U.S. patent number D827,590 [Application Number D/558,550] was granted by the patent office on 2018-09-04 for power semiconductor device.
This patent grant is currently assigned to Mitsubishi Electric Corporation. The grantee listed for this patent is MITSUBISHI ELECTRIC CORPORATION. Invention is credited to Ryutaro Date, Kenji Hatori, Yukimasa Hayashida, Shinichi Iura, Daisuke Oya, Yasuhiro Sakai, Ryo Tsuda, Hitoshi Uemura.
United States Patent |
D827,590 |
Hayashida , et al. |
September 4, 2018 |
Power semiconductor device
Claims
CLAIM The ornamental design for the power semiconductor device, as
shown and described.
Inventors: |
Hayashida; Yukimasa (Tokyo,
JP), Iura; Shinichi (Tokyo, JP), Uemura;
Hitoshi (Tokyo, JP), Oya; Daisuke (Tokyo,
JP), Hatori; Kenji (Tokyo, JP), Sakai;
Yasuhiro (Tokyo, JP), Tsuda; Ryo (Tokyo,
JP), Date; Ryutaro (Tokyo, JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
MITSUBISHI ELECTRIC CORPORATION |
Tokyo |
N/A |
JP |
|
|
Assignee: |
Mitsubishi Electric Corporation
(Tokyo, JP)
|
Appl.
No.: |
D/558,550 |
Filed: |
March 18, 2016 |
Foreign Application Priority Data
|
|
|
|
|
Sep 30, 2015 [JP] |
|
|
2015-021418 |
|
Current U.S.
Class: |
D13/182;
D13/147 |
Current International
Class: |
1303 |
Field of
Search: |
;D13/133,146,147,154,155,182,184,199 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Bui; Daniel
Attorney, Agent or Firm: Studebaker & Brackett PC
Description
FIG. 1 is a perspective view of the front, left and bottom sides of
a power semiconductor device showing our new design;
FIG. 2 is a perspective view of the front, right and top sides
thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a rear view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top view thereof;
FIG. 8 is a bottom view thereof;
FIG. 9 is an end view of cutting part at 9-9, with omitting the
interior mechanism thereof; and,
FIG. 10 is an end view of cutting part at 10-10, with omitting the
interior mechanism thereof.
The broken line showing of unclaimed portion of the power
semiconductor device is for the purpose of illustrating
environmental structure only and forms no part of the claimed
design.
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