Light emitting diode chip

Description

FIG. 1 is a perspective view of a light emitting diode chip showing our new design;

FIG. 2 is a front view thereof;

FIG. 3 is a rear view thereof;

FIG. 4 is a left side view thereof;

FIG. 5 is a right side view thereof;

FIG. 6 is a top view thereof; and,

FIG. 7 is a bottom view thereof.

A boundary between two transparent layers of the light emitting diode chip in FIGS. 1-5, shown in broken line represent unclaimed portions of the design and form no part thereof.

Claims

CLAIM The ornamental design for a light emitting diode chip, as shown and described.

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Inventors:	Huang; Jing-En (Tainan, TW), Huang; Kuan-Chieh (Tainan, TW), Ting; Shao-Ying (Tainan, TW), Huang; Yi-Ru (Tainan, TW)
Applicant:	Name City State Country Type Genesis Photonics Inc. Tainan N/A TW
Assignee:	Genesis Photonics Inc. (Tainan, TW)
Appl. No.:	D/495,848
Filed:	July 4, 2014

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Foreign Application Priority Data

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Jun 6, 2014 [TW]			103303417

Current U.S. Class:	D13/180
Current International Class:	1303
Field of Search:	;D13/180 ;D26/1 ;257/79,80,81,88,89,95,98,99,100,E33.058 ;313/483,498,500 ;362/555,800

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References Cited [Referenced By]

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U.S. Patent Documents

7049639	May 2006	Wang et al.
D576571	September 2008	Itai
7491977	February 2009	Fukasawa
D624886	October 2010	Ni et al.
D626097	October 2010	Takeuchi et al.
D629767	December 2010	Shimizu et al.
D653628	February 2012	Miyashita
D653629	February 2012	Miyashita
D676003	February 2013	Takeda et al.
2002/0123163	September 2002	Fujii
2010/0059782	March 2010	Fujitomo et al.
2012/0132933	May 2012	Watari et al.

Primary Examiner: Sikder; Selina
Attorney, Agent or Firm: Jianq Chyun IP Office