U.S. patent application number 14/951324 was filed with the patent office on 2017-05-25 for selective epitaxy growth for semiconductor devices with fin field-effect transistors (finfet).
The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz.
Application Number | 20170148796 14/951324 |
Document ID | / |
Family ID | 58708311 |
Filed Date | 2017-05-25 |
United States Patent
Application |
20170148796 |
Kind Code |
A1 |
Basker; Veeraraghavan S. ;
et al. |
May 25, 2017 |
SELECTIVE EPITAXY GROWTH FOR SEMICONDUCTOR DEVICES WITH FIN
FIELD-EFFECT TRANSISTORS (FINFET)
Abstract
A method for forming a semiconductor device includes depositing
spacer material on a first sidewall and a second sidewall of a fin
formed on a substrate. The spacer material is removed from the
first sidewall. A selective epitaxy process is performed on the
first sidewall of the fin.
Inventors: |
Basker; Veeraraghavan S.;
(Schenectady, NY) ; Cheng; Kangguo; (Schenectady,
NY) ; Khakifirooz; Ali; (Los Altos, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Family ID: |
58708311 |
Appl. No.: |
14/951324 |
Filed: |
November 24, 2015 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 29/6656 20130101;
H01L 21/31155 20130101; H01L 29/66545 20130101; H01L 21/02639
20130101; H01L 29/66803 20130101; H01L 21/30604 20130101; H01L
21/845 20130101; H01L 29/6653 20130101; H01L 27/1104 20130101; H01L
29/66795 20130101; H01L 29/785 20130101; H01L 21/31111 20130101;
H01L 27/1211 20130101 |
International
Class: |
H01L 27/11 20060101
H01L027/11; H01L 29/66 20060101 H01L029/66; H01L 21/02 20060101
H01L021/02; H01L 29/78 20060101 H01L029/78; H01L 21/266 20060101
H01L021/266; H01L 21/265 20060101 H01L021/265; H01L 21/311 20060101
H01L021/311 |
Claims
1. A method of forming a semiconductor structure comprising:
depositing spacer material on a first sidewall and a second
sidewall of a fin formed on a substrate; performing an angled ion
implantation process at a predetermined angle on the first sidewall
of the fin to cause damage to the first sidewall of the fin,
wherein the angled implantation process comprises an Xe ion
implantation process, and the predetermined angle is between 30
degrees and 80 degrees; removing the damage caused to the first
sidewall of the fin; removing the spacer material from the first
sidewall of the fin; and performing a selective epitaxy process on
the first sidewall of the fin.
2. The method of claim 1, wherein the fin forms part of a Fin
field-effect transistor (FinFET) on the substrate, and a total on
resistance (R.sub.on) of the FinFET is decreased and an extension
resistance (R.sub.ext)of the FinFET increases.
3. The method of claim 2, wherein the FinFET is a p-type
field-effect transistor (pFET).
4. The method of claim 3, wherein the pFET is part of a static
random access memory (SRAM) cell.
5. (canceled)
6. The method of claim 5, wherein the damage is caused to the
spacer layer on the first sidewall of the fin.
7. The method of claim 6, wherein removing the damage comprises
etching damaged spacer material using a hydrofluoric acid (HF)
solution.
8. The method of claim 1, further comprising: removing the spacer
material from the second sidewall of the fin; and selectively
growing an epitaxy layer on the second sidewall of the fin.
9. A semiconductor device, comprising: a Fin field-effect
transistor (FinFET), the FinFET including: a gate; a channel
region; a source/drain region; and a fin including epitaxy material
selectively formed on one sidewall, wherein angled ion implantation
at a predetermined angle causes damage to the first sidewall of the
fin, wherein spacer material is formed on a second sidewall of the
fin, and the epitaxy material is formed after etching the damage
caused by the angled ion implantation, such that a total on
resistance (R.sub.on) of the FinFET is decreased and an extension
resistance (R.sub.ext)of the FinFET increases, and the angled ion
implantation comprises Xe angled ion implantation, and the
predetermined angle is between 30 degrees and 80 degrees.
10. (canceled)
11. The semiconductor of claim 9, wherein the FinFET is a p-type
field-effect transistor (pFET) that is part of a static random
access memory (SRAM) cell.
12. (canceled)
13. A method of forming a semiconductor device, comprising: forming
a first fin and a second fin of a Fin field-effect transistor
(FinFET) on a substrate; forming a spacer layer on the at least two
fins; forming a masking on the spacer layer on the substrate except
for a portion with the first fin and the second fin comprises
performing copolymer block lithography on a first group of
pull-down device fins; performing angled ion implantation at a
predetermined angle on a first side of the first fin and a first
side of the second fin, wherein the ion implantation comprises Xe
ion implantation, and the damage is caused by the Xe ion
implantation, and the predetermined angle is between 30 degrees and
80 degrees; etching damage caused by the ion implantation from the
first side of the first fin and the first side of the second fin;
removing the masking; and selectively growing an epitaxy layer on
the first side of the first fin and the first side of the second
fin, such that a total on resistance (R.sub.on) of the FinFET is
decreased and an extension resistance (R.sub.ext) of the FinFET
increases.
14. The method of claim 13, wherein the FinFET is a p-type
field-effect transistor (pFET).
15. The method of claim 14, wherein the pFET is part of a static
random access memory (SRAM) cell.
16. (canceled)
17. The method of claim 13, wherein forming the masking on the
spacer layer on the substrate except for the portion with the first
fin and the second fin further comprises performing copolymer block
lithography on a second group of pull-down device fins.
18. The method of claim 13, wherein the damage is caused to the
spacer layer.
19. The method of claim 13, wherein etching the damage uses
hydrofluoric acid (HF).
20. The method of claim 13, further comprising: performing angled
ion implantation on a second side of the first fin and a second
side of the second fin; etching damage caused by the ion
implantation from the second side of the first fin and the second
side of the second fin; and selectively growing an epitaxy layer on
the second side of the first fin and the second side of the second
fin.
Description
BACKGROUND
[0001] Embodiments of the invention relate to semiconductor
structures, in particular, for semiconductor devices using
selective epitaxy growth with Fin field-effect transistors (FinFET)
for reducing drive current and a method of manufacturing the
same.
[0002] Fin field-effect transistors (FinFETs) typically include a
source region and a drain region interconnected by fins which serve
as a channel region of the device and a gate that surrounds at
least a portion of each of the fins between the source region and
the drain region. Epitaxy deposition is typically used to form the
source region and the drain region. Dimensions of FinFET devices
may be limited by various design considerations including available
geographical space in a circuit for the FinFET device and required
ratios of various devices in the circuit. In one example, in a
static random access memory (SRAM) device, pull-up and pull-down
devices must have widths (corresponding to heights in FinFET
devices) of predetermined ratios with respect to each other.
However, the device width for a FinFET device is determined by the
number of fins multiplied by a fin height. Since the number of fins
may be limited due to constraints on the size of the FinFET
circuit, the device width ratio may be limited for fins with only
height. Typically, different device widths are obtained by using
different numbers of fins in different FinFETs. In some designs, it
is desirable to change an active area of the fins to increase
performance of the FinFET. For example, in a SRAM design, a p-type
FET (pFET) having a smaller active area is desired to obtain a
weaker PFET, which increases device stability. However, since
typical pFET designs use only one fin, the number of fins may not
be reduced to decrease the active area of the fins.
SUMMARY
[0003] One or more embodiments relate to Fin field-effect
transistors (FinFETs) and a method of manufacturing the same. In
one embodiment, a method for forming a semiconductor device
includes depositing spacer material on a first sidewall and a
second sidewall of a fin formed on a substrate. The spacer material
is removed from the first sidewall. A selective epitaxy process is
performed on the first sidewall of the fin.
[0004] In another embodiment, a semiconductor device includes a
FinFET. The FinFET including: a gate, a channel region, a
source/drain region, and a fin. The fin includes epitaxy material
selectively formed on one sidewall.
[0005] In one embodiment, a method of forming a semiconductor
includes forming a first fin and a second fin of a FinFET on a
substrate. A spacer layer is formed on the at least two fins. A
masking is formed on the spacer layer on the substrate except for a
portion with the first fin and the second fin. Angled ion
implantation is performed on a first side of the first fin and a
first side of the second fin. Damage caused by the ion implantation
is etched from the first side of the first fin and the first side
of the second fin. The masking is removed. An epitaxy layer is
selectively grown on the first side of the first fin and the first
side of the second fin, such that Ron of the FinFET is decreased
and an R.sub.ext of the FinFET increases.
[0006] These and other features, aspects and advantages of the
present invention will become understood with reference to the
following description, appended claims and accompanying
figures.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1 is a cross-sectional view of an exemplary structure
after formation of a deposited and patterned spacer over pull-down
fin devices and pull-up fin devices on a substrate, according to an
embodiment;
[0008] FIG. 2 is a cross-sectional view of the exemplary structure
after masking using block copolymer lithography, according to an
embodiment;
[0009] FIG. 3 is a cross-sectional view of the exemplary structure
during angled ion implantation to one side of each of the pull-up
fin devices, according to an embodiment;
[0010] FIG. 4 is a cross-sectional view of the exemplary structure
showing damage caused to the spacer on the one side of each of the
pull-up fin devices, according to an embodiment;
[0011] FIG. 5 is a cross-sectional view of the exemplary structure
after performing etching to remove the damaged portion of the
spacer on the one side of each of the pull-up fin devices,
according to an embodiment;
[0012] FIG. 6 is a cross-sectional view of the exemplary structure
after removing the masking, according to an embodiment;
[0013] FIG. 7 is a cross-sectional view of the exemplary structure
after epitaxy growth of material on the one side of each pull-up
fin device, according to an embodiment;
[0014] FIG. 8 illustrates a FinFET assembly that may be employed,
according to an embodiment; and
[0015] FIG. 9 illustrates a block diagram for a process for forming
a semiconductor selective epitaxy growth of material on one side of
pull-up fin devices, according to one embodiment.
DETAILED DESCRIPTION
[0016] The descriptions of the various embodiments of the present
invention have been presented for purposes of illustration, but are
not intended to be exhaustive or limited to the embodiments
disclosed. Many modifications and variations will be apparent to
those of ordinary skill in the art without departing from the scope
and spirit of the described embodiments. The terminology used
herein was chosen to best explain the principles of the
embodiments, the practical application or technical improvement
over technologies found in the marketplace, or to enable others of
ordinary skill in the art to understand the embodiments disclosed
herein.
[0017] As used herein, a "lengthwise" element is an element that
extends along a corresponding lengthwise direction, and a
"widthwise" element is an element that extends along a
corresponding widthwise direction.
[0018] FIG. 1 is a cross-sectional view of an exemplary structure
100 after formation of a deposited and patterned spacer layer 130
(e.g., dielectric material) over pull-down fin devices 110 and
pull-up fin devices 120 on fin devices 135, according to an
embodiment. In one example, the substrate (e.g., substrate 801,
FIG. 8) that the structure is formed on may be a
semiconductor-on-insulator (SOI) substrate (e.g., fully-depleted
SOI, partially depleted SOI, etc.). In other embodiments, the
substrate may be a bulk FinFET, SOI FinFET, Nanowire, etc. In one
instance, the spacer may include exemplary dielectric materials,
for example, silicon oxide, silicon nitride, silicon oxynitride,
boron nitride, high-k materials, or any combination of these
materials. Examples of high-k materials include but are not limited
to metal oxides such as hafnium oxide, hafnium silicon oxide,
hafnium silicon oxynitride, etc. The thickness of the spacer layer
130 can be from 1 nm to 5 nm, although lesser and greater
thicknesses can also be employed.
[0019] The spacer layer 130 may be formed, for example, by
conformal deposition such as atomic layer deposition (ALD),
chemical vapor deposition (CVD), thermal oxidation, thermal
nitridation, etc.
[0020] FIG. 2 is a cross-sectional view of the exemplary structure
200 after masking using block copolymer lithography, according to
an embodiment. In one embodiment, the masking 210 may include a
patterned photoresist layer that is formed over the pull-down fin
devices 110 and the substrate (e.g., substrate 801, FIG. 8). The
patterned photoresist layer can be formed, for example, by applying
a photoresist layer over the top surface of the spacer layer 130,
and block copolymer lithographical patterning the photoresist
layer. In one instance, the portions of the spacer layer 130 around
and over the pull-up fin devices 120 are not masked. The block
lithographical process exposes only the pull-up fin devices 120,
which is appropriate for SRAM devices. In other embodiments, the
block lithographical process may be arranged to provide further
exposure of the pull-up fin devices 120 so that a correct angle may
be used for ion implantation (discussed below) for devices, such as
logical devices.
[0021] In one embodiment, the masking 210 is applied over the
exemplary semiconductor structure, and is patterned to form
openings in regions including interfaces between the pull-up fin
devices 120. In one instance where the masking is a photoresist
layer, the photoresist layer can be patterned by lithographic
exposure and development. Specifically, the photoresist layer can
be applied and patterned over the contiguous pull-up fin devices
120. The locations of openings in the photoresist layer can be
selected such that an edge of at least one opening in the
photoresist layer overlies the pull-up fin devices 120. In another
embodiment, the shape of at least one of the openings in the
photoresist layer can be a rectangle having two pairs of parallel
straight edges.
[0022] FIG. 3 is a cross-sectional view of the exemplary structure
300 during angled ion implantation to one side of each of the
pull-up fin devices 120, according to an embodiment. In one
embodiment, xenon (Xe) ion implantation is used. Other implantation
species can include, but are not limited to argon (Ar), germanium
(Ge). In one example, the ion implantation is angled between 30 to
80 degrees to obtain the desired effect of damaging the spacer
layer 130 over the pull-up fin devices 120.
[0023] FIG. 4 is a cross-sectional view of the exemplary structure
400 showing damage 410 caused to the spacer layer 130 on the one
side of each of the pull-up fin devices 120, according to an
embodiment.
[0024] FIG. 5 is a cross-sectional view of the exemplary structure
500 after performing etching to remove the damaged portion 410 of
the spacer layer 130 on the one side of each of the pull-up fin
devices 120, resulting in the pull-up fin devices 510 according to
an embodiment. In one embodiment, an aqueous etchant containing
hydrofluoric acid (HF) can be used to remove damaged silicon
nitride selective to the undamaged silicon nitride.
[0025] FIG. 6 is a cross-sectional view of the exemplary structure
600 after removing the masking 210, according to an embodiment. In
one embodiment, etching may be used to remove the masking 210.
[0026] FIG. 7 is a cross-sectional view of the exemplary structure
700 after epitaxy growth of semiconductor material 710 on the one
side of each pull-up fin devices 510, according to an embodiment.
In one instance, the epitaxy is grown on one side of the pull-up
fin devices 510 that have been exposed from the ion implantation
and removal of damage by chemical etching. In one embodiment, the
semiconductor material is grown on the physically exposed surface
of the pull-up fin devices 510 of the exemplary structure 700 by
selective epitaxy of the semiconductor material. In one instance,
the source regions and the drain regions can be single crystalline,
and the selective epitaxy process can provide growth of a single
crystalline semiconductor material from the crystalline surfaces of
the source regions and the drain regions, while suppressing growth
of the semiconductor material on the spacer (dielectric) layer 130
surface. In one or more embodiments, a total on resistance (Ron) of
the FinFET device is decreased and an extension resistance
(R.sub.ext) of the FinFET increases.
[0027] In one embodiment, during the selective epitaxy process, one
or more deposition processes of a semiconductor material and one or
more etch processes of the semiconductor material proceed
simultaneously or alternately. The growth rate of the semiconductor
material due to the one or more deposition processes on single
crystalline surfaces is greater than the deposition rate of the
semiconductor material due to the one or more deposition processes
on the spacer layer 130 (dielectric surfaces). The etch rate of the
semiconductor material due to the one or more etch processes is set
to be greater than the deposition rate of the semiconductor
material due to the one or more deposition processes on the spacer
dielectric surfaces, and to be lesser than growth rate of the
semiconductor material due to the one or more deposition processes
on the semiconductor surfaces. Thus, a net deposition of the
semiconductor material occurs only on the semiconductor surfaces
such as the surfaces of the source regions and the drain regions,
and does not occur on the spacer layer 130 (dielectric surface), or
any contiguous gate cap dielectric, and the insulator layer (or a
shallow trench isolation layer if a bulk semiconductor substrate is
employed instead of an SOI substrate).
[0028] In one embodiment, the semiconductor material 710 formed by
the selective epitaxy process form various epitaxy source regions
and epitaxy drain regions. The epitaxy source regions and the
epitaxy drain regions are collectively referred to as epitaxy
active regions. The epitaxy active regions are formed on physically
exposed surfaces of the semiconductor pull-up fin devices.
[0029] In one embodiment, the duration of the selective epitaxy
process is selected so that the neighboring semiconductor pull-down
fin devices 110 are not electrically shorted to each other. In one
instance, the lateral distance between a neighboring pair of
epitaxy source regions or a neighboring pair of epitaxy drain
regions can be a sublithographic dimension, i.e., a dimension less
than a critical dimension. A critical dimension refers to a
dimension that is less than the minimum dimension that can be
printed by a single lithographic exposure. In one instance, the
duration of the selective epitaxy process can be selected such that
some epitaxy active regions on neighboring source regions or on
neighboring drain regions are merged into a single contiguous
epitaxy active region, while the epitaxy active regions do not
merge with any other epitaxy active region. The epitaxy material
can be in-situ doped and/or ex-situ doped.
[0030] In one instance, for a logical device, the selective epitaxy
process may be applied to the opposite side of the pull-up fin
device 510 after the opposite side has ion implantation performed,
removal of the damaged surface material using HF chemical etching
and removal of the masking. In one instance, on logic devices, the
epitaxy material is merged since both fin device surfaces will be
open for growth.
[0031] FIG. 8 illustrates a FinFET assembly 800, that may be
employed according to an embodiment. The FinFET assembly 800
includes a substrate 801, a first FinFET device 820 and a second
FinFET device 840. The first FinFET device 820 includes merged
source/drain (SD) regions 824, including a filling layer 822 and a
contact layer 823. A gate structure 830 is located between the SD
regions 824. In one or more embodiments, the FinFET assembly 800
may represent an electrical circuit connecting the FinFETs 820 and
840, a wafer on which the FinFETs 820 and 840 are both fabricated
or any other assembly including multiple FinFETs 820 and 840 formed
on the same substrate 801.
[0032] The second FinFET device 840 also includes merged
source/drain (SD) regions 844, including a filling layer 842 and a
contact layer 843. The second FinFET device 840 also includes a
gate structure 850 is located between the SD regions 844.
[0033] The first FinFET device 820 is formed around a first fin 821
located on the substrate 801, and the second FinFET device 840 is
formed around a second fin 840 located on the substrate 801. The
first fin 821 may have a first height and the second fin 841 may
have a second height different than the first fin 821. In one
example, the first fin 821 has epitaxy on both sides and the second
fin 841 has epitaxy on one side (after Xe ion implantation and
removal of the damaged portion). The substrate 801 may include one
or more of an insulating material and a semiconductive material,
such as a silicon-based material. The fins 821 and 841 may comprise
a silicon-based material. In one embodiment, the filling material
822 and 842 may be an epitaxial layer, or a layer of silicon, which
may be doped silicon, grown epitaxially on the first and second
fins 821 and 841. The filling material 822 and 842 may be referred
to as a fill material, filling material, epitaxial fill material,
or the like. The contact layers 823 and 843 may include a silicide
layer. The filling layers 822 and 842 may be semiconductor
layers.
[0034] The first gate structure 830 of the first FinFET device 820
may include a gate stack layer 831 and a contact layer 832 on the
gate stack layer 831. The gate stack layer may include one or more
layers of high-dielectric constant (high-k) material under one or
more multi-layer metals, doped polysilicon, and silicide. The gate
structure 830 may also include insulating layers 833 and 834
disposed on sidewalls of the gate stack layer 831 and contact layer
832. Similarly, the second gate structure 850 of the second FinFET
device 840 may include a gate stack layer 851 and a contact layer
852 on the gate stack layer 851. The gate structure 850 may also
include insulating layers 853 and 854 disposed on sidewalls of the
gate stack layer 851 and contact layer 852.
[0035] FIG. 9 illustrates a block diagram for a process 900 for
forming a semiconductor structure, according to one embodiment. In
one embodiment, in block 910 spacer material is deposited on a
first sidewall and a second sidewall of a fin (e.g., sidewalls of a
pull-up device fin 120, FIG. 1) formed on a substrate (e.g.,
substrate 801, FIG. 8). In block 920 the spacer material is removed
from the first sidewall (i.e., and not from the second sidewall).
In block 930, a selective epitaxy process on the first sidewall of
the fin is performed.
[0036] In one embodiment, the fin forms part of a FinFET (e.g.,
FinFET 820, FinFET device 820, FIG. 8) on the substrate, and Ron of
the FinFET is decreased and R.sub.ext of the FinFET increases. In
another embodiment, the FinFET is a p-type field-effect transistor
(pFET). In one instance, the pFET is part of a SRAM cell.
[0037] In one embodiment, process 900 may further include
performing an angled ion implantation process on the first sidewall
of the fin, and removing damage caused to the first sidewall of the
fin prior to performing the selective epitaxy process. In one
instance, in process 900 an angled implantation comprises an Xe ion
implantation process angled between 30 degrees and 80 degrees. In
process 900 the damage is caused to the spacer layer on the first
sidewall.
[0038] In one embodiment, in process 900 removing the damage
includes etching damaged spacer material using an HF solution. In
one instance, process 900 may further include removing the spacer
material from the second sidewall, and selectively growing an
epitaxy layer on the second sidewall of the fin.
[0039] Having described preferred embodiments of a method and
device for selective epitaxy growth on FinFET devices (which are
intended to be illustrative and not limiting), it is noted that
modifications and variations can be made by persons skilled in the
art in light of the above teachings. It is therefore to be
understood that changes may be made in the particular embodiments
disclosed which are within the scope of the invention as outlined
by the appended claims.
[0040] References in the claims to an element in the singular is
not intended to mean "one and only" unless explicitly so stated,
but rather "one or more." All structural and functional equivalents
to the elements of the above-described exemplary embodiments that
are currently known or later come to be known to those of ordinary
skill in the art are intended to be encompassed by the present
claims. No claim element herein is to be construed under the
provisions of 35 U.S.C. section 112, sixth paragraph, unless the
element is expressly recited using the phrase "means for" or "step
for."
[0041] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a", "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprises" and/or "comprising," when used in this
specification, specify the presence of stated features, steps,
operations, elements, materials, and/or components, but do not
preclude the presence or addition of one or more other features,
steps, operations, elements, materials, components, and/or groups
thereof.
[0042] The corresponding structures, materials, acts, and
equivalents of all means or step plus function elements in the
claims below are intended to include any structure, material, or
act for performing the function in combination with other claimed
elements as specifically claimed. The description of the present
invention has been presented for purposes of illustration and
description, but is not intended to be exhaustive or limited to the
invention in the form disclosed. Many modifications and variations
will be apparent to those of ordinary skill in the art without
departing from the scope and spirit of the invention. The one or
more embodiments were chosen and described in order to best explain
the principles of the invention and the practical application, and
to enable others of ordinary skill in the art to understand the
invention for various embodiments with various modifications as are
suited to the particular use contemplated.
* * * * *