Patent | Date |
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End-cut first approach for critical dimension control Grant 9,196,491 - Lin , et al. November 24, 2 | 2015-11-24 |
End-Cut First Approach For Critical Dimension Control App 20140106479 - Lin; Li-Te S. ;   et al. | 2014-04-17 |
End-cut first approach for critical dimension control Grant 8,563,410 - Lin , et al. October 22, 2 | 2013-10-22 |
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 8,404,546 - Woon , et al. March 26, 2 | 2013-03-26 |
Shallow junction formation and high dopant activation rate of MOS devices Grant 8,212,253 - Nieh , et al. July 3, 2 | 2012-07-03 |
Shallow Junction Formation and High Dopant Activation Rate of MOS Devices App 20110316079 - Nieh; Chun-Feng ;   et al. | 2011-12-29 |
Shallow junction formation and high dopant activation rate of MOS devices Grant 8,039,375 - Nieh , et al. October 18, 2 | 2011-10-18 |
End-cut First Approach For Critical Dimension Control App 20110124134 - Lin; Li-Te S. ;   et al. | 2011-05-26 |
Double Patterning Strategy For Forming Fine Patterns In Photolithography App 20110059407 - LIN; Li-Te S. ;   et al. | 2011-03-10 |
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20110027955 - Woon; Wei-Yen ;   et al. | 2011-02-03 |
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 7,838,887 - Woon , et al. November 23, 2 | 2010-11-23 |
Multi-step epitaxial process for depositing Si/SiGe Grant 7,816,217 - Lin , et al. October 19, 2 | 2010-10-19 |
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20090273034 - Woon; Wei-Yen ;   et al. | 2009-11-05 |
Embedded SiGe stressor with tensile strain for NMOS current enhancement Grant 7,612,389 - Lin , et al. November 3, 2 | 2009-11-03 |
SiGe selective growth without a hard mask Grant 7,494,884 - Lin , et al. February 24, 2 | 2009-02-24 |
Shallow junction formation and high dopant activation rate of MOS devices App 20080293204 - Nieh; Chun-Feng ;   et al. | 2008-11-27 |
SiGe selective growth without a hard mask App 20080083948 - Lin; Hsien-Hsin ;   et al. | 2008-04-10 |
Phosphoric acid free process for polysilicon gate definition Grant 7,307,009 - Lin , et al. December 11, 2 | 2007-12-11 |
Multi-step epitaxial process for depositing Si/SiGe App 20070148919 - Lin; Li-Te S. ;   et al. | 2007-06-28 |
Embedded SiGe stressor with tensile strain for NMOS current enhancement App 20070057287 - Lin; Li-Te S. ;   et al. | 2007-03-15 |
Method for controlling spacer oxide loss Grant 7,179,715 - Chiang , et al. February 20, 2 | 2007-02-20 |
Method for controlling spacer oxide loss App 20060216918 - Chiang; Ju-Chien ;   et al. | 2006-09-28 |
Phosphoric acid free process for polysilicon gate definition App 20050118755 - Lin, Li-Te S. ;   et al. | 2005-06-02 |
Fully dry, Si recess free process for removing high k dielectric layer App 20050081781 - Lin, Huan-Just ;   et al. | 2005-04-21 |
Iteratively selective gas flow control and dynamic database to achieve CD uniformity Grant 6,864,174 - Lin , et al. March 8, 2 | 2005-03-08 |
Phosphoric acid free process for polysilicon gate definition Grant 6,849,531 - Lin , et al. February 1, 2 | 2005-02-01 |
Test structure for differentiating the line and via contribution in stress migration Grant 6,835,578 - Lin , et al. December 28, 2 | 2004-12-28 |
Dry-wet-dry solvent-free process after stop layer etch in dual damascene process Grant 6,797,627 - Shih , et al. September 28, 2 | 2004-09-28 |
Partial via hard mask open on low-k dual damascene etch with dual hard mask (DHM) approach Grant 6,797,630 - Wu , et al. September 28, 2 | 2004-09-28 |
Dynamic Feed Forward Temperature Control To Achieve Cd Etching Uniformity App 20040182822 - Chen, Li-Shiun ;   et al. | 2004-09-23 |
Iteratively selective gas flow control and dynamic database to achieve CD uniformity App 20040185584 - Lin, Li-Te S. ;   et al. | 2004-09-23 |
Dynamic feed forward temperature control to achieve CD etching uniformity Grant 6,794,302 - Chen , et al. September 21, 2 | 2004-09-21 |
Method of dual damascene patterning Grant 6,720,256 - Wu , et al. April 13, 2 | 2004-04-13 |
N2/H2 chemistry for dry development in top surface imaging technology Grant 6,551,938 - Wu , et al. April 22, 2 | 2003-04-22 |
Partial hard mask open process for hard mask dual damascene etch Grant 6,376,366 - Lin , et al. April 23, 2 | 2002-04-23 |