U.S. patent application number 15/064916 was filed with the patent office on 2016-06-30 for systems and methods for horizontal integration of acceleration sensor structures.
The applicant listed for this patent is Infineon Technologies Dresden GmbH. Invention is credited to Steffen Bieselt, Heiko Froehlich, Thoralf Kautzsch, Andre Roeth, Maik Stegemann, Mirko Vogt.
Application Number | 20160185594 15/064916 |
Document ID | / |
Family ID | 55644316 |
Filed Date | 2016-06-30 |
United States Patent
Application |
20160185594 |
Kind Code |
A1 |
Kautzsch; Thoralf ; et
al. |
June 30, 2016 |
SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION
SENSOR STRUCTURES
Abstract
Embodiments relate to integrated circuit sensors, and more
particularly to sensors integrated in an integrated circuit
structure and methods for producing the sensors. In an embodiment,
a sensor device comprises a substrate; a first trench in the
substrate; a first moveable element suspended in the first trench
by a first plurality of support elements spaced apart from one
another and arranged at a perimeter of the first moveable element;
and a first layer arranged on the substrate to seal the first
trench, thereby providing a first cavity containing the first
moveable element and the first plurality of support elements.
Inventors: |
Kautzsch; Thoralf; (Dresden,
DE) ; Froehlich; Heiko; (Radebeul, DE) ; Vogt;
Mirko; (Dresden, DE) ; Stegemann; Maik;
(Pesterwitz, DE) ; Roeth; Andre; (Dresden, DE)
; Bieselt; Steffen; (Wehlen, DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Infineon Technologies Dresden GmbH |
Dresden |
|
DE |
|
|
Family ID: |
55644316 |
Appl. No.: |
15/064916 |
Filed: |
March 9, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14512916 |
Oct 13, 2014 |
9330929 |
|
|
15064916 |
|
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|
Current U.S.
Class: |
257/418 |
Current CPC
Class: |
H01L 21/3065 20130101;
B81B 2201/0264 20130101; B81C 2203/0764 20130101; B81C 1/00246
20130101; B81B 7/02 20130101; H01L 29/84 20130101; B81B 2207/015
20130101; B81B 2201/0235 20130101 |
International
Class: |
B81B 7/02 20060101
B81B007/02 |
Claims
1. A sensor device comprising: a substrate; a first trench in the
substrate; a first moveable element suspended in the first trench
by a first plurality of support elements spaced apart from one
another and arranged at a perimeter of the first moveable element;
and a first layer arranged on the substrate to seal the first
trench, thereby providing a first cavity containing the first
moveable element and the first plurality of support elements.
2. The sensor device of claim 1, wherein the first trench comprises
a shallow-trench isolation element (STI).
3. The sensor device of claim 1, wherein the first layer comprises
a functional layer.
4. The sensor device of claim 1, wherein the first plurality of
support elements are arranged at at least two corners of the first
moveable element.
5. The sensor device of claim 1, wherein the first plurality of
support elements are arranged along at least two edges of the first
moveable element.
6. The sensor device of claim 1, wherein the first moveable element
has a thickness of about 300 nanometers.
7. The sensor of claim 1, wherein at least one of the first
plurality of support elements has a lateral dimension less than
about 10 micrometers (.mu.m).
8. The sensor of claim 1, further comprising: a second trench in
the substrate; a second moveable element suspended in the second
trench by a second plurality of support elements spaced apart from
one another and arranged at a perimeter of the second moveable
element, wherein the first layer seals the second trench, thereby
providing a second cavity containing the second moveable element
and the second plurality of support elements.
Description
REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional of U.S. application No.
14/512,916 filed on Oct. 13, 2014, the contents of which are
incorporated by reference in their entirety.
FIELD
[0002] The invention relates generally to integrated circuit
sensors, and more particularly to sensors integrated in an
application-specific integrated circuit (ASIC) structure and
methods for producing the sensors, such as by encapsulation of the
sensor between a metal layer and a stack with a dry-etchable
sacrificial layer.
BACKGROUND
[0003] Sensors are commonly used in a variety of applications,
including electronics, automotive and consumer goods, among others.
Some types of sensors comprise a membrane, lamella or other
suitable structure that flexes, deforms or otherwise moves in
response to a physical quantity to be sensed or measured. One
example of such a sensor is a pressure sensor, which can sense or
measure pressure related to a gas, fluid, mechanical or other
force. The flexure, deformation and/or movement of the moveable
portion of the sensor (e.g., the membrane, lamella or other
structure) can be sensed by a variety of technologies, including
capacitive, piezoresistive, piezoelectric, electromagnetic, optical
or some other technology, and the related pressure determined
therefrom. For example, a pressure sensor can comprise a flexible
membrane, typically 5-10 .mu.m thick, that flexes or otherwise
deforms when a pressure is present or when the structure is
accelerated. The flexure of the membrane can be detected
capacitively by an electrode arranged proximate the membrane, as a
capacitance between the membrane and the electrode changes as the
membrane sags or expands and thereby moves closer to or away from
the electrode.
[0004] Regardless of type, sensors often operate as parts of larger
systems and therefore may be integrated within these systems. In
some applications, such as tire pressure sensors, a pressure sensor
can be integrated within a Tire Pressure Monitoring System (TPMS).
Other systems utilizing integrated pressure measurement systems
include airbag Application-Specific Integrated Circuits (ASICs). As
the processes for manufacturing TPMSs and ASICs develop and evolve,
it can be challenging to integrate manufacture of the sensors with
the ASIC without increasing the complexity of or having to alter
the fundamental manufacturing processes. For example, many TPMSs
and ASICs are constructed using CMOS (complementary
metal-oxide-semiconductor) technologies, and integrating pressure
sensor construction into suitable CMOS processes can be complicated
and/or expensive, sometimes requiring changes to the conventional
processing steps or techniques or requiring additional steps. For
example, one attempt to integrate pressure sensor structure
comprising a polycrystalline silicon lamella required at least five
mask planes and a complicated process for removing the sacrificial
layer between the lamella and the substrate to enable the lamella
to flex or move, and it ultimately could not be successfully
integrated in a CMOS process.
[0005] A need therefore remains for improved sensor structures.
SUMMARY
[0006] Embodiments relate to integrated circuit sensors, and more
particularly to sensors integrated in an integrated circuit
structure and methods for producing the sensors.
[0007] In an embodiment, a method of producing a sensor device
comprises providing a substrate; forming a trench in the substrate;
forming a sealing layer on the substrate to seal the trench and
form a cavity, the cavity containing a moveable element and a
plurality of support elements in a sacrificial layer, the plurality
of support elements spaced apart from one another and arranged at a
perimeter of the moveable element; and dry-etching the sacrificial
layer in the cavity via at least one aperture in the sealing layer
to release the moveable element within the trench.
[0008] In an embodiment, a sensor device comprises a substrate; a
first trench in the substrate; a first moveable element suspended
in the first trench by a first plurality of support elements spaced
apart from one another and arranged at a perimeter of the first
moveable element; and a first layer arranged on the substrate to
seal the first trench, thereby providing a first cavity containing
the first moveable element and the first plurality of support
elements.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The invention may be more completely understood in
consideration of the following detailed description of various
embodiments of the invention in connection with the accompanying
drawings, in which:
[0010] FIG. 1 is a side cross-sectional view of a sensor device
according to an embodiment.
[0011] FIG. 2 is a side cross-sectional view of a sensor device
according to an embodiment.
[0012] FIG. 3 is a side cross-sectional view of a sensor device
according to an embodiment.
[0013] FIG. 4 is a top, partially transparent view of a lamella and
support elements according to an embodiment.
[0014] FIG. 5 is a top, partially transparent view of a lamella and
support elements according to an embodiment.
[0015] FIG. 6 is a top, partially transparent view of a lamella and
support elements according to an embodiment.
[0016] FIG. 7 is a top, partially transparent view of a lamella and
support elements according to an embodiment.
[0017] FIG. 8A is a side cross-sectional view of a manufacturing
stage of a sensor device according to an embodiment.
[0018] FIG. 8B is a side cross-sectional view of a manufacturing
stage of a sensor device according to an embodiment.
[0019] FIG. 8C is a side cross-sectional view of a manufacturing
stage of a sensor device according to an embodiment.
[0020] FIG. 8D is a side cross-sectional view of a manufacturing
stage of a sensor device according to an embodiment.
[0021] FIG. 8E is a side cross-sectional view of a manufacturing
stage of a sensor device according to an embodiment.
[0022] FIG. 8F is a side cross-sectional view of a manufacturing
stage of a sensor device according to an embodiment.
[0023] FIG. 9 is a flowchart of a method of manufacturing a sensor
device according to an embodiment.
[0024] FIG. 10 is a side cross-sectional view of a device
comprising a plurality of sensor devices according to an
embodiment.
[0025] While the invention is amenable to various modifications and
alternative forms, specifics thereof have been shown by way of
example in the drawings and will be described in detail. It should
be understood, however, that the intention is not to limit the
invention to the particular embodiments described. On the contrary,
the intention is to cover all modifications, equivalents, and
alternatives falling within the spirit and scope of the invention
as defined by the appended claims.
DETAILED DESCRIPTION
[0026] Embodiments relate to integrated circuit sensors, and more
particularly to sensors integrated in an integrated circuit
structure and methods for producing the sensors. In one embodiment,
a sensor device can be integrated in an integrated circuit, such as
an application-specific integrated circuit (ASIC), structure by
encapsulation in a stack with an etchable sacrificial layer. In one
embodiment the sacrificial layer is dry-etchable. In some
embodiments, a sensor device can be integrated in a particular
structure of the ASIC with another function, such as in a shallow
trench isolation (STI) or other feature of the ASIC. Still other
integration locations and methodologies can be used in other
embodiments. The sensor device can comprise at least one of an
acceleration sensor, a pressure sensor, and/or some other suitable
sensor.
[0027] An integrated circuit is a set of electronic circuits and/or
electronic circuit elements formed or arranged on a single chip of
semiconductor material, such as comprising silicon. Integrated
circuits can be very small in size yet comprise a multitude of
circuits and circuit elements. Some integrated circuits are
application-specific integrated circuits (ASICs), which are
customized for a particular use or purpose. ASICs can comprise
specialized circuits, circuit elements and programming features.
Integrated circuits generally and ASICs in particular can comprise
or be arranged in packages, generally referred to as integrated
circuit packages. Integrated circuit packages can comprise a
housing or structure to enclose and protect the circuitry, and
leads or other elements (e.g., solder bumps, wires, etc.) to
communicate signals to and from the integrated circuit in the
package. Integrated circuit packages can be customized for the
contents, such as an optical sensor integrated circuit package that
comprises an aperture to enable light to reach a photosensitive
portion of the sensor within the package.
[0028] Referring to FIG. 1, an integrated sensor device 100 is
depicted. Sensor device 100 comprises a substrate 102, which can
comprise silicon, silicon composites, or other materials in
embodiments. In the examples discussed herein, substrate 102
generally comprises silicon unless otherwise mentioned, though
these examples are not limiting with respect to other or all
possible embodiments limited only by the scope of the claims.
[0029] The portion of substrate 102 depicted in the drawings can be
part of a larger silicon wafer or can be singulated therefrom. In
embodiments, substrate 102 can extend in any direction beyond the
particular portion depicted in the drawings to comprise or be
coupled with other structures formed in or on substrate 102. While
substrate 102 is shown as part of an arrangement or "stack" of
layers, layers other than those specifically depicted and discussed
can be included in the stack in other embodiments, either above,
below or within those depicted.
[0030] Sensor device 100 further comprises at least one sealing
and/or encapsulation layer 104, a cavity 106 formed in substrate
102 and sealed or closed by layer 104, and a moveable element 108
encapsulated or otherwise disposed in cavity 106. Layer 104 can
comprise a sealing layer, a metal layer, and/or other layer(s) of
sensor device 100 formed on or over substrate 102, though in some
embodiments layer 104 comprises a functional layer of device 100.
For example, layer 104 can be conductive such that it can be used
for read-out or other communication of signals related to movable
element 108, or have some other function within sensor device 100
and/or a device of which sensor device 100 forms a part or is
integrated with or in. Sealing or encapsulation per se need not be
the primary or main function of layer 104, though it is referred to
as such layer herein for ease of explanation. For example, layer
104 can comprise a first oxide or other sealing layer and a metal
or other layer(s) thereover (refer, e.g., to FIGS. 8 and 9), which
itself (or components thereof) forms other devices or features of
an integrated circuit or a stack in combination with substrate 102,
sensor device 100 or other components thereof, or still other
devices or components not depicted. In other words, versatility can
be an advantage of embodiments, in which the structures and
principles discussed herein can be applied in many different
devices and structures.
[0031] Cavity 106 is formed in substrate 102 and defined in part by
layer 104. In embodiments, cavity 106 can be formed specifically to
accommodate moveable element 108. In other embodiments, cavity 106
can have other functions while still accommodating moveable element
108. For example, in one embodiment cavity 106 comprises a shallow
trench isolation (STI) structure. STI can be incorporated in
integrated circuit devices to provide isolation between adjacent
circuit elements or structures, preventing current leakage and
other adverse effects. STI is often used in CMOS (complementary
metal-oxide-semiconductor) technologies, and incorporation of the
lamella in a CMOS STI structure can further streamline processing
and provide sensor integration opportunities not other otherwise
available without significantly altering (and thereby making more
complex and expensive) ordinary CMOS techniques. In other
embodiments, cavity 106 can comprise some other trench or
structure, whether formed solely to accommodate moveable element
108 or for some other additional purpose or function. Examples of
methodologies for forming cavity 106 are discussed herein
below.
[0032] Moveable element 108 can comprise a lamella, a diaphragm or
some other similar structure that moves or flexes upwardly (FIG. 2)
and/or downwardly (FIG. 3) when acted on by a physical
characteristic such as pressure or acceleration. The movement or
flexure of moveable element 108 can be sensed capacitively,
piezoelectrically, piezoresistively, electromagnetically, optically
or via some other technology in various embodiments. Moveable
element 108 can comprise silicon, polysilicon or some other
suitable material or composite of materials in embodiments.
[0033] In embodiments, moveable element 108 is generally square,
with lateral dimensions of about 5 .mu.m to about 200 .mu.m, such
as about 5 .mu.m to about 20 .mu.m (e.g., the width of moveable
element 108 is about 10 .mu.m and the length--the dimension into
the drawing page--is about 10 .mu.m in one example embodiment), and
a thickness of less than about 500 nm, such as about 100 nm to
about 500 nm, or about 250 nm to about 350 nm, such as about 300 nm
in one embodiment. A size-related characteristic of moveable
element 108 is the ratio of the maximum deflection to the average
deflection in operation. In general, and for reasons relating to
linearity and the production of sensor device 100 (i.e., the
formation of cavity 106), the maximum deflection should not exceed
about 10 percent of the height of cavity 106, which can lead to a
larger and thicker moveable element 108 that is undesirable because
of size limitations and cost constraints. The average deflection,
on the other hand, is related to the sensor signal (e.g.,
capacitive). A configuration in which the ratio of maximum
deflection to average deflection is as small as possible therefore
can be advantageous.
[0034] Moveable element 108 comprises or is coupled to a plurality
of support elements 110, such as at least two support elements 110
in embodiments. In one embodiment depicted in FIG. 4, moveable
element 108 is substantially square, with a support element 110
located at each corner of the square. In other embodiments, the
support elements 110 can be located along the sides rather than at
the corners, as in FIG. 5. In another embodiment, a single support
element 110 is used along part or all of a single side of moveable
element 108. In still other embodiments, support elements 110 can
be located at the corners and sides as depicted in FIG. 6, or at
only some corners or sides, symmetrically or asymmetrically. For
example, in one embodiment two support elements 110 are located at
diagonally opposing corners as depicted in FIG. 7, which can enable
moveable element 110 to tilt instead of or in addition to flexing
up and down. While support elements 110 are depicted as being the
same size and shape in embodiments, support elements can be
differently sized or shaped in various embodiments and/or with
respect to one another in any particular embodiment. For example,
in one embodiment support elements 110 can comprise spring-like
structures, among others. Additionally, while moveable element is
depicted as being substantially square, it can have virtually any
shape (e.g., round, rectangular, oblong, triangular or some other
multi-sided shape), and the arrangement, size and configuration of
support elements 110 can be selected in accordance with the
arrangement, size and configuration of the moveable element they
support. For example, in one embodiment each support element 110 is
generally square-shaped and has a lateral dimension of less than
about 3,000 nm, such as lateral dimensions of about 500 nm by 500
nm and a height of about 20 nm to about 400 nm, though support
elements 110 can be larger or smaller and/or have some other shape
(e.g., round, triangular, oval, rectangular, hexagonal, some other
single- or multi-sided shape, etc.) in other embodiments. For
example, in one embodiment moveable element 108 is triangularly
shaped and comprises three support elements 110. A sub-cavity 107
separates and is defined by substrate 102 and moveable element 108.
The height of support elements 110 defines the height of sub-cavity
107 (i.e., the distance between a bottom surface of moveable
element 108 and a top surface of substrate 102), and the height can
be in a range of about 20 nm to about 200 nm in some
embodiments.
[0035] As understood by those skilled in the art, the particular
dimensions of moveable element 110 and the dimensions and
arrangement of support elements 110 can be varied to adjust or
modulate the deflection of moveable element 110. Thereby, the
various geometries of sensor device 100 can be chosen to enable
sensor device 100 to function as one of many different types of
sensor devices, such as an acceleration sensor with moveable
element 110 comprising a mass element. In simulations, even
accelerations of less than about 0.1 G can be sensed capacitively
by sensor device 100. For example, in an embodiment in which sensor
device 100 comprises an acceleration sensor, the following
simulations were obtained:
[0036] Sensor Device A [0037] Moveable element lateral dimension:
100 .mu.m [0038] Moveable element thickness: 300 nm [0039] Support
element width: 1 .mu.m [0040] Support element length: 10 .mu.m
[0041] Acceleration: 30 G [0042] Flexure (max): 1.90 nm
[0043] Sensor Device B [0044] Moveable element lateral dimension:
100 .mu.m [0045] Moveable element thickness: 300 nm [0046] Support
element width: 1 .mu.m [0047] Support element length: 5 .mu.m
[0048] Acceleration: 30 G [0049] Flexure (max): 1.44 nm
[0050] Sensor Device C [0051] Moveable element lateral dimension:
100 .mu.m [0052] Moveable element thickness: 300 nm [0053] Support
element width: 5 .mu.m [0054] Support element length: 1.mu.m [0055]
Acceleration: 30 G [0056] Flexure (max): 1.05 nm
[0057] In embodiments, sensor device 100 can comprise additional
components and features. For example, sensor device 100 can
comprise at least one electrode or other structure on one or both
of a bottom or top surface of cavity 106 (wherein the top surface
of cavity 106 generally refers to an underside surface of layer
104) or within layer 104 or substrate 102. Such an electrode can be
used in embodiments in which moveable element 108 forms part of a
capacitive sensor, with a voltage between the electrode and
moveable element 108 being measured to sense flexure of moveable
element 108 in an up or down direction (with respect to the
orientation of the drawings on the page) in operation, where that
flexure changes a capacitance between moveable element 108 and the
electrode. As previously mentioned, in embodiments layer 104 can be
conductive or comprise at least one conductive portion such that it
can be used for read-out or other communication of signals related
to movable element 108. As such, sensor device 100 could provide a
differential output signal, such as in an embodiment in which
sensor device 100 is used in a force-feedback mode. In a
force-feedback mode, a DC bias can be used to compensate
acceleration forces such that moveable element 108 does not move.
Embodiments of sensor device 100 can be advantageous for this type
of operation since sensor device 100, or at least moveable element
108 thereof, can be much lighter (e.g., have less mass) than
conventional seismic masses.
[0058] Sensor device 100 also can comprise additional isolation
structures or layers, and/or highly-doped regions such as region
112. In one embodiment, region 112 can be used for capacitive
read-out of signals from moveable element 108, such as in
conjunction with layer 104, or other functions. Additionally,
sensor device 100 can comprise or be coupled with circuitry to,
e.g., receive signals from moveable element 108 and/or electrodes
or other components associated therewith, provide voltage or
current thereto, and carry out various other functions related to
the operation of sensor device 100.
[0059] In operation, an estimation of a sensor signal of sensor
device 100 can be as follows:
p acc = .delta. Si da = 0.023 d [ .mu. m ] a [ g ] ##EQU00001##
[0060] In this case, the flexure of moveable element 108 caused by
an acceleration acting thereon can be equated with a pressure
p.sub.acc that causes an identical flexure. .delta..sub.Si i the
specific mass of silicon (or another material of lamella 108 in
other embodiments), d is the thickness of moveable element 108, and
a is the acceleration. Thus, a conventional diaphragm fixed on all
sides having a thickness of 300 nm and an edge length or lateral
dimension of 10 .mu.m would have a maximum deflection of 3.5 nm at
one bar, and a deflection of approximately 2.6e-16 m at 10
m/s.sup.2. This value, however, is so small as to be barely
measurable. In an embodiment of sensor device 100, with a moveable
element 108 and support elements 110 as discussed herein, the value
increases to 2.6e-12 m or 0.026 .ANG.. Although this value is only
1/20 of the Bohr radius, it is in the resolution range of good
sensors, and a significant improvement with respect to conventional
devices.
[0061] Some applications of sensor device 100 can be automotive,
such as in a side airbag sensor or tire pressure monitoring system
(TPMS). For example, a passenger vehicle tire has an acceleration
of approximately 30 G at the tire air valve at 30 km/h
(a=v.sup.2/r; r.apprxeq.0.3 m), which brings about a maximum
deflection of approximately 0.7 .ANG. for a moveable element 108
with a lateral dimension of 100 .mu.m. If the dimensioning of the
suspension by support elements 110 is very narrow, the deflection
of lamella 108 increases accordingly.
[0062] An advantage of embodiments, as previously mentioned, is
easier integration in existing manufacturing processes, such as
CMOS. Referring to FIGS. 8 and 9, at 902 (FIG. 8A) a substrate 802
is provided. Substrate 802 can comprise silicon, a composite
thereof, or some other suitable material as discussed herein above.
In one embodiment, substrate 802 comprises a silicon wafer. At 904
(FIG. 8B), a well or trench 805 is formed in substrate 802, such as
by using a patterning photolithography process. Optionally, an
isolation structure 812 is also formed in substrate 802. At 906
(FIG. 8C), a first sacrificial layer 814, moveable element 806 and
support elements 810, and a second sacrificial layer 816 are formed
in trench 805. At 908 (FIG. 8D), a sealing layer 804a is deposited.
In embodiments, sealing layer 804a can comprise oxide, nitride,
polysilicon, or some other suitable material or composition of
these materials and/or others. Apertures can be formed in sealing
layer 804a as or after it is deposited, such that, at 910 (FIG. 8E)
first and second sacrificial layers 814 and 816 are removed via the
apertures, such as by a dry-etch process or other process suitable
according to the material composition of sacrificial layers 814 and
816 (e.g., carbon). In one embodiment, both sacrificial layers 814
and 816 can be dry-etchable, while in other embodiments only one
layer 814 or 816 (e.g., sacrificial layer 814) is dry-etchable.
This releases moveable element 808 within cavity 806. The use of a
dry-etchable sacrificial layer enables thinner moveable elements
808 to be formed without the moveable element 808 being damaged or
sticking to other surfaces, such as the bottom surface of trench
805 (cavity 806). In embodiments, moveable element 808 is released
at the sides or the corners by apertures to remove sacrificial
layer 814 underneath. In this way, the lithography process for
patterning moveable element 808 also can be used for aperture
formation. Additionally, the apertures can be closed without
needing to retain the open portion of trench 805 below the
apertures, which are instead located at the sides or corners.
Moveable element 806 now can flex and move within cavity 806. Thus,
at 912 (FIG. 8F), the apertures can be closed, and additional
encapsulation or layer(s) 804b can be formed on substrate 802
(e.g., over sealing layer 804a or a portion thereof). In an
embodiment, the apertures can be closed by depositing a
non-conformal or other layer, such as a non-conformal layer
comprising HDP oxide or another suitable material or composition of
materials. Layer 804b can comprise metallization and/or other
layers, such as those commonly formed in backend processing.
Additional processes and structures can be formed after, before or
intermediate to any of those discussed herein in various
embodiments.
[0063] For example, referring to FIG. 10, in embodiments a sensor
device 1000 can comprise a plurality of integrated sensor devices,
such as an acceleration sensor device 1100 integrated with a
pressure sensor device 1200 formed in the same substrate 1002. The
methods discussed herein enable easier integration of multiple
sensor devices in a single, overarching device in which the sensor
devices operate together. In still other embodiments, a single
cavity (e.g., cavity 106 in FIG. 1) can contain a plurality or
array of lamellas 108. Still other integration options can be
implemented in other embodiments, given the improved
manufacturability and other features of embodiments.
[0064] Various embodiments of systems, devices and methods have
been described herein. These embodiments are given only by way of
example and are not intended to limit the scope of the invention.
It should be appreciated, moreover, that the various features of
the embodiments that have been described may be combined in various
ways to produce numerous additional embodiments. Moreover, while
various materials, dimensions, shapes, configurations and
locations, etc. have been described for use with disclosed
embodiments, others besides those disclosed may be utilized without
exceeding the scope of the invention.
[0065] Persons of ordinary skill in the relevant arts will
recognize that the invention may comprise fewer features than
illustrated in any individual embodiment described above. The
embodiments described herein are not meant to be an exhaustive
presentation of the ways in which the various features of the
invention may be combined. Accordingly, the embodiments are not
mutually exclusive combinations of features; rather, the invention
can comprise a combination of different individual features
selected from different individual embodiments, as understood by
persons of ordinary skill in the art. Moreover, elements described
with respect to one embodiment can be implemented in other
embodiments even when not described in such embodiments unless
otherwise noted. Although a dependent claim may refer in the claims
to a specific combination with one or more other claims, other
embodiments can also include a combination of the dependent claim
with the subject matter of each other dependent claim or a
combination of one or more features with other dependent or
independent claims. Such combinations are proposed herein unless it
is stated that a specific combination is not intended. Furthermore,
it is intended also to include features of a claim in any other
independent claim even if this claim is not directly made dependent
to the independent claim.
[0066] Any incorporation by reference of documents above is limited
such that no subject matter is incorporated that is contrary to the
explicit disclosure herein. Any incorporation by reference of
documents above is further limited such that no claims included in
the documents are incorporated by reference herein. Any
incorporation by reference of documents above is yet further
limited such that any definitions provided in the documents are not
incorporated by reference herein unless expressly included
herein.
[0067] For purposes of interpreting the claims for the present
invention, it is expressly intended that the provisions of Section
112, sixth paragraph of 35 U.S.C. are not to be invoked unless the
specific terms "means for" or "step for" are recited in a
claim.
* * * * *