Power semiconductor device
Matsumoto , et al. April 3, 2
U.S. patent number D814,431 [Application Number D/545,425] was granted by the patent office on 2018-04-03 for power semiconductor device. This patent grant is currently assigned to Mitsubishi Electric Corporation. The grantee listed for this patent is MITSUBISHI ELECTRIC CORPORATION. Invention is credited to Hiroyuki Masumoto, Manabu Matsumoto, Yoshitaka Otsubo.
| United States Patent | D814,431 |
| Matsumoto , et al. | April 3, 2018 |
Power semiconductor device
Claims
CLAIM The ornamental design for a power semiconductor device, as shown and described.
| Inventors: | Matsumoto; Manabu (Tokyo, JP), Otsubo; Yoshitaka (Tokyo, JP), Masumoto; Hiroyuki (Tokyo, JP) | ||||||||||
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| Applicant: |
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| Assignee: | Mitsubishi Electric Corporation
(Tokyo, JP) |
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| Appl. No.: | D/545,425 | ||||||||||
| Filed: | November 12, 2015 |
Foreign Application Priority Data
| May 15, 2015 [JP] | 2015-010577 | |||
| Current U.S. Class: | D13/182 |
| Current International Class: | 1303 |
| Field of Search: | ;D13/182,103,110,118,123,124,133,145-147,149,152,154,173,175,184,199 |
References Cited [Referenced By]
U.S. Patent Documents
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| D705184 | May 2014 | Takahashi |
| D762185 | July 2016 | Muehlensiep |
| 9418975 | August 2016 | Yoneyama |
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| 9627284 | April 2017 | Tsukamoto |
| 9660356 | May 2017 | Nakamura |
| D790491 | June 2017 | Hayashida |
| D798249 | September 2017 | Vinciarelli |
| D799439 | October 2017 | Hayashiguchi |
| 2004/0227231 | November 2004 | Maly |
| 2008/0142948 | June 2008 | Matsumoto |
| 2016/0190915 | June 2016 | Horiuchi |
| 2016/0276234 | September 2016 | Sugiyama |
| 2016/0284618 | September 2016 | Tsukamoto |
| 2016/0336245 | November 2016 | Egusa |
Other References
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Marsh Electronics Inc, Power semiconductors, no date, [online], [site visited May 25, 2017]. Available from Internet, <URL: https://www.marshelectronics.com/semiconductors.php>. cited by examiner. |
Primary Examiner: Johannes; Thomas
Assistant Examiner: Gingrich; Shawn T
Attorney, Agent or Firm: Studebaker & Brackett PC
Description
FIG. 1 is a front, top and right side perspective view of a power semiconductor device, showing our new design;
FIG. 2 is a rear, bottom and left side perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a rear view thereof;
FIG. 5 is a top view thereof;
FIG. 6 is a bottom view thereof;
FIG. 7 is a left side view thereof; and,
FIG. 8 is right side view thereof.
The broken line portion of the figure drawings is included to show portions of the article that form no part of the claimed design.
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References
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