U.S. patent application number 13/398081 was filed with the patent office on 2013-08-22 for semiconductor packaging method and structure thereof.
This patent application is currently assigned to CHIPBOND TECHNOLOGY CORPORATION. The applicant listed for this patent is Yung-Wei Hsieh, Bo-Shiun Jiang, Cheng-Fan Lin, Shu-Chen Lin, Cheng-Hung Shih. Invention is credited to Yung-Wei Hsieh, Bo-Shiun Jiang, Cheng-Fan Lin, Shu-Chen Lin, Cheng-Hung Shih.
Application Number | 20130214407 13/398081 |
Document ID | / |
Family ID | 48808662 |
Filed Date | 2013-08-22 |
United States Patent
Application |
20130214407 |
Kind Code |
A1 |
Shih; Cheng-Hung ; et
al. |
August 22, 2013 |
SEMICONDUCTOR PACKAGING METHOD AND STRUCTURE THEREOF
Abstract
A semiconductor packaging method includes providing a substrate
having a plurality of pads, each of the pads comprises a first
coupling surface having a plurality of first conductive contact
areas and a plurality of first non-conductive contact areas;
forming a conductible gel with anti-dissociation function on the
substrate, said conductible gel includes a plurality of conductive
particles and a plurality of anti-dissociation substances; mounting
a chip on the substrate, said chip comprises a plurality of
copper-containing bumps, each of the copper-containing bumps
comprises a ring surface and a second coupling surface having a
plurality of second conductive contact areas and a plurality of
second non-conductive contact areas, wherein the conductive
particles are electrically connected with the first conductive
contact areas and the second conductive contact areas, said
anti-dissociation substances are in contact with the second
non-conductive contact area, and the ring surfaces are covered with
the anti-dissociation substances.
Inventors: |
Shih; Cheng-Hung; (Changhua
County, TW) ; Lin; Shu-Chen; (Pingtung County,
TW) ; Lin; Cheng-Fan; (Hsinchu County, TW) ;
Hsieh; Yung-Wei; (Hsinchu City, TW) ; Jiang;
Bo-Shiun; (Taipei City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Shih; Cheng-Hung
Lin; Shu-Chen
Lin; Cheng-Fan
Hsieh; Yung-Wei
Jiang; Bo-Shiun |
Changhua County
Pingtung County
Hsinchu County
Hsinchu City
Taipei City |
|
TW
TW
TW
TW
TW |
|
|
Assignee: |
CHIPBOND TECHNOLOGY
CORPORATION
Hsinchu
TW
|
Family ID: |
48808662 |
Appl. No.: |
13/398081 |
Filed: |
February 16, 2012 |
Current U.S.
Class: |
257/737 ;
257/E21.509; 257/E23.023; 438/106 |
Current CPC
Class: |
H01L 24/13 20130101;
H01L 24/29 20130101; H01L 2224/29393 20130101; H01L 2224/83192
20130101; H01L 21/50 20130101; H01L 2224/81191 20130101; H01L
2224/81903 20130101; H01L 2224/29393 20130101; H01L 2224/2929
20130101; H01L 2224/293 20130101; H01L 2224/13144 20130101; H01L
24/16 20130101; H01L 2224/13155 20130101; H01L 2224/9211 20130101;
H01L 2224/13155 20130101; H01L 2224/16225 20130101; H01L 2224/13144
20130101; H01L 2224/29499 20130101; H01L 2224/73204 20130101; H01L
2224/73204 20130101; H01L 24/32 20130101; H01L 2924/00 20130101;
H01L 2924/00 20130101; H01L 2224/83192 20130101; H01L 24/92
20130101; H01L 24/81 20130101; H01L 2224/32225 20130101; H01L
2224/2929 20130101; H01L 2224/13147 20130101; H01L 2224/83851
20130101; H01L 24/83 20130101; H01L 2224/9211 20130101; H01L
2224/13147 20130101; H01L 2224/83192 20130101; H01L 2224/293
20130101; H01L 2224/81 20130101; H01L 2924/00014 20130101; H01L
2224/16225 20130101; H01L 2224/32225 20130101; H01L 2224/16225
20130101; H01L 2924/00012 20130101; H01L 2224/32225 20130101; H01L
2224/32225 20130101; H01L 2924/00014 20130101; H01L 2224/73204
20130101; H01L 2924/00014 20130101; H01L 2924/00014 20130101; H01L
2924/00012 20130101; H01L 2924/00014 20130101; H01L 2224/83
20130101 |
Class at
Publication: |
257/737 ;
438/106; 257/E21.509; 257/E23.023 |
International
Class: |
H01L 23/488 20060101
H01L023/488; H01L 21/60 20060101 H01L021/60 |
Claims
1. A semiconductor packaging method at least comprising: providing
a substrate having an upper surface and a plurality of pads
disposed on the upper surface, wherein each of the pads comprises a
first coupling surface having a plurality of first conductive
contact areas and a plurality of first non-conductive contact
areas; forming a conductible gel with anti-dissociation function on
the upper surface and the pads of the substrate, wherein the
conductible gel with anti-dissociation function includes a
plurality of conductive particles and a plurality of
anti-dissociation substances; and mounting a chip on the substrate,
the chip comprises an active surface facing toward the upper
surface of the substrate and a plurality of copper-containing bumps
disposed at the active surface, wherein the conductible gel with
anti-dissociation function covers the copper-containing bumps, each
of the copper-containing bumps comprises a second coupling surface
and a ring surface, said second coupling surface comprises a
plurality of second conductive contact areas and a plurality of
second non-conductive contact areas, said copper-containing bumps
are electrically connected with the pads via the conductive
particles located between the first coupling surfaces and the
second coupling surfaces, said conductive particles are
electrically connected with the first conductive contact areas of
the first coupling surfaces and the second conductive contact areas
of the second coupling surfaces, wherein the anti-dissociation
substances are located between adjacent conductive particles, each
of the first coupling surfaces and each of the second coupling
surfaces, said anti-dissociation substances are in contact with the
second non-conductive contact areas of the second coupling
surfaces, and the ring surfaces of the copper-containing bumps are
covered with the anti-dissociation substances.
2. The semiconductor packaging method in accordance with claim 1,
wherein the anti-dissociation substances are in contact with the
first non-conductive contact areas of the first coupling
surfaces.
3. The semiconductor packaging method in accordance with claim 1,
wherein each of the pads comprises a lateral surface being covered
with the anti-dissociation substances.
4. The semiconductor packaging method in accordance with claim 1,
wherein the anti-dissociation substance can be an organic
solderability preservative.
5. The semiconductor packaging method in accordance with claim 4,
wherein the material of the organic solderability preservative can
be chosen from one of benzimidazole or imidazole derivative.
6. The semiconductor packaging method in accordance with claim 5,
wherein the imidazole derivative can be one of Brenzotriazole,
Phenylimidazole, Substituted Benzimidazole, Aryl Phonylimidazole or
a mixture thereof, and the benzimidazole can be one of
Brenzotriazole, Phenylimidazole, Substituted Benzimidazole, Aryl
Phonylimidazole or a mixture thereof.
7. The semiconductor packaging method in accordance with claim 1,
wherein the material of the copper-containing bumps can be chosen
from one of copper/nickel or copper/nickel/gold.
8. A semiconductor packaging structure at least includes: a
substrate having an upper surface and a plurality of pads disposed
at the upper surface, each of the pads comprises a first coupling
surface having a plurality of first conductive contact areas and a
plurality of first non-conductive contact areas; a conductible gel
with anti-dissociation function formed on the upper surface and the
pads of the substrate, said conductible gel with anti-dissociation
function includes a plurality of conductive particles and a
plurality of anti-dissociation substances; and a chip mounted on
the substrate, said chip comprises an active surface facing toward
the upper surface of the substrate and a plurality of
copper-containing bumps disposed at the active surface, each of the
copper-containing bumps is covered with the conductible gel with
anti-dissociation function and comprises a second coupling surface
and a ring surface, said second coupling surface comprises a
plurality of second conductive contact areas and a plurality of
second non-conductive contact areas, wherein the copper-containing
bumps are electrically connected with the pads via the conductive
particles located between the first coupling surfaces and the
second coupling surfaces, said conductive particles are
electrically connected with the first conductive contact areas of
the first coupling surfaces and the second conductive contact areas
of the second coupling surfaces, wherein the anti-dissociation
substances are located between adjacent conductive particles, each
of the first coupling surfaces and each of the second coupling
surfaces, said anti-dissociation substances are in contact with the
second non-conductive contact areas of the second coupling
surfaces, and the ring surfaces of the copper-containing bumps are
covered with the anti-dissociation substances.
9. The semiconductor packaging structure in accordance with claim
8, wherein the anti-dissociation substances are in contact with the
first non-conductive contact areas of the first coupling
surfaces.
10. The semiconductor packaging structure in accordance with claim
8, wherein each of the pads comprises a lateral surface being
covered with the anti-dissociation substances.
11. The semiconductor packaging structure in accordance with claim
8, wherein the anti-dissociation substance can be an organic
solderability preservative.
12. The semiconductor packaging structure in accordance with claim
11, wherein the material of the organic solderability preservative
can be chosen from one of benzimidazole or imidazole
derivative.
13. The semiconductor packaging structure in accordance with claim
12, wherein the imidazole derivative can be one of Brenzotriazole,
Phenylimidazole, Substituted Benzimidazole, Aryl Phonylimidazole or
a mixture thereof, and the benzimidazole can be one of
Brenzotriazole, Phenylimidazole, Substituted Benzimidazole, Aryl
Phonylimidazole or a mixture thereof.
14. The semiconductor packaging structure in accordance with claim
8, wherein the material of the copper-containing bumps can be
chosen from one of copper/nickel or copper/nickel/gold.
Description
FIELD OF THE INVENTION
[0001] The present invention is generally related to a
semiconductor packaging method, which particularly relates to the
semiconductor packaging method that prevents copper ions from
dissociation.
BACKGROUND OF THE INVENTION
[0002] Modern electronic products gradually lead a direction of
light, thin, short, and small. Accordingly, the circuit layout for
electronic products destines to develop technique such as "micro
space between two electronic connection devices". However, a short
phenomenon is easily occurred in mentioned circuit layout via an
insufficient gap between two adjacent electronic connection
devices.
SUMMARY
[0003] The primary object of the present invention is to provide a
semiconductor packaging method includes providing a substrate
having an upper surface and a plurality of pads disposed at the
upper surface, and each of the pads comprises a first coupling
surface having a plurality of first conductive contact areas and a
plurality of first non-conductive contact areas; forming a
conductible gel with anti-dissociation function on the upper
surface and the pads of the substrate, wherein the conductible gel
with anti-dissociation function includes a plurality of conductive
particles and a plurality of anti-dissociation substances; mounting
a chip on the substrate, the chip comprises an active surface
facing toward the upper surface of the substrate and a plurality of
copper-containing bumps disposed at the active surface, wherein the
conductible gel with anti-dissociation function covers the
copper-containing bumps, each of the copper-containing bumps
comprises a second coupling surface and a ring surface, said second
coupling surface comprises a plurality of second conductive contact
areas and a plurality of second non-conductive contact areas, said
copper-containing bumps are electrically connected with the pads
via the conductive particles located between the first coupling
surfaces and the second coupling surfaces, said conductive
particles are electrically connected with the first conductive
contact areas of the first coupling surfaces and the second
conductive contact areas of the second coupling surfaces, wherein
the anti-dissociation substances are located between adjacent
conductive particles, each of the first coupling surfaces and each
of the second coupling surfaces, said anti-dissociation substances
are in contact with the second non-conductive contact areas of the
second coupling surfaces, and the ring surfaces of the
copper-containing bumps are covered with the anti-dissociation
substances. As a result of the ring surfaces of the
copper-containing bumps being covered by the anti-dissociation
substances of the conductible gel with anti-dissociation function,
when a dissociation phenomenon via copper ions from the
copper-containing bumps is occurred, the anti-dissociation
substances may capture those dissociated copper ions to avoid short
phenomenon from happening.
DESCRIPTION OF THE DRAWINGS
[0004] FIGS. 1A to 1C are section schematic diagrams illustrating a
semiconductor packaging method in accordance with a preferred
embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0005] With reference to FIGS. 1A to 1C, a semiconductor packaging
method in accordance with a preferred embodiment of the present
invention includes the steps as followed. First, referring to FIG.
1A, providing a substrate 110 having an upper surface 111 and a
plurality of pads 112 disposed at the upper surface 111, in this
embodiment, the pad 112 can be a pin of the substrate 110 or a bump
pad of trace lines. Each of the pads 112 comprises a first coupling
surface 113 and a lateral surface 114, wherein the first coupling
surface 113 comprises a plurality of first conductive contact areas
113a and a plurality of first non-conductive contact areas 113b.
Next, referring to FIG. 1B, FIG. 1B indicates forming a conductible
gel with anti-dissociation function 120 on the upper surface 111
and the pads 112 of the substrate 110, wherein the conductible gel
with anti-dissociation function 120 includes a plurality of
conductive particles 121 and a plurality of anti-dissociation
substances 122. In this embodiment, the anti-dissociation substance
122 can be an organic solderability preservative, wherein the
material of the organic solderability preservative can be chosen
from one of benzimidazole or imidazole derivative. Furthermore, the
imidazole derivative can be one of Brenzotriazole, Phenylimidazole,
Substituted Benzimidazole, Aryl Phonylimidazole or a mixture
thereof, and the benzimidazole can be one of Brenzotriazole,
Phenylimidazole, Substituted Benzimidazole, Aryl Phonylimidazole or
a mixture thereof.
[0006] Finally, referring to FIG. 1C, mounting a chip 130 on the
substrate 110, said chip 130 comprises an active surface 131 facing
toward the upper surface 111 of the substrate 110 and a plurality
of copper-containing bumps 132 disposed at the active surface 131.
In this embodiment, the material of the copper-containing bumps 132
can be chosen from one of copper/nickel or copper/nickel/gold. The
conductible gel with anti-dissociation function 120 covers the
copper-containing bumps 132, each of the copper-containing bumps
132 comprises a second coupling surface 133 and a ring surface 134,
wherein the second coupling surface 133 comprises a plurality of
second conductive contact areas 133a and a plurality of second
non-conductive contact areas 133b. The copper-containing bumps 132
are electrically connected with the pads 112 via the conductive
particles 121 located between the first coupling surfaces 113 and
the second coupling surfaces 133. The conductive particles 121 are
electrically connected with the first conductive contact areas 113a
of the first coupling surfaces 113 and the second conductive
contact areas 133a of the second coupling surfaces 133. The
anti-dissociation substances 122 are located between adjacent
conductive particles 121, each of the first coupling surfaces 113
and each of the second coupling surfaces 133. The anti-dissociation
substances 122 are in contact with the second non-conductive
contact areas 133b of the second coupling surfaces 133, and the
ring surfaces 134 of the copper-containing bumps 132 are covered
with the anti-dissociation substances 122 therefore forming a
semiconductor packaging structure 100. Besides, the
anti-dissociation substances 122 are in contact with the first
non-conductive contact areas 113b of the first coupling surfaces
113 as well. As a result of the ring surfaces 134 of the
copper-containing bumps 132 being covered by the anti-dissociation
substances 122 of the conductible gel with anti-dissociation
function 120, when a dissociation phenomenon via copper ions from
the copper-containing bumps 132 is occurred, the anti-dissociation
substances 122 may capture those dissociated copper ions in time to
avoid short phenomenon from happening and to improve manufacturing
yield of the semiconductor packaging structure 100.
[0007] With reference to FIG. 1C again, a semiconductor packaging
structure 100 in accordance with a preferred embodiment of this
invention includes a substrate 110, a conductible gel with
anti-dissociation function 120 and a chip 130. The substrate 110
comprises an upper surface 111 and a plurality of pads 112 disposed
at the upper surface 111, wherein each of the pads 112 comprises a
first coupling surface 113 and a lateral surface 114. The first
coupling surface 113 comprises a plurality of first conductive
contact areas 113a and a plurality of first non-conductive contact
areas 113b. The conductible gel with anti-dissociation function 120
is formed on the upper surface 111 and the pads 112 of the
substrate 110, and said conductible gel with anti-dissociation
function 120 includes a plurality of conductive particles 121 and a
plurality of anti-dissociation substances 122. The chip 130 is
mounted on the substrate 110 and comprises an active surface 131
facing toward the upper surface 111 of the substrate 110 and a
plurality of copper-containing bumps 132 disposed at the active
surface 131. Each of the copper-containing bumps 132 is covered
with the conductible gel with anti-dissociation function 120 and
comprises a second coupling surface 133 and a ring surface 134,
wherein the second coupling surface 133 comprises a plurality of
second conductive contact areas 133a and a plurality of second
non-conductive contact areas 133b. The copper-containing bumps 132
are electrically connected with the pads 112 via the conductive
particles 121 located between the first coupling surfaces 113 and
the second coupling surfaces 133. Besides, the conductive particles
121 are electrically connected with the first conductive contact
areas 113a of the first coupling surfaces 113 and the second
conductive contact areas 133a of the second coupling surfaces 133,
wherein the anti-dissociation substances 122 are located between
adjacent conductive particles 121, each of the first coupling
surfaces 113 and each of the second coupling surfaces 133. The
anti-dissociation substances 122 are in contact with the second
non-conductive contact areas 133b of the second coupling surfaces
133 and the first non-conductive contact areas 113b of the first
coupling surfaces 113. The anti-dissociation substances 122 cover
the ring surfaces 134 of the copper-containing bumps 132 and the
lateral surfaces 114 of the pads 112.
[0008] While this invention has been particularly illustrated and
described in detail with respect to the preferred embodiments
thereof, it will be clearly understood by those skilled in the art
that it is not limited to the specific features and describes and
various modifications and changes in form and details may be made
without departing from the spirit and scope of this invention.
* * * * *