U.S. patent application number 09/836934 was filed with the patent office on 2002-02-07 for two etchant etch method.
Invention is credited to Chinn, Jeffrey D., Khan, Anisul, Kumar, Ajay, Podlesnik, Dragan.
Application Number | 20020016080 09/836934 |
Document ID | / |
Family ID | 24043753 |
Filed Date | 2002-02-07 |
United States Patent
Application |
20020016080 |
Kind Code |
A1 |
Khan, Anisul ; et
al. |
February 7, 2002 |
Two etchant etch method
Abstract
A two etchant etch method for etching a layer that is part of a
masked structure is described. The method is useful, for example,
in microelectrical mechanical system (MEMS) applications, and in
the fabrication of integrated circuits and other electronic
devices. The method can be used advantageously to optimize a plasma
etch process capable of etching strict profile control trenches
with 89.degree. +/-1.degree. sidewalls in silicon layers formed as
part of a mask structure where the mask structure induces
variations in etch rate. The inventive two etchant etch method
etches a layer in a structure with a first etchant etch until a
layer in a fastest etching region is etched. The layer is then
etched with a second etchant until a layer in a region with a
slowest etch rate is etched. A second etchant may also be selected
to provide sidewall passivation and selectivity to an underlying
layer of the structure.
Inventors: |
Khan, Anisul; (Sunnyvale,
CA) ; Kumar, Ajay; (Sunnyvale, CA) ; Chinn,
Jeffrey D.; (Foster City, CA) ; Podlesnik,
Dragan; (Palo Alto, CA) |
Correspondence
Address: |
Robert W. Mulcahy
Applied Materials, Inc., Patent
P.O. Box 450 A
Santa Clara
CA
95052
US
|
Family ID: |
24043753 |
Appl. No.: |
09/836934 |
Filed: |
April 17, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09836934 |
Apr 17, 2001 |
|
|
|
09513552 |
Feb 25, 2000 |
|
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|
Current U.S.
Class: |
438/714 ;
257/E21.218; 257/E21.312 |
Current CPC
Class: |
H01L 21/32137 20130101;
H01L 21/3065 20130101; B81C 1/00571 20130101; H01L 21/30655
20130101; B81C 2201/0132 20130101; B81B 2203/033 20130101 |
Class at
Publication: |
438/714 |
International
Class: |
H01L 021/302; H01L
021/461 |
Claims
We claim:
1. A method of etching a layer formed over an underlying layer in a
structure, the method comprising the steps of: exposing the
structure to a first etchant that etches a portion of the layer for
a period of time sufficient for a region of the layer with a
fastest etch rate to etch through the layer; and exposing the
structure to a second etchant that etches a portion of the layer
for a period of time sufficient for a region of the layer with a
slowest etch rate to etch the layer.
2. A method according to claim 1 wherein said first etchant
comprises an etchant gas and a passivation gas.
3. A method according to claim 2 wherein said passivation gas
comprises HBr and O.sub.2.
4. A method according to claim 2 wherein said etchant gas provides
about 30 percent of the total gas flow of said first etchant.
4. A method according to claim 2 wherein said etchant gas is
SF.sub.6.
5. A method according to claim 2 wherein said passivation gas
provides about 70 percent of the total gas flow of said first
etchant.
6. A method according to claim 1 wherein the second etchant has a
selectivity to the underlying layer of at least about 35 to 1.
7. A method according to claim 1 wherein about 2 percent to about 5
percent of the second etchant is provided by O.sub.2.
8. A method according to claim 1 wherein said first etchant
consists essentially of SF.sub.6, HBr and O.sub.2 wherein the flow
rate of the O.sub.2 and the flow rate of the HBr are about equal
and the flow rate of the O.sub.2 is greater than the flow rate of
the SF.sub.6.
9. A method according to claim 7 wherein the first etchant
comprises about 34 percent O.sub.2, about 34 percent HBr and about
31 percent SF.sub.6.
10. A method according to claim 1 wherein the first etchant is a
gas mixture having a ratio of the SF.sub.6 flow rate to O.sub.2
flow rate of between about 0.5 to about 1.5 and a ratio of the sum
of the SF.sub.6 flow rate and the O.sub.2 flow rate to the HBr flow
rate of between about 0.2 to about 4.2.
11. A method according to claim 1 wherein said first etchant is a
plasma ignited by providing source RF power and bias RF power to
the first etchant wherein the ratio of said source RF power level
to said bias RF power level is about 35:1.
12. A method according to claim 1 wherein said second etchant is a
plasma with a selectivity to an underlying layer of at least about
35 to 1.
13. A method according to claim 1 wherein said second etchant
includes about 2 percent to about 5 percent O.sub.2.
14. A method of etching a silicon layer in a silicon on insulator
structure, the method comprising the steps of: loading a silicon
substrate having a silicon on insulator structure formed thereon
into a plasma etch chamber; forming a first plasma from a first
etchant and maintaining said plasma etch chamber at a first
pressure; etching the silicon layer with the first plasma until a
fastest silicon etching region of the silicon on insulator
structure has etched the silicon layer; forming a second plasma
from a second etchant and maintaining said plasma etch chamber at a
second pressure; and etching the silicon layer with the second
plasma until a slowest silicon etching region of the silicon on
insulator structure has etched the silicon layer of.
15. A method according to claim 14 wherein said first etchant
includes SF.sub.6, HBr and O.sub.2.
16. A method according to claim 14 wherein said first etchant
includes SF.sub.6, O.sub.2 and C.sub.4F.sub.8.
17. A method according to claim 14 wherein said first pressure and
said second pressure are less than about 100 mT.
18. A method according to claim 14 wherein said first pressure is
about the same as said second pressure.
19. A method according to claim 14 wherein said first pressure is
greater than said second pressure.
20. A method according to claim 19 wherein said second pressure is
about half of said first pressure.
21. A method according to claim 15 wherein about 70 percent of the
first etchant is provided by HBr and O.sub.2.
22. A method according to claim 15 wherein the first etchant is
provided by maintaining the ratio of the SF.sub.6 flow rate to the
O.sub.2 flow rate between about 0.5 to about 1.5 and maintaining
the ratio of the sum of the SF.sub.6 flow rate and the O.sub.2 flow
rate to the HBr flow rate between about 0.2 to about 4.2.
23. A method according to claim 15 wherein said second etchant is
formed from HBr and Cl.sub.2.
24. A method according to claim 23 wherein the ratio of the HBr
flow rate to the Cl.sub.2 flow rate is about 2 to 1.
25. A method according to claim 23 wherein more than about 30
percent of the second etchant is provided by Cl.sub.2.
26. A method according to claim 23 wherein more than about 60
percent of the second etchant is provided by HBr.
27. A method according to claim 16 wherein said second etchant is
provided by forming HBr and Cl.sub.2 into the plasma etch
chamber.
28. A method according to claim 27 wherein the ratio of the HBr
flow rate to the Cl.sub.2 flow rate is about 2 to 1.
29. A method according to claim 27 wherein more than about 30
percent of the second etchant is provided by Cl.sub.2.
30. A method according to claim 27 wherein more than about 60
percent of the second etchant is provided by HBr.
31. A method of plasma etching a silicon layer of a silicon on
insulator structure formed on a silicon substrate, the method
comprising the steps of: loading a silicon substrate having a
silicon on insulator structure formed thereon into a plasma etch
chamber; forming a first plasma from a first etchant mixture
comprising SF.sub.6, O.sub.2 and C.sub.4F.sub.8 with at least about
500 Watts of source RF power and at least about 20 Watts of bias RF
power; etching the silicon layer with the first plasma until a
silicon layer in a fastest etching region of a silicon on insulator
structure is etched; forming a second plasma from a second etchant;
and etching a silicon layer of said silicon on insulator structure
with the second plasma until silicon layer in a slowest etching
region of the silicon layer insulator structure is etched.
32. A method according to claim 31 wherein SF.sub.6 provides from
about 19 percent to about 41 percent of the first etchant, O.sub.2
provides from about 41 percent to about 57 percent of the first
etchant, and C.sub.4F.sub.8 provides from about 14 percent to about
24 percent of the first etchant.
33. A method according to claim 31 wherein the first etchant is
provided by about equal parts SF.sub.6 and O.sub.2 and
C.sub.4F.sub.8 provides less than about 20 percent of the first
etchant.
34. A method according to claim 33 wherein C.sub.4F.sub.8 provides
about 17 percent of the first etchant.
35. A method according to claim 31 wherein the SF.sub.6 flow rate
in the first etchant and the O.sub.2 flow rate in the first etchant
are each at least twice the C.sub.4F.sub.8 flow rate in the first
etchant.
36. A method according to claim 35 wherein the percentage of the
first etchant provided by O.sub.2 is greater than the percentage of
the first etchant provided by SF.sub.6.
37. A method according to claim 31 wherein about half of the first
etchant is O.sub.2 and C.sub.4F.sub.8 provides less than about 20
percent of the first etchant.
38. A method according to claim 31 wherein about half of the first
etchant is O.sub.2 and the remainder of the first etchant is
provided by nearly equal parts SF.sub.6 and C.sub.4F.sub.8.
39. A method according to claim 38 wherein about 26 percent of the
first etchant SF.sub.6.
40. A method according to claim 38-wherein about 22 percent of the
first etchant is C.sub.4F.sub.8.
41. A method according to claim 31 wherein more than half of the
first etchant is O.sub.2 and about 20 percent of the first etchant
is SF.sub.6.
42. A method according to claim 41 wherein about 24 percent of the
first etchant is C.sub.4F.sub.8.
43. A method according to claim 31 wherein about 30 percent of the
first etchant is SF.sub.6 and about 15 percent of the first etchant
is C.sub.4F.sub.8.
44. A method according to claim 31 wherein more than about half of
the first etchant is O.sub.2 and less than about 20 percent of the
first etchant is C.sub.4F.sub.8.
45. A method according to claim 44 wherein about 18 percent of the
first etchant is C.sub.4F.sub.8.
46. A method according to claim 44 wherein about 27 percent of the
first etchant is SF.sub.6.
47. An apparatus for etching a silicon layer formed over and
underlined layer in an etch chamber, comprising: a gas panel
coupled to said etch chamber; an antenna proximate to said etch
chamber; a first power supply coupled to said antenna; a substrate
support disposed within said etch chamber; a second power supply
coupled to said substrate support; and a controller, coupled to
said antenna and said gas panel, said controller containing a
computer readable storage medium having program code embodied
therein, said program code causing the apparatus to perform the
following steps: (a) loading into an etch chamber a substrate
having a structure formed thereon, the structure comprising a
silicon layer formed over and underlined layer; (b) forming a first
plasma from a first etchant while maintaining said etch chamber at
a first pressure; (c) etching the silicon layer with the first
plasma until a fastest silicon etching region of the structure has
etched the silicon layer; (d) forming a second plasma from a second
etchant while maintaining said etch chamber at a-second pressure;
and (e) etching the silicon layer with the second plasma until a
slowest silicon etching region of the silicon structure has etched
the silicon layer.
48. A method according to claim 47 wherein said first etchant
consists of an etchant gas and a passivation gas.
49. A method according to claim 48 wherein said passivation gas is
HBr and O.sub.2.
50. A method according to claim 47 wherein said first etchant is a
fluorocarbon source gas, an oxygen source gas and a fluorine source
gas.
51. A method according to claim 50 wherein said fluorocarbon source
gas is C.sub.4F.sub.8.
52. A method according to claim 47 wherein said second etchant
comprises HBr and O.sub.2.
53. A method according to claim 47 wherein said second etchant
comprises HBr and Cl.sub.2.
54. A method of plasma etching a layer formed over and underlined
layer, the method comprising the steps of: etching a layer on a
first substrate with a residue forming plasma; etching a layer on a
second substrate with a first plasma that removes the residue
formed by etching a layer on the first substrate with a residue
forming plasma wherein etching with said first plasma continues
until a layer in a fastest etching region of said second substrate
is etched.
55. A method according to claim 54 wherein said residue forming
plasma is formed from HBr and O.sub.2.
56. A method according to claim 54 wherein said residue forming
plasma is formed from HBr and Cl.sub.2.
57. A method according to claim 54 wherein said first plasma is
formed from SF.sub.6, HBr and O.sub.2.
58. A method according to claim 54 wherein said first plasma is
formed from SF.sub.6, O.sub.2, and C.sub.4F.sub.8.
59. A method according to claim 54 wherein etching with the residue
forming plasma continues until a layer in a slowest etching region
is etched.
60. A method according to claim 54 wherein the residue forming
plasma is selective to the underlying layer.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to etch processes for
fabricating integrated semiconductor circuits, Micro Electro
Mechanical Systems (MEMS) structures and combined structures having
electronics and MEMS.
[0003] 2. Description of Related Art
[0004] As the integrated circuit industry continues to explore
techniques to pack more circuits onto a given semiconductor
substrate, more and more thought is devoted to orienting devices
vertically. One technique of orienting devices vertically is to
bury the devices in trenches formed within the face of a silicon
substrate. Another technique of orienting devices vertically is to
build the devices up from the substrate surface. An example of a
device that employs the technique of building devices up from the
substrate is a silicon on insulator (SOI) device.
[0005] FIG. 1 illustrates a representative mask structure 1 that
could be useful in forming an SOI device. SOI devices are
characterized by a thin insulative layer of material (commonly
referred to in the art as a buried oxide layer) that is sandwiched
between the silicon substrate and circuit elements of the device.
Typically, no other layer of material is interposed between the
buried oxide layer and the silicon substrate. As shown in FIG. 1,
buried oxide layer 4 is positioned between silicon substrate 2 and
silicon layer 6. Mask structure 1 represents a conventional mask
structure used to form SOI devices. As shown in FIG. 1, mask layer
12 is formed over nitride layer 10, which is formed, in turn over
oxide layer 8. While specific layer thicknesses vary depending upon
application, a representative layer thickness for each layer is (a)
about 15,000 .ANG. for mask layer 12; (b) about 2000 .ANG. for
nitride layer 10; (c) about 10,000 .ANG. for oxide layer 8; (d)
between about 22 to 28 .mu.m for silicon layer 6;and (e) about 5000
.ANG. for buried oxide layer 4. When pattern structure 1 is etched
in accordance with well known etching methods, trenches are formed
in silicon layer 6 as the mask pattern is transferred into the
silicon layer 6. In accordance with these well known methods,
etching of silicon layer 6 continues until buried oxide layer 4 is
reached. General requirements for the trenches formed in silicon
layer 6 are vertical sidewalls (i.e., sidewalls of about 89.degree.
+/-1.degree.) with minimal erosion of buried oxide layer 4. It is
to be appreciated that Mask structure 1 could be formed from a wide
variety of materials. For example, mask layer 12 could be formed
from an oxide, a nitride or a metal. Silicon layer 6 could be
formed from, for example, epitaxial silicon, polysilicon, doped
polysilicon or amorphous silicon.
[0006] The increased use of SOI structures has resulted in a desire
to fabricate a growing number of devices and to combine a wide
variety of device structures on a single workpiece. SOI is being
used to form capacitors, and circuits for high frequency devices
such as laptop computers and mobile phones. In addition to an
increasing variety of electronics, SOI structures are being
utilized to form accelerometers, cantilever beams and other
Micro-Electro-Mechanical-System (MEMS) devices that typically
incorporate mechanical and electronic components on same device.
The increasing variety of structures to be fabricated, and the
desire to integrate them onto a single workpiece has lead to
increased fabrication complexity.
[0007] Referring again to FIG. 1, Mask structure 1 illustrates many
of the challenges involved in fabricating complex structures such
as, for example, an SOI structure. A first challenge arises from
the fact that mask structure 1 can include regions having a variety
of critical dimensions, which dimensions range, for example, from
sub-micron up to several microns. Regions having small critical
dimensions, such as for example small critical dimension region 16,
may have critical dimensions on the order of about 0.1 .mu.m to
about 0.2 .mu.m. Some regions may have intermediate range-critical
dimensions, such as medium critical dimension region 18 where
critical dimension ranges, for example, from 0.2 .mu.m to about 1
.mu.m. Still other regions may have large critical dimensions such
as large critical dimension region 20 where critical dimensions
range from, for example, 1 .mu.m to several microns.
[0008] A second challenge arises from the fact that mask structure
1 includes regions having varying degrees of line density. Regions
of high line density such as high-density region 22 and low line
density such as low line density region 26 are present in Mask
structure 1. Mask structure 1 also includes isolated lines, such as
for example, isolated line 28.
[0009] A third challenge arises from the fact that mask structure 1
also includes both high open area percentage structures and low
open area percentage structures. Open area percentage is defined as
a ratio between an area of silicon to be etched to a total area of
the silicon substrate surface. Open area percentage can be measured
on a micro level, for example, the open area percentage for a
specific die pattern or on a macro level, for example, the overall
open area percentage for a number of die patterns distributed
across the substrate. Typical design parameters for electronic
device applications such as deep trench isolation, power devices,
and high frequency silicon on insulator devices call for open area
percentages of less than about 20. On the other hand, design
parameters for MEMS applications typically have open area
percentages of more than about 20 and may have open area
percentages as high as about 80. Mask structure 1 represents both
low open area percentage regions, such as region 30, and high open
area percentage regions, such as region 32.
[0010] When epitaxial silicon is used as the silicon layer in an
SOI structure, the epitaxial silicon is generally formed by bonding
the silicon surfaces of two silicon wafers together and then either
thinning or separating the substrates to reveal an epitaxial layer.
Various bonding and thinning methods have been proposed and are
under development; however, silicon bonding remains an expensive
and time-consuming process for obtaining epitaxial silicon. In
contrast, deposited silicon, typically polysilicon or amorphous
silicon, remains a more economic alternative to the expensive
bonded epitaxial silicon techniques. However, the use of deposited
silicon is not without problems.
[0011] In general, the thickness uniformity of deposited silicon is
relatively high, for example, on the order of about 15-20%. For
example, a layer of deposited polysilicon with a target thickness
of about 26 .mu.m may have areas with thicknesses ranging from
about 24 .mu.m to about 30 .mu.m. Variations in thickness can
complicate an etch process, and particularly an etch process
conducted on complicated structures such as mask structure 1 of
FIG. 1. One such complication is notching which is illustrated in
FIG. 2. Another complication of continued etching after the removal
of the silicon layer is erosion of the buried oxide layer. In spite
of these shortcomings, the lower cost, widespread availability and
familiarity with silicon deposition techniques and systems, ensures
deposited silicon will remain a material of choice in future
electronic and MEMS applications.
[0012] Etch processes can be categorized as dry or wet. Both types
of etch processes are employed in MEMS and electronics fabrication
processes. Wet etch chemistry typically involves exposing a
structure to a liquid chemical bath containing an etchant solution.
Common wet etch processes involve immersing the structure in the
etchant containing chemical bath, such as for example a buffered HF
solution, until the desired etching is complete.
[0013] Dry etch chemistry typically involves exposing a structure a
plasma containing an etchant. Common plasma processes for etching
silicon typically utilize, for example, a single step,
SF.sub.6/O.sub.2 based plasma, either alone or in combination with
a passivating agent such as, for example, HBr, C.sub.4F.sub.8,
CHF.sub.3 or CH.sub.2F.sub.2. A problem common to wet and dry etch
methods is an inability to compensate for etch rate variations
caused by structural variation (i.e., variations in line density,
critical dimension and open area percentage) and layer thickness
variations present in a layer of a structure being etched.
Variations in structure often result in variations in etch rate.
For example, an area with large critical dimensions will generally
experience higher etch rates than a region with smaller critical
dimensions. In general, areas with higher etch rates will etch
through a layer and reach an underlying layer in advance of regions
having slower etch rates. However, in common etch processes, etch
duration is generally determined by the etch rate of the slowest
etching region to achieve complete removal of the layer to be
etched.
[0014] A problem associated with etch duration based on the slowest
etching region is that higher etch rate regions will etch through
the layer first, and continue to etch, at varying degrees, the
surrounding etch layer and the exposed underlying layer. FIG. 2
represents a portion of an SOI structure 50 having a silicon layer
52 and a. buried oxide layer 54 formed on top of a silicon
substrate 56. The trench 58 exists in a region with an etch rate
faster than the slowest etch rate used to determine the duration of
the etch. Since trench 58 is formed in a region having a relatively
higher etch rate than the slowest etch rate region, etching will
continue in trench 58 to expose buried oxide layer 54. As a result
of continued etching after reaching buried oxide layer 54, the
bottom of trench 58 exhibits loss of sidewall profile control 60
that is commonly referred to in the art as notching. The resulting
sidewall profile created by notching increases the complexity of
subsequent deposition operations intended to fill trench 58 often
resulting in portions of the notched area not being filled by the
subsequent deposition processes. As etching continues in trench 58,
the notched region 60 enlarges and buried oxide layer 54 erodes 62
potentially resulting in diminished device performance or
failure.
[0015] In light of the above, there is a need in the art for an
etching method capable of etching a layer in a structure while
compensating for etch rate variations that occur between different
regions of the structure.
SUMMARY OF THE INVENTION
[0016] Embodiments of the present invention advantageously provide
an etch method which meets the need in the art relate art for an
etching method capable of etching a layer in a structure and
compensating for etch rate variations that occur between different
regions of the structure. In particular, one embodiment of the
present provides a method of etching a layer formed over an
underlying layer in a structure, the method comprising the steps
of: exposing the structure to a first etchant that etches a portion
of the layer for a period of time sufficient for a region of the
layer with a fastest etch rate to etch through the layer; and
exposing the structure to a second etchant that etches a portion of
the layer for a period of time sufficient for a region of the layer
with a slowest etch rate to etch the layer.
BRIEF DESCRIPTION OF DRAWINGS
[0017] The teachings of the present invention can be readily
understood by considering the following detailed description in
conjunction with the accompanying drawings, in which:
[0018] FIG. 1 is a cross-section view of a mask structure;
[0019] FIG. 2 is a cross-section view of a trench illustrating loss
of bottom profile control;
[0020] FIG. 3 is a schematic, cross section view of a plasma etch
chamber in which embodiments of the inventive method of FIG. 4 can
be performed;
[0021] FIG. 4 is a block diagram of an embodiment of the inventive
etch method;
[0022] FIG. 5 is a cross-section view of the mask structure of FIG.
1 after exposing the structure to a first etchant;
[0023] FIG. 6 is a cross-section view of a MEMS structure; and
[0024] FIG. 7 is a cross-section view of the MEMS structure of FIG.
6 after exposing the structure to a first etchant.
[0025] To facilitate understanding, identical reference numbers are
used, where possible, to designate identical elements that are
common to the figures.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0026] Embodiments of the present invention provide an etch process
that is advantageously useful in etching a layer in a structure
having various critical dimensions, line densities and open area
percentages. Embodiments of the present invention may be
particularly useful in etching, for example, a layer of silicon
that is part of a silicon on insulator (SOI) structure, MEMS
structure or structure having a combination of MEMS and electronics
patterns. In addition, etch processes according to embodiments of
the present invention may be utilized to advantageously etch layers
of material having below average thickness uniformity in a mask
structure that also includes various critical dimensions, line
densities and open area percentages.
[0027] In an embodiment according to the present invention, a mask
structure having a layer and an underlying layer is exposed to a
first etchant and a region of the mask structure with a fastest
etch rate is determined. Etching with the first etchant continues
until a region of the structure with a fastest etch rate etches the
layer. The structure is exposed to a second etchant and a region of
the structure with a slowest etch rate is determined. Etching with
a second etchant continues until a region with a slowest etch rate
etches a layer. In another embodiment of the present invention, the
second etchant provides sidewall passivation to the layer. In yet
another embodiment of the present invention, the second etchant is
selective to an underlying layer. An embodiment of the etch process
of the present invention may provide an anisotropic etch profile
with nearly vertical, smooth sidewalls with minimal erosion of an
underlying layer. In this context, nearly vertical sidewalls refer
to sidewalls that are 89.degree. +/-1.degree. relative to the
etching plane of the substrate.
[0028] In one aspect of the present invention, the first etchant is
selected based upon the open area percentage in a mask structure
being etched. In an embodiment of the present invention in accord
with this aspect of the present invention, the first etchant is
selected depending upon the open area percentage in a mask
structure such as selecting a particular first etchant when open
area percentage is high (i.e., open area percentage greater than or
about 20) or selecting a different particular first etchant when
the open area percentage is low (i.e., open area percentage less
than about 20).
[0029] In another aspect of the present invention, an embodiment of
the etch method is a clean etch process. In this context, a clean
etch process refers to the small amount or lack of etch byproduct
remaining in the etch process chamber at the end of an etch
process. Some embodiments of the second etchant of the present
invention are residue forming etchants. To compensate for this
residue formation, an embodiment of the first etchant of the
present invention is provided that removes the residue formed by
etching a previous substrate with a residue forming second
etchant.
[0030] For example, a first substrate is processed according to an
embodiment of the present invention wherein the second etchant is a
residue forming etchant. Thus, at the end of etching with the
second etchant, residue remains in the etch chamber. When a
subsequent substrate is etched, a first etchant may be selected
that etches the layer to be etched on the present substrate while
also removing or cleaning the residue generated by etching the
previous substrate. Embodiments of the present invention have been
used in sequential wafer processing operations where more than 300
wafers have been processed without producing chamber residue, or
requiring the chamber to be taken out of service and wet
cleaned.
[0031] Embodiments of the present invention are particularly useful
in etching, for example, a silicon layer formed as part of a
silicon on insulator (SOI) structure. The silicon layer may be
epitaxial silicon, polysilicon, doped polysilicon, amorphous
silicon or combinations thereof. FIG. 1 illustrates a
representative mask structure 1 used to form SOI structures. SOI
device structures are characterized by a thin insulative layer of
material (commonly referred to in the art as a buried oxide layer)
that is sandwiched between the silicon substrate and circuit
elements of the device. Typically, no other layer of material is
interposed between the buried oxide layer and the silicon
substrate. As shown in FIG. 1, buried oxide layer 4 is positioned
between a silicon substrate 2 and a silicon layer 6. Mask structure
1 represents a conventional mask structure used to form SOI
devices.
[0032] An embodiment of the two etchant etch process according to
the present invention may be reduced to practice in a number of
etching systems. One such etching system is a Decoupled Plasma
Source (DPS) Centura etch system available from Applied Materials,
Inc., of Santa Clara, Calif. FIG. 3 depicts a schematic diagram of
the DPS etch process chamber 110, that comprises an inductive coil
antenna segment 112, positioned exterior to a dielectric, dome
shaped ceiling 120 (referred hereinafter as dome 120). The antenna
segment 112 is coupled to a radio-frequency (RF) source 118 that is
generally capable of producing an RF signal of about 200 W-3000
Watts having a tunable frequency of about 12.56 MHz. The RF source
118 is coupled to the antenna segment 112 via a matching network
119. The process chamber 110 also includes a substrate support
pedestal (cathode) 116 that is coupled to a second RF source 122
capable of producing an RF signal of about 10 W-200 Watts having a
frequency of approximately 400 kHz. The second RF source 122 is
coupled to the substrate support pedestal 116 through a matching
network 124. Hereinafter, the first and second RF sources 118, 122
will be referred to, respectively, as RF source generator 118 and
RF bias generator 122, respectively. Chamber 110 also contains a
conductive chamber wall 130 that is coupled to an electrical ground
134. A controller 140 comprising a central processing unit (CPU)
144, a memory 142, and support circuits 146 for the CPU 144 is
coupled to the various components of the DPS process chamber 110 to
facilitate control of the etch process.
[0033] In operation, a semiconductor substrate 114 is placed on the
substrate support pedestal 116 and gaseous components are supplied
from a gas panel 138 to the process chamber 110 through inlets 126
to form a gaseous mixture 150. The gaseous mixture 150 is ignited
into a plasma 152 in the process chamber 110 by applying RF power
from the RF source and bias generators 118 and 122, respectively,
to the antenna segment 112 and the substrate support pedestal 116.
The pressure within the interior of the process chamber 110 is
controlled using a throttle valve 127 situated between the chamber
110 and a vacuum pump 136. The temperature at the surface of the
chamber wall 130 is controlled using liquid containing conduits
(not shown) that are located within the walls 130 of the chamber
110. For example, the walls 130 can be maintained at about 65
degrees Celsius during processing.
[0034] The temperature of the substrate 114 is controlled by
stabilizing the temperature of the support pedestal 116 and
providing He gas from a He source 148 to channels formed between
the back of the substrate 114 and grooves (not shown) on the
surface of support pedestal 116. The He facilitates heat transfer
between the substrate 114 and the support pedestal 116. During the
etch process, the substrate 114 is gradually heated by the plasma
150 to a steady state temperature. Typically, substrate 114 is
maintained in a temperature range of between about -40 to about 60
degrees Celsius with a preferred operating range of about 15 to
about 20 degrees Celsius.
[0035] To facilitate control of the chamber as described above, the
CPU 144 may be one of any form of general purpose computer
processors that can be used in an industrial setting for
controlling the various chamber components and even other
processors in a processing system where computer controlled chamber
components are utilized. The memory 142 is coupled to the CPU 144.
The memory 142, or computer readable medium, may be one or more of
readily available memory such as random access memory (RAM), read
only memory (ROM), floppy disk drive, hard disk, or any other form
of digital storage, local or remote. The support circuits 146 are
coupled to the CPU 144 for supporting the processor in a
conventional manner. Support circuits 146 include cache, power
supplies, clock circuits, input/output circuitry and subsystems,
and the like. An etch process, such as the etch process 300 of FIG.
3, is generally stored in the memory 142, typically as a software
routine. The software routine may also be stored and/or executed by
a second CPU (not shown) that is remotely located from the hardware
being controlled by the CPU 144.
[0036] The software routine executes the etch process, such as
process 300 of FIG. 4, to operate the chamber 110 to perform the
steps of the process. When executed by the CPU 144, the software
routine transforms the general purpose computer into a specific
process computer (controller) 140 that controls the chamber
operation to perform a process such as etch process 300. Although
embodiments of the present invention are discussed as being
implemented as a software routine, some or all of the method steps
that are discussed herein may be performed in hardware as well as
by the software controller. As such, the invention may be
implemented in software and executed by a computer system, in
hardware as an application-specific integrated circuit or other
type of hardware implementation, or in a combination of software
and hardware.
[0037] An etch method according to the present invention may be
better appreciated by turning to process 300 of FIG. 4. First,
expose a structure to a first etchant for a period of time
sufficient for a fastest etching region of the structure to etch a
layer (steps 305-320). Second, expose a structure to a second
etchant for a period of time sufficient for a slowest etch rate
region to etch a layer (steps 325-340). The first and second
etchants characterized using steps 305-340 of process 300 (FIG. 4)
may be used to etch additional wafers in the same batch of wafers
or other wafers having a similar mask structure (steps
335-340).
[0038] According to step 305, expose a structure having a layer
formed over an underlying layer to a first etchant. A structure may
be exposed to a first etchant in a number of ways depending, for
example, on the type and form of etchant used (i.e., gas or
liquid), and the type of etch process utilized (i.e., wet etch or
dry etch). In an embodiment where the etch process is a dry etch or
a plasma etch process, the structures formed on a substrate loaded
into a plasma etch chamber are exposed to the first etchant when
the etchant, typically provided as a gas, is provided into the etch
chamber and ignited into a plasma. Referring by way of example and
not limitation to etch chamber 110 of FIG. 3, a substrate 114 may
be loaded into the etch chamber and an etchant from the gas panel
is provided into the chamber and ignited into a plasma by coupling
RF energy from source and bias RF generators into the etch chamber.
The resulting plasma etches the layers of material formed on the
structure.
[0039] First, according to step 305, expose a structure having a
layer formed over an underlying layer to a first etchant. In one
embodiment of the present invention, a first etchant is formed that
includes an etchant gas and a passivation gas. A preferred etchant
gas contains fluorine that acts as the primary etchant. Fluorine
may be provided from any of a number of multi-fluorine atom
compounds such as, for example, CF.sub.4, NF.sub.3 and SF.sub.6. A
preferred etchant source gas is SF.sub.6.
[0040] The passivation source gas is used to promote deposition on
sidewalls referred to in the art as sidewall passivation. Sidewall
passivation helps control the etch profile by preventing lateral
erosion of the etching layer. The passivation source gas may be
provided from a single gas source. In one embodiment, the
passivation source gas is formed a gaseous mixture of at least two
gases. In a specific embodiment, the passivation source gas is
formed from a gaseous mixture of HBr and oxygen. Oxygen can be
supplied from any of a number of compounds such as, for example,
oxygen or oxygen diluted in an inert gas. A diluted oxygen source
gas could be provided in a suitable diluted ratio, such as for
example, a ratio of about 70% inert gas and 30% O.sub.2. One
representative inert gas is helium. A preferred oxygen source gas
is O.sub.2.
[0041] In one embodiment, the first etchant includes passivation
gas mixture of HBr and O.sub.2 and a fluorine source gas where
about 30% of the first etchant is provided by the fluorine source
gas. In another embodiment the first etchant includes a fluorine
source gas and passivation gas mixture of HBr and O.sub.2 where the
passivation gas mixture provides about 70% of the first etchant and
the percentages of HBr and O.sub.2 in the passivation gas mixture
are about equal. In yet another embodiment, the first etchant is
formed from a gaseous mixture where SF.sub.6 is the fluorine source
gas and passivation source gas is a gas mixture of HBr and O.sub.2
where the flow rates of O.sub.2 and HBr are about equal and the
flow rate of the O.sub.2 is greater than the flow rate of the
SF.sub.6. In a specific embodiment, the first etchant is a plasma
formed from a gaseous mixture of a fluorine source gas and
passivation gas mixture of HBr and O.sub.2, the total gas flow of
the gaseous mixture contains about 34% O.sub.2, 34% HBr and about
31% SF.sub.6. In another specific embodiment, the O.sub.2 flow rate
is about 60 sccm, the HBr flow rate is about 60 sccm and the
SF.sub.6 flow rate of about 55 sccm.
[0042] In a preferred embodiment of a first etchant according to
the present invention, the first step plasma etch, the first
etchant is formed from an etchant gas and a passivation gas where
the etchant gas is SF.sub.6 and the passivation gas is formed from
HBr and O.sub.2 and the respective flow rates of each gas are
determined by (1) maintaining the ratio of the SF.sub.6 flow rate
to O.sub.2 flow rate between about 0.5 to about 1.5 while also (2)
maintaining between about 0.2 to about 4.2 the ratio obtained by
dividing the sum of the SF.sub.6 flow rate and the O.sub.2 flow
rate by the HBr flow rate.
[0043] In one embodiment of a plasma etch process according to the
present invention, the first etchant is a plasma ignited by the
energy provided from the RF source and RF bias generators (FIG. 3).
In one embodiment, the RF source power level is less than about
1000 Watts and the ratio of RF source power level to RF bias power
level is about 35:1. In another specific embodiment, the first
etchant includes O.sub.2 and HBr with about equal flow rates and a
fluorine source gas with a flow rate of about 55 sccm, that is
ignited into a plasma with a source RF power level of about 700 W,
a bias power level of about 20 Watts and a chamber pressure of
about 25 mT.
[0044] Next, according to step 310, etch a portion of the layer
with the first etchant. This step represents the process of
determining a region of the mask structure with a highest etch
rate. By identifying a region with a highest etch rate, the
duration of the etch process performed by the first etchant may be
limited to minimize over etching. This step provides a relative
measure of first etchant etch rate non-uniformity caused by the
mask structure, such as, for example, variations in critical
dimension and line density. In an embodiment of the present
invention, the first etchant is a plasma etchant that provides
silicon etch rates of more than about 1.5 .mu.m/min, and preferably
etches silicon at rates of about 4 .mu.m/min.
[0045] Initial thickness measurements are taken in the mask
structure before etching a portion of the layer with the first
etchant (step 310). Thickness measurements here refer to obtaining
the thickness of the layer to be etched in the various regions of
the mask structure. In an embodiment where the first etchant is a
plasma etch, the measured substrate is placed in a suitable etch
processing reactor, such as etch chamber 110 of FIG. 3. A plasma is
formed from the first etchant and the mask structure is exposed to
the plasma for a period of time sufficient to obtain etch rate
information from the various regions of the mask structure. In most
plasma etch processes, etching for a period of time ranging from
about 90 to about 300 seconds is sufficient. The period of time
needed to evaluate the etch rate will vary depending on a number of
factors such as, for example, the critical dimensions in the
structure, etch depth and type of etch process selected i.e., wet
etch or dry etch; capacatively coupled plasma or remotely generated
plasma, and so forth. Once the mask structure has exposed to the
plasma process chemistry for a period of time sufficient to obtain
etch rate information, the substrate is removed from the etch
chamber and the layer measured to determine the amount etched in
each of the various regions of the mask structure.
[0046] Next, according to step 315, determine a region of the mask
structure with a fastest etch rate. The etch rate in a particular
region is readily calculated by dividing the layer thickness etched
during step 310 and dividing by the duration of the etch process
conducted in step 310. Once a region of the mask structure with a
highest etch rate is identified, the etch rate of that region is
used to determine the duration of the first etchant etch process
(step 320). The duration of the first etchant etch process is
determined by calculating the time when etching a layer in a region
with a fastest etch rate is complete. Referring by way of example
to mask structure 1 of FIG. 1, a fastest etch rate is evaluated by
how quickly silicon layer 6 is etched in a particular region.
[0047] By limiting the first etchant etch duration to the etch rate
at which the fastest etching region of the mask is etched, two
important purposes are accomplished. First, the fastest etch rate
is allowed to proceed completely through the layer so that in that
region and in regions with etch rates comparable to that region,
the layer etch is complete. This optimized use of the fastest etch
rate increases throughput. Second, by limiting the duration of the
first etchant etch to the time in which etching is completed in the
fastest etch rate region, the likelihood that notching will occur
in faster etch rate regions is reduced since the first etchant etch
process ceases when etching in the fastest etching region is
complete. Referring by way of example to mask structure 1 of FIG.
1, limiting the first etchant etch to the time it takes the highest
etch rate region to etch through silicon layer 6 ensures that the
duration of buried oxide layer 4 exposure to the first etchant etch
is reduced since the first etchant etch ends when the fastest
etching region exposes buried oxide layer 4. In summary,
optimization of the first etchant etch based upon the etch rate of
a fastest etch rate region provides increased throughput while
reducing the likelihood of erosion in layer sidewalls and
underlying layers.
[0048] Turning now to FIG. 5, the first etchant etch optimization
performed by steps 305, 310, 315 and 320 may be better appreciated.
FIG. 5 illustrates the result of the different etch rates that
occur in the different regions of a mask structure. FIG. 5
represents a cross section of etched mask structure 3 which is mask
structure 1 of FIG. 1 after exposure to an embodiment of a first
etchant according to the present invention. Etched mask structure 3
has been etched by a first etchant for a period of time sufficient
for a fastest etch rate region to etch through silicon layer 6. For
clarity, mask layer 12 has been omitted from FIG. 5. As illustrated
in FIG. 5, region 80 (i.e., a region which has a large critical
dimension 20 positioned between a medium critical dimension region
18 and a small critical dimension regions 16) exhibited the fastest
etch rate.
[0049] FIG. 5 also illustrates the relative etch rates within the
mask structure 3 after exposure to an embodiment of a first etchant
according to the present invention. Region 82 (i.e., a region with
a large critical dimension 20 and high percentage open area 32
adjacent to an isolated line 28) and region 83 (i.e., a region with
a large critical dimension 20) etched nearly the same amount of
silicon layer 6 as did region 80. On the other hand, etch rates
slower than that of region 80 also occurred. For example, the
slowest etch rate occurred in the high-density region 22 having the
smallest critical dimension 16. Regions having etch rates between
these two extremes are also illustrated. Thus, FIG. 5 illustrates
the nearly limitless variation in etch rate that maybe induced by
structural variations in the mask such as line density, critical
dimension and open area-percentage. While FIG. 5 illustrates the
highest etch rate region occurring at region 80, the highest etch
rate region may be found in virtually any portion of the mask
structure and must therefore be determined for each mask structure
to be optimized. Thus, in this example, since a fastest etch rate
occurred in region 80, the duration of the first etchant etch is
limited by the time it takes region 80 (i.e., the fastest etch rate
region on the mask structure) to etch through the silicon layer
6.
[0050] The next step of the present invention according to step 325
is expose the structure to a second etchant. The main problem to be
solved with the second etchant etch is removing the layer with
minimal loss of an underlying layer or lateral erosion of the
layer. A factor in second etchant selection is the ability of the
second etchant to provide sidewall passivation. A preferred second
etchant would also be selective to an underlying layer. Preferred
second etchants are highly selective to an underlying layer. Highly
selective in this context refers to the relationship between the
etch rate of the layer and to the etch rate of an underlying layer.
High selectivity indicates that the underlying layer etch rate will
be slower than the etch rate of the layer. In the context of a
second etchant etch process according to the present invention,
high selectivity means a selectivity of greater than about 30:1
(i.e., the layer etch rate is about 30 times faster than the
underlying layer etch rate.) Second etchant selection may be better
appreciated through reference to FIG. 5. A preferred second etchant
is selective to buried oxide layer 4 and provides sidewall
passivation to prevent lateral etching of silicon layer 6. A
selected second etchant removes remaining portions of silicon layer
6 with minimal loss of underlying oxide layer 4 and little or no
lateral erosion of silicon layer 6. A selected, suitable second
etchant process is selective to the underlying buried oxide layer
4. Highly selective to oxide here means that the ratio between the
etch rate of the silicon layer 6 and the etch rate of underlying
buried oxide layer 4 will indicate that silicon layer 6 is etched
faster than underlying oxide layer 4. In an embodiment of the
second etchant according to the present invention, the selectivity
of the second etchant etch process to the underlying oxide layer is
at least about 30:1 and, preferably, is greater than about
35:1.
[0051] A suitable second etchant should also be able to etch, at a
reasonable rate, the layer remaining at the completion of the first
etchant etch step. In this context, a reasonable etch rate is
evaluated for commercial productivity. Etch rates in the hundreds
of angstroms per minute are not usually commercially viable while
etch rates above about 5,000 .ANG./min. for a selective etch
process are commercially viable. An embodiment of the second
etchant according to the present invention provides a layer etch
rate of at least 5,000 .ANG./min. and, preferably, from about 6,000
.ANG./min. to about 8,000 .ANG./min.
[0052] Referring again to FIG. 5, for example, a suitable second
etchant for the mask structure of FIG. 5 is selected to provide a
commercially viable silicon etch rate while limiting underlying
oxide layer erosion in areas where the silicon layer has been
removed by the first etchant. A preferred second etchant also
provides sidewall passivation to prevent profile loss and notching
of the silicon layer 6. In one embodiment according to the present
invention, it is believed that complete silicon layer removal with
minimal profile loss and minimal underlying oxide layer erosion may
be obtained by providing a plasma of a second etchant that is
selected to provide sidewall passivation to the layer and is
selective to the underlying layer and maintaining that second
etchant plasma etch process until the slowest etch rate region has
etched the silicon layer 6. Evaluation of a selected second etchant
and second etchant etch process on a specific mask is accomplished
according to steps 330, 335 and 340 of process 300 of FIG. 4.
[0053] One suitable second etchant and second etchant etch process
is formed from an HBr based plasma using high bias RF power levels.
For example, a second etchant may include HBr and O.sub.2 formed
into a plasma. When an HBr and O.sub.2 plasma etches, for example,
silicon, HBr is the main etchant and also reacts with the silicon
and O.sub.2 to form a Si.sub.xBr.sub.yO.sub.z polymer for sidewall
passivation. Oxygen can be supplied from any of a number of
compounds such as, for example, oxygen or oxygen diluted in an
inert gas. A diluted oxygen source gas could be provided in a
suitable diluted ratio, such as for example, a ratio of about 70%
inert gas and 30% O.sub.2. One representative inert gas for
diluting the oxygen is helium. A preferred oxygen source gas is
O.sub.2.
[0054] In an HBr and O.sub.2 plasma, high bias power levels are
used to accelerate the Br ions toward the substrate thereby
providing a highly anisotropic sputter etch. In this context, high
bias RF power level refers to a bias RF power level of more than
about 100 Watts and preferably of about 200 Watts. In an
alternative embodiment, the ratio of source-RF power level to bias
RF power level ranges from about 8:1 to about 5:1.
[0055] In an embodiment of the second etchant according to the
present invention, the second etchant includes HBr and O.sub.2 and
is formed into an etching plasma. In a preferred embodiment of the
second etchant, O.sub.2 provides from between about 2% to about 5%
of the second etchant. In an alternative embodiment of the second
etchant, the second etchant is mostly HBr. In a specific
embodiment, the second etchant includes about 97% HBr and about 3%
O.sub.2. In another specific embodiment, the second etchant is
mostly HBr, ignited into a plasma at a pressure of about 20 mT with
RF energy where the ratio between the source RF power level to bias
RF power level is about 8:1. In another specific embodiment, the
second etchant is about 97% HBr, about 3% O.sub.2, formed into a
plasma from a source RF power level of about 1600 W and a bias RF
power level of about 200 Watts at a pressure of about 20 mT.
[0056] Once a suitable second etchant is selected (step 325), two
determinations are made to optimize the second etchant etch step.
First, as set forth in step 335, determine a region of the mask
structure with a slowest etch rate. Second, as set forth in step
340, determine the second etchant duration based on a region with a
slowest etch rate. These determinations are made based upon the
state of the etch process at the end of the first etchant etch
step. The second etchant etch begins where the first etchant etch
stopped. Accordingly, evaluation of the influence on the second
etchant etch rate by the structural variations in a mask structure
begins with a mask structure as it appears at the end of the first
etchant etch. In other words, the second etchant etch is evaluated
on a mask structure that has been etched by a first etchant etch
process according to steps 305-320. An example of one such etched
mask structure is illustrated in FIG. 5. As illustrated in FIG. 5,
the thickness of silicon layer 6 remaining at the end of a first
etchant etch step may vary considerably between the different
regions of the mask structure.
[0057] According to step 330, etch a portion of the mask structure
with the second etchant. This step, like step 310, refers to the
process of exposing the mask structure to the etchant for a period
of time sufficient to determine etch rates for in the various mask
structure regions. Determining which region has the s from lowest
etch rate (step 335) is determined by comparing the layer thickness
in the mask regions before and after step 330. The change in layer
thickness is divided by the duration of the etch to determine the
etch rate in the regions. Once a slowest etch rate region is
selected, the duration of the second etchant etch (step 340) is
determined by how long it will take to etch a layer having a
thickness measured at the end of a first etchant etch in a slowest
etch rate region. It is believed that setting the duration of the
second etchant etch based upon a slowest etch rate region achieves
complete removal of the layer while reducing the likelihood of
underlying layer erosion.
[0058] Next, according to step 345, determine whether or not
additional wafers are etched. Once an embodiment of a two etchant
etch according to the present invention is determined for a mask
structure, the embodiment of the two etchant etch may be used to
etch additional wafers having a similar mask structure. Thus, a
mask structure representative of a number of wafers may be used to
determine an appropriate two etchant etch process according to
steps 305 through 340. Then, in steps 345 and 350, additional
wafers having a similar mask structure are etched using two etchant
etch process for that mask structure. Once the additional wafers
having a similar mask structure are etched (i.e., the answer to
decision block 345 is "No"), processing according to the present
invention ends.
[0059] In another aspect of the present invention, an embodiment of
the etch method of the present invention is selected and based upon
an open area percentage of a mask structure end a desire to reduce
the likelihood of black silicon formation. Open area percentage end
a silicon etch context, for example, is defined as a ratio between
an area of silicon to be etched to a total area of a mask structure
or and the silicon substrate surface. Open area percentage can be
measured on a micro level, for example, the open area percentage
for a specific die pattern or on a macro level, for example, the
overall open area percentage for a number of die patterns
distributed across the substrate or the open area percentage for an
entire mask structure. Typical design parameters for electronic
device applications such as deep trench isolation, power devices,
and high frequency silicon on insulator devices call for open area
percentages of less than about 20. On the other hand, design
parameters for MEMS applications typically have open area
percentages of more than about 20 and may have open area
percentages as high as about 80. For purposes of illustration, mask
structure 1 of FIG. 1 shows low open area percentage regions, such
as region 30, and high open area percentage regions, such as region
32.
[0060] In a silicon etch context, for example, open area
percentages that are high (i.e., open area percentages above about
20) represent an increased availability of silicon and with it an
increased likelihood of silicon spike or black silicon formation.
As open area percentage increases, the likelihood that sputtered
mask material or etch reaction byproducts may redeposit on the
substrate surface and act as a micro mask also increases. The
directional etch component needed for vertical sidewalls and
anisotropic etching of desired features also results in directional
etching around the micromask. As a result of the directional etch
component, the micro mask produces spikes. A spike consists of a
silicon body with a thin passivating siliconoxyfluoride skin. When
viewed by an observer, light with a wavelength less than the length
of the spikes will be reflected and caught between spikes thereby
making the area with spikes appear dark. Spike formation as a
result of directional etching around the micromask is commonly
referred to in the art as `black silicon` because of this observed
darkening of the silicon surface. The redeposition of mask material
and etch byproducts that result in micromasking and subsequent
spike formation are not acceptable because areas which should stay
clean become contaminated thereby reducing the useful area of the
substrate or mask structure. While the formation of black silicon
is more pronounced at higher open area percentages, black silicon
formation has been observed in mask structures having open area
percentages of about 20.
[0061] An embodiment of an etch process according to the present
invention for mask structures having open area percentages of about
or greater 20 will now be described with respect to a mask
structure 600 of FIG. 6. FIG. 6 illustrates a cross-section view of
a representative mask structure 600 suited to the formation of a
number of devices such as, for example, MEMS devices. Mask
structure 600 includes a mask layer 654, a layer 653 and an
underlying layer 655 all of which are formed on a substrate 651.
Mask structure 600 includes areas of isolated lines, high density
and low-density lines each having a variety of critical dimensions.
The structures of 651 and 652 are illustrative of the types and
variety of masking structures that are part of masking structure
600. Masking structure 651 includes an isolated line 610 with a
critical dimension 603 (CD1). Masking structure 651 also includes a
high-density region 615 with each line having a critical dimension
603 (CD1). Masking structure 652, on the other hand, includes a
region of medium density lines 612 each having a larger critical
dimension 605 (CD2). For purposes of illustration, CD2 is greater
than CD1. In between and adjacent to structures within masking
structure 600, such as masking structures 651 and 652, portions of
the substrate 651 are exposed. Regions of exposed substrate 657
increased the open area percentage in a mask structure. In
addition, larger critical dimension regions such as region 612 of
mask the structure 652 may also contribute to increasing the open
area percentage of a mask structure.
[0062] Masking layer 654 may be formed from any suitable material
and is generally selected based upon compatibility with etching
layer 653 and the relative etch rates between mask layer 654 and
layer 653. Common mask layer materials include, for example,
oxides, nitrides and metals. In a silicon etch context, for
example, layer 653 may be any form of silicon, such as for example,
epitaxial silicon, polysilicon, doped polysilicon, amorphous
silicon or combinations thereof. In a silicon etch context, for
example, mask structure 600 may include: (1) a mask layer 654 that
is an oxide about 5000 .ANG. thick; (2) a layer 653 that is doped
polysilicon about 2.5 .mu.m thick and (3) an underlying layer 655
that is an oxide about 20,000 .ANG. thick. In another
representative mask structure, mask structure 600 may include: (1)
a mask layer 654 that is an oxide about 10,000 .ANG. thick and (2)
a layer 653 that is doped polysilicon about 7 .mu.m thick.
[0063] An embodiment of the present invention particularly useful
in reducing the probability of black silicon formation will now be
described with regard to flow diagram 300 of FIG. 4. When the
percentage open area of a mask structure is greater than or about
20, one embodiment of the first etchant in accordance with the
present invention includes a fluorine source gas, an oxygen source
gas and a fluorocarbon source gas. In another embodiment, the first
etchant includes an oxygen source, a fluorine source and a
fluorocarbon source that is ignited into a plasma in an etch
chamber such as, for example, chamber 110 to FIG. 3. To provide
more precise control of the amounts of oxygen, fluorine and
fluorocarbon in the first etchant, three separate sources are
provided, one each for an oxygen source, a fluorine source and a
fluorocarbon source. Oxygen can be supplied from any of a number of
compounds such as, for example, oxygen or oxygen diluted in an
inert gas. A diluted oxygen source gas may be provided in a
suitable diluted ratio, such as for example, a ratio of about 70%
inert gas and 30% O.sub.2. One representative inert gas is helium.
A preferred oxygen source gas is O.sub.2. Fluorine acts as the
primary etchant and can be provided from any of a number of
multi-fluorine atom compounds such as, for example, CF.sub.4,
NF.sub.3 and SF.sub.6. A preferred fluorine source gas is SF.sub.6.
Suitable fluorocarbon source gases contain fluorine and carbon in a
ratio of two fluorine atoms for each carbon atom. The fluorocarbon
source gas is also selected for its ability to provide
(CF.sub.2).sub.n type polymers (i.e., Teflon) or other polymer
precursor atoms to promote sidewall passivation. As such, the
fluorocarbon source also acts as a passivation gas. Preferred
fluorocarbon source gases also provide additional fluorine to
promote vertical sidewall profiles and prevent black silicon
formation. Suitable fluorocarbon source gases include, for example,
C.sub.2F.sub.4, C.sub.3F.sub.6 and C.sub.4F.sub.8. A preferred
fluorocarbon source gas is C.sub.4F.sub.8.
[0064] When a first etch and embodiment includes a fluorine source,
an oxygen source, a fluorocarbon source to plasma etch silicon, it
is believed each source has a specific function in the silicon etch
process. It is believed that the fluorine source gas produces F*
(i.e., fluorine radicals) for the chemical etching of the silicon
by forming volatile SiF.sub.4. It is believed that the oxygen
source creates O* (i.e., oxygen radicals) to passivate the silicon
surface with SiO.sub.xF.sub.y and that the fluorocarbon source
provides C.sub.xF.sub.y precursors for sidewall passivation.
Additionally, it is believed XF.sub.x.sup.+ ions, formed from
either or both of the fluorine source and the fluorocarbon source,
etch the SiO.sub.xF.sub.y layer. For example, C.sub.4F.sub.8 may
form CF.sub.x.sup.+ that etches in this plasma by forming volatile
CO.sub.xF.sub.y and SF.sub.6 may form SF.sub.x.sup.+ that etches in
this plasma by forming volatile SO.sub.xF.sub.y. An embodiment of
the first etch ant according to the present invention provides each
of the sources in a suitable ratio that forms an anisotropic
silicon etching plasma which, advantageously, results in smooth,
vertical sidewall profiles without black silicon formation.
[0065] In an embodiment of a first etchant etch process for etching
a mask structures having an open area percentage of more than or
about 20, the first etchant includes a fluorine source gas flow
rate that is about twice the fluorocarbon source gas flow rate and
the oxygen source gas flow rate is about three times the
fluorocarbon source gas flow rate. In a specific embodiment, the
fluorine source gas is SF.sub.6, the oxygen source gas is O.sub.2
and the fluorocarbon source gas is C.sub.4F.sub.8. In an
alternative embodiment, the fluorine source gas flow rate is about
60 sccm, the oxygen source gas flow rate is about 90 sccm and
fluorocarbon source gas flow rate is about 30 sccm. In a preferred
embodiment, the fluorine source gas is SF.sub.6, and fluorocarbon
source gas is C.sub.4F.sub.8. To some embodiment of a first etch
ant according to the present invention are particularly useful in
etching a mask structure having an open area percentage of about
80.
[0066] In an embodiment of the first etchant, the first etchant
includes a fluorine source gas, an oxygen source gas and a
fluorocarbon source gas. In a specific embodiment of the first
etchant, the fluorine source gas flow rate is about three times the
flow rate of the fluorocarbon source gas flow rate and the flow
rate of the oxygen source gas is more than about four times the
flow rate of the fluorocarbon source gas. In a specific embodiment,
the fluorine source gas is SF.sub.6, the oxygen source gas is
O.sub.2 in the fluorocarbon source gas is C.sub.4F.sub.8. In a
preferred embodiment of the first etchant, the fluorocarbon source
gas is C.sub.4F.sub.8 with a flow rate of about 20 sccm. In another
preferred embodiment , the fluorocarbon source gas is
C.sub.4F.sub.8 with a flow rate of about 20 sccm, the oxygen source
gas is O.sub.2 with a flow rate of about 90 sccm and the fluorine
source gas is SF.sub.6 with a flow rate of about 60 sccm.
[0067] In another preferred embodiment of the first etchant, the
first etchant is ignited into a plasma where the fluorine source
gas is SF.sub.6 and provides between about 19 percent to about 41
percent of the first etchant; the oxygen source gas is O.sub.2 and
provides between about 41 percent to about 57 percent of the first
etchant; and the fluorocarbon source gas is C.sub.4F.sub.8 and
provides between about 14 percent to about 24 percent of the first
etchant.
[0068] In an embodiment of the present invention with a first
etchant is a plasma, the first etchant includes an oxygen source
gas, a fluorine source gas and a fluorocarbon source gas formed
into a plasma in an etch chamber such as, for example, a DPS
chamber 110 of FIG. 3, by applying RF energy from the source 118
and bias 122 RF generators. The source RF generator 118 provides
inductive power into the plasma for the formation of or control of
the plasma density and the bias RF generator 122 provides
bombardment energy and directionality of ions to the substrate 114.
Other methods of generating a plasma from the first etchant may be
utilized, For example, plasma may be formed by capacitively
coupling RF energy into an etch chamber, such as, for example, in a
parallel plate etch reactor. The first etchant may also be remotely
activated, such as by a conventional remote microwave source, and
then provided into a chamber holding the substrate.
[0069] In a specific embodiment where a first etchant is formed
into a plasma, the source RF power level is less than about 1000 W
and the bias RF power level is less than about 100 W. In a specific
embodiment the source RF power is about 700 Watts. In another
specific embodiment the ratio of the source RF power level to the
bias RF power level is less than about 25:1. In an alternative
embodiment, the ratio of the source RF power level to the bias RF
power level is about 23:1. In one preferred embodiment, the source
RF power level is about 700 Watts and a bias RF power level is
about 30 Watts.
[0070] In an alternative embodiment where a first etchant is formed
into a plasma, the ratio of the source RF power level to the bias
RF power level is less than about 15:1. In a specific embodiment,
the ratio of the source RF power level to the bias RF power level
is about 10:1. In a specific preferred embodiment, the RF source
power level is about 700 Watts and RF bias power level is about 70
Watts.
[0071] Pressure may be regulated when etching with a plasma formed
from the first etchant, for example referring to chamber 110 in
FIG. 3, by throttle valve 127. Generally, pressure is maintained in
a range of less than 100 mT and preferably less than 50 mT during a
first etchant etch step. In a particular embodiment, for example,
pressure within chamber 110 could be maintained at about 20 mT. It
is to be appreciated that the steps of introducing a gaseous first
etchant, igniting the first etchant into a plasma and controlling
the pressure within the chamber are presented and described here
serially for clarity. One of ordinary skill will appreciate that
the steps could be performed in a different order or nearly
simultaneously.
[0072] Next according to step 310, etch a portion of the layer in a
mask structure with the first etchant. As previously discussed,
steps 310, 315 and 320 are used to determine the effect of the mask
structure variations in line density, critical dimension and open
area percentage on the etch rate of a first etchant. In particular,
when the mask structure open area percentage is about or greater
than 20, the etch rate variation of a first etchant that includes a
fluorine source, and oxygen source and a fluorocarbon source is
evaluated. It is to be appreciated that high open area percentage
mask structure here also include regions having different critical
dimensions, line spacing and line density.
[0073] Once initial layer thickness measurements are taken on the
mask structure, the substrate is loaded into a processing chamber
and exposed to an embodiment of the first etchant that includes a
fluorine source, an oxygen source and a fluorocarbon source. In an
embodiment of the first etchant according to the present invention,
the first etchant is ignited into a plasma. The mask structure is
exposed to the plasma for a period of time sufficient to obtain an
average etch rate. In general, etching periods of about 90 seconds
to about 300 seconds are sufficient to evaluate etch rate. The
length of time needed to evaluate the relative etch rates will vary
depending upon several factors, such as, line density and critical
dimension of the mask structure, for example.
[0074] After measuring post etch layer thicknesseses, the etch rate
may be easily calculated. Once the first etchant etch rate for the
various regions of the mask structure is calculated, the etch rates
are compared to determine a region with a fastest etch rate (Step
315). Once a region with a fastest etch rate is determined, the
duration of the first etchant etch step is obtained by estimating
how long it will take a fastest etching region to etch the layer
(step 320).
[0075] FIG. 7 illustrates a masking structure 600 at the end of a
first etchant etch step with a duration of the etch has been
selected in accordance with the present invention. In this example,
mask structure 612 is the fastest etching region (step 315) and the
duration of the first etchant etch is sufficiently long so that
layer 653 within structure 652 is etched during the first etchant
etch. For example, FIG. 7 represents an optimized first etchant
etch step for a representative mask structure 600 where the first
etchant etch duration has been set so that the silicon layer in
medium density structure 612 (i.e., a fastest etching region) is
completely etched during the first etchant etch step. FIG. 7, like
FIG. 5, illustrates the fact that different thicknesses of silicon
layer 653 will remain in the various mask regions at the end of the
first etchant etch step.
[0076] Once the first etchant etch step has been determined for a
mask structure, the second etchant etch step is selected according
to steps 325-340. As described above with regard to FIG. 5 and the
earlier described second etchant etch process, several factors are
considered when evaluating the second etchant etch. First, the
second etchant should etch the layer remaining in the mask
structure at the end of the first step at a commercially reasonable
rate. Turning briefly to FIG. 7 which represents the masking
structure 600 at the end of a first etchant etch. As expected,
portions of the mask structure 600 having etch rates slower than
the high etch rate region 612 will have silicon layers 653 of
various thicknesses remaining at the end of the first etchant
etch., In mask structure 600, for example, mask structure 656
etched the fastest, isolated line 610 etched next fastest and
high-density region 615 etched the slowest. Accordingly, silicon
layer 653 has been removed in region 612 (i.e., a fastest etching
region) and different amounts of silicon layer 653 remain to be
etched in the slower etching regions 615 and 610.
[0077] A second consideration in evaluating that the second etchant
is selectivity to an underlying layer. Selectivity is important so
that if the layer is removed in an area prior to the end of the
second etchant etch process, erosion of the underlying layer in
that area is minimized. A third consideration is the ability of a
particular second etchant to provide sidewall passivation to
prevent lateral erosion of the layer thereby maintaining profile
control of the layer. A fourth consideration is reducing the
probability of black silicon formation when etching a mask
structure having an open area percentage of about or greater than
20. An embodiment of a second etchant in accordance with the
present invention may be selected to address these
considerations.
[0078] In an embodiment of the second etchant according to the
present invention, the second etchant includes HBr and O.sub.2. In
another embodiment of the second etchant of the present invention,
substantially all of the second etchant is HBr and the second
etchant is formed into a plasma. In one specific embodiment of the
second etchant, the second etchant includes HBr and O.sub.2
wherein, the ratio of the HBr flow rate to the oxygen flow rate is
more than 45:1. In one preferred embodiment, the ratio of the HBr
flow rate to the oxygen flow rate is about 48:1. In an alternative
embodiment, the second etchant includes HBr and O.sub.2 where the
O.sub.2 provides from about 2 percent to less than about 5 percent
of the second etchant. In another embodiment the HBr flow rate is
more than 200 sccm and the oxygen flow rate is less than 10 sccm.
In a specific preferred embodiment of the second etchant, the HBr
flow rate is about 240 sccm and the O.sub.2 flow rate is about 5
sccm.
[0079] In yet another embodiment of the second etchant according to
the present invention, the second etch and is a plasma that
includes HBr and chlorine. A preferred chlorine source is Cl.sub.2.
In one embodiment, the second etchant etch process is conducted by
a plasma formed from HBr and Cl.sub.2 where at least about 60
percent of the second etchant is provided by HBr. In yet another
embodiment of the second etchant, the second etchant etch is
conducted by a plasma formed from HBr and Cl.sub.2 where at least
about 30 percent of the second etchant is Cl.sub.2. In one specific
embodiment of the second etchant, the second etchant includes HBr
and Cl.sub.2 where the HBr flow rate is greater than about 100 sccm
and the ratio of the HBr flow rate to the Cl.sub.2 flow rate is at
least about 2:1. In an alternative embodiment of the second
etchant, the second etchant includes HBr and Cl.sub.2 where the
flow rate of the HBr is at least about twice the Cl.sub.2 flow
rate. In another embodiment, the flow rate of the Cl.sub.2 is about
60 sccm.
[0080] In one embodiment of the present invention, the second
etchant is a plasma etch. In the case where the second etchant is
provided into an etch chamber, for example in a DPS chamber like
chamber 110 of FIG. 3, a second etchant may be formed into a plasma
by applying RF energy from the source 118 and bias 122 RF
generators. Generally, the source RF generator 118 provides mostly
inductive power for the formation of and control of the plasma
density and bias RF generator 122 provides bombardment energy and
directionality of ions onto the substrate 114.
[0081] In another embodiment of the second etchant according to the
present invention, a second etchant is a plasma formed from a
source RF power level of more than about 1500 Watts and bias RF
power level of more than about 150 Watts. In a specific embodiment,
the source RF power level is more than about 1500 Watts in the
ratio of the source RF power level to the bias RF power level is
about 8:1. In another specific embodiment, the bias RF power level
is about 200 Watts and the ratio of the source RF power level to
the bias RF power level is about 8:1. In one preferred embodiment,
the source RF power level is about 1600 Watts and bias RF power
level is about 200 Watts.
[0082] In an alternative embodiment of the second etchant according
to the present invention, a second etchant is a plasma formed from
a source RF power level of at least about 1000 Watts with a ratio
of source RF power level to bias RF power level of at least about
5:1. In a specific embodiment, the bias RF power level is at least
about 200 Watts and the ratio of the source RF power level to the
bias RF power level is at least about 5:1. A specific embodiment,
the source RF power level is about 1000 Watts and the bias RF power
level is about 200 Watts.
[0083] Referring for example to FIG. 3 and chamber 110, throttle
valve 127 may be used to regulate pressure during an etch using an
embodiment of the second etchant. In several embodiments of the
second etchant according to the present invention, pressure is
maintained in a range of less than about 100 mT. In a particular
embodiment of the second etchant, a pressure maintained during the
second etchant etch step is about the same as a pressure maintained
during the first etchant etch step. In another embodiment of the
present invention, the pressure used during the second etchant etch
is less than the pressure used during the first etchant etch and,
preferably, the second etchant etch is conducted at a pressure that
is about half of the pressure at which the first etchant etch is
conducted.
[0084] In one preferred embodiment of the present invention, the
second etchant etch step is conducted at about 20 mT. In another
preferred embodiment, the second etchant etch step is conducted at
a pressure of about 10 mT. In yet another preferred embodiment,
both the first and second etchant are plasmas and the plasma etch
processes are conducted at a pressure of about 20 mT. In a specific
preferred embodiment, the first and second etchants are formed into
plasmas and the first etchant plasma etch is conducted at a
pressure of about 20 mT and the second etchant plasma etch is
conducted at a pressure of about 10 mT.
[0085] Once a suitable second etchant etch process is selected, two
determinations are made to optimize the second etchant etch to a
particular mask structure. First, as set forth in step 335,
determine a region of the mask structure with a slowest etch rate.
Second, as set forth in step 340, determine the duration of the
second etchant etch. However, the determinations of steps 335 and
340 and the exposure and etch of steps 325 and 330 are based upon
the state of the etch process at the end of the first etchant etch.
The second etchant etch begins where the first etchant etch
stopped. Accordingly, evaluation of the relationship between a
second step etchant etch rate and the structural variations of a
mask begins with the mask structure as it appears at the end of
etching with a first etchant according to the present invention. In
other words, referring to FIG. 7 and an embodiment of the present
invention where a first and a second etchant are formed into
plasmas, the second etchant plasma etch is evaluated on a mask
structure 600 that has been etched by a first etchant plasma etch
process determine according to steps 305-320. In an example of one
such etched mask structure is illustrated in FIG. 7 where in masked
structure 612 the first etchant plasma etched through polysilicon
layer 653 while end mask structure 651 the first etchant plasma did
not etch through polysilicon layer 653.
[0086] According to steps 325 and 330, expose the structure to a
second etchant and etch a portion of a layer with the second
etchant. These steps refer to the process of exposing the mask
structure etched by a first etchant etch according to the present
invention to a second etchant etch for a period of time sufficient
to determine the etch rates in the various mask structure regions.
Referring by way of example to FIG. 7, the etch rate of isolated
line region 610 is compared to the etch rate of high-density line
region 615.
[0087] Determining a region of the layer with a slowest etch rate
(step 335) is determined by comparing the layer thickness in each
of the mask regions before and after etching according to step 330.
The change in layer thickness is then divided by the duration of
the etch to determine the etch rate for the various regions. Once a
slowest etch rate region is selected, the duration of the second
etchant etch (step 340) is determined by how long it will take to
etch the layer in a slowest etching region. It is believed that
setting the duration of the second etchant etch step based upon the
etch rate of a slowest etch rate region achieves complete removal
of the layer while minimizing erosion of the exposed underlying
layer and lateral erosion of the layer.
[0088] Evaluation of the relative etch rates in the various mask
structure regions may be better appreciated through reference to
FIG. 7. FIG. 7 represents the relative thicknesses of polysilicon
layer 653 after etching with a first etchant according to the
present invention where region 612 of structure 652 is a fastest
etching region. The initial thicknesses of polysilicon layer 653 in
region 615 and region 610 are taken. The mask structure 600 of FIG.
7 is exposed to an embodiment of the second etchant according to
the present invention. After exposing the structure to the second
etchant for a sufficient period of time to evaluate etch rate, the
post etch thicknesses of the polysilicon layer 653 in regions 615
and 610 are measured. The change in layer thickness is divided by
the duration of the etch to determine the etch rate in each region.
Once a slowest etching region is selected, the duration of the
second etchant etch (step 340) is determined by how long it will
take to second etchant to etch the silicon layer 653 remaining in
the slowest etching region at the end of a first etchant etch. It
is believed that setting the duration of the second etchant etch
step based upon a slowest etch rate region achieves complete
removal of the silicon layer 653 while minimizing erosion of the
buried oxide layer 655 and lateral erosion of silicon layer
653.
[0089] Next, decision step 345 is used to determine whether or not
additional wafers are to be etched. Once an embodiment of a two
etchant etch method according to the present invention has been
determined for a particular mask structure, that to etching method
may be used to process additional substrates having a similar mask
structure. Thus, a mask structure representative of a number of
wafers may be used to determine a suitable embodiment of a two
etchant etch method according to steps 305 through 340 of the
present invention. Then, in steps 345 and 350, additional wafers
having a similar mask structure are etched using the two etchant
etch method determined for that particular mask structure. Once the
additional wafers having a similar mask structure have been etched
(i.e., the answer to decision block 345 is "No"), etching according
to the present invention is complete.
[0090] Some embodiments of a two etchant etch method according to
the present invention may be better appreciated through reference
to the specific examples that follow.
[0091] In a specific embodiment of a to etchant etch method
according to the present invention, the method is determined for a
silicon on insulator structure, where a first etchant is a plasma
that etches silicon at a rate of between about 2 .mu.m/min. to
about 4 .mu.m/min. formed from a mixture of about equal parts
SF.sub.6,HBr and O.sub.2 at a pressure of about 25 mT and a source
RF power level less than about 1000 Watts and a ratio of source RF
power level to bias RF power level of about 35:1, and
[0092] a second etchant is a plasma formed from mostly HBr at a
pressure of lower than the first etchant plasma etch pressure with
a source RF power level more than twice the source RF power level
of the first etchant plasma and a ratio of the source RF power
level to the bias RF power level of about 8:1.
[0093] In another specific embodiment of a two etchant etch method
according to the present invention, the first and second etchant
are plasmas optimized for a silicon on insulator structure
where,
[0094] a first etch and plasma is formed from SF.sub.6, HBr and
O.sub.2 where the HBr and the O.sub.2 are provided at about equal
rates and the SF.sub.6 is provided at a rate that is less than each
of the HBr and O.sub.2 rates, at a pressure of about 25 mT, ignited
by a source RF power level of about 700 Watts and a bias RF power
level of less than about 50 Watts, and
[0095] a second etchant plasma is formed from HBr and O.sub.2 where
the flow rate of the HBr is about 40 times flow rate of the O.sub.2
and the flow rate of the O.sub.2 is less than about 10 sccm; at a
pressure of about 20 mT; ignited by a source RF power level in the
second etchant plasma that is more than twice the source RF power
level in the first etchant plasma and a bias RF power level in the
second etchant plasma that is about 10 times the bias RF power
level of the first etchant plasma wherein the selectivity of the
second etchant plasma to an underlying layer in the silicon on
insulator structure is at least about 35:1.
[0096] In a preferred embodiment, a first etchant plasma is formed
from a mixture of about 55 sccm SF.sub.6, about 60 sccm HBr and
about 60 sccm O.sub.2 at a pressure of about 25 mT; a source RF
power level of about 700 Watts and a bias RF power level of about
20 Watts, and
[0097] a second etchant plasma is formed from a gaseous mixture of
about 240 sccm HBr and less than about 10 sccm O.sub.2, a pressure
of about 20 mT, a source RF power level of about 1600 Watts and
bias RF power level of the least about 200 Watts, and a selectivity
of the second etchant plasma to an underlying layer of at least
about 40:1.
[0098] In another specific embodiment of a two etchant etch method
according to the present invention, the first and second etchant
are plasmas optimized to etch a polysilicon layer of a silicon on
insulator structure having an open area percentage of greater than
or about 20 percent, where
[0099] a first etchant plasma is formed from a gaseous mixture of a
fluorine source gas, a fluorocarbon source gas and an oxygen source
gas where the fluorine source gas flow rate is about twice the
fluorocarbon source gas flow rate and the oxygen source gas flow
rate is about three times the fluorocarbon source gas flow rate,
the pressure is maintained at less than about 50 mT and the plasma
is formed by igniting the gaseous mixture with a source RF power
level of less than about 1000 Watts where the ratio of the source
RF power level to the bias RF power level it is at least about 25
to 1, and
[0100] a second etchant plasma is formed from a gaseous mixture of
mostly HBr at the same pressure as the first etchant plasma, with a
source RF power level that is more than twice the first etchant
plasma source RF power level and a bias RF power level that is more
than six times the first etchant plasma bias RF power level.
[0101] In yet another specific embodiment of a two etchant etch
method according to the present invention, the first and second
etchant are plasmas, optimized for etching a silicon layer in a
mask structure having an open area percentage greater than or about
20, wherein
[0102] a first etchant plasma is formed from a gaseous mixture of
about 60 sccm SF.sub.6, about 90 sccm O.sub.2 and about 30 sccm
C.sub.4F.sub.8 at a pressure of about 20 mT and a bias RF power
level of less than about 50 Watts and a ratio of the source RF
power level to the bias RF power level of at least about 25 to
1,
[0103] a second etchant plasma is formed from a gaseous mixture of
HBr and O.sub.2 where the ratio of the HBr flow rate to the O.sub.2
flow rate is at least about 48:1 and the HBr flow rate is less than
about 250 sccm; the pressure in the second etchant plasma etch is
about the same as the pressure in first etchant plasma etch and the
source RF power level is more than about 1500 Watts and the ratio
of the source RF power level to the bias RF power level is at least
about 5:1. In a preferred embodiment of the second etchant plasma
etch, a source RF power level is about 1600 Watts and a bias RF
power level is at least about 200 Watts.
[0104] In a preferred embodiment, a first etchant plasma is formed
from a gaseous mixture that includes a fluorine source gas, an
oxygen source gas and a fluorocarbon source gas where the flow rate
of the fluorocarbon source gas is less than about 50 sccm, the flow
rate of the fluorine source gas is about twice the flow rate of the
fluorocarbon source gas and the flow rate of the oxygen source gas
is about three times the flow rate of the fluorocarbon source gas;
the source RF power level is maintained at about 700 Watts and the
bias RF power level is about 30 Watts and the pressure is about 20
mT;
[0105] a second etchant plasma is formed from a gaseous mixture of
HBr and O.sub.2 where HBr are makes up about 98% of the second
etchant total gas flow; the pressure is maintained at about 20 mT,
the source RF power level is about 1600 Watts and the second plasma
bias RF power level is more than about six times the first plasma
bias RF power level.
[0106] In another embodiment, a two etchant plasma etch method
according to the present invention is used to etch a layer that is
part of a high open area percentage structure. The plasma etch
method has a first etchant plasma formed from a gaseous mixture
that includes a fluorine source gas, an oxygen source gas and a
fluorocarbon source gas where the fluorine source gas flow rate is
about three times the fluorocarbon source gas flow rate, the oxygen
source gas flow rate is more than about four times the fluorocarbon
source gas flow rate, the pressure is maintained at about 20 mT,
and the source RF power level is less than about 1000 Watts and the
ratio of the source RF power level to the bias RF power level is at
least about 10:1; and
[0107] a second etchant plasma formed from a gaseous mixture of HBr
and Cl.sub.2 at a pressure of less than the first etchant plasma
pressure, with a source RF power level of about 1000 Watts and a
bias RF power level in the second plasma that is more than 2.5
times the bias RF power level in the first plasma.
[0108] In another specific embodiment, a first etchant plasma is
formed from a gaseous mixture of SF.sub.6, O.sub.2 and
C.sub.4F.sub.8 where the combined SF.sub.6 and C.sub.4F.sub.8 flow
is less than the total O.sub.2 flow, the bias RF power level is
less than about 100 Watts and the source RF power level is about 10
times the bias RF power level and the pressure is about 20 mT,
and
[0109] a second etchant plasma is formed from a gaseous mixture of
HBr and Cl.sub.2 where the Cl.sub.2 flow rate is less than about
100 sccm and the HBr flow rate is at least about twice the Cl.sub.2
flow rate, the source and bias RF power levels in the second plasma
are greater than the source and bias RF power levels in the first
plasma and the ratio of the second plasma bias RF power level to
the first plasma bias RF power level is at least about 2:1.
[0110] In another specific embodiment, a layer within the structure
is formed from polysilicon and the structure has an open area
percentage of at least about 80 percent, a first etchant plasma is
formed from a gaseous mixture of SF.sub.6, O.sub.2 and
C.sub.4F.sub.8 where the SF.sub.6 is it least about 30 percent of
the first etchant, the O.sub.2 is at least about 50 percent of the
first etchant and the C.sub.4F.sub.8 makes up at least about 10
percent of the etchant; that a pressure maintained at about 20 mT,
with a source RF power level of at least about 700 Watts and a bias
RF power level of at least about 70 Watts; and
[0111] a second etchant plasma is formed from a gaseous mixture
where HBr makes up at least about 60 percent of second etchant and
Cl.sub.2 makes up at least about 30 percent of the second etchant;
at a pressure maintained at about 10 mT, with a the source RF power
level of about 1000 Watts and the bias RF power level of about 200
Watts.
[0112] In another specific embodiment of a two etchant etch method
according to the present invention, a layer of silicon that is part
of a mask structure having a high open area percentage is etched
using a two etchant plasma etch method where,
[0113] the source RF power level is less than about 1000 Watts and
the ratio of the source RF power level to the bias RF power level
is between about 20:1 and about 30:1, and preferably the source RF
power level is from between about 500 Watts to about 2000 Watts and
the ratio of the source RF power level to the bias RF power level
is from about 20:1 to about 28:1, and
[0114] a first etchant plasma is formed from a gaseous mixture of
SF.sub.6, O.sub.2 and C.sub.4F.sub.8 where between about 19 percent
to about 41 percent of the first etchant is provided by SF.sub.6;
between about 41 percent to about 57 percent of the first etchant
is provided by O.sub.2; and between about 14 percent to about 24
percent of the first etchant is provided by C.sub.4F.sub.8; or,
alternatively,
[0115] a first etchant is a plasma formed from SF.sub.6, O.sub.2
and C.sub.4F.sub.8 and having about equal parts SF.sub.6, and
O.sub.2 with the remainder of the first etchant provided by
C.sub.4F.sub.8, where preferably, the C.sub.4F.sub.8 is less than
about 20% of the first etchant, and more preferably, the
C.sub.4F.sub.8 is about 17% of the first etchant; or,
alternatively,
[0116] a first etchant is a plasma formed from SF.sub.6, O.sub.2
and C.sub.4F.sub.8 where the amounts of SF.sub.6 and O.sub.2 in the
first etchant are at least about twice the amount of C.sub.4F.sub.8
in the first etchant and, preferably, the percentage of O.sub.2 in
the first etchant is greater than the percentage of SF.sub.6 in the
first etchant; or alternatively,
[0117] a first etchant plasma is formed from a gaseous mixture of
SF.sub.6, O.sub.2 and C.sub.4F.sub.8 where about half the total gas
flow is provided by O.sub.2, and about 20% of the total gas flow is
provided by C.sub.4F.sub.8; or alternatively,
[0118] a first etchant plasma is formed from a gaseous mixture of
SF.sub.6, O.sub.2 and C.sub.4F.sub.8 where about half the total gas
flow in the first step is provided by O.sub.2 and the remainder of
the total gas flow is provided by equal parts SF.sub.6, and
C.sub.4F.sub.8, and preferably, SF.sub.6makes up about 26% of the
first step total flow and C.sub.4F.sub.8 makes up about 22% of the
first step total flow; or alternatively,
[0119] a first etchant plasma is formed from a gaseous mixture of
SF.sub.6, O.sub.2 and C.sub.4F.sub.8 where about half the total gas
flow in the first step is provided by O.sub.2 and SF.sub.6 makes up
about 20% of the total gas flow, and, preferably, about half the
total gas flow in the first step is provided by O.sub.2 and the
remainder of the total gas flow is about 19% SF.sub.6 and about 24%
C.sub.4F.sub.8; or, alternatively,
[0120] a first etchant plasma is formed from a gaseous mixture of
SF.sub.6, O.sub.2 and C.sub.4F.sub.8 where about 30% of the first
etchant is provided by SF.sub.6 and about 15% of the first etchant
is provided by C.sub.4F.sub.8; or, alternatively,
[0121] a first etchant plasma is formed from SF.sub.6, O.sub.2 and
C.sub.4F.sub.8 where more than half the first etchant is provided
by 2, less than 20% of the first etchant is provided by
C.sub.4F.sub.8, and preferably, more than half the first etchant is
provided by O.sub.2, C.sub.4F.sub.8 provides about 18% of the first
etchant and SF.sub.6 provides about 27% of the first etchant;
and
[0122] a second etchant plasma is conducted in accordance with an
embodiment of a second etchant etch step as set forth above.
[0123] It is to be appreciated that the present invention is not
limited to dry etching processes, plasma etching processes or to
etching silicon as part of a silicon on insulator structure. An
embodiment of the present invention provides an etch process that
etches a layer with a first etchant for a sufficient period of time
for the fastest etching portion of the layer to be etched. Next,
the layer is etched by a second etchant for a period of time
sufficient for a slowest etching portion of the layer to be etched.
In another embodiment of the present invention, the second etchant
provides a sidewall passivation to the layer being etched. In yet
another embodiment of the present invention, the second etchant is
selective to an underlying layer.
[0124] Although present invention has been disclosed illustratively
using a DPS process chamber, the invention is not limited to this
specific type of chamber and may be practiced in other etch
equipment. For example, a bias RF generator operating at another
frequency may be used to provide a comparable amount of RF power to
the support pedestal. For example, a bias RF generator providing 60
W at about 13 MHz is comparable to a bias RF generator providing 25
W at about 400 kHz.
[0125] Embodiments in accordance with the present invention may be
practiced in a variety of etch process chambers such as, for
example, a capacitively coupled etch chamber, a parallel plate,
capacitively coupled etch chamber, or an etch chamber that combines
capacitive and inductive coupling. Embodiments according to the
present invention may also be practiced using other conventional
dry etch techniques. For example, embodiment of the first and
second etchants may be activated remotely using well-known remote
activation methods and equipment and then provided to- an etch
process chamber to perform an etch process in accordance with the
teachings of the present invention.
[0126] Mention has been made of the poor thickness uniformity
associated with deposited silicon films and the ability of the
present invention to compensate for this variation. Embodiments of
the two step plasma etch method of the present invention may be
used to compensate for etch rate variations attributable to the
structural variations in the mask structure. It is to be
appreciated that embodiments of the two step plasma etch process of
the present invention may also be advantageously utilized to etch
layers formed within a mask structure where the layer exhibits
superior uniformity thickness or thickness uniformity of less than
4%. For example, embodiments of the present invention may be used
to etch an epitaxial silicon layer having superior thickness
uniformity that is part of an SOI structure. In this case, etch
rate variations induced by structural variations of the mask occur
even though the uniformity of the epitaxial layer is excellent. In
this regard, the two step plasma etch method of the present
invention, while illustratively described with regard to etching a
particular type of silicon layer in a specific SOI structure, the
inventive method may also be used to etch other types of silicon
layers, such as, for example, polysilicon, doped polysilicon,
amorphous silicon, or combinations thereof.
[0127] While embodiments of the low open area percentage etch
process of the present invention have been described with regard to
a silicon on insulator (SOI) structure, low open area percentage
structures may also occur in MEMS structure or structures combining
MEMS and electronics. Embodiments the low open area percentage, two
step plasma etch process may be used on these types of structures
as well. Similarly, while the high open area percentage etch
process has been described -with regard to a MEMS structure,
masking structures for electronics or for structures having a
combination of electronics and MEMS may also have high open area
percentages or open area percentages greater than about 20.
Embodiments of the high open area percentage, two step plasma etch
method of the present invention may be utilized on these structures
as well.
[0128] These, and other modifications, will occur to those of
ordinary skill in the art of silicon etching and are included
within the scope of the present invention, which is limited only by
the claims that follow.
* * * * *