| Patent | Date |
|---|
Methods of Design and Use of High Mobility P-Type Metal Oxides
App 20220115503 - Cho; Kyeongjae ; et al. | 2022-04-14 |
Cardiac Muscle-Cell-Based Coupled Oscillator Network for Collective Computing and Related Methods
App 20220060150 - Zorlutuna; Pinar ; et al. | 2022-02-24 |
Gate Electrode Having A Capping Layer
App 20210265482 - DEWEY; Gilbert ; et al. | 2021-08-26 |
Method and system for anomaly detection, missing data imputation and consumption prediction in energy data
Grant 11,089,108 - Shah , et al. August 10, 2 | 2021-08-10 |
Gate Electrode Having A Capping Layer
App 20210242325 - DEWEY; Gilbert ; et al. | 2021-08-05 |
Gate electrode having a capping layer
Grant 11,031,482 - Dewey , et al. June 8, 2 | 2021-06-08 |
Method For Fabricating Transistor With Thinned Channel
App 20210135007 - Brask; Justin K. ; et al. | 2021-05-06 |
Non-volatile Multi-level Cell Memory Using A Ferroelectric Superlattice And Related Systems
App 20210098060 - Ni; Kai ; et al. | 2021-04-01 |
Method for fabricating transistor with thinned channel
Grant 10,937,907 - Brask , et al. March 2, 2 | 2021-03-02 |
Low power sense amplifier based on phase transition material
Grant 10,839,880 - Gupta , et al. November 17, 2 | 2020-11-17 |
Gate Electrode Having A Capping Layer
App 20200295153 - DEWEY; Gilbert ; et al. | 2020-09-17 |
Gate electrode having a capping layer
Grant 10,707,319 - Dewey , et al. | 2020-07-07 |
Systems and methods for analyzing sensor data using incremental autoregression techniques
Grant 10,678,886 - Mukherjee , et al. | 2020-06-09 |
Nonvolatile digital computing with ferroelectric FET
Grant 10,672,475 - Li , et al. | 2020-06-02 |
Nonvolatile Digital Computing with Ferroelectric FET
App 20200027508 - Li; Xueqing ; et al. | 2020-01-23 |
Method For Fabricating Transistor With Thinned Channel
App 20190371940 - Brask; Justin K. ; et al. | 2019-12-05 |
Nonvolatile digital computing with ferroelectric FET
Grant 10,475,514 - Li , et al. Nov | 2019-11-12 |
Method for fabricating transistor with thinned channel
Grant 10,367,093 - Brask , et al. July 30, 2 | 2019-07-30 |
Low Power Sense Amplifier Based On Phase Transition Material
App 20190172514 - GUPTA; Sumeet Kumar ; et al. | 2019-06-06 |
Low power sense amplifier based on phase transition material
Grant 10,262,714 - Gupta , et al. | 2019-04-16 |
Extreme high mobility CMOS logic
Grant 10,141,437 - Datta , et al. Nov | 2018-11-27 |
Nonvolatile Digital Computing with Ferroelectric FET
App 20180330791 - Li; Xueqing ; et al. | 2018-11-15 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 10,121,897 - Chau , et al. November 6, 2 | 2018-11-06 |
Method And System For Anomaly Detecttion, Missing Data Imputation And Consumption Prediction In Energy Data
App 20180270312 - SHAH; Pranav Champaklal ; et al. | 2018-09-20 |
Forming arsenide-based complementary logic on a single substrate
Grant 9,991,172 - Hudait , et al. June 5, 2 | 2018-06-05 |
Method For Fabricating Transistor With Thinned Channel
App 20180047846 - Brask; Justin K. ; et al. | 2018-02-15 |
Low Power Sense Amplifier Based On Phase Transition Material
App 20170352394 - GUPTA; Sumeet Kumar ; et al. | 2017-12-07 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20170323972 - CHAU; Robert S. ; et al. | 2017-11-09 |
Method for fabricating transistor with thinned channel
Grant 9,806,195 - Brask , et al. October 31, 2 | 2017-10-31 |
Extreme High Mobility Cmos Logic
App 20170309734 - DATTA; Suman ; et al. | 2017-10-26 |
Low power nanoelectronics
Grant 9,800,094 - Liu , et al. October 24, 2 | 2017-10-24 |
Semiconductor device structures and methods of forming semiconductor structures
Grant 9,761,724 - Brask , et al. September 12, 2 | 2017-09-12 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 9,748,391 - Chau , et al. August 29, 2 | 2017-08-29 |
Systems And Methods For Analyzing Sensor Data Using Incremental Autoregression Techniques
App 20170208081 - Mukherjee; Debnath ; et al. | 2017-07-20 |
Extreme high mobility CMOS logic
Grant 9,691,856 - Datta , et al. June 27, 2 | 2017-06-27 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20170170318 - Chau; Robert S. ; et al. | 2017-06-15 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 9,614,083 - Chau , et al. April 4, 2 | 2017-04-04 |
Extreme high mobility CMOS logic
Grant 9,548,363 - Datta , et al. January 17, 2 | 2017-01-17 |
Fabrication Of Channel Wraparound Gate Structure For Field-effect Transistor
App 20160308014 - Radosavljevic; Marko ; et al. | 2016-10-20 |
Semiconductor Device Structures And Methods Of Forming Semiconductor Structures
App 20160293765 - Brask; Justin K. ; et al. | 2016-10-06 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20160284847 - Chau; Robert S. ; et al. | 2016-09-29 |
Strain inducing semiconductor regions
Grant 9,425,256 - Datta , et al. August 23, 2 | 2016-08-23 |
Power rectifier using tunneling field effect transistor
Grant 9,391,068 - Liu , et al. July 12, 2 | 2016-07-12 |
Method For Fabricating Transistor With Thinned Channel
App 20160197185 - Brask; Justin K. ; et al. | 2016-07-07 |
Gate Electrode Having A Capping Layer
App 20160197159 - Dewey; Gilbert ; et al. | 2016-07-07 |
Semiconductor device structures and methods of forming semiconductor structures
Grant 9,385,180 - Brask , et al. July 5, 2 | 2016-07-05 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 9,368,583 - Chau , et al. June 14, 2 | 2016-06-14 |
Method for fabricating transistor with thinned channel
Grant 9,337,307 - Brask , et al. May 10, 2 | 2016-05-10 |
Extreme High Mobility Cmos Logic
App 20160111423 - Datta; Suman ; et al. | 2016-04-21 |
Gate electrode having a capping layer
Grant 9,287,380 - Dewey , et al. March 15, 2 | 2016-03-15 |
Low Power Nanoelectronics
App 20150333534 - Liu; Huichu ; et al. | 2015-11-19 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20150236100 - Chau; Robert S. ; et al. | 2015-08-20 |
Forming Arsenide-Based Complementary Logic On A Single Substrate
App 20150214118 - Hudait; Mantu K. ; et al. | 2015-07-30 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 9,048,314 - Chau , et al. June 2, 2 | 2015-06-02 |
Semiconductor Device Structures And Methods Of Forming Semiconductor Structures
App 20150102429 - Brask; Justin K. ; et al. | 2015-04-16 |
Forming arsenide-based complementary logic on a single substrate
Grant 9,006,707 - Hudait , et al. April 14, 2 | 2015-04-14 |
Power Rectifier Using Tunneling Field Effect Transistor
App 20150043260 - Liu; Huichu ; et al. | 2015-02-12 |
Semiconductor device structures and methods of forming semiconductor structures
Grant 8,933,458 - Brask , et al. January 13, 2 | 2015-01-13 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20140361363 - Chau; Robert S. ; et al. | 2014-12-11 |
Extreme High Mobility Cmos Logic
App 20140291615 - Datta; Suman ; et al. | 2014-10-02 |
Strain-inducing semiconductor regions
Grant 8,841,180 - Datta , et al. September 23, 2 | 2014-09-23 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 8,816,394 - Chau , et al. August 26, 2 | 2014-08-26 |
Extreme high mobility CMOS logic
Grant 8,802,517 - Datta , et al. August 12, 2 | 2014-08-12 |
Gate electrode having a capping layer
Grant 8,803,255 - Dewey , et al. August 12, 2 | 2014-08-12 |
Strain-inducing Semiconductor Regions
App 20140103396 - Datta; Suman ; et al. | 2014-04-17 |
Gate Electrode Having A Capping Layer
App 20140103458 - Dewey; Gilbert ; et al. | 2014-04-17 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20140103456 - Chau; Robert S. ; et al. | 2014-04-17 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 8,664,694 - Chau , et al. March 4, 2 | 2014-03-04 |
Semiconductor Device Structures And Methods Of Forming Semiconductor Structures
App 20140035009 - Brask; Justin K. ; et al. | 2014-02-06 |
TFET based 4T memory devices
Grant 8,638,591 - Saripalli , et al. January 28, 2 | 2014-01-28 |
Strain-inducing Semiconductor Regions
App 20130344668 - Datta; Suman ; et al. | 2013-12-26 |
Extreme High Mobility Cmos Logic
App 20130328015 - Datta; Suman ; et al. | 2013-12-12 |
Semiconductor device structures and methods of forming semiconductor structures
Grant 8,581,258 - Brask , et al. November 12, 2 | 2013-11-12 |
Strain inducing semiconductor regions
Grant 8,530,884 - Datta , et al. September 10, 2 | 2013-09-10 |
Extreme high mobility CMOS logic
Grant 8,518,768 - Datta , et al. August 27, 2 | 2013-08-27 |
Gate Electrode Having A Capping Layer
App 20130161766 - Dewey; Gilbert ; et al. | 2013-06-27 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20130146945 - Chau; Robert S. ; et al. | 2013-06-13 |
Strain-inducing semiconductor regions
Grant 8,421,059 - Datta , et al. April 16, 2 | 2013-04-16 |
Tri-gate transistor device with stress incorporation layer and method of fabrication
Grant 8,405,164 - Hareland , et al. March 26, 2 | 2013-03-26 |
Gate electrode having a capping layer
Grant 8,390,082 - Dewey , et al. March 5, 2 | 2013-03-05 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 8,368,135 - Chau , et al. February 5, 2 | 2013-02-05 |
CMOS devices with a single work function gate electrode and method of fabrication
Grant 8,294,180 - Doyle , et al. October 23, 2 | 2012-10-23 |
Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned SI to SIGE conversion processes and structures formed thereby
Grant 8,288,233 - Jin , et al. October 16, 2 | 2012-10-16 |
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
Grant 8,273,626 - Hareland , et al. September 25, 2 | 2012-09-25 |
Mechanism for forming a remote delta doping layer of a quantum well structure
Grant 8,264,004 - Jin , et al. September 11, 2 | 2012-09-11 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20120205729 - Chau; Robert S. ; et al. | 2012-08-16 |
Extreme High Mobility Cmos Logic
App 20120199813 - Datta; Suman ; et al. | 2012-08-09 |
Transistor gate electrode having conductor material layer
Grant 8,237,234 - Murthy , et al. August 7, 2 | 2012-08-07 |
Increasing the surface area of a memory cell capacitor
Grant 8,232,588 - Doyle , et al. July 31, 2 | 2012-07-31 |
High hole mobility p-channel Ge transistor structure on Si substrate
Grant 8,217,383 - Hudait , et al. July 10, 2 | 2012-07-10 |
Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
Grant 8,193,567 - Kavalieros , et al. June 5, 2 | 2012-06-05 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 8,183,646 - Chau , et al. May 22, 2 | 2012-05-22 |
Tfet Based 6t Sram Cell
App 20120106236 - Singh; Jawar ; et al. | 2012-05-03 |
Substrate band gap engineered multi-gate pMOS devices
Grant 8,169,027 - Doyle , et al. May 1, 2 | 2012-05-01 |
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
Grant 8,148,786 - Kavalieros , et al. April 3, 2 | 2012-04-03 |
Capacitor, method of increasing a capacitance area of same, and system containing same
Grant 8,138,042 - Doyle , et al. March 20, 2 | 2012-03-20 |
Strain-inducing Semiconductor Regions
App 20120061649 - Datta; Suman ; et al. | 2012-03-15 |
Inducing strain in the channels of metal gate transistors
Grant 8,129,795 - Datta , et al. March 6, 2 | 2012-03-06 |
High hole mobility semiconductor device
Grant 8,124,959 - Hudait , et al. February 28, 2 | 2012-02-28 |
Tensile strained NMOS transistor using group III-N source/drain regions
Grant 8,120,065 - Datta , et al. February 21, 2 | 2012-02-21 |
Forming integrated circuits with replacement metal gate electrodes
Grant 8,119,508 - Kavalieros , et al. February 21, 2 | 2012-02-21 |
Semiconductor Device Structures And Methods Of Forming Semiconductor Structures
App 20120032237 - Brask; Justin K. ; et al. | 2012-02-09 |
Tfet Based 4t Memory Devices
App 20110299326 - SARIPALLI; VINAY ; et al. | 2011-12-08 |
Semiconductor device structures and methods of forming semiconductor structures
Grant 8,071,983 - Brask , et al. December 6, 2 | 2011-12-06 |
Transistor Gate Electrode Having Conductor Material Layer
App 20110186912 - Murthy; Anand ; et al. | 2011-08-04 |
Dielectric interface for group III-V semiconductor device
Grant 7,989,280 - Brask , et al. August 2, 2 | 2011-08-02 |
Cmos Devices With A Single Work Function Gate Electrode And Method Of Fabrication
App 20110180851 - Doyle; Brian S. ; et al. | 2011-07-28 |
Fabrication Of Channel Wraparound Gate Structure For Field-effect Transistor
App 20110156145 - Radosavljevic; Marko ; et al. | 2011-06-30 |
Gate Electrode Having A Capping Layer
App 20110156174 - Dewey; Gilbert ; et al. | 2011-06-30 |
Transistor gate electrode having conductor material layer
Grant 7,968,957 - Murthy , et al. June 28, 2 | 2011-06-28 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
Grant 7,960,794 - Doyle , et al. June 14, 2 | 2011-06-14 |
Forming abrupt source drain metal gate transistors
Grant 7,951,673 - Lindert , et al. May 31, 2 | 2011-05-31 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20110121393 - Chau; Robert S. ; et al. | 2011-05-26 |
Inducing Strain in the Channels of Metal Gate Transistors
App 20110115028 - Datta; Suman ; et al. | 2011-05-19 |
Capacitor, Method Of Increasing A Capacitance Area Of Same, And System Containing Same
App 20110079837 - Doyle; Brian S. ; et al. | 2011-04-07 |
Gate electrode having a capping layer
Grant 7,915,694 - Dewey , et al. March 29, 2 | 2011-03-29 |
Fabrication of channel wraparound gate structure for field-effect transistor
Grant 7,915,167 - Radosavljevic , et al. March 29, 2 | 2011-03-29 |
Method For Fabricating Transistor With Thinned Channel
App 20110062520 - Brask; Justin K. ; et al. | 2011-03-17 |
CMOS devices with a single work function gate electrode and method of fabrication
Grant 7,902,014 - Doyle , et al. March 8, 2 | 2011-03-08 |
Inducing strain in the channels of metal gate transistors
Grant 7,902,058 - Datta , et al. March 8, 2 | 2011-03-08 |
Block contact architectures for nanoscale channel transistors
Grant 7,898,041 - Radosavljevic , et al. March 1, 2 | 2011-03-01 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 7,893,506 - Chau , et al. February 22, 2 | 2011-02-22 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
Grant 7,888,221 - Kavalieros , et al. February 15, 2 | 2011-02-15 |
CMOS device with metal and silicide gate electrodes and a method for making it
Grant 7,883,951 - Brask , et al. February 8, 2 | 2011-02-08 |
Field effect transistor with metal source/drain regions
Grant 7,879,675 - Radosavljevic , et al. February 1, 2 | 2011-02-01 |
Thin transition layer between a group III-V substrate and a high-k gate dielectric layer
Grant 7,879,739 - Rachmady , et al. February 1, 2 | 2011-02-01 |
Nonplanar Semiconductor Device With Partially Or Fully Wrapped Around Gate Electrode And Methods Of Fabrication
App 20110020987 - Hareland; Scott A. ; et al. | 2011-01-27 |
Strain-inducing Semiconductor Regions
App 20110017978 - Datta; Suman ; et al. | 2011-01-27 |
Transistor Gate Electrode Having Conductor Material Layer
App 20110018031 - Murthy; Anand ; et al. | 2011-01-27 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode
Grant 7,875,937 - Metz , et al. January 25, 2 | 2011-01-25 |
Transistor gate electrode having conductor material layer
Grant 7,871,916 - Murthy , et al. January 18, 2 | 2011-01-18 |
High Hole Mobility P-channel Ge Transistor Structure On Si Substrate
App 20100327261 - Hudait; Mantu K. ; et al. | 2010-12-30 |
Method for fabricating transistor with thinned channel
Grant 7,858,481 - Brask , et al. December 28, 2 | 2010-12-28 |
Capacitor, method of increasing a capacitance area of same, and system containing same
Grant 7,859,081 - Doyle , et al. December 28, 2 | 2010-12-28 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20100295129 - Chau; Robert S. ; et al. | 2010-11-25 |
Strain-inducing semiconductor regions
Grant 7,825,400 - Datta , et al. November 2, 2 | 2010-11-02 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 7,825,481 - Chau , et al. November 2, 2 | 2010-11-02 |
Unity beta ratio tri-gate transistor static random access memory (SRAM)
Grant 7,825,437 - Pillarisetty , et al. November 2, 2 | 2010-11-02 |
Spacer patterned augmentation of tri-gate transistor gate length
Grant 7,820,512 - Pillarisetty , et al. October 26, 2 | 2010-10-26 |
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
Grant 7,820,513 - Hareland , et al. October 26, 2 | 2010-10-26 |
Isolation Of Mim Fin Dram Capacitor
App 20100258908 - DOYLE; BRIAN S. ; et al. | 2010-10-14 |
Three-dimensional integrated circuit for analyte detection
App 20100248209 - Datta; Suman ; et al. | 2010-09-30 |
Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures
Grant 7,790,536 - Hudait , et al. September 7, 2 | 2010-09-07 |
High hole mobility p-channel Ge transistor structure on Si substrate
Grant 7,791,063 - Hudait , et al. September 7, 2 | 2010-09-07 |
Forming Integrated Circuits With Replacement Metal Gate Electrodes
App 20100219456 - Kavalieros; Jack ; et al. | 2010-09-02 |
Mechanism for Forming a Remote Delta Doping Layer of a Quantum Well Structure
App 20100219396 - Jin; Been-Yih ; et al. | 2010-09-02 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
Grant 7,785,958 - Doczy , et al. August 31, 2 | 2010-08-31 |
Increasing the surface area of a memory cell capacitor
Grant 7,776,684 - Doyle , et al. August 17, 2 | 2010-08-17 |
Nonplanar Device With Stress Incorporation Layer And Method Of Fabrication
App 20100200917 - Hareland; Scott A. ; et al. | 2010-08-12 |
Substrate Band Gap Engineered Multi-gate Pmos Devices
App 20100193840 - Doyle; Brian S. ; et al. | 2010-08-05 |
Increasing The Surface Area Of A Memory Cell Capacitor
App 20100181607 - Doyle; Brian S. ; et al. | 2010-07-22 |
Forming Abrupt Source Drain Metal Gate Transistors
App 20100151669 - Lindert; Nick ; et al. | 2010-06-17 |
Lateral undercut of metal gate in SOI device
Grant 7,736,956 - Datta , et al. June 15, 2 | 2010-06-15 |
Forming integrated circuits with replacement metal gate electrodes
Grant 7,718,479 - Kavalieros , et al. May 18, 2 | 2010-05-18 |
Tri-gate transistor device with stress incorporation layer and method of fabrication
Grant 7,714,397 - Hareland , et al. May 11, 2 | 2010-05-11 |
Mechanism for forming a remote delta doping layer of a quantum well structure
Grant 7,713,803 - Jin , et al. May 11, 2 | 2010-05-11 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 7,709,909 - Doczy , et al. May 4, 2 | 2010-05-04 |
Method of forming abrupt source drain metal gate transistors
Grant 7,704,833 - Lindert , et al. April 27, 2 | 2010-04-27 |
High mobility tri-gate devices and methods of fabrication
App 20100065888 - Shaheen; Mohamad A. ; et al. | 2010-03-18 |
Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode
Grant 7,671,471 - Brask , et al. March 2, 2 | 2010-03-02 |
Semiconductor device with reduced fringe capacitance
Grant 7,642,603 - Datta , et al. January 5, 2 | 2010-01-05 |
Transistor gate electrode having conductor material layer
Grant 7,642,610 - Murthy , et al. January 5, 2 | 2010-01-05 |
Field Effect Transistor With Metal Source/drain Regions
App 20090325350 - Radosavljevic; Marko ; et al. | 2009-12-31 |
Directing carbon nanotube growth
Grant 7,638,169 - Radosavljevic , et al. December 29, 2 | 2009-12-29 |
Transistor Gate Electrode Having Conductor Material Layer
App 20090315076 - Murthy; Anand ; et al. | 2009-12-24 |
Tensile Strained NMOS Transistor Using Group III-N Source/Drain Regions
App 20090302350 - Datta; Suman ; et al. | 2009-12-10 |
Independent n-tips for multi-gate transistors
Grant 7,629,643 - Pillarisetty , et al. December 8, 2 | 2009-12-08 |
Dopant Confinement In The Delta Doped Layer Using A Dopant Segregration Barrier In Quantum Well Structures
App 20090298266 - Hudait; Mantu K. ; et al. | 2009-12-03 |
Directing Carbon Nanotube Growth
App 20090283496 - Radosavljevic; Marko ; et al. | 2009-11-19 |
Cmos Device With Metal And Silicide Gate Electrodes And A Method For Making It
App 20090280608 - Brask; Justin K. ; et al. | 2009-11-12 |
Forming high-k dielectric layers on smooth substrates
Grant 7,615,441 - Brask , et al. November 10, 2 | 2009-11-10 |
Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
Grant 7,608,883 - Radosavljevic , et al. October 27, 2 | 2009-10-27 |
Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate
App 20090261391 - KAVALIEROS; Jack ; et al. | 2009-10-22 |
Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
Grant 7,601,980 - Hudait , et al. October 13, 2 | 2009-10-13 |
Hetero-bimos injection process for non-volatile flash memory
Grant 7,598,560 - Kavalieros , et al. October 6, 2 | 2009-10-06 |
Tensile strained NMOS transistor using group III-N source/drain regions
Grant 7,592,213 - Datta , et al. September 22, 2 | 2009-09-22 |
Semiconductor Device Structures And Methods Of Forming Semiconductor Structures
App 20090218603 - Brask; Justin K. ; et al. | 2009-09-03 |
Removing a high-k gate dielectric
Grant 7,575,991 - Doczy , et al. August 18, 2 | 2009-08-18 |
Transistor having tensile strained channel and system including same
Grant 7,569,869 - Jin , et al. August 4, 2 | 2009-08-04 |
Dual crystal orientation circuit devices on the same substrate
Grant 7,569,857 - Simon, legal representative , et al. August 4, 2 | 2009-08-04 |
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
Grant 7,569,443 - Kavalieros , et al. August 4, 2 | 2009-08-04 |
Buffer architecture formed on a semiconductor wafer
Grant 7,566,898 - Hudait , et al. July 28, 2 | 2009-07-28 |
Metal Gate Device With Reduced Oxidation Of A High-k Gate Dielectric
App 20090179282 - Doyle; Brian S. ; et al. | 2009-07-16 |
Tri-gate devices and methods of fabrication
Grant 7,560,756 - Chau , et al. July 14, 2 | 2009-07-14 |
Spacer patterned augmentation of tri-gate transistor gate length
App 20090168498 - Pillarisetty; Ravi ; et al. | 2009-07-02 |
Unity beta ratio tri-gate transistor static radom access memory (SRAM)
App 20090166680 - Pillarisetty; Ravi ; et al. | 2009-07-02 |
Reducing Ambipolar Conduction in Carbon Nanotube Transistors
App 20090159872 - Datta; Suman ; et al. | 2009-06-25 |
Methods for patterning a semiconductor film
Grant 7,547,637 - Brask , et al. June 16, 2 | 2009-06-16 |
Field Effect Transistor With Narrow Bandgap Source And Drain Regions And Method Of Fabrication
App 20090142897 - Chau; Robert S. ; et al. | 2009-06-04 |
Reducing Contact Resistance In P-type Field Effect Transistors
App 20090140301 - Hudait; Mantu K. ; et al. | 2009-06-04 |
Independent N-tips For Multi-gate Transistors
App 20090140341 - Pillarisetty; Ravi ; et al. | 2009-06-04 |
Gate Electrode Having A Capping Layer
App 20090121297 - Dewey; Gilbert ; et al. | 2009-05-14 |
Non-planar MOS structure with a strained channel region
Grant 7,531,393 - Doyle , et al. May 12, 2 | 2009-05-12 |
Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
Grant 7,531,404 - Pae , et al. May 12, 2 | 2009-05-12 |
Gate electrode having a capping layer
Grant 7,524,727 - Dewey , et al. April 28, 2 | 2009-04-28 |
Multigate device with recessed strain regions
Grant 7,525,160 - Kavalieros , et al. April 28, 2 | 2009-04-28 |
Dielectric Interface For Group Iii-v Semiconductor Device
App 20090095984 - Brask; Justin K. ; et al. | 2009-04-16 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
Grant 7,518,196 - Chau , et al. April 14, 2 | 2009-04-14 |
Process For Integrating Planar And Non-planar Cmos Transistors On A Bulk Substrate And Article Made Thereby
App 20090090976 - Kavalieros; Jack T. ; et al. | 2009-04-09 |
Tri-gate devices and methods of fabrication
Grant 7,514,346 - Chau , et al. April 7, 2 | 2009-04-07 |
Floating-body dynamic random access memory and method of fabrication in tri-gate technology
Grant 7,514,746 - Tang , et al. April 7, 2 | 2009-04-07 |
Method To Introduce Uniaxial Strain In Multigate Nanoscale Transistors By Self Aligned Si To Sige Conversion Processes And Structures Formed Thereby
App 20090085062 - Jin; Been-Yih ; et al. | 2009-04-02 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress
App 20090075445 - Kavalieros; Jack ; et al. | 2009-03-19 |
Tri-gate devices and methods of fabrication
Grant 7,504,678 - Chau , et al. March 17, 2 | 2009-03-17 |
Metal gate device with reduced oxidation of a high-k gate dielectric
Grant 7,501,336 - Doyle , et al. March 10, 2 | 2009-03-10 |
High Hole Mobility P-Channel Ge Transistor Structure on Si Substrate
App 20090057648 - Hudait; Mantu K. ; et al. | 2009-03-05 |
Nonplanar Semiconductor Device With Partially Or Fully Wrapped Around Gate Electrode And Methods Of Fabrication
App 20090061572 - Hareland; Scott A. ; et al. | 2009-03-05 |
Methods for uniform doping of non-planar transistor structures
Grant 7,494,862 - Doyle , et al. February 24, 2 | 2009-02-24 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode
App 20090039446 - Metz; Matthew V. ; et al. | 2009-02-12 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
App 20090042405 - Doczy; Mark L. ; et al. | 2009-02-12 |
Dielectric interface for group III-V semiconductor device
Grant 7,485,503 - Brask , et al. February 3, 2 | 2009-02-03 |
Forming dual metal complementary metal oxide semiconductor integrated circuits
App 20090020825 - Doczy; Mark ; et al. | 2009-01-22 |
Method For Making A Semiconductor Device Having A High-k Gate Dielectric
App 20090020836 - Doczy; Mark L. ; et al. | 2009-01-22 |
Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
Grant 7,479,421 - Kavalieros , et al. January 20, 2 | 2009-01-20 |
High hole mobility semiconductor device
App 20090001350 - Hudait; Mantu K. ; et al. | 2009-01-01 |
Semiconductor device with reduced fringe capacitance
App 20090001474 - Datta; Suman ; et al. | 2009-01-01 |
Isolation of MIM FIN DRAM capacitor
App 20090001438 - Doyle; Brian S. ; et al. | 2009-01-01 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress
Grant 7,470,972 - Kavalieros , et al. December 30, 2 | 2008-12-30 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
App 20080318385 - Kavalieros; Jack T. ; et al. | 2008-12-25 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
Grant 7,465,976 - Kavalieros , et al. December 16, 2 | 2008-12-16 |
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
Grant 7,456,476 - Hareland , et al. November 25, 2 | 2008-11-25 |
Forming ultra-shallow junctions
Grant 7,456,068 - Kavalieros , et al. November 25, 2 | 2008-11-25 |
Method of ion implanting for tri-gate devices
Grant 7,449,373 - Doyle , et al. November 11, 2 | 2008-11-11 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode
Grant 7,449,756 - Metz , et al. November 11, 2 | 2008-11-11 |
Method and apparatus for improving stability of a 6T CMOS SRAM cell
Grant 7,445,980 - Datta , et al. November 4, 2 | 2008-11-04 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 7,442,983 - Doczy , et al. October 28, 2 | 2008-10-28 |
Block Contact Architectures for Nanoscale Channel Transistors
App 20080258207 - Radosavljevic; Marko ; et al. | 2008-10-23 |
Forming dual metal complementary metal oxide semiconductor integrated circuits
Grant 7,439,113 - Doczy , et al. October 21, 2 | 2008-10-21 |
Multi-gate structure and method of doping same
App 20080237719 - Doyle; Brian S. ; et al. | 2008-10-02 |
Capacitor, method of increasing a capacitance area of same, and system containing same
App 20080237675 - Doyle; Brian S. ; et al. | 2008-10-02 |
Transistor having tensile strained channel and system including same
App 20080237636 - Jin; Been-Yih ; et al. | 2008-10-02 |
Increasing the surface area of a memory cell capacitor
App 20080237796 - Doyle; Brian S. ; et al. | 2008-10-02 |
Mechanism for forming a remote delta doping layer of a quantum well structure
App 20080237573 - Jin; Been-Yih ; et al. | 2008-10-02 |
On-chip memory cell and method of manufacturing same
App 20080237678 - Datta; Suman ; et al. | 2008-10-02 |
Hetero-Bimos injection process for non-volatile flash memory
App 20080237735 - Kavalieros; Jack T. ; et al. | 2008-10-02 |
Sb-based CMOS devices
Grant 7,429,747 - Hudait , et al. September 30, 2 | 2008-09-30 |
Carbon nanotube energy well (CNEW) field effect transistor
Grant 7,427,541 - Datta , et al. September 23, 2 | 2008-09-23 |
Tri-gate devices and methods of fabrication
Grant 7,427,794 - Chau , et al. September 23, 2 | 2008-09-23 |
Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors
Grant 7,425,500 - Metz , et al. September 16, 2 | 2008-09-16 |
Reducing reactions between polysilicon gate electrodes and high dielectric constant gate dielectrics
Grant 7,425,490 - Kavalieros , et al. September 16, 2 | 2008-09-16 |
Buffer architecture formed on a semiconductor wafer
App 20080210927 - Hudait; Mantu K. ; et al. | 2008-09-04 |
Reducing oxidation under a high K gate dielectric
App 20080211033 - Turkot; Robert B. ; et al. | 2008-09-04 |
Forming arsenide-based complementary logic on a single substrate
App 20080203381 - Hudait; Mantu K. ; et al. | 2008-08-28 |
Lateral undercut of metal gate in SOI device
App 20080188041 - Datta; Suman ; et al. | 2008-08-07 |
Stacked multi-gate transistor design and method of fabrication
Grant 7,407,847 - Doyle , et al. August 5, 2 | 2008-08-05 |
Lateral undercut of metal gate in SOI device
Grant 7,402,875 - Datta , et al. July 22, 2 | 2008-07-22 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
App 20080169512 - Doyle; Brian S. ; et al. | 2008-07-17 |
Method of combining floating body cell and logic transistors
App 20080157162 - Doyle; Brian S. ; et al. | 2008-07-03 |
SRAM and logic transistors with variable height multi-gate transistor architecture
App 20080157225 - Datta; Suman ; et al. | 2008-07-03 |
Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
App 20080157058 - Hudait; Mantu K. ; et al. | 2008-07-03 |
Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
App 20080151603 - Radosavljevic; Marko ; et al. | 2008-06-26 |
Forming field effect transistors from conductors
Grant 7,390,947 - Majumdar , et al. June 24, 2 | 2008-06-24 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
Grant 7,390,709 - Doczy , et al. June 24, 2 | 2008-06-24 |
Strain-inducing semiconductor regions
App 20080142785 - Datta; Suman ; et al. | 2008-06-19 |
Insulated Gate For Group Iii-v Devices
App 20080142786 - Datta; Suman ; et al. | 2008-06-19 |
Reducing oxidation under a high K gate dielectric
Grant 7,387,927 - Turkot, Jr. , et al. June 17, 2 | 2008-06-17 |
Method For Making A Semiconductor Device Having A High-k Dielectric Layer And A Metal Gate Electrode
App 20080135952 - Brask; Justin K. ; et al. | 2008-06-12 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 7,384,880 - Brask , et al. June 10, 2 | 2008-06-10 |
Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode
Grant 7,381,608 - Brask , et al. June 3, 2 | 2008-06-03 |
Cmos Device With Metal And Silicide Gate Electrodes And A Method For Making It
App 20080124857 - Brask; Justin K. ; et al. | 2008-05-29 |
Sb-based Cmos Devices
App 20080116485 - Hudait; Mantu K. ; et al. | 2008-05-22 |
Forming high-K dielectric layers on smooth substrates
App 20080087985 - Brask; Justin K. ; et al. | 2008-04-17 |
Tri-gate devices and methods of fabrication
Grant 7,358,121 - Chau , et al. April 15, 2 | 2008-04-15 |
Methods for uniform doping of non-planar transistor structures
App 20080085580 - Doyle; Brian ; et al. | 2008-04-10 |
Pinning layer for low resistivity N-type source drain ohmic contacts
Grant 7,355,254 - Datta , et al. April 8, 2 | 2008-04-08 |
Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode
Grant 7,355,281 - Brask , et al. April 8, 2 | 2008-04-08 |
Dual crystal orientation circuit devices on the same substrate
App 20080079003 - Shaheen; Mohamad A. ; et al. | 2008-04-03 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
Grant 7,348,284 - Doyle , et al. March 25, 2 | 2008-03-25 |
Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
Grant 7,342,277 - Radosavljevic , et al. March 11, 2 | 2008-03-11 |
Forming high-k dielectric layers on smooth substrates
Grant 7,323,423 - Brask , et al. January 29, 2 | 2008-01-29 |
Pinning Layer For Low Resistivity N-type Source Drain Ohmic Contacts
App 20080017891 - Datta; Suman ; et al. | 2008-01-24 |
Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrode
Grant 7,317,231 - Metz , et al. January 8, 2 | 2008-01-08 |
Gate dielectric materials for group III-V enhancement mode transistors
App 20080003752 - Metz; Matthew V. ; et al. | 2008-01-03 |
Forming ultra-shallow junctions
App 20070287259 - Kavalieros; Jack T. ; et al. | 2007-12-13 |
Tri-gate Transistors And Methods To Fabricate Same
App 20070262389 - Chau; Robert ; et al. | 2007-11-15 |
Sealing Spacer To Reduce Or Eliminate Lateral Oxidation Of A High-k Gate Dielectric
App 20070262399 - Dewey; Gilbert ; et al. | 2007-11-15 |
Thin Transition Layer Between A Group Iii-v Substrate And A High-k Gate Dielectric Layer
App 20070264837 - Rachmady; Willy ; et al. | 2007-11-15 |
Substrate band gap engineered multi-gate pMOS devices
App 20070235763 - Doyle; Brian S. ; et al. | 2007-10-11 |
Depositing polar materials on non-polar semiconductor substrates
App 20070238281 - Hudait; Mantu K. ; et al. | 2007-10-11 |
Method of ion implanting for tri-gate devices
App 20070238273 - Doyle; Brian S. ; et al. | 2007-10-11 |
Block contact architectures for nanoscale channel transistors
Grant 7,279,375 - Radosavljevic , et al. October 9, 2 | 2007-10-09 |
Stacked multi-gate transistor design and method of fabrication
App 20070231997 - Doyle; Brian S. ; et al. | 2007-10-04 |
Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors
App 20070231984 - Metz; Matthew V. ; et al. | 2007-10-04 |
In situ processing for ultra-thin gate oxide scaling
App 20070232078 - Metz; Matthew V. ; et al. | 2007-10-04 |
Tri-gate transistors and methods to fabricate same
Grant 7,268,058 - Chau , et al. September 11, 2 | 2007-09-11 |
Transistor gate electrode having conductor material layer
App 20070170464 - Murthy; Anand ; et al. | 2007-07-26 |
Nonplanar device with stress incorporation layer and method of fabrication
Grant 7,241,653 - Hareland , et al. July 10, 2 | 2007-07-10 |
Gate electrode having a capping layer
App 20070152271 - Dewey; Gilbert ; et al. | 2007-07-05 |
Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
App 20070152266 - Doyle; Brian S. ; et al. | 2007-07-05 |
Tensile strained NMOS transistor using group III-N source/drain regions
App 20070155063 - Datta; Suman ; et al. | 2007-07-05 |
Quantum dot nonvolatile transistor
App 20070145468 - Majumdar; Amlan ; et al. | 2007-06-28 |
Multigate device with recessed strain regions
App 20070145487 - Kavalieros; Jack T. ; et al. | 2007-06-28 |
Dual halo implant for improving short channel effect in three-dimensional tri-gate transistors
App 20070148926 - Datta; Suman ; et al. | 2007-06-28 |
Semiconductor channel on insulator structure
Grant 7,235,809 - Jin , et al. June 26, 2 | 2007-06-26 |
Carbon nanotube energy well (CNEW) field effect transistor
App 20070141790 - Datta; Suman ; et al. | 2007-06-21 |
Extreme high mobility CMOS logic
App 20070138565 - Datta; Suman ; et al. | 2007-06-21 |
Apparatus and method of fabricating a MOSFET transistor having a self-aligned implant
App 20070128820 - Majumdar; Amlan ; et al. | 2007-06-07 |
Dielectric interface for group III-V semiconductor device
App 20070123003 - Brask; Justin K. ; et al. | 2007-05-31 |
Transistor gate electrode having conductor material layer
Grant 7,223,679 - Murthy , et al. May 29, 2 | 2007-05-29 |
Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
App 20070114593 - Radosavljevic; Marko ; et al. | 2007-05-24 |
Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer
Grant 7,220,635 - Brask , et al. May 22, 2 | 2007-05-22 |
CMOS Devices with a single work function gate electrode and method of fabrication
App 20070111419 - Doyle; Brian S. ; et al. | 2007-05-17 |
CMOS devices with a single work function gate electrode and method of fabrication
App 20070090416 - Doyle; Brian S. ; et al. | 2007-04-26 |
Narrow-body multiple-gate FET with dominant body transistor for high performance
App 20070090408 - Majumdar; Amlan ; et al. | 2007-04-26 |
Method of fabricating CMOS devices having a single work function gate electrode by band gap engineering and article made thereby
App 20070069302 - Jin; Been-Yih ; et al. | 2007-03-29 |
Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
App 20070069293 - Kavalieros; Jack T. ; et al. | 2007-03-29 |
Multiple crystal orientations on the same substrate
App 20070063306 - Doyle; Brian S. ; et al. | 2007-03-22 |
Non-planar MOS structure with a strained channel region
Grant 7,193,279 - Doyle , et al. March 20, 2 | 2007-03-20 |
Depositing an oxide
Grant 7,192,890 - Zhou , et al. March 20, 2 | 2007-03-20 |
Forming dual metal complementary metal oxide semiconductor integrated circuits
Grant 7,192,856 - Doczy , et al. March 20, 2 | 2007-03-20 |
Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
App 20070045753 - Pae; Sangwoo ; et al. | 2007-03-01 |
Lateral undercut of metal gate in SOI device
App 20070040223 - Datta; Suman ; et al. | 2007-02-22 |
Reducing gate dielectric material to form a metal gate electrode extension
App 20070040227 - Datta; Suman ; et al. | 2007-02-22 |
Planarizing a semiconductor structure to form replacement metal gates
App 20070037372 - Kavalieros; Jack ; et al. | 2007-02-15 |
Tri-gate devices and methods of fabrication
App 20070034972 - Chau; Robert S. ; et al. | 2007-02-15 |
Method for making a semiconductor device that includes a metal gate electrode
Grant 7,176,090 - Brask , et al. February 13, 2 | 2007-02-13 |
Reducing the dielectric constant of a portion of a gate dielectric
App 20070029627 - Datta; Suman ; et al. | 2007-02-08 |
Carbon nanotube energy well (CNEW) field effect transistor
Grant 7,170,120 - Datta , et al. January 30, 2 | 2007-01-30 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 7,160,779 - Doczy , et al. January 9, 2 | 2007-01-09 |
Block contact architectures for nanoscale channel transistors
App 20070001219 - Radosavljevic; Marko ; et al. | 2007-01-04 |
Semiconductor device structures and methods of forming semiconductor structures
App 20070001173 - Brask; Justin K. ; et al. | 2007-01-04 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
Grant 7,157,378 - Brask , et al. January 2, 2 | 2007-01-02 |
Strained field effect transistors
App 20060292776 - Jin; Been-Yih ; et al. | 2006-12-28 |
CMOS device with metal and silicide gate electrodes and a method for making it
Grant 7,153,734 - Brask , et al. December 26, 2 | 2006-12-26 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
Grant 7,153,784 - Brask , et al. December 26, 2 | 2006-12-26 |
Metal gate device with reduced oxidation of a high-k gate dielectric
App 20060284271 - Doyle; Brian S. ; et al. | 2006-12-21 |
Method for fabricating transistor with thinned channel
App 20060286755 - Brask; Justin K. ; et al. | 2006-12-21 |
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
App 20060286729 - Kavalieros; Jack ; et al. | 2006-12-21 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode
App 20060278941 - Metz; Matthew V. ; et al. | 2006-12-14 |
Method and apparatus for improving stability of a 6T CMOS SRAM cell
App 20060281236 - Datta; Suman ; et al. | 2006-12-14 |
Reducing the dielectric constant of a portion of a gate dielectric
Grant 7,148,099 - Datta , et al. December 12, 2 | 2006-12-12 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode
Grant 7,148,548 - Doczy , et al. December 12, 2 | 2006-12-12 |
Reducing gate dielectric material to form a metal gate electrode extension
Grant 7,144,783 - Datta , et al. December 5, 2 | 2006-12-05 |
Floating-body dynamic random access memory and method of fabrication in tri-gate technology
App 20060267093 - Tang; Stephen H. ; et al. | 2006-11-30 |
Nonplanar device with stress incorporation layer and method of fabrication
App 20060261411 - Hareland; Scott A. ; et al. | 2006-11-23 |
Semiconductor channel on insulator structure
Grant 7,138,316 - Jin , et al. November 21, 2 | 2006-11-21 |
Planarizing a semiconductor structure to form replacement metal gates
Grant 7,138,323 - Kavalieros , et al. November 21, 2 | 2006-11-21 |
Method and apparatus for improving stability of a 6T CMOS SRAM cell
Grant 7,138,305 - Datta , et al. November 21, 2 | 2006-11-21 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
App 20060258072 - Kavalieros; Jack T. ; et al. | 2006-11-16 |
Compensating for induced strain in the channels of metal gate transistors
App 20060237801 - Kavalieros; Jack ; et al. | 2006-10-26 |
Multilayer metal gate electrode
Grant 7,126,199 - Doczy , et al. October 24, 2 | 2006-10-24 |
Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer
Grant 7,125,762 - Brask , et al. October 24, 2 | 2006-10-24 |
Tri-gate devices and methods of fabrication
App 20060228840 - Chau; Robert S. ; et al. | 2006-10-12 |
Carbon nanotube - metal contact with low contact resistance
App 20060223243 - Radosavljevic; Marko ; et al. | 2006-10-05 |
Carbon Nanotube Energy Well (cnew) Field Effect Transistor
App 20060220074 - Datta; Suman ; et al. | 2006-10-05 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode
App 20060220090 - Metz; Matthew V. ; et al. | 2006-10-05 |
Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
App 20060214237 - Metz; Matthew V. ; et al. | 2006-09-28 |
Field effect transistor with metal source/drain regions
App 20060202266 - Radosavljevic; Marko ; et al. | 2006-09-14 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress
App 20060205167 - Kavalieros; Jack ; et al. | 2006-09-14 |
Floating-body dynamic random access memory and method of fabrication in tri-gate technology
Grant 7,098,507 - Tang , et al. August 29, 2 | 2006-08-29 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
App 20060186484 - Chau; Robert S. ; et al. | 2006-08-24 |
Method for making a semiconductor device having a high-k gate dielectric
App 20060189156 - Doczy; Mark L. ; et al. | 2006-08-24 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
App 20060180878 - Brask; Justin K. ; et al. | 2006-08-17 |
Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer
App 20060183277 - Brask; Justin K. ; et al. | 2006-08-17 |
Metal gate carbon nanotube transistor
App 20060180859 - Radosavljevic; Marko ; et al. | 2006-08-17 |
Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
Grant 7,087,476 - Metz , et al. August 8, 2 | 2006-08-08 |
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
App 20060172497 - Hareland; Scott A. ; et al. | 2006-08-03 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 7,084,038 - Doczy , et al. August 1, 2 | 2006-08-01 |
Method for making a semiconductor device having a high-k gate dielectric
App 20060166447 - Doczy; Mark L. ; et al. | 2006-07-27 |
Forming field effect transistors from conductors
App 20060157747 - Majumdar; Amlan ; et al. | 2006-07-20 |
Inhibiting growth under high dielectric constant films
App 20060160371 - Metz; Matthew V. ; et al. | 2006-07-20 |
Forming dual metal complementary metal oxide semiconductor integrated circuits
App 20060160342 - Doczy; Mark ; et al. | 2006-07-20 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 7,074,680 - Doczy , et al. July 11, 2 | 2006-07-11 |
Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode
Grant 7,064,066 - Metz , et al. June 20, 2 | 2006-06-20 |
Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
Grant 7,060,568 - Metz , et al. June 13, 2 | 2006-06-13 |
Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a P/N junction
Grant 7,045,428 - Brask , et al. May 16, 2 | 2006-05-16 |
Tri-gate devices and methods of fabrication
Grant 7,005,366 - Chau , et al. February 28, 2 | 2006-02-28 |
Nonplanar device with stress incorporation layer and method of fabrication
Grant 6,974,738 - Hareland , et al. December 13, 2 | 2005-12-13 |
Method and apparatus for improving stability of a 6T CMOS SRAM cell
Grant 6,970,373 - Datta , et al. November 29, 2 | 2005-11-29 |
Tri-gate devices and methods of fabrication
Grant 6,914,295 - Chau , et al. July 5, 2 | 2005-07-05 |
Nonplanar device with stress incorporation layer and method of fabrication
Grant 6,909,151 - Hareland , et al. June 21, 2 | 2005-06-21 |
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