U.S. patent application number 15/189417 was filed with the patent office on 2016-11-03 for repair apparatus.
The applicant listed for this patent is Hitachi High-Tech Science Corporation. Invention is credited to Kazuo Aita, Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Hiroshi Oba, Yasuhiko Sugiyama, Anto Yasaka.
Application Number | 20160322123 15/189417 |
Document ID | / |
Family ID | 52446938 |
Filed Date | 2016-11-03 |
United States Patent
Application |
20160322123 |
Kind Code |
A1 |
Aramaki; Fumio ; et
al. |
November 3, 2016 |
Repair Apparatus
Abstract
There is provided a repair apparatus including a gas field ion
source which includes an ion generation section including a
sharpened tip, a cooling unit which cools the tip, an ion beam
column which forms a focused ion beam by focusing ions of a gas
generated in the gas field ion source, a sample stage which moves
while a sample to be irradiated with the focused ion beam is placed
thereon, a sample chamber which accommodates at least the sample
stage therein, and a control unit which repairs a mask or a mold
for nano-imprint lithography, which is the sample, with the focused
ion beam formed by the ion beam column. The gas field ion source
generates nitrogen ions as the ions, and the tip is constituted by
an iridium single crystal capable of generating the ions.
Inventors: |
Aramaki; Fumio; (Tokyo,
JP) ; Yasaka; Anto; (Tokyo, JP) ; Matsuda;
Osamu; (Tokyo, JP) ; Sugiyama; Yasuhiko;
(Tokyo, JP) ; Oba; Hiroshi; (Tokyo, JP) ;
Kozakai; Tomokazu; (Tokyo, JP) ; Aita; Kazuo;
(Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Hitachi High-Tech Science Corporation |
Tokyo |
|
JP |
|
|
Family ID: |
52446938 |
Appl. No.: |
15/189417 |
Filed: |
June 22, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14466524 |
Aug 22, 2014 |
9378858 |
|
|
15189417 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 2237/202 20130101;
G21K 1/14 20130101; G21K 5/04 20130101; H01J 37/08 20130101; H01J
2237/0807 20130101; H01J 37/3053 20130101; H01J 2237/31744
20130101 |
International
Class: |
G21K 5/04 20060101
G21K005/04; H01J 37/305 20060101 H01J037/305; H01J 37/08 20060101
H01J037/08 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 23, 2013 |
JP |
2013-173954 |
Jul 16, 2014 |
JP |
2014-146187 |
Claims
1-5. (canceled)
6. A repair apparatus comprising: a gas field ion source which
includes an ion generation section including a sharpened tip; a
cooling unit which is configured to cool the tip; an ion beam
column which is configured to form a focused ion beam by focusing
ions of a gas generated in the gas field ion source; a sample stage
which is configured to move while a sample to be irradiated with
the focused ion beam is placed thereon, the sample including a mask
or a mold for nano-imprint lithography; a sample chamber which is
configured to accommodate at least the sample stage therein; and a
control unit which is configured to repair the sample with the
focused ion beam formed by the ion beam column, wherein the control
unit is configured to change a type of the gas to be used for
irradiating the sample with the focused ion beam in accordance with
a type of the sample.
7. The repair apparatus according to claim 6, wherein the control
unit is configured to change the type of the gas to be used for
irradiating the sample with the focused ion beam in accordance with
a type of observation or processing to be performed on the
sample.
8. The repair apparatus according to claim 6, wherein the tip is
configured by an iridium single crystal.
9. The repair apparatus according to claim 6, wherein the control
unit is configured to use a hydrogen ion beam as the focused ion
beam for repairing the sample in a case where the sample is a mask
for an Extreme Ultra Violet exposure.
10. The repair apparatus according to claim 6, wherein the control
unit is configured to use one of a helium ion beam, a neon ion
beam, an argon ion beam, a krypton ion beam, and a xenon ion beam,
as the focused ion beam for repairing the sample in a case where
the sample is a photomask.
11. The repair apparatus according to claim 6, wherein the control
unit is configured to use a same type of the gas for sharpening the
tip and for forming the focused ion beam.
12. The repair apparatus according to claim 11, wherein the control
unit is configured to use one of a hydrogen gas, a helium gas, and
a nitrogen gas.
13. A repair apparatus comprising: a gas field ion source which
includes an ion generation section including a sharpened tip; a
cooling unit which is configured to cool the tip; an ion beam
column which is configured to form a focused ion beam by focusing
ions of a gas generated in the gas field ion source; a sample stage
which is configured to move while a sample to be irradiated with
the focused ion beam is placed thereon, the sample including a mask
or a mold for nano-imprint lithography; a sample chamber which is
configured to accommodate at least the sample stage therein; and a
control unit which is configured to repair the sample with the
focused ion beam formed by the ion beam column, wherein the control
unit is configured to use a hydrogen ion beam as the focused ion
beam for repairing the sample in a case where the sample is a mask
for an Extreme Ultra Violet exposure, and wherein the control unit
is configured to use one of a helium ion beam, a neon ion beam, an
argon ion beam, a krypton ion beam, and a xenon ion beam, as the
focused ion beam for repairing the sample in a case where the
sample is a photomask.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of prior U.S. application
Ser. No. 14/466,524, filed Aug. 22, 2014, which claims priority
from Japanese Patent Application No. 2013-173954, filed on Aug. 23,
2013 and Japanese Patent Application No. 2014-146187, filed on Jul.
16, 2014, the entire subject matter of which is incorporated herein
by reference.
TECHNICAL FIELD
[0002] The present invention relates to a repair apparatus using an
ion beam and including a gas field ion source, and more
particularly, relates to a repair apparatus which repairs a defect
or the like present in a photomask, an EUV mask, a nano-imprint
original plate, or the like to be used when forming a micro pattern
in producing a semiconductor device or the like.
BACKGROUND
[0003] Conventionally, a mask to be used in a pattern exposure
apparatus when producing a semiconductor device or the like is a
transmissive mask, a reflective mask for Extreme Ultra Violet (EUV)
exposure, or the like. In a case where a defect or the like is
present in a pattern of such a mask, there has been known a method
in which not an entire surface of an expensive mask is produced
again, but only a defect or the like is repaired from economical
and temporal points of view. A repair apparatus to be used for this
purpose can also be applied to a nano-imprint original plate (mold)
other than the mask, and there has been known a mask repair
apparatus using a focused ion beam (FIB) of gallium ions or an
electron.
[0004] For example, there has been disclosed an apparatus using as
an irradiation beam, a focused ion beam formed by focusing ions
emitted from a liquid metal ion source in an ion optical system
(for example, JP-A-2003-156833). This apparatus repairs a mask by
removing an unnecessary pattern in a minute region and depositing a
film onto a pattern missing portion or the like using a focused ion
beam of gallium ions focused to a diameter of about several
nanometers.
[0005] For example, there has been disclosed a mask repair
apparatus using an electron beam and an assist gas (for example,
JP-A-2003-328161). In this apparatus, as compared with the focused
ion beam of gallium ions, a decrease in transmittance due to ion
implantation is prevented, and the apparatus has excellent beam
focusing performance.
[0006] Further, conventionally, there has been known a gas field
ion source (GFIS) as an ion source of a focused ion beam apparatus
which is expected to have better focusing performance than the
focused ion beam of gallium ions. The gas field ion source can form
a focused ion beam by ionizing a source gas in a high electric
field region at the apex of a tip, and the degree of energy spread
of emitted ions is as small as a fraction of that of the liquid
metal ion source, and therefore, the beam focusing performance
thereof is higher than the focused ion beam of gallium ions. In the
same manner as an electron beam, an etching effect is exhibited by
secondary electrons and an assist gas, however, a region where the
secondary electrons are generated is smaller than in the case of an
electron beam, and therefore, it is expected that processing in a
minute region can be performed.
[0007] Incidentally, a sharpened needle-like electrode which
generates ions in a gas field ion source is referred to as a "tip".
This sharpened needle-like electrode is also used as a needle-like
electrode of an electron source in an electron microscope, a probe
in a scanning probe microscope, and the like. Conventionally, in
order to obtain a high resolution image in an electron microscope
and a focused ion beam apparatus, the apex of a tip has been
desired to be sharpened in a level of several atoms. Further, in
order to prolong the lifetime of a tip and also to obtain a high
resolution image in a scanning probe microscope, it has been
demanded that the apex of a tip should be sharpened to an atomic
level, and the lifetime should be prolonged.
[0008] FIGS. 13A to 13C show schematic shapes of a conventional tip
500. As shown in FIG. 13A, the tip 500 is formed such that the tip
end of a fine wire having a diameter of several hundreds of
micrometers or less has a narrow and sharp shape by electrolytic
polishing (also referred to as "wet etching"). As show in FIG. 13B,
the tip 500 has a minute protrusion 501 in the apex portion B. As
shown in FIG. 13C, the minute protrusion 501 has a triangular
pyramid shape formed by stacking several atomic layers, and the
apex of the protrusion 501 is constituted by at most several atoms.
Hereinafter, the protrusion 501 is referred to as a "pyramid
structure".
[0009] Next, the principle of ion generation of the gas field ion
source using the tip 500 will be described with reference to FIG.
14.
[0010] As an ion source, a gas to be ionized is supplied, and in
the surroundings of the tip 500, a gas molecule or atom
(hereinafter described for short as "gas molecule") 601 to be
ionized exists. The tip 500 is cooled by a cooling device (not
shown).
[0011] When a voltage is applied between the tip 500 and an
extraction electrode 603 by a power source 602, and a high electric
field is generated around the apex of the tip 500, the gas molecule
601 drifting around the tip 500 is polarized and moves as if it is
attracted to the apex of the tip 500 by the polarizing power. Then,
the attracted gas molecule 601 is ionized by the high electric
field at the apex of the tip 500.
[0012] The generated ion 604 is emitted from an opening 603a of the
extraction electrode 603 to a sample (not shown) through an ion
optical system (not shown) downstream of the opening. Since the
size of a region from which a beam of the ions 604 (ion beam) is
emitted, that is, the source size of the ion source is extremely
small, this gas field ion source becomes a high brightness ion
source and can form an extremely fine focused ion beam on the
sample.
[0013] Conventionally, there has been known a technique using a
tungsten tip in a focused ion beam apparatus (or an ion microscope)
including a gas field ion source (JP-A-2009-517840).
[0014] For example, there has been disclosed a method for repairing
a defect in a photomask using a gas field ion source (for example,
WO 2009/022603). In a repair apparatus using a rare gas ion beam
generated from this gas field ion source, a decrease in mask
transmittance (for example, a decrease in mask transmittance due to
implantation of gallium in the mask caused by a conventional
focused ion beam of gallium ions) can be reduced. Further, argon
which is a kind of rare gas has a larger mass than an electron, and
therefore, the processing efficiency is increased as compared with
the case of repairing a mask using an electron beam.
[0015] There has been known, for example, a mask repair apparatus
which forms a focused ion beam by ionizing nitrogen (for example,
JP-A-2013-89534). This mask repair apparatus uses, as the tip, a
tip composed of tungsten or molybdenum, or a tip obtained by
coating a needle-shaped base material composed of tungsten or
molybdenum with a noble metal such as platinum, palladium, iridium,
rhodium, or gold.
[0016] There has been disclosed, for example, repair of a mask for
extreme ultraviolet light exposure using a hydrogen ion beam
generated from a gas field ion source (for example,
JP-A-2011-181894). A tip for this mask repair is formed by coating
a needle-shaped base material composed of tungsten or molybdenum
with a noble metal such as platinum, palladium, iridium, rhodium,
or gold. The apex of this tip is in a pyramid shape sharpened at
the atomic level.
[0017] A method for sharpening the apex of a tip at the atomic
level is important, but it is difficult to carry out the method,
and various methods have been known.
[0018] In a tip, a crystal plane with a low planar atomic density
on the crystal surface tends to be sharpened, and therefore, a
tungsten tip is sharpened in the <111> direction. The {111}
crystal plane of tungsten has a threefold rotational symmetry, and
a {110} crystal plane or a {112} crystal plane composes a side
surface (pyramid surface) of a pyramid structure.
[0019] As a method for sharpening the apex of the tungsten tip in a
level of several atoms, there has been known a method such as
field-induced gas etching using nitrogen or oxygen, thermal
faceting, or remolding, and by those methods, the apex in the
<111> direction can be sharpened with high
reproducibility.
[0020] The field-induced gas etching is a method for etching a
tungsten tip by introducing nitrogen gas while observing a Field
Ion Microscope (FIM) image using helium or the like as an imaging
gas by an FIM. The ionization field strength of nitrogen is lower
than that of helium, and therefore, nitrogen gas cannot come closer
to a region where the FIM image can be observed (that is, a region
where helium is field-ionized) and is adsorbed on the side surface
of the tip at a short distance away from the apex of the tungsten
tip. Then, the nitrogen gas is bonded to a tungsten atom on the
surface of the tip to form tungsten nitride. Tungsten nitride has
low evaporation field strength, and therefore, only the side
surface of the tip at a short distance away from the apex on which
nitrogen gas is adsorbed is selectively etched. At this time, a
tungsten atom at the apex of the tungsten tip is not etched, and
therefore, a tip having a further sharpened apex than an
electrolytically polished tip can be obtained (for example, U.S.
Pat. No. 7,431,856B).
[0021] The thermal faceting is a method for forming a polyhedral
structure at the apex of a tip by heating the tip after
electrolytic polishing in an oxygen atmosphere to grow a specific
crystal plane (for example, JP-A-2009-107105).
[0022] The remolding is a method for forming a crystal plane at the
apex of a tip by heating and applying a high voltage to the tip
after electrolytic polishing under ultrahigh vacuum conditions (for
example, JP-A-2008-239376).
[0023] Further, there has been known a scanning ion microscope
(i.e. a focused ion beam apparatus) using a focused helium ion beam
which includes a gas field ion source using a tungsten tip
sharpened at the atomic level (for example, William B. Thompson et
al., Proceedings of the 28th Annual LSI Testing Symposium (LSITS
2008), (2008) pp. 249-254, "Helium Ion Microscope for Semiconductor
Device Imaging and Failure Analysis Applications"). In this focused
ion beam apparatus, the apex of the tip is constituted by three
tungsten atoms (a trimer), each of which emits ions, and ions
emitted from one atom among these three atoms are selected and
focused into a beam.
[0024] Further, it has been known that in a scanning ion microscope
using a focused helium ion beam which includes a gas field ion
source using a tungsten tip, the apex of the tungsten tip which
emits ions is terminated with a trimer composed of three tungsten
atoms, each of which emits ions, and ions emitted from one atom
among these three atoms are selected and focused into a beam (for
example, B. W. Ward et al., Journal of Vacuum Science &
Technology, vol. 24, (2006), pp. 2871-2874, "Helium ion microscope:
A new tool for nanoscale microscopy and metrology").
[0025] Further, it has been known that a minute triangular pyramid
structure composed of one {110} crystal plane and two {311} crystal
planes is formed at the apex of an iridium<210> single
crystal tip (for example, Ivan Ermanoski et al., Surf. Sci. vol.
596, (2005), pp. 89-97, "Atomic structure of O/Ir(210)
nanofacets").
[0026] Further, it has been known that a minute triangular pyramid
composed of one {110} crystal plane and two {311} crystal planes is
formed by thermal faceting at the apex of a sharpened
iridium<210> single crystal tip, and the apex thereof is
constituted by a single atom. A gas field ion source using this
iridium tip can continuously emit a beam for about 2,250 seconds
(see, for example, Hong-Shi Kuo et al., Nanotechnology, vol. 20,
(2009) No. 335701, "A Single-atom sharp iridium tip as an emitter
of gas field ion sources").
SUMMARY
[0027] (With Respect to Focused Gallium Ion Beam)
[0028] There has been known a mask repair apparatus using a focused
gallium ion beam or an electron beam. Processing using a focused
gallium ion beam enables etching of various materials by a
sputtering effect. However, when a gallium ion is implanted in a
region of a mask where light is to be transmitted, a problem arises
that the light transmittance is decreased. Further, a problem
arises that the focusing performance of the focused gallium ion
beam is not sufficient to obtain a minimum processing dimension
required for repairing the most advanced mask with an ultra-fine
dimension.
[0029] (With Respect to Electron Beam)
[0030] On the other hand, a mask repair apparatus using an electron
beam and an assist gas can perform minimum processing required for
repairing a photomask with an ultra-fine dimension without
decreasing the light transmittance of a beam-irradiated region.
However, since the mask repair apparatus has low sputtering
efficiency for a mask material, the processing efficiency is low,
and also a contrast when a pattern is observed using an electron
beam is low, and therefore, a problem arises that the pattern
cannot be observed clearly. Further, in recent years, with respect
to a phase shift photomask using molybdenum silicide (MoSi) or the
like in a light shielding film, there has been made several
proposals of the light shielding film having enhanced resistance to
damage due to light exposure or cleaning. However, the composition
of such a light shielding film is close to the composition of a
base glass substrate, and therefore, there is no assist gas which
causes a difference in etching speed between the light shielding
film and the base glass substrate. Therefore, a problem arises that
etching material selectivity is low and it is difficult to stop
etching at a desired position such as a boundary surface between
the light shielding film and the base glass substrate. Further, the
minimum processing dimension has a limit of 20 to 30 nm, and
therefore, this apparatus cannot cope with a pattern with an
extremely fine dimension such as a next-generation EUV mask.
[0031] (With Respect to Gas Field Ion Source)
[0032] A mask repair apparatus using a gas field ion source has a
problem that a sample is damaged due to the sputtering effect of an
argon ion beam when observing the sample. On the other hand, in the
case of helium having a small mass, the damage to a light
transmissive region can be reduced, and also the focusing
performance is enhanced as compared with the focused gallium ion
beam, however, the etching efficiency for a sample is low, and
therefore, a problem arises that it takes an enormous time for
repairing a mask. Further, a tip in the gas field ion source has
problems as described below.
[0033] (With Respect to Tungsten Tip)
[0034] When a tip is formed from tungsten, a problem arises that
the tip has low resistance to a chemically active gas species which
is a gas to be ionized, for example, nitrogen gas or the like, and
the lifetime of an ion source is short. For example, in the case
where oxygen or nitrogen is adhered to the surface of a tungsten
tip, a reaction occurs to form tungsten oxide or tungsten nitride
having a low evaporation field strength, and a damage due to the
field evaporation of such an oxide or a nitride from the surface of
the tungsten tip at a low field strength may proceed. A small
amount of oxygen or nitrogen is used in a sharpening process of the
tungsten tip, and therefore, the formation of an oxide or a nitride
on the surface of the tungsten tip cannot be avoided, and if the
apex of the tungsten tip is damaged, the generated ion current may
vary, and moreover, ion emission may be stopped. Further, if the
apex of the tungsten tip is damaged, it is necessary to perform a
sharpening process again, and a problem arises that the downtime of
the apparatus including this tungsten tip is increased. In view of
such problems, helium gas is introduced into an ion source chamber
so as to emit helium ions from a gas field ion source including the
tungsten tip. However, in this case, a pure gas, which is
expensive, is needed, and a problem arises that the cost is
increased.
[0035] Further, the tungsten tip has an apex constituted by three
atoms called "trimer" at the apex and simultaneously emits three
beams from these three atoms. An apparatus including this gas field
ion source selects, from among the three beams emitted from the
tungsten tip, one beam with an aperture disposed in an ion beam
path, focuses the beam, and irradiates the beam on a sample.
Therefore, a beam current reaching the sample is decreased to at
least 1/3 of the total beam current. Further, even if the sum of
the total ion emission current of three beams emitted from the apex
of the tip is constant, the balance of the amount of the ion
current emitted from each of the three atoms may be unstable. A
decrease in beam current causes problems that the image quality is
decreased in forming an image, and the processing amount is
decreased in performing processing. Therefore, with the use of such
a tungsten tip terminated with three atoms, a processing shape and
an observation image may be unstable.
[0036] (With Respect to Coated Tip)
[0037] In the case of a tip obtained by coating a needle-shaped
material composed of tungsten or molybdenum with a noble metal such
as platinum, palladium, iridium, rhodium, or gold, a coating
operation takes a time and during the coating operation, the apex
may be damaged. Further, if the coating is insufficient, a problem
arises that the tip is etched by a chemically active gas starting
from a region where coating is insufficient.
[0038] (With Respect to Iridium Tip)
[0039] In view of the problem that the tungsten tip has an apex
constituted by three atoms, it has been known that iridium is used
in a tip as a material which enables the formation of an apex
constituted by a single atom and also has higher chemical
resistance than tungsten.
[0040] However, the inventors of the present application have found
that in a finishing process for sharpening the apex of the iridium
tip, it is difficult to form a structure having a desired shape
(that is, a pyramid structure having an apex constituted by one
atom) at a desired position by merely using a conventional
technique.
[0041] (With Respect to Method for Sharpening Iridium Tip)
[0042] Further, the {210} crystal plane of iridium has a low planar
atomic density and tends to be sharpened, and therefore, the
iridium tip is sharpened in the <210> direction. As shown in
FIG. 15, when viewing the {210} crystal plane of iridium from the
front, the crystal has mirror image symmetry with respect to a
plane containing the <110> axis and the <210> axis.
Therefore, when field-induced gas etching is performed, a portion
in the vicinity of the boundary surface between the {210} crystal
plane and the {310} crystal plane is left. However, since the {310}
plane has a rectangular shape, an odd number of atoms are not left.
That is, in the case of iridium, it is difficult to perform
formation at a desired position in a state where the number of
terminal atoms is decreased such as a trimer and the like. Further,
it has been found by an experiment made by the inventors of the
present application that when the final sharpening finishing
process is performed only by field evaporation, several atomic
layers in the apex portion are field-evaporated at once in a block
state in many cases, and it is difficult to form a desired apex at
the apex.
[0043] (With Respect to Field-Induced Nitrogen Etching of Iridium
Tip)
[0044] Further, as a method for sharpening the iridium tip, in the
case of introducing oxygen gas in field-induced gas etching, which
is a conventional method, a problem arises that since iridium has
higher chemical resistance than tungsten, a time required for the
processing is increased as compared with the case where tungsten is
processed. Incidentally, in the case where nitrogen gas is
introduced in place of introducing oxygen gas, a pyramid structure
similar to that of tungsten can be formed at the apex of the tip.
However, it is necessary to increase the pressure of nitrogen to be
introduced. When the pressure of a gas to be introduced is
increased, electric discharge between the tip and the extraction
electrode is induced, and a risk of damage to the tip apex is
increased. Further, the etching speed is decreased as compared with
the case of tungsten, and therefore, a problem arises that a time
required for the processing is increased.
[0045] Further, when the iridium tip is sharpened by field-induced
gas etching, an apex is sometimes formed at a position other than
the desired position, and it has been found by an experiment made
by the inventors of the present application that it is difficult to
form a pyramid structure at the same atomic position at each
processing with high reproducibility. If the unstable
reproducibility of the position of the tip apex is unstable, the
position of emission of ions or electrons varies at each processing
for forming the apex. Therefore, a problem arises that it is
necessary to adjust the position of an ion source or an electron
source each time so as to align the beam in an electron microscope
or a focused ion beam apparatus with the optical axis with high
accuracy, and thus, the conventional method is not preferred from
the practical viewpoint.
[0046] (With Respect to Thermal Faceting of Iridium Tip)
[0047] Incidentally, by thermal faceting of the iridium tip in an
oxygen atmosphere (forming a low-index crystal plane), the tip in
the <210> direction can be sharpened with high
reproducibility. However, when the final sharpening finishing
process is performed only by thermal faceting, a desired apex is
formed not only at a desired position, but also at a plurality of
positions in some cases. Further, even if iridium is thermally
processed, a desired crystal plane does not grow, and therefore, it
is difficult to perform control so as to form a pyramid structure
which is surrounded by given crystal planes and has an apex
constituted by a single atom at a given position. Further, when
thermal faceting is performed in a gas field ion source, oxygen
atoms remaining in the gas field ion source act on the iridium tip
as impurities, and stable ion emission may be inhibited.
Accordingly, a method for sharpening the desired position without
using oxygen has been demanded from the viewpoint of stable
operation.
[0048] On the other hand, by using a mask repair apparatus
including a gas field ion source, it is possible to change from an
ion source gas having a large mass to an ion source gas having a
small mass in the same apparatus. That is, if the mass of the
irradiation ion species is large, processing and observation with
characteristics similar to those in the case where a focused
gallium ion beam is used can be performed, and if the mass of the
irradiation ion species is small, processing and observation with
characteristics similar to those in the case where an electron beam
is used can be performed. The mass of the irradiation ion species
can be selected according to the processing purpose or the like.
For example, in the case where a MoSi-containing glass layer as a
surface layer is removed in the repair of a defect in a phase shift
photomask, it is necessary to stop etching at the boundary surface
between the glass layer and the base glass substrate. In order to
achieve this, a process in which the etching speed of the surface
layer is faster than the etching speed of the base, that is, the
material selectivity is high is required. However, when a beam of
ions of a light element such as hydrogen or helium or an electron
beam is used, since the surface layer and the base are composed of
the same glass material, there is no great difference in etching
speed. On the other hand, when a beam of ions of a little heavier
element such as nitrogen or neon is used, since such a beam has a
sputtering effect, a difference in the structure between the
surface layer and the base makes a difference in etching speed.
When a further heavier element such as argon, krypton, or xenon is
used, a problem arises that the light transmittance is decreased
due to implantation of ions. Therefore, ions of a little heavier
element such as nitrogen or neon are most suitable for use in
repairing a phase shift photomask.
[0049] The speed of processing with an ion beam is in proportion to
an ion emission current, however, the ion emission current of a gas
field ion source is lower by several digits than that of a focused
gallium ion beam. That is, the processing speed is extremely slow,
and therefore, an ion emission current which is as large as
possible is required to be ensured. In the case where an ion
emission current is increased by merely increasing a source gas
pressure, electric discharge is induced at the tip apex, so that
the tip apex may be damaged. Therefore, it is desired to use the
source gas which is easily ionized at a low gas pressure. Here, the
ionization efficiency of nitrogen is higher than that of neon, and
therefore, at the same gas pressure, a high ion emission current is
more easily obtained by a nitrogen beam than by a neon beam, and it
has been found by the inventors of the present application that a
focused nitrogen ion beam is most suitable for use in repairing a
photomask.
[0050] However, nitrogen gas is corrosive to a certain type of
metal, and tungsten which is normally used as a tip material of a
conventional gas field ion source using helium gas is corroded
(etched) even if only a small amount of nitrogen is mixed in helium
gas. Therefore, the shape of the tip is deformed, and the apex
portion of the tip serving as an ion emission section is damaged,
so that the ion emission may be stopped. Therefore, in a
conventional gas field ion source using a tungsten tip, it is
difficult to realize the formation of a nitrogen ion beam by
supplying nitrogen gas as a main component.
[0051] The present invention has been made in view of the above
circumstances, and an object of the present invention is to provide
a repair apparatus including a gas field ion source which causes
less damage to a sample and is capable of repairing a minute region
of a mask or the like stably and efficiently over a long period of
time.
[0052] (1) According to an aspect of the present invention, there
is provided a repair apparatus comprising: a gas field ion source
which includes an ion generation section including a sharpened tip;
a cooling unit which is configured to cool the tip; an ion beam
column which is configured to form a focused ion beam by focusing
ions of a gas generated in the gas field ion source; a sample stage
which is configured to move while a sample to be irradiated with
the focused ion beam formed by the ion beam column is placed
thereon; a sample chamber which is configured to accommodate at
least the sample stage therein; and a control unit which is
configured to repair a mask or a mold for nano-imprint lithography,
which is the sample, with the focused ion beam formed by the ion
beam column, wherein the gas field ion source is configured to
generate nitrogen ions as the ions, and the tip is constituted by
an iridium single crystal capable of generating the ions.
[0053] (2) In the repair apparatus according to (1), the tip may
include a pyramid structure having an apex constituted by a single
iridium atom.
[0054] (3) In the repair apparatus according to (1) or (2), the tip
may be constituted by an iridium single crystal with <210>
orientation, and an apex portion of the tip has an apex surrounded
by one {100} crystal plane and two {111} crystal planes.
[0055] (4) The repair apparatus according to any one of (1) to (3)
may further comprise a gas supply section which is configured to
supply a gas to be ionized to the ion generation section, and the
gas supply section may include a container which is configured to
store and supply each of a plurality of gas species.
[0056] (5) In the repair apparatus according to (4), the gas supply
section may store at least nitrogen and hydrogen as the plurality
of gas species.
[0057] (6) In the repair apparatus according to (5), the control
unit may be configured to uses a hydrogen ion beam as the focused
ion beam in a case where a mask for extreme ultraviolet light
exposure is repaired as the mask, and to use a nitrogen ion beam as
the focused ion beam in a case where a photomask is repaired as the
mask.
[0058] (7) In the repair apparatus according to any one of (4) to
(6) may further comprise a gas change section which is capable of
changing the gas species to be supplied from the gas supply
section.
[0059] (8) In the repair apparatus according to any one of (4) to
(6) may further comprise an ion change section which is configured
to change ion species by changing a voltage required for ionizing a
gas in the ion generation section.
[0060] According to the above configuration, it is possible to
provide a repair apparatus including a gas field ion source which
causes less damage to a sample and is capable of repairing a minute
region of a mask or the like stably and efficiently over a long
period of time.
BRIEF DESCRIPTION OF THE DRAWINGS
[0061] The above and other aspects of the present invention will
become more apparent and more readily appreciated from the
following description of illustrative embodiments of the present
invention taken in conjunction with the attached drawings, in
which:
[0062] FIG. 1 is an explanatory view showing a schematic structure
of a repair apparatus according to an illustrative embodiment of
the invention;
[0063] FIG. 2 is a schematic structural view for explaining the
structure of a gas field ion source according to an illustrative
embodiment of the invention;
[0064] FIG. 3 is a perspective view of a tip assembly according to
an illustrative embodiment of the invention;
[0065] FIG. 4 is a structural view of an ion beam column according
to an illustrative embodiment of the invention;
[0066] FIG. 5 is a view for explaining a pattern to be repaired by
the repair apparatus according to an illustrative embodiment of the
invention;
[0067] FIGS. 6A and 6B are views for explaining a pyramid structure
at an apex portion of a tip of iridium according to an illustrative
embodiment of the invention, wherein FIG. 6A is a view of an atomic
model of the pyramid structure, and FIG. 6B is an explanatory view
for showing crystal planes;
[0068] FIGS. 7A and 7B are views showing the arrangement of atoms
in a crystal plane in the pyramid structure at the apex portion of
the tip of iridium according to an illustrative embodiment of the
invention, wherein FIG. 7A is a front view of a {100} crystal plane
constituting a pyramid surface, and FIG. 7B is a front view of a
{111} crystal plane constituting a pyramid surface;
[0069] FIGS. 8A and 8B are views for explaining a first pyramid
structure at an apex portion of an iridium tip of a conventional
example, wherein FIG. 8A is a view of an atomic model of the
pyramid structure, and FIG. 8B is an explanatory view for showing
crystal planes;
[0070] FIGS. 9A and 9B are views for explaining a second pyramid
structure at an apex portion of an iridium tip of a conventional
example, wherein FIG. 9A is a view of an atomic model of the
pyramid structure, and FIG. 9B is an explanatory view for showing
crystal planes;
[0071] FIGS. 10A and 10B are views showing the arrangement of atoms
in a crystal plane in the pyramid structure at the apex portion of
the iridium tip of the conventional example, wherein FIG. 10A is a
front view of a {110} crystal plane constituting a pyramid surface,
and FIG. 10B is a front view of a {311} crystal plane constituting
a pyramid surface;
[0072] FIG. 11 is a schematic structural view of a tip production
apparatus for producing a tip according to an illustrative
embodiment of the invention;
[0073] FIG. 12 is a flowchart showing a tip production method
according to an illustrative embodiment of the invention;
[0074] FIGS. 13A to 13C are schematic views for explaining a
conventional tip, wherein FIG. 13B is an enlarged view of an apex
portion A in FIG. 13A, and FIG. 13C is an enlarged view of an apex
portion B in FIG. 13B;
[0075] FIG. 14 is a schematic structural view for explaining
ionization in a conventional gas field ion source; and
[0076] FIG. 15 is a view showing the arrangement of each crystal
plane of iridium.
DETAILED DESCRIPTION
[0077] Hereinafter, a repair apparatus according to illustrative
embodiments of the present invention will be described with
reference to the accompanying drawings.
First Illustrative Embodiment
Repair Apparatus for Photomask
[0078] First, with reference to FIG. 1, a repair apparatus 10 will
be described.
[0079] The repair apparatus 10 repairs a defect present in a
photomask to be used in a pattern exposure apparatus (not shown)
when producing a semiconductor device or the like.
[0080] The repair apparatus 10 includes a gas field ion source
(described later), and uses as ions to be emitted from the gas
field ion source, not a light element such as helium, but nitrogen
having high sputtering efficiency. Further, since the repair
apparatus 10 uses an ionized gas containing nitrogen as a main
component, iridium having high chemical resistance is used as a tip
as described later. A sharpened apex of this tip has a minute
triangular pyramid shape which is composed of specific crystal
planes and has an apex constituted by a single iridium atom.
[0081] The repair apparatus 10 mainly includes an ion beam column
11 including a gas field ion source (not shown), an electron beam
column 12 including an electron source (not shown), a sample
chamber 13, and a control unit 20.
[0082] The ion beam column 11 includes at least a gas field ion
source (not shown), which is an ion generation source, and an ion
beam optical system which forms a focused ion beam by focusing ions
generated in the gas field ion source and scans and sweeps a mask
14, which is a sample. Incidentally, the details of the gas field
ion source and the ion beam column 11 will be described later.
[0083] The electron beam column 12 includes at least an electron
source (not shown), which is an electron generation source, and an
electron beam optical system (not shown) which forms an electron
beam by focusing electrons generated in the electron source and
scans the mask 14, which is a sample.
[0084] Incidentally, the ion beam column 11 and the electron beam
column 12 are disposed such that the focused ion beam and the
electron beam are irradiated on substantially the same position on
the mask 14. Incidentally, by using a tip assembly to be used as
the gas field ion source (described later), as the electron source,
an electron beam having favorable focusing performance can be
obtained, and a clear Scanning Electron Microscope (SEM) image can
be obtained. Further, the electron beam column 12 can irradiate an
electron beam for neutralizing the electric charge generated by
irradiation with an ion beam formed by the ion beam column 11.
[0085] The sample chamber 13 includes a sample stage 15 which can
move in a state where the mask 14, which is a sample, is placed
thereon. The sample stage 15 moves based on a command of an
operator. For example, in the case where the sample stage 15 is
configured to be able to be displaced in five axes, the sample
stage 15 is supported by a displacement mechanism (not shown) which
includes an XYZ axis mechanism (not shown) for moving the sample
stage 15 along an X axis, a Y axis, and a Z axis, the X axis and
the Y axis being orthogonal to each other within the same plane and
the Z axis being orthogonal to both of the X axis and the Y axis, a
tilt axis mechanism (not shown) for rotating and tilting the sample
stage 15 about the X axis or the Y axis, and a rotating mechanism
(not shown) for rotating the sample stage 15 about the Z axis.
[0086] Further, the sample chamber 13 includes a deposition gas
supply section 16 which can supply a gas for deposition to a
missing defect on the mask 14 and an etching gas supply section 17
which promotes selective removal of an excess defect on the mask
14. Accordingly, the control unit 20 can form a film of carbon,
silicon oxide, tungsten, or the like on the mask 14 by irradiating
an ion beam of nitrogen or the like while spraying a carbon-based
gas, a silane-based gas, a carbon-based compound gas containing a
metal such as tungsten, or the like on the mask 14 from the
deposition gas supply section 16. The mask 14 on which the defect
has been repaired in this manner can normally transfer the pattern
without transferring the defect even if it is exposed to light.
[0087] Further, in the case where an excess defect pattern formed
from a light shielding pattern section on the mask 14 is repaired,
the control unit 20 irradiates an ion beam of nitrogen or the like
while irradiating the defective region of the mask 14 with a
halogen-based etching gas such as an iodine-based etching gas from
the etching gas supply section 17. Accordingly, the control unit 20
can perform high speed processing of the mask pattern or can
selectively remove only a desired material as compared with the
case where an etching gas is not introduced.
[0088] Further, the sample chamber 13 includes a detector 18 which
detects a secondary signal such as a secondary electron, a
secondary ion, a reflected electron, or an X-ray generated from the
mask 14 by irradiation with an ion beam or an electron beam, and a
monitor 19 capable of displaying a result detected by the detector
18 as an observation image. Incidentally, the monitor 19 can also
display various control values.
[0089] The control unit 20 includes an image forming section (an
image forming section 131 shown in FIG. 4), an extraction voltage
control section (an extraction voltage control section 132 shown in
FIG. 4), an ion source gas control section (an ion source gas
control section 133 shown in FIG. 4), a temperature control section
(a temperature control section 134 shown in FIG. 4), and the like
as described later. The control unit 20 controls a voltage to be
applied to a condenser lens electrode (not shown), an objective
lens electrode (not shown), and the like in an ion beam optical
system or an electron beam optical system, and also controls the
movement of the sample stage 15, and the like.
[0090] The extraction voltage control section in the ion beam
optical system controls a voltage to be applied to an extraction
electrode (not shown) of a gas field ion source (not shown), and
adjusts an ion emission current and also operates when the pyramid
structure at the apex of the tip is produced or processed.
[0091] In the image forming section, a sample is irradiated with a
focused ion beam (described later), the generated secondary ions
or/and secondary electrons are detected by the detector 18, whereby
an observation image of the sample is displayed on the monitor 19,
and thus, an observation can be performed. That is, in the image
forming section, by irradiating the mask 14 with an ion beam of
nitrogen or the like and detecting the secondary electrons, the
state of the surface of the mask 14 can be examined. Further, by
detecting the secondary ions, the distribution of elements
constituting the surface of the mask 14 can be examined. The image
of the surface of the mask 14, the elemental distribution result,
and various control values can be displayed on the monitor 19.
[0092] Incidentally, the control unit 20 can maintain the inside of
the ion beam column 11, the inside of the electron beam column 12,
and the inside of the sample chamber 13 under vacuum by control of
a vacuum pumping system provided in each section.
[0093] The ion source gas control section controls a gas flow rate
control section (not shown), which controls the flow rate of a gas
to be supplied to a gas field ion source, such as a mass flow
controller, and an ion source gas supply section (not shown)
including a gas species change section (not shown).
[0094] (Gas Field Ion Source)
[0095] FIG. 2 shows the basic structure of a gas field ion source
(GFIS). The gas field ion source 30 mainly includes a tip assembly
31, an extraction electrode 32, an ion source gas supply section
33, and a cooling device 34.
[0096] As shown in FIG. 3, the tip assembly 31 mainly includes an
insulating base member 35, a pair of conducting pins 36 fixed to
the base member 35, a filament 37 composed of a fine wire of
tungsten or the like connected between the end portions of the pair
of conducting pins 36, and a tip 1 electrically and mechanically
fixed to the filament 37.
[0097] The tip 1 is electrically and mechanically connected to the
filament 37 by spot welding or the like, and emits ions from an
apex portion thereof. The tip 1 is composed of iridium which can
withstand a chemical reaction by nitrogen gas, and is specifically
formed from an iridium single crystal with <210> orientation.
The tip 1 has an apex sharpened at the atomic level so that an
electric field is easily concentrated thereon. Further, the tip 1
has a novel minute pyramid structure at the apex for realizing the
long-term operation of the gas field ion source 30. The pyramid
structure is surrounded by one {100} crystal plane and two {111}
crystal planes and has an apex with <210> orientation and
constituted by only a single atom.
[0098] Further, the filament 37 can adjust the temperature of the
tip 1, and is used when cleaning the surface of the tip 1 or
producing the pyramid structure at the apex of the tip 1, or the
like.
[0099] The detailed structure of the apex of this tip, its effect,
and the production method thereof will be described in detail in
the third illustrative embodiment.
[0100] The extraction electrode 32 is disposed apart from the apex
of the tip 1 and includes an opening 32a. The extraction electrode
32 guides an ion 2 emitted by the tip 1 to the ion optical system
downstream of the opening 32a through the opening 32a of the
extraction electrode 32. An extraction power source (not shown)
applies an extraction voltage between the extraction electrode 32
and the tip 1, whereby the gas molecule is ionized at the apex of
the tip 1 to generate an ion 2, and extracts the ion 2 to the side
of the extraction electrode 32.
[0101] The ion source gas supply section 33 supplies a gas (an ion
source gas, for example, a gas molecule or the like) 38 to be
ionized to the surroundings of the tip 1. The ion source gas supply
section 33 communicates with an ion source chamber 39 through a gas
introduction pipe 33b such that the flow rate can be adjusted by a
valve 33a. The gas species to be provided in the ion source gas
supply section 33 is not limited to one species, and gas cylinders
(not shown, also referred to as gas containers) of a plurality of
gas species are disposed, and the gases may be supplied to the ion
source chamber 39 by changing the gas species as needed or by
mixing a plurality of gas species. Further, in the case where a
plurality of gas species are supplied, the optimum extraction
voltage for each gas species are stored in the extraction voltage
control section 132 in advance, and at the time of ion change, a
command is given to the extraction voltage control section 132 from
the ion change section (not shown) to perform change to desired gas
ions among the plurality of gas species to be supplied and generate
the desired gas ions.
[0102] In this illustrative embodiment, in the ion source gas
supply section 33, nitrogen gas is used as the ion source gas to be
supplied, however, the ion source gas is not limited thereto, and
may be a rare gas such as helium, neon, argon, krypton, or xenon,
or may be a molecular gas such as hydrogen or oxygen, or may be a
mixed gas of any of these gases. For example, the ion source gas
supply section 33 includes gas cylinders (not shown) containing
each of helium, hydrogen, nitrogen, oxygen, and neon, and a desired
gas is selected and may be supplied from the gas cylinder. For
example, when a wide region of the apex portion of the tip at the
atomic level is observed with a field ion microscope (FIM), helium
may be supplied, when the apex of the tip 1 is sharpened, oxygen or
nitrogen may be supplied, and when a focused ion beam is formed,
any of hydrogen, nitrogen, and neon may be supplied. Further, when
a mask (EUV mask) for Extreme Ultra Violet (EUV) exposure is
repaired, since an EUV mask pattern is extremely vulnerable to
damage caused by ion irradiation, the ion source gas supply section
33 supplies light ions, for example, hydrogen gas or the like. At
this time, even if EUV masks are continuously repaired, desired
repair can be performed by only change of gas species. For example,
different types of masks can be repaired with one apparatus as
follows: a defect in a photomask is repaired by using nitrogen gas
as the ion source gas, and thereafter, a defect in an EUV mask is
repaired by using hydrogen gas as the ion source gas.
[0103] Incidentally, the above document JP-A-2011-181894 discloses
that an emitter tip of a gas field ion source which generates a
hydrogen ion beam is a member composed of tungsten or molybdenum,
or a member obtained by coating a needle-shaped base material
composed of tungsten or molybdenum with a noble metal such as
platinum, palladium, iridium, rhodium, or gold, and the apex
thereof is in the form of a pyramid sharpened at the atomic level.
However, JP-A-2011-181894 discloses that when a voltage applied to
the emitter tip is too large, the constituent elements (tungsten
and platinum) of the emitter tip are scattered on the side of the
extraction electrode along with hydrogen ions. Therefore,
JP-A-2011-181894 describes that a voltage applied to the emitter
tip during operation (that is, during ion beam irradiation) is
maintained at a voltage to such an value that the constituent
elements of the emitter tip itself are not scattered. Accordingly,
it is difficult to generate hydrogen ions while trying not to
field-evaporate the constituent elements of the emitter tip in some
cases.
[0104] On the other hand, the repair apparatus 10 of this
illustrative embodiment is configured such that the tip 1 of the
gas field ion source 30 which generates a hydrogen ion beam is
composed of iridium and can repair an EUV mask, the apex of the tip
1 of iridium has a minute triangular pyramid structure having at
least a {100} crystal plane, and the apex of the triangular pyramid
structure is constituted by only a single iridium atom. According
to this configuration, since the apex portion of the tip 1 is a
densely constituted pyramid structure as compared with a
conventional iridium tip, a hydrogen ion beam can be stably
generated over a long period of time, and an effect that a desired
region of an EUV mask can be repaired is exhibited.
[0105] In this manner, it is most suitable to change the ion
species to be irradiated according to the physical properties of a
target substance to be repaired, and in order to do this, the ions
source gas supply section 33 may be configured to be able to
dispose a plurality of gas cylinders (not shown), and may have a
gas change section (not shown). This gas change section is
controlled by the ion source gas control section 133.
[0106] The cooling device 34 cools the tip 1 and a supply gas 38 to
be supplied into the ion source chamber 39 from the ion source gas
supply section 33 with a cooling medium such as liquid helium or
liquid nitrogen. The cooling medium at a low temperature generated
by the cooling device 34 comes in contact with the wall surface 40
surrounding the tip assembly 31 and the gas introduction pipe 33b
through a connection section 34a and cools these members and the
inside of the ion source chamber 39.
[0107] Incidentally, the cooling device 34 is not limited to this
configuration, and may have any configuration as long as it can
cool at least the tip 1, and may have a configuration including,
for example, a cooling block, a freezing machine, or the like.
Further, between the ion source chamber 39 and the tip assembly 31,
a cold head 41 for radiating the heat of the tip 1 is disposed. The
cold head 41 is formed into a block shape with alumina, sapphire,
or a ceramic material such as aluminum nitride, and fixed to the
base member 35.
[0108] The cooling temperature of the tip 1 is controlled by a
temperature control section of the control unit 20 and varies
depending on the gas species to be supplied from the ion source gas
supply section 33, however, in this illustrative embodiment, the
temperature can be set within the range of about 40 K to 200 K.
According to this configuration, the ion beam with a current
required for fine processing can be stably irradiated.
[0109] Incidentally, in this illustrative embodiment, the
configuration of the repair apparatus 10 is described using a
photomask as an example of the mask 14, however, the repair
apparatus 10 is not limited thereto and can also be applied to
repair of a defect in an EUV mask.
[0110] (Ion Beam Column)
[0111] The configuration of an ion beam column will be described
with reference to FIG. 4.
[0112] An ion beam column 110(11) includes at least the
above-described ion source chamber 39 including the tip assembly
31, a condenser lens electrode 111 which condenses ions 2 emitted
from the ion source chamber 39 to form a focused ion beam 101, and
an objective lens electrode 112 which focuses the focused ion beam
101 on a sample (not shown).
[0113] A vacuum pump 117 maintains the degree of vacuum in the ion
source chamber 39. For example, in the gas field ion source 30, the
degree of vacuum before supplying an ion source gas is maintained
at high vacuum, for example, at about 1.times.10.sup.-5 to
1.times.10.sup.-8 Pa. Between the ion source chamber 39 and a
sample chamber (not shown) in which a sample is placed, an
intermediate chamber 113 is provided, and between the ion source
chamber 39 and the intermediate chamber 113 and between the sample
chamber and the intermediate chamber 113, orifices 114 and 115 are
provided, respectively.
[0114] In the ion beam column 110, the focused ion beam 101 is
passed through the orifices 114 and 115 and is irradiated on the
sample. The intermediate chamber 113 is connected to a vacuum pump
116 so that the degree of vacuum can be adjusted by the vacuum pump
116, and the intermediate chamber 113 enables differential pumping
between the sample chamber and the ion source chamber 39. According
to this ion beam optical system, a focused nitrogen ion beam having
a diameter of 1 nm or less can be formed.
[0115] A control unit 130(20) includes an image forming section
131, an extraction voltage control section 132, an ion source gas
control section 133, a temperature control section 134, and the
like. The control unit 130 controls a voltage to be applied to the
condenser lens electrode 111, the objective lens electrode 112, and
the like in the ion beam optical system or the electron beam
optical system, and also controls the movement of the sample stage
(not shown) on which the sample is placed, and the like. The
extraction voltage control section 132 in the ion beam optical
system controls a voltage to be applied to the extraction electrode
32, and adjusts an ion emission current and also operates when the
pyramid structure at the apex of the tip 1 is produced or
processed.
[0116] The focused ion beam 101 of this gas ions may also be used
in the observation of the surface of a sample utilizing secondary
electrons generated from an irradiated portion (not shown) on the
surface of the sample and processing (hole formation, removal of a
surface layer, etc.) of the surface of the sample by utilizing
sputtering of the sample with the gas ions irradiated on the
sample.
[0117] Further, the ion beam column 110 includes a detector (a
detector 18 shown in FIG. 1, etc.) for obtaining a Field Ion
Microscope (FIM) image for confirming the atomic arrangement at the
apex of the tip 1 of the gas field ion source 30. This detector is
configured to be movable with respect to the ion beam axis, and in
the case where the confirmation of an FIM image is not needed, the
detector can be moved away from the ion beam axis and made to stand
by. This detector enables the confirmation of the atomic
arrangement at the apex of the tip 1 as needed, for example, in the
case where an ion current becomes unstable, an observation image is
disturbed, and so on. The tip 1 of iridium of this illustrative
embodiment is composed of an iridium single crystal with
<210> orientation and has a pyramid structure which has at
least a {100} crystal plane at the apex portion of this tip 1, and
the pyramid structure has an apex constituted by a single atom.
This apex shape will be described in detail in the third
illustrative embodiment.
[0118] Accordingly, the repair apparatus 10 of this illustrative
embodiment capable of forming a nitrogen ion beam by the gas field
ion source 30 having the tip 1 of iridium is a novel apparatus.
And, according to this repair apparatus 10 of this illustrative
embodiment, ion implantation, which decreases the light
transmittance of a light transmissive region of the mask 14, does
not occur. Further, an effect is obtained that finer processing can
be achieved in comparison with the conventional repair of the mask
14 using a focused gallium ion beam.
[0119] It has been confirmed by an experiment made by the inventors
of the present application that the stability of the focused
nitrogen ion beam is as high as 1%/hour or less, and even if it is
continuously operated for about 30 days, the atom at the apex of
the tip 1 is not detached, and therefore, the focused nitrogen ion
beam can be continuously formed without causing an interruption of
ion emission or a variation in ion generation position.
[0120] This is a far longer lifetime than the continuous operation
for about 2,250 seconds (at most 38 minutes) described in the above
document, William B. Thompson et al., Proceedings of the 28th
Annual LSI Testing Symposium (LSITS 2008), (2008) pp. 249-254,
"Helium Ion Microscope for Semiconductor Device Imaging and Failure
Analysis Applications". In the actual repair of a mask or the like,
excess and insufficiency of processing strongly affect the light
exposure performance of a mask, and therefore, a beam current
during repair is required to be constant, and it is difficult to
repair a mask when using the gas field ion source capable of
performing continuous irradiation for at most about 38 minutes. On
the other hand, according to the repair apparatus 10 of this
illustrative embodiment capable of performing continuous
irradiation for 30 days, many accurate repair operations can be
performed.
[0121] Further, the repair apparatus 10 of this illustrative
embodiment can visualize a surface state and an elemental
distribution with high resolution and can provide a focused ion
beam having a long lifetime and high stability.
[0122] In a commercially available focused ion beam apparatus using
a conventional gas field ion source, since helium ions are used,
the mass of the ions is very light, and therefore, a sputtering
effect cannot be expected. Therefore, in the case where a light
shielding film and a base glass substrate have a similar
composition and there is no assist gas which causes a difference in
etching speed between the light shielding film and the base glass
substrate, the etching material selectivity is low, and it is
difficult to stop etching at a desired position such as the
boundary surface between the light shielding film and the base
glass substrate. However, by the focused nitrogen ion beam
generated by the repair apparatus 10 of this illustrative
embodiment, it becomes possible to perform processing of a sample,
and further, owing to its focusing performance, further finer local
processing can be achieved even in comparison with the conventional
commercially available focused gallium ion beam processing
apparatus.
[0123] Further, in this illustrative embodiment, the repair
apparatus 10 including the ion beam column 11 and the electron beam
column 12 is described, however, even if the apparatus is
configured such that the electron beam column 12 is omitted and
only the ion beam column 11 is included, the apparatus has the same
effect with respect to mask repair. An example of such a case will
be described below.
[0124] The repair apparatus 10 having only the ion beam column 11
includes a hydrogen gas cylinder (not shown) and a nitrogen gas
cylinder (not shown) in the ion source gas supply section 33, and
enables adjustment in the ion source gas supply section 33 so that
a mixed gas of hydrogen gas and nitrogen gas is supplied through
the gas introduction pipe 33b. Since hydrogen is field-ionized at a
field strength of about 22 V/nm and nitrogen is field-ionized at a
field strength of about 17 V/nm, even if the repair apparatus 10
supplies a mixed gas of hydrogen gas and nitrogen gas into the ion
source chamber 39, hydrogen ions and nitrogen ions can be
separately emitted by adjusting the extraction voltage by the
above-described ion change section. According to this
configuration, the mask 14 is processed by a focused nitrogen ion
beam, and the processed region of the mask can be observed using a
focused hydrogen ion beam. Hydrogen is lighter than nitrogen and
weighs equal to or less than a tenth of the weight of nitrogen, and
therefore, the sputtering damage to the mask surface by irradiation
with a focused ion beam is less in the case of a focused hydrogen
ion beam, and thus, the focused hydrogen ion beam is suitable for
observation of the mask surface. That is, when the field strength
(extraction voltage) at the apex of the tip 1 is adjusted so as to
ionize hydrogen, nitrogen gas is also ionized, however, hydrogen
ions are generated in a narrow region just proximal to the atom at
the apex of the tip 1, however, nitrogen ions are generated in a
wide region at a short distance away from the atom at the apex of
the tip 1. Therefore, when hydrogen ions are focused into a beam,
nitrogen ions are formed into a low current density beam.
Accordingly, when the mask surface is observed using a focused
hydrogen ion beam, nitrogen ions are less likely to damage the mask
surface. On the other hand, hydrogen is not ionized at a field
strength (extraction voltage) at which nitrogen is ionized, and
therefore, hydrogen ions do not reach the mask surface, and thus,
hydrogen ions do not affect the mask surface when the mask is
processed with a focused nitrogen ion beam.
[0125] In such a repair apparatus 10 having only the ion beam
column 11, the gas is not limited to the above combination of
nitrogen and hydrogen, and a combination of nitrogen with at least
any one element selected from neon, argon, krypton, and xenon may
be adopted. Further, the supply mode is not limited to the
continuous supply of a mixed gas on a constant basis, and the gas
species to be supplied according to the frequency of the processing
or observation operation may be limited to one species.
Second Illustrative Embodiment
Mask Repair Method
[0126] Next, a mask repair method using this repair apparatus 10
will be described with reference to FIG. 5. FIG. 5 is a schematic
view of a secondary electron observation image by an ion beam of
the mask 14.
[0127] The mask 14 has a light shielding pattern section 151 and a
light transmissive section 152. There are a defect of a pattern
missing portion 153 in a part of the light shielding pattern
section 151, and a defect of an unnecessary pattern (excess defect)
154. Such a defect can be detected by comparing the original design
information of the mask with the secondary electron observation
image of the surface of the mask after completion of formation, or
by comparing the secondary electron observation image of a region
suspected to have a defect with the secondary electron observation
image of a normal region. The coordinate information of the
location of the defect, the type of the defect, the image
information of the defect, and the like can be stored in the
control unit 20 of the repair apparatus 10 or are used for
obtaining information from an external information apparatus.
[0128] Further, the repair apparatus 10 performs calculation for an
optimum repair method for bringing the mask after repair to a state
equivalent to that of the normal region in consideration of the
location and size of the defect, whether the defect form is a
missing defect or an unnecessary pattern defect, and so on, and can
control the ion beam column 11, the electron beam column 12, the
deposition gas supply section 16, and the etching gas supply
section 17 based on the calculation result.
[0129] Further, for the missing portion 153, the repair apparatus
10 can fill the missing portion 153 by irradiating a nitrogen ion
beam while spraying a carbon gas such as pyrene, naphthalene, or
phenanthrene, or a silane-based gas such as
tetramethylcyclotetrasiloxane (TMCTS) from the deposition gas
supply section 16. The mask 14 with a defect repaired in this
manner enables the transfer of a pattern normally without
transferring a defect even if the mask is exposed to light. On the
other hand, in the case where there is an excess defect 154 on the
mask 14, the repair apparatus 10 irradiates a nitrogen ion beam
while spraying an etching gas onto the excess defect 154.
Accordingly, the excess defect is removed by etching, and also an
ion which decreases the light transmittance of a light transmissive
region of the mask 14 is not implanted. In this manner, the repair
apparatus 10 can repair and normalize the mask 14.
[0130] Further, the repair apparatus 10 can detect a timing when
the light shielding band is removed to expose the base glass
substrate by observing a change in the secondary electron image or
the secondary ion image.
[0131] The repair apparatus 10 acquires a secondary electron image
of a region after repair by irradiation with a nitrogen ion beam
and also stores the image in association with an image before
repair in the control unit 20 or the external information
apparatus, and can confirm the repair performance after completion
of the repair processing. The capability of full automation of such
a series of operations is also the characteristic of the repair
apparatus 10 of this illustrative embodiment. Further, by comparing
a pattern obtained by actual light exposure using the repaired mask
14, the quality of the performance of the mask repair can be
determined.
[0132] Further, in comparison with the mask repair using an
electron beam which is the conventional technique, the choices of
the mask material which can be repaired can be increased, so that
the repair apparatus 10 according to this illustrative embodiment
can also cope with the most advanced photomask material. Further,
according to the repair apparatus 10 of this illustrative
embodiment, by using a nitrogen ion beam, the processing speed can
be greatly improved while maintaining an equivalent processing
accuracy in comparison with a conventional photomask repair
apparatus using a helium field ion source. Moreover, since the ion
source itself is the gas field ion source 30 using the tip 1 of
iridium according to this illustrative embodiment, stable beam
formation can be performed over a long period of time, and at the
same time, stable and highly accurate mask repair can also be
performed over a long period of time.
[0133] By using iridium having high chemical resistance as the tip
1, and also by configuring the apex as described below, the atom at
the apex of the tip 1 is maintained without being detached for a
long period of time, and therefore, an ion can be emitted stably
for a long period of time. Further, since the arrangement in each
minute pyramid side surface at the apex portion of the tip 1 is
dense, impurity particles around the tip 1 are hardly adhered to
the tip 1, and thus, a focused ion beam with an extremely small
variation in current or irradiation position can be formed, and as
a result, a focused ion beam apparatus with high performance can be
provided. Accordingly, the frequency of the regeneration process
for restoring the damaged apex of the tip 1 so as to be constituted
by a single atom can be remarkably reduced to reduce the frequency
of maintenance of the apparatus, and thus, the burden on the users
who operate the apparatus can be greatly reduced. In this
illustrative embodiment, an example of photomask repair is
described. However, the present invention is not limited thereto,
and the repair apparatus 10 can also repair a defect in an EUV
mask, a nano-imprint original plate, or the like.
Third Illustrative Embodiment
Shape of Apex of Iridium Tip
[0134] The shape of the apex of the tip 1 of iridium according to
an illustrative embodiment of the present invention will be
described in detail.
[0135] An iridium crystal has a face-centered cubic structure, and
iridium atoms are located at each of the eight corners and at the
center of each of the six faces of a cube.
[0136] FIGS. 6A and 6B are views created based on the results of
observation of the FIM image of the apex of the tip 1 of iridium
according to this illustrative embodiment, and are model views
showing a pyramid structure when viewing the apex portion of the
tip 1 of iridium according to this illustrative embodiment from the
<210> orientation. FIG. 6A shows an atomic arrangement with
one circle made to correspond to one iridium atom 161. FIG. 6B is a
view schematically showing crystal planes.
[0137] The pyramid structure at the apex portion of the tip 1 of
iridium has a triangular pyramid shape having three side surfaces
(pyramid surfaces) and an apex constituted by only a single iridium
atom 161(162). The constituent atoms of this pyramid structure are
all iridium atoms. As shown in FIG. 6A, the iridium atoms 161
present in the uppermost layer (outermost surface) of each crystal
plane are indicated by white circles, and the indication of the
internal iridium atoms 161 present below the uppermost layer is
omitted. Further, to each of the iridium atoms 161(163) located on
the ridge lines of the triangular pyramid shape, a black triangle
mark is attached. As shown in FIG. 6B, the pyramid structure has
ridge lines 165a, 165b, and 165c formed by each of the three
pyramid surfaces 164a, 164b, and 164c, and an apex 166 constituted
by a single iridium atom 161(162).
[0138] The pyramid surface 164a in FIG. 6B is a {100} crystal
plane, and the pyramid surfaces 164b and 164c in FIG. 6B are {111}
crystal plane.
[0139] FIGS. 7A and 7B are views schematically showing the atomic
arrangement when viewing each of the three pyramid surfaces 164a,
164b, and 164c of the pyramid structure according to this
illustrative embodiment from the front (that is, from the normal
direction). In FIGS. 7A and 7B, the iridium atoms 167 in the
uppermost layer (surface layer) are indicated by white circles, and
the iridium atoms 168 in the second layer immediately below the
uppermost layer are indicated by gray circles, and the indication
of the other iridium atoms is omitted.
[0140] A single iridium atom 162 constituting the apex of this
pyramid structure is defined as the first layer, and in the atomic
arrangement of the second layer immediately below the first layer,
as shown in the following Table 1, three iridium atoms 161 are
located at each vertex of an isosceles triangle close to an
equilateral triangle (for example, an isosceles triangle in which
when assuming that the length of the short side is taken as 1, the
length of the isosceles side is approximately 1.22). In the atomic
arrangement of the third layer immediately below the second layer,
six iridium atoms 161 are located at each vertex and each side of a
triangle.
[0141] Incidentally, the atomic arrangements of the second layer
and the third layer are detected by forcibly detaching the iridium
atom 161(162) at the apex by a strong electric field in the
observation of the FIM image, and it has been found by the
inventors of the present application that they match with the model
views shown in FIGS. 6A and 6B.
[0142] When the tip 1 of iridium in a state where the iridium atom
161(162) at the apex has been detached is used as a needle-shaped
electrode of an electron source or an ion source, or as a probe of
a scanning probe microscope, the amount of a beam current reaching
a sample is decreased or the positional resolution of the scanning
probe microscope is deteriorated, and therefore, such a tip is not
preferred. In this case, by performing a regeneration process for
the tip apex (described later), the atom at the apex is maintained
as a single atom.
TABLE-US-00001 TABLE 1 Arrangement and number of atoms in each
layer Number of atoms Present application Conventional Conventional
Layer (FIG. 6) example (FIG. 8) example (FIG. 9) First layer (apex)
##STR00001## ##STR00002## ##STR00003## Second layer ##STR00004##
##STR00005## ##STR00006## Third layer ##STR00007## ##STR00008##
##STR00009##
[0143] On the other hand, as Comparative Examples, the apex
structures of iridium tips of conventional examples are shown in
FIGS. 8A, 8B, 9A and 9B. FIGS. 8A and 8B are created with reference
to the above-described document, Ivan Ermanoski et al., Surf. Sci.
vol. 596, (2005), pp. 89-97, "Atomic structure of O/Ir(210)
nanofacets", and FIGS. 9A and 9B are created with reference to the
above-described document, Hong-Shi Kuo et al., Nanotechnology, vol.
20, (2009) No. 335701, "A Single-atom sharp iridium tip as an
emitter of gas field ion sources". FIGS. 8A and 9A are model views
showing the pyramid structures when viewing the iridium tips of the
conventional examples from the <210> orientation. FIGS. 8B
and 9B are views schematically showing the crystal planes.
[0144] As shown in FIGS. 8A and 9A, the iridium atoms 171 present
in the uppermost layer (outermost surface) of each crystal plane
are indicated by white circles, and the internal iridium atoms
present below the uppermost layer are indicated by gray circles. At
the apex of the triangular pyramid shape, one iridium atom 171(172)
is located, and to each of the iridium atoms 171(173) located on
the ridge lines of the triangular pyramid shape, a black triangle
mark is attached. As shown in FIGS. 8B and 9B, the pyramid
structure has ridge lines 175a, 175b, and 175c formed by each of
the three pyramid surfaces 174a, 174b, and 174c, and an apex 176
constituted by a single iridium atom 171(172).
[0145] The pyramid surface 174a in FIGS. 8B and 9B is a {110}
crystal plane, and the pyramid surfaces 174b and 174c in FIGS. 8B
and 9B are {311} crystal plane.
[0146] A difference between the atomic arrangement shown in FIG. 8A
and the atomic arrangement shown in FIG. 9A is that the number of
the iridium atoms 171 constituting the base side of the pyramid
surface 174a is an odd number or an even number, and in the atomic
arrangement shown in FIG. 8A, the number is an even number, and in
the atomic arrangement shown in FIG. 9A, the number is an odd
number. Depending on whether the number of the iridium atoms 171
constituting this base side is an odd number or an even number, the
arrangement of the iridium atoms 171 constituting the second layer
and the third layer immediately below the iridium atom 171(172) in
the uppermost layer (surface layer) at the apex varies. The second
layer in the atomic arrangement shown in FIG. 8A includes three
iridium atoms 171, and the second layer in the atomic arrangement
shown in FIG. 9A includes six iridium atoms 171. The iridium atom
171(172) in the uppermost layer (surface layer) at the apex in the
atomic arrangement shown in FIG. 9A is located at the intersecting
point of the three ridge lines 175a, 175b, and 175c. On the other
hand, the iridium atom 171(172) in the uppermost layer (surface
layer) at the apex in the atomic arrangement shown in FIG. 8A is
disposed at a slightly protruding position deviated from the
intersecting point of the three ridge lines 175a, 175b, and
175c.
[0147] In the pyramid structures of the iridium tips of the
conventional examples shown in FIGS. 8A and 9A, the interval
between each of the iridium atoms 171(173) located on each of the
ridge lines 175a, 175b, and 175c is wider than in the pyramid
structure of the tip 1 of iridium of this illustrative embodiment
shown in FIG. 6A. Therefore, the inclination of each of the ridge
lines 175a, 175b, and 175c, in other words, the inclination of each
of the pyramid surfaces 174a, 174b, and 174c is smaller than the
inclination of each of the ridge lines 165a, 165b, and 165c and
each of the pyramid surfaces 164a, 164b, and 164c of the pyramid
structure of the tip 1 of iridium of this illustrative embodiment.
That is, the apex portion of the tip 1 of iridium of this
illustrative embodiment is sharper than the apex portions of the
iridium tips of the conventional examples, and has a structure in
which the electric field is concentrated on the apex of the tip 1
of iridium. Accordingly, the tip 1 of iridium of this illustrative
embodiment can achieve ion emission at a lower extraction voltage
than the iridium tips of the conventional examples, and therefore,
the burden on a power source which applies an extraction voltage
can be reduced, and also the occurrence of abnormal discharge
between the apex of the tip 1 of iridium and an extraction
electrode (for example, the extraction electrode 32 shown in FIG.
2, or the like) can be prevented.
[0148] FIGS. 10A and 10B are views schematically showing the atomic
arrangement when viewing each of the three pyramid surfaces 174a,
174b, and 174c of the pyramid structure of the iridium tip of the
conventional example from the front (that is, from the normal
direction). In FIGS. 10A and 10B, the iridium atoms 177 in the
uppermost layer (surface layer) are indicated by white circles, and
the iridium atoms 178 in the layer immediately below the uppermost
layer are indicated by gray circles, and the indication of the
other iridium atoms is omitted. Further, the vertical and
horizontal atomic arrangement in each pyramid surface is not
cared.
[0149] As shown in the above Table 1, the number of iridium atoms
in the first layer, the second layer, and the third layer of the
pyramid structure of the tip 1 of iridium of this illustrative
embodiment is one, three, and six, respectively, however, the
number of iridium atoms in the first layer, the second layer, and
the third layer of the pyramid structure of the iridium tip of the
conventional example shown in FIG. 8A is one, three, and ten,
respectively, and the number of iridium atoms in the first layer,
the second layer, and the third layer of the pyramid structure of
the iridium tip of the conventional example shown in FIG. 9A is
one, six, and fifteen, respectively. That is, with respect to the
pyramid structure of the tip 1 of iridium of this illustrative
embodiment and the pyramid structure of the iridium tip of the
conventional example, it is apparent that the atomic arrangement up
to the three layers is structurally different between the iridium
tip of the conventional example and the tip 1 of iridium of this
illustrative embodiment.
[0150] Further, the pyramid structure of the tip 1 of iridium of
this illustrative embodiment and the pyramid structure of the
iridium tip of the conventional example differ in the indices of
crystal planes constituting the pyramid surfaces. That is, the
crystal plane and the {111} crystal plane constituting the pyramid
surfaces of the pyramid structure of the tip 1 of iridium of this
illustrative embodiment are low index planes having a higher atomic
density than the {110} crystal plane and the {311} crystal plane
constituting the pyramid surfaces of the pyramid structure of the
iridium tip of the conventional example. For example, it is
visually confirmed that in the atomic arrangement in the outermost
surface layer of the pyramid structure of the tip 1 of iridium of
this illustrative embodiment shown in FIGS. 7A and 7B, the iridium
atoms are more densely arranged as compared with the atomic
arrangement in the outermost surface layer of the pyramid structure
of the iridium tip of the conventional example shown in FIGS. 10A
and 10B.
[0151] For example, in a quantitative comparison, when the lattice
constant is represented by d, the distance doff)) between adjacent
atomic rows in the {100} crystal plane of the tip 1 of iridium of
this illustrative embodiment shown in FIGS. 7A and 7B is 0.50 d,
and the distance doll) between adjacent atomic rows in the {111}
crystal plane thereof is 0.61 d. On the other hand, with respect to
each of the {311} crystal plane and the {110} crystal plane of the
iridium tip of the conventional example shown in FIGS. 10A and 10B,
the distance d.sub.(311) is 1.17 d, and the distance d.sub.(110) is
1.00 d. That is, as compared with the distance between the atomic
rows in the pyramid surface of the pyramid structure of the tip 1
of iridium of this illustrative embodiment, the distance between
the atomic rows in the pyramid surface of the pyramid structure of
the iridium tip of the conventional example is wider.
[0152] Further, when the planar atomic density in the uppermost
layer in each crystal plane is represented by n, in consideration
that the lattice constant d of iridium is 0.3839 nm, the density n
in the {100} crystal plane is 13.6.times.10.sup.18/m.sup.2 and the
density n in the crystal plane is 15.7.times.10.sup.18/m.sup.2,
however, the density n in the {110} crystal plane is
9.6.times.10.sup.18/m.sup.2 and the density n in the {311} crystal
plane is 8.2.times.10.sup.18/m.sup.2. That is, as compared with the
atomic density in the outermost surface of the pyramid structure of
the tip 1 of iridium of this illustrative embodiment, the atomic
density in the outermost surface of the pyramid structure of the
iridium tip of the conventional example is further decreased, and a
space between each of the atoms present on the surface is wider in
the conventional example than in this illustrative embodiment.
[0153] As described above, since the distance between the atomic
rows in the outermost surface layer in the pyramid structure of the
iridium tip of the conventional example is wide and the planar
atomic density is low, it is presumed that, for example, the
probability that a different type of atom or molecule drifting
around the tip is fit in the space between each of the iridium
atoms is high. The fitting of this different type of atom in the
space may deteriorate the atomic arrangement of the iridium crystal
at the apex of the iridium tip and disturb the electric field
distribution at the apex of the iridium tip. As a result, the ion
current emitted from the apex of the iridium tip may be unstable,
and thus, the current of an ion beam irradiated on the surface of
the sample may vary to cause disturbance of an observation image or
disturbance of a processed surface. Further, such a different type
of atom fit in the space between the iridium atoms cannot be easily
removed, and therefore, when image disturbance or ion beam current
variation occurs, a process requiring a complicated operation and a
long time is needed, for example, a process in which the pyramid
structure of the iridium tip is removed once by a high electric
field, and the pyramid structure is produced again to stabilize ion
emission is needed, and so on, and thus, a problem arises that a
continuous observation or processing is difficult to perform.
[0154] On the other hand, in the one {110} crystal plane and the
two {111} crystal planes constituting the pyramid surfaces of the
pyramid structure of the tip 1 of iridium of this illustrative
embodiment, the atomic distance is smaller than in the conventional
example, and therefore, fitting of a different type of atom in a
space between the iridium atoms is prevented, and the tip is merely
brought to such a state that a different type of atom is adhered
(physically adsorbed or the like) onto the crystal planes. In this
case, a substance adhered onto the crystal planes can be easily
detached by slight heating or by adjustment to a weaker electric
field than a field strength necessary for ionization of nitrogen
gas to be applied to the tip 1 of iridium, and therefore, the
triangular pyramid structure of the crystal constituted by only
iridium atoms can be always maintained. As a result, the ion
emission current is stable for a long period of time, and a
variation in current of an ion beam irradiated on a sample can be
prevented, and thus, a less disturbed observation image or a less
disturbed processed surface can be obtained.
[0155] Further, the pyramid structure of the tip 1 of iridium of
this illustrative embodiment is configured such that the atomic
distance is small, and therefore, it is approved that the tip 1 of
iridium is strong against external disturbance such as
temperature.
[0156] As described above, the tip 1 of iridium of this
illustrative embodiment has a sharper pyramid structure than that
of the iridium tip of the conventional example, and therefore, can
achieve ion emission at a lower voltage, and also is strong against
external disturbance, and has a structure such that impurities are
hardly adhered thereto, and thus can achieve stable electron
emission, ion emission, or the like for a long period of time.
[0157] Incidentally, the tip 1 of iridium of this illustrative
embodiment described above has a structure in which the apex of the
tip member of an iridium single crystal is sharpened at the atomic
level, however, it is not limited thereto, and the surface of the
sharpened tip 1 of iridium may be coated with an iridium thin film
by plating or the like.
Fourth Illustrative Embodiment
Iridium Tip Production Apparatus
[0158] Next, with reference to FIG. 11, a tip production apparatus
201 for further sharpening the tip 1 of iridium having undergone
electrolytic polishing (described later), and processing into the
tip 1 of iridium having an apex constituted by a single iridium
atom will be described.
[0159] FIG. 11 is a schematic structural view of the tip production
apparatus 201. The tip production apparatus 201 includes a
placement section 203 for placing the tip assembly 31, an
extraction electrode 205 which generates a high electric field
between the electrode and the tip 1 of iridium to emit ions 204
from the apex (tip apex) of the tip 1 of iridium, a power source
206 which applies an accelerating voltage of the ions 204 to the
tip 1 of iridium and also heats the tip 1 of iridium, a detector
(for example, Multi Channel Plate (MCP), or the like) 207 which
detects the ions 204 emitted from the tip 1 of iridium, and a
vacuum vessel 208 which accommodates these components therein.
[0160] Further, the tip production apparatus 201 includes an
exhaust device 209 which maintains the inside of the vacuum vessel
208 in a vacuum state, a camera (for example, a CCD camera or the
like) 211 which takes (or observes) an FIM image generated by the
detector 207 through a view port 210, a computing device 212 which
records the FIM image taken by the camera 211 and also controls the
power source 206, and a monitor 213 which displays the FIM image
taken by the camera 211, and the like.
[0161] Further, the tip production apparatus 201 includes a gas
supply device 214 which supplies a gas to be ionized to the
surroundings of the tip 1 of iridium, a cooling device 215 which
cools the tip 1 of iridium and, if necessary, the gas supplied from
the gas supply device 214, a movable Faraday cup 216 which detects
the current of the ions 204 emitted from the tip 1 of iridium, a
moving mechanism 217 which moves the Faraday cup 216, and the
like.
[0162] The base pressure in the vacuum vessel 208 is set to
approximately 2.times.10.sup.-8 Pa. The surface of the tip apex is
preferably maintained in a clean state, and the base pressure is
preferably lower. To the vacuum vessel 208, the gas supply device
214 is attached.
[0163] The gas supply device 214 can supply a gas, which is a raw
material of the ions 204, into the vacuum vessel 208. This gas is
an easily available high purity gas (for example, having a purity
of 99.999% or more, etc.). This gas may be further subjected to a
gas purifier (not shown) so as to decrease the impurity
concentration to about several ppb levels. It is necessary to
decrease the impurity concentration for increasing the time for
which the pyramid structure which is a nanostructure of the tip 1
of iridium can be maintained, and it is preferred to decrease the
base pressure in the vacuum vessel 208 and also to decrease the
impurity concentration in the gas.
[0164] In this illustrative embodiment, one or a plurality of gas
vessels (not shown) filled with a gas such as hydrogen, oxygen,
nitrogen, helium, neon, argon, krypton, or xenon is/are disposed in
the gas supply device 214, and a desired gas can be supplied in an
appropriate amount as needed. In the gas supply device 214, a valve
214a is adjusted so as to supply an appropriate amount of a given
gas species to the apex of the tip 1 of iridium, and the gas is
gradually supplied to the surroundings of the tip 1 of iridium from
a nozzle 214b in the vicinity of the tip 1 of iridium.
[0165] The tip 1 of iridium is connected to the cooling device 215
such as a cryofreezer through a connection section 215a, and the
cooling temperature is adjusted to about 60 K. According to this
configuration, the FIM image generated by the detector 207 becomes
brighter, and a sharp image can be taken by the camera 211. This
cooling temperature may be changed according to the gas species to
be supplied by the gas supply device 214.
[0166] The power source 206 is a high voltage current power source
and is connected to the tip 1 of iridium through a feedthrough (not
shown) in the vacuum vessel 208, and can apply a high voltage to
the tip 1 of iridium through the filament 37. The power source 206
is configured to be connected so that, for example, the current
power source has a potential output of a high voltage power source.
The voltage to be output from the power source 206, a current to be
applied to the filament 37 by the power source 206, and the like
are controlled by the computing device 212 connected to the power
source 206. The computing device 212 can automatically control the
current and voltage output from the power source 206, and for
example, can change the current at a constant rate. According to
this configuration, the computing device 212 can repeat the
remolding conditions with high reproducibility.
[0167] The extraction electrode 205 has, for example, ground
potential, and a positive voltage is applied to the tip 1 of
iridium. The ions 204 generated at the tip apex are extracted along
the electric field generated by the tip 1 of iridium and the
extraction electrode 205, and pass through an orifice 205a provided
in the extraction electrode 205 and are output as an ion beam. The
ion beam has an energy corresponding to the voltage applied to the
tip 1 of iridium and is emitted from the extraction electrode 205
to the detector 207.
[0168] Incidentally, in this illustrative embodiment, the potential
of the tip 1 of iridium can be made variable by causing the
extraction electrode 205 to have an arbitrary potential. That is,
it is possible to configure the apparatus to have a triple
structure including the vacuum vessel 208, the extraction electrode
205, and the tip 1 of iridium in this order from the outside. In
this case, the computing device 212 arbitrarily sets the potential
of the tip 1 of iridium, and sets the potential of the extraction
electrode 205 to a potential, which is negative with respect to the
potential of the tip 1 of iridium, and at which a gas, which is a
raw material of the ions 204, is ionized. According to this
configuration, an accelerating energy of the ion beam can be
appropriately set.
[0169] The detector 207 and a screen 207a are disposed along the
extension of the line connecting the apex of the tip 1 of iridium
to the orifice 205a of the extraction electrode 205. To the
detector 207, a predetermined voltage (for example, +1.5 kV or the
like) is applied, and generated electrons are amplified. To the
screen 207a, a predetermined voltage (for example, +3.0 kV or the
like) is applied, and the electrons amplified by the detector 207
collide with the screen 207a, and a phosphor of the screen 207a
emits light. This emitted light is projected on the screen 207a and
an image thereof is taken by the camera 211 through the view port
210, and is set so that it can be observed as an FIM pattern (FIM
image). The camera 211 is connected to the computing device 212,
and the images taken periodically are stored in the computing
device 212.
[0170] When the number of bright points in the FIM image
corresponding to the atomic arrangement at the apex of the tip 1
becomes one, it can be determined that the apex of the tip 1 of
iridium is constituted by a single atom. At this time, the Faraday
cup 216 is moved by the moving mechanism 217 so that the ion beam
enters the Faraday cup 216, and the current of the beam entering
the Faraday cup 216 is converted into a signal and introduced into
the computing device 212. The beam current measurement enables the
measurement of a current value at this time point and also enables
the continuous measurement of a current variation over a long
period of time.
[0171] In the vacuum vessel 208 of the tip production apparatus
201, a high vacuum state is always maintained, and therefore, an
appropriate mechanism may be provided such that the tip 1 of
iridium is temporarily kept in a preliminary exhaust chamber (not
shown), and a process such as cleaning by heating at a high
temperature for contaminations (impurities and the like) adhered to
the tip 1 of iridium is performed, and thereafter, the tip 1 of
iridium is introduced into the vacuum vessel 208.
[0172] Incidentally, the tip production apparatus 201 can also be
used for sharpening a tungsten tip.
Fifth Illustrative Embodiment
Iridium Tip Production Method
[0173] As shown in FIG. 12, an iridium tip production method
includes a wet etching step S10, an FIB processing step S20, a
field-induced gas etching step S30, and a remolding step S40, which
are performed sequentially. Hereinafter, the respective steps will
be described.
[0174] (1) Wet Etching Step
[0175] First, in the wet etching step S10, as a raw material of the
tip 1 of iridium to be sharpened, a tip member, which is a
rod-shaped iridium single crystal having a given shape (for
example, a diameter of 0.3 mm, a length of 8 mm, etc.), and in
which the longitudinal direction is aligned with <210>
orientation, is used. Then, for example, by wet etching, the
rod-shaped tip member is sharpened until the diameter of the apex
in a conical shape is decreased to a predetermined value (for
example, from several hundreds of nanometers to several
micrometers, or the like), whereby the tip 1 of iridium is
formed.
[0176] Specifically, the tip member of iridium and a counter
electrode of platinum are immersed in an electrolytic solution of,
for example, potassium hydroxide (for example, 1 mol/L), and an AC
voltage is applied between these two electrodes (that is, between
the tip member and the counter electrode) to achieve electrolytic
polishing. The AC voltage to be applied is set to, for example,
approximately 30 V (rms) at a frequency of 60 Hz. By this wet
etching step S10, the apex of the tip member is formed into a
conical shape having an apex diameter of several hundreds of
nanometers to several micrometers. After completing the wet
etching, impurities such as the electrolytic solution are removed
from the tip 1 of iridium by washing the tip 1 of iridium with
water and acetone, or the like.
[0177] (2) FIB Processing Step
[0178] Subsequently, in the FIB processing step S20, in the case
where the diameter of the apex of the tip 1 of iridium is further
decreased to about several tens of nanometers to several hundreds
of nanometers, after performing the wet etching step S10, the tip 1
of iridium is introduced into a known gallium focused ion beam
(Ga-FIB) apparatus (not shown), and FIB processing is performed,
whereby the diameter of the apex is decreased to about several tens
of nanometers to several hundreds of nanometers.
[0179] (3) Field-Induced Gas Etching Step
[0180] Subsequently, in the field-induced gas etching step S30, the
tip 1 of iridium is placed in a gas field ion source 30 or the tip
production apparatus 201, and the surroundings of the tip 1 of
iridium are brought to a vacuum state. A case where the tip
production apparatus 201 shown in FIG. 11 is used will be described
as an example. The pressure in the vacuum vessel 208 is adjusted to
a base pressure (for example, 2.times.10.sup.-8 Pa, or the like),
and the cooling temperature of the tip 1 of iridium is adjusted to
a predetermined temperature (for example, about 60 K). Then, helium
is supplied from the gas supply device 214 into the vacuum vessel
208 until the pressure becomes, for example, 1.times.10.sup.-4 Pa
or the like. The computing device 212 controls the power source 206
so as to apply a voltage to the tip 1 of iridium. When the voltage
applied to the tip 1 of iridium (tip voltage) reaches, for example,
about 4 kV, the FIM pattern (FIM image) of helium is imaged by the
camera 211.
[0181] In the tip 1 of iridium having undergone Step S20 or the tip
1 of iridium with a damaged apex structure, impurities are adsorbed
on the surface of the apex of the tip 1 of iridium, and therefore,
a pattern with no crystallinity is obtained. When the tip voltage
is gradually increased and the field strength at the tip apex is
increased higher than the evaporation field strength of iridium,
the iridium atom begins to be field-evaporated. When the several
atomic layers on the surface of the apex of the tip 1 of iridium
are field-evaporated, clean crystalline iridium surface is exposed.
The tip voltage at this time is increased to, for example, about 5
kV to 6 kV since the radius of curvature of the apex of the tip 1
is slightly increased. Then, when the tip voltage is decreased by,
for example, about 1 kV, the tip voltage reaches an optimum voltage
(best imaging voltage) at which an image is obtained by helium, and
thus, an FIM pattern in which the atoms are regularly arranged
appears. When such a clean surface is confirmed, the supply of
helium into the vacuum vessel 208 from the gas supply device 214 is
stopped. When the surface becomes a clean surface, a defect may
sometimes be observed in the iridium crystal. In the case where
there is a crystal defect in a clean surface, a desired pyramid
structure cannot be produced in the subsequent remolding step S40.
In such a case, by combining field-induced gas etching with field
evaporation, the tip end surface layer of the tip 1 is removed to a
region where there is no crystal defect. Based on if a clean
surface is observed, it is determined whether the process proceeds
to Step S40.
[0182] Subsequently, the extraction voltage is set to a value lower
than the highest voltage applied in the field evaporation by about
0.5 kV (for example, about 4.5 kV to 5.5 kV), and as a gas for
etching, nitrogen or oxygen is supplied to the surroundings of the
tip 1 of iridium from the gas supply device 214 so that the
pressure in the vacuum vessel is from about 1.times.10.sup.-4 Pa to
1.times.10.sup.-3 Pa.
[0183] In this case, the extraction voltage and the region to be
subjected to field-induced gas etching of the tip 1 of iridium have
a predetermined correspondence relation. That is, when the
extraction voltage is low, an apex region of the tip 1 of iridium
where the electric field is strong is etched with a field-induced
gas, and when the extraction voltage is high, a peripheral region
(for example, a base region or the like) of the tip 1 of iridium
except for the apex region is etched with a field-induced gas.
Therefore, in this step, the extraction voltage is set high to such
an extent that helium is field-ionized, so that the apex region of
the tip 1 of iridium is left, and the peripheral region thereof is
etched. Accordingly, the number of iridium atoms which move in the
remolding step S40 (described later) can be decreased, and the time
required for performing the remolding step can be reduced. Further,
the apex of the tip 1 of iridium is formed into a narrow and sharp
shape, and therefore, the growth of the pyramid structure at an
undesired position in the remolding step can be prevented. Here,
when the field-induced gas etching proceeds, the apex is narrowed
and sharpened, and therefore, the extraction voltage is decreased
so that the atom at the apex is not field-evaporated.
[0184] When the apex is narrowed and sharpened to a desired size,
while the extraction voltage is kept applied, the supply of the gas
for etching by the gas supply device 214 is stopped, and the
residual gas for field-induced gas etching is exhausted under
vacuum. The best imaging voltage for helium at this time is
approximately 3.6 kV. Thereafter, the extraction voltage is
decreased so as to obtain a field strength at which nitrogen is
field-ionized. By sufficiently performing vacuum exhaustion, the
etching of the apex region of the tip 1 of iridium can be
prevented, or by rapidly decreasing the extraction voltage, the
field-induced gas etching of the apex region of the tip 1 of
iridium can be further prevented.
[0185] Further, in the case where a crystal defect exists in the
vicinity of the apex of the tip 1 of iridium, the extraction
voltage is adjusted so that the apex region of the tip 1 of iridium
is subjected to field-induced gas etching until the crystal defect
is removed. Accordingly, even if a crystal defect exists in the
vicinity of the apex of the tip 1 of iridium, the crystal defect is
removed by etching.
[0186] (4) Remolding Step
[0187] Subsequently, in the remolding step S40, by using the tip
production apparatus 201, a pyramid structure which is a
nanostructure is formed at the apex of the tip 1 of iridium.
[0188] The extraction voltage is decreased to, for example, about
1/3 of the optimum imaging voltage for helium, that is, about 1.2
kV. This voltage substantially matches with the nitrogen imaging
voltage. Then, nitrogen gas is introduced into the vacuum vessel
208, and the pressure is adjusted to, for example,
1.times.10.sup.-3 Pa or the like. The extraction voltage is finely
adjusted so that an FIM pattern of nitrogen can be observed. Then,
the remolding step of this illustrative embodiment is started. In
the remolding step S40 in this illustrative embodiment, remolding
is performed in a nitrogen atmosphere unlike the conventional
remolding which is performed under high vacuum without introducing
a gas into the vacuum vessel 208. Further, in the conventional
remolding, heating is performed while maintaining the current of
the filament 37 constant, and the tip voltage is increased, and
thereafter, the tip apex is sharpened while decreasing the current
of the filament 37. In contrast, in this illustrative embodiment,
sharpening is performed according to the following procedure.
[0189] First, the tip 1 of iridium is heated by applying a current
of, for example, 3.5 A for 3 minutes to the filament 37 in a state
where the extraction voltage is applied thereto. After completion
of this heating, an FIM pattern of nitrogen is imaged and observed
by the camera 211.
[0190] Here, in the case where the FIM pattern of nitrogen imaged
and observed is almost not changed, heating is performed by
increasing the current in increments of, for example, 0.1 A.
[0191] Then, when the current of the filament 37 is increased to,
for example, approximately 3.9 A, a change is observed in the FIM
pattern. That is, among the respective crystal planes as shown in
FIG. 15, the {111} crystal plane is expanded, and the {110} crystal
plane is shrunk. Further, the {100} crystal plane is expanded, and
the {311} crystal plane is shrunk. When the facet planes are
largely changed in this manner, the apex of the tip 1 of iridium is
sharpened, and therefore, the tip voltage at which the FIM pattern
of nitrogen is imaged and observed (that is, the tip voltage at
which the FIM pattern of nitrogen is seen) by the camera 211 is
decreased by, for example, several hundreds of volts. Incidentally,
the tip voltage at which the FIM pattern of nitrogen is seen is
approximately 0.9 kV or so.
[0192] Then, when the voltage at which the FIM pattern of nitrogen
is seen is decreased, the current of the filament 37 is fixed at,
for example, 3.9 A, and the tip voltage when heating is set to, for
example, a value of 20% to 180% of the extraction voltage at which
the FIM pattern of nitrogen is seen at this time point. In many
cases, the tip voltage is changed to a value on the decreasing
side. Incidentally, the tip voltage when heating is not limited to
changing to a value on the decreasing side, which is equal to or
lower than the tip voltage at which the FIM pattern of nitrogen is
seen at this time point, and for example, according to the changing
state of the crystal at the apex of the tip 1 of iridium obtained
based on the FIM pattern of nitrogen or the like, the tip voltage
may be changed to a value on the increasing side, which is equal to
or higher than the extraction voltage at which the FIM pattern of
nitrogen is seen at this time point.
[0193] Then, when heating is repeated by, for example, setting the
tip voltage to 0.5 kV and the current of the filament 37 to 3.9 A,
a bright point pattern including several bright points is imaged
and observed by the camera 211.
[0194] Then, finally, only one bright point is left, and the apex
of the tip 1 of iridium becomes a state where the apex of the tip 1
of iridium is constituted by only a single atom.
[0195] As an example of changing the extraction voltage to a value
on the increasing side, which is higher than the value at which the
FIM pattern of nitrogen is seen, there is a case where, when
remolding is performed at an 80% of the extraction voltage, two
{111} crystal plans do not grow with a ridge line formed by being
interposed between the two {111} crystal planes remaining double,
and in that case, when the extraction voltage is increased to 120%
by gradually increasing the extraction voltage, the {111} crystal
planes grow so that a single ridge line can be formed.
[0196] Incidentally, when the above-described remolding step S40 is
performed without performing the field-induced gas etching S30, a
problem arises that not only a desired pyramid structure is formed
at a desired position, but also a plurality of pyramid structures
are formed in some cases. When a plurality of pyramid structures
are formed, the electric field at the apex of the tip is disturbed,
and many unfavorable situations occur, for example, ions are
emitted from a plurality of positions, a focused ion beam current
to be required is decreased, and the like, and therefore, the above
problems can be solved by performing Step S30 prior to Step 40.
[0197] Incidentally, in the remolding step S40, the tip 1 of
iridium can also be produced by using oxygen gas in place of
nitrogen gas. That is, oxygen gas is supplied in place of nitrogen
gas into the vacuum vessel 208 from the gas supply device 214, the
tip voltage is set so that the FIM pattern of nitrogen is seen, and
the tip 1 of iridium is heated.
[0198] Then, the supply of oxygen gas is stopped, and nitrogen gas
is supplied, and the tip voltage at which the FIM pattern of
nitrogen is seen is confirmed. The supply of nitrogen gas is
stopped at this voltage, and oxygen gas is supplied, and the tip 1
of iridium is heated. These processes are repeated. However, at
this time, the heating temperature is gradually increased.
[0199] Then, when it is detected that the atom at the apex of the
tip 1 of iridium begins to move based on, for example, the FIM
pattern of nitrogen or the like, the extraction voltage is set to,
for example, a value of 20% to 180% of the extraction voltage at
which the FIM pattern of nitrogen is seen at this time point, and
oxygen gas is supplied, and the tip 1 of iridium is heated. In many
cases, the extraction voltage is changed to a value on the
decreasing side. Incidentally, the tip voltage when heating is not
limited to changing to a value on the decreasing side, which is
equal to or lower than the tip voltage at which the FIM pattern of
nitrogen is seen at this time point, and for example, according to
the changing state of the crystal at the apex of the tip 1 of
iridium obtained based on the FIM pattern of nitrogen or the like,
the tip voltage may be changed to a value on the increasing side,
which is equal to or higher than the tip voltage at which the FIM
pattern of nitrogen is seen at this time point.
[0200] Then, finally, only one bright point is left, and the apex
of the tip 1 of iridium becomes a state where the apex of the tip 1
of iridium is constituted by only a single atom.
[0201] Further, in place of nitrogen, helium or hydrogen may also
be used. For example, in the case where nitrogen gas is used as an
ion source gas, remolding is performed using nitrogen gas, and in
the case where hydrogen gas is used as an ion source gas, remolding
is performed using hydrogen gas, whereby an ion beam can be
irradiated without changing the introduction gas.
[0202] According to the processing of the above-described Step S10
to Step S40, the tip 1 of iridium including a pyramid structure
which has an apex with <210> orientation and constituted by
only a single atom surrounded by one {100} crystal plane and two
{111} crystal planes as shown in FIGS. 6A and 6B can be
produced.
[0203] In the case where the tip assembly 31 is mounted not on the
tip production apparatus 201 shown in FIG. 11, but on the gas field
ion source 30 within an apparatus capable of forming a focused ion
beam such as the repair apparatus 10, the above-described
field-induced gas etching step S30 and the remolding step S40 can
be performed within the gas field ion source 30, in which a beam is
emitted. In this case, a step of relocating the tip assembly 31
from the outside of the gas field ion source 30 is not needed, and
therefore, the adhesion of impurities during relocation of the tip
assembly 31 can be prevented, and also, a step of relocating the
tip 1 of iridium from the outside of the gas field ion source 30 is
not needed, and therefore, the adhesion of impurities during
relocation of the tip 1 of iridium can be prevented, and thus, the
work efficiency can be improved. That is, in an apparatus capable
of forming a focused ion beam such as the repair apparatus 10, in
the case where the sharp end of the tip 1 of iridium is damaged,
the regeneration operation can be performed at the place where the
tip 1 is located. In particular, the field-induced gas etching step
S30 and the remolding step S40 using nitrogen and the formation of
a focused nitrogen ion beam can be performed using only nitrogen
without changing the gas species to be introduced into the gas
field ion source 30.
Sixth Illustrative Embodiment
Repair Apparatus for Original Plate (Mold) for Nano-Imprint
Lithography
[0204] In nano-imprint lithography, an original plate having a
microrelief pattern with high precision is prepared, the original
plate is pressed against a transfer destination substrate coated
with a softened resist while applying a pressure thereto, and the
original plate is detached from the substrate after curing the
resist, whereby the microrelief pattern of the original plate is
transferred to the resist. Then, the overall film thickness is
decreased with an oxygen plasma to expose the transfer destination
substrate, and dry etching is performed, whereby the pattern is
transferred to the substrate.
[0205] In conventional photolithography, a photomask in which a
light shielding film is patterned on a transparent substrate is
used, however, in nano-imprint lithography, light exposure is not
employed, and therefore, this technique has an advantage that the
apparatus can be simplified without needing to develop a light
exposure apparatus having a short-wavelength light source which has
an extremely high degree of difficulty. Further, the detached
original plate can be used repeatedly.
[0206] Recently, there has been adopted photocurable nano-imprint
lithography in which quartz is used as an original plate, and in
place of a resist, a photocurable resin is applied on a transfer
destination substrate, the original plate is pressed against the
substrate, ultraviolet (UV) light is irradiated on the upper
surface of the original plate to cure the photocurable resin to
transfer the relief pattern of the original plate, and thereafter,
the original plate is detached from the substrate. In the case of
using a photocurable resin, the processing can be performed at room
temperature, and therefore, this technique has an advantage that a
decrease in positional accuracy due to thermal expansion of an
original plate or a transfer destination substrate as in the case
of using a thermally curable resin does not occur. There has been
known a method for repairing a nano-imprint original plate using a
focused gallium ion beam according to a known technique.
[0207] The repair apparatus 10 of this illustrative embodiment can
repair a pattern error in the above-described original plate for
nano-imprint lithography, and includes at least the gas field ion
source 30 which generates nitrogen ions, and therefore can repair a
missing pattern with a deposition film on the mask 14 by a gas
supplied from the deposition gas supply section 16 and the etching
gas supply section 17. Further, an unnecessary pattern can be
removed. The tip 1 of iridium is mounted, and further, the tip is
configured to have a pyramid structure which has an apex with
<210> orientation and constituted by a single atom surrounded
by one {100} crystal plane and two {111} crystal planes. According
to this configuration, a focused nitrogen ion beam can be stably
formed for a long period of time, and therefore, a nano-imprint
original plate can be repaired with the focused nitrogen ion
beam.
[0208] Another illustrative embodiment of the repair apparatus for
an original plate for nano-imprint lithography will be described.
This repair apparatus is configured to also mount an electron beam
column 12 on the above-described repair apparatus 10 for an
original plate for nano-imprint lithography. With an electron beam
from this electron beam column 12, a normal pattern corresponding
to a pattern error portion can be imaged from a plurality of
directions, and from the information of the plurality of images,
the three-dimensional shape data of the normal pattern can be
reconstructed. In the case where a pattern error is a deletion,
missing, or deformation error, the original plate is flattened once
by removing the pattern error portion with a focused ion beam, and
based on the above-described three-dimensional shape information,
the normal pattern can be three-dimensionally printed by deposition
with the above-described focused ion beam. In the case where there
are a plurality of pieces of the same pattern, the same pattern can
be printed one after another according to the same
three-dimensional shape information.
[0209] Incidentally, in the case where a normal pattern is
three-dimensionally printed, it is not limited to obtaining the
three-dimensional shape information of the pattern shape using an
electron beam or the like at the place where the pattern is located
as described above, and the three-dimensional shape information of
the normal pattern may be retrieved in the repair apparatus from an
external storage unit.
[0210] Incidentally, this repair apparatus for an original plate
for nano-imprint lithography may be used as a three-dimensional
nano-printer for regeneration of a minute structure other than
repair of an original plate for nano-imprint lithography.
Seventh Illustrative Embodiment
Another Configuration of Mask Repair Apparatus
[0211] In the above first illustrative embodiment, the repair
apparatus 10 including the ion beam column 11 and the electron beam
column 12 is described, however, in this illustrative embodiment,
as another configuration of the repair apparatus 10, an example in
which a scanning probe microscope is provided in the sample chamber
13 will be described.
[0212] A scanning probe microscope (SPM) is a microscope for
magnifying and observing the surface aspect or state of a sample by
scanning the surface of the sample such that the surface of the
sample is traced with a sharpened probe, and one using a tunneling
current flowing between the probe and a sample is called "scanning
tunneling microscope (STM)", and one using an atomic force between
the probe and a sample is called "atomic force microscope
(AFM)".
[0213] In these scanning probe microscopes, it is preferred that
the apex of the probe is constituted by a single atom from the
viewpoint of observation resolution. Even if the probe immediately
after production is terminated with a single atom, by repeatedly
using the probe, the atom at the apex is detached to deteriorate
the observation resolution, or the number of atoms at the apex is
increased to more than one to frequently change the detecting atom,
and therefore, a desired analysis result cannot be obtained.
Accordingly, a scanning probe microscope including a probe capable
of maintaining a state where the apex is constituted by a single
atom for a long period of time so as to have high resolution and
long lifetime has been demanded.
[0214] Therefore, in this illustrative embodiment, the tip 1 of
iridium terminated with a single atom according to the above third
illustrative embodiment is used as the probe of the scanning probe
microscope. Iridium originally has high chemical resistance, and
also due to the superiority that a state where the end is
terminated with a single atom is maintained for a long period of
time, which is the advantageous effect of the invention, a long
lifetime and a high resolution observation result can be
obtained.
[0215] In the basic configuration of the repair apparatus 10 of
this illustrative embodiment, the ion beam column 11 and the
electron beam column 12 are basically the same as those in the
first illustrative embodiment, however, a feature that a scanning
probe microscope is mounted on a vacuum vessel wall surface of the
sample chamber 13 or the sample stage 15 is different from the
configuration of the first illustrative embodiment.
[0216] According to the repair apparatus 10 of this illustrative
embodiment, the surface shape of the pattern repaired by a nitrogen
ion beam can be measured at the atomic order with this scanning
probe microscope at the place where the pattern is located in the
repair apparatus. If the apparatus is configured to mount the
electron beam column 12 on the repair apparatus 10, a region to be
measured by the scanning probe microscope can be detected based on
a secondary electron image in advance, and therefore, the process
transition to SPM measurement can be performed promptly. Further, a
defect can be repaired by measuring a mask at the atomic order with
the scanning probe microscope, determining a defect, and setting
the irradiation amount of a nitrogen ion beam based on the data
obtained by the determination. Further, by using the probe of the
scanning probe microscope, a mask can be repaired by directly
removing or moving atoms on the mask.
* * * * *