U.S. patent application number 13/849562 was filed with the patent office on 2013-10-31 for microstructure modification in copper interconnect structures.
The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Cyril Cabral, Jr., Jeffrey P. Gambino, Qiang Huang, Takeshi Nogami, Kenneth P. Rodbell.
Application Number | 20130285245 13/849562 |
Document ID | / |
Family ID | 47829120 |
Filed Date | 2013-10-31 |
United States Patent
Application |
20130285245 |
Kind Code |
A1 |
Cabral, Jr.; Cyril ; et
al. |
October 31, 2013 |
MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES
Abstract
A metal interconnect structure and a method of manufacturing the
metal interconnect structure. Manganese (Mn) is incorporated into a
copper (Cu) interconnect structure in order to modify the
microstructure to achieve bamboo-style grain boundaries in sub-90
nm technologies. Preferably, bamboo grains are separated at
distances less than the "Blech" length so that copper (Cu)
diffusion through grain boundaries is avoided. The added Mn also
triggers the growth of Cu grains down to the bottom surface of the
metal line so that a true bamboo microstructure reaching to the
bottom surface is formed and the Cu diffusion mechanism along grain
boundaries oriented along the length of the metal line is
eliminated.
Inventors: |
Cabral, Jr.; Cyril;
(Mahopac, NY) ; Gambino; Jeffrey P.; (Westford,
VT) ; Huang; Qiang; (Croton-on-Hudson, NY) ;
Nogami; Takeshi; (Schenectady, NY) ; Rodbell; Kenneth
P.; (Sandy Hook, CT) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Family ID: |
47829120 |
Appl. No.: |
13/849562 |
Filed: |
March 25, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13232085 |
Sep 14, 2011 |
8492897 |
|
|
13849562 |
|
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Current U.S.
Class: |
257/751 ;
438/643 |
Current CPC
Class: |
H01L 23/53238 20130101;
H01L 2924/0002 20130101; H01L 2924/0002 20130101; H01L 21/76873
20130101; H01L 21/76883 20130101; H01L 23/53233 20130101; H01L
21/76841 20130101; H01L 21/76877 20130101; H01L 21/7684 20130101;
H01L 21/2885 20130101; H01L 23/535 20130101; H01L 2924/00
20130101 |
Class at
Publication: |
257/751 ;
438/643 |
International
Class: |
H01L 23/535 20060101
H01L023/535; H01L 21/768 20060101 H01L021/768 |
Claims
1-22. (canceled)
23. A method of forming a metal interconnect structure comprising:
forming a dielectric material layer comprising a recessed line
pattern; forming a metallic barrier layer on the dielectric
material layer within the recessed line pattern; forming a
copper-containing seed layer on the metallic barrier layer within
the recessed line pattern; forming a copper-containing layer on the
copper-containing seed layer, wherein at least one of the
copper-containing seed layer and the copper-containing layer
comprises a copper-manganese alloy comprising a manganese
concentration ranging from about 1 ppm to about 10 atomic percent,
and wherein the copper-containing seed layer and the
copper-containing layer constitute a copper-manganese alloy line;
and forming a bamboo microstructure within the copper-manganese
alloy line, the bamboo microstructure comprising one or more grain
boundaries extending across a width and a height of the
copper-manganese alloy line.
24. The method of claim 23, wherein forming the bamboo
microstructure within the copper-manganese alloy line comprises:
annealing the copper-manganese alloy line at a temperature ranging
from about 20.degree. C. to about 400.degree. C. for a time period
ranging from about 1 second to about 1 week, wherein grain size
within the copper-manganese alloy line increases during the
annealing.
25. The method of claim 23, wherein forming the bamboo
microstructure within the copper-manganese alloy line comprises:
increasing grain size within the copper-manganese alloy line such
that a width of a grain is equal to the width of the
copper-manganese alloy line.
26. The method of claim 23, wherein forming the bamboo
microstructure within the copper-manganese alloy line comprises:
increasing grain size within the copper-manganese alloy line such
that a width and a height of a grain are equal to the width and the
height of the copper-manganese alloy line, respectively.
27. The method of claim 23, wherein forming the bamboo
microstructure within the copper-manganese alloy line comprises:
increasing grain size within the copper-manganese alloy line such
that each grain boundary is separated from any other grain boundary
by a distance equal to or greater than the width of the
copper-manganese alloy line.
28. A method of forming a metal interconnect structure comprising:
forming a dielectric material layer comprising a recessed line
pattern; forming a metallic barrier layer on the dielectric
material layer within the recessed line pattern; forming a
copper-containing seed layer on the metallic barrier layer within
the recessed line pattern; forming a copper-containing layer on the
copper-containing seed layer, wherein the copper-containing seed
layer and the copper-containing layer constitutes a metal line;
forming a copper-manganese alloy cap layer above the metal line,
wherein the copper-manganese alloy cap layer comprises a manganese
concentration ranging from about 1 ppm to about 50 atomic percent;
diffusing manganese from the copper-manganese alloy cap layer to
the metal line; and increasing the grain size within the metal line
such that one or more grain boundaries extend across a width and a
height of the metal line.
29. The method of claim 28, wherein diffusing manganese from the
copper-manganese alloy cap layer to the metal line comprises:
annealing the metal line and the copper-manganese alloy cap layer
at a temperature ranging from about 20.degree. C. to about
400.degree. C. for a time period from about 1 second to about 1
week, wherein grain size within the metal line increases during the
annealing.
30. The method of claim 28, wherein increasing the grain size
within the metal line such that one or more grain boundaries extend
across the width and the height of the metal line comprises:
increasing grain size within the metal line such that a width of a
grain is equal to the width of the metal line.
31. The method of claim 28, wherein increasing the grain size
within the metal line such that one or more grain boundaries extend
across the width and the height of the metal line comprises:
increasing grain size within the metal line such that a width and a
height of a grain are equal to the width and the height of the
metal line, respectively.
32. The method of claim 28, wherein increasing the grain size
within the metal line such that one or more grain boundaries extend
across the width and the height of the metal line comprises:
increasing grain size within the metal line such that each grain
boundary is separated from any other grain boundary by a distance
equal to or greater than the width of the metal line.
33. The method of claim 28, wherein increasing the grain size
within the metal line such that one or more grain boundaries extend
across the width and the height of the metal line comprises:
forming a bamboo microstructure.
34. The method of claim 28, wherein diffusing manganese from the
copper-manganese alloy cap layer to the metal line comprises:
forming a high concentration of manganese along one or more
interfaces as compared to the entire metal line, the interfaces
being between the metal line and the cap layer, and between the
metal line and the metallic barrier layer.
35. A structure comprising: a dielectric material layer containing
a recessed line pattern; a metallic barrier layer abutting the
dielectric material layer within the recessed line pattern; and a
copper-manganese alloy line abutting the metallic barrier layer
within the recessed line pattern and having an atomic concentration
of manganese ranging from about 1 ppm to about 10 atomic percent,
the copper-manganese alloy line comprising one or more grain
boundaries extending across a width and a height of the
copper-manganese alloy line.
36. The structure of claim 35, wherein the copper-manganese alloy
line has a bamboo microstructure, wherein the one or more grain
boundaries extends from a top surface of the copper-manganese alloy
line to a bottom surface of the copper-manganese alloy line, and is
separated from any other grain boundary by a distance greater than
the width of the copper-manganese alloy line.
37. The structure of claim 35, wherein a width of a grain is equal
to the width of the copper-manganese alloy line.
38. The structure of claim 35, wherein a width and a height of a
grain is equal to the width and the height of the copper-manganese
alloy line.
39. The structure of claim 35, wherein the copper-manganese alloy
line comprises oxygen (O), nitrogen (N), carbon (C), chlorine (Cl)
, and sulfur (S), a sum of concentrations of which ranges from
about 1 ppm to about 200 ppm.
40. The structure of claim 35, wherein the copper-manganese alloy
line comprises a manganese concentration ranging from about 10 ppm
to about 2 atomic percent.
41. The structure of claim 35, wherein a top surface of the
copper-manganese alloy line is substantially coplanar with a top
surface of the dielectric material layer.
42. The structure of claim 35, further comprising: a
copper-manganese alloy via of integral construction with the
copper-manganese alloy line, and free of any grain boundary
perpendicular to a substrate.
43. The structure of claim 42, wherein the metallic barrier layer
is of unitary construction and abuts and lines the copper-manganese
alloy via.
44. The structure of claim 35, further comprising: a
copper-manganese alloy cap containing a manganese concentration
ranging from about 1 ppm to about 50 atomic percent and abutting
the copper-containing layer.
45. The structure of claim 35, wherein the copper-manganese alloy
line comprises a higher concentration of manganese along one or
more interfaces, the interfaces being between the copper-manganese
alloy line and a cap layer, and between the copper-manganese alloy
line and the metallic barrier layer.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of U.S. patent
application Ser. No. 13/232,085, entitled MICROSTRUCTURE
MODIFICATION IN COPPER INTERCONNECT STRUCTURES, filed on Sep. 14,
2011, which is incorporated by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to semiconductor structures.
More particularly, the present invention relates to metal
interconnect structures having large grain sizes at a bottom of a
metal interconnect line and methods of manufacturing the same.
[0004] 2. Description of the Related Art
[0005] Current sub-90 nm copper interconnect technology has a
non-bamboo microstructure, that is, a microstructure without
bamboo-like features in lines and vias. The non-bamboo
microstructure leads to concerns associated with copper diffusion
such as electromigration and stress voiding.
[0006] There are currently three different modes of copper
diffusion. One mode is copper diffusion along grain boundaries of a
copper interconnect structure. Another mode is copper diffusion at
a surface of a copper interconnect structure, that is, at an
interface at which the copper interconnect structure adjoins
another material. An alternate mode is copper bulk diffusion
through grains, that is, across an interface at which two grain
boundaries meet. Typically, the rate of diffusion is higher for
copper diffusion along grain boundaries and lower for copper bulk
diffusion through grains. Thus, it is optimal to form a copper
interconnect structure containing a metal line in which the metal
line has a bamboo-like pattern in the grain microstructure, or a
"bamboo microstructure." In a bamboo microstructure, the lateral
width of a grain is the same as the width of the metal line or the
metal via. The length of the grain is greater than the width of the
metal line so that grain boundaries look like a stalk of a bamboo
plant with notched segmentation.
[0007] It is optimal to have a bamboo microstructure where grains
span the width and height of a line or via. The phenomenon of
electromigration occurs when a current flowing in the line, due to
an externally applied field, leads to a net drift of copper (Cu)
ions in the direction of the electron flow. The drift eventually
will lead to line failure due to loss of copper at divergent sites
such as grain boundaries and material interfaces. Because
electrical current flows along the direction of a metal line and
any electromigration is forced to occur "through," that is,
substantially perpendicular to the plane of grain boundaries, the
bamboo microstructure offers significantly more resistance to
electromigration than non-bamboo microstructures. The bamboo
microstructure essentially shuts down diffusion along grain
boundaries, because bamboo grain boundaries are substantially at
right angles to the current flow.
[0008] An alternative way of suppressing electromigration in a
metal interconnect structure exists. If the length of a metal line
is less than the "Blech" length, copper ion motion will not occur,
shutting down the electromigration process. Mechanical stress at
lengths less than the "Blech" length opposes the drift of copper
ions. A typical Blech length is 10 microns for current interconnect
structures consisting of copper. In principle, designing all
interconnect metal lines shorter than the "Blech" length would
solve the problem. In practice, such a limitation puts a severe
constraint on the design and layout of an interconnect structure,
and practically renders such layouts impractical.
[0009] In a related patent, U.S. Pat. No. 7,843,063, commonly
assigned, it is disclosed that cobalt (Co) has a similar property,
promoting normal grain growth (growth of all orientations
simultaneously) or abnormal grain growth (growth of certain
orientations preferential to others) in the fine lines and vias
leading to bamboo grains (spanning the line width and height).
Although, cobalt (Co) and manganese (Mn) have similar properties,
Mn has a better optimal percentage over the use of Co.
[0010] The use of Cu--Mn seed layers has been contemplated in order
to form "self-forming" diffusion barriers. The Mn is placed in the
Cu seed layer and after thermal treatment diffuses to interfaces
reacting with oxygen (O) to form manganese oxide (MnO) and possibly
manganese silicate (MnSiO) layers. These layers at the
dielectric-copper (Cu) interface or barrier-copper (Cu) interface
act as diffusion barriers. Some publications that describe the use
of MnO as a diffusion barrier are: [0011] J. Koike et al., Appl.
Phys. Lett. 87, (2005), 041911; J. Iijima et al., Proc. of IITC,
(2006), 246; [0012] T. Watanabe et al., Proc. of IITC, (2007), 7;
M. Haneda et al., Proc. of AMC (2207), 59.
[0013] Suppressing copper diffusion without resorting to use of a
design rule stipulating that all metal interconnect lines be
shorter than the "Blech" length is needed. Thus, there exists a
need for metal interconnect structures having fine feature sizes
such as sub-90 nm metal lines, i.e. metal lines having a width less
than 90 nm, and containing bamboo microstructures so that copper
diffusion and associated complications can be avoided. A bamboo
grain, one spanning the width and height of an interconnect or via,
every "Blech" length (10 .mu.m), will substantially stop
electromigration along grain boundaries.
SUMMARY OF THE INVENTION
[0014] The present invention incorporates manganese into a copper
interconnect structure in order to modify the microstructure to
achieve bamboo-style grain boundaries in sub-90 nm
technologies.
[0015] According to an embodiment of the present invention, a metal
interconnect structure is provided. The metal interconnect
structure includes: a dielectric material layer containing a
recessed line pattern; a metallic barrier layer abutting the
dielectric material layer at sidewalls of the recessed line pattern
and overlying an entirety of the dielectric material layer; a
copper-containing seed layer abutting the metallic barrier layer
and overlying an entirety of the dielectric material layer; and a
copper-containing layer including electroplated copper and abutting
the copper-containing seed layer, wherein at least one of the
copper-containing seed layer and the copper-containing layer
includes a copper-manganese alloy, and wherein the
copper-containing seed layer and the copper-containing layer form a
bamboo grain within the recessed line pattern, the grain size
measured at a bottom surface of the copper-containing layer
exceeding a width of the copper-manganese alloy line at least every
"Blech" length.
[0016] According to a further embodiment of the present invention,
another metal interconnect structure is provided. The metal
interconnect structure includes: a dielectric material layer
containing a recessed line pattern; a metallic barrier layer
abutting the dielectric material layer at sidewalls of the recessed
line pattern and overlying an entirety of the dielectric material
layer; a copper-containing seed layer abutting the metallic barrier
layer and overlying an entirety of the dielectric material layer; a
copper-containing layer including electroplated copper and abutting
the copper-containing seed layer, wherein the copper-containing
seed layer and the copper-containing layer form a bamboo grain
within the recessed line pattern, the grain size measured at a
bottom surface of the copper-containing layer exceeding a width of
the copper-manganese alloy line at least every "Blech" length; and
a copper-manganese alloy cap layer abutting the copper-containing
layer.
[0017] According to another embodiment of the present invention, a
further metal interconnect structure is provided. The metal
interconnect structure includes: a plated copper layer containing a
line pattern; a copper-manganese seed layer having an atomic
concentration of manganese from about 1 ppm to about 20 atomic
percent at the bottom surface of the plated copper line sandwiched
between the plated copper line and a barrier layer all of which are
patterned, wherein a grain size measured at a bottom of the
copper-manganese alloy line exceeds a width of the copper-manganese
alloy line at least every "Blech" length; and a barrier and
dielectric layer surrounding the copper manganese alloy line.
[0018] According to a further embodiment of the present invention,
a method of forming a metal interconnect structure is provided. The
method includes: providing a dielectric material layer containing a
recessed line pattern; forming a metallic barrier layer on the
dielectric material layer at sidewalls of the recessed line
pattern; forming a copper-containing seed layer on the metallic
barrier layer; and electroplating a copper-containing layer on the
copper-containing seed layer, wherein at least one of the
copper-containing seed layer and the copper-containing layer
includes a copper-manganese alloy containing a manganese
concentration from about 1 ppm to about 10 atomic percent.
[0019] According to another embodiment of the present invention, a
further method of forming a metal interconnect structure is
provided. The method includes: providing a dielectric material
layer containing a recessed line pattern; forming a metallic
barrier layer directly on the dielectric material layer at
sidewalls of the recessed line pattern; forming a copper-containing
seed layer directly on the metallic barrier layer; electroplating a
copper-containing layer directly on the copper-containing seed
layer; and forming a copper-manganese alloy cap layer containing a
manganese concentration from about 1 ppm to about 50 atomic percent
directly on the copper-containing layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] The features and elements of the present invention are set
forth with respect to the appended claims and illustrated in the
drawings.
[0021] FIG. 1 illustrates a schematic cross section of a first
embodiment of the metal interconnect structure of the present
invention.
[0022] FIG. 2 illustrates a schematic cross section of a second
embodiment of the metal interconnect structure of the present
invention.
[0023] FIG. 3 illustrates a schematic cross section of a third
embodiment of the metal interconnect structure of the present
invention.
[0024] FIG. 4A-4E illustrates the method of manufacturing the metal
interconnect structure of the present invention.
[0025] FIG. 5 illustrates a schematic cross section of a fourth
embodiment of the metal interconnect structure of the present
invention.
[0026] FIG. 6 illustrates a plot of percentage decrease in sheet
resistance versus time at room temperature for a 500 nm plated
copper film on a 30 nm Cu--Mn seed layer on silicon oxide.
[0027] FIG. 7 illustrates a plot of percentage decrease in sheet
resistance versus time at room temperature for a 300 nm plated
copper film on a 30 nm Cu--Mn seed layer on silicon oxide.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0028] The following describes embodiments of the present invention
with reference to the drawings. The embodiments are illustrations
of the invention, which can be embodied in various forms. The
present invention is not limited to the embodiments described
below, rather representative for teaching one skilled in the art
how to make and use it. Some aspects of the drawings repeat from
one drawing to the next. The aspects retain their same numbering
from their first appearance throughout each of the preceding
drawings.
[0029] The present invention incorporates manganese (Mn) into a
copper (Cu) interconnect structure in order to modify the
microstructure to achieve bamboo-style grain boundaries in sub-90
nm technologies. Preferably, bamboo grains are separated at
distances less than the "Blech" length so that copper (Cu)
diffusion through grain boundaries is avoided. The manganese (Mn)
can be incorporated into a copper (Cu) seed layer to be formed
under a metal line, as a capping layer to be formed over a metal
line, or during a plating process. Annealing the copper (Cu)
interconnect structure at room temperature or above induces grain
growth (recrystallization) at a faster rate when Mn is added to a
Cu seed layer. The added Mn also triggers the growth of Cu grains
down to the bottom surface of the metal line so that a true bamboo
microstructure reaching to the bottom surface is formed and the Cu
diffusion mechanism along grain boundaries oriented along the
length of the metal line is eliminated.
[0030] Manganese (Mn) is added to the copper (Cu) seed layer, the
copper (Cu) plating layer or the copper (Cu) capping layer in order
to modify the microstructure of copper (Cu) lines and vias. The
manganese (Mn) can be in the form of a copper manganese alloy or as
a very thin manganese (Mn) layer. The manganese (Mn) can promote
normal grain growth (growth of all orientations simultaneously) or
abnormal grain growth (growth of certain orientations preferential
to others) in the fine lines and vias leading to bamboo grains
(spanning the line width and height). Tailored to occur at a
distance less than the "Blech" length, the grain boundaries
configured in bamboo microstructure in the inventive metal
interconnect structure shut down copper (Cu) grain boundary
diffusion. At least one bamboo grain (at right angles to the
current flow) every "Blech" length acts as a blocking site for
copper (Cu) diffusion. The composition of the metal interconnect
structure after grain growth contains from about 1 ppm to about 10%
of manganese (Mn) in atomic concentration.
[0031] Referring to FIG. 1, a metal interconnect structure
according to a first embodiment of the present invention includes a
dielectric layer 110, a metallic barrier layer 120, a
copper-manganese alloy seed layer 130, and a plated
copper-containing layer 140. The dielectric layer 110 is typically
formed on a semiconductor substrate (not shown) containing
semiconductor devices (not shown). The dielectric layer 110
includes a dielectric material such as silicon oxide (SiO), silicon
nitride (SiN), organosilicate glass (OSG), SiCOH, a spin-on low-k
dielectric material such as SiLK.TM., etc. The dielectric layer 110
may be porous or non-porous. A via cavity overlaps with the line
cavity in an integration scheme that is known in the art as dual
damascene integration scheme.
[0032] For illustrative purposes, the present invention is
described for a dual damascene integration scheme. However,
variations of the present invention in a single damascene
integration scheme are contemplated, in which the metal vias and
metal lines are formed by two separated electroplating processes.
In the event a single damascene integration scheme is used, the
methods of the present invention are preferably repeated twice, a
first time, to form the metal vias containing a copper-manganese
alloy and having a single grain or large grains with boundaries
running perpendicular to the via (parallel to the substrate), and a
second time, to form metal lines containing a copper-manganese
alloy having the same bamboo structure as the bamboo structure to
be described below for the dual damascene integration scheme.
[0033] The metallic barrier layer 120 is formed to prevent
diffusion of contaminants from and/or into a metal via and a metal
line to be subsequently formed, as well as to promote adhesion of
the metal via and the metal line to the dielectric layer 110. The
metallic barrier layer 120 may include Ta, TaN, W, WN, TiN, or a
stack thereof such as Ta/TaN, Ta/TaN/Ta, TaN/Ta, etc. The metallic
barrier layer 120 may be formed by chemical vapor deposition (CVD),
physical vapor deposition (PVD), atomic layer deposition (ALD),
etc. The thickness of metallic barrier layer 120, as measured at a
bottom surface of the line cavity, ranges from about 1 nm to about
25 nm, and typically from about 3 nm to about 10 nm, although
lesser and greater thicknesses are also contemplated herein.
[0034] The copper-manganese alloy seed layer 130 is formed on the
metallic barrier layer 120, for example by physical vapor
deposition (PVD), chemical vapor deposition, atomic layer
deposition (ALD), electrodeposition, or electroless deposition. The
copper-manganese alloy seed layer 130 is a copper-containing seed
layer, which also includes manganese, i.e., includes an alloy of
copper and manganese. The concentration of manganese in the
copper-manganese alloy seed layer 130 may be from about 1 ppm to 10
atomic percent and preferably from about 10 ppm to about 2 atomic
percent. Incorporation of manganese into the copper-manganese alloy
130 may be effected, for example, by replacing pure copper in a
sputtering target of a PVD process with a target containing a
copper-manganese alloy.
[0035] The copper-manganese alloy seed layer 130, as deposited, has
a polycrystalline structure in which the average size of the grains
is comparable with the thickness of the copper-manganese alloy seed
layer 130 or less. Typically, the copper-manganese alloy seed layer
130 has an average grain size from about 2 nm to about 10 nm. The
thickness of the copper-manganese alloy seed layer 130, as measured
above a bottom surface of the line cavity, may be from about 2 nm
to about 60 nm and typically from about 5 nm to about 50 nm,
although lesser and greater thicknesses are also contemplated
herein.
[0036] The plated copper-containing layer 140 is formed by plating
a copper-containing material on the copper-manganese alloy seed
layer 130. The plating process may employ electroplating or
electroless plating. The plated copper-containing layer 140, due to
the nature of the process employed for formation, i.e., due to the
nature of the plating process, includes O, N, C, Cl, and S. The sum
of concentrations of O, N, C, Cl, and S is typically from about 1
ppm to about 200 ppm. Preferably, the plated copper-containing
layer 140 is formed by electroplating. Typically, a superfill
(bottom-up fill) process is employed to prevent formation of any
seam within the via cavity or the line cavity so that the plated
copper-containing layer 140 is free of any cavity therein.
[0037] The plated copper-containing layer 140 may, or may not,
include manganese. In one case, the plated copper-containing layer
140 may consist essentially of copper, so that any material other
than copper in the plated copper-containing layer 140 is at a trace
level. In another case, the plated copper-containing layer 140 may
include a copper-manganese alloy with a manganese concentration
from about 1 ppm to 10 atomic percent, and preferably from about 10
ppm to about 2 atomic percent. Incorporation of manganese into the
plated copper-containing layer 140 may be effected by replacing a
plating bath containing a solution of a copper-manganese alloy,
i.e., adding manganese to the plating bath so that manganese is
incorporated into the film during plating.
[0038] The thickness of the plated copper-containing layer 140, as
measured outside the area containing the via cavity and the line
cavity prior to the filling thereof by the plated copper-containing
layer 140, may be from about 40 nm to about 800 nm, and typically
from about 100 nm to about 300 nm, although lesser and greater
thicknesses are contemplated herein also. As deposited, the plated
copper-containing layer 140 has a microstructure in which the grain
size is from about 5 nm to about 400 nm, and typically from about
10 nm to about 200 nm, although the grain size depends on the
details of the plating process and may be less than or greater than
the range indicated above.
[0039] The first exemplary metal interconnect structure is
subjected to a recrystallization process in which the grains in the
copper-manganese alloy seed layer 130 and the plated
copper-containing layer 140 grow. The recrystallization process
typically employs an anneal at a temperature from about 20.degree.
C. to about 400.degree. C. for a time period from about 1 second to
about 1 week. The grain size increases during the annealing within
the copper-manganese alloy seed layer 130 and the plated
copper-containing layer 140. While an anneal above 50.degree. C. is
preferred, some degree of recrystallization occurs at room
temperature so that the present invention may be advantageously
employed even without an anneal process, i.e., by leaving the first
exemplary metal interconnect structure alone at room temperature
from an extended time, and thereby increasing the size of the
grains.
[0040] The manganese added into copper-manganese alloy seed layer
130 affects the microstructure of a copper-manganese alloy layer,
which is formed by the recrystallization of the copper-manganese
alloy seed layer 130 and the plated copper-containing layer 140,
after the recrystallization process. Manganese forms no
intermetallic compounds with copper. Thus, manganese precipitates
in the grain boundaries during the recrystallization process.
Manganese also induces growth of large grains even at the interface
with the metallic barrier layer 120 such that the size of the
grains is substantially the same at the top of the copper-manganese
alloy layer as at the bottom of the copper-manganese alloy
layer.
[0041] According to the present invention, manganese in the
copper-manganese alloy seed layer 130 nucleates new grains in the
plated copper-containing layer 140 so that the grains in the plated
copper-containing layer 140 may grow to dimensions larger than the
feature size of metal lines to be subsequently formed. Further,
grain growth extends into the copper-manganese alloy seed layer 130
so that the entirety of the copper-manganese alloy layer is
affected by the grain growth. In addition, the plated
copper-containing layer 140 may optionally supply additional
manganese to accelerate the grain growth during the
recrystallization process.
[0042] The copper-manganese alloy layer, which has been through the
recrystallization process, has grain sizes larger than the
thickness as measured over a line feature area of the
copper-manganese alloy layer to the top surface of the dielectric
layer 110. The bottom portion of the copper-manganese alloy layer,
including the portions corresponding to the via cavity and the line
cavity prior to formation of the copper-manganese alloy seed layer
130, in the first exemplary metal interconnect structure contains
substantially few small grains. The grain size of the bottom
portion of the copper-manganese alloy layer is substantially the
same as the grain size of the top portion of the copper-manganese
alloy layer, and is thus greater than the thickness of the
copper-manganese alloy layer. The absence of a network of small
size grains at the bottom portion of the copper-manganese alloy
layer prevents diffusion of copper atoms or manganese atoms along a
grain boundary. Grain boundaries that are present within a recessed
line feature tend to run in the direction of the width of the
recessed line feature. Thus, the grain boundaries in the
copper-manganese alloy layer substantially do not join one another,
and the copper-manganese alloy layer has a bamboo microstructure in
which grain boundaries within the bamboo microstructure extend to a
bottom surface of copper-manganese alloy layer and separated from
one another by at least one grain. A bamboo grain every "Blech"
length substantially stops electromigration induced by grain
boundary diffusion.
[0043] The copper-manganese alloy layer is planarized, for example,
by chemical mechanical planarization, to form a copper-manganese
alloy line that is substantially coplanar with a top surface of the
dielectric layer 110. The grain size near the top surface of the
copper-manganese alloy line may be about, or greater than, 2 to 3
times the width of the copper-manganese alloy line. Thus, the
copper-manganese alloy line substantially has a bamboo
microstructure throughout and is free of small grains having a size
less than the width of the copper-manganese alloy line. The
bamboo-style segmentation between grain boundaries is substantially
present throughout the entirety of the copper-manganese alloy line.
The bamboo microstructure eliminates copper diffusion along grain
boundaries since any remaining grain boundaries are substantially
perpendicular to the direction of current flow.
[0044] Referring to FIG. 2, a second exemplary metal interconnect
structure according to a second embodiment of the present invention
includes a dielectric layer 110, a metallic barrier layer 120, a
copper-containing seed layer 230, and a plated copper-manganese
alloy layer 240. The dielectric layer 110 is typically formed on a
semiconductor substrate (not shown) containing semiconductor
devices (not shown) and may include the same materials as in the
first embodiment. A via cavity and a line cavity are formed within
the dielectric layer 110 by lithographic patterning and etching
such that the via cavity overlaps with the line cavity in an
integration scheme that is known in the art as a dual damascene
integration scheme. The metallic barrier layer 120 is formed in the
same manner as, and has the same composition and thickness as in
the first embodiment.
[0045] The copper-containing seed layer 230 is formed on the
metallic barrier layer 120, for example, by physical vapor
deposition (PVD), chemical vapor deposition (CVD), atomic layer
deposition (ALD), electrodeposition or electroless deposition. The
copper-containing seed layer 230 may, or may not, include
manganese. In one case, the copper-containing seed layer 230 may
consist essentially of copper, so that any material other than
copper in the copper-containing seed layer 230 is at a trace level.
In another case, the copper-containing seed layer 230 may include a
copper-manganese alloy with a manganese concentration from about 1
ppm to 10 atomic percent and preferably from about 10 ppm to about
2 atomic percent. Incorporation of manganese into the
copper-containing seed layer 230 may be effected, for example, by
replacing pure copper in a sputtering target of a PVD process with
a target containing copper-manganese alloy.
[0046] The copper-containing seed layer 230, as deposited, has a
polycrystalline structure in which the average size of the grains
is comparable with the thickness of the copper-containing seed
layer 230 or less. Typically, the copper-containing seed layer 230
has an average grain size from about 2 nm to about 10 nm. The
thickness of the copper-containing seed layer 230, as measured
above a bottom surface of the line cavity, may be from about 2 nm
to about 60 nm, and typically from about 5 nm to about 50 nm,
although lesser and greater thicknesses are also contemplated
herein.
[0047] The plated copper-manganese alloy layer 240 is formed by
plating a copper-manganese alloy on the copper-containing seed
layer 230. The plating process may employ electroplating or
electroless plating. The plated copper-manganese alloy layer 240,
due to the nature of the process employed for formation, i.e., due
to the nature of the plating process, includes O, N, C, Cl and S.
The sum of concentrations of O, N, C, Cl and S is typically from
about 1 ppm to about 200 ppm. Preferably, the plated
copper-manganese alloy layer 240 is formed by electroplating.
Typically, a superfill (bottom-up fill) process is employed to
prevent formation of any seam within the via cavity or the line
cavity so that the plated copper-manganese alloy layer 240 is free
of any cavity therein.
[0048] The plated copper-manganese alloy layer 240 is a copper
containing layer which also includes manganese, that is, includes
an alloy of copper and manganese. Not necessarily but preferably,
metallic components of the plated copper-manganese alloy layer 240
may consist of copper and manganese. The concentration of manganese
in the plated copper-manganese alloy layer 240 may be from about 1
ppm to about 10 atomic percent, and preferably from about 10 ppm to
about 2 atomic percent. Incorporation of manganese into the plated
copper-manganese alloy layer 240 may be effected, for example, by
replacing a plating bath containing a solution of pure copper with
plating bath containing a solution of copper-manganese alloy, that
is, adding manganese to the plating bath so that manganese is
incorporated into the film during plating.
[0049] The thickness of the plated copper-manganese alloy layer
240, as measured outside the area containing the via cavity and the
line cavity prior to the filling thereof by the plated
copper-containing layer, may be from about 40 nm to about 800 nm,
and typically from about 100 nm to about 300 nm, although lesser
and greater thicknesses are contemplated herein also. As deposited,
the plated copper-manganese alloy layer 240 has a microstructure in
which the grain size is from about 5 nm to about 400 nm, and
typically from about 10 nm to about 200 nm, although the grain size
depends on the details of the plating process and may be less than
or greater than the range indicated above.
[0050] The second exemplary metal interconnect structure is
subjected to a recrystallization process in which the grains in the
copper-containing seed layer 230 and the plated copper-manganese
alloy layer 240 grow. After the recrystallization process, the
second exemplary metal interconnect structure is substantially the
same as the first exemplary metal interconnect structure of FIG. 1
of the first embodiment. The copper-containing seed layer 230 and
the plated copper-manganese alloy layer 240 constitute a
copper-manganese alloy layer. The same kind of recrystallization
process may be employed as in the first embodiment, and the grain
size increases in the same manner as in the first embodiment. The
manganese added into plated copper-manganese alloy layer 240
affects the microstructure of a copper-manganese alloy layer, which
is formed by the recrystallization of the copper-containing seed
layer 230 and the plated copper-manganese alloy layer 240.
Manganese precipitates in the grain boundaries during the
recrystallization process in the same manner as in the first
embodiment. Manganese induces growth of large grains even at the
interface with the metallic barrier layer 220 such that the size of
the grains is substantially the same at the top of a
copper-manganese alloy layer, which is substantially the same as
the copper-manganese alloy layer, 140 in FIG. 1, as the bottom of
the copper-manganese alloy layer.
[0051] The second exemplary metal interconnect structure is
substantially the same as the first exemplary metal interconnect
structure as shown in FIG. 1. The copper-manganese alloy layer is
planarized in the same manner as in the first embodiment to form a
copper-manganese alloy line. The second exemplary metal
interconnect structure at this point is substantially the same as
the first exemplary metal interconnect structure in FIG. 1. The
second exemplary metal interconnect structure includes the
copper-manganese alloy line, which substantially has a bamboo
microstructure, and is free of a network of small grains having a
size less than the width of the copper-manganese alloy line. The
bamboo-style segmentation between grain boundaries is substantially
present through the copper-manganese alloy line as in the first
exemplary metal interconnect structure. Thus, the bamboo
microstructure eliminates copper diffusion along grain boundaries
because any remaining grain boundaries are substantially
perpendicular to the direction of current flow.
[0052] Referring to FIG. 3, a third exemplary metal interconnect
structure according to a third embodiment of the present invention
includes a dielectric layer 110, a metallic barrier layer 120, a
copper-containing seed layer 330, plated copper-containing layer
340, and a copper-manganese alloy cap layer 350. The dielectric
layer 110 is typically formed on a semiconductor substrate (not
shown) containing semiconductor devices (not shown), and may
include the same material as in the first embodiment. A via cavity
and a line cavity is formed within the dielectric layer 110 by
lithographic patterning and etching such that the via cavity
overlaps with the line cavity in an integration scheme that is
known in the art as a dual damascene integration scheme. The
metallic barrier layer 120 is formed in the same manner as, and has
the same composition and thickness as, in the first embodiment.
[0053] The copper-containing seed layer 330 is formed on the
metallic barrier layer 120, for example, by physical vapor
deposition (PVD), chemical vapor deposition (CVD), atomic layer
deposition (ALD), electrodeposition, or electroless deposition. The
copper-containing seed layer 330 may, or may not, include
manganese. In one case, the copper-containing seed layer 330 may
consist essentially of copper, so that any material other than
copper in the copper-containing seed layer 330 is at a trace level.
In another case, the copper-containing seed layer 330 may include a
copper-manganese alloy with a manganese concentration from about 1
ppm to 10 atomic percent, and preferably from about 10 ppm to about
2 atomic percent. Incorporation of manganese into the
copper-containing seed layer 330 may be effected, for example, by
replacing pure copper in a sputtering target of a PVD process with
a target containing a copper-manganese alloy. The copper-containing
seed layer 330, as deposited, may have the same polycrystalline
structure and thickness as in the first embodiment.
[0054] The plated copper-containing layer 340 is formed by plating
a copper-containing material on the copper-containing seed layer
330. The plating process may employ electroplating or electroless
plating. The plated copper-containing layer 340, due to the nature
of the process employed for formation, that is, due to the nature
of the plating process, includes O, N, C, Cl and S. The sum of
concentrations of O, N, C, Cl and S is typically from about 1 ppm
to about 200 ppm. Preferably, the plated copper-containing layer
340 is formed by electroplating. Typically, a superfill (bottom-up
fill) process is employed to prevent formation of any seam within
the via cavity or the line cavity so that the plated
copper-containing layer 340 is free of any cavity therein.
[0055] The plated copper-containing layer 340 may, or may not,
include manganese. In one case, the plated copper-containing layer
340 may consist essentially of copper, so that any material other
than copper in the plated copper-containing layer 340 is at a trace
level. In another case, the plated copper-containing layer 340 may
include a copper-manganese alloy with a manganese concentration
from about 1 ppm to 10 atomic percent, and preferably from about 10
ppm to about 2 atomic percent. Incorporation of manganese into the
plated copper-containing layer 340 may be effected by replacing a
plating bath containing a solution of pure copper with a plating
bath containing a solution of copper-manganese alloy, that is,
adding manganese to the plating bath so that manganese is
incorporated into the film during plating. The microstructure and
the thickness of the plated copper-containing layer 340 may be the
same as in the first embodiment.
[0056] The copper-manganese alloy cap layer 350 includes an alloy
of copper and manganese, and may consist of an alloy of copper and
manganese. The concentration of manganese in the copper-manganese
alloy cap layer 350 may be from about 1 ppm to about 50 atomic
percent, and preferably from about 10 ppm to about 40 atomic
percent, and more preferably from about 100 ppm to about 30 atomic
percent. The copper-manganese alloy cap layer 350 may be formed,
for example, by physical vapor deposition (PVD), chemical vapor
deposition (CVD), atomic layer deposition (ALD), electrodeposition,
or electroless deposition.
[0057] The thickness of the copper-manganese alloy cap layer 350
may be from about 1 nm to about 50 nm, and typically from about 3
nm to about 30 nm, although lesser and greater thicknesses are
contemplated herein also. As deposited, the copper-manganese alloy
cap layer 350 has a microstructure in which the grain size is from
about 2 nm to about 20 nm, and typically from about 5 nm to about
10 nm, although grain size depends on the details of the deposition
process and may be less than or greater than the range indicated
above.
[0058] The third exemplary metal interconnect structure is
subjected to a recrystallization process in which the grains grow
in the copper-manganese alloy cap layer 350, the plated
copper-containing layer 340, and the copper-containing seed layer
330. After the recrystallization process, the third exemplary metal
interconnect structure is substantially the same as the first
exemplary metal interconnect structure of FIG. 1 of the first
embodiment. The copper-manganese alloy cap layer 350, the plated
copper-containing layer 340, and the copper-containing seed layer
330 collectively become a copper-manganese alloy layer. The same
kind of recrystallization process may be employed as in the first
embodiment, and the grain size increases in the same manner as in
the first embodiment. The manganese added into the copper-manganese
alloy cap layer 350 affects the microstructure of a
copper-manganese alloy layer after the recrystallization process.
Manganese precipitates in the grain boundaries during the
recrystallization process in the same manner as in the first
embodiment. Manganese induces growth of large grains at the top
interface with the copper-manganese cap layer 350 such that the
size of the grains is substantially the same at the top of the
copper-manganese cap alloy layer as at the bottom of the
copper-manganese alloy layer.
[0059] Manganese present in the copper-manganese alloy cap layer
350 triggers grain growth during the recrystallization process. The
grain growth extends into the plated copper-containing layer 340
and the copper-containing seed layer 330 so that the entirety of
the copper-manganese alloy layer, which results from the
copper-manganese alloy cap layer 350, the plated copper-containing
layer 340, and the copper-containing seed layer 330, is affected by
the grain growth. If the plated copper-containing layer 340 further
includes manganese, the additional manganese in the
copper-containing seed layer 330 may also promote the grain growth
during the recrystallization process.
[0060] The third exemplary metal interconnect structure is
substantially the same as the first exemplary metal interconnect
structure as shown in FIG. 1, and accordingly, the same physical,
compositional, and structural characteristics. The copper-manganese
alloy layer is planarized in the same manner as in the first
embodiment to form a copper-manganese alloy line. The third
exemplary metal interconnect structure at this point is
substantially the same as the first exemplary metal interconnect
structure in FIG. 1. The third exemplary metal interconnect
structure includes the copper-manganese alloy line, which has a
substantially bamboo microstructure, and is substantially free of
small grains having a size less than the width of the
copper-manganese alloy line. The bamboo-style segmentation between
grain boundaries is substantially present through the
copper-manganese alloy line as in the first exemplary metal
interconnect structure. Thus, the bamboo microstructure eliminates
copper diffusion along grain boundaries because any remaining grain
boundaries are substantially perpendicular to the direction of
current flow. A bamboo grain every "Blech" length substantially
stops electromigration induced by grain boundary diffusion.
[0061] Referring to FIGS. 4A-4E, a method of forming the metal
interconnect structures described above is shown. A dielectric
material 110 is provided on a pre-existing semiconductor structure
(not shown). The dielectric material 110 has been etched to form a
recessed line pattern in the dielectric material 110. A metallic
barrier layer 120 is formed on the dielectric material 110.
Preferably, the metallic barrier layer 120 is formed along a top
portion and sidewalls of the recessed line pattern in dielectric
material 110. A copper-containing seed layer 430 is formed on the
metallic barrier layer, preferably on a top portion and on
sidewalls of the recessed line pattern on the dielectric material
110. A copper-containing layer 440 is deposited and electroplated
on the copper-containing seed layer 430. At least one of the
copper-containing seed layer 430 and copper-containing layer 440
includes a copper-manganese alloy. The copper-manganese alloy
contains a manganese concentration from about 1 ppm to about 10
atomic percent. Preferably, the copper-manganese alloy contains a
manganese concentration from about 10 ppm to about 2 atomic
percent. A copper-manganese alloy cap layer 350 may also be formed
on the copper-containing layer 440. The copper-manganese alloy cap
layer 350 preferably has a manganese concentration from about 1 ppm
to about 50 atomic percent.
[0062] The copper-containing seed layer 430 and the
copper-containing layer 440 are annealed at a temperature from
about 20.degree. C. to about 400.degree. C. for a time period from
about 1 second to about 1 week. During the annealing process, the
grain size increases in the copper-containing layer 440 and the
copper-containing seed layer 430. The increase in grain size also
decreases resistance within the copper-containing seed layer 430
and the copper-containing layer 440. The copper-containing seed
layer 430 and copper-containing layer 440 substantially form a
bamboo microstructure within the recessed line pattern. Grain
boundaries within the bamboo microstructure extend to a bottom
surface of the copper-containing layer 440 at least every "Blech"
length. Some of the manganese (Mn) will diffuse to the surfaces of
the recessed line pattern and react with any available oxygen
(O.sub.2) forming a manganese oxide (MnO) or manganese silicate
(MnSiO) layer, thus removing the manganese alloy from the copper
(Cu). The grain size may be increased in such a way that grain
boundaries are separated from one another by at least a width of a
metal line at a bottom surface of the metal line.
[0063] As shown in FIG. 5, the copper-containing layer 440 is
planarized, stopping at the top of the dielectric layer 110. A
remaining portion of the copper-containing seed layer 430 and the
copper-containing layer 440 constitutes a copper-manganese alloy
line. The grain size measured at a bottom of the copper-manganese
alloy line can exceed a width of the copper-manganese alloy line.
The copper-manganese alloy line substantially has a bamboo
microstructure where each grain boundary extends from a top surface
of the copper-manganese alloy line to a bottom surface of the
copper-manganese alloy line and is separated from any other grain
boundary by a distance greater than the width of the
copper-manganese alloy line.
[0064] FIG. 6 shows a plot of percentage decrease in sheet
resistance versus time at room temperature for a 500 nm plated
copper film on a 30 nm Cu--Mn seed layer on a silicon oxide. The
percentage of Mn in the copper seed layer ranges from 0.15 to 0.84
atomic percent Mn. It is clear that the plated Cu sheet resistance
drops much quicker on the Cu--Mn seed layers with 0.84 atomic
percent Mn showing fastest drop, complete within 5 hrs. The sheet
resistance is a measure of the room temperature Cu grain growth
(recrystallization), which is well known for plated Cu films. The
Mn enhances the recrystallization. After 11.5 days, the pure Cu
seed layer shows a sheet resistance drop of only approximately 8%,
whereas on the Cu--Mn seed layers recrystallization is complete
after approximately 1.5 days.
[0065] FIG. 7 similarly illustrates a percentage decrease in sheet
resistance versus time at room temperature for a plated copper film
on a Cu--Mn seed layer on a silicon oxide. In FIG. 7, the thickness
of the plated Cu film is 300 nm thick. Again, the Cu--Mn seed
layers enhance the Cu recrystallization, with the 0.84 atomic
percent Mn showing the fastest recrystallization rate.
[0066] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a", "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprises" and/or "comprising," when used in this
specification, specify the presence of stated features, integers,
steps, operations, elements, and/or components, but do not preclude
the presence or addition of one or more other features, integers,
steps, operations, elements, components, and/or groups thereof.
[0067] The corresponding structures, materials, acts, and
equivalents of all means or step plus function elements in the
claims below are intended to include any structure, material, or
act for performing the function in combination with other claimed
elements as specifically claimed. The description of the present
invention has been presented for purposes of illustration and
description, but is not intended to be exhaustive or limited to the
invention in the form disclosed. Many modifications and variations
will be apparent to those of ordinary skill in the art without
departing from the scope and spirit of the invention. The
embodiment was chosen and described in order to best explain the
principles of the invention and the practical application, and to
enable others of ordinary skill in the art to understand the
invention for various embodiments with various modifications as are
suited to the particular use contemplated.
* * * * *