U.S. patent application number 13/135763 was filed with the patent office on 2011-11-10 for surface cleaning and texturing process for crystalline solar cells.
Invention is credited to Tristan R. Holtam, Rohit Mishra, Hari Ponnekanti, Michael P. Stewart, Timothy Weidman, Kapila Wijekoon.
Application Number | 20110272625 13/135763 |
Document ID | / |
Family ID | 41114618 |
Filed Date | 2011-11-10 |
United States Patent
Application |
20110272625 |
Kind Code |
A1 |
Wijekoon; Kapila ; et
al. |
November 10, 2011 |
Surface cleaning and texturing process for crystalline solar
cells
Abstract
Methods for surface texturing a crystalline silicon substrate
are provided. In one embodiment, the method includes providing a
crystalline silicon substrate, wetting the substrate with an
alkaline solution comprising a wetting agent, and forming a
textured surface with a structure having a depth about 1 .mu.m to
about 10 .mu.m on the substrate. In another embodiment, a method of
performing a substrate texture process includes providing
crystalline silicon substrate, pre-cleaning the substrate in a HF
aqueous solution, wetting the substrate with a KOH aqueous solution
comprising polyethylene glycol (PEG) compound, and forming a
textured surface with a structure having a depth about 3 .mu.m to
about 8 .mu.m on the substrate.
Inventors: |
Wijekoon; Kapila; (Palo
Alto, CA) ; Mishra; Rohit; (Santa Clara, CA) ;
Stewart; Michael P.; (Mountain View, CA) ; Weidman;
Timothy; (Sunnyvale, CA) ; Ponnekanti; Hari;
(San Jose, CA) ; Holtam; Tristan R.; (Saratoga,
CA) |
Family ID: |
41114618 |
Appl. No.: |
13/135763 |
Filed: |
July 13, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12383350 |
Mar 23, 2009 |
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13135763 |
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61039384 |
Mar 25, 2008 |
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61148322 |
Jan 29, 2009 |
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61157179 |
Mar 3, 2009 |
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Current U.S.
Class: |
252/79.5 ;
252/79.1 |
Current CPC
Class: |
H01L 31/075 20130101;
H01L 31/077 20130101; Y02E 10/548 20130101; Y02E 10/544 20130101;
H01L 31/028 20130101; H01L 31/02363 20130101; H01L 31/0687
20130101; H01L 31/0392 20130101; H01L 21/30608 20130101; Y02E
10/547 20130101 |
Class at
Publication: |
252/79.5 ;
252/79.1 |
International
Class: |
C09K 13/02 20060101
C09K013/02; C09K 13/00 20060101 C09K013/00 |
Claims
1. An etching solution for forming a texture on a solar cell
substrate, comprising: an alkaline solution comprising an etching
additive that comprises a phenol or a derivative thereof.
2. The etching solution of claim 1, wherein the phenol or the
derivative thereof comprises poly(4-vinyl phenol), brominated
poly(4-vinyl phenol), polystyrine sulphonic acid, Joncryl.RTM.
polymers or derivatives thereof.
3. The etching solution of claim 1, wherein the phenol or the
derivative thereof comprises an ortho-cresol, a meta-cresol, a
para-cresol, a poly(cresol) or derivatives thereof.
4. The etching solution of claim 1, wherein the phenol or the
derivative thereof comprises poly(4-vinyl phenol) or derivatives
thereof.
5. The etching solution of claim 1, further comprising: a wetting
agent that is selected from a group consisting of polyethylene
glycol (PEG), sodium dodecyl sulfate (SDS), polypropylene glycol
(PPG), copolymer of polyethylene glycol (PEG) and polypropylene
glycol (PPG).
6. The etching solution of claim 1, wherein the alkaline solution
further comprises an isopropyl alcohol free aqueous solution.
7. The etching solution of claim 6, wherein the alkaline solution
further comprises potassium hydroxide, sodium hydroxide, aqueous
ammonia or tetramethylammonium hydroxide.
8. An etching solution for forming a texture on a silicon
containing solar cell substrate, comprising: an alkaline solution
comprising a wetting agent that comprises a polyether or a
non-ionic surfactant, and an etching additive that comprises a
phenol or a derivative thereof.
9. The etching solution of claim 8, wherein the wetting agent
further comprises polyethylene glycol (PEG), sodium dodecyl sulfate
(SDS), polypropylene glycol (PPG), copolymer of polyethylene glycol
(PEG) or polypropylene glycol (PPG), and the etching additive
further comprises poly(4-vinylphenol) (PVP), brominated
poly(4-vinyl phenol), polystyrine sulphonic acid (PSSA),
Joncryl.RTM. polymers, phenol, ortho-cresol, meta-cresol,
para-cresol or poly(cresol).
10. The etching solution of claim 8, wherein the wetting agent
comprises polyethylene glycol that has a molecular weight between
about 20 and about 50,000.
11. The etching solution of claim 8, wherein the alkaline solution
further comprises an isopropyl alcohol free aqueous solution.
12. The etching solution of claim 11, wherein the alkaline solution
further comprises potassium hydroxide, sodium hydroxide, aqueous
ammonia or tetramethylammonium hydroxide.
13. An etching solution for forming a texture on a silicon
containing solar cell substrate, comprising: an alkaline solution
comprising: a polyethylene glycol (PEG) compound having a molecular
weight between about 200 and about 8000, wherein the concentration
of the polyethylene glycol (PEG) compound in the alkaline solution
is between about 50 ppm and about 20,000 ppm; and an etching
additive that comprises a phenol or a derivative thereof.
14. The etching solution of claim 13, wherein the etching additive
comprises poly(4-vinyl phenol) or derivatives thereof in a
concentration of between about 50 and about 4,000 ppm.
15. The etching solution of claim 13, wherein the alkaline solution
further comprises potassium hydroxide, sodium hydroxide, aqueous
ammonia or tetramethylammonium hydroxide.
16. An etching solution for forming a texture on a silicon
containing solar cell substrate, comprising: an alkaline solution
comprising a poly(4-vinyl phenol) or derivatives thereof, in a
concentration of between about 50 and about 4,000 ppm.
17. The etching solution of claim 16, wherein the alkaline solution
further comprises an isopropyl alcohol free aqueous solution.
18. An etching solution for forming a texture on a silicon
containing solar cell substrate, comprising: an alkaline solution
comprising: a polycresol or derivatives thereof; and a chemical
selected from a group consisting of potassium hydroxide, sodium
hydroxide, aqueous ammonia and tetramethylammonium hydroxide.
19. The etching solution of claim 18, wherein the alkaline solution
further comprises an isopropyl alcohol free aqueous solution.
20. An etching solution for forming a texture on a crystalline
solar cell substrate, comprising: a potassium hydroxide in a
concentration of between about 1 and about 15 percent by weight; a
polyethylene glycol (PEG) compound having a molecular weight
between about 200 and about 8000, wherein the concentration of the
polyethylene glycol (PEG) compound in the etching solution is
between about 200 ppm and about 500 ppm; and an etching additive
that comprises a poly(4-vinyl phenol), a polycresol or derivatives
thereof.
21. The etching solution of claim 20, wherein the alkaline solution
further comprises an isopropyl alcohol free aqueous solution.
22. The etching solution of claim 20, wherein the concentration of
the poly(4-vinyl phenol) or derivatives thereof is between about 50
and about 4,000 ppm.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of co-pending U.S. patent
application Ser. No. 12/383,350, filed Mar. 23, 2009, which claims
benefit of U.S. Provisional Patent Application Ser. No. 61/039,384,
filed Mar. 25, 2008 (Attorney Docket No. APPM/013323L), U.S.
Provisional Patent Application Ser. No. 61/148,322, filed Jan. 29,
2009 (Attorney Docket No. APPM/13323L02) and U.S. Provisional
Patent Application Ser. No. 61/157,179, filed Mar. 3, 2009
(Attorney Docket No. APPM/14258L), which are all incorporated by
reference in their entireties.
BACKGROUND OF THE DISCLOSURE
[0002] 1. Field of the Invention
[0003] The present invention relates to fabrication of photovoltaic
cells, more specifically, a surface texture process for fabrication
of photovoltaic cells.
[0004] 2. Description of the Background Art
[0005] Solar cells are photovoltaic devices that convert sunlight
directly into electrical power. PV or solar cells typically have
one or more p-n junctions. Each junction comprises two different
regions within a semiconductor material where one side is denoted
as the p-type region and the other as the n-type region. When the
p-n junction of the PV cell is exposed to sunlight (consisting of
energy from photons), the sunlight is directly converted to
electricity through the PV effect. PV solar cells generate a
specific amount of electric power and cells are tiled into modules
sized to deliver the desired amount of system power. PV modules are
joined into panels with specific frames and connectors.
[0006] The solar cells are commonly formed on a silicon substrate,
which may be in form of single or multicrystalline silicon
substrates. In practice, it is desired that incident light
transmitted into the solar cell efficient converts as such as the
optical energy to electrical energy as possible. However, since
sunlight may be scattered, refracted, diffracted, or reflected
during transmission, there is insufficient light flux for direct
conversion to be cost effective.
[0007] Accordingly, several different techniques have been
developed to enhance light trapping in the solar cells to improve
conversion efficiency. For example, different coatings may be
applied to the substrate surface to minimize surface reflectance,
thereby allowing a higher percentage of incident light to enter in
the solar cells, as opposed to being reflecting away from the solar
cell. Alternatively, a surface texture may be provided to increase
the surface roughness, thereby assisting the light to be trapped
and confined in the solar cell. Conventional surface texturing
process often utilizes alcohol related compounds as a chemical
source for substrate surface treatment. However, alcohol related
compounds are flammable, which are fire hazard and be in
environmental safety concern, thereby requiring special safety
measures during processing. Also, alcohols evaporate at the
temperatures needed to assure that the chemical activity of the
etchants in the texturing solution is in an optimum range to
effectively perform the texturing process. Evaporation of the
alcohol components from the texturing bath thus leads to an
unstable texturing bath composition when the processes are run at
these elevated temperatures.
[0008] Therefore, there is a need for an improved surface texture
process for solar cell fabrication process.
SUMMARY OF THE INVENTION
[0009] One embodiment of the present invention sets forth a method
of roughening a surface of solar cell substrate, comprising
roughening a surface of a crystalline silicon substrate by
immersing the crystalline silicon substrate for a period of time in
an alkaline solution comprising a surface modification additive,
wherein the formed roughness has an average depth between about 1
.mu.m to about 10 .mu.m.
[0010] Embodiments of the invention may further provide a method of
roughening a surface of solar cell substrate, comprising immersing
a crystalline silicon substrate in a first pre-clean solution
comprising hydrofluoric acid, forming a texture on a surface of a
crystalline silicon substrate by immersing the crystalline silicon
substrate in an alkaline solution comprising a surface modification
additive, measuring the average depth of the formed texture on the
surface, and immersing the textured surface of the substrate in a
post-clean solution comprising hydrofluoric acid and hydrochloric
acid.
[0011] Embodiments of the invention may further provide a method of
performing a substrate texturing process, comprising pre-cleaning
an n-type crystalline silicon substrate in a solution comprising
hydrofluoric acid, wetting the n-type crystalline silicon substrate
with an etching solution comprising potassium hydroxide and
polyethylene glycol for a period of time to form a texture on a
surface of the n-type crystalline silicon substrate, wherein the
average depth of the formed texture is between about 3 .mu.m to
about 8 .mu.m, and immersing the textured surface of the substrate
in a post-clean solution comprising hydrofluoric acid and
hydrochloric acid.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] So that the manner in which the above recited features of
the present invention are attained and can be understood in detail,
a more particular description of the invention, briefly summarized
above, may be had by reference to the embodiments thereof which are
illustrated in the appended drawings. The patent or application
file contains at least one drawing executed in color. Copies of
this patent or patent application publication with color drawing(s)
will be provided by the Office upon request and payment of the
necessary fee.
[0013] FIG. 1A depicts a process flow diagram of a surface
texturing process performed on a silicon substrate in accordance
with one embodiment of the invention;
[0014] FIG. 1B depicts a process flow diagram of a surface
texturing process performed on a silicon substrate in accordance
with one embodiment of the invention;
[0015] FIGS. 2A-2B depicts cross-sectional views of a portion of a
substrate corresponding to various stages of the process of FIGS.
1A and/or 1B;
[0016] FIG. 3A depicts a cross-sectional view of a silicon
substrate having a textured surface that may be utilized to form
crystalline solar cells accordance with one embodiment of the
invention;
[0017] FIG. 3B depicts a cross-sectional view of a solar cell
having a textured surface accordance with one embodiment of the
invention; and
[0018] FIG. 4 depicts a comparison of reflectance curves of
substrate surfaces before and after the surface texture
process;
[0019] FIGS. 5A-5D include four SEM pictures that illustrates the
difference in surface roughness that can achieved using etching
chemistries that either contain or do not contain the one or more
surface modification additives in accordance with one embodiment of
the invention;
[0020] FIG. 6 is a plan view of a solar cell processing line
according with one embodiment of the invention.
[0021] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
and features of one embodiment may be beneficially incorporated in
other embodiments without further recitation.
[0022] It is to be noted, however, that the appended drawings
illustrate only exemplary embodiments of this invention and are
therefore not to be considered limiting of its scope, for the
invention may admit to other equally effective embodiments.
DETAILED DESCRIPTION
[0023] The present invention provides a method of texturing a
surface of a silicon substrate that may be utilized to form solar
cell device. In one embodiment, the silicon substrate is a
monocrystalline, or single crystal, substrate. In one embodiment,
the substrate surface may be wetted with an alkaline solution
having a wetting agent added therein. The reactive species in the
alkaline solution etches the substrate surface, forming a desired
surface texture on the substrate surface, thereby promoting optical
absorption of the incident light.
[0024] FIG. 1A depicts a flow diagram of one embodiment of a
surface texturing process sequence 100 suitable for performing on a
silicon substrate. FIG. 1B depicts a flow diagram of one embodiment
of the surface texturing process sequence 100 that has a number of
sub-processing steps preformed during one or more of the steps
103-106. FIGS. 2A-2B are schematic cross-sectional views of a
portion of a substrate corresponding to various stages of the
process sequence 100. Although the process sequence 100 is
illustrated for solar cell manufacturing process, the process
sequence 100 may be beneficially utilized to form textured surfaces
suitable for other structures and application. In one embodiment,
the process sequence 100 discussed below is performed in an
automated production line 600 (FIG. 6) that has a robotic device
that is adapted to transfer each of the processed substrates to a
series of chemical baths that are adapted to perform all of the
processing steps discussed below. While not shown in FIGS. 1A-1B,
in some embodiments of the process sequence 100, a rinsing step is
performed between each of the processing steps discussed below to
prevent over exposure to the processing chemistry during each step
and reduce the chance of cross-contamination between adjacent
processing baths.
[0025] The process sequence 100 begins at step 102 by providing a
silicon substrate 200 having an upper surface 204 and a bottom
surface 206, as depicted in FIG. 2A. The substrate 200 may have a
thickness 202 between about 100 .mu.m and about 400 .mu.m. In one
embodiment, the substrate 200 may be a monocrystalline substrate
(e.g., Si<100> or Si<111>), a microcrystalline silicon
substrate, polycrystalline silicon substrate, a strained silicon
substrate, an amorphous silicon substrate, a doped or undoped
polysilicon substrate, glass, sapphire and any types of silicon
containing substrate. In the embodiment wherein the substrate 200
is desired to be an n-type crystalline silicon substrate, donor
type atoms are doped within the crystalline silicon substrate
during the substrate formation process. Suitable examples of donor
atoms include, but not limited to, phosphorus (P), arsenic (As),
antimony (Sb). Alternatively, in the embodiment wherein a p-type
crystalline silicon substrate is desired, acceptor type atoms may
be doped into the crystalline silicon substrate during the
substrate formation process. In the embodiment depicted in FIG.
2A-B, the silicon substrate 200 is an n-type crystalline silicon
substrate. While the disclosure herein, generally, discusses the
use of an n-type substrate this configuration is not intended to be
limiting as to the scope of the invention since a p-type
crystalline silicon substrate could also be used.
[0026] At step 103, the substrate 200 is optionally pre-cleaned
prior to performing the texturization process (e.g., step 104). In
one embodiment, the pre-clean process is a multi-step process that
is used to remove unwanted contamination, surface damage and/or
other materials that could affect the subsequent processing steps.
In one embodiment, or step 103A, the pre-clean process may be
performed by wetting the substrate with an acid solution and/or
solvent to remove surface particles, native oxide or other
contaminants from the substrate. Wetting may be accomplished by
spraying, flooding, immersing of other suitable technique. The
pre-clean solution may be a hydrogen fluoride (HF) aqueous solution
having a mixture of hydrogen fluoride and deionized water at a
ratio between about 0.1:100 to about 4:100. In one embodiment
depicted herein, the pre-clean solution is a hydrogen fluoride (HF)
aqueous solution having a concentration between about 0.1 weight
percent and about 4 weight percent, such as between about 1 weight
percent and about 2 weight percent to deionized water. The
pre-clean process may be performed on the substrate between about 5
seconds and about 600 seconds, such as about 30 seconds to about
240 second, for example about 120 seconds. The pre-clean solution
may also be an SC1 cleaning solution, an SC2 cleaning solution, or
other suitable and cost effective cleaning solution may be used to
clean a silicon containing substrate. In one example, the pre-clean
process includes immersing the substrate in a solution comprising
2% by volume hydrofluoric acid (HF), at room temperature for a time
between about 2 minutes. In another example, the pre-clean process
includes immersing the substrate in a HN type solution comprising
3% by volume nitric acid (HNO.sub.3) and 5% by volume hydrofluoric
acid (HF), at room temperature for a time between about 2 and about
10 minutes. In one example, a 10 minute etch process using the HN
solution (or HN10 bath) was used to remove gross amounts of wafer
sawing contamination prior to performing the saw damage etch
removal process and texturization process (step 104). By use of the
HN10 cleaning process a large reduction in Cr, Cu, Fe, and Ni
contamination was found as compared to sawed and water rinsed
substrates (see Table 1 below). During this bath treatment the HN10
bath will consume approximately 1.5 .mu.m of silicon from each side
of the substrate and can be re-used several times without
degradation of its etching properties. The surfaces of the
substrates emerging from the HN10 bath will generally be
hydrophobic, thus making rinsing and drying easier to perform.
After performing the HN10 cleaning process the substrate is
typically rinsed in a mixture of 0.5% isopropyl alcohol (IPA) and
DI water.
[0027] In one embodiment of the pre-clean process, a saw damage
etch process (step 103B) is performed to remove any physical damage
created by the previous sawing process. In one embodiment, the saw
damage etch process step 103B is performed after performing an acid
etching step 103A, such as the HN10 process discussed above, and
before performing step 104. In one embodiment, the saw damage etch
process includes etching the substrate in a saw damage etch bath
comprising between about 20% and 45% by volume of potassium
hydroxide (KOH) and the balance DI water. In one example, the saw
damage etch process includes etching the substrate for about 22
minutes in a saw damage etch bath consisting of 20 vol. % of KOH
maintained at 70.degree. C., which removes approximately 20 .mu.m
of Si from each side of the substrate (1 .mu.m/min). After
performing the saw damage etch process the substrate is typically
rinsed in warm DI water. In another example, the saw damage etch
process includes etching the substrate for about 45 seconds in a
saw damage etch bath consisting of 45 vol. % of KOH maintained at
65.degree. C.
[0028] At step 104, the substrate 200 is wetted by an etching
solution to roughen, or texture, a surface of the substrate. The
substrate 200 may be wetted by flooding, spraying, immersion, or
other suitable manner. In one embodiment, the etching solution is
an alkaline solution having one or more surface modification
additives that are added therein that is maintained at a
temperature between about 65.degree. C. and about 95.degree. C. In
some cases, agitation of the etching solution is needed to assure
that it is always in intimate contact with the surface of the
substrate during the etching process. The etching solution will
anisotropically etch the substrate 200, thereby providing a
textured surface 212 of the substrate 200, as depicted in FIG. 2B.
The etching rate toward Si<111> orientation is relatively
slow. As a result, the substrate 200 is etched selectively in the
Si<100> orientation along the Si<111> side, forming
pyramids 214 on the textured surface 212. It is noted that the
etching solution may etch both upper surfaces 204 and bottom
surface 206 of the substrate 200. The textured surface may be
formed on both sides of the substrate 200. The roughness of the
textured surface 212 may be determined by the shape, height,
dimension and depth of the pyramid 214 formed on the textured
surface 212. In general, the average depth is defined as the
average difference between the peak 210 to valley 213, or average
height, as measured over an area or region of the substrate surface
by use of a mechanical profilometer, optical profilometer or other
optical inspection techniques (e.g., confocal microscopy, 3D-SEM
image). In one embodiment, the pyramid 214 has a depth of about
between about 1 .mu.m and about 10 .mu.m, for example, about 3
.mu.m to about 8 .mu.m, such as about 5 .mu.m. In one example, a
pyramid 214 has a height 208 of about 8 .mu.m from the pyramid
apex, or peak 210, to its valley 213.
[0029] In one embodiment, the alkaline solution for etching the
silicon substrate may be an aqueous potassium hydroxide (KOH),
sodium hydroxide (NaOH), aqueous ammonia (NH.sub.4OH),
tetramethylammonium hydroxide (TMAH; or (CH.sub.3).sub.4NOH), or
other similar basic solution. The alkaline solution may have a
concentration between about 1 weight percent and about 15 weight
percent of KOH to a deionized water (DI) water, such as about 3
weight percent.
[0030] In one embodiment, the one or more surface modification
additives that are added to etching solution include a wetting
agent that may be selected from a group of materials, such as
polyethers and/or materials that are anionic surfactants. In one
embodiment, the wetting agent may include, but not limited to,
polyethylene glycol (PEG), sodium dodecyl sulfate (SDS),
polypropylene glycol (PPG), copolymer of polyethylene glycol (PEG),
and polypropylene glycol (PPG), combination thereof, derivatives
thereof, and the like. The wetting agent is selected from a
compound having high boiling point/flash point and high solubility,
thereby preventing the wetting agent from igniting, evaporating or
precipitating during process. Additionally, high solubility of the
wetting agent also prevents the dissolved elements etched away from
the substrate surface from being reattached to the substrate
surface. For example, PEG compound is a hydrophilic non-ionic
polymer that can be dissolved in liquid and has a relatively high
flash point, for example, greater than 170 degree Celsius.
Accordingly, in the embodiment wherein the etching solution is
heated, the high flash point, for example, greater than 50.degree.
C., of the wetting agent added to the solution will not promote
ignition or evaporation, thereby resulting in undesired hazard fire
and environmental safety concern. In one embodiment, it is
desirable to select a wetting agent that is a liquid at room
temperature so that it can be easily removed from the substrate
surfaces after the etching process has been performed by use of a
room temperature rinsing agent, such as DI water. The careful
selection of a desirable etchant material and a desirable wetting
agent can greatly reduce the cost to perform the texturing process,
and thus the production cost of the solar cell device.
[0031] In one embodiment of the etching solution, the one or more
surface modification additives that are added to etching solution
include a wetting agent and an etching additive. In general, the
etching additive is selected so that it will modify the etching
process on the surface of the substrate, such as accelerating or
inhibiting the etch rate across the surface of the substrate to
minimize localized variations in etch rate and improve the
uniformity of the formed texture. In one embodiment, the etching
additive is a phenol based material. In one example, the etching
additive is a material, such as poly(4-vinylphenol) (PVP),
brominated poly(4-vinyl phenol), polystyrene sulfonic acid (PSSA),
Joncryl.RTM. polymers (empirical formula C.sub.3H.sub.4O.sub.2),
phenol (C.sub.6H.sub.5OH), ortho-cresol (o-cresol), meta-cresol
(m-cresol), and para-cresol (p-cresol), poly(cresol), combination
thereof, derivatives thereof, and the like.
[0032] In certain embodiments depicted herein, the etching solution
is an aqueous potassium hydroxide (KOH) solution containing a PEG
compound added into the solution. The PEG compound may have a
molecular weight between about 200 and about 8000, such as about
300 molecular weight (MW). The PEG added to the alkaline solution
may have a concentration between about 20 ppm and about 50000 ppm,
such as between about 50 ppm and about 20000 ppm. In one
embodiment, the alkaline solution may have a PEG concentration
about 4000 ppm.
[0033] In one embodiment, the etching solution is an aqueous
potassium hydroxide (KOH) solution containing a poly(4-vinylphenol)
(PVP) compound added into the solution. The PVP added to the
alkaline solution may have a concentration between about 50 ppm and
about 50000 ppm, such as between about 50 ppm and about 4000
ppm.
[0034] In another embodiment, the etching solution is an aqueous
potassium hydroxide (KOH) solution containing a wetting agent, such
as a PEG compound, and an etching additive, such as
poly(4-vinylphenol) (PVP) compound. In one example, the etching
solution comprises an alkaline solution having a 200 and 8000
molecular weight PEG compound in a concentration between about 20
ppm and about 50000 ppm, and a PPV compound in a concentration
between about 50 ppm and about 50000 ppm. In another example, the
etching solution comprises an alkaline solution having a 200 and
500 molecular weight PEG compound in a concentration between about
20 ppm and about 4000 ppm, and the PPV compound has a concentration
between about 50 ppm and about 4000 ppm.
[0035] During etching, hydrogen gas may be generated in the etching
solution. Addition of the wetting agent may assist hydrogen to be
released, thereby preventing reattaching of hydrogen to the
substrate surface which may prevent substrate surface from being
further etched. In one embodiment, the etching solution is heated
during etching to a temperature between about 65 degree Celsius and
about 95 degree Celsius, such as about 75 degrees Celsius and about
85 degrees Celsius, such as about 80 degrees Celsius. The etching
process may be performed between about 1 minute to about 90
minutes, such as between about 15 minutes and about 60 minutes,
such as about 30 minutes and about 40 minutes. In one example, the
substrate is etched in an etching solution comprising between about
2.7% by volume of potassium hydroxide (KOH) and about 4500 ppm of
300 MW PEG that is maintained at a temperature of about
79-80.degree. C. for about 30 minutes. In another example, the
substrate is etched in an etching solution comprising between about
2-5% by volume of potassium hydroxide (KOH) and about 2000 ppm of
400 MW PEG that is maintained at a temperature of about 80.degree.
C. for about 30 minutes. In another example, the substrate is
etched in an etching solution comprising between about 2-5% by
volume of potassium hydroxide (KOH), about 2000 ppm of 400 MW PEG
and 50 ppm of poly(4-vinylphenol) maintained at a temperature of
about 80.degree. C. for about 30 minutes. In another example, the
substrate is etched in an etching solution comprising between about
2-5% by volume of potassium hydroxide (KOH), between about 50 ppm
and 1000 ppm of poly(4-vinylphenol) maintained at a temperature of
about 80.degree. C. for about 30 minutes.
[0036] Since surface texturization uniformity and surface roughness
results have a large effect on the solar cell electrical
performance, the control and optimization of the processing results
and uniformity across the surface of the substrate is important
factor in the formation of a solar cell device. Embodiment of the
invention described herein generally utilize an alcohol (e.g.,
iso-propylalcohol or IPA) free texturing process to reduce the
processing cost, improve process results, reduce process variation,
and reduce the fire and safety concerns associated with the use of
alcohols. It is believed that the use of a wetting agent and an
etching additive containing texturization process (step 104) can
shorten the processing time by about 50% over conventional
processes, such as processes that typically contain IPA.
[0037] Also, it has been found that the texturization chemistries
described herein will generally provide a larger number of smaller
random pyramids per unit area on a single crystal (e.g., CZ type)
solar substrate, while providing the same reflectance results as a
conventionally textured substrate. The increased number of smaller
formed pyramids is an advantage since the variation in pyramid size
and density variation of the pyramids is greatly reduced over
conventionally formed textures. FIGS. 5A-5D include four SEM
pictures that illustrate an example of the difference in surface
roughness, or texture, that can achieved using an etching chemistry
that contains or does not contain the one or more surface
modification additives. The results illustrated in FIGS. 5A-5D were
performed on n-type CZ substrates that had been similarly processed
except that the etching time for the non-additive containing
solution was 40 minutes (FIGS. 5A-5B) and the etching time for the
additive containing solution was 22 minutes (FIGS. 5C-5D), while
the measured reflectance was the same for these samples. FIGS. 5A
(isometric view) and 5B (top view) illustrate the surface texture
formed on an n-type CZ substrate using a chemistry that did not
contain the one or more surface modification additives. FIGS. 5C
(isometric view) and 5D (top view) illustrate the surface texture
formed on an n-type CZ substrate when 4500 ppm of a 300 MW PEG
material was added to the chemistry in the etching bath. Comparing
FIGS. 5A and 5C, and FIGS. 5B and 5D, one skilled in the art will
appreciate the decrease in texture height 208 (FIG. 2B), reduction
in texture size variation, and the increase in number of smaller
pyramids found due to the addition of the one or more surface
modification additives.
[0038] The processes and chemistries described herein also
generally provide a "streak free" surface by reducing the chemical
activity variation across the surface of the substrate, which is
believed to be due to the addition of wetting agent and etching
additives and use of an alcohol free chemistry. Streaks on the
solar cell surface can affect the reflectance uniformity across the
substrate surface, and affect the properties of a subsequently
deposited film layers, such as passivation layers (e.g., SiN,
SiO.sub.x, SiON)), across the textured substrate surface.
[0039] Finally, it has been found that the use of texturization
chemisties containing the wetting agents, as described herein, also
generally promote the uniform initiation of the texturing process
thus providing a more uniform texture across the substrate
surface.
[0040] After surface texturing process is completed, a water rinse
process or a drying process may be performed to remove the etching
solution from the substrate surface. The drying process may include
drying the substrate with a flow nitrogen gas, or a flow of clean
dry air. After the surface texture process (step 104) is performed
on the substrate surface, the substrate reflectance is decreased
about 40 percent to 60 percent. In one embodiment, as depicted in
FIG. 3A, after the surface texture process has been performed, one
or more layer 302, such as amorphous and/or crystalline silicon
layers, may be sequentially deposited on top of the textured
surface 212 of the substrate 200, as show by phantom arrow 304. In
one embodiment, the substrate 200 is an n-type, or p-type,
crystalline silicon substrate and the one or more layers 302 are
deposited to form part of the p-n junction of the solar cell
device. In another embodiment, after the surface texture process
has been performed, one or more passivation layers, such as
layer(s) 302, are sequentially deposited on top of the textured
surface 212 of the substrate 200.
[0041] FIG. 3B schematically depict one embodiment of a silicon
solar cell 300 fabricated on a solar cell substrate 200 having a
textured surface 212. The substrate 200 includes a p-type base
region 321, an n-type emitter region 322, and a p-n junction region
323 disposed therebetween. An n-type region, or n-type
semiconductor, is formed by doping the deposited semiconductor
layer with certain types of elements (e.g., phosphorus (P), arsenic
(As), or antimony (Sb)) in order to increase the number of negative
charge carriers, i.e., electrons. In one configuration, the n-type
emitter region 322 is formed by use of an amorphous,
microcrystalline or polycrystalline silicon CVD deposition process
that contains a dopant containing gas (e.g., layer(s) 302). In one
embodiment, a thin intrinsic type layer may be formed between the
p-type base region 321 and the n-type emitter region 322, to form a
heterojunction type solar cell. In a formed solar cell 300, the
electrical current generated when light strikes the front surface
320 flows through metal front contacts 308 and the metal backside
contact 325 of the solar cell 300. The front contacts 308 are
generally configured as widely-spaced thin metal lines, or fingers,
that supply current to larger bus bars transversely oriented to the
fingers. The back contact 306 is generally not constrained to be
formed in multiple thin metal lines, since it does not prevent
incident light from striking the solar cell 300. The solar cell 300
may be covered with a thin layer of dielectric material, such as
silicon nitride (Si.sub.3N.sub.4) or silicon nitride hydride
(Si.sub.xN.sub.y:H), to act as an anti-reflection coating layer
311, or ARC layer 311, that minimizes light reflection from the top
surface of the solar cell 300. The solar cell device configurations
illustrated in FIG. 3B is not intended to be limiting as to the
scope of the invention since other substrate and solar device
region configurations can be metallized using the methods and
apparatuses described herein without deviating from the basic scope
of the invention. It is contemplated that the textured substrate
200 may be formed to facilitate the formation many different types
of solar cell devices, such as heterojunction type cells, point
contact type cells, tunnel junction solar cells, or other similar
devices. An example of formed solar cell devices that can benefit
from the processes described herein are further described in the
commonly assigned U.S. Provisional Patent Application Ser. No.
61/048,001 [Atty. Dkt No. 13438L], filed Jul. 16, 2008, U.S.
Provisional Patent Application Ser. No. 61/139,423 [Atty. Dkt No.
13437L03], filed Dec. 19, 2008, and U.S. Provisional Patent
Application Ser. No. 61/043,664 [Atty. Dkt No. 13306L], filed Apr.
9, 2008, which are all incorporated by reference in their
entirety.
[0042] In one embodiment of the process sequence 100, after
performing step 104, a post etch texture smoothing process, or step
105, may optionally be performed. In one embodiment, the post etch
texture smoothing process may be performed by wetting the substrate
with a smoothing etch solution that is used to round or soften the
edges of the texture formed in step 104 before one or more layers
are deposited on the textured surface. The texture smoothing
process is thus used to prevent the cracking and other types of
mechanical failure in the subsequently deposited layers, such as a
passivation layer or junction forming layer, by smoothing the sharp
edges and points of the formed texture. Cracking or mechanical
failure of the deposited films is believed to be due to the
intrinsic or extrinsic stress found in the deposited film(s). The
texture smoothing process is generally designed so that it will not
removing enough material from the textured surface to significantly
affect its reflectance measurement. The post etch texture smoothing
process may be performed by spraying, flooding, immersing of other
suitable technique. The post etch texture smoothing solution may be
an alkaline etching bath or other suitable type of silicon etching
bath. In one embodiment, post etch texture smoothing solution is a
potassium hydroxide (KOH) bath that is similar to saw damage etch
bath discussed above, but is run at a lower temperature and/or KOH
concentration to reduce the silicon etch rate since not much
material is removed during this process step. In one embodiment,
post etch texture smoothing solution comprises between about 5% and
20% by volume of potassium hydroxide (KOH) and the balance DI
water. In one example, the texture smoothing solution process
includes etching the substrate at a temperature of less than about
70.degree. C. In another embodiment, the post etch texture
smoothing solution comprises hydrofluoric acid (HF) and an
oxidizing solution that is used at or near room temperature. For
example, the oxidizing solution may be selected from the group
consisting of nitiric acid (HNO.sub.3), sulfuric acid
(H.sub.2SO.sub.4), ozone (O.sub.3), hydrogen peroxide
(H.sub.2O.sub.2), or other suitable and cost effective solution.
The post etch texture smoothing process may be performed on the
substrate between about 5 seconds and about 600 seconds, such as
between about 10 seconds to about 240 seconds.
[0043] In one embodiment of the process sequence 100, after
performing step 104, a post etch-clean process, or step 106, may
optionally be performed. In one embodiment, the post etch-clean
process may be performed by wetting the substrate with a cleaning
solution that is used to remove left over material from the etching
process and clean the surface of the substrate before the
subsequent deposition steps are performed on the various regions of
the substrate. Wetting may be accomplished by spraying, flooding,
immersing of other suitable technique. The post etch-clean solution
may be an SC1 cleaning solution, an SC2 cleaning solution, HF-last
type cleaning solution, ozonated water solution, hydrofluoric acid
(HF) and hydrogen peroxide (H.sub.2O.sub.2) solution, hydrofluoric
acid and dissolved ozone (HF--O.sub.3) solution, or other suitable
and cost effective cleaning process may be used to clean a silicon
containing substrate. The post etch-clean process may be performed
on the substrate between about 5 seconds and about 600 seconds,
such as about 30 seconds to about 240 second, for example about 120
seconds.
[0044] The post etch-clean process can optionally be performed on
the substrate 200 after performing the texturization process (e.g.,
step 104). In one embodiment, the post clean process includes
exposing the substrate to ozonated water (step 106A in FIG. 1B)
followed by performing an etching step (step 106B in FIG. 1B) in a
1% by volume HF etching solution. In one embodiment, the post clean
process uses an ozonated DI water bath comprises between about 1
ppm-30 ppm of ozone disposed in DI water. In one example, the
ozonated DI water bath contain about 8 ppm of ozone. In another
embodiment, the ozonated DI water bath comprises between about 1
ppm-30 ppm of ozone and about 1 vol. % of hydrochloric acid (HCl).
The immersion of the substrate in the ozonated DI bath will cause
the metallic contamination and substrate surface to oxidize so that
they can be easily removed during the subsequent HF etching step.
In one embodiment, the ozonated DI water process is performed by
immersing the substrate in an in situ-generated ozone solution
(e.g., DI--O.sub.3) for a desired period of time to form a 20
.ANG..+-.5 .ANG. oxide on the surfaces of the silicon substrate. In
one embodiment, the substrate is rinsed in pure DI water before it
is immersed in the HF etch bath. In one embodiment, the HF etching
bath comprises 1 vol. % of HF. In another embodiment, the HF
etching bath comprises 1 vol. % of HF and about 1 vol. % of
hydrochloric acid (HCl). The HF etching process may be performed by
immersing the substrate in a room temperature bath for about 5
minutes. It has been found that the addition of hydrochloric acid
(HCl) to the ozonated DI water bath and/or HF etching bath is
useful to promote the cleaning process, since HCl tends to chelate
the metal ions found on the substrate surface and in the baths.
[0045] In one embodiment of the post etch-clean process, the
ozonated DI water immersion step (step 106A) and subsequent etching
step (step 106B) are sequentially repeated a number of times to
achieve a desired cleanliness on the substrate surface (e.g.,
DI+O.sub.3.fwdarw.HF etch.fwdarw.DI+O.sub.3.fwdarw.HF
etch.fwdarw.etc.). In one embodiment, the ozonated DI water
immersion step and subsequent HF etching step are sequentially
repeated at least two times. It has been found that sequentially
repeating the ozonated DI water immersion step (step 106A) and
subsequent etching step (step 106B) can greatly improve the
cleanliness of the substrate surface, which is important for
improving device yield by reducing defects in the subsequent solar
cell formation processes (e.g., emitter, passivation layer, and/or
ARC layer deposition steps). In one configuration, a rinsing step
is performed between the ozonated DI water immersion step and the
HF etching step and/or the HF etching step and the ozonated DI
water immersion step. In one embodiment of the post etch-clean
process, the ozonated DI water immersion step and subsequent HF
etching step are repeated a number of times, however, the ozonated
DI water immersion step (step 106A) is the last step that is
performed in the sequence, so that a thin oxide is left on the
surface of the substrate. The thin oxide layer formed at the end of
the processing sequence can be used in subsequent processing steps
and/or used to protect the substrate surface. The presence of a
thin oxide layer or an HF etched surface will have an effect on the
drying process performed after the post etch-clean process.
[0046] In one embodiment of the process sequence 100, a measurement
step 107 is performed during one or more of the processing steps
described above to measure the surface properties, such as the
uniformity and average optical properties and/or roughness of a
surface of the substrate. The measurement step 107 may include
performing one or more reflectance measurements, or roughness
measurements (e.g., profilometer), on a surface of the substrate to
allow the operator, or system controller 601 (FIG. 6), to monitor
and control the process and activity of the chemistries used in the
process sequence 100. In one embodiment, a reflectance measurement
of a substrate surface is performed and compared with reflectance
measurements taken on other known good solar cells, a reference
test coupon, and/or on one or regions of the same substrate before,
during and/or after one of the processes described above. In one
embodiment, a reflectance, or roughness, measurement is preformed
at one or more times during the etching process (step 104) to
monitor and control the surface texture formed during the etching
process. In one configuration, a reflectance, or roughness,
measurement is made in-situ or in an offline type fashion over the
same areas of the substrate or over broad regions of the substrate
surface (e.g., averaging multiple sites). In one embodiment, a
reflectance, or roughness, measurement is made in-situ by use of
one or more in-situ measurement device 651 (FIG. 6) and/or in an
offline type fashion using an offline-measurement device 652 (FIG.
6). In one case, the reflectance measurement is made after removing
the textured substrate from etch bath and rising the substrate. In
one embodiment, one or more reflectance, or roughness, measurements
are preformed during each of the processes performed after the
pre-clean process. The reflectance, or roughness, measurement
results can thus be used by the user or automated controller to
adjust the chemical concentrations in, for example, the
texturization etching solution, the pre-clean solution, or the
post-clean solution, and/or period of time that the substrate, or
subsequent substrates, are processed in each of the processing
steps described in process sequence 100. In one embodiment, the
system controller 601, discussed below, that is coupled to various
chemical metering devices 646 to adjust the chemical concentrations
in any of the formed baths in the various processing chambers
(e.g., reference numerals 621, 623, 625, 627, 629, 631 in FIG. 6),
process timing devices, and robotic elements that are adapted to
hold and transfer the substrates throughout the processing line
used to sequentially perform the steps in the process sequence 100.
For example, if the roughness of the substrate surface measured
towards the end of step 104 is smaller than expected then the
system controller 601 will adjust the chemical concentration in the
texture etch bath and/or increase the processing time to assure
that the final achieved roughness is within a desired range.
[0047] FIG. 4 depicts a comparison of reflectance curves of the
substrate surface before and after the surface texturing process
has been performed. Before surface texturing process, the
reflectance curve 402 at wavelength about 840 nm is about 25.93%.
After the surface texture process is performed and the substrate
surface has been textured, the reflectance curve 404 at wavelength
about 840 nm is reduced to about 12.99%, indicating about 50
percent reduction in optical loss of incident light, thereby
increasing the total amount of light entering into the solar cell
and available for optical confinement and trapping in the substrate
200. Accordingly, by performing the surface texturing process on a
substrate surface, the efficiency of solar cells is enhanced.
[0048] Thus, methods for surface texturing a crystalline silicon
substrate are provided. The methods advantageously produce a
textured surface on a substrate surface having desired roughness
and surface structure. In this manner, the textured surface on the
substrate efficiently increases the photoelectric conversion
efficiency and device performance of the PV solar cell as compared
to conventional methods.
[0049] It has been found that one key issue in the preparation of
crystalline silicon substrates with a high degree of electrical
passivation is the elimination of chemical contamination at the
interface between silicon and the first passivating layer. In order
to realize high carrier lifetime and low surface recombination
velocity (SRV), and ultimately high light conversion efficiency,
the external surfaces of the active regions of the solar cell must
cleansed of any metal residues which result from the silicon
substrate being cut from an ingot by use of a wire saw and abrasive
slurry. Although this cleaning process is currently accomplished by
a variety of means, including wet etching and cleaning, reports of
detailed metrology of the surface metal composition after
performing conventional cleaning processes is limited. In order to
get high sensitivity to trace concentrations of metals, and the
ability to sample the entire wafer surface, the use of vapor phase
desorption (VPD) extraction combined with inductively coupled
plasma mass spectrometry (ICPMS) detection has been found to be
beneficial. This technique gives sensitivity on the order of
0.1.times.10.sup.10 atoms cm.sup.-2 for many transition metal
elements. Some of the important elements in determining where the
surface is clean include, but are not limited to aluminum (Al),
calcium (Ca), chrome (Cr), copper (Cu), iron (Fe), magnesium (Mg),
nickel (Ni), potassium (K), sodium (Na), titanium (Ti), and zinc
(Zn).
[0050] Conventional high efficiency solar cell cleaning processes
typically have borrowed or inherited techniques used in memory or
CPU process flows. However, the demands and economy of the solar
fabrication process has created a need for inexpensive and simpler
methods. Whereas the conventional RCA type cleaning process has a
long history in the integrated circuit industry, the costs of
purchasing chemicals and associated waste treatment are not
compatible with solar cell manufacturing requirements. It has been
found that the cost of cleaning substrates can be reduced, by
substituting dissolved in situ-generated ozonated DI water
(DI--O.sub.3) treatments for other conventional peroxide-based acid
or base chemistries. As discussed above, using a DI--O.sub.3
oxidation sequence followed by 1% HF etching step was effective in
removing silicon and metallic oxides, to achieve low surface metal
concentration. The DI--O.sub.3 step itself is most effective at
removing Cu, Fe, and Ni residue.
[0051] The effectiveness of multi-element surface concentration
data, combined with carrier lifetime analysis, for various cleaning
methods is illustrated below in Table 1.
TABLE-US-00001 TABLE 1 Sawed HN10 SD TE PC RCA Aluminum (Al) 9900
50 0.9 0.8 1.9 20.0 Calcium (Ca) 100000 410 3.3 1.3 2.0 41.0
Chromium (Cr) 700 36 0.3 0.1 0.1 0.4 Copper (Cu) 120000 3800 72.0
55.0 0.2 1.9 Iron (Fe) 440000 240 74.0 49.0 4.1 10.0 Magnesium (Mg)
25000 150 0.7 0.4 1.1 6.5 Nickel (Ni) 1600 15 14.0 0.1 0.2 1.5
Potassium (K) 2600 18 1.2 5.9 6.3 110.0 Sodium (Na) 8900 91 2.0 3.9
5.7 11.0 Titanium (Ti) 970 21 3.3 0.1 0.1 1.0 Zinc (Zn) 33000 26
1.0 1.0 0.8 2.1 tau (lifetime) .tau. 1.2 2.2 183.0 225.0 328.0
348.0
[0052] The data in Table 1 was generated by use of VPD-ICPMS
metrology techniques. The cleanliness data for the 11 elements, as
shown, has units of 10.sup.10 atoms cm.sup.-2, and QSSPC lifetime
data (e.g., tau) for substrates passivated with a 750 .ANG. PECVD
SiN.sub.x film. The "sawed" column includes the cleanliness results
for an n-type monocrystalline solar substrate that was sawed,
singulated, and coarsely cleaned of glue, wire residue, and slurry
particles by use of a water rinsing step. The HN10 column
illustrates data collected for a substrate that went through the
pre-clean "HN10" process described above. The "SD" column
illustrates data collected for a substrate that went through the
pre-clean "saw damage" process (e.g., 20% KOH etch maintained at
70.degree. C. step) described above. For the "PC" column
illustrates data collected for a substrate that went through the
post-clean DI--O.sub.3 and 1% HF etch process described above. The
"TE" column illustrates data collected for a substrate that went
through the processes described in the examples shown above in
relation to step 104. The "RCA" columns column illustrates data
collected for a substrate that went through the conventional RCA
clean process (e.g., a sequence of cleaning steps including the SC1
and SC1 clean processes).
Hardware Configuration Example
[0053] FIG. 6 is a schematic plan view of one embodiment of a
production line 600 that is adapted to perform the process sequence
100 discussed above. In general, the production line 600 comprises
a system controller 601, a mainframe 619, and robotic device 615
that are adapted to transfer substrates between the plurality of
processing chambers disposed within the mainframe 619. The shape,
orientation or number of processing chambers (e.g., reference
numerals 621-633) illustrated in FIG. 6 is not intended to be
limiting to the scope of the invention described herein.
[0054] In general, the system controller 601 is used to control one
or more components and processes performed in the production line
600. The system controller 601 is generally designed to facilitate
the control and automation of the production line 600 and typically
includes a central processing unit (CPU) (not shown), memory (not
shown), and support circuits (or I/O) (not shown). The CPU may be
one of any form of computer processors that are used in industrial
settings for controlling various system functions, substrate
movement, chamber processes, process timing and support hardware
(e.g., sensors, robots, motors, timing devices, etc.), and monitor
the processes (e.g., chemical concentrations, processing variables,
chamber process time, I/O signals, etc.). The memory is connected
to the CPU, and may be one or more of a readily available memory,
such as random access memory (RAM), read only memory (ROM), floppy
disk, hard disk, or any other form of digital storage, local or
remote. Software instructions and data can be coded and stored
within the memory for instructing the CPU. The support circuits are
also connected to the CPU for supporting the processor in a
conventional manner. The support circuits may include cache, power
supplies, clock circuits, input/output circuitry, subsystems, and
the like. A program, or computer instructions, readable by the
system controller 601 determines which tasks are performable on a
substrate. Preferably, the program is software readable by the
system controller 601 that includes code to perform tasks relating
to monitoring, execution and control of the movement, support,
and/or positioning of a substrate along with the various process
recipe tasks and various chamber process recipe steps being
performed in the solar cell production line 600. In one embodiment,
the system controller 601 is used to control the process variables
in the processing modules (e.g., chemical concentrations, bath
temperature, processing time) and a robotic device(s) to control
the strategic movement, scheduling and running of the production
line 600 to make the processes repeatable, resolve queue time
issues and prevent over or under processing of the substrates. In
one embodiment, the system controller 601 has a timing device (not
shown), or processing clock, that is configured to monitor and
control the length of time of the processes performed on each of
the substrates in each of the processing chambers in the production
line 600 based on data received from sensors (e.g., temperature,
pH, ORP, conductivity) that are configured to measure properties of
the chemical baths in each of the processing chambers, process
endpoint measurements, such as reflectance measurements made on the
surface of the substrates during or after processing, and/or other
useful process related information received by the system
controller 601.
[0055] One aspect of the production line 600 is the ability of the
production line to receive a "raw" unprocessed substrate and
perform a plurality of automated processes to form a surface
texture. To move the solar cell substrate(s) to the various
processing stations one or more robots, conveyors and/or other
automation devices are used to control the movement substrates
through the production line 600. In one example, the production
line 600 is configured so that the process flow through the system
generally follows a flow path "P", as shown as paths
P.sub.1-P.sub.14 in FIG. 6. In general, the bulk of the movement of
the various substrates through the production line 600 is performed
by use of one or more robotic devices 615, or robotic assembly,
that are adapted to move and position the substrates so that can be
received by, or positioned within, one or more of the processing
chambers (e.g., reference numerals 621-633) and stations 620, 634
by use of commands sent by the system controller 601. In one
embodiment, the robotic device 615 may comprise a robot 615A that
is adapted to move and position one or more substrates along the
length of the mainframe 619 by use of horizontal motion control
system 615B (e.g., slide, linear motor). In one example, the
robotic device 615 is a conventional robotic devices, such as a
6-axis robot or SCARA robot that is coupled to a horizontal motion
control system 615B and is configured to move and position the
substrates as desired within the various processing chambers
621-633 and stations 620, 634. In one configuration, as shown in
FIG. 6, the horizontal motion control system 615B is positioned
over the mainframe 619 components.
[0056] FIG. 6 illustrates one example of a substrate processing
sequence 100 in which a number of process steps are performed on
one or more substrates that are transferred and processed within
the mainframe 619. The processing sequence 100 generally includes
the competition of processing steps (e.g., reference numerals
102-107 in FIGS. 1A-1B) and transferring steps (e.g., paths
P.sub.1-P.sub.14). FIG. 6 illustrates an example of the transfer
steps that one or more substrates may follow as the process steps
in the process sequence 100 illustrated in FIG. 1B is performed. In
one embodiment, as shown in FIG. 6, the robotic device 615 is
adapted to transfer a batch, or cassette, of substrates that are to
be processed all at the same time in each of the processing
chambers 621-633 in the production line 600. In this configuration,
a batch of substrates are removed from a input staging area station
620 by the robot device 615 and are delivered to a process chamber
603 following the transfer path P.sub.1, so that step 103A (FIG.
1B) can be completed on the substrate. In one embodiment, the step
103A entails exposing the substrates an acid or solvent containing
solution to pre-clean the surfaces of the substrates. Once the step
103A has been completed, the substrates are then transferred to the
process chamber 622 by the robotic device 615 following the
transfer path P.sub.2, where a dunk and/or spray rinsing step in DI
water is performed to remove any chemicals remaining on the surface
of the substrate from step 103A. After completing the rinsing step
the substrate is then transferred to process chamber 623 by the
robotic device 615 following the transfer path P.sub.3, where step
103B is performed on the substrates. After performing the process
step 103B the substrates are then transferred by the robotic device
615, following the transfer path P.sub.4, to the process chamber
624, where a dunk and/or spray rinsing step in DI water is
performed to remove any chemicals remaining on the surface of the
substrate from step 103B. After performing the rinsing step in
process chamber 624 the substrates are then transferred by the
robotic device 615, following the transfer path P.sub.5, to the
processing chamber 625 where step 104 is performed. In one
configuration, as shown in FIG. 6, the processing chamber 625 is
sized to hold a plurality of batches of substrates since the
processing time in step 104 is generally longer than the processes
performed in the other processing chambers (e.g.,
3.times.-30.times. longer), and thus allow a better utilization of
the processing chambers once a steady state flow of substrates are
delivered through the production line 600. Thus, in some
configurations of the production line 600 one or more of the
processing chambers are sized to allow multiple batches of
substrates to be processed in parallel therein to prevent
bottlenecks and improve the substrate throughput. In one example,
batch may include 5 or more substrates, more preferably 20 or more
substrates. After performing step 104 the substrate is then
transferred by the robotic device 615, following the transfer path
P.sub.6, to the process chamber 626 where a rinse step in DI water
is performed to remove any chemicals remaining on the surface of
the substrate from step 104. After rinsing the substrates they are
then transferred by the robotic device 615, following the transfer
path P.sub.7, to the process chamber 627 where post etch texture
smoothing process, such as step 105 is performed. Once the step 105
has been completed, the substrates are then transferred to the
process chamber 628 by the robotic device 615 following the
transfer path P.sub.8, where a dunk and/or spray rinsing step in DI
water is performed to remove any chemicals remaining on the surface
of the substrate from step 105. After rinsing the substrates they
are then transferred by the robotic device 615, following the
transfer path P.sub.9, to the process chamber 629 where post-clean
step, such as step 106A is performed. Once the step 106A has been
completed, the substrates are then transferred to the process
chamber 630 by the robotic device 615 following the transfer path
P.sub.10, where a dunk and/or spray rinsing step in DI water is
performed to remove any chemicals remaining on the surface of the
substrate from step 106A. The substrates are then transferred to
process chamber 631 following the transfer path P.sub.11 using the
first robotic device 615, where step 106B is performed. In one
embodiment, the robotic device 615 is adapted to deliver the
substrates between the process chambers 629-632 multiple times to
perform the sequential repetition of steps 106A-106B, as discussed
above. In one embodiment, the processing chambers 629-632 are sized
to hold a plurality of batches of substrates since the processing
time so that multiple batches of substrates can processed at one
time to allow a better utilization of the processing chambers when
the sequential repetition of steps 106A-106B is performed so that a
steady state flow of substrates are delivered through the
production line 600. After steps 106A and 106B are complete, the
robotic device 615 transfers the substrates to the process chamber
632 following the transfer path P.sub.12, where a rinsing step is
performed. Once the rinsing step has been completed, the substrates
are then removed from the process chamber 632 by the robotic device
615 and transferred to the following the transfer path P.sub.13 to
the drying chamber 633, where the surface of the processed
substrates can be dried. The drying process may include drying the
substrate with a flow nitrogen gas, or a flow of clean dry air.
Once the drying process is complete, the substrates are then
transferred to the following the transfer path P.sub.14 to the exit
staging area 634, where the substrate(s) can be received for
subsequent solar cell formation processing, such as discussed above
in conjunction with FIGS. 3A-3B.
[0057] In one embodiment, the robotic device 615 is adapted to
transfer one or more substrates from one or more of the processing
chambers 621-632 or staging area stations 620, 634 to an
offline-measurement device 652 that is adapted perform one or more
surface property measurements, such as reflectance and/or roughness
measurements (e.g., profilometer), on a surface of the substrate to
allow the system controller 601 to monitor and control the process
and activity of the chemistries used in each of the processing
chambers in the process sequence 100. In one configuration the
robotic device 615 is adapted to deliver one or more of the
substrates to the offline-measurement device 652 for testing and
analysis following path P.sub.22 after a rinsing step is performed
in one of the processing chambers 622, 624, 626, 628, 630 or 632.
In one embodiment, one or more in-situ-measurement devices 651 are
adapted performing surface property measurements on a surface of
one or more of substrates disposed in at least one of the
processing chambers 621-632. The in-situ-measurement device 651 can
allow the system controller 601 to monitor and control the process
and activity of the chemistries used in each of the processing
chambers in the process sequence 100 in real time or at discrete
intervals during the process. In one embodiment, the system
controller 601 is able to control the amount and timing of the
delivery of one or more chemicals (e.g., ozone, acids, bases,
wetting agents, etching additives) from a chemical delivery source
645 to one or more of the processing chambers in the production
line 600, such as processing chambers 621, 623, 625, 627, 629 and
631. In one embodiment, the chemical delivery source 645 is adapted
to meter a desired amount of a concentrated chemical into an
aqueous solution containing bath. In one example, the chemical
delivery source 645 is adapted to meter a desired amount of a
concentrated potassium hydroxide solution 645A, a concentrated
hydrofluoric acid solution 645B, a concentrated hydrochloric acid
(HCl) solution 645C, a concentrated nitric acid solution 645D, a
concentrated wetting agent containing solution 645E, a concentrated
etching additive containing solution 645F, and/or ozone (O.sub.3)
645G to, and/or remove a desired amount from, the processing
chambers 621-632, which are each connected to a DI water source
(not shown). It should be noted that the configuration illustrated
in FIG. 6 is not intended to limiting as to the scope of the
invention, since the chemical delivery source 645 will generally
contain as many solutions and delivery devices as need to fully
control all of baths used in the process sequence 100. In one
example, DI water may be metered into one or more of the various
processing chambers 621-632.
[0058] While the foregoing is directed to embodiments of the
present invention, other and further embodiments of the invention
may be devised without departing from the basic scope thereof, and
the scope thereof is determined by the claims that follow.
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