U.S. patent application number 10/393909 was filed with the patent office on 2004-09-23 for dynamic feed forward temperature control to achieve cd etching uniformity.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Chang, Ming-Ching, Chen, Li-Shiun, Chiu, Yung -Hung, Lin, Huan-Just, Lin, Li-Te S., Tao, Hun-Jan.
Application Number | 20040182822 10/393909 |
Document ID | / |
Family ID | 32988263 |
Filed Date | 2004-09-23 |
United States Patent
Application |
20040182822 |
Kind Code |
A1 |
Chen, Li-Shiun ; et
al. |
September 23, 2004 |
DYNAMIC FEED FORWARD TEMPERATURE CONTROL TO ACHIEVE CD ETCHING
UNIFORMITY
Abstract
A method for compensating CD variations across a semiconductor
process wafer surface in a plasma etching process including a
semiconductor wafer having a process surface comprising patterned
features; carrying out a first plasma etching process wherein the
semiconductor wafer is heated to at least two selectively
controllable temperature zones; determining a first dimensional
variation of etched features with respect to reference dimensions
over predetermined areas of the process surface including the two
selectively controllable temperature zones; determining operating
temperatures for the two selectively controllable temperature zones
to achieve a targeted dimensional variation change in the first
dimensional variation to achieve a desired second dimensional
variation; plasma etching the process surface to the desired
operating temperatures; and, determining an actual dimensional
variation change for use in at least one subsequent plasma etching
process.
Inventors: |
Chen, Li-Shiun; (Hsinchu,
TW) ; Chang, Ming-Ching; (Taipei, TW) ; Lin,
Huan-Just; (Hsin-Chu, TW) ; Lin, Li-Te S.;
(Hsin-chu, TW) ; Chiu, Yung -Hung; (Taipei,
TW) ; Tao, Hun-Jan; (Hsinchu, TW) |
Correspondence
Address: |
TUNG & ASSOCIATES
Suite 120
838 W. Long Lake Road
Bloomfield Hills
MI
48302
US
|
Assignee: |
Taiwan Semiconductor Manufacturing
Co., Ltd.
|
Family ID: |
32988263 |
Appl. No.: |
10/393909 |
Filed: |
March 20, 2003 |
Current U.S.
Class: |
216/67 ;
257/E21.31; 257/E21.312 |
Current CPC
Class: |
H01J 37/32935 20130101;
H01L 21/32135 20130101; H01L 21/32137 20130101 |
Class at
Publication: |
216/067 |
International
Class: |
C23F 001/00 |
Claims
What is claimed is:
1. A method for compensating for CD variations across a
semiconductor process wafer surface in a plasma etching process
comprising the steps of: providing a semiconductor wafer having a
process surface comprising patterned features; carrying out a first
plasma etching process wherein the semiconductor wafer is heated
according to at least two selectively controllable temperature
zones; determining a first dimensional variation of etched features
with respect to reference dimensions over predetermined areas of
the process surface including the at least two selectively
controllable temperature zones; determining operating temperatures
for the at least two selectively controllable temperature zones to
achieve a targeted dimensional variation change in the first
dimensional variation to achieve a desired second dimensional
variation in a subsequent etching process; plasma etching the
process surface according to the desired operating temperatures;
and, determining an actual dimensional variation change for use in
at least one subsequent plasma etching process.
2. The method of claim 1, further comprising the step of archiving
the actual dimensional variation change in association with
operating temperatures.
3. The method of claim 2, wherein the steps of determining
operating temperatures, plasma etching, and determining actual
dimensional variation change are repeated to approach a CD
variation window in the at least one subsequent plasma etching
process.
4. The method of claim 1, wherein the at least two selectively
controllable temperature zones comprise a wafer holding surface in
heat exchange relationship with the semiconductor wafer.
5. The method of claim 4, wherein the at least two selectively
controllable temperature zones are disposed radially concentric to
one another heating radially concentric portions of the
semiconductor wafer.
6. The method of claim 1, wherein the step of determining operating
temperatures further comprises reference to a previously determined
relationship between the operating temperatures and dimensional
variation change.
7. The method of claim 1, wherein the step of determining operating
temperatures further comprises reference to an archive of previous
operating temperatures and dimensional variation changes.
8. The method of claim 7, wherein the archive comprises a
relational database.
9. The method of claim 7, wherein reference to an archive comprises
comparing a desired dimensional variation change to archived
dimensional changes and associated operating temperatures.
10. The method of claim 9, wherein comparing comprises minimizing a
difference between the desired dimensional variation change and the
archived dimensional changes.
11. The method of claim 10, wherein minimizing a difference
comprises a methodology selected from the group consisting of a
linear and non-linear least squares analysis.
12. A method for achieving CD uniformity in a plasma etching
process comprising the steps of: providing a semiconductor wafer
having a process surface comprising a plurality of features having
critical dimensions (CD); determining a first CD variation of
etched features with respect to reference dimensions over
predetermined areas of the process surface including the at least
two selectively controllable temperature zones; determining
operating temperatures for at least two selectively controllable
temperature zones for heating the semiconductor wafer in a plasma
etching process for etching the plurality of features to achieve a
preselected second CD variation; carrying out the plasma etching
process at the operating temperatures; determining the second CD
variation; and, adding the results of the second CD variation in
association with the operating temperatures to an archive.
13. The method of claim 12, wherein the at least two selectively
controllable temperature zones are disposed radially concentric to
one another for heating a backside of the semiconductor wafer.
14. The method of claim 12, wherein the steps of determining
operating temperatures, carrying out the plasma etching process,
and determining the second CD variation are repeated to approach a
preselected CD variation window in a subsequent plasma etching
process.
15. The method of claim 12, wherein the step of determining
operating temperatures further comprises reference to a previously
determined relationship between the operating temperatures and CD
variation.
16. The method of claim 12, wherein the step of determining
operating temperatures further comprises reference to the
archive.
17. The method of claim 16, wherein reference to the archive
comprises comparing a desired CD variation to archived CD
variations having associated operating temperatures.
18. The method of claim 9, wherein comparing comprises minimizing a
difference between a desired CD variation and an archived CD
variation.
19. The method of claim 12, wherein the step of determining
operating temperatures further comprises reference to a previously
determined relationship between the operating temperatures and CD
variation change.
20. The method of claim 12, wherein the step of adding comprises
replacing previous archived data that falls outside a predetermined
window of values comprising a relationship between CD variation and
operating temperatures.
Description
FIELD OF THE INVENTION
[0001] This invention generally relates to plasma reactor processes
including dry etching processes and more particularly to a
temperature control methodology for dynamically adjusting wafer
temperature zone parameters in a plasma etching process to achieve
critical dimension (CD) uniformity.
BACKGROUND OF THE INVENTION
[0002] In the field of plasma (dry) etching, various processing
parameters including, for example, RF power, RF bias, pressure, gas
flow rate, temperature, and vacuum conditions are pre-determined in
order to accomplish a particular plasma etching process. In
addition, many plasma etching processes are pre-programmed to
follow a series of steps for predetermined time periods also
referred to as a process recipe, where the processing parameters
may be altered at each step to achieve a desired etching
result.
[0003] While there are several types of plasma reactor
configurations including a wide variety of gaseous reactants used
for etching a semiconductor wafer to form semiconductor features,
some etching processes are mores susceptible to wafer temperature
than others. For example the temperature of the process wafer
determines the rate of chemical reactions that take place on the
wafer surface in an etching process including deposition and
etching away of polymers in etching high aspect ratio features
including for example, openings as well as protrusions. For
example, the wafer temperature may affect the etching rate,
especially in reaction controlled processes. Temperature control of
a semiconductor wafer during an etching process is becoming
increasingly critical as semiconductor feature sizes decrease and
the diameter of process wafers increases. For example, it is
frequently required to achieve a critical dimension etching
uniformity of less than about 3 nm in some processes, for example
in gate etching to adequately control gate length which critically
affects electrical function of the transistor.
[0004] For example, where the etch reaction is the dominant removal
process. Since the etch reaction is affected by the wafer
temperature, local gradients in the wafer temperature may result in
differing etching rates thereby resulting in different critical
dimension uniformity over the wafer surface. Other etching
processes may be dominated by the recombination of gas species, for
example including chlorine atoms may be strongly influenced by the
wafer temperature.
[0005] Since process wafers are frequently heated during etching,
for example from a backside by an electrostatic chuck including a
heating means, the wafer temperature may vary over a diameter of
the wafer due to radial heat transfer. Thus, critical dimension
(CD) non-uniformities caused by temperature variations of the
semiconductor wafer may vary concentrically from wafer center to
edge. Etching non-uniformities including edge to edge
non-uniformities also referred to as a leveling effect adversely
affect subsequent photolithographic processes by causing defocusing
difficulties in transferring mask images to the wafer surface.
[0006] A device sizes, including transistors are scaled down to
below about 1 micron, CD requirements have become more stringent
and difficult to control. For example, two parameters known as bias
and tolerance are frequently used to define CD requirements in the
semiconductor processing art. CD Bias is the difference in lateral
dimension between the etched image and the mask image. CD
uniformity is a measure of the statistical distribution, for
example 3.times. sigma, of CD bias values that characterized the
uniformity of etching. For example, in etching polysilicon gate
structures, the gate length determines the channel length and the
acceptable electronic functioning of a transistor making gate CD
uniformity critical in the gate formation process. Nonuniform
etching rates over the diameter of the process wafer are frequently
strongly influenced by the temperature of the process wafer may
adversely affect the manufacture of the transistor device in
several ways. For example, wafer edge-to-edge (across wafer
diameter) variations in etching rates cause CD non-uniformities
within the wafer, for example concentrically, which contribute to
defocus in subsequent photolithographic processes. As a result, the
etching non-uniformities compound CD bias in subsequent process
steps. A goal in the semiconductor manufacture process industry is
to achieve CD uniformity to within less than about 30
Angstroms.
[0007] A problem in prior art etching processes and systems is the
limitation of carrying out etching processes by trial and error.
Since a plasma etching process is frequently a multi-step process
to etch through a series of different material layers, it is
frequently difficult to determine after the fact which etching
process was a major contributor to the CD non-uniformity. Further,
CD inspection is frequently accomplished after the etching process
is complete causing a waste of time and resources if the CD
uniformity is not within specifications. Frequently, temperature
control adjustment in a plasma etching process is a `black art`
limited by trial and error techniques to obtain the desired CD
uniformity. Changes in one of several components of the plasma
reactor system over time may unpredictably change heat transfer
characteristics and consequently wafer process temperatures
including gas pressures and gas flow rates which also must be
frequently adjusted to maintain CD uniformity. Further, etching
parameters are frequently required to be altered from one etching
process to another, making the re-establishment of optimal etching
parameters including optimal gas flow characteristics time
consuming and frequently limited to reliance on a trial and error
approach.
[0008] Thus, there is a need in the semiconductor processing art to
develop an improved wafer temperature control methodology for in a
plasma etching process to compensate for CD non-uniformity and
achieve repeatable and predictable CD uniformity.
[0009] It is therefore an object of the invention to provide an
improved wafer temperature control methodology for in a plasma
etching process to compensate for CD non-uniformity and achieve
repeatable and predictable CD uniformity while overcoming other
shortcomings and deficiencies of the prior art.
SUMMARY OF THE INVENTION
[0010] To achieve the foregoing and other objects, and in
accordance with the purposes of the present invention, as embodied
and broadly described herein, the present invention provides a
method for compensating for CD variations across a semiconductor
process wafer surface in a plasma etching process.
[0011] In a first embodiment, the method includes providing a
semiconductor wafer having a process surface comprising patterned
features; carrying out a first plasma etching process wherein the
semiconductor wafer is heated according to at least two selectively
controllable temperature zones; determining a first dimensional
variation of etched features with respect to reference dimensions
over predetermined areas of the process surface including the at
least two selectively controllable temperature zones; determining
operating temperatures for the at least two selectively
controllable temperature zones to achieve a targeted dimensional
variation change in the first dimensional variation to achieve a
desired second dimensional variation in a subsequent etching
process; plasma etching the process surface according to the
desired operating temperatures; and, determining an actual
dimensional variation change for use in at least one subsequent
plasma etching process.
[0012] These and other embodiments, aspects and features of the
invention will be better understood from a detailed description of
the preferred embodiments of the invention which are further
described below in conjunction with the accompanying Figures.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIGS. 1A is a schematic representation of an exemplary
plasma reactor including a portion of a process wafer temperature
control system according to embodiments of the present
invention.
[0014] FIG. 2 is a top view of an electrostatic chuck showing a
plurality of temperature control zones used for adjusting the wafer
temperature according to an embodiment of the present
invention.
[0015] FIGS. 3A is a 3-dimensional representation of a process
wafer surface CD uniformity following a first plasma etching
process before temperature zone adjustment according to embodiments
of the present invention.
[0016] FIG. 3B is a 3-dimensional representation of a process wafer
surface CD uniformity following a second plasma etching process
following temperature zone adjustment according to embodiments of
the present invention.
[0017] FIG. 4 is a process flow diagram including several
embodiments of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0018] Referring to FIG. 1, in an exemplary implementation of the
present invention, is shown an exemplary plasma reactor 10 showing
a portion of an exemplary wafer temperature control system
including a reactor chamber 12. The plasma reactor 10 may include
any plasma reactor including a gas flow supply to the plasma
reactor, a vacuum pumping system to maintain a plasma operating
pressure, and a means to ignite a plasma within the plasma reactor.
The plasma reactor 10, for example, is an inductively coupled
plasma (ICP) reactor or a transformer coupled plasma (TCP) reactor.
A reactor chamber 12, preferably includes a wafer holding means
14A, for example an electrostatic chuck (ESC) for holding process
wafer 14B, for example, disposed in the lower part of the reactor
chamber 12 above a vacuum pumping pathway 16A, communicating with a
vacuum pumping system, for example including one or more
turbomolecular pumps (not shown), and one or more mechanical
roughing pumps (not shown).
[0019] Preferably, the plasma reactor 10 includes a gas feeding
means 20, for example, disposed in an upper portion of the reactor
chamber 12, for example, including a plurality of individually gas
flow rate adjustable gas feed lines for delivering selected gas
flow rates to preferentially contact portions of the process wafer
14B. The plasma reactor, for example also includes an RF power coil
e.g., 22 and dielectric window 24 for coupling RF power into the
reactor chamber 12.
[0020] Referring to FIG. 2A, is shown a top view of the wafer
holding means (wafer holder) 14A, for example an electrostatic
chuck, preferably including at least 2 concentrically disposed
heating temperature zones e.g., Z1 and Z2 disposed radially
concentric with respect to one another along the wafer holder
surface. The wafer holding means may optionally include more than
2, for example 3 concentrically disposed heating temperature zones
as shown in FIG. 2B, e.g., Z1, Z2, and Z3. The heating temperature
zones are preferably configured have independently selectable and
controllable set point operating temperatures. For example each of
the zones preferably includes one or more temperatures sensors and
heating means communicating with a controller for controllably
setting an operating temperature within each respective heating
temperature zone. The temperature within each zone may be
controlled, for example, by separately controllable resistive
heating elements or separately controllable heat exchange fluid
pathways disposed within the wafer holding means in heat transfer
relationship with the surface of the wafer holding means and
mounted wafer 14A.
[0021] Referring again to FIG. 1, wafer holder 14A, for example an
electrostatic chuck including heating temperature zones are in
programmable and responsive communication with a controller 28 for
increasing or decreasing an operating temperature of the heating
temperature zones, for example by means of communication line 28B.
By programmable and responsive communication is meant preferably
two-way communication with the controller for sending and receiving
data communications, for example receiving temperature sensor data
and sending commands for controlling a voltage or current through
resistive heating elements within the respective temperature zones.
In addition, the controller 28 may be in communication with a
server e.g., 30 by means of communication line 30B the server
including at least a computer readable storage media and a
processor for processing computer readable instructions in the form
of a computer program for plasma reactor process control.
Preferably the server 30 includes a graphical user interface for
visually displaying collected and archived data and entering
commands for controlling the plasma process. For example, the
process control programs may include batch operation mode and
real-time interactive operation mode including a graphical user
interface where independent process variables may be selectively
altered or overridden in real time. It will be appreciated that the
controller, server, and graphical user interface may be disposed
remotely from one another or may be included in a combined
configuration.
[0022] According to one embodiment of the present invention, a
semiconductor process wafer is subjected to a photolithographic
patterning process. Following development of the photoresist, a
first set of critical dimension (CD) measurements are performed on
the patterned semiconductor features over predetermined measurement
areas of the process wafer surface and archived, for example
entered into a database, preferably a relational database, the CD
measurements associated with the particular process wafer
orientation and photomask used to pattern the semiconductor
features. Preferably, CD variation values are determined from the
CD measurements including CD bias values and/or CD uniformity
values. For example, CD Bias is the difference in lateral dimension
between the etched image and the mask image. CD uniformity is a
measure of the statistical distribution, for example 3.times.
sigma, of CD bias values that characterize the variation in CD bias
values. For example, the CD variation values are associated with an
X an Y coordinate corresponding to the predetermined measurement
areas of the wafer process surface. In addition, the wafer process
areas between the measurement areas are preferably interpolated
according to a mathematical relationship representing a change in a
CD variation value with a change in wafer surface location. CD
variation values may be further processed by known methods to
create a CD map, for example a 3-dimensional CD variation map. The
CD variation data is used to determine a desired change in the CD
variation with respect to the process wafer surface, for example a
desired change in a grid of CD measurement areas including
interpolated values over the process wafer surface. The desired
change in the CD variation values is associated with wafer zone
temperatures in a plasma etching process including at least two
temperature zones on the wafer surface corresponding to respective
temperature zones in the wafer holder in heat exchange relationship
with the process wafer. A target zone temperature for each of the
temperature zones is selected to achieve a targeted change in CD
variation, for example, within a predetermined CD variation
window.
[0023] The CD variation values are determined by a first set of CD.
measurements over predetermined areas of the process wafer surface,
for example by conventional optical microscope and/or scanning
electron microscopic examination following either a photoresist
development process or a plasma etching process. A first set of CD
variation values, for example, can be determined by comparing the
first set of CD measurements to CD values obtained from the
photolithographic mask. Following determination of the magnitude of
the CD variation over the wafer surface, target zone temperatures
(set-points), are determined by querying a database including
previous plasma etching data relating a CD variation change with a
respective zone temperature. For example, etching rates may be
selectively varied across the diameter of the process surface by
selectively controlling the operating temperature of zone
temperatures and thereby the corresponding zone temperatures of the
process wafer. With properly selected zone temperatures, CD
variation changes may be effected in a subsequent plasma etching
process to compensate for existing CD variation thereby achieving a
CD variation within a predetermined CD variation window.
[0024] Preferably, the relational database is supplied with a
desired CD variation change and queried to determine appropriate
zone temperatures to obtain the CD variation change. The desired
change in CD variation to attain a CD variation within a
predetermined CD variation window can be represented by a
mathematical relationship between respective zone temperatures and
a resulting change in CD variation values determined from previous
plasma etching processes. For example, a preprogrammed set of
instructions determines the desired zone temperatures to produce a
desired change in CD variation with respect to a particular
concentric radial portion of the wafer corresponding to a
controllable temperature zone of the wafer holding means.
[0025] For example, the query may include supplying a desired CD
variation change for input into a previously determined
mathematical relationship between CD variation and zone temperature
to output a desired zone temperature. Alternatively, a desired CD
variation change is supplied for comparison to an archived set of
CD variation changes and associated zone temperatures for a linear
or non-linear least squares analysis to determine a mathematical
relationship between change in CD variation and zone temperature
within each temperature zone. The determined mathematical
relationship is then used to determine the zone temperature to
achieve the desired change in CD variation within each temperature
zone. Alternatively, the desired change in CD variation is compared
previous plasma etching process zone temperatures and CD variation
change to determine a zone temperature that most closely produces
the targeted change in CD variation. The change in CD variation is
determined from a second set of CD measurements following a plasma
etching process compared to a previous set of CD measurements
obtained for example, following a photolithographic patterning
process or a previous etching process carried out on the same
process wafer. The CD measurements may be mathematically
transformed into CD variation values, for example including
3.times. sigma values (CD uniformity) associated with a plurality
of CD bias measurements made over predetermined areas of the
process wafer surface.
[0026] In an exemplary implementation of the present invention a
multiple step etching process is carried out. For example in
etching semiconductor features multiple layers must be etched
through requiring several etching steps with different etching
chemistries. For example, following photolithographic patterning
and obtaining a first set of CD measurement values, a first
dielectric layer, for example a bottom anti-reflectance coating
(BARC) is etched through a thickness to expose an underlying layer.
The semiconductor process wafer is transferred to an inspection
station, for example a CD SEM, for determining a second set of CD
measurement values.
[0027] For example, referring to FIG. 3A is shown an exemplary
3-dimensional map of CD variation values (e.g., CD bias) over a
wafer surface. Shown are an X axis 32A and a Y axis 32B
corresponding to wafer process surface coordinates and a Z axis 32C
representing CD bias. The CD variation data in 3-dimensions
represents a 3-dimension pictorial view of CD variation over the
wafer process surface. For example, referring to FIG. 3A it is seen
that the CD bias is relatively greater at the wafer edge
corresponding to an outer temperature zone of the wafer and wafer
holding surface. For example, the wafer holder includes two
radially concentric temperature zones including an inner and outer
temperature zone similar to that shown in FIG. 2A but may include
multiple radially concentric temperature zones as shown in FIG. 2B.
For example, the inner and outer temperature zones in the first
etching process were about equal at a 60.degree. C. operating
temperature. Following obtaining the second set of CD measurement
values and determining a CD variation, desired (target) zone
temperatures for a subsequent etching process were determined to
achieve a targeted change in CD variation, for example setting the
outer temperature zone at 65.degree. C. and the inner temperature
zone at 55.degree. C.
[0028] Referring to FIG. 3B, a similar 3-dimensional CD variation
map is produced following a second plasma etching carried out at
target zone temperatures process and following another CD
measurement process. Shown is X axis 34A and Y axis 34B
corresponding to wafer process surface coordinates and Z axis 34C
representing CD bias where measurement values have been taken over
the same measurement areas of the process wafer surface. The wafer
is preferably oriented in a predetermined manner in both the
inspection station and in the plasma etch reactor and the same CD
measurement areas are used for CD measurement comparisons. It is
seen in FIG. 3B that the CD bias (CD variation value) over the
wafer surface is significantly improved to achieve a desired CD
variation within a CD variation window, for example having a CD
variation of less than about 3 nm.
[0029] Following obtaining the third set of CD measurements, a CD
variation change is determined by comparing the second set of CD
measurements and associated zone temperatures with the third set of
CD measurements and associated zone temperatures to determine a CD
variation change with temperature relationship followed by updating
(archiving) a database of such values. For example the database
optionally includes mathematical transformations, such as
3.times.Sigma values, and a mathematical relationship (leveling
correlation) between CD variation change and zone temperature. Thus
the most recent data corresponding to CD variation change with zone
temperature change is fed forward to update the database for use in
a subsequent plasma etching process thereby making the process a
dynamic feed forward process. The process is then repeated for a
subsequent plasma etching process on the same wafer or another
plasma etching process on another wafer.
[0030] For example, the database may be continually expanded with
newly fed-forward CD measurement data including a leveling
correlation following a plasma etching process and/or the database
may be updated by selectively replacing data associated with
previous plasma etching processes and zone temperature parameters
depending on a predetermined age of the data or a predetermined
variation window or error of the archived data compared with the
most recent data, thus dynamically accounting for changes in time
dependent plasma reactor and process variables.
[0031] Referring to FIG. 4 is shown a process flow diagram
including several embodiments of the present invention. In process
401 a process wafer is provided comprising semiconductor features
and associated critical dimensions (CD). In process 403, a first
set of CD measurement values are obtained over predetermined areas
of the process wafer surface to determine a first CD variation. In
process 405 target wafer heating zone temperatures to achieve a
desired change in CD variation are determined by referring to a
previously determined relationship between wafer heating zone
temperatures and CD variation including CD variation change. In
process 407, a plasma etching process is carried out at target
wafer heating zone temperatures. In process 409, a CD variation
including CD variation change is determined. In process 411 the CD
variation change with associated plasma process parameters
including wafer heating zone temperatures are archived and used to
determine an updated relationship between wafer zone temperature
and CD variation including CD variation change. As indicated by
process directional arrow 413, processes 405 followed by processes
407, 409 and 411 are optionally repeated in a dynamic feed forward
method to adjust wafer heating zone temperatures to achieve CD
uniformity.
[0032] Thus a method has been provided to compensate for CD
variations associated with CD non-uniformities over a wafer process
surface by selectively adjusting wafer temperature zones, for
example at least two radially concentric temperature zones, to
achieve CD uniformity by a dynamic feed forward process. As a
result, wafer temperatures can be selectively adjusted to achieve a
targeted CD variation across a wafer surface in a subsequent plasma
etching process thereby eliminating a blind trial and error
approach. In addition, by dynamically updating a database, time
dependent variations in plasma etching rates due to variations in
plasma etching parameters are dynamically accounted for, making the
control of CD uniformity in a plasma etching process more
predictable and reliable.
[0033] The preferred embodiments, aspects, and features of the
invention having been described, it will be apparent to those
skilled in the art that numerous variations, modifications, and
substitutions may be made without departing from the spirit of the
invention as disclosed and further claimed below.
* * * * *