U.S. patent application number 10/317578 was filed with the patent office on 2003-07-10 for cleaning solution for removing photoresist.
Invention is credited to Hwang, Young Sun, Jung, Jae Chang, Kong, Keun Kyu, Lee, Geun Su, Lee, Sung Koo, Shin, Ki Soo.
Application Number | 20030130148 10/317578 |
Document ID | / |
Family ID | 27567159 |
Filed Date | 2003-07-10 |
United States Patent
Application |
20030130148 |
Kind Code |
A1 |
Lee, Geun Su ; et
al. |
July 10, 2003 |
Cleaning solution for removing photoresist
Abstract
Cleaning solutions for removing photoresist resins and a method
of forming patterns using the same are disclosed. The cleaning
solution includes water (H.sub.2O) as main component, one or more
surfactants as additive selected from the group consisting of
polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and
hydrocarbon compounds having carboxylic acid (--COOH) group, a salt
of alcohol amine of Formula 1 and hydrocarbon compounds having
sulfonic acid (--SO.sub.3H) group, polyethylene glycol compounds,
compounds of Formula 3, compounds having a molecular weight ranging
from 1000 to 10000 including repeating unit of Formula 4, polyether
denatured silicon compounds and alcohol compounds. 1 wherein
R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, A, l and n are defined
in the specification.
Inventors: |
Lee, Geun Su; (Kyoungki-do,
KR) ; Jung, Jae Chang; (Seoul, KR) ; Shin, Ki
Soo; (Kyoungki-do, KR) ; Kong, Keun Kyu;
(Kyoungki-do, KR) ; Lee, Sung Koo; (Seoul, KR)
; Hwang, Young Sun; (Kyoungki-do, KR) |
Correspondence
Address: |
MARSHALL, GERSTEIN & BORUN
6300 SEARS TOWER
233 SOUTH WACKER
CHICAGO
IL
60606-6357
US
|
Family ID: |
27567159 |
Appl. No.: |
10/317578 |
Filed: |
December 12, 2002 |
Current U.S.
Class: |
510/175 ;
510/176; 510/178; 510/499; 510/505 |
Current CPC
Class: |
C11D 1/722 20130101;
C11D 3/3742 20130101; C11D 11/0047 20130101; C11D 7/267 20130101;
C11D 1/72 20130101; C11D 7/34 20130101; C11D 7/263 20130101; C11D
1/721 20130101; C11D 1/44 20130101; C11D 7/265 20130101; C11D
3/3738 20130101; C11D 3/373 20130101; G03F 7/422 20130101; C11D
7/3218 20130101 |
Class at
Publication: |
510/175 ;
510/176; 510/178; 510/499; 510/505 |
International
Class: |
C11D 001/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 12, 2001 |
KR |
2001-78470 |
Dec 14, 2001 |
KR |
2001-79354 |
Dec 14, 2001 |
KR |
2001-79355 |
Dec 18, 2001 |
KR |
2001-80572 |
Dec 18, 2001 |
KR |
2001-80573 |
Dec 18, 2001 |
KR |
2001-80574 |
Dec 18, 2001 |
KR |
2001-80575 |
Claims
What is claimed:
1. A cleaning solution for removing photoresist material comprising
water (H.sub.2O) as main component and one or more surfactants as
additive selected from the group consisting of polyoxyalkylene
compounds, a salt of alcohol amine of Formula 1 and hydrocarbon
compounds having carboxylic acid (--COOH) group, a salt of alcohol
amine of Formula 1 and hydrocarbon compounds having sulfonic acid
(--SO.sub.3H) group, polyethylene glycol compounds of Formula 2,
compounds of Formula 3, compounds having a molecular weight ranging
from 1000 to 10000 including repeating unit of Formula 4 and
polyether denatured silicon compounds, 8wherein R.sub.1 and R.sub.2
are selected from the group consisting of hydrogen,
C.sub.1-C.sub.10 alkyl and C.sub.1-C.sub.10 alkyl alcohol; l is an
integer ranging from 1 to 10. 9wherein m is an integer ranging from
1 to 500; and number average molecular weight ranges from 62 to
20000. 10wherein R.sub.3 and R.sub.4 are selected from the group
consisting of hydrogen, C.sub.1-C.sub.10 alkyl, aryl, asin,
C.sub.1-C.sub.10 aminoalkyl, aminoaryl, carboxylic acid group or
sulfonic acid group; R.sub.5 is amino group, hydroxyl group,
C.sub.1-C.sub.10 alkyl, aryl, asin, aminoalkyl, aminoaryl,
carboxylic acid group or sulfonic acid group; A is C.sub.1-C.sub.5
alkylene or C.sub.3-C.sub.10 aromatic hydrocarbon; and n is an
integer ranging from 0 to 2. 11
2. The cleaning solution according to claim 1, further comprising
at least one alcohol compound.
3. The cleaning solution according to claim 2, wherein the
surfactant is present in an amount ranging from 0.001 to 5 wt % and
the alcohol compound is present in an amount ranging from 0.01 to
10 wt %.
4. The cleaning solution according to claim 3, wherein the
surfactant is present in an amount ranging from 0.3 to 5 wt % and
at least one alcohol compound is present in an amount ranging from
1.7 to 10 wt %.
5. The cleaning solution according to claim 1, wherein the
polyoxyalkylene compounds are selected from the group consisting
of: 1) polyoxyethylene alkylphenyl ether; 2) polyoxyethylene alkyl
ether; 3) polyoxyethylene glycol fatty acid ester; 4)
poly(oxypropylene-oxyethylene) block copolymer; 5) polyoxyalkylene
compounds usable as antifoaming agent 6) polyoxyethylene alkylamine
ether; 7) copolymer of polyoxyalkylene glycol monoalkyl ether
poly(oxypropylene -oxyethylene) glycol; and 8) combinations
thereof.
6. The cleaning solution according to claim 5, wherein the
polyoxyethylene alkylphenyl ether is selected from the group
consisting of polyoxyethylene nonylphenyl ether, polyoxyethylene
octylphenyl ether and combinations thereof.
7. The cleaning solution according to claim 5, wherein the
polyoxyethylene alkyl ether is selected from the group consisting
of polyoxyethylene lauryl ether, polyoxyethylene oleyl ether,
polyoxyethylene cetyl ether, polyoxyethylene cetyl-stearyl ether,
polyoxyethylene stearyl ether, polyoxyethylene octyl ether,
polyoxyethylene tridecyl ether and combinations thereof.
8. The cleaning solution according to claim 5, wherein the
polyoxyethylene glycol fatty acid ester is selected from the group
consisting of polyoxyethylene monolaurate, polyoxyethylene
monoolerate, polyoxyethylene monostearate, polyoxyethylene lanolin,
polyoxyethylene castor oil and combinations thereof.
9. The cleaning solution according to claim 5, wherein the
polyoxyalkylene compounds usable as antifoaming agent is selected
from the group consisting of polyoxyethylene glycol copolymer,
poly(oxyethylene-oxypropy- lene) glycol copolymer, poly alkyl
ether, polyoxyalkylene triol and combinations thereof.
10. The cleaning solution according to claim 5, wherein the
polyoxyethylene alkylamine ether is selected from the group
consisting of polyoxyethylene laurylamine ether, polyoxyethylene
stearylamine ether and combinations thereof.
11. The cleaning solution according to claim 1, wherein the alcohol
amine of Formula 1 is selected from the group consisting of
monoethanol amine, diethanol amine, triethanol amine, and
combinations thereof.
12. The cleaning solution according to claim 1, wherein the
hydrocarbon compound having carboxylic acid group and the
hydrocarbon compound having sulfonic acid group are compounds of
C.sub.2-C.sub.500.
13. The cleaning solution according to claim 12, wherein the
hydrocarbon compound having carboxylic acid group is selected from
the group consisting of acetic acid, tetracosanoic acid, linoleic
acid, oleic acid, stearic acid and combinations thereof.
14. The cleaning solution according to claim 12, wherein the
hydrocarbon compound having sulfonic acid group is selected from
the group consisting of lignosulfonic acid, methanesulfonic acid,
p-toluenesulfonic acid and combinations thereof.
15. The cleaning solution according to claim 1, wherein the
compound of Formula 3 is selected from the group consisting of
sulfamide, sulfadiazine, sulfanilamide, sulfamic acid, sulfanilic
acid and sulfasalazine.
16. The cleaning solution according to claim 1, wherein the
compound including repeating unit of Formula 4 is selected from the
group consisting of glucose, glucuronamide, glucuronic acid,
sucrose, lactose, lactitol and combinations thereof.
17. The cleaning solution according to claim 1, wherein the
polyether denatured silicon compound has a molecular weight ranging
from 1000 to 10000.
18. The cleaning solution according to claim 17, wherein the
polyether denatured silicon compound comprises repeating unit of
Formula 5. 12wherein X is selected from the group consisting of
CH.sub.3, C.sub.2-C.sub.500 polyether, alcohol and ammonium salt; Y
is H, CH.sub.3, C.sub.2-C.sub.500 polyether, alcohol or ammonium
salt; and o is an integer ranging from 1 to 200.
19. The cleaning solution according to claim 1, wherein the
polyether denatured silicon compound is represented by Formula 5a:
13wherein X is C.sub.2-C.sub.500 polyether, alcohol or ammonium
salt; and p and q individually are an integer ranging from 1 to
100.
20. The cleaning solution according to claim 19, wherein the X is
selected from the group consisting of Formulas 6, 7, 8a and 8b:
Formula
6--(CH.sub.2O).sub.a(C.sub.2H.sub.4O).sub.b(C.sub.3H.sub.6O).sub.cR;Formu-
la 7--CH.sub.2(CR'.sub.2)OH;Formula
8a--(CH.sub.2).sub.dN.sup.+(R").sub.2B- ; andFormula
8b--N.sup.+(R")3B.wherein R, R' and R" individually are hydrogen or
a C.sub.1-C.sub.100 alkyl; B is CH.sub.2COO or a halogen; a, b and
c individually are an integer ranging from 1 to 100; and d is an
integer ranging from 1 to 10.
21. The cleaning solution according to claim 2, wherein the alcohol
compound is selected from the group consisting of C.sub.1-C.sub.10
alkyl alcohol, C.sub.1-C.sub.10 alkoxyalcohol and combinations
thereof.
22. The cleaning solution according to claim 21, wherein the
C.sub.1-C.sub.10 alkyl alcohol is selected from the group
consisting of methanol, ethanol, propanol, isopropanol, n-butanol,
sec-butanol, t-butanol, 1-pentanol, 2-pentanol, 3-pentanol,
2,2-dimethyl-1-propanol and combinations thereof.
23. The cleaning solution according to claim 21, wherein the
C.sub.1-C.sub.10 alkoxyalcohol is selected from the group
consisting of 2-methoxyethanol, 2-(2-methoxyethoxy)ethanol,
1-methoxy-2-propanol, 3-methoxy-1,2-propanediol and combinations
thereof.
24. The cleaning solution according to claim 1, wherein the
cleaning solutions are selected from the group consisting of the
solution consisting of polyoxyethylene nonylphenyl ether,
isopropanol and water; the solution consisting of polyoxyethylene
lauryl ether, isopropanol and water; the solution consisting of
polyoxyethylene monolaurate, isopropanol and water; the solution
consisting of polyoxyethylene triol, isopropanol and water; the
solution consisting of polyoxyethylene triol, methanol and water;
the solution consisting of monoethanol amine-tetracosanoic acid
salt, isopropanol and water; the solution consisting of triethanol
amine-linoleic acid salt, ethanol and water; the solution
consisting of triethanol amine-acetic acid salt, isopropanol and
water; the solution consisting of diethanol amine-stearic acid
salt, 1-pentanol and water; the solution consisting of triethanol
amine-oleic acid salt, methanol and water; the solution consisting
of monoethanol amine-lignosulfonic acid salt, isopropanol and
water; the solution consisting of triethanol amine-methanesulfonic
acid salt, ethanol and water; the solution consisting of triethanol
amine-p-toluenesulfonic acid salt, isopropanol and water; the
solution consisting of diethanol amine-lignosulfonic acid salt,
1-pentanol and water; the solution consisting of triethanol
amine-lignosulfonic acid salt, methanol and water; the solution
consisting of the compound of Formula 2 having number average
molecular weight of 200, isopropanol and water; the solution
consisting of the compound of Formula 2 having number average
molecular weight of 1000, ethanol and water; the solution
consisting of tetraethylene glycol, isopropanol and water; the
solution consisting of the compound of Formula 2 having number
average molecular weight of 1450, 1-pentanol and water; the
solution consisting of sulfasalazine, isopropanol and water; the
solution consisting of sulfanilic acid, ethanol and water; the
solution consisting of sulfamic acid, isopropanol and water; the
solution consisting of sulfanilamide, 1-pentanol and water; the
solution consisting of glucose, isopropanol and water; the solution
consisting of glucuronic acid, ethanol and water; the solution
consisting of lactose, isopropanol and water; the solution
consisting of lactitol, 1-pentanol and water; the solution
consisting of the polyether denatured silicon compound of Formula
5a wherein X is CH.sub.2CH.sub.2OCH.sub.2CH.sub.2OCH.sub.3,
isopropanol and water; the solution consisting of the polyether
denatured silicon compound of Formula 5a wherein X is
CH.sub.2CH.sub.2OH, ethanol and water; the solution consisting of
the polyether denatured silicon compound of Formula 5a wherein X is
(CH.sub.2).sub.3N.sup.+(CH.sub.3).sub.2CH.sub.2CO- O.sup.-,
isopropanol and water; and the solution consisting of the polyether
denatured silicon compound of Formula 5a wherein X is
(CH.sub.2).sub.3N.sup.+(CH.sub.3).sub.2CH.sub.2COO.sup.-,
1-pentanol and water. 14wherein p and q individually are an integer
ranging from 1 to 100.
25. A method of forming photoresist patterns, comprising: (a)
forming a photoresist film by coating photoresist on a top portion
of an underlying layer formed on a semiconductor substrate; (b)
exposing the photoresist film; (c) developing the exposed
photoresist film using a developer; and (d) cleaning the resultant
structure using the cleaning solution of claim 1.
26. The method according to claim 25, further comprising the step
of performing a soft-bake process before part (b) and a post-bake
process after part (b).
27. The method according to claim 25, wherein an exposure source of
part (b) is selected from the group consisting of KrF, ArF, VUV,
EUV, E-beam, X-ray and ion-beam.
28. A semiconductor device fabricated using the method of claim 25.
Description
BACKGROUND
[0001] 1. Technical Field
[0002] A cleaning solution is disclosed for removing photoresist
resins used in cleaning semiconductor substrates during the last
process after development. More specifically, a cleaning solution
for removing photoresist is disclosed that comprises water
(H.sub.2O) as main component, one or more surfactants as additive
selected from the group consisting of polyoxyalkylene compounds, a
salt of alcohol amine of Formula 1 and hydrocarbon compounds having
carboxylic acid (--COOH) group, a salt of alcohol amine of Formula
1 and hydrocarbon compounds having sulfonic acid (--SO.sub.3H)
group, polyethylene glycol compounds, compounds of Formula 3,
compounds having a molecular weight ranging from 1000 to 10000
including repeating unit of Formula 4 and polyether denatured
silicon compounds and alcohol compounds.
[0003] 2. Description of the Related Art
[0004] As devices are getting minute, photoresist patterns have a
higher aspect ratio (i.e. the ratio of the thickness of
photoresist, or height to the linewidth of formed pattern).
[0005] When the height of formed photoresist patterns goes beyond
critical height, capillary force exceeds elasticity of photoresist,
thereby resulting in erosion of patterns during a cleaning
process
[0006] In order to overcome this problem, adhesive force between
underlying layers and photoresist is enhanced by increasing inner
elasticity of photoresist or decreasing surface tension
thereof.
[0007] Generally, a method of forming photoresist patterns on
semiconductor substrates comprises the steps of:
[0008] forming an underlying layer on a semiconductor
substrate;
[0009] forming a photoresist film on the underlying layer; and
[0010] forming a photoresist pattern by exposing a portion of the
underlying layer using exposing and developing processes.
[0011] Here, in case of a positive photoresist film, a photoresist
film of an exposing region is removed by developer and then a
photoresist pattern is formed.
[0012] As described above, after the photoresist pattern is
developed, the remaining photoresist film on the semiconductor
substrate is removed by dispersing distilled water to the
semiconductor substrate from a top portion of spin device. Here,
the pattern is eroded due to high surface tension of distilled
water.
[0013] The conventional cleaning solution comprised anion
surfactant in order to prevent the collapse of photoresist patterns
having high aspect ratio. For example, U.S. Pat. No. 6,451,565
describes that the cleaning solution included anion surfactant
having fluorine and deionized water to prevent the collapse of such
patterns
SUMMARY OF THE DISCLOSURE
[0014] A cleaning solution for removing photoresist material is
disclosed which decrease surface tension to prevent the collapse of
photoresist patterns.
[0015] A method of forming photoresist patterns is also disclosed
which uses the disclosed cleaning solution for removing photoresist
material.
[0016] A semiconductor device produced by using the above-described
method is also disclosed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIGS. 1 through 15 are photographs of photoresist patterns
obtained from Examples 32 through 46.
[0018] FIGS. 16 and 17 are photographs of photoresist patterns
obtained from Example 47.
[0019] FIGS. 18 through 24 are photographs of photoresist patterns
obtained from Examples 48 through 54.
[0020] FIGS. 25 and 26 are photographs of photoresist patterns
obtained from Example 55.
[0021] FIGS. 27 through 33 are photographs of photoresist patterns
obtained from Examples 56 through 62.
[0022] FIG. 34 is photographs of photoresist patterns obtained from
Comparative Example 1.
DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS
[0023] A disclosed cleaning solution for removing photoresist
material comprises water (H.sub.2O) as main component and one or
more surfactants as additive selected from the group consisting of
polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and
hydrocarbon compounds having carboxylic acid (--COOH) group, a salt
of alcohol amine of Formula 1 and hydrocarbon compounds having
sulfonic acid (--SO.sub.3H) group, polyethylene glycol compounds of
Formula 2, compounds of Formula 3, compounds having a molecular
weight ranging from 1000 to 10000 including repeating unit of
Formula 4 and polyether denatured silicon compounds. 2
[0024] wherein,
[0025] R.sub.1 and R.sub.2 are hydrogen, C.sub.1-C.sub.10 alkyl and
C.sub.1-C.sub.10 alkyl alcohol; and
[0026] l is an integer ranging from 1 to 10; 3
[0027] wherein,
[0028] m is an integer ranging from 1 to 500; and
[0029] number average molecular weight ranges from 62 to 20000;
4
[0030] wherein,
[0031] R.sub.3 and R.sub.4 are hydrogen, C.sub.1-C.sub.10 alkyl,
aryl, asin, C.sub.1-C.sub.10 aminoalkyl, aminoaryl, carboxylic acid
group or sulfonic acid group;
[0032] R.sub.5 is amino group, hydroxyl group, C.sub.1-C.sub.10
alkyl, aryl, asin, aminoalkyl, aminoaryl, carboxylic acid group or
sulfonic acid group;
[0033] A is C.sub.1-C.sub.5 alkylene or C.sub.3-C.sub.10aromatic
hydrocarbon; and
[0034] n is an integer ranging from 0 to 2; 5
[0035] The cleaning solution further comprises alcohol
compounds.
[0036] Here, the surfactant is present in an amount ranging from
about 0.001 to about 5 wt %, preferably, ranging from 0.3 to 5 wt %
of the whole cleaning solution. The alcohol compound is present in
an amount ranging from 0.01 to 10 wt %, preferably, ranging from
1.7 to 10 wt % of the whole cleaning solution.
[0037] When the surfactant of below 0.001 wt % is added in the
cleaning solution, the effect of reducing the surface tension is
degraded. When the surfactant of over 5 wt % is added in the
cleaning solution, the effect of reducing the surface tension is
also degraded in spite of the added amount. Additionally, the used
surfactant may remain sediments on wafers.
[0038] When the alcohol compound of below 0.01 wt % is added in the
cleaning solution, the effect of reducing the surface tension is
degraded. When the alcohol compound of over 10 wt % is added in the
cleaning solution, the alcohol compound itself dissolves
photosensitizer, thereby collapsing patterns.
[0039] The polyoxyalkylene compounds as nonionic surfactants not
ionized but dissolved in water have excellent effect in
emulsification, dispersion and penetration. Additionally, the
polyoxyalkylene compounds have higher hydrophilicity as they have
more additional portions. However, penetration, detergency,
emulsifying dispersion force and foamability are changed according
to kinds of hydrophobic portions used as base material.
[0040] Due to excellent chemical resistance, the polyoxyalkylene
compounds are stable in acid and alkali solution, and have
excellent interfacial activity in aqueous solution consisting of
acid, alkali and saline, as well.
[0041] The polyoxyalkylene compounds are effective due to good
compatibility with cationic, anionic and other nonionic
surfactants, and excellent foamability even when a small amount of
the compounds are used. Due to the above described advantages, the
polyoxyalkylene compounds are commonly used as cleaning,
penetrating, wetting, emulsifying dispersion, foaming and
antifoaming agents in industry such as textiles, paper manufacture,
agricultural medicines, medical supplies, gum, paint, resins and
metalworking fields.
[0042] The polyoxyalkylene compounds are selected from the group
consisting of:
[0043] 1) polyoxyethylene alkylphenyl ether;
[0044] 2) polyoxyethylene alkyl ether;
[0045] 3) polyoxyethylene glycol fatty acid ester;
[0046] 4) poly(oxypropylene-oxyethylene) block copolymer;
[0047] 5) polyoxyalkylene compounds usable as antifoaming agent
[0048] 6) polyoxyethylene alkylamine ether;
[0049] 7) copolymer of polyoxyalkylene glycol monoalkyl ether
poly(oxypropylene-oxyethylene) glycol; and
[0050] 8) combinations thereof.
[0051] It is preferable that the polyoxyethylene alkylphenyl ether
is selected from the group consisting of polyoxyethylene
nonylphenyl ether, polyoxyethylene octylphenyl ether and
combinations thereof.
[0052] It is preferable that the polyoxyethylene alkyl ether is
selected from the group consisting of polyoxyethylene lauryl ether,
polyoxyethylene oleyl ether, polyoxyethylene cetyl ether,
polyoxyethylene cetylstearyl ether, polyoxyethylene stearyl ether,
polyoxyethylene octyl ether, polyoxyethylene tridecyl ether and
combinations thereof.
[0053] It is preferable that the polyoxyethylene glycol fatty acid
ester is selected from the group consisting of polyoxyethylene
monolaurate, polyoxyethylene monoolerate, polyoxyethylene
monostearate, polyoxyethylene lanolin, polyoxyethylene castor oil
and combinations thereof.
[0054] It is preferable that the polyoxyalkylene compounds usable
as antifoaming agent is selected from the group consisting of
polyoxyethylene glycol copolymer, poly(oxyethylene-oxypropylene)
glycol copolymer, poly alkyl ether, polyoxyalkylene triol and
combinations thereof.
[0055] It is preferable that the polyoxyethylene alkylamine ether
is selected from the group consisting of polyoxyethylene
laurylamine ether, polyoxyethylene stearylamine ether and
combinations thereof.
[0056] The salt of alcohol amine of Formula 1 and hydrocarbon
compounds having carboxylic acid group such as fatty acid and the
salt of alcohol amine of Formula 1 and hydrocarbon compounds having
sulfonic acid group has excellent interfacial activity, low pH in
comparison with insoluble metal soap formed of metal salt except
alkali metal salt and detergency and stability in neutrality,
thereby used as detergent or emulsifier due to high solubility in
water and organic solvent.
[0057] The alcohol amine of Formula 1, ethanol amine, is selected
from the group consisting of monoethanol amine, diethanol amine and
triethanol amine.
[0058] The hydrocarbon compounds having carboxylic acid group are
compounds of C.sub.2-C.sub.500. It is preferable that the
hydrocarbon compound having carboxylic acid group is selected from
the group consisting of acetic acid, tetracosanoic acid, linoleic
acid, oleic acid, stearic acid and combinations thereof.
[0059] The hydrocarbon compounds having sulfonic acid group are
compounds of C.sub.2-C.sub.500. It is preferable that the
hydrocarbon compound having sulfonic acid group is selected from
the group consisting of lignosulfonic acid, methanesulfonic acid,
p-toluenesulfonic acid and combinations thereof.
[0060] The polyethylene glycol compounds of Formula 2 includes an
lipophilic group such as the alkylene group having a long chain
form and a hydrophilic group such as the hydroxy group in
molecules, thereby deteriorating surface tension. The polyethylene
glycol does not harm to lips or skin because it has little toxicity
and irritation. Accordingly, the polyethylene glycol compounds are
suitable for surfactant.
[0061] Additionally, the polyethylene glycol compounds are
transformed from liquid into solid state such as paste or wax type
as average molecular weight increases. If average molecular weight
more increases, the polyethylene glycol compounds are transformed
into white flake phase, which are soluble in water regardless of
liquid or solid states. A polyethylene glycol having a random form
can be fabricated when mixed with a proper ratio.
[0062] Accordingly, the polyethylene glycol compounds may be used
solely or by mixture because these compounds are soluble in water
regardless of liquid having low molecular weight or solid states
having high molecular weight and mixed each other.
[0063] The sulfa-imide compound of Formula 3 having solubility
higher than carboxylic acid group to water as solvent, is
preferably selected from the group consisting of sulfamide,
sulfadiazine, sulfanilamide, sulfamic acid, sulfanilic acid and
sulfasalazine. Here, the compounds except sulfanilic acid are sulfa
amide compounds of Formula 1 wherein n is 0.
[0064] The compound having a molecular weight ranging from 1000 to
10000 including repeating unit of Formula 4 is selected from the
group consisting of glucose, glucuronamide, glucuronic acid,
sucrose, lactose, lactitol and combinations thereof.
[0065] The compound including repeating unit of Formula 4 is
soluble in water, and remarkably lowers the surface tension of
aqueous solution. The compound does not harm to lips or skin
because it has little toxicity and irritation. As a result, the
compound is used as additive for lowering surface tension.
[0066] Preferably, the polyether denatured silicon compound has a
molecular weight ranging from 1000 to 10000. It is preferable that
the polyether denatured silicon compounds comprise the repeating
unit of Formula 5. 6
[0067] wherein
[0068] X is CH.sub.3, C.sub.2-C.sub.500 polyether, alcohol or
ammonium salt;
[0069] Y is H, CH.sub.3, C.sub.2-C.sub.500 polyether, alcohol or
ammonium salt; and o is an integer ranging from 1 to 200.
[0070] As an example, the polyether denatured silicon compounds are
represented by Formula 5a: 7
[0071] wherein,
[0072] X is C.sub.2-C.sub.500 polyether, alcohol or ammonium salt;
and
[0073] p and q individually are an integer ranging from 1 to
100.
[0074] Here, it is preferable that the X is selected from the group
consisting of polyether of Formula 6, alcohol of Formula 7 and
ammonium salt of Formulas 8a and 8b:
[0075] Formula 6
--(CH.sub.2O).sub.a(C.sub.2H.sub.4O).sub.b(C.sub.3H.sub.6O).sub.cR;
[0076] Formula 7
--CH.sub.2(CR'.sub.2)OH;
[0077] Formula 8a
--(CH.sub.2).sub.dN.sup.+(R").sub.2B; and
[0078] Formula 8b
--N.sup.+(R").sub.3B.
[0079] wherein,
[0080] R, R' and R" individually are hydrogen or C.sub.1-C.sub.100
alkyl; B is CH.sub.2COO or halogen;
[0081] a, b and c individually are an integer ranging from 1 to
100; and
[0082] d is an integer ranging from 1 to 10;
[0083] A typical example of Formula 8a is
--(CH.sub.2).sub.3N.sup.+(CH.sub- .3).sub.2CH.sub.2COO.sup.- and a
typical example of Formula 8b is
--N.sup.+(CH.sub.3).sub.3Cl.sup.-.
[0084] The polyether denatured silicon compounds having low
molecular weight may remarkably lower surface tension of aqueous
solution and have a low solidifying point. However, because the
surface tension of aqueous solution is influenced by pH, activity
may be lowered when beyond the optimum pH lowering surface
tension.
[0085] The alcohol compound is selected from the group consisting
of C.sub.1-C.sub.10 alkyl alcohol, C.sub.1-C.sub.10 alkoxyalcohol
and combinations thereof. It is preferable that the
C.sub.1-C.sub.10 alkyl alcohol is selected from the group
consisting of methanol, ethanol, propanol, isopropanol, n-butanol,
sec-butanol, t-butanol, 1-pentanol, 2-pentanol, 3-pentanol,
2,2-dimethyl-1-propanol and combinations thereof.
[0086] It is preferable that the C.sub.1-C.sub.10 alkoxyalcohol is
selected from the group consisting of 2-methoxyethanol,
2-(2-methoxyethoxy)ethanol, 1-methoxy-2-propanol,
3-methoxy-1,2-propanedi- ol and combinations thereof.
[0087] It is preferable that distilled water is used as water of
the cleaning solution.
[0088] The cleaning solution of the present invention is fabricated
by filtering the mixed solutions of alcohol compound, water and
surfactant through 0.2 .mu.m filter.
[0089] A method of forming photoresist patterns using an etching
and developing process comprises:
[0090] (a) forming a photoresist film by coating photoresist on a
top portion of an underlying layer formed on a semiconductor
substrate;
[0091] (b) exposing the photoresist film;
[0092] (c) developing the exposed photoresist film using a
developer; and
[0093] (d) cleaning the resultant structure using the cleaning
solution of the present invention.
[0094] The method further comprises performing a soft-bake process
before part (b) step and a post-bake process after part (b). Here,
it is preferable that the bake processes are performed at a
temperature ranging from 70 to 200.degree. C.
[0095] The exposing process (b) is preferable performed using an
exposure source of part (b) selected from the group consisting of
KrF(248 nm), ArF(193 nm), VUV (157 nm), EUV(13 nm), E-beam, X-ray
and ion-beam, with exposing energy ranging from 0.1 to 50
mJ/cm.sup.2.
[0096] The developing process (c) is performed using alkali
developer which is teteramethylammoniumhydroxide (TMAH) aqueous
solution ranging from 0.01 to 5 wt %.
[0097] The cleaning solution has a lowered surface tension through
the cleaning process (d), thereby preventing erosion of patterns
during the developing process.
[0098] A semiconductor device manufactured using the method
according to the present invention is also disclosed.
[0099] The disclosed cleaning solution will be described in more
details by referring to examples below, which are not intended to
be limiting.
Preparation of Cleaning Solution
EXAMPLE 1
[0100] Preparation of Cleaning Solution (1)
[0101] Polyoxyethylene nonylphenyl ether (1 g), isopropanol (4 g)
and water (95 g) were stirred for 1 minute. The resulting mixture
was filtered through 0.2 .mu.m filter to obtain cleaning solution
of the present invention.
EXAMPLE 2
[0102] Preparation of Cleaning Solution (2)
[0103] Polyoxyethylene lauryl ether (1 g), isopropanol (4 g) and
water (95 g) were stirred for 1 minute. The resulting mixture was
filtered through 0.2 .mu.m filter to obtain cleaning solution of
the present invention.
EXAMPLE 3
[0104] Preparation of Cleaning Solution (3)
[0105] Polyoxyethylene monolaurate (1 g), isopropanol (4 g) and
water (95 g) were stirred for 1 minute. The resulting mixture was
filtered through 0.2 .mu.m filter to obtain cleaning solution of
the present invention.
EXAMPLE 4
[0106] Preparation of Cleaning Solution (4)
[0107] Polyoxyethylene triol (1 g), isopropanol (4 g) and water (95
g) were stirred for 1 minute. The resulting mixture was filtered
through 0.21 .mu.m filter to obtain cleaning solution of the
present invention.
EXAMPLE 5
[0108] Preparation of Cleaning Solution (5)
[0109] Polyoxyethylene triol (1 g), methanol (4 g) and water (95 g)
were stirred for 1 minute. The resulting mixture was filtered
through 0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 6
[0110] Preparation of Cleaning Solution (6)
[0111] Monoethanol amine-tetracosanoic acid (1:1 mol %) salt (1 g),
isopropanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 7
[0112] Preparation of Cleaning Solution (7)
[0113] Triethanol amine-linoleic acid (1:1 mol %) salt (1 g),
ethanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 8
[0114] Preparation of Cleaning Solution (8)
[0115] Triethanol amine-acetic acid (1:1 mol %) salt (1 g),
isopropanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 9
[0116] Preparation of Cleaning Solution (9)
[0117] Diethanol amine-stearic acid (1:1 mol %) salt (1 g),
1-pentanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 10
[0118] Preparation of Cleaning Solution (10)
[0119] Triethanol amine-oleic acid (1:1 mol %) salt (1 g), methanol
(4 g) and water (95 g) were stirred for 1 minute. The resulting
mixture was filtered through 0.2 .mu.m filter to obtain cleaning
solution of the present invention.
EXAMPLE 11
[0120] Preparation of Cleaning Solution (11)
[0121] Monoethanol amine-lignosulfonic acid (1:1 mol %) salt (1 g),
isopropanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 12
[0122] Preparation of Cleaning Solution (12)
[0123] Triethanol amine-methanesulfonic acid (1:1 mol %) salt (1
g), ethanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 13
[0124] Preparation of Cleaning Solution (13)
[0125] Triethanol amine-p-toluenesulfonic acid (1:1 mol %) salt (1
g), isopropanol (4 g) and water (95 g) were stirred for 1 minute.
The resulting mixture was filtered through 0.2 .mu.m filter to
obtain cleaning solution of the present invention.
EXAMPLE 14
[0126] Preparation of Cleaning Solution (14)
[0127] Diethanol amine-lignosulfonic acid (1:1 mol %) salt (1 g),
1-pentanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 15
[0128] Preparation of Cleaning Solution (15)
[0129] Triethanol amine-lignosulfonic acid (1:1 mol %) salt (1 g),
methanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 16
[0130] Preparation of Cleaning Solution (16)
[0131] The compound of Formula 2 having number average molecular
weight of 200 (0.5 g), isopropanol (4 g) and water (95 g) were
stirred for 1 minute. The resulting mixture was filtered through
0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 17
[0132] Preparation of Cleaning Solution (17)
[0133] The compound of Formula 2 having number average molecular
weight of 1000 (0.5 g), ethanol (4 g) and water (95 g) were stirred
for 1 minute. The resulting mixture was filtered through 0.2 .mu.m
filter to obtain cleaning solution of the present invention.
EXAMPLE 18
[0134] Preparation of Cleaning Solution (18)
[0135] Tetraethylene glycol (0.5 g), isopropanol (4 g) and water
(95 g) were stirred for 1 minute. The resulting mixture was
filtered through 0.2 .mu.m filter to obtain cleaning solution of
the present invention.
EXAMPLE 19
[0136] Preparation of Cleaning Solution (19)
[0137] The compound of Formula 2 having number average molecular
weight of 1450 (0.5 g), 1-pentanol (4 g) and water (95 g) were
stirred for 1 minute. The resulting mixture was filtered through
0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 20
[0138] Preparation of Cleaning Solution (20)
[0139] Sulfasalazine (0.5 g), isopropanol (4 g) and water (95 g)
were stirred for 1 minute. The resulting mixture was filtered
through 0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 21
[0140] Preparation of Cleaning Solution (21)
[0141] Sulfanilic acid (0.5 g), ethanol (4 g) and water (95 g) were
stirred for 1 minute. The resulting mixture was filtered through
0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 22
[0142] Preparation of Cleaning Solution (22)
[0143] Sulfamic acid (0.5 g), isopropanol (4 g) and water (95 g)
were stirred for 1 minute. The resulting mixture was filtered
through 0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 23
[0144] Preparation of Cleaning Solution (23)
[0145] Sulfanilamide (0.5 g), 1-pentanol (4 g) and water (95 g)
were stirred for 1 minute. The resulting mixture was filtered
through 0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 24
[0146] Preparation of Cleaning Solution (24)
[0147] Glucose (0.5 g), isopropanol (4 g) and water (95 g) were
stirred for 1 minute. The resulting mixture was filtered through
0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 25
[0148] Preparation of Cleaning Solution (25)
[0149] Glucuronic acid (0.5 g), ethanol (4 g) and water (95 g) were
stirred for 1 minute. The resulting mixture was filtered through
0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 26
[0150] Preparation of Cleaning Solution (26)
[0151] Lactose (0.5 g), isopropanol (4 g) and water (95 g) were
stirred for 1 minute. The resulting mixture was filtered through
0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 27
[0152] Preparation of Cleaning Solution (27)
[0153] Lactitol (0.5 g), 1-pentanol (4 g) and water (95 g) were
stirred for 1 minute. The resulting mixture was filtered through
0.2 .mu.m filter to obtain cleaning solution of the present
invention.
EXAMPLE 28
[0154] Preparation of Cleaning Solution (28)
[0155] The compound of Formula 5a wherein X is
CH.sub.2CH.sub.2OCH.sub.2CH- .sub.2OCH.sub.3 (1 g), isopropanol (4
g) and water (95 g) were stirred for 1 minute. The resulting
mixture was filtered through 0.2 .mu.m filter to obtain cleaning
solution of the present invention.
EXAMPLE 29
[0156] Preparation of Cleaning Solution (29)
[0157] The compound of Formula 5a wherein X is CH.sub.2CH.sub.2OH
(1 g), ethanol (4 g) and water (95 g) were stirred for 1 minute.
The resulting mixture was filtered through 0.2 .mu.m filter to
obtain cleaning solution of the present invention.
EXAMPLE 30
[0158] Preparation of Cleaning Solution (30)
[0159] The compound of Formula 5a wherein X is
(CH.sub.2).sub.3N.sup.+(CH.- sub.3).sub.2CH.sub.2COO.sup.-(1 g),
isopropanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
EXAMPLE 31
[0160] Preparation of Cleaning Solution (31)
[0161] The compound of Formula 5a wherein X is
(CH.sub.2).sub.3N.sup.+(CH.- sub.3).sub.2CH.sub.2COO.sup.-(1 g),
1-pentanol (4 g) and water (95 g) were stirred for 1 minute. The
resulting mixture was filtered through 0.2 .mu.m filter to obtain
cleaning solution of the present invention.
Formation of Patterns Using the Cleaning Solution
EXAMPLE 32
[0162] Formation of Photoresist Patterns (1)
[0163] After an underlying layer was formed on a silicon wafer
treated with hexamethyldisilazane (HMDS), a photoresist having
methacrylate type, AX1020P produced by Clariant Co., was
spin-coated on silicon wafer at 3000 rpm to form a photoresist
film, and soft-backed at about 120.degree. C. for about 90 seconds.
After soft-baking, the photoresist was exposed to light using an
ArF laser exposer, and then post-baked at about 120.degree. C. for
about 90 seconds. When the post-baking was completed, it was
developed in 2.38 wt % aqueous teteramethylammoniumhydroxide
solution for 30 seconds. While the silicon wafer was spun, the
silicon wafer was cleaned by spraying the cleaning solution of 30
ml prepared in Example 1 from the spin device and then dried, to
obtain 83 nm Line pattern (see FIG. 1).
EXAMPLE 33
[0164] Formation of Photoresist Patterns (2)
[0165] The procedure of Example 32 was repeated using the cleaning
solution of Example 2 instead of the cleaning solution of Example 1
to obtain the pattern of 90 nm Line pattern (see FIG. 2).
EXAMPLE 34
[0166] Formation of Photoresist Patterns (3)
[0167] The procedure of Example 32 was repeated using the cleaning
solution of Example 3 instead of the cleaning solution of example 1
to obtain the pattern of 93 nm Line pattern (see FIG. 3).
EXAMPLE 35
[0168] Formation of Photoresist Patterns (4)
[0169] The procedure of Example 32 was repeated using the cleaning
solution of Example 4 instead of the cleaning solution of example 1
to obtain the pattern of 92 nm Line pattern (see FIG. 4).
EXAMPLE 36
[0170] Formation of Photoresist Patterns (5)
[0171] The procedure of Example 32 was repeated using the cleaning
solution of Example 5 instead of the cleaning solution of example 1
to obtain the pattern of 87 nm Line pattern (see FIG. 5).
EXAMPLE 37
[0172] Formation of Photoresist Patterns (6)
[0173] The procedure of Example 32 was repeated using the cleaning
solution of Example 6 instead of the cleaning solution of example 1
to obtain the pattern of 83 nm Line pattern (see FIG. 6).
EXAMPLE 38
[0174] Formation of Photoresist Patterns (7)
[0175] The procedure of Example 32 was repeated using the cleaning
solution of Example 7 instead of the cleaning solution of example 1
to obtain the pattern of 90 nm Line pattern (see FIG. 7).
EXAMPLE 39
[0176] Formation of Photoresist Patterns (8)
[0177] The procedure of Example 32 was repeated using the cleaning
solution of Example 8 instead of the cleaning solution of example 1
to obtain the pattern of 87 nm Line pattern (see FIG. 8).
EXAMPLE 40
[0178] Formation of Photoresist Patterns (9)
[0179] The procedure of Example 32 was repeated using the cleaning
solution of Example 9 instead of the cleaning solution of example 1
to obtain the pattern of 92 nm Line pattern (see FIG. 9).
EXAMPLE 41
[0180] Formation of Photoresist Patterns (10)
[0181] The procedure of Example 32 was repeated using the cleaning
solution of Example 10 instead of the cleaning solution of example
1 to obtain the pattern of 87 nm Line pattern (see FIG. 10).
EXAMPLE 42
[0182] Formation of Photoresist Patterns (11)
[0183] The procedure of Example 32 was repeated using the cleaning
solution of Example 11 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 11).
EXAMPLE 43
[0184] Formation of Photoresist Patterns (12)
[0185] The procedure of Example 32 was repeated using the cleaning
solution of Example 12 instead of the cleaning solution of example
1 to obtain the pattern of 98 nm Line pattern (see FIG. 12).
EXAMPLE 44
[0186] Formation of Photoresist Patterns (13)
[0187] The procedure of Example 32 was repeated using the cleaning
solution of Example 13 instead of the cleaning solution of example
1 to obtain the pattern of 105 nm Line pattern (see FIG. 13).
EXAMPLE 45
[0188] Formation of Photoresist Patterns (14)
[0189] The procedure of Example 32 was repeated using the cleaning
solution of Example 14 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 14).
EXAMPLE 46
[0190] Formation of Photoresist Patterns (15)
[0191] The procedure of Example 32 was repeated using the cleaning
solution of Example 15 instead of the cleaning solution of example
1 to obtain the pattern of 99 nm Line pattern (see FIG. 15).
EXAMPLE 47
[0192] Formation of Photoresist Patterns (16)
[0193] The procedure of Example 32 was repeated using the cleaning
solution of Example 16 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIGS. 16 and
17).
EXAMPLE 48
[0194] Formation of Photoresist Patterns (17)
[0195] The procedure of Example 32 was repeated using the cleaning
solution of Example 17 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 18).
EXAMPLE 49
[0196] Formation of Photoresist Patterns (18)
[0197] The procedure of Example 32 was repeated using the cleaning
solution of Example 18 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 19).
EXAMPLE 50
[0198] Formation of Photoresist Patterns (19)
[0199] The procedure of Example 32 was repeated using the cleaning
solution of Example 19 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 20).
EXAMPLE 51
[0200] Formation of Photoresist Patterns (20)
[0201] The procedure of Example 32 was repeated using the cleaning
solution of Example 20 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 21).
EXAMPLE 52
[0202] Formation of Photoresist Patterns (21)
[0203] The procedure of Example 32 was repeated using the cleaning
solution of Example 21 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 22).
EXAMPLE 53
[0204] Formation of Photoresist Patterns (22)
[0205] The procedure of Example 32 was repeated using the cleaning
solution of Example 22 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 23).
EXAMPLE 54
[0206] Formation of Photoresist Patterns (23)
[0207] The procedure of Example 32 was repeated using the cleaning
solution of Example 23 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 24).
EXAMPLE 55
[0208] Formation of Photoresist Patterns (24)
[0209] The procedure of Example 32 was repeated using the cleaning
solution of Example 24 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIGS. 25 and
26).
EXAMPLE 56
[0210] Formation of Photoresist Patterns (25)
[0211] The procedure of Example 32 was repeated using the cleaning
solution of Example 25 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 27).
EXAMPLE 57
[0212] Formation of Photoresist Patterns (26)
[0213] The procedure of Example 32 was repeated using the cleaning
solution of Example 26 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 28).
EXAMPLE 58
[0214] Formation of Photoresist Patterns (27)
[0215] The procedure of Example 32 was repeated using the cleaning
solution of Example 27 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 29).
EXAMPLE 59
[0216] Formation of Photoresist Patterns (28)
[0217] The procedure of Example 32 was repeated using the cleaning
solution of Example 28 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 30).
EXAMPLE 60
[0218] Formation of Photoresist Patterns (29)
[0219] The procedure of Example 32 was repeated using the cleaning
solution of Example 29 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 31).
EXAMPLE 61
[0220] Formation of Photoresist Patterns (30)
[0221] The procedure of Example 32 was repeated using the cleaning
solution of Example 30 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 32).
EXAMPLE 62
[0222] Formation of Photoresist Patterns (31)
[0223] The procedure of Example 32 was repeated using the cleaning
solution of Example 31 instead of the cleaning solution of example
1 to obtain the pattern of 100 nm Line pattern (see FIG. 33).
COMPARATIVE EXAMPLE 1
[0224] Formation of Photoresist Patterns
[0225] The procedure of Example 32 was repeated using distilled
water instead of cleaning solution according to the present
invention to obtain photoresist patterns. The photoresist patterns
are eroded (see FIG. 34).
[0226] As discussed earlier, the cleaning solution for removing
photoresist material according to this disclosure can prevent the
erosion of patterns when semiconductor substrates are cleaned to
obtain photoresist patterns because the cleaning solution has the
lower surface tension than that of distilled water. Accordingly,
the cleaning solution of the present invention may stabilize the
process of forming hyperfine photoresist patterns of below 130
nm.
* * * * *