U.S. patent application number 14/566761 was filed with the patent office on 2016-06-16 for wafer material removal.
The applicant listed for this patent is NXP B.V.. Invention is credited to Guido Albermann, Hartmut Buenning, Martin Lapke, Sascha Moeller, Thomas Rohleder.
Application Number | 20160172243 14/566761 |
Document ID | / |
Family ID | 54608299 |
Filed Date | 2016-06-16 |
United States Patent
Application |
20160172243 |
Kind Code |
A1 |
Moeller; Sascha ; et
al. |
June 16, 2016 |
WAFER MATERIAL REMOVAL
Abstract
One example discloses a system for wafer material removal,
including: a wafer structures map, identifying a first device
structure having a first location and a second device structure
having a second location; a material removal controller, coupled to
the structures map, and having a material removal beam power level
output signal and a material removal beam on/off status output
signal; wherein the material removal controller is configured to
select a first material removal beam power level and a first
material removal beam on/off status corresponding to the first
location; and wherein the material removal controller is configured
to select a second material removal beam power level and a second
material removal beam on/off status corresponding to the second
location. Another example discloses an article of manufacture
comprises at least one non-transitory, tangible machine readable
storage medium containing executable machine instructions for wafer
material removal.
Inventors: |
Moeller; Sascha; (Hamburg,
DE) ; Rohleder; Thomas; (Hamburg, DE) ;
Albermann; Guido; (Hamburg, DE) ; Lapke; Martin;
(Hamburg, DE) ; Buenning; Hartmut; (Norderstedt,
DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
NXP B.V. |
Eindhoven |
|
NL |
|
|
Family ID: |
54608299 |
Appl. No.: |
14/566761 |
Filed: |
December 11, 2014 |
Current U.S.
Class: |
438/462 ;
204/192.33; 204/192.34; 219/121.39; 219/121.62; 250/492.2;
425/174.4; 451/2 |
Current CPC
Class: |
H01L 21/67092 20130101;
B23K 26/364 20151001; B23K 26/14 20130101; B23K 26/402 20130101;
B23K 26/0626 20130101; H01J 37/305 20130101; H01L 21/2633 20130101;
B24C 1/045 20130101; H01L 21/268 20130101; H01L 21/3065 20130101;
B23K 2103/56 20180801; H01L 21/78 20130101; B23K 10/006 20130101;
H01J 37/31 20130101; H01J 37/3023 20130101 |
International
Class: |
H01L 21/78 20060101
H01L021/78; B23K 26/364 20060101 B23K026/364; B23K 26/402 20060101
B23K026/402; B23K 10/00 20060101 B23K010/00; B24C 1/04 20060101
B24C001/04; H01L 21/3065 20060101 H01L021/3065; H01J 37/31 20060101
H01J037/31; H01J 37/305 20060101 H01J037/305; H01J 37/302 20060101
H01J037/302; H01L 21/263 20060101 H01L021/263; H01L 21/268 20060101
H01L021/268; B23K 26/06 20060101 B23K026/06; B23K 26/14 20060101
B23K026/14 |
Claims
1. A system for wafer material removal, comprises: a wafer
structures map, identifying a first device structure having a first
location and a second device structure having a second location; a
material removal controller, coupled to the structures map, and
having a material removal beam power level output signal and a
material removal beam on/off status output signal; wherein the
material removal controller is configured to select a first
material removal beam power level and a first material removal beam
on/off status corresponding to the first location; and wherein the
material removal controller is configured to select a second
material removal beam power level and a second material removal
beam on/off status corresponding to the second location.
2. The system of claim 1: wherein the system is at least one of: a
system for wafer grooving or a system for wafer cutting.
3. The system of claim 1: wherein the wafer structures map
identifies the device structures and locations based on information
from at least one of: a set of wafer reticles or a scan of a wafer
surface.
4. The system of claim 1, wherein the wafer structures map
associates with the first device structure: a device structure
attribute; a device structure start location; and a device
structure stop location.
5. The system of claim 4: wherein the device structure attribute is
at least one of: a device structure thickness, device structure
density, a device structure material, a device structure depth or a
number of device structure layers.
6. The system of claim 1: wherein the first device structure is at
least one of: a sawlane, a sawlane intersection, a process control
device, a low-k dielectric material, a metal structure, a
multi-layer structure, an integrated circuit, an oxide layer or a
polymer layer.
7. The system of claim 1: further comprising a wafer material
removal map, identifying a previous material removal location
corresponding to a portion of the first location; wherein the
material removal controller is configured to select a third
material removal beam power level and a third material removal beam
on/off status corresponding to the previous material removal
location; and wherein the third material removal beam power level
is less than the first material removal beam power level.
8. The system of claim 7: wherein the previous material removal
location corresponding to the portion of the first location is a
sawlane intersection.
9. The system of claim 7: wherein the material removal controller
is configured to select the third material removal beam power level
and the third material removal beam on/off status corresponding to
a device structure depth at the previous material removal
location.
10. The system of claim 1: further comprising a material removal
device configured to generate a material removal beam; wherein the
material removal device includes a material removal beam power
level modulator coupled to receive the material removal beam power
level output signal and in response varying the material removal
beam power level; and wherein the material removal device includes
a material removal beam on/off status modulator coupled to receive
the material removal beam on/off status output signal and in
response turn the material removal beam on or off
11. The system of claim 10: wherein the material removal device is
at least one of: a cutting device or a grooving device.
12. The system of claim 10: wherein the material removal beam is at
least one of: a laser beam, an ion beam, a plasma beam, a water
beam, general particle beams, or a combination of two or more
beams.
13. An article of manufacture comprises at least one
non-transitory, tangible machine readable storage medium containing
executable machine instructions for wafer material removal: wherein
the instructions include: identifying a first device structure on a
wafer having a first location and a second device structure on the
wafer having a second location; selecting a first material removal
beam power level and a first material removal beam on/off status
corresponding to the first location; and selecting a second
material removal beam power level and a second material removal
beam on/off status corresponding to the second location.
14. The article of claim 13, wherein the instructions further
comprise: identifying a previous material removal location
corresponding to a portion of the first location; and selecting a
third material removal beam power level and a third material
removal beam on/off status corresponding to the previous material
removal location; wherein the third material removal beam power
level is less than the first material removal beam power level.
15. The article of claim 13, wherein the instructions further
comprise: generating a material removal beam; varying the material
removal beam power in response to the material removal beam power
level selection; and turning the material removal beam on or off in
response to the material removal beam on/off status selection.
16. The article of claim 15, wherein the instructions further
comprise: cutting a wafer with the material removal beam.
17. The article of claim 15, wherein the instructions further
comprise: grooving a wafer with the material removal beam; and
dicing the wafer a cutting blade.
18. The article of claim 15, wherein the instructions further
comprise: cutting with the material removal beam at least one of: a
sawlane, a sawlane intersection, a process control device, a low-k
dielectric material, a metal structure, a multi-layer structure, an
integrated circuit, an oxide layer or a polymer layer.
Description
[0001] Various example embodiments of systems, methods,
apparatuses, devices, articles of manufacture and computer readable
mediums for wafer material removal are now discussed.
[0002] Mechanical sawing (e.g. blade dicing) of certain wafer
materials, such as Silicon, can be an effective way for separating
devices on the wafer. However mechanical sawing of other materials,
such as relatively fragile low-k materials, can cause collateral
damage to wafer devices and structures, thereby affecting wafer
yield. Such damage may be even greater for ultra-low-k dielectric
materials.
[0003] Fabricated wafers may also include a variety of structures
that need to be cut through during chip dicing. For example, the
empty portions of sawlanes may be interspersed with sawlanes filled
up with process control modules (PCMs) or metal tiling structures.
PCMs are fabricated so as to monitor technology specific parameters
such as V.sub.th in CMOS and V.sub.be in Bipolars. These structures
can be placed across the wafer at specific locations along with the
chip produced so that a closer look into the process variation is
possible.
[0004] In another example, complete integrated circuit structures
in a multi-project wafer (MPW) need to be cut through. Such MPWs
require single cuts through both empty sawlanes and full high metal
density device structures.
[0005] Mechanically sawed (e.g. metals) may also clog the sawing
blade and thus require more frequent blade cleaning and/or
replacement.
SUMMARY
[0006] According to an example embodiment, a system for wafer
material removal, comprises: a wafer structures map, identifying a
first device structure having a first location and a second device
structure having a second location; a material removal controller,
coupled to the structures map, and having a material removal beam
power level output signal and a material removal beam on/off status
output signal; wherein the material removal controller is
configured to select a first material removal beam power level and
a first material removal beam on/off status corresponding to the
first location; and wherein the material removal controller is
configured to select a second material removal beam power level and
a second material removal beam on/off status corresponding to the
second location.
[0007] In another example embodiment, the system is at least one
of: a system for wafer grooving or a system for wafer cutting.
[0008] In another example embodiment, the wafer structures map
identifies the device structures and locations based on information
from at least one of: a set of wafer reticles or a scan of a wafer
surface.
[0009] In another example embodiment, the wafer structures map
associates with the first device structure: a device structure
attribute; a device structure start location; and a device
structure stop location.
[0010] In another example embodiment, the device structure
attribute is at least one of: a device structure thickness, device
structure density, a device structure material, a device structure
depth or a number of device structure layers.
[0011] In another example embodiment, the first device structure is
at least one of: a sawlane, a sawlane intersection, a process
control device, a low-k dielectric material, a metal structure, a
multi-layer structure, an integrated circuit, an oxide layer or a
polymer layer.
[0012] Another example embodiment, further comprises a wafer
material removal map, identifying a previous material removal
location corresponding to a portion of the first location; wherein
the material removal controller is configured to select a third
material removal beam power level and a third material removal beam
on/off status corresponding to the previous material removal
location; and wherein the third material removal beam power level
is less than the first material removal beam power level.
[0013] In another example embodiment, the previous material removal
location corresponding to the portion of the first location is a
sawlane intersection.
[0014] In another example embodiment, the material removal
controller is configured to select the third material removal beam
power level and the third material removal beam on/off status
corresponding to a device structure depth at the previous material
removal location.
[0015] Another example embodiment, further comprises a material
removal device configured to generate a material removal beam;
wherein the material removal device includes a material removal
beam power level modulator coupled to receive the material removal
beam power level output signal and in response varying the material
removal beam power level; and wherein the material removal device
includes a material removal beam on/off status modulator coupled to
receive the material removal beam on/off status output signal and
in response turn the material removal beam on or off.
[0016] In another example embodiment, the material removal device
is at least one of: a cutting device or a grooving device.
[0017] In another example embodiment, the material removal beam is
at least one of: a laser beam, an ion beam, a plasma beam, a water
beam, general particle beams, or a combination of two or more
beams.
[0018] An example article of manufacture comprises at least one
non-transitory, tangible machine readable storage medium containing
executable machine instructions for wafer material removal: wherein
the instructions include: identifying a first device structure on a
wafer having a first location and a second device structure on the
wafer having a second location; selecting a first material removal
beam power level and a first material removal beam on/off status
corresponding to the first location; and selecting a second
material removal beam power level and a second material removal
beam on/off status corresponding to the second location.
[0019] In another example embodiment, the instructions further
comprise: identifying a previous material removal location
corresponding to a portion of the first location; and selecting a
third material removal beam power level and a third material
removal beam on/off status corresponding to the previous material
removal location; wherein the third material removal beam power
level is less than the first material removal beam power level.
[0020] In another example embodiment, the instructions further
comprise: generating a material removal beam; varying the material
removal beam power in response to the material removal beam power
level selection; and turning the material removal beam on or off in
response to the material removal beam on/off status selection.
[0021] In another example embodiment, the instructions further
comprise: cutting a wafer with the material removal beam.
[0022] In another example embodiment, the instructions further
comprise: grooving a wafer with the material removal beam; and
dicing the wafer a cutting blade.
[0023] In another example embodiment, the instructions further
comprise: cutting with the material removal beam at least one of: a
sawlane, a sawlane intersection, a process control device, a low-k
dielectric material, a metal structure, a multi-layer structure, an
integrated circuit, an oxide layer or a polymer layer.
[0024] The above discussion is not intended to represent every
example embodiment or every implementation within the scope of the
current or future Claim sets. The Figures and Detailed Description
that follow also exemplify various example embodiments.
[0025] Various example embodiments may be more completely
understood in consideration of the following Detailed Description
in connection with the accompanying Drawings, in which:
BRIEF DESCRIPTION OF THE DRAWINGS
[0026] FIGS. 1A, 1B and 1C show an example laser grooving-dicing
process.
[0027] FIG. 2 is an example wafer material removal system.
[0028] FIGS. 3A, 3B, 3C, and 3D show an example of a multi-project
wafer diced with and without the material removal system.
[0029] FIGS. 4A and 4b show examples of intersecting sawlanes
created with and without the material removal system.
[0030] FIGS. 5A, 5B, and 5C an example wafer layout including a
heterogeneous set of device structures in the sawlanes and an
example application of the material removal system for dicing the
example wafer.
[0031] FIG. 6 is an example set of instructions for enabling a
wafer material removal system.
[0032] FIG. 7 is an example system for hosting instructions for
enabling a wafer material removal system.
[0033] While the disclosure is amenable to various modifications
and alternative forms, specifics thereof have been shown by way of
example in the drawings and will be described in detail. It should
be understood, however, that other embodiments, beyond the
particular embodiments described, are possible as well. All
modifications, equivalents, and alternative embodiments falling
within the spirit and scope of the appended claims are covered as
well.
DETAILED DESCRIPTION
[0034] Laser grooving before mechanical sawing can remove some
low-k, metal and circuit structures, but often results in a
variable groove depth since the metal and other device structures
have varying thicknesses and densities. Such inconsistent laser
grooving leave trace amounts of materials that also can cause
collateral damage and/or clog the dicing blade.
[0035] FIGS. 1A, 1B and 1C show an example 100 laser
grooving-dicing process. In FIG. 1A, structures 102, 104, 106, 108
are fabricated upon a silicon wafer 110. A sawlane 112 is defined
between two of the structures 102 and 104.
[0036] To begin the dicing process, a laser 114 is applied at the
sawlane 112 to the structures 106, 108. The structures 106, 108 are
then removed thereby creating a groove 116. A dicing blade 118 is
applied at the groove 116 to complete the cut through the wafer
110.
[0037] If the sawlane 112 only contains structures 106, 108 the
groove 116 depth will be rather uniform. However, with variable
structures in the sawlane (e.g. PCMs, metal tiling, integrated
circuits or empty sawlanes) the groove 116 depth will be variable
as well unless either a multiple laser cuts are performed over
structures in the sawlane that were not fully cut during the first
laser pass, or unless the power of the laser was varied during the
first laser material removal (e.g. cutting, grooving, ablating,
abrading, wearing away) pass such that a uniform depth was
created.
[0038] FIG. 2 is an example wafer material removal system 200. The
material removal system 200 includes a material removal device 202
for generating a material removal beam 204 which removes material
from various wafer 218 structures, resulting in either a grooved or
cut wafer. The material removal beam 204 in various embodiments can
be: a laser beam, an ion beam, a plasma beam, a water beam, general
particle beams, or a combination of two or more beams (e.g. a water
guided laser beam).
[0039] The material removal device 202 controls the material
removal beam 204 using a material removal beam power level
modulator 206 and a material removal beam on/off status modulator
208.
[0040] The material removal beam power level modulator 206 receives
a material removal beam power level input signal and in response
varies the power level of the material removal beam 204. Such power
variation can be either in digital steps or analog in nature. In
one example embodiment, the power level is varied while the
material removal beam 204 is on, however, in another embodiment the
power level can be stored in a data register and is preset to a new
power level while the material removal beam 204 is off.
[0041] The material removal beam on/off status modulator 208
receives a material removal beam on/off status input signal and in
response turn the material removal beam on or off. In one example
embodiment, the off state is a quiescent or standby state that does
not cause material removal to the wafer 218 structures.
[0042] The wafer material removal system 200 includes a material
removal controller 210, which is coupled to the material removal
device 202. The material removal controller 210 outputs the
material removal beam power level signal and the material removal
beam on/off status signal to the material removal device 202 for
controlling the material removal beam 204.
[0043] In one example, the material removal controller 210 set the
material removal beam 204 power level and on/off status by
retrieving a set of wafer device structure attributes from a memory
212. The memory 212 includes a wafer structures map 214 and a wafer
material removal map 216.
[0044] In one example embodiment, the wafer structures map 214
includes information on a set of wafer 218 device structures and
their location on the wafer 218. This information can be obtained
from a set of reticles for fabricating the wafer 218, or a scan of
the wafer's 218 surface. The wafer structures map 214 stores a set
of attributes for the device structures which in one example
include: device structure type, a device structure start location,
a device structure stop location and other device structure
attributes.
[0045] Examples of device structure types include: a sawlane, a
sawlane intersection, a process control device, a low-k dielectric
material, a metal structure, a multi-layer structure, an integrated
circuit, an oxide layer or a polymer layer. Examples of other
device structure attributes include: a device structure thickness,
device structure density, a device structure material, a device
structure depth or a number of device structure layers.
[0046] In an example embodiment, the wafer material removal map 216
includes information on a set of wafer 218 device structures which
had material previously removed from and the location of the
previous material removal. In some examples if a device structure
has had material previously removed, the material removal
controller 210 will select a lower material removal beam power
level or a different material removal beam on/off status for the
previously (wholly or partially) removed structure than was
selected by the material removal controller 210 when material was
removed from the previously structure.
[0047] Thus during material removal of a particular data structure
on the wafer 218, the material removal controller 210 selects a
material removal beam power level and a material removal beam
on/off status corresponding to the particular data structure's
attributes and whether all or only part of the device structure had
been previously removed.
[0048] For example, as the material removal beam 204 cuts only a
low-k dielectric in a sawlane, the material removal controller 210
selects a low material removal beam power level. However, as the
material removal beam 204 cuts a multi-metal layered integrated
circuit, the material removal controller 210 selects a high
material removal beam power level.
[0049] Or for example, as the material removal beam 204 reaches a
sawlane intersection which has already been cut once by the
material removal beam 204, the material removal controller 210 sets
the material removal beam status to off. Then as the material
removal beam 204 reaches the other side of the sawlane
intersection, the material removal controller 210 sets the material
removal beam status to on.
[0050] Thus in one example embodiment the material removal
controller 210 ensures that each sawlane gets just the amount of
power necessary to cut the empty sawlanes and remove variable
thickness and density sawlane structures. This creates a uniform
groove depth along the whole sawlane.
[0051] In various embodiments using the material removal system
200, the material removal beam 204 only needs to pass over various
wafer 218 structures once. This is because the wafer structures map
214 and the wafer material removal map 216 in the memory 212 enable
the material removal controller 210 to predict the right material
removal beam 204 power level and timing to achieve a consistent
groove or cut depth which can then be followed by blade dicing if
necessary.
[0052] FIGS. 3A-3D show an example 300 of a multi-project wafer 302
diced with and without the material removal system 200. FIG. 3A
shows the multi-project wafer 302 which includes a set of circuit
device structures A, B, C, D, E, F, G, H, J, K, delineated by
boundary device structures 304 (e.g. sawlanes). In this example 300
the device structures A and F can be sacrificed to dice one or more
of the other device structures.
[0053] FIG. 3B shows the material removal beam 204 reaching a first
depth in the wafer 218 over an empty sawlane which, in one example,
is at the boundary device structure 304 immediately beneath device
structures B and C, but not including a device A material removal
lane 306, or alternatively immediately above device structures J
and K, but not including a device F material removal lane 308. The
material removal controller 210 has set the material removal beam
204 to a first material removal beam power level to reach this
first depth.
[0054] FIG. 3C shows the material removal beam 204 reaching a
second depth over device structure A or F when the material removal
beam 204 is set to the first material removal beam power level. As
shown in FIG. 3C the second depth is shallower than the first depth
shown in FIG. 3B and does not cut the whole way through device
structures A or F.
[0055] FIG. 3D shows the material removal beam 204 reaching the
first depth over device structure A or F if the material removal
beam's 204 power level was instead increased to a second material
removal beam power level at a start 310 point and until a stop 312
point. As shown in FIG. 3D the material removal beam 204 has cut
the whole way through device structures A or F.
[0056] Thus if the material removal beam 204 power is not increased
at the start 310 point, the high metal density or other structural
differences in devices A and F results in a shallower grooving
depth. However by increasing the material removal beam 204 power
level over devices A and F, results in an equivalent grooving depth
to that of the empty sawlane shown in FIG. 3B.
[0057] FIGS. 4A-4B show examples 400 of intersecting dicing
channels created with and without the material removal system 200.
FIG. 4A shows a first dicing channel 402, a second dicing channel
404 and a first dicing channel intersection 406. When the material
removal beam 204 cuts both the first and second dicing channels
402, 404 with a same material removal beam power level, then the
first dicing channel intersection 406 is twice cut and thus twice
as deep. This leads to an uneven constant power level cross-section
414, as shown.
[0058] However, FIG. 4B shows the first dicing channel 402, the
second dicing channel 404 and a second dicing channel intersection
408. When the material removal beam 204 stops 410 cutting the
second dicing channel 404 right before the second dicing channel
intersection 408 and starts 412 cutting the second dicing channel
404 after the second dicing channel intersection 408, then the
second dicing channel intersection 408 is only cut once and thus
has a same depth as the first and second dicing channels 402, 404.
This leads to an even cross-section 416, as shown.
[0059] FIGS. 5A-5C show an example 500 wafer layout including a
heterogeneous set of device structures in the sawlanes and an
example application of the material removal system 200 for dicing
the example wafer.
[0060] FIG. 5A shows a wafer having a first type device structure
502, a second type device structure 504, a third type device
structure 506 and empty sawlane structures 508. In FIG. 5A more
than 50% of the vertical sawlanes are filled with device structures
such as process control modules (PCM's). These PCM can have varying
thicknesses and densities. If a constant power material removal
beam 204 is applied to these different device structures 502, 504,
506, 508, then the resulting sawlane will have different heights
due to these structural differences.
[0061] FIG. 5B shows an example set of variable power vertical
sawlane cuts 510 by the material removal system's 200 material
removal beam 204 so that only one material removal beam 204 cut per
vertical sawlane is required.
[0062] FIG. 5C shows those portions of the vertical sawlane cuts
510 which were set to a higher material removal beam cutting power
level 512 and correspond to the denser or thicker device structures
502, 504, 506.
[0063] FIG. 6 is an example set of instructions for enabling a
wafer material removal system. The order in which the instructions
are discussed does not limit the order in which other example
embodiments implement the instructions. Additionally, in some
embodiments the instructions are implemented concurrently.
[0064] A first example instruction set begins in 602, by
identifying a first device structure on a wafer having a first
location and a second device structure on the wafer having a second
location. Next, in 604, selecting a first material removal beam
power level and a first material removal beam on/off status
corresponding to the first location. Then in 606, selecting a
second material removal beam power level and a second material
removal beam on/off status corresponding to the second
location.
[0065] The instructions can be augmented with one or more of the
following sets of additional instructions, presented in no
particular order.
[0066] A first set of additional instructions include:
608--identifying a previous material removal location corresponding
to a portion of the first location; 610--selecting a third material
removal beam power level and a third material removal beam on/off
status corresponding to the previous material removal location; and
612--wherein the third material removal beam power level is less
than the first material removal beam power level.
[0067] A second set of additional instructions include:
614--generating a material removal beam; 616--varying the material
removal beam power in response to the material removal beam power
level selection; and 618--turning the material removal beam on or
off in response to the material removal beam on/off status
selection.
[0068] A third set of additional instructions include:
620--grooving a wafer with the material removal beam and
622--dicing the wafer a cutting blade.
[0069] FIG. 7 is another example system 700 for hosting
instructions for enabling a wafer material removal system. The
system 700 shows an input/output data 702 interface with an
electronic apparatus 704. The electronic apparatus 704 includes a
processor 706, a storage device 708, and a machine-readable storage
medium 710. The machine-readable storage medium 710 includes
instructions 712 which control how the processor 706 receives input
data 702 and transforms the input data into output data 702, using
data within the storage device 708. Example instructions 712 stored
in the machine-readable storage medium 710 are discussed elsewhere
in this specification. The machine-readable storage medium in an
alternate example embodiment is a computer-readable storage medium.
In one example, the instructions 712 stored in the machine-readable
storage medium 710 include those shown in FIG. 6.
[0070] The processor (such as a central processing unit, CPU,
microprocessor, application-specific integrated circuit (ASIC),
etc.) controls the overall operation of the storage device (such as
random access memory (RAM) for temporary data storage, read only
memory (ROM) for permanent data storage, firmware, flash memory,
external and internal hard-disk drives, and the like). The
processor device communicates with the storage device and
non-transient machine-readable storage medium using a bus and
performs operations and tasks that implement one or more
instructions stored in the machine-readable storage medium. The
machine-readable storage medium in an alternate example embodiment
is a computer-readable storage medium.
[0071] The instructions and/or flowchart steps in the above Figures
can be executed in any order, unless a specific order is explicitly
stated. Also, those skilled in the art will recognize that while
one example set of instructions/method has been discussed, the
material in this specification can be combined in a variety of ways
to yield other examples as well, and are to be understood within a
context provided by this detailed description.
[0072] In other examples, the set of instructions/methods
illustrated herein and data and instructions associated therewith
are stored in respective storage devices, which are implemented as
one or more non-transient machine or computer-readable or
computer-usable storage media or mediums. Such computer-readable or
computer-usable storage medium or media is (are) considered to be
part of an article (or article of manufacture). An article or
article of manufacture can refer to any manufactured single
component or multiple components. The non-transient machine or
computer-usable media or mediums as defined herein excludes
signals, but such media or mediums may be capable of receiving and
processing information from signals and/or other transient mediums.
The storage media include different forms of memory including
semiconductor memory devices such as DRAM, or SRAM, Erasable and
Programmable Read-Only Memories (EPROMs), Electrically Erasable and
Programmable Read-Only Memories (EEPROMs) and flash memories;
magnetic disks such as fixed, floppy and removable disks; other
magnetic media including tape; and optical media such as Compact
Disks (CDs) or Digital Versatile Disks (DVDs).
[0073] In one example, one or more instructions or steps discussed
herein are automated. The terms automated or automatically (and
like variations thereof) mean controlled operation of an apparatus,
system, and/or process using computers and/or mechanical/electrical
devices without the necessity of human intervention, observation,
effort and/or decision.
[0074] In this specification, example embodiments have been
presented in terms of a selected set of details. However, a person
of ordinary skill in the art would understand that many other
example embodiments may be practiced which include a different
selected set of these details. It is intended that the following
claims cover all possible example embodiments.
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