Power semiconductor device

Description

FIG. 1 is a perspective view of the front, left and bottom sides of a power semiconductor device showing our new design;

FIG. 2 is a perspective view of the front, right and top sides thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top view thereof;

FIG. 8 is a bottom view thereof;

FIG. 9 is an end view of cutting part at 9-9, with omitting the interior mechanism thereof; and,

FIG. 10 is an end view of cutting part at 10-10, with omitting the interior mechanism thereof.

The broken line showing of unclaimed portion of the power semiconductor device is for the purpose of illustrating environmental structure only and forms no part of the claimed design.

Claims

CLAIM The ornamental design for the power semiconductor device, as shown and described.

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Inventors:	Hayashida; Yukimasa (Tokyo, JP), Iura; Shinichi (Tokyo, JP), Uemura; Hitoshi (Tokyo, JP), Oya; Daisuke (Tokyo, JP), Hatori; Kenji (Tokyo, JP), Sakai; Yasuhiro (Tokyo, JP), Tsuda; Ryo (Tokyo, JP), Date; Ryutaro (Tokyo, JP)
Applicant:	Name City State Country Type MITSUBISHI ELECTRIC CORPORATION Tokyo N/A JP
Assignee:	Mitsubishi Electric Corporation (Tokyo, JP)
Appl. No.:	D/558,550
Filed:	March 18, 2016

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Foreign Application Priority Data

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Sep 30, 2015 [JP]			2015-021418

Current U.S. Class:	D13/182; D13/147
Current International Class:	1303
Field of Search:	;D13/133,146,147,154,155,182,184,199

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References Cited [Referenced By]

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U.S. Patent Documents

D357672	April 1995	Terasawa
D467869	December 2002	Ando
D469059	January 2003	Ando
D475012	May 2003	Ando
D476622	July 2003	Ando
D476959	July 2003	Yamada
D798832	October 2017	Hayashida

Primary Examiner: Bui; Daniel
Attorney, Agent or Firm: Studebaker & Brackett PC