial planar
surface 404 and a surface 405 facing the top plate 410. A plurality
of cut-outs 424 are formed through the bottom plate 420 and a
plurality of ribs 428 extend from the surface 405 towards the top
plate 410. The plurality of cut-outs 424 in the bottom plate 420
are positioned to align with the plurality of ribs 418 of the top
plate 410. The plurality of ribs 428 of the bottom plate 420 are
positioned to align with the plurality of cut-outs 414 in the top
plate 410.
[0056] FIG. 4B is partial sectional view of the vacuum screen
assembly 400 showing the fingers 416 in the top plate 410. FIG. 4C
is a partial sectional view of the vacuum screen assembly 400
showing labyrinth flow paths 409 and theoretical particle paths 408
defined between the top plate 410 and the bottom plate 420. The
labyrinth flow path 409 causes the particles to strike the vacuum
screen assembly 400 in or more places so that most of the particles
are captured prior to exit the vacuum screen assembly 400.
[0057] FIG. 5 is a schematic perspective view of a liner 500 having
a vacuum screen 502 according to one embodiment of the present
disclosure. The liner 500 is similar to the bottom liner 112 except
the liner 500 includes a built-in vacuum screen 502 in a vacuum
port 504. The liner 500 further includes a substrate support port
506 to receive a substrate support. The vacuum screen 502 may
include a plurality of through holes 508 formed therethrough. The
through holes 508 may be arranged and shaped as described in any
one of the vacuum screen assemblies 160, 200, 300, 320 and 400
above. The liner 500 may be used alone to provide particle screen.
Alternatively, one or more additional perforated plates, such as
the planar plates described in the vacuum screen assemblies 160,
200, 300, 320 and 400, may be attached to the vacuum port 504 and
stacked over the vacuum screen 502 to provide additional particle
prevention.
Partially Perforated Liner
[0058] FIG. 6A is a schematic sectional view of a processing
chamber 600 having a partially perforated chamber liner 612
according to one embodiment of the present disclosure. The
processing chamber 600 is similar to the processing chamber 100
except that the vacuum port 152 is open without a vacuum screen
assembly disposed therein. The partially perforated chamber liner
612 provides both particle prevention from the vacuum port 152 and
improvement of flow uniformity.
[0059] The chamber liner 612 includes a sidewall 614 extending
upward from a bottom portion 628. In one embodiment, the sidewall
614 forms a closed loop to surround the substrate support assembly
124 therein. The sidewall 614 may rise up to a plasma screen 630.
The sidewall 614, the plasma screen 630 and the liner 128 carve out
a substantially symmetrical volume 626 around the substrate support
assembly 124 from the lower volume 118b. A portion of the sidewall
614 facing the vacuum port 152 is perforated with a plurality of
through holes 616. The plurality of through holes 616 provide fluid
flow between the volume 626 and the vacuum port 152. In one
embodiment, the plurality of through holes 616 are distributed
non-uniformly to accommodate the non-symmetry between the vacuum
port 152 and the substrate support assembly 124. In one embodiment,
the non-uniform distribution of through holes 616 allows the plasma
screen 630 to have uniform openings, thus, reducing the complexity
of the plasma screen 630.
[0060] FIG. 6B is a schematic perspective view of the partially
perforated chamber liner 612 according to one embodiment of the
present disclosure. The sidewall 614 includes a perforated portion
618 starting from a first end 620, through a center line 622 to a
second end 624. In one embodiment, the plurality of through holes
616 are distributed such that the number of through holes 616 per
length of the perforated portion 618 decreases from the first end
620 to the center line 622 and increases from the center line 622
to the second end 624. In one embodiment, the plurality of through
holes 616 are distributed symmetrical about the center line 622.
When installed, the perforated portion 618 of the sidewall 614 is
positioned to face the vacuum port 152 so that the center line 622
aligns with a direct line connecting a center of the vacuum port
152 and a center 632 of a substrate support port 634 in the bottom
portion 628.
[0061] FIG. 6C is a schematic perspective view of a partially
perforated chamber liner 640 according to another embodiment of the
present disclosure. The chamber liner 640 is similar to the bottom
liner 112 with a perforated baffle wall 642. The perforated baffle
wall 642 is curved to form a complete circle 648 around the
substrate support port 634 to surround the substrate support
assembly 124. A plurality of through holes 644 are formed through
the baffle wall 642. In one embodiment, the distribution of the
through holes 644 may be non-uniform similar to the distribution of
the through holes 616 described in FIG. 6B.
[0062] FIG. 6D is a schematic top view of the partially perforated
chamber liner 640 of FIG. 6C. The circle 648 may overlap with the
vacuum port 152. A plurality of through holes 646 may be formed
through the bottom portion 628 that overlaps with the vacuum port
152 to provide paths for fluid flow with obstacles for blocking
particles.
Gas Distributing Liner
[0063] FIG. 7A is a schematic sectional view of a processing
chamber 700 having a gas distributing chamber liner 728 according
to one embodiment of the present disclosure. The processing chamber
700 is similar to the processing chamber 100 except that the gas
distributing chamber liner 728 is connected to an auxiliary gas
injector 730. The auxiliary gas injector 730 may be connected to a
cleaning gas source 750 for supplying a cleaning gas, such as
fluorine or chlorine. In one embodiment, the gas source 750 may
include a remote plasma source. The gas distributing chamber liner
728 may include a fluid channel 732 formed therein to deliver a
cleaning gas in the lower volume 118b around the substrate support
assembly 124.
[0064] FIG. 7B is an enlarged partial view of the processing
chamber 700 of FIG. 7A. The gas distributing chamber liner 728
includes a gas connecting portion 740 having an inlet channel 736
to be coupled with the auxiliary gas injector 730 through a flow
channel 734. The gas distributing chamber liner 728 also includes a
ring shaped portion 748 and a sidewall 742 extending upward from
the ring shaped portion 748. The ring shaped portion has a plenum
738 formed therein. The plenum 738 connects with the inlet channel
736. A plurality of distributing channels 744 are formed through
the sidewall 742. Each of the plurality of distributing channels
744 is connected between the plenum 738 to an outlet 746 positioned
near the plasma screen 130. The outlets 746 are directed radially
outwards from the substrate support assembly 124.
[0065] FIG. 7C is a schematic perspective sectional view of the gas
distributing chamber liner 728. The sidewall 742 may be circular.
The plurality of distributing channels 744 are evenly distributed
along the sidewall 742.
[0066] The gas distributing chamber liner 728 allows the lower
volume 118b to be cleaned with a plasma, thus, further reducing
particles. During cleaning, a cleaning gas, such as fluorine,
chlorine, or other suitable cleaning gas, may be supplied to the
plenum 738 from the auxiliary gas injector 730. The cleaning gas
expands into the plenum 738 then travels upward along the plurality
of distributing channels 744, then exits from the outlets 746
around the edge of the substrate support assembly 124 and just
below the plasma screen 130. A plasma power, such as inductively
coupled plasma power, may be applied to the processing chamber 700
in a manner similar to process the substrate 102 with a plasma
formed above the substrate support surface 126. In one embodiment,
enough radio frequency power may travel through the openings of the
plasma screen 130 to ignite a plasma of the cleaning gas under the
plasma screen 130 in the lower volume 118b. The lower volume 118b
is therefore cleaned by the plasma. The cleaning process may be
performed prior to, during or post substrate processing. The
cleaning process may be performed with a substrate 102 in the
processing chamber 700 or without a substrate in the processing
chamber 700.
[0067] Embodiments of the present disclosure may be used alone or
in combination. Even though plasma chambers are described in the
above embodiments, vacuum screen assemblies and perforated chamber
liners according to embodiments of the present disclosure may be
used in any suitable chambers.
[0068] While the foregoing is directed to embodiments of the
present disclosure, other and further embodiments of the disclosure
may be devised without departing from the basic scope thereof, and
the scope thereof is determined by the claims that follow.
* * * * *