U.S. patent application number 10/019508 was filed with the patent office on 2002-09-05 for edge-emitting light-emitting semiconductor device and method of manufacture thereof.
Invention is credited to Fujii, Takehiro.
Application Number | 20020123163 10/019508 |
Document ID | / |
Family ID | 27343176 |
Filed Date | 2002-09-05 |
United States Patent
Application |
20020123163 |
Kind Code |
A1 |
Fujii, Takehiro |
September 5, 2002 |
Edge-emitting light-emitting semiconductor device and method of
manufacture thereof
Abstract
A side-emission type semiconductor light-emitting device 10
includes a substrate 12, and the substrate 12 is provided with a
case 14 formed of a resin having opacity and reflectivity. The
substrate 12 is formed, on its surface, with electrodes 18a and 18b
onto which an LED chip 20 is bonded. A transparent or translucent
resin 16 is charged between the substrate 12 and the case 14
whereby the LED chip 20 is molded. A light-emitting surface of the
side-emission type semiconductor light-emitting device 10 includes
surfaces 16a, 16b and a surface opposite to the surface 16b which
are formed of the transparent or translucent resin 16. Furthermore,
the light-emitting surface is formed by a roughened surface. Due to
this, a light outputted from the LED chip and a light reflected
from the case 14 is scattered by the light-emitting surface.
Inventors: |
Fujii, Takehiro; (Kyoto,
JP) |
Correspondence
Address: |
HOFFMANN & BARON, LLP
6900 JERICHO TURNPIKE
SYOSSET
NY
11791
US
|
Family ID: |
27343176 |
Appl. No.: |
10/019508 |
Filed: |
April 11, 2002 |
PCT Filed: |
April 23, 2001 |
PCT NO: |
PCT/JP01/03488 |
Current U.S.
Class: |
438/26 ;
257/E33.072 |
Current CPC
Class: |
H01L 2924/01029
20130101; H01L 2224/48091 20130101; H01L 2224/45144 20130101; H01L
2924/12041 20130101; H01L 24/97 20130101; H01L 33/60 20130101; H01L
2924/00 20130101; H01L 2224/48091 20130101; H01L 2924/00014
20130101; H01L 33/486 20130101; H01L 2224/45144 20130101; H01L
33/58 20130101; H01L 33/62 20130101 |
Class at
Publication: |
438/26 |
International
Class: |
H01L 021/00 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 24, 2000 |
JP |
2000-122255 |
May 8, 2000 |
JP |
2000-134159 |
May 24, 2000 |
JP |
2000-152249 |
Claims
What is claimed is:
1. A side-emission type semiconductor light-emitting device,
comprising: a substrate formed with an electrode; an LED chip
bonded onto said electrode; and a transparent or translucent resin
with which said LED chip is molded, wherein said transparent or
translucent resin has a light-emitting surface formed by a
roughened surface being perpendicular to said substrate.
2. A side-emission type semiconductor light-emitting device
according to claim 1, wherein said light-emitting surface is formed
by dicing.
3. A manufacturing method of a side-emission type semiconductor
light-emitting device, comprising the following steps of: (a)
mounting two reflectors having openings opposed with each other on
a substrate mounted with an LED chip; (b) injecting a transparent
or translucent resin at an opposing portion of said openings; and
(c) dicing said transparent or translucent resin being hardened and
said substrate at said opposing portion.
4. A side-emission type semiconductor light-emitting device,
comprising: a substrate formed with an electrode; an LED chip
bonded onto said substrate; a transparent or translucent resin with
which said LED chip is molded; and a reflector which reflects a
light emitted from said LED chip, wherein said transparent or
translucent resin has a convex portion, and said reflector has a
concave portion to be fitted into said convex portion.
5. A side-emission type semiconductor light-emitting device
according to claim 4, wherein said concave portion is a throughole
having a diameter which becomes larger from one main surface to
other main surface of said reflector.
6. A side-emission type semiconductor light-emitting device
according to claim 5, wherein said one main surface is a surface
brought into contact with said transparent or translucent resin,
and said other main surface is a surface exposed to outside.
7. A side-emission type semiconductor light-emitting device
according to any one of claims 4 to 6, wherein said LED chip has a
bonding wire extending from a top surface, and said concave portion
is formed directly above said LED chip.
8. A manufacturing method of a side-emission type semiconductor
light-emitting device, comprising the following steps of: (a)
mounting a reflector formed with a concave portion on a substrate;
(b) removing an organic matter adhering to a surface, including an
inner surface of said concave portion, of said reflector; and (c)
injecting a transparent or translucent resin between said reflector
and said substrate up to said concave portion.
9. A manufacturing method of a side-emission type semiconductor
light-emitting device according to claim 8, wherein said reflector
is subjected to UV cleaning in the step (b).
10. A side-emission type semiconductor light-emitting device,
comprising: a substrate formed with an electrode; and an LED chip
which is bonded onto said electrode by a bonding paste, wherein
said LED chip has a transparent or translucent base and a
light-emitting layer formed thereon, and is mounted on a position
deviated from an application position of said bonding paste to a
light emitting surface side.
11. A side-emission type semiconductor light-emitting device
according to claim 10, wherein said electrode includes an
application area having a center deviated from a mounted position
of said LED chip to an opposite direction of said light-emitting
surface.
12. A side-emission type semiconductor light-emitting device
according to claim 11, wherein said electrode further includes an
auxiliary area formed closer to said light-emitting surface side
than said application area and a narrow connecting portion
connecting said application area and said auxiliary area.
13. A side-emission type semiconductor light-emitting device
according to claim 11 or 12, wherein a center of said application
area is deviated from a center of said substrate to said opposite
direction.
Description
TECHNICAL FIELD
[0001] The present invention relates to a side-emission type
semiconductor light-emitting device and a manufacturing method
thereof. More specifically, the present invention relates to a
side-emission type semiconductor light-emitting device in which an
LED chip is bonded onto an electrode on a substrate, and a
manufacturing method thereof.
PRIOR ART
[0002] An example of this kind of a conventional side-emission type
semiconductor light-emitting device and a manufacturing method
thereof is disclosed in a Japanese Patent Laying-open No.5-315651
[H01L 33/00] laid-open on Nov. 26, 1993. A side-emission type
semiconductor light-emitting device 1 manufactured in the disclosed
manufacturing method is shown in FIG. 17(A). According to FIG.
17(A), an LED chip 43 is bonded onto electrodes 42a and 42b formed
on a substrate 42. A transparent or translucent synthetic resin 44
is formed so as to cover the LED chip 43. As can be understood from
FIG. 17(B) of a cross-sectional view at a line XVIB-XVIB in FIG.
17(A), the transparent or translucent synthetic resin 44 has a
smooth upper surface and a bulge toward a light-emitting surface
45. Furthermore, a cover body 46 having a concave portion into
which the transparent or translucent synthetic resin 44 is fitted
is formed so as to cover the transparent or translucent synthetic
resin 44. The cover body 46 is formed of a resin having opacity and
reflectivity, and a light emitted from the LED chip 43 to the
direction different from the light-emitting surface 45 is reflected
by the cover body 46. Accordingly, the reflected light is also
outputted from the light-emitting surface 45, and a light-emitting
efficiency in the side surface direction is thus improved.
[0003] However, since in the above-described prior art a gold wire
(bonding wire) 43a for electrically connecting between the LED chip
43 and the electrode 42b is bonded in a vertical direction with
respect to the light-emitting surface 45, a length W in a width
direction of the semiconductor light-emitting device 1 is shorter
than a length D in a depth direction thereof. Furthermore, the
light-emitting surface 45 is formed on only a part of one side
surface of the semiconductor light-emitting device 1 and therefore
a light-emitting area becomes narrow. Due to this, when the
semiconductor light-emitting device 1 is utilized as a backlight
for a liquid crystal display (LCD) of electrical equipment such as
a mobile phone and etc., there is a need to prevent an occurrence
of a so-called dark portion by providing a relatively large number
of semiconductor light-emitting devices 1 on a light guide
plate.
[0004] For avoiding this, the applicant of the present invention
has proposed a chip-type light-emitting device 51 as shown in FIG.
18(A) in a previous patent application No. 11-124410, i.e. Japanese
Patent Laying-open No.2000-315825 laid-open on Nov. 14, 2000.
According to FIG. 18(A), a substrate 53 is formed with electrodes
53a and 53b, and an LED chip 55 is bonded onto the electrodes 53a
and 53b. In other words, as can be understood from FIG. 18(B) of a
cross-sectional view at a line XVIIB-XVIIB in FIG. 18(A), the LED
chip 55 is die-bonded onto the electrode 53a by a bonding paste
(hereinafter referred merely to as "DB paste") 61 and is
wire-bonded onto the electrode 53b by a bonding wire 55a. A
reflector (case) 57 formed of a resin having opacity and
reflectivity is provided on the substrate 53 so as to enclose the
LED chip 55, and an opening portion formed by the substrate 53 and
the case 57 is filled with a transparent or translucent resin
59.
[0005] As can be understood from FIG. 18(B), the bonding wire 55a
is bonded in approximately parallel to a width direction of the
chip-type semiconductor light-emitting device 51, whereby a
light-emitting surface is made larger. It is noted that in FIG.
18(A), surfaces 59a and 59b and a surface opposite to the surface
59b which are formed of the transparent or translucent resin 59
shall be the light-emitting surface. However, although the
chip-type semiconductor light-emitting device 51 can make the
light-emitting surface larger, a mirror finish of the surface 59a
makes it difficult to manufacture the light-emitting device.
[0006] More specifically, when manufacturing the chip-type
semiconductor light-emitting device 51, a successive substrate 61
successively formed with the substrates 53 and a successive case 63
successively formed with the cases 57 are utilized so as to
manufacture about a thousand of chip-type semiconductor
light-emitting devices at a time. First, the successive substrate
61 and the successive case 63 are adhered to each other, a cross
section is shown in FIG. 19(A). In FIGS. 19(A) to 19(c), although
the successive substrate 61 is shown so as to extend only in a
lateral direction, the successive substrate 61 also extends in a
direction perpendicular to the paper sheet. Meanwhile, members 63a
included in the successive case 63 are formed with predetermined
intervals in a lateral direction, and a cross section of the member
63a is formed in a T-character form. Furthermore, the successive
case 63 extends in a direction perpendicular to the paper sheet
similarly to the successive substrate 61. In other words, the
member 63a is formed in a stick form so that a cross section
thereof becomes a T-character form. It is noted that the members
63a are connected to each other at an end portion not shown, and
the successive case 63 is thus formed.
[0007] After the successive substrate 61 and the successive case 63
are adhered to each other, a metal mold 71 is attached thereto as
shown in FIG. 19(B), and the transparent or translucent resin 59
is, in turn, injected as shown in FIG. 19(C). When the transparent
or translucent resin 59 is hardened, the metal mold 71 is detached,
and then, dicing is performed at a portion shown by a dotted line
in FIG. 19(C). Meanwhile, dicing is performed at every width of the
device in a direction parallel to the paper sheet. Thus, a
plurality of chip-type semiconductor light-emitting devices 51 can
be obtained. The surface 59a forming the light emitting surface is
subjected to a mirror finish by a metal surface of a convex portion
71a of the metal mold 71.
[0008] However, since there is a need to fit the convex portion 71a
of the metal mold 71 into a space 73 of approximately 0.3 to 0.5 mm
between respective members 63a, it makes difficult to position the
metal mold 71. Furthermore, the convex portion 71a is so thin that
it is liable to be damaged. In addition, the metal mold 71 needs to
be removed after the transparent or translucent resin 59 is
hardened, and a friction makes it difficult to pull out the metal
mold 71. Since the surface 19a shown in FIG. 18(A) is subjected to
the mirror finish, the light outputted form the LED chip 55 is
refracted therefrom, and alight-emitting intensity in the side
surface direction is thus decreased.
[0009] Furthermore, as can be understood from FIGS. 18(A) and
18(B), because the case 57 has a small area to be brought into
contact with the substrate 53, and they are formed of different
materials, it causes a decrease in adhesion between the case 57 and
the transparent or translucent resin 59. Due to this, the case 57
can be separated by external shock with ease. In addition, since
the LED chip 55 is die-bonded onto the electrode 53a by the DB
paste 61, the lower part (base) of the LED chip 55 is covered by
the DB paste 61. Therefore, the light outputted from the base
portion of the LED chip 55 is blocked by the DB paste 61, and a
light-emitting efficiency is thus decreased.
SUMMARY OF THE INVENTION
[0010] Therefore, it is a primary object of the present invention
to provide a side-emission type semiconductor light-emitting device
capable of improving a light-emitting intensity, and a
manufacturing method thereof.
[0011] It is another object of the present invention to provide a
side-emission type semiconductor light-emitting device capable of
preventing a case from being separated, and a manufacturing method
thereof.
[0012] It is another object of the present invention to provide a
side-emission type semiconductor light-emitting device capable of
improving a light-emitting efficiency in a desired light-emitting
direction.
[0013] A side-emission type semiconductor light-emitting device
according to the present invention comprises: a substrate formed
with an electrode; an LED chip bonded onto the electrode; and a
transparent or translucent resin with which the LED chip is molded,
wherein the transparent or translucent resin has a light-emitting
surface formed by a roughened surface being perpendicular to the
substrate. Forming the light-emitting surface perpendicular to the
substrate by a roughened surface, a light outputted by the LED chip
is scattered by the light-emitting surface, whereby light-emitting
intensity is improved. It is preferable dicing is utilized to form
the light-emitting surface.
[0014] A manufacturing method of a side-emission type semiconductor
light-emitting device according to the present invention comprises
the following steps of: (a) mounting two reflectors having openings
opposed with each other on a substrate mounted with an LED chip;
(b) injecting a transparent or translucent resin at an opposing
portion of the openings; and (c) dicing the transparent or
translucent resin being hardened and the substrate at the opposing
portion. In the side-emission type semiconductor light-emitting
device manufactured, a dicing surface of the transparent or
translucent resin shall be a light-emitting surface. Dicing makes
the light-emitting surface a roughened surface, whereby a light
outputted from the LED chip is scattered from the light-emitting
surface. Due to this, the light-emitting intensity is improved.
[0015] A side-emission type semiconductor light-emitting device
according to the present invention comprises: a substrate formed
with an electrode; an LED chip bonded onto the substrate; a
transparent or translucent resin with which the LED chip is molded;
and a reflector which reflects a light emitted from the LED chip,
wherein the transparent or translucent resin has a convex portion,
and the reflector has a concave portion to be fitted into the
convex portion. By fitting the convex portion into the concave
portion, the transparent or translucent resin and the reflector are
integrated to each other, and the reflector is thus never separated
with ease.
[0016] If the concave portion is made as a throughole becoming
larger from one main surface to other main surface of the
reflector, even if an external force from the one main surface to
the other main surface is applied to the reflector, the reflector
is not easily fallen. Preferably, the one main surface is a surface
brought into contact with the transparent or translucent resin, and
the other main surface is a surface exposed to the outside. In a
case the LED chip has a bonding wire extending from an upper
surface of the chip, by forming the concave portion directly above
the LED chip, the bonding wire can be housed in the concave
portion, and therefore, it is possible to restrain the height of
the side-emission type semiconductor light-emitting device.
[0017] A manufacturing method of a side-emission type semiconductor
light-emitting device according to the present invention comprises
the following steps of: (a) mounting a reflector formed with a
concave portion on a substrate; (b) removing an organic matter
adhering on a surface, including an inner surface of the concave
portion, of the reflector; and (c) injecting a transparent or
translucent resin between the reflector and the substrate up to the
concave portion. By removing the organic matter, the transparent or
translucent resin is easily entered into the concave portion, and
adhesion between the reflector and the transparent or translucent
resin is thus increased. By integrating the reflector with the
transparent or translucent resin, it is possible to prevent the
detachment of the reflector. It is preferable that a UV cleaning is
utilized to remove the organic matter.
[0018] A side-emission type semiconductor light-emitting device
according to the present invention comprises: a substrate formed
with an electrode; and an LED chip bonded onto the electrode by a
bonding paste, wherein the LED chip has a transparent or
translucent base and a light-emitting layer formed thereon, and is
mounted at a position deviated from an application position of the
bonding paste to a light emitting surface side. A light outputted
from the light-emitting layer is outputted from the light-emitting
surface through the transparent or translucent base. Since the LED
chip is bonded onto the position deviated from the application
position of the bonding paste to the light-emitting surface side,
the base is not covered by the bonding paste, and a light-emitting
efficiency is thus improved.
[0019] It is preferable that the electrode includes an application
area having a center deviated from a mounted position of the LED
chip to an opposite direction of the light-emitting surface,
whereby it is possible to determine the application position of the
bonding paste with ease. More preferably, the electrode includes an
auxiliary area formed closer to the light-emitting surface side
than the application area and a narrow connecting portion
connecting the application area and the auxiliary area. By forming
the auxiliary area, the LED chip is securely bonded onto the
electrode. Furthermore, by connecting the application area and the
auxiliary area with the narrow connecting portion, the bonding
paste applied to the application area never enters the auxiliary
are with ease. If the center of the application area is deviated
from the center of the substrate to the opposite direction, the
mounted position of the LED chip can be made at the same position
as conventional position.
[0020] The above described objects and other objects, features,
aspects and advantages of the present invention will become more
apparent from the following detailed description of the present
invention when taken in conjunction with the accompanying
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] FIG. 1 is an illustrative view showing one embodiment of the
present invention;
[0022] FIG. 2(A) is a cross-sectional view of a light-emitting
device at a line IIA-IIA shown in FIG. 1;
[0023] FIG. 2(B) is a cross-sectional view of the light-emitting
device at a line IIB-IIB shown in FIG. 1;
[0024] FIG. 3(A) is an illustrative view showing a successive
substrate and successive case used for manufacturing the
light-emitting device shown in FIG. 1;
[0025] FIG. 3(B) is an illustrative view showing a laminated body
in which the successive case adheres to the successive
substrate;
[0026] FIG. 4(A) is an illustrative view showing a step to
manufacture the laminated body;
[0027] FIG. 4(B) is an illustrative view showing a step to apply a
metal mold to the laminated body;
[0028] FIG. 4(C) is an illustrative view showing a step to inject a
transparent or translucent resin into the laminated body applied
with the metal mold;
[0029] FIG. 4(D) is an illustrative view showing a step to make
dicing on the laminated body;
[0030] FIG. 5 is an illustrative view showing another embodiment of
the present invention;
[0031] FIG. 6(A) is a cross-sectional view of the light-emitting
device at a line VIA-VIA shown in FIG. 5;
[0032] FIG. 6(B) is a cross-sectional view of the light-emitting
device at a line VIB-VIB shown in FIG. 5.
[0033] FIG. 7(A) is an illustrative view showing a successive
substrate and a successive case used for manufacturing the
light-emitting device shown in FIG. 5;
[0034] FIG. 7(B) is an illustrative view showing a laminated body
in which the successive case adheres to the successive
substrate;
[0035] FIG. 8(A) is an illustrative view showing a step to
manufacture the laminated body;
[0036] FIG. 8(B) is an illustrative view showing a step to apply a
metal mold to the laminated body;
[0037] FIG. 8(C) is an illustrative view showing a step to inject a
transparent or translucent resin into the laminated body applied
with the metal mold;
[0038] FIG. 8(D) is an illustrative view showing a step to making
dicing on the laminated body;
[0039] FIG. 9 is a cross-sectional view showing a modified example
of the light-emitting device shown in FIG. 5;
[0040] FIG. 10 is an illustrative view showing another embodiment
of the present invention;
[0041] FIG. 11(A) is a cross-sectional view of the light-emitting
device at a line XA-XA shown in FIG. 10;
[0042] FIG. 11(B) is a cross-sectional view of the light-emitting
device at a line XB-XB shown in FIG. 10;
[0043] FIG. 12 is an illustrative view showing an LED chip shown in
FIG. 11;
[0044] FIG. 13(A) is an illustrative view when the LED chip and a
DB paste bonded onto an electrode are viewed from the upper
side;
[0045] FIG. 13(B) is an illustrative view when the LED chip and the
DB paste bonded onto the electrode are viewed from a light-emitting
surface (front side);
[0046] FIG. 13(C) is an illustrative view when the LED chip and the
DB paste bonded onto the electrode are viewed from the side
surface;
[0047] FIG. 13(D) is an illustrative view when the LED chip and the
DB paste bonded onto the electrode are viewed from an opposite side
(back surface) of the light-emitting surface;
[0048] FIG. 14(A) is an illustrative view showing one example of
the electrode formed on the substrate;
[0049] FIG. 14(B) is an illustrative view showing a state that the
LED chip is mounted on the electrode;
[0050] FIG. 15(A) is an illustrative view showing a successive
substrate and a successive case utilized in the light-emitting
device shown in FIG. 10;
[0051] FIG. 15(B) is an illustrative view showing a laminated body
in which the successive case adheres to the successive
substrate;
[0052] FIG. 16(A) is an illustrative view showing a step to
manufacture the laminated body;
[0053] FIG. 16(B) is an illustrative view showing a step to apply a
metal mold to the laminated body;
[0054] FIG. 16(C) is an illustrative view showing a step to inject
a transparent or translucent resin into the laminated body applied
with the metal mold;
[0055] FIG. 16(D) is an illustrative view showing a step to make
dicing on the laminated body;
[0056] FIG. 17(A) is an illustrative view showing one example of a
conventional side-emission type semiconductor light-emitting
device;
[0057] FIG. 17(B) is a cross-sectional view of the side-emission
type semiconductor light-emitting device at a line XVIB-XVIB shown
in FIG. 17(A);
[0058] FIG. 18(A) is an illustrative view showing one example of a
side-emission type semiconductor light-emitting device as a
background art of the present invention;
[0059] FIG. 18(B) is a cross-sectional view of the side-emission
type semiconductor light-emitting device at the line XVIIB-XVIIB
shown in FIG. 18(A);
[0060] FIG. 19(A) is an illustrative view showing a step to bond a
successive case to a successive substrate when manufacturing the
side-emission type semiconductor light-emitting device shown in
FIG. 18(A);
[0061] FIG. 19(B) is an illustrative view showing a step to apply a
metal mold to the successive case bonded to the successive
substrate; and
[0062] FIG. 19(C) is an illustrative view showing a step to inject
a transparent or translucent resin into the successive case applied
with the metal mold.
BEST FORM FOR PRACTICING THE INVENTION
[0063] Referring to FIG. 1, a side-emission type semiconductor
light-emitting device (hereinafter referred merely to as
"light-emitting device") 10 of this embodiment includes an
insulating substrate (hereinafter referred merely to as
"substrate") 12 formed of a glass epoxy or the like. On the
substrate 12, a reflector (case) 14 formed of a resin having
opacity and reflectivity is provided. The substrate 12 is provided
with electrodes 18a and 18b, and as can be understood from FIG.
2(A) of cross-sectional view at a line IIA-IIA in FIG. 1, a
semiconductor light-emitting element (LED chip) 20 is die-bonded
onto the electrode 18a by a DB paste (not shown). Meanwhile, as can
be understood from FIG. 2(B) of a cross-sectional view at a line
IIB-IIB in FIG. 1, the electrode 18b and the LED chip 20 are
electrically connected with each other by a bonding wire 22 such as
a gold wire and etc.
[0064] The electrode 18a is formed to extend from a front side to a
backside of the substrate 12 via a throughole 12a provided on a
side surface of the substrate, and is structured to be directly
mounted on the printed board (not shown) so as to be electrically
connected thereto. Although not illustrated, the electrode 18b is
structured in the same or similar manner. A space between the
substrate 12 and the case 14 is charged or filled with a
transparent or translucent resin 16 such as an epoxy resin or the
like with which the LED chip 20 is molded.
[0065] It is noted that although each of the electrodes 18a and 18b
is shown with a thickness in FIG. 1 and FIGS. 2(A) and 2(B), they
are actually formed in a thin-film form. Meanwhile, as shown in
FIG. 1, the throughole 12a is covered by the electrode 18a at the
front side of the substrate 12, whereby it is possible to prevent
the transparent or translucent resin 16 from flowing into the
backside of the substrate 12 during molding. Although not shown,
the electrode 18b is structured in the same or similar manner.
[0066] As can be understood from FIGS. 2(A) and 2(B), the bonding
wire 22 is bonded in a direction approximately parallel to a width
direction W of the light-emitting device 10. Meanwhile,
light-emitting surfaces are surfaces 16a, 16b and a surface
opposite to the surface 16b, and are formed of the transparent or
translucent resin 16. Furthermore, the light-emitting surfaces are
perpendicular to the substrate 12, and each of which is formed by a
roughened surface. Due to this, a light outputted from the LED chip
20 and a light reflected by the case 14 are scattered by the
light-emitting surfaces. In other words, a light-emitting area is
substantially enlarged, and a light-emitting intensity is
improved.
[0067] Referring to FIG. 3(A), a successive substrate 30 is a
substrate which is formed with a plurality of substrates 12
successively, and a successive case 32 is a case which is formed
with a plurality of cases 14 successively. These successive
substrate 30 and successive case 32 are utilized to manufacture the
light-emitting device 10. The successive substrate 30 is, although
not shown, formed with sets of the electrodes 18a and 18b in
correspondence to the number of light-emitting devices 10
(approximately one thousand as in this embodiment) to be
manufactured, and is bonded with the LED chips 20 in correspondence
to the number of light-emitting devices 10 to be manufactured.
[0068] The successive case 32 is laminated on the successive
substrate 30 as shown in FIG. 3(B), and a laminated body 34 can be
thus obtained. As can be understood from FIG. 4(A) of a cross
sectional view at a line IVA-IVA in FIG. 3(B), a cross section of a
member 32a included in the successive case 32 is formed in a
T-character form, and a plurality of members 32a are formed in a
lateral direction with predetermined intervals. Meanwhile, the
member 32a is formed to be successive in a direction perpendicular
to the paper sheet. That is, the member 32a is formed in a stick
form so that a cross section is a T-character form. It is noted
that as can be understood from FIG. 3(A), respective members 32a
are connected at their end portions, whereby a single successive
case 32 is formed. Furthermore, the successive case 32 is adhered
to the successive substrate 30 at a portion corresponding to a base
or bottom of a vertical line of T-character.
[0069] When the laminated body 34 is obtained, the successive case
32 is subjected to a UV cleaning. More specifically, an ultraviolet
ray is radiated for a predetermined time period (e.g. 3 minutes) in
a state that the successive case 32 is adhered to the successive
substrate 30. Such the UV cleaning can remove organic matter
adhered to a surface of the successive case 32 (case 14), and can
improve adhesion between the case 14 and the transparent or
translucent resin 16. In other words, a bonded state between the
organic matter and the case 14 is released, and it makes easy to
connect or combine the transparent or translucent resin 16 injected
and the case 14. After finishing the UV cleaning, the transparent
or translucent resin 16 is injected into a portion (opposed
portion) 38 that openings 40 each being formed by the successive
substrate 30 and the successive case 32 are opposite to each
other.
[0070] More specifically, a metal mold 36 formed in a flat plate
form as shown in FIG. 4(B) is applied or attached to a top surface
of the successive case 32, and the transparent or translucent resin
16 is injected into the opposed portion 38 as shown in FIG. 4(C).
After finishing the injection, the transparent or translucent resin
16 is hardened, and the metal mold 36 is, in turn, removed from the
successive case 32. The laminated body 34 being charged or filled
with the transparent or translucent resin 16 is subjected to dicing
by a dicing saw (not shown) at a position indicated by a dotted
line in FIG. 4(C). As can be understood from FIG. 4(D) of a
cross-sectional view at a line IVD-IVD of FIG. 3(B) which
illustrates a state the transparent or translucent resin 16 has
injected, the laminated body 34 is subjected to dicing every width
of the case 14 (light-emitting device 10), whereby the
light-emitting device 10 shown in FIG. 1 can be obtained in plural.
Since a light-emitting surface of the light-emitting device 10 is
formed by dicing, a light-emitting surface is formed with minute
concavity and convexity in correspondence to roughness of a blade
of the dicing saw. A light outputted from the LED chip 20 is
scattered from the light-emitting surface by the minute concavity
and the convexity.
[0071] According to this embodiment, since a light-emitting surface
improved in scattering of light is formed by dicing, it is possible
to improve a light-emitting intensity with ease. Accordingly, in a
case the light-emitting device is applied to a backlight of an LCD
provided on electrical equipment and etc., it is possible to
decrease the number of the light-emitting devices. In addition,
since the metal mold utilized in injecting the transparent or
translucent resin is in a flat plate form, it is easy to
manufacture a metal mold.
[0072] Referring to FIG. 5, since a light-emitting device 10 of
another embodiment is the same or similar to the device shown by
FIGS. 1 to 4 except for that a throughole (hereinafter referred
merely to as "hole") 24 is provided on an upper surface of the case
24, a duplicated description will be omitted here as much as
possible. As can be understood from FIG. 5 and FIGS. 6(A) and 6(B),
the case 14 is formed with the throughole 24 on its top plate 14a.
The hole 24 has a shape that a truncated corn is turned upside
down, and a diameter thereof becomes larger from a lower surface to
an upper surface of the top plate 14a. In addition, the hole 24 is
charged or filled with the transparent or translucent resin 16, and
the case 14 and the transparent or translucent resin 16 are thus
integrated to each other. In other words, the transparent or
translucent resin 16 and the case 14 are integrated with each other
in such a manner that a convex portion formed on the resin 16 is
fitted into a concave portion formed on the case 14 (i.e. hole 24),
whereby both of them are integrated to each other.
[0073] Such the light-emitting device 10 is manufactured in the
same or similar manner to the embodiments of FIGS. 1 to 4.
Specifically, as shown in FIG. 7(A), a successive case 32 formed
with a plurality of holes 24 is laminated on a successive substrate
30, whereby a laminated body 34 shown in FIG. 7(B) is formed. At
this time, as can be understood from FIG. 8(A) of a cross-sectional
view at a line VIIIA-VIIIA in FIG. 7(B), a top portion of a bonding
wire 22 is housed in the hole 24. When the laminated body 34 is
obtained after a UV cleaning for a predetermined time, a metal mold
36 is applied to the successive case 32 as shown in FIG. 8(B), and
then, a transparent or translucent resin 16 is injected into the
successive case 32 as shown in FIG. 8(C). When the resin 16 is
hardened, the laminated body 34 is subjected to dicing as shown in
FIG. 8(D), and a plurality of light-emitting devices 10 are thus
obtained.
[0074] According to this embodiment, by forming the hole 24 on the
case 14 and by injecting the transparent or translucent resin 16
into the hole 24, the case 14 and the transparent or translucent
resin 16 are integrally formed. Due to this, even if a force is
applied to the case 14 in the width direction W of the
light-emitting device 10 shown in FIG. 5, the convex portion 16c of
the transparent or translucent resin 16 functions as a stopper, and
detachment of the case 14 is thus prevented. Furthermore, since the
diameter of the hole 24 is made larger toward upper direction, even
if a force is applied in an upper direction H in FIG. 5, the case
14 is never separated.
[0075] In addition, although the diameter of the hole 24 is made
larger toward the upper surface of the top plate 14a so that it
makes difficult to enter the transparent or translucent resin 16
into the hole 24, because of the improvement in adhesion between
the transparent or translucent resin 16 and the case 14 by UV
cleaning, the transparent or translucent resin 16 is easily
intruded into the hole 24.
[0076] Furthermore, since the hole 24 is formed directly above the
LED chip 20, a top 22a of the boding wire 22 extending from the
upper surface of the chip is housed within the hole 24. Due to
this, even if the height of the case 14 is made lower, the bonding
wire 22 is never brought into contact with the case 14, and
therefore, it is possible to prevent disconnection of the bonding
wire 22 when attaching the case 14. In addition, since the
light-emitting device 10 can be formed in a thin type (thinner than
above-described light-guide plate), the light outputted from the
LED chip 20 is efficiently incident on the light-guide plate.
[0077] Furthermore, since a light outputted through the hole 24 to
outside enables lighting test of the light-emitting device 10, a
lighting test apparatus for an upper-emission type semiconductor
light-emitting device can be applied to the light-emitting device
10 of this embodiment. In other words, there is no need to provide
another test apparatus, and there is no need to change positions of
optical sensors provided on the test apparatus. In the lighting
test, an amount of the light-emission from the light-emitting
surface (side surfaces) may be evaluated by multiplying a ratio of
an area of the light-emitting surface and an area of the hole 24 by
an amount of the light-emission from the hole 24.
[0078] It is noted that in this embodiment the hole is formed in a
shape that a truncated corn is turned upside down, but such a hole
may formed in a shape that a truncated corn is put upside up, i.e.
in upward direction as shown in FIG. 9. In other words, a diameter
of the hole may be made smaller toward the upper direction. In a
case a hole has a form shown in FIG. 5 embodiment, when a large
force is applied in the upper direction H, a convex portion of a
transparent or translucent resin is broken, and therefore, there is
a fear disconnection of a wire might occur. In contrast, when a
hole is formed to become smaller toward the upper direction, even
if a case is separated by a large force in the upper direction, the
disconnection of a bonding wire can be avoided.
[0079] Furthermore, if it is required only the adhesion between the
case and the transparent or translucent resin is improved, the hole
may be formed in a cylindrical form. However, when detaching the
metal mold for forming the case, since friction of a portion
brought into contact with the hole becomes larger, it is difficult
to pull out the metal mold, and there is a fear that the successive
case might be damaged. Accordingly, in this embodiment, a hole of
tapered form that a diameter becomes larger toward the upper
direction is formed in order to solve these problems.
[0080] In addition, in this embodiment, although the UV cleaning is
made on the case (successive case), plasma cleaning and sputtering
cleaning may be used to remove the organic matter; however, in the
examination performed by the inventor, the UV cleaning made
adhesion best, and in addition, the plasma cleaning and the
sputtering cleaning have a problem that a vacuum system is needed,
and thus the cleaning appratus itself is expensive.
[0081] Furthermore, although a whole surface of the case
(successive case) including an inner surface is cleaned in this
embodiment, if at least the inner surface of the hole is cleaned,
it is possible to enter or intrude the transparent or translucent
resin into the hole.
[0082] Referring to FIG. 10, since a light-emitting device 10 of
another embodiment is the same or similar to that of FIGS. 1 to 4
except that an electrode 18a is formed as shown in FIG. 14(A), a
duplicate description will be omitted as much as possible. It is
noted since in this embodiment a relative position between a DB
paste and an LED chip has a special significance, and therefore, a
DB paste is particularly illustrated by giving a reference numeral
"26". The DB paste 26 is illustrated by utilizing slant lines in
FIG. 11(A), FIG. 11(B), FIG. 12, and FIGS. 13(A) to 13(D), but it
is noted that the slant lines never show a cross-section.
[0083] As shown in FIG. 12, the LED chip 20 includes a p-type
electrode (bonding pad) 20a to be connected to the bonding wire 22
and an n-type electrode 20e to be connected to the electrode 18a.
The n-type electrode 20e is formed by a thin film similarly to the
electrodes 18a and 18b. The LED chip 20 includes a p layer 20b, a
light-emitting layer 20c and an n layer 20d which are laminated on
the n-type electrode 20e in an order of the n layer 20d, the
light-emitting layer 20c and the p layer 20b. Each of the p layer
20b and the n layer 20d is formed of a translucent or transparent
semiconductor GaAs. Furthermore, the n-type electrode 20e is formed
of a copper thin film or the like having reflectivity. Due to this,
a light emitted from the light-emitting layer 20c is outputted to
an outside of the LED chip 20 through the p layer 20b and the n
layer 20d. Furthermore, a light emitted below the light-emitting
device 20c is reflected from a surface of the n-type electrode 20e
and outputted to the outside of the LED chip 20 via the n layer
20d.
[0084] Accordingly, in a case the LED chip 20 is die-bonded onto
the electrode 18a by the DB paste 26, a base 20f including the n
layer 20d and the n-type electrode 20e is covered with the DB paste
26, and the light outputted through the n layer 20d is thus blocked
by the DB paste 26. For avoiding this, in this embodiment by
die-bonding the LED chip 20 onto the position shown in FIGS. 13(A)
to 13(D), a light in a light-emitting direction P can be utilized
at maximum.
[0085] In other words, as shown in FIG. 13(A), the LED chip 20 is
die-bonded onto the electrode 18a in a state that it is deviated
from a center of the DB paste 26 to the downward direction
(light-emitting direction P). Accordingly, when viewing the LED
chip 20 from the side of the light-emitting surface 16a, a portion
covered by the DB paste 26 is decreased at the light-emitting
direction P side of the LED chip 20. Meanwhile, when viewing the
LED chip 20 from a side opposing to the surface 16b, as shown in
FIG. 13(C), an amount of the DB paste 26 is continuously decreased
from the center of the DB paste 26 toward the light-emitting
direction P. Furthermore, when viewing the LED chip 20 from a side
opposing to the surface 16a, as shown in FIG. 13(D), the base 20f
of the LED chip 20 is covered with the DB paste 26. This is because
the surface opposing to the light-emitting surface 16a is closer to
the center of the DB paste 26, and the DB paste 26 increases in
amount.
[0086] In this manner, since the LED chip 20 is mounted in a state
that it is deviated from the center of the DB paste 26 to the
light-emitting surface 16a side, the electrode 18a shown in FIG.
14(A) is formed. According to FIG. 14(A), the electrode 18a
includes an application area 28a to which the DB paste 26 is to be
applied and an auxiliary area 28b. The application area 28a is
circular in shape, and a center Y is deviated from a center X of
the substrate 12 toward the left (direction opposite to the
light-emitting direction P). Meanwhile, the auxiliary area 28b is
vertically-long rectangular in shape and formed at a right side
(light-emitting direction P) of the application area 28a.
Furthermore, the application area 28a and the auxiliary area 28b
are connected to each other with a narrow connecting portion
28c.
[0087] When the DB paste 26 is dropped on the center Y of the
application area 28a, the DB paste 26 spreads in approximately
circular. As shown in FIG. 14(B), the LED chip 20 is mounted on the
center X of the substrate 12. Due to this, a surface at a side of
the light-emitting surface 16a of the LED chip 20 is never covered
with the DB paste 26, and it is possible to prevent the light
outputted to the light-emitting direction P from being blocked by
the DB paste 26. Furthermore, by providing the auxiliary area 28b,
it is possible to reliably connect the LED chip 20 to the electrode
18a. It is noted that in FIGS. 14(A) and 14(B), illustration of the
DB paste 26 will be omitted to simply show the electrode 18.
[0088] A size of the application area 28a depends on an application
amount and viscosity of the DB paste 26, and as the size of the
application area 28a is determined, the position (center Y) of the
application area 28a is also determined. Since the application area
28a and the auxiliary area 28b are connected (jointed) by the
connecting portion 28c, it is possible to prevent the DB paste 26
from entering the auxiliary area 28b. That is, it is possible to
decrease the amount of the DB paste 26 at the side of the
light-emitting surface 16a.
[0089] Such the light-emitting device 10 is manufactured in the
same or similar manner to the embodiment of FIGS. 1 to 4. That is,
as shown in FIG. 15(A), the successive case 32 is laminated on the
successive substrate 30, and the laminated body 34 shown in FIGS.
15(B) and 16(A) is, in turn, formed. When the laminated body 34 is
formed, after UV cleaning for a predetermined time period, the
metal mold 36 is applied to the successive case 32 as shown in FIG.
16(B), and the transparent or translucent resin 16 is injected into
the successive case 32 as shown in FIG. 16(C). When the transparent
or translucent resin 16 is hardened, the laminated body 34 is
subjected to dicing at a portion shown by a dotted line in FIG.
16(D), and a plurality of light-emitting devices 10 are thus
obtained.
[0090] According to this embodiment, since the mounted position of
the LED chip 20 is deviated from the center Y of the DB paste 26 to
the light-emitting surface 16a side, the light-emitting side of the
LED chip 20 is never covered with the DB paste 26. In other words,
because a light outputted to a desired direction is never blocked
by the DB paste, it is possible to improve a light-emitting
efficiency.
[0091] It is noted that an electrode is not limited to the shape
shown in FIG. 14(A), and it is appropriate that a shape can
determine an application position of the DB paste uniquely.
Furthermore, if an electrode is formed as in FIG. 14(A) and an
application position of a DB paste is changed, it is possible to
manufacture the light-emitting device of this embodiment utilizing
a conventional manufacturing device.
[0092] Although the present invention has been described and
illustrated in detail, it is clearly understood that the same is by
way of illustration and example only and is not to be taken by way
of limitation, the spirit and scope of the present invention being
limited only by the terms of the appended claims.
* * * * *